TW201701028A - Display device - Google Patents
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- TW201701028A TW201701028A TW104119909A TW104119909A TW201701028A TW 201701028 A TW201701028 A TW 201701028A TW 104119909 A TW104119909 A TW 104119909A TW 104119909 A TW104119909 A TW 104119909A TW 201701028 A TW201701028 A TW 201701028A
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000962 poly(amidoamine) Polymers 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133615—Edge-illuminating devices, i.e. illuminating from the side
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
本發明係關於一種顯示面板，尤指一種同時可以在有環境光和低環境光情況下皆能使用的顯示裝置。The present invention relates to a display panel, and more particularly to a display device that can be used at the same time in both ambient light and low ambient light.
顯示裝置由於具有輕薄短小與節能等優點，已被廣泛地應用在各式電子產品，如智慧型手機(smart phone)、筆記型電腦(notebook computer)、平板電腦(tablet PC)、穿戴式裝置等，且隨著大尺寸顯示裝置技術的快速發展，液晶顯示器已逐漸成為平面電視的主流產品。然而，現行顯示裝置於環境光源較大時顯示效果不佳，使得顯示裝置的應用上受到了限制。Display devices have been widely used in various electronic products such as smart phones, notebook computers, tablet PCs, wearable devices, etc. due to their advantages of lightness, thinness, and energy saving. With the rapid development of large-scale display device technology, liquid crystal displays have gradually become mainstream products of flat-panel TVs. However, the current display device has a poor display effect when the ambient light source is large, which limits the application of the display device.
本發明之目的之一在於提供一種顯示裝置，以增加顯示裝置的應用範圍。One of the objects of the present invention is to provide a display device to increase the range of application of the display device.
本發明之一實施例提供一種顯示裝置，包括第一基板、共通電極、第二基板、複數個第一反射圖案、第二反射層、複數個透明電極、顯示介質層以及發光元件。第一基板具有內表面。共通電極設置於第一基板之內表面上。第二基板與第一基板相對設置，且第二基板具有內表面、外表面以及側端面。第二基板具有複數個畫素區，且各畫素區具有反射區和穿透區。第一反射圖案設置於第二基板之內表面上並分別位於反射區內。第二反射層設置於第二基板上並至少位於穿透區內。透明電極設置於第二基板之內表面上並至少分別位於穿透區內。顯示介質層位於第一基板與第二基板之間。發光元件面對第二基板之側端面。An embodiment of the present invention provides a display device including a first substrate, a common electrode, a second substrate, a plurality of first reflective patterns, a second reflective layer, a plurality of transparent electrodes, a display medium layer, and a light emitting element. The first substrate has an inner surface. The common electrode is disposed on an inner surface of the first substrate. The second substrate is disposed opposite to the first substrate, and the second substrate has an inner surface, an outer surface, and a side end surface. The second substrate has a plurality of pixel regions, and each of the pixel regions has a reflective region and a transmissive region. The first reflective patterns are disposed on the inner surface of the second substrate and are respectively located in the reflective regions. The second reflective layer is disposed on the second substrate and at least in the penetration region. The transparent electrodes are disposed on the inner surface of the second substrate and at least respectively located in the penetration regions. The display medium layer is located between the first substrate and the second substrate. The light emitting element faces a side end surface of the second substrate.
為使熟習本發明所屬技術領域之一般技藝者能更進一步了解本發明，下文特列舉本發明之較佳實施例，並配合所附圖式，詳細說明本發明的構成內容及所欲達成之功效。The present invention will be further understood by those of ordinary skill in the art to which the present invention pertains. .
請參考第1圖與第2圖。第1圖繪示本發明之第一實施例之顯示裝置的上視示意圖，第2圖繪示本發明之第一實施例之顯示裝置之剖面示意圖，其中為突顯本發明之顯示裝置之特色，部分元件未繪示於圖式中。如第1圖與第2圖所示，本實施例之顯示裝置100包括第一基板10、共通電極14、第二基板20、複數個第一反射圖案32、第二反射層28、複數個透明電極42、顯示介質層50以及發光元件60。第一基板10與第二基板20相對設置，且第一基板10與第二基板20為透明基板。第一基板10與第二基板20可為硬式基板例如玻璃基板或石英基板，或是可撓式基板例如塑膠基板，但不以此為限。第二基板20具有內表面22、外表面24以及側端面26，其中第二基板20之內表面22面對第一基板10之內表面12，第二基板20之外表面24背對第一基板10之內表面12，而第二基板20之側端面26係為第二基板20的至少一側面，其可與內表面22與外表面24連接。第二基板20具有複數個畫素區30P，且各畫素區30P具有反射區30R和穿透區30T。畫素區30P可以陣列排列，且反射區30R和穿透區30T位於畫素區30P內。本實施例之反射區30R和穿透區30T係以並列方式配置，亦即各畫素區30P的反射區30R和穿透區30T實質上排列在同一行或同一列上，但不以此為限。反射區30R和穿透區30T的相對位置、面積比例與形狀等可視顯示需求或其它考量加以調整。Please refer to Figure 1 and Figure 2. 1 is a schematic top view of a display device according to a first embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view showing a display device according to a first embodiment of the present invention, in which features of the display device of the present invention are highlighted. Some of the components are not shown in the drawings. As shown in FIG. 1 and FIG. 2, the display device 100 of the present embodiment includes a first substrate 10, a common electrode 14, a second substrate 20, a plurality of first reflective patterns 32, a second reflective layer 28, and a plurality of transparent layers. The electrode 42, the display medium layer 50, and the light-emitting element 60. The first substrate 10 and the second substrate 20 are disposed opposite to each other, and the first substrate 10 and the second substrate 20 are transparent substrates. The first substrate 10 and the second substrate 20 may be a rigid substrate such as a glass substrate or a quartz substrate, or a flexible substrate such as a plastic substrate, but not limited thereto. The second substrate 20 has an inner surface 22, an outer surface 24, and a side end surface 26, wherein the inner surface 22 of the second substrate 20 faces the inner surface 12 of the first substrate 10, and the outer surface 24 of the second substrate 20 faces away from the first substrate The inner surface 12 of the second substrate 20 is at least one side of the second substrate 20, which is connectable to the inner surface 22 and the outer surface 24. The second substrate 20 has a plurality of pixel regions 30P, and each of the pixel regions 30P has a reflection region 30R and a penetration region 30T. The pixel regions 30P may be arranged in an array, and the reflection regions 30R and the penetration regions 30T are located in the pixel region 30P. The reflective region 30R and the transmissive region 30T of the present embodiment are arranged in a side-by-side manner, that is, the reflective region 30R and the transmissive region 30T of each pixel region 30P are substantially arranged in the same row or the same column, but limit. The relative position, area ratio and shape of the reflection zone 30R and the penetration zone 30T are adjusted according to visual display requirements or other considerations.
