TW201620031A - Substrate processing method, substrate processing apparatus and application the same - Google Patents

Abstract

Provided is a substrate processing method which is adapted to a substrate after a developing process. A liquid is continued provided on the substrate by using a first nozzle. There is a contact angle between the liquid and the substrate. A gas is continued provided in the liquid by using the second nozzle, which remove a part of the liquid and expose a surface of part of the substrate. The first nozzle is extended along a first direction; while the second nozzle is extended along a second direction. The first direction is different from the second direction. The contact angel between the liquid and the substrate is changed by the gas, and the liquid is removed.

Description

Substrate processing method, substrate processing device and application thereof

The present invention relates to a substrate processing method and a processing apparatus thereof, and more particularly to a substrate processing method for a photoresist developing machine and a processing apparatus therefor.

Photolithography is an important step in the process of semiconductor components. It can form the desired pattern structure on the photoresist by the exposure and development process, and then transfer the pattern on the photoresist to the desired substrate by an etching process. on.

In the actual production process, after the exposure of the photoresist to the acid-base neutralization reaction with the developer, if some of the photoresist or developer remains in the area where no photoresist protection is required, it will affect the results of the subsequent etching process. . As the critical dimensions of semiconductor components become smaller and smaller, the residual photoresist or developer will have an adverse effect on subsequent etching processes. Therefore, how to completely remove unwanted photoresist or developer after the development process will become one of the important issues in the future.

The invention provides a substrate processing method and a processing device thereof, which can reduce defects on the surface of the substrate after the development process, thereby improving the cleanliness of the surface of the substrate after the development process.

The present invention provides a substrate processing method for developing a substrate after the process, the steps of which are as follows. The liquid is continuously supplied to the substrate using the first nozzle. The liquid has a contact angle with the substrate. The second nozzle is used to continuously supply gas to the liquid, and a portion of the liquid is removed to expose a portion of the surface of the substrate. The first nozzle extends in a first direction; the second nozzle extends in a second direction. The first direction is different from the second direction. The liquid is moved along by providing the above gas to change the contact angle of the liquid.

In an embodiment of the invention, when the gas is continuously supplied in the liquid, the substrate is further rotated.

In an embodiment of the invention, the first nozzle and the second nozzle form a dual nozzle robot arm. The dual nozzle robot moves in the axial direction such that the liquid also moves in the axial direction.

In an embodiment of the invention, the first direction and the second direction are at a first angle, and the first angle is 0 degrees to 12 degrees.

In an embodiment of the invention, the liquid comprises deionized water (DIW), isopropanol, acetone, ethanol or a combination thereof.

In an embodiment of the invention, the gas comprises nitrogen, helium, argon, compressed dry air, or a combination thereof.

The present invention provides a substrate processing apparatus including a susceptor and a dual nozzle robot arm. The substrate is placed on the substrate stage and rotated. The dual nozzle robot is located above the base and moves in the axial direction. The dual nozzle robot includes a first nozzle and a second nozzle. The first nozzle extends along the first direction and continues to provide liquid onto the substrate. The second nozzle extends in the second direction. The second nozzle continuously supplies a gas to the liquid to remove a portion of the liquid to expose a portion of the surface of the substrate. The axial direction, the first direction, and the second direction are different.

In an embodiment of the invention, the first direction and the second direction are at a first angle, and the first angle is 0 degrees to 12 degrees.

The present invention provides a photoresist developing machine including the above substrate processing apparatus. The photoresist developing machine includes a developer nozzle disposed above the base. It provides a developer onto the substrate on the susceptor. The substrate processing apparatus is for cleaning a developer remaining on a substrate.

In an embodiment of the invention, the liquid comprises deionized water, isopropanol, acetone, ethanol or a combination thereof. The above gases include nitrogen, helium, argon, compressed dry air or a combination thereof.

Based on the above, the present invention utilizes a second nozzle to continuously supply gas to the liquid continuously supplied by the first nozzle, removing a portion of the liquid to expose a portion of the surface of the substrate. In this way, the continuously supplied gas can drive the liquid to the edge of the substrate to completely remove the developer, photoresist or other defects remaining on the substrate, and improve the cleanliness of the surface of the substrate after the development process.

The above described features and advantages of the invention will be apparent from the following description.

FIG. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the invention. 2A is a front elevational view of a portion P of FIG. 1. 2B is a side view showing a portion P of FIG. 1.

