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TW201635089A - Portable electronic device and light sensing package thereof - Google Patents

Portable electronic device and light sensing package thereof Download PDF

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Publication number
TW201635089A
TW201635089A TW104109019A TW104109019A TW201635089A TW 201635089 A TW201635089 A TW 201635089A TW 104109019 A TW104109019 A TW 104109019A TW 104109019 A TW104109019 A TW 104109019A TW 201635089 A TW201635089 A TW 201635089A
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Taiwan
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sensing
light
wafer
region
area
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TW104109019A
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Chinese (zh)
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黃振昌
詹前奎
梁育誌
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力智電子股份有限公司
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Priority to TW104109019A priority Critical patent/TW201635089A/en
Priority to CN201510188987.9A priority patent/CN106159026A/en
Publication of TW201635089A publication Critical patent/TW201635089A/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • H10F77/407Optical elements or arrangements indirectly associated with the devices

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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)

Abstract

本發明揭露一種可攜式電子裝置,包括殼體、蓋體及光感測封裝體。蓋體設置於殼體上。蓋體具有第一透光區域與第二透光區域。光感測封裝體設置於殼體中。光感測封裝體包括第一晶片、第二晶片及阻隔部。第一晶片提供一光源。第二晶片具有第一感測區及第二感測區。第一感測區提供一環境光感測訊號,第二感測區提供一近接感測訊號。第二感測區位於第一晶片與第一感測區之間。阻隔部設置於第一晶片與第二晶片之間。第一感測區位於第一透光區域之下。第一晶片與第二感測區位於第二透光區域之下。 The invention discloses a portable electronic device, which comprises a housing, a cover and a light sensing package. The cover body is disposed on the housing. The cover has a first light transmissive area and a second light transmissive area. The light sensing package is disposed in the housing. The light sensing package includes a first wafer, a second wafer, and a blocking portion. The first wafer provides a light source. The second wafer has a first sensing region and a second sensing region. The first sensing area provides an ambient light sensing signal, and the second sensing area provides a proximity sensing signal. The second sensing region is located between the first wafer and the first sensing region. The blocking portion is disposed between the first wafer and the second wafer. The first sensing region is located below the first light transmissive region. The first wafer and the second sensing region are located below the second light transmissive region.

Description

可攜式電子裝置及其光感測封裝體 Portable electronic device and light sensing package thereof

本發明與光感測有關,特別是關於一種能夠增大環境光感測的視野(Field Of View,FOV)角度及可見光穿透率的可攜式電子裝置及其光感測封裝體。 The present invention relates to light sensing, and more particularly to a portable electronic device capable of increasing a field of view (FOV) angle and visible light transmittance and a light sensing package thereof.

近年來,隨著光感測技術之進步,逐漸發展出各種具有不同功能的光感測器,例如環境光感測器(Ambient Light Sensor,ALS)及近接感測器(Proximity Sensor,PS)等,並已廣泛地應用於筆電、平板電腦及智慧型手機等可攜式電子裝置。 In recent years, with the advancement of optical sensing technology, various light sensors with different functions, such as Ambient Light Sensor (ALS) and Proximity Sensor (PS), have been gradually developed. And has been widely used in portable electronic devices such as notebooks, tablets and smart phones.

然而,如圖1所示,由於市面上常見的光感測封裝體1大多採用雙透光孔(包括光發射透光孔及光感測透光孔)的設計,導致位於光感測透光孔之下的環境光及近接感測器晶片10面臨光感測的視野(FOV)角度過小的問題。一旦將光感測封裝體1應用於可攜式電子裝置時,環境光及近接感測器晶片10所感測到的環境光的亮度變化明顯不同於人眼實際感受到的環境光的亮度變化。 However, as shown in FIG. 1 , since the common light sensing package 1 on the market mostly adopts a design of double light transmission holes (including a light emitting light transmission hole and a light sensing light transmission hole), it is located in the light sensing light transmission hole. The underlying ambient light and proximity sensor wafer 10 are subject to the problem that the field of view (FOV) of the light sensing is too small. Once the light sensing package 1 is applied to a portable electronic device, the ambient light and the brightness variation of the ambient light sensed by the proximity sensor wafer 10 are significantly different from the brightness changes of the ambient light actually perceived by the human eye.

再者,如圖2所示,若光感測封裝體2還額外設置有一層黑膠套24,則會導致位於光感測透光孔之下的環境光及近接感測器晶片20接收光線的視野角度變得比圖1更小。此外,由於環境光及近接感測器晶片20進行近接感測時亦需接收紅外光,所以位於環境光及近接感測器晶片20之上的光感測透光孔亦需設置有紅外光穿透膜,導致環境光及近接感測器晶片20所感測到的可見光亮度會受紅外光穿透膜的影響而大幅衰減。 Furthermore, as shown in FIG. 2, if the photo-sensing package 2 is additionally provided with a black rubber sleeve 24, the ambient light under the light-sensing light-transmitting aperture and the proximity sensor wafer 20 receive light. The angle of view becomes smaller than that of Figure 1. In addition, since the ambient light and the proximity sensor chip 20 also need to receive infrared light when performing proximity sensing, the light sensing light transmission holes located on the ambient light and the proximity sensor chip 20 also need to be provided with infrared light. Through the film, the ambient light and the brightness of the visible light sensed by the proximity sensor wafer 20 are greatly attenuated by the influence of the infrared light penetrating the film.