顯示介質層50設置於第一基板10與第二基板20之間。本實施例之顯示介質層50係選用液晶層，其可包括例如高分子聚合物網絡液晶(Polymer Network Liquid Crystal, PNLC)層、高分子分散型液晶(polymer dispersed liquid crystal, PDLC)層、膽固醇型液晶(Cholesteric liquid crystal, ChLC)層、高分子穩固式膽固醇液晶 (Polymer Stabilized Cholesteric Texture Liquid Crystal, PSCLC)或其它適合之液晶層，但不以此為限。在變化實施例中，顯示介質層50亦可包括可經由電場或電流控制而選擇性呈現散射態與透明態之顯示介質層，例如電泳層、電子墨水層或其它適合之顯示介質層。共通電極14設置於第一基板10之內表面12上。共通電極14為透明電極，其可為單層結構或多層堆疊結構。共通電極14的材料可包括金屬氧化物例如氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化鋁銦(AIO)、氧化銦(InO)、氧化鎵(gallium oxide, GaO)；奈米碳管、奈米銀顆粒；厚度小於60奈米(nm)的金屬或合金、有機透明導電材料、或其它適合的透明導電材料。另外，本實施例之共通電極14可為整面電極，其可對應多個畫素區30P，但不以此為限。例如，共通電極14也可對應單一畫素區30P，或者共通電極14也可為圖案化電極。The display medium layer 50 is disposed between the first substrate 10 and the second substrate 20. The display medium layer 50 of this embodiment is a liquid crystal layer, which may include, for example, a polymer network liquid crystal (PNLC) layer, a polymer dispersed liquid crystal (PDLC) layer, and a cholesterol type. Liquid crystal (Cholesteric liquid crystal, ChLC) layer, Polymer Stabilized Cholesteric Crystal Liquid Crystal (PSCLC) or other suitable liquid crystal layer, but not limited thereto. In a variant embodiment, display medium layer 50 can also include a display medium layer, such as an electrophoretic layer, an electronic ink layer, or other suitable display medium layer that can selectively exhibit a scattering state and a transparent state via electric field or current control. The common electrode 14 is disposed on the inner surface 12 of the first substrate 10. The common electrode 14 is a transparent electrode, which may be a single layer structure or a multilayer stack structure. The material of the common electrode 14 may include a metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum oxide indium (AIO), indium oxide (InO), gallium oxide (gallium oxide). , GaO); carbon nanotubes, nano silver particles; metals or alloys having a thickness of less than 60 nanometers (nm), organic transparent conductive materials, or other suitable transparent conductive materials. In addition, the common electrode 14 of the embodiment may be a full-surface electrode, which may correspond to the plurality of pixel regions 30P, but is not limited thereto. For example, the common electrode 14 may also correspond to a single pixel region 30P, or the common electrode 14 may also be a patterned electrode.
第一反射圖案32設置於第二基板20之內表面22上，並分別位於各反射區30R內。進一步說明，第一反射圖案32設置於反射區30R內，但並未設置於穿透區30T內。第二反射層28設置於第二基板20上並至少位於穿透區30T內。在本實施例中，第二反射層28係為整面反射層，其可全面性設置於第二基板20的外表面24上，也就是說，第二反射層28可以同時涵蓋穿透區30T與反射區30R。此外，第二反射層28可以與第二基板20的外表面24接觸，但不以此為限。第一反射圖案32與第二反射層28的材料係選用具有反射性的材料，其可包括金屬例如鋁(aluminum)、鉑(platinum)、銀(silver)、鈦(titanium)、鉬(molybdenum)、鋅(zinc)、錫(tin)、鉻(chromium)或其它適合之金屬或合金，但不以此為限。第一反射圖案32與第二反射層28的材料也可選用化合物、高分子材料或其它具有良好反射效果的材料。第一反射圖案32與第二反射層28之其中任一者均可以為單層結構或多層堆疊結構，且第一反射圖案32與第二反射層28可選用相同或不同材料。The first reflective patterns 32 are disposed on the inner surface 22 of the second substrate 20 and are respectively located in the respective reflective regions 30R. Further, the first reflective pattern 32 is disposed in the reflective region 30R, but is not disposed in the transmissive region 30T. The second reflective layer 28 is disposed on the second substrate 20 and located at least within the penetrating region 30T. In this embodiment, the second reflective layer 28 is a full-surface reflective layer, which can be comprehensively disposed on the outer surface 24 of the second substrate 20, that is, the second reflective layer 28 can simultaneously cover the penetration region 30T. With the reflection zone 30R. In addition, the second reflective layer 28 may be in contact with the outer surface 24 of the second substrate 20, but is not limited thereto. The materials of the first reflective pattern 32 and the second reflective layer 28 are selected from reflective materials, which may include metals such as aluminum, platinum, silver, titanium, molybdenum. , zinc, tin, chromium or other suitable metal or alloy, but not limited to this. The material of the first reflective pattern 32 and the second reflective layer 28 may also be selected from a compound, a polymer material or other materials having a good reflection effect. Each of the first reflective pattern 32 and the second reflective layer 28 may be a single layer structure or a multi-layer stacked structure, and the first reflective pattern 32 and the second reflective layer 28 may be the same or different materials.
