TW201603951A - Cleaning liquid supply device, cleaning liquid supply method, and cleaning unit - Google Patents

Abstract

The present invention provides a cleaning chemical supply device, a cleaning chemical supply method, and a cleaning unit that can flexibly adjust the dilution ratio and can increase the size of the device. The cleaning chemical supply device includes: first in-line mixing The device (72) for supplying the first cleaning chemical to the cleaning device (200), and the second in-line mixer (73) for supplying the second cleaning liquid to the substrate cleaning device (200); The chemical liquid CLC tank (120) for controlling the flow rate of the first chemical liquid supplied to the first in-line mixer (72); and the second chemical liquid CLC tank (130) for supplying the second indirect column The flow rate of the second chemical liquid of the mixer (73) is controlled; and the DIWCLC tank (110) is used for the dilution water supplied to the first in-line mixer (72) or the second in-line mixer (73) The flow rate is controlled, and the cleaning chemical supply device is configured to switch the supply destination of the dilution water from the first in-line mixer (72) to the second in-line mixer (73), or from the second in-line mixing. The switch (73) switches to the first inline mixer (72).

Description

Cleaning liquid supply device, cleaning liquid supply method, and cleaning unit

The present invention relates to a cleaning chemical supply device, a cleaning chemical supply method, and a cleaning unit.

A CMP (Chemical Mechanical Polishing) device includes: a polishing device for polishing a surface of a semiconductor substrate on which a semiconductor wafer is formed; and a cleaning device for supplying a cleaning solution to The polished semiconductor substrate of the polishing apparatus is cleaned. The cleaning device mixes water such as DIW (De-Ionized Water) into a chemical solution to prepare a cleaning solution (diluted drug solution), and cleans the semiconductor substrate with a cleaning solution (for example, reference) Patent Document 1).

In a cleaning device using a cleaning chemical, a cleaning chemical supply device having an in-line type flow meter in which a flow meter of a chemical liquid and a flow meter of a DIW are arranged in a pair is conventionally used. These chemical flow meters and DIW flow meters include CLC (Closed Loop Controller), which feedback control the respective flow rates so that the chemical flow rate and the DIW flow rate become a certain ratio. Thereby, the chemical liquid diluted by a certain ratio is supplied to the washing tank of a washing apparatus.

In the conventional chemical solution supply device, a flow meter in which a chemical liquid is accommodated in one case, a flow meter of DIW, and an in-line stirrer in which a chemical liquid whose flow rate is controlled and DIW are mixed are used. That is, a DIW flow meter is designed to be combined with a liquid flow meter, the size of a box Designed to accommodate only the size of two flow meters.

In recent years, in a cleaning device provided in a CMP apparatus, such a process is required to alternately use an acidic chemical solution and an alkaline chemical solution to clean the semiconductor substrate. As described above, since the case of the conventional cleaning device is provided to accommodate only two flow meters, it is possible to accommodate only two kinds of chemical liquid flow meters in the case, and it is possible to increase the flow rate of the DIW in the case. meter. Therefore, in the conventional chemical liquid supply device, two flow meters for the chemical liquid are placed in the tank, and the two kinds of cleaning chemical liquids that have been diluted in advance are supplied by the respective flow meters.

However, in the chemical supply device using the two kinds of cleaning liquids which are diluted in advance, when the dilution ratio of the cleaning liquid is changed as the process recipe changes, it is necessary to prepare cleaning drugs of different dilution ratios. liquid. That is, the chemical supply device cannot flexibly respond to changes in process parameters.

On the other hand, if the above-described in-line type flowmeter is used, it is possible to change the dilution ratio in accordance with the change of the process parameter as long as the flow rate setting value of the flow meter of the chemical liquid and the flow meter of the DIW is changed. However, in order to supply the two chemical solutions to the cleaning device, two in-line flow meters must be prepared. In this case, since the flowmeter of the DIW is provided for each of the two in-line flowmeters, there is a problem that the chemical solution supply device is increased in size.

However, as a flow meter for a chemical liquid and a flow meter for a DIW, a differential pressure flow meter (orifice flow meter) is generally used. The differential pressure type flowmeter is configured such that an orifice is disposed in a path through a fluid, and a volume flow rate (flow velocity) of the fluid is measured based on the differential pressure. The measurement range of the differential pressure flow meter, that is, the flow range that can be controlled by the CLC, is structurally determined by the diameter of the orifice. That is, the measurement range of the orifice flowmeter is generally such that the maximum minimum flow ratio is 1:9 to be, for example, 30 ml/min to 300 ml/min. Therefore, it can be controlled by the flow meter of the liquid medicine and the flow meter of the DIW. The flow range is structurally predetermined.

In the conventional cleaning chemical supply device, when the dilution ratio of the cleaning chemical liquid or the supply flow rate of the cleaning chemical liquid is changed by the change of the process parameter, there is a case where the flow rate of the required chemical liquid and DIW does not fall. The flow range that can be controlled by the currently selected medical flow meter and DIW flow meter. In this case, the process parameters are changed by reselecting the chemical flow meter and the DIW flow meter and replacing them with a flow meter of a controllable flow rate range. Therefore, in the case where the flow rate of the chemical liquid and the DIW required in the changed process parameters does not fall within the flow range of the liquid flow meter and the DIW flow meter, the chemical flow meter must be replaced each time the process parameters are changed. And DIW flowmeter, it took a lot of work.

In the cleaning device of the CMP apparatus, the cleaning liquid is used not only for the cleaning of the substrate but also for the substrate waiting for cleaning (the substrate to be cleaned next) for preventing oxidation of the substrate. In the conventional cleaning process of the CMP apparatus, the waiting for cleaning and cleaning of the substrate is not performed at the same time. That is, during the cleaning of the substrate, the substrate is not transported to the waiting place. However, in recent years, in order to increase the throughput of processing, it is required to simultaneously perform processing for cleaning and cleaning of the substrate. In the case where the cleaning and cleaning of the substrate are simultaneously performed, since the cleaning chemical liquid is used separately, a chemical liquid and DIW having a larger flow rate than in the related art are required. In addition, it is also required to handle the supply of small amounts of liquid medicine and DIW. Further, in the flow rate range that can be controlled by the flow meter of the conventional chemical liquid and the flow meter of the DIW, various processes cannot be performed.

Patent Document 1: Japanese Laid-Open Patent Publication No. 2009-54959

The present invention has been made to solve at least one of the above problems, and an object thereof is to provide a cleaning chemical liquid supply device and a cleaning chemical liquid supply method, which can be flexibly The dilution ratio should be changed, and the size of the device can be suppressed from increasing.

One of the other objects of the present invention is to supply a chemical solution and a DIW over a wide flow range without changing the flow meter.

According to an aspect of the present invention, a cleaning chemical supply device is provided. The cleaning chemical supply device supplies the cleaning chemical solution to the substrate cleaning device, and the cleaning chemical supply device includes a first mixing portion for mixing the first chemical liquid and the dilution water. The obtained first cleaning chemical solution is supplied to the substrate cleaning device, and the second mixing portion is configured to supply the second cleaning chemical liquid obtained by mixing the second chemical liquid and the dilution water to the a first chemical solution control unit for controlling a flow rate of the first chemical liquid supplied to the first mixing unit, and a second chemical liquid control unit, the first chemical liquid control unit (2) The chemical solution control unit is configured to control a flow rate of the second chemical liquid supplied to the second mixing unit, and a dilution water control unit configured to supply the first mixing unit or The flow rate of the dilution water in the second mixing unit is controlled, and a dilution water supply switching unit that switches the supply destination of the dilution water from the first mixing unit to the first 2 mixing unit or switching from the second mixing unit to the first mixing unit.

According to an aspect of the present invention, in the cleaning chemical supply device, the first chemical liquid control unit is configured to stop supplying the second cleaning chemical solution to the substrate cleaning device. In the first chemical liquid, the second chemical liquid control unit is configured to stop supplying the second chemical liquid while the first cleaning chemical liquid is supplied to the substrate cleaning device.

According to another aspect of the present invention, in the cleaning chemical supply device, the dilution water supply switching unit is configured to supply the first chemical liquid to the first chemical solution in the first chemical liquid control unit During the mixing portion, the dilution water is supplied to the first mixing unit, and the second liquid control is performed. When the second chemical liquid is supplied to the second mixing unit, the dilution water is supplied to the second mixing unit.

According to another aspect of the present invention, the cleaning chemical supply device includes: a first chemical liquid supply source that supplies the first chemical liquid to the first chemical liquid control unit; and a second drug a liquid supply source, the second chemical liquid supply source supplies the second chemical liquid to the second chemical liquid control unit; and a first chemical liquid inlet valve, wherein the first chemical liquid inlet valve is connected to the first chemical liquid a supply source and a conduit of the first chemical solution control unit; and a second chemical liquid inlet valve, wherein the second chemical liquid inlet valve is connected to the second chemical liquid supply source and the second chemical liquid control unit On the pipeline.

According to another aspect of the invention, in the cleaning chemical supply device, one of the first chemical liquid and the second chemical liquid is an alkaline chemical liquid, and the other is an acidic chemical liquid.

According to another aspect of the present invention, a cleaning chemical supply method is provided. The cleaning chemical supply method is for supplying a cleaning chemical solution to a substrate cleaning device, the cleaning chemical supply method having the following steps: a step of controlling a flow rate of the first chemical liquid; and a step of controlling a flow rate of the dilution water; a step of supplying the first chemical solution and the dilution water to the first mixing unit and mixing the first chemical liquid and the dilution water; and a first supply step of the first supply step a first cleaning chemical solution obtained by mixing the dilution water and the first chemical liquid is supplied to the substrate cleaning device; a step of controlling a flow rate of the second chemical liquid; and a supply destination of the dilution water is supplied a step of switching the first mixing unit to the second mixing unit; supplying the second chemical liquid and the dilution water to the second mixing unit, and mixing the second chemical liquid and the dilution water And a second supply step of supplying the second cleaning chemical liquid obtained by mixing the dilution water to the substrate cleaning device.

According to another aspect of the present invention, in the cleaning chemical supply method, the The first supply step has a step of stopping the supply of the first cleaning chemical liquid during the supply of the second cleaning chemical solution to the substrate cleaning device in the second supply step, and the second supply step has In the first supply step, the supply of the second cleaning chemical liquid is stopped while the first cleaning chemical liquid is supplied to the cleaning device.

According to another aspect of the present invention, in the chemical solution supply method, one of the first chemical liquid and the second chemical liquid is an alkaline chemical liquid, and the other is an acidic chemical liquid.

According to another aspect of the present invention, a cleaning unit is provided. The cleaning unit includes: a substrate cleaning device that cleans the substrate; and a cleaning chemical supply device that supplies the cleaning chemical solution to the substrate cleaning device, the substrate cleaning device having: supplying the cleaning chemical solution to the substrate a first ultrasonic flowmeter that measures a flow rate of the cleaning chemical supplied to the substrate, wherein the first ultrasonic flowmeter is disposed at a position lower than a position of the nozzle.

According to another aspect of the invention, in the cleaning unit, the first ultrasonic flowmeter is configured such that a flow direction of the cleaning chemical solution by the first ultrasonic flowmeter is directed in a vertical direction.

According to another aspect of the invention, in the cleaning unit, the cleaning chemical supply device includes a mixing unit for supplying a cleaning liquid obtained by mixing a chemical liquid and a dilution water to the cleaning liquid. a substrate cleaning device; the chemical solution flow control unit controls a flow rate of the chemical solution, and supplies the chemical solution to the mixing unit; and a dilution water flow rate control unit, the dilution water The flow rate control unit controls the flow rate of the dilution water, and supplies the dilution water to the mixing unit, wherein the chemical liquid flow rate control unit and the dilution water flow rate control unit respectively have a second ultrasonic flow meter and a 3 ultrasonic flow meter, the second ultrasonic flow The third ultrasonic flowmeter is disposed at a position lower than the position of the nozzle.

According to another aspect of the invention, in the cleaning unit, the second ultrasonic flowmeter and the third ultrasonic flowmeter are disposed such that a flow direction of the dilution water flowing through the second ultrasonic flowmeter is The flow direction of the chemical liquid passing through the third ultrasonic flowmeter is directed in the vertical direction.

According to an aspect of the present invention, a cleaning unit is provided. The cleaning unit includes a substrate cleaning device that cleans the substrate, and a cleaning chemical supply device that supplies the cleaning chemical solution to the substrate cleaning device. The substrate cleaning apparatus includes a cleaning unit that cleans the substrate, and a waiting portion that waits for a substrate to be cleaned by the cleaning unit, and supplies the cleaning chemical solution to the waiting substrate. The cleaning chemical supply device includes a mixing unit for supplying a cleaning chemical solution obtained by mixing a chemical liquid and dilution water to the cleaning unit and the waiting unit, and a chemical liquid flow control unit. The chemical solution flow rate control unit controls the flow rate of the chemical solution, and supplies the chemical solution to the mixing unit; and a dilution water flow rate control unit that performs the flow rate of the dilution water Control and supply the dilution water to the mixing section. The chemical liquid flow control unit includes a first chemical liquid flow control unit and a second chemical liquid flow control unit, and the chemical liquid flow control unit is configured to flow a flow rate from the first chemical liquid flow control unit and/or The chemical liquid controlled by the second chemical liquid flow control unit is supplied to the mixing unit. The first chemical liquid flow rate control unit is configured to be capable of controlling the flow rate in the first range. The second chemical liquid flow rate control unit is configured to be capable of controlling the flow rate in a second range that overlaps the first range. The dilution water flow rate control unit includes a first dilution water flow rate control unit and a second dilution water flow rate control unit, and the dilution water flow rate control unit is configured to flow the flow rate from the first dilution water flow rate control unit and/or The dilution water controlled by the second dilution water flow rate control unit is supplied to the mixing unit. The first The dilution water flow rate control unit is configured to be capable of controlling the flow rate in the third range, and the second dilution water flow rate control unit is configured to control the flow rate in a fourth range overlapping a part of the third range.