有鑑於此,本發明提供一種能夠增大環境光感測的視野角度及可見光穿透率的可攜式電子裝置及其光感測封裝體,以解決先前技術所述及的問題。 In view of the above, the present invention provides a portable electronic device capable of increasing the viewing angle and visible light transmittance of ambient light sensing and a light sensing package thereof to solve the problems described in the prior art.

本發明之一較佳具體實施例為一種光感測封裝體。於此實施例中,光感測封裝體設置於殼體中。殼體具有第一透光區域與第二透光區域。光感測封裝體包括第一晶片、第二晶片及第一阻隔部。第一晶片提供一光源。第二晶片具有第一感測區及第二感測區。第一感測區提供一環境光感測訊號,第二感測區提供一近接感測訊號。第二感測區位於第一晶片與第一感測區之間。第一阻隔部設置於第一晶片與第二晶片之間。第一感測區位於第一透光區域之下,第一晶片與第二感測區位於第二透光區域之下。 A preferred embodiment of the present invention is a light sensing package. In this embodiment, the light sensing package is disposed in the housing. The housing has a first light transmissive area and a second light transmissive area. The light sensing package includes a first wafer, a second wafer, and a first blocking portion. The first wafer provides a light source. The second wafer has a first sensing region and a second sensing region. The first sensing area provides an ambient light sensing signal, and the second sensing area provides a proximity sensing signal. The second sensing region is located between the first wafer and the first sensing region. The first blocking portion is disposed between the first wafer and the second wafer. The first sensing region is located below the first light transmitting region, and the first wafer and the second sensing region are located below the second light transmitting region.

在本發明之一實施例中,第二透光區域為一類圓形狀,且其直徑小於2mm。 In an embodiment of the invention, the second light transmissive region is of a circular shape and has a diameter of less than 2 mm.

在本發明之一實施例中,第一感測區與第二感測區之間具有第一距離且第二感測區與第一晶片之間具有第二距離,第一距離大於第二距離。 In an embodiment of the invention, the first sensing area and the second sensing area have a first distance and the second sensing area and the first wafer have a second distance, the first distance is greater than the second distance .

在本發明之一實施例中,第二感測區之一側至第一晶片之一側之間具有第三距離,第三距離小於2mm。 In an embodiment of the invention, the one side of the second sensing region has a third distance to one side of the first wafer, and the third distance is less than 2 mm.

在本發明之一實施例中,第二透光區域設置有第一薄膜,以濾除其他非紅外光波長的光。 In an embodiment of the invention, the second light transmissive region is provided with a first film to filter out light of other non-infrared light wavelengths.

在本發明之一實施例中,第一透光區域設置有第二薄膜,以增進環境光的通過。 In an embodiment of the invention, the first light transmissive region is provided with a second film to enhance the passage of ambient light.

在本發明之一實施例中,光感測封裝體還包括第二阻隔部。第二阻隔部設置於第二晶片上且位於第一感測區與第二感測區之間。 In an embodiment of the invention, the light sensing package further includes a second blocking portion. The second blocking portion is disposed on the second wafer and located between the first sensing region and the second sensing region.

本發明之另一較佳具體實施例為一種可攜式電子裝置。於此實施例中,可攜式電子裝置包括殼體、蓋體及光感測封裝體。蓋體設置於殼體上。蓋體具有第一透光區域與第二透光區域。光感測封裝體設置於殼體中。光感測封裝體包括第一晶片、第二晶片及阻隔部。第一晶片提供 一光源。第二晶片具有第一感測區及第二感測區。第一感測區提供一環境光感測訊號,第二感測區提供一近接感測訊號。第二感測區位於第一晶片與第一感測區之間。阻隔部設置於第一晶片與第二晶片之間。第一感測區位於第一透光區域之下,第一晶片與第二感測區位於第二透光區域之下。 Another preferred embodiment of the present invention is a portable electronic device. In this embodiment, the portable electronic device includes a housing, a cover, and a light sensing package. The cover body is disposed on the housing. The cover has a first light transmissive area and a second light transmissive area. The light sensing package is disposed in the housing. The light sensing package includes a first wafer, a second wafer, and a blocking portion. First wafer supply a light source. The second wafer has a first sensing region and a second sensing region. The first sensing area provides an ambient light sensing signal, and the second sensing area provides a proximity sensing signal. The second sensing region is located between the first wafer and the first sensing region. The blocking portion is disposed between the first wafer and the second wafer. The first sensing region is located below the first light transmitting region, and the first wafer and the second sensing region are located below the second light transmitting region.

相較於先前技術,根據本發明的可攜式電子裝置及其光感測封裝體是將設置於同一光感測晶片上的環境光感測器與近接感測器彼此分隔開一段距離,藉以增大只對應於環境光感測器的獨立透光孔,以增大其視野角度,並且此獨立透光孔並不位於表面玻璃上所設置的紅外光穿透膜之下,故不會受到紅外光穿透膜的影響,可有效增進可見光穿透率,使得環境光感測器所感測到的環境光亮度變化能更符合人眼實際感受到的環境光亮度變化。 Compared with the prior art, the portable electronic device and the light sensing package thereof according to the present invention separate the ambient light sensor and the proximity sensor disposed on the same light sensing wafer from each other by a distance. Therefore, the independent light-transmitting hole corresponding only to the ambient light sensor is increased to increase the viewing angle thereof, and the independent light-transmitting hole is not located under the infrared light penetrating film disposed on the surface glass, so Under the influence of the infrared light penetrating film, the visible light transmittance can be effectively improved, so that the ambient light brightness change sensed by the ambient light sensor can more closely conform to the ambient light brightness change actually perceived by the human eye.