透明電極42設置於第二基板20之內表面12上並至少分別位於各穿透區30T內。在本實施例中，透明電極42可僅設置於穿透區30T內，但不以此為限。精確而言，位於反射區30R的第一反射圖案32除了作為反射層之外，可同時作為反射畫素電極，而位於穿透區30T的透明電極42可作為穿透畫素電極。此外，本實施例之顯示面板100可以應用在鏡面顯示面板，在此狀況下第一反射圖案32及/或第二反射層28可具有平坦表面，以增加鏡面反射效果。透明電極42的材料可選用與共通電極14相同的透明導電材料，不再贅述。此外，第一反射圖案32上可以更進一步設置透明導電層或保護層(圖未示)，以避免金屬氧化或腐蝕等問題。The transparent electrodes 42 are disposed on the inner surface 12 of the second substrate 20 and are located at least in the respective penetration regions 30T. In this embodiment, the transparent electrode 42 may be disposed only in the penetration region 30T, but is not limited thereto. Specifically, the first reflective pattern 32 located in the reflective region 30R can serve as a reflective pixel electrode in addition to the reflective layer, and the transparent electrode 42 located in the transmissive region 30T can function as a transmissive pixel electrode. In addition, the display panel 100 of the present embodiment can be applied to a mirror display panel, in which case the first reflective pattern 32 and/or the second reflective layer 28 can have a flat surface to increase the specular reflection effect. The material of the transparent electrode 42 can be selected from the same transparent conductive material as the common electrode 14, and will not be described again. In addition, a transparent conductive layer or a protective layer (not shown) may be further disposed on the first reflective pattern 32 to avoid problems such as metal oxidation or corrosion.
本實施例之顯示裝置100可為主動式顯示裝置，因此各畫素區30P內還可進一步配置主動開關元件，例如薄膜電晶體元件70。薄膜電晶體元件70可以配置在反射區30R內，例如設置於第一反射圖案32之下，藉此可增加開口率。如第2圖的局部放大示意圖所示，薄膜電晶體元件70包括閘極G、閘極絕緣層GI、半導體通道層CH、源極S與汲極D。閘極G可與閘極線(圖未示)電性連接，源極S可與資料線(圖未示)電性連接，而汲極D可與第一反射圖案32和透明電極42電性連接，藉此第一反射圖案32可接收到畫素電壓，並與共通電極14所接收的共通電壓形成電場以驅動顯示介質層50。在本實施例中，薄膜電晶體元件70上可進一步覆蓋保護層72，而第一反射圖案32與透明電極42可設置於保護層72上，且第一反射圖案32至少部分覆蓋薄膜電晶體元件70。在本實施例中，第一反射圖案32與透明電極42可利用同一個薄膜電晶體元件70加以驅動，舉例而言，第一反射圖案32可經由保護層72的接觸洞TH與汲極D電性連接，而透明電極42則可與第一反射圖案32直接或間接電性連接，藉此與汲極D電性連接。在變化實施例中，反射區30R與穿透區30T也可分別採用不同個薄膜電晶體元件加以控制，也就是說，第一反射圖案32與透明電極42彼此不電性連接，並分別利用對應的薄膜電晶體元件加以控制。本實施例的薄膜電晶體元件70係以底閘型(bottom-gate)薄膜電晶體元件為範例，但不以此為限，例如薄膜電晶體元件70也可選用頂閘型(top-gate)薄膜電晶體元件、雙閘型(dual-gate)或其它型式的薄膜電晶體元件。The display device 100 of the present embodiment may be an active display device, and thus an active switching element such as a thin film transistor element 70 may be further disposed in each of the pixel regions 30P. The thin film transistor element 70 may be disposed within the reflective region 30R, for example, disposed under the first reflective pattern 32, whereby the aperture ratio may be increased. As shown in a partially enlarged schematic view of FIG. 2, the thin film transistor element 70 includes a gate G, a gate insulating layer GI, a semiconductor channel layer CH, a source S, and a drain D. The gate G can be electrically connected to a gate line (not shown), the source S can be electrically connected to a data line (not shown), and the drain D can be electrically connected to the first reflective pattern 32 and the transparent electrode 42. The connection is such that the first reflective pattern 32 can receive the pixel voltage and form an electric field with the common voltage received by the common electrode 14 to drive the display medium layer 50. In this embodiment, the thin film transistor element 70 may be further covered with the protective layer 72, and the first reflective pattern 32 and the transparent electrode 42 may be disposed on the protective layer 72, and the first reflective pattern 32 at least partially covers the thin film transistor element. 70. In this embodiment, the first reflective pattern 32 and the transparent electrode 42 can be driven by the same thin film transistor element 70. For example, the first reflective pattern 32 can be electrically connected via the contact hole TH and the drain D of the protective layer 72. The transparent electrode 42 can be directly or indirectly electrically connected to the first reflective pattern 32, thereby being electrically connected to the drain D. In a variant embodiment, the reflective region 30R and the transmissive region 30T can also be controlled by different thin film transistor elements, that is, the first reflective pattern 32 and the transparent electrode 42 are not electrically connected to each other, and respectively corresponding to each other. The thin film transistor element is controlled. The thin film transistor element 70 of the present embodiment is exemplified by a bottom-gate thin film transistor element, but is not limited thereto. For example, the thin film transistor element 70 may also be a top-gate type. Thin film transistor elements, dual-gate or other types of thin film transistor elements.
發光元件60面對第二基板20之側端面26設置，其中發光元件60的數目可為單一個，設置在第二基板20之其中一側端面26，或發光元件60的數目可為複數個，設置於第二基板20之同一側端面26或不同側端面26，使光源均勻性更佳。本實施例之發光元件60可為發光二極體（Light Emitting Diode, LED）元件、冷陰極螢光燈管（Cold Cathode Fluorescent Lamp, CCFL）或其它各種型式的發光元件，但不以此為限。The light-emitting elements 60 are disposed facing the side end faces 26 of the second substrate 20, wherein the number of the light-emitting elements 60 may be single, disposed on one of the end faces 26 of the second substrate 20, or the number of the light-emitting elements 60 may be plural. The same side end surface 26 or different side end surfaces 26 of the second substrate 20 are disposed to make the light source uniformity better. The light-emitting element 60 of the present embodiment may be a Light Emitting Diode (LED) component, a Cold Cathode Fluorescent Lamp (CCFL), or other various types of light-emitting components, but not limited thereto. .
