TW201634910A - Electronics device - Google Patents

Abstract

An electronics device includes a power semiconductor device including a temperature detection diode, a first semiconductor integrated circuit device including a detection circuit for detecting VF from the temperature detection diode and a second semiconductor integrated circuit device. The second semiconductor integrated circuit device includes, an outside air temperature acquisition unit which acquires outside air temperature information, a storage which stores temperature characteristic data of the temperature detection diode and a first value based on a signal from the detection circuit at a first temperature and a temperature arithmetic processing unit which calculates a temperature of the power semiconductor device from a third value based on a signal from the detection circuit, the temperature characteristic data, the first temperature acquired by the outside air temperature acquisition unit and the first value.

Description

Electronic device

The present disclosure relates to an electronic device that can be applied to, for example, an electronic device including a power semiconductor device having a built-in temperature detecting diode.

The temperature of the semiconductor wafer is measured by the temperature dependence of the forward voltage (VF) of the diode provided in the semiconductor wafer.

In the prior art document related to the present disclosure, for example, there is Japanese Laid-Open Patent Publication No. Hei 5-40533.

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 5-40533

The VF system of the temperature detecting diode has a large variability, and the accuracy of temperature measurement in a wide temperature range is lowered.

Other items and novel features should be clarified by the description of the specification and the drawings.

A brief description of the representative of the present disclosure is as follows.

In other words, the electronic device includes a power semiconductor device, a first semiconductor integrated circuit device that drives the power semiconductor device, and a second semiconductor integrated circuit device that controls the first semiconductor integrated circuit device. The power semiconductor device includes a switching transistor and a temperature detecting diode. The first semiconductor integrated circuit device includes a drive circuit that drives the switching transistor, and a detection circuit that detects VF from the temperature detecting diode. The second semiconductor integrated circuit device includes: a control unit that controls the drive circuit; an outdoor temperature acquisition unit that acquires outdoor temperature information; and stores temperature characteristic data of the temperature detection diode and the temperature based on the first temperature a memory device having a first value of a signal of the detection circuit; and a third value obtained from the signal from the detection circuit, the temperature characteristic data, the first temperature obtained by the outdoor temperature acquisition unit, and the first A temperature calculation processing unit that calculates the temperature of the power semiconductor device by the value.

According to the above electronic device, the accuracy of temperature measurement in a wide temperature range can be reduced.

1, 1A, 1B, 1C‧‧‧ electronic devices

1D, 1E, 1F, 1G, 1H‧‧‧ electronic devices

10‧‧‧Power semiconductor devices

10A, 10B, 10C‧‧‧ IGBT (semiconductor device for power)

10D, 10E, 10F, 10G, 10H‧‧‧ IGBT

11‧‧‧Switching components

12‧‧‧Diode for temperature detection

13B, 13C‧‧‧ID circuit

13E‧‧‧ barcode

13H‧‧‧ID circuit

14‧‧‧Switching circuit

20‧‧‧1st semiconductor integrated circuit device

20A, 20B, 20C‧‧‧ Driver IC (1st semiconductor integrated circuit device)

20D, 20E, 20F, 20G, 20H‧‧‧ drive IC

21‧‧‧ gate circuit (drive circuit)

22‧‧‧A/D converter for temperature detection (detection circuit)

23‧‧‧ Current bias circuit

24‧‧‧Isolator

25‧‧‧ID readout circuit

25G, 25H‧‧‧ID readout circuit

30‧‧‧Second semiconductor integrated circuit device

30A, 30B, 30C‧‧‧ control circuit (second semiconductor integrated circuit device)

30D, 30E, 30F, 30G, 30H‧‧‧ control circuits

31‧‧‧CPU

32‧‧‧PWM circuit

33‧‧‧ memory device

34, 34B, 34C‧‧‧I/O interface

34H‧‧‧I/O interface

35‧‧‧A/D converter

36‧‧‧PC interface

44‧‧‧Outdoor temperature detector

45‧‧‧PC

Fig. 1 is a view for explaining the variability of VF of a temperature detecting diode.

Fig. 2 is a block diagram for explaining an electronic device according to an embodiment.

Fig. 3 is a block diagram for explaining an electronic device related to the first embodiment.

Fig. 4 is a block diagram for explaining a control circuit related to the first embodiment.

Fig. 5 is a view for explaining a method of manufacturing an electronic device according to the first embodiment.

Fig. 6 is a view for explaining the processing of the temperature system calculation unit according to the first embodiment.

Fig. 7 is a flow chart for explaining the processing of the temperature system calculation unit according to the first embodiment.

Fig. 8 is a block diagram for explaining a control circuit related to the first embodiment.

Fig. 9 is a block diagram for explaining a control circuit related to the first embodiment.

Fig. 10 is a block diagram for explaining an electronic device related to the second embodiment.

Fig. 11 is a block diagram for explaining a control circuit related to the second embodiment.

Fig. 12 is a flowchart for explaining processing of the temperature system calculation unit according to the second embodiment.

Fig. 13 is a flow chart for explaining the processing of the temperature system calculation unit according to the second embodiment.

Fig. 14 is a block diagram for explaining an electronic device related to the third embodiment.

Fig. 15 is a block diagram for explaining a control circuit related to the third embodiment.

Fig. 16 is a flow chart for explaining the processing of the temperature system calculation unit according to the third embodiment.

Fig. 17 is a block diagram for explaining an application example of the electronic device related to the first to third embodiments.

Fig. 18 is a view for explaining an isolator of the electronic device according to the first to third embodiments.

FIG. 19 is a diagram showing the configuration of a power module.

Fig. 20 is a block diagram for explaining an electronic device related to the fourth embodiment.

Fig. 21 is a diagram showing the configuration of a power module according to a fourth embodiment.

Fig. 22 is a view for explaining the ID reading device of the fourth embodiment.

Fig. 23 is a flow chart for explaining reading of temperature characteristic data of the ID circuit related to the fourth embodiment.

[Fig. 24] A temperature system calculation unit for explaining the description of the fourth embodiment Flow chart used.

Fig. 25 is a block diagram for explaining an electronic device related to the fifth embodiment.

Fig. 26 is a diagram showing the configuration of a power module according to a fifth embodiment.

Fig. 27 is a diagram showing the ID reading device related to the fifth embodiment.

Fig. 28 is a flow chart for explaining the reading of the ID code related to the fifth embodiment.

Fig. 29 is a flow chart for explaining the processing of the temperature system calculation unit according to the fifth embodiment.

Fig. 30 is a block diagram for explaining an electronic device related to Embodiment 6.

Fig. 31 is a flow chart for explaining the reading of the ID code relating to the sixth embodiment.

Fig. 32 is a block diagram for explaining an electronic device related to Embodiment 7.

Fig. 33 is a view showing the configuration of an IGBT according to the seventh embodiment.

Fig. 34 is a flow chart for explaining the processing of the temperature system calculation unit according to the seventh embodiment.

Fig. 35 is a block diagram for explaining an electronic device related to the eighth embodiment.

[FIG. 36] A connection between the driver IC and the IBGT related to Embodiment 8 The block diagram is shown as an example.

FIG. 37 is a timing chart of serial communication in the configuration of FIG. 36.

Fig. 38 is a flow chart for explaining the processing of the temperature system calculation unit according to the eighth embodiment.

Hereinafter, the embodiments and examples will be described with reference to the drawings. In the following description, the same components are denoted by the same reference numerals, and overlapping descriptions may be omitted.

The electric motor (motor) is used as a power source of a hybrid vehicle (HEV) or an electric vehicle (EV) combined with an internal combustion engine (gasoline engine). When the motor is driven, a power conversion device (inverter) that performs DC-AC conversion is used in order to obtain a predetermined torque and power supply frequency. The operating temperature of the inverter greatly changes due to the driving environment of the automobile, and in particular, the HEV in which the inverter is mounted in the engine room causes the inverter to become hot due to the influence of the heat generated by the engine. A switching element (for example, a power semiconductor device) in the inverter is a fixed loss due to a current flow of the power semiconductor device element itself, and a switching loss due to conduction/shutdown in addition to the ambient temperature. The temperature rises, and when it exceeds a certain temperature, there is a flaw.

A drive circuit for driving a power semiconductor device and a control circuit for controlling the drive circuit are used in addition to the power semiconductor device in the inverter. The drive circuit has a function of protecting the power semiconductor device from damage due to high temperature or the like in addition to the gate drive circuit for driving the power semiconductor device. Over current protection and overheat protection. For example, a diode for temperature detection is built in a power semiconductor device, and a current flows out from a current source in the drive circuit, and the current-temperature characteristic of the diode is used (when the temperature becomes high, the same current value is used) The forward voltage (VF) becomes low, and the comparator in the drive circuit determines whether the temperature of the wafer of the power semiconductor device is equal to or higher than the temperature corresponding to the reference voltage. In addition, when the detection temperature of the diode is equal to or higher than the set value, the control circuit outputs an alarm signal, and also outputs a signal to the gate drive circuit to forcibly interrupt the power semiconductor device. In addition, when the warning signal is output, the control circuit also performs a forced stop of the device.

The power semiconductor device is, for example, an insulated gate bipolar transistor (IGBT), and includes a switching element and a temperature detecting diode on one semiconductor substrate. The variability of the VF of the temperature detecting diode will be described with reference to Fig. 1 . Fig. 1 is a graph showing the relationship between VF and temperature (temperature characteristics) of a diode for temperature detection. Fig. 1 shows temperature characteristics in the case where the temperature detecting diode is connected in series in the second order (temperature (°C) when a bias current of 200 μA flows and VF (V) of the temperature detecting diode) relationship).