Referring to FIG. 1, a substrate processing apparatus of the present invention includes a susceptor 10 and a dual nozzle robot arm 13. A dual nozzle robot 13 is positioned above the base 10 to provide the desired liquid or gas to the substrate W on the base 10. More specifically, the base 10 includes a platform 11 and a rotating shaft 12. The substrate W can be disposed on the platform 11 to maintain a horizontal state. The rotating shaft 12 is located below the platform 11, which is used to rotate the platform 11, and causes the substrate W on the platform 11 to also rotate with it.

The dual nozzle base robot arm 13 includes a robot arm 14, a first nozzle 16a, a first nozzle 16b, and a second nozzle 18. In detail, the robot arm 14 may include a connecting portion 14a, a moving portion 14b, a rotating portion 14c, and a driving portion 14d. The connecting portion 14a and the moving portion 14b are located above the platform 11, wherein the connecting portion 14a is located at one end of the moving portion 14b and is connected to the first nozzle 16a, the first nozzle 16b, and the second nozzle 18. The rotating portion 14c and the driving portion 14d are located on one side of the stage 11. The rotating portion 14c is connected to the other end of the moving portion 14b. The driving portion 14d is configured to drive the rotating portion 14c to rotate, so that the moving portion 14b and the first nozzle 16a, the first nozzle 16b, and the second nozzle 18 connected to the connecting portion 14a move in the axial direction D _a . Overall, the robot arm 14 including the connecting portion 14a, the moving portion 14b, the rotating portion 14c, and the driving portion 14d assumes the shape of an Arabic numeral 7. However, the present invention is not limited thereto, as long as the moving portion 14b and the first nozzle 16a, the first nozzle 16b, and the second nozzle 18 connected to the connecting portion 14a are moved in the axial direction D _a , and the connecting portion 14a The shape of the robot arm 14 constituted by the moving portion 14b, the rotating portion 14c, and the driving portion 14d is not limited.

Referring to FIG. 1 , FIG. 2A and FIG. 2B simultaneously, the first nozzle 16 a , the first nozzle 16 b and the second nozzle 18 are connected to the connecting portion 14 a. The connecting portion 14a includes a connecting member 20a, a connecting member 20b, a fixing member 21, and a connecting member 22. The fixing member 21 is located between the connecting members 20a, 20b, 22 for fixing the connecting members 20a, 20b, 22 to the fixing member 21. The fixing member 21 is coupled to the moving portion 14b (not shown), and when the robot arm 14 is moved in the axial direction D _a , the first nozzle 16 a , the first nozzle 16 _b , and the second nozzle 18 are also moved. In detail, FIG. 2A, the first nozzle 16a is connected to the connecting member 20a in FIG. _{2B. 1} and extends along a first direction D; a first nozzle 16b is connected to the connecting member 20b and extending in the third direction D ₃ And the second nozzle 18 is connected to the connecting member 22 and extends along the second direction D ₂ . The first direction D ₁ and the second direction D ₂ sandwich the first angle θ ₁ ; and the third direction D ₃ and the second direction D ₂ sandwich the second angle θ ₂ . The first angle θ ₁ and the second angle θ ₂ can be adjusted by screws 23 and 24, respectively. Since the substrate processing apparatus of the present embodiment can be applied to the machine of the even-numbered process unit, the first nozzle 16a and the first nozzle 16b are left-right symmetric and functionally identical members, and the same process steps can be performed separately. However, the present invention is not limited thereto. In other embodiments, the substrate processing apparatus of the present invention can also be applied to a machine of an odd number of process units, that is, the substrate processing apparatus of the present invention can have at least one first nozzle 16a. In addition, FIG. 2A shows three screws 23 and three screws 24 respectively. However, those skilled in the art should understand that the number and configuration of the screws 23 and 24 can be varied according to various needs, and the designer can use the application according to the actual application. The screws are added or removed as needed, and the present invention is not limited thereto. Further, although the present embodiment is exemplified by a screw, the present invention is also applicable to other fixing members such as a cassette or a rivet or the like.

In an embodiment, the first angle θ ₁ is from 0 degrees to 12 degrees; and the second angle θ ₂ is from 0 degrees to 12 degrees. The first nozzle 16a and the second nozzle 18 sandwich a first angle θ ₁ , and the first nozzle 16a and the second nozzle 18 are separated by a distance D ₁₂ . This distance D ₁₂ can be adjusted by the length of the first nozzle 16a and the second nozzle 18 and the magnitude of the first angle θ1. For example, the longer the length of the first nozzle 16a and the second nozzle 18, and the larger the angle of the first angle θ1, the greater the distance from the distance D ₁₂ . In an embodiment, the distance D ₁₂ is from 1.5 cm to 4.5 cm. In this way, the present invention can solve the problem that the distance between the first nozzle 16a and the second nozzle 18 is too close, resulting in insufficient cleaning of the surface of the substrate W. Similarly, the first nozzle 16b and the second nozzle 18 are also as described above, and the detailed method thereof will be described in the following paragraphs, and thus will not be described again.

