TW201606310A - Platinum-silicon composite tip applicable to field sensing and its preparation method - Google Patents
Platinum-silicon composite tip applicable to field sensing and its preparation method Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 10
- 238000002360 preparation method Methods 0.000 title abstract description 8
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 title abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 113
- 239000000523 sample Substances 0.000 claims abstract description 92
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 55
- 239000002086 nanomaterial Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 238000000137 annealing Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000002243 precursor Substances 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 230000002708 enhancing effect Effects 0.000 claims abstract 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000002715 modification method Methods 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000010079 rubber tapping Methods 0.000 claims description 4
- -1 fluoride ions Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- UPIXZLGONUBZLK-UHFFFAOYSA-N platinum Chemical compound [Pt].[Pt] UPIXZLGONUBZLK-UHFFFAOYSA-N 0.000 claims 1
- 238000000313 electron-beam-induced deposition Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 238000003487 electrochemical reaction Methods 0.000 abstract description 2
- 230000005669 field effect Effects 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 abstract description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000000386 microscopy Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- HWLDNSXPUQTBOD-UHFFFAOYSA-N platinum-iridium alloy Chemical compound [Ir].[Pt] HWLDNSXPUQTBOD-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010938 white gold Substances 0.000 description 4
- 229910000832 white gold Inorganic materials 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005234 chemical deposition Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- MOAOBEKGMNGXJG-UHFFFAOYSA-N [Te].[Te].[Te].[Au].[Au] Chemical compound [Te].[Te].[Te].[Au].[Au] MOAOBEKGMNGXJG-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910002835 Pt–Ir Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- XKCXPFQPTBUKKQ-UHFFFAOYSA-N [Pt].NN Chemical compound [Pt].NN XKCXPFQPTBUKKQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ZOKDWBDDYVCACM-UHFFFAOYSA-N bismuth platinum Chemical compound [Pt].[Bi] ZOKDWBDDYVCACM-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- IAOQICOCWPKKMH-UHFFFAOYSA-N dithieno[3,2-a:3',2'-d]thiophene Chemical compound C1=CSC2=C1C(C=CS1)=C1S2 IAOQICOCWPKKMH-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- CFQCIHVMOFOCGH-UHFFFAOYSA-N platinum ruthenium Chemical compound [Ru].[Pt] CFQCIHVMOFOCGH-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- JOKPITBUODAHEN-UHFFFAOYSA-N sulfanylideneplatinum Chemical compound [Pt]=S JOKPITBUODAHEN-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
本發明係有關於一種應用於場感測之白金-矽複合針尖及其製備方法,尤指涉及一種以化學沉積法結合微波退火,可在白金奈米結構及矽探針針尖本體間形成局部白金矽化物層,特別係指具有良好之空間解析及靈敏度,可大幅提升針尖導電度及場感測空間解析度之能力者。The invention relates to a platinum-iridium composite needle tip applied to field sensing and a preparation method thereof, in particular to a method of chemical deposition combined with microwave annealing, which can form partial platinum between the platinum nanostructure and the probe tip body. The telluride layer, in particular, has the ability to have good spatial resolution and sensitivity, and can greatly improve the tip conductivity and field sensing spatial resolution.
