TW201620818A - Electric-programmable magnetic transfer module and transfer-bonding process for photoelectric devices - Google Patents

Abstract

A transfer-bonding process for photoelectric devices comprising: (a) providing a first substrate having a plurality of photoelectric devices formed thereon, the photoelectric devices being arranged in an array, and each of the photoelectric devices comprising a magnetic portion; (b) selectively picking-up parts of the photoelectric devices from the first substrate via a magnetic force generated from an electric-programmable magnetic transfer module; and (c) transfer-bonding the parts of the photoelectric devices picked-up by the electric-programmable magnetic transfer module with a second substrate.

Description

Electronic-programmable magnetic transfer module and method for transferring electronic components

The present invention relates to a method of transferring electronic components, and more particularly to a method of transferring electronic components using an electronically-programmable magnetic transfer module.

The inorganic light-emitting diode display has the characteristics of active light emission and high brightness, and thus has been widely used in the technical fields of illumination, display, projector, and the like. Taking monolithic micro-displays as an example, monolithic microdisplays are widely used in projectors and have been facing the technical bottleneck of colorization. At present, it has been proposed in the prior art to use a epitaxial technique to fabricate a plurality of light-emitting layers capable of emitting different colors of light in a single light-emitting diode wafer, so that a single light-emitting diode wafer can provide different color lights. However, since the lattice constants of the light-emitting layers capable of emitting different color lights are different, it is not easy to grow on the same substrate. In addition, other conventional techniques have proposed a colorization technique using a light-emitting diode wafer with different color conversion materials, wherein when the light-emitting diode wafer emits light, the color conversion material is excited to emit excitation light of different color lights, but this technology Still facing the conversion of color conversion materials Problems such as low efficiency and uniform coating.

In addition to the above two colorization techniques, there are also known techniques for the transfer of light-emitting diodes. Since the light-emitting diodes capable of emitting different color lights can be respectively grown on appropriate substrates, the light-emitting diodes can be compared. Good epitaxial quality and luminous efficiency. Therefore, the transposition technology of the light-emitting diode is more organic, which increases the brightness and display quality of the single-chip microdisplay. However, how to quickly and efficiently transfer the light-emitting diodes to the circuit substrate of the single-chip microdisplay is one of the current topics of concern in the industry.

An embodiment of the present application provides a method for transferring an electronic component and an electronic-programmable magnetic transfer module.

An embodiment of the present application provides a method for transferring an electronic component, comprising the steps of: (a) forming a plurality of array-arranged electronic components on a first substrate, each electronic component including a magnetic portion; (b) Selectively picking up a portion of the electronic component from the first substrate by a magnetic force generated by an electronically-programmable magnetic transfer module; and (c) picking up by the electronic-programmable magnetic transfer module A portion of the electronic components are transferred to a second substrate.

Another embodiment of the present application provides an electronic-programmable magnetic transfer module including a micro electro mechanical system (MEMS) wafer and a bonding device, the MEMS wafer including a plurality of electromagnetic coils and Each solenoid is individually controlled, wherein the MEMS wafer is assembled on the bonding device and carried by the bonding device.

The above described features and advantages of the invention will be apparent from the following description.

100, 100'‧‧‧Photoelectric semiconductor layer

100a, 100a’‧‧‧ surface

102‧‧‧Electrode

110‧‧‧Adhesive

110a‧‧‧Adhesive pattern

120‧‧‧ sacrificial layer

120a‧‧‧ sacrificial layer pattern

130‧‧ Magnetic Department

140‧‧‧Support material

140a‧‧‧Support layer

200‧‧‧Electronic-programmable magnetic transfer module

210‧‧‧Microelectromechanical system wafer

212‧‧‧Electromagnetic coil

212a‧‧‧Dielectric film

212b‧‧‧Electrical film

212c‧‧‧ conductive through hole

214‧‧‧ Ferromagnetic metal components

216‧‧‧Top dielectric film

220‧‧‧Joining equipment

300‧‧‧Control system

310‧‧‧Computer

320‧‧‧Electronic Control Unit

330‧‧‧Institutional Control Unit

340‧‧‧heating control unit

S0‧‧‧ growth substrate

S1‧‧‧ first substrate

S2‧‧‧second substrate

ED‧‧‧ electronic components

S10, S20, S30‧‧‧ steps

T‧‧‧ trench

P‧‧‧ Protrusion

OP‧‧‧ openings

FIG. 1 is a schematic flow chart of a method for transferring an electronic component according to an embodiment of the present application.