關於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。 The advantages and spirit of the present invention will be further understood from the following detailed description of the invention.

1~3、7‧‧‧光感測封裝體 1~3, 7‧‧‧Light sensing package

10、20‧‧‧環境光及近接感測器晶片 10, 20‧‧‧ Ambient light and proximity sensor chip

11、21‧‧‧基板 11, 21‧‧‧ substrate

12、22‧‧‧紅外線發光二極體(IR-LED)晶片 12, 22‧‧‧Infrared light-emitting diode (IR-LED) wafer

13、23‧‧‧阻隔部 13, 23‧‧ ‧ barrier

24‧‧‧黑膠套 24‧‧‧Black rubber sleeve

L‧‧‧光線 L‧‧‧Light

30、70‧‧‧第二晶片 30, 70‧‧‧ second chip

31、71‧‧‧基板 31, 71‧‧‧ substrate

32、72‧‧‧第一晶片 32, 72‧‧‧ first chip

33‧‧‧阻隔部 33‧‧‧Barrier

73‧‧‧第一阻隔部 73‧‧‧First barrier

75‧‧‧第二阻隔部 75‧‧‧second barrier

34、74‧‧‧封裝材料 34, 74‧‧‧Encapsulation materials

S1‧‧‧第一感測區 S1‧‧‧First Sensing Area

S2‧‧‧第二感測區 S2‧‧‧Second Sensing Area

L1‧‧‧第一光線 L1‧‧‧First light

L2‧‧‧第二光線 L2‧‧‧second light

L1’‧‧‧近接感測光線 L1’‧‧‧ proximity sensing light

CL1‧‧‧第一透光區域 CL1‧‧‧First light transmission area

CL2‧‧‧第二透光區域 CL2‧‧‧second light transmission area

G‧‧‧表面玻璃 G‧‧‧Surface glass

F1‧‧‧第一薄膜 F1‧‧‧ first film

F2‧‧‧第二薄膜 F2‧‧‧second film

D1、D1’‧‧‧第一感測區與第二感測區之間的距離 D1, D1'‧‧‧distance between the first sensing area and the second sensing area

D2、D2’‧‧‧第二感測區與第一晶片之間的距離 D2, D2'‧‧‧distance between the second sensing region and the first wafer

K‧‧‧直線 K‧‧‧ Straight line

圖1及圖2分別繪示先前技術中具有不同結構的光感測封裝體之示意圖。 1 and 2 are schematic views respectively showing light sensing packages having different structures in the prior art.

圖3及圖4分別繪示根據本發明之一具體實施例的光感測封裝體之剖面圖及上視圖。 3 and 4 are respectively a cross-sectional view and a top view of a light sensing package according to an embodiment of the present invention.

圖5及圖6分別繪示將圖3中之光感測封裝體設置於可攜式電子裝置之表面玻璃下方的上視圖及剖面圖。 5 and FIG. 6 are respectively a top view and a cross-sectional view showing the light sensing package of FIG. 3 disposed under the surface glass of the portable electronic device.

圖7及圖8分別繪示根據本發明之另一具體實施例的光感測封裝體之剖面圖及上視圖。 7 and 8 are respectively a cross-sectional view and a top view of a light sensing package according to another embodiment of the present invention.

圖9及圖10分別繪示將圖7中之光感測封裝體設置於可攜式電子裝置之表面玻璃下方的上視圖及剖面圖。 9 and 10 are respectively a top view and a cross-sectional view showing the light sensing package of FIG. 7 disposed under the surface glass of the portable electronic device.

現在將詳細參考本發明的示範性實施例,並在附圖中說明所述示範性實施例的實例。另外,在圖式及實施方式中所使用相同或 類似標號的元件/構件是用來代表相同或類似部分。 Reference will now be made in detail to the exemplary embodiments embodiments In addition, the same or used in the drawings and embodiments Like elements or components are used to denote the same or similar parts.

根據本發明之一較佳具體實施例為一種光感測封裝體。於此實施例中,此光感測封裝體可包括環境光感測器(ALS)及近接感測器(PS),可應用於筆電、平板電腦及智慧型手機等可攜式電子裝置,但不以此為限。 A preferred embodiment of the invention is a light sensing package. In this embodiment, the light sensing package may include an ambient light sensor (ALS) and a proximity sensor (PS), which can be applied to portable electronic devices such as notebooks, tablets, and smart phones. But not limited to this.

為了有效改善環境光感測器之感光視野角度過小及可見光亮度大幅衰減的問題,此實施例中之光感測封裝體具有下列特徵: In order to effectively improve the problem that the photographic field of view of the ambient light sensor is too small and the brightness of the visible light is greatly attenuated, the light sensing package in this embodiment has the following features:

(1)將位於同一光感測晶片上的環境光感測器與近接感測器分離設置,而不再合而為一,藉此,只對應於環境光感測器的獨立透光孔即不會再受到可攜式電子裝置之表面玻璃所鍍上的紅外光穿透膜的影響,故能有效避免可見光亮度大幅衰減之情事發生。 (1) Separating the ambient light sensor on the same light sensing chip from the proximity sensor, and not combining it, thereby corresponding to the independent light transmission hole of the ambient light sensor. It is no longer affected by the infrared light penetrating film coated on the surface glass of the portable electronic device, so it can effectively avoid the occurrence of a large attenuation of visible light brightness.