According to another aspect of the present invention, in the cleaning unit, the cleaning of the substrate in the cleaning unit and the supply of the cleaning chemical to the substrate in the waiting portion are simultaneously performed.

According to another aspect of the invention, in the cleaning unit, the cleaning unit includes: an upper surface cleaning unit configured to supply a cleaning chemical solution to an upper surface of the substrate; and a lower surface cleaning unit The lower surface cleaning unit is configured to supply the cleaning chemical solution to the lower surface of the substrate.

According to the present invention, it is possible to provide a cleaning chemical supply device and a cleaning chemical supply method, which can flexibly adjust the dilution ratio and suppress an increase in size of the device.

According to the present invention, the chemical liquid and the DIW can be supplied in a wide flow rate range without replacing the flow meter.

10‧‧‧DIW supply source

20‧‧‧1st liquid supply source

30‧‧‧Second liquid supply source

50‧‧‧medical solution sharing box

51,51a‧‧‧1st liquid inlet valve

52‧‧‧ pressure gauge

60‧‧‧medical solution sharing box

61,61a‧‧‧2nd liquid inlet valve

62‧‧‧ pressure gauge

72,72a‧‧‧1st inline mixer

73, 73a‧‧‧2nd inline mixer

81‧‧‧DIW supply piping

82‧‧‧DIW divergent piping

83‧‧‧1st DIW piping

84‧‧‧2nd DIW piping

86‧‧‧DIW supply valve 86

87‧‧‧DIW pressure regulator

88‧‧‧DIW pressure gauge

91‧‧‧Pipe

92‧‧‧Pipe

93‧‧‧1st liquid chemical piping

94‧‧‧2nd liquid chemical piping

96‧‧‧1st cleaning liquid pipe

97‧‧‧Second cleaning liquid piping

100‧‧‧medicine supply device

110‧‧‧DIWCLC box

111‧‧‧CLC

111a, 111b, 121a, 121b‧‧‧DIWCLC

113a, 113b, 123a, 123b‧‧ ‧ liquid CLC

112‧‧‧1st DIW supply valve

113‧‧‧2nd DIW supply valve

115,116‧‧‧Inline Mixer

120‧‧‧1st liquid CLC box

121‧‧‧CLC

122‧‧‧1st liquid supply valve

130‧‧‧2nd liquid CLC box

131‧‧‧CLC

132‧‧‧2nd liquid supply valve

200‧‧‧cleaning device

210‧‧‧DIW Cleaning Department 220

220‧‧‧Drug cleaning department

221,241‧‧‧ Waiting Department

222,242‧‧‧Top Surface Cleaning Department

223, 243‧‧‧ lower surface cleaning department

225,227,229‧‧‧ flow meter

230‧‧‧cleaning tank

231a, 232a, 233a‧ ‧ nozzle

Fig. 1 is a schematic front view showing a chemical solution supply device according to a first embodiment.

FIG. 2 is a flow chart of the supply of the chemical liquid to the chemical solution supply device according to the first embodiment.

Fig. 3 is a flow chart showing the supply of chemical liquid to the chemical solution supply device of the second embodiment.

4 is a schematic side view showing a chemical solution supply device included in the cleaning unit of the third embodiment.

FIG. 5 is a schematic perspective view showing a cleaning device included in the cleaning unit according to the third embodiment.

Fig. 6 is a schematic view of a washing unit according to a third embodiment.

FIG. 7 is a schematic side view showing a chemical solution supply device included in the cleaning unit of the fourth embodiment.

Fig. 8 is a schematic view of a washing unit according to a fourth embodiment.

FIG. 9 is a sequence diagram showing the DIW and the supply processing of the chemical liquid in the cleaning unit according to the fourth embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings attached to the specification. In the drawings which are described below, the same or similar components are designated by the same or similar reference numerals, and the repeated description is omitted. In addition, in the invention which arbitrarily combines the individual constituent elements described below, the technical idea of the present invention is also included.

<First Embodiment>

Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a schematic front view showing a chemical solution supply device according to a first embodiment of the present invention. The chemical liquid supply device of the present embodiment is configured to supply, for example, a first chemical liquid which is an alkaline chemical liquid, and a second chemical liquid which is, for example, an acidic chemical liquid, to a cleaning device included in the CMP apparatus. As shown in Fig. 1, the chemical solution supply device 100 according to the first embodiment includes a casing 101, a DIWCLC tank 110 (dilution water control unit), a first chemical liquid CLC tank 120 (first chemical liquid control unit), and a first 2 chemical liquid CLC box 130 (second chemical liquid control unit). The DIWCLC tank 110 controls the supply of DIW (dilution water). The first chemical liquid CLC tank 120 controls the supply of the first chemical liquid. The second chemical liquid CLC tank 130 controls the supply of the second chemical liquid.

The chemical solution supply device 100 further includes a plurality of chemical tanks (utility boxes) 50 or 60 for supplying the first chemical liquid supply source 20 and the second chemical liquid supply source 30 (see FIG. 2 and FIG. The drug solution of 3) is introduced into the drug solution supply device 100. In the illustrated example, six liquid medicine sharing boxes 50 Or 60 is provided in the chemical supply device 100, but this is an example, and the number of the chemical solution sharing tanks 50 or 60 may be appropriately changed depending on the specifications of the cleaning device.

The DIWCLC tank 110, the first chemical liquid CLC tank 120, the second chemical liquid CLC tank 130, and a plurality of chemical liquid sharing tanks 50 or 60 are housed in the casing 101.

The DIWCLC case 110 is configured to supply DIW from a DIW supply source 10, which will be described later, to a first in-line mixer 72 or 72a or a second in-line mixer 73 or 73a (see FIGS. 2 and 3) to be described later. In addition, the DIWCLC box 110 can control the flow rate of the DIW to the flow rate set according to the feedback control.

The first chemical liquid CLC tank 120 is configured to supply the first chemical liquid from the first chemical liquid supply source 20 to a first in-line mixer 72 or 72a (see FIGS. 2 and 3) to be described later. Further, the first chemical liquid CLC tank 120 can control the flow rate of the first chemical liquid to a flow rate set according to feedback control.

Similarly, the second chemical liquid CLC tank 130 is configured to supply the second chemical liquid from the second chemical liquid supply source 30 to a second in-line mixer 73 or 73a (see FIGS. 2 and 3) to be described later. Further, the second chemical liquid CLC tank 130 can control the flow rate of the second chemical liquid to a flow rate set according to feedback control.

Although not shown, the chemical supply device 100 includes a pipe, a valve, a pressure gauge, and the like for transporting the DIW, the first chemical liquid, or the second chemical liquid. The detailed structure will be described with reference to FIGS. 2 and 3.

FIG. 2 is a flow chart of the supply of the chemical liquid to the chemical solution supply device 100 according to the first embodiment of the present invention. As shown in the figure, the chemical supply device 100 is configured to be in fluid communication with a DIW supply source 10 for supplying DIW through a nozzle, and in fluid communication with a first chemical supply source 20 for supplying a first chemical liquid, and The second chemical liquid supply source 30 for supplying the second chemical liquid is in fluid communication. Further, the chemical solution supply device 100 is configured to be in fluid communication with the cleaning device 200 (substrate cleaning device). Specifically, the medical solution supply device 100 is configured to be in fluid communication with the cleaning device 200 to enable The diluted first chemical liquid (first cleaning chemical liquid) and the diluted second chemical liquid (second cleaning chemical liquid) are supplied to the cleaning device 200.

The cleaning device 200 includes a DIW cleaning unit 210 that cleans a cleaning target such as a semiconductor substrate polished by the polishing device with DIW, and a chemical cleaning unit 220 that dilutes the chemical cleaning unit 220. The chemical solution (cleaning liquid) cleans the object to be cleaned, such as a semiconductor substrate polished by the polishing apparatus. The DIW cleaning unit 210 is composed of, for example, an ultrasonic water cleaning unit and another DIW cleaning unit. The chemical liquid cleaning unit 220 is constituted by, for example, a roll type cleaning unit or the like. The DIW cleaning unit 210 and the chemical cleaning unit 220 coexist in the same cleaning tank 230.

The chemical solution supply device 100 includes a first in-line mixer 72 (corresponding to an example of a first mixing unit), a second in-line mixer 73 (corresponding to an example of a second mixing unit), and a first chemical liquid CLC. a tank 120; a second chemical liquid CLC tank 130; and a DIWCLC tank 110. The first in-line mixer 72 mixes the first chemical liquid and the DIW to generate a first cleaning chemical liquid. The second in-line mixer 73 mixes the second chemical liquid and the DIW to generate a second cleaning chemical liquid. The first chemical liquid CLC tank 120 controls the flow rate of the first chemical liquid supplied from the first chemical liquid supply source 20 to the first in-line mixer 72. The second chemical liquid CLC tank 130 controls the flow rate of the second chemical liquid supplied from the second chemical liquid supply source 30 to the second in-line mixer 73. The DIWCLC tank 110 controls the flow rate of the DIW supplied from the DIW supply source 10 to the first in-line mixer 72 or the second in-line mixer 73.

The first in-line mixer 72 is configured to supply the generated first cleaning chemical to the chemical cleaning unit 220. Similarly, the second in-line mixer 73 is configured to supply the generated second cleaning chemical to the chemical cleaning unit 220.

The DIWCLC tank 110 has a first DIW supply valve 112, a second DIW supply valve 113, and a CLC (Closed Loop Controller) 111. By opening the 1st DIW The supply valve 112 and the dilution DIW are supplied from the DIW supply source 10 to the first in-line mixer 72. By opening the second DIW supply valve 113, the dilution DIW is supplied from the DIW supply source 10 to the second in-line mixer 73. The CLC 111 adjusts the flow rate supplied to the first DIW supply valve 112 and the second DIW supply valve 113. In addition, the CLC 111 measures the flow rate of the DIW flowing through the CLC 111. Based on the measurement result, the CLC 111 adjusts the opening degree of the internal control valve of the CLC 111 (feedback control) so that the flow rate of the DIW flowing in the CLC 111 becomes a desired flow rate.

The DIWCLC tank 110 supplies the DIW to the first in-line mixer 72 by closing the second DIW supply valve 113 and opening the first DIW supply valve 112. On the other hand, the DIWCLC tank 110 supplies the DIW to the second in-line mixer 73 by closing the first DIW supply valve 112 and opening the second DIW supply valve 113. In other words, the DIWCLC tank 110, the first DIW supply valve 112, and the second DIW supply valve 113 are used as the dilution water supply switching unit that switches the supply destination of the DIW between the first in-line mixer 72 and the second in-line mixer 73. Features.

The first chemical liquid CLC tank 120 has a first chemical liquid supply valve 122 for supplying the first chemical liquid supply source 20 from the first chemical liquid supply source 20 to the first in-line mixer 72; And the CLC 121 which measures the flow rate of the first chemical liquid flowing through the first chemical liquid supply valve 122. The CLC 121 measures the flow rate of the first chemical liquid flowing through the CLC 121. Based on the measurement result, the CLC 121 adjusts the opening degree of the internal control valve of the CLC 121 (feedback control) so that the flow rate of the first chemical liquid flowing through the CLC 121 becomes a desired flow rate.

The second chemical liquid CLC tank 130 has a second chemical liquid supply valve 132 for supplying the second chemical liquid supply source 30 from the second chemical liquid supply source 30 to the second in-line mixer 73; And the CLC 131 which measures the flow rate of the second chemical liquid flowing through the second chemical liquid supply valve 122. CLC131 measures the flow rate of the second chemical solution flowing through the CLC131. CLC131 is based on this test As a result, the opening degree of the internal control valve of the CLC 131 is adjusted (feedback control) so that the flow rate of the second chemical liquid flowing through the CLC 131 becomes a desired flow rate.

Further, the chemical solution supply device 100 includes a chemical solution sharing tank 50 and a chemical solution sharing tank 60. The chemical solution sharing tank 50 introduces the first chemical liquid from the first chemical liquid supply source 20 into the CLC 121 of the first chemical liquid CLC tank 120. The chemical solution sharing tank 60 introduces the second chemical liquid from the second chemical liquid supply source 30 into the CLC 131 of the second chemical liquid CLC tank 130.

The chemical solution sharing tank 50 is provided in the piping 91 of the CLC 121 that connects the first chemical liquid supply source 20 and the first chemical liquid CLC tank 120, and has a first chemical liquid inlet valve 51 that supplies the first chemical liquid to the piping 91, And a pressure gauge 52 that measures the fluid pressure in the pipe 91. The first chemical liquid inlet valve 51 is opened and closed by, for example, a control device (not shown).

Similarly, the chemical solution sharing tank 60 is provided in the piping 92 of the CLC 131 that connects the second chemical liquid supply source 30 and the second chemical liquid CLC tank 130, and has a second chemical liquid inlet valve that supplies the second chemical liquid to the piping 92. 61. A pressure gauge 62 for measuring the fluid pressure in the pipe 92. The second chemical liquid inlet valve 61 is opened and closed by, for example, a control device (not shown).

