TW201630128A - Supporting glass substrate, laminated body, semiconductor package and manufacturing method thereof, electronic device, and glass substrate - Google Patents

Abstract

Supports the average thermal expansion coefficient of the glass substrate in the temperature range of 20 ° C ~ 200 ° C over 110 × 10-7 /°C and is 160×10-7 / °C below.

Description

Supporting glass substrate and laminated body using the same

The present invention relates to a supporting glass substrate and a laminated body using the same, and more particularly to a supporting glass substrate for supporting a substrate in a manufacturing step of a semiconductor package and a laminated body using the same .

Portable electronic devices such as mobile phones, notebook personal computers, and personal digital assistants (PDAs) require miniaturization and weight reduction. Along with this, the mounting space of semiconductor chips used in these electronic devices is also severely restricted, so that high-density mounting of semiconductor wafers becomes a problem. Therefore, in recent years, high-density mounting of a semiconductor package has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor wafers and wiring the semiconductor wafers.

Further, in a conventional Wafer-level packaging (WLP), a bump is formed in a wafer state and then diced by dicing. However, the conventional WLP is mounted in a state in which the back surface of the semiconductor wafer is exposed except that it is difficult to increase the number of pins. Therefore, there is a problem that the semiconductor wafer is likely to be defective.

Therefore, as a new WLP, a fan out type WLP is proposed. In the fan-out type WLP, the number of pins can be increased, and by protecting the end portion of the semiconductor wafer, defects or the like of the semiconductor wafer can be prevented.

[Problems to be solved by the invention]

In the fan-out type WLP, a plurality of semiconductor wafers are molded by a sealing material of a resin, and a step of forming a processed substrate, wiring on one surface of the processed substrate, and a step of forming a solder bump are performed.

These steps are carried out by heat treatment at about 200 ° C, and thus the sealing material is deformed and the size of the processed substrate is changed. When the size of the processed substrate is changed, it is difficult to wire a high surface of one surface of the processed substrate, and it is also difficult to accurately form the solder bump.

In order to suppress the dimensional change of the processed substrate, it is effective to use a support substrate for supporting the processed substrate. However, even when a support substrate is used, there is a case where the size of the processed substrate changes.

The present invention has been made in view of the above circumstances, and a technical object thereof is to create a support substrate that does not easily change the size of a processed substrate and a laminate using the same, thereby contributing to high-density mounting of the semiconductor package. [Means for solving the problem]

The inventors of the present invention conducted various experiments, and found that the present invention can be solved by using a glass substrate as a supporting substrate and strictly defining the thermal expansion coefficient of the glass substrate. That is, the supporting glass substrate of the present invention is characterized in that the average linear thermal expansion coefficient in the temperature range of 20 ° C to 200 ° C exceeds 110 × 10 ^-7 / ° C and is 160 × 10 ^-7 / ° C or lower. Here, the "average linear thermal expansion coefficient in a temperature range of 20 ° C to 200 ° C" can be measured by a dilatometer.

The glass substrate is easy to smooth the surface and has rigidity. Thereby, when a glass substrate is used as a support substrate, the processed substrate can be supported firmly and accurately. Further, the glass substrate easily transmits light such as ultraviolet light or infrared light. Therefore, when a glass substrate is used as the support substrate, the processing substrate and the supporting glass substrate can be easily fixed by providing an adhesive layer or the like with an ultraviolet curing adhesive or the like. Further, the processed substrate and the supporting glass substrate can be easily separated by providing a peeling layer that absorbs infrared rays or the like. Alternatively, the processed substrate and the supporting glass substrate can be easily separated by providing an adhesive layer or the like using an ultraviolet curing tape or the like.

Further, in the support glass substrate of the present invention, the average linear thermal expansion coefficient in the temperature range of 20 ° C to 200 ° C is set to be more than 110 × 10 ^-7 / ° C and 160 × 10 ^-7 / ° C or less. According to this, when the ratio of the semiconductor wafer in the processed substrate is small and the ratio of the sealing material is large, the thermal expansion coefficient of the processed substrate and the supporting glass substrate is easily matched. Further, if the thermal expansion coefficients of the two are matched, it is easy to suppress the dimensional change (especially warpage deformation) of the processed substrate during the processing. As a result, it is possible to perform wiring with high density on one surface of the processed substrate, and it is also possible to accurately form solder bumps.

Second, the supporting glass substrate of the present invention is characterized in that the average linear thermal expansion coefficient in the temperature range of 30 ° C to 380 ° C exceeds 115 × 10 ^-7 / ° C and is 165 × 10 ^-7 / ° C or lower. Here, the "average linear thermal expansion coefficient in a temperature range of 30 ° C to 380 ° C" can be measured by a dilatometer.

Third, the supporting glass substrate of the present invention is preferably a support for processing the substrate in the manufacturing step of the semiconductor package.

Fourth, the support glass substrate of the present invention is preferably formed by having a joint surface inside the glass, that is, by an overflow down-draw method.

Fifth, the support glass substrate of the present invention preferably has a Young's modulus of 65 GPa or more. Here, "Young's modulus" means a value measured by a bending resonance method. In addition, 1 GPa corresponds to about 101.9 Kgf/mm ² .

Sixth, the supporting glass substrate of the present invention preferably contains, as a glass composition, 50% to 70% of SiO ₂ , 1% to 20% of Al ₂ O ₃ , and 0% to 15% of B ₂ O by mass%. ₃ , 0% to 10% of MgO, 0% to 10% of CaO, 0% to 7% of SrO, 0% to 7% of BaO, 0% to 7% of ZnO, and 10% to 30% of Na ₂ O, and 2% to 25% of K ₂ O.

Seventh, the support glass substrate of the present invention preferably has a glass composition of 53% to 65% SiO ₂ , 3% to 13% Al ₂ O ₃ , and 0% to 10% B ₂ O by mass%. ₃ , 0% to 6% of MgO, 0% to 10% of CaO, 0% to 5% of SrO, 0% to 5% of BaO, 0% to 5% of ZnO, and 20% to 40% of Na ₂ O+K ₂ O, 12% to 21% Na ₂ O, and 5% to 21% K ₂ O. Here, "Na ₂ O+K ₂ O" is a total amount of Na ₂ O and K ₂ O.

