TW201615628A - Composition and method for electrodepositing gold containing layers - Google Patents
Composition and method for electrodepositing gold containing layers Download PDFInfo
- Publication number
- TW201615628A TW201615628A TW104127802A TW104127802A TW201615628A TW 201615628 A TW201615628 A TW 201615628A TW 104127802 A TW104127802 A TW 104127802A TW 104127802 A TW104127802 A TW 104127802A TW 201615628 A TW201615628 A TW 201615628A
- Authority
- TW
- Taiwan
- Prior art keywords
- gold
- composition
- substrate
- mercaptotriazole
- plating
- Prior art date
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- 239000010931 gold Substances 0.000 title claims abstract description 210
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 208
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 188
- 239000000203 mixture Substances 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 48
- 229910001020 Au alloy Inorganic materials 0.000 claims abstract description 86
- 239000003353 gold alloy Substances 0.000 claims abstract description 86
- -1 mercapto-triazole com-pounds Chemical class 0.000 claims abstract description 77
- 238000000151 deposition Methods 0.000 claims abstract description 28
- 239000000654 additive Substances 0.000 claims abstract description 8
- 230000000996 additive effect Effects 0.000 claims abstract description 6
- 238000007747 plating Methods 0.000 claims description 143
- 239000000758 substrate Substances 0.000 claims description 87
- 238000009713 electroplating Methods 0.000 claims description 62
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 56
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 claims description 51
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 45
- 239000010949 copper Substances 0.000 claims description 45
- 229910052802 copper Inorganic materials 0.000 claims description 45
- 229910052759 nickel Inorganic materials 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 150000003839 salts Chemical class 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 18
- 238000004070 electrodeposition Methods 0.000 claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 13
- 229910021645 metal ion Inorganic materials 0.000 claims description 12
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 10
- 238000005275 alloying Methods 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 6
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 5
- 238000003618 dip coating Methods 0.000 claims description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- 230000002087 whitening effect Effects 0.000 claims description 5
- 229910001413 alkali metal ion Inorganic materials 0.000 claims description 4
- 150000001412 amines Chemical group 0.000 claims description 4
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 239000008139 complexing agent Substances 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 4
- 125000001624 naphthyl group Chemical group 0.000 claims description 4
- 229920006395 saturated elastomer Polymers 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910001415 sodium ion Inorganic materials 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 229910001424 calcium ion Inorganic materials 0.000 claims description 2
- 229910001414 potassium ion Inorganic materials 0.000 claims description 2
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 claims 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 claims 1
- 125000002943 quinolinyl group Chemical class N1=C(C=CC2=CC=CC=C12)* 0.000 claims 1
- 238000007654 immersion Methods 0.000 abstract description 49
- 239000000463 material Substances 0.000 abstract description 5
- SFOSJWNBROHOFJ-UHFFFAOYSA-N cobalt gold Chemical compound [Co].[Au] SFOSJWNBROHOFJ-UHFFFAOYSA-N 0.000 description 46
- 238000006243 chemical reaction Methods 0.000 description 45
- 229910000531 Co alloy Inorganic materials 0.000 description 35
- 230000008021 deposition Effects 0.000 description 19
- 239000002253 acid Substances 0.000 description 17
- LLCOQBODWBFTDD-UHFFFAOYSA-N 1h-triazol-1-ium-4-thiolate Chemical compound SC1=CNN=N1 LLCOQBODWBFTDD-UHFFFAOYSA-N 0.000 description 14
- 239000000047 product Substances 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- 229910052783 alkali metal Inorganic materials 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 159000000000 sodium salts Chemical class 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 7
- 150000003222 pyridines Chemical class 0.000 description 7
- 150000003248 quinolines Chemical class 0.000 description 7
- 239000011734 sodium Chemical group 0.000 description 7
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 229910052700 potassium Inorganic materials 0.000 description 6
- 239000011591 potassium Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical group C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- NRTDAKURTMLAFN-UHFFFAOYSA-N potassium;gold(3+);tetracyanide Chemical compound [K+].[Au+3].N#[C-].N#[C-].N#[C-].N#[C-] NRTDAKURTMLAFN-UHFFFAOYSA-N 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 238000004876 x-ray fluorescence Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- SMWDFEZZVXVKRB-UHFFFAOYSA-N anhydrous quinoline Natural products N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 4
- 150000007514 bases Chemical class 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- IZLAVFWQHMDDGK-UHFFFAOYSA-N gold(1+);cyanide Chemical compound [Au+].N#[C-] IZLAVFWQHMDDGK-UHFFFAOYSA-N 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- VMDSWYDTKFSTQH-UHFFFAOYSA-N sodium;gold(1+);dicyanide Chemical compound [Na+].[Au+].N#[C-].N#[C-] VMDSWYDTKFSTQH-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910001096 P alloy Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 235000015165 citric acid Nutrition 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 3
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 3
- KZVLNAGYSAKYMG-UHFFFAOYSA-N pyridine-2-sulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=N1 KZVLNAGYSAKYMG-UHFFFAOYSA-N 0.000 description 3
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 description 3
- VPTUPAVOBUEXMZ-UHFFFAOYSA-N (1-hydroxy-2-phosphonoethyl)phosphonic acid Chemical compound OP(=O)(O)C(O)CP(O)(O)=O VPTUPAVOBUEXMZ-UHFFFAOYSA-N 0.000 description 2
- WYENVTYBQKCILL-UHFFFAOYSA-N 1,2,4-triazolidine-3,5-dithione Chemical compound S=C1NNC(=S)N1 WYENVTYBQKCILL-UHFFFAOYSA-N 0.000 description 2
- AGWWTUWTOBEQFE-UHFFFAOYSA-N 4-methyl-1h-1,2,4-triazole-5-thione Chemical compound CN1C=NN=C1S AGWWTUWTOBEQFE-UHFFFAOYSA-N 0.000 description 2
- JRLMMJNORORYPO-UHFFFAOYSA-N 5-phenyl-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound N1C(S)=NC(C=2C=CC=CC=2)=N1 JRLMMJNORORYPO-UHFFFAOYSA-N 0.000 description 2
- BDDLHHRCDSJVKV-UHFFFAOYSA-N 7028-40-2 Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O BDDLHHRCDSJVKV-UHFFFAOYSA-N 0.000 description 2
- XNSPQPOQXWCGKC-UHFFFAOYSA-N C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.[N] Chemical compound C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.[N] XNSPQPOQXWCGKC-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 2
- PQUCIEFHOVEZAU-UHFFFAOYSA-N Diammonium sulfite Chemical compound [NH4+].[NH4+].[O-]S([O-])=O PQUCIEFHOVEZAU-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 2
- WOFVPNPAVMKHCX-UHFFFAOYSA-N N#C[Au](C#N)C#N Chemical class N#C[Au](C#N)C#N WOFVPNPAVMKHCX-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- DFPAKSUCGFBDDF-ZQBYOMGUSA-N [14c]-nicotinamide Chemical compound N[14C](=O)C1=CC=CN=C1 DFPAKSUCGFBDDF-ZQBYOMGUSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 229910002065 alloy metal Inorganic materials 0.000 description 2
- LJJNEPKMBSUEND-UHFFFAOYSA-O azanium;gold;cyanide Chemical compound [NH4+].[Au].N#[C-] LJJNEPKMBSUEND-UHFFFAOYSA-O 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000002659 electrodeposit Substances 0.000 description 2
- BEFDCLMNVWHSGT-UHFFFAOYSA-N ethenylcyclopentane Chemical compound C=CC1CCCC1 BEFDCLMNVWHSGT-UHFFFAOYSA-N 0.000 description 2
- 150000002344 gold compounds Chemical class 0.000 description 2
- CBMIPXHVOVTTTL-UHFFFAOYSA-N gold(3+) Chemical compound [Au+3] CBMIPXHVOVTTTL-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- TWBYWOBDOCUKOW-UHFFFAOYSA-N isonicotinic acid Chemical compound OC(=O)C1=CC=NC=C1 TWBYWOBDOCUKOW-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 2
- BHZRJJOHZFYXTO-UHFFFAOYSA-L potassium sulfite Chemical compound [K+].[K+].[O-]S([O-])=O BHZRJJOHZFYXTO-UHFFFAOYSA-L 0.000 description 2
- 235000019252 potassium sulphite Nutrition 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- OYSBZLVHMPNJMR-UHFFFAOYSA-N pyridine-3-carboxylic acid Chemical compound OC(=O)C1=CC=CN=C1.OC(=O)C1=CC=CN=C1 OYSBZLVHMPNJMR-UHFFFAOYSA-N 0.000 description 2
- DVECLMOWYVDJRM-UHFFFAOYSA-N pyridine-3-sulfonic acid Chemical compound OS(=O)(=O)C1=CC=CN=C1 DVECLMOWYVDJRM-UHFFFAOYSA-N 0.000 description 2
- ZKIHLVYBGPFUAD-UHFFFAOYSA-N quinoline-2-sulfonic acid Chemical compound C1=CC=CC2=NC(S(=O)(=O)O)=CC=C21 ZKIHLVYBGPFUAD-UHFFFAOYSA-N 0.000 description 2
- GJAWHXHKYYXBSV-UHFFFAOYSA-N quinolinic acid Chemical compound OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004334 sorbic acid Substances 0.000 description 2
- 235000010199 sorbic acid Nutrition 0.000 description 2
- 229940075582 sorbic acid Drugs 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 2
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 2
- TVUJVLMAZLPPTJ-UHFFFAOYSA-N triazolidine-4,5-dithione Chemical compound SC=1N=NNC=1S TVUJVLMAZLPPTJ-UHFFFAOYSA-N 0.000 description 2
- XRLUJVFOGKUSMQ-ZVGUSBNCSA-L (2r,3r)-2,3-dihydroxybutanedioate;nickel(2+) Chemical compound [Ni+2].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O XRLUJVFOGKUSMQ-ZVGUSBNCSA-L 0.000 description 1
- 125000004642 (C1-C12) alkoxy group Chemical group 0.000 description 1
- 125000006755 (C2-C20) alkyl group Chemical group 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- HNTZKNJGAFJMHQ-UHFFFAOYSA-N 2-methylpyridine-3-carboxylic acid Chemical compound CC1=NC=CC=C1C(O)=O HNTZKNJGAFJMHQ-UHFFFAOYSA-N 0.000 description 1
- KSXHZOTTWSNEHY-UHFFFAOYSA-N 3-[3-(2-cyanoethoxy)-2,2-bis(2-cyanoethoxymethyl)propoxy]propanenitrile Chemical group N#CCCOCC(COCCC#N)(COCCC#N)COCCC#N KSXHZOTTWSNEHY-UHFFFAOYSA-N 0.000 description 1
- NNNRGWOWXNCGCV-UHFFFAOYSA-N 4-(2-bromoethyl)benzonitrile Chemical compound BrCCC1=CC=C(C#N)C=C1 NNNRGWOWXNCGCV-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- HTJDQJBWANPRPF-UHFFFAOYSA-N Cyclopropylamine Chemical group NC1CC1 HTJDQJBWANPRPF-UHFFFAOYSA-N 0.000 description 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Divinylene sulfide Natural products C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910003771 Gold(I) chloride Inorganic materials 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical class [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 238000007545 Vickers hardness test Methods 0.000 description 1
- UCFIGPFUCRUDII-UHFFFAOYSA-N [Co](C#N)C#N.[K] Chemical compound [Co](C#N)C#N.[K] UCFIGPFUCRUDII-UHFFFAOYSA-N 0.000 description 1
- RXSPKSMQHLNUSU-UHFFFAOYSA-H [Na+].[Na+].[Na+].[Au+3].[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S Chemical compound [Na+].[Na+].[Na+].[Au+3].[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S RXSPKSMQHLNUSU-UHFFFAOYSA-H 0.000 description 1
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 1
- YQVABBKBRUQDGB-UHFFFAOYSA-J [O-]C#N.[O-]C#N.[O-]C#N.[O-]C#N.[K+].[K+].[K+].[K+] Chemical compound [O-]C#N.[O-]C#N.[O-]C#N.[O-]C#N.[K+].[K+].[K+].[K+] YQVABBKBRUQDGB-UHFFFAOYSA-J 0.000 description 1
- GOKIPOOTKLLKDI-UHFFFAOYSA-N acetic acid;iron Chemical compound [Fe].CC(O)=O.CC(O)=O.CC(O)=O GOKIPOOTKLLKDI-UHFFFAOYSA-N 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-N acetoacetic acid Chemical compound CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- ICAIHGOJRDCMHE-UHFFFAOYSA-O ammonium cyanide Chemical compound [NH4+].N#[C-] ICAIHGOJRDCMHE-UHFFFAOYSA-O 0.000 description 1
- GABPAXJCPQEORA-UHFFFAOYSA-K azanium;gold(3+);disulfite Chemical compound [NH4+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O GABPAXJCPQEORA-UHFFFAOYSA-K 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- MUYSADWCWFFZKR-UHFFFAOYSA-N cinchomeronic acid Chemical compound OC(=O)C1=CC=NC=C1C(O)=O MUYSADWCWFFZKR-UHFFFAOYSA-N 0.000 description 1
- 229910021446 cobalt carbonate Inorganic materials 0.000 description 1