請參考第3圖與第4圖。第3圖繪示本發明之第一實施例之顯示裝置於暗態顯示模式下之示意圖，第4圖繪示本發明之第一實施例之顯示裝置於亮態顯示模式下之示意圖。本實施例以高分子聚合物網絡液晶(Polymer Network Liquid Crystal, PNLC)層為範例，但不以此為限。如第3圖所示，於暗態顯示模式下，當對第一反射圖案32/透明電極42與共通電極14之間施加高偏壓時，顯示介質層50會呈現澄清態，此時若環境光充足，在反射區30R內，由第一基板10射入的環境入射光L1會照射到第一反射圖案32後反射，在穿透區30T內，環境入射光L1會照射到第二反射層28後反射。由於第一反射圖案32與第二反射層28具有平坦表面，因此本實施例之顯示裝置100可提供鏡面反射效果作為暗態顯示模式。另外，環境光不足時，發光元件60所發出光線L2會由側端面26射入第二基板20並被第一反射圖案32與第二反射層28所反射且在穿透區30T射出第二基板20而在第一基板10與第二基板20間作全反射，藉此使用者40基本上不會觀看到光線L2，可做為暗態顯示模式。因此，在環境光充足的情況下，發光元件60可選擇性地被關閉而不提供光線L2以節省電力。Please refer to Figures 3 and 4. 3 is a schematic view showing the display device of the first embodiment of the present invention in a dark state display mode, and FIG. 4 is a schematic view showing the display device of the first embodiment of the present invention in a bright state display mode. In this embodiment, a polymer network liquid crystal (PNLC) layer is taken as an example, but not limited thereto. As shown in FIG. 3, in the dark state display mode, when a high bias voltage is applied between the first reflective pattern 32/transparent electrode 42 and the common electrode 14, the display medium layer 50 exhibits a clarified state. In the reflective region 30R, the ambient incident light L1 incident on the first substrate 10 is reflected by the first reflective pattern 32, and in the transmissive region 30T, the ambient incident light L1 is irradiated to the second reflective layer. 28 after reflection. Since the first reflective pattern 32 and the second reflective layer 28 have flat surfaces, the display device 100 of the present embodiment can provide a specular reflection effect as a dark state display mode. In addition, when the ambient light is insufficient, the light L2 emitted from the light-emitting element 60 is incident on the second substrate 20 from the side end surface 26 and is reflected by the first reflective pattern 32 and the second reflective layer 28 and exits the second substrate in the penetration region 30T. 20, the total reflection between the first substrate 10 and the second substrate 20 is performed, whereby the user 40 does not substantially see the light L2, and can be used as the dark state display mode. Therefore, in the case where the ambient light is sufficient, the light-emitting element 60 can be selectively turned off without providing the light L2 to save power.
如第4圖所示，於亮態顯示模式下，環境光充足時，當對第一反射圖案32/透明電極42與共通電極14之間施加低偏壓或不施加偏壓時，顯示介質層50會呈現散射態，其中散射程度與施加的電壓基本上成反比關係，因此可藉由控制第一反射圖案32/透明電極42與共通電極14之間施加的電壓值來控制顯示介質層50的散射程度，進而分別控制各畫素區30P的顯示灰階。於亮態顯示模式下，由第一基板10射入的環境入射光L1會經過顯示介質層50而被散射，再被第一反射圖案32和第二反射層28反射，然後再經過顯示介質層50而被二次散射，藉此使用者40可以觀察到散射光，做為亮態顯示模式。另一方面，環境光不足時，發光元件60所發出的光線L2會由側端面26射入第二基板20並被第一反射圖案32與第二反射層28所反射且在穿透區30T射出第二基板20而經過顯示介質層50，此時光線L2會產生散射而射出第一基板10而被使用者40所觀察到，作為亮態顯示模式。於環境光充足時，發光裝置60可被關閉而不提供光線L2以節省電力。As shown in FIG. 4, in the bright state display mode, when ambient light is sufficient, when a low bias or no bias is applied between the first reflective pattern 32/transparent electrode 42 and the common electrode 14, the dielectric layer is displayed. 50 will exhibit a scattering state in which the degree of scattering is substantially inversely proportional to the applied voltage, so that the display medium layer 50 can be controlled by controlling the voltage value applied between the first reflective pattern 32 / the transparent electrode 42 and the common electrode 14 . The degree of scattering, and thus the display gray scale of each pixel region 30P, is controlled. In the bright state display mode, the ambient incident light L1 incident by the first substrate 10 is scattered through the display medium layer 50, is reflected by the first reflective pattern 32 and the second reflective layer 28, and then passes through the display medium layer. 50 is secondarily scattered, whereby the user 40 can observe the scattered light as a bright display mode. On the other hand, when the ambient light is insufficient, the light L2 emitted from the light-emitting element 60 is incident on the second substrate 20 from the side end surface 26 and is reflected by the first reflective pattern 32 and the second reflective layer 28 and is emitted in the penetration region 30T. When the second substrate 20 passes through the display medium layer 50, the light ray L2 is scattered and emitted from the first substrate 10 and is observed by the user 40 as a bright state display mode. When ambient light is sufficient, the illumination device 60 can be turned off without providing light L2 to conserve power.
本發明之顯示裝置並不以上述實施例為限。下文將依序介紹本發明之其它實施例之顯示裝置，且為了便於比較各實施例之相異處並簡化說明，在下文之各實施例中使用相同的符號標注相同的元件，且主要針對各實施例之相異處進行說明，而不再對重覆部分進行贅述。The display device of the present invention is not limited to the above embodiment. Hereinafter, the display device of other embodiments of the present invention will be described in order, and in order to facilitate the comparison of the differences of the embodiments and simplify the description, the same components are denoted by the same reference numerals in the following embodiments, and mainly The differences between the embodiments will be explained, and the repeated portions will not be described again.