Eighth, the support glass substrate of the present invention preferably has a plate thickness of less than 2.0 mm, a plate thickness deviation of 30 μm or less, and a warpage amount of 60 μm or less. Here, the "warpage amount" refers to a total of the absolute value of the maximum distance between the highest point and the least squared focal plane in the entire glass substrate, and the absolute value of the lowest squared point and the least squared focal plane, for example, The measurement was carried out by SBW-331ML/d manufactured by Kobelco Research Co., Ltd.

Ninth, the laminated body of the present invention includes at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the supporting glass substrate.

Tenth, the laminated body of the present invention preferably has the processing substrate including at least a semiconductor wafer molded with a sealing material.

Eleventh, the method of manufacturing a semiconductor package of the present invention is characterized by comprising the steps of: preparing a laminate including at least a processing substrate and a supporting glass substrate for supporting the processing substrate; and processing the processed substrate, and The supporting glass substrate is the supporting glass substrate.

Twelfth, the manufacturing method of the semiconductor package of the present invention preferably has a step of processing including wiring on a surface of the processed substrate.

Thirteenth, the manufacturing method of the semiconductor package of the present invention preferably processes the step of forming a solder bump on a surface of the processed substrate.

Fourteenth, the method of manufacturing a semiconductor package of the present invention is characterized in that it is fabricated by the method of manufacturing the semiconductor package.

Fifteenth, the electronic apparatus of the present invention includes a semiconductor package characterized in that the semiconductor package is the semiconductor package.

Sixteenth, the glass substrate of the present invention is characterized in that it contains 50% to 70% of SiO ₂ , 1% to 20% of Al ₂ O ₃ , and 0% to 15% of B ₂ as a glass composition. O ₃ , 0% to 10% of MgO, 0% to 10% of CaO, 0% to 7% of SrO, 0% to 7% of BaO, 0% to 7% of ZnO, and 10% to 30% of Na ₂ O, and 2% to 25% of K ₂ O, and the average linear thermal expansion coefficient in the temperature range of 20 ° C to 200 ° C exceeds 110 × 10 ^-7 / ° C and is 160 × 10 ^-7 / ° C or less.

Seventeenth, the glass substrate of the present invention is characterized by containing, as a glass composition, 50% to 70% of SiO ₂ , 1% to 20% of Al ₂ O ₃ , and 0% to 15% of B ₂ by mass%. O ₃ , 0% to 10% of MgO, 0% to 10% of CaO, 0% to 7% of SrO, 0% to 7% of BaO, 0% to 7% of ZnO, and 10% to 30% of Na ₂ O, and 2% to 25% of K ₂ O, and the average linear thermal expansion coefficient in the temperature range of 30 ° C to 380 ° C exceeds 115 × 10 ^-7 / ° C and is 165 × 10 ^-7 / ° C or less.

In the supporting glass substrate of the present invention, it is more than 110 × 10 ^-7 / ° C and is 160 × 10 ^-7 / ° C or less, preferably 115 × 10 ^-7 / ° C or more and 155 × 10 ^-7 / ° C or less, particularly preferably It is 120 × 10 ^-7 / ° C or more and 150 × 10 ^-7 / ° C or less. When the average linear thermal expansion coefficient in the temperature range of 20 ° C to 200 ° C is outside the above range, the thermal expansion coefficient of the processed substrate and the supporting glass substrate is difficult to match. Further, if the thermal expansion coefficients of the two do not match, dimensional changes (especially warpage deformation) of the processed substrate are likely to occur during the processing.

The average linear thermal expansion coefficient in the temperature range of 30 ° C to 380 ° C exceeds 115 × 10 ^-7 / ° C and is 165 × 10 ^-7 / ° C or less, preferably 120 × 10 ^-7 / ° C or more and 160 × 10 ^-7 / Below °C, it is particularly preferably 125 × 10 ^-7 / ° C or more and 155 × 10 ^-7 / ° C or less. When the average linear thermal expansion coefficient in the temperature range of 30 ° C to 380 ° C is outside the above range, the thermal expansion coefficient of the processed substrate and the supporting glass substrate is difficult to match. Further, if the thermal expansion coefficients of the two do not match, dimensional changes (especially warpage deformation) of the processed substrate are likely to occur during the processing.

The support glass substrate of the present invention preferably has a glass composition of 50% to 70% SiO ₂ , 1% to 20% Al ₂ O ₃ , 0% to 15% B ₂ O ₃ , 0 by mass%. % to 10% of MgO, 0% to 10% of CaO, 0% to 7% of SrO, 0% to 7% of BaO, 0% to 7% of ZnO, 10% to 30% of Na ₂ O and 2 % to 25% of K ₂ O. The reason for limiting the content of each component as described above is shown below. In the description of the content of each component, the % expression indicates the mass % unless otherwise specified.

SiO ₂ is a main component of the skeleton forming the glass. The content of SiO ₂ is preferably 50% to 70%, 53% to 67%, 55% to 65%, 56% to 63%, and particularly preferably 57% to 62%. When the content of SiO ₂ is too small, the Young's modulus and acid resistance are liable to lower. On the other hand, when the content of SiO ₂ is too large, the high-temperature viscosity is increased, and the meltability is likely to be lowered. In addition, devitrified crystals such as cristobalite are easily precipitated, and the liquidus temperature is likely to rise.

Al ₂ O ₃ is a component that increases the Young's modulus and is a component that suppresses phase separation and devitrification. The content of Al ₂ O ₃ is preferably from 1% to 20%, from 2% to 16%, from 2.5% to 14%, from 3% to 12%, from 3.5% to 10%, and particularly preferably from 4% to 8%. When the content of Al ₂ O ₃ is too small, the Young's modulus is liable to lower, and the glass is easily separated into phases and devitrified. On the other hand, when the content of Al ₂ O ₃ is too large, the high-temperature viscosity is increased, and the meltability and moldability are liable to lower.