2A to 2N are schematic cross-sectional views showing a method of transferring an electronic component according to a first embodiment of the present application.

2J', 2J", and 2J''' are top schematic views of different support layers, respectively.

3 is a cross-sectional view of an electronic-programmable magnetic transfer module in accordance with an embodiment of the present application.

4A to 4E are schematic cross-sectional views showing a manufacturing process of a MEMS wafer of the present application.

Fig. 4A' is a schematic view showing a conductive film of the electromagnetic coil of Fig. 4A.

5 is a block diagram of the control system of the electronic-programmable magnetic transfer module of FIG.

6A to 6K are schematic cross-sectional views showing a method of transferring an electronic component according to a second embodiment of the present application.

First embodiment

1 is a flow chart of a method for transferring an electronic component according to an embodiment of the present application; schematic diagram. Referring to FIG. 1, the method for transferring electronic components of the present embodiment includes the following steps (S10, S20, and S30). First, a plurality of array-arranged electronic components are formed on a first substrate, wherein each of the electronic components includes a magnetic portion, and the magnetic portion can be located on or embedded in the electronic component (step S10). After the first substrate is further provided, a portion of the electronic components can be selectively picked up from the first substrate by a magnetic force generated by an electronically-programmable magnetic transfer module (step S20). Then, part of the electronic components picked up by the electronic-programmable magnetic transfer module are transferred to a second substrate (step S30). In the present embodiment, the transfer method of the electronic component may repeat the foregoing steps (S10 to S30) at least once so that the electronic components formed on the different first substrates can be transferred onto the second substrate. For example, electronic components formed on different first substrates can emit different colored lights. In this embodiment, the aforementioned electronic components are, for example, optoelectronic components (such as light emitting diode components, light sensing components, solar cells, etc.) or other optical components (such as sensors, transistors, etc.) that are not related to light. . Taking the light-emitting diode element as an example, the light-emitting diode element of the present embodiment may be a horizontal light-emitting diode element or a vertical light-emitting diode element according to the manner in which the electrodes are distributed.

In order to more clearly understand the first embodiment of the present application, it will be described in detail later with reference to FIGS. 2A to 2N.

2A to 2N are schematic cross-sectional views showing a method of transferring an electronic component according to a first embodiment of the present application.

First, referring to FIG. 2A, a growth substrate S0 is provided, and a photovoltaic semiconductor layer 100 is formed on the growth substrate S0. In this embodiment, the growth substrate S0 may be a germanium substrate, a tantalum carbide substrate, a sapphire substrate or other suitable substrate, and an optoelectronic semiconductor. The layer 100 may be a light emitting diode element layer, a light sensing element layer, a solar cell element layer, or the like, and the photoelectric semiconductor layer 100 may be formed by a metal-organic chemical vapour deposition (MOCVD) method, in other words, The optoelectronic semiconductor layer 100 is, for example, an epitaxial layer, and the epitaxial layer can emit light when a driving current passes through the epitaxial layer. Specifically, the optoelectronic semiconductor layer 100 may include a film layer of an N-type doped semiconductor layer, a multiple quantum well layer luminescent layer, and a P-type doped semiconductor layer, wherein the luminescent layer of the multiple quantum well layer is interposed between the N-type doped semiconductors Between the layer and the P-type doped semiconductor layer. In addition, the photo-semiconductor layer 100 may further include a buffer layer, an N-type cladding layer, a P-type cladding layer, and a current blocking layer in addition to the N-type doped semiconductor layer, the multiple quantum well layer light-emitting layer, and the P-type doped semiconductor layer. a current dispersion layer or a combination of the foregoing film layers. In the present embodiment, the photo-semiconductor layer 100 is not necessarily limited to be formed on the growth substrate S0, and other types of semiconductor layers may be formed on the growth substrate S0.

Referring to FIG. 2B, after the photo-semiconductor layer 100 is formed on the growth substrate S0, a plurality of electrodes 102 are formed on the optoelectronic semiconductor layer 100. In the embodiment, the electrode 102 includes a plurality of N electrodes electrically connected to the N-type doped semiconductor layer and a plurality of P electrodes electrically connected to the P-type doped semiconductor layer.

