TW201606868A - Breaking device - Google Patents
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- TW201606868A TW201606868A TW104120321A TW104120321A TW201606868A TW 201606868 A TW201606868 A TW 201606868A TW 104120321 A TW104120321 A TW 104120321A TW 104120321 A TW104120321 A TW 104120321A TW 201606868 A TW201606868 A TW 201606868A
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Abstract
Description
本發明是關於一種將晶圓分割成一個個晶片之分斷裝置。 The present invention relates to a breaking device for dividing a wafer into individual wafers.
使IC、LSI等元件被分割預定線所劃分而形成在表面之晶圓,是藉由沿著分割預定線進行分割而被分割成帶有元件(device)之一個個晶片。作為分割晶圓之方法,有沿著分割預定線從晶圓的表面側照射雷射光束,而在晶圓內部形成改質層後,使用具有刀片(blade)之分斷裝置,沿著強度已降低之分割預定線以刀片按壓晶圓而以改質層作為起點將晶圓分割成一個個晶片的方法(參照例如下述的專利文獻1-3)。 A wafer formed on a surface by dividing an element such as an IC or an LSI by a predetermined dividing line is divided into a single chip with a device by dividing along a dividing line. As a method of dividing a wafer, a laser beam is irradiated from a surface side of the wafer along a dividing line, and after a reforming layer is formed inside the wafer, a breaking device having a blade is used along the strength. The reduced dividing line is a method in which the wafer is pressed by the blade and the wafer is divided into individual wafers using the reforming layer as a starting point (see, for example, Patent Documents 1 to 3 below).
在分割晶圓時,因為要使被分割成一個個的晶片不會飛散,所以會藉由在中央形成有開口之環狀的環狀框架上貼附膠帶,且將晶圓的其中一面朝上而將另一面貼附於從該開口部露出之膠帶上,而透過該膠帶以環狀框架支持晶圓。 When the wafer is divided, since the wafers to be divided into one piece are not scattered, the tape is attached to the ring-shaped annular frame having an opening in the center, and one side of the wafer is faced. The other side is attached to the tape exposed from the opening, and the wafer is supported by the annular frame through the tape.
專利文獻1:日本專利特開2009-148982號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2009-148982
專利文獻2:日本專利特開2013-038434號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2013-038434
專利文獻3:日本專利特開2013-058671號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2013-058671
然而,為了按壓刀片而沿著分割預定線分割晶圓,會在保持晶圓之工作夾台的保持面上,設置線狀的空間以形成為不支撐晶圓的分割預定線,而使被按壓而被割斷之晶圓朝該空間按壓擴張。因此,對於分割預定線之間隔不同的晶圓,會無法使用相同之工作夾台進行分割處理。 However, in order to press the blade along the dividing line to press the blade, a linear space is formed on the holding surface of the working chuck that holds the wafer to form a dividing line that does not support the wafer, and is pressed. The cut wafer is pressed and expanded toward the space. Therefore, it is impossible to divide the wafers having different intervals of the predetermined lines by using the same work chuck.
本發明是有鑒於上述情況而作成的發明,目的為在將晶圓按壓以分割之分斷裝置中,可使用相同的工作夾台對分割預定線之間隔不同的晶圓進行分割。 The present invention has been made in view of the above circumstances, and an object of the invention is to divide a wafer having a different interval between division lines by using the same work chuck in a dividing device that presses a wafer to divide.
第一發明為沿著分割預定線分割晶圓以形成晶片的分斷裝置,其包含工作夾台、按壓構件、分度進給手段、按壓手段及多孔質板。該工作夾台是用以保持工件組(workset),該工件組是將晶圓貼附在將具有開口部之環狀框架的該開口部予以遮閉而貼附的黏著膠帶上而構成,該晶圓形成有對應該分割預定線之線狀的分割起點,該開口部的內徑大於晶圓的外徑;該按壓構件是沿著該分割預定線按壓該工作夾台所保持之晶圓;該分度進給手段是使該 工作夾台與該按壓構件相對地分度進給;該按壓手段是使該按壓構件相對於該工作夾台所保持之晶圓在垂直方向上接近及遠離,以利用該按壓構件按壓該晶圓;該多孔質板會因該按壓構件按壓而凹陷,又,該工作夾台具備吸引保持晶圓的其中一面的吸引面,及保持該環狀框架之保持部,且是以該工作夾台保持該工件組,而利用該按壓構件沿著該分割預定線按壓並分割晶圓。 The first invention is a breaking device that divides a wafer along a dividing line to form a wafer, and includes a working chuck, a pressing member, an index feeding means, a pressing means, and a porous plate. The work chuck is configured to hold a workpiece set which is formed by attaching a wafer to an adhesive tape which is attached to the opening of the annular frame having the opening, and is attached thereto. The wafer is formed with a linear starting point corresponding to the predetermined line, and the inner diameter of the opening is larger than the outer diameter of the wafer; the pressing member presses the wafer held by the working chuck along the dividing line; Indexing means is to make this The working clamping table is indexed and fed relative to the pressing member; the pressing means is to make the pressing member approach and away from the wafer held by the working clamping table in a vertical direction to press the wafer with the pressing member; The porous plate is recessed by the pressing of the pressing member, and the working table has a suction surface for sucking and holding one of the wafers, and a holding portion for holding the annular frame, and the holding portion is held by the working plate The workpiece group is pressed and divided by the pressing member along the dividing line.