B ₂ O ₃ is a component which improves meltability and devitrification resistance, and is a component which improves the scratch resistance and improves the strength. The content of B ₂ O ₃ is preferably 0% to 15%, 0% to 10%, 0% to 8%, 0% to 5%, 0% to 3%, and particularly preferably 0% to 1%. When the content of B ₂ O ₃ is too large, the Young's modulus and acid resistance are liable to lower.

From the viewpoint of increasing the Young's modulus, Al ₂ O ₃ -B ₂ O _{3 is} preferably more than 0%, 1% or more, 3% or more, 5% or more, and particularly preferably 7% or more. Further, "Al ₂ O ₃ -B ₂ O ₃ " means a value obtained by subtracting the content of B ₂ O ₃ from the content of Al ₂ O ₃ .

MgO is a component which lowers the high-temperature viscosity and improves the meltability, and is a component which significantly increases the Young's modulus in the alkaline earth metal oxide. The content of MgO is preferably from 0% to 10%, from 0% to 8%, from 0% to 7%, from 0.1% to 6%, from 0.5% to 5%, particularly preferably from 1% to 4%. If the content of MgO is too large, the devitrification resistance is liable to lower.

CaO is a component that significantly improves the meltability by lowering the high temperature viscosity. Further, it is a component which is relatively inexpensive in the introduction of the raw material into the alkaline earth metal oxide, so that the cost of the compounding is reduced. The content of CaO is preferably from 0% to 10%, from 0.5% to 6%, from 1% to 5%, particularly preferably from 2% to 4%. If the content of CaO is too large, the glass is easily devitrified. Further, if the content of CaO is too small, it is difficult to enjoy the above effects.

SrO is a component that suppresses phase separation and is a component that improves resistance to devitrification. The content of SrO is preferably from 0% to 7%, from 0% to 5%, from 0% to 3%, particularly preferably from 0% to less than 1%. If the content of SrO is too large, the cost of ingredients tends to increase.

BaO is a component that improves resistance to devitrification. The content of BaO is preferably from 0% to 7%, from 0% to 5%, from 0% to 3%, and from 0% to less than 1%. If the content of BaO is too large, the cost of ingredients tends to increase.

The mass ratio CaO/(MgO+CaO+SrO+BaO) is preferably 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, and particularly preferably 0.9 or more. If the mass ratio CaO/(MgO+CaO+SrO+BaO) is too small, the raw material cost is likely to increase. In addition, "CaO/(MgO+CaO+SrO+BaO)" is a value obtained by dividing the content of CaO by the total amount of MgO, CaO, SrO, and BaO.

ZnO is a component that significantly improves the meltability by lowering the high temperature viscosity. The content of ZnO is preferably from 0% to 7%, from 0% to 5%, from 0% to 3%, and from 0.1% to less than 1%. If the content of ZnO is too small, it is difficult to enjoy the above effect. Further, when the content of ZnO is too large, the glass is easily devitrified.

Na ₂ O and K ₂ O are components which are important for setting the average linear thermal expansion coefficient in a temperature range of 20 ° C to 200 ° C to more than 110 × 10 ^-7 / ° C to 160 × 10 ^-7 / ° C, and are lowered. High-temperature viscosity and remarkably improve the meltability, and contribute to the initial melting of the glass raw material. The content of Na ₂ O+K ₂ O is preferably 20% to 40%, 23% to 38%, 25% to 36%, 26% to 34%, and particularly preferably 27% to 33%. When the content of Na ₂ O+K ₂ O is too small, the meltability is liable to lower, and the coefficient of thermal expansion is unreasonably lowered. On the other hand, if the content of Na ₂ O+K ₂ O is too large, the coefficient of thermal expansion is unreasonably increased.

Na ₂ O is a component which is important for setting the average linear thermal expansion coefficient in a temperature range of 20 ° C to 200 ° C to more than 110 × 10 ^-7 / ° C to 160 × 10 ^-7 / ° C, and to lower the high temperature viscosity and A component which remarkably improves the meltability and contributes to the initial melting of the glass raw material. The content of Na ₂ O is preferably from 10% to 30%, from 12% to 25%, from 13% to 22%, from 14% to 21%, particularly preferably from 15% to 20%. When the content of Na ₂ O is too small, the meltability is liable to lower, and the coefficient of thermal expansion is unreasonably lowered. On the other hand, if the content of Na ₂ O is too large, there is a possibility that the coefficient of thermal expansion is unreasonably increased.

K ₂ O is a component which is important for specifying an average linear thermal expansion coefficient in a temperature range of 20 ° C to 200 ° C to exceed 110 × 10 ^-7 / ° C to 160 × 10 ^-7 / ° C, and to lower the high temperature viscosity and A component which improves the meltability and contributes to the initial melting of the glass raw material. The content of K ₂ O is preferably 2% to 25%, 5% to 25%, 7% to 22%, 8% to 20%, 9% to 19%, and particularly preferably 10% to 18%. When the content of K ₂ O is too small, the meltability is liable to lower, and the coefficient of thermal expansion is unreasonably lowered. On the other hand, if the content of K ₂ O is too large, there is a possibility that the coefficient of thermal expansion is unreasonably increased.

The mass ratio Al ₂ O ₃ /(Na ₂ O+K is considered from the viewpoint of the average linear thermal expansion coefficient in the temperature range of 20 ° C to 200 ° C exceeding 110 × 10 ^-7 / ° C to 160 × 10 ^-7 / ° C ₂ O) is preferably 0.05 to 0.7, 0.08 to 0.6, 0.1 to 0.5, 0.12 to 0.4, and particularly preferably 0.14 to 0.3. In addition, "Al ₂ O ₃ /(Na ₂ O+K ₂ O)" means a value obtained by dividing the content of Al ₂ O ₃ by the total amount of Na ₂ O and K ₂ O.

In addition to the above components, other components may be introduced as optional components. In addition, the content of the other components other than the component is preferably 10% or less, and particularly preferably 5% or less, from the viewpoint of the effect of the present invention.