The VF of the diode for temperature detection of the IGBT is, for example, variability of ± 6% at room temperature (25 ° C) as shown in Fig. 1, and ± 5% or more at 175 ° C when the temperature coefficient is added. Variability. The broken line A is a typical value, and the solid lines B and C are straight lines parallel to the broken line A (the same temperature coefficient as a typical value) as a line indicating the upper limit and the lower limit of the variability of ±6% at 25 ° C. . Solid line D and C are the upper limit of ±6% variability at 25 °C The lower limit and the straight line connecting the upper limit and the lower limit of the variability of ±20% at 175 °C. The variability of the temperature coefficient is shown to increase as the temperature rises. In general, since the setting of the temperature abnormality detection is calculated based on the variation tolerance of the IGBT, there is a problem that the allowable operating temperature range of the IGBT is reduced. For this reason, in order to perform the characteristic variation correction of the IGBT at the time of shipment inspection of the board in which the IGBT, the drive circuit, the control circuit, etc. are mounted, the adjustment time of the circuit constant of the detection circuit of the VF is changed.

<Embodiment>

Next, an electronic device according to the embodiment will be described with reference to Fig. 2 . 2 is a block diagram of an electronic device related to an embodiment. The electronic device 1 according to the embodiment includes the power semiconductor device 10, the first semiconductor integrated circuit device 20, and the second semiconductor integrated circuit device 30. The power semiconductor device 10 includes a switching element 11 and a temperature detecting diode 12. The first semiconductor integrated circuit device 20 includes a drive circuit 21 that drives the switching element 11 and a detection circuit 22 that detects the VF of the temperature detecting diode 12. The second semiconductor integrated circuit device 30 includes a control unit CC that controls the drive circuit 21, an outdoor temperature acquisition unit TA that acquires outdoor temperature information, and a temperature characteristic (K) for storing the temperature detection diode 12 and based on the first The memory device 33 of the first value (VF(A)) of the signal from the detection circuit 22 at the temperature (A); and the third value (VF(N)) and the temperature characteristic (based on the signal from the detection circuit 22) K) The temperature calculation processing unit TC that calculates the temperature (N) of the power semiconductor device 10 by the first temperature (A) and the first value (VF (A)) acquired by the outdoor temperature acquisition unit TA.

Since the temperature of the power semiconductor device is calculated using the temperature characteristic (K) of the power semiconductor device, the temperature measurement accuracy can be improved. Therefore, when the operation tolerance range of the power semiconductor device is set, it is not necessary to set the abnormality detection temperature to be low, and the reference voltage corresponding thereto can be determined, for example, and the operation tolerance range can be expanded and heat can be achieved. Yu Yu's optimization (wafer size reduction) and so on.

[Example 1]

First, the configuration of the electronic device A according to the first embodiment of the embodiment will be described with reference to Fig. 3 .

3 is a block diagram showing the configuration of an electronic device related to Embodiment 1. The electronic device 1A according to the first embodiment includes an IGBT 10A that is a power semiconductor device, a driver IC 20A that is a first semiconductor integrated circuit device, and a control circuit 30A that is a second semiconductor integrated circuit device.

The IGBT 10 is formed by mounting the switching element 11 and the temperature detecting diode 12 on one semiconductor substrate.

The driver IC 20 is a gate circuit (GATE CIRCUIT) 21 that is a drive circuit of the switching element 11, a temperature detecting A/D converter 22 that is a VF detection circuit of the temperature detecting diode 12, and a supply temperature. A current bias circuit (CURRENT BIAS) 23 for detecting a bias current of the diode 12 is formed by being mounted on one semiconductor substrate. The gate circuit 21 generates a gate electrode for turning on/off the switching element 11 based on a PWM (Pulse Width Modulation) signal from the control circuit 30. Polar drive drive signal (DRV). A resistor 41 is provided between the gate circuit 21 and the switching element 11.

The temperature detecting A/D converter 22 includes a comparator 221 and a triangular wave generating circuit 222. A capacitor 42 and a resistor group 43 are externally disposed in the triangular wave generating circuit 222. The resistor group 43 generates a reference voltage for generating a triangular wave.

The wafer temperature of the IGBT 10A is measured by using the forward voltage of the temperature detecting diode 12 in the IGBT 10A.

The constant current (IF) is caused to flow from the current bias circuit 23 of the driver IC 20A to the temperature detecting diode 12, and the temperature sensing output of the PWM after comparing the VF with the triangular wave signal from the triangular wave generating circuit 222 by the comparator 221 The signal (TSP) is sent to the control circuit 30 via the isolator 24 so that the temperature can be measured from the duty ratio of the PWM. The isolator 24 transmits a signal by magnetic coupling in which a wafer type transducer formed by wiring is insulated by an interlayer film.

The control circuit 30A is a CPU 31, a PWM circuit (PWM CIRCUIT) 32, a memory device (MEMORY) 33, an I/O interface (I/OIF) 34, and an A/D converter (ADC) that are interface with an external device. 35. A PC interface (PCIF) of an external PC (Personal Computer) is mounted on one semiconductor substrate, and is formed, for example, by a microcomputer unit (MCU). The memory device 33 is preferably configured by an electrically rewritable non-volatile memory such as a flash memory. Further, the program executed by the CPU 31 is preferably stored in an electrically rewritable non-volatile memory such as a flash memory or the like, and may be stored in the memory device 33.

The related control circuit 30A will be described using FIG.

4 is a block diagram showing the function of the control circuit related to Embodiment 1. The control circuit 30A includes an outdoor temperature switching unit 311, a temperature calculation processing unit 314, and a driving PWM control unit 318. The processing of the block software indicated by the broken line (the CPU 31 executes the processing of the program) is not limited thereto, and can be configured by, for example, a hard disk.

The outdoor temperature switching unit 311 is configured by the averaging processing unit 312 and the selection unit 313. The output of the outdoor temperature detector 44, which is a temperature sensor of a thermistor or the like, is converted by the A/D converter 35, and is selected by the selecting portion 313 to sample the input signal by the averaging processing portion 312 and average the complex signals. The signal of the noise is removed, or the temperature setting of the ambient temperature input from the PC 45 via the PC interface 36. As will be described later, the PC 45 performs temperature setting of the space in which the temperature of the electronic device 1A of the electronic device 1A can be set, or the PC 45 acquires the temperature setting value. Therefore, the PC 45 can input the set value of the ambient temperature to the control circuit 30A. The ambient temperature can be detected by either the outdoor temperature detector 44 or the PC 45, so that none of them can be used. In this case, the selection unit 313 of the outdoor temperature switching unit 311 may not have the averaging processing unit 312 when the ambient temperature is detected by the PC 45.

The temperature calculation processing unit 314 is composed of a temperature coefficient calculation unit 315, a temperature value conversion unit 316, and a temperature correction unit 317. The temperature information of the output of the selection unit 313 and the voltage information of the temperature detecting diode that has been converted by the temperature value conversion unit 316 by the temperature detecting A/D converter 22 are input to the temperature coefficient calculating unit 315. The temperature coefficient calculated by the temperature coefficient calculation unit 315 is the temperature information of the output of the selection unit 313 and The voltage information of the temperature detecting diode that has been converted by the temperature value converting unit 316 to the output of the temperature detecting A/D converter 22 is stored in the memory device 33. The temperature correction unit 317 corrects the temperature information used by the driving PWM control unit 318 based on the voltage information of the temperature detecting diode converted by the temperature value converting unit 316 and the information stored in the memory device 33.

Further, the storage system executed by the CPU 31 to the nonvolatile memory of the control circuit 30A may be any of the following.

(1) When the wafer of the control circuit 30A of the second semiconductor integrated circuit device is manufactured

(2) After being enclosed in the package of the control circuit 30A, it is mounted in front of the printed circuit board of the electronic device 1A.

(3) After the printed circuit board of the electronic device 1A is mounted (stored from the PC 45 via the PC interface 36)

A method of acquiring temperature characteristic data of the temperature detecting diode 12 which is a program of the manufacturing method of the electronic device 1A will be described with reference to FIGS. 5 to 7.

Fig. 5 is a view for explaining a method of manufacturing an electronic device according to the first embodiment. Fig. 6 is a view for explaining the calculation of the temperature coefficient by the temperature coefficient calculation unit in the first embodiment. Fig. 7 is a flowchart for obtaining the temperature coefficient obtained by the temperature coefficient calculation unit in the first embodiment.

The program for storing the temperature characteristic data of the temperature detecting diode shown in FIG. 5 in the electronic device is a test program in the process of the electronic device. Row. The electronic device 1A including the IGBT 10A, the driver IC 20A, and the control circuit 30A is prepared (step S10). The electronic device 1A is carried into a space where the ambient temperature can be set, such as a constant temperature bath, and the outdoor temperature detector 44, the PC 45, and the like are connected. The temperature characteristics of the temperature detecting diode 12 are obtained by the method described later (step S20). The outdoor temperature detector 44, the PC 45, and the like are removed from the electronic device 1A, and are carried out from a space in which the ambient temperature can be set.

As shown in Fig. 6, the temperature coefficient is calculated from the VF measurement value (VF (A)) at the first temperature (A) and the VF measurement value (VF (H)) at the second temperature (H). The first temperature (A) is, for example, normal temperature (25 ° C), and the second temperature (H) is high temperature (100 ° C).