Referring to FIG. 2C, after the electrode 102 is formed on the optoelectronic semiconductor layer 100, the optoelectronic semiconductor layer 100 and the electrode 102 are temporarily bonded to a first substrate S1 through an adhesive 110, wherein the adhesive 110 is bonded to the electrode 102 and the optoelectronic semiconductor. The layer 100, and the adhesive 110 is interposed between the optoelectronic semiconductor layer 100 and the first substrate S1. In this embodiment, the first substrate S1 may be a germanium substrate, a tantalum carbide substrate, a sapphire substrate or other suitable substrate, and the material of the adhesive 110 may be organic. Materials, organic polymer materials, polymer materials or other materials with appropriate adhesion.

Referring to FIG. 2D, after the photo-semiconductor layer 100 and the electrode 102 are temporarily bonded to the first substrate S1, the growth substrate S0 is removed to expose a surface 100a of the optoelectronic semiconductor layer 100. In the present embodiment, the growth substrate S0 is separated from the surface 100a of the optoelectronic semiconductor layer 100 by, for example, laser lift-off.

Referring to FIG. 2E, after the growth substrate S0 is removed, the present embodiment selectively thins the photo-semiconductor layer 100 to reduce the thickness of the optoelectronic semiconductor layer 100. After the thinning is performed, the thinned photovoltaic semiconductor layer 100' has a surface 100a'. In the present embodiment, the optoelectronic semiconductor layer 100 mounted on the first substrate S1 can be thinned by chemical mechanical polishing (CMP), chemical etching, plasma etching, or other appropriate methods.

Referring to FIG. 2F, after the photo-semiconductor layer 100 is thinned, a sacrificial layer 120 is formed on the surface 100a' of the optoelectronic semiconductor layer 100'. Specifically, the sacrificial layer 120 covers the surface 100a' of the optoelectronic semiconductor layer 100'. In the present embodiment, the material of the sacrificial layer 120 is, for example, an organic material, an organic polymer material, a dielectric material, an oxide, or the like.

Referring to FIG. 2G, a plurality of magnetic portions 130 are formed on the sacrificial layer 120. In the present embodiment, the material of the magnetic portion 130 is, for example, nickel, nickel-iron alloy or other suitable ferromagnetic metal. It is to be noted that the magnetic portions 130 are separated from each other, and the magnetic portion 130 is distributed corresponding to the electrodes 102. For example, each of the magnetic portions 130 is located above a pair of electrodes 102 (ie, one N electrode and one P electrode), respectively. The thickness of the magnetic portion 130 is approximately 1 micrometer (1 μm), and the area and shape of each of the magnetic portions 130 can be designed according to actual needs.

Referring to FIG. 2G and FIG. 2H, the foregoing photo-semiconductor layer 100', the adhesive 110 and the sacrificial layer 120 are patterned to form a plurality of array-arranged electronic components ED, and a plurality of sacrifices on the electronic component ED The layer pattern 120a and the plurality of adhesive patterns 110a between the electronic component ED and the first substrate S1, and the adhesive pattern 110a, the sacrificial layer pattern 120a, and the electronic component ED constitute a plurality of stacked structures. In the present embodiment, the optoelectronic semiconductor layer 100, the adhesive 110, and the sacrificial layer 120 are patterned, for example, by a photolithography/etching process. As shown in FIG. 2H, the magnetic portion 130 is distributed corresponding to the sacrificial layer pattern 120a. For example, each of the magnetic portions 130 is respectively located on one sacrificial layer pattern 120a, and each of the electronic components ED is interposed between one sacrificial layer pattern 120a and one adhesive pattern 110a. Further, after the photo-semiconductor layer 100', the adhesive 110 and the sacrificial layer 120 are patterned, a plurality of trenches T interlaced with each other are formed between the aforementioned stacked structures.

