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TW201601351A - Light-emitting device, wavelength conversion member, and method of manufacturing wavelength conversion member - Google Patents

Light-emitting device, wavelength conversion member, and method of manufacturing wavelength conversion member Download PDF

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Publication number
TW201601351A
TW201601351A TW104117674A TW104117674A TW201601351A TW 201601351 A TW201601351 A TW 201601351A TW 104117674 A TW104117674 A TW 104117674A TW 104117674 A TW104117674 A TW 104117674A TW 201601351 A TW201601351 A TW 201601351A
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wavelength conversion
light
conversion unit
substrate
wavelength
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TW104117674A
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Chinese (zh)
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Masaaki Kadomi
Hideki Asano
Takashi Nishimiya
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Nippon Electric Glass Co
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0239Combinations of electrical or optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Filters (AREA)

Abstract

本發明提供一種發光裝置,其使用複數種量子點,且具有能夠減小各個發光裝置間之發光裝置之出射光之色調之偏差的構成。 第1波長轉換組件21具有第1基板21a、及第1波長轉換部21b。第1波長轉換部21b含有量子點。第2波長轉換組件22具有第2基板22a、及第2波長轉換部22b,且以第1波長轉換部21b與第2波長轉換部22b對向之方式配置。第2波長轉換部22b含有發光波長與第1波長轉換部21b所含之量子點不同之量子點。光源11係以對第1及第2波長轉換部21b、22b之各者出射量子點之激發光之方式構成。 The present invention provides a light-emitting device that uses a plurality of kinds of quantum dots and has a configuration capable of reducing variations in color tone of light emitted from light-emitting devices between light-emitting devices. The first wavelength conversion unit 21 includes a first substrate 21a and a first wavelength conversion unit 21b. The first wavelength conversion unit 21b contains quantum dots. The second wavelength conversion unit 22 includes the second substrate 22a and the second wavelength conversion unit 22b, and is disposed such that the first wavelength conversion unit 21b and the second wavelength conversion unit 22b face each other. The second wavelength conversion unit 22b includes quantum dots having an emission wavelength different from that of the quantum dots included in the first wavelength conversion unit 21b. The light source 11 is configured to emit excitation light of the quantum dots to each of the first and second wavelength conversion units 21b and 22b.

Description

發光裝置、波長轉換構件及波長轉換構件之製造方法 Light-emitting device, wavelength conversion member, and method of manufacturing wavelength conversion member

本發明係關於一種發光裝置、波長轉換構件及波長轉換構件之製造方法。 The present invention relates to a light emitting device, a wavelength converting member, and a method of manufacturing a wavelength converting member.

近年來,使用發光二極體之發光裝置之進步顯著,被用於液晶之背光源、大型顯示器等。尤其是,由於短波長光之發光元件之半導體材料的發展,而能夠獲得短波長之光,因此,使用該短波長之光激發螢光體而能夠獲得更多樣化之波長之光。 In recent years, the improvement of the light-emitting device using the light-emitting diode has been remarkable, and it has been used for a backlight of a liquid crystal, a large-sized display, or the like. In particular, since short-wavelength light can be obtained due to the development of a semiconductor material of a short-wavelength light-emitting element, light of a more diverse wavelength can be obtained by exciting the phosphor using the short-wavelength light.

自先前以來,已知有使用量子點之發光裝置。例如,於專利文獻1中揭示有一種具備由發光波長互不相同之2種量子點混合並分散而成之波長轉換構件的發光裝置。 Light-emitting devices using quantum dots have been known since the prior art. For example, Patent Document 1 discloses a light-emitting device including a wavelength conversion member in which two kinds of quantum dots having different emission wavelengths are mixed and dispersed.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2011-202148號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-202148

如專利文獻1所記載般,自混合使用有2種量子點之發光裝置出射含有一量子點之發光與另一量子點之發光的光。此種發光裝置之出射光之色調根據量子點之調配比率或各量子點之發光效率等變化。因此,於使用複數種量子點之發光裝置中,會產生於僅使用1種量子點之發光裝置中不可能產生之特有之問題,即,各個發光裝置間之出射 光之色調可能產生偏差。 As described in Patent Document 1, a light-emitting device using two kinds of quantum dots is used to emit light containing the light emission of one quantum dot and the light emission of another quantum dot. The color tone of the light emitted from such a light-emitting device varies depending on the ratio of the quantum dots, the luminous efficiency of each quantum dot, and the like. Therefore, in a light-emitting device using a plurality of kinds of quantum dots, a unique problem that cannot be generated in a light-emitting device using only one type of quantum dots, that is, an emission between the respective light-emitting devices, is generated. The hue of light may be biased.

本發明之主要目的在於提供一種發光裝置,其使用複數種量子點,其具有能夠減小各個發光裝置間之出射光之色調之偏差的構成。 SUMMARY OF THE INVENTION A primary object of the present invention is to provide a light-emitting device using a plurality of types of quantum dots having a configuration capable of reducing variations in color tone of emitted light between respective light-emitting devices.

本發明之發光裝置包括:第1波長轉換組件,其具有第1基板、及設置於第1基板上且包含量子點之第1波長轉換部;第2波長轉換組件,其具有第2基板、及設置於第2基板上且含有發光波長與第1波長轉換部所含之量子點不同之量子點的第2波長轉換部,且以第1波長轉換部與第2波長轉換部對向之方式配置;及光源,其對第1及第2波長轉換部之各者出射上述量子點之激發光。 A light-emitting device according to the present invention includes: a first wavelength conversion unit including a first substrate; and a first wavelength conversion unit including quantum dots provided on the first substrate; and a second wavelength conversion unit having a second substrate and a second wavelength conversion unit that includes a quantum dot having an emission wavelength different from a quantum dot included in the first wavelength conversion unit, and is disposed so that the first wavelength conversion unit and the second wavelength conversion unit face each other And a light source that emits excitation light of the quantum dots to each of the first and second wavelength conversion sections.

於本發明之發光裝置中,第1波長轉換部與第2波長轉換部係設置於不同之基板上。因此,可預先確定來自第1波長轉換部之發光波長及發光強度、以及來自第2波長轉換部之發光波長及發光強度後,組合第1及第2波長轉換組件。因此,可減小各個發光裝置間之發光裝置之出射光之色調的偏差。 In the light-emitting device of the present invention, the first wavelength converting portion and the second wavelength converting portion are provided on different substrates. Therefore, the first and second wavelength conversion units can be combined by determining the emission wavelength and the emission intensity from the first wavelength conversion unit and the emission wavelength and the emission intensity from the second wavelength conversion unit in advance. Therefore, variations in the hue of the outgoing light of the light-emitting device between the respective light-emitting devices can be reduced.