Fe ₂ O ₃ is a component which can be introduced as an impurity component or a clarifier component. However, if the content of Fe ₂ O ₃ is too large, there is a possibility that the ultraviolet transmittance is lowered. In other words, when the content of Fe ₂ O ₃ is too large, it is difficult to appropriately adhere and peel off the processed substrate and the supporting glass substrate via the adhesive layer or the release layer. Therefore, the content of Fe ₂ O ₃ is preferably 0.05% or less, 0.03% or less, and particularly preferably 0.02% or less. Further, the "Fe ₂ O ₃ " mentioned in the present invention contains divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is converted into Fe ₂ O ₃ to be treated. The other oxides were treated in the same manner based on the oxides described.

As a clarifying agent, As ₂ O ₃ functions effectively, and from the viewpoint of the environment, it is preferred to reduce the component as much as possible. The content of As ₂ O ₃ is preferably 1% or less, 0.5% or less, and particularly preferably 0.1% or less, and is preferably substantially not contained. Here, "substantially does not contain As ₂ O ₃ " means that the content of As ₂ O ₃ in the glass composition is less than 0.05%.

Sb ₂ O ₃ is a component having a good clarifying effect in a low temperature region. The content of Sb ₂ O ₃ is preferably from 0% to 1%, from 0.01% to 0.7%, particularly preferably from 0.05% to 0.5%. When the content of Sb ₂ O ₃ is too large, the glass is easily colored. Further, when the content of Sb ₂ O ₃ is too small, it is difficult to enjoy the above effects.

SnO ₂ is a component having a good clarifying action in a high temperature region, and is a component which lowers the viscosity at a high temperature. The content of SnO ₂ is preferably from 0% to 1%, from 0.001% to 1%, from 0.01% to 0.9%, particularly preferably from 0.05% to 0.7%. When the content of SnO ₂ is too large, devitrified crystals of SnO ₂ are easily precipitated. Further, when the content of SnO ₂ is too small, it is difficult to enjoy the above effects.

Further, as long as the glass characteristics are not impaired, metal powders such as F, Cl, SO ₃ , C, or Al or Si may be introduced as clarifying agents, respectively. Further, CeO ₂ or the like may be introduced in about 3%, but it is necessary to pay attention to the decrease in the ultraviolet transmittance.

Cl is a component that promotes melting of the glass. When Cl is introduced into the glass composition, the melting temperature can be lowered and the clarification effect can be promoted. As a result, it is easy to achieve a reduction in the melting cost and a long life of the glass furnace. However, if the content of Cl is too large, there is a fear that the metal parts around the glass manufacturing furnace are corroded. Therefore, the content of Cl is preferably 3% or less, 1% or less, 0.5% or less, and particularly preferably 0.1% or less.

P ₂ O ₅ is suppressed through crystals precipitated out of the component. However, if P ₂ O ₅ is introduced in a large amount, the glass is easily separated into phases. Therefore, the content of P ₂ O ₅ is preferably 0% to 2.5%, 0% to 1.5%, 0% to 0.5%, and particularly preferably 0% to 0.3%.

TiO ₂ is a component that lowers high-temperature viscosity and improves meltability, and is a component that suppresses solarization. However, when TiO ₂ is introduced in a large amount, the glass is colored, and the transmittance is easily lowered. Therefore, the content of TiO ₂ is preferably 0% to 5%, 0% to 3%, 0% to 1%, and particularly preferably 0% to 0.02%.

ZrO ₂ is a component that improves chemical resistance and Young's modulus. However, when ZrO ₂ is introduced in a large amount, the glass is easily devitrified, and the raw material to be introduced is insoluble, so that unmelted crystalline foreign matter is mixed into the substrate of the product. Therefore, the content of ZrO ₂ is preferably from 0% to 5%, from 0% to 3%, from 0% to 1%, particularly preferably from 0% to 0.5%.

Y ₂ O ₃ , Nb ₂ O ₅ , and La ₂ O ₃ have an effect of increasing the strain point, Young's modulus, and the like. However, when the content of the components is 5%, especially more than 1%, there is a problem that the cost of the ingredients and the cost of the product are high.

The support glass substrate of the present invention preferably has the following characteristics.

The liquidus temperature is preferably less than 1150 ° C, 1120 ° C or less, 1100 ° C or less, 1080 ° C or less, 1050 ° C or less, 1010 ° C or less, 980 ° C or less, 960 ° C or less, 940 ° C or less, 920 ° C or less, 900 ° C or less. Especially preferred is below 880 °C. According to this, it is easy to form the glass substrate by the down-draw method, in particular, the overflow down-draw method. Therefore, it is easy to produce a glass substrate having a small thickness, and the thickness variation can be reduced without polishing the surface or by a small amount of polishing. As a result, It is also possible to reduce the manufacturing cost of the glass substrate. Further, in the production step of the glass substrate, it is easy to prevent a situation in which devitrified crystals are generated and the productivity of the glass substrate is lowered. Here, the "liquidus temperature" can be calculated by placing a glass powder remaining at 50 mesh (300 μm) through a standard sieve of 30 mesh (500 μm) into a platinum boat, in a temperature gradient furnace. The temperature was maintained for 24 hours and the temperature at which the crystals were precipitated was measured.

Viscosity at the liquidus temperature is preferably 10 ^{4. 3} dPa · s or more, 10 ^4.6 dPa · s or more, 10 ^5.0 dPa · s or more, 10 ^5.2 dPa · s or more, particularly preferably 10 ^{5. 3} dPa · s or more . According to this, since the glass substrate can be easily formed by the down-draw method, in particular, the overflow down-draw method, it is easy to produce a glass substrate having a small thickness, and the thickness variation can be improved without polishing the surface or by a small amount of polishing. As a result, The manufacturing cost of the glass substrate can be reduced. Further, in the production step of the glass substrate, it is easy to prevent a situation in which devitrification crystals are generated and the productivity of the glass substrate is lowered. Here, the "viscosity at the liquidus temperature" can be measured by a platinum ball pulling method. Further, the viscosity at the liquidus temperature is an index of formability, and the higher the viscosity at the liquidus temperature, the higher the formability.

