TW201628120A - Wafer carrier - Google Patents
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- TW201628120A TW201628120A TW104102808A TW104102808A TW201628120A TW 201628120 A TW201628120 A TW 201628120A TW 104102808 A TW104102808 A TW 104102808A TW 104102808 A TW104102808 A TW 104102808A TW 201628120 A TW201628120 A TW 201628120A
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Abstract
本發明揭露一種晶圓承載裝置用以承載複數晶圓以進行一半導體製程。此晶圓承載裝置包括一主動傳動模組、複數個從動轉盤模組、及一環狀齒輪元件。任一從動轉盤模組包含一轉盤元件及一齒輪環,且齒輪環或主動傳動模組具有一第一環形凹槽用以容置複數滾珠。環狀齒輪元件用以與部分齒輪環嚙合,藉由驅動主動傳動模組使位於轉盤元件上的晶圓相對於主動傳動模組的中心軸公轉並且相對於轉盤元件的中心軸自轉。藉由本裝置可使晶圓鍍膜厚度更佳均勻以提高半導體製程的良率。The present invention discloses a wafer carrier device for carrying a plurality of wafers for performing a semiconductor process. The wafer carrier device includes an active drive module, a plurality of driven turntable modules, and a ring gear member. Any of the driven turntable modules includes a turntable component and a gear ring, and the gear ring or the active drive module has a first annular groove for receiving the plurality of balls. The ring gear member is configured to mesh with a portion of the gear ring, and the wafer on the turntable member revolves relative to the central axis of the active drive module and rotates relative to the central axis of the turntable member by driving the active drive module. By using this device, the thickness of the wafer coating can be made uniform to improve the yield of the semiconductor process.
Description
本發明係有關於一種半導體製程設備,特別是關於一種晶圓承載裝置及其反應腔室。The present invention relates to a semiconductor process apparatus, and more particularly to a wafer carrier and a reaction chamber therefor.
在半導體製程中,氣相生長設備係使用各種不同來源氣體形成薄膜。其中化學氣相沉積(Chemical Vapor Deposition, CVD)是一種用來產生純度高、性能好的固態材料的化學技術。典型的CVD製程是將晶圓暴露在一種或多種不同的前驅物下,在晶圓表面發生化學反應或/及化學分解來產生欲沉積的薄膜。In semiconductor processes, vapor phase growth equipment uses a variety of gases from different sources to form a film. Among them, Chemical Vapor Deposition (CVD) is a chemical technique used to produce solid materials with high purity and good performance. A typical CVD process exposes a wafer to one or more different precursors, chemically and/or chemically decomposed on the surface of the wafer to produce a film to be deposited.
金屬有機化學氣相沈積(Metal Organic Chemical Vapor Deposition, MOCVD),為化學氣相沉積的一種,其於成長薄膜時,為將載流氣體(Carrier Gas)通過金屬有機反應源的容器,將反應源的飽和蒸氣輸送至反應腔中與其它反應氣體混合,並藉由加熱裝置控制待成長晶圓的加熱溫度,然後在待成長晶圓上面發生化學反應促成薄膜的成長。一般來說,MOCVD裝置包含腔室、配置於腔室內之承載基座以及用以使反應氣體流動至基板表面之管路。於MOCVD裝置中,係將晶圓載置於承載基座上,將晶圓加熱至適當之溫度,並經由管路將有機金屬之氣體導入至晶圓表面,藉此進行成膜製程。此處,為了使所形成之膜的厚度均勻,要求反應氣體於MOCVD裝置中沿著晶圓表面均勻地流動。以水平流式MOCVD裝置為例,當承載基座轉動時,設置於其上之晶圓也跟著向承載基座的中心軸轉動,為當載流氣體以特定水平流向外延時,存在特定的消耗現象(depletion),亦即,靠近承載基座內圈部分的晶圓其鍍膜厚度成長率較高;而靠近承載基座外圈的晶圓,其鍍膜厚度成長率較低,因此,以承載基座全盤面晶圓鍍膜厚度來說,鍍膜厚度將從內圈部分向外圈部分呈梯度降低的現象,即為消耗現象。此一鍍膜厚度梯度現象非為業界所能接受。一種現有裝置,包含一旋轉裝置,旋轉裝置設有一主動輪,一環體於內環壁設有內環齒,以及至少一齒輪為設置於環體之內環壁,齒輪囓合於主動輪與內環齒之間,承載盤固定於各齒輪上,其盤之周緣設有缺口以方便夾持晶圓片。利用馬達操縱主動輪轉動後,其環體設置為固定件,而盛放晶圓片的承載盤將因各齒輪與內環齒囓合之效應,達到齒輪相對於主動輪圓中心可為一公轉運行作用,同時各承載盤本身能因齒輪齒合於主動輪與內環齒間,作用下而成為公轉運行時同步為自轉功效。然而,此結構限制了其它元件的配置空間。因此如何開發出具有優良製程良率的設備,一直以來都為業界所思考的問題。Metal Organic Chemical Vapor Deposition (MOCVD) is a kind of chemical vapor deposition. When growing a thin film, it is a container for passing a carrier gas through a metal organic reaction source. The saturated vapor is sent to the reaction chamber to be mixed with other reaction gases, and the heating temperature of the wafer to be grown is controlled by the heating device, and then a chemical reaction occurs on the wafer to be grown to promote the growth of the film. Generally, an MOCVD apparatus includes a chamber, a carrier base disposed in the chamber, and a conduit for flowing a reactive gas to the surface of the substrate. In the MOCVD apparatus, a wafer is placed on a carrier base, the wafer is heated to an appropriate temperature, and a metal metal gas is introduced into the surface of the wafer via a pipeline, thereby performing a film formation process. Here, in order to make the thickness of the formed film uniform, it is required that the reaction gas uniformly flows along the wafer surface in the MOCVD apparatus. Taking the horizontal flow type MOCVD device as an example, when the carrier base rotates, the wafer disposed thereon also rotates toward the central axis of the carrier base, so that when the carrier gas flows outward at a certain level, there is a specific consumption. Depletion, that is, a wafer near the inner ring portion of the carrier base has a higher coating thickness growth rate; and a wafer near the outer circumference of the carrier substrate has a lower coating thickness growth rate, and therefore, a carrier base In terms of the thickness of the full-surface wafer coating, the thickness of the coating will decrease from the inner ring portion to the outer ring portion, which is a consumption phenomenon. This coating thickness gradient phenomenon is not acceptable in the industry. A conventional device includes a rotating device, the rotating