TW201635260A - Shift register circuit - Google Patents
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本發明係關於一種移位暫存電路,尤指一種具較少佈局面積及訊號走線之移位暫存電路。 The invention relates to a shift temporary storage circuit, in particular to a shift temporary storage circuit with less layout area and signal routing.
顯示面板包含有複數個畫素、閘極驅動電路以及源極驅動電路。閘極驅動電路包含複數級移位暫存器,用來提供複數個閘極驅動訊號,以控制畫素之開啟與關閉。源極驅動電路則用以寫入資料訊號至被開啟的畫素。此外,目前顯示面板常採用閘極驅動電路基板技術(gate driver on array;GOA),以提供畫素所需的閘極驅動訊號。與傳統的閘極驅動器不同的,採用GOA的電路因其製程可合併於顯示面板的薄膜電晶體陣列(TFT array)的製程,故可降低面板的生產成本。 The display panel includes a plurality of pixels, a gate driving circuit, and a source driving circuit. The gate drive circuit includes a plurality of shift register registers for providing a plurality of gate drive signals to control the turning on and off of the pixels. The source driver circuit is used to write the data signal to the pixel that is turned on. In addition, current display panels often use gate driver on array (GOA) to provide the gate drive signals required for pixels. Different from the conventional gate driver, the circuit using GOA can reduce the production cost of the panel because the process can be incorporated into the process of the TFT array of the display panel.
然而,目前已知的移位暫存電路內,係使用直流電壓源作為參考電壓以使訊號維持於一定的位準,如此一來佈局面積無法減少。此外,當電晶體持續受到直流電壓源的作動會產生偏壓效應(threshold voltage offset),使得移位暫存電路誤動作。 However, in the currently known shift register circuit, a DC voltage source is used as a reference voltage to maintain the signal at a certain level, so that the layout area cannot be reduced. In addition, when the transistor continues to be actuated by the DC voltage source, a threshold voltage offset is generated, causing the shift register circuit to malfunction.
因此,如何降低佈局面積又要避免移位暫存電路誤動作乃是本領域技術之人持續努力的目標。 Therefore, how to reduce the layout area and avoid shifting the temporary circuit malfunction is a goal of continuous efforts by those skilled in the art.
依照本發明之一實施例揭露一種移位暫存器,包括多級移位暫存電路,每一移位暫存電路包括:第一電晶體,具有第一端、第二端、及閘極端,其中第一電晶體之第一端用以接收輸入訊號,第一電晶體電連接於節點,第一電晶體之閘極端用以接收第一時脈訊號;第二電晶體,具有第一端、第二端、及閘極端,其中第二電晶體之閘極端電連接第一電晶體之第二端,第二電晶體之第二端用以輸出輸出訊號,第二電晶體之第一端用以接收第二時脈訊號;第三電晶體,具有第一端、第二端、及閘極端,其中第三電晶體之第一端電連接於第一電晶體之第二端,第三電晶體之閘極端用以接收一起始訊號;第四電晶體,具有第一端、第二端、及閘極端,其中第四電晶體之第一端電連接第二電晶體之第二端,第四電晶體之閘極端用以接收第四時脈訊號;及電容,耦接於節點及第二電晶體之第二端之間,其中起始訊號係為啟動畫面期間的同步訊號,時脈訊號的初始致能時間均晚於起始訊號,第四時脈訊號與第二時脈訊號互為反相且第四時脈訊號的初始相位較第二時脈訊號延遲180度,第一時脈訊號的初始相位較第二時脈訊號延遲270度。 According to an embodiment of the invention, a shift register includes a multi-stage shift register circuit, each shift register circuit includes: a first transistor having a first end, a second end, and a gate terminal The first end of the first transistor is configured to receive an input signal, the first transistor is electrically connected to the node, the gate end of the first transistor is configured to receive the first clock signal, and the second transistor has a first end a second end, and a gate terminal, wherein the gate of the second transistor is electrically connected to the second end of the first transistor, and the second end of the second transistor is used for outputting an output signal, and the first end of the second transistor The third transistor has a first end, a second end, and a gate terminal, wherein the first end of the third transistor is electrically connected to the second end of the first transistor, and the third The gate of the transistor is configured to receive a start signal; the fourth transistor has a first end, a second end, and a gate terminal, wherein the first end of the fourth transistor is electrically connected to the second end of the second transistor, The gate of the fourth transistor is used to receive the fourth clock signal; and the capacitor, the coupling Between the node and the second end of the second transistor, wherein the start signal is a synchronization signal during the startup screen, the initial activation time of the clock signal is later than the start signal, the fourth clock signal and the second signal The clock signals are mutually inverted and the initial phase of the fourth clock signal is delayed by 180 degrees from the second clock signal, and the initial phase of the first clock signal is delayed by 270 degrees from the second clock signal.