2I to 2J, the lower half of FIG. 2I and FIG. 2J are schematic cross-sectional views, and the upper half of FIGS. 2I and 2J are schematic top views. 2I and 2J, a support material 140 having a predetermined thickness is filled into the grooves T interlaced with each other, and the support material 140 is patterned to form a support layer 140a, where the support material 140 and the support layer The thickness of 140a is less than the depth of trench T. In the present embodiment, the support material 140 is patterned by, for example, a lithography/etching process, and the patterned support layer 140a is formed on the first substrate S1 and located within the trench T to support the electronic component ED. Specifically, the support layer 140a actually connects adjacent electronic components ED, and the support layer 140a enables at least one of each of the adhesive patterns 110a Part is exposed. In other words, the support layer 140a exposes a part of the side walls and a portion of the first substrate S1 of each of the adhesive patterns 110a. As shown in the top view of FIG. 2J, and the support layer 140a extends from the middle edge of the electronic component ED to the middle edge of the adjacent electronic component ED, the embodiment is not limited thereto. As shown in Fig. 2J', the support layer 140a may also be connected to a corner of an adjacent electronic component ED. However, this embodiment does not limit that the support layer 140a must be connected to the adjacent electronic component ED. For example, the support layer 140a for supporting the electronic component ED may be separated from each other, as shown in FIG. 2J and FIG. 2J'' Show.

Referring to FIG. 2K, the adhesive pattern 110a is removed to form a pitch G between each of the electronic components ED and the first substrate S1. Since the support layer 140a actually supports the electronic component ED, the electronic component ED is not The first substrate S1 is in contact.

Referring to FIG. 2L, a portion of the electronic component ED is selectively picked up from the first substrate S1 by a magnetic force generated by an electronically-programmable magnetic transfer module 200. The electronic-programmable magnetic transfer module 200 of the present disclosure will be described in detail in FIG.

It should be noted that the magnetic force generated by the electronic-programmable magnetic transfer module 200 should be related to the magnetic portion 130. The magnetic force generated by the electronic-programmable magnetic transfer module 200 must be greater than the weight of an electronic component ED and The sum of the connection forces provided by the support layer 140a, in which case the electronic component ED can be separated from the first substrate S1 and can be picked up by the magnetic force generated by the electronically-programmable magnetic transfer module 200. .

Referring to FIG. 2M, a portion of the electronic components ED picked up by the electronically-programmable magnetic transfer module 200 are transferred to a second substrate S2. In this embodiment, the second substrate S2 has a plurality of conductive bumps B, and the electronic component ED picked up by the electronically-programmable magnetic transfer module 200 is transferred to the second substrate through the conductive bumps B. On S2. During the transfer process, a heating process may be performed to enable the electronic component ED to be successfully bonded to the second substrate S2.

Referring to FIG. 2N, the sacrificial layer pattern 120a located on the electronic component ED that has been transferred to the second substrate S2 is then removed. It should be noted that before the sacrificial layer pattern 120a is removed, the transfer operation of the electronic component ED has been initially completed, so the aforementioned removal operation of the sacrificial layer pattern 120a may be an optional step.

In the process of transferring the electronic component ED picked up by the electronic-programmable magnetic transfer module 200 to the second substrate S2, an in-situ testing of the electronic component ED is performed to inspect the electronic component ED and the first Whether the bonding or electrical connection between the two substrates S2 is flawed. Here, the aforementioned instant test is performed by the electronic-programmable magnetic transfer module 200. When the instant test detects at least one failed electronic component ED, the failed electronic component ED is separated from the second substrate S2, and the position information of the failed electronic component ED is recorded. Then, according to the foregoing location information, the electronically-programmable magnetic transfer module 200 picks up and re-shifts at least one remaining electronic component ED (shown in FIG. 2K) on the first substrate S1 to the second On the substrate S2. In other words, the failed electronic component ED can be replaced by a new electronic component ED by a further transfer process.