The temperature at 10 ^2.5 dPa·s is preferably 1480 ° C or lower, 1400 ° C or lower, 1350 ° C or lower, 1300 ° C or lower, and particularly preferably 1100 ° C to 1250 ° C or lower. When the temperature at 10 ^2.5 dPa·s is increased, the meltability is lowered, and the production cost of the glass substrate is increased. Here, "the temperature at 10 ^2.5 dPa·s" can be measured by a platinum ball pulling method. Further, the temperature at 10 ^2.5 dPa·s corresponds to the melting temperature, and the lower the temperature, the higher the meltability.

In the support glass substrate of the present invention, the Young's modulus is preferably 65 GPa or more, 67 GPa or more, 68 GPa or more, 69 GPa or more, and more preferably 70 GPa or more. When the Young's modulus is too low, it is difficult to maintain the rigidity of the laminated body, and the processed substrate is likely to be deformed, warped, or damaged.

The support glass substrate of the present invention is preferably formed by a down-draw method, and more preferably by an overflow down-draw method. The overflow down-draw method is a method in which the molten glass is allowed to overflow from both sides of the heat-resistant flow-like structure, and the overflowed molten glass is formed to extend downward while being joined at the lower end of the flow-like structure. A glass substrate is produced. In the overflow down-draw method, the surface which should be the surface of the glass substrate is not in contact with the flow-like refractory, but is formed in a state of a free surface. Therefore, it is easy to produce a glass substrate having a small thickness, and the thickness variation can be reduced without polishing the surface. Alternatively, the overall plate thickness deviation can be reduced to less than 2.0 μm, in particular to less than 1.0 μm, with a small amount of grinding. As a result, the manufacturing cost of the glass substrate can be reduced. Further, the structure or material of the launder structure is not particularly limited as long as the desired size or surface precision can be achieved. Further, the method of applying the force when performing the downward stretching molding is not particularly limited. For example, a method in which a heat-resistant roller having a sufficiently large width is rotated while being in contact with the glass may be used, or a plurality of pairs of heat-resistant rollers may be extended only in contact with the vicinity of the end surface of the glass. method.

As a method of forming the glass substrate, in addition to the overflow down-draw method, for example, a down hole drawing method, a re-drawing method, a floating method, or the like can be employed.

The glass substrate of the present invention is preferably substantially disk-shaped or wafer-shaped, and preferably has a diameter of 100 mm or more and 500 mm or less, and more preferably 150 mm or more and 450 mm or less. Accordingly, it is easy to apply to the manufacturing steps of the semiconductor package. It may be processed into a shape other than this, such as a rectangular shape, as needed.

In the glass substrate of the present invention, the roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, and particularly preferably 0.03 mm or less. The smaller the roundness, the easier it is to apply to the manufacturing steps of the semiconductor package. Further, the roundness is defined as a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.

In the supporting glass substrate of the present invention, the sheet thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, and particularly preferably 0.9 mm or less. The thinner the plate thickness, the lighter the quality of the laminate, and the operability is improved. On the other hand, when the thickness of the sheet is too small, the strength of the supporting glass substrate itself is lowered, and it is difficult to exhibit the function as a supporting substrate. Therefore, the sheet thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and more preferably 0.7 mm or more.

In the support glass substrate of the present invention, the thickness deviation is preferably 30 μm or less, 20 μm or less, 10 μm or less, 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, and particularly preferably 0.1. Mm ~ less than 1 μm. Further, the arithmetic mean roughness Ra is preferably 100 nm or less, 50 nm or less, 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, and particularly preferably 0.5 nm or less. The higher the surface precision, the easier it is to improve the processing accuracy. Since wiring accuracy can be improved in particular, high-density wiring can be performed. Further, the strength of the supporting glass substrate is improved, and the supporting glass substrate and the laminated body are less likely to be damaged. Further, the number of times of reuse of the supporting glass substrate can be increased. Further, the "arithmetic average roughness Ra" can be measured by a stylus type surface roughness meter or an atomic force microscope (AFM).

The support glass substrate of the present invention is preferably ground after being formed by an overflow down-draw method. Accordingly, the variation in the thickness of the sheet is easily set to 2 μm or less and 1 μm or less, and it is particularly preferable to be less than 1 μm.

In the support glass substrate of the present invention, the amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 μm to 45 μm, or more preferably 5 μm to 40 μm. The smaller the amount of warpage, the easier it is to improve the accuracy of the processing. Since wiring accuracy can be improved in particular, high-density wiring can be performed.

In the support glass substrate of the present invention, the ultraviolet transmittance at a wavelength of 300 nm in the thickness direction is preferably 40% or more, 50% or more, 60% or more, 70% or more, and particularly preferably 80% or more. When the ultraviolet transmittance is too low, it is difficult to adhere the processed substrate to the support substrate by the adhesive layer due to the irradiation of the ultraviolet light. Further, when an adhesive layer or the like is provided by an ultraviolet curable tape or the like, it is difficult to easily separate the processed substrate from the supporting glass substrate. In addition, the "ultraviolet transmittance at a wavelength of 300 nm in the thickness direction" can be evaluated by, for example, measuring a spectral transmittance at a wavelength of 300 nm using a two-beam spectrophotometer.

From the viewpoint of reducing the amount of warpage, the support glass substrate of the present invention preferably does not undergo chemical strengthening treatment, and is preferably subjected to chemical strengthening treatment from the viewpoint of mechanical strength. That is, from the viewpoint of reducing the amount of warpage, it is preferred that the surface does not have a compressive stress layer, and from the viewpoint of mechanical strength, it is preferred that the surface has a compressive stress layer.

The laminated body of the present invention includes at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the supporting glass substrate. Here, the technical features (preferred constitution and effect) of the laminate of the present invention are repeated with the technical features of the support glass substrate of the present invention. Therefore, in the present specification, the detailed description of the overlapping portions will be omitted.