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 1
- 229940049699 cobalt gluconate Drugs 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- ZOTKGJBKKKVBJZ-UHFFFAOYSA-L cobalt(2+);carbonate Chemical compound [Co+2].[O-]C([O-])=O ZOTKGJBKKKVBJZ-UHFFFAOYSA-L 0.000 description 1
- BZRRQSJJPUGBAA-UHFFFAOYSA-L cobalt(ii) bromide Chemical compound Br[Co]Br BZRRQSJJPUGBAA-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- APPGOBAFZQRKEX-UHFFFAOYSA-N diazanium dioxido-oxo-sulfanylidene-lambda6-sulfane sulfuric acid Chemical compound S(=S)(=O)([O-])[O-].[NH4+].S(=O)(=O)(O)O.[NH4+] APPGOBAFZQRKEX-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- ADPOBOOHCUVXGO-UHFFFAOYSA-H dioxido-oxo-sulfanylidene-$l^{6}-sulfane;gold(3+) Chemical class [Au+3].[Au+3].[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S ADPOBOOHCUVXGO-UHFFFAOYSA-H 0.000 description 1
- FGRVOLIFQGXPCT-UHFFFAOYSA-L dipotassium;dioxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [K+].[K+].[O-]S([O-])(=O)=S FGRVOLIFQGXPCT-UHFFFAOYSA-L 0.000 description 1
- 150000004662 dithiols Chemical group 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- VEPSWGHMGZQCIN-UHFFFAOYSA-H ferric oxalate Chemical compound [Fe+3].[Fe+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O VEPSWGHMGZQCIN-UHFFFAOYSA-H 0.000 description 1
- CADNYOZXMIKYPR-UHFFFAOYSA-B ferric pyrophosphate Chemical compound [Fe+3].[Fe+3].[Fe+3].[Fe+3].[O-]P([O-])(=O)OP([O-])([O-])=O.[O-]P([O-])(=O)OP([O-])([O-])=O.[O-]P([O-])(=O)OP([O-])([O-])=O CADNYOZXMIKYPR-UHFFFAOYSA-B 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- NPEWZDADCAZMNF-UHFFFAOYSA-N gold iron Chemical compound [Fe].[Au] NPEWZDADCAZMNF-UHFFFAOYSA-N 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- RJHLTVSLYWWTEF-UHFFFAOYSA-K gold trichloride Chemical compound Cl[Au](Cl)Cl RJHLTVSLYWWTEF-UHFFFAOYSA-K 0.000 description 1
- ZBKIUFWVEIBQRT-UHFFFAOYSA-N gold(1+) Chemical class [Au+] ZBKIUFWVEIBQRT-UHFFFAOYSA-N 0.000 description 1
- SRCZENKQCOSNAI-UHFFFAOYSA-H gold(3+);trisulfite Chemical class [Au+3].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O.[O-]S([O-])=O SRCZENKQCOSNAI-UHFFFAOYSA-H 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N iron (II) ion Substances [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 229910000398 iron phosphate Inorganic materials 0.000 description 1
- 229910000358 iron sulfate Inorganic materials 0.000 description 1
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 description 1
- NPFOYSMITVOQOS-UHFFFAOYSA-K iron(III) citrate Chemical compound [Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NPFOYSMITVOQOS-UHFFFAOYSA-K 0.000 description 1
- GYCHYNMREWYSKH-UHFFFAOYSA-L iron(ii) bromide Chemical compound [Fe+2].[Br-].[Br-] GYCHYNMREWYSKH-UHFFFAOYSA-L 0.000 description 1
- BQZGVMWPHXIKEQ-UHFFFAOYSA-L iron(ii) iodide Chemical compound [Fe+2].[I-].[I-] BQZGVMWPHXIKEQ-UHFFFAOYSA-L 0.000 description 1
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000011777 magnesium Chemical class 0.000 description 1
- 229910052749 magnesium Chemical class 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910000159 nickel phosphate Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- UQPSGBZICXWIAG-UHFFFAOYSA-L nickel(2+);dibromide;trihydrate Chemical compound O.O.O.Br[Ni]Br UQPSGBZICXWIAG-UHFFFAOYSA-L 0.000 description 1
- JOCJYBPHESYFOK-UHFFFAOYSA-K nickel(3+);phosphate Chemical compound [Ni+3].[O-]P([O-])([O-])=O JOCJYBPHESYFOK-UHFFFAOYSA-K 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 235000001968 nicotinic acid Nutrition 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 229960003512 nicotinic acid Drugs 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 1
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical group [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 1
- RRDWZGMHSCBIGX-UHFFFAOYSA-J potassium;gold(3+);disulfite Chemical compound [K+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O RRDWZGMHSCBIGX-UHFFFAOYSA-J 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- PTWLOSARXIJRRJ-UHFFFAOYSA-N pyridin-1-ium-4-sulfonate Chemical compound OS(=O)(=O)C1=CC=NC=C1 PTWLOSARXIJRRJ-UHFFFAOYSA-N 0.000 description 1
- DJXNJVFEFSWHLY-UHFFFAOYSA-N quinoline-3-carboxylic acid Chemical compound C1=CC=CC2=CC(C(=O)O)=CN=C21 DJXNJVFEFSWHLY-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- ZWZLRIBPAZENFK-UHFFFAOYSA-J sodium;gold(3+);disulfite Chemical compound [Na+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O ZWZLRIBPAZENFK-UHFFFAOYSA-J 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- ILAVZBMETAVWCZ-UHFFFAOYSA-H tripotassium dioxido-oxo-sulfanylidene-lambda6-sulfane gold(3+) Chemical compound [K+].[K+].[K+].[Au+3].[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S ILAVZBMETAVWCZ-UHFFFAOYSA-H 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/16—Regeneration of process solutions
- C25D21/18—Regeneration of process solutions of electrolytes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/48—Electroplating: Baths therefor from solutions of gold
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/62—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of gold
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
本發明係關於一種組合物及使用發明的組合物用於電沉積含金之層之方法。發明的組合物含有充當防浸鍍添加劑之巰基三唑化合物。組合物及方法適合於沉積功能性或硬金或金合金,該等合金可作為用於高可靠性應用之電連接器之接觸材料應用於工業中。 This invention relates to a composition and a method of using the composition of the invention for electrodepositing a gold-containing layer. The composition of the invention contains a mercaptotriazole compound that acts as an anti-dip coating additive. The compositions and methods are suitable for depositing functional or hard gold or gold alloys that can be used in the industry as contact materials for electrical connectors for high reliability applications.
鈷及鎳之硬金或金合金已廣泛用作用於高可靠性應用之電連接器之接觸材料。具有硬金端層之連接器因此電鍍於導電金屬層上,例如鎳基板上,諸如鍍敷於銅上之鎳。通常,連接器為較大電子裝置或電線之部分。選擇性電鍍技術用於僅將金層或金合金層沉積於連接器之接觸區域上而不鍍敷電路之剩餘部分。該等選擇性鍍敷技術藉由限制金及其他貴重金屬(諸如鈀及鈀鎳合金)之鍍敷區域顯著降低連接器之材料成本。 Hard gold or gold alloys of cobalt and nickel have been widely used as contact materials for electrical connectors for high reliability applications. The connector with the hard gold end layer is thus plated on a conductive metal layer, such as a nickel substrate, such as nickel plated on copper. Typically, the connector is part of a larger electronic device or wire. A selective plating technique is used to deposit only a gold or gold alloy layer on the contact area of the connector without plating the remainder of the circuit. These selective plating techniques significantly reduce the material cost of the connector by limiting the plating area of gold and other precious metals such as palladium and palladium nickel alloys.
在金為待鍍敷於通常由不太貴重金屬製成之連接器上之貴金屬時,產生金置換之問題。金置換為藉由交換反應沉積金。若待鍍敷金之表面為例如鎳表面,則咸信置換反應按以下發生:2 Au++Ni0 → 2 Au0+Ni2+ The problem of gold replacement occurs when gold is a precious metal to be plated on a connector that is typically made of a less expensive metal. Gold replacement is the deposition of gold by an exchange reaction. If the surface of the gold to be plated is, for example, a nickel surface, the salt displacement reaction occurs as follows: 2 Au + + Ni 0 → 2 Au 0 + Ni 2+
其中貴重的金金屬置換不太貴重的鎳。藉由該交換反應或置換反應之金屬沉積亦稱為浸鍍反應或浸鍍敷。 Among them, precious gold metal replaces the less expensive nickel. Metal deposition by the exchange reaction or displacement reaction is also referred to as immersion plating or immersion plating.
一方面,此問題發生於不鍍敷且因此不電性連接之基板部分或區域之表面上,而電子部分之功能性表面(亦即連接器)為電鍍的。另外,當停止電鍍時,例如在空閑時間期間,可發生浸鍍反應。接著,在不經電性連接之情況下將連接器表面保持在金沉積槽中一段時間。 On the one hand, this problem occurs on the surface of the portion or region of the substrate that is not plated and therefore not electrically connected, while the functional surface (i.e., the connector) of the electronic portion is electroplated. In addition, the immersion plating reaction may occur when plating is stopped, for example, during idle time. Next, the connector surface is held in the gold deposition bath for a period of time without electrical connection.
在兩種情況下,金層藉由浸鍍反應沉積於非連接表面上。因此,金層藉由浸鍍反應在不需要之基板區域沉積。此浸鍍金沉積非吾人所樂見,因為其消耗比塗覆連接器及其他電子部分所需更多的金且因此造成導致較高製造成本之金的額外消耗。 In both cases, the gold layer is deposited on the non-attached surface by a dip plating reaction. Therefore, the gold layer is deposited in the unnecessary substrate region by the immersion plating reaction. This immersion gold plating is not forgotten because it consumes more gold than is required to coat the connectors and other electronic parts and thus results in additional consumption of gold that results in higher manufacturing costs.
沉積於不想鍍敷之印刷電路線、連接器或其他電子裝置之部分上的金層亦可造成基板之缺陷,產生有缺陷最終產品。因此然後必須移除金層,此費力、耗時且成本高。 A gold layer deposited on portions of printed circuit lines, connectors, or other electronic devices that are not intended to be plated can also cause defects in the substrate, resulting in defective end products. Therefore, the gold layer must then be removed, which is laborious, time consuming and costly.
另外,藉由浸鍍反應形成之金層具有對其下伏表面之低黏著度。浸鍍金層之部分自底層表面脫落,當偶然連接單獨電路線或其他接觸金屬時伴以短路之風險。 In addition, the gold layer formed by the immersion plating has a low adhesion to its underlying surface. The portion of the immersion gold layer is detached from the underlying surface, with the risk of shorting when accidentally connecting individual circuit lines or other contact metals.
此外,金浸鍍之問題隨著金電解質年限而增加。 In addition, the problem of gold immersion plating increases with the age of gold electrolyte.
金浸鍍可藉由改進鍍敷設備之設計減少。然而,此要求昂貴花費來重新設計且接著製造新設備部件。 Gold immersion plating can be reduced by improving the design of the plating equipment. However, this requires expensive expense to redesign and then manufacture new equipment components.
歐洲專利EP 2 309 036 B1揭示減少金置換反應之硬金鍍敷槽。作用歸因於包含於鍍敷槽中之巰基四唑化合物。然而,金置換反應之減少仍不足夠。另外,EP 2 309 036 B1未記載金置換隨著金沉積槽之進程年限而增加。 The European patent EP 2 309 036 B1 discloses a hard gold plating bath which reduces the gold displacement reaction. The effect is attributed to the mercaptotetrazole compound contained in the plating bath. However, the reduction in the gold displacement reaction is still insufficient. In addition, EP 2 309 036 B1 does not describe that the gold substitution increases with the length of the gold deposition bath.
因此,針對功能性純金層及金合金層,仍需要抑制電沉積槽中之金浸鍍反應。 Therefore, for the functional pure gold layer and the gold alloy layer, it is still necessary to suppress the gold immersion plating reaction in the electrodeposition bath.
因此,本發明之一目標為提供用於電沉積含金之層伴以進一步減少的金浸鍍反應之組合物及方法。 Accordingly, it is an object of the present invention to provide compositions and methods for electrodepositing gold-containing layers with further reduced gold immersion plating reactions.
本發明之另一目標為提供用於在用於金電沉積之組合物壽命期間減少增加的金浸鍍反應之方法。 Another object of the present invention is to provide a method for reducing the increased gold immersion plating reaction during the life of a composition for gold electroplating.
此等目標藉由以下組合物及方法達成。 These objectives are achieved by the following compositions and methods.
電鍍組合物,其包含(i)至少一種金離子源,及(ii)至少一種巰基三唑或其鹽,其中至少一種巰基三唑具有以下通式(I)或通式(II):
其中R1、R2、R3、R4、R5及R6如下文所定義。 Wherein R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are as defined below.
當電沉積含金之層時,根據(ii)之巰基三唑或其鹽顯著減少或幾乎抑制金浸鍍反應。 When the gold-containing layer is electrodeposited, the mercaptotriazole or its salt according to (ii) significantly reduces or almost inhibits the gold immersion plating reaction.
一種方法,其包含以下步驟:(i)提供如上文所定義之電鍍組合物;(ii)使基板與組合物接觸;及(iii)在基板與至少一個陽極之間施加電流且藉此將金或金合金沉積於基板上。 A method comprising the steps of: (i) providing an electroplating composition as defined above; (ii) contacting a substrate with a composition; and (iii) applying a current between the substrate and the at least one anode and thereby gold Or a gold alloy is deposited on the substrate.
該方法適合於將含金之層電沉積於基板上。該方法顯著減少或幾乎抑制金浸鍍反應。 The method is suitable for electrodepositing a gold-containing layer onto a substrate. This method significantly reduces or almost inhibits the gold immersion plating reaction.
一種方法,其包含:(i)提供經使用之金或金合金電鍍組合物; (ii)將如上文所定義之巰基三唑添加至經使用之金或金合金電鍍組合物中,及(iii)使基板與組合物接觸;及(iv)在基板與至少一個陽極之間施加電流且藉此將金或金合金沉積於基板上。 A method comprising: (i) providing a gold or gold alloy plating composition for use; (ii) adding a mercaptotriazole as defined above to the gold or gold alloy plating composition used, and (iii) contacting the substrate with the composition; and (iv) applying between the substrate and the at least one anode Current and thereby deposit gold or gold alloy on the substrate.