本發明之發光裝置亦可進而具備側壁部,該側壁部將第1基板與第2基板連接,且與第1及第2基板一併構成單元。第1及第2波長轉換部亦可配置於單元內。根據該構成,可抑制第1及第2波長轉換部與水分或氧接觸。由此,可抑制第1及第2波長轉換部之伴隨水分或氧之劣化。 The light-emitting device of the present invention may further include a side wall portion that connects the first substrate and the second substrate, and constitutes a unit together with the first and second substrates. The first and second wavelength conversion units may be disposed in the unit. According to this configuration, it is possible to prevent the first and second wavelength conversion units from coming into contact with moisture or oxygen. Thereby, deterioration of moisture or oxygen accompanying the first and second wavelength conversion sections can be suppressed.

又,本發明之波長轉換構件包括:第1波長轉換組件,其具有第1基板、及設置於第1基板上且包含量子點之第1波長轉換部;及第2波長轉換組件,其具有第2基板、及設置於第2基板上且含有發光波長與第1波長轉換部所含之量子點不同之量子點的第2波長轉換部,且以第1波長轉換部與第2波長轉換部對向之方式配置。 Further, the wavelength conversion member of the present invention includes: a first wavelength conversion unit including a first substrate; and a first wavelength conversion unit including quantum dots provided on the first substrate; and a second wavelength conversion unit having a first wavelength conversion unit a second substrate and a second wavelength conversion unit that is provided on the second substrate and includes a quantum dot having an emission wavelength different from a quantum dot included in the first wavelength conversion unit, and is a pair of the first wavelength conversion unit and the second wavelength conversion unit. Configure it in a way.

於本發明之波長轉換構件中,第1波長轉換部與第2波長轉換部 係設置於不同之基板上。因此,可預先確定來自第1波長轉換部之發光波長及發光強度、以及來自第2波長轉換部之發光波長及發光強度後,組合第1及第2波長轉換組件。因此,可減小各個發光裝置間之發光裝置之出射光之色調的偏差。 In the wavelength conversion member of the present invention, the first wavelength conversion unit and the second wavelength conversion unit It is set on different substrates. Therefore, the first and second wavelength conversion units can be combined by determining the emission wavelength and the emission intensity from the first wavelength conversion unit and the emission wavelength and the emission intensity from the second wavelength conversion unit in advance. Therefore, variations in the hue of the outgoing light of the light-emitting device between the respective light-emitting devices can be reduced.

又,本發明之發光裝置之製造方法係包括波長轉換構件、及對波長轉換構件出射光之光源的發光裝置之製造方法,且包括以下步驟:準備第1波長轉換組件,該第1波長轉換組件具有第1基板、及設置於第1基板上且包含量子點之第1波長轉換部;準備第2波長轉換組件,該第2波長轉換組件具有第2基板、及設置於第2基板上且含有發光波長與第1波長轉換部所含之量子點不同之量子點的第2波長轉換部;及製作步驟,其係以第1波長轉換部與第2波長轉換部對向之方式配置第1及第2波長轉換組件,從而製作波長轉換構件。 Moreover, the manufacturing method of the light-emitting device of the present invention includes a wavelength conversion member and a method of manufacturing the light-emitting device that emits light to the wavelength conversion member, and includes the steps of: preparing a first wavelength conversion component, the first wavelength conversion component a first substrate and a first wavelength conversion unit including quantum dots provided on the first substrate; and a second wavelength conversion unit having a second substrate and being provided on the second substrate a second wavelength conversion unit that emits a quantum dot having a different wavelength from the quantum dot contained in the first wavelength conversion unit; and a manufacturing step of arranging the first and second wavelength conversion units in a first direction The second wavelength conversion component is used to fabricate a wavelength conversion member.

於本發明之發光裝置之製造方法中,亦可在製作步驟之前,進而包括以下步驟:將第1及第2波長轉換組件之至少一者準備複數個,並測定各波長轉換組件之發光強度;及基於所測定之發光強度,自複數個第1及第2波長轉換組件中,決定於製作步驟中組合之第1及第2波長轉換組件。於該情形時,可選擇能夠獲得所需之波長之出射光的第1及第2波長轉換組件。因此,可抑制各個發光裝置間之發光裝置之出射光之色調的偏差。 In the method of manufacturing a light-emitting device of the present invention, before the manufacturing step, the method further includes the steps of: preparing at least one of the first and second wavelength conversion components, and measuring the light-emitting intensity of each wavelength conversion component; And based on the measured luminous intensity, the first and second wavelength conversion components combined in the production step are determined from the plurality of first and second wavelength conversion modules. In this case, the first and second wavelength conversion modules capable of obtaining the outgoing light of the desired wavelength can be selected. Therefore, variations in the hue of the light emitted from the light-emitting devices between the respective light-emitting devices can be suppressed.

於本發明之發光裝置之製造方法中,亦可在製作步驟之前,進而包括進行至少一個波長轉換組件之老化之步驟。於該情形時,可抑制因波長轉換部之發光波長或發光強度伴隨著老化之變化而導致之各個發光裝置間之發光裝置之出射光之色調的偏差。 In the method of fabricating the light-emitting device of the present invention, the step of aging the at least one wavelength conversion component may be further included before the fabrication step. In this case, variations in the color tone of the light emitted from the light-emitting devices between the respective light-emitting devices due to the change in the emission wavelength or the light-emitting intensity of the wavelength conversion portion can be suppressed.