3 is a cross-sectional view of an electronic-programmable magnetic transfer module according to an embodiment of the present application. Referring to FIG. 3, the electronic-programmable magnetic transfer module 200 includes a micro An electromechanical system (MEMS) wafer 210 and a bonding device 220, the microelectromechanical system wafer 210 includes a plurality of electromagnetic coils 212, and each of the electromagnetic coils 212 is individually controllable through a plurality of corresponding control lines. Specifically, each electromagnetic coil 212 is electrically connected to a pair of mutually interleaved control lines, and each electromagnetic coil 212 can be enabled or disabled through the pair of control lines. Therefore, the aforementioned electromagnetic coil 212 can be electrically addressable by an electrical signal. The MEMS wafer 210 is assembled on the bonding apparatus 220 and carried by the bonding apparatus 220. In the present embodiment, the bonding device 220 is, for example, a flip chip bonder that has been used in the industry. In other words, the MEMS wafer 210 in the electronic-programmable magnetic transfer module 200 is compatible with flip chip splicers that are currently used in the industry. In the present embodiment, the MEMS wafer 210 may further include a plurality of ferromagnetic metal elements 214, wherein each ferromagnetic metal element 214 is selectively configurable within a space surrounded by one of the electromagnetic coils 212. For example, the material of the ferromagnetic metal member 214 is, for example, nickel, nickel-iron alloy or other suitable ferromagnetic metal having a high magnetic permeability.

As shown in FIG. 3, the MEMS wafer 210 includes a plurality of arrays of protrusions P, and the protrusions P are adapted to be in contact with a plurality of electronic components ED arranged on the first substrate S1, and each of the electromagnetic coils 212 and the electromagnetic coils The ferromagnetic metal members 214 surrounded by 212 are respectively disposed in one of the protrusions P. Each electromagnetic coil 212 includes a multilayer electromagnetic coil. Further, the arrangement pitch between the electromagnetic coils 212 is, for example, between 1 micrometer (μm) and 100 micrometers (μm). It should be noted that the electromagnetic coils 212 of the present embodiment are arranged in a specific regular manner, and the arrangement pitch of the electromagnetic coils 212 may be uniform or inconsistent, and the average arrangement pitch of the electromagnetic coils 212 is, for example, an electronic component ED (positioned on the first substrate) S1 An integer multiple of the arrangement pitch of the above). Further, the size (i.e., coverage) of the protrusions P may be, for example, greater than or equal to the size (i.e., area) of the electronic component ED to prevent the electronic component ED from being damaged by stress during the transfer process. In other words, in the case where the protrusion P is aligned with the electronic component ED, the electronic component ED is completely covered by the protrusion P. Of course, the size (coverage) of the protrusion P may be smaller than the size of the electronic component ED according to actual design requirements.

The aforementioned MEMS wafer 210 including the electromagnetic coil 212 and the ferromagnetic metal component 214 can be fabricated using a semiconductor process. The detailed fabrication flow of the MEMS wafer 210 will be described in detail with reference to Figures 4A through 4E.

4A to 4E are schematic cross-sectional views showing a manufacturing process of a MEMS wafer of the present application. Referring to FIG. 4A, a substrate S is provided, and the foregoing plurality of electromagnetic coils 212 have been formed on the substrate S (only one electromagnetic coil 212 is illustrated as an example in FIGS. 4A to 4E). For example, the electromagnetic coil 212 of the embodiment includes at least one dielectric film 212a, at least one conductive film 212b, and a plurality of conductive vias 212c, wherein the dielectric film 212a and the conductive film 212b are alternately stacked on the substrate S. The conductive via 212c is formed in the dielectric film 212a and electrically connected to the adjacent two conductive films 212b. In other words, the electromagnetic coil 212 of the present embodiment employs a so-called three-dimensional coil design, and the three-dimensional coil composed of the conductive film 212b and the conductive through-hole 212c is, for example, spiral-shaped as shown in Fig. 4A'. The dielectric film 212a, the conductive film 212b, and the plurality of conductive vias 212c are formed by, for example, thin film deposition, lithography, and etching processes. The conductive film 212b and the plurality of conductive through holes 212c constitute a coil portion in the electromagnetic coil 212, and the conductive film 212b and the plurality of conductive through holes 212c are made of, for example, a highly conductive material. The dielectric film 212a protects the coil portions in the different electromagnetic coils 212 from being short-circuited to each other. in In this embodiment, the number of layers of the conductive film 212b is, for example, 1 layer, 2 layers, 3 layers or more, and the number of layers of the dielectric film 212a is, for example, 1 layer, 2 layers, 3 layers or more.