The chemical solution supply device 100 has a DIW supply pipe 81 whose one end is connected to the DIW supply source 10 and whose other end is connected to the DIW cleaning unit 210 of the cleaning device 200. The DIW supply pipe 81 is provided with a DIW supply valve 86, a DIW pressure regulator 87, and a DIW pressure gauge 88. The DIW supply valve 86 controls the supply of the DIW from the DIW supply source 10 to the DIW supply pipe 81 by being opened and closed. The DIW pressure regulator 87 adjusts the supply pressure of the DIW from the DIW supply pipe 81 to the DIW cleaning unit 210. The DIW pressure gauge 88 measures the pressure of the DIW passing through the inside of the DIW supply pipe 81.

DIW supply valve 86 and DIW pressure regulator 87 on DIW supply piping 81 A DIW branch pipe 82 is connected between, and one end of the DIW branch pipe 82 is connected to the CLC 111 of the DIWCLC case 110. The CLC 111 is connected to a first DIW pipe 83 that is in fluid communication with the first in-line mixer 72, and a second DIW pipe 84 that is in fluid communication with the second in-line mixer 73. The first DIW supply valve 112 is provided in the first DIW pipe 83, and is opened and closed when the DIW is supplied to the first in-line mixer 72. The second DIW supply valve 113 is provided on the second DIW pipe 84, and is opened and closed when the DIW is supplied to the second in-line mixer 73.

The first chemical liquid pipe 93 that is in fluid communication with the first in-line mixer 72 is connected to the CLC 121 of the first chemical liquid CLC tank 120. The first chemical liquid supply valve 122 is provided in the first chemical liquid pipe 93, and is opened and closed when the first chemical liquid is supplied to the first in-line mixer 72. The first cleaning chemical liquid pipe 96 is connected to the first in-line mixer 72, and one end of the first cleaning chemical liquid pipe 96 is connected to the chemical liquid cleaning unit 220.

The second chemical liquid pipe 94 that is in fluid communication with the second in-line mixer 73 is connected to the CLC 131 of the second chemical liquid CLC tank 130. The second chemical liquid supply valve 132 is provided in the second chemical liquid pipe 94, and is opened and closed when the second chemical liquid is supplied to the second in-line mixer 73. The second cleaning chemical liquid pipe 97 is connected to the second in-line mixer 73, and one end of the second cleaning chemical liquid pipe 97 is connected to the chemical liquid cleaning unit 220.

The CLC 111 of the DIWCLC tank 110, the CLC 121 of the first chemical liquid CLC tank 120, and the CLC 131 of the second chemical liquid CLC tank 130 are configured to receive a signal indicating a predetermined flow rate value from a control device not shown. Based on the flow rate value, the opening degrees of the internal control valves of the CLC 111, the CLC 121, and the CLC 131 are controlled.

Next, the chemical liquid supply process in the chemical solution supply device 100 shown in Fig. 2 will be described. When the first cleaning chemical is supplied to the chemical cleaning unit 220 of the cleaning device 200, first, the liquid medicine is shared. The first chemical liquid inlet valve 51 of the tank 50 is opened. The flow rate of the first chemical liquid is adjusted by the CLC 121 of the first chemical liquid CLC tank 120, and the first chemical liquid having a predetermined flow rate is supplied from the first chemical liquid supply source 20 to the first in-line mixer 72.

When the DIW supply valve 86 on the DIW supply pipe 81 is opened, the DIW is supplied from the DIW supply source 10 to the CLC 111 of the DIWCLC case 110. By opening the first DIW supply valve 112, DIW is supplied from the DIWCLC tank 110 to the first in-line mixer 72. At this time, the second DIW supply valve 113 is closed in advance.

The DIW is mixed with the first chemical liquid supplied to the first in-line mixer 72. The first cleaning chemical liquid thus generated is supplied to the chemical liquid cleaning unit 220 via the first cleaning chemical liquid pipe 96.

While the first cleaning chemical is supplied to the chemical cleaning unit 220, the supply of the second chemical liquid to the second in-line mixer 73 is stopped. Specifically, the second chemical liquid inlet valve 61 of the chemical solution sharing tank 60 and/or the second chemical liquid supply valve 132 of the second chemical liquid CLC tank 130 are closed. Thereby, the second cleaning chemical is not supplied to the chemical cleaning unit 220, and only the first cleaning liquid is supplied to the chemical cleaning unit 220.

In the chemical solution supply device 100 of the present embodiment, the first cleaning chemical liquid and the second cleaning chemical liquid can be alternately supplied. When switching from the first cleaning chemical to the second cleaning liquid, the first DIW supply valve 112 of the DIWCLC tank 110 is closed, and the second DIW supply valve 113 is opened. Thereby, the DIW is supplied from the DIWCLC case 110 to the second in-line mixer 73. Next, the second chemical liquid inlet valve 61 of the chemical solution sharing tank 60 is opened. The flow rate of the second chemical liquid is adjusted by the CLC 131 of the second chemical liquid CLC tank 130, and the second chemical liquid having a predetermined flow rate is supplied from the second chemical liquid supply source 30 to the second in-line mixer 73. The DIW is mixed with the second chemical liquid supplied to the second in-line mixer 73. The second cleaning chemical solution thus generated is supplied to the chemical liquid cleaning unit 220 through the second cleaning chemical liquid pipe 97.

When the second cleaning chemical is supplied to the chemical cleaning unit 220, the first chemical liquid is stopped. Supply to the first in-line mixer 72. Specifically, the first chemical liquid inlet valve 51 of the chemical solution sharing tank 50 and/or the first chemical liquid supply valve 122 of the first chemical liquid CLC tank 120 are closed. Thereby, the first cleaning chemical liquid is not supplied to the chemical liquid cleaning unit 220, and only the second cleaning chemical liquid is supplied to the chemical liquid cleaning unit 220.

Further, when switching from the second cleaning chemical to the first cleaning liquid, the second DIW supply valve 113 of the DIWCLC tank 110 is closed, and the first DIW supply valve 112 is opened. Further, the first chemical liquid inlet valve 51 of the chemical solution sharing tank 50 is opened, and the first chemical liquid supply valve 122 of the first chemical liquid CLC tank 120 is opened. Further, the second chemical liquid inlet valve 61 and/or the second chemical liquid supply valve 132 of the chemical solution sharing tank 60 are closed. Thereby, the second cleaning chemical is not supplied to the chemical cleaning unit 220, and only the first cleaning liquid is supplied to the chemical cleaning unit 220.

Further, in the present embodiment, the flow rates of the first chemical liquid and the second chemical liquid which are controlled by the first chemical liquid CLC tank 120 and the second chemical liquid CLC tank 130 are, for example, 30 ml/min or more and 300 ml/ Min below. Further, the flow rate range of the DIW of the flow rate controlled by the DIWCLC tank 110 is, for example, 200 ml/min or more and 2000 ml/min or less. Therefore, the dilution ratio of the first chemical liquid or the second chemical liquid to DIW is 1:1 or more and 1:65 or less.

As described above, the chemical solution supply device 100 of the present embodiment includes the DIWCLC tank 110, and the flow rate of the DIW supplied from the DIW supply source 10 to the first in-line mixer 72 or the second in-line mixer 73 is supplied to the DIWCLC tank 110. Take control. Further, the chemical solution supply device 100 switches the supply destination of the DIW between the first in-line mixer 72 and the second in-line mixer 73. Therefore, by controlling the flow rate of the DIW supplied to the first in-line mixer 72 and the second in-line mixer 73, it is possible to flexibly respond to changes in the dilution ratio of the first chemical liquid and the second chemical liquid.

In the present embodiment, since the first chemical liquid and the second chemical liquid can be diluted by the common DIWCLC tank 110, it is not necessary to set the flow rates of the two DIWs as in the prior art. In this case, it is possible to suppress an increase in size of the chemical solution supply device 100. In other words, since the flowmeter of the DIW can be reduced compared to the prior art, the cost of the device can be reduced.

When the first chemical liquid and the second chemical liquid are diluted by two DIW flow meters as in the prior art, since the errors (instrument errors) of the two DIW flow meters are different, even if the same dilution ratio is set To dilute the first chemical solution and the second chemical liquid, it is also possible that the same dilution ratio is not caused by the instrument error. On the other hand, in the chemical solution supply device 100 of the present embodiment, since the first chemical liquid and the second chemical liquid are diluted by the common DIWCLC case 110, the instrument error caused by the DIWCLC case 110 can be eliminated. The difference in the dilution ratio between the first chemical solution and the first chemical liquid.

Further, in the chemical solution supply device 100 of the present embodiment, while the first cleaning chemical is supplied to the chemical cleaning unit 200 of the cleaning device 200, the supply of the second chemical liquid is stopped, and the second cleaning liquid is supplied to the chemical cleaning. During the period of the portion 220, the supply of the first chemical liquid is stopped. Therefore, it is possible to prevent the first chemical liquid, which is the first chemical liquid, and the second chemical liquid, which are the acidic chemical liquid, from being mixed in the cleaning of the cleaning device 200, and it is possible to prevent the mixing of the alkaline chemical solution and the acidic chemical solution. The production of toxic gases.

<Second Embodiment>

Next, a chemical solution supply device according to a second embodiment of the present invention will be described. 3 is a flow chart of the supply of the chemical liquid to the chemical solution supply device 100 according to the second embodiment of the present invention. The schematic front view of the chemical solution supply device 100 of the second embodiment is the same as the schematic front view of the chemical solution supply device 100 shown in FIG. 1, and thus the description thereof is omitted.

In the second embodiment, the cleaning device 200 has two DIW cleaning units and a chemical liquid cleaning unit, respectively, which are different from the first embodiment. Accordingly, the DIWCLC tank 110, the first chemical liquid CLC tank 120, and the second chemical liquid CLC tank 130 of the chemical solution supply device 100 have two each. This is also different from the first embodiment in CLC. The number of other valves and chemical common boxes and the piping structure are also different from those of the first embodiment. In the following description, the same components as those in the first embodiment will be described, and the same components as those in the first embodiment will be denoted by the same reference numerals and will not be described.

As shown in FIG. 3, the chemical solution supply device 100 is configured to be in fluid communication with a DIW supply source 10a for supplying DIW through a pipe. The cleaning device 200 includes a DIW cleaning unit 210a that cleans a cleaning target such as a semiconductor substrate polished by the polishing device with DIW, and a chemical cleaning unit 220a that dilutes the chemical cleaning unit 220a. The chemical solution (cleaning liquid) cleans the object to be cleaned, such as a semiconductor substrate polished by the polishing apparatus. Similarly to the DIW cleaning unit 210, the DIW cleaning unit 210a is constituted by, for example, an ultrasonic water cleaning unit or another DIW cleaning unit. The chemical liquid cleaning unit 220a is constituted by, for example, a roll type cleaning unit or the like, similarly to the chemical liquid cleaning unit 220. The DIW cleaning unit 210a and the chemical cleaning unit 220a coexist in the same cleaning tank 230a.

The chemical liquid supply device 100 includes a first in-line mixer 72a (first mixing unit) that mixes the first chemical liquid and the DIW to generate a first cleaning chemical liquid; and a second indirect type The mixer 73a (second mixing unit), the second in-line mixer 73a mixes the second chemical liquid and the DIW to generate a second cleaning chemical liquid. The first chemical liquid CLC tank 120 is configured to control the flow rate of the first chemical liquid supplied from the first chemical liquid supply source 20 to the first in-line mixer 72a. The second chemical liquid CLC tank 130 is configured to control the flow rate of the second chemical liquid supplied from the second chemical liquid supply source 30 to the second in-line mixer 73a. The DIWCLC tank 110 is configured to control the flow rate of the DIW supplied from the DIW supply source 10a to the first in-line mixer 72a or the second in-line mixer 73a.

The first in-line mixer 72a is configured to supply the generated first cleaning chemical to the chemical cleaning unit 220a. Similarly, the second in-line mixer 73a is configured to supply the generated second cleaning chemical to the chemical cleaning unit 220a.

The DIWCLC tank 110 has a first DIW supply valve 112a, a second DIW supply valve 113a, and a CLC 111a. The first DIW supply valve 112a supplies the dilution DIW from the DIW supply source 10a to the first in-line mixer 72a. The second DIW supply valve 113a supplies the dilution DIW from the DIW supply source 10a to the second in-line mixer 73a. The CLC 111a adjusts the flow rate supplied to the first DIW supply valve 112a and the second DIW supply valve 113a. The CLC 111a measures the flow rate of the DIW flowing through the CLC 111a. The CLC 111a adjusts (feedback control) the opening degree of the internal control valve of the CLC 11a based on the measurement result so that the flow rate of the DIW flowing in the CLC 11a becomes a desired flow rate.

The DIWCLC tank 110 supplies the DIW to the first in-line mixer 72a by closing the second DIW supply valve 113a and opening the first DIW supply valve 112a. On the other hand, the DIWCLC tank 110 supplies the DIW to the second in-line mixer 73a by closing the first DIW supply valve 112a and opening the second DIW supply valve 113a. In other words, the DIWCLC tank 110, the first DIW supply valve 112a, and the second DIW supply valve 113a are switched to supply dilution water for switching the supply destination of the DIW between the first in-line mixer 72a and the second in-line mixer 73a. The department functions.

The first chemical liquid CLC tank 120 includes a first chemical liquid supply valve 122a that supplies the first chemical liquid from the first chemical liquid supply source 20 to the first in-line mixer 72a, and the CLC121a. The CLC 121a measures the flow rate of the first chemical liquid flowing through the first chemical liquid supply valve 122a. The CLC 121a adjusts (feedback control) the opening degree of the internal control valve of the CLC 121a based on the measurement configuration so that the flow rate of the first chemical liquid flowing through the CLC 121a becomes a desired flow rate.