請參考第5圖。第5圖繪示本發明之第二實施例之顯示裝置的示意圖。本實施例和第一實施例相同的部分不再贅述。如第5圖所示，本實施例之顯示裝置200與第一實施例的顯示裝置100的主要差異為設置於第二基板20之內表面12上的透明電極42同時位於穿透區30T和反射區30R內。例如，透明電極42可由各穿透區30T進一步延伸至相鄰的反射區30R而覆蓋於第一反射圖案32並與第一反射圖案32接觸，藉此可避免第一反射圖案32產生氧化或腐蝕等問題。在變化實施例中，第一反射圖案32與透明電極42之間可進一步設置絕緣層(未圖示)，將第一反射圖案32與透明電極42分離而使兩者電性不相連。本實施例之薄膜電晶體元件70配置在反射區30R下方，且薄膜電晶體元件70可與透明電極42電性直接連接，或經由第一反射圖案32與透明電極42電性連接，藉此透明電極42可同時作為反射區30R與穿透區30T的畫素電極，而與第一基板10上的共通電極14共同驅動顯示介質層。Please refer to Figure 5. Fig. 5 is a schematic view showing a display device of a second embodiment of the present invention. The same portions of the embodiment as the first embodiment will not be described again. As shown in FIG. 5, the main difference between the display device 200 of the present embodiment and the display device 100 of the first embodiment is that the transparent electrode 42 disposed on the inner surface 12 of the second substrate 20 is simultaneously located in the penetrating region 30T and reflected. Within zone 30R. For example, the transparent electrode 42 may further extend from each of the transmissive regions 30T to the adjacent reflective region 30R to cover the first reflective pattern 32 and be in contact with the first reflective pattern 32, thereby preventing oxidation or corrosion of the first reflective pattern 32. And other issues. In a variant embodiment, an insulating layer (not shown) may be further disposed between the first reflective pattern 32 and the transparent electrode 42 to separate the first reflective pattern 32 from the transparent electrode 42 so that the two are electrically disconnected. The thin film transistor element 70 of the present embodiment is disposed under the reflective region 30R, and the thin film transistor element 70 can be electrically connected directly to the transparent electrode 42 or electrically connected to the transparent electrode 42 via the first reflective pattern 32, thereby being transparent. The electrode 42 can serve as a pixel electrode of the reflective region 30R and the transmissive region 30T at the same time, and together with the common electrode 14 on the first substrate 10, drive the display medium layer.
請參考第6圖。第6圖繪示本發明之第三實施例之顯示裝置的示意圖。如第6圖所示，本實施例之顯示裝置300與第一實施例相同部份不再贅述。本實施例與第一實施例相異處在於，本實施例之顯示裝置300更包括複數個彩色濾光圖案層80，設置於第一基板10之內表面12上且位於第一基板10和共通電極14間，用以提供彩色顯示效果。彩色濾光圖案層80係對應畫素區30P設置，例如本實施例之彩色濾光圖案層80係對應畫素區30P的反射區30R而未對應穿透區30T。在變化實施例中，彩色濾光圖案層80也可對應畫素區30P的穿透區30T而未對應反射區30R，或進一步設置於穿透區30T，亦即彩色濾光圖案層80可同時對應畫素區30P的穿透區30T與反射區30R。彩色濾光圖案層80可包括不同顏色的彩色濾光圖案層，舉例而言，彩色濾光圖案層80可包括紅色濾光圖案層82、綠色濾光圖案層84與藍色濾光圖案層86，分別對應不同的畫素區30P。在變化實施例中，彩色濾光圖案層80可以更包括黃色濾光圖案層或是僅設置於部份畫素區30P內，或是彩色濾光圖案層80可包括其它顏色的彩色濾光圖案層的組合，例如黃色(yellow)濾光圖案層、青色(cyan)濾光圖案層、品紅色(magenta)濾光圖案層。Please refer to Figure 6. Figure 6 is a schematic view showing a display device of a third embodiment of the present invention. As shown in FIG. 6, the display device 300 of the present embodiment will not be described again in the same portions as the first embodiment. The difference between the present embodiment and the first embodiment is that the display device 300 of the present embodiment further includes a plurality of color filter pattern layers 80 disposed on the inner surface 12 of the first substrate 10 and located on the first substrate 10 and common to each other. Between the electrodes 14, to provide a color display effect. The color filter pattern layer 80 is disposed corresponding to the pixel region 30P. For example, the color filter pattern layer 80 of the present embodiment corresponds to the reflection region 30R of the pixel region 30P and does not correspond to the penetration region 30T. In a variant embodiment, the color filter pattern layer 80 can also correspond to the penetration region 30T of the pixel region 30P without corresponding to the reflection region 30R, or further disposed in the penetration region 30T, that is, the color filter pattern layer 80 can simultaneously Corresponding to the penetration area 30T of the pixel area 30P and the reflection area 30R. The color filter pattern layer 80 may include color filter pattern layers of different colors. For example, the color filter pattern layer 80 may include a red filter pattern layer 82, a green filter pattern layer 84, and a blue filter pattern layer 86. , corresponding to different pixel areas 30P. In a variant embodiment, the color filter pattern layer 80 may further include a yellow filter pattern layer or may be disposed only in the partial pixel region 30P, or the color filter pattern layer 80 may include other color filter patterns. A combination of layers, such as a yellow filter pattern layer, a cyan filter pattern layer, and a magenta filter pattern layer.