該方法適合於再生經使用之金或金合金電鍍組合物,其中金浸鍍反應達成防止適當金層或金合金層之有效操作且沉積之程度。該方法顯著減少或幾乎抑制金浸鍍反應。 The method is suitable for regenerating a gold or gold alloy plating composition that is used, wherein the gold immersion plating reaction achieves an extent that prevents proper operation of the appropriate gold or gold alloy layer and deposition. This method significantly reduces or almost inhibits the gold immersion plating reaction.
圖1展示藉由浸鍍反應自含有不同巰基唑化合物之電鍍槽沉積之金合金層之厚度。 Figure 1 shows the thickness of a gold alloy layer deposited from a plating bath containing different hydrazol compounds by a immersion plating reaction.
圖2展示藉由浸鍍反應自含有不同巰基三唑化合物之電鍍槽沉積之金合金層之厚度。 Figure 2 shows the thickness of a gold alloy layer deposited from a plating bath containing different mercaptotriazole compounds by a immersion plating reaction.
本發明係關於一種電鍍組合物,其包含(i)至少一種金離子源,及(ii)至少一種巰基三唑或其鹽,其中至少一種巰基三唑具有以下通式(I)或通式(II):
其中R1、R4彼此獨立地為氫、直鏈或分支鏈、飽和或不飽和(C1-C20)烴鏈、(C8-C20)芳烷基;經取代或未經取代之苯基、萘基或羧基; 且R2、R3、R5、R6彼此獨立地為-S-X、氫、直鏈或分支鏈、飽和或不飽和(C1-C20)烴鏈、(C8-C20)芳烷基;經取代或未經取代之苯基、萘基或羧基;且X為氫、(C1-C4)烷基或選自鹼金屬離子、鈣離子、銨離子及四級胺之抗衡離子,且R2及R3中之至少一個為-S-X,且R5及R6中之至少一個為-S-X。 Wherein R 1 and R 4 are, independently of each other, hydrogen, straight or branched chain, saturated or unsaturated (C 1 -C 20 ) hydrocarbon chain, (C 8 -C 20 ) aralkyl; substituted or unsubstituted Phenyl, naphthyl or carboxy; and R 2 , R 3 , R 5 , R 6 are each independently -SX, hydrogen, straight or branched, saturated or unsaturated (C 1 -C 20 ) hydrocarbon chain, ( C 8 -C 20 )Aralkyl; substituted or unsubstituted phenyl, naphthyl or carboxyl; and X is hydrogen, (C 1 -C 4 )alkyl or selected from alkali metal ions, calcium ions, ammonium a counter ion of an ion and a quaternary amine, and at least one of R 2 and R 3 is -SX, and at least one of R 5 and R 6 is -SX.
電鍍組合物適合於將含金之層電沉積於基板上。含金之層可為純金層或金合金層。較佳地,含金之層為金合金層。更佳地,含金之層為用作所謂的功能性或硬金層之金合金層。功能性或硬金層具有高機械穩定性且因此尤其耐機械磨損。金層及尤其金合金層因此適合用於電連接器。 The electroplating composition is suitable for electrodepositing a gold-containing layer onto a substrate. The gold-containing layer may be a pure gold layer or a gold alloy layer. Preferably, the gold-containing layer is a gold alloy layer. More preferably, the gold-containing layer is a gold alloy layer used as a so-called functional or hard gold layer. The functional or hard gold layer has a high mechanical stability and is therefore particularly resistant to mechanical wear. Gold layers and especially gold alloy layers are therefore suitable for use in electrical connectors.
當電沉積含金之層時,根據(ii)之巰基三唑或其鹽顯著減少或幾乎抑制金浸鍍反應。 When the gold-containing layer is electrodeposited, the mercaptotriazole or its salt according to (ii) significantly reduces or almost inhibits the gold immersion plating reaction.
在一個實施例中,X較佳為選自鹼金屬離子之抗衡離子,其中鹼金屬離子係選自鈉離子、鉀離子及鋰離子。 In one embodiment, X is preferably a counterion selected from the group consisting of alkali metal ions selected from the group consisting of sodium ions, potassium ions, and lithium ions.
在另一實施例中,R1、R2、R3、R4、R5、R6之經取代苯基或萘基之取代基獨立地選自分支鏈或未分支(C1-C12)烷基、分支鏈或未分支(C2-C20)伸烷基、分支鏈或未分支(C1-C12)烷氧基;羥基及鹵素。在另一實施例中,鹵素係選自氯及溴。 In another embodiment, the substituted phenyl or naphthyl substituent of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 is independently selected from the group consisting of branched or unbranched (C 1 -C 12 An alkyl group, a branched chain or an unbranched (C 2 -C 20 ) alkyl group, a branched chain or an unbranched (C 1 -C 12 ) alkoxy group; a hydroxyl group and a halogen. In another embodiment, the halogen is selected from the group consisting of chlorine and bromine.
在溶液中,式(I)巰基三唑可以兩種互變異構形式存在:
式(I)因此包含兩種互變異構形式。當R1為H原子時互變異構形式尤其相關。 Formula (I) thus contains two tautomeric forms. The tautomeric form is especially relevant when R 1 is a H atom.
在一較佳實施例中,至少一種巰基三唑具有通式(I)或通式(II),其中R1、R4彼此獨立地為氫或直鏈(C1-C4)烷基,且R2、R3、R5、R6彼此獨立地為-S-X、氫或直鏈(C1-C4)烷基;且X為氫、甲基、乙基或選自鈉離子及鉀離子之抗衡離子;且R2及R3中之至少一個為-S-X,且R5及R6中之至少一個為-S-X。 In a preferred embodiment, at least one mercaptotriazole has the formula (I) or formula (II), wherein R 1 and R 4 are each independently hydrogen or a linear (C 1 -C 4 ) alkyl group, And R 2 , R 3 , R 5 , R 6 are each independently -SX, hydrogen or a linear (C 1 -C 4 )alkyl group; and X is hydrogen, methyl, ethyl or selected from sodium ions and potassium a counter ion of ions; and at least one of R 2 and R 3 is -SX, and at least one of R 5 and R 6 is -SX.
在另一較佳實施例中,至少一種巰基三唑具有通式(I)或通式(II),其中R1、R4彼此獨立地為氫、甲基或乙基,且R2、R3、R5、R6彼此獨立地為-S-X、氫、甲基或乙基,且X為氫、鈉離子或鉀離子;且R2及R3中之至少一個為-S-X,且R5及R6中之至少一個為-S-X。 In another preferred embodiment, at least one mercaptotriazole has the formula (I) or formula (II), wherein R 1 and R 4 are independently of each other hydrogen, methyl or ethyl, and R 2 , R 3 , R 5 and R 6 are each independently -SX, hydrogen, methyl or ethyl, and X is hydrogen, sodium or potassium; and at least one of R 2 and R 3 is -SX, and R 5 And at least one of R 6 is -SX.
在另一較佳實施例中,至少一種巰基三唑具有通式(I)或通式(II),其中R1、R4彼此獨立地為氫或甲基,且R2、R3、R5、R6彼此獨立地為-S-X、氫或甲基,且X為氫、鈉離子或鉀離子;且R2及R3中之至少一個為-S-X,且R5及R6中之至少一個為-S-X。 In another preferred embodiment, at least one mercaptotriazole has the formula (I) or formula (II), wherein R 1 and R 4 are independently of each other hydrogen or methyl, and R 2 , R 3 , R 5 , R 6 is independently -SX, hydrogen or methyl, and X is hydrogen, sodium or potassium; and at least one of R 2 and R 3 is -SX, and at least R 5 and R 6 One is -SX.
在一更佳實施例中,至少一種巰基三唑具有通式(I),其中R1、R2、R3及X具有如上文所定義之含義。 In a more preferred embodiment, at least one mercaptotriazole has the general formula (I) wherein R 1 , R 2 , R 3 and X have the meanings as defined above.
在一甚至更佳實施例中,至少一種巰基三唑選自包含以下各者之群:5-巰基-1,2,3-三唑;4,5-二巰基-1,2,3-三唑;5-巰基-1,2,4-三唑;3-巰基-1,2,4-三唑;3,5-二巰基-1,2,4-三唑;3-巰基-4-甲基-1,2,4-三唑;5-苯基-1H-1,2,4-三唑-3-硫醇及其鹽。 In an even more preferred embodiment, the at least one mercaptotriazole is selected from the group consisting of: 5-mercapto-1,2,3-triazole; 4,5-dimercapto-1,2,3-tri Azole; 5-mercapto-1,2,4-triazole; 3-mercapto-1,2,4-triazole; 3,5-dimercapto-1,2,4-triazole; 3-mercapto-4- Methyl-1,2,4-triazole; 5-phenyl-1H-1,2,4-triazole-3-thiol and salts thereof.
在一甚至更佳實施例中,至少一種巰基三唑選自包含以下各者之群:5-巰基-1,2,3-三唑;4,5-二巰基-1,2,3-三唑;5-巰基-1,2,4-三唑;3-巰基-1,2,4-三唑;3,5-二巰基-1,2,4-三唑及其鹽。 In an even more preferred embodiment, the at least one mercaptotriazole is selected from the group consisting of: 5-mercapto-1,2,3-triazole; 4,5-dimercapto-1,2,3-tri Azole; 5-mercapto-1,2,4-triazole; 3-mercapto-1,2,4-triazole; 3,5-dimercapto-1,2,4-triazole and its salts.
在一甚至更佳實施例中,至少一種巰基三唑係選自5-巰基-1,2,3-三唑;3-巰基-4-甲基-1,2,4-三唑;5-苯基-1H-1,2,4-三唑-3-硫醇;3-巰基-1,2,4-三唑及其鹽。 In an even more preferred embodiment, the at least one mercaptotriazole is selected from the group consisting of 5-mercapto-1,2,3-triazole; 3-mercapto-4-methyl-1,2,4-triazole; 5- Phenyl-1H-1,2,4-triazole-3-thiol; 3-mercapto-1,2,4-triazole and its salts.
在一甚至更佳實施例中,至少一種巰基三唑係選自5-巰基-1,2,3- 三唑及其鹽。巰基三唑化合物可商購或可藉由此項技術中熟知之方法製備。 In an even more preferred embodiment, the at least one mercaptotriazole is selected from the group consisting of 5-mercapto-1,2,3- Triazole and its salts. The mercaptotriazole compounds are either commercially available or can be prepared by methods well known in the art.
在一個實施例中,至少一種巰基三唑在電鍍組合物中具有在1mg/l至1g/l範圍內之濃度。較佳地,濃度小於1g/l。更佳地,濃度在1mg/l至900mg/l、甚至更佳1mg/l至500mg/l、甚至更佳5mg/l至100mg/l、甚至更佳20mg/l至100mg/l之範圍內。若至少一種巰基三唑之濃度過高,則含金之層之電沉積得到完全防止或電沉積金層或金合金層不充分黏著至基板表面。 In one embodiment, at least one mercaptotriazole has a concentration in the electroplating composition ranging from 1 mg/l to 1 g/l. Preferably, the concentration is less than 1 g/l. More preferably, the concentration is in the range of from 1 mg/l to 900 mg/l, even more preferably from 1 mg/l to 500 mg/l, even more preferably from 5 mg/l to 100 mg/l, even more preferably from 20 mg/l to 100 mg/l. If the concentration of at least one mercaptotriazole is too high, electrodeposition of the gold-containing layer is completely prevented or the electrodeposited gold or gold alloy layer is not sufficiently adhered to the surface of the substrate.
將一或多種巰基三唑添加至金或金合金電鍍組合物抑制了金浸鍍反應,同時不損害金合金外觀。另外,金層或硬金層之功能性特性(諸如接觸電阻及硬度)亦不受損。接觸電阻維持在所需低水準下且金層對用於電子裝置之商用電觸點而言足夠硬。另外,藉由將一或多種根據本發明之巰基三唑添加至金或金合金電鍍組合物,金層或硬金層、尤其硬金層之高耐磨性之有利功能性特性亦不受損。 The addition of one or more mercaptotriazoles to the gold or gold alloy plating composition inhibits the gold immersion plating reaction without impairing the appearance of the gold alloy. In addition, the functional properties of the gold or hard gold layer, such as contact resistance and hardness, are not impaired. The contact resistance is maintained at the desired low level and the gold layer is sufficiently hard for commercial electrical contacts for electronic devices. In addition, by adding one or more mercaptotriazoles according to the invention to a gold or gold alloy electroplating composition, the advantageous functional properties of the high wear resistance of the gold or hard gold layer, especially the hard gold layer, are not impaired. .