The second chemical liquid CLC tank 130 includes a second chemical liquid supply valve 132a that supplies the second chemical liquid from the second chemical liquid supply source 30 to the second in-line mixer 73a; and the CLC131a The CLC 131a measures the flow rate of the second chemical solution flowing through the second chemical solution supply valve 132a. The CLC131a adjusts the opening degree of the internal control valve of the CLC131a based on the measurement structure. (Feedback control) so that the flow rate of the second chemical liquid flowing in the CLC 131a becomes a desired flow rate.

Further, the chemical solution supply device 100 includes a chemical solution sharing tank 50a and a chemical solution sharing tank 60a. The chemical solution sharing tank 50a introduces the first chemical liquid from the first chemical liquid supply source 20 into the CLC 121a of the first chemical liquid CLC tank 120. The chemical solution sharing tank 60a introduces the second chemical liquid from the second chemical liquid supply source 30 into the CLC 131a of the second chemical liquid CLC tank 130.

The chemical solution sharing tank 50a has a first chemical liquid inlet valve 51a provided on a pipe 91a that connects the first chemical liquid supply source 20 and the CLC 121a of the first chemical liquid CLC tank 120; In the gauge 52a, the pressure gauge 52a measures the fluid pressure in the pipe 91a. The first chemical liquid inlet valve 51a is opened and closed by a control device (not shown), and the first chemical liquid is supplied to the pipe 91a.

Similarly, the chemical solution sharing tank 60a has a second chemical liquid inlet valve 61a provided on the piping 92a that connects the second chemical liquid supply source 30 and the CLC 131a of the second chemical liquid CLC tank 130; And a pressure gauge 62a that measures the fluid pressure in the pipe 92a. The second chemical liquid inlet valve 61a is opened and closed by a control device (not shown), and the second chemical liquid is supplied to the pipe 92a.

The chemical solution supply device 100 has a DIW supply pipe 81a whose one end is connected to the DIW supply source 10a and whose other end is connected to the DIW cleaning unit 210a of the cleaning device 200. The DIW supply pipe 81a is provided with a DIW supply valve 86a, a DIW pressure regulator 87a, and a DIW pressure gauge 88a. The DIW supply valve 86a controls the supply of the DIW from the DIW supply source 10a to the DIW supply pipe 81a by being opened and closed. The DIW pressure regulator 87a controls the supply pressure of the DIW from the DIW supply pipe 81a to the DIW cleaning unit 210a. The DIW pressure gauge 88a measures the pressure of the DIW passing through the inside of the DIW supply pipe 81a.

A DIW branch pipe 82a is connected between the DIW supply valve 86a and the DIW pressure regulator 87a on the DIW supply pipe 81a, and one end of the branch pipe 82a is connected to the CLC 111a of the DIWCLC case 110. A first DIW pipe 83a that is in fluid communication with the first in-line mixer 72a and a second DIW pipe 84a that is in fluid communication with the second in-line mixer 73a are connected to the CLC 111a. The first DIW supply valve 112a is provided in the first DIW pipe 83a, and is opened and closed when the DIW is supplied to the first in-line mixer 72a. The second DIW supply valve 113a is provided in the second DIW pipe 84a, and is opened and closed when the DIW is supplied to the second in-line mixer 73a.

The first chemical liquid pipe 93a that is in fluid communication with the first in-line mixer 72a is connected to the CLC 121a of the first chemical liquid CLC tank 120. The first chemical liquid supply valve 122a is provided in the first chemical liquid pipe 93a, and is opened and closed when the first chemical liquid is supplied to the first in-line mixer 72a. The first cleaning chemical liquid pipe 96a is connected to the first in-line mixer 72a, and one end of the first cleaning chemical liquid pipe 96a is connected to the chemical liquid cleaning unit 220a.

The second chemical liquid pipe 94a that is in fluid communication with the second in-line mixer 73a is connected to the CLC 131a of the second chemical liquid CLC tank 130. The second chemical liquid supply valve 132a is provided in the second chemical liquid pipe 94a, and is opened and closed when the second chemical liquid is supplied to the second in-line mixer 73a. The second cleaning chemical liquid pipe 97a is connected to the second in-line mixer 73a, and one end of the second cleaning chemical liquid pipe 97a is connected to the chemical liquid cleaning unit 220a.

The CLC 111a of the DIWCLC tank 110, the CLC 121a of the first chemical liquid CLC tank 120, and the CLC 131a of the second chemical liquid CLC tank 130 are configured to receive a signal indicating a predetermined flow rate value from a control device not shown. Based on the flow rate value, the opening degrees of the internal control valves of the CLCs 111a, CLC 121a, and CLC 131a are controlled.

Next, the chemical liquid supply process in the chemical solution supply device 100 shown in Fig. 3 will be described. In the chemical solution supply device 100 of the second embodiment, as described in the first embodiment, the first cleaning chemical liquid or the second cleaning chemical liquid can be supplied to the chemical liquid cleaning unit 220, and The first cleaning solution or the second cleaning solution is supplied to the chemical cleaning unit 220a. Since the first cleaning liquid or the second cleaning liquid is supplied to the chemical cleaning unit 220, the same processing as in the first embodiment is omitted. Therefore, the first cleaning liquid or the second cleaning liquid is supplied to the medicine. The processing of the liquid cleaning unit 220a will be described.

When the first cleaning chemical is supplied to the chemical cleaning unit 220a of the cleaning device 200, first, the first chemical liquid inlet valve 51a of the chemical solution sharing tank 50a is opened. The flow rate of the first chemical liquid is adjusted by the CLC 121a of the first chemical liquid CLC tank 120, and the first chemical liquid having a predetermined flow rate is supplied from the first chemical liquid supply source 20 to the first in-line mixer 72a.

The DIW supply valve 86a on the DIW supply pipe 81a is opened, and the DIW is supplied from the DIW supply source 10a to the CLC 111a of the DIWCLC case 110. The DIW is supplied from the DIWCLC tank 110 to the first in-line mixer 72a by opening the first DIW supply valve 112a. At this time, the second DIW supply valve 113a is closed in advance.

The DIW is mixed with the first chemical liquid supplied to the first in-line mixer 72a. The first cleaning chemical solution thus generated is supplied to the chemical liquid cleaning unit 220a via the first cleaning chemical liquid pipe 96a.

While the first cleaning chemical is supplied to the chemical cleaning unit 220a, the supply of the second chemical liquid to the second in-line mixer 73a is stopped. Specifically, the second chemical liquid inlet valve 61a of the chemical solution sharing tank 60a and/or the second chemical liquid supply valve 132a of the second chemical liquid CLC tank 130 are closed. Thereby, the second cleaning chemical is not supplied to the chemical cleaning unit 220a, and only the first cleaning liquid is supplied to the chemical cleaning unit 220a.

In the chemical solution supply device 100 of the second embodiment, the first cleaning chemical liquid and the second cleaning chemical liquid can be alternately supplied to the chemical liquid cleaning unit 220 and the chemical liquid cleaning unit 22a. When switching from the first cleaning chemical to the second cleaning liquid, the first DIW supply valve 112a of the DIWCLC tank 110 is closed, and the second DIW supply valve 113a is opened. Thereby, the DIW is supplied from the DIWCLC case 110 to the second in-line mixer 73a.

Further, the second chemical liquid inlet valve 61a of the chemical solution sharing tank 60a is opened. The flow rate of the second chemical liquid is adjusted by the CLC 131a of the second chemical liquid CLC tank 130, and the second chemical liquid having a predetermined flow rate is supplied from the second chemical liquid supply source 30 to the second in-line mixer 73a. The DIW is mixed with the second chemical liquid supplied to the second in-line mixer 73a. The second cleaning chemical solution thus generated is supplied to the chemical liquid cleaning unit 220a via the second cleaning chemical liquid pipe 97a.

While the second cleaning chemical is supplied to the chemical cleaning unit 220a, the supply of the first chemical liquid to the first in-line mixer 72a is stopped. Specifically, the first chemical liquid inlet valve 51a of the chemical solution sharing tank 50a and/or the first chemical liquid supply valve 122a of the first chemical liquid CLC tank 120 are closed. Thereby, the first cleaning chemical solution is not supplied to the chemical liquid cleaning unit 220a, and only the second cleaning chemical liquid is supplied to the chemical liquid cleaning unit 220a.

Further, when the second cleaning liquid medicine is switched to the first cleaning chemical liquid, the second DIW supply valve 113a of the DIWCLC tank 110 is closed, and the first DIW supply valve 112a is opened. Further, the first chemical liquid inlet valve 51a of the chemical solution sharing tank 50a is opened, and the first chemical liquid supply valve 122a of the first chemical liquid CLC tank 120 is opened. Further, the second chemical liquid inlet valve 61a and/or the second chemical liquid supply valve 132a of the chemical solution sharing tank 60a are closed. Thereby, the second cleaning chemical is not supplied to the chemical cleaning unit 220a, and only the first cleaning liquid is supplied to the chemical cleaning unit 220a.

Further, in the present embodiment, the flow rates of the first chemical liquid and the second chemical liquid of the flow rate are controlled by the CLCs 121 and 121a of the first chemical liquid CLC tank 120 and the CLCs 131 and 131a of the second chemical liquid CLC tank 130, for example, respectively. It is 30 ml/min or more and 300 ml/min or less. In addition, the flow rate of the DIW of the flow rate is controlled by the CLCs 111 and 111a of the DIWCLC tank 110, for example, 200 ml/min, respectively. Above, 2000ml/min or less. Therefore, the dilution ratio of the first chemical liquid or the second chemical liquid to DIW is 1:1 or more and 1:65 or less.

The drug solution supply device 100 of the second embodiment has the same advantages as the drug solution supply device 100 of the first embodiment. In addition, the chemical solution supply device 100 of the second embodiment can alternately supply the first cleaning solution and the second cleaning solution to the two chemical cleaning units 220 and 220a.

In the second embodiment, the first cleaning chemical liquid and the second cleaning chemical liquid are supplied to the two chemical liquid cleaning units 220 and 220a. However, the present invention is not limited thereto, and the first cleaning medicine may be configured. The liquid and the second cleaning chemical are supplied to three or more chemical cleaning units. In this case, the number of CLCs corresponding to the chemical liquid cleaning unit may be increased in the DIWCLC tank 110, the first chemical liquid CLC tank 120, and the second chemical liquid CLC tank 130.

In the first embodiment and the second embodiment, the first chemical liquid is an alkaline chemical liquid, and the second chemical liquid is an acidic chemical liquid. However, the first chemical liquid may be reversed. As the acidic chemical solution, the second chemical solution is used as an alkaline chemical solution.

<Third embodiment>

Next, a cleaning unit according to a third embodiment of the present invention will be described. 4 is a schematic side view showing a chemical solution supply device included in the cleaning unit of the third embodiment. The chemical solution supply device is configured to supply a chemical solution such as hydrofluoric acid or ammonia to a cleaning device for cleaning each part of the CMP device.

As shown in FIG. 4, the chemical solution supply device 100 of the present embodiment includes a frame 102, and a chemical solution dilution tank 140 which dilutes the chemical solution with DIW (dilution water) and supplies it to the diluted solution. Liquid (cleaning liquid). In the illustrated example, four chemical liquid dilution tanks 140 are provided in the chemical liquid supply device 100, but this is an example, and depending on the specifications of the cleaning device, When the amount of the chemical solution dilution tank 140 is changed. As shown in the figure, the chemical solution dilution tank 140 is housed in the frame 102. The chemical solution dilution tank 140 is configured to mix the DIW from the DIW supply source 10 to be described later and the chemical liquid from the chemical supply source 40, and supply the cleaning solution to the cleaning device 200 (see FIG. 6). Although not shown, the chemical supply device 100 has a pipe, a valve, a pressure gauge, and the like for transporting DIW or chemical liquid. They are explained in detail in FIG. 6.

FIG. 5 is a schematic perspective view showing a cleaning device included in the cleaning unit according to the third embodiment. The cleaning device is a device for cleaning each portion of the semiconductor substrate and the CMP device using the cleaning chemical supplied from the chemical supply device 100 shown in FIG. 4 .

As shown in FIG. 5, the cleaning apparatus 200 includes a frame 201, a chemical liquid cleaning unit 220 that cleans a semiconductor substrate or the like with a cleaning chemical solution, and a plurality of chemical liquid supply tanks 250, the plurality of medicines. The liquid supply tank 250 supplies the cleaning chemical to the chemical cleaning unit 220. In the illustrated example, the cleaning device 200 exemplifies four chemical liquid cleaning units 220 and two chemical liquid supply tanks 250. However, this is an example, and the number of the cleaning apparatuses 200 may be appropriately changed depending on the specifications of the cleaning apparatus 200.

Although not shown, the cleaning device 200 has a pipe, a valve, a pressure gauge, and the like for transporting DIW or chemical liquid. They are explained in detail in FIG. 6. The chemical solution supply tank 250 has a flow meter for measuring the flow rate of the cleaning chemical supplied to the chemical cleaning unit 220 (see FIG. 6). As the flow rate meter, an orifice flowmeter that measures a flow rate based on a differential pressure of a fluid has been conventionally used. However, in recent years, an ultrasonic flowmeter capable of measuring the flow rate of the cleaning chemical liquid has been developed. Since the ultrasonic flowmeter has a wide measurement range of the flow rate as compared with the orifice flowmeter, in the present embodiment, an ultrasonic flowmeter is used as the flow rate table of the chemical solution supply tank 250.

On the other hand, the ultrasonic flowmeter is based on ultrasonic waves transmitted inside the pipe. Since the flow rate is caused by the presence of air bubbles in the piping, the ultrasonic waves are scattered and it is difficult to perform accurate measurement. Therefore, in the present embodiment, the position of the flow rate table included in the chemical solution supply tank 250 is set lower than the position at which the cleaning chemical liquid is supplied to the nozzle of the chemical liquid cleaning unit 220. Thereby, the air bubbles in the piping of the flow meter are easily moved to the nozzle, and the phenomenon that the air bubbles in the pipe are retained in the flow meter is suppressed.