在尖端材料之研究上,最主要之議題之一乃是在奈米尺度之二維光、電、磁、及機械性質量測。高場敏度掃描顯微術(Field Sensitive Scanning Probe Microscopic technology, FS-SPM),如靜電力顯微術(Electric Force Microscopy, EFM)、磁力顯微術(Magnetic Force Microscope, MFM)、及掃描電位顯微術(Scanning Kelvin Probe Microscopy, SKPM)等,雖然可以提供材料之局部表面電位、電場及磁場等性質;但是量測奈米尺度之各項性質時,卻受限於空間解析度之限制。一般而言,FS-SPM之空間解析度以及靈敏度與針尖之幾何形貌與尺寸有重大之關聯,又傳統之FS-SPM乃是由原子力顯微鏡(Atomic Force Microscope, AFM)針尖鍍上一導電金屬膜而成,因針尖之場感測截面積太大,進而無法避免雜散場現象(Stray Field Effect, SFE)。One of the most important topics in the study of cutting-edge materials is the two-dimensional optical, electrical, magnetic, and mechanical quality measurements at the nanometer scale. Field Sensitive Scanning Probe Microscopic Technology (FS-SPM), such as Electroforce Force Microscopy (EMM), Magnetic Force Microscope (MFM), and scanning potential Microscopy (Scanning Kelvin Probe Microscopy, SKPM), etc., can provide properties such as local surface potential, electric field and magnetic field of materials; however, when measuring the properties of nanometer scale, it is limited by the limitation of spatial resolution. In general, the spatial resolution and sensitivity of FS-SPM are significantly related to the geometry and size of the tip. The traditional FS-SPM is coated with a conductive metal by the Atomic Force Microscope (AFM) tip. The film is formed, because the field of view of the tip of the needle is too large, and the stray field effect (SFE) cannot be avoided.
為降低SFE,許多探針針尖修飾之方法已經被提出,包含美國專利US757300揭露利用蝕刻方式製造高深寬比之針尖奈米線修飾;US5171992揭露利用離子束輔助沉積高深寬比奈米結構於碳基材上;及歐洲專利EP1744143揭露利用電子束聚焦於有鍍膜之探針針尖,用以成長奈米線。然而,上述以能量束或乾式蝕刻為基礎之技術皆需要高真空設備,不利於大量生產。而利用濕式化學製程修飾針尖則具有低成本及利於大量製造之優勢,如H.M. Lin於2010年提出之論文(H.-M. Lin, M.-N. Chang, Y.-S. Lin, and C.-C. Cheng, "The Manufacturing of a Metallic Nano-Cluster at a Tip Apex for Field-Sensitive Microscopy Applications," Journal of Nanoscience and Nanotechnology, vol. 10, pp. 4459-4464, 2010),其揭露利用奈米顆粒針尖以減少SFE,此方法同時取得中華民國專利I287089號;其他電沉積化學修飾方式,如美國專利US7955486及US7507320等技術皆需要於針尖施加電壓而達成金屬修飾效果。2012年C.-T. Lin等人於美國專利US13799941提出一種在含氟離子環境中之無電鍍技術,以沉積金屬奈米結構於矽探針尖端之方法。然而,前述各先前技術無論電鍍、無電鍍或電子束誘發沉積(Electron Beam Induced Deposition, EBID)等方式皆存在金屬-矽探針間電子傳輸效率低落之問題,進而嚴重影響場感測效率。In order to reduce SFE, a number of methods for tip modification of probes have been proposed, including US Pat. No. 757,300, which discloses the use of etching to produce high aspect ratio tip nanowires. US5171992 discloses the use of ion beam to assist in the deposition of high aspect ratio nanostructures on carbon substrates. And the European patent EP 1 744 143 discloses the use of an electron beam to focus on a coated probe tip for growing a nanowire. However, the above techniques based on energy beam or dry etching require high vacuum equipment, which is not conducive to mass production. The use of wet chemical processes to modify the tip has the advantages of low cost and large manufacturing advantages, such as the paper presented by HM Lin in 2010 (H.-M. Lin, M.-N. Chang, Y.-S. Lin, And C.-C. Cheng, "The Manufacturing of a Metallic Nano-Cluster at a Tip Apex for Field-Sensitive Microscopy Applications," Journal of Nanoscience and Nanotechnology, vol. 10, pp. 4459-4464, 2010), which discloses The nanoparticle tip is used to reduce the SFE. This method also obtains the Republic of China Patent No. I287089. Other techniques such as electrodeposition chemical modification, such as U.S. Patent No. 7,955,486 and U.S. Patent 7,073,320, require a voltage application at the tip to achieve a metal modification effect. In U.S. Patent No. 1,379,941 to C.-T. Lin et al., a method of electroless plating in a fluorine-containing ion environment to deposit a metal nanostructure on the tip of a probe is proposed. However, each of the foregoing prior art methods, such as electroplating, electroless plating, or Electron Beam Induced Deposition (EBID), has a problem of low electron transfer efficiency between metal-germanium probes, thereby seriously affecting field sensing efficiency.