As shown in Fig. 7, first, the IGBT 10A is turned off (step S21). The IGBT 10 is turned off so that the wafer temperature of the IGBT 10 is equal to the ambient temperature. Next, the ambient temperature is set to the normal temperature of the first temperature (A) (step S22). The ambient temperature is input from the outdoor temperature detector 44 or the PC 45. Then, the VF is calculated by the temperature value conversion unit 316 based on the signal from the temperature detecting A/D converter 22, which is the temperature information of the IGBT 10A (the temperature detecting diode 12) at the first temperature. The first value (VF(A)) is stored in the memory device 33 (step S23). Next, the ambient temperature is set to a high temperature of the second temperature (H) (step S24). The ambient temperature is input from the outdoor temperature detector 44 or the PC 45. Then, the VF is calculated by the temperature value conversion unit 316 based on the signal from the temperature detecting A/D converter 22, which is the temperature information of the IGBT 10A (the temperature detecting diode 12) at the second temperature. The second value (VF(H)) is stored in the memory device 33 (step S25). Calculate the temperature detection two according to the following formula (1) The temperature coefficient (K) of the polar body 12 is stored in the memory device 33 (step S26).

K = (VF (H) - VF (A)) / (H-A) [mV / ° C]. . . (1)

Next, the operation at the time of the general operation of the electronic device will be described with reference to FIGS. 8 and 9. Further, the outdoor temperature detectors 44 and PC45 are required to calculate the temperature coefficient, but are not required for normal operation.

Fig. 8 is a block diagram showing the function of the temperature correction unit mainly among the control circuits related to the first embodiment. Fig. 9 is a block diagram showing the functions of the PWM control unit mainly among the control circuits related to the first embodiment.

The temperature measurement method at the time of normal operation of the electronic device 1A is shown in FIG.

The signal from the temperature detecting A/D converter 22 based on the temperature information of the IGBT 10A (the temperature detecting diode 12) is calculated by the temperature value converting unit 316 as the third value (VF(N)). The temperature correcting unit 317 applies the third value (VF(N)), the temperature coefficient (K) stored in the memory device 33, the first temperature (A), and the first value (VF (A)), and In the equation (2), the measured temperature (N) of the IGBT 10A is calculated.

N=(VF(N)-VF(A))/K+A[°C]. . . (2)

As shown in FIG. 9, the driving PWM control unit 318 controls the PWM circuit 32 so as to generate a PWM signal that is a driving signal (DRV) of the switching element 11. Further, the driving PWM control unit 318 has a function of controlling the PWM circuit 32 in such a manner as to suppress the driving of the switching element 11 when the measured temperature of the IGBT 10A obtained by the temperature calculation processing unit 314 is close to a predetermined temperature. Or more than a predetermined temperature In this case, it is determined that the abnormal state is present, and the PWM circuit 32 is controlled to turn off the driving of the switching element 11, and the IGBT 10A is protected.

According to the first embodiment, the temperature characteristics of the temperature detecting diode can be obtained by including the characteristics of the entire electronic device such as the temperature detecting A/D converter, and the temperature measurement with high accuracy can be performed. Thereby, the IGBT can be protected at an appropriate temperature.

[Embodiment 2]

The configuration of the electronic device 1B relating to the second embodiment will be described with reference to FIG.

Figure 10 is a block diagram for explaining an electronic device related to Embodiment 2.

The electronic device 1B according to the second embodiment includes an IGBT 10B that is a power semiconductor device, a driver IC 20B that is a first semiconductor integrated circuit device, and a control circuit 30B that is a second semiconductor integrated circuit device.

The IGBT 10B is provided with an ID circuit (ID CIRCUIT) 13B that stores an ID code unique to the wafer. The other components are like IGBT 10A. The ID circuit 13B is configured by a ladder resistor, an electric fuse, or the like.

The driver IC 20B includes an ID read circuit 25B that reads the ID code of the ID circuit 13B. The other components are like the driver IC 20A. The ID read circuit 25B converts the voltage value from the ID circuit 13B into a PWM signal (digital serial signal) in the same manner as the temperature detecting A/D converter 22. The isolator 24B is like the isolator 24, but the number of isolators is increased.

The control circuit 30B includes an I/O interface 34B and an ID identification unit. 319. The other configuration is like the control circuit 30A. The ID recognition unit 319 recognizes the ID code based on the signal from the ID read circuit 25B.

In the wafer test processing at the time of wafer fabrication of the IGBT 10B, the normal temperature and high temperature tests are performed, and the characteristic data (VF (A), VF (H), K) of the IGBT 10B obtained in this case is used as a wafer together with the ID code. The database is measured and stored in the external memory device 46. In the wafer test process, the electric fuse of the ID circuit 13B of the IGBT 10B is cut off to set the ID code.

The related control circuit 30B will be described using FIG.

Figure 11 is a block diagram showing the function of the control circuit associated with Embodiment 2. The control circuit 30B according to the second embodiment is used in the temperature coefficient calculation unit 315B in addition to the temperature characteristic input from the PC interface 36, and the ID identification unit 319 which recognizes the ID code by reading the ID code via the I/O interface 34B. Other than the control circuit 30A. The processing of the block software indicated by the broken line (the CPU 31 executes the processing of the program) is not limited thereto, and may be, for example, a hardware.

The temperature calculation processing unit 314B is composed of a temperature coefficient calculation unit 315B, a temperature value conversion unit 316, and a temperature correction unit 317. The temperature information of the output of the selection unit 313, the voltage information of the temperature detecting diode 12 converted by the temperature value conversion unit 316, and the ID identification unit 319 corresponding to the output of the temperature detecting A/D converter 22 The temperature coefficient (K) of the ID code acquired from the external memory device (STORAGE) 46 storing the wafer measurement database of the PC 45 is input to the temperature coefficient calculation unit 315B. The temperature coefficient (K) of the input temperature coefficient calculation unit 315B, the temperature information of the output of the selection unit 313, and the temperature value conversion unit 316 are converted to the temperature detection unit. The voltage information of the temperature detecting diode 12 of the output of the A/D converter 22 is stored in the memory device 33.

A method of acquiring temperature characteristic data of the temperature detecting diode 12 which is a program of the manufacturing method of the electronic device 1B according to the second embodiment will be described with reference to FIG. 12 and FIG.

Fig. 12 is a flow chart for explaining the processing of the temperature system calculation unit according to the second embodiment. Fig. 13 is a flow chart for explaining the processing of the temperature system calculation unit according to the second embodiment.

The manufacturing method of the electronic device 1B is the same as that of the first embodiment except for the step S20. The procedure corresponding to step 20 will be described below.

First, the ID code of the IGBT 10B is read (step S27). Next, the temperature coefficient (K) is obtained from the external memory device 46 storing the wafer measurement database based on the ID code, and stored in the memory device 33 (step S28). Next, the IGBT 10B is turned off (step S21). Next, the ambient temperature is set to the normal temperature of the first temperature (A) (step S22). The ambient temperature is input from the outdoor temperature detector 44 or the PC 45. Then, the temperature value conversion unit 316 calculates VF based on the signal from the temperature detecting A/D converter 22, which is the temperature information of the IGBT 10B (the temperature detecting diode 12) at the first temperature. The first value (VF(A)) is stored in the memory device 33 (step S23). Alternatively, steps S27 and S28 may be exchanged with steps S21 to S23.

The case where the driver IC 20B is included to improve the adjustment accuracy will be described with reference to FIG.

First, the ID code of the IGBT 10B is read (step S27). Then, according to The ID code acquires the first value (VF (A)), the second value (VF (H)), and the temperature coefficient (K) from the external memory device 46 storing the wafer measurement database, and stores it in the memory device 33 (step S28B). ). Next, the IGBT 10B is turned off (step S21). Next, the ambient temperature is set to the normal temperature of the first temperature (A) (step S22). The ambient temperature is input from the outdoor temperature detector 44 or the PC 45. Then, the temperature value conversion unit 316 calculates VF based on the signal from the temperature detecting A/D converter 22, which is the temperature information of the IGBT 10B (the temperature detecting diode 12) at the first temperature. The fourth value (VF(A)') (step S23B). Next, a comparison is made between the fourth value (VF(A)') and the first value (VF(A)) of the wafer measurement database (step S29). Next, it is determined whether or not the difference between the fourth value (VF(A)') and the first value (VF(A)) is equal to or greater than a predetermined value (step S30). When the difference is equal to or greater than the predetermined value (in the case of Yes in step S30), the temperature shift at normal temperature A °C is performed (step S31). The normal temperature is shifted so that the temperature N obtained by substituting VF(A)' into the VF(N) of the formula (2) becomes the new normal temperature A'. The offset value is the difference between A' and A. Alternatively, steps S27 and S28B may be exchanged with steps S21 to S23B.

In addition, in the present embodiment, the temperature coefficient (K) or the like is obtained from the wafer measurement database stored in the external memory device 46 in step S28 or step S28B and stored in the memory device 33, but may be prepared in advance before step S27. A temperature coefficient (K) or the like corresponding to a plurality of ID codes is stored in the memory device 33.

The operation of the electronic device 1B in the normal operation is like the electronic device 1A.

The signal from the temperature detecting A/D converter 22 based on the temperature information of the IGBT 10B (the temperature detecting diode 12) is calculated by the temperature value converting unit 316 as the third value (VF(N)). The temperature correcting unit 317 applies the third value (VF(N)), the temperature coefficient (K) stored in the memory device 33, the first temperature (A), and the first value (VF(A)), as described above. In the formula (2), the measured temperature (N) of the IGBT 10B is calculated.

