[go: up one dir, main page]

TW201612973A - Method for etching - Google Patents

Method for etching

Info

Publication number
TW201612973A
TW201612973A TW104116481A TW104116481A TW201612973A TW 201612973 A TW201612973 A TW 201612973A TW 104116481 A TW104116481 A TW 104116481A TW 104116481 A TW104116481 A TW 104116481A TW 201612973 A TW201612973 A TW 201612973A
Authority
TW
Taiwan
Prior art keywords
silicon
gas
nitride film
silicon nitride
chamber
Prior art date
Application number
TW104116481A
Other languages
Chinese (zh)
Inventor
Nobuhiro Takahashi
Tetsuro Takahashi
Akitaka Shimizu
Koichi Nagakura
Takeshi Saito
Shuichiro Uda
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201612973A publication Critical patent/TW201612973A/en

Links

Classifications

    • H10P50/242—

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

In the present invention, a surface has a silicon nitride film; a substrate to be processed (W) having a silicon and/or a silicon oxide film adjacent to the silicon nitride film is disposed inside a chamber (40); and a fluorine-containing gas, an alcohol gas, an O2 gas, and an inert gas are supplied into the chamber (40) in an excited state, thereby selectively etching the silicon nitride film onto the silicon and/or silicon oxide film.
TW104116481A 2014-06-02 2015-05-22 Method for etching TW201612973A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014113908A JP2015228433A (en) 2014-06-02 2014-06-02 Etching method

Publications (1)

Publication Number Publication Date
TW201612973A true TW201612973A (en) 2016-04-01

Family

ID=54766539

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104116481A TW201612973A (en) 2014-06-02 2015-05-22 Method for etching

Country Status (3)

Country Link
JP (1) JP2015228433A (en)
TW (1) TW201612973A (en)
WO (1) WO2015186461A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI648785B (en) * 2016-05-29 2019-01-21 Tokyo Electron Limited Selective tantalum nitride etching method
TWI767085B (en) * 2017-11-07 2022-06-11 日商東京威力科創股份有限公司 Method of conformal etching selective to other materials

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6619703B2 (en) * 2016-06-28 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス Etching method
KR102700329B1 (en) * 2021-07-19 2024-08-30 주식회사 히타치하이테크 Semiconductor manufacturing apparatus and method for cleaning semiconductor manufacturing apparatus
JP7625716B2 (en) 2022-12-19 2025-02-03 株式会社日立ハイテク Etching Method
CN120693680A (en) * 2024-01-22 2025-09-23 株式会社日立高新技术 Etching method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3292172B2 (en) * 1999-03-31 2002-06-17 日本電気株式会社 Method for manufacturing semiconductor device
JP5494475B2 (en) * 2008-03-31 2014-05-14 日本ゼオン株式会社 Plasma etching method
JP5476152B2 (en) * 2010-02-16 2014-04-23 積水化学工業株式会社 Silicon nitride etching method and apparatus
US8999856B2 (en) * 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI648785B (en) * 2016-05-29 2019-01-21 Tokyo Electron Limited Selective tantalum nitride etching method
TWI767085B (en) * 2017-11-07 2022-06-11 日商東京威力科創股份有限公司 Method of conformal etching selective to other materials

Also Published As

Publication number Publication date
WO2015186461A1 (en) 2015-12-10
JP2015228433A (en) 2015-12-17

Similar Documents

Publication Publication Date Title
TW201614106A (en) Plasma-free metal etch
TW201612973A (en) Method for etching
TW201612976A (en) Etching method and storage medium
TW201614811A (en) Nanocrystalline diamond carbon film for 3D NAND hardmask application
WO2018222403A3 (en) Water-free etching methods
WO2016014439A3 (en) Forming enhancement mode iii-nitride devices
JP2013118359A5 (en)
JP2015035607A5 (en)
EP2922083A3 (en) Plasma pre-clean process
SG10201504792WA (en) Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
TWD175852S (en) Upper chamber for plasma treatment device
EP4293706A3 (en) Direct and sequential formation of monolayers of boron nitride and graphene on substrates
MY184311A (en) Etching processes for solar cell fabrication
EP3666937C0 (en) High-flatness, low-damage and large-diameter monocrystalline silicon carbide substrate, and manufacturing method therefor
MY185237A (en) Semiconductor wafer with a layer of al:ga1-zn and process for producing it
TW201614719A (en) Semiconductor manufacturing method and semiconductor manufacturing apparatus
TWD179672S (en) Part of the substrate retaining ring
EP3159915A4 (en) Method for polishing silicon wafer, polishing composition, and polishing composition set
EP3258483A4 (en) Method for polishing silicon wafer and surface treatment composition
TW201614737A (en) Method for evaluating quality of oxide semiconductor thin film and laminated body having protective film on surface of oxide semiconductor thin film, and method for managing quality of oxide semiconductor thin film
TW201614105A (en) Etching gas composition for silicon compound, and etching method
SG10201909284PA (en) Residue free oxide etch
GB2541146A (en) Method of manufacturing a germanium-on-insulator substrate
SG11202004796PA (en) Silicon oxide silicon nitride stack stair step etch
WO2015126575A3 (en) Silicon carbide semiconductor device, and methods for manufacturing thereof