(2)加大環境光感測器的感光孔徑,藉此,環境光感測器之感光視野角度亦隨之變大,故可更加貼近使用者的眼睛所感受到的亮度變化情形。 (2) Increasing the photosensitive aperture of the ambient light sensor, whereby the sensitized viewing angle of the ambient light sensor is also increased, so that the brightness variation felt by the user's eyes can be closer.

請參照圖3及圖4,圖3及圖4分別繪示根據本發明之一具體實施例的光感測封裝體之剖面圖及上視圖。需說明的是,由圖3及圖4可知:此實施例中之光感測封裝體3具有雙透光孔的封裝結構,但不以此為限。 Please refer to FIG. 3 and FIG. 4 , which are respectively a cross-sectional view and a top view of a light sensing package according to an embodiment of the invention. It should be noted that, as shown in FIG. 3 and FIG. 4, the light sensing package 3 in this embodiment has a package structure with double light transmission holes, but is not limited thereto.

如圖3所示,光感測封裝體3包括基板31、第一晶片32、第二晶片30、阻隔部33及封裝材料34。第一晶片32為紅外線發光二極體(IR-LED)晶片,用以發出紅外光線L1;第二晶片30為兼具環境光感測功能及近接感測功能的光感測晶片,第二晶片30具有彼此分離設置的第一感測區S1及第二感測區S2,且第二感測區S2位於第一晶片32與第一感測區S1之間,其中第一晶片32輸出的光線可經由一物體(例如:人臉)反射到第二感測區S2,第二感測區S2接收其反射後的光源能量,而第一感測區S1可接收環境光。藉此,第一感測區S1用以接收可見光線L2並提供一環境光感測訊號且第二感測區S2用以接收紅外光線L1’並提供一近接感測訊號;基板31用以承載第一晶片32、第二晶片30、阻隔部33及封裝材料34,其構成材料之種類並無特定之限制;阻隔部33是由不透光材料構成;封裝材 料34可以是透光材料,例如樹脂,但不以此為限。 As shown in FIG. 3, the light sensing package 3 includes a substrate 31, a first wafer 32, a second wafer 30, a barrier portion 33, and an encapsulation material 34. The first chip 32 is an infrared light emitting diode (IR-LED) chip for emitting infrared light L1; the second chip 30 is a light sensing chip having an ambient light sensing function and a proximity sensing function, and the second chip The first sensing region S1 and the second sensing region S2 are disposed apart from each other, and the second sensing region S2 is located between the first wafer 32 and the first sensing region S1, wherein the light output by the first wafer 32 is The second sensing region S2 can receive the reflected light source energy through an object (for example, a human face), and the first sensing region S1 can receive the ambient light. The first sensing area S1 is configured to receive the visible light line L2 and provide an ambient light sensing signal, and the second sensing area S2 is configured to receive the infrared light L1 ′ and provide a proximity sensing signal; the substrate 31 is configured to carry The first wafer 32, the second wafer 30, the barrier portion 33, and the encapsulating material 34 are not particularly limited in the kind of constituent materials; the blocking portion 33 is made of an opaque material; The material 34 may be a light transmissive material such as a resin, but is not limited thereto.

於此實施例中,第一晶片32與第二晶片30均設置於基板31上且彼此分離;阻隔部33亦設置於基板31上且位於第一晶片32與第二晶片30之間;封裝材料34形成於基板31、第一晶片32及第二晶片30上,以包覆第一晶片32及第二晶片30。 In this embodiment, the first wafer 32 and the second wafer 30 are both disposed on the substrate 31 and separated from each other; the blocking portion 33 is also disposed on the substrate 31 and located between the first wafer 32 and the second wafer 30; 34 is formed on the substrate 31, the first wafer 32, and the second wafer 30 to cover the first wafer 32 and the second wafer 30.

需說明的是,假設第二晶片30上的第一感測區S1與第二感測區S2之間的距離為D1且第二晶片30上的第二感測區S2與第一晶片32之間的距離為D2,則D1會大於D2。這代表第二晶片30上接收紅外光線L1’的第二感測區S2會較靠近發出紅外光線L1的第一晶片32,並且第二感測區S2會較為遠離第二晶片30上接收可見光線L2的第一感測區S1。於一實施例中,D1可以是D2的兩倍或兩倍以上,但不以此為限。 It should be noted that it is assumed that the distance between the first sensing region S1 and the second sensing region S2 on the second wafer 30 is D1 and the second sensing region S2 on the second wafer 30 and the first wafer 32 are The distance between them is D2, then D1 will be greater than D2. This means that the second sensing region S2 on the second wafer 30 receiving the infrared light L1' will be closer to the first wafer 32 emitting the infrared light L1, and the second sensing region S2 will be farther away from the second wafer 30. The first sensing region S1 of L2. In an embodiment, D1 may be twice or more than D2, but is not limited thereto.

如圖4所示,光感測封裝體3具有雙透光孔的封裝結構,第二晶片30上的第一感測區S1與第二感測區S2分別位於左側較大的透光孔下方且彼此分離設置;第一晶片32則位於右側較小的透光孔下方;第一晶片32的中心、第一感測區S1的中心及第二感測區S2的中心均會位於同一直線K上;第一感測區S1與第二感測區S2之間的距離D1大於第二感測區S2與第一晶片32之間的距離D2;第二感測區S2的左側至第一晶片32的右側之間的距離小於2mm,較佳為1.2~1.5mm,但不以此為限。 As shown in FIG. 4, the light sensing package 3 has a package structure with double light transmission holes, and the first sensing area S1 and the second sensing area S2 on the second wafer 30 are respectively located under the large transparent holes on the left side. And disposed separately from each other; the first wafer 32 is located under the smaller light transmission hole on the right side; the center of the first wafer 32, the center of the first sensing region S1, and the center of the second sensing region S2 are all located on the same straight line K. The distance D1 between the first sensing region S1 and the second sensing region S2 is greater than the distance D2 between the second sensing region S2 and the first wafer 32; the left side of the second sensing region S2 to the first wafer The distance between the right sides of 32 is less than 2 mm, preferably 1.2 to 1.5 mm, but not limited thereto.