請參考第7圖。第7圖繪示本發明之第四實施例之顯示裝置的示意圖。如第7圖所示，本實施例之顯示裝置300A與第二實施例相同部份不再贅述。本實施例與第二實施例之差異在於，本實施例之顯示裝置300A的彩色濾光圖案層80配置於第二基板20之內表面22上，例如位於第一反射圖案32上，精確而言，彩色濾光圖案層80可位於第一反射圖案32與透明電極42之間，但不以此為限。當彩色濾光圖案層80配置於第二基板20時，於環境光不足時，發光元件60所提供的光線會從第二基板20偶合入光，光線不會先被彩色濾光圖案層80所吸收，故可提高光利用率。經實證結果發現，相較於第三實施例將彩色濾光圖案層80設置於第一基板10上的作法，本實施例的反射率可約為第三實施例之第一基板10偶合入光之顯示裝置的20倍。此外，值得說明的是，本實施例之彩色濾光圖案層80不限定只位於反射區30R，亦可以位於穿透區30T，或同時位於反射區30R與穿透區30T。Please refer to Figure 7. Figure 7 is a schematic view showing a display device of a fourth embodiment of the present invention. As shown in FIG. 7, the display device 300A of the present embodiment will not be described again in the same portions as the second embodiment. The difference between the present embodiment and the second embodiment is that the color filter pattern layer 80 of the display device 300A of the present embodiment is disposed on the inner surface 22 of the second substrate 20, for example, on the first reflective pattern 32, precisely The color filter pattern layer 80 may be located between the first reflective pattern 32 and the transparent electrode 42 , but is not limited thereto. When the color filter pattern layer 80 is disposed on the second substrate 20, when the ambient light is insufficient, the light provided by the light-emitting element 60 is coupled into the light from the second substrate 20, and the light is not first colored by the color filter pattern layer 80. Absorption, so it can improve light utilization. It is found by the empirical results that the color filter pattern layer 80 is disposed on the first substrate 10 in comparison with the third embodiment, and the reflectance of the embodiment can be coupled to the first substrate 10 of the third embodiment. 20 times the display device. In addition, it should be noted that the color filter pattern layer 80 of the embodiment is not limited to being located only in the reflective region 30R, but also located in the transmissive region 30T, or at the same time in the reflective region 30R and the transmissive region 30T.
請參考第8圖。第8圖繪示本發明之第五實施例之顯示裝置的示意圖。如第8圖所示，本實施例之顯示裝置400與第一至第三實施例相同部份不再贅述。本實施例之顯示裝置400另包括透明黏著層90，設置於第二反射層28與第二基板20之間，用以將第二反射層28黏著於第二基板20的外表面24。本實施例之利用透明黏著層90黏著第二反射層28與第二基板20的作法具有製程簡單的優點，可應用至本發明之其它實施例。Please refer to Figure 8. Figure 8 is a schematic view showing a display device of a fifth embodiment of the present invention. As shown in FIG. 8, the display device 400 of the present embodiment will not be described again in the same portions as the first to third embodiments. The display device 400 of the present embodiment further includes a transparent adhesive layer 90 disposed between the second reflective layer 28 and the second substrate 20 for adhering the second reflective layer 28 to the outer surface 24 of the second substrate 20. The adhesion of the second reflective layer 28 and the second substrate 20 by the transparent adhesive layer 90 of the present embodiment has the advantage of simple process and can be applied to other embodiments of the present invention.
請參考第9圖。第9圖繪示本發明之第六實施例之顯示裝置的示意圖。如第9圖所示，與上述實施例不同處在於，本實施例之顯示裝置500的第二反射層28不是全面性設置，而是包括複數個第二反射圖案282分別位於穿透區30T內，且第二反射圖案282的面積可大於或等於穿透區30T的面積。也就是說，第二反射圖案282可以僅位於對應的穿透區30T內，或者可略大於穿透區30T的面積而與第一反射圖案32部分重疊。如此，可節省第二反射層28的材料的使用量。考量到製程誤差與發光元件60所發出的光線在第二基板20內的反射效果，第二反射圖案282面積可大於穿透區30T的面積(或透明電極42於穿透區30T的面積)5%，以避免漏光，但不以此為限。舉例而言，在考量機台與製程誤差等因素下，第二反射圖案282面積可進一步擴大，例如第二反射圖案282面積可大於穿透區30T的面積10%或20%。第二反射圖案282面積最大的情況可如上述實施例所揭示，亦即第二反射層28全面性配置於第二基板20之外表面24上。Please refer to Figure 9. Figure 9 is a schematic view showing a display device of a sixth embodiment of the present invention. As shown in FIG. 9, the difference from the above embodiment is that the second reflective layer 28 of the display device 500 of the present embodiment is not comprehensively disposed, but includes a plurality of second reflective patterns 282 respectively located in the penetration region 30T. And the area of the second reflective pattern 282 may be greater than or equal to the area of the penetration region 30T. That is, the second reflective pattern 282 may be located only within the corresponding penetrating region 30T, or may be slightly larger than the area of the penetrating region 30T to partially overlap the first reflective pattern 32. In this way, the amount of material used for the second reflective layer 28 can be saved. Considering the process error and the reflection effect of the light emitted by the light-emitting element 60 in the second substrate 20, the area of the second reflection pattern 282 may be larger than the area of the penetration region 30T (or the area of the transparent electrode 42 in the penetration region 30T). % to avoid light leakage, but not limited to this. For example, the area of the second reflective pattern 282 may be further expanded under consideration of factors such as the machine and the process error. For example, the area of the second reflective pattern 282 may be greater than 10% or 20% of the area of the penetration region 30T. The case where the area of the second reflective pattern 282 is the largest may be as disclosed in the above embodiment, that is, the second reflective layer 28 is entirely disposed on the outer surface 24 of the second substrate 20.