電鍍組合物進一步包含(i)至少一種金離子源。金離子源可選自金(I)離子源及金(III)離子源。金(I)離子源可選自包含金氰化物化合物、金硫代硫酸鹽化合物、金亞硫酸鹽化合物及金(I)鹵化物之金(I)鹽之群。金氰化物化合物可選自諸如氰化金鉀或氰化金鈉之鹼金屬金氰化物;及氰化金銨。金硫代硫酸鹽化合物可選自諸如金硫代硫酸三鈉或金硫代硫酸三鉀之硫代硫酸金鹼金屬。金亞硫酸鹽化合物可選自諸如亞硫酸金鈉或亞硫酸金鉀之亞硫酸金鹼金屬;及亞硫酸金銨。金(I)鹵化物可為氯化金(I)。金(III)離子源可為金(III)鹵化物,諸如三氯化金(III)。較佳地,金離子源為鹼金屬金氰化物化合物,諸如氰化金鉀或氰化金鈉。更佳地,金離子源為氰化金鉀,諸如二氰基金(I)酸鉀或四氰基金(III)酸鉀;或氰化金鈉,諸如二氰基金(I)酸鈉或四氰基金(III)酸鈉。甚至更佳地,金離子源為二氰基金(I)酸鉀或四氰基金(III) 酸鉀。氰化金鉀比其他金化合物具有更好可溶性。 The electroplating composition further comprises (i) at least one source of gold ions. The gold ion source can be selected from the group consisting of a gold (I) ion source and a gold (III) ion source. The gold (I) ion source may be selected from the group consisting of gold cyanide compounds, gold thiosulfate compounds, gold sulfite compounds, and gold (I) salts of gold (I) halides. The gold cyanide compound may be selected from alkali metal gold cyanide such as gold potassium cyanide or gold sodium cyanide; and gold ammonium cyanide. The gold thiosulfate compound may be selected from a thiosulfate gold alkali metal such as trisodium gold thiosulfate or tripotassium gold thiosulfate. The gold sulfite compound may be selected from gold alkali metal sulfites such as gold sodium sulfite or gold potassium sulfite; and gold ammonium sulfite. The gold (I) halide may be gold (I) chloride. The gold (III) ion source can be a gold (III) halide such as gold (III) trichloride. Preferably, the source of gold ions is an alkali metal gold cyanide compound such as gold potassium cyanide or gold sodium cyanide. More preferably, the gold ion source is potassium gold cyanide, such as potassium diiodide (I) or potassium tetracyanate (III); or sodium gold cyanide, such as sodium dicyanohydride (I) or tetracyanate Fund (III) sodium. Even better, the gold ion source is dicyanoic acid (I) potassium or tetracyano fund (III) Potassium acid. Gold potassium cyanide has better solubility than other gold compounds.
在一個實施例中,其中自本發明之電鍍組合物沉積之金合金層為硬金層,金離子源較佳為金氰化物化合物,更佳為諸如氰化金鉀或氰化金鈉之鹼金屬金氰化物;或氰化金銨。若金離子源為金氰化物化合物,則具有高金含量之功能性或硬金合金層之電沉積為最可能的。在此情況下,金離子以金氰化物錯合物形式、較佳作為金氰化物鹼金屬離子之錯合物、更佳作為氰化金鉀離子之錯合物含於電鍍組合物中,其尤其適合於電沉積具有高金含量之硬金合金層。同樣適用於自與高電流密度一起使用之電解質電沉積含金之層,因為除金氰化物錯合物、鹼金屬金氰化物離子錯合物或氰化金鉀離子錯合物外之金化合物在高電流密度下較不穩定。 In one embodiment, wherein the gold alloy layer deposited from the electroplating composition of the present invention is a hard gold layer, the gold ion source is preferably a gold cyanide compound, more preferably a base such as gold potassium cyanide or gold sodium cyanide. Metal gold cyanide; or gold ammonium cyanide. If the gold ion source is a gold cyanide compound, electrodeposition with a high gold content or hard gold alloy layer is most likely. In this case, the gold ion is contained in the electroplating composition in the form of a gold cyanide complex, preferably as a complex of a gold cyanide alkali metal ion, and more preferably as a complex of gold potassium cyanide. It is especially suitable for electrodepositing hard gold alloy layers with a high gold content. The same applies to electrolyte-deposited gold-containing layers used with high current densities because of gold compounds other than gold cyanide complexes, alkali metal gold cyanide ion complexes or gold cyanide ion complexes. It is less stable at high current densities.
在一個實施例中,至少一種金離子源在電鍍組合物中具有在1g/l至50g/l範圍內、較佳在5g/l至50g/l範圍內、更佳在10g/l至50g/l範圍內、甚至更佳在5g/l至30g/l範圍內、又甚至更佳在5g/l至20g/l範圍內、又甚至更佳在10g/l至20g/l範圍內之濃度。電鍍組合物藉由浸鍍反應沉積金之傾向隨著包含於組合物中之金濃度增加而增加。 In one embodiment, the at least one source of gold ions has a range of from 1 g/l to 50 g/l, preferably from 5 g/l to 50 g/l, more preferably from 10 g/l to 50 g/in the electroplating composition. A concentration in the range of 5 g/l to 30 g/l, even more preferably in the range of 5 g/l to 20 g/l, even more preferably in the range of 10 g/l to 20 g/l. The tendency of the electroplating composition to deposit gold by the immersion plating reaction increases as the concentration of gold contained in the composition increases.
在一個實施例中,電鍍組合物可進一步包含用於金離子之錯合劑。用於金離子之錯合劑係選自鹼金屬氰化物,諸如氰化鉀、氰化鈉及氰化銨;硫代硫酸及其鹽,諸如硫代硫酸鈉、硫代硫酸鉀及硫代硫酸銨;亞硫酸及其鹽,諸如亞硫酸鉀、亞硫酸銨;羧酸,諸如山梨酸;羥基羧酸,諸如檸檬酸及丙二酸;胺基羧酸,諸如乙二胺四乙酸、亞胺二乙酸、氮基三乙酸、1,2-二胺基環己烷四乙酸、雙-2-胺基乙醚四乙酸、二伸乙三胺五乙酸;無機酸,諸如磷酸、硫酸、硼酸;膦酸,諸如1-羥基乙烷-1,1-二膦酸、1-羥基乙烷-1,2-二膦酸、胺基三亞甲基膦酸、乙二胺四甲基膦酸、六亞甲基二胺基四甲基膦酸;及前述酸之鹽,諸如鹼金屬鹽及鹼土金屬鹽;較佳鈉鹽及鉀鹽;胺,諸如 四伸乙基五胺、三伸乙基四胺、三乙胺、二伸乙基三胺及乙二胺。錯合劑亦可充當導電鹽。 In one embodiment, the electroplating composition may further comprise a binder for gold ions. The complexing agent for gold ions is selected from the group consisting of alkali metal cyanides such as potassium cyanide, sodium cyanide and ammonium cyanide; thiosulfuric acid and salts thereof, such as sodium thiosulfate, potassium thiosulfate and ammonium thiosulfate Sulfuric acid and its salts, such as potassium sulfite, ammonium sulfite; carboxylic acids such as sorbic acid; hydroxycarboxylic acids such as citric acid and malonic acid; aminocarboxylic acids such as ethylenediaminetetraacetic acid, imine Acetic acid, nitrogen triacetic acid, 1,2-diaminocyclohexanetetraacetic acid, bis-2-aminoethyl ether tetraacetic acid, diethylenetriamine pentaacetic acid; inorganic acids such as phosphoric acid, sulfuric acid, boric acid; , such as 1-hydroxyethane-1,1-diphosphonic acid, 1-hydroxyethane-1,2-diphosphonic acid, aminotrimethylenephosphonic acid, ethylenediaminetetramethylphosphonic acid, hexamethylene a diaminotetramethylphosphonic acid; and a salt of the foregoing, such as an alkali metal salt and an alkaline earth metal salt; preferably a sodium salt and a potassium salt; an amine such as Tetraethylamine, tri-ethyltetramine, triethylamine, diethyltriamine and ethylenediamine. The wrong agent can also act as a conductive salt.
在金離子源為鹼金屬金氰化物化合物之一個實施例中,錯合劑較佳無氰化物化合物,更佳無鹼金屬氰化物。 In one embodiment where the gold ion source is an alkali metal gold cyanide compound, the complexing agent is preferably a cyanide-free compound, more preferably an alkali metal-free cyanide.
在一個實施例中,錯合劑在電鍍組合物中具有在1g/l至200g/l範圍內、較佳在1g/l至100g/l範圍內、更佳在10g/l至50g/l範圍內之濃度。 In one embodiment, the binder is present in the electroplating composition in the range of from 1 g/l to 200 g/l, preferably in the range of from 1 g/l to 100 g/l, more preferably in the range of from 10 g/l to 50 g/l. Concentration.
在一個實施例中,電鍍組合物可進一步包含至少一種合金化金屬離子源。合金化金屬離子之金屬係選自鈷、鎳及鐵。金-鈷、金-鎳及金-鐵合金屬於硬金合金。 In one embodiment, the electroplating composition can further comprise at least one source of alloyed metal ions. The metal of the alloyed metal ion is selected from the group consisting of cobalt, nickel and iron. Gold-cobalt, gold-nickel and gold-iron alloys are hard gold alloys.
硬金合金沉積物具有在99.00質量%至小於99.90質量%範圍內之金含量。對於硬金合金,合金金屬鈷、鎳及/或鐵之含量可在小於0.03質量%至大於0.3質量%範圍內(ASTM B488-11,第7部分)。合金金屬對為如用於高可靠性應用之電連接器之接觸材料之工業應用所需要的金合金賦予最高硬度及最高耐磨性(ASTM B488-11,附錄X1)。同時,硬金合金維持高電導率,該高電導率另外對於其在電連接器內之應用而言為重要的。對比而言,金含量等於或大於99.90質量%之金沉積物具有較低硬度(ASTM B488-11,第4部分及第7部分)、較低耐磨性且因此不適合應用於電連接器。 The hard gold alloy deposit has a gold content ranging from 99.00% by mass to less than 99.90% by mass. For hard gold alloys, the alloy metal cobalt, nickel and/or iron may be present in an amount ranging from less than 0.03 mass% to more than 0.3 mass% (ASTM B488-11, part 7). Alloy metal imparts the highest hardness and highest wear resistance to gold alloys required for industrial applications such as contact materials for electrical connectors for high reliability applications (ASTM B488-11, Appendix X1). At the same time, hard gold alloys maintain high electrical conductivity, which is otherwise important for their use in electrical connectors. In contrast, gold deposits having a gold content of equal to or greater than 99.90 mass% have lower hardness (ASTM B488-11, parts 4 and 7), lower wear resistance and are therefore unsuitable for use in electrical connectors.
合金化金屬離子係選自鈷(II)離子、鎳(II)離子、鐵(II)離子及鐵(III)離子。合金化金屬離子源係選自碳酸鈷、硫酸鈷、葡糖酸鈷、氰化鉀鈷、溴化鈷、氯化鈷、氯化鎳、溴化鎳、硫酸鎳、酒石酸鎳、磷酸鎳、硝酸鎳、胺基磺酸鎳、氯化鐵、溴化鐵、檸檬酸鐵、氟化鐵、碘化鐵、硝酸鐵、乙二酸鐵、磷酸鐵、焦磷酸鐵、硫酸鐵及乙酸鐵。 The alloying metal ions are selected from the group consisting of cobalt (II) ions, nickel (II) ions, iron (II) ions, and iron (III) ions. The alloying metal ion source is selected from the group consisting of cobalt carbonate, cobalt sulfate, cobalt gluconate, potassium cobalt cyanide, cobalt bromide, cobalt chloride, nickel chloride, nickel bromide, nickel sulfate, nickel tartrate, nickel phosphate, nitric acid. Nickel, nickel sulfonate, iron chloride, iron bromide, iron citrate, iron fluoride, iron iodide, iron nitrate, iron oxalate, iron phosphate, iron pyrophosphate, iron sulfate and iron acetate.
在一個實施例中,至少一種合金化金屬離子源在電鍍組合物中具有在0.001g/l至5g/l範圍內、較佳在0.05g/l至2g/l範圍內、更佳在 0.05g/l至1g/l範圍內之濃度。 In one embodiment, the at least one alloying metal ion source has a range of from 0.001 g/l to 5 g/l, preferably from 0.05 g/l to 2 g/l, more preferably in the electroplating composition. Concentrations ranging from 0.05 g/l to 1 g/l.
在一個實施例中,電鍍組合物可進一步包含用於合金化金屬離子之錯合劑。用於合金化金屬離子之錯合劑可選自亞硫酸及其鹽,諸如亞硫酸鉀、亞硫酸銨;羧酸,諸如山梨酸;羥基羧酸,諸如檸檬酸及丙二酸;胺基羧酸,諸如乙二胺四乙酸、亞胺二乙酸、氮基三乙酸、1,2-二胺基環己烷四乙酸、雙-2-胺基乙醚四乙酸、二伸乙三胺五乙酸;無機酸,諸如磷酸、硫酸、硼酸、硫代硫酸;膦酸,諸如1-羥基乙烷-1,1-二膦酸、1-羥基乙烷-1,2-二膦酸、胺基三亞甲基膦酸、乙二胺四甲基膦酸、六亞甲基二胺基四甲基膦酸;及前述酸之鹽,諸如鹼金屬鹽及鹼土金屬鹽;較佳鈉鹽及鉀鹽;胺,諸如四伸乙基五胺、三伸乙基四胺、三乙胺、二伸乙基三胺及乙二胺。錯合劑亦可充當導電鹽。 In one embodiment, the electroplating composition may further comprise a binder for alloying metal ions. The complexing agent for alloying metal ions may be selected from the group consisting of sulfurous acid and salts thereof, such as potassium sulfite, ammonium sulfite; carboxylic acids such as sorbic acid; hydroxycarboxylic acids such as citric acid and malonic acid; , such as ethylenediaminetetraacetic acid, imine diacetic acid, nitrogen triacetic acid, 1,2-diaminocyclohexanetetraacetic acid, bis-2-aminoethyl ether tetraacetic acid, diethylenetriamine pentaacetic acid; inorganic Acids such as phosphoric acid, sulfuric acid, boric acid, thiosulfuric acid; phosphonic acids such as 1-hydroxyethane-1,1-diphosphonic acid, 1-hydroxyethane-1,2-diphosphonic acid, aminotrimethylene a phosphonic acid, ethylenediaminetetramethylphosphonic acid, hexamethylenediaminetetramethylphosphonic acid; and a salt of the foregoing, such as an alkali metal salt and an alkaline earth metal salt; preferably a sodium salt and a potassium salt; an amine, Such as tetraethylamine, triethylamine, triethylamine, diethylamine and ethylenediamine. The wrong agent can also act as a conductive salt.