於一實施例中,可攜式電子裝置還包括有殼體及蓋體,且蓋體設置於殼體上。上述的光感測封裝體設置於殼體中且位於蓋體之下。實際上,可攜式電子裝置的殼體可以是常見的金屬或塑膠殼體,並無特定的限制。 In one embodiment, the portable electronic device further includes a housing and a cover, and the cover is disposed on the housing. The light sensing package described above is disposed in the housing and under the cover. In fact, the housing of the portable electronic device may be a common metal or plastic housing without particular limitation.

需說明的是,可攜式電子裝置的蓋體可以是一表面玻璃,並且表面玻璃至少具有兩透光區域及一顯示區域,且顯示區域為可透光的,但不以此為限。至於表面玻璃的其他周邊區域大多是不透光的,即使有部份透光,其透光率也會低於30%。 It should be noted that the cover of the portable electronic device may be a surface glass, and the surface glass has at least two transparent areas and a display area, and the display area is permeable to light, but not limited thereto. As for the other peripheral areas of the surface glass, most of them are opaque, and even if there is partial light transmission, the light transmittance is less than 30%.

接著,請參照圖5及圖6,圖5及圖6分別繪示將圖3中之光感測封裝體設置於可攜式電子裝置的表面玻璃之下的上視圖及剖面圖。如圖5及圖6所示,表面玻璃G具有第一透光區域CL1及第二透光區域 CL2。第二晶片30的第一感測區S1位於表面玻璃G的第一透光區域CL1之下,亦即表面玻璃G的第一透光區域CL1垂直投影於第二晶片30的第一感測區S1;第二晶片30的第二感測區S2及第一晶片32位於表面玻璃G的第二透光區域CL2之下,亦即表面玻璃G的第二透光區域CL2垂直投影於第二晶片30的第二感測區S2及第一晶片32。 5 and FIG. 6 , FIG. 5 and FIG. 6 respectively show a top view and a cross-sectional view of the light sensing package of FIG. 3 disposed under the surface glass of the portable electronic device. As shown in FIG. 5 and FIG. 6, the surface glass G has a first light transmissive area CL1 and a second light transmissive area. CL2. The first sensing region S1 of the second wafer 30 is located below the first light-transmissive region CL1 of the surface glass G, that is, the first light-transmitting region CL1 of the surface glass G is vertically projected on the first sensing region of the second wafer 30. S1; the second sensing region S2 of the second wafer 30 and the first wafer 32 are located under the second transparent region CL2 of the surface glass G, that is, the second transparent region CL2 of the surface glass G is vertically projected on the second wafer. The second sensing region S2 of 30 and the first wafer 32.

需說明的是,表面玻璃G的第一透光區域CL1的形狀至少要能涵蓋其下方的第二晶片30的第一感測區S1。於一實施例中,表面玻璃G的第一透光區域CL1的形狀可以是一類圓形狀,例如圓形、橢圓形、接近長方形的長橢圓形等。至於圖6中之表面玻璃G除了第一透光區域CL1及第二透光區域CL2外的斜線區域即為不透光區域,即使有部份透光,其透光率也會低於30%。 It should be noted that the shape of the first light-transmissive area CL1 of the surface glass G should at least cover the first sensing area S1 of the second wafer 30 below it. In an embodiment, the shape of the first light-transmissive area CL1 of the surface glass G may be a circular shape, such as a circular shape, an elliptical shape, an oblong shape close to a rectangular shape, or the like. As for the surface glass G in FIG. 6 except for the first light-transmitting region CL1 and the second light-transmitting region CL2, the oblique region is an opaque region, and even if there is partial light transmission, the light transmittance is less than 30%. .

實際上,表面玻璃G的第一透光區域CL1可設置有第一薄膜F1,例如可見光穿透膜,以增進環境光的通過。於一實施例中,第一薄膜F1設置於表面玻璃G的第一透光區域CL1的下表面,但不以此為限。當然,表面玻璃G的第一透光區域CL1亦可不設置薄膜,並無特定之限制。 In fact, the first light-transmitting region CL1 of the surface glass G may be provided with a first film F1, such as a visible light penetrating film, to enhance the passage of ambient light. In one embodiment, the first film F1 is disposed on the lower surface of the first light-transmissive region CL1 of the surface glass G, but is not limited thereto. Of course, the first light-transmitting region CL1 of the surface glass G may not be provided with a film, and is not particularly limited.

至於表面玻璃G的第二透光區域CL2的形狀至少要能涵蓋其下方的第二晶片30的第二感測區S2及第一晶片32。於一實施例中,表面玻璃G的第二透光區域CL2的形狀可為一類圓形狀,例如圓形、橢圓形、接近長方形的長橢圓形等,且其直徑小於2mm,但不以此為限。 As for the shape of the second light-transmissive region CL2 of the surface glass G, at least the second sensing region S2 of the second wafer 30 and the first wafer 32 below it can be covered. In an embodiment, the shape of the second light-transmissive region CL2 of the surface glass G may be a circular shape, such as a circular shape, an elliptical shape, a long oval shape close to a rectangular shape, etc., and the diameter thereof is less than 2 mm, but not limit.