請參考第10圖。第10圖繪示本發明之第七實施例之顯示裝置的示意圖。如第10圖所示，和上述實施例不同處在於，本實施例之顯示裝置600的第二反射層28係設置於第二基板20之內表面22上，其中第二反射層28包括複數個第二反射圖案284，分別位於穿透區30T內。此外，為了讓發光元件60所發出的光線可偶合入顯示介質層50，第二反射圖案284的面積會小於或等於穿透區30T的面積(或透明電極42於穿透區30T的面積)。當第二反射圖案284的面積太小時，可能會造成暗態顯示模式(鏡面顯示)時的畫面不連續。因此，第二反射圖案284的面積較佳等於穿透區30T的面積或最小約為穿透區30T的面積的95%，但不以此為限。舉例而言，在考量機台與製程誤差等因素下，第二反射圖案284的面積可為穿透區30T的面積的90%或80%。此外，本發明亦可以於第一基板10的內表面12上配置遮光圖案例如黑色矩陣，藉此在暗態顯示模式(鏡面顯示)下可遮蔽由於第二反射圖案284的面積太小時或製程誤差等因素所造成的畫面不連續問題。此外，本實施例之顯示裝置600可另包括絕緣層31，設置於第二反射層28與透明電極42之間。絕緣層31可為單層或多層結構，且其材料可包括無機絕緣材料(例如氧化矽、氮化矽、氮氧化矽、或其它適合之絕緣材料)、有機絕緣材料(例如無色/有色光阻、聚亞醯胺、聚酯、苯並環丁烯(benzocyclobutene，BCB)、聚甲基丙烯酸甲酯(polymethylmethacrylate，PMMA)、聚乙烯苯酚(poly(4-vinylphenol)，PVP)、聚乙烯醇(polyvinyl alcohol，PVA)、聚四氟乙烯(polytetrafluoroethene，PTFE)、或其它適合之絕緣材料)、或其它適合之絕緣材料，但不以此為限。值得說明的是，由於第二反射層28與其它元件(包括薄膜電晶體元件70、第一反射圖案32與透明電極42)均製作在第二基板20之內表面22，因此可使用現行設備，不需額外增加雙面製程的設備。Please refer to Figure 10. Figure 10 is a schematic view showing a display device of a seventh embodiment of the present invention. As shown in FIG. 10, the difference from the above embodiment is that the second reflective layer 28 of the display device 600 of the present embodiment is disposed on the inner surface 22 of the second substrate 20, wherein the second reflective layer 28 includes a plurality of The second reflective patterns 284 are respectively located in the penetrating regions 30T. In addition, in order to allow the light emitted by the light-emitting element 60 to be coupled into the display medium layer 50, the area of the second reflective pattern 284 may be less than or equal to the area of the penetration region 30T (or the area of the transparent electrode 42 in the penetration region 30T). When the area of the second reflective pattern 284 is too small, the picture may be discontinuous in the dark state display mode (mirror display). Therefore, the area of the second reflective pattern 284 is preferably equal to or less than 95% of the area of the penetration region 30T, but is not limited thereto. For example, the area of the second reflective pattern 284 may be 90% or 80% of the area of the penetration region 30T under consideration of factors such as machine and process error. In addition, the present invention can also configure a light shielding pattern such as a black matrix on the inner surface 12 of the first substrate 10, thereby shielding the area of the second reflective pattern 284 from being too small or processing error in the dark state display mode (mirror display). The problem of discontinuity of the picture caused by other factors. In addition, the display device 600 of the present embodiment may further include an insulating layer 31 disposed between the second reflective layer 28 and the transparent electrode 42. The insulating layer 31 may be a single layer or a multilayer structure, and the material thereof may include an inorganic insulating material (for example, yttrium oxide, tantalum nitride, ytterbium oxynitride, or other suitable insulating material), and an organic insulating material (for example, a colorless/colored resist). , polyamidoamine, polyester, benzocyclobutene (BCB), polymethylmethacrylate (PMMA), poly(4-vinylphenol), PVP, polyvinyl alcohol Polyvinyl alcohol (PVA), polytetrafluoroethene (PTFE), or other suitable insulating materials, or other suitable insulating materials, but not limited thereto. It should be noted that since the second reflective layer 28 and other components (including the thin film transistor element 70, the first reflective pattern 32 and the transparent electrode 42) are formed on the inner surface 22 of the second substrate 20, current equipment can be used. There is no need to add additional equipment for the two-sided process.
綜上所述，本發明之顯示裝置藉由第一反射圖案、第二反射層與發光元件的適當配置，可以在環境光足夠時提供暗態顯示模式(鏡面顯示效果)，而在環境光不足時提供亮態顯示模式，藉此可兼顧節能與顯示效果。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。In summary, the display device of the present invention can provide a dark state display mode (mirror display effect) when the ambient light is sufficient by the proper arrangement of the first reflective pattern, the second reflective layer and the light emitting element, and the ambient light is insufficient. The bright display mode is provided to balance energy saving and display effects. The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
100‧‧‧顯示裝置
10‧‧‧第一基板
20‧‧‧第二基板
50‧‧‧顯示介質層
60‧‧‧發光元件
12‧‧‧內表面
14‧‧‧共通電極
22‧‧‧內表面
24‧‧‧外表面
26‧‧‧側端面
30P‧‧‧畫素區
30R‧‧‧反射區
30T‧‧‧穿透區
32‧‧‧第一反射圖案
28‧‧‧第二反射層
42‧‧‧透明電極
70‧‧‧薄膜電晶體元件
G‧‧‧閘極
GI‧‧‧閘極絕緣層
CH‧‧‧半導體通道層
S‧‧‧源極
D‧‧‧汲極
72‧‧‧保護層
TH‧‧‧接觸洞
80‧‧‧彩色濾光圖案層
82‧‧‧紅色濾光圖案層
84‧‧‧綠色濾光圖案層
86‧‧‧藍色濾光圖案層
282‧‧‧第二反射圖案
90‧‧‧透明黏著層
284‧‧‧第二反射圖案
31‧‧‧絕緣層
L1‧‧‧環境入射光
L2‧‧‧光線
40‧‧‧使用者
200‧‧‧顯示裝置
300‧‧‧顯示裝置
300A‧‧‧顯示裝置
400‧‧‧顯示裝置
500‧‧‧顯示裝置
600‧‧‧顯示裝置100‧‧‧ display device
10‧‧‧First substrate
20‧‧‧second substrate
50‧‧‧Display media layer
60‧‧‧Lighting elements
12‧‧‧ inner surface
14‧‧‧Common electrode
22‧‧‧ inner surface
24‧‧‧ outer surface
26‧‧‧ side end face
30P‧‧‧ pixel area
30R‧‧‧Reflective Zone
30T‧‧‧ penetration zone
32‧‧‧First reflection pattern
28‧‧‧ second reflective layer
42‧‧‧Transparent electrode