用於合金化金屬離子之錯合劑在電鍍組合物中可具有在1g/l至200g/l範圍內、較佳在20g/l至150g/l範圍內之濃度。若上述錯合劑用於金離子及合金化金屬離子,則錯合劑之濃度為金離子及合金化金屬離子所需濃度總和。 The binder for alloying metal ions may have a concentration in the electroplating composition in the range of from 1 g/l to 200 g/l, preferably from 20 g/l to 150 g/l. If the above-mentioned binder is used for gold ions and alloying metal ions, the concentration of the binder is the sum of the concentrations required for the gold ions and the alloyed metal ions.
在一個實施例中,電鍍組合物可進一步包含至少一種增白劑。該至少一種增白劑係選自吡啶及喹啉化合物。吡啶及喹啉化合物係選自經取代吡啶及經取代喹啉化合物。較佳地,經取代吡啶及經取代喹啉化合物係選自單羧酸或二羧酸、單磺酸或二磺酸、單硫醇或二硫醇取代之吡啶、喹啉、吡啶衍生物或喹啉衍生物。吡啶衍生物或喹啉衍生物可在一或多個位置藉由相同或不同取代基取代。更佳地,吡啶衍生物或喹啉衍生物係選自在吡啶環之3-位置中取代之衍生物。甚至更佳地,吡啶衍生物或喹啉衍生物係選自吡啶羧酸或喹啉羧酸、吡啶磺酸或喹啉磺酸及吡啶硫醇或喹啉硫醇。甚至更佳地,吡啶羧酸或喹啉羧酸係選自其各別酯類及醯胺類。甚至更佳地,吡啶羧酸或喹啉羧酸 係選自吡啶-3-甲酸(菸鹼酸)、喹啉-3-甲酸、4-吡啶甲酸、菸鹼酸甲酯、菸鹼醯胺、菸鹼酸二乙基醯胺、吡啶-2,3-二甲酸、吡啶-3,4-二甲酸及吡啶-4-硫代乙酸。甚至更佳地,吡啶磺酸或喹啉磺酸係選自3-吡啶磺酸、4-吡啶磺酸及2-吡啶磺酸。最佳地,至少一種增白劑係選自吡啶-3-甲酸(菸鹼酸)、菸鹼醯胺及3-吡啶磺酸。 In one embodiment, the electroplating composition can further comprise at least one whitening agent. The at least one whitening agent is selected from the group consisting of pyridine and quinoline compounds. The pyridine and quinoline compounds are selected from the group consisting of substituted pyridines and substituted quinoline compounds. Preferably, the substituted pyridine and the substituted quinoline compound are selected from the group consisting of a monocarboxylic acid or a dicarboxylic acid, a monosulfonic acid or a disulfonic acid, a monothiol or a dithiol substituted pyridine, a quinoline, a pyridine derivative or Quinoline derivative. The pyridine derivative or quinoline derivative may be substituted at one or more positions by the same or different substituents. More preferably, the pyridine derivative or the quinoline derivative is selected from the group consisting of a derivative substituted at the 3-position of the pyridine ring. Even more preferably, the pyridine derivative or the quinoline derivative is selected from the group consisting of pyridine carboxylic acid or quinoline carboxylic acid, pyridine sulfonic acid or quinoline sulfonic acid, and pyridine thiol or quinoline thiol. Even more preferably, the pyridine carboxylic acid or the quinoline carboxylic acid is selected from the group consisting of its respective esters and guanamines. Even more preferably, pyridine carboxylic acid or quinoline carboxylic acid Is selected from the group consisting of pyridine-3-carboxylic acid (nicotinic acid), quinoline-3-carboxylic acid, 4-picolinic acid, methyl nicotinic acid, nicotinamide, nicotinic acid diethylguanamine, pyridine-2, 3-dicarboxylic acid, pyridine-3,4-dicarboxylic acid and pyridine-4-thioacetic acid. Even more preferably, the pyridinesulfonic acid or quinoline sulfonic acid is selected from the group consisting of 3-pyridinesulfonic acid, 4-pyridinesulfonic acid and 2-pyridinesulfonic acid. Most preferably, the at least one whitening agent is selected from the group consisting of pyridine-3-carboxylic acid (nicotinic acid), nicotinamide, and 3-pyridine sulfonic acid.
至少一種增白劑在電鍍組合物中可具有在0.5g/l至10g/l範圍內、較佳在1g/l至10g/l範圍內之濃度。 The at least one whitening agent may have a concentration in the electroplating composition in the range of from 0.5 g/l to 10 g/l, preferably in the range of from 1 g/l to 10 g/l.
在2A/dm2至100A/dm2之間的寬電流密度範圍內,增白劑有利地引起明亮金層之沉積。 The brightener advantageously causes deposition of a bright gold layer over a wide current density range between 2 A/dm 2 and 100 A/dm 2 .
在一個實施例中,電鍍組合物可進一步包含至少一種酸。較佳地,至少一種酸為有機酸或無機酸。更佳地,至少一種酸係選自磷酸、檸檬酸、蘋果酸、乙二酸、甲酸及聚乙烯胺基乙酸。至少一種酸用以調節電鍍組合物之pH值。至少一種酸亦可充當錯合劑及/或充當導電鹽。 In one embodiment, the electroplating composition can further comprise at least one acid. Preferably, the at least one acid is an organic or inorganic acid. More preferably, the at least one acid is selected from the group consisting of phosphoric acid, citric acid, malic acid, oxalic acid, formic acid, and polyvinylaminoacetic acid. At least one acid is used to adjust the pH of the plating composition. The at least one acid can also act as a blocking agent and/or act as a conductive salt.
至少一種酸在電鍍組合物中可具有在1g/l至200g/l範圍內之濃度。 The at least one acid may have a concentration in the electroplating composition ranging from 1 g/l to 200 g/l.
在一個實施例中,電鍍組合物可進一步包含至少一種鹼性化合物。至少一種鹼性化合物用以調節電鍍組合物之pH值。至少一種鹼性化合物係選自氫氧化物、硫酸鹽、碳酸鹽、磷酸鹽、磷酸氫鹽及鈉、鉀及鎂之其他鹽。較佳地,至少一種鹼性化合物係選自KOH、NaOH、K2CO3、Na2CO3、K2HPO4、Na2HPO4、NaH2PO4及其混合物。 In one embodiment, the electroplating composition may further comprise at least one basic compound. At least one basic compound is used to adjust the pH of the plating composition. The at least one basic compound is selected from the group consisting of hydroxides, sulfates, carbonates, phosphates, hydrogen phosphates, and other salts of sodium, potassium, and magnesium. Preferably, the at least one basic compound is selected from the group consisting of KOH, NaOH, K 2 CO 3 , Na 2 CO 3 , K 2 HPO 4 , Na 2 HPO 4 , NaH 2 PO 4 and mixtures thereof.
在一個實施例中,電鍍組合物為酸性電鍍組合物。電鍍組合物可具有低於7、更佳低於5、甚至更佳在1至6之間、又甚至更佳在3至6之間、又甚至更佳在3.5至5.5之間、又甚至更佳在3.5至4.5之間的pH值。 In one embodiment, the electroplating composition is an acidic electroplating composition. The electroplating composition may have a ratio of less than 7, more preferably less than 5, even more preferably between 1 and 6, even more preferably between 3 and 6, even more preferably between 3.5 and 5.5, and even more Good pH between 3.5 and 4.5.
在自本發明之電鍍組合物沉積之金合金層為硬金層的一個實施例中,該電鍍組合物較佳為酸性電鍍組合物。若電沉積組合物為酸性的,則最可能電沉積具有高金含量之功能性或硬金合金層。 In one embodiment where the gold alloy layer deposited from the electroplating composition of the present invention is a hard gold layer, the electroplating composition is preferably an acidic electroplating composition. If the electrodeposition composition is acidic, it is most likely to electrodeposit a functional or hard gold alloy layer having a high gold content.
在一個實施例中,電鍍組合物可包含其他添加劑,諸如界面活性劑及/或晶粒細化劑。 In one embodiment, the electroplating composition can include other additives such as surfactants and/or grain refiners.
本發明進一步係關於一種包含以下步驟之方法:(i)提供如上文所定義之電鍍組合物;(ii)使基板與組合物接觸;及(iii)在基板與至少一個陽極之間施加電流且藉此將含金之層沉積於基板上。 The invention further relates to a method comprising the steps of: (i) providing an electroplating composition as defined above; (ii) contacting the substrate with the composition; and (iii) applying a current between the substrate and the at least one anode and Thereby, a gold-containing layer is deposited on the substrate.
該方法適合於將含金之層電沉積於基板上。該方法利用含有至少一種巰基三唑或其鹽作為防浸鍍添加劑之本發明之電鍍組合物。該方法顯著減少或幾乎抑制金浸鍍反應。因此本發明方法顯著減少金消耗且增加金或金合金電鍍組合物之壽命。含金之層可為純金層或金合金層,較佳為金合金層,更佳為硬金層。 The method is suitable for electrodepositing a gold-containing layer onto a substrate. The method utilizes an electroplating composition of the present invention containing at least one mercaptotriazole or a salt thereof as an anti-dip coating additive. This method significantly reduces or almost inhibits the gold immersion plating reaction. The process of the invention therefore significantly reduces gold consumption and increases the lifetime of the gold or gold alloy electroplating composition. The gold-containing layer may be a pure gold layer or a gold alloy layer, preferably a gold alloy layer, more preferably a hard gold layer.
含金之層可沉積於基板整個表面上或基板表面之部分上。將金屬層沉積於基板表面之部分上亦稱為選擇性沉積或鍍敷金屬層。因此,含金之層可選擇性電鍍於基板上。 The gold-containing layer can be deposited on the entire surface of the substrate or on a portion of the surface of the substrate. Depositing a metal layer on a portion of the surface of the substrate is also referred to as selectively depositing or plating a metal layer. Therefore, the gold-containing layer can be selectively plated on the substrate.
選擇性鍍敷可藉由如遮蔽法、點鍍敷法或刷鍍敷法之已知方法執行。遮蔽法涉及使用的遮罩覆蓋不要鍍敷之基板表面之部分。在點鍍敷法中,僅待金屬化之基板之部分經電性連接且因此經鍍敷。刷鍍敷法將毛刷覆蓋之陽極局部施加至毛刷含有金屬鍍敷溶液之待鍍敷之基板區域。 Selective plating can be performed by a known method such as a masking method, a spot plating method or a brush plating method. The masking method involves the use of a mask covering portions of the surface of the substrate that are not to be plated. In the spot plating method, only a portion of the substrate to be metallized is electrically connected and thus plated. The brush plating method locally applies the anode covered by the brush to the substrate area of the brush to be plated with the metal plating solution.
在金屬沉積於基板整個表面上或選擇性金屬沉積的兩種情況下,導電基板表面或基板表面之部分與本發明之電鍍組合物接觸。基板表面或基板表面之部分作為陰極經電性連接。在此陰極與至少一個 陽極之間施加電壓使得電流供應至基板表面或基板表面之部分。 In the case where the metal is deposited on the entire surface of the substrate or in selective metal deposition, the surface of the conductive substrate or a portion of the surface of the substrate is in contact with the electroplating composition of the present invention. A portion of the substrate surface or the surface of the substrate is electrically connected as a cathode. In this cathode with at least one A voltage is applied between the anodes such that current is supplied to the surface of the substrate or a portion of the surface of the substrate.
電流之電流密度可在0.05A/dm2至100A/dm2,較佳1A/dm2至50A/dm2、更佳1A/dm2至40A/dm2、甚至更佳5A/dm2至40A/dm2、又甚至更佳5A/dm2至20A/dm2之範圍內。在電沉積含金之層期間施加較高電流密度有利地增加沉積速率及因此電沉積方法之生產率。 The current density of the current may be from 0.05 A/dm 2 to 100 A/dm 2 , preferably from 1 A/dm 2 to 50 A/dm 2 , more preferably from 1 A/dm 2 to 40 A/dm 2 , even more preferably from 5 A/dm 2 to 40 A. /dm 2 , and even better 5A/dm 2 to 20A/dm 2 . Applying a higher current density during electrodeposition of the gold-containing layer advantageously increases the deposition rate and thus the productivity of the electrodeposition process.
可改變鍍敷時間。時間量視基板上之含金之層之所需厚度而定。含金之層之厚度在0.01μm至5μm、較佳0.05μm至3μm、更佳0.05μm至1.5μm之範圍內。 The plating time can be changed. The amount of time depends on the desired thickness of the gold-containing layer on the substrate. The thickness of the gold-containing layer is in the range of 0.01 μm to 5 μm, preferably 0.05 μm to 3 μm, more preferably 0.05 μm to 1.5 μm.
在鍍敷期間本發明之電鍍組合物可保持在40℃至70℃範圍內之溫度下。 The electroplating composition of the present invention can be maintained at a temperature ranging from 40 ° C to 70 ° C during plating.
在鍍敷期間可不移動本發明之電鍍組合物或可攪動本發明之電鍍組合物。可例如藉由水鍍敷槽之機械運動(如震動、液體之攪拌或連續抽汲)或固有地藉由超音波處理或藉由高溫或藉由氣體饋入(諸如用惰性氣體或簡單地用空氣淨化水鍍敷槽)來執行攪動。 The electroplating composition of the present invention may not be moved during plating or the electroplating composition of the present invention may be agitated. For example, by mechanical movement of the water bath (such as vibration, stirring of liquid or continuous pumping) or inherently by ultrasonic treatment or by high temperature or by gas feeding (such as with inert gas or simply Air purifying water plating tank) to perform agitation.