在上述分斷裝置中,較理想的是,當利用該按壓構件來按壓隔著前述多孔質板而以前述吸引面所保持之晶圓時,前述保持部所保持之前述環狀框架之上表面與前述按壓構件之前端部分之關係為:已最接近該吸引面之該按壓構件的前端部分是在不會接觸到該環狀框架之上表面的高度上。 In the above-described breaking device, it is preferable that when the wafer held by the suction surface is interposed between the porous plates by the pressing member, the upper surface of the annular frame held by the holding portion The relationship with the front end portion of the pressing member is such that the front end portion of the pressing member closest to the attraction surface is at a height that does not contact the upper surface of the annular frame.
第二發明是使用於上述分斷裝置之工作夾台,該工作夾台之吸引面具備在至少保持晶圓之區域是以會因前述按壓構件之按壓而凹陷之硬度所形成之多孔質層,且做成藉由以該按壓構件沿著該分割預定線按壓晶圓而可分割該晶圓。 According to a second aspect of the invention, there is provided a working chuck for use in the breaking device, wherein the suction surface of the working chuck includes a porous layer formed by a hardness which is recessed by pressing of the pressing member at a region where at least the wafer is held. Further, the wafer can be divided by pressing the wafer along the dividing line by the pressing member.
本發明之分斷裝置具備有保持透過黏著膠帶而使環狀框架與晶圓成為一體之工件組的工作夾台、沿著該工作夾台所保持之晶圓的分割預定線進行按壓之按壓構件,及藉由該按壓構件之按壓而凹陷之多孔質板,且當以按壓構件按壓工作夾台之吸引面所保持之晶圓時,多孔質板會 與被按壓之晶圓一起沿著分割預定線凹陷,因此不需要在工作夾台之吸引面上設置對應晶圓之分割預定線的線狀之空間。 The breaking device of the present invention includes a working chuck that holds a workpiece group that integrates the annular frame and the wafer through the adhesive tape, and a pressing member that presses along a dividing line of the wafer held by the working chuck. And a porous plate recessed by the pressing of the pressing member, and when the pressing member holds the wafer held by the suction surface of the working chuck, the porous plate The groove is recessed along the dividing line along with the pressed wafer, so that it is not necessary to provide a linear space corresponding to the planned dividing line of the wafer on the suction surface of the working chuck.
據此,可確實地將晶圓沿著分割預定線分割,且就算是分割預定線的間隔不同的晶圓,只要可隔著多孔質板以吸引面予以保持,就可以利用按壓構件進行分割。 According to this, it is possible to reliably divide the wafer along the planned dividing line, and even if the wafer having different intervals of the predetermined dividing lines can be held by the suction surface via the porous plate, the pressing member can be divided.
此外,當以該按壓構件按壓了隔著上述多孔質板而以上述吸引面所保持之晶圓時,因為上述保持部所保持之上述環狀框架的上表面與上述按壓構件之前端的關係為:已最接近該吸引面之該按壓構件的前端部分是在不會接觸到該環狀框架之上表面的高度上,因此按壓構件與環狀框架不會接觸。 Further, when the wafer held by the suction surface via the porous plate is pressed by the pressing member, the relationship between the upper surface of the annular frame and the front end of the pressing member held by the holding portion is: The front end portion of the pressing member that has been closest to the attraction surface is at a height that does not contact the upper surface of the annular frame, so that the pressing member does not come into contact with the annular frame.
因此,就變得不需要使用尺寸為大於晶圓之尺寸的環狀框架,因而可防止裝置大型化。 Therefore, it becomes unnecessary to use an annular frame having a size larger than the size of the wafer, and thus it is possible to prevent the apparatus from being enlarged.
本發明之工作夾台因為在工作夾台的吸引面上具備藉由按壓構件之按壓而凹陷的多孔質層,並可藉由按壓構件之按壓使多孔質層沿著分割預定線凹陷,因此可確實地將晶圓單片化成晶片。 The working clamp of the present invention includes a porous layer recessed by pressing of the pressing member on the suction surface of the working chuck, and the porous layer can be recessed along the dividing line by pressing by the pressing member. The wafer is singulated into wafers.
