TW201616562A - Using nano-spheres or micro-spheres and laser to fabricate substrate with nanostructures - Google Patents
Using nano-spheres or micro-spheres and laser to fabricate substrate with nanostructures Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 128
- 239000004005 microsphere Substances 0.000 title claims abstract description 102
- 239000002077 nanosphere Substances 0.000 title claims abstract description 32
- 239000002086 nanomaterial Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 17
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- 238000007788 roughening Methods 0.000 claims description 8
- 238000005286 illumination Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000011806 microball Substances 0.000 abstract 3
- 238000010329 laser etching Methods 0.000 abstract 1
- 238000001459 lithography Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
Description
本發明係關於一種製造具有微結構之粗糙化基板的方法,特別是關於一種以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法。 BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a method of fabricating a roughened substrate having microstructures, and more particularly to a method of fabricating a roughened substrate having microstructures using nanosphere spheres and lasers.
隨著社會的現代化與環保意識的抬頭,人們對於節能產品的需求日益攀升。而LED、OLED與太陽能電池產業的快速進展與成本的大幅降低,更使LED、OLED與太陽能電池漸漸成為節能需求下之主要照明元件。 With the rise of social modernization and environmental awareness, people's demand for energy-saving products is rising. The rapid progress of LED, OLED and solar cell industry and the significant reduction in cost have made LED, OLED and solar cells gradually become the main lighting components under energy-saving requirements.
由於LED、OLED與太陽能電池產品之半導體及光學特性,LED、OLED與太陽能電池所使用之基板,其表面粗糙度越高則可以產生出之光學效率就越好。因此,不管是學術界或是OLED、LED與太陽能電池產業界,都投入了極大的研究發展能量在基板粗糙化的研究與創新之上。 Due to the semiconductor and optical properties of LED, OLED and solar cell products, the higher the surface roughness of the substrates used for LEDs, OLEDs and solar cells, the better the optical efficiency that can be produced. Therefore, whether it is academia or the OLED, LED and solar cell industries, great research and development energy has been invested in the research and innovation of substrate roughening.
然而,時至今日,省時省錢又具有高效率的基板粗糙化製造方法,仍然付之闕如。大多數的量產仍然是以黃光微影 製程在進行。 However, today, the method of manufacturing a substrate roughening method that saves time and money and has high efficiency is still unsuccessful. Most mass production is still yellow lithography The process is in progress.
黃光微影製程是可以製造出粗糙化基板,但是黃光微影製程的設備卻頗為昂貴,而且必須使用大量的光阻材料,不但成本甚高,而且也間接的對地球環境產生污染。 The yellow light lithography process can produce roughened substrates, but the yellow lithography process is quite expensive, and a large amount of photoresist must be used, which is not only costly, but also indirectly pollutes the global environment.
有鑑於此,一種實用的以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法,藉由簡單的光學設備與設計,在小體積、不須昂貴設備、低成本需求的狀況下,即能產生出高品質的粗糙化基板,並且由於製程簡單,所需使用的時間亦較習知黃光微影製程為短,而可以提升製造粗糙化基板之效率,便日漸為LED、OLED與太陽能電池產業所共同期盼。 In view of this, a practical method for manufacturing a roughened substrate having a microstructure by using a nanosphere ball and a laser, with a simple optical device and design, requires a small volume, requires no expensive equipment, and requires low cost. The high-quality roughened substrate can be produced, and the process time is shorter than that of the conventional yellow light lithography process, and the efficiency of manufacturing the roughened substrate can be improved, and LEDs and OLEDs are increasingly used. The solar cell industry is looking forward to it.
本發明為以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法,其包括下列步驟:提供一基板;鋪設微型球體;進行雷射照射蝕刻;以及移除微型球體並形成粗糙化基板。藉由本發明之實施,可降低形成粗糙化基板之製造成本,並提高粗糙化基板之製造效率,可大量應用於生物技術領域、OLED、LED、3D IC與太陽能電池等需要粗糙化或是圖案化基板之產業。 The present invention is a method for fabricating a microstructured roughened substrate using nanosphere spheres and lasers, comprising the steps of: providing a substrate; laying microspheres; performing laser illumination etching; and removing microspheres and forming roughness The substrate. Through the implementation of the invention, the manufacturing cost of forming the roughened substrate can be reduced, and the manufacturing efficiency of the roughened substrate can be improved, and the utility model can be widely applied in the field of biotechnology, and the OLED, the LED, the 3D IC and the solar cell need to be roughened or patterned. The industry of substrates.