70‧‧‧Thin-film transistor components
G‧‧‧ gate
GI‧‧‧ gate insulation
CH‧‧‧Semiconductor channel layer
S‧‧‧ source
D‧‧‧汲
72‧‧‧Protective layer
TH‧‧‧Contact hole
80‧‧‧Color filter pattern layer
82‧‧‧Red filter pattern layer
84‧‧‧Green filter pattern layer
86‧‧‧Blue filter pattern layer
282‧‧‧second reflection pattern
90‧‧‧Transparent adhesive layer
284‧‧‧second reflection pattern
31‧‧‧Insulation
L1‧‧‧Environmental incident light
L2‧‧‧Light
40‧‧‧Users
200‧‧‧ display device
300‧‧‧ display device
300A‧‧‧ display device
400‧‧‧ display device
500‧‧‧ display device
600‧‧‧ display device
第1圖繪示本發明之第一實施例之顯示裝置的上視示意圖。 第2圖繪示本發明之第一實施例之顯示裝置之剖面示意圖。 第3圖繪示本發明之第一實施例之顯示裝置於暗態顯示模式下之示意圖。 第4圖繪示本發明之第一實施例之顯示裝置於亮態顯示模式下之示意圖。 第5圖繪示本發明之第二實施例之顯示裝置的示意圖。 第6圖繪示本發明之第三實施例之顯示裝置的示意圖。 第7圖繪示本發明之第四實施例之顯示裝置的示意圖。 第8圖繪示本發明之第五實施例之顯示裝置的示意圖。 第9圖繪示本發明之第六實施例之顯示裝置的示意圖。 第10圖繪示本發明之第七實施例之顯示裝置的示意圖。Fig. 1 is a top plan view showing a display device according to a first embodiment of the present invention. 2 is a cross-sectional view showing the display device of the first embodiment of the present invention. FIG. 3 is a schematic view showing the display device of the first embodiment of the present invention in a dark state display mode. 4 is a schematic view showing the display device of the first embodiment of the present invention in a bright state display mode. Fig. 5 is a schematic view showing a display device of a second embodiment of the present invention. Figure 6 is a schematic view showing a display device of a third embodiment of the present invention. Figure 7 is a schematic view showing a display device of a fourth embodiment of the present invention. Figure 8 is a schematic view showing a display device of a fifth embodiment of the present invention. Figure 9 is a schematic view showing a display device of a sixth embodiment of the present invention. Figure 10 is a schematic view showing a display device of a seventh embodiment of the present invention.
100‧‧‧顯示裝置 100‧‧‧ display device
10‧‧‧第一基板 10‧‧‧First substrate
20‧‧‧第二基板 20‧‧‧second substrate
50‧‧‧顯示介質層 50‧‧‧Display media layer
60‧‧‧發光元件 60‧‧‧Lighting elements
12‧‧‧內表面 12‧‧‧ inner surface
14‧‧‧共通電極 14‧‧‧Common electrode
22‧‧‧內表面 22‧‧‧ inner surface
24‧‧‧外表面 24‧‧‧ outer surface
26‧‧‧側端面 26‧‧‧ side end face
30P‧‧‧畫素區 30P‧‧‧ pixel area
30R‧‧‧反射區 30R‧‧‧Reflective Zone
30T‧‧‧穿透區 30T‧‧‧ penetration zone
32‧‧‧第一反射圖案 32‧‧‧First reflection pattern
28‧‧‧第二反射層 28‧‧‧ second reflective layer
42‧‧‧透明電極 42‧‧‧Transparent electrode
70‧‧‧薄膜電晶體元件 70‧‧‧Thin-film transistor components
G‧‧‧閘極 G‧‧‧ gate
GI‧‧‧閘極絕緣層 GI‧‧‧ gate insulation
CH‧‧‧半導體通道層 CH‧‧‧Semiconductor channel layer
S‧‧‧源極 S‧‧‧ source
D‧‧‧汲極 D‧‧‧汲
72‧‧‧保護層 72‧‧‧Protective layer
TH‧‧‧接觸洞 TH‧‧‧Contact hole
Claims (17)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104119909A TWI560492B (en) | 2015-06-22 | 2015-06-22 | Display device |
| CN201510470232.8A CN104977750B (en) | 2015-06-22 | 2015-08-04 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104119909A TWI560492B (en) | 2015-06-22 | 2015-06-22 | Display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI560492B TWI560492B (en) | 2016-12-01 |
| TW201701028A true TW201701028A (en) | 2017-01-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| TW104119909A TWI560492B (en) | 2015-06-22 | 2015-06-22 | Display device |
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| CN (1) | CN104977750B (en) |
| TW (1) | TWI560492B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI663536B (en) * | 2018-05-15 | 2019-06-21 | 薩摩亞商山力科技有限公司 | Electronic writing board |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106292045B (en) * | 2016-08-12 | 2019-12-03 | 京东方科技集团股份有限公司 | Light-emitting side substrate of mirror display device, preparation method thereof, and mirror display device |
| TWI641975B (en) * | 2017-08-24 | 2018-11-21 | 友達光電股份有限公司 | Display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7102717B2 (en) * | 2002-12-23 | 2006-09-05 | Au Optronics Corp. | Method of forming a color filter having various thicknesses and a transflective LCD with the color filter |
| TWI284769B (en) * | 2004-09-17 | 2007-08-01 | Hon Hai Prec Ind Co Ltd | Transflective liquid crystal display device |
| TWI318315B (en) * | 2006-07-12 | 2009-12-11 | Au Optronics Corp | Transflective liquid crystal panel and method of making the same |
| TWI340846B (en) * | 2006-08-04 | 2011-04-21 | Au Optronics Corp | Pixel structure of a transflective liquid crystal panel having a single gap |
| CN100414421C (en) * | 2006-08-28 | 2008-08-27 | 友达光电股份有限公司 | Transflective liquid crystal display panel |
| TWI366036B (en) * | 2007-03-15 | 2012-06-11 | Au Optronics Corp | A display panel and a light source used therein |
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2015
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| TWI663536B (en) * | 2018-05-15 | 2019-06-21 | 薩摩亞商山力科技有限公司 | Electronic writing board |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104977750B (en) | 2018-01-05 |
| TWI560492B (en) | 2016-12-01 |
| CN104977750A (en) | 2015-10-14 |
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