1‧‧‧工件組 1‧‧‧Workpieces
10、10a、10b‧‧‧分斷裝置 10, 10a, 10b‧‧‧ breaking device
11、20、30‧‧‧工作夾台 11, 20, 30‧‧‧Working table
110、200、300‧‧‧框體 110, 200, 300‧‧‧ frame
111、201、301‧‧‧晶圓保持部 111, 201, 301‧‧‧ Wafer Holding Department
111a、201a、301a‧‧‧吸引面 111a, 201a, 301a‧‧‧ attraction
112、202‧‧‧框架保持部 112, 202‧‧‧Framekeeping Department
113、203‧‧‧第1吸引通道 113, 203‧‧‧1st attraction channel
114、204‧‧‧第2吸引通道 114, 204‧‧‧2nd attraction channel
12、22、32‧‧‧旋轉手段 12, 22, 32‧ ‧ rotating means
13、23、33‧‧‧吸引源 13, 23, 33‧‧‧ attracting sources
14‧‧‧按壓構件 14‧‧‧Resisting members
14a‧‧‧前端部 14a‧‧‧ front end
15‧‧‧按壓手段 15‧‧‧Measure means
16‧‧‧分度進給手段 16‧‧‧Divided feeding means
17‧‧‧多孔質板 17‧‧‧Porous board
2‧‧‧加工台 2‧‧‧Processing table
21、31‧‧‧多孔質層 21, 31‧‧‧ porous layer
3‧‧‧保持面 3‧‧‧ Keep face
302‧‧‧夾持保持機構 302‧‧‧Clamping and holding mechanism
303‧‧‧框架載置部 303‧‧‧Frame Mounting Department
304‧‧‧軸部 304‧‧‧Axis
305‧‧‧夾持部 305‧‧‧Clamping Department
306‧‧‧吸引通道 306‧‧‧Attraction channel
4‧‧‧雷射照射手段 4‧‧‧Laser illumination
5‧‧‧雷射光束 5‧‧‧Laser beam
6‧‧‧分割起點 6‧‧‧ starting point
D‧‧‧元件 D‧‧‧ components
F‧‧‧環狀框架 F‧‧‧Ring frame
S‧‧‧分割預定線 S‧‧‧ dividing line
T‧‧‧黏著膠帶 T‧‧‧Adhesive tape
W‧‧‧晶圓 W‧‧‧ wafer
Wa‧‧‧表面 Wa‧‧‧ surface
Wb‧‧‧背面 Wb‧‧‧ back
+X、+Y、-Y、+Z、-Z‧‧‧方向 +X, +Y, -Y, +Z, -Z‧‧‧ directions
圖1(a)為顯示工件組之一例的立體圖,圖1(b)為顯示在晶圓內部形成分割起點之狀態的剖面圖。 Fig. 1(a) is a perspective view showing an example of a workpiece group, and Fig. 1(b) is a cross-sectional view showing a state in which a division starting point is formed inside the wafer.
圖2為顯示分斷裝置之第1例的構成的剖面圖。 Fig. 2 is a cross-sectional view showing the configuration of a first example of the breaking device.
圖3為顯示分斷裝置之第1例的動作例的剖面圖。 Fig. 3 is a cross-sectional view showing an operation example of a first example of the breaking device.
圖4為顯示分斷裝置之第2例的構成的剖面圖。 Fig. 4 is a cross-sectional view showing the configuration of a second example of the breaking device.
圖5為顯示分斷裝置之第2例的動作例的剖面圖。 Fig. 5 is a cross-sectional view showing an operation example of a second example of the breaking device.
圖6為顯示分斷裝置之第3例的構成之剖面圖。 Fig. 6 is a cross-sectional view showing the configuration of a third example of the breaking device.
圖7為顯示分斷裝置之第3例的動作例的剖面圖。 Fig. 7 is a cross-sectional view showing an operation example of a third example of the breaking device.
圖1所示之晶圓W是利用圖2所示之分斷裝置10而被分割之被加工物的一例。如圖1(a)所示,在晶圓W的表面Wa上,在由格子狀之分割預定線S所劃分之各個區域中形成有元件D。而在與晶圓W的表面Wa為相反側的背面Wb上沒有形成元件D。在加工晶圓W時,是將黏著膠帶T貼附於具有開口部之環狀框架F的背面側,且將晶圓W的表面Wa側朝上而將背面Wb側貼附在露出於該開口部之黏著膠帶T上,其中該環狀框架F的開口部具有大於晶圓W之外徑的內徑。如此進行,以形成透過黏著膠帶T使環狀框架F與晶圓W成為一體之工件組1。再者,黏著膠帶T是使用例如由有伸縮性之基材與黏著層所構成之型式的膠帶。 The wafer W shown in FIG. 1 is an example of a workpiece to be divided by the breaking device 10 shown in FIG. 2 . As shown in FIG. 1(a), on the surface Wa of the wafer W, the element D is formed in each of the regions defined by the lattice-shaped dividing line S. On the back surface Wb opposite to the surface Wa of the wafer W, the element D is not formed. When the wafer W is processed, the adhesive tape T is attached to the back side of the annular frame F having the opening, and the surface Wa side of the wafer W is directed upward and the back surface Wb side is attached to the opening. The adhesive tape T of the portion, wherein the opening portion of the annular frame F has an inner diameter larger than the outer diameter of the wafer W. This is done to form the workpiece group 1 in which the annular frame F and the wafer W are integrated by the adhesive tape T. Further, the adhesive tape T is a type of tape which is formed of, for example, a stretchable substrate and an adhesive layer.