依照本發明之另一實施例揭露一種移位暫存電路,包括上拉單元,電連接於節點,依據第一時脈訊號導通上拉單元並上拉節點電壓;充電單元,電連接於節點,用以接收起始訊號;輸出單元電連接節點,包括第二輸入端以接收第二時脈訊號,根據節點電壓以輸出訊號至輸出端;及穩壓單元,電連接輸出端,包括第四輸入端用以接收第四時脈訊號,其中起始訊號係為啟動畫面期間的同步訊號,時脈訊號的初始致能時間均晚於起始訊號,第四時脈訊號與第二時脈訊號互為反相且第四時脈訊號的初始 相位較第二時脈訊號延遲180度,第一時脈訊號的初始相位較第二時脈訊號延遲270度。 According to another embodiment of the present invention, a shift register circuit includes a pull-up unit electrically connected to a node, and the pull-up unit is turned on according to the first clock signal and the node voltage is pulled up; the charging unit is electrically connected to the node. The output unit is electrically connected to the node, and the output unit is electrically connected to the node, and includes a second input end for receiving the second clock signal, and outputting the signal to the output end according to the node voltage; and a voltage stabilizing unit electrically connecting the output end, including the fourth input The terminal is configured to receive the fourth clock signal, wherein the start signal is a synchronization signal during the startup screen, the initial activation time of the clock signal is later than the start signal, and the fourth clock signal and the second clock signal are mutually Inverted and the initial of the fourth clock signal The phase is delayed by 180 degrees from the second clock signal, and the initial phase of the first clock signal is delayed by 270 degrees from the second clock signal.
綜上所述,透過本發明之技術方案的各實施例,通過時脈訊號CK1、CK2、CK3、及CK4驅動所述之移位暫存電路,達到降低訊號走線的功效以降低佈局面積,可提升顯示器開口率或者降低週邊區面積,此外還可抑制電晶體持續耦接至直流電壓源而造成之偏壓效應。 In summary, through the embodiments of the technical solution of the present invention, the shift register circuit is driven by the clock signals CK1, CK2, CK3, and CK4 to reduce the effect of the signal trace to reduce the layout area. It can increase the aperture ratio of the display or reduce the area of the peripheral area. In addition, it can suppress the bias effect caused by the transistor being continuously coupled to the DC voltage source.
100、200、300‧‧‧移位暫存電路 100, 200, 300‧‧‧ shift register circuit
110‧‧‧上拉單元 110‧‧‧Upper pull unit
120‧‧‧輸出單元 120‧‧‧Output unit
130、230、330‧‧‧充電單元 130, 230, 330‧‧‧Charging unit
140、240‧‧‧穩壓單元 140, 240‧‧‧ voltage regulator unit
M1、M2、M3、M4‧‧‧電晶體 M1, M2, M3, M4‧‧‧ transistors
C‧‧‧電容 C‧‧‧ capacitor
IN1、IN2、IN3、IN4‧‧‧輸入端 IN1, IN2, IN3, IN4‧‧‧ inputs
OUT‧‧‧輸出端 OUT‧‧‧ output
ING‧‧‧訊號端 ING‧‧‧ signal end
VST‧‧‧充電端 VST‧‧‧Charging end
CK1、CK2、CK3、CK4‧‧‧時脈訊號 CK1, CK2, CK3, CK4‧‧‧ clock signal
GN、GN-1‧‧‧輸出訊號 G N , G N-1 ‧‧‧ output signal
QN‧‧‧節點 Q N ‧‧‧ nodes
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:第1圖係依照本發明一實施例繪示之移位暫存電路之電路圖;第2圖係依照本發明一實施例繪示之移位暫存電路之電路圖;第3圖係依照本發明另一實施例繪示之移位暫存電路之電路圖;及第4圖係依照本發明一實施例繪示一移位暫存電路之驅動波形圖; The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 2 is a circuit diagram of a shift register circuit according to an embodiment of the invention; FIG. 3 is a circuit diagram of a shift register circuit according to another embodiment of the present invention; and FIG. 4 is a diagram according to another embodiment of the present invention; An embodiment of the present invention is a driving waveform diagram of a shift temporary storage circuit;
下文係舉實施例配合所附圖式作詳細說明,但所提供之實施例並非用以限制本發明所涵蓋的範圍,而結構操作之描述非用以限制其執行之順序,任何由元件重新組合之結構,所產生具有均等功效的裝置,皆為本發明所涵 蓋的範圍。此外,圖式僅以說明為目的,並未依照原尺寸作圖。為使便於理解,下述說明中相同元件將以相同之符號標示來說明。 The embodiments are described in detail below with reference to the accompanying drawings, but the embodiments are not intended to limit the scope of the invention, and the description of structural operations is not intended to limit the order of execution thereof The structure, the device having the equal effect, is the invention The scope of the cover. In addition, the drawings are for illustrative purposes only and are not drawn to the original dimensions. For ease of understanding, the same elements in the following description will be denoted by the same reference numerals.