於本發明之發光裝置之製造方法中,亦可在製作步驟之前,進而包括以下步驟:將第1及第2波長轉換組件之至少一者準備複數個,並對複數個波長轉換組件之至少一個進行老化;於老化步驟之後,亦 可進而包括以下步驟:測定各波長轉換組件之發光強度;及基於所測定之發光強度,自複數個第1及第2波長轉換組件中,決定於製作步驟中組合之第1及第2波長轉換組件。於該情形時,可更有效地抑制因波長轉換部之發光波長或發光強度伴隨著老化之變化而導致之各個發光裝置間之發光裝置之出射光之色調的偏差。 In the method of fabricating the light-emitting device of the present invention, before the manufacturing step, the method further includes the steps of: preparing at least one of the first and second wavelength conversion components, and at least one of the plurality of wavelength conversion components. Perform aging; after the aging step, The method further includes the steps of: measuring the luminous intensity of each wavelength conversion component; and determining the first and second wavelength conversions combined in the production step from the plurality of first and second wavelength conversion components based on the measured luminous intensity Component. In this case, it is possible to more effectively suppress variations in the color tone of the light emitted from the light-emitting devices between the respective light-emitting devices due to the change in the emission wavelength or the light-emitting intensity of the wavelength conversion portion.

根據本發明,可提供一種發光裝置,其使用複數種量子點,且具有能夠減小各個發光裝置間之發光裝置之出射光之色調之偏差的構成。 According to the present invention, it is possible to provide a light-emitting device which uses a plurality of kinds of quantum dots and has a configuration capable of reducing variations in the hue of the light emitted from the light-emitting devices between the respective light-emitting devices.

1‧‧‧發光裝置 1‧‧‧Lighting device

1a‧‧‧發光裝置 1a‧‧‧Lighting device

1b‧‧‧發光裝置 1b‧‧‧Lighting device

10‧‧‧波長轉換構件 10‧‧‧wavelength conversion member

11‧‧‧光源 11‧‧‧Light source

21‧‧‧第1波長轉換組件 21‧‧‧1st wavelength conversion component

21a‧‧‧第1基板 21a‧‧‧1st substrate

21b‧‧‧第1波長轉換部 21b‧‧‧1st wavelength conversion unit

22‧‧‧第2波長轉換組件 22‧‧‧2nd wavelength conversion component

22a‧‧‧第2基板 22a‧‧‧2nd substrate

22b‧‧‧第2波長轉換部 22b‧‧‧2nd wavelength conversion unit

23‧‧‧側壁部 23‧‧‧ Side wall

24‧‧‧單元 24‧‧ units

24a‧‧‧內部空間 24a‧‧‧Internal space

圖1係第1實施形態之發光裝置之模式性剖視圖。 Fig. 1 is a schematic cross-sectional view showing a light-emitting device of a first embodiment.

圖2係第2實施形態之發光裝置之模式性剖視圖。 Fig. 2 is a schematic cross-sectional view showing a light-emitting device of a second embodiment.

圖3係第3實施形態之發光裝置之模式性剖視圖。 Fig. 3 is a schematic cross-sectional view showing a light-emitting device of a third embodiment.

以下,對實施本發明之較佳之形態進行說明。但是,下述實施形態僅為例示。本發明不受下述實施形態任何限定。 Hereinafter, preferred embodiments for carrying out the invention will be described. However, the following embodiments are merely illustrative. The present invention is not limited to the following embodiments.

又,於實施形態等中所參照之各圖式中,設為具有實質上相同之功能之構件係以相同符號參照。又,實施形態等中所參照之圖式係模式性地記載者。存在圖式中所描繪之物體之尺寸的比率等與實際之物體之尺寸的比率等不同之情形。於圖式相互間,亦存在物體之尺寸比率等不同之情形。具體之物體之尺寸比率等應參考以下之說明進行判斷。 In the drawings, which are referred to in the embodiments and the like, members having substantially the same functions are referred to by the same reference numerals. Further, the drawings referred to in the embodiments and the like are schematically described. There is a case where the ratio of the size of the object depicted in the drawing and the ratio of the size of the actual object are different. In the case of patterns, there are also cases where the size ratio of the objects is different. The specific size ratio of the object should be judged by referring to the following instructions.

(第1實施形態) (First embodiment)

圖1係第1實施形態之發光裝置1之模式性剖視圖。 Fig. 1 is a schematic cross-sectional view of a light-emitting device 1 according to a first embodiment.

如圖1所示,發光裝置1包括波長轉換構件10及光源11。波長轉換構件10係於激發光入射時出射波長與激發光不同之波長之光的構件。 As shown in FIG. 1, the light-emitting device 1 includes a wavelength conversion member 10 and a light source 11. The wavelength conversion member 10 is a member that emits light having a wavelength different from that of the excitation light when the excitation light is incident.

波長轉換構件10具備複數個波長轉換組件。具體而言,波長轉換構件10具備第1波長轉換組件21、及第2波長轉換組件22。 The wavelength conversion member 10 is provided with a plurality of wavelength conversion components. Specifically, the wavelength conversion member 10 includes the first wavelength conversion unit 21 and the second wavelength conversion unit 22 .

第1波長轉換組件21與第2波長轉換組件22相互隔開間隔而對向。第1波長轉換組件21具有第1基板21a。第1基板21a可由例如玻璃板、陶瓷板、樹脂板等構成。其中,第1基板21a較佳為由玻璃板或陶瓷板等包含無機材料之板構成。如此,藉由將第1基板21a設為玻璃板或陶瓷板等包含無機材料之板,而對於自光源11出射之光或外部之氛圍不易劣化,可抑制透明性下降,從而可長期維持轉換效率。 The first wavelength conversion unit 21 and the second wavelength conversion unit 22 are opposed to each other with a space therebetween. The first wavelength conversion unit 21 has a first substrate 21a. The first substrate 21a can be made of, for example, a glass plate, a ceramic plate, a resin plate or the like. Among them, the first substrate 21a is preferably made of a plate containing an inorganic material such as a glass plate or a ceramic plate. When the first substrate 21a is made of a plate containing an inorganic material such as a glass plate or a ceramic plate, the light emitted from the light source 11 or the external atmosphere is less likely to be deteriorated, and the transparency can be suppressed from being lowered, so that the conversion efficiency can be maintained for a long period of time. .

於第1基板21a上配置有層狀之第1波長轉換部21b。具體而言,於第1基板21a之第2波長轉換組件22側之表面上配置有第1波長轉換部21b。第1波長轉換部21b係配置於第1基板21a之除周緣部以外之實質上整體之上。第1基板21a之周緣部自第1波長轉換部21b露出。 A layered first wavelength conversion portion 21b is disposed on the first substrate 21a. Specifically, the first wavelength conversion portion 21b is disposed on the surface of the first substrate 21a on the second wavelength conversion element 22 side. The first wavelength conversion unit 21b is disposed on substantially the entire entire periphery of the first substrate 21a except for the peripheral portion. The peripheral portion of the first substrate 21a is exposed from the first wavelength conversion portion 21b.