當分割晶圓W時,會事先沿著分割預定線S形成分割起點。如圖1(b)所示,是將晶圓W的表面Wa側朝上而使其保持於保持工件組1的加工台2的保持面3上,且例如藉由雷射照射手段4沿著分割預定線S,將對晶圓W具有穿透性之波長的雷射光束5聚光於晶圓W的內部來形成對應分割預定線S之線狀的分割起點6。又,藉由圖未示之切削刀,在表面Wa上沿著分割預定線S施行用以形成不將晶圓W完全切斷之程度的深度之溝的半切(half cut),而將該溝作為 分割起點亦可。 When the wafer W is divided, the division start point is formed along the division planned line S in advance. As shown in FIG. 1(b), the surface Wa side of the wafer W is placed on the holding surface 3 of the processing table 2 holding the workpiece group 1 and is held along the holding surface 3 of the processing table 2, for example, by the laser irradiation means 4. The predetermined line S is divided, and the laser beam 5 having a wavelength that is transparent to the wafer W is condensed inside the wafer W to form a linear division starting point 6 corresponding to the planned dividing line S. Further, by a cutting blade (not shown), a half cut of a groove for forming a depth that does not completely cut the wafer W is performed along the dividing line S on the surface Wa, and the groove is formed. As The starting point can also be divided.
圖2所示之分斷裝置10具備有工作夾台11、按壓構件14、按壓手段15、分度進給手段16與多孔質板17。該工作夾台11用以保持在晶圓W內部形成有分割起點6的工件組1,該按壓構件14是沿著工作夾台11所保持之晶圓W的分割預定線S進行按壓,該按壓手段15使按壓構件14相對於工作夾台11所保持之晶圓W在垂直方向(Z軸方向)上接近及遠離並以按壓構件14按壓晶圓W,該分度進給手段16使工作夾台11與按壓構件14在Y軸方向上相對地分度進給,該多孔質板17是以會因按壓構件14之按壓而凹陷的硬度形成。 The breaking device 10 shown in FIG. 2 includes a working chuck 11, a pressing member 14, a pressing means 15, a indexing means 16 and a porous plate 17. The work chuck 11 holds a workpiece group 1 in which a split start point 6 is formed inside the wafer W, and the press member 14 is pressed along a dividing line S of the wafer W held by the work chuck 11, and the press is performed. The means 15 causes the pressing member 14 to approach and move in the vertical direction (Z-axis direction) with respect to the wafer W held by the working chuck 11, and presses the wafer W with the pressing member 14, and the indexing feeding means 16 causes the working folder The table 11 and the pressing member 14 are relatively indexed in the Y-axis direction, and the porous plate 17 is formed by the hardness which is recessed by the pressing of the pressing member 14.
工作夾台11具備有框體110、形成於框體110之內周側且用以保持晶圓W之晶圓保持部111,及形成於框體110的外周部且用以保持環狀框架F之框架保持部112。晶圓保持部111的上表面為吸引保持晶圓W之表面Wa的吸引面111a。晶圓保持部111是藉由多孔陶瓷等之多孔質構件所形成,並透過形成於框體110內部之第1吸引通道113連通於吸引源13。在框體110的下部連接有使工作夾台11朝預定方向旋轉的旋轉手段12。 The work chuck 11 includes a housing 110, a wafer holding portion 111 formed on the inner peripheral side of the housing 110 to hold the wafer W, and an outer peripheral portion of the housing 110 for holding the annular frame F. The frame holding portion 112. The upper surface of the wafer holding portion 111 is a suction surface 111a that sucks and holds the surface Wa of the wafer W. The wafer holding portion 111 is formed of a porous member such as porous ceramic, and communicates with the suction source 13 through the first suction passage 113 formed inside the casing 110. A rotation means 12 for rotating the work chuck 11 in a predetermined direction is connected to a lower portion of the casing 110.
框架保持部112是透過形成於框體110內部之第2吸引通道114而連通於吸引源13。當以工作夾台11保持工件組1時,例如,以框架保持部112所保持之環狀框架F的上表面會位於比晶圓保持部111的吸引面111a還低的(-Z側的)位置。 The frame holding portion 112 communicates with the suction source 13 through the second suction passage 114 formed inside the casing 110. When the workpiece group 1 is held by the work chuck 11, for example, the upper surface of the annular frame F held by the frame holding portion 112 may be located lower than the suction surface 111a of the wafer holding portion 111 (-Z side) position.
按壓構件14是例如,將其前端部分沿著圖1(a)所 示之晶圓W的分割預定線S的直線形成為直線狀。按壓構件14連接於按壓手段15。按壓手段15可藉由使按壓構件14朝接近晶圓W的方向下降,以透過按壓構件14按壓晶圓W。再者,也可以將按壓構件14如刀片般形成為圓形。 The pressing member 14 is, for example, a front end portion thereof as shown in Fig. 1(a) A straight line of the planned dividing line S of the wafer W is formed in a straight line shape. The pressing member 14 is connected to the pressing means 15. The pressing means 15 can press the wafer W through the pressing member 14 by lowering the pressing member 14 in the direction toward the wafer W. Further, the pressing member 14 may be formed in a circular shape like a blade.
多孔質板17是載置於工作夾台11的吸引面111a上。多孔質板17是以由超高分子量聚乙烯粉末的燒結多孔質成形體所形成之薄膜(film)所構成,且只要具有可藉由按壓構件14的按壓而凹陷的硬度即可,例如,可使用日東電工株式會社所提供之多孔片(sheet)(SUNMAP HP-5320)。該多孔片具有ASTM D2240中之蕭式硬度D42的硬度。如此所構成的多孔質板17除了可作為利用按壓構件14分割晶圓W時的緩衝材而起作用外,還可以藉由會因應荷重而凹陷之情形而不會阻礙到晶圓W以分割起點6作為起點而形成之擴張。 The porous plate 17 is placed on the suction surface 111a of the work chuck 11. The porous plate 17 is formed of a film formed of a sintered porous molded body of ultrahigh molecular weight polyethylene powder, and may have a hardness that can be recessed by pressing of the pressing member 14, for example, A porous sheet (SUNMAP HP-5320) supplied by Nitto Denko Corporation was used. The porous sheet has a hardness of a dull hardness D42 in ASTM D2240. The porous plate 17 configured as described above can function as a buffer material when the wafer W is divided by the pressing member 14, and can be recessed depending on the load without hindering the wafer W from dividing the starting point. 6 expansion as a starting point.