關於本文中所使用之『第一』、『第二』、…等,並非特別指稱次序或順位的意思,亦非用以限定本發明,其僅僅是為了區別以相同技術用語描述的元件或操作而已。 The terms "first", "second", etc., used herein are not intended to refer to the order or order, nor are they intended to limit the invention, only to distinguish between elements or operations described in the same technical terms. Only.
請參考第1圖,第1圖為本發明一實施例之移位暫存電路100的電路圖。移位暫存電路100包括上拉單元110、輸出單元120、充電單元130及穩壓單元140、充電端VST、訊號端ING、輸入端IN1、輸入端IN2、輸入端IN4以及輸出端OUT。充電端VST用以接收起始訊號;輸入端IN1、輸入端IN2及輸入端IN4分別接收不同的時脈訊號CK1、CK2及CK4,而訊號端ING用以接收前級移位暫存電路的輸出端所輸出的輸出訊號GN-1。 Please refer to FIG. 1. FIG. 1 is a circuit diagram of a shift register circuit 100 according to an embodiment of the present invention. The shift register circuit 100 includes a pull-up unit 110, an output unit 120, a charging unit 130 and a voltage stabilizing unit 140, a charging terminal VST, a signal terminal ING, an input terminal IN1, an input terminal IN2, an input terminal IN4, and an output terminal OUT. The charging terminal VST is used for receiving the start signal; the input terminal IN1, the input terminal IN2 and the input terminal IN4 respectively receive different clock signals CK1, CK2 and CK4, and the signal terminal ING is used for receiving the output of the pre-stage shift register circuit. The output signal G N-1 output by the terminal.
上拉電路110與訊號端ING、節點QN及輸入端IN1耦接,輸入端IN1用以接收時脈訊號CK1並依據時脈訊號CK1之電位,控制訊號端ING與節點QN之間的電性連接。 The pull-up circuit 110 is coupled to the signal terminal ING, the node Q N and the input terminal IN1. The input terminal IN1 is configured to receive the clock signal CK1 and control the power between the signal terminal ING and the node Q N according to the potential of the clock signal CK1. Sexual connection.
輸出單元120與輸入端IN2、節點QN及輸出端OUT耦接,輸入端IN2用以接收時脈訊號CK2並用以依據節點QN之電位,控制輸入端IN2與輸出端OUT之間的電性連接。 The output unit 120 is coupled to the input terminal IN2, the node Q N and the output terminal OUT. The input terminal IN2 is configured to receive the clock signal CK2 and control the electrical connection between the input terminal IN2 and the output terminal OUT according to the potential of the node Q N . connection.
充電單元130與節點QN及充電端VST耦接,用以依據充電端VST電位,控制節點QN的電壓位準。 The charging unit 130 is coupled to the node Q N and the charging terminal VST for controlling the voltage level of the node Q N according to the potential of the charging terminal VST.