先前技術雖有提出利用金屬矽化物(Metal Silicide)改善針尖導電度(Conductive Tips)之方法,如IBM於美國專利US6139759及US6198300所主張之鈦矽化物(TiSi2 )針尖(此技術場感測範圍過大,導致雜散場現象);IBM於美國專利US8332961提出之白金矽化物(PtSi)針尖結構、及HP於美國專利US7142449主張之金屬矽化物讀取頭等。但各先前技術多以傳統爐管退火方式形成金屬矽化物,整體加溫對於奈微米元件整體之影響甚鉅,少有關於針尖局部退火之報導。本案申請人雖於2013年已提出銀(Ag)修飾矽針尖並搭配微波退火(Microwave Annealing, MWA)增強場感測能力,但銀於環境中即容易硫化或氧化,將嚴重影響探針使用壽命,進而不利於半導體檢測產業之實務應用。故,ㄧ般習用者係無法符合使用者於實際使用時之所需。The prior art has proposed a method for improving the tip of the tip by using metal silicide, such as the titanium telluride (TiSi 2 ) tip proposed by IBM in US Pat. No. 6,139,759 and US Pat. No. 6,1983,000. Too large, resulting in a stray field phenomenon; a platinum telluride (PtSi) tip structure proposed by IBM in U.S. Patent No. 8,332,692, and a metal telluride read head as claimed in U.S. Patent No. 7,142,449. However, each of the prior art forms a metal telluride by a conventional furnace tube annealing method, and the overall heating has a great influence on the whole of the nano-nano component, and there is little report on the local annealing of the tip. Although the applicant of this case proposed silver (Ag) modified enamel tip in 2013 and combined with microwave annealing (MWA) to enhance the field sensing capability, silver is easily vulcanized or oxidized in the environment, which will seriously affect the service life of the probe. This is not conducive to the practical application of the semiconductor testing industry. Therefore, the user-like users cannot meet the needs of the user in actual use.
本發明之主要目的係在於,克服習知技藝所遭遇之上述問題並提供一種以化學沉積法結合微波退火,可在白金奈米結構及矽探針針尖本體間形成局部白金矽化物層,具有良好之空間解析及靈敏度,可大幅提升針尖導電度及場感測空間解析度之能力者。The main object of the present invention is to overcome the above problems encountered in the prior art and to provide a partial deposition of a white gold telluride layer between a platinum nanostructure and a probe tip body by chemical deposition combined with microwave annealing. The spatial resolution and sensitivity can greatly improve the ability of the tip tip conductivity and field sensing spatial resolution.
為達以上之目的,本發明係一種應用於場感測之白金-矽複合針尖及其製備方法,其中:For the purpose of the above, the present invention is a platinum-iridium composite needle tip applied to field sensing and a preparation method thereof, wherein:
所提一種白金-白金矽化物-矽複合場感測探針針尖結構,係包括:一矽探針針尖;一白金奈米結構,係成長於該矽探針針尖上;以及一局部白金矽化物層,係介於該矽探針針尖與該白金奈米結構之間,用於提升針尖場感測解析能力。A white gold-platinum telluride-iridium composite field sensing probe tip structure includes: a probe tip; a platinum nanostructure, which grows on the tip of the probe; and a partial platinum telluride The layer is between the tip of the probe probe and the structure of the platinum nanometer, and is used for improving the sensing capability of the needle tip field.