本發明係提供一種以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法,其包括下列步驟:提供一基板;鋪設微型球體,其係於基板之一表面鋪設一微型球體層,微型球體層係由至少一個微型球體所組成;進行雷射照射蝕刻,其係以一雷射照射微型球體層,且微型球體將雷射聚焦至表面並對表面進行蝕刻且形成至少一凹槽;以及移除微型球體並形成粗糙化基 板,其係自表面移除微型球體,並形成具有至少一個微結構之一粗糙化基板。 The invention provides a method for manufacturing a roughened substrate having microstructures by using nanosphere spheres and lasers, comprising the steps of: providing a substrate; laying a microsphere, which is laid on a surface of one of the substrates; The microsphere layer is composed of at least one microsphere; performing laser irradiation etching, irradiating the microsphere layer with a laser, and the microsphere focuses the laser to the surface and etching the surface to form at least one groove And removing the microspheres and forming a roughening base A plate that removes microspheres from the surface and forms a roughened substrate having at least one microstructure.
本發明又提供一種以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法,其包括下列步驟:提供一基板;設定粗化目標區域,其係於基板之一表面擇定一粗化目標區域,並以一遮罩遮蔽粗化目標區域以外之區域;鋪設微型球體,其係於具有粗化目標區域及遮罩之表面鋪設一微型球體層,其中微型球體層係由至少一個微型球體所組成;進行雷射照射蝕刻,其係以一雷射照射微型球體層,且微型球體將雷射聚焦至粗化目標區域並對粗化目標區域進行蝕刻且形成至少一凹槽;以及移除微型球體及遮罩並形成粗糙化基板,其係移除微型球體及遮罩,並形成具有至少一個微結構之一粗糙化基板。 The invention further provides a method for manufacturing a roughened substrate having a microstructure by using a nanosphere ball and a laser, comprising the steps of: providing a substrate; setting a roughening target region, which is selected on a surface of the substrate; Shrinking the target area and masking the area outside the roughened target area with a mask; laying a microsphere which is laid on the surface having the roughened target area and the mask to lay a microsphere layer, wherein the microsphere layer is composed of at least one Forming a microsphere; performing a laser illumination etching by irradiating the microsphere layer with a laser, and the microsphere focuses the laser to the roughened target area and etching the roughened target area to form at least one groove; The microspheres and mask are removed and a roughened substrate is formed which removes the microspheres and the mask and forms a roughened substrate having at least one microstructure.
藉由本發明之實施,至少可以達到下列進步功效: With the implementation of the present invention, at least the following advancements can be achieved:
一、節省製造糙化基板之製程設備及成本。 First, save the process equipment and cost of manufacturing roughened substrates.
二、提高粗糙化基板之製造效率。 Second, improve the manufacturing efficiency of the roughened substrate.
為使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點,因此將在實施方式中詳細敘述本發明之詳細特徵以及優點。 In order to make the technical content of the present invention known to those skilled in the art and to implement the present invention, and in accordance with the disclosure, the scope of the application, and the drawings, the related objects and advantages of the present invention can be easily understood by those skilled in the art. The detailed features and advantages of the present invention will be described in detail in the embodiments.
S100‧‧‧以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法 S100‧‧‧Method for manufacturing a microstructured roughened substrate using nanosphere spheres and lasers
S200‧‧‧以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法 S200‧‧‧Method for manufacturing a microstructured roughened substrate using nanosphere spheres and lasers
S10‧‧‧提供一基板 S10‧‧‧ provides a substrate
S15‧‧‧設定粗化目標區域 S15‧‧‧Set rough target area
S20‧‧‧鋪設微型球體 S20‧‧‧ laying miniature spheres
S30‧‧‧進行雷射照射蝕刻 S30‧‧‧Laser illumination etching
S40‧‧‧移除微型球體並形成粗糙化基板 S40‧‧‧Remove the microspheres and form a roughened substrate
S50‧‧‧移除微型球體及遮罩並形成粗糙化基板 S50‧‧‧Remove the microspheres and masks and form a roughened substrate
100‧‧‧基板 100‧‧‧Substrate
100’‧‧‧粗糙化基板 100'‧‧‧Roughened substrate
100”‧‧‧粗糙化基板 100"‧‧‧Roughened substrate
200‧‧‧微型球體層 200‧‧‧Microsphere layer
10‧‧‧微型球體 10‧‧‧Microspheres
20‧‧‧雷射 20‧‧‧Laser
30‧‧‧凹槽 30‧‧‧ Groove
40‧‧‧粗化目標區域 40‧‧‧ rough target area
50‧‧‧遮罩 50‧‧‧ mask
第1圖係為本發明實施例之一種以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法之步驟圖。 1 is a step diagram of a method of manufacturing a roughened substrate having a microstructure by using a nanosphere ball and a laser according to an embodiment of the present invention.