device is provided with a driving wheel, a ring body is provided with inner ring teeth on the inner ring wall, and at least one gear is disposed on the inner ring wall of the ring body, and the gear meshes with the driving wheel and the inner ring Between the teeth, the carrier disk is fixed on each gear, and the periphery of the disk is provided with a notch to facilitate the clamping of the wafer. After the driving wheel is rotated by the motor, the ring body is set as a fixing member, and the carrier plate holding the wafer will be driven by the gears and the inner ring teeth to achieve a revolution of the gear with respect to the center of the driving wheel. At the same time, each carrier disk itself can be combined with the inner ring and the inner ring tooth due to the gear teeth, and becomes a self-rotating effect when the revolution is running. However, this structure limits the configuration space of other components. Therefore, how to develop equipment with excellent process yield has always been a problem for the industry.
本發明目的之一係提供一種晶圓承載裝置,藉由主動傳動模組的驅動,使得設置於轉盤元件上的晶圓可同時對著主動傳動模組的中心軸公轉並且分別朝轉盤元件的中心軸自轉,使晶圓鍍膜厚度更佳均勻以提高半導體製程的良率。One of the objects of the present invention is to provide a wafer carrier device, wherein the wafer disposed on the turntable component can be simultaneously rotated toward the center axis of the active drive module and respectively toward the center of the turntable component by driving the active drive module. The shaft rotates to make the thickness of the wafer coating more uniform to improve the yield of the semiconductor process.
本發明提供一種晶圓承載裝置,用以承載複數晶圓以進行一半導體製程,該晶圓承載裝置包括:一主動傳動模組、複數個從動轉盤模組及一環狀齒輪元件。主動傳動模組包含一板狀主體。複數個從動轉盤模組設置於板狀主體上,任一從動轉盤模組包含一轉盤元件及一齒輪環繞設於轉盤元件之一側壁,其中任一轉盤元件用以承載晶圓,且齒輪環與板狀主體其中之一具有一第一環形凹槽用以容置複數個滾珠。環狀齒輪元件設置於板狀主體外側,用以與齒輪環嚙合。藉由驅動主動傳動模組,進而帶動位於轉盤元件上的晶圓相對於主動傳動模組的中心軸公轉並且相對於轉盤元件的中心軸自轉。The present invention provides a wafer carrier device for carrying a plurality of wafers for performing a semiconductor process. The wafer carrier device includes: an active drive module, a plurality of driven turntable modules, and a ring gear member. The active drive module includes a plate-shaped body. A plurality of driven turntable modules are disposed on the plate-shaped main body, and any of the driven turntable modules includes a turntable component and a gear disposed around one side wall of the turntable component, wherein any of the turntable components is used to carry the wafer, and the gear One of the ring and the plate-shaped body has a first annular groove for receiving a plurality of balls. The ring gear member is disposed outside the plate body for engaging with the gear ring. By driving the active drive module, the wafer on the turntable component is revolved relative to the central axis of the active drive module and rotated relative to the central axis of the turntable component.
本以下藉由具體實施例配合所附的圖式詳加說明,當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。The purpose of the present invention, the technical contents, the features, and the effects achieved by the present invention will be more apparent from the detailed description of the embodiments.
本發明主要提供一種晶圓承載裝置,其係包括一主動傳動模組、複數個從動轉盤模組及一環狀齒輪元件,其中複數個從動轉盤模組又包含複數轉盤元件及複數個齒輪環,並藉由上述裝置使晶圓進行半導體製程時同時進行公轉及自轉,以使晶圓鍍膜厚度更佳均勻。以下將詳述本案的各實施例,並配合圖式作為例示。除了這些詳細描述之外,本發明還可以廣泛地施行在其他的實施例中,任何所述實施例的輕易替代、修改、等效變化都包含在本案的範圍內,並以之後的專利範圍為準。在說明書的描述中,為了使讀者對本發明有較完整的瞭解,提供了許多特定細節;然而,本發明可能在省略部分或全部這些特定細節的前提下,仍可實施。此外,眾所周知的步驟或元件並未描述於細節中,以避免造成本發明不必要之限制。圖式中相同或類似之元件將以相同或類似符號來表示。特別注意的是,圖式僅為示意之用,並非代表元件實際的尺寸或數量,不相關的細節未完全繪出,以求圖式的簡潔。The invention mainly provides a wafer carrying device, which comprises an active transmission module, a plurality of driven turntable modules and a ring gear component, wherein the plurality of driven turntable modules further comprise a plurality of turntable components and a plurality of gears The ring and the semiconductor device are simultaneously rotated and rotated by the above device to make the thickness of the wafer coating more uniform. The embodiments of the present invention will be described in detail below with reference to the drawings. In addition to the detailed description, the present invention may be widely practiced in other embodiments, and any alternatives, modifications, and equivalent variations of the described embodiments are included in the scope of the present invention, and the scope of the following patents is quasi. In the description of the specification, numerous specific details are set forth in the description of the invention. In addition, well-known steps or elements are not described in detail to avoid unnecessarily limiting the invention. The same or similar elements in the drawings will be denoted by the same or similar symbols. It is to be noted that the drawings are for illustrative purposes only and do not represent the actual dimensions or quantities of the components. The irrelevant details are not fully depicted in order to facilitate the simplicity of the drawings.