第1波長轉換部21b中含有至少1種量子點。於第1波長轉換部21b中,量子點分散於樹脂等分散介質中。第1波長轉換部21b除含有量子點及分散介質以外,亦可進而含有光散射劑等填料。作為光散射劑之具體例,例如,可列舉氧化鋁粒子、氧化鈦粒子、氧化矽粒子等高反射無機化合物粒子及高反射白色樹脂粒子等。如此,藉由使第1波長轉換部21b含有光散射劑,可減小波長轉換構件10中之發光強度之面內偏差。 The first wavelength conversion unit 21b contains at least one type of quantum dot. In the first wavelength converting portion 21b, the quantum dots are dispersed in a dispersion medium such as a resin. The first wavelength conversion unit 21b may further contain a filler such as a light scattering agent in addition to the quantum dot and the dispersion medium. Specific examples of the light-scattering agent include highly-reflecting inorganic compound particles such as alumina particles, titanium oxide particles, and cerium oxide particles, and highly-reflecting white resin particles. As described above, by including the light-scattering agent in the first wavelength conversion portion 21b, the in-plane variation in the light-emission intensity in the wavelength conversion member 10 can be reduced.

於第1波長轉換組件21之第1波長轉換部21b之上方配置有第2波長轉換組件22。第2波長轉換組件22具有第2基板22a。第2基板22a與第1基板21a對向。第2基板22a可由例如玻璃板、陶瓷板、樹脂板等構成。其中,第2基板22a較佳為由玻璃板或陶瓷板等包含無機材料之板構成。如此,藉由將第2基板22a設為玻璃板或陶瓷板等包含無機材料之板,而對於自光源11出射之光或外部之氛圍不易劣化,可抑制透明性下降,從而可長期維持光之提取效率。 The second wavelength conversion unit 22 is disposed above the first wavelength conversion unit 21b of the first wavelength conversion unit 21. The second wavelength conversion unit 22 has a second substrate 22a. The second substrate 22a faces the first substrate 21a. The second substrate 22a can be made of, for example, a glass plate, a ceramic plate, a resin plate or the like. Among them, the second substrate 22a is preferably made of a plate containing an inorganic material such as a glass plate or a ceramic plate. When the second substrate 22a is made of a plate containing an inorganic material such as a glass plate or a ceramic plate, the light emitted from the light source 11 or the external atmosphere is less likely to be deteriorated, and the transparency can be suppressed from being lowered, so that the light can be maintained for a long period of time. Extraction efficiency.

於第2基板22a上配置有第2波長轉換部22b。具體而言,於第2基板22a之第1波長轉換組件21側之表面上配置有第2波長轉換部22b。因此,第1基板21a與第2基板22a介隔第1及第2波長轉換部21b、22b而對向。第2波長轉換部22b係配置於第2基板22a之除周緣部以外之實質上整體之上。第2基板22a之周緣部自第2波長轉換部22b露出。 The second wavelength conversion unit 22b is disposed on the second substrate 22a. Specifically, the second wavelength conversion portion 22b is disposed on the surface of the second substrate 22a on the first wavelength conversion element 21 side. Therefore, the first substrate 21a and the second substrate 22a are opposed to each other via the first and second wavelength conversion portions 21b and 22b. The second wavelength conversion unit 22b is disposed on substantially the entire entire periphery of the second substrate 22a except for the peripheral edge portion. The peripheral portion of the second substrate 22a is exposed from the second wavelength conversion portion 22b.

於本實施形態中,第1波長轉換部21b與第2波長轉換部22b係相互隔開間隔而設置,但本發明並不限定於該構成。第1波長轉換部21b與第2波長轉換部22b亦可密接地設置。藉由將第1波長轉換部21b與第2波長轉換部22b密接地設置,可抑制第1波長轉換部21b與第2波長轉換部22b之界面上之反射,從而可提高光之提取效率。 In the present embodiment, the first wavelength conversion unit 21b and the second wavelength conversion unit 22b are provided at intervals, but the present invention is not limited to this configuration. The first wavelength conversion unit 21b and the second wavelength conversion unit 22b may be provided in close contact with each other. By providing the first wavelength converting portion 21b and the second wavelength converting portion 22b in close contact with each other, reflection at the interface between the first wavelength converting portion 21b and the second wavelength converting portion 22b can be suppressed, and light extraction efficiency can be improved.

第2波長轉換部22b中含有至少1種量子點。第2波長轉換部22b含有發光波長與第1波長轉換部21b所含之量子點不同之量子點。第2波長轉換部22b所含之量子點、與第1波長轉換部21b所含之量子點中,發光波長不同。即,第1波長轉換部21b中含有發光波長與第2波長轉換部22b所含之任一量子點均不同之量子點。 The second wavelength conversion unit 22b contains at least one type of quantum dot. The second wavelength conversion unit 22b includes quantum dots having an emission wavelength different from that of the quantum dots included in the first wavelength conversion unit 21b. The quantum dots included in the second wavelength conversion unit 22b and the quantum dots included in the first wavelength conversion unit 21b have different emission wavelengths. In other words, the first wavelength conversion unit 21b includes quantum dots having different emission wavelengths and any quantum dots included in the second wavelength conversion unit 22b.

再者,「量子點」係於激發光入射時,出射波長與激發光不同之光。自量子點出射之光之波長依存於量子點之粒徑。即,可藉由使量子點之粒徑變化而調整所獲得之光之波長。因此,量子點之粒徑係設為與所獲得之光之波長相對應之粒徑。量子點之粒徑通常為2nm~10nm左右。 Further, the "quantum dot" is a light that emits light having a wavelength different from that of the excitation light when the excitation light is incident. The wavelength of the light emerging from the quantum dots depends on the particle size of the quantum dots. That is, the wavelength of the obtained light can be adjusted by changing the particle diameter of the quantum dot. Therefore, the particle diameter of the quantum dot is set to a particle diameter corresponding to the wavelength of the obtained light. The particle size of the quantum dots is usually about 2 nm to 10 nm.