The drive PWM control unit 318 controls the PWM circuit 32 so as to generate a PWM signal that is a drive signal (DRV) of the switching element 11. Further, the driving PWM control unit 318 has a function of controlling the PWM circuit 32 in such a manner as to suppress the driving of the switching element 11 when the measured temperature of the IGBT 10B obtained by the temperature calculation processing unit 314B is close to a predetermined temperature. When it exceeds a predetermined temperature, it is judged to be an abnormal state, and the PWM circuit 32 is controlled to turn off the driving of the switching element 11, and the IGBT 10B is protected.

According to the second embodiment, the temperature characteristics can be obtained without changing the ambient temperature of the first embodiment, so that the adjustment man-hour can be reduced. Further, in the normal operation, the same effects as in the first embodiment were obtained.

[Example 3]

The configuration of the electronic device 1C according to the third embodiment will be described with reference to FIG.

Figure 14 is a block diagram for explaining an electronic device related to Embodiment 3.

The electronic device 1C according to the third embodiment is provided with: a semiconductor semi-conductor The IGBT 10C of the bulk device is the driver IC 20C of the first semiconductor integrated circuit device and the control circuit 30C of the second semiconductor integrated circuit device.

The IGBT 10C includes an ID circuit (ID CIRCUIT) 13C that memorizes the temperature characteristics of the temperature detecting diode 12. The other components are like IGBT 10B. The ID circuit 13C is configured by a ladder resistor, an electric fuse, or the like.

The driver IC 20C includes an ID read circuit 25C that reads temperature characteristic data of the ID circuit 13C. The other components are like the driver IC 20B. The ID readout circuit 25C differs in reading data only like the ID readout circuit 25B.

The control circuit 30C includes an I/O interface 34C and an ID identification unit 319C, and does not include a PC interface 36. The other components are like the control circuit 30B. The ID recognition unit 319C acquires temperature characteristic data based on a signal from the ID read circuit 25C.

In the wafer test process at the time of wafer fabrication of the IGBT 10C, the temperature characteristic (the first value (VF(A))) of the temperature detecting diode 12 of the IGBT 10C obtained in this case is performed. The two values (VF (H)), the first temperature (A), and the second temperature (H) are calculated as temperature coefficients (K), and the electric fuses of the ID circuit 13C are cut off to set the temperature coefficient (K). Instead of the temperature coefficient (K), the first value (VF (A)) and the second value (VF (H)) may be set to cut off the electric fuse or the like. In this case, it is preferable to set the difference between the typical value of the normal temperature VF and the first value (VF(A)), the difference between the typical value of the high-temperature VF and the second value (VF(H)), and the reference material. . In this case, the ID readout circuit 25C is to take three voltage values from the ID circuit 13C. It is preferable to convert the time division into a PWM signal in the same manner as the A/D converter 22 for temperature detection.

The related control circuit 30C will be described using FIG.

Figure 15 is a block diagram showing the function of the control circuit associated with Embodiment 3.

The control circuit 30C according to the third embodiment has the PC interface 36, the outdoor temperature switching unit 311C does not have the selection unit 313, and the ID of the temperature characteristic data of the temperature detecting diode 12 is read via the I/O interface 34C. The control unit 30A is similar to the recognition unit 319C. The processing of the block software indicated by the broken line (the CPU 31 executes the processing of the program) is not limited thereto, and may be, for example, a hardware.

The temperature calculation processing unit 314C is composed of a temperature coefficient calculation unit 315C, a temperature value conversion unit 316, and a temperature correction unit 317. The temperature information of the output of the average interval processing unit 312, the voltage information of the temperature detecting diode 12 converted by the temperature value converting unit 316, and the ID identifying unit from the output of the temperature detecting A/D converter 22 The temperature coefficient (K) of 319C is input to the temperature coefficient calculation unit 315C. The temperature coefficient (K) of the input temperature coefficient calculation unit 315C, the temperature information of the output of the averaging processing unit 312, and the temperature detection unit for converting the output of the temperature detecting A/D converter 22 by the temperature value conversion unit 316 The voltage information of the polar body 12 is stored in the memory device 33.

A method of obtaining temperature characteristic data of the temperature detecting diode 12 which is a program of the manufacturing method of the electronic device 1C according to the third embodiment will be described with reference to FIG.

Fig. 16 is a flow chart for explaining the processing of the temperature system calculation unit according to the third embodiment.

The procedure for storing the temperature characteristic data of the temperature detecting diode 12 in the electronic device 1C is the same as that in the first embodiment except for the step S20. The procedure corresponding to step 20 will be described below.

First, the ID code of the IGBT 10C is read (step S27C). Here, the ID code includes a temperature coefficient (K), a value corresponding to the first value (VF (A)), and a value corresponding to the second value (VF (H)). Next, the temperature coefficient (K) included in the ID code or the temperature coefficient (K) calculated from the information contained in the ID code is stored in the memory device 33 (step S28C). Next, the IGBT 10C is turned off (step S21). Next, the ambient temperature is set to the normal temperature of the first temperature (A) (step S22). The ambient temperature is input from the outdoor temperature detector 44. Then, the temperature value conversion unit 316 calculates the VF based on the signal from the temperature detecting A/D converter 22, which is the temperature information of the IGBT 10C (the temperature detecting diode 12) at the first temperature. The first value (VF(A)) is stored in the memory device 33 (step S23).

The operation of the electronic device 1C in the normal operation is like the electronic device 1A.

The signal from the temperature detecting A/D converter 22 based on the temperature information of the IGBT 10C (the temperature detecting diode 12) is calculated by the temperature value converting unit 316 as the third value (VF(N)). The temperature correcting unit 317 applies the third value (VF(N)), the temperature coefficient (K) stored in the memory device 33, the first temperature (A), and the first value (VF(A)), as described above. In the formula (2), the measured temperature (N) of the IGBT 10C is calculated.

The drive PWM control unit 318 controls the PWM circuit 32 so as to generate a PWM signal that is a drive signal (DRV) of the switching element 11. Further, the driving PWM control unit 318 has a function of controlling the PWM circuit 32 in such a manner as to suppress the driving of the switching element 11 when the measured temperature of the IGBT 10C obtained by the temperature calculation processing unit 314C is close to a predetermined temperature. When it exceeds a predetermined temperature, it is judged to be an abnormal state, and the PWM circuit 32 is controlled to turn off the driving of the switching element 11, and the IGBT 10C is protected.

According to the third embodiment, the environmental temperature change as in the first embodiment, the connection to the external PC as in the second embodiment, and the like are not required, so that the adjustment procedure can be reduced. Further, in the normal operation, the same effects as in the first embodiment were obtained.

[Application example]

A motor system relating to an application example of the electronic devices of the first to third embodiments will be described with reference to FIG.

As shown in FIG. 17, the motor system 200 according to the application example includes a three-phase motor 40, a power module 100 using six IGBTs 10A according to the first embodiment, and six driver ICs 20A according to the first embodiment, and an embodiment. 1 related control circuit 30A, power supply circuit (boost circuit) 50 and battery 60. The power module 100 is a switching element 11 inside the power module 100 such that a voltage boosted by the power supply circuit 50 is driven when a vehicle or the like is driven to cause current to flow to each phase of the three-phase motor 40. The ON/OFF control is performed, and the speed of the vehicle or the like is changed by the frequency of the switching. Further, when the voltage of the battery 60 is sufficiently high, the booster circuit may not be used. In addition, in vehicles, etc. At the time of braking, the switching element 11 is turned ON/OFF in synchronization with the voltage generated in each phase of the three-phase motor 40, and a so-called rectification operation is performed to convert it into a DC voltage for regeneration.

The three-phase motor 40 is composed of a permanent magnet, the armature is constituted by a coil, and the three-phase (U-phase, V-phase, and W-phase) armature coils are arranged at intervals of 120 degrees. The coil is Δ wired, and the current flows uninterruptedly to the three coils of the U phase, the V phase, and the W phase.

The power module 100 is an IGBT 10UU for the U-phase of the upper arm, an IGBT 10UV for the V-phase power of the upper arm, an IGBT 10UW for the W-phase power of the upper arm, and an IGBT 10LU for the U-phase power of the lower arm. The V-phase power IGBT 10LV of the arm and the W-phase power IGBT 10LW of the lower arm are configured. Here, the configurations of the IGBTs 10UU, 10UV, 10UW, 10LU, 10LV, and 10LW are the same as those used in the IGBT 10A of the first embodiment. The IGBTs 10UU, 10UV, 10UW, 10LU, 10LV, and 10LW are semiconductor wafers including a switching element 11 and a reflow diode D1 connected in parallel between the emitter and the collector of the switching element 11 and the temperature detecting diode 12, respectively. And constitute. The return diode D1 is connected such that a current flows in a direction opposite to the current flowing through the switching element 11. The reflow diode D1 is not the same substrate as the semiconductor substrate on which the switching element 11 and the temperature detecting diode 12 are formed, and in this case, is sealed in the semiconductor substrate on which the switching element 11 and the temperature detecting diode 12 are formed. The same package is preferred.

Instead of the IGBT 10A, the driver IC 20A, and the control circuit 30A related to the first embodiment, the IGBT 10B and the driver related to the second embodiment can be used. For the IC 20B and the control circuit 30B, the IGBT 10C, the driver IC 20C, and the control circuit 30C according to the third embodiment can be used.

The above-described application example has been described with respect to an example of an inverter applied to convert a direct current into an alternating current, but can be applied to a power conversion device such as a converter used in a power supply circuit (boost circuit) 50.

The motor system 200 is used as a power source for an HEV, an EV, or the like. The electronic devices 1A, 1B, and 1C are used as an in-vehicle electronic device.

[Installation example]

The separators 24, 24B are constituted by a wafer type converter as described above. Hereinafter, a wafer type converter will be described with reference to FIG.