首先,請參考圖1A,圖1A為本發明一實施例之晶圓承載裝置的結構示意圖。如圖所示,一晶圓承載裝置1,其係用以承載複數晶圓W以於一反應腔室(圖中未示)中進行一半導體製程,於一實施例中半導體製程可為MOCVD製程,但不以此為限。此實施例之晶圓承載裝置1主要包含一主動傳動模組10、複數個從動轉盤模組11及一環狀齒輪元件12。其中主動傳動模組10包含一板狀主體101。複數個從動轉盤模組11係設置於板狀主體101上,任一從動轉盤模組11包含一轉盤元件111及一齒輪環112繞設於轉盤元件111之一側壁1111,其中轉盤元件111用以承載晶圓W,且齒輪環112與板狀主體101其中之一具有一第一環形凹槽用以容置複數個滾珠13。而環狀齒輪元件12設置於板狀主體101外側,用以與部分齒輪環112嚙合。藉由驅動主動傳動模組10,進而帶動位於轉盤元件111上的晶圓W相對於主動傳動模組10的中心軸X1 公轉並且相對於轉盤元件111的中心軸X2 自轉。其詳細結構分別描述於下。First, please refer to FIG. 1A. FIG. 1A is a schematic structural diagram of a wafer carrier device according to an embodiment of the present invention. As shown, a wafer carrier device 1 is configured to carry a plurality of wafers W for performing a semiconductor process in a reaction chamber (not shown). In one embodiment, the semiconductor process can be an MOCVD process. , but not limited to this. The wafer carrier device 1 of this embodiment mainly includes an active transmission module 10, a plurality of driven turntable modules 11 and a ring gear member 12. The active transmission module 10 includes a plate-shaped body 101. A plurality of driven turntable modules 11 are disposed on the plate-shaped main body 101. Any of the driven turntable modules 11 includes a turntable member 111 and a gear ring 112 disposed around one side wall 1111 of the turntable member 111. The turntable member 111 The wafer W is used to carry the wafer W, and one of the gear ring 112 and the plate-shaped body 101 has a first annular groove for accommodating a plurality of balls 13. The ring gear member 12 is disposed outside the plate-like body 101 for engaging with the partial gear ring 112. By driving the active transmission module 10, the wafer W on the turntable element 111 is driven to revolve relative to the central axis X 1 of the active drive module 10 and to rotate relative to the central axis X 2 of the turntable element 111. The detailed structure is described below.
接續上述,於一實施例中,說明第一環形凹槽的位置,如圖1B之實施例所示,第一環形凹槽131係設置於板狀主體101上,並位於板狀主體101與齒輪環112之間,用以限制滾珠13之位置。於又一實施例中,如圖1C所示,第一環型凹槽131亦可設置於齒輪環112之下表面。亦或者,在板狀主體101與齒輪環112之下表面皆設有環形凹槽,如圖1D之標號131及132所示,且上下凹槽位置相對,且可以理解的是,環形凹槽除可為一凹槽承座設置於板狀主體101與齒輪環112之下表面;其亦可為與板狀主體101或者與齒輪環112之下表面一體成形的槽溝。利用上下限位的方式以限制複數滾珠13的移動範圍,使滾珠13可平均地在上述凹槽結構中滾動,以減少滾珠13的平均磨耗。於上述實施例之圖式中,皆可看出,環形凹槽131、132之寬度皆大於滾珠13的直徑,使得滾珠13可以在環形凹槽131、132內自由滾動(亦參考示意圖圖1E)。可以理解的是,因滾珠13為隨意擺設,故於又一實施例中,滾珠13亦可如圖1F所示,緊密排列於環形凹槽131(132)之內。且不論是圖1E或者圖1F之實施例,環形凹槽之寬度d可大於滾珠13之直徑D,其中滾珠13之材質包含但不限於陶瓷。然而,於再一實施例中,如圖1G及圖1F所示,環形凹槽之寬度d亦可等於滾珠13之直徑D。Following the above, in one embodiment, the position of the first annular groove is illustrated. As shown in the embodiment of FIG. 1B, the first annular groove 131 is disposed on the plate-shaped body 101 and located in the plate-shaped body 101. Between the gear ring 112 and the gear ring 112, the position of the ball 13 is restricted. In another embodiment, as shown in FIG. 1C , the first annular groove 131 may also be disposed on the lower surface of the gear ring 112 . Or, an annular groove is provided on the lower surface of the plate-shaped main body 101 and the gear ring 112, as shown by reference numerals 131 and 132 in FIG. 1D, and the upper and lower grooves are opposite in position, and it can be understood that the annular groove is apart from A groove holder may be disposed on the lower surface of the plate-shaped body 101 and the gear ring 112; it may also be a groove integrally formed with the plate-shaped body 101 or the lower surface of the gear ring 112. The upper and lower limits are used to limit the range of movement of the plurality of balls 13, so that the balls 13 can roll evenly in the groove structure to reduce the average wear of the balls 13. In the drawings of the above embodiments, it can be seen that the widths of the annular grooves 131, 132 are larger than the diameter of the balls 13, so that the balls 13 can freely roll in the annular grooves 131, 132 (see also FIG. 1E). . It can be understood that, because the balls 13 are randomly arranged, in another embodiment, the balls 13 can also be closely arranged in the annular groove 131 (132) as shown in FIG. 1F. Regardless of the embodiment of FIG. 1E or FIG. 1F, the width d of the annular groove may be larger than the diameter D of the ball 13, wherein the material of the ball 13 includes, but is not limited to, ceramic. However, in still another embodiment, as shown in FIGS. 1G and 1F, the width d of the annular groove may also be equal to the diameter D of the ball 13.