例如,作為若照射波長為300nm~440nm之紫外~近紫外之激發光則發出藍色之可見光(波長為440nm~480nm之螢光)之量子點的具體例,可列舉粒徑為2.0nm~3.0nm左右之CdSe/ZnS之微晶等。作為若照射波長為300nm~440nm之紫外~近紫外之激發光或波長為440nm~480nm之藍色之激發光則發出綠色之可見光(波長為500nm~540nm之螢光)之量子點之具體例,可列舉粒徑為3.0nm~3.3nm左 右之CdSe/ZnS之微晶等。作為若照射波長為300nm~440nm之紫外~近紫外之激發光或波長為440nm~480nm之藍色之激發光則發出黃色之可見光(波長為540nm~595nm之螢光)之量子點之具體例,可列舉粒徑為3.3nm~4.5nm左右之CdSe/ZnS之微晶等。作為若照射波長為300nm~440nm之紫外~近紫外之激發光或波長為440nm~480nm之藍色之激發光則發出紅色之可見光(波長為600nm~700nm之螢光)之量子點之具體例,可列舉粒徑為4.5nm~10nm左右之CdSe/ZnS之微晶等。 For example, a specific example of a quantum dot which emits blue visible light (fluorescence having a wavelength of 440 nm to 480 nm) when irradiated with ultraviolet to near-ultraviolet excitation light having a wavelength of 300 nm to 440 nm is exemplified by a particle diameter of 2.0 nm to 3.0 nm. Crystallites of CdSe/ZnS on the left and right. A specific example of a quantum dot emitting green visible light (fluorescence having a wavelength of 500 nm to 540 nm) when irradiated with excitation light of ultraviolet to near ultraviolet light having a wavelength of 300 nm to 440 nm or blue light having a wavelength of 440 nm to 480 nm. List the particle size from 3.0nm to 3.3nm left The right crystal of CdSe/ZnS, etc. A specific example of a quantum dot that emits yellow visible light (fluorescence with a wavelength of 540 nm to 595 nm) when irradiated with excitation light of ultraviolet to near ultraviolet light having a wavelength of 300 nm to 440 nm or blue light having a wavelength of 440 nm to 480 nm. Crystallites of CdSe/ZnS having a particle diameter of about 3.3 nm to 4.5 nm are listed. A specific example of a quantum dot that emits red visible light (fluorescence with a wavelength of 600 nm to 700 nm) when irradiated with excitation light of ultraviolet to near ultraviolet light having a wavelength of 300 nm to 440 nm or blue light having a wavelength of 440 nm to 480 nm. Crystallites of CdSe/ZnS having a particle diameter of about 4.5 nm to 10 nm are listed.

於發光裝置1中,第1基板21a與第2基板22a係藉由側壁部23而連接。側壁部23將第1基板21a之周緣部與第2基板22a之周緣部連接。藉由該等側壁部23以及第1及第2基板21a、22a構成單元24。第1波長轉換部21b與第2波長轉換部22b係配置於單元24內。具體而言,於單元24之內部空間24a內密封有第1及第2波長轉換部21b、22b。因此,可抑制第1及第2波長轉換部21b、22b與氧或水分之接觸。因此,可抑制第1及第2波長轉換部21b、22b之劣化。 In the light-emitting device 1, the first substrate 21a and the second substrate 22a are connected by the side wall portion 23. The side wall portion 23 connects the peripheral edge portion of the first substrate 21a to the peripheral edge portion of the second substrate 22a. The unit 24 is constituted by the side wall portions 23 and the first and second substrates 21a and 22a. The first wavelength conversion unit 21b and the second wavelength conversion unit 22b are disposed in the unit 24. Specifically, the first and second wavelength converting portions 21b and 22b are sealed in the internal space 24a of the unit 24. Therefore, contact between the first and second wavelength converting portions 21b and 22b and oxygen or moisture can be suppressed. Therefore, deterioration of the first and second wavelength conversion sections 21b and 22b can be suppressed.

側壁部23可由例如玻璃、陶瓷、金屬構成、或藉由利用金屬層等塗佈玻璃或陶瓷之表面而構成。 The side wall portion 23 may be formed of, for example, glass, ceramic, metal, or by coating a surface of glass or ceramic with a metal layer or the like.

再者,側壁部23與第1及第2基板21a、22b之各者亦可藉由焊接、陽極接合、使用焊料等無機接合材料之接合等而接合。 Further, each of the side wall portion 23 and the first and second substrates 21a and 22b may be joined by welding, anodic bonding, bonding using an inorganic bonding material such as solder, or the like.

發光裝置1具備光源11。光源11相對於第1波長轉換部21b與第2波長轉換部22b,配置於第1及第2波長轉換部21b、22b之對向方向上之一側。具體而言,光源11係配置於單元24之外側,更具體而言,配置於單元24之第1波長轉換組件21之外表面側。光源11係以如下方式配置:自光源11出射之光透過第1波長轉換組件21,其後,入射至第2波長轉換組件22。 The light-emitting device 1 is provided with a light source 11. The light source 11 is disposed on one side of the first and second wavelength conversion sections 21b and 22b in the opposing direction with respect to the first wavelength conversion section 21b and the second wavelength conversion section 22b. Specifically, the light source 11 is disposed on the outer side of the unit 24, and more specifically, on the outer surface side of the first wavelength conversion unit 21 of the unit 24. The light source 11 is disposed such that light emitted from the light source 11 passes through the first wavelength conversion unit 21 and then enters the second wavelength conversion unit 22.

光源11對第1及第2波長轉換部21b、22b之各者出射含有量子點之 激發光之光。光源11除包含第1及第2波長轉換部21b、22b所含之量子點之激發波長之光以外,亦可包含其他波長之光。 The light source 11 emits quantum dots including each of the first and second wavelength conversion units 21b and 22b. Excitation light. The light source 11 may include light of other wavelengths in addition to the light of the excitation wavelength of the quantum dots included in the first and second wavelength conversion sections 21b and 22b.

光源11可由例如LED(Light Emitting Diode,發光二極體)元件、LD(Laser Diode,雷射二極體)元件等構成。 The light source 11 can be constituted by, for example, an LED (Light Emitting Diode) element, an LD (Laser Diode) element, or the like.

於發光裝置1中,自光源11對第1及第2波長轉換部21b、22b出射包含第1及第2波長轉換部21b、22b所含之量子點之激發波長之光的光。因此,於第1及第2波長轉換部21b、22b中,吸收激發光,並出射波長長於激發波長之光。 In the light-emitting device 1, light from the excitation wavelengths of the quantum dots included in the first and second wavelength conversion sections 21b and 22b is emitted from the light source 11 to the first and second wavelength conversion sections 21b and 22b. Therefore, the first and second wavelength converting sections 21b and 22b absorb the excitation light and emit light having a wavelength longer than the excitation wavelength.