於本發明上述實施例中,該白金奈米結構之粒徑係介於25nm至35nm之間。In the above embodiment of the invention, the platinum nanostructure has a particle size of between 25 nm and 35 nm.
所提一種場感測探針針尖修飾方法,其至少包含下列步驟:(A)於一矽探針針尖上沉積一白金奈米結構;以及(B)將該矽探針於微波加熱下操作,使該白金奈米結構及該矽探針針尖間形成一局部白金矽化物層。A field sensing probe tip modification method comprising at least the steps of: (A) depositing a platinum nanostructure on a probe tip; and (B) operating the probe under microwave heating, A white gold telluride layer is formed between the platinum nanostructure and the tip of the probe.
於本發明上述實施例中,該步驟(A)於該矽探針針尖上沉積之白金奈米結構,係進一步包括下列步驟:(a1)於一基材上提供與氟離子混合之金屬前驅物溶液;以及(a2)控制該矽探針針尖在含有該金屬前驅物溶液之基材上進行侷限範圍掃描,以將金屬還原於該矽探針針尖上並利用該基材表面結構侷限所修飾金屬之尺寸。In the above embodiment of the present invention, the step (A) of depositing the platinum nanostructure on the tip of the probe probe further comprises the steps of: (a1) providing a metal precursor mixed with fluoride ions on a substrate. And (a2) controlling the probe tip of the crucible to perform a limited range scan on the substrate containing the metal precursor solution to reduce the metal on the probe tip of the crucible and to modify the metal by using the surface structure of the substrate The size.
於本發明上述實施例中,該微波加熱係於一氣體環境成分為大氣中操作之大氣微波退火(atmospheric Microwave Annealing, a-MWA)。In the above embodiment of the present invention, the microwave heating is performed on an atmospheric microwave annealing (a-MWA) in which a gaseous environmental component is operated in the atmosphere.
於本發明上述實施例中,該微波加熱係以500W至1800W之功率操作60秒至120秒之時間。In the above embodiment of the invention, the microwave heating is operated at a power of 500 W to 1800 W for a period of 60 seconds to 120 seconds.
於本發明上述實施例中,該微波加熱係以分段微波之方式進行加熱。In the above embodiment of the invention, the microwave heating is performed by means of segmented microwaves.
於本發明上述實施例中,該微波加熱係以單段微波之方式進行加熱。In the above embodiment of the invention, the microwave heating is performed by means of a single-stage microwave.
於本發明上述實施例中,該基材上係具有多數孔洞,用以承載該金屬前驅物溶液。In the above embodiment of the invention, the substrate has a plurality of holes for carrying the metal precursor solution.
於本發明上述實施例中,該金屬前驅物溶液係由六氯白金酸(H2 PtCl6 )及緩衝氧化蝕刻劑(Buffered Oxide Etchant, BOE)組成。In the above embodiment of the invention, the metal precursor solution is composed of hexachloroplatinic acid (H 2 PtCl 6 ) and a Buffered Oxide Etchant (BOE).
於本發明上述實施例中,該步驟(a2)係在輕敲模式(Tapping Mode)下掃描5秒至10秒。In the above embodiment of the present invention, the step (a2) is scanning in a tapping mode for 5 seconds to 10 seconds.
於本發明上述實施例中,該步驟(a2)金屬還原於該矽探針針尖上係採用局部氟化物輔助電置換反應(Localized Fluoride Assisted Galvanic Replacement Reaction, LFAGRR)進行。In the above embodiment of the present invention, the metal reduction of the step (a2) is performed on the tip of the probe tip by a Localized Fluoride Assisted Galvanic Replacement Reaction (LFAGRR).