The laminate of the present invention preferably has an adhesive layer between the processed substrate and the supporting glass substrate. The adhesive layer is preferably a resin. For example, a thermosetting resin, a photocurable resin (particularly, an ultraviolet curable resin) or the like is preferable. Moreover, it is preferable to have heat resistance to heat treatment which is resistant to the manufacturing steps of the semiconductor package. Thereby, the adhesive layer is not easily melted in the manufacturing process of the semiconductor package, and the precision of the processing can be improved. Further, since the processed substrate and the supporting glass substrate are easily fixed, an ultraviolet curable tape can also be used as the adhesive layer.

The laminate of the present invention preferably further has a release layer between the processed substrate and the support glass substrate, more specifically between the processed substrate and the adhesive layer, or a release layer between the support glass substrate and the adhesive layer. According to this, after the processing of the processed substrate is performed, the processed substrate is easily peeled off from the supporting glass substrate. From the viewpoint of productivity, peeling of the processed substrate is preferably performed by irradiation of light such as laser light. As the laser light source, an infrared laser light source such as a Yttrium Aluminium Garnet (YAG) laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 nm to 1300 nm) can be used. Further, a resin which is decomposed by irradiation of an infrared laser can be used in the release layer. Further, a substance which absorbs infrared rays with high efficiency and is converted into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment, or the like can be added to the resin.

The release layer contains a material that causes "in-layer peeling" or "interfacial peeling" due to irradiation of light such as laser light. In other words, when a light having a fixed intensity is irradiated, the bonding force between atoms or molecules of an atom or a molecule disappears or decreases, and ablation or the like occurs to cause peeling. In addition, there is a case where the component contained in the peeling layer is released by the irradiation of the irradiation light and is released, and the separation layer absorbs light to become a gas, and the vapor is released to cause separation.

In the laminate of the present invention, the supporting glass substrate is preferably larger than the processed substrate. Therefore, when the processing substrate and the supporting glass substrate are supported, even when the center positions of the both are slightly spaced apart, the edge portion of the processing substrate does not easily protrude from the supporting glass substrate.

A method of manufacturing a semiconductor package according to the present invention includes the steps of: preparing a laminated body including at least a processed substrate and a supporting glass substrate for supporting the processed substrate; and processing the processed substrate, and supporting the glass substrate The support glass substrate. Here, the technical features (better configuration and effect) of the method for producing a semiconductor package of the present invention are repeated with the technical features of the support glass substrate and the laminate of the present invention. Therefore, in the present specification, the detailed description of the overlapping portion will be omitted.

The method of manufacturing a semiconductor package of the present invention includes the steps of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate. The laminate including at least the processed substrate and the supporting glass substrate for supporting the processed substrate has the material configuration.

The method of manufacturing a semiconductor package of the present invention preferably further includes the step of transporting the laminate. Thereby, the processing efficiency of the processing can be improved. In addition, the "step of transporting the laminated body" and the "step of processing the processed substrate" need not be performed separately, and may be performed simultaneously.

In the method of manufacturing a semiconductor package of the present invention, the processing is preferably a process of performing wiring on one surface of a processed substrate or a process of forming a solder bump on one surface of the processed substrate. In the method of manufacturing a semiconductor package of the present invention, the size of the processed substrate is not easily changed during the processes, and thus the steps can be appropriately performed.

As a processing, in addition to the above, a surface of a processed substrate (usually a surface opposite to the supporting glass substrate) may be subjected to mechanical polishing, and a surface of the processed substrate (usually a supporting glass substrate) The surface of the opposite side is subjected to dry etching, and any one of the surfaces of the processed substrate (usually a surface opposite to the supporting glass substrate) is subjected to wet etching. Further, in the method of manufacturing a semiconductor package of the present invention, warpage is less likely to occur on the processed substrate, and the rigidity of the laminated body can be maintained. As a result, the processing can be appropriately performed.

The semiconductor package of the present invention is characterized by being fabricated by the method of fabricating the semiconductor package. Here, the technical features (better configuration and effect) of the semiconductor package of the present invention are repeated with the technical features of the supporting glass substrate, the laminated body, and the method of manufacturing the semiconductor package of the present invention. Therefore, the detailed description of this overlapping portion is omitted in the present specification.

The electronic device of the present invention includes a semiconductor package characterized in that the semiconductor package is the semiconductor package. Here, the technical features (preferred configuration and effect) of the electronic device of the present invention are repeated with the technical features of the supporting glass substrate, the laminated body, the method of manufacturing the semiconductor package, and the semiconductor package of the present invention. Therefore, the detailed description of this overlapping portion is omitted in the present specification.

The invention will be further described with reference to the drawings.

Fig. 1 is a conceptual perspective view showing an example of a laminated body 1 of the present invention. In FIG. 1, the laminated body 1 includes a supporting glass substrate 10 and a processed substrate 11. The support glass substrate 10 is attached to the processed substrate 11 in order to prevent dimensional changes of the processed substrate 11. The peeling layer 12 and the adhesive layer 13 are disposed between the supporting glass substrate 10 and the processed substrate 11. The peeling layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

As is apparent from Fig. 1, the laminated body 1 is laminated in the order of supporting the glass substrate 10, the peeling layer 12, the adhesive layer 13, and the processed substrate 11. The shape of the supporting glass substrate 10 is determined according to the processed substrate 11. In Fig. 1, the shapes of the supporting glass substrate 10 and the processed substrate 11 are substantially disk-shaped. As the peeling layer 12, for example, a resin which is decomposed by irradiation with a laser can be used. Further, a substance which absorbs laser light with high efficiency and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment, or the like may be added to the resin. The peeling layer 12 is formed by spin coating of a chemical vapor deposition (CVD) or a sol-gel method. The adhesive layer 13 contains a resin, and is formed by, for example, coating by various printing methods, an inkjet method, a spin coating method, a roll coating method, or the like. Further, an ultraviolet curing tape can also be used. The adhesive layer 13 is peeled off from the processed substrate 11 by the peeling layer 12, and then dissolved and removed by a solvent or the like. The ultraviolet curable tape can be removed by peeling off the tape after being irradiated with ultraviolet rays.