接著說明分斷裝置10的動作例。首先,如圖2所示,以工作夾台11來保持工件組1。具體來說,是使黏著膠帶T朝上而將晶圓W的表面Wa載置於多孔質板17上,並且將環狀框架F載置於框架保持部112上。接著,透過晶圓保持部111使其對多孔質板17發揮吸引作用而吸引保持晶圓W的表面Wa,並且通過第2吸引通道114使其對框架保持部112發揮吸引作用而吸引保持環狀框架F。 Next, an operation example of the breaking device 10 will be described. First, as shown in FIG. 2, the workpiece set 1 is held by the work chuck 11. Specifically, the surface Wa of the wafer W is placed on the porous plate 17 with the adhesive tape T facing upward, and the annular frame F is placed on the frame holding portion 112. Then, the wafer holding portion 111 is attracted to the porous sheet 17 to suck and hold the surface Wa of the wafer W, and is sucked and held by the second holding passage 114 to the frame holding portion 112. Frame F.
之後,如圖3所示,將按壓構件14配置於晶圓W的背面側Wb側的上方,且將按壓構件14定位成與朝向圖1(a)所示之Y軸方向之晶圓W的分割預定線S相對。接著,按壓 手段15使按壓構件14朝-Z方向下降,並以按壓構件14的前端部14a從黏著膠帶T側按壓晶圓W。 Thereafter, as shown in FIG. 3, the pressing member 14 is disposed above the back side Wb side of the wafer W, and the pressing member 14 is positioned to face the wafer W in the Y-axis direction shown in FIG. 1(a). The division planned line S is opposite. Then press The means 15 lowers the pressing member 14 in the -Z direction, and presses the wafer W from the adhesive tape T side with the distal end portion 14a of the pressing member 14.
藉由以按壓構件14將晶圓W朝下方按壓來施加荷重之作法,會随著施加於晶圓W的荷重使多孔質板17凹陷,並使晶圓W的表面Wa側朝向多孔質板17進行按壓擴張。然後,已無法承受按壓力之晶圓W會以形成於圖1(a)所示之分割預定線S之分割起點6作為起點而被分割。 By applying the load by pressing the wafer W downward by the pressing member 14, the porous plate 17 is recessed with the load applied to the wafer W, and the surface Wa side of the wafer W faces the porous plate 17 Press to expand. Then, the wafer W that cannot withstand the pressing force is divided by the division starting point 6 formed on the division planned line S shown in Fig. 1(a) as a starting point.
此時,如圖3所示,環狀框架F的上表面是位在比晶圓保持部111的吸引面111a還低之位置,因此框架保持部112所保持之環狀框架F的上表面與按壓構件14的前端之關係:為已最接近晶圓保持部111的吸引面111a之按壓構件14的前端部14a會位於比環狀框架F的上表面更上方,也就是說,會成為使按壓構件14的前端部14a不會接觸到環狀框架F之上表面的關係。因此,可以防止在晶圓W之分割時按壓構件14的前端部14a接觸到環狀框架F而破損之情形。又,由於在分斷裝置10中可使用對應晶圓W的尺寸的環狀框架F,因此可防止裝置過度地大型化。再者,即使環狀框架F的上表面位於與晶圓保持部111的吸引面111a相同高度或較其更高之位置上,只要在利用多孔質板17的硬度來分割晶圓W時,可使已處在最接近晶圓保持部111的吸引面111a之時的按壓構件14的前端部14a在比環狀框架F之上表面更上方處即可。 At this time, as shown in FIG. 3, the upper surface of the annular frame F is located lower than the suction surface 111a of the wafer holding portion 111, so that the upper surface of the annular frame F held by the frame holding portion 112 is The relationship between the front end of the pressing member 14 is that the front end portion 14a of the pressing member 14 that is closest to the suction surface 111a of the wafer holding portion 111 is located above the upper surface of the annular frame F, that is, it is pressed The front end portion 14a of the member 14 does not contact the relationship of the upper surface of the annular frame F. Therefore, it is possible to prevent the front end portion 14a of the pressing member 14 from coming into contact with the annular frame F and being broken when the wafer W is divided. Moreover, since the annular frame F corresponding to the size of the wafer W can be used in the breaking device 10, it is possible to prevent the apparatus from being excessively enlarged. Further, even if the upper surface of the annular frame F is located at the same height or higher than the suction surface 111a of the wafer holding portion 111, as long as the wafer W is divided by the hardness of the porous plate 17, The front end portion 14a of the pressing member 14 that is closest to the suction surface 111a of the wafer holding portion 111 may be located above the upper surface of the annular frame F.