1‧‧‧矽探針1‧‧‧矽 probe
11‧‧‧針尖11‧‧‧Needle
12‧‧‧白金奈米結構12‧‧‧White gold nanostructure
13‧‧‧局部白金矽化物層13‧‧‧Local Platinum Telluride Layer
2‧‧‧基材2‧‧‧Substrate
21‧‧‧孔洞21‧‧‧ holes
3‧‧‧金屬前驅物溶液3‧‧‧Metal precursor solution
4‧‧‧微波爐4‧‧‧ microwave oven
S11~S12‧‧‧步驟S11~S12‧‧‧Steps
S111~S112‧‧‧步驟S111~S112‧‧‧Steps
第1圖,係本發明之場感測探針針尖修飾方法流程示意圖。Fig. 1 is a flow chart showing the method for modifying the tip of the field sensing probe of the present invention.
第2圖,係本發明於矽探針針尖上沉積白金奈米結構之流程意圖。Fig. 2 is a flow chart of the present invention for depositing a platinum nanostructure on a probe tip of a crucible.
第3圖,係本發明之場感測探針針尖修飾過程之示意圖。Figure 3 is a schematic illustration of the process of tip modification of the field sensing probe of the present invention.
第4圖,係本發明於微波退火前之探針針尖構造圖。Fig. 4 is a view showing the configuration of a probe tip of the present invention before microwave annealing.
第5圖,係本發明於微波退火後之矽-白金界面TEM繞射圖。Figure 5 is a TEM diffraction diagram of the ruthenium-platinum interface after microwave annealing of the present invention.
第6圖,係本發明與其它探針之場感測能力比較示意圖。Figure 6 is a schematic diagram comparing the field sensing capabilities of the present invention with other probes.
請參閱『第1圖~第6圖』所示,係分別為本發明之場感測探針針尖修飾方法流程示意圖、本發明於矽探針針尖上沉積白金奈米結構之流程意圖、本發明之場感測探針針尖修飾過程之示意圖、本發明於微波退火前之探針針尖構造圖、本發明於微波退火後之矽-白金界面TEM繞射圖、以及本發明與其它探針之場感測能力比較示意圖。如圖所示:本發明係一種應用於場感測之白金-矽複合針尖及其製備方法,係以大氣微波退火(atmospheric Microwave Annealing, a-MWA)製程,在一白金奈米結構12及一矽探針1針尖11本體間形成一局部白金矽化物層(Pt-Si)13,利用該局部白金矽化物層13修飾該矽探針1針尖11,以大幅提升場感測能力。Please refer to FIG. 1 to FIG. 6 , which are schematic diagrams showing the flow of the method for modifying the tip of the field sensing probe of the present invention, and the flow of the invention for depositing a platinum nanostructure on the tip of the probe tip of the present invention. The schematic diagram of the probe tip modification process of the field, the probe tip configuration diagram of the present invention before microwave annealing, the TEM-platinum interface TEM diffraction pattern of the present invention after microwave annealing, and the field of the present invention and other probes A comparison of sensing capabilities. As shown in the figure: the present invention is a platinum-iridium composite tip applied to field sensing and a preparation method thereof, which is subjected to an atmospheric microwave annealing (a-MWA) process, in a platinum nanostructure 12 and a A partial platinum telluride layer (Pt-Si) 13 is formed between the body of the probe 1 tip 11 and the tip of the probe 1 is modified by the local platinum telluride layer 13 to greatly enhance the field sensing capability.
以局部白金矽化物層修飾矽探針針尖(Modified Silicon Tip Apex, MSTA)之製造過程如第1~3圖所示:The manufacturing process of modified Silicon Tip Apex (MSTA) with a partial platinum telluride layer is shown in Figures 1 to 3:
首先進行步驟S11,於一矽探針1針尖11上沉積一白金奈米結構12,其粒徑係介於25nm至35nm之間。First, step S11 is performed to deposit a platinum nanostructure 12 on the probe tip 11 of the probe 1 having a particle size of between 25 nm and 35 nm.