接續,請參考圖2A,圖2A為本發明一實施例之晶圓承載裝置的結構的局部爆炸圖。如圖所示,主動傳動模組10主要為一板狀主體101,且板狀主體101包含複數個凹槽1012用以容置從動轉盤模組11,且齒輪環112的一部分齒部係穿出板狀主體101的側邊與環狀齒輪元件12嚙合。於一實施例中,主動傳動模組10由一中心轉軸模組14驅動,中心轉軸模組14與板狀主體101連接,用以帶動位於轉盤元件111上的晶圓W可同時對著主動傳動模組10的中心軸X1 公轉。於此實施例中,板狀主體101包含一中心通孔1011貫穿其中,其中一中心轉盤元件102設置於中心通孔1011內,並與板狀主體101嵌合。於一實施例中,中心通孔1011係貫穿板狀主體101的中心,而凹槽1012則圍繞中心通孔1011設置,較佳者,中心通孔1011的中心至上述凹槽1012之中心的距離係為等距。組裝後的局部放大示意圖如圖2B所示,中心轉盤元件102係容置於中心通孔1011內並與中心通孔1011嵌合,於一實施例中,中心轉盤元件102的上部具有嵌合機構1021以利與板狀主體101嵌合。Next, please refer to FIG. 2A. FIG. 2A is a partial exploded view showing the structure of a wafer carrying device according to an embodiment of the present invention. As shown in the figure, the active transmission module 10 is mainly a plate-shaped body 101, and the plate-shaped body 101 includes a plurality of grooves 1012 for accommodating the driven turntable module 11, and a part of the teeth of the gear ring 112 is worn. The side edges of the plate-like main body 101 are engaged with the ring gear member 12. In one embodiment, the active transmission module 10 is driven by a central rotating shaft module 14 , and the central rotating shaft module 14 is connected to the plate-shaped main body 101 for driving the wafer W on the rotating disk component 111 to simultaneously drive the active transmission. The central axis X 1 of the module 10 revolves. In this embodiment, the plate-shaped main body 101 includes a central through hole 1011 penetrating therein, and a center turntable member 102 is disposed in the center through hole 1011 and fitted into the plate-shaped main body 101. In one embodiment, the central through hole 1011 extends through the center of the plate-like body 101, and the groove 1012 is disposed around the central through hole 1011. Preferably, the distance from the center of the central through hole 1011 to the center of the groove 1012 The system is equidistant. A partially enlarged schematic view of the assembly, as shown in FIG. 2B, the center turntable member 102 is received in the central through hole 1011 and fitted into the central through hole 1011. In an embodiment, the upper portion of the center turntable member 102 has a fitting mechanism. 1021 is fitted to the plate-shaped main body 101.
承上,板狀主體101的其餘詳細結構繪示於圖3A及圖3B,於此實施例中,如圖3A所示,每一凹槽1012的內表面形成有開口漸縮的斷差,其中凹槽1012的內表面包括:一第一開口1012a位於凹槽1012的底部;一第二開口1012b位於第一開口1012a的上方,且第二開口1012b的直徑大於第一開口1012a的直徑;及一斷差部1012c形成於第一開口1012a與第二開口1012b之間。轉盤元件111設置於凹槽1012後,如圖3B 所示,凹槽1012與轉盤元件111之間具有一間隙G。於又一實施例中,凹槽1012係貫穿板狀主體101以形成複數通孔1012’,如圖3C所示,其餘結構可如同上述實施例,此即不再贅述。而第一環形凹槽131、132(繪示於圖3B、圖3E及圖3F)則形成於齒輪環112之下表面與斷差部1012c之間。The remaining detailed structure of the plate-shaped body 101 is shown in FIG. 3A and FIG. 3B. In this embodiment, as shown in FIG. 3A, the inner surface of each groove 1012 is formed with a taper with an opening tapered, wherein The inner surface of the recess 1012 includes a first opening 1012a at the bottom of the recess 1012, a second opening 1012b above the first opening 1012a, and a second opening 1012b having a diameter larger than the diameter of the first opening 1012a; The step portion 1012c is formed between the first opening 1012a and the second opening 1012b. The turntable member 111 is disposed behind the recess 1012. As shown in FIG. 3B, the recess 1012 has a gap G with the turntable member 111. In still another embodiment, the recess 1012 extends through the plate-like body 101 to form a plurality of through holes 1012', as shown in FIG. 3C, and the remaining structure can be the same as the above embodiment, which will not be described again. The first annular grooves 131, 132 (shown in FIGS. 3B, 3E, and 3F) are formed between the lower surface of the gear ring 112 and the step portion 1012c.