實際上,表面玻璃G的第二透光區域CL2可設置有第二薄膜F2,例如紅外光穿透膜,以濾除其他非紅外光波長的光。於一實施例中,第二薄膜F2設置於表面玻璃G的第二透光區域CL2的下表面,但不以此為限。 In fact, the second light-transmissive region CL2 of the surface glass G may be provided with a second film F2, such as an infrared light penetrating film, to filter out light of other non-infrared light wavelengths. In one embodiment, the second film F2 is disposed on the lower surface of the second light-transmissive region CL2 of the surface glass G, but is not limited thereto.

需說明的是,由於設置有紅外光穿透膜的第二透光區域CL2並未垂直投影於接收可見光的第二晶片30的第一感測區S1,使得第一感測區S1接收可見光時較不會受到第二透光區域CL2上所設置的紅外光穿透膜的影響,故能有效提升可見光的穿透率。 It should be noted that, since the second light-transmitting region CL2 provided with the infrared light-transmitting film is not vertically projected on the first sensing region S1 of the second wafer 30 that receives visible light, so that the first sensing region S1 receives visible light It is less affected by the infrared light penetrating film provided on the second light-transmitting region CL2, so that the transmittance of visible light can be effectively improved.

此外,由於發射紅外光線L1的第一晶片32與接收紅外光線L1’的第二感測區S2彼此相鄰設置且均位於表面玻璃G的第二透光區域CL2 之下,亦即進行近接感測功能的第一晶片32與第二感測區S2位於表面玻璃G的同一個小透光孔(第二透光區域CL2)之下。當使用者操作可攜式電子裝置時,從可攜式電子裝置的外觀上只能稍微看到表面玻璃G的一小透光孔(第二透光區域CL2),而較困難看到表面玻璃G的第一透光區域CL1。 Further, since the first wafer 32 emitting the infrared ray L1 and the second sensing region S2 receiving the infrared ray L1' are disposed adjacent to each other and are both located in the second light-transmitting region CL2 of the surface glass G Below, that is, the first wafer 32 and the second sensing region S2 performing the proximity sensing function are located under the same small light-transmissive hole (second light-transmitting region CL2) of the surface glass G. When the user operates the portable electronic device, only a small light-transmissive hole (the second light-transmitting region CL2) of the surface glass G can be slightly seen from the appearance of the portable electronic device, and the surface glass is more difficult to see. The first light transmitting region CL1 of G.

舉例而言,假設設置於表面玻璃G的第一透光區域CL1上的可見光穿透膜對光波長550nm的穿透率為50%,設置於表面玻璃G的第二透光區域CL2上的紅外光穿透膜對光波長550nm的穿透率為20%且對光波長940nm的穿透率為85%。 For example, it is assumed that the transmittance of the visible light transmissive film disposed on the first light-transmissive region CL1 of the surface glass G to the light wavelength of 550 nm is 50%, and the infrared light disposed on the second light-transmitting region CL2 of the surface glass G is infrared. The light transmissive film has a transmittance of 20% for a light wavelength of 550 nm and a transmittance of 85% for a light wavelength of 940 nm.

當可見光L2穿過設置於表面玻璃G的第一透光區域CL1上的可見光穿透膜並射至第二晶片30的第一感測區S1時,第一感測區S1可感測到的光線亮度約為可見光L2之亮度的50%,並且可得到比先前技術更大的視野角度及更高的可見光穿透率。 When the visible light L2 passes through the visible light penetrating film disposed on the first light transmitting region CL1 of the surface glass G and is incident on the first sensing region S1 of the second wafer 30, the first sensing region S1 can be sensed. The brightness of the light is about 50% of the brightness of the visible light L2, and a larger viewing angle and higher visible light transmittance than the prior art can be obtained.

當第一晶片32發出的紅外光線L1經物體反射而穿過設置於表面玻璃G的第二透光區域CL2上的紅外光穿透膜射出並被反射為紅外光線L1’穿過紅外光穿透膜射至第二晶片30的第二感測區S2時,第二感測區S2可感測到的光線能量約為紅外光線L1之能量的72.25%。 When the infrared light L1 emitted from the first wafer 32 is reflected by the object and passes through the infrared light penetrating film disposed on the second light transmitting area CL2 of the surface glass G, it is reflected and reflected as infrared light L1' penetrates through the infrared light. When the film is incident on the second sensing region S2 of the second wafer 30, the light energy sensed by the second sensing region S2 is about 72.25% of the energy of the infrared light L1.

接著,請參照圖7及圖8,圖7及圖8分別繪示根據本發明之另一具體實施例的光感測封裝體之剖面圖及上視圖。需說明的是,由圖7及圖8可知:不同於前述實施例中之光感測封裝體3具有雙透光孔的封裝結構,此實施例中之光感測封裝體7具有三透光孔的封裝結構,但不以此為限。 7 and FIG. 8 respectively illustrate a cross-sectional view and a top view of a light sensing package according to another embodiment of the present invention. It should be noted that, as shown in FIG. 7 and FIG. 8 , the light sensing package 3 in the foregoing embodiment has a package structure with double light transmission holes, and the light sensing package 7 in this embodiment has three light transmissions. The package structure of the hole, but not limited to this.