Further, in the present embodiment, the flow rate meter is configured such that the flow direction of the cleaning chemical liquid in the flow rate table included in the chemical solution supply tank 250 is oriented in the vertical direction. Further, the flow meter is configured to flow from the bottom to the top through the cleaning chemical of the flow meter. As a result, since the air bubbles in the pipe of the flow meter move upward, the phenomenon in which the air bubbles in the pipe are retained in the flow rate meter is further suppressed.

Next, the cleaning unit of the present embodiment will be described. Fig. 6 is a schematic view of a washing unit according to a third embodiment. As shown in the figure, the cleaning unit includes: the chemical solution supply device 100 shown in FIG. 4 (corresponding to an example of the cleaning chemical solution supply device); and the cleaning device 200 shown in FIG. 5 (corresponding to one of the substrate cleaning devices) example). In addition, in FIG. 6, one of the four chemical liquid dilution tanks 140 shown in FIG. 4 is illustrated, and one of the two chemical liquid supply tanks 250 shown in FIG. 5 and four chemical liquid cleaning parts are illustrated. One of 220.

The chemical solution supply device 100 is configured such that the DIW supply source 10 for supplying DIW via a pipe is in fluid communication with a chemical supply source 40 for supplying a chemical liquid such as hydrofluoric acid or ammonia. Further, the chemical solution supply device 100 is configured to be in fluid communication with the cleaning device 200. Specifically, the chemical solution supply device 100 is in fluid communication with the cleaning device 200 so that the DIW and the diluted chemical solution can be supplied to the cleaning device 200 .

The cleaning device 200 includes a DIW cleaning unit 210 that uses a DIW cleaning target, and a chemical cleaning unit 220 that uses the diluted chemical solution (cleaning liquid) to clean the object. Wash it. The DIW cleaning unit 210 is made of, for example, ultrasonic water Each part of the CMP apparatus, which is a cleaning target, such as a semiconductor substrate polished by the CMP apparatus, is cleaned by a DIW cleaning unit or the like. The chemical liquid cleaning unit 220 is configured by, for example, a roll type cleaning unit or a pen type cleaning unit, and cleans the object to be cleaned such as a semiconductor substrate polished by the CMP apparatus.

The chemical solution supply device 100 has a chemical solution dilution tank 140 that dilutes the chemical solution with DIW (dilution water) and supplies the diluted chemical solution (cleaning solution) to the cleaning device 200. The chemical cleaning unit 220.

The chemical solution dilution tank 140 has an in-line mixer 115 (corresponding to an example of a mixing unit), DIWCLC 111c (corresponding to an example of a dilution water flow rate control unit), and a chemical solution CLC 113c (corresponding to a chemical liquid flow control unit) example). The in-line mixer 115 mixes the chemical solution and the DIW to form a cleaning chemical solution. The DIWCLC 111c adjusts the flow rate of the DIW supplied from the DIW supply source 10 to the in-line mixer 115. The chemical liquid CLC 113c adjusts the flow rate of the chemical liquid supplied from the chemical liquid supply source 40 to the in-line mixer 115. The in-line mixer 115 is configured to supply the generated cleaning chemical to the chemical cleaning unit 220.

The chemical solution dilution tank 140 further has a DIW supply valve 112c for supplying the dilution DIW from the DIW supply source 10 to the in-line mixer 115. The DIWCLC 111c includes an ultrasonic flow meter (corresponding to an example of the third ultrasonic flow meter) for measuring the flow rate of the DIW flowing in the DIWCLC 111c. The DIWCLC 111c adjusts (feedback control) the opening degree of the internal control valve based on the measurement result of the flow rate so that the flow rate of the DIW flowing in the DIWCLC 111c becomes a desired flow rate.

The chemical solution dilution tank 140 further has a chemical liquid supply valve 114c for supplying the chemical liquid from the chemical liquid supply source 40 to the in-line mixer 115. Liquid CLC113c contains super The acoustic wave flowmeter (corresponding to an example of the second ultrasonic flowmeter) is for measuring the flow rate of the chemical liquid flowing through the chemical solution CLC113c. The chemical liquid CLC 113c adjusts the opening degree of the internal control valve (feedback control) based on the measurement result of the flow rate so that the flow rate of the chemical liquid flowing in the chemical liquid CLC 113c becomes a desired flow rate.

Further, the chemical solution dilution tank 140 has a chemical solution inlet valve 51c provided in a pipe 91c that connects the chemical solution supply source 40 and the chemical solution CLC 113c, and a pressure gauge 52c that measures the fluid pressure in the pipe 91c. The chemical solution inlet valve 51c is opened and closed by, for example, a control device (not shown).

The chemical solution supply device 100 has a DIW supply pipe 81b. One end of the supply pipe 81b is connected to the DIW supply source 10, and the other end is connected to the DIW cleaning unit 210 of the cleaning device 200. A DIW supply valve 86b, a DIW pressure regulator 87b, and a DIW pressure gauge 88b are provided in the DIW supply pipe 81b. When the DIW supply valve 86b is opened and closed, the supply of the DIW from the DIW supply source 10 to the DIW supply pipe 81b is controlled. The DIW pressure regulator 87b adjusts the supply pressure of the DIW from the DIW supply pipe 81b to the DIW cleaning unit 210. The DIW pressure gauge 88b measures the pressure inside the DIW supply pipe 81b.

A DIW branch pipe 82c is connected between the DIW supply valve 86b on the DIW supply pipe 81b and the DIW pressure regulator 87b, and one end of the branch pipe 82c is connected to the DIWCLC 111c. A DIW pipe 83c that is in fluid communication with the in-line mixer 115 is connected to the DIWCLC 111c. The DIW supply valve 112c is provided on the DIW pipe 83c, and is opened and closed when the DIW is supplied to the in-line mixer 115.

A chemical liquid pipe 84c that is in fluid communication with the in-line mixer 115 is connected to the chemical liquid CLC 113c of the chemical solution dilution tank 140. The chemical liquid supply valve 114c is provided in the chemical liquid pipe 84c, and supplies the chemical liquid to the chemical liquid pipe 84c. A cleaning chemical liquid pipe 96b is connected to the in-line mixer 115, and the cleaning One end of the washing liquid pipe 96b is connected to the washing device 200.

The DIWCLC 111c and the chemical liquid CLC 113c of the chemical solution dilution tank 140 are configured to receive a signal indicating a predetermined flow rate value from a control device not shown. The opening degree of the internal control valve of the DIWCLC 111c and the chemical liquid CLC 113c is controlled based on the flow rate value.

The chemical cleaning unit 220 of the cleaning device 200 includes an upper surface cleaning unit 222 that supplies cleaning liquid to the upper surface of the polished substrate, and a lower surface cleaning unit 223. The surface cleaning unit 223 supplies the cleaning chemical solution to the lower surface of the polished substrate to clean it. In addition, the chemical cleaning unit 220 has a waiting portion 221 that is arranged to wait for the substrate to be cleaned by the upper surface cleaning unit 222 and the lower surface cleaning unit 223. The upper surface cleaning unit 222 and the lower surface cleaning unit 223 function as a substrate cleaning unit that simultaneously cleans the upper surface and the lower surface of one substrate. The waiting portion 221 supplies the cleaning chemical solution to the waiting substrate to prevent oxidation of the waiting substrate.

The cleaning device 200 includes a cleaning chemical supply pipe 231, a cleaning chemical supply pipe 232, and a cleaning chemical supply pipe 233. The cleaning chemical supply pipe 231 connects the cleaning chemical pipe 96c and the waiting portion 221 in fluid communication. The cleaning chemical supply pipe 232 connects the cleaning chemical pipe 96c and the upper surface cleaning unit 222 in fluid communication. The cleaning chemical supply pipe 233 connects the cleaning chemical pipe 96c and the lower surface cleaning unit 223 in fluid communication.

The cleaning chemical supply pipe 231 is provided with a cleaning chemical supply valve 224 for supplying the cleaning chemical to the waiting portion 221, and a flow rate table 225 for measuring the flow rate of the supplied cleaning chemical. The cleaning chemical supply pipe 232 is provided with a cleaning chemical supply valve 226 for supplying the cleaning chemical to the upper surface cleaning unit 222, and a flow rate table 227 for measuring the flow rate of the supplied cleaning chemical. Provided on the cleaning chemical supply pipe 233 for supplying the cleaning liquid The cleaning chemical supply valve 228 to the lower surface cleaning unit 223 and the flow rate table 229 for measuring the flow rate of the supplied cleaning chemical liquid. The flow meters 225, 227, and 229 and the cleaning chemical supply valves 224, 226, and 228 are housed in the chemical supply tank 250. The cleaning chemical supply valve 224, the cleaning chemical supply valve 226, and the cleaning chemical supply valve 228 are controlled to be opened and closed by, for example, a control device (not shown).

The downstream end portion of the cleaning chemical supply pipe 231 has a nozzle 231a for supplying the cleaning chemical to the waiting portion 221. Further, the downstream end portion of the cleaning chemical supply pipe 232 has a nozzle 232a for supplying the cleaning chemical to the upper surface cleaning unit 222. Further, the downstream end portion of the cleaning chemical supply pipe 233 has a nozzle 233a for supplying the cleaning chemical to the lower surface cleaning portion 223.

As illustrated in Fig. 5, the flow rate tables 225, 227, and 229 in the chemical solution supply tank 250 are ultrasonic flow meters (corresponding to an example of the first ultrasonic flowmeter). For the flow rate tables 225, 227, and 229, in order to more accurately measure the flow rate of the cleaning chemical liquid, in the present embodiment, the positions of the corresponding flow rate tables 225, 227, and 229 are set to be larger than those of the nozzles 231a, 232a, and 233a. Each position is low. Thereby, the air bubbles in the pipes of the flow meters 225, 227, and 229 are easily moved to the nozzles 231a, 232a, and 233a, and the phenomenon in which the air bubbles in the pipes are retained in the flow meters 225, 227, and 229 is suppressed.

Further, as also described in FIG. 5, the flow rate tables 225, 227, and 229 are configured such that the flow directions of the cleaning chemical liquids through the flow meters 225, 227, and 229 are oriented in the vertical direction. In other words, as shown in FIG. 6, the pipes of the flow meters 225, 227, and 229 are arranged in the vertical direction in a state of being oriented in the vertical direction. In addition, the flow rate tables 225, 227, and 229 and the cleaning chemical supply pipes 231, 232, and 233 are formed in a state in which the cleaning chemicals flowing through the flow meters 225, 227, and 229 flow from the bottom to the top. Thereby, since the air bubbles in the flow meters 225, 227, and 229 move upward, the phenomenon in which the air bubbles stay in the flow meters 225, 227, and 229 is further suppressed.

In addition, the "vertical direction" herein is not only a complete vertical direction but also a direction having a slight angle with respect to the vertical direction. In other words, the "vertical direction" includes the fact that the flow direction of the cleaning liquid medicine passing through the flow meters 225, 227, and 229 is relatively large as the air bubbles of the flow meters 225, 227, and 229 are moved upward without being retained. It has a slight angle in the vertical direction.

In the present embodiment, the positions of the DIWCLC 111c and the chemical liquid CLC 113c are lower than the respective positions of the nozzles 231a, 232a, and 233a, similarly to the flow rate tables 225, 227, and 229 of the chemical solution supply tank 250. As a result, the air bubbles in the ultrasonic flowmeter included in the DIWCLC 111c and the chemical liquid CLC 113c are easily moved to the nozzles 231a, 232a, and 233a, and the phenomenon in which the air bubbles are retained in the ultrasonic flowmeter is suppressed.

Moreover, in the example of FIG. 6, the flow direction of the DIW and the chemical liquid flowing in the DIWCLC111c and the chemical liquid CLC113c is a horizontal direction (horizontal direction). However, the flow direction may be such that the DIWCLC 111c and the chemical liquid CLC 113c are formed in the vertical direction. In this case, since the air bubbles in the ultrasonic flowmeter of the DIWCLC 111c and the chemical liquid CLC 113c move upward, the phenomenon in which the air bubbles remain in the ultrasonic flowmeter can be further suppressed.

As described above, since the flow rate meters 225, 227, and 229 are ultrasonic flow meters, the chemical solution supply tank 250 including the same can be downsized compared to the prior art. Further, since the flow direction of the cleaning chemical solution passing through the flow meters 225, 227, and 229 is the vertical direction, the chemical solution supply tank 250 including the flow rate tables 225, 227, and 229 can be disposed in the cleaning device 200. The position shown in 5. Further, the position of the chemical solution supply tank 250 is lower than the respective positions of the nozzles 231a, 232a, 233a. Therefore, the size of the apparatus is not increased, and the flow rate measurement after suppressing the measurement error caused by the air bubbles can be performed.

The first to third embodiments of the present invention have been described above, but the embodiments of the invention described above are for facilitating understanding of the embodiments of the present invention, and do not limit the present invention. The present invention may be modified and improved without departing from the spirit and scope of the invention. In addition, in the range which can solve at least a part of the above-mentioned problem, or the at least some effect is acquired, it can arbitrarily combine or abbreviate each component of the patent application and the description in the specification.