當已沿著1條分割預定線S進行分割後,即可藉由分度進給手段16使按壓構件14朝例如+Y方向移動而使工 作夾台11與按壓構件14相對地分度進給,並將按壓構件14定位在相鄰之分割預定線S的上方側,而與上述同樣地進行按壓構件14的按壓。當已沿著朝向Y軸方向之所有分割預定線S分割晶圓W後,即可使旋轉手段12作動,使工作夾台11旋轉90度,並使圖1(a)所示之朝向X軸方向的分割預定線S朝向Y軸方向,進行同樣的按壓。在按壓手段15已沿著所有的分割起點6都分割過之時,即結束對晶圓W之分斷。如此進行以將晶圓W分割成包含元件D的晶片。再者,除了使按壓手段14在Y軸方向上分度進給之構成外,也可做成使保持晶圓W的工作夾台11在Y軸方向上分度進給之構成。也就是說,只要工作夾台11與按壓構件14可相對地分度進給即可。 When the division has been performed along one division planned line S, the pressing member 14 can be moved in the +Y direction by the index feeding means 16 to work. The clamping table 11 is indexed with respect to the pressing member 14, and the pressing member 14 is positioned above the adjacent dividing line S, and the pressing member 14 is pressed in the same manner as described above. When the wafer W has been divided along all the dividing lines S toward the Y-axis direction, the rotating means 12 can be actuated to rotate the working chuck 11 by 90 degrees, and the direction shown in Fig. 1(a) is toward the X-axis. The predetermined dividing line S of the direction is directed in the Y-axis direction, and the same pressing is performed. When the pressing means 15 has been divided along all of the dividing starting points 6, the breaking of the wafer W is ended. This is done to divide the wafer W into wafers containing the element D. Further, in addition to the configuration in which the pressing means 14 is indexed and fed in the Y-axis direction, the working table 11 holding the wafer W may be indexed and fed in the Y-axis direction. That is, as long as the work chuck 11 and the pressing member 14 can be indexed and fed relative to each other.
像這樣,在分斷裝置10中,由於將具有會因按壓構件14的按壓而凹陷之程度的硬度之多孔質板17配置在工作夾台11的吸引面111a上,因此當藉由按壓構件14按壓以工作夾台11的吸引面111a所保持的晶圓W時,就會使多孔質板17沿著分割預定線S凹陷,因此就算不在工作夾台11的吸引面111a上設置對應分割預定線S之線狀的空間,也可沿著分割預定線S確實地將晶圓W分斷。 In the breaking device 10, the porous plate 17 having the hardness which is recessed by the pressing of the pressing member 14 is disposed on the suction surface 111a of the work chuck 11, and thus by the pressing member 14 When the wafer W held by the suction surface 111a of the working chuck 11 is pressed, the porous sheet 17 is recessed along the dividing line S, so that the corresponding dividing line is not provided on the suction surface 111a of the working chuck 11 The linear space of S may also reliably separate the wafer W along the dividing line S.
圖4所示之分斷裝置10a是分斷裝置的第2例。分斷裝置10a具備有保持圖1所示之工件組1的工作夾台20,並形成為除此以外為與上述之分斷裝置10為同樣的構成。工作夾台20具備有框體200、晶圓保持部201及框架保持部202。框體200的下部連接有使工作夾台20朝預定方向旋轉之旋 轉手段22。晶圓保持部201是通過形成於框體200內部之第1吸引通道203而連通於吸引源23。又,框架保持部202是通過形成於框體200內部之第2吸引通道204而連通於吸引源23。 The breaking device 10a shown in Fig. 4 is a second example of the breaking device. The breaking device 10a is provided with a working chuck 20 that holds the workpiece group 1 shown in Fig. 1, and is formed in the same configuration as the above-described breaking device 10. The work chuck 20 includes a housing 200, a wafer holding portion 201, and a frame holding portion 202. The lower portion of the frame body 200 is connected to a rotation that rotates the work chuck 20 in a predetermined direction. Transfer means 22. The wafer holding portion 201 communicates with the suction source 23 through the first suction passage 203 formed inside the casing 200. Further, the frame holding portion 202 communicates with the suction source 23 through the second suction passage 204 formed inside the casing 200.
如圖4所示,在晶圓保持部201之吸引面201a的上方,具備有會因按壓構件14之按壓而凹陷之多孔質層21。多孔質層21具有與上述多孔質板17相同程度之硬度。 As shown in FIG. 4, the porous layer 21 which is recessed by the pressing of the pressing member 14 is provided above the suction surface 201a of the wafer holding portion 201. The porous layer 21 has the same hardness as the porous plate 17 described above.
接著,說明分斷裝置10a的動作例。與分斷裝置10同樣地,如圖5所示,是將黏著膠帶T做成朝上而將晶圓W的表面Wa載置於多孔質層21上,且以工作夾台11保持工件組1。接著,將按壓構件14的前端定位成與朝向圖1(a)所示之Y軸方向之晶圓W的分割預定線S相對,並藉由按壓手段15使按壓構件14朝-Z方向下降,並利用按壓構件14隔著黏著膠帶T按壓晶圓W。 Next, an operation example of the breaking device 10a will be described. Similarly to the breaking device 10, as shown in FIG. 5, the surface of the wafer W is placed on the porous layer 21 with the adhesive tape T facing upward, and the workpiece group 1 is held by the working chuck 11. . Next, the front end of the pressing member 14 is positioned to face the planned dividing line S of the wafer W in the Y-axis direction shown in FIG. 1(a), and the pressing member 14 is lowered in the -Z direction by the pressing means 15. The wafer W is pressed by the pressing member 14 via the adhesive tape T.