第2圖係為本發明實施例之一種基板之剖視示意圖。 2 is a schematic cross-sectional view of a substrate according to an embodiment of the present invention.
第3圖係為本發明實施例之一種鋪設一層微型球體之基板的剖視示意圖。 FIG. 3 is a cross-sectional view showing a substrate on which a microsphere is laid according to an embodiment of the present invention.
第4A圖係為本發明實施例之一種以雷射照射鋪設一層微型球體之基板的之剖視示意圖。 4A is a cross-sectional view showing a substrate in which a microsphere is laid by laser irradiation according to an embodiment of the present invention.
第4B圖係為本發明實施例之另一種以雷射照射鋪設一層微型球體之基板進行蝕刻之剖視示意圖。 FIG. 4B is a schematic cross-sectional view showing another embodiment of the present invention for etching a substrate on which a microsphere is laid by laser irradiation.
第5圖係為本發明實施例之一種雷射照射蝕刻後之鋪設一層微型球體之基板的剖視示意圖。 FIG. 5 is a cross-sectional view showing a substrate on which a microsphere is laid after laser irradiation etching according to an embodiment of the present invention.
第6圖係為本發明實施例之一種具有微結構之粗糙化基板的剖視示意圖。 Figure 6 is a cross-sectional view showing a roughened substrate having a microstructure according to an embodiment of the present invention.
第7圖係為本發明實施例之另一種以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法之步驟圖。 Fig. 7 is a view showing the steps of a method for manufacturing a roughened substrate having a microstructure by using a nanosphere ball and a laser according to an embodiment of the present invention.
第8圖係為本發明實施例之一種基板、粗化目標區域及遮罩之剖視示意圖。 Figure 8 is a cross-sectional view showing a substrate, a roughened target area, and a mask according to an embodiment of the present invention.
第9圖係為本發明實施例之一種基板、粗化目標區域及遮罩並鋪設有一微型球體層之剖視示意圖。 Figure 9 is a cross-sectional view showing a substrate, a roughened target region, and a mask and a microsphere layer laid in the embodiment of the present invention.
第10圖係為本發明實施例之一種以雷射照射如第9圖的實施例之剖視示意圖。 Figure 10 is a cross-sectional view showing an embodiment of the present invention irradiated with laser light as in the embodiment of Figure 9.
第11圖係為本發明實施例之一種粗化目標區域形成凹槽之剖視示意圖。 Figure 11 is a cross-sectional view showing a groove formed by roughening a target region according to an embodiment of the present invention.
第12圖係為本發明實施例之另一種具有微結構之粗糙化基板的剖視示意圖。 Figure 12 is a cross-sectional view showing another roughened substrate having a microstructure according to an embodiment of the present invention.
請參考如第1圖所示,為實施例之一種以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法S100,其包括下列步驟:提供一基板(步驟S10);鋪設微型球體(步驟S20);進行雷射照射蝕刻(步驟S30);以及移除微型球體並形成粗糙化基板(步驟S40)。 Referring to FIG. 1 , a method S100 for manufacturing a microstructured roughened substrate by using a nanosphere ball and a laser as an embodiment includes the following steps: providing a substrate (step S10); laying a micro The sphere (step S20); performing laser irradiation etching (step S30); and removing the microspheres and forming a roughened substrate (step S40).