In the present embodiment, the substrate processing apparatus of the present invention can be used for a photoresist developing machine. However, the present invention is not limited thereto. In other embodiments, the substrate processing apparatus can also be used for any machine that needs to clean or process the surface of the substrate. The following will be described by taking a photoresist developing machine as an example. The following embodiments are all described with the first nozzle 16a. Those skilled in the art should understand that the first nozzle 16b also has the same structure and function, and will not be described again.

3A-3C are cross-sectional views showing the flow of a photoresist development step in accordance with an embodiment of the present invention. 4A-4B are schematic diagrams showing operations of a substrate processing method according to an embodiment of the invention.

Referring to FIG. 3A, the substrate W is placed on the stage 11 to maintain a horizontal state. The substrate W has a patterned photoresist layer 100, wherein the patterned photoresist layer 100 can be formed, for example, by using an electron beam to pattern a photoresist material layer (not shown) on the substrate W. It is well known to those of ordinary skill in the art and will not be described here. Then, the developer 110 is supplied onto the substrate W by the developer nozzle 26 so that the developer 110 covers the surface of the patterned photoresist layer 100 to perform the developing step. The developing step is performed after the acid-base neutralization reaction is performed by the developer 110 and the patterned photoresist layer 100 to cause the pattern to be transferred to appear on the patterned photoresist layer 100.

Referring to FIG. 3B, the rotating shaft 12 below the platform 11 is used to rotate the platform 11 so that the developer 110 on the substrate W is spin-dried. In an embodiment, the rotational speed of the rotating shaft 12 is from 1000 rpm to 2000 rpm.

Referring to FIG. 3C, when the stage 11 is rotated, the developer 110 remaining on the substrate W can be simultaneously cleaned, and the steps are as follows. First, the liquid L is continuously supplied onto the substrate W by the first nozzle 16a. The liquid L has a contact angle θ _c1 with the substrate W as shown in Fig. 4A. The contact angle herein refers to an angle at which the gas-liquid interface of the surface of the liquid L contacts the surface of the substrate W, wherein the larger the contact angle θ _c1 is, the higher the hydrophobicity is. The first nozzle 16a is coupled to the robot arm 14. The robot arm 14 is located above the platform 11 and moves along the axial direction D _a . It is to be noted that the first nozzle 16a and the first nozzle 16b may be selectively performed during the photoresist development step of the embodiment. In the present embodiment, both the first nozzle 16a and the first nozzle 16b have the function of providing the liquid L. In an embodiment, the liquid L comprises deionized water, isopropanol, acetone, ethanol, or a combination thereof. The first nozzle 16a has a diameter of 5 mm to 6 mm and provides a liquid flow rate of 250 ml/min to 350 ml/min. Similarly, the first nozzle 16b has a diameter of 5 mm to 6 mm, which provides a liquid flow rate of 250 ml/min to 350 ml/min.