Fig. 18 is a view for explaining a wafer type converter constituting an isolator of the electronic device according to the first to third embodiments.

In the wafer-type converter 241, a spiral coil 243 is formed on the wafer DIE1 on the side including the transmission pulse generating circuit 242, and an interlayer film 244 formed of an insulating film such as a tantalum oxide film is formed thereon to form a spiral shape. The coil 245 is connected to the wafer DIE2 on the side including the reception pulse detecting circuit 246, and the bonding wire 247. In other words, the wafer-type converter 241 is insulated from the coil 245 formed on the lower layer by the interlayer film 244, and the signal is transmitted via the magnetic coupling 248. For example, the wafer DIE1 of the driver IC 20A is connected to the control circuit 30A, and the gate circuit 21, the temperature detecting A/D converter 22, and the like are formed on the wafer DIE2. The wafer DIE1 and the wafer DIE2 are mounted on a package 249. The driver ICs 20B and 20C can also be mounted in the same manner. When installed like this, in electric In the machine system 200, the control circuit 30A can be configured in a single package and the driver IC 20A in a six package. In the case where the optical coupler constitutes the isolator, a 6-package of the optical coupler is further required.

An example in which the power module using the IGBT of the third embodiment is connected to the driver IC of the third embodiment will be described with reference to FIG. Fig. 19 is a view showing the configuration of a power module. One phase share of 3-phase control is shown. The power module 100C includes a group of three sets of the IGBT 10UC and the reflow diode D1, and three sets of the IGBT 10LC and the return diode D1. Each of the IGBTs 10UC and 10LC includes a switching element 11, a temperature detecting diode 12, and an ID circuit 13C. The IGBTs 10UC and 10LC are the IGBT 10C as in the third embodiment.

The power module 100C includes a gate terminal T1 for supplying a gate terminal signal (Gate) to the switching element 11 of the IGBT 10UC, and a sense of outputting a sense current (Isense) from the sensing emitter terminal. The current measuring terminal T2 is provided for a power supply terminal (D+) for supplying a positive voltage (DC+) to the collector terminal, and a driving terminal T6 for outputting a driving current (Drive) from the emitter terminal. Further, the power module 100C includes a temperature detecting terminal T3 for the forward voltage (Temp) of the temperature detecting diode 12 for outputting the IGBT 10UC, and a ground for connecting the ground voltage (GND) to the cathode terminal. Terminal T4.

The power module 100C includes a gate terminal T1 for supplying a gate terminal signal (Gate) to the switching element 11 of the IGBT 10LC, and a sense of outputting a sense current (Isense) from the sensing emitter terminal. Measuring current terminal T2 and electricity for supplying negative voltage (DC-) to the emitter terminal Source terminal T7. In addition, the power module 100C includes a temperature detecting terminal T3 for the forward voltage (Temp) of the temperature detecting diode 12 for outputting the IGBT 10LC, and a ground for connecting the ground voltage (GND) to the cathode terminal. Terminal T4. Further, the collector terminal of the IGBT 10LC is connected to the drive terminal T6.

The ID circuit 13C is configured by a ladder resistor, and includes a terminal for measuring a reference resistance value (Ref) and a resistance value (ID) for measuring a ladder resistor obtained by cutting an electric fuse (e-Fuse). The terminal and the terminal for connection to GND are connected to the reference resistance value measurement terminal T9, the resistance value measurement terminal T8, and the ground terminal T4, respectively. The gate terminal T1, the sensing current terminal T2, the temperature detecting terminal T3, the ground terminal T4, the reference resistance value measuring terminal T9, and the resistance value measuring terminal T8 are connected to the driver IC 20C.

When the ID circuit 13C is added, the GND terminal of the ID circuit 13C and the GND terminal of the temperature detecting diode 12 are shared, but two terminals and connection wiring are required for each driver IC, and the whole terminal becomes 12 terminals and Addition of connection wiring. In the case of using the IGBT 10B (ID circuit 13B) of the second embodiment, two terminals and connection wirings are required for each driver IC, and the entire terminal and the connection wiring are added to each other.

[Example 4]

The fourth embodiment is an example of obtaining ID information (temperature characteristic data) of the IGBT without passing through the driver IC. A related embodiment will be described using FIG. 4 The structure of the related electronic device 1D.

Figure 20 is a block diagram for explaining an electronic device related to Embodiment 4.

The electronic device 1D according to the fourth embodiment includes an IGBT 10D which is a power semiconductor device, a driver IC 20D which is a first semiconductor integrated circuit device, and a control circuit 30D which is a second semiconductor integrated circuit device. The IGBT 10D is like the IGBT 10C, but the ID circuit 13C is not connected to the driver IC 20D. The driver IC 20D is like the driver IC 20. The control circuit 30D includes a PC interface 36 and an ID identification unit 319D instead of the I/O interface 34C and the ID identification unit 319C of the control circuit 30C. The other components are like the control circuit 30C. The ID recognition unit 319D acquires temperature characteristic data based on the ID measurement database from the external storage device 46b.

The writing of the temperature characteristic data to the ID circuit 13C will be described.

The wafer test program at the time of wafer fabrication of the IGBT 10D is subjected to a normal temperature and high temperature test by a tester (detection device) not shown. The tester is the temperature characteristic data (first value (VF (A)), second value (VF (H)), and first temperature (A) of the temperature detecting diode 12 of the IGBT 10D obtained in this case. The second temperature (H) is calculated as a temperature coefficient (K), and is recorded as a wafer measurement database in an external memory device (corresponding to the memory device of the external memory device 46a of the fifth embodiment). The ID writing device (not shown) reads the temperature coefficient (K) from the wafer measurement database recorded in the external memory device, and cuts the electric fuse of the ID circuit 13C to set the temperature coefficient (K). Further, instead of the temperature coefficient (K), the first value (VF (A)) and the second value may be created. (VF(H)) is set by cutting off an electric fuse or the like. In this case, it is preferable to set the difference between the typical value of the normal temperature VF and the first value (VF(A)), the difference between the typical value of the high-temperature VF and the second value (VF(H)), and the reference material. .

Next, the reading of the temperature characteristic data from the ID circuit 13C will be described using Figs. 21 is a diagram showing the configuration of a power module related to Embodiment 4. Fig. 22 is a view showing an example of the ID reading device according to the fourth embodiment. Fig. 23 is a flow chart for explaining reading of temperature characteristic data of the ID circuit related to the fourth embodiment.

The ID reading device (ID READER) 55D includes a detector 552D for the electrode pad 101 connected to the ID circuit 13C connected to the power module 100D and an ID reading for detecting temperature characteristic data based on a signal from the detector 552D. Take the device (ID READER) 551D. The electrode pad 101 includes an electrode pad corresponding to the reference resistance value measurement terminal T9, the resistance value measurement terminal T8, and the ground terminal T4. In the assembly procedure of the power module 100D, the ID reading device 55D connects the probe 552D to the electrode pad 101 of the IGBT 10D and reads the temperature characteristic data from the ID circuit 13C before the IGBT 10D is mounted on the substrate of the power module and sealed. (Step S271D). After that, the ID reading device 55D records the information on the mounting position of the power module 100D of the IGBT 10D and the temperature characteristic data as an ID measurement database in the external memory device 46b (step 272D). In addition, step 272D does not need to be an assembly procedure for power module 100D.

The control circuit 30D related to Embodiment 4 is in addition to the The ID identifying unit 319C that reads the temperature characteristic data of the temperature detecting diode 12 from the I/O interface 34C, and the ID identifying unit that reads the temperature characteristic data of the temperature detecting diode 12 via the PC interface 36 The 319D and the outdoor temperature switching unit 311 instead of the outdoor temperature switching unit 311 are similar to the control circuit 30C.

A method of acquiring temperature characteristic data of the temperature detecting diode 12 which is a program of the manufacturing method of the electronic device 1D according to the fourth embodiment will be described with reference to FIG.

Fig. 24 is a flow chart for explaining the processing of the temperature system calculation unit according to the fourth embodiment. The program for storing the temperature characteristic data of the temperature detecting diode 12 in the electronic device 1D is the same as that in the third embodiment except for steps S27C and S28C. The step corresponding to step S27C is performed as described above in the assembly procedure of the power module 100D. The procedure corresponding to step 28C will be described below.

The ID identification unit 319D acquires the position information and the temperature characteristic data of the power module 100D of the IGBT 10C from the ID measurement database recorded in the external memory device 46b via the PC interface 36. Here, the temperature characteristic data includes a temperature coefficient (K), a value corresponding to the first value (VF (A)), and a value corresponding to the second value (VF (H)). Next, the temperature coefficient (K) included in the temperature characteristic data or the temperature coefficient (K) calculated from the information contained in the temperature characteristic data is stored in the memory device 33 (step S28D).

The operation of the electronic device 1D in the normal operation is like the electronic device 1C. In addition, as in the third embodiment, the outdoor temperature detector 44, the PC 45, and the external memory device 46b are not required in the general operation of the electronic device 1D. And an ID reading device 55D.

According to the fourth embodiment, the ID circuit 13C and the driver IC 20D are not required to be connected as in the third embodiment, so that the terminal and the connection wiring can be reduced.

[Example 5]

In the fifth embodiment, an ID information (an ID code unique to a wafer) of an IGBT is obtained without passing through a driver IC. The configuration of the electronic device 1E related to the fifth embodiment will be described with reference to FIG.

Figure 25 is a block diagram for explaining an electronic device related to Embodiment 5.