發光裝置1可出射第1波長轉換部21b所含之量子點之發光與第2波長轉換部22b所含之量子點之發光的混合光,亦可出射第1波長轉換部21b所含之量子點之發光、第2波長轉換部22b所含之量子點之發光、及自光源11出射且透過第1及第2波長轉換部21b、22b之光的混合光。 The light-emitting device 1 can emit mixed light of the light emitted from the quantum dots included in the first wavelength converting portion 21b and the light emitted from the quantum dots included in the second wavelength converting portion 22b, and can also emit the quantum dots included in the first wavelength converting portion 21b. The light emission, the light emission of the quantum dots included in the second wavelength conversion unit 22b, and the mixed light of the light emitted from the light source 11 and transmitted through the first and second wavelength conversion units 21b and 22b.

發光裝置1之製造方法並無特別限定。發光裝置1例如可按以下要領製造。 The method of manufacturing the light-emitting device 1 is not particularly limited. The light-emitting device 1 can be manufactured, for example, in the following manner.

首先,準備第1波長轉換組件21。具體而言,於第1基板21a上形成第1波長轉換部21b。第1波長轉換部21b可藉由例如塗佈含有量子點之焊膏並使其乾燥而形成。 First, the first wavelength conversion unit 21 is prepared. Specifically, the first wavelength conversion portion 21b is formed on the first substrate 21a. The first wavelength conversion unit 21b can be formed, for example, by applying a solder paste containing quantum dots and drying the solder paste.

又,準備第2波長轉換組件22。具體而言,於第2基板22a上形成第2波長轉換部22b。第2波長轉換部22b可藉由例如塗佈含有量子點之焊膏並使其乾燥而形成。 Further, the second wavelength conversion unit 22 is prepared. Specifically, the second wavelength conversion portion 22b is formed on the second substrate 22a. The second wavelength conversion unit 22b can be formed, for example, by applying a solder paste containing quantum dots and drying the solder paste.

其次,將第1波長轉換組件21與第2波長轉換組件22以第1基板21a與第2基板22a對向之方式配置,而製作波長轉換構件10(製作步驟)。 Then, the first wavelength conversion unit 21 and the second wavelength conversion unit 22 are disposed so that the first substrate 21a and the second substrate 22a face each other, and the wavelength conversion member 10 is produced (production step).

另外,例如於製作使用複數種量子點之發光裝置之情形時,考慮使一個波長轉換部包含全部量子點。其原因在於:減少形成之波長轉換部之數量使波長轉換構件之製造更容易。 Further, for example, in the case of producing a light-emitting device using a plurality of kinds of quantum dots, it is considered that one wavelength conversion portion includes all quantum dots. The reason for this is that reducing the number of wavelength converting portions formed makes the manufacture of the wavelength converting member easier.

然而,本發明者等人進行銳意研究後,結果發現於使一個波長轉換構件包含全部種類之量子點之情形時,可能產生如下問題:各個發光裝置間之來自發光裝置之出射光之色調之偏差變大。其原因雖並未確定,但考慮以下理由。於含有複數種量子點之發光裝置中,各種點之發光效率較大地影響出射光之色調。量子點係藉由進行老化而使發光效率變化。藉由進行老化而變化之發光效率之比率根據量子點之種類而不同。因此,於含有複數種量子點之發光裝置中,必須亦考慮因老化所導致之發光效率之變化比率而調整複數種量子點之調配比率等。然而,即便為同種量子點,亦存在因老化所導致之發光效率之變化比率不同之情形。因此,難以高精度地控制自含有複數種量子點之發光裝置出射之光之色調。 However, the inventors of the present invention conducted intensive studies and found that when a wavelength conversion member contains all kinds of quantum dots, there may be a problem that the deviation of the color tone of the emitted light from the light-emitting device between the respective light-emitting devices may occur. Become bigger. Although the reason is not fixed, the following reasons are considered. In a light-emitting device including a plurality of kinds of quantum dots, the luminous efficiency of various points greatly affects the color tone of the emitted light. Quantum dots change the luminous efficiency by aging. The ratio of the luminous efficiency that changes by aging varies depending on the type of quantum dot. Therefore, in a light-emitting device including a plurality of kinds of quantum dots, it is necessary to adjust the ratio of the plurality of kinds of quantum dots and the like in consideration of the change ratio of the luminous efficiency due to aging. However, even in the case of the same kind of quantum dots, there is a case where the ratio of change in luminous efficiency due to aging is different. Therefore, it is difficult to control the color tone of light emitted from a light-emitting device including a plurality of quantum dots with high precision.

於發光裝置1中,第1波長轉換部21b係設置於第1基板21a上,另一方面,第2波長轉換部22b係設置於第2基板22a上。第1波長轉換部21b與第2波長轉換部22b係分開設置。因此,可預先測定自第1波長轉換部21b出射之光之色調及強度。又,可預先推測並調整自第2波長轉換部22b出射之光之色調及強度。因此,於組合第1波長轉換組件21與第2波長轉換組件22而製造波長轉換構件10之前,可預測自所要製造之波長轉換構件10出射之光之色調。其結果,可減小各個發光裝置間之發光裝置之出射光之色調的偏差。 In the light-emitting device 1, the first wavelength conversion portion 21b is provided on the first substrate 21a, and the second wavelength conversion portion 22b is provided on the second substrate 22a. The first wavelength conversion unit 21b is provided separately from the second wavelength conversion unit 22b. Therefore, the hue and intensity of the light emitted from the first wavelength converting portion 21b can be measured in advance. Moreover, the color tone and intensity of the light emitted from the second wavelength conversion unit 22b can be estimated and adjusted in advance. Therefore, before the wavelength conversion member 10 is manufactured by combining the first wavelength conversion unit 21 and the second wavelength conversion unit 22, the color tone of the light emitted from the wavelength conversion member 10 to be manufactured can be predicted. As a result, variations in the hue of the light emitted from the light-emitting device between the respective light-emitting devices can be reduced.