承上,而從動轉盤模組11包含轉盤元件111及設置於其側邊之齒輪環112,轉盤元件111組裝後係容置於凹槽1012內,於一實施例中,請繼續搭配參考圖3A、圖3B,圖3A為本發明一實施例之從動轉盤模組11的爆炸剖視圖;而圖3B為圖3A組立後的局部放大圖,如圖3A所示,轉盤元件111為一具有厚度的柱體用以承載晶圓W,其包括一頂面1112、一底面1113及環繞頂面1112與底面1113的側壁1111,其中底面1113與頂面1112係相對設置的,轉盤元件111係容置於凹槽1012中且其底面1113與板狀主體101之間具有間隙G(如圖3B所示),於又一實施例中,若凹槽為通孔1012’,則轉盤元件111的底面1113與板狀主體101的下表面1013齊平(如圖3D所示),以利下方加熱器加熱使溫度容易控制。可以理解的是,未貫通板狀主體101之凹槽1012可防止製程中具腐蝕性的氣體流動至板狀主體101,以降低板狀主體101下方之元件的損耗。如圖3A及圖3B所示,齒輪環112為中空狀,並固定於轉盤元件111接近頂面1112的側壁1111以做為幫助轉盤元件111轉動的技術手段,且組立後齒輪環112與板狀主體101之間具有一間隙G1 。於一實施例中,齒輪環112係以機構方式固定於轉盤元件111上,但不以此為限,齒輪環112亦可與轉盤元件111為單一零件所構成者。接續參考圖3B,於此實施例中,轉盤元件111具有一突出部1111a自其側壁1111向外突出且突出部1111a下方具有複數個孔1111b,而齒輪環112的內徑相對應於所述孔1111b的位置具有斷差1121,則利用複數柱體1114設置於孔1111b內與斷差1121處,使齒輪環112固定於轉盤元件111上,從而當齒輪環112受驅動時轉盤元件111可同時旋轉。The driven turntable module 11 includes a turntable component 111 and a gear ring 112 disposed on a side thereof. The turntable component 111 is assembled and placed in the recess 1012. In an embodiment, please continue to match the reference diagram. 3A, FIG. 3B, FIG. 3A is an exploded cross-sectional view of the driven carousel module 11 according to an embodiment of the present invention; and FIG. 3B is a partially enlarged view of the assembled body of FIG. 3A. As shown in FIG. 3A, the turntable member 111 has a thickness. The cylinder is used to carry the wafer W, and includes a top surface 1112, a bottom surface 1113, and sidewalls 1111 surrounding the top surface 1112 and the bottom surface 1113. The bottom surface 1113 is disposed opposite to the top surface 1112, and the turntable element 111 is received. In the groove 1012 and between the bottom surface 1113 and the plate-like body 101, there is a gap G (as shown in FIG. 3B). In still another embodiment, if the groove is the through hole 1012', the bottom surface 1113 of the turntable member 111 It is flush with the lower surface 1013 of the plate-like body 101 (as shown in FIG. 3D) to facilitate temperature control by heating the heater below. It can be understood that the groove 1012 that does not penetrate the plate-like body 101 can prevent the corrosive gas in the process from flowing to the plate-like body 101 to reduce the loss of components under the plate-shaped body 101. As shown in FIG. 3A and FIG. 3B, the gear ring 112 is hollow and fixed to the side wall 1111 of the turntable member 111 near the top surface 1112 as a technical means for assisting the rotation of the turntable member 111, and the rear gear ring 112 and the plate are assembled. There is a gap G 1 between the bodies 101. In one embodiment, the gear ring 112 is mechanically fixed to the turntable member 111. However, the gear ring 112 may be formed as a single component with the turntable member 111. Referring to FIG. 3B, in this embodiment, the turntable member 111 has a protrusion 1111a protruding outwardly from the side wall 1111 thereof and having a plurality of holes 1111b under the protrusion 1111a, and the inner diameter of the gear ring 112 corresponds to the hole. The position of 1111b has a gap 1121, and the plurality of cylinders 1114 are disposed in the hole 1111b and the gap 1121 to fix the gear ring 112 to the turntable member 111, so that the turntable member 111 can rotate simultaneously when the gear ring 112 is driven. .
再者,請再次參考圖2A及圖2B,中心轉軸模組14係以適當方式固定於中心轉盤元件102上並位於中心通孔1011內,使得中心轉軸模組14可與中心轉盤元件102、主動傳動模組10的板狀主體101同時連動,於一實施例中,中心轉盤元件102之下部具有一斜面1022,因此中心轉盤元件102透過斜面1022與中心轉軸模組14進行對心。本發明一實施例可藉由中心轉軸模組14驅動主動傳動模組10,使設置於轉盤元件111上的晶圓W可同時對著主動傳動模組10公轉並且分別朝轉盤元件111的中心軸自轉。Furthermore, referring again to FIG. 2A and FIG. 2B, the central hinge module 14 is fixed to the center turntable member 102 in a suitable manner and located in the center through hole 1011, so that the central hinge module 14 can be activated with the center turntable member 102. The plate-shaped main body 101 of the transmission module 10 is simultaneously interlocked. In one embodiment, the lower portion of the center turntable member 102 has a slope 1022, so that the center turntable member 102 is centered with the center shaft module 14 through the slope 1022. In one embodiment of the present invention, the active drive module 10 can be driven by the central rotating shaft module 14 so that the wafer W disposed on the turntable component 111 can simultaneously revolve against the active drive module 10 and respectively toward the central axis of the turntable component 111. rotation.