此時,随著施加在晶圓W的荷重多孔質層21會凹陷,並使晶圓W的表面Wa側朝向多孔質層21進行按壓擴張。如此進行,已無法承受按壓力之晶圓W會以分割起點6作為起點而被分割。並且,與分斷裝置10同樣地,在已沿著所有的分割起點6都分割過之時,藉由按壓手段15使按壓構件14朝+Z方向上昇,即結束對晶圓W的分斷。 At this time, the load-bearing porous layer 21 applied to the wafer W is recessed, and the surface Wa side of the wafer W is pressed and expanded toward the porous layer 21. In this way, the wafer W that cannot withstand the pressing force is divided by the division starting point 6 as a starting point. Further, similarly to the breaking device 10, when all the dividing starting points 6 have been divided, the pressing means 15 raises the pressing member 14 in the +Z direction, that is, the breaking of the wafer W is completed.
圖6所示之分斷裝置10b是分斷裝置的第3例,其具備有工作夾台30,該工作夾台30具備夾持保持環狀框架之夾持保持機構302。具體來說,工作夾台30具備有框體300、晶圓保持部301,及夾持保持環狀框架F之夾持保持機構302。 在框體300的下部連接有使工作夾台30朝預定方向旋轉之旋轉手段32。在晶圓保持部301上,是通過形成於框體300內部之吸引通道306而連通於吸引源33。在晶圓保持部301的吸引面301a上具備有與圖4及圖5所示之分斷裝置10a的多孔質層21相同的多孔質層31。 The breaking device 10b shown in Fig. 6 is a third example of the breaking device, and includes a working chuck 30 having a holding and holding mechanism 302 that sandwiches and holds the annular frame. Specifically, the work chuck 30 includes a housing 300, a wafer holding portion 301, and a clamp holding mechanism 302 that sandwiches and holds the annular frame F. A rotating means 32 for rotating the work chuck 30 in a predetermined direction is connected to a lower portion of the casing 300. The wafer holding portion 301 communicates with the suction source 33 through a suction passage 306 formed inside the casing 300. The porous layer 31 which is the same as the porous layer 21 of the breaking device 10a shown in FIGS. 4 and 5 is provided on the suction surface 301a of the wafer holding portion 301.
夾持保持機構302至少是由載置環狀框架F之框架載置部303、安裝於框架載置部303之一端的軸部304,及以軸部304為中心旋轉且將已載置於框架載置部303上之環狀框架F固定的夾持部305所構成。 The clamp holding mechanism 302 is at least a frame mounting portion 303 on which the annular frame F is placed, a shaft portion 304 attached to one end of the frame mounting portion 303, and is rotated about the shaft portion 304 and placed on the frame. The holding portion 303 is formed by a clamping portion 305 to which the annular frame F is fixed.
接著說明關於分斷裝置10b的動作例。首先,如圖7所示,以工作夾台30保持工件組1。具體來說,是使黏著膠帶T朝上而將晶圓W的表面Wa側載置於多孔質層31上,並將環狀框架F載置於框架載置部303上。接著,以軸部304為中心使夾持部305旋轉,並按壓環狀框架F的上部以進行固定。 Next, an operation example of the breaking device 10b will be described. First, as shown in FIG. 7, the workpiece group 1 is held by the work chuck 30. Specifically, the surface Wa side of the wafer W is placed on the porous layer 31 with the adhesive tape T facing upward, and the annular frame F is placed on the frame mounting portion 303. Next, the sandwiching portion 305 is rotated about the shaft portion 304, and the upper portion of the annular frame F is pressed to be fixed.
以工作夾台30保持工件組1之後,使按壓構件14的前端部14a定位成與朝向圖1(a)所示之Y軸方向之晶圓W的分割預定線S相對,並藉由按壓手段15使按壓構件14朝-Z方向下降,而利用按壓構件14的前端部14a從黏著膠帶T側按壓晶圓W。此時,會随著施加於晶圓W上的荷重而使多孔質層31凹陷,並使晶圓W的表面Wa側朝向多孔質層31進行按壓擴張,使晶圓W以分割起點6為起點而被分割。並且,與分斷裝置10a同樣地,在已沿著所有的分割起點6都分割過之時,藉由按壓手段15使按壓構件14朝+Z方向上昇, 即結束對晶圓W的分斷。 After the workpiece set 1 is held by the work chuck 30, the front end portion 14a of the pressing member 14 is positioned opposite to the planned dividing line S of the wafer W in the Y-axis direction shown in FIG. 1(a), and is pressed by means of pressing When the pressing member 14 is lowered in the -Z direction, the wafer W is pressed from the adhesive tape T side by the distal end portion 14a of the pressing member 14. At this time, the porous layer 31 is recessed in accordance with the load applied to the wafer W, and the surface Wa side of the wafer W is pressed and expanded toward the porous layer 31, and the wafer W is started from the division starting point 6. And is divided. Further, similarly to the breaking device 10a, when all the dividing starting points 6 have been divided, the pressing member 15 is raised in the +Z direction by the pressing means 15. That is, the breaking of the wafer W is completed.