就進一步減小各個發光裝置間之發光裝置之出射光之色調之偏差的觀點而言,較佳為於製作步驟之前,將第1及第2波長轉換組件21、22之至少一者準備複數個,於測定出各波長轉換組件21、22之發光強度之後,基於所測定之發光強度,自複數個第1及第2波長轉換組件21、22中,決定於製作步驟中組合之第1波長轉換組件21及第2波長轉換組件22。藉此,可選擇例如能夠獲得接近於所需色調之出射光之波長之出射光的第1及第2波長轉換組件21、22。其結果,可減小各個 發光裝置間之發光裝置之出射光之色調的偏差。 In order to further reduce the variation in the hue of the light emitted from the light-emitting device between the respective light-emitting devices, it is preferable to prepare at least one of the first and second wavelength conversion modules 21 and 22 before the production step. After measuring the luminous intensity of each of the wavelength conversion modules 21 and 22, based on the measured luminous intensity, the first wavelength conversion is determined from the plurality of first and second wavelength conversion units 21 and 22 in the production step. The component 21 and the second wavelength conversion component 22. Thereby, for example, the first and second wavelength conversion modules 21 and 22 capable of obtaining the emitted light of a wavelength close to the emission light of a desired color tone can be selected. As a result, each can be reduced A deviation in the hue of the emitted light of the light-emitting device between the light-emitting devices.

較佳為於製作步驟之前,進行至少一個波長轉換組件21、22之老化。藉由預先進行老化,可抑制波長轉換構件10中之波長轉換組件21、22之發光之色調的經時變化。因此,可進一步減小各個發光裝置間之發光裝置之出射光之色調的偏差。 Preferably, the aging of the at least one wavelength conversion component 21, 22 is performed prior to the fabrication step. By aging in advance, temporal changes in the color tone of the light-emitting elements 21 and 22 in the wavelength conversion member 10 can be suppressed. Therefore, the variation in the hue of the light emitted from the light-emitting device between the respective light-emitting devices can be further reduced.

再者,所謂「老化」,意指對波長轉換組件於特定期間內照射包含激發波長之光。 Furthermore, "aging" means that the wavelength conversion element is irradiated with light having an excitation wavelength for a specific period of time.

就進一步減少出射光之色調之製造偏差之觀點而言,較佳為於製作步驟之前預先將波長轉換組件21、22之至少一者準備複數個,並對該等波長轉換組件21、22之至少一個進行老化處理之後,測定各波長轉換組件21、22之發光強度。藉此,可決定如發光波長屬於所需之發光波長區域之第1波長轉換組件21與第2波長轉換組件22之組合。 In view of further reducing the manufacturing variation of the hue of the emitted light, it is preferable to prepare at least one of the wavelength conversion components 21, 22 in advance before the manufacturing step, and to at least one of the wavelength conversion components 21, 22 After an aging treatment, the luminous intensity of each of the wavelength conversion modules 21, 22 is measured. Thereby, the combination of the first wavelength conversion element 21 and the second wavelength conversion element 22 in which the emission wavelength belongs to the desired emission wavelength region can be determined.

以下,對本發明之較佳之實施形態之其他例進行說明。於以下之說明中,以共用之符號參照具有與上述第1實施形態實質上共通之功能之構件,並省略說明。 Hereinafter, other examples of preferred embodiments of the present invention will be described. In the following description, members having functions substantially the same as those of the above-described first embodiment will be referred to by the same reference numerals, and description thereof will be omitted.

(第2實施形態) (Second embodiment)

圖2係第2實施形態之發光裝置1a之模式性剖視圖。 Fig. 2 is a schematic cross-sectional view showing a light-emitting device 1a according to a second embodiment.

於第1實施形態中,對在單元24之外側配置有光源11之例進行了說明。但是,於本發明中,光源之配置並無特別限定。光源11只要相對於第1波長轉換部21b與第2波長轉換部22b之各者,配置於第1及第2波長轉換部21b、22b之對向方向上之一側即可。如圖2所示,例如,於第2實施形態之發光裝置1a中,光源11係於單元24內,配置於第1基板21a與第1波長轉換部21b之間。於此種情形時,亦可於組合第1及第2波長轉換組件21、22之前預先檢查來自第1波長轉換部21b之出射光之發光強度、及來自第2波長轉換部22b之出射光之發光強度。因此,可抑制各個發光裝置間之發光裝置之出射光之色調的偏差。 In the first embodiment, an example in which the light source 11 is disposed outside the unit 24 has been described. However, in the present invention, the arrangement of the light source is not particularly limited. The light source 11 may be disposed on one side of the first and second wavelength conversion units 21b and 22b in the opposing direction with respect to each of the first wavelength conversion unit 21b and the second wavelength conversion unit 22b. As shown in FIG. 2, for example, in the light-emitting device 1a of the second embodiment, the light source 11 is disposed in the unit 24 and disposed between the first substrate 21a and the first wavelength conversion portion 21b. In this case, the light emission intensity of the light emitted from the first wavelength conversion unit 21b and the light emitted from the second wavelength conversion unit 22b may be previously checked before the combination of the first and second wavelength conversion units 21 and 22. light intensity. Therefore, variations in the hue of the light emitted from the light-emitting devices between the respective light-emitting devices can be suppressed.

(第3實施形態) (Third embodiment)

圖3係第3實施形態之發光裝置1b之模式性剖視圖。 Fig. 3 is a schematic cross-sectional view showing a light-emitting device 1b according to a third embodiment.

於發光裝置1b中,第1波長轉換部21b與第2波長轉換部22b密接。於該情形時,亦與第1及第2實施形態同樣地,可抑制各個發光裝置間之發光裝置之出射光之色調的偏差。 In the light-emitting device 1b, the first wavelength conversion portion 21b is in close contact with the second wavelength conversion portion 22b. In this case as well, in the same manner as in the first and second embodiments, variations in the color tone of the light emitted from the light-emitting devices between the respective light-emitting devices can be suppressed.

又,可減少存在於第1波長轉換部21b與第2波長轉換部22b之間之界面之數量。因此,可抑制不需要之反射光之產生。其結果,可提高來自波長轉換構件10之光之提取效率。 Further, the number of interfaces existing between the first wavelength converting portion 21b and the second wavelength converting portion 22b can be reduced. Therefore, generation of unwanted reflected light can be suppressed. As a result, the extraction efficiency of light from the wavelength conversion member 10 can be improved.