如圖7所示,光感測封裝體7包括基板71、第一晶片72、第二晶片70、第一阻隔部73、第二阻隔部75及封裝材料74。此實施例中之光感測封裝體7與前述實施例中之光感測封裝體3不同之處在於:光感測封裝體7還包括第二阻隔部75,並且第二阻隔部75設置於第二晶片70上且位於第一感測區S1與第二感測區S2之間。 As shown in FIG. 7 , the light sensing package 7 includes a substrate 71 , a first wafer 72 , a second wafer 70 , a first blocking portion 73 , a second blocking portion 75 , and an encapsulating material 74 . The photo-sensing package 7 in this embodiment is different from the photo-sensing package 3 in the foregoing embodiment in that the photo-sensing package 7 further includes a second blocking portion 75, and the second blocking portion 75 is disposed on The second wafer 70 is located between the first sensing region S1 and the second sensing region S2.

如圖8所示,光感測封裝體7具有三透光孔的封裝結構,第二晶片70上的第一感測區S1與第二感測區S2彼此分離設置,第一感測區 S1位於左側較大的透光孔下方且第二感測區S2位於中間偏右較小的透光孔下方;第一晶片72則位於右側較小的透光孔下方;第一感測區S1與第二感測區S2之間的距離D1’大於第二感測區S2與第一晶片32之間的距離D2’;第二感測區S2的左側至第一晶片72的右側之間的距離小於2mm,較佳為1.2~1.5mm,但不以此為限。 As shown in FIG. 8 , the light sensing package 7 has a three-transmission hole package structure, and the first sensing region S1 and the second sensing region S2 on the second wafer 70 are separated from each other, and the first sensing region is disposed. S1 is located below the larger transparent aperture on the left side and the second sensing region S2 is located below the smaller transparent aperture in the middle; the first wafer 72 is located below the smaller transparent aperture on the right side; the first sensing region S1 The distance D1' with the second sensing region S2 is greater than the distance D2' between the second sensing region S2 and the first wafer 32; between the left side of the second sensing region S2 and the right side of the first wafer 72 The distance is less than 2 mm, preferably 1.2 to 1.5 mm, but not limited thereto.

至於圖9及圖10分別繪示將圖7中之光感測封裝體設置於可攜式電子裝置的表面玻璃之下的上視圖及剖面圖。由於圖9及圖10所繪示的技術內容與前述實施例類似,差別僅在於光感測封裝體7還包括位於第一感測區S1與第二感測區S2之間的第二阻隔部75,故請參照前述實施例之相關說明,於此不另行贅述。 9 and FIG. 10 are respectively a top view and a cross-sectional view showing the light sensing package of FIG. 7 disposed under the surface glass of the portable electronic device. The technical content shown in FIG. 9 and FIG. 10 is similar to that of the foregoing embodiment, except that the photo-sensing package 7 further includes a second blocking portion between the first sensing region S1 and the second sensing region S2. 75. Therefore, please refer to the related description of the foregoing embodiment, and details are not described herein.

相較於先前技術,根據本發明的可攜式電子裝置及其光感測封裝體是將設置於同一光感測晶片上的環境光感測器與近接感測器彼此分隔開一段距離,藉以增大只對應於環境光感測器的獨立透光孔,以增大其視野角度,並且此獨立透光孔並不位於表面玻璃上所設置的紅外光穿透膜之下,故不會受到紅外光穿透膜的影響,可有效增進可見光穿透率,使得環境光感測器所感測到的環境光亮度變化能更符合人眼實際感受到的環境光亮度變化。 Compared with the prior art, the portable electronic device and the light sensing package thereof according to the present invention separate the ambient light sensor and the proximity sensor disposed on the same light sensing wafer from each other by a distance. Therefore, the independent light-transmitting hole corresponding only to the ambient light sensor is increased to increase the viewing angle thereof, and the independent light-transmitting hole is not located under the infrared light penetrating film disposed on the surface glass, so Under the influence of the infrared light penetrating film, the visible light transmittance can be effectively improved, so that the ambient light brightness change sensed by the ambient light sensor can more closely conform to the ambient light brightness change actually perceived by the human eye.

藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。 The features and spirit of the present invention will be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed.

3‧‧‧光感測封裝體 3‧‧‧Light sensing package

30‧‧‧第二晶片 30‧‧‧second chip

31‧‧‧基板 31‧‧‧Substrate

32‧‧‧第一晶片 32‧‧‧First chip

33‧‧‧阻隔部 33‧‧‧Barrier

34‧‧‧封裝材料 34‧‧‧Packaging materials

S1‧‧‧第一感測區 S1‧‧‧First Sensing Area

S2‧‧‧第二感測區 S2‧‧‧Second Sensing Area

L1、L1’‧‧‧紅外光線 L1, L1’‧‧‧ infrared light

L2‧‧‧可見光線 L2‧‧‧ Visible light

D1‧‧‧第一感測區與第二感測區之間的距離 D1‧‧‧Distance between the first sensing area and the second sensing area

D2‧‧‧第二感測區與第一晶片之間的距離 D2‧‧‧Distance between the second sensing area and the first wafer

Claims (14)