如第1圖及第2圖所示,提供一基板(步驟S10),係先固設一個需要進行表面粗糙化之基板100。基板100可以是單晶矽材質、多晶矽材質、非晶矽材質、微晶矽材質、碳化矽、氧化鎵、藍寶石材質、陶瓷材質、透明導電材質、金屬薄膜、軟性基板、砷化鎵與其他三五族或二六族材質所形成,而可做為生物技術領域應用或製造LED、OLED、3D IC與太陽能電池之基板100。 As shown in FIGS. 1 and 2, a substrate is provided (step S10), and a substrate 100 to be surface roughened is first fixed. The substrate 100 may be a single crystal germanium material, a polycrystalline germanium material, an amorphous germanium material, a microcrystalline germanium material, a tantalum carbide, a gallium oxide, a sapphire material, a ceramic material, a transparent conductive material, a metal thin film, a flexible substrate, gallium arsenide, and the like. It is formed by five or two groups of materials, and can be used as a substrate 100 for application or manufacture of LEDs, OLEDs, 3D ICs and solar cells in the field of biotechnology.
如第1圖及第3圖所示,鋪設微型球體(步驟S20),其係於基板100之一表面鋪設一微型球體層200,微型球體層200係由至少一個微型球體10所組成,且任二微型球體10係可以不相重疊。也就是說,微型球體層200可以是由多個單顆微型球體10相鄰但不相重疊所排列鋪設而成。 As shown in FIGS. 1 and 3, a microsphere is laid (step S20), and a microsphere layer 200 is laid on one surface of the substrate 100, and the microsphere layer 200 is composed of at least one microsphere 10, and The two microspheres 10 may not overlap. That is to say, the microsphere layer 200 may be formed by arranging a plurality of single microspheres 10 adjacent to each other without overlapping.
如第3圖所示之微型球體層200,可以是奈米等級的微型球體10,亦即所謂的奈米球,所組成;或者是微米等級的微型球體10,亦即所謂的微米球,所組成;又或者是一部份奈米等級的微型球體10與另一部份微米等級的微型球體10,亦即奈米球及微米球所組成。 The microsphere layer 200 as shown in FIG. 3 may be composed of a nano-scale microsphere 10, a so-called nanosphere, or a micro-scale microsphere 10, also known as a microsphere. Composition; or a part of the nano-scale microsphere 10 and another micro-scale microsphere 10, namely nanosphere and microsphere.
如第1圖、第4A圖及第4B圖所示,進行雷射照射蝕刻(步驟S30),其係以一雷射20照射微型球體層200,且微型球 體層200之每一個微型球體10,分別將雷射20之雷射光聚焦至基板100的表面,並對基板100的表面進行蝕刻且形成至少一凹槽30。 As shown in FIG. 1 , FIG. 4A and FIG. 4B , laser irradiation etching is performed (step S30 ), which irradiates the microsphere layer 200 with a laser 20 and the microspheres. Each of the microspheres 10 of the bulk layer 200 respectively focuses the laser light of the laser 20 onto the surface of the substrate 100, and etches the surface of the substrate 100 to form at least one recess 30.
如第4A圖及第4B圖所示之實施例,係在雷射20所射出之光束無法一次涵蓋整個基板100的表面時,可以控制使雷射20移動,使雷射20可以照射整個基板100的表面上所有的微型球體10,藉由微型球體10之聚焦對基板100的表面進行蝕刻,並在基板100的表面上形成至少一個凹槽30。 As shown in FIGS. 4A and 4B, when the beam emitted by the laser 20 cannot cover the entire surface of the substrate 100 at one time, the laser 20 can be controlled to move so that the laser 20 can illuminate the entire substrate 100. All of the microspheres 10 on the surface are etched by the focus of the microspheres 10, and at least one recess 30 is formed on the surface of the substrate 100.
如第5圖所示,則為鋪設有微型球體層200的基板100,受雷射20照射蝕刻後,於基板100的表面上形成至少一個凹槽30的示意結構剖視圖。 As shown in FIG. 5, a schematic cross-sectional view of at least one recess 30 formed on the surface of the substrate 100 after the substrate 100 having the microsphere layer 200 is etched by the laser 20 is etched.