The electronic device 1E according to the fifth embodiment includes an IGBT 10E that is a power semiconductor device, a driver IC 20E that is a first semiconductor integrated circuit device, and a control circuit 30E that is a second semiconductor integrated circuit device. The IGBT 10E is like the IGBT 10A, but a bar code 13E for recording an ID code is attached. The driver IC 20E is like the driver IC 20. The control circuit 30E includes the ID identification unit 319E instead of the ID identification unit 319B of the control circuit 30B, and does not include the I/O interface 34B. The other configuration of the control circuit 30E is like the control circuit 30B. The ID identification unit 319E obtains temperature characteristics based on the wafer measurement database from the external memory device 46a and the ID measurement database from the external memory device 46b.

Explain the writing of the ID code to the barcode 13E.

First, the wafer test program at the time of wafer fabrication of the IGBT 10E is subjected to a normal temperature and high temperature test by a tester (detection device) not shown, and the characteristic data of the IGBT 10E obtained in this case (VF (A), VF) (H), K) The ID code is stored in the external memory device 46a as a wafer measurement database. Further, the ID code is set by forming a bar code 13E or attaching a seal to the IGBT 10E at the time of wafer test.

Next, the reading of the ID code from the barcode 13E will be described using Figs. FIG. 26 is a diagram showing the configuration of the power module related to Embodiment 5. Figure 27 is a diagram for the ID reading device related to Embodiment 5. Figure 28 is a flow chart for explaining the reading of the ID code associated with the fifth embodiment. The ID READ DEVICE 55E includes a camera 552E or a bar code reader 553E for reading the bar code 13E of the IGBT 10E, and an ID code based on a signal from the camera 552E or the bar code reader 553E. ID reading device (bar code reading device, BAR-CODE READER) 551E. In the assembly procedure of the power module 100E, the ID reading device 55E reads the ID code from the barcode 13E by using the camera 552E or the barcode reader 553E (step S271E), and the power module 100E of the IGBT 10E can be found. The position information and the ID code are recorded in the external storage device 46b as the ID measurement database (step 272E).

In the control circuit 30E according to the fifth embodiment, the ID detecting unit 319B for reading the temperature characteristic data of the temperature detecting diode 12 via the I/O interface 34B is provided, and the temperature detecting diode is read via the PC interface 36. The ID identification unit 319E of the temperature characteristic data of the body 12 is similar to the control circuit 30B.

The temperature of the temperature detecting diode 12 which is a procedure of the manufacturing method of the electronic device 1E according to the fifth embodiment will be described with reference to FIG. How to obtain sexual data.

Fig. 29 is a flow chart for explaining the processing of the temperature system calculation unit according to the fifth embodiment.

The program for storing the temperature characteristic data of the temperature detecting diode 12 in the electronic device IE is the same as the second embodiment except for steps S27 and S28. The step corresponding to step S27 is performed as described above in the assembly procedure of the power module 100E. The procedure corresponding to step 28 will be described below.

The ID identification unit 319E acquires the mounting position information and the ID code of the power module 100E of the IGBT 10E from the ID measurement database recorded in the external memory device 46b via the PC interface 36. The ID identification unit 319E acquires the temperature characteristic data of the IGBT 10B from the wafer measurement database recorded in the external memory device 46a based on the ID code. Here, the temperature characteristic data includes a temperature coefficient (K), a value corresponding to the first value (VF (A)), and a value corresponding to the second value (VF (H)). Next, the temperature coefficient (K) contained in the temperature characteristic data or the temperature coefficient (K) calculated from the information contained in the temperature characteristic data is stored in the memory device 33 (step S28E).

The operation of the electronic device 1E in the normal operation is like the electronic device 1B. Further, as in the second embodiment, the outdoor temperature detector 44, the PC 45, the external memory devices 46a and 46b, and the ID reading device 55E are not required in the normal operation of the electronic device 1E.

According to the fifth embodiment, since the ID circuit 13B and the driver IC 20E are not required to be connected as in the second embodiment, the terminal and the connection wiring can be reduced. Further, since the ID circuit is not required to be provided in the IGBT 10E as in the fourth embodiment, the manufacture of the IGBT is easy, and the cost can be reduced.

[Embodiment 6]

The sixth embodiment is an example in which ID information (an ID code unique to a wafer) of an IGBT is obtained without passing through a driver IC. The configuration of the electronic device 1F according to the sixth embodiment will be described with reference to FIG.

Figure 30 is a block diagram for explaining an electronic device related to Embodiment 6.

The electronic device 1F according to the sixth embodiment includes an IGBT 10F which is a power semiconductor device, a driver IC 20F which is a first semiconductor integrated circuit device, and a control circuit 30F which is a second semiconductor integrated circuit device. The IGBT 10F is like the IGBT 10B, but the ID circuit 13B is not connected to the driver IC 20F. The driver IC 20F is like the driver ICs 20, 20E. The control circuit 30F is like the control circuit 30E. The ID identification unit 319E obtains temperature characteristics based on the wafer measurement database from the external memory device 46a and the ID measurement database from the external memory device 46b.

The writing of the ID code to the ID circuit 13B will be described.

First, the wafer test program at the time of wafer fabrication of the IGBT 10F is subjected to a normal temperature and high temperature test by a tester (detection device) not shown, and the characteristic data of the IGBT 10F obtained in this case (VF(A), VF) (H) and K) are stored in the external memory device 46a together with the ID code as a wafer measurement database. In the wafer test process, the ID code is set by cutting the electric fuse of the ID circuit 13B of the IGBT 10F or the like.

Next, the reading of the ID code from the ID circuit 13B will be described using FIG. Figure 31 is a flow chart for explaining the reading of the ID code associated with the sixth embodiment. Assembly procedure for power module 100F, ID reading The pick-up device 55D connects the probe 552D to the terminal and reads the ID code from the ID circuit 13B (step S271F), and knows that the information on the mounting position of the power module 100F of the IGBT 10F and the ID code are used as the ID measurement database. Recorded in the external memory device 46b (step 272F).

The method of obtaining the temperature characteristic data of the temperature detecting diode 12 which is a procedure of the manufacturing method of the electronic device 1F according to the sixth embodiment is as in the fifth embodiment.

The operation of the electronic device 1F in the normal operation is like the electronic device 1B. Further, as in the second embodiment, the outdoor temperature detector 44, the PC 45, the external memory devices 46a and 46b, and the ID reading device 55D are not required in the normal operation of the electronic device 1F.

According to the sixth embodiment, since the ID circuit 13B and the driver IC 20F are not required to be connected as in the second embodiment, the terminal and the connection wiring can be reduced.

[Embodiment 7]

In the seventh embodiment, an example in which the terminal of the existing IGBT and the terminal of the ID circuit are shared to obtain ID information (an ID code unique to the wafer) is obtained. The configuration of the electronic device 1G according to the seventh embodiment will be described with reference to FIG.

Figure 32 is a block diagram for explaining an electronic device related to Embodiment 7.

The electronic device 1G according to the seventh embodiment includes an IGBT 10G that is a power semiconductor device, a driver IC 20G that is a first semiconductor integrated circuit device, and a control circuit 30G that is a second semiconductor integrated circuit device.

Figure 33 is a diagram showing the configuration of the IGBT related to Embodiment 7 Figure. In the IGBT 10G, the switching circuit 14 is added to the IGBT 10B, and the gate terminal T1 is shared with the terminal for the resistance value (ID) of the measurement ID circuit 13B, and the current terminal T2 is sensed and the reference resistance value for the measurement ID circuit 13B ( The terminals used for Ref) are shared. The switching circuit 14 is controlled by a signal (Select) input from the terminal T10.

The driver IC 20G is the same as the driver IC 20B except for the ID readout circuit 25G. The ID readout circuit 25G is the same as the point of outputting the signal of the control switching circuit 14, and the point of inputting the signal from the output drive signal (DRV) and the signal line through which the bias current flows to the signal from the ID circuit 13B. ID readout circuit 25B.

The control circuit 30G includes an ID recognition unit 319G instead of the ID recognition unit 319 of the control circuit 30B. The other components are like the control circuit 30B. The ID recognition unit 319G recognizes the ID code based on the signal from the ID read circuit 25G.

In the wafer test procedure at the time of wafer fabrication of the IGBT 10G, the normal temperature and high temperature test are performed by a tester (detection device) not shown, and the characteristic data of the IGBT 10G obtained in this case (VF (A), VF (H) And K) are stored in the external memory device 46 together with the ID code as a wafer measurement database. In the wafer test process, the electric fuse of the ID circuit 13B of the IGBT 10G is cut or the like to set the ID code.

A method of obtaining temperature characteristic data of the temperature detecting diode 12 which is a program of the manufacturing method of the electronic device 1G according to the seventh embodiment will be described with reference to FIG.

Figure 34 is a diagram for explaining the processing of the temperature system calculation unit related to the seventh embodiment. Flow chart used.

The manufacturing method of the electronic device 1G is the same as that of the second embodiment except that a new process is added before step S27 and after step S28. The steps related to steps 27, 28 and before and after are explained below.

First, the ID identifying unit 319G connects the output of the ID circuit 13B to the signal (Select) input terminal T10 for the gate terminal T1 and the temperature detecting terminal T3 (step S31). The ID recognition unit 319G reads the ID code of the IGBT 10G (step S27). Next, the ID identifying unit 319G acquires the temperature coefficient (K) from the external memory device 46 storing the wafer measurement database based on the ID code, and stores it in the memory device 33 (step S28). Next, the ID identifying unit 319G inputs a signal (Select) for the switching circuit 14 to block the output of the ID circuit 13B from the gate terminal T1 and the temperature detecting terminal T3 (step S31).