用於將含金之層電沉積於基板上之方法可進一步包含在使基板與本發明之電鍍組合物接觸之前的預處理步驟。預處理步驟為通常使用酸或含氟之酸活化基板表面。 The method for electrodepositing a gold-containing layer on a substrate may further comprise a pre-treatment step prior to contacting the substrate with the electroplating composition of the present invention. The pretreatment step is to activate the surface of the substrate, typically with an acid or a fluorine-containing acid.
用於將含金之層電沉積於基板上之方法可包含在使基板與本發明之電鍍組合物接觸之前的其他鍍敷步驟。在將金層或金合金層電沉積於基板上之前,其他鍍敷步驟將其他金屬層沉積於基板上。其他金屬層之金屬可選自鐵、鎳、鎳-磷合金、銅、鈀、銀、鈷及其合金,較佳鎳、鎳-磷合金及銅。用於以上所提及之金屬之鍍敷法為此項技術中已知。 The method for electrodepositing a gold-containing layer onto a substrate can include other plating steps prior to contacting the substrate with the electroplating composition of the present invention. Other plating steps deposit other metal layers on the substrate prior to electrodepositing the gold or gold alloy layer onto the substrate. The metal of the other metal layer may be selected from the group consisting of iron, nickel, nickel-phosphorus alloy, copper, palladium, silver, cobalt, and alloys thereof, preferably nickel, nickel-phosphorus alloy, and copper. Plating methods for the metals mentioned above are known in the art.
在一個實施例中,待用含金之層(亦即金層或金合金層)鍍敷之基板為導電材料。導電材料可為金屬。金屬可為可發生金浸鍍反應之任何金屬。金屬可選自鐵、鎳、鎳-磷合金、銅、鈀、銀、鈷及其合 金。較佳地,基板係由鐵或銅製成且覆蓋有鎳層。 In one embodiment, the substrate to be plated with a gold-containing layer (ie, a gold layer or a gold alloy layer) is a conductive material. The electrically conductive material can be a metal. The metal can be any metal that can undergo a gold immersion plating reaction. The metal may be selected from the group consisting of iron, nickel, nickel-phosphorus alloys, copper, palladium, silver, cobalt, and combinations thereof. gold. Preferably, the substrate is made of iron or copper and covered with a layer of nickel.
在一個實施例中,待用含金之層鍍敷之基板為電連接器。較佳地,基板為電連接器之接觸界面。更佳地,基板為插頭連接器。基板可為印刷電路板、電線或電子裝置之部分。 In one embodiment, the substrate to be plated with the gold-containing layer is an electrical connector. Preferably, the substrate is the contact interface of the electrical connector. More preferably, the substrate is a plug connector. The substrate can be part of a printed circuit board, wire or electronic device.
本發明進一步係關於一種包含以下步驟之方法:(i)提供經使用之金或金合金電鍍組合物;(ii)將如上文所定義之巰基三唑添加至經使用之金或金合金電鍍組合物,及(iii)使基板與該組合物接觸;及(iv)在基板與至少一個陽極之間施加電流且藉此將金或金合金沉積於基板上。 The invention further relates to a method comprising the steps of: (i) providing a gold or gold alloy plating composition for use; (ii) adding a mercaptotriazole as defined above to a gold or gold alloy plating combination used And (iii) contacting the substrate with the composition; and (iv) applying a current between the substrate and the at least one anode and thereby depositing gold or a gold alloy on the substrate.
該方法適合於再生經使用之金或金合金電鍍組合物。一方面,經使用之電鍍組合物可為老化的金或金合金電鍍組合物。老化電鍍組合物本文中意謂已用於電鍍之組合物,在電鍍中金浸鍍反應已達成防止適當金層或金合金層之有效操作及沉積之程度。用於評估老化程度之標準為藉由浸鍍反應之沉積速率。在新製成之金或金合金電鍍槽中,沉積速率在60℃下為約5nm/5min金屬。沉積速率隨著電鍍槽壽命的增加而增加。當沉積速率在60℃下達到80至100nm/5min金屬時,通常需要更換金或金合金電鍍槽。即使當沉積速率在60℃下達到20至40nm/5min金屬時,金或金合金電鍍槽可能不再適合於工業鍍敷應用,因為當時浸鍍反應已造成金之高損耗。對比而言,本發明方法顯著減少或幾近抑制老化的金或金合金電鍍組合物之金浸鍍反應。因此,本發明方法再生老化的金或金合金電鍍組合物且顯著增加金或金合金電鍍組合物之壽命。 The method is suitable for regenerating gold or gold alloy plating compositions that have been used. In one aspect, the electroplating composition used can be an aged gold or gold alloy electroplating composition. An aged electroplating composition is herein meant to be a composition that has been used in electroplating where the gold immersion plating reaction has achieved an extent to prevent efficient operation and deposition of a suitable gold or gold alloy layer. The criterion used to evaluate the degree of aging is the deposition rate by the immersion plating reaction. In a newly fabricated gold or gold alloy plating bath, the deposition rate is about 5 nm/5 min metal at 60 °C. The deposition rate increases as the life of the plating bath increases. When the deposition rate reaches 80 to 100 nm/5 min metal at 60 ° C, it is usually necessary to replace the gold or gold alloy plating bath. Even when the deposition rate reaches 20 to 40 nm/5 min of metal at 60 ° C, the gold or gold alloy plating bath may no longer be suitable for industrial plating applications because the immersion plating reaction at the time has caused a high loss of gold. In contrast, the process of the present invention significantly reduces or nearly inhibits the gold immersion plating reaction of aged gold or gold alloy plating compositions. Thus, the process of the invention regenerates aged gold or gold alloy plating compositions and significantly increases the life of the gold or gold alloy plating composition.
本發明進一步係關於一種包含以下步驟之方法:(i)提供老化的金或金合金電鍍組合物; (ii)將如上文所定義之巰基三唑添加至老化的金或金合金電鍍組合物中,及(iii)使基板與組合物接觸;及(iv)在基板與至少一個陽極之間施加電流且藉此將金或金合金沉積於基板上。 The invention further relates to a method comprising the steps of: (i) providing an aged gold or gold alloy electroplating composition; (ii) adding a mercaptotriazole as defined above to the aged gold or gold alloy electroplating composition, and (iii) contacting the substrate with the composition; and (iv) applying a current between the substrate and the at least one anode Thereby, gold or a gold alloy is deposited on the substrate.
金層之厚度可用此項技術中已知之x射線螢光(XRF)量測。XRF厚度量測利用自x射線激發的樣本(基板,沉積物)發出的特徵性螢光輻射。藉由評估強度且假定樣本之分層結構,可計算層厚度。 The thickness of the gold layer can be measured by x-ray fluorescence (XRF) as known in the art. XRF thickness measurements utilize characteristic fluorescent radiation emitted from x-ray excited samples (substrates, deposits). The layer thickness can be calculated by evaluating the intensity and assuming a layered structure of the sample.
另一方面,經使用之電鍍組合物可為還未在電鍍製程中使用一段時間的金或金合金電鍍組合物。未使用意謂金或金合金電鍍組合物不經電性連接且無金或金合金自組合物電沉積。觀測到儘管金或金合金電沉積組合物未在電鍍製程中使用,金浸鍍之問題亦會增加。將本發明之巰基三唑添加至暫時離開操作之金或金合金電沉積組合物中亦當組合物再次操作時顯著減少或幾乎抑制金浸鍍反應。 Alternatively, the electroplating composition used may be a gold or gold alloy electroplating composition that has not been used for a period of time in the electroplating process. Unused means that the gold or gold alloy plating composition is not electrically connected and no gold or gold alloy is electrodeposited from the composition. It has been observed that although gold or gold alloy electrodeposition compositions are not used in the electroplating process, the problem of gold immersion plating is also increased. The addition of the mercaptotriazole of the present invention to the gold or gold alloy electrodeposition composition temporarily removed from operation also significantly reduces or nearly inhibits the gold immersion plating reaction when the composition is operated again.
本發明進一步係關於一種包含以下步驟之方法:(i)提供暫時離開操作之金或金合金電鍍組合物;(ii)將如上文所定義之巰基三唑添加至暫時離開操作之金或金合金電鍍組合物,及(iii)使基板與組合物接觸;及(iv)在基板與至少一個陽極之間施加電流且藉此將金或金合金沉積於基板上。本發明進一步係關於一種用含金之層電鍍之基板,該基板可藉由本發明之一種方法獲得。 The invention further relates to a method comprising the steps of: (i) providing a gold or gold alloy plating composition for temporary leaving operation; (ii) adding a mercaptotriazole as defined above to a gold or gold alloy temporarily leaving operation An electroplating composition, and (iii) contacting the substrate with the composition; and (iv) applying a current between the substrate and the at least one anode and thereby depositing gold or a gold alloy on the substrate. The invention further relates to a substrate electroplated with a gold-containing layer obtainable by a method of the invention.
本發明進一步係關於本發明之巰基三唑作為電沉積組合物中、較佳用於含金之層之電沉積組合物中之防浸鍍添加劑之用途。 The invention further relates to the use of the mercaptotriazole of the invention as an anti-dip coating additive in an electrodeposition composition, preferably in an electrodeposition composition of a gold-containing layer.
本發明之電鍍組合物及方法顯著減少或幾乎抑制金浸鍍反應。因此,金不沉積於基板表面之不想要區域上。此節省成本,因為使金 之損耗及有缺陷最終產品之製備減至最少。此外,金或金合金電鍍組合物之壽命顯著提高。 The electroplating compositions and methods of the present invention significantly reduce or nearly inhibit the gold immersion plating reaction. Therefore, gold is not deposited on the undesired areas of the substrate surface. This saves money because of the gold The loss and defective end product preparation is minimized. In addition, the life of gold or gold alloy plating compositions is significantly improved.
相比於本發明之三唑化合物,四唑化合物在減少金浸鍍反應中不太顯著有效。另外,四唑化合物展示在金或金合金電鍍組合物中的較不穩定性,導致四唑化合物之較高消耗、歸因於在處理期間分解產物增加之濃度及因此金電解質之降低壽命的不正常工作。 The tetrazole compound is less effective in reducing the gold immersion plating reaction than the triazole compound of the present invention. In addition, the tetrazole compound exhibits less stability in the gold or gold alloy electroplating composition, resulting in higher consumption of the tetrazole compound, due to the increased concentration of decomposition products during processing, and thus the reduced life of the gold electrolyte. normal work.
將用鎳電鍍的銅板用作基板。藉由用水沖洗、藉由在室溫(約20℃)下氧化活化(UniClean 675,Atotech Deutschland GmbH之產品)15秒且再次用水且其後用去離子水沖洗來預處理基板。 A copper plate plated with nickel was used as the substrate. The substrate was pretreated by rinsing with water, oxidative activation (UniClean 675, product of Atotech Deutschland GmbH) at room temperature (about 20 ° C) for 15 seconds and again with water and thereafter with deionized water.
用新製成的另外含有500mg/l 5-巰基-1,2,3-三唑之鈉鹽作為防浸鍍添加劑之金-鈷合金鍍敷槽(Aurocor HSC,15g/l金,pH 4.5,Atotech Deutschland GmbH之產品)對銅板A進行電鍍。在10A/dm2電流密度、60℃溫度下在攪拌下執行電鍍歷時150秒之時間。 A gold-cobalt alloy plating bath (Aurocor HSC, 15 g/l gold, pH 4.5, additionally prepared with a sodium salt of 500 mg/l 5-mercapto-1,2,3-triazole as an anti-dip coating additive) Copper plate A is electroplated by Atotech Deutschland GmbH. Electroplating was carried out under stirring at a current density of 10 A/dm 2 at a temperature of 60 ° C for a period of 150 seconds.
鍍敷後,用厚度為5μm之高硬度的明亮、均一、良好黏著度之金-鈷合金層完全覆蓋基板。 After plating, the substrate was completely covered with a bright, uniform, good adhesion gold-cobalt alloy layer having a high hardness of 5 μm.
將如實例1中所描述之用鎳電鍍且經預處理之銅板用作基板。用德莎膠帶(tesa tapes)覆蓋基板之一半區域以便遮蔽不要鍍敷之區域。 A nickel plated with nickel and a pretreated copper plate as described in Example 1 was used as the substrate. One half of the substrate is covered with tesa tapes to shield areas that are not to be plated.
使銅板B與不含巰基三唑化合物之老化金-鈷合金鍍敷槽(Aurocor HSC,15g/l金,pH 4.5,Atotech Deutschland GmbH之產品)接觸。 Copper plate B was contacted with an aged gold-cobalt alloy plating tank (Aurocor HSC, 15 g/l gold, pH 4.5, product of Atotech Deutschland GmbH) containing no mercaptotriazole compound.
使銅板C至銅板F與含有如表1中所概述之500mg/l各自巰基三唑化合物或巰基四唑化合物之新製成的金-鈷合金鍍敷槽(Aurocor HSC,15g/l金,pH 4.5,Atotech Deutschland GmbH之產品)之個別部分接觸。 Copper plate C to copper plate F with a newly prepared gold-cobalt alloy plating bath containing 500 mg/l of each mercaptotriazole compound or mercaptotetrazole compound as outlined in Table 1 (Aurocor HSC, 15 g/l gold, pH 4.5, contact with individual parts of the product of Atotech Deutschland GmbH).
在與金-鈷合金鍍敷槽接觸的同時,銅板B不電性連接至銅板F。因此,藉由電鍍無金屬沉積為可能的。50ml含有各別巰基唑化合物之金-鈷合金鍍敷槽用於各面板。將金-鈷合金鍍敷槽保持在60℃溫度下且在400rpm(每分鐘轉數)下不斷地攪動。接觸各面板5分鐘。 The copper plate B is not electrically connected to the copper plate F while being in contact with the gold-cobalt alloy plating bath. Therefore, it is possible to perform metal-free deposition by electroplating. 50 ml of a gold-cobalt alloy plating bath containing each hydrazolazole compound was used for each panel. The gold-cobalt alloy plating bath was maintained at a temperature of 60 ° C and continuously agitated at 400 rpm (revolutions per minute). Touch each panel for 5 minutes.