如第1圖及第6圖所示,移除微型球體並形成粗糙化基板(步驟S40),其係於基板100的表面上形成至少一個凹槽30之後,自基板100的表面移除該些微型球體10,亦即移除微型球體層200,並形成具有複數個微結構之粗糙化基板100’,其中,所述之微結構係由凹槽30所形成。 As shown in FIGS. 1 and 6, the microspheres are removed and a roughened substrate is formed (step S40), which is removed from the surface of the substrate 100 after the at least one recess 30 is formed on the surface of the substrate 100. The microsphere 10, that is, the microsphere layer 200 is removed, and a roughened substrate 100' having a plurality of microstructures formed by the recesses 30 is formed.
接著,請參考如第7圖所示,為實施例之另一種以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法S200,其包括下列步驟:提供一基板(步驟S10);設定粗化目標區域(步驟S15);鋪設微型球體(步驟S20);進行雷射照射蝕刻(步驟S30);以及移除微型球體及遮罩並形成粗糙化基板(步驟S50)。 Next, referring to another method S200 for manufacturing a microstructured roughened substrate by using a nanosphere ball and a laser as shown in FIG. 7, the method includes the following steps: providing a substrate (step S10) Setting the roughening target area (step S15); laying the microspheres (step S20); performing laser irradiation etching (step S30); and removing the microspheres and the mask and forming the roughened substrate (step S50).
如第7圖及第2圖所示,提供一基板(步驟S10),係先固設一個需要進行表面粗糙化之基板100。基板100可以是單晶矽材質、多晶矽材質、非晶矽材質、微晶矽材質、碳化矽、氧化 鎵、藍寶石材質、陶瓷材質、透明導電材質、金屬薄膜、塑膠、金屬氧化物、軟性基板、砷化鎵與其他三五族或二六族材質所形成,而可做為生物技術領域應用或製造LED、OLED、3D IC與太陽能電池之基板100。 As shown in FIGS. 7 and 2, a substrate is provided (step S10), and a substrate 100 to be surface roughened is first fixed. The substrate 100 may be a single crystal germanium material, a polycrystalline germanium material, an amorphous germanium material, a microcrystalline germanium material, tantalum carbide, and oxidation. Gallium, sapphire, ceramic, transparent conductive materials, metal film, plastic, metal oxide, flexible substrate, gallium arsenide and other three or five or six or six materials, can be used in the field of biotechnology applications or manufacturing A substrate 100 of LED, OLED, 3D IC and solar cell.
如第7圖及第8圖所示,設定粗化目標區域(步驟S15),其係於基板100之一表面上擇定一粗化目標區域40,並以一遮罩50遮蔽表面上的粗化目標區域40以外之區域。遮罩50係可以使雷射之光線不會蝕刻到基板100。 As shown in FIGS. 7 and 8, a roughening target area is set (step S15), which is selected on a surface of the substrate 100 to define a roughened target area 40, and a mask 50 is used to shield the surface from the rough. An area other than the target area 40. The mask 50 is such that the light of the laser is not etched into the substrate 100.
如第7圖及第9圖所示,鋪設微型球體(步驟S20),其係於具有粗化目標區域40及遮罩50之表面鋪設一微型球體層200,其中微型球體層200係由至少一個微型球體10所組成,且任二微型球體10係可以不相重疊。也就是說,微型球體層200可以是由多個單顆微型球體10相鄰但不相重疊所排列鋪設而成。 As shown in FIGS. 7 and 9, a microsphere is laid (step S20), and a microsphere layer 200 is laid on the surface having the roughened target region 40 and the mask 50, wherein the microsphere layer 200 is composed of at least one The microspheres 10 are composed, and any two microspheres 10 may not overlap. That is to say, the microsphere layer 200 may be formed by arranging a plurality of single microspheres 10 adjacent to each other without overlapping.
如第9圖所示之微型球體層200,可以是奈米等級的微型球體10,亦即所謂的奈米球,所組成;或者是微米等級的微型球體10,亦即所謂的微米球,所組成;又或者是一部份奈米等級的微型球體10與另一部份微米等級的微型球體10,亦即奈米球及微米球所組成。 The microsphere layer 200 as shown in FIG. 9 may be composed of a nano-scale microsphere 10, that is, a so-called nanosphere, or a micro-scale microsphere 10, also called a microsphere. Composition; or a part of the nano-scale microsphere 10 and another micro-scale microsphere 10, namely nanosphere and microsphere.