2a to 2f are conceptual cross-sectional views showing a manufacturing procedure of a fan-out type WLP. Fig. 2a shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. A peeling layer may also be formed between the support member 20 and the adhesive layer 21 as needed. Next, as shown in FIG. 2b, a plurality of semiconductor wafers 22 are attached to the adhesive layer 21. At this time, the active side surface of the semiconductor wafer 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2c, the semiconductor wafer 22 is molded using a resin sealing material 23. The sealing material 23 is a material which has a dimensional change after compression molding and a small dimensional change when forming a wiring. Then, as shown in FIG. 2d and FIG. 2e, the processed substrate 24 on which the semiconductor wafer 22 is molded is separated from the support member 20, and then adhered to the support glass substrate 26 via the adhesive layer 25. At this time, the surface on the surface of the processed substrate 24 opposite to the surface on which the semiconductor wafer 22 is buried is disposed on the side of the supporting glass substrate 26 . In this way, the laminated body 27 can be obtained. Further, a peeling layer may be formed between the adhesive layer 25 and the supporting glass substrate 26 as needed. Further, after the laminated body 27 obtained is conveyed, as shown in FIG. 2f, after the wiring 28 is formed on the surface of the processed substrate 24 on the semiconductor wafer 22 side, a plurality of solder bumps 29 are formed. Finally, after the processed substrate 24 is separated from the supporting glass substrate 26, the processed substrate 24 is cut into each of the semiconductor wafers 22 and used for the subsequent packaging step (Fig. 2g). [Example 1]

Hereinafter, the present invention will be described based on examples. In addition, the following examples are merely illustrative. The invention is not limited by the following examples.

Tables 1 to 5 show examples (sample No. 1 to sample No. 75) of the present invention.

[Table 1]

[Table 2]

[table 3]

[Table 4]

[table 5]

First, the glass raw material obtained by blending the glass raw material in the form of a glass composition in the table was placed in a platinum crucible and melted at 1500 ° C for 4 hours. When the glass batch was melted, it was stirred using a platinum stirrer for homogenization. Then, the molten glass was allowed to flow out onto the carbon plate, and after being formed into a plate shape, it was slowly cooled to a normal temperature at 3 ° C/min from a temperature higher than the slow cooling point by about 20 ° C. Each sample obtained, evaluation of a temperature range of 20 ℃ ~ 200 ℃ average linear thermal expansion coefficient α _{20 ~ 200,} average linear thermal expansion coefficient of the temperature range of 30 ℃ ~ 380 ℃ of α _{30 ~ 380,} the density [rho], the strain point Ps, slow cooling point Ta, softening point Ts, high temperature viscosity 10 ^4.0 dPa·s temperature, high temperature viscosity 10 ^3.0 dPa·s temperature, high temperature viscosity 10 ^2.5 dPa·s temperature, high temperature viscosity 10 ^2.0 dPa· The temperature under s, the liquidus temperature TL, the viscosity η at the liquidus temperature TL, and the Young's modulus E.

The average linear thermal expansion coefficient in the temperature range of 20 ℃ ~ 200 ℃ α _{20 ~ 200,} average linear thermal expansion coefficient in the temperature range of 30 ℃ ~ 380 ℃ α _{30 ~ 380} is measured using the expanded values.

The density ρ is a value measured by a well-known Archimedes method.

The strain point Ps, the slow cooling point Ta, and the softening point Ts are values measured based on the method of American Society for Testing and Materials (ASTM) C336.

The temperature at a high temperature viscosity of 10 ^4.0 dPa·s, 10 ^3.0 dPa·s, and 10 ^2.5 dPa·s is a value measured by a platinum ball pulling method.

The liquidus temperature TL is a value obtained by placing a glass powder remaining at 50 mesh (300 μm) through a standard sieve of 30 mesh (500 μm) into a platinum boat and holding it in a temperature gradient furnace for 24 hours. The temperature at which the crystals were precipitated was measured by microscopic observation. The viscosity η at the liquidus temperature is a value obtained by measuring the viscosity of the glass at the liquidus temperature TL by a platinum ball pulling method.

The Young's modulus E is a value measured by a resonance method.

As can be seen from Tables 1 to 5, in Sample No. 1 to Sample No. 75, the average linear thermal expansion coefficients α _{2 0 to 200} in the temperature range of 20 ° C to 200 ° C were 110 × 10 ^-7 / ° C to 145. ×10 ^-7 /°C, the average linear thermal expansion coefficient α _{30 to 380} in the temperature range of 30 ° C to 380 ° C is 116 × 10 ^-7 / ° C to 157 × 10 ^-7 / ° C. Therefore, it is considered that the sample No. 1 to the sample No. 75 are suitable as a supporting glass substrate for supporting the substrate in the manufacturing process of the semiconductor manufacturing apparatus. [Embodiment 2]

Each sample of [Example 2] was produced as follows. First, the glass raw material is blended so as to have the glass composition of sample No. 1 to sample No. 75 described in the table, and then supplied to a glass melting furnace to melt at 1450 ° C to 1550 ° C, and then the molten glass is supplied to the overflow. The flow down draw forming device was formed to have a plate thickness of 0.7 mm. After the obtained glass substrate (the overall thickness deviation of about 4.0 μm) was processed to be f300 mm × 0.7 mm thick, both surfaces thereof were subjected to a polishing treatment by a polishing apparatus. Specifically, the surfaces of the glass substrate are sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate are polished while rotating the glass substrate together with the pair of polishing pads. At the time of the polishing treatment, control is sometimes performed so that a part of the glass substrate protrudes from the polishing pad. Further, the polishing pad was made of urethane, and the polishing slurry used in the polishing treatment had an average particle diameter of 2.5 μm and a polishing rate of 15 m/min. The total thickness deviation and the amount of warpage of the glass substrate obtained by each of the obtained polished substrates were measured by SBW-331ML/d manufactured by Kobelco Scientific Research Co., Ltd. As a result, the overall plate thickness deviation was less than 1.0 μm, and the warpage amount was 35 μm or less. [Industrial availability]

The support glass substrate of the present invention is preferably used for processing a substrate in the manufacturing process of the semiconductor package, and can be applied in addition to the use. For example, it is possible to make full use of the advantage of high expansion, and it can be used as a substitute substrate for a high expansion metal substrate such as an aluminum alloy substrate, and can also be used as a substitute substrate for a high expansion ceramic substrate such as a zirconium substrate or a ferrite substrate.