如以上所述,在分斷裝置10a、10b中,由於在工作夾台20、30的吸引面201a、301a上具備了以會因按壓構件14之按壓而凹陷的預定的硬度所形成之多孔質層21、31,因此,當以按壓構件14按壓隔著多孔質層21、31被工作夾台20、30所保持之晶圓W時,多孔質層21、31本身就會沿著分割預定線S凹陷,因此就算不在吸引面201a、301a上設置對應分割預定線S之線狀的空間,也可沿著分割預定線S確實地分斷晶圓W。 As described above, in the breaking devices 10a and 10b, the suction faces 201a and 301a of the work chucks 20 and 30 are provided with a porous body formed by a predetermined hardness which is recessed by the pressing of the pressing member 14. Since the layers 21 and 31 are pressed by the pressing member 14 against the wafer W held by the working nips 20 and 30 via the porous layers 21 and 31, the porous layers 21 and 31 themselves are along the dividing line. Since the S is recessed, even if a linear space corresponding to the planned dividing line S is not provided on the attraction faces 201a and 301a, the wafer W can be surely divided along the planned dividing line S.
1‧‧‧工件組 1‧‧‧Workpieces
10‧‧‧分斷裝置 10‧‧‧ Breaking device
11‧‧‧工作夾台 11‧‧‧Working table
110‧‧‧框體 110‧‧‧ frame
111‧‧‧晶圓保持部 111‧‧‧ Wafer Holder
111a‧‧‧吸引面 111a‧‧‧Attraction
112‧‧‧框架保持部 112‧‧‧Framekeeping Department
113‧‧‧第1吸引通道 113‧‧‧1st attraction channel
114‧‧‧第2吸引通道 114‧‧‧2nd attraction channel
12‧‧‧旋轉手段 12‧‧‧Rotating means
13‧‧‧吸引源 13‧‧‧Attraction source
14‧‧‧按壓構件 14‧‧‧Resisting members
14a‧‧‧前端部 14a‧‧‧ front end
15‧‧‧按壓手段 15‧‧‧Measure means
16‧‧‧分度進給手段 16‧‧‧Divided feeding means
17‧‧‧多孔質板 17‧‧‧Porous board
6‧‧‧分割起點 6‧‧‧ starting point
F‧‧‧環狀框架 F‧‧‧Ring frame
T‧‧‧黏著膠帶 T‧‧‧Adhesive tape
W‧‧‧晶圓 W‧‧‧ wafer
Wa‧‧‧表面 Wa‧‧‧ surface
Wb‧‧‧背面 Wb‧‧‧ back
+X、+Y、-Y、+Z、-Z‧‧‧方向 +X, +Y, -Y, +Z, -Z‧‧‧ directions
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| JP2014164763A JP2016040810A (en) | 2014-08-13 | 2014-08-13 | Breaking device |
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| KR20190092926A (en) | 2018-01-31 | 2019-08-08 | 가부시기가이샤 디스코 | Wafer processing method |
| JP7020675B2 (en) * | 2018-02-26 | 2022-02-16 | 三星ダイヤモンド工業株式会社 | Wafer with Low-k film splitting method |
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| JP2556856Y2 (en) * | 1991-07-10 | 1997-12-08 | 株式会社ディスコ | Frame clamping mechanism in dicing machine |
| JPH08236484A (en) * | 1995-02-28 | 1996-09-13 | Hitachi Ltd | Method and apparatus for breaking semiconductor wafer |
| JP3088327B2 (en) * | 1997-03-24 | 2000-09-18 | 鹿児島日本電気株式会社 | Glass substrate cutting method |
| JP2003197581A (en) * | 2001-10-18 | 2003-07-11 | Fujitsu Ltd | Plate-like support member and method of using the same |
| JP2009148982A (en) | 2007-12-20 | 2009-07-09 | Daitron Technology Co Ltd | Braking device |
| JP5948032B2 (en) | 2011-09-09 | 2016-07-06 | 株式会社ディスコ | Braking device |
| JP2013038434A (en) | 2012-09-13 | 2013-02-21 | Daitron Technology Co Ltd | Braking device |
| JP6043149B2 (en) * | 2012-10-29 | 2016-12-14 | 三星ダイヤモンド工業株式会社 | Breaking device for brittle material substrate and method for breaking brittle material substrate |
| JP2016505483A (en) * | 2012-11-28 | 2016-02-25 | コーニング インコーポレイテッド | Pad, scribing mark forming method, and glass sheet cutting method |
-
2014
- 2014-08-13 JP JP2014164763A patent/JP2016040810A/en active Pending
-
2015
- 2015-06-24 TW TW104120321A patent/TW201606868A/en unknown
- 2015-07-22 KR KR1020150103676A patent/KR20160020351A/en not_active Withdrawn
- 2015-08-07 CN CN201510482967.2A patent/CN105374708A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160020351A (en) | 2016-02-23 |
| CN105374708A (en) | 2016-03-02 |
| JP2016040810A (en) | 2016-03-24 |
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