穩壓單元140與輸出端OUT及輸入端IN4耦接,輸入端IN4用以接收時脈訊號CK4並用以依據時脈訊號CK4,控制輸出端OUT的雷壓 位準。 The voltage stabilizing unit 140 is coupled to the output terminal OUT and the input terminal IN4, and the input terminal IN4 is configured to receive the clock signal CK4 and is used for controlling the lightning pressure of the output terminal OUT according to the clock signal CK4. Level.
於一實施例中,充電單元130與穩壓單元140可耦接到一電壓源VGL,如此充電單元130可根據充電端VST的電位對節點QN進行充放電。穩壓單元140可根據輸入端IN4的電位將輸出端OUT的電位維遲在低電壓位準,用以避免輸出端OUT的電位浮動。 In one embodiment, the charging unit 130 and the voltage stabilizing unit 140 can be coupled to a voltage source VGL, such that the charging unit 130 can charge and discharge the node Q N according to the potential of the charging terminal VST. The voltage stabilizing unit 140 can delay the potential of the output terminal OUT at a low voltage level according to the potential of the input terminal IN4 to prevent the potential of the output terminal OUT from floating.
請參考第2圖,第2圖係為本發明之另一實施例,如第2圖所示之另一實施例為移位暫存單元200,結構大致相似並以相同標號標註,不再另外說明,值得一提的是充電單元230可包含輸入端IN3用以接收時脈訊號CK3,由於充電端VST的起始訊號與時脈訊號CK3的致能期間不相互重疊,因此亦可採用耦接時脈訊號CK3的方式以充電節點QN。相較於移位暫存電路100而言,移位暫存電路200可以節省走線,以達到減少佈局面積的功效。 Please refer to FIG. 2, which is another embodiment of the present invention. Another embodiment shown in FIG. 2 is a shift register unit 200. The structures are substantially similar and labeled with the same reference numerals. It should be noted that the charging unit 230 may include an input terminal IN3 for receiving the clock signal CK3. Since the start signal of the charging terminal VST and the enabling period of the clock signal CK3 do not overlap each other, the coupling may also be adopted. The way of the clock signal CK3 is to charge the node Q N . Compared with the shift register circuit 100, the shift register circuit 200 can save traces to achieve the effect of reducing the layout area.
請參考第2圖,移位暫存單元200之穩壓單元240可電連接時脈訊號CK2並根據輸入端IN4所接收的時脈訊號CK4將輸出端OUT的電位維持在低電壓位準,且時脈訊號CK2係反相於時脈訊號CK4,因此當穩壓單元被導通時,可將輸出端OUT的電位拉低到低電壓位準,用以避免輸出端OUT的電位位準浮動(floating)。 Referring to FIG. 2, the voltage stabilizing unit 240 of the shift register unit 200 can electrically connect the clock signal CK2 and maintain the potential of the output terminal OUT at a low voltage level according to the clock signal CK4 received by the input terminal IN4. The clock signal CK2 is inverted in the clock signal CK4, so when the voltage regulator unit is turned on, the potential of the output terminal OUT can be pulled down to a low voltage level to avoid the potential level floating of the output terminal OUT (floating ).
此外移位暫存單元100中的上拉單元110、輸出單元120、充電單元130及穩壓單元140及移位暫存單元200中的充電單元230及穩壓單元240,亦可以利用開關或者電晶體實現,本說明書僅以N型電晶體為例,然本發明不以此為限,亦可以使用P型電晶體實現所述移位暫存電路。 In addition, the pull-up unit 110, the output unit 120, the charging unit 130, and the voltage stabilizing unit 140 in the shift register unit 100 and the charging unit 230 and the voltage stabilizing unit 240 in the shift register unit 200 can also use switches or electricity. For the implementation of the crystal, the present specification is only an example of an N-type transistor. However, the present invention is not limited thereto, and the shift register circuit can also be implemented using a P-type transistor.