上述步驟S11係進一步包括子步驟S111,於一基材2上之數個孔洞21中提供與氟離子混合之金屬前驅物溶液3。接著進行子步驟S112,控制該矽探針1針尖11在含有該金屬前驅物溶液3之基材2上以輕敲模式(Tapping Mode)進行侷限範圍掃描5秒至10秒;藉由上述子步驟S111與S112,將金屬還原於該矽探針1針尖11上並利用該基材2表面結構侷限所修飾金屬之尺寸。其中,該基材2係為氧化鋁,且承載於該基材2孔洞21中之金屬前驅物溶液3係由六氯白金酸(H2 PtCl6 )及緩衝氧化蝕刻劑(Buffered Oxide Etchant, BOE)組成。The above step S11 further includes a sub-step S111 of providing a metal precursor solution 3 mixed with fluorine ions in a plurality of holes 21 in a substrate 2. Next, sub-step S112 is performed to control the tip 11 of the probe 1 to perform a limited range scan in the tapping mode on the substrate 2 containing the metal precursor solution 3 for 5 seconds to 10 seconds; S111 and S112, the metal is reduced on the tip 11 of the probe 1 and the size of the metal modified by the surface structure of the substrate 2 is used. Wherein, the substrate 2 is alumina, and the metal precursor solution 3 carried in the pores 21 of the substrate 2 is composed of hexachloroplatinic acid (H 2 PtCl 6 ) and a buffered oxidizing etchant (Buffered Oxide Etchant, BOE). )composition.
最後進行步驟S12,將該矽探針1置於一微波爐4中,以500W至1800W之功率操作60秒至120秒之時間進行微波加熱,使該白金奈米結構12及該矽探針1針尖11之間形成一局部白金矽化物層13,用於提升該矽探針1針尖11場感測解析能力。其中該微波加熱係可以 分段微波或單 段微波之方式進行加熱。如是,藉由上述揭露之結構與流程構成一全新之應用於場感測之白金-矽複合針尖及其製備方法。Finally, in step S12, the cymbal probe 1 is placed in a microwave oven 4, and is operated at a power of 500 W to 1800 W for 60 seconds to 120 seconds for microwave heating to make the platinum nanostructure 12 and the 矽 probe 1 tip. A partial platinum telluride layer 13 is formed between the 11 to enhance the analytical ability of the 矽 probe 1 tip 11 field sensing. The microwave heating system can be heated by segmented microwave or single-stage microwave. If so, the new structure and process disclosed above constitute a new platinum-iridium composite tip for field sensing and a preparation method thereof.
於一具體實施例中,本發明係以16%緩衝氧化蝕刻劑與 0.01M六氯白金酸混合為金屬前驅物溶液3。在室溫22°C下,以半接觸式(即輕敲模式)掃描模式,使n型矽探針1與該金屬前驅物溶液3反應,沉積300秒之時間,完成白金奈米結構矽探針修飾,尺寸為32奈米。如第4圖所示,圖中(a)與(b)代表白金奈米結構修飾矽探針針尖之SEM圖,而(c)代表對應(b)之EDS分析,(d)與(e)則代表經由局部氟化物輔助電置換反應(Localized Fluoride Assisted Galvanic Replacement Reaction, LFAGRR)而在平面矽上生長白金奈米結構之TEM圖,其反應式如下:In one embodiment, the invention is a mixture of a 16% buffered oxidizing etchant and 0.01 M hexachloroplatinic acid as the metal precursor solution 3. The n-type krypton probe 1 was reacted with the metal precursor solution 3 in a half-contact (ie, tapping mode) scanning mode at room temperature 22 ° C, and deposition was performed for 300 seconds to complete the structure of the platinum nanostructure. The needle is modified to a size of 32 nm. As shown in Fig. 4, (a) and (b) represent SEM images of the tip of the platinum-modified 矽 probe tip, and (c) represents the EDS analysis corresponding to (b), (d) and (e) It represents a TEM image of a white gold nanostructure grown on a planar crucible via a Localized Fluoride Assisted Galvanic Replacement Reaction (LFAGRR). The reaction formula is as follows:
Si+6HF→H2 SiF6 +4H+ +4e- Si+6HF→H 2 SiF 6 +4H + +4e -
Pt4+ +4e- →PtPt 4+ +4e - →Pt
由此可知,本發明在尚未微波時,由不同設備進行量測皆顯示為白金,證明有一白金奈米結構成長在矽探針針尖上。 接著,將上述已成長白金奈米結構之矽探針置於家用微波爐4內進行大氣退火,在退火條件為1800 W,60秒至90秒後,得到局部白金矽化物層。如第5圖所示,圖中(a)與(e)係局部白金矽化物層修飾矽探針針尖之SEM圖,(b)、(d)、(f)與(h)係局部白金矽化物層修飾矽探針針尖之TEM圖,而(c)與(g)係分別來自(b)與(f)之選區繞射(SAD)圖,其中(a)至(d)及(e)至(h)之大氣微波退火時間分別為60秒與90秒。因此,第5圖中(a)至(h)皆顯示置入微波爐退火後之白金奈米結構仍在,形成局部白金矽化物(Pt-Si),證明在白金奈米結構與矽探針針尖間形成有一局部白金矽化物層。It can be seen that the present invention is displayed as platinum in the absence of microwaves, and is measured by different devices, and it is proved that a platinum nanostructure is grown on the tip of the probe. Next, the above-mentioned grown platinum nanostructured probe was placed in a microwave oven 4 for atmospheric annealing, and after annealing conditions of 1800 W for 60 seconds to 90 seconds, a partial platinum telluride layer was obtained. As shown in Fig. 5, (a) and (e) are the SEM images of the local platinum hydrazine layer modified 矽 probe tip, and (b), (d), (f) and (h) are local platinum The TEM image of the tip of the probe is modified by the layer, and the (c) and (g) are derived from the diffraction pattern (SAD) of (b) and (f), respectively, where (a) to (d) and (e) The atmospheric microwave annealing time to (h) was 60 seconds and 90 seconds, respectively. Therefore, in (a) to (h) of Fig. 5, it is shown that the structure of the platinum nanocrystal after annealing in the microwave oven is still formed, forming a local platinum telluride (Pt-Si), which proves that the structure of the platinum nano-structure and the probe tip of the ruthenium A partial platinum telluride layer is formed therebetween.
而此局部白金矽化物層在場感測能力之提升已透過掃描電位顯微術(Scanning Kelvin Probe Microscopy, SKPM)驗證,如第6圖所示之表面電位掃描結果,圖中(a)與(b)為習用以純矽取得之SKPM圖,(c)與(d)為習用以白金-銥(Pt-Ir)覆蓋矽探針針尖取得之SKPM圖,而(e)與(f)及(g)與(h)分別為本發明在微波退火60秒與90秒後以局部白金矽化物層修飾矽探針針尖取得之SKPM圖。由(a)至(h)之SKPM比較可知,本發明對於奈米材料表面電位之解析能力最好,局部白金矽化物層具有相較於商用探針或沒有修飾之前之探針有較好之表面電場解析能力,足以證明本發明在白金奈米結構及矽探針針尖本體間形成局部白金矽化物層,係具有良好之空間解析及靈敏度,可大幅提升場感測解析能力,適用於可控制性、高空間解析度之導電探針使用。The improvement of the field sensing capability of the local platinum telluride layer has been verified by scanning potential microscopy (Scanning Kelvin Probe Microscopy, SKPM). The surface potential scanning results shown in Fig. 6 are shown in (a) and ( b) for the SKPM maps obtained from the pure enthalpy, (c) and (d) are the SKPM maps obtained from the probe tip of the Platinum-铱 (Pt-Ir) overlay, and (e) and (f) and (g) And (h) are SKPM patterns obtained by modifying the 