The operation of the electronic device 1G in the normal operation is like the electronic device 1B. Further, as in the second embodiment, the outdoor temperature detector 44, the PC 45, and the external memory device 46 are not required in the normal operation of the electronic device 1G.

According to the seventh embodiment, the switching circuit shares the terminal for ID reading and the terminal for use during normal operation, so that the terminal and the connection wiring can be reduced. Although the switching circuit is controlled according to the signal from the CPU, the ID information is obtained only when the IGBT is mounted on the board, and is executed at the initial stage of the system integration test, so the signal can also be on the board. The pin settings are made. Instead of the ID circuit 13B that stores the ID code unique to the IGBT, the ID circuit 13C that stores the temperature characteristic data of the IGBT may be used.

[Embodiment 8]

The eighth embodiment is an example in which ID information (an ID code unique to a wafer) is obtained by a serial interface. The configuration of the electronic device 1H according to the eighth embodiment will be described with reference to FIG.

Figure 35 is a block diagram for explaining an electronic device related to Embodiment 8.

The electronic device 1H according to the eighth embodiment includes an IGBT 10H which is a power semiconductor device, a driver IC 20H which is a first semiconductor integrated circuit device, and a control circuit 30H which is a second semiconductor integrated circuit device.

The IGBT 10H is provided with an ID circuit 13H that stores an ID code as a serial interface for serial communication, in place of the ID circuit 13B of the IGBT 10B. The other components are like IGBT 10B.

The driver IC 20H is the same as the driver IC 20B except for the ID readout circuit 25H. The ID readout circuit 25H is not a serial signal in which the ID readout circuit 25B converts the analog ID code into a digital bit, and has the ID code of the digit received in the serial communication from the ID circuit 13H and transmitted to the control circuit 30H. Features.

The control circuit 30H includes an ID identification unit 319H instead of the ID recognition unit 319 of the control circuit 30B, and includes an I/O interface 34H instead of the I/O interface 34B. The other components are like the control circuit 30B. The ID recognition unit 319H recognizes the ID code based on the signal from the ID read circuit 25H.

In the wafer test procedure at the time of wafer fabrication of the IGBT 10H, the normal temperature and high temperature test are performed by a tester (detection device) not shown, and the characteristic data of the IGBT 10H obtained in this case (VF (A), VF (H) ), K) and ID The codes are stored together in the external memory device 46 as a wafer measurement database. In the wafer test process, the ID code is set by cutting the electric fuse of the ID circuit 13H of the IGBT 10H or the like.

A method of reading an ID code from an ID circuit of an IGBT in a power module by serial communication will be described with reference to FIGS. 36 and 37. Figure 36 is a block diagram showing a connection example of a driver IC and an IBGT related to Embodiment 8. Fig. 37 is a timing chart showing the serial communication in the configuration of Fig. 36.

The ID circuit of the IGBT of the upper arm side (high side) controlled by the three phases is cascade-connected, the driver IC 20H for the U phase, the ID circuit 13H for the U phase, the ID circuit 13H of the V phase, and the ID circuit of the W phase. 13H, and the driver IC20H are connected in sequence. The ID circuit of the lower arm side (low side) is also cascade-connected, and the order of the driver IC 20H for the U phase, the ID circuit 13H for the U phase, the ID circuit 13H for the V phase, the ID circuit 13H for the W phase, and the driver IC 20H connection. The serial clock signal (SCK) is output from the clock terminal of the driver IC 20H, and is input to the clock terminal of the U-phase ID circuit 13H, the clock terminal of the V-phase ID circuit 13H, and the clock terminal of the W-phase ID circuit 13H. The serial data is output from the data output terminal SO of the driver IC 20H, and is input to the data input terminal DI_U of the U-phase ID circuit 13H. The serial data is output from the data output terminal DO_U of the U-phase ID circuit 13H, and is input to the data input terminal DI_V of the V-phase ID circuit 13H. The serial data is output from the data output terminal DO_V of the V-phase ID circuit 13H, and is input to the data input terminal DI_W of the W-phase ID circuit 13H. The serial data is output from the data output terminal DO_W of the W-phase ID circuit 13H, and is input to the data input terminal of the driver IC 20H. SI. Further, the driver IC 20H for the V phase is connected to the switching element 11 of the IGBT 10H of the U phase and the diode 12 for temperature detection, but is not connected to the ID circuit 13H. The driver IC 20H for the W phase is connected to the switching element 11 of the W phase IGBT 10H and the temperature detecting diode 12, but is not connected to the ID circuit 13H.

For example, the ID circuit 13H is configured to set an ID code of 7 bits long, and the driver IC 20H is based on TX(0), TX(1), . . . The TX (6) sequentially transmits the serial data to the U-phase ID circuit 13H. In the U phase ID circuit 13H, ID_U(0), ID_U(1), . . . The ID code of ID_U(6) is sent to the ID circuit 13H of the V phase in this order. In the V-phase ID circuit 13H, ID_V(0), ID_V(1), . . . The ID code of ID_V(6) is transmitted to the ID circuit 13H of the W phase in this order. In the W phase ID circuit 13H, ID_W(0), ID_W(1), . . . The ID code of ID_W(6) is sent to the driver IC 20H in this order. Thereby, the serial signal output from the CPU 31 is synchronized, and the data output terminal DO_W is input to the CPU 31 so that the ID code of the IGBT according to the W phase, the ID code of the IGBT of the V phase, the ID code of the IGBT of the U phase, The order of the output information of the CPU 31 is obtained.

Further, the output information from the CPU 31 is outputted in a specific mode and daisy-chained to confirm the IGBT wafer mounting, or to transmit a known specific pattern from the CPU 31 so that signal synchronization can be set (where the ID code starts). In addition, it is also possible to confirm whether there is no time deviation of data reading based on the last input TX(n) signal from the CPU 31.

The electronic device related to the embodiment 8 will be described with reference to FIG. A method of obtaining temperature characteristic data of the temperature detecting diode 12 of a program of the manufacturing method of 1H.

Fig. 38 is a flow chart for explaining the processing of the temperature system calculation unit according to the eighth embodiment.

The manufacturing method of the electronic device 1H is the same as that of the second embodiment except that the processes of steps S27 and 28 are different. The procedure corresponding to steps 27 and 28 will be described below.

First, the ID identifying unit 319H outputs the serial clock signal (SK) to the IGBT 10H of each phase via the driver IC 20H, and outputs the serial data to the data input terminal DI_U of the U-phase IGBT 10H (step S271H). The ID identifying unit 319H reads the ID code of the IGBT 10H of each phase from the data output terminal DO_W of the W-phase IGBT 10H (step S27). Next, the ID identifying unit 319H acquires the temperature coefficient (K) from the external memory device 46 storing the wafer measurement database based on the ID code of the IGBT 10H of each phase, and stores it in the memory device 33 (step S28).

The operation of the electronic device 1H in the normal operation is like the electronic device 1B. Further, as in the second embodiment, the outdoor temperature detector 44, the PC 45, and the external memory device 46 are not required in the normal operation of the electronic device 1H.

According to the eighth embodiment, since only one phase of the driver IC is connected to the ID circuit of the IGBT, the terminal and the connection wiring can be reduced. It is also possible to store the temperature characteristic data of the IGBT in the ID circuit 13H instead of storing the ID code unique to the IGBT.

The invention created by the inventors of the present invention has been specifically described above based on the embodiments, but the present invention is not limited to the above embodiments. It is self-evident that all kinds of changes are made.

In the following, the embodiment will be described in the attached note.

(Note 1)

The driving method of the power semiconductor device with the built-in switching element and the temperature detecting diode includes: (a) a step of preparing an electronic device storing the temperature characteristic data of the temperature detecting diode; (b) driving a step of switching the element; (c) a step of detecting temperature information from the temperature detecting diode; (d) a step of detecting a temperature of the power semiconductor device based on the temperature information and the temperature characteristic data; (e) a step of stopping or suppressing driving of the switching element when the temperature detected in the step (d) exceeds a predetermined temperature; the temperature characteristic data is a temperature coefficient, a temperature of the first temperature environment, and the foregoing The voltage information of the temperature detecting diode in the first temperature environment.

(Note 2)

In the method of driving a power semiconductor device according to the first aspect, the temperature characteristic data is: (a1) detecting a temperature of the first temperature environment, and (a2) detecting the temperature detecting diode in the first temperature environment. Voltage information, (a3) detecting the temperature of the second temperature environment, (a4) detecting the voltage information of the temperature detecting diode in the second temperature environment, (a5) being obtained based on the above (a1) to (a4) The temperature and the voltage information are calculated.

(Note 3)

In the method of driving a power semiconductor device according to the first aspect, the temperature characteristic data is: (a1) detecting a temperature of the first temperature environment, and (a2) detecting the temperature detecting diode in the first temperature environment. The voltage information (a3) identifies the identification information of the power semiconductor device from the power semiconductor device, and (a4) obtains the temperature characteristic data corresponding to the identification information from the external memory device.

(Note 4)

In the method of driving a power semiconductor device according to the third aspect, the temperature characteristic data is a temperature coefficient obtained by a test in a first temperature environment and a second temperature environment of a wafer test at the time of manufacture of the power semiconductor device.

(Note 5)

In the method of driving a power semiconductor device according to the third aspect, the temperature characteristic data is a temperature coefficient obtained by a test in a first temperature environment and a second temperature environment of a wafer test at the time of manufacture of the power semiconductor device. (1) voltage information of the temperature detecting diode in the temperature environment and voltage information of the temperature detecting diode in the second temperature environment.