Referring to FIG. 4B and FIG. 4C, a portion of the dielectric film 212a is removed to form a plurality of openings OP in the dielectric film 212a (FIG. 4B and FIG. 4C only illustrate one opening OP as an example), and the opening OP is corresponding. The conductive film 212b in the electromagnetic coil 212 is surrounded. For example, the foregoing substrate S is exposed by the opening OP, but the embodiment is not limited thereto. Next, a ferromagnetic metal member 214 is formed in the opening OP. In the present embodiment, the ferromagnetic metal member 214 is made of, for example, a highly magnetically permeable material. The material of the ferromagnetic metal member 214 is, for example, nickel, nickel-iron alloy or other suitable ferromagnetic metal having a high magnetic permeability.

Referring to FIGS. 4D and 4E, after forming the ferromagnetic metal member 214, a cap dielectric film 216 is formed to cover the ferromagnetic metal member 214 and the electromagnetic coil 212. Thereafter, the top dielectric film 216 and the dielectric film 212a are patterned to form protrusions P on the MEMS wafer 210. So far, the fabrication of the MEMS wafer 210 has been substantially completed. In the present embodiment, the material of the top dielectric film 216 is, for example, yttrium oxide, tantalum nitride or other non-conductive high molecular polymer.

Second embodiment

5 is a block diagram of the control system of the electronic-programmable magnetic transfer module of FIG. Referring to FIG. 5, the control system 300 of the present embodiment includes a computer 310, an electronic control unit 320, a mechanism control unit 330, and a heating control unit 340, wherein the electronic control unit 320, the mechanism control unit 330, and the heating control unit 340 are both Electrically connected to computer 310. For example, the computer 310 and the electronic control list of the embodiment Element 320 is used to control the operation of MEMS wafer 210 (e.g., selective pick-up of electronic components, instant testing, etc.). The computer 310 and the mechanism control unit 330 of this embodiment are used to control the movement of the bonding device 220 (shown in FIG. 3). In addition, the computer 310 and the heating control unit 340 of the present embodiment are used to control parameters of the heating process during the transfer process.

Third embodiment

6A to 6K are schematic cross-sectional views showing a method of transferring an electronic component according to a second embodiment of the present application.

Referring to FIG. 6A to FIG. 6K, the method for transferring the electronic component of the present embodiment is similar to that of the first embodiment except that the fabrication of the sacrificial layer 120 in the first embodiment can be omitted. Specifically, after the photo-semiconductor layer 100 is bonded to the first substrate S1 through the adhesive 110, since the electrode 102 of the present embodiment is a magnetic electrode, the sacrificial layer 120 and the magnetic layer are not required to be formed on the surface 100a of the optoelectronic semiconductor layer 100. After the portion 130, the optoelectronic semiconductor layer 100 and the adhesive 110 are patterned to form the electronic component ED and a plurality of adhesive patterns 110a (shown in FIG. 6F) under the electronic component ED. After the formation of the electronic component ED, the subsequent processes in FIGS. 6G to 6K are substantially the same as the processes in FIGS. 2I to 2M.

In the above embodiments of the present disclosure, since the magnetic transfer method can handle smaller electronic components (for example, less than 100 micrometers), the technical bottleneck of the single-chip microdisplay can be easily solved, and further, due to the electronic-programmable The MEMS wafer of the magnetic transfer module is compatible with the current flip chip bonder, so the electronic-programmable magnetic transfer module can be easily introduced into the flip chip bonding process to make the transfer of electronic components more efficient. .

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

200‧‧‧Electronic-programmable magnetic transfer module

210‧‧‧Microelectromechanical system wafer

212‧‧‧Electromagnetic coil

214‧‧‧ Ferromagnetic metal components

220‧‧‧Joining equipment

P‧‧‧ Protrusion

Claims (15)

