TW201601903A - 積層體及其製造方法 - Google Patents
積層體及其製造方法 Download PDFInfo
- Publication number
- TW201601903A TW201601903A TW104108932A TW104108932A TW201601903A TW 201601903 A TW201601903 A TW 201601903A TW 104108932 A TW104108932 A TW 104108932A TW 104108932 A TW104108932 A TW 104108932A TW 201601903 A TW201601903 A TW 201601903A
- Authority
- TW
- Taiwan
- Prior art keywords
- mass
- nitride
- copper alloy
- concentration
- ceramic substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 10
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 155
- 239000000758 substrate Substances 0.000 claims abstract description 144
- 150000004767 nitrides Chemical class 0.000 claims abstract description 127
- 239000000919 ceramic Substances 0.000 claims abstract description 120
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 44
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 30
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 30
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 29
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 23
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- 229910052738 indium Inorganic materials 0.000 claims abstract description 18
- 229910052796 boron Inorganic materials 0.000 claims abstract description 17
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 17
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 17
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 16
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 15
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 15
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 15
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 15
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 15
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 15
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 15
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 15
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 15
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 15
- 229910052718 tin Inorganic materials 0.000 claims abstract description 15
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 15
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 14
- 229910052716 thallium Inorganic materials 0.000 claims abstract description 14
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 13
- 229910052788 barium Inorganic materials 0.000 claims abstract description 10
- 239000010936 titanium Substances 0.000 claims description 63
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- 239000011888 foil Substances 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 16
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 13
- 229910052582 BN Inorganic materials 0.000 claims description 11
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 10
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 239000012300 argon atmosphere Substances 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 52
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 34
- 229910052802 copper Inorganic materials 0.000 description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 25
- 239000011572 manganese Substances 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 18
- 238000007747 plating Methods 0.000 description 16
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- -1 Si 3 N 4 Chemical compound 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052789 astatine Inorganic materials 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 239000011195 cermet Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007719 peel strength test Methods 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018565 CuAl Inorganic materials 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002169 ethanolamines Chemical class 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 210000004180 plasmocyte Anatomy 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- MNWBNISUBARLIT-UHFFFAOYSA-N sodium cyanide Chemical compound [Na+].N#[C-] MNWBNISUBARLIT-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/02—Alloys based on copper with tin as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/04—Alloys based on copper with zinc as the next major constituent
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
- Ceramic Products (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014058384 | 2014-03-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201601903A true TW201601903A (zh) | 2016-01-16 |
Family
ID=54144800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104108932A TW201601903A (zh) | 2014-03-20 | 2015-03-20 | 積層體及其製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP6038389B2 (fr) |
| TW (1) | TW201601903A (fr) |
| WO (1) | WO2015141839A1 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107868656A (zh) * | 2016-09-26 | 2018-04-03 | 罗宇晴 | 导热铝料的组成物及其制造方法 |
| CN110382445A (zh) * | 2017-02-28 | 2019-10-25 | 三菱综合材料株式会社 | 铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法 |
| CN115124362A (zh) * | 2022-06-20 | 2022-09-30 | 昆明冶金研究院有限公司北京分公司 | 陶瓷覆铜板及其制备方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201601903A (zh) * | 2014-03-20 | 2016-01-16 | Jx Nippon Mining & Metals Corp | 積層體及其製造方法 |
| CN105624454B (zh) * | 2016-02-02 | 2017-11-24 | 亳州沃野知识产权服务有限公司 | 一种高强度高过滤通量合金构件的制备方法 |
| TWI746807B (zh) * | 2017-02-28 | 2021-11-21 | 日商三菱綜合材料股份有限公司 | 銅／陶瓷接合體，絕緣電路基板，及銅／陶瓷接合體的製造方法，絕緣電路基板的製造方法 |
| US11229209B2 (en) * | 2018-06-27 | 2022-01-25 | Vapor Technologies, Inc. | Copper-based antimicrobial PVD coatings |
| JP6526888B1 (ja) * | 2018-08-01 | 2019-06-05 | Ｊｘ金属株式会社 | セラミックス層と銅粉ペースト焼結体の積層体 |
| WO2020044594A1 (fr) * | 2018-08-28 | 2020-03-05 | 三菱マテリアル株式会社 | Corps assemblé en cuivre/céramique, carte de circuit imprimé isolée, procédé de production de corps assemblé en cuivre/céramique, et procédé de fabrication de carte de circuit imprimé isolée |
| US11638350B2 (en) | 2019-12-02 | 2023-04-25 | Mitsubishi Materials Corporation | Copper/ceramic bonded body, insulating circuit board, method for producing copper/ceramic bonded body, and method for producing insulating circuit board |
| CN112359247B (zh) * | 2020-11-16 | 2021-11-09 | 福州大学 | 一种Cu-Hf-Si-Ni-Ce铜合金材料及其制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2563809B2 (ja) * | 1987-09-28 | 1996-12-18 | 京セラ株式会社 | 半導体用窒化アルミニウム基板 |
| JPH04163946A (ja) * | 1990-10-29 | 1992-06-09 | Toshiba Corp | セラミック回路基板 |
| JPH05171317A (ja) * | 1991-12-17 | 1993-07-09 | Tokin Corp | ＡｌＮ基板メタライズ材料 |
| JPH10247698A (ja) * | 1997-03-04 | 1998-09-14 | Sumitomo Kinzoku Electro Device:Kk | 絶縁性放熱板 |
| JP4237459B2 (ja) * | 2002-09-26 | 2009-03-11 | Ｄｏｗａホールディングス株式会社 | 金属−セラミックス接合体の製造方法 |
| TW201601903A (zh) * | 2014-03-20 | 2016-01-16 | Jx Nippon Mining & Metals Corp | 積層體及其製造方法 |
-
2015
- 2015-03-20 TW TW104108932A patent/TW201601903A/zh unknown
- 2015-03-20 JP JP2016508828A patent/JP6038389B2/ja active Active
- 2015-03-20 WO PCT/JP2015/058555 patent/WO2015141839A1/fr not_active Ceased
-
2016
- 2016-11-02 JP JP2016214888A patent/JP6511424B2/ja active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107868656A (zh) * | 2016-09-26 | 2018-04-03 | 罗宇晴 | 导热铝料的组成物及其制造方法 |
| CN110382445A (zh) * | 2017-02-28 | 2019-10-25 | 三菱综合材料株式会社 | 铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法 |
| CN115124362A (zh) * | 2022-06-20 | 2022-09-30 | 昆明冶金研究院有限公司北京分公司 | 陶瓷覆铜板及其制备方法 |
| CN115124362B (zh) * | 2022-06-20 | 2023-07-18 | 昆明冶金研究院有限公司北京分公司 | 陶瓷覆铜板及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017043101A (ja) | 2017-03-02 |
| WO2015141839A1 (fr) | 2015-09-24 |
| JP6038389B2 (ja) | 2016-12-07 |
| JPWO2015141839A1 (ja) | 2017-04-13 |
| JP6511424B2 (ja) | 2019-05-15 |
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