Specifically, the respective features of the first to third embodiments may be replaced or combined. For example, when an ultrasonic flowmeter is used as the flowmeters of the CLCs 111, 121, and 131 (see FIG. 2) of the first embodiment, the positions of the CLCs 111, 121, and 131 can be set to be larger than the supply of the cleaning liquid. The position of the nozzle to the chemical cleaning unit 220 is low. In addition, the cleaning device 200 (see FIG. 6) of the third embodiment may be employed instead of the cleaning device 200 (see FIGS. 2 and 3) of the first embodiment or the second embodiment. In addition, for example, the chemical solution supply device 100 (see FIGS. 2 and 3) of the first embodiment or the second embodiment may be employed instead of the chemical solution supply device 100 (see FIG. 6) of the third embodiment.

<Fourth embodiment>

Next, a fourth embodiment of the present invention will be described with reference to the drawings. FIG. 7 is a schematic side view showing a chemical solution supply device included in the cleaning unit of the embodiment. The chemical solution supply device is configured to supply a chemical solution such as hydrofluoric acid or ammonia to a cleaning device for cleaning each portion of the CMP device. As shown in FIG. 7 , the medical solution supply device 100 of the present embodiment has a housing 10 and a plurality of chemical liquid dilution tanks 150 or 160, and the plurality of chemical liquid dilution tanks 150 or 160 are treated with DIW (dilution water). The solution is diluted and used to supply the diluted drug solution (diluted solution). In the illustrated example, four chemical solution dilution tanks 150 or 160 are provided in the medical solution supply device 100, but this is an example. The number of the chemical solution dilution tanks 150 or 160 may be appropriately changed depending on the specifications of the cleaning device. As shown in the figure, the chemical solution dilution tank 150 or 160 is housed in the casing 101.

The chemical solution dilution tank 150 or 160 is configured to mix the DIW from the DIW supply source 10 to be described later with the chemical liquid from the chemical supply source 20 or the chemical supply source 30, and supply the diluted chemical solution to the cleaning device 200 ( Refer to Figure 8).

Although not shown, the chemical supply device 100 has a pipe, a valve, a pressure gauge, and the like for transporting DIW or chemical liquid. This is explained in detail in FIG.

Fig. 8 is a schematic view of a washing unit according to an embodiment of the present invention. As shown in the figure, the cleaning unit includes: a chemical solution supply device 100 (cleaning solution supply device) shown in FIG. 7; and a cleaning device 200 (substrate cleaning device) for utilizing the drug solution supply device 100. The supplied cleaning liquid is used to clean each part of the substrate and the CMP apparatus.

The chemical solution supply device 100 is configured to be in fluid communication with the DIW supply source 10 for supplying DIW via a pipe, and is in fluid communication with, for example, a chemical supply source 20 that supplies a chemical liquid such as hydrofluoric acid or ammonia, and is used for supply. The same chemical liquid supply source 30 is in fluid communication. Further, the chemical solution supply device 100 is configured to be in fluid communication with the cleaning device 200. Specifically, the chemical solution supply device 100 is configured to be in fluid communication with the cleaning device 200 in such a manner that the DIW and the diluted chemical solution can be supplied to the cleaning device 200.

The cleaning device 200 includes a DIW cleaning unit 210 that cleans each part of the CMP apparatus, which is a cleaning target, such as a semiconductor substrate polished by the CMP apparatus, by the DIW; the first chemical liquid cleaning unit 220 and the second In the chemical liquid cleaning unit 240, the first chemical liquid cleaning unit 220 and the second chemical liquid cleaning unit 240 clean the object to be cleaned, such as a semiconductor substrate polished by the CMP apparatus, with the diluted chemical solution (cleaning liquid). The DIW cleaning unit 210 is, for example, an ultrasonic water cleaning unit or Other DIW cleaning units and the like. The first chemical liquid cleaning unit 220 is constituted by, for example, a roll type cleaning unit, and the second chemical liquid cleaning unit 240 is constituted by, for example, a pen type cleaning unit.

The chemical solution supply device 100 includes a first chemical solution dilution tank 150 that dilutes the chemical solution with DIW (dilution water) and supplies the diluted chemical solution (diluted chemical solution) to the chemical solution dilution tank 150. a first chemical liquid cleaning unit 220 of the cleaning device 200; and a second chemical liquid dilution tank 160 for diluting the chemical liquid with DIW (dilution water) and for supplying the diluted chemical liquid The second chemical liquid cleaning unit 240 of the cleaning device 200 is reached.

The first chemical liquid dilution tank 150 has an in-line mixer 115 (mixing unit) that mixes the chemical liquid and the DIW to generate a cleaning chemical liquid, and adjusts the flow rate of the DIW supplied from the DIW supply source 10 to the in-line mixer 115. DIWCLC (Closed Loop Controller) 111a (first dilution water flow control unit) and DIWCLC 111b (second dilution water flow rate control unit); and medicine supplied to the in-line mixer 115 from the chemical solution supply source 20 The chemical liquid CLC113a (first chemical liquid flow control unit) and the chemical liquid CLC113b (second chemical liquid flow control unit) for adjusting the flow rate of the liquid. The in-line mixer 115 is configured to supply the generated cleaning chemical solution to the first chemical liquid cleaning unit 220.

The first chemical liquid dilution tank 150 further has two DIW supply valves 112a and 112b for supplying the dilution DIW from the DIW supply source 10 to the in-line mixer 115, respectively. The DIWCLCs 111a and 111b measure the flow rate of the DIW flowing through the DIWCLCs 111a and 111b, respectively, and adjust the opening degree of the internal control valve based on the measurement result (feedback control) so that the flow rate of the DIW flowing in the DIWCLCs 111a and 111b becomes Expected traffic.

The first chemical liquid dilution tank 150 further has chemical liquid supply valves 114a and 114b for supplying the chemical liquid from the chemical liquid supply source 20 to the in-line mixer 115, respectively. The chemical liquids CLC113a and 113b measure the flow rate of the chemical liquid flowing through the chemical liquids CLC113a and 113b, respectively. The opening degree of the internal control valve is adjusted (feedback control) based on the measurement result so that the flow rate of the chemical liquid flowing through the chemical liquids CLC 113a and 113b becomes a desired flow rate.

In addition, the first chemical liquid dilution tank 150 is provided in the piping 91a that connects the chemical liquid supply source 20 and the chemical liquid CLC 113a, and has a chemical liquid inlet valve 51a that supplies the chemical liquid to the piping 91a, and a fluid in the piping 91a. The pressure gauge 52a whose pressure is measured. Similarly, the first chemical liquid dilution tank 150 is provided in the piping 91b that connects the chemical liquid supply source 20 and the chemical liquid CLC 113b, and has a chemical liquid inlet valve 51b that supplies the chemical liquid to the piping 91b, and a fluid in the piping 91b. The pressure gauge 52b is measured by pressure. The chemical liquid inlet valves 51a and 51b are controlled to open and close by, for example, a control device (not shown).

The second chemical liquid dilution tank 160 has a structure similar to that of the first chemical liquid dilution tank 150. In other words, the second chemical liquid dilution tank 160 has an in-line mixer 116 (mixing unit) that mixes the chemical liquid and the DIW to generate a cleaning chemical liquid, and a flow rate of the DIW supplied from the DIW supply source 10 to the in-line mixer 116. Two DIWCLCs (Closed Loop Controllers) 121a and 121b that perform adjustment, and two chemical liquids CLC 123a and 123b that adjust the flow rate of the chemical liquid supplied from the chemical solution supply source 30 to the in-line mixer 116. The in-line mixer 116 is configured to supply the generated cleaning chemical solution to the second chemical liquid cleaning unit 240.

The second chemical liquid dilution tank 160 further has two DIW supply valves 122a, 122b for supplying the dilution DIW from the DIW supply source 10 to the in-line mixer 116, respectively. The DIWCLCs 121a and 121b measure the flow rate of the DIW flowing through the DIWCLCs 121a and 121b, respectively, and adjust the opening degree of the internal control valve based on the measurement result (feedback control) so that the flow rate of the DIW flowing in the DIWCLCs 121a and 121b becomes Expected traffic.

The second chemical liquid dilution tank 160 further has a chemical liquid supply valve 124a, 124b for supplying the chemical liquid The supply valves 124a, 124b are used to supply the chemical liquid from the chemical supply source 30 to the in-line mixer 116, respectively. The chemical liquids CLC123a and 123b measure the flow rate of the chemical liquid flowing through the chemical liquids CLC123a and 123b, respectively, and adjust the opening degree of the internal control valve (feedback control) based on the measurement structure so as to be in the chemical liquid CLC123a, 123. The flow rate of the flowing chemical liquid becomes the desired flow rate.

In addition, the second chemical liquid dilution tank 160 is provided in the piping 92a that connects the chemical liquid supply source 30 and the chemical liquid CLC123a, and has a chemical liquid inlet valve 61a that supplies the chemical liquid to the piping 92a, and a fluid in the piping 92a. The pressure gauge 62a is measured by pressure. Similarly, the second chemical liquid dilution tank 160 is provided in the piping 92b that connects the chemical liquid supply source 30 and the chemical liquid CLC 123b, and has a chemical liquid inlet valve 61b that supplies the chemical liquid to the piping 92b, and a fluid in the piping 92b. The pressure gauge 62b is measured by pressure. The chemical solution inlet valves 61a and 61b are controlled to open and close by, for example, a control device (not shown).

The chemical solution supply device 100 includes a DIW supply pipe 81. One end of the DIW supply pipe 81 is connected to the DIW supply source 10, and the other end is connected to the DIW cleaning unit 210 of the cleaning device 200. The DIW supply pipe 81 is provided with a DIW supply valve 86 for supplying DIW from the DIW supply source 10 to the DIW supply pipe 81, and a DIW pressure regulator 87 for the pair The DIW is adjusted from the DIW supply pipe 81 to the supply pressure of the DIW cleaning unit 210, and the DIW pressure gauge 88 measures the pressure of the DIW passing through the inside of the DIW supply pipe 81.

A DIW branch pipe 82a is connected between the DIW supply valve 86 and the DIW pressure regulator 87 on the DIW supply pipe 81, and one end of the DIW branch pipe 82a is connected to the DIWCLC 111a. A DIW pipe 83a that is in fluid communication with the in-line mixer 115 is connected to the DIWCLC 111a. The DIW supply valve 112a is provided on the DIW pipe 83a, and is opened and closed when the DIW is supplied to the in-line mixer 115. Similarly, the DIW supply valve 86 and DIW on the DIW supply pipe 81 A DIW branch pipe 82b is connected between the pressure regulators 87, and one end of the DIW branch pipe 82b is connected to the DIWCLC 111b. A DIW pipe 83b that is in fluid communication with the in-line mixer 115 is connected to the DIWCLC 111b. The DIW supply valve 112b is provided on the DIW pipe 83b, and is opened and closed when the DIW is supplied to the in-line mixer 115. The DIWCLC 111b and the DIW supply valve 112b are disposed between the DIW supply source 10 and the in-line mixer 115 in a state of being aligned with respect to the DIWCLC 111a and the DIW supply valve 112a.

A chemical liquid pipe 85a that is in fluid communication with the in-line mixer 115 is connected to the chemical liquid CLC 113a of the first chemical liquid dilution tank 150. The chemical liquid supply valve 114a is provided in the chemical liquid pipe 85a, and supplies the chemical liquid to the chemical liquid pipe 85a. A cleaning chemical pipe 96 is connected to the in-line mixer 115, and one end of the cleaning chemical pipe 96 is connected to the cleaning device 200. A chemical liquid pipe 85b that is in fluid communication with the in-line type and 115 is connected to the chemical liquid CLC 113b of the first chemical liquid dilution tank 150. The chemical liquid supply valve 114b is provided in the chemical liquid pipe 85b, and supplies the chemical liquid to the chemical liquid pipe 85b. The chemical liquid inlet valve 51b, the pressure gauge 52b, the chemical liquid CLC 113b, and the chemical liquid supply valve 114b are disposed in a state in which the chemical liquid inlet valve 51a, the pressure gauge 52a, the chemical liquid CLC 113a, and the chemical liquid supply valve 114a are in a parallel relationship. The chemical supply source 20 is interposed between the in-line mixer 115.

Further, a DIW branch pipe 75a is connected between the DIW supply valve 86 and the DIW pressure regulator 87 on the DIW supply pipe 81, and one end of the DIW branch pipe 75a is connected to the DIWCLC 121a. A DIW pipe 76a in fluid communication with the in-line mixer 116 is connected to the DIWCLC 121a. The DIW supply valve 122a is provided on the DIW pipe 76a, and is opened and closed when the DIW is supplied to the in-line mixer 116. Similarly, a DIW branch pipe 75b is connected between the DIW supply valve 86 and the DIW pressure regulator 87 on the DIW supply pipe 81, and one end of the DIW branch pipe 75b is connected to the DIWCLC 121b. Connected to the inline mixer 116 in fluid communication on the DIWCLC 121b DIW piping 76b. The DIW supply valve 122b is provided on the DIW pipe 76b, and is opened and closed when the DIW is supplied to the in-line mixer 116. The DIWCLC 121b and the DIW supply valve 122b are disposed between the DIW supply source 10 and the in-line mixer 116 in a state of being aligned with the DIWCLC 121a and the DIW supply valve 122a.

The chemical liquid pipe 74a that is in fluid communication with the in-line mixer 116 is connected to the chemical liquid CLC123a of the second chemical liquid dilution tank 160. The chemical liquid supply valve 124a is provided in the chemical liquid pipe 74a, and supplies the chemical liquid to the chemical liquid pipe 74a. The cleaning chemical liquid pipe 97 is connected to the in-line mixer 116, and one end of the cleaning chemical liquid pipe 97 is connected to the cleaning device 200. The chemical liquid pipe 74b that is in fluid communication with the in-line mixer 116 is connected to the chemical liquid CLC123b of the second chemical liquid dilution tank 160. The chemical liquid supply valve 124b is provided in the chemical liquid pipe 74b, and supplies the chemical liquid to the chemical liquid pipe 74b. The chemical liquid inlet valve 61b, the pressure gauge 62b, the chemical liquid CLC123b, and the chemical liquid supply valve 124b are disposed in a state of being aligned with each other with respect to the chemical liquid inlet valve 61a, the pressure gauge 62a, the chemical liquid CLC123a, and the chemical liquid supply valve 124a. The chemical supply source 30 is between the in-line mixer 116.