A method for transferring electronic components, comprising: (a) forming a plurality of array-arranged electronic components on a first substrate, each of the electronic components including a magnetic portion; and (b) an electronically-programmable magnetic transfer mode a magnetic force generated by the group selectively picking up portions of the electronic components from the first substrate; and (c) transferring a portion of the electronic components picked up by the electronically-programmable magnetic transfer module to On a second substrate. The method for transferring electronic components according to claim 1, further comprising: repeating steps (a) to (c) at least once to transfer electronic components formed on different first substrates to the second substrate on. The method for manufacturing an electronic component according to claim 1, wherein the method for fabricating the electronic component on the first substrate comprises: forming a photo-semiconductor layer on a growth substrate; forming a plurality of electrodes thereon On the optoelectronic semiconductor layer; bonding the optoelectronic semiconductor layer and the first substrate through an adhesive, wherein the adhesive bonds the electrodes and the optoelectronic semiconductor layer, and the adhesive is interposed between the optoelectronic semiconductor layer and the first substrate Removing the growth substrate to expose a surface of the optoelectronic semiconductor layer; forming a sacrificial layer on the surface of the optoelectronic semiconductor layer; forming the magnetic portion on the sacrificial layer; patterning the optoelectronic semiconductor layer, An adhesive and the sacrificial layer to form the electrons An element, a plurality of sacrificial layer patterns on the electronic components, and a plurality of adhesive patterns interposed between the electronic components and the first substrate; forming a support layer on the first substrate, wherein the support layer Between the electronic components and connecting the electronic components, the support layer exposes each of the adhesive patterns; and removing the adhesive patterns to form a spacing between each of the electronic components and the first substrate . The method for transferring an electronic component according to claim 3, further comprising: thinning the photovoltaic semiconductor layer after removing the grown substrate and before forming the sacrificial layer. The method for transferring electronic components according to claim 3, further comprising: removing the sacrificial layer patterns on the electronic components that have been transferred onto the second substrate. The method for manufacturing an electronic component according to claim 1, wherein the method for fabricating the electronic component on the first substrate comprises: forming a photo-semiconductor layer on a growth substrate; forming a plurality of electrodes thereon On the optoelectronic semiconductor layer; bonding the optoelectronic semiconductor layer and the first substrate through an adhesive, wherein the adhesive bonds the electrodes and the optoelectronic semiconductor layer, and the adhesive is interposed between the optoelectronic semiconductor layer and the first substrate Removing the growth substrate from the optoelectronic semiconductor layer; patterning the optoelectronic semiconductor layer and the adhesive to form the electronic components and a plurality of adhesive patterns under the electronic components; Forming a support layer on the first substrate, wherein the support layer is located between the electronic components and connecting the electronic components, the support layer exposing each of the adhesive patterns; and removing the adhesive patterns to A spacing is formed between each of the electronic components and the first substrate. The method for transferring an electronic component according to claim 6, further comprising: thinning the photo-semiconductor layer after removing the grown substrate and before patterning the photo-semiconductor layer. The method of transferring an electronic component according to claim 1, wherein the electronically-programmable magnetic transfer module comprises a plurality of electromagnetic coils, and each of the electromagnetic coils is individually controlled. The method for transferring electronic components according to claim 1, wherein the electronically-programmable magnetic transfer module comprises: a microelectromechanical system (MEMS) wafer comprising a plurality of electromagnetic coils, and each of the electromagnetic coils is Separately controlled; and a bonding apparatus, wherein the MEMS wafer is assembled on and carried by the bonding apparatus. The method for transferring electronic components according to claim 1, further comprising: during the transfer of the electronic components picked up by the electronically-programmable magnetic transfer module to the second substrate, These electronic components perform an instant test. The method for transferring electronic components according to claim 10, further comprising: when the instant test detects at least one failed electronic component, the failed electronic component Separating from the second substrate, and recording a position information of the failed electronic component; and, according to the position information, picking up and transferring at least one remaining portion on the first substrate by the electronically-programmable magnetic transfer module Electronic components are on the second substrate. An electronic-programmable magnetic transfer module comprising: a microelectromechanical system (MEMS) wafer comprising a plurality of electromagnetic coils, each of the electromagnetic coils being individually controlled; and a bonding device, wherein the MEMS wafer It is assembled on the bonding apparatus and carried by the bonding apparatus. The electronically-programmable magnetic transfer module of claim 12, wherein the MEMS wafer comprises a plurality of arrays of protrusions, the protrusions being adapted to be aligned with a plurality of first substrates The electronic components are in contact, and each of the electromagnetic coils is disposed in one of the protrusions. The electronically-programmable magnetic transfer module of claim 12, wherein each of the electromagnetic coils comprises a multilayer electromagnetic coil. The electronically-programmable magnetic transfer module of claim 12, wherein the electromagnetic coils have an arrangement pitch of between 1 micrometer and 100 micrometers.