接續上述說明,於一實施例中,指定由中心轉軸模組14驅動主動傳動模組10而環狀齒輪元件12為固定不轉動,則當中心轉軸模組14驅動中心轉盤元件102轉動時,從動轉盤模組11受中心轉盤元件102驅使而進行公轉,從而從動轉盤模組11之齒輪環112可藉由與固定的環狀齒輪元件12囓合傳動而自轉。於又一實施例中,晶圓承載裝置更包含一轉子模組15,設置於環狀齒輪元件12下方,用以驅動環狀齒輪元件12,其中轉子模組15與主動傳動模組10的驅動速度可不同,使從動轉盤模組11的公轉與自轉的速度不同。簡言之,公轉速度以及自轉速度皆可依需求分別進行控制。此晶圓承載裝置1可於半導體製程時,使晶圓W同時公轉與自轉,以有效抵銷消耗現象,進而製程時溫度的均勻性及鍍膜層厚度的均勻性皆可以有效提升。Following the above description, in an embodiment, when the driving module 10 is driven by the central rotating shaft module 14 and the ring gear member 12 is fixed and not rotated, when the central rotating shaft module 14 drives the central rotating plate member 102 to rotate, The moving turntable module 11 is revolved by the center turntable member 102, so that the gear ring 112 of the driven turntable module 11 can be rotated by meshing with the fixed ring gear member 12. In another embodiment, the wafer carrier further includes a rotor module 15 disposed under the ring gear member 12 for driving the ring gear member 12, wherein the rotor module 15 and the driving module 10 are driven. The speed can be different, so that the speed of the revolution and the rotation of the driven carousel module 11 is different. In short, the revolution speed and the rotation speed can be controlled separately according to the demand. The wafer carrier device 1 can simultaneously revolve and rotate the wafer W during the semiconductor manufacturing process to effectively offset the consumption phenomenon, and the uniformity of the temperature and the uniformity of the thickness of the coating layer can be effectively improved.
於又一實施例中,請參考圖4A及4B,晶圓承載裝置1更包括複數個齒輪環蓋板16用以覆蓋於複數個齒輪環112上方,其中每一齒輪環蓋板16係靠設於主動傳動模組10的上表面並與位於下方的齒輪環112之間具有間隙G2 ,其中齒輪環蓋板16的設置可保護齒輪環112減緩製程氣體腐蝕的速率,以提高齒輪環112的壽命,於一實施例中,覆蓋後的齒輪環蓋板16的上表面161係與轉盤元件111的頂面1112齊平。此外,晶圓承載裝置1更包括一主動傳動模組蓋板17用以覆蓋主動傳動模組10,其中主動傳動模組蓋板17具有複數個鏤空部171用以曝露出中心轉盤元件102、複數轉盤元件111與複數齒輪環蓋板16;且覆蓋後主動傳動模組蓋板17之上表面172與板狀主體101的上表面、齒輪環蓋板16的上表面161齊平。同理,主動傳動模組蓋板17的設置可減緩製程氣體對於板狀主體101的腐蝕速率,以增加板狀主體101的使用壽命。更者,為防止製程氣體,例如熱氨氣,對於上述蓋板的腐蝕,於一實施例中,更包括一保護層鍍膜設置於主動傳動模組蓋板16、齒輪環蓋板17中的至少其中之一上。In another embodiment, referring to FIGS. 4A and 4B, the wafer carrier device 1 further includes a plurality of gear ring covers 16 for covering over the plurality of gear rings 112, wherein each of the gear ring covers 16 is disposed There is a gap G 2 between the upper surface of the active transmission module 10 and the underlying gear ring 112, wherein the gear ring cover 16 is disposed to protect the gear ring 112 from slowing the rate of process gas corrosion to improve the gear ring 112. Lifetime, in one embodiment, the upper surface 161 of the covered gear ring cover 16 is flush with the top surface 1112 of the turntable member 111. In addition, the wafer carrier device 1 further includes an active drive module cover 17 for covering the active drive module 10, wherein the active drive module cover 17 has a plurality of hollow portions 171 for exposing the center turntable member 102, plural The turntable element 111 and the plurality of gear ring covers 16; and the upper surface 172 of the rear drive drive cover plate 17 is flush with the upper surface of the plate-like body 101 and the upper surface 161 of the gear ring cover 16. Similarly, the arrangement of the active transmission module cover 17 can slow the corrosion rate of the process gas to the plate-like body 101 to increase the service life of the plate-like body 101. Moreover, in order to prevent the process gas, such as hot ammonia gas, the corrosion of the cover plate, in one embodiment, further including a protective layer coating film disposed on the active transmission module cover 16 and the gear ring cover plate 17 One of them.
上述晶圓承載裝置可使用於進行一半導體製程程序時,本發明不同實施例之反應腔室分別請參考圖5A及圖5B。一種反應腔室2用以對複數晶圓W進行一金屬有機化學氣相沈積(MOCVD)反應程序,此反應腔室2可包含上述任一實施例之晶圓承載裝置1,其中此反應腔室2包含:一腔體20,晶圓承載裝置1設置於腔體2內。一氣體供應裝置21a (如圖5A)或21b (如圖5B)設置於晶圓承載裝置1上方,用以提供晶圓承載裝置1反應氣體,其中氣體供應裝置為一水平噴射式(如圖5A)與一垂直噴淋式(如圖5B)的其中一種。一加熱裝置22設置於主動傳動模組10下方用以加熱晶圓W。利用本發明之晶圓承載裝置1可於半導體製程時,使晶圓W同時公轉與自轉,以有效抵銷消耗現象,進而製程時溫度的均勻性及鍍膜層厚度的均勻性皆可以有效提升。The above-mentioned wafer carrying device can be used to carry out a semiconductor process, and the reaction chambers of different embodiments of the present invention are respectively referred to FIG. 5A and FIG. 5B. A reaction chamber 2 is configured to perform a metal organic chemical vapor deposition (MOCVD) reaction process on a plurality of wafers W, and the reaction chamber 2 may include the wafer carrier device 1 of any of the above embodiments, wherein the reaction chamber 2 includes: a cavity 20, and the wafer carrier device 1 is disposed in the cavity 2. A gas supply device 21a (as shown in FIG. 5A) or 21b (FIG. 5B) is disposed above the wafer carrier device 1 for providing a reaction gas of the wafer carrier device 1, wherein the gas supply device is a horizontal spray type (FIG. 5A). ) with one of the vertical spray type (Figure 5B). A heating device 22 is disposed under the active transmission module 10 for heating the wafer W. By using the wafer carrier device 1 of the present invention, the wafer W can be simultaneously revolved and rotated during the semiconductor manufacturing process to effectively offset the consumption phenomenon, and the uniformity of the temperature and the uniformity of the thickness of the coating layer can be effectively improved.