上拉單元110包括電晶體M1、輸出單元120包括電晶體M2、充電單元130包括電晶體M3及穩壓單元140包括電晶體M4,所述每個電晶體均有第一端、第二端以及閘極端。電晶體M1的第一端電連接至訊 號端ING,用以接收來自前級移位暫存單元之輸出訊號GN-1;電晶體M1的閘極端電連接至輸入端IN1,用以接收時脈訊號CK1,電晶體M1的第二端電連接至節點QN。電晶體M2的第一端電連接至輸入端IN2,用以接收時脈訊號CK2,電晶體M2的閘極端電連接至節點QN,電晶體M2的第二端電連接至輸出端OUT,用以輸出輸出訊號GN。電晶體M3的第一端電連接至節點QN,電晶體M3的閘極端電連接至充電端VST用以接收起始訊號,電晶體M3的第二端電連接至低電壓源VGL。電晶體M4的第一端電連接至輸出端OUT,電晶體M4的閘極端電連接至輸入端IN4用以接收時脈訊號CK4,電晶體M4的第二端電連接至低電壓源VGL。於一實施例中,輸出單元120還可包括電容C,電連接於電晶體M2的閘極端與第二端之間,通過使用電容耦接於電晶體之間,節點QN的電壓可儲存於電容,當輸出端OUT的輸出訊號GN須維持在高電壓位準時,不至於太快漏電,起到儲存電荷的功效。 The pull-up unit 110 includes a transistor M1, the output unit 120 includes a transistor M2, the charging unit 130 includes a transistor M3, and the voltage stabilizing unit 140 includes a transistor M4, each of which has a first end, a second end, and The gate is extreme. When the gate terminal of transistor M1 is electrically connected to the input terminal IN1, for receiving; end of a first transistor M1 is electrically connected to the signal terminal ING, for receiving from the preceding-stage shift register cell output signal G N-1 The pulse signal CK1, the second end of the transistor M1 is electrically connected to the node Q N . The first end of the transistor M2 is electrically connected to the input terminal IN2 for receiving the clock signal CK2, the gate terminal of the transistor M2 is electrically connected to the node Q N , and the second end of the transistor M2 is electrically connected to the output terminal OUT. To output the output signal G N . The first end of the transistor M3 is electrically connected to the node Q N , the gate terminal of the transistor M3 is electrically connected to the charging terminal VST for receiving the start signal, and the second end of the transistor M3 is electrically connected to the low voltage source VGL. The first end of the transistor M4 is electrically connected to the output terminal OUT, the gate terminal of the transistor M4 is electrically connected to the input terminal IN4 for receiving the clock signal CK4, and the second end of the transistor M4 is electrically connected to the low voltage source VGL. In an embodiment, the output unit 120 may further include a capacitor C electrically connected between the gate terminal and the second terminal of the transistor M2. The capacitor is coupled between the transistors by using a capacitor, and the voltage of the node Q N can be stored in the capacitor. Capacitor, when the output signal G N of the output terminal OUT must be maintained at a high voltage level, it will not leak too fast, and it can store the charge.
於另一實施例中,充電單元230包括電晶體M3及穩壓單元240包括電晶體M4,且電晶體M3的第二端可電連接至時脈訊號CK3,這是由於當電晶體M3位於導通狀態時,可以通過位於低電壓位準的時脈訊號CK3來下拉節點QN的電壓。電晶體M4的第二端電連接至時脈訊號CK2,這是由於當電晶體M4被導通時,可以通過位於低電壓位準的時脈訊號CK2來維持輸出端OUT的輸出訊號GN的電壓位準,不使輸出訊號GN浮動。 In another embodiment, the charging unit 230 includes a transistor M3 and the voltage stabilizing unit 240 includes a transistor M4, and the second end of the transistor M3 is electrically connected to the clock signal CK3 because the transistor M3 is turned on. In the state, the voltage of the node Q N can be pulled down by the clock signal CK3 at the low voltage level. The second end of the transistor M4 is electrically connected to the clock signal CK2. When the transistor M4 is turned on, the voltage of the output signal G N of the output terminal OUT can be maintained by the clock signal CK2 at the low voltage level. The level does not cause the output signal G N to float.
請參考第3圖,第3圖係為移位暫存電路300的電路圖,結構大致相似並以相同標號標註,不再另外說明,值得一提的是充電單元330的電晶體M3的第二端是連接至電晶體M3的閘極端,這是由於當畫面期間起始時,時脈訊號均尚未被致能,此時第1級或第2級的移位暫存單元 300中的電晶體M3可通過二極體連接的方式連接以達到對節點QN充電的功效。 Please refer to FIG. 3, which is a circuit diagram of the shift register circuit 300. The structures are substantially similar and labeled with the same reference numerals, and will not be further described. It is worth mentioning that the second end of the transistor M3 of the charging unit 330 is not mentioned. Is connected to the gate terminal of the transistor M3, because the clock signal has not been enabled at the beginning of the picture period, at this time, the transistor M3 in the shift register unit 300 of the first or second stage It can be connected by a diode connection to achieve the function of charging the node Q N .