The DIWCLCs 111a and 111b and the chemical solutions CLC 113a and 113b of the first chemical liquid dilution tank 150 and the DIWCLCs 121a and 121b and the chemical liquids CLC 123a and 123b of the second chemical liquid dilution tank 160 are configured to receive a specification from a control device (not shown). The signal of the flow value. The opening degree of the internal control valve of the DIWCLCs 111a and 111b and the chemical liquids CLC 113a and 113b and the DIWCLC 121a and 121b and the chemical liquids CLC 123a and 123b is controlled based on the flow rate value.

The first chemical liquid cleaning unit 220 of the cleaning device 200 includes an upper surface cleaning unit 222 (cleaning unit) that supplies the cleaning chemical solution to the upper surface of the polished substrate to be cleaned; the lower surface cleaning unit a portion 223 (cleaning portion) that supplies the cleaning chemical solution to the lower surface of the polished substrate to be cleaned, and a waiting portion 221, the waiting portion 221 The substrate to be cleaned by the upper surface cleaning unit 222 and the lower surface cleaning unit 223 is arranged. The upper surface cleaning unit 222 and the lower surface cleaning unit 223 function as a substrate cleaning unit that simultaneously cleans the upper surface and the lower surface of one substrate. The waiting portion 221 supplies the cleaning chemical solution to the waiting substrate to prevent oxidation of the waiting substrate.

The cleaning device 200 includes a cleaning chemical supply pipe 231 that fluidly connects the cleaning chemical pipe 96 and the waiting portion 221, and a cleaning chemical supply pipe 232 that causes the cleaning liquid to be cleaned. The piping 96 is in fluid communication with the upper surface cleaning unit 222, and the cleaning chemical supply piping 233 that fluidly connects the cleaning chemical liquid piping 96 and the lower surface cleaning unit 223.

The cleaning chemical supply pipe 231 is provided with a cleaning chemical supply valve 224 for supplying the cleaning chemical to the waiting portion 221, and a flow meter 225 for supplying the cleaning. The flow rate of the chemical solution is measured. The cleaning chemical supply pipe 232 is provided with a cleaning chemical supply valve 226 for supplying the cleaning chemical to the upper surface cleaning unit 222, and a flow rate table 227 for supplying the flow rate table 227. The flow rate of the cleaning solution is measured. The cleaning chemical supply pipe 233 is provided with a cleaning chemical supply valve 228 for supplying the cleaning chemical to the lower surface cleaning unit 223, and a flow rate table 229 for supplying the flow rate table 229. The flow rate of the cleaning solution is measured. The cleaning chemical supply valve 224, the cleaning chemical supply valve 226, and the cleaning chemical supply valve 228 are controlled to be opened and closed by, for example, a control device (not shown).

The second chemical liquid cleaning unit 240 of the cleaning device 200 includes an upper surface cleaning unit 242 (cleaning unit) that supplies the cleaning chemical solution to the upper surface of the polished substrate to be cleaned; Part 243 (cleaning unit), the lower surface cleaning unit 243 will clean the liquid medicine The lower surface of the substrate after the polishing is supplied to the substrate, and the waiting portion 241 is disposed to wait for the substrate to be cleaned by the upper surface cleaning portion 242 and the lower surface cleaning portion 243. The upper surface cleaning unit 242 and the lower surface cleaning unit 243 function as a substrate cleaning unit that simultaneously cleans the upper surface and the lower surface of one substrate.

The cleaning device 200 includes a cleaning chemical supply pipe 251 that fluidly connects the cleaning chemical pipe 97 and the waiting portion 241, and a cleaning chemical supply pipe 252 for cleaning the chemical liquid The piping 97 is in fluid communication with the upper surface cleaning unit 242, and the cleaning chemical supply piping 253 is provided to fluidly connect the cleaning chemical liquid piping 97 and the lower surface cleaning unit 243.

The cleaning chemical supply pipe 251 is provided with a cleaning chemical supply valve 244 for supplying the cleaning chemical to the waiting portion 241, and a flow rate table 245 for supplying the cleaning. The flow rate of the chemical solution is measured. The cleaning chemical supply pipe 252 is provided with a cleaning chemical supply valve 246 for supplying the cleaning chemical to the upper surface cleaning unit 242, and a flow rate table 247 for supplying the flow rate table 247. The flow rate of the cleaning solution is measured. The cleaning chemical supply pipe 253 is provided with a cleaning chemical supply valve 248 for supplying the cleaning chemical to the lower surface cleaning unit 243, and a flow rate table 249 for supplying the flow rate table 249. The flow rate of the cleaning solution is measured. The cleaning chemical supply valve 244, the cleaning chemical supply valve 246, and the cleaning chemical supply valve 248 are controlled to be opened and closed by, for example, a control device (not shown).

In the chemical solution supply device 100 of the present embodiment, in order to supply the chemical solution in a wide flow rate range, the flow rate range of the chemical solution controlled by the chemical liquid CLC 113a and the chemical liquid CLC 123a is different from the chemical liquid CLC 113b and the chemical liquid CLC 123b. The flow range of the controlled liquid. specific For example, the chemical liquid CLC 113a and the chemical liquid CLC 123a can control the flow rate of the chemical solution in the flow rate range (first range) of the lower flow rate, and the flow rate range of the chemical liquid CLC 113b and the chemical liquid CLC 123 b in the higher flow rate (second range) The flow rate of the chemical solution can be controlled, and the flow rate range controllable by the chemical liquid CLC113a and the chemical liquid CLC123a and the controllable flow range of the chemical liquid CLC113b and the chemical liquid CLC123b are partially overlapped.

In the chemical solution supply device 100 of the present embodiment, the flow rate controllable by the chemical liquid CLC113a and the chemical liquid CLC123a is 30 mL/min or more and 300 mL/min or less, and the flow rate range of the chemical liquid CLC113b and the chemical liquid CLC123b is 250 mL/ More than min, 2500mL / min or less. Therefore, the flow rate of the chemical solution supplied to the in-line mixer 115 by the chemical liquid CLC113a and the chemical liquid CLC113b is 30 mL or more and 2800 mL/min or less. Similarly, the flow rate of the chemical solution supplied to the in-line mixer 116 by the chemical liquid CLC123a and the chemical liquid CLC123b is 30 mL/min or more and 2800 mL/min or less.

Further, in the chemical solution supply device 100 of the present embodiment, in order to supply DIW in a wide flow rate range, the flow rate range of the DIW that can be controlled by the DIWCLC 111a and the DIWCLC 121a is different from the flow rate range of the DIW that can be controlled by the DIWCLC 111b and the DIWCLC 121b. Specifically, for example, DIWCLC 111a and DIWCLC 121a can control DIW flow rate in a lower flow rate range (third range), and DIWCLC 111b and DIWCLC 121b can control DIW flow rate in a higher flow rate range (fourth range), DIWCLC 111a and The controllable flow range of the DIWCLC121a overlaps with the controllable flow range of the DIWCLC111b and DIWCLC121b.

In the chemical solution supply device 100 of the present embodiment, the flow rate controllable by the DIWCLC 111a and the DIWCLC 121a is 200 mL/min or more and 2000 mL/min or less, and the flow rate range controllable by the DIWCLC 111b and the DIWCLC 121b is 400 mL/min or more. Below 4000mL/min. Therefore, the flow rate of the DIW supplied to the in-line mixer 115 by the DIWCLC 111a and the DIWCLC 111b can be 200 mL or more and 6000 mL/min or less. Similarly, the flow rate of the DIW supplied to the in-line mixer 116 by the DIWCLC 121a and the DIWCLC 121b can be 200 mL/min or more and 600 mL/min or less.

In the present embodiment, since the flow rate range of the chemical liquid is 30 mL/min or more and 2800 mL/min or less, and the flow rate range of the DIW is 200 mL/min or more and 6000 mL/min or less, the range of the dilution ratio of the chemical liquid and the DIW becomes 1:1 or more, 1:200 or less (medicine solution: DIW).

In the CLC of the chemical solution and the DIW, a differential pressure flowmeter (orifice flowmeter) is generally used. In the CLC using the orifice flowmeter, it is known that the smaller the flow rate of the control range, the smaller the diameter of the orifice, and therefore the pressure loss with respect to the flow rate is large, and on the other hand, the flow rate of the control range The smaller the control, the better the control accuracy. Also, it is known that the larger the flow rate of the control range, the larger the diameter of the small hole, and therefore, the pressure loss with respect to the flow rate is small, and on the other hand, the larger the flow rate of the control range, the worse the control precision.

Therefore, in the chemical solution supply device 100 of the present embodiment, when a chemical solution or DIW having a relatively low flow rate is supplied to the cleaning device 200, the chemical liquid CLC113a and the chemical liquid CLC123a which can be controlled at a flow rate range of a lower flow rate or DIWCLC111a and DIWCLC121a. Thereby, a low-flow chemical liquid or DIW can be supplied with high control precision. On the other hand, when a higher-flow chemical liquid or DIW is supplied to the cleaning device 200, the chemical liquid CLC113b and the chemical liquid CLC123b or DIWCLC111b and DIWCLC121b which can be controlled at a flow rate range of a higher flow rate are used. Thereby, the pressure loss can be reduced to supply a high-flow chemical solution or DIW. Further, in this case, the control accuracy is slightly deteriorated, but since the supplied chemical liquid or DIW is a high flow rate, the influence is small compared to the case of a low flow rate.

The cleaning chemical liquid supplied from the in-line mixers 115 and 116 is used for cleaning the substrate not only in the upper surface cleaning units 222 and 242 and the lower surface cleaning units 223 and 243 but also in the waiting portions 221 and 241. The substrate (the next cleaned substrate) is used to prevent oxidation of the substrate. In the chemical solution supply device 100 of the present embodiment, the amount of processing of the cleaning process is increased by waiting for the cleaning and cleaning of the substrate at the same time. In the case where the cleaning and cleaning of the substrate are simultaneously performed, since the cleaning chemical liquid is used in each process, a high-flow chemical liquid and DIW are required. Therefore, in the present embodiment, as described above, the chemical liquid or the DIW can be supplied to the cleaning device 200 by using two CLCs whose control flow rate ranges are partially overlapped. Here, the controllable traffic range is that the flow ranges of a part of the overlapping two CLCs are, one is a lower flow and the other is a higher flow. Therefore, by using the CLC of the flow rate range of low flow rate, it is possible to handle the supply of the chemical solution or DIW of a low flow rate. In addition, by using a CLC with a high flow rate range, it is possible to handle the supply of a high-flow chemical solution or DIW. Further, since the flow rate after the flow rate controlled by the two CLCs can be supplied to the cleaning device 200 by using the two CLCs at the same time, it is possible to cope with the waiting for the cleaning and cleaning of the substrate at the same time. In particular, the treatment of a high-flow cleaning solution is required.

Next, the DIW of the cleaning unit shown in Fig. 8 and the supply process of the chemical liquid will be described. Fig. 9 is a flowchart showing a DIW and a supply process of a chemical liquid in the cleaning unit shown in Fig. 8; In addition, the DIW and the supply processing of the chemical liquid supplied from the second chemical liquid dilution tank 160 to the second chemical liquid cleaning unit 240 are supplied to the first chemical liquid from the first chemical liquid dilution tank 150. Since the DIW of the cleaning unit 220 and the supply process of the chemical solution are the same, the description thereof is omitted here.

When the chemical liquid is supplied to the first chemical liquid cleaning unit 220 of the cleaning device 200 shown in FIG. 8, first, the chemical liquid inlet valve 51a and the chemical liquid inlet valve 51b of the first chemical liquid dilution tank 150 are opened. The chemical liquid CLC 113a and the chemical liquid CLC 113b of the first chemical solution dilution tank 150 are respectively adjusted to adjust the flow rate of the chemical liquid, and the chemical liquid having a predetermined flow rate is supplied from the chemical liquid supply source 20 to the in-line mixer 115. As shown in FIG. 9, in the present embodiment, in step 1, the chemical liquid CLC 113a and the chemical liquid CLC 113b are supplied with a chemical liquid having a flow rate of 400 mL/min.

Similarly, the DIW supply valve 86 on the DIW supply pipe 81 is opened, and the DIW is supplied from the DIW supply source 10 to the DIWCLC 111a and the DIWCLC 111b of the first chemical solution dilution tank 150. The DIWCLC111a and DIWCLC111b adjust the flow of the DIW. By opening the DIW supply valves 112a and 112b, the DIW of the predetermined flow rate is supplied from the DIWCLC 111a and the DIWCLC 111b to the in-line mixer 115. As shown in FIG. 9, in the present embodiment, in step 1, DIWCLC 111a and DIWCLC 111b supply DIW at a flow rate of 2100 mL/min.

The chemical supplied to the in-line mixer 115 is mixed with DIW. The cleaning chemical solution thus generated is supplied to the first chemical liquid cleaning unit 220 via the cleaning chemical liquid pipe 96.