Next, the gas G is continuously supplied to the liquid L by the second nozzle 18. The second nozzle 18 is also coupled to the robot arm 14. Referring to Figure 4B, the gas G L damage the surface tension of the liquid, the surface portion of the substrate W is exposed to the liquid L into the liquid separator and the _{liquid. 1} L L _2. However, the present invention is not limited thereto. In other embodiments, the first nozzle 16a and the second nozzle 18 may simultaneously supply the liquid L and the gas G, respectively. On the other hand, in the above view, a portion of the liquid L in the region below the second nozzle 18 is removed by the gas G, and concentric circles (not shown) of the gas G are formed in the liquid L. As shown in FIG. 4B, the liquid L ₁ and the liquid L ₂ have a contact angle θ _c2 with the substrate W, wherein the contact angle θ _{c2 is} greater than the contact angle θ _c1 . Therefore, when the dual nozzle robot arm 13 moves in the axial direction D _a , the gas G easily drives the liquid L ₁ or the liquid L ₂ to the edge of the substrate W, so that the developer 110 remaining on the substrate W follows the liquid L ₁ Or the liquid L ₂ is removed at the same time. In other words, the present embodiment can continuously provide a force perpendicular to the substrate W by the second nozzle 18, which has the effect of changing the contact angle θ _c1 such that the liquid L ₁ or the liquid L ₂ easily moves to the edge of the substrate W. Therefore, when the dual nozzle robot 13 provides the force in the axial direction D _a and the rotating shaft 12 rotates the platform 11 to provide centrifugal force, the liquid L ₁ or the liquid L ₂ can be removed to achieve the effect of cleaning the substrate W. In an embodiment, the gas G comprises nitrogen, helium, argon, compressed dry air, or a combination thereof. However, the present invention is not limited thereto, and in other embodiments, a gas which does not react with the liquid L described above may be used. The second nozzle 18 has a diameter of 1 mm to 2 mm and provides a gas G with a pressure of 0.3 to 0.5 kpa. In the present embodiment, the pressure of the second nozzle 18 to supply the gas G can be fixed to 0.4 kpa, but the invention is not limited thereto. Further, the time during which the gas G can be continuously supplied is, for example, 10 seconds to 16 seconds. It is worth mentioning, as shown in FIG. 2A and FIG. 2B, 16a D ₁ of the present invention the first nozzle extends along a first direction; a first nozzle 16b extending in the third direction D _3; and a second nozzle 18 along The second direction D ₂ extends. The first direction D ₁ and the second direction D ₂ sandwich the first angle θ ₁ , and the first nozzle 16 a and the second nozzle 18 have a distance D ₁₂ . This distance D ₁₂ can solve the problem that when the first nozzle is too close to the second nozzle, the second nozzle cannot continuously supply the gas, resulting in insufficient cleaning of the substrate surface. In other words, since the first nozzle 16a of the present invention and the second nozzle 18 have a distance D ₁₂ , the second nozzle 18 can continuously supply the gas G. In this way, the continuously supplied gas G is sufficient to immediately remove a portion of the liquid L in the region below the second nozzle 18. Therefore, the continuously supplied gas G can drive the liquid L to the edge of the substrate W to completely remove the developer 110 remaining on the substrate W, and improve the cleanliness of the surface of the substrate W after the development process.

In addition, as the distance D ₁₂ between the first nozzle 16a and the second nozzle 18 is larger (that is, the angle of the first angle θ ₁ is larger), the flow rate of the liquid L continuously supplied by the first nozzle 16a may also increase. . When the flow rate of the liquid L is continuously supplied, the cleanliness of the surface of the substrate W can also be increased. The distance between the first nozzle 16a and the second nozzle 18 (i.e., the angle of the first angle θ ₁ ) can be adjusted by the screw 23, whereby the flow rate of the liquid L continuously supplied by the first nozzle 16a can also be adjusted.

Experimental example

In this experimental example, deionized water was continuously supplied to the substrate using the first nozzle. Next, nitrogen gas was continuously supplied to the deionized water for a further 11 seconds using the second nozzle, thereby removing defects remaining on the substrate. Then, after performing the above substrate processing method, the number of defects on the surface of the substrate was examined, and the results are shown in Table 1.

Comparative example 1

In Comparative Example 1, deionized water was continuously supplied to the substrate using the first nozzle, but nitrogen was not supplied by the second nozzle. Then, after performing the above substrate processing method, the number of defects on the surface of the substrate was examined, and the results are shown in Table 1.

Comparative example 2

In Comparative Example 2, deionized water was continuously supplied to the substrate using the first nozzle. Next, a second nozzle is used to provide a nitrogen gas in the deionized water for about 0.5 seconds to 0.6 seconds, after which no more nitrogen is supplied. Then, after performing the above substrate processing method, the number of defects on the surface of the substrate was examined, and the results are shown in Table 1.

Table 1

Referring to Table 1, after the substrate was processed according to the substrate processing methods of Experimental Example, Comparative Example 1, and Comparative Example 2, the number of defects of the examples was much smaller than that of Comparative Example 1 and Comparative Example 2. From this, it is understood that the substrate processing method of the embodiment has better cleanliness of the substrate surface than Comparative Example 1 and Comparative Example 2 to improve the reliability of the product.