使面板與各別金-鈷合金鍍敷槽接觸後,藉由浸鍍反應沉積之金合金層之厚度藉由XRF量測。結果彙總於表1中且展示於圖1中。 After the panel was brought into contact with the respective gold-cobalt alloy plating baths, the thickness of the gold alloy layer deposited by the immersion plating reaction was measured by XRF. The results are summarized in Table 1 and shown in Figure 1.
一般而言,金合金層沉積於未由膠帶覆蓋之基板面板之部分上,而無金合金沉積至用膠帶覆蓋之基板面板之部分。自含有根據本發明之巰基三唑之金合金槽,僅藉由浸鍍反應沉積具有最小厚度之金合金層。對比而言,自不含巰基唑化合物或比較巰基四唑化合物之金合金槽,藉由浸鍍反應沉積具有顯著較高層厚度之金合金層。此外,比較化合物D造成金合金槽中不想要的沈澱物。相比於本發明之三唑化合物,四唑化合物展示在金合金電解質中的較不穩定性,導致四唑化合物之較高消耗、歸因於在處理期間分解產物增加之濃度及因此金電解質之降低壽命的不正常工作。因此,本發明之巰基三唑化合物顯著減少或幾乎抑制金浸鍍反應。 In general, a gold alloy layer is deposited on portions of the substrate panel that are not covered by the tape, and no gold alloy is deposited onto portions of the substrate panel covered with tape. From the gold alloy bath containing the mercaptotriazole according to the present invention, the gold alloy layer having the smallest thickness is deposited only by the immersion plating reaction. In contrast, a gold alloy layer having a significantly higher layer thickness was deposited by a immersion plating reaction from a gold alloy bath containing no hydrazol compound or a decyltetrazole compound. In addition, Comparative Compound D caused unwanted deposits in the gold alloy bath. The tetrazole compound exhibits less instability in the gold alloy electrolyte than the triazole compound of the present invention, resulting in higher consumption of the tetrazole compound, due to increased concentration of decomposition products during processing, and thus gold electrolyte Not working properly to reduce life. Therefore, the mercaptotriazole compound of the present invention significantly reduces or almost inhibits the gold immersion plating reaction.
將如實例1中所描述之用鎳電鍍且經預處理之銅板用作基板。 A nickel plated with nickel and a pretreated copper plate as described in Example 1 was used as the substrate.
首先在60℃下將老化金-鈷合金電鍍槽(Aurocor HSC,Atotech Deutschland GmbH之產品)用活性碳處理30min。 First aging gold-cobalt alloy plating bath at 60 ° C (Aurocor HSC, Atotech Deutschland GmbH product) treated with activated carbon for 30 min.
在步驟1中,將金鍍敷槽保持在60℃下,而在不經電性連接之情況下將基板浸於金鍍敷槽中持續不同時間段。在槽中30秒後,無金沉積於基板上。但2分鐘後且3分鐘後,金層藉由浸鍍反應沉積於基板上。 In step 1, the gold plating bath is maintained at 60 ° C, and the substrate is immersed in the gold plating bath without electrical connection for different periods of time. After 30 seconds in the bath, no gold was deposited on the substrate. However, after 2 minutes and 3 minutes later, the gold layer was deposited on the substrate by a dip plating reaction.
在隨後的步驟2中,將25mg/l 5-巰基-1,2,3-三唑之鈉鹽添加至金鍍敷槽中,且在不經電性連接之情況下再次將基板浸於金鍍敷槽中持續不同時間段。與金鍍敷槽接觸30秒、2分鐘、3分鐘後,且甚至5分鐘後無金藉由浸鍍反應沉積於基板上。 In the subsequent step 2, 25 mg/l sodium salt of 5-mercapto-1,2,3-triazole was added to the gold plating bath, and the substrate was again immersed in gold without electrical connection. The plating bath continues for different time periods. After no contact with the gold plating bath for 30 seconds, 2 minutes, 3 minutes, and even 5 minutes, no gold was deposited on the substrate by the immersion plating reaction.
因此,本發明之巰基三唑化合物顯著減少或幾乎抑制老化的金或金合金電鍍組合物之金浸鍍反應。因此,本發明之巰基三唑化合物再生老化的金或金合金電鍍組合物且顯著增加金或金合金電鍍組合物之壽命。 Thus, the mercaptotriazole compounds of the present invention significantly reduce or nearly inhibit the gold immersion plating reaction of aged gold or gold alloy electroplating compositions. Thus, the mercaptotriazole compounds of the present invention regenerate aged gold or gold alloy electroplating compositions and significantly increase the lifetime of gold or gold alloy electroplating compositions.
在第1天,重複實例3,得到相同的結果。步驟2後,讓槽靜置一天而不用於鍍敷。 On day 1, Example 3 was repeated and the same results were obtained. After step 2, let the tank stand for one day without being used for plating.
在第2天,再次將基板與根據實例3之步驟1之金鍍敷槽接觸。在槽中3分鐘後,無金沉積於基板上。但在5分鐘後,金層藉由浸鍍反應沉積於基板上。 On the second day, the substrate was again brought into contact with the gold plating bath according to step 1 of Example 3. After 3 minutes in the bath, no gold was deposited on the substrate. However, after 5 minutes, the gold layer was deposited on the substrate by a dip plating reaction.
然後執行實例3之步驟2。甚至在與金鍍敷槽接觸5分鐘後,無金藉由浸鍍反應沉積於基板上。 Then perform step 2 of example 3. Even after 5 minutes of contact with the gold plating bath, no gold was deposited on the substrate by the immersion plating reaction.
因此,將本發明之巰基三唑化合物添加至暫時離開操作之金或金合金電沉積組合物亦當組合物再次操作時顯著減少或幾乎抑制金浸鍍反應。 Thus, the addition of the mercaptotriazole compound of the present invention to a gold or gold alloy electrodeposition composition that is temporarily removed from operation also significantly reduces or nearly inhibits the gold immersion plating reaction when the composition is operated again.
將用鎳電鍍的銅板用作基板。如下文表2中所彙總,銅板用鎳電 鍍且經預處理。在列於表2中之各製程步驟後,用水沖洗銅板。用德莎膠帶覆蓋基板之一半區域以便遮蔽不要鍍敷之區域。 A copper plate plated with nickel was used as the substrate. As summarized in Table 2 below, copper plates are made of nickel. Plated and pretreated. After each of the process steps listed in Table 2, the copper plate was rinsed with water. Cover one half of the substrate with Tessa tape to shield the areas that are not to be plated.
使銅板G與不含巰基三唑化合物之老化金-鈷合金鍍敷槽(Aurocor SC,4g/l金,pH 4.5,Atotech Deutschland GmbH之產品)接觸。 The copper plate G was brought into contact with an aged gold-cobalt alloy plating tank (Aurocor SC, 4 g/l gold, pH 4.5, product of Atotech Deutschland GmbH) containing no mercaptotriazole compound.
使銅板H至銅板M與含有如表3中所概述之50mg/l各自巰基三唑化合物之老化的金-鈷合金鍍敷槽(Aurocor SC,4g/l金,pH 4.5,Atotech Deutschland GmbH之產品)之個別部分接觸。 Copper plate H to copper plate M and aged gold-cobalt alloy plating bath containing 50 mg/l of each mercaptotriazole compound as outlined in Table 3 (Aurocor SC, 4 g/l gold, pH 4.5, product of Atotech Deutschland GmbH) ) Contact with individual parts.
在與金-鈷合金鍍敷槽接觸的同時,經鎳塗佈且預處理之銅板G至銅板M不經電性連接。因此,藉由電鍍無金屬沉積為可能的。將50ml含有各別巰基三唑化合物之金-鈷合金鍍敷槽用於各面板。將金-鈷合金鍍敷槽保持在60℃溫度下且在400rpm(每分鐘轉數)下不斷地攪動。接觸各面板5分鐘。 While being in contact with the gold-cobalt alloy plating bath, the nickel-coated and pretreated copper plate G to the copper plate M are not electrically connected. Therefore, it is possible to perform metal-free deposition by electroplating. 50 ml of a gold-cobalt alloy plating bath containing the respective mercaptotriazole compounds was used for each panel. The gold-cobalt alloy plating bath was maintained at a temperature of 60 ° C and continuously agitated at 400 rpm (revolutions per minute). Touch each panel for 5 minutes.
使面板與各別金-鈷合金鍍敷槽接觸後,藉由浸鍍反應沉積之金合金層之厚度藉由XRF量測。結果彙總於表3中且展示於圖2中。 After the panel was brought into contact with the respective gold-cobalt alloy plating baths, the thickness of the gold alloy layer deposited by the immersion plating reaction was measured by XRF. The results are summarized in Table 3 and shown in Figure 2.
*Atotech Deutschland GmbH之產品;RT=室溫(約20℃);MA=機械攪動;「---」=不施加條件 * Product of Atotech Deutschland GmbH; RT = room temperature (about 20 ° C); MA = mechanical agitation; "---" = no application conditions
自不含巰基三唑化合物之鍍敷槽沉積之金-鈷層(面板G)之厚度小於實例2中(面板B)之厚度,因為實例5中之鍍敷槽之金濃度顯著小於實例2中之金濃度。自含有5-巰基-1,2,3-三唑之鍍敷槽沉積之金-鈷層(面板H)之厚度大於實例2中(面板C)之厚度,因為實例5中之鍍敷槽內的5-巰基-1,2,3-三唑之濃度顯著小於實例2中之濃度。 The thickness of the gold-cobalt layer (panel G) deposited from the plating bath containing no mercaptotriazole compound is less than the thickness of panel 2 (panel B) because the gold concentration of the plating bath in example 5 is significantly less than in example 2 The gold concentration. The thickness of the gold-cobalt layer (panel H) deposited from the plating bath containing 5-mercapto-1,2,3-triazole is greater than the thickness of panel 2 (panel C) because of the plating bath in Example 5. The concentration of 5-mercapto-1,2,3-triazole was significantly less than the concentration in Example 2.
一般而言,金合金層沉積於不由膠帶覆蓋之基板面板之部分上,而無金合金沉積至用膠帶覆蓋之基板面板之部分。自含有根據本發明之巰基三唑之金合金槽,具有較小厚度之金合金層藉由浸鍍反應沉積。對比而言,自不含巰基三唑化合物或比較之胺基修飾巰基三唑化合物之金合金槽,具有顯著較高層厚度之金合金層藉由浸鍍反應沉積。因此,本發明之巰基三唑化合物顯著減少金浸鍍反應。 In general, a gold alloy layer is deposited on portions of the substrate panel that are not covered by the tape, and no gold alloy is deposited onto portions of the substrate panel covered with tape. From the gold alloy bath containing the mercaptotriazole according to the present invention, the gold alloy layer having a small thickness is deposited by the immersion plating reaction. In contrast, a gold alloy layer having a significantly higher layer thickness was deposited by a immersion plating reaction from a gold alloy bath containing no mercaptotriazole compound or a comparative amine-modified mercaptotriazole compound. Therefore, the mercaptotriazole compound of the present invention significantly reduces the gold immersion plating reaction.
巰基三唑化合物對沉積金層之沉積速率、硬度及黏著度的影響 Effect of Mercaptotriazole Compounds on Deposition Rate, Hardness and Adhesion of Deposited Gold Layer
將如實例1中所描述之用鎳電鍍且經預處理之銅板用作基板。 A nickel plated with nickel and a pretreated copper plate as described in Example 1 was used as the substrate.
首先,對如實例5中所描述之老化的金-鈷合金鍍敷槽(Aurocor HSC,15g/l金,pH 4.5,Atotech Deutschland GmbH之產品)之浸鍍反應進行量測。 First, the immersion plating reaction of the aged gold-cobalt alloy plating tank (Aurocor HSC, 15 g/l gold, pH 4.5, product of Atotech Deutschland GmbH) as described in Example 5 was measured.
藉由浸鍍反應自不含巰基三唑化合物之鍍敷槽之一部分鍍敷銅板N。藉由浸鍍反應自含有25mg/l 5-巰基-1,2,3-三唑之鈉鹽之鍍敷槽之一部分鍍敷銅板P。藉由浸鍍反應沉積於面板N上之金-鈷合金層具有82±6nm之厚度,且沉積於面板P上之金-鈷合金層具有10±4nm之厚度。 The copper plate N is partially plated from one of the plating tanks containing no mercaptotriazole compound by a dip plating reaction. The copper plate P was partially plated by a immersion plating reaction from one of the plating tanks containing the sodium salt of 25 mg/l of 5-mercapto-1,2,3-triazole. The gold-cobalt alloy layer deposited on the face plate N by the immersion plating reaction has a thickness of 82 ± 6 nm, and the gold-cobalt alloy layer deposited on the face plate P has a thickness of 10 ± 4 nm.
然後同一老化金-鈷合金鍍敷槽用於將金-鈷合金層電沉積於面板 上,除非在隨後的段落中另行說明。量測沉積之合金層的沉積速率、硬度及黏著度。如實例1中所描述執行電沉積。 The same aged gold-cobalt alloy plating bath is then used to electrodeposit the gold-cobalt alloy layer to the panel. Above, unless otherwise stated in the subsequent paragraphs. The deposition rate, hardness and adhesion of the deposited alloy layer were measured. Electrodeposition was performed as described in Example 1.