為能清楚地說明本發明之移位暫存器的特色及優點,請搭配上述移位暫存電路之電路圖參考第4圖,第4圖係為移位暫存電路100、200及300之訊號波形圖。其中起始訊號係為每個畫面期間(frame)的同步訊號Vsync,所述時脈訊號CK1、時脈訊號CK2、時脈訊號CK3、時脈訊號CK4的初始致能時間均晚於起始訊號,時脈訊號CK4與時脈訊號CK2互為反相且時脈訊號CK4的初始相位較時脈訊號CK2延遲180度,時脈訊號CK1與時脈訊號CK3互為反相且時脈訊號CK1的初始相位較時脈訊號CK3延遲180度,時脈訊號CK1的初始相位較時脈訊號CK2延遲270度。所述的初始相位指的是畫面期間開始時時脈訊號最早被致能的相位時間。 In order to clearly illustrate the features and advantages of the shift register of the present invention, please refer to FIG. 4 for the circuit diagram of the shift register circuit, and FIG. 4 is the signal of the shift register circuits 100, 200 and 300. Waveform diagram. The initial signal is the synchronization signal Vsync of each frame period, and the initial activation time of the clock signal CK1, the clock signal CK2, the clock signal CK3, and the clock signal CK4 is later than the start signal. The clock signal CK4 and the clock signal CK2 are mutually inverted, and the initial phase of the clock signal CK4 is delayed by 180 degrees from the clock signal CK2, and the clock signal CK1 and the clock signal CK3 are mutually inverted and the clock signal CK1 is The initial phase is delayed by 180 degrees from the clock signal CK3, and the initial phase of the clock signal CK1 is delayed by 270 degrees from the clock signal CK2. The initial phase refers to the phase time at which the clock signal is first enabled at the beginning of the picture period.
以第1級的移位暫存電路300為例,於時間區間T1內,電晶體M3接收來自充電端VST的起始訊號以導通,其餘電晶體M1、M2、M4此時位於截止狀態,電晶體M3開始對節點QN充電;於時間區間T2內,電晶體M3持續對節點QN充電,節點QN位於高電壓位準且電晶體M2的第一端接收時脈訊號CK2使得電晶體M2導通並輸出輸出訊號GN,電晶體M1、M4則位於截止狀態;於時間區間T3內,電晶體M1、M3、M4處於截止狀態,電晶體M2持續導通並輸出輸出訊號GN;於時間區間T4內,時脈訊號CK2禁能且時脈訊號CK4被致能使得電晶體M4導通,其餘電晶體M1、M2、M3處於截止狀態,此時電晶體M4的功能就是維持輸出訊號GN的電壓位於低電壓位準,避免訊號浮動。 Taking the shift register circuit 300 of the first stage as an example, in the time interval T1, the transistor M3 receives the start signal from the charging terminal VST to be turned on, and the remaining transistors M1, M2, and M4 are in the off state at this time. crystal M3 starts charging node Q N; in the time interval T2, transistors M3 continued charging node Q N, Q N nodes located at the first end for receiving a high voltage level and the transistor M2 is such that the clock signal CK2 transistor M2 Turning on and outputting the output signal G N , the transistors M1 and M4 are in the off state; in the time interval T3, the transistors M1, M3, and M4 are in the off state, and the transistor M2 is continuously turned on and outputting the output signal G N in the time interval. In T4, the clock signal CK2 is disabled and the clock signal CK4 is enabled to turn on the transistor M4, and the remaining transistors M1, M2, and M3 are in an off state. At this time, the function of the transistor M4 is to maintain the voltage of the output signal G N . Located at a low voltage level to avoid signal floating.