In summary, since the first nozzle of the present invention has a distance between the second nozzle and the second nozzle, the second nozzle can continuously supply gas to the liquid continuously supplied by the first nozzle. In this way, the gas provided by the second nozzle can not only remove part of the liquid in the area under the second nozzle, but also continuously supply the gas to drive the liquid to the edge of the substrate to completely remove the developer remaining on the substrate, A photoresist or other defect that improves the cleanliness of the substrate surface after the development process. In addition, the distance between the first nozzle and the second nozzle is increased, and the flow rate of the liquid continuously supplied by the first nozzle is also increased, thereby enhancing the cleanliness of the surface of the substrate.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧ Pedestal
11‧‧‧ platform
12‧‧‧Rotary axis
13‧‧‧Double nozzle robot
14‧‧‧ Robotic arm
14a‧‧‧Connecting Department
14b‧‧‧Mobile Department
14c‧‧‧Rotating Department
14d‧‧‧Drive Department
16a, 16b‧‧‧ first nozzle
18‧‧‧second nozzle
20a, 20b, 22‧‧‧ connecting members
21‧‧‧Fixed components
23, 24‧‧‧ screws
26‧‧‧Developing fluid nozzle
100‧‧‧ patterned photoresist layer
110‧‧‧developer
D ₁ ‧‧‧First direction
D ₂ ‧‧‧second direction
D ₃ ‧‧‧ third direction
D ₁₂ ‧‧‧Distance
D _a ‧‧‧ axial direction
L, L ₁ , L ₂ ‧‧‧ liquid
Part P‧‧‧
W‧‧‧Substrate θ ₁ ‧‧‧First angle θ ₂ ‧‧‧Second angle θ _c1 , θ _c2 ‧‧‧ Contact angle

FIG. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the invention. 2A is a front elevational view of a portion P of FIG. 1. 2B is a side view showing a portion P of FIG. 1. 3A-3C are cross-sectional views showing the flow of a photoresist development step in accordance with an embodiment of the present invention. 4A-4B are schematic diagrams showing operations of a substrate processing method according to an embodiment of the invention.

10‧‧‧ Pedestal

11‧‧‧ platform

12‧‧‧Rotary axis

13‧‧‧Double nozzle robot

14‧‧‧ Robotic arm

14a‧‧‧Connecting Department

14b‧‧‧Mobile Department

14c‧‧‧Rotating Department

14d‧‧‧Drive Department

16a, 16b‧‧‧ first nozzle

18‧‧‧second nozzle

D _a ‧‧‧ axial direction

Part P‧‧‧

W‧‧‧Substrate

Claims (10)

A substrate processing method for developing a substrate after a process, the method comprising: continuously providing a liquid on the substrate by using a first nozzle, the liquid having a contact angle with the substrate, the first nozzle being along Extending a first direction; and continuously providing a gas in the liquid by using a second nozzle to remove a portion of the liquid to expose a portion of the surface of the substrate, the second nozzle extending along a second direction, wherein the first One direction is different from the second direction, and the liquid is moved by providing the gas to change the contact angle between the liquid and the substrate. The substrate processing method according to claim 1, wherein when the gas is continuously supplied in the liquid, the substrate is further rotated. The substrate processing method according to claim 1, wherein the first nozzle and the second nozzle form a double nozzle robot arm, and the double nozzle robot arm moves along an axial direction so that the liquid is also along This axial direction moves. The substrate processing method of claim 1, wherein the first direction and the second direction are at a first angle, and the first angle is 0 to 12 degrees. The substrate processing method of claim 1, wherein the liquid comprises deionized water, isopropanol, acetone, ethanol or a combination thereof. The substrate processing method of claim 1, wherein the gas comprises nitrogen, helium, argon, compressed dry air, or a combination thereof. A substrate processing apparatus comprising: a pedestal on which a substrate is disposed and rotated; and a pair of nozzle robot arms located above the pedestal and moving along an axial direction, the pair The nozzle robot arm includes: a first nozzle extending along a first direction and continuously providing a liquid on the substrate; and a second nozzle extending along a second direction and continuously supplying a gas to the liquid And removing a portion of the liquid to expose a portion of the surface of the substrate, wherein the axial direction, the first direction, and the second direction are different. The substrate processing apparatus of claim 7, wherein the first direction and the second direction are at a first angle, and the first angle is 0 to 12 degrees. A substrate processing apparatus according to any one of claims 7 to 8, wherein the photoresist developing machine comprises: a developer liquid nozzle disposed on the susceptor Above, a developer is provided on the substrate on the pedestal, wherein the substrate processing device is for cleaning the developer remaining on the substrate. The photoresist developing machine according to claim 9, wherein the liquid comprises deionized water, isopropanol, acetone, ethanol or a combination thereof, and the gas comprises nitrogen, helium, argon, compressed dry air. Or a combination thereof.