一種光感測封裝體,設置於一殼體中,該殼體具有一第一透光區域與一第二透光區域,該光感測封裝體包括:一第一晶片,提供一光源;一第二晶片,具有一第一感測區及一第二感測區,其中該第一感測區提供一環境光感測訊號,該第二感測區提供一近接感測訊號,且該第二感測區位於該第一晶片與該第一感測區之間;以及一第一阻隔部,設置於該第一晶片與該第二晶片之間,其中,該第一感測區位於該第一透光區域之下,該第一晶片與該第二感測區位於該第二透光區域之下。 An optical sensing package is disposed in a housing, the housing has a first light transmissive area and a second light transmissive area, the photo sensing package includes: a first wafer, providing a light source; The second chip has a first sensing area and a second sensing area, wherein the first sensing area provides an ambient light sensing signal, the second sensing area provides a proximity sensing signal, and the second The second sensing region is located between the first wafer and the first sensing region; and a first blocking portion is disposed between the first wafer and the second wafer, wherein the first sensing region is located Below the first light transmissive region, the first wafer and the second sensing region are located below the second light transmissive region. 如申請專利範圍第1項所述的光感測封裝體,其中該第二透光區域為一類圓形狀,且其直徑小於2mm。 The photo-sensing package of claim 1, wherein the second light-transmissive region is of a circular shape and has a diameter of less than 2 mm. 如申請專利範圍第1項所述的光感測封裝體,其中該第一感測區與該第二感測區之間具有一第一距離且該第二感測區與該第一晶片之間具有一第二距離,該第一距離大於該第二距離。 The photo-sensing package of claim 1, wherein the first sensing area and the second sensing area have a first distance and the second sensing area and the first chip are There is a second distance between the first distance and the second distance. 如申請專利範圍第1項所述的光感測封裝體,其中該第二感測區之一側至該第一晶片之一側之間具有一第三距離,該第三距離小於2mm。 The photo-sensing package of claim 1, wherein a side of the second sensing region to a side of the first wafer has a third distance, the third distance being less than 2 mm. 如申請專利範圍第1項所述的光感測封裝體,其中該第二透光區域設置有一第一薄膜,以濾除其他非紅外光波長的光。 The photo-sensing package of claim 1, wherein the second light-transmissive region is provided with a first film to filter out light of other non-infrared wavelengths. 如申請專利範圍第1項所述的光感測封裝體,其中該第一透光區域設置有一第二薄膜,以增進環境光的通過。 The photo-sensing package of claim 1, wherein the first light-transmissive region is provided with a second film to enhance the passage of ambient light. 如申請專利範圍第1項所述的光感測封裝體,還包括:一第二阻隔部,設置於該第二晶片上且位於該第一感測區與該第二感測區之間。 The photo-sensing package of claim 1, further comprising: a second blocking portion disposed on the second wafer and located between the first sensing region and the second sensing region. 一種可攜式電子裝置,包括:一殼體;一蓋體,設置於該殼體上,且該蓋體具有一第一透光區域與一第二透光區域;以及一光感測封裝體,設置於該殼體中,該光感測封裝體包括:一第一晶片,提供一光源;一第二晶片,具有一第一感測區及一第二感測區,其中該第一感測區提供一環境光感測訊號,該第二感測區提供一近接感測訊號,且該第二感測區位於該第一晶片與該第一感測區之間;以及一第一阻隔部,設置於該第一晶片與該第二晶片之間,其中,該第一感測區位於該第一透光區域之下,該第一晶片與該第二感測區位於該第二透光區域之下。 A portable electronic device includes: a housing; a cover disposed on the housing, the cover having a first light transmissive area and a second light transmissive area; and a light sensing package The light sensing package includes: a first wafer, providing a light source; and a second wafer having a first sensing region and a second sensing region, wherein the first sensing The measurement area provides an ambient light sensing signal, the second sensing area provides a proximity sensing signal, and the second sensing area is located between the first wafer and the first sensing area; and a first blocking a first portion is disposed between the first wafer and the second wafer, wherein the first sensing region is located below the first light transmissive region, and the first wafer and the second sensing region are located at the second transparent portion Below the light area. 如申請專利範圍第8項所述的可攜式電子裝置,其中該第二透光區域為一類圓形狀,且其直徑小於2mm。 The portable electronic device of claim 8, wherein the second light transmissive region is of a circular shape and has a diameter of less than 2 mm. 如申請專利範圍第8項所述的可攜式電子裝置,其中該第一感測區 與該第二感測區之間具有一第一距離且該第二感測區與該第一晶片之間具有一第二距離,該第一距離大於該第二距離。 The portable electronic device of claim 8, wherein the first sensing area There is a first distance from the second sensing region and a second distance between the second sensing region and the first wafer, the first distance being greater than the second distance. 如申請專利範圍第8項所述的可攜式電子裝置,其中該第二感測區之一側至該第一晶片之一側之間具有一第三距離,該第三距離小於2mm。 The portable electronic device of claim 8, wherein a side of the second sensing region to a side of the first wafer has a third distance, the third distance being less than 2 mm. 如申請專利範圍第8項所述的可攜式電子裝置,其中該第二透光區域設置有一第一薄膜,以濾除其他非紅外光波長的光。 The portable electronic device of claim 8, wherein the second transparent region is provided with a first film to filter out light of other non-infrared wavelengths. 如申請專利範圍第8項所述的可攜式電子裝置,其中該第一透光區域設置有一第二薄膜,以增進環境光的通過。 The portable electronic device of claim 8, wherein the first light-transmitting region is provided with a second film to enhance the passage of ambient light. 如申請專利範圍第8項所述的可攜式電子裝置,還包括:一第二阻隔部,設置於該第二晶片上且位於該第一感測區與該第二感測區之間。 The portable electronic device of claim 8, further comprising: a second blocking portion disposed on the second wafer and located between the first sensing region and the second sensing region.
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