1, 27‧‧ ‧ laminated body
10,26‧‧‧Support glass substrate
11, 24‧‧‧Processing substrate
12‧‧‧ peeling layer
13, 21, 25‧‧‧ adhesive layer
20‧‧‧Support components
22‧‧‧Semiconductor wafer
23‧‧‧ Sealing material
28‧‧‧Wiring
29‧‧‧ solder bumps

Fig. 1 is a conceptual perspective view showing an example of a laminated body of the present invention. Fig. 2a is a conceptual cross-sectional view showing a manufacturing procedure of a fan-out type WLP. Fig. 2b is a conceptual cross-sectional view showing a manufacturing procedure of a fan-out type WLP. Fig. 2c is a conceptual cross-sectional view showing a manufacturing procedure of a fan-out type WLP. Fig. 2d is a conceptual cross-sectional view showing a manufacturing step of a fan-out type WLP. Fig. 2e is a conceptual cross-sectional view showing a manufacturing procedure of a fan-out type WLP. Fig. 2f is a conceptual cross-sectional view showing a manufacturing procedure of a fan-out type WLP. Figure 2g is a conceptual cross-sectional view showing a manufacturing step of a fan-out type WLP

1‧‧ ‧ laminated body

10‧‧‧Support glass substrate

11‧‧‧Processing substrate

12‧‧‧ peeling layer

13‧‧‧Adhesive layer

Claims (17)

A supporting glass substrate characterized in that an average linear thermal expansion coefficient in a temperature range of from 20 ° C to 200 ° C exceeds 110 × 10 ^-7 / ° C and is 160 × 10 ^-7 / ° C or less. A support glass substrate characterized by having an average linear thermal expansion coefficient in a temperature range of from 30 ° C to 380 ° C of more than 115 × 10 ^-7 / ° C and not more than 165 × 10 ^-7 / ° C. The supporting glass substrate according to claim 1 or 2, which is used for processing the substrate in the manufacturing step of the semiconductor package. The supporting glass substrate according to any one of claims 1 to 3, which has a joint surface inside the glass. The supporting glass substrate according to any one of claims 1 to 4, which has a Young's modulus of 65 GPa or more. The supporting glass substrate according to any one of the items 1 to 5, wherein, as a glass composition, 50% to 70% of SiO ₂ and 1% to 20% of Al ₂ O are contained by mass%. ₃ , 0% to 15% B ₂ O ₃ , 0% to 10% MgO, 0% to 10% CaO, 0% to 7% SrO, 0% to 7% BaO, 0% to 7% ZnO, 10% to 30% Na ₂ O, and 2% to 25% K ₂ O. The supporting glass substrate according to claim 6, wherein the glass composition contains 53% to 65% of SiO ₂ , 3% to 13% of Al ₂ O ₃ , and 0% to 10% by mass%. B ₂ O ₃ , 0% to 6% MgO, 0% to 10% CaO, 0% to 5% SrO, 0% to 5% BaO, 0% to 5% ZnO, 20% to 40% Na ₂ O+K ₂ O, 12% to 21% Na ₂ O, and 5% to 21% K ₂ O. The supporting glass substrate according to any one of the items 1 to 7, wherein the thickness of the supporting glass substrate is less than 2.0 mm, the thickness deviation is 30 μm or less, and the amount of warpage is 60 μm or less. A laminated body comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate, wherein the supporting glass substrate is the supporting glass substrate according to any one of claims 1 to 8. . The laminate according to claim 9, wherein the processing substrate comprises at least a semiconductor wafer molded with a sealing material. A method of manufacturing a semiconductor package, comprising the steps of: preparing a laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate; and processing the processed substrate, and supporting the glass substrate as The support glass substrate according to any one of the items 1 to 8. The method of manufacturing a semiconductor package according to claim 11, wherein the processing includes the step of wiring on a surface of the processed substrate. The method of manufacturing a semiconductor package according to claim 11 or claim 12, wherein the processing includes the step of forming a solder bump on a surface of the processed substrate. A semiconductor package produced by the method of manufacturing a semiconductor package according to any one of claims 11 to 13. An electronic device comprising a semiconductor package, characterized in that: the semiconductor package is the semiconductor package as described in claim 14. A glass substrate comprising, as a glass composition, 50% to 70% SiO ₂ , 1% to 20% Al ₂ O ₃ , 0% to 15% B ₂ O ₃ , 0% by mass% ～10% of MgO, 0% to 10% of CaO, 0% to 7% of SrO, 0% to 7% of BaO, 0% to 7% of ZnO, 10% to 30% of Na ₂ O, and 2 % to 25% of K ₂ O, and the average linear thermal expansion coefficient in the temperature range of 20 ° C to 200 ° C exceeds 110 × 10 ^-7 / ° C and is 160 × 10 ^-7 / ° C or less. A glass substrate comprising, as a glass composition, 50% to 70% SiO ₂ , 1% to 20% Al ₂ O ₃ , 0% to 15% B ₂ O ₃ , 0% by mass% ～10% of MgO, 0% to 10% of CaO, 0% to 7% of SrO, 0% to 7% of BaO, 0% to 7% of ZnO, 10% to 30% of Na ₂ O, and 2 % to 25% of K ₂ O, and the average linear thermal expansion coefficient in the temperature range of 30 ° C to 380 ° C exceeds 115 × 10 ^-7 / ° C and is 165 × 10 ^-7 / ° C or less.