1‧‧‧發光裝置 1‧‧‧Lighting device

10‧‧‧波長轉換構件 10‧‧‧wavelength conversion member

11‧‧‧光源 11‧‧‧Light source

21‧‧‧第1波長轉換組件 21‧‧‧1st wavelength conversion component

21a‧‧‧第1基板 21a‧‧‧1st substrate

21b‧‧‧第1波長轉換部 21b‧‧‧1st wavelength conversion unit

22‧‧‧第2波長轉換組件 22‧‧‧2nd wavelength conversion component

22a‧‧‧第2基板 22a‧‧‧2nd substrate

22b‧‧‧第2波長轉換部 22b‧‧‧2nd wavelength conversion unit

23‧‧‧側壁部 23‧‧‧ Side wall

24‧‧‧單元 24‧‧ units

24a‧‧‧內部空間 24a‧‧‧Internal space

Claims (7)

一種發光裝置,其包括:第1波長轉換組件,其具有第1基板、及設置於上述第1基板上且包含量子點之第1波長轉換部;第2波長轉換組件,其具有第2基板、及設置於上述第2基板上且含有發光波長與上述第1波長轉換部所含之量子點不同之量子點的第2波長轉換部,且以上述第1波長轉換部與上述第2波長轉換部對向之方式配置;及光源,對上述第1及第2波長轉換部之各者出射上述量子點之激發光。 A light-emitting device comprising: a first wavelength conversion unit; a first substrate; and a first wavelength conversion unit including quantum dots provided on the first substrate; and a second wavelength conversion unit having a second substrate; And a second wavelength conversion unit that is provided on the second substrate and includes a quantum dot having an emission wavelength different from a quantum dot included in the first wavelength conversion unit, and the first wavelength conversion unit and the second wavelength conversion unit And a light source that emits excitation light of the quantum dots to each of the first and second wavelength conversion units. 如請求項1之發光裝置,其進而包括側壁部,該側壁部將上述第1基板與上述第2基板連接,且與上述第1及第2基板一併構成單元,上述第1及第2波長轉換部係配置於上述單元內。 The light-emitting device according to claim 1, further comprising a side wall portion that connects the first substrate and the second substrate, and forms a unit together with the first and second substrates, the first and second wavelengths The conversion unit is disposed in the above unit. 一種波長轉換構件,其包括:第1波長轉換組件,其具有第1基板、及設置於上述第1基板上且包含量子點之第1波長轉換部;及第2波長轉換組件,其具有第2基板、及設置於上述第2基板上且含有發光波長與上述第1波長轉換部所含之量子點不同之量子點的第2波長轉換部,且以上述第1波長轉換部與上述第2波長轉換部對向之方式配置。 A wavelength conversion member comprising: a first wavelength conversion unit having a first substrate; and a first wavelength conversion unit including quantum dots provided on the first substrate; and a second wavelength conversion unit having a second wavelength conversion unit a substrate, and a second wavelength conversion unit provided on the second substrate and including a quantum dot having an emission wavelength different from a quantum dot included in the first wavelength conversion unit, and the first wavelength conversion unit and the second wavelength The conversion unit is configured in a corresponding manner. 一種發光裝置之製造方法,該發光裝置包括波長轉換構件、及對上述波長轉換構件出射光之光源,上述發光裝置之製造方法包括以下步驟:準備第1波長轉換組件,該第1波長轉換組件具有第1基板、及 設置於上述第1基板上且含有量子點之第1波長轉換部;準備第2波長轉換組件,該第2波長轉換組件具有第2基板、及設置於上述第2基板上且含有發光波長與上述第1波長轉換部所含之量子點不同之量子點的第2波長轉換部;及製作步驟,其係以上述第1波長轉換部與上述第2波長轉換部對向之方式配置上述第1及第2波長轉換組件,從而製作上述波長轉換構件。 A method of manufacturing a light-emitting device, comprising: a wavelength conversion member; and a light source that emits light to the wavelength conversion member, the method of manufacturing the light-emitting device comprising the steps of: preparing a first wavelength conversion component, the first wavelength conversion component having First substrate, and a first wavelength conversion unit including a quantum dot provided on the first substrate; and a second wavelength conversion unit having a second substrate and a second substrate and containing an emission wavelength and the above a second wavelength conversion unit of quantum dots having different quantum dots included in the first wavelength conversion unit; and a manufacturing step of arranging the first and first wavelength conversion units and the second wavelength conversion unit The second wavelength conversion unit is configured to fabricate the wavelength conversion member. 如請求項4之發光裝置之製造方法,其於上述製作步驟之前,進而包括以下步驟:將上述第1及第2波長轉換組件之至少一者準備複數個,並測定上述各波長轉換組件之發光強度;及基於上述所測定之發光強度,自上述複數個第1及第2波長轉換組件中,決定於上述製作步驟中組合之上述第1及第2波長轉換組件。 The method of manufacturing a light-emitting device according to claim 4, further comprising the steps of: preparing at least one of the first and second wavelength conversion components, and measuring the light emission of each of the wavelength conversion components, before the manufacturing step The first and second wavelength conversion units combined in the production step are determined from the plurality of first and second wavelength conversion modules based on the measured luminous intensity. 如請求項4或5之發光裝置之製造方法,其於上述製作步驟之前,進而包括進行至少一個上述波長轉換組件之老化之步驟。 A method of fabricating a light-emitting device according to claim 4 or 5, further comprising the step of performing aging of at least one of said wavelength conversion components before said fabricating step. 如請求項4之發光裝置之製造方法,其於上述製作步驟之前,進而包括以下步驟:將上述第1及第2波長轉換組件之至少一者準備複數個,且對上述複數個波長轉換組件之至少一個進行老化;於上述老化步驟之後,進而包括以下步驟:測定上述各波長轉換組件之發光強度;及基於上述所測定之發光強度,自上述複數個第1及第2波長轉換組件中,決定於上述製作步驟中組合之上述第1及第2波長轉換組件。 The method for manufacturing a light-emitting device according to claim 4, further comprising the steps of: preparing at least one of the first and second wavelength conversion components for the plurality of wavelength conversion components before the manufacturing step At least one of performing aging; after the aging step, further comprising the steps of: measuring the luminescence intensity of each of the wavelength conversion components; and determining, based on the measured luminescence intensity, from the plurality of first and second wavelength conversion components The first and second wavelength conversion units combined in the above manufacturing steps.
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