自不含巰基三唑化合物之老化鍍敷槽中之個別部分鍍敷銅板Q1至銅板Q4。自含有25mg/l 5-巰基-1,2,3-三唑之鈉鹽的老化鍍敷槽中之個別部分鍍敷銅板R1至銅板R4。如表4中所概述,電流密度自5A/dm2變化至20A/dm2。藉由XRF量測經電沉積之金-鈷合金層之厚度。結果彙總於表4中。 The copper plate Q1 to the copper plate Q4 are plated from individual portions of the aged plating bath containing no mercaptotriazole compound. The copper plate R1 to the copper plate R4 were plated from individual portions of the aged plating bath containing the sodium salt of 25 mg/l 5-mercapto-1,2,3-triazole. As outlined in Table 4, the current density varied from 5 A/dm 2 to 20 A/dm 2 . The thickness of the electrodeposited gold-cobalt alloy layer was measured by XRF. The results are summarized in Table 4.
在不存在或存在巰基三唑的情況下,來自老化鍍敷槽之金-鈷合金之沉積速率幾乎相同。因此,在金電沉積槽內存在根據本發明之巰基三唑確實不影響沉積速率。 In the absence or presence of mercaptotriazole, the deposition rate of the gold-cobalt alloy from the aged plating bath is almost the same. Therefore, the mercaptotriazole according to the present invention does not affect the deposition rate in the gold electrodeposition tank.
自不含巰基三唑化合物之老化鍍敷槽之一部分鍍敷銅板S。自含有25mg/l 5-巰基-1,2,3-三唑之鈉鹽的老化鍍敷槽之一部分鍍敷銅板T。在15A/dm2電流密度下執行電鍍150秒以獲得約5μm厚度之金-鈷合金層。使用XRF-SDD(X射線螢光-矽偏移偵測器)儀、來自Fischer Technology,Inc.之型號Fischerscope X-RAY XDRL藉由維氏(Vickers)硬度測試來測定金-鈷合金層之硬度。電沉積於面板S上之金-鈷合金層具有180±10 HV 0.001之硬度,且電沉積於面板T上之金-鈷合金層具有178±10 HV 0.001之硬度。 A copper plate S is partially plated from one of the aged plating tanks containing no mercaptotriazole compound. A copper plate T was partially plated from one of the aged plating baths containing sodium salt of 25 mg/l 5-mercapto-1,2,3-triazole. Electroplating was performed at a current density of 15 A/dm 2 for 150 seconds to obtain a gold-cobalt alloy layer having a thickness of about 5 μm. The hardness of the gold-cobalt alloy layer was determined by Vickers hardness test using an XRF-SDD (X-ray fluorescence-twist detector), Fischerscope X-RAY XDRL from Fischer Technology, Inc. . The gold-cobalt alloy layer electrodeposited on the face plate S has a hardness of 180 ± 10 HV 0.001, and the gold-cobalt alloy layer electrodeposited on the face plate T has a hardness of 178 ± 10 HV 0.001.
在不存在或存在巰基三唑情況下,自老化鍍敷槽沉積之金-鈷合金層之硬度幾乎相同。因此,在金電沉積槽內存在根據本發明之巰基 三唑確實不影響經沉積含金之層的硬度。 In the absence or presence of mercaptotriazole, the hardness of the gold-cobalt alloy layer deposited from the aged plating bath is almost the same. Therefore, there is a ruthenium base according to the present invention in the gold electrodeposition tank The triazole does not affect the hardness of the deposited gold-containing layer.
新製成的金-鈷合金鍍敷槽(Aurocor HSC,15g/l金,pH 4.5,Atotech Deutschland GmbH之產品)用於測定黏著度。當使用新近製成的金或金合金鍍敷槽進行沉積時,對經電沉積含金之層之黏著度的負面影響可最好地偵測,因為此等鍍敷槽僅具有低浸鍍反應且沉積物通常具有良好黏著度。 A newly prepared gold-cobalt alloy plating tank (Aurocor HSC, 15 g/l gold, pH 4.5, product of Atotech Deutschland GmbH) was used to determine the adhesion. When depositing using a newly formed gold or gold alloy plating bath, the negative effect on the adhesion of the electrodeposited gold-containing layer is best detected because these plating baths only have a low immersion plating reaction. And the deposits usually have good adhesion.
自不含巰基三唑化合物之新製成鍍敷槽之個別部分鍍敷銅板U1至銅板U2。自含有50mg/l 5-巰基-1,2,3-三唑之鈉鹽的新製成鍍敷槽之個別部分鍍敷銅板V1至銅板V2。 The copper plate U1 to the copper plate U2 are plated from the individual portions of the newly formed plating tank containing no mercaptotriazole compound. The copper plate V1 to the copper plate V2 were plated from the individual portions of the newly formed plating bath containing the sodium salt of 50 mg/l 5-mercapto-1,2,3-triazole.
在不經電性連接的情況下,首先使銅板U1及銅板V1與各別鍍敷槽接觸5分鐘。因此,對於面板V1,允許巰基三唑黏著至面板之鎳表面。然後,將銅板U1及銅板V1在5A/dm2下自各別鍍敷槽電鍍72秒,藉此將金-鈷合金層電沉積於面板上。藉由彎曲測試且藉由膠帶測試測定金-鈷合金層對面板表面之黏著度。按以下執行彎曲測試:將待測試之面板之部分彎曲成90°角度一次。當無氣泡形成於經沉積金層內或無經沉積金層之薄片自彎曲區域釋放時,認為黏著度良好。對於膠帶測試,將具有約6N/cm黏著強度之德莎膠帶4102黏著至金-鈷鍍敷面板,且然後自面板表面移除。若膠帶確實不移除金-鈷層之一部分或全部,則黏著度至少如認為良好黏著度之6N/cm一樣良好。對比而言,若膠帶移除金-鈷層之一部分或整體,則黏著度不足。 In the case of no electrical connection, the copper plate U1 and the copper plate V1 are first brought into contact with the respective plating grooves for 5 minutes. Thus, for panel V1, mercaptotriazole is allowed to adhere to the nickel surface of the panel. Then, the copper plate U1 and the copper plate V1 were plated from the respective plating tanks at 5 A/dm 2 for 72 seconds, whereby the gold-cobalt alloy layer was electrodeposited on the panel. The adhesion of the gold-cobalt alloy layer to the panel surface was determined by a bend test and by a tape test. Perform the bending test as follows: bend the portion of the panel to be tested to a 90° angle once. When the bubbles are formed in the deposited gold layer or the undeposited gold layer is released from the curved region, the adhesion is considered to be good. For the tape test, a Tessa tape 4102 having an adhesion strength of about 6 N/cm was adhered to the gold-cobalt plated panel and then removed from the panel surface. If the tape does not remove part or all of the gold-cobalt layer, the adhesion is at least as good as 6 N/cm which is considered to be good adhesion. In contrast, if the tape removes a part or the whole of the gold-cobalt layer, the adhesion is insufficient.
彎曲測試以及膠帶測試揭示金-鈷合金層至面板U1及面板V1之鎳表面的黏著度幾乎相同且良好。 The bending test and the tape test revealed that the adhesion of the gold-cobalt alloy layer to the nickel surface of the panel U1 and the panel V1 was almost the same and good.
首先使銅板U2及銅板V2與各別鍍敷槽接觸且電沉積厚度在0.1μm至0.2μm之間的薄金-鈷層(第一金-鈷層)。然後,在不經電性連接之情況下,使經鍍敷銅板與各別鍍敷槽接觸10秒。因此,對於面板 V2,允許巰基三唑黏著至所沉積之金-鈷層之表面。接著,在5A/dm2下自各別鍍敷槽電鍍銅板U2及銅板V2 72秒,藉此將第二金-鈷合金層電沉積於面板上。如上所描述藉由彎曲測試且藉由膠帶測試測定第二金-鈷合金層對第一金鈷層表面之黏著度。 First, the copper plate U2 and the copper plate V2 are brought into contact with the respective plating grooves and a thin gold-cobalt layer (first gold-cobalt layer) having a thickness of between 0.1 μm and 0.2 μm is electrodeposited. Then, the plated copper plate was brought into contact with the respective plating grooves for 10 seconds without being electrically connected. Thus, for panel V2, mercaptotriazole is allowed to adhere to the surface of the deposited gold-cobalt layer. Next, the copper plate U2 and the copper plate V2 were plated from the respective plating tanks at 5 A/dm 2 for 72 seconds, whereby the second gold-cobalt alloy layer was electrodeposited on the panel. The adhesion of the second gold-cobalt alloy layer to the surface of the first gold cobalt layer was determined by a bending test and by a tape test as described above.
彎曲測試以及膠帶測試揭示第二金-鈷合金層至面板U2及面板V2之第一金-鈷層表面之黏著度幾乎相同且良好。 The bending test and the tape test revealed that the adhesion of the second gold-cobalt alloy layer to the surface of the first gold-cobalt layer of the panel U2 and the panel V2 was almost the same and good.
在不存在或存在巰基三唑的情況下,自新製成的鍍敷槽沉積之金-鈷合金層之黏著度幾乎相同。因此,在金電沉積槽內存在根據本發明之巰基三唑確實不影響經沉積含金之層之黏著度。 In the absence or presence of mercaptotriazole, the adhesion of the gold-cobalt alloy layer deposited from the newly formed plating bath is almost the same. Therefore, the presence of the mercaptotriazole according to the present invention in the gold electrodeposition tank does not affect the adhesion of the deposited gold-containing layer.
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| US11674235B2 (en) * | 2018-04-11 | 2023-06-13 | Hutchinson Technology Incorporated | Plating method to reduce or eliminate voids in solder applied without flux |
| CN108998817B (en) * | 2018-07-06 | 2021-04-16 | 鹤山市精工制版有限公司 | Additive for priming nickel plating solution and application thereof |
| CN108754554B (en) * | 2018-09-18 | 2019-10-22 | 泉州益丰贵金属科技有限公司 | A kind of gold plating liquid and a kind of gold plating method |
| EP4370732A1 (en) | 2021-07-15 | 2024-05-22 | Seolfor Aktiebolag | Electroplating compositions and methods for preparing the same |
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Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8334226D0 (en) * | 1983-12-22 | 1984-02-01 | Learonal Uk Ltd | Electrodeposition of gold alloys |
| GB8612361D0 (en) * | 1986-05-21 | 1986-06-25 | Engelhard Corp | Gold electroplating bath |
| JP2005338779A (en) * | 2004-04-28 | 2005-12-08 | Fuji Photo Film Co Ltd | Black and white heat developable photosensitive material and image forming method |
| JP4129363B2 (en) * | 2002-03-15 | 2008-08-06 | エヌ・イーケムキャット株式会社 | Electrolytic gold plating solution and gold plating method |
| JP2004176171A (en) * | 2002-09-30 | 2004-06-24 | Shinko Electric Ind Co Ltd | Non-cyanide electrolytic gold plating solution |
| JP4868123B2 (en) * | 2005-02-04 | 2012-02-01 | 学校法人早稲田大学 | Gold-nickel amorphous alloy plating film, electroplating solution and electroplating method |
| SG127854A1 (en) * | 2005-06-02 | 2006-12-29 | Rohm & Haas Elect Mat | Improved gold electrolytes |
| JP4868121B2 (en) * | 2005-12-21 | 2012-02-01 | 学校法人早稲田大学 | Electroplating solution and method for forming amorphous gold-nickel alloy plating film |
| JP5317433B2 (en) * | 2007-06-06 | 2013-10-16 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Acid gold alloy plating solution |
| JP4719822B2 (en) * | 2008-06-11 | 2011-07-06 | 日本高純度化学株式会社 | Electrolytic gold plating solution and gold film obtained using the same |
| JP2011021217A (en) * | 2009-07-14 | 2011-02-03 | Ne Chemcat Corp | Electrolytic hard-gold-plating liquid and plating method using the same |
| US8608931B2 (en) * | 2009-09-25 | 2013-12-17 | Rohm And Haas Electronic Materials Llc | Anti-displacement hard gold compositions |
| ITFI20120103A1 (en) * | 2012-06-01 | 2013-12-02 | Bluclad Srl | GALVANIC BATHROOMS FOR THE ACHIEVEMENT OF A LEAGUE OF LOW-CARATHED GOLD AND GALVANIC PROCESS THAT USES THESE BATHROOMS. |
| US20140170407A1 (en) * | 2012-12-13 | 2014-06-19 | Carestream Health, Inc. | Anticorrosion agents for transparent conductive film |
-
2014
- 2014-08-25 EP EP14182083.7A patent/EP2990507A1/en not_active Withdrawn
-
2015
- 2015-08-21 CN CN201580044927.8A patent/CN106661751B/en active Active
- 2015-08-21 US US15/327,389 patent/US20170159195A1/en not_active Abandoned
- 2015-08-21 WO PCT/EP2015/069234 patent/WO2016030290A1/en not_active Ceased
- 2015-08-21 SG SG11201700461VA patent/SG11201700461VA/en unknown
- 2015-08-21 KR KR1020177004453A patent/KR102315943B1/en active Active
- 2015-08-21 EP EP15753055.1A patent/EP3186413B1/en active Active
- 2015-08-21 JP JP2017511313A patent/JP6726173B2/en active Active
- 2015-08-25 TW TW104127802A patent/TWI669296B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3186413B1 (en) | 2019-02-06 |
| EP2990507A1 (en) | 2016-03-02 |
| EP3186413A1 (en) | 2017-07-05 |
| KR102315943B1 (en) | 2021-10-21 |
| TWI669296B (en) | 2019-08-21 |
| CN106661751A (en) | 2017-05-10 |
| WO2016030290A1 (en) | 2016-03-03 |
| US20170159195A1 (en) | 2017-06-08 |
| CN106661751B (en) | 2019-11-12 |
| SG11201700461VA (en) | 2017-03-30 |
| KR20170046651A (en) | 2017-05-02 |
| JP2017527700A (en) | 2017-09-21 |
| JP6726173B2 (en) | 2020-07-22 |
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