綜合上述,本發明藉由主動傳動模組的驅動,使得設置於轉盤元件上的晶圓可同時對著主動傳動模組的中心軸公轉並且分別朝轉盤元件的中心軸自轉,使晶圓鍍膜厚度更佳均勻以提高半導體製程的良率。再者,用以承載晶圓的轉盤元件與主動傳動模組的板狀主體之間具有一間隙,可置入滾珠以減少晶圓自轉時的磨擦現象。更者,利用凹槽結構限制滾珠的移動範圍,並使凹槽之開口大於滾珠的直徑,使滾珠可平均地在上述凹槽結構中滾動,可減少滾珠的平均磨耗。此外,為減緩製程氣體腐蝕主動傳動模組的速率,於製程氣體可能侵害之處輔以蓋板覆蓋以提高各組件的壽命。本發明之晶圓承載裝置可廣泛使用於水平噴射式或垂直噴淋式的MOCVD的製程腔室中,以有效提高製程良率。In summary, the driving of the active drive module enables the wafer disposed on the turntable component to revolve simultaneously against the central axis of the active drive module and rotate toward the central axis of the turntable component to make the thickness of the wafer coating. Better uniformity to improve the yield of semiconductor processes. Furthermore, there is a gap between the turntable component for carrying the wafer and the plate-shaped body of the active drive module, and the ball can be placed to reduce the friction phenomenon when the wafer rotates. Moreover, the groove structure is used to limit the range of movement of the balls, and the opening of the groove is larger than the diameter of the balls, so that the balls can roll evenly in the groove structure, and the average wear of the balls can be reduced. In addition, in order to slow the process gas corrosion rate of the active drive module, the cover gas may be covered by the cover gas to improve the life of each component. The wafer carrying device of the present invention can be widely used in a horizontal jet or vertical spray MOCVD process chamber to effectively improve the process yield.
藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。因此,本發明所申請之專利範圍的範疇應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。The features and spirit of the present invention will be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed. Therefore, the scope of the patented scope of the invention should be construed as broadly construed in the
1‧‧‧晶圓承載裝置
10‧‧‧主動傳動模組
101‧‧‧板狀主體
1011‧‧‧中心通孔
1012‧‧‧凹槽
1012’‧‧‧通孔
1012a‧‧‧第一開口
1012b‧‧‧第二開口
1012c‧‧‧斷差部
1013‧‧‧下表面
102‧‧‧中心轉盤元件
1021‧‧‧嵌合機構
1022‧‧‧斜面
11‧‧‧從動轉盤模組
111‧‧‧轉盤元件
1111‧‧‧側壁
1111a‧‧‧突出部
1111b‧‧‧孔
1112‧‧‧頂面
1113‧‧‧底面
1114‧‧‧柱體
112‧‧‧齒輪環
1121‧‧‧斷差
12‧‧‧環狀齒輪元件
13‧‧‧滾珠
131,132‧‧‧環形凹槽
14‧‧‧中心轉軸模組
15‧‧‧轉子模組
16‧‧‧齒輪環蓋板
161‧‧‧上表面
17‧‧‧主動傳動模組蓋板
171‧‧‧鏤空部
172‧‧‧上表面
2‧‧‧反應腔室
20‧‧‧腔體
21a,21b‧‧‧氣體供應裝置
22‧‧‧加熱裝置
d‧‧‧寬度
D‧‧‧直徑
G,G1,G2‧‧‧間隙
W‧‧‧晶圓
X1,X2‧‧‧中心軸1‧‧‧ wafer carrier
10‧‧‧Active drive module
101‧‧‧ plate body
1011‧‧‧ center through hole
1012‧‧‧ Groove
1012'‧‧‧through hole
1012a‧‧‧first opening
1012b‧‧‧ second opening
1012c‧‧‧Departure
1013‧‧‧ lower surface
102‧‧‧ center turntable components
1021‧‧‧Chimeric institutions
1022‧‧‧Slope
11‧‧‧ Driven turntable module
111‧‧‧ Turntable components
1111‧‧‧ side wall
1111a‧‧‧Protruding
1111b‧‧‧ hole
1112‧‧‧ top surface
1113‧‧‧ bottom
1114‧‧‧Cylinder
112‧‧‧Gear ring
1121‧‧‧difference
12‧‧‧Ring gear elements
13‧‧‧ balls
131,132‧‧‧ annular groove
14‧‧‧Center shaft module
15‧‧‧Rotor module
16‧‧‧Gear ring cover
161‧‧‧ upper surface
17‧‧‧Active drive module cover
171‧‧‧镂空部
172‧‧‧ upper surface
2‧‧‧Reaction chamber
20‧‧‧ cavity
21a, 21b‧‧‧ gas supply
22‧‧‧ heating device
‧‧‧Width
D‧‧‧diameter
G, G 1 , G 2 ‧ ‧ gap
W‧‧‧ wafer
X 1 , X 2 ‧‧‧ central axis
圖1A為本發明一實施例之晶圓承載裝置的結構示意圖。 圖1B、1C、1D為依據圖1A不同實施例的局部放大示意圖。 圖1E、1F為依據圖1A不同實施例的滾珠配置局部放大示意圖。 圖1G、1H為本發明又一實施例的滾珠配置局部放大示意圖。 圖2A為圖1A的結構局部爆炸圖。 圖2B為本發明一實施例之晶圓承載裝置的結構局部示意圖。 圖3A為本發明一實施例之主動傳動模組的爆炸剖視圖。 圖3B、圖3E、圖3F為圖3A組立後不同實施例的局部放大圖。 圖3C為本發明又一實施例之主動傳動模組的爆炸剖視圖。 圖3D為圖3C組立後的局部放大圖。 圖4A為本發明又一實施例之晶圓承載裝置的結構局部爆炸圖。 圖4B為本發明又一實施例之晶圓承載裝置的結構局部放大圖。 圖5A與圖5B為本發明不同實施例之反應腔室的示意圖。FIG. 1A is a schematic structural view of a wafer carrier device according to an embodiment of the invention. 1B, 1C, and 1D are partially enlarged schematic views of different embodiments according to Fig. 1A. 1E and 1F are partially enlarged schematic views of a ball arrangement according to different embodiments of Fig. 1A. 1G and 1H are partially enlarged schematic views showing a ball arrangement according to still another embodiment of the present invention. 