In order to supply the cleaning liquid to the upper surface cleaning unit 222 and the lower surface cleaning unit 223 in the first chemical liquid cleaning unit 220, the cleaning chemical supply valve 226 and the cleaning chemical supply valve 228 are opened. As a result, as shown in step 1 of FIG. 9, the upper surface cleaning unit 222 and the lower surface cleaning unit 223 supply the cleaning chemical solution to the substrate, and clean the upper surface and the lower surface of the substrate.

In order to prevent the other substrate waiting for cleaning in the waiting portion 221 from being oxidized, the first chemical liquid cleaning unit 220 must supply the cleaning liquid to the waiting portion 221. Therefore, the cleaning chemical supply valve 224 is opened. Thereby, as shown in step 1 of FIG. 9, the waiting portion 221 supplies the cleaning chemical solution to the substrate. Since the cleaning liquid is supplied to the substrate, the surface of the substrate is wetted without coming into contact with the air, and therefore oxidation of the surface of the substrate can be prevented.

As shown in step 2 of FIG. 9 , the upper surface cleaning unit 222 and the lower surface cleaning unit 223 Next, in step 1, the cleaning solution is supplied to the substrate. On the other hand, in the waiting portion 221, when the surface of the substrate being waited for is sufficiently wetted, as shown in step 2, the supply of the cleaning chemical liquid is stopped. In other words, the cleaning chemical supply valve 224 of the first chemical liquid cleaning unit 220 is closed.

At the same time, in step 2, the flow rate of the chemical solution is adjusted by the chemical liquid CLC 113a and the chemical liquid CLC 113b of the first chemical solution dilution tank 150, respectively. That is, the flow rate of the chemical liquid is reduced in accordance with the amount of the cleaning chemical supplied from the stop waiting unit 221. As shown in Fig. 9, in the present embodiment, in step 2, the chemical liquid CLC 113a and the chemical liquid CLC 113b are supplied with a chemical solution having a flow rate of 50 mL/min.

Similarly, in step 2, the flow rates of the DIW are respectively adjusted by the DIWCLC 111a and the DIWCLC 111b of the first chemical solution dilution tank 150. That is, the flow rate of the DIW is reduced in accordance with the amount of the cleaning chemical supplied from the stop waiting portion 221. As shown in FIG. 9, in the present embodiment, in step 2, DIWCLC 111a and DIWCLC 111b supply DIW at a flow rate of 1,350 mL/min.

In the steps 3 and 4 shown in FIG. 9, the substrate transfer operation after the cleaning, the DIW rinse operation of the substrate after the cleaning, and the like are performed.

Next, in steps 5 to 8, the same steps as in steps 1 to 4 are performed. Specifically, the upper substrate cleaning unit 222 and the lower surface cleaning unit 223 clean the other substrate, and the other substrate to be cleaned next waits in the waiting portion 221 (step 5). The cleaning chemical in the supply waiting portion 221 is stopped, and the flow rate of the DIW and the chemical liquid is reduced (step 6). The cleaned substrate is transported, and a DIW flushing operation or the like is performed (steps 7 and 8).

As described above, the cleaning unit of the present embodiment includes the DIWCLC 111a and the DIWCLC 111b in which the controllable flow rate ranges partially overlap each other, and the chemical liquid CLC 113a and the chemical liquid CLC 113b in which the controllable flow rate ranges partially overlap each other. The controllable flow range is made into a wide range. Therefore, the upper surface is cleaned with the substrate cleaned The washing unit 222 and the lower surface cleaning unit 223 and the cleaning device 200 that waits for the waiting portion 221 for the substrate to be cleaned in advance can simultaneously perform the following operations on the substrate by the upper surface cleaning unit 222 and the lower surface cleaning unit 223. The cleaning and the supply of the cleaning chemical solution by the waiting portion 221 to the waiting substrate can increase the processing amount of the cleaning process as compared with the prior art. Further, with the cleaning unit of the present embodiment, it is also possible to perform processing with a low flow rate.

Further, the chemical solution supply device 100 of the cleaning unit of the present embodiment includes the first chemical liquid dilution tank 150 and the second chemical liquid dilution tank 160. However, depending on the configuration of the cleaning device 200, it may have only the first The chemical solution dilution tank 150 may further have an additional chemical solution dilution tank.

The embodiments of the present invention have been described above, but the embodiments of the invention described above are intended to facilitate the understanding of the embodiments of the invention and are not intended to limit the invention. The present invention may be modified and improved without departing from the spirit and scope of the invention. In addition, in the range which can solve at least a part of the above-mentioned problem, or the at least some effect is acquired, it can arbitrarily combine or abbreviate each component of the patent application and the description in the specification.

10‧‧‧DIW supply source

20‧‧‧1st liquid supply source

30‧‧‧Second liquid supply source

50‧‧‧medical solution sharing box

51‧‧‧1st liquid inlet valve

52‧‧‧ pressure gauge

60‧‧‧medical solution sharing box

61‧‧‧2nd liquid inlet valve

62‧‧‧ pressure gauge

72‧‧‧1st inline mixer

73‧‧‧2nd inline mixer

81‧‧‧DIW supply piping

82‧‧‧DIW divergent piping

83‧‧‧1st DIW piping

84‧‧‧2nd DIW piping

86‧‧‧DIW supply valve 86

87‧‧‧DIW pressure regulator

88‧‧‧DIW pressure gauge

91‧‧‧Pipe

92‧‧‧Pipe

93‧‧‧1st liquid chemical piping

94‧‧‧2nd liquid chemical piping

96‧‧‧1st cleaning liquid pipe

97‧‧‧Second cleaning liquid piping

100‧‧‧medicine supply device

110‧‧‧DIWCLC box

111‧‧‧CLC

112‧‧‧1st DIW supply valve

113‧‧‧2nd DIW supply valve

120‧‧‧1st liquid CLC box

121‧‧‧CLC

122‧‧‧1st liquid supply valve

130‧‧‧2nd liquid CLC box

131‧‧‧CLC

132‧‧‧2nd liquid supply valve

200‧‧‧cleaning device

210‧‧‧DIW Cleaning Department 220

220‧‧‧Drug cleaning department

230‧‧‧cleaning tank

Claims (15)

A cleaning chemical supply device for supplying a cleaning chemical solution to a substrate cleaning device, the cleaning chemical supply device comprising: a first mixing portion for mixing the first chemical liquid and the dilution water The obtained first cleaning chemical solution is supplied to the substrate cleaning device, and the second mixing portion is for supplying the second cleaning chemical liquid obtained by mixing the second chemical liquid and the dilution water to the second cleaning solution. The substrate cleaning device includes: a first chemical solution control unit configured to control a flow rate of the first chemical liquid supplied to the first mixing unit; and a second chemical liquid control unit; The second chemical liquid control unit controls a flow rate of the second chemical liquid supplied to the second mixing unit, and a dilution water control unit that supplies the first mixing unit to the first mixing unit. Or the flow rate of the dilution water in the second mixing unit; and a dilution water supply switching unit that switches the supply destination of the dilution water from the first mixing unit to the Switching to the second mixing unit or switching from the second mixing unit to the first mixing unit . The cleaning chemical supply device according to the first aspect of the invention, wherein the first chemical liquid control unit is configured to stop the supply of the second cleaning chemical when the second cleaning chemical is supplied to the substrate cleaning device In the first chemical liquid, the second chemical liquid control unit is configured to stop supplying the second chemical liquid while the first cleaning chemical liquid is supplied to the substrate cleaning device. The cleaning liquid supply device according to claim 1 or 2, wherein the dilution water is supplied The switching unit is configured to supply the dilution water to the first mixing unit while the first chemical liquid control unit supplies the first chemical liquid to the first mixing unit, and the second mixing unit is configured to supply the first mixing unit to the first mixing unit. The chemical solution control unit supplies the diluted water to the second mixing unit while the second chemical solution is supplied to the second mixing unit. The cleaning chemical supply device according to claim 1 or 2, further comprising: a first chemical liquid supply source, wherein the first chemical liquid supply source supplies the first chemical liquid to the first chemical liquid control a second chemical liquid supply source, the second chemical liquid supply source supplies the second chemical liquid to the second chemical liquid control unit; the first chemical liquid inlet valve, the first chemical liquid inlet valve is provided at the connection a first chemical liquid supply source and a conduit of the first chemical liquid control unit; and a second chemical liquid inlet valve, wherein the second chemical liquid inlet valve is connected to the second chemical liquid supply source and the first 2 on the pipeline of the chemical control unit. The cleaning chemical supply device according to claim 1 or 2, wherein one of the first chemical liquid and the second chemical liquid is an alkaline chemical liquid, and the other is an acidic chemical liquid. . A cleaning chemical supply method for supplying a cleaning chemical solution to a substrate cleaning device, the cleaning chemical supply method having the following steps: a step of controlling a flow rate of the first chemical liquid; and a process of controlling a flow rate of the dilution water a step of supplying the first chemical solution and the dilution water to the first mixing unit and mixing the first chemical liquid and the dilution water; and a first supply step of the first supply step Mixing the first chemical solution with the dilution water The first cleaning chemical solution obtained is supplied to the substrate cleaning device; a step of controlling the flow rate of the second chemical liquid; and the supply destination of the dilution water is switched from the first mixing unit to the second mixing unit a step of supplying the second chemical liquid and the dilution water to the second mixing unit, mixing the second chemical liquid and the dilution water, and a second supply step (2) The supply step is to supply the second cleaning solution obtained by mixing the second chemical solution and the dilution water to the substrate cleaning device. The cleaning solution supply method according to claim 6, wherein the first supply step has a step of supplying the second cleaning liquid to the substrate cleaning in the second supply step The supply of the first cleaning chemical liquid is stopped during the period of the apparatus, and the second supply step has a step of stopping the supply of the first cleaning chemical liquid to the cleaning device in the first supply step. The second cleaning liquid is supplied. The method for supplying a cleaning solution according to the sixth or seventh aspect, wherein one of the first chemical solution and the second chemical solution is an alkaline chemical solution, and the other is an acidic chemical solution. . A cleaning unit comprising: a substrate cleaning device for cleaning a substrate; and a cleaning chemical supply device for supplying a cleaning chemical to the substrate cleaning device, wherein the substrate cleaning device of the cleaning unit has: supplying a cleaning solution a nozzle to the substrate; and a first ultrasonic flowmeter that measures a flow rate of the cleaning chemical supplied to the substrate, wherein the first ultrasonic flowmeter is disposed at a position lower than a position of the nozzle. The cleaning unit according to claim 9, wherein the first ultrasonic flowmeter is configured such that a flow direction of the cleaning chemical solution by the first ultrasonic flowmeter faces a vertical direction. The cleaning unit according to claim 9 or 10, wherein the cleaning chemical supply device has a mixing portion for supplying a cleaning liquid obtained by mixing a chemical liquid and a dilution water. a liquid crystal flow rate control unit that controls a flow rate of the chemical liquid, and supplies the chemical liquid to the mixing unit; and a dilution water flow rate control unit to the substrate cleaning device; The dilution water flow rate control unit controls the flow rate of the dilution water, and supplies the dilution water to the mixing unit, wherein the chemical liquid flow rate control unit and the dilution water flow rate control unit each have a second ultrasonic flow meter And the third ultrasonic flowmeter, wherein the second ultrasonic flowmeter and the third ultrasonic flowmeter are disposed at a position lower than a position of the nozzle. The cleaning unit according to claim 11, wherein the second ultrasonic flowmeter and the third ultrasonic flowmeter are disposed such that flow direction and passage of dilution water flowing through the second ultrasonic flowmeter The flow direction of the chemical liquid of the third ultrasonic flowmeter faces the vertical direction. A cleaning unit comprising: a substrate cleaning device for cleaning a substrate; and a cleaning chemical supply device for supplying a cleaning chemical to the substrate cleaning device, the substrate cleaning device of the cleaning unit having: cleaning the substrate a cleaning unit; and a waiting portion configured to wait for a substrate to be cleaned by the cleaning unit, and The cleaning chemical solution is supplied to the waiting substrate, and the cleaning chemical supply device includes a mixing unit for supplying the cleaning chemical liquid obtained by mixing the chemical liquid and the dilution water to the cleaning unit and the cleaning unit. a chemical solution flow rate control unit that controls a flow rate of the chemical liquid, supplies the chemical liquid to the mixing unit, and a dilution water flow rate control unit, the dilution water flow rate The control unit controls the flow rate of the dilution water, and supplies the dilution water to the mixing unit, wherein the chemical liquid flow control unit includes a first chemical liquid flow control unit and a second chemical liquid flow control unit, and The chemical liquid flow rate control unit is configured to supply the chemical liquid whose flow rate is controlled by the first chemical liquid flow rate control unit and/or the second chemical liquid flow control unit to the mixing unit, the first The chemical liquid flow rate control unit is configured to be capable of controlling the flow rate in the first range, and the second chemical liquid flow rate control unit is configured to be capable of controlling the flow rate in a second range overlapping the first range, the dilution The water flow control unit has the first dilution The flow rate control unit and the second dilution water flow rate control unit are configured to control the flow rate by the first dilution water flow rate control unit and/or the second dilution water flow rate control unit. The dilution water is supplied to the mixing unit, and the first dilution water flow rate control unit is configured to control the flow rate in the third range, and the second dilution water flow rate control unit is configured to be partially and third The fourth range of overlapping ranges controls flow. The cleaning unit of claim 13, wherein the cleaning unit is simultaneously performed The substrate is cleaned and a cleaning solution is supplied to the substrate in the waiting portion. The cleaning unit according to claim 13 or 14, wherein the cleaning unit has: an upper surface cleaning unit configured to supply a cleaning chemical solution to an upper surface of the substrate; and a lower surface In the cleaning unit, the lower surface cleaning unit is configured to supply the cleaning chemical solution to the lower surface of the substrate.