以第N級的移位暫存電路200為例,於時間區間T1內,電晶 體M1接收來自前一級的訊號端ING的GN-1訊號以導通,其餘電晶體M2、M3、M4此時位於截止狀態,電晶體M1開始對節點QN充電;於時間區間T2內,電晶體M1持續對節點QN充電,節點QN位於高電壓位準且電晶體M2的第一端接收時脈訊號CK2使得電晶體M2導通並輸出輸出訊號GN,電晶體M4則位於截止狀態;於時間區間T3內,電晶體M1、M3、M4處於截止狀態,電晶體M2持續導通並輸出輸出訊號GN;於時間區間T4內,時脈訊號CK2禁能且時脈訊號CK4被致能使得電晶體M4導通,其餘電晶體M1、M2、M3處於截止狀態,此時電晶體M4的功能就是維持輸出訊號GN的電壓位於低電壓位準,避免訊號浮動。 Taking the shift register circuit 200 of the Nth stage as an example, in the time interval T1, the transistor M1 receives the G N-1 signal from the signal terminal ING of the previous stage to be turned on, and the remaining transistors M2, M3, and M4 are at this time. In the off state, the transistor M1 starts to charge the node Q N ; in the time interval T2, the transistor M1 continues to charge the node Q N , the node Q N is at the high voltage level and the first end of the transistor M2 receives the clock signal CK2 turns on the transistor M2 and outputs the output signal G N , and the transistor M4 is in the off state; in the time interval T3 , the transistors M1 , M3 , M4 are in the off state , the transistor M2 is continuously turned on and outputs the output signal G N ; During the time interval T4, the clock signal CK2 is disabled and the clock signal CK4 is enabled to turn on the transistor M4, and the remaining transistors M1, M2, and M3 are in an off state. At this time, the function of the transistor M4 is to maintain the output signal G. The voltage of N is at a low voltage level to avoid signal floating.
綜上所述,透過本發明實施例之移位暫存電路,通過時脈訊號CK1、CK2、CK3、及CK4驅動所述之移位暫存電路,達到降低訊號走線的功效以降低佈局面積,可提升顯示器開口率或者降低週邊區面積,此外還可抑制電晶體持續耦接至直流電壓源而造成之偏壓效應(Threshold voltage offset)。 In summary, the shift temporary storage circuit of the embodiment of the present invention drives the shift temporary storage circuit through the clock signals CK1, CK2, CK3, and CK4 to reduce the effect of the signal trace to reduce the layout area. It can increase the aperture ratio of the display or reduce the area of the peripheral area, and can also suppress the threshold voltage offset caused by the continuous coupling of the transistor to the DC voltage source.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
100‧‧‧移位暫存電路 100‧‧‧Shift register circuit
110‧‧‧上拉單元 110‧‧‧Upper pull unit
120‧‧‧輸出單元 120‧‧‧Output unit
130‧‧‧充電單元 130‧‧‧Charging unit
140‧‧‧穩壓單元 140‧‧‧Stabilizer
M1、M2、M3、M4‧‧‧電晶體 M1, M2, M3, M4‧‧‧ transistors
C‧‧‧電容 C‧‧‧ capacitor
IN1、IN2、IN4‧‧‧輸入端 IN1, IN2, IN4‧‧‧ input
OUT‧‧‧輸出端 OUT‧‧‧ output
ING‧‧‧訊號端 ING‧‧‧ signal end
VST‧‧‧充電端 VST‧‧‧Charging end
CK1、CK2、CK4‧‧‧時脈訊號 CK1, CK2, CK4‧‧‧ clock signal
GN、GN-1‧‧‧輸出訊號 G N , G N-1 ‧‧‧ output signal
VGL‧‧‧電壓源 VGL‧‧‧ voltage source
QN‧‧‧節點 Q N ‧‧‧ nodes
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| TWI890476B (en) * | 2024-06-07 | 2025-07-11 | 友達光電股份有限公司 | Gate driving circuit and display panel |
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| TWI563487B (en) * | 2015-12-24 | 2016-12-21 | Au Optronics Corp | Shift register circuit |
| CN107134267B (en) * | 2017-05-27 | 2018-07-13 | 惠科股份有限公司 | Shift register circuit and display panel using same |
| CN110503927B (en) | 2018-05-16 | 2020-11-10 | 京东方科技集团股份有限公司 | Shifting register unit and driving method thereof, grid driving circuit and display device |
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| CN103594118B (en) * | 2012-08-17 | 2016-09-07 | 瀚宇彩晶股份有限公司 | Liquid crystal display and its bidirectional shift register device |
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