(Note 6)

In the method of driving a power semiconductor device according to the third aspect, the temperature characteristic data is (a5) the voltage information obtained by the above (a2) and the temperature detecting diode in the first temperature environment during wafer testing. When the difference of the voltage information is equal to or greater than a predetermined value, the temperature offset is corrected.

(Note 7)

In the method of driving a power semiconductor device according to the first aspect, the temperature characteristic data is: (a1) detecting a temperature of the first temperature environment, and (a2) detecting the temperature detecting diode in the first temperature environment. The voltage information (a3) is obtained by acquiring the temperature characteristic data for temperature detection from the power semiconductor device.

(Note 8)

In the method of driving a power semiconductor device according to the seventh aspect, the temperature characteristic data is a temperature coefficient obtained by a test in a first temperature environment and a second temperature environment of a wafer test at the time of manufacture of the power semiconductor device, or The voltage information of the temperature detecting diode in the first temperature environment and the voltage information of the temperature detecting diode in the second temperature environment.

(Note 9)

The method for manufacturing an electronic device includes: (a) a power semiconductor device in which a switching element and a temperature detecting diode are built in, a first semiconductor integrated circuit device including a gate circuit that drives the switching element, and And a program of the second semiconductor integrated circuit device that controls the non-volatile memory that can be electrically rewritten by the control unit of the gate circuit; and (b) a program for obtaining the temperature characteristic data of the temperature detecting diode.

(Note 10)

In the method of manufacturing an electronic device according to the ninth aspect, the (b) program includes: (b1) detecting a temperature of the first temperature environment and storing the temperature in the non-volatile memory; and (b2) operating at the first temperature environment. And detecting the voltage information of the temperature detecting diode and storing the voltage information in the non-volatile memory; (b3) a step of detecting a temperature of the second temperature environment; (b4) a step of detecting voltage information of the temperature detecting diode in the second temperature environment; and (b5) based on (b1) to (b1) The temperature characteristic data obtained by the step (b4) and the voltage information obtained are stored in the non-volatile memory.

(Note 11)

In the method of manufacturing an electronic device according to the ninth aspect, the (b) program includes: (b1) detecting a temperature of the first temperature environment and storing the temperature in the non-volatile memory; and (b2) operating at the first temperature environment. a step of detecting the voltage information of the temperature detecting diode and storing the voltage information in the non-volatile memory; (b3) a step of recognizing the identification information of the power semiconductor device from the power semiconductor device; and (b4) The temperature characteristic data corresponding to the identification information is obtained from an external database and stored in the non-volatile memory.

(Note 12)

In the method of manufacturing an electronic device according to the tenth aspect, the temperature characteristic data is a temperature coefficient obtained by a test in a first temperature environment and a second temperature environment of the wafer test at the time of manufacture of the power semiconductor device.

(Note 13)

In the method of manufacturing an electronic device according to the eleventh aspect, the temperature characteristic data is a temperature coefficient obtained by a test in a first temperature environment and a second temperature environment during manufacture of the power semiconductor device, and a first temperature environment. The voltage information of the temperature detecting diode and the voltage information of the temperature detecting diode in the second temperature environment.

(Note 14)

In the method of manufacturing an electronic device according to the supplementary note 13, the (b) program further includes: (b5) the voltage information obtained by the step (b2) and the temperature detection in the first temperature environment during the wafer test. The step of correcting the temperature offset when the difference of the voltage information of the diode is equal to or greater than a predetermined value.

(Note 15)

In the method of manufacturing an electronic device according to the ninth aspect, the (b) program includes: (b1) detecting a temperature of the first temperature environment and storing the temperature in the non-volatile memory; and (b2) operating at the first temperature environment. And detecting the voltage information of the temperature detecting diode and storing the voltage information in the non-volatile memory; and (b3) acquiring the temperature detecting device from the power semiconductor device The temperature characteristic data of the polar body is stored in the step of the aforementioned non-volatile memory.

(Note 16)

In the method of manufacturing an electronic device according to supplementary note 15, the temperature characteristic data is a temperature coefficient obtained by a normal temperature and a high temperature test of a wafer test at the time of manufacture of the power semiconductor device, or the temperature detecting second in a first temperature environment. The voltage information of the polar body and the voltage information of the temperature detecting diode in the second temperature environment.

10‧‧‧Semiconductor device

11‧‧‧Switching components

12‧‧‧Diode for temperature detection

20‧‧‧1st semiconductor integrated circuit device

21‧‧‧ gate circuit (drive circuit)

22‧‧‧A/D converter for temperature detection (detection circuit)

30‧‧‧Second semiconductor integrated circuit device

33‧‧‧ memory device

Claims (20)

An electronic device comprising: a power semiconductor device; a first semiconductor integrated circuit device that drives the power semiconductor device; and a second semiconductor integrated circuit device that controls the first semiconductor integrated circuit device; and the power semiconductor The device includes: a switching transistor; and a temperature detecting diode; the first semiconductor integrated circuit device includes: a driving circuit that drives the switching transistor; and a VF detected from the temperature detecting diode The second semiconductor integrated circuit device includes: a control unit that controls the drive circuit; an outdoor temperature acquisition unit that acquires outdoor temperature information; and stores temperature characteristic data of the temperature detection diode and is based on the first a memory device having a first value of a signal from the detection circuit at a temperature; and a third value obtained from the signal from the detection circuit, the temperature characteristic data, and the first temperature acquired by the outdoor temperature acquisition unit, Temperature calculation processing for calculating the temperature of the power semiconductor device by the first value . An electronic device as claimed in claim 1, wherein The second semiconductor integrated circuit device includes a temperature at which the temperature characteristic data is calculated from the first value and the second value obtained by the outdoor temperature acquiring unit based on a second value of a signal from the detection circuit. Coefficient calculation unit. The electronic device according to claim 2, wherein the outdoor temperature acquisition unit is obtained by setting an A/D conversion value or a PC temperature setting value to an output of the outdoor temperature detector. The electronic device according to claim 1, wherein the power semiconductor device includes an ID circuit including ID information of the power semiconductor device, and the first semiconductor integrated circuit device includes the ID information from the ID. In the ID readout circuit for reading the circuit, the second semiconductor integrated circuit device includes an ID identifying unit that recognizes the ID information from the ID reading circuit, and manufactures the power semiconductor device based on the ID information. The aforementioned temperature characteristic data obtained by the wafer test is stored in the aforementioned memory device. The electronic device according to claim 4, wherein the second semiconductor integrated circuit device includes a PC interface for storing the temperature characteristic data stored in the external memory device in the memory device. The electronic device of claim 5, wherein the temperature characteristic data is obtained by a test at the first temperature and the second temperature of the wafer test. The electronic device of claim 4, wherein the ID information includes the temperature characteristic data. The electronic device of claim 7, wherein the temperature characteristic is obtained by a test at the first temperature and the second temperature of the wafer test. The electronic device according to claim 1, wherein the second semiconductor integrated circuit device includes a memory of a CPU and a storage program. The electronic device of claim 2, wherein the memory device and the memory system flash memory. The electronic device according to claim 1, wherein the control unit is based on a temperature information from the detection circuit and a temperature detected by the temperature characteristic data stored in the memory device exceeding a predetermined temperature. The aforementioned drive circuit is stopped or suppressed. An electronic device comprising: a power semiconductor device; a first semiconductor integrated circuit device that drives the power semiconductor device; and a second semiconductor integrated circuit device that controls the first semiconductor integrated circuit device; and the power semiconductor The device includes: a switching transistor; a temperature detecting diode; and an ID memory unit that records ID information of the power semiconductor device; The first semiconductor integrated circuit device includes: a drive circuit that drives the switching transistor; and a detection circuit that detects VF from the temperature detecting diode; and the second semiconductor integrated circuit device includes: control a control unit of the drive circuit; an outdoor temperature acquisition unit that acquires outdoor temperature information; and a memory device that stores a temperature characteristic of the temperature detecting diode and a first value of a signal from the detection circuit at a first temperature; a temperature calculation processing unit that calculates the temperature of the power semiconductor device based on the third value of the signal from the detection circuit, the temperature characteristic data, the first temperature obtained by the outdoor temperature acquisition unit, and the first value And an ID identification unit that recognizes the ID information from the ID memory unit; and stores the temperature characteristic obtained by the wafer test at the time of manufacture of the power semiconductor device based on the ID information on the memory device. The electronic device according to claim 12, wherein the ID memory unit is an ID circuit provided in the power semiconductor device, and the ID circuit includes a first terminal and a second terminal. The electronic device according to claim 13, wherein the first semiconductor integrated circuit device includes an ID read circuit, and is connected to the first terminal and the second terminal. The ID information is read out via the ID readout circuit. The electronic device of claim 13, wherein the ID information is read by an external ID reading device of the electronic device and stored in an external memory device. The electronic device according to claim 14, wherein the ID circuit further includes: a ladder resistor; and an electric fuse; wherein the first terminal is configured to measure and cut the ladder resistor by the electric fuse The terminal for the resistance value, and the second terminal is for the terminal for measuring the reference resistance value. The electronic device according to claim 14, wherein the power semiconductor device further includes a switching circuit that performs connection and blocking of the gate terminal of the switching transistor and the first terminal, and The anode terminal of the temperature detecting diode is connected and blocked to the second terminal. The electronic device according to claim 14, wherein the first semiconductor integrated circuit device supplies the serial data to the ID circuit in synchronization with the serial clock signal, and the ID circuit synchronizes the ID information with The aforementioned serial clock signal is output to the outside. The electronic device of claim 12, wherein the ID information includes the temperature characteristic data. The electronic device of claim 12, wherein the ID memory unit is provided in a strip of the power semiconductor device code.