如第7圖、第10圖及第11圖所示,進行雷射照射蝕刻(步驟S30),其係以一雷射20照射微型球體層200,且粗化目標區域40上之微型球體10,可以將雷射20之雷射光聚焦至粗化目標區域40的基板100之表面,並對粗化目標區域40的基板100之表面進行蝕刻且形成至少一凹槽30。 As shown in FIGS. 7 , 10 , and 11 , laser irradiation etching is performed (step S30 ), which irradiates the microsphere layer 200 with a laser 20 and roughens the microsphere 10 on the target region 40, The laser light of the laser 20 can be focused to the surface of the substrate 100 of the roughened target region 40, and the surface of the substrate 100 of the roughened target region 40 is etched and at least one recess 30 is formed.
如第11圖所示,為鋪設有微型球體層200的基板 100,受雷射20照射蝕刻後,於粗化目標區域40的基板100之表面上形成至少一個凹槽30的示意結構剖視圖。 As shown in FIG. 11, the substrate is provided with the microsphere layer 200 100. A schematic structural cross-sectional view of at least one recess 30 formed on the surface of the substrate 100 of the roughened target region 40 after being irradiated by the laser 20 irradiation.
如第7圖及第12圖所示,移除微型球體及遮罩並形成粗糙化基板(步驟S50),係於粗化目標區域40的基板100之表面上形成至少一個凹槽30之後,自基板100的表面移除該些微型球體10及遮罩50,亦即移除微型球體層200及遮罩50,並形成具有複數個微結構之粗糙化基板100”,而其中所述之微結構則係由至少一個凹槽30所形成。 As shown in FIGS. 7 and 12, the microspheres and the mask are removed and a roughened substrate is formed (step S50), after at least one recess 30 is formed on the surface of the substrate 100 of the roughened target region 40, The surface of the substrate 100 removes the microspheres 10 and the mask 50, that is, removes the microsphere layer 200 and the mask 50, and forms a roughened substrate 100" having a plurality of microstructures, wherein the microstructure is It is formed by at least one groove 30.
由前述各實施例可知,以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法S100以及以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法S200,均不須使用習知黃光微影製程的昂貴設備,或習知製程需使用的光阻材料,而可以大幅節省製造粗糙化基板100’或粗糙化基板100”的成本。 It can be seen from the foregoing embodiments that the method S100 for manufacturing a roughened substrate having a microstructure by using a nanosphere ball and a laser, and the method S200 for manufacturing a roughened substrate having a microstructure by using a nanosphere ball and a laser are both The cost of manufacturing the roughened substrate 100' or the roughened substrate 100" can be greatly reduced without using expensive equipment of the conventional yellow light lithography process, or a photoresist material that is conventionally used in the process.
另一方面,以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法S100製造粗糙化基板100’,以及以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法S200製造粗糙化基板100”,所需使用的時間亦較習知黃光微影製程為短,而可以提升製造粗糙化基板100’或粗糙化基板100”之效率。 On the other hand, the method S100 for manufacturing a roughened substrate having a microstructure by using a nanosphere ball and a laser to produce a roughened substrate 100', and a nanostructured roughened substrate made of a nanosphere and a laser are used. The method S200 manufactures the roughened substrate 100", and the required use time is shorter than that of the conventional yellow light lithography process, and the efficiency of manufacturing the roughened substrate 100' or the roughened substrate 100" can be improved.
惟上述各實施例係用以說明本發明之特點,其目的在使熟習該技術者能瞭解本發明之內容並據以實施,而非限定本發明之專利範圍,故凡其他未脫離本發明所揭示之精神而完成之等效修飾或修改,仍應包含在以下所述之申請專利範圍中。 The embodiments are described to illustrate the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the present invention and to implement the present invention without limiting the scope of the present invention. Equivalent modifications or modifications made by the spirit of the disclosure should still be included in the scope of the claims described below.
S100‧‧‧以奈米球微米球及雷射製造具有微結構之粗糙化基板的方法 S100‧‧‧Method for manufacturing a microstructured roughened substrate using nanosphere spheres and lasers
S10‧‧‧提供一基板 S10‧‧‧ provides a substrate
S20‧‧‧鋪設微型球體 S20‧‧‧ laying miniature spheres
S30‧‧‧進行雷射照射蝕刻 S30‧‧‧Laser illumination etching
S40‧‧‧移除微型球體並形成粗糙化基板 S40‧‧‧Remove the microspheres and form a roughened substrate
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