2A is a partial exploded view of the structure of FIG. 1A. 2B is a partial schematic view showing the structure of a wafer carrier device according to an embodiment of the invention. 3A is an exploded cross-sectional view of an active transmission module in accordance with an embodiment of the present invention. 3B, 3E, and 3F are partially enlarged views of different embodiments after the assembly of Fig. 3A. 3C is an exploded cross-sectional view of an active transmission module according to still another embodiment of the present invention. Figure 3D is a partial enlarged view of the assembled portion of Figure 3C. 4A is a partial exploded view showing the structure of a wafer carrying device according to still another embodiment of the present invention. 4B is a partial enlarged view showing the structure of a wafer carrying device according to still another embodiment of the present invention. 5A and 5B are schematic views of a reaction chamber of various embodiments of the present invention.
1‧‧‧晶圓承載裝置 1‧‧‧ wafer carrier
10‧‧‧主動傳動模組 10‧‧‧Active drive module
101‧‧‧板狀主體 101‧‧‧ plate body
11‧‧‧從動轉盤模組 11‧‧‧ Driven turntable module
111‧‧‧轉盤元件 111‧‧‧ Turntable components
1111‧‧‧側壁 1111‧‧‧ side wall
112‧‧‧齒輪環 112‧‧‧Gear ring
12‧‧‧環狀齒輪元件 12‧‧‧Ring gear components
13‧‧‧滾珠 13‧‧‧ balls
W‧‧‧晶圓 W‧‧‧ wafer
X1,X2‧‧‧中心軸 X 1 , X 2 ‧‧‧ central axis
Claims (29)
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| TW104102808A TWI559440B (en) | 2015-01-28 | 2015-01-28 | Wafer carrier |
| CN201610053848.XA CN105826230A (en) | 2015-01-28 | 2016-01-27 | Wafer Carrier |
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| TW104102808A TWI559440B (en) | 2015-01-28 | 2015-01-28 | Wafer carrier |
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| TWI559440B TWI559440B (en) | 2016-11-21 |
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| TW (1) | TWI559440B (en) |
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| TWI718501B (en) * | 2019-03-20 | 2021-02-11 | 漢民科技股份有限公司 | Wafer susceptor device for vapor deposition equipment |
| TWI739623B (en) * | 2019-10-15 | 2021-09-11 | 日商聖德科股份有限公司 | Substrate rotation device |
| TWI839960B (en) * | 2021-12-15 | 2024-04-21 | 日商日本碍子股份有限公司 | Wafer placement table |
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| TWI656233B (en) * | 2017-10-26 | 2019-04-11 | 漢民科技股份有限公司 | Single-wafer processing apparatus, a method of operating and transferring the same and a collimator |
| CN108330468B (en) * | 2018-03-14 | 2023-06-30 | 深圳市志橙半导体材料有限公司 | Matrix supporting device and matrix rotation driving device of chemical vapor deposition furnace |
| CN114250433B (en) * | 2020-09-22 | 2025-02-14 | 东莞令特电子有限公司 | Masking Tray Assemblies for Arc Spray Applications |
| CN113533770B (en) * | 2021-07-09 | 2025-02-11 | 南昌昂坤半导体设备有限公司 | A method and device for measuring the rotation speed of a satellite disk of a MOCVD planetary tray |
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| US5584936A (en) * | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
| US8324063B2 (en) * | 2007-11-08 | 2012-12-04 | Sumco Corporation | Epitaxial film growing method, wafer supporting structure and susceptor |
| TW200931584A (en) * | 2008-01-15 | 2009-07-16 | Advance Crystal Technology Inc | A susceptor for wafer epitaxy growth. |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI718501B (en) * | 2019-03-20 | 2021-02-11 | 漢民科技股份有限公司 | Wafer susceptor device for vapor deposition equipment |
| TWI739623B (en) * | 2019-10-15 | 2021-09-11 | 日商聖德科股份有限公司 | Substrate rotation device |
| TWI839960B (en) * | 2021-12-15 | 2024-04-21 | 日商日本碍子股份有限公司 | Wafer placement table |
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| CN105826230A (en) | 2016-08-03 |
| TWI559440B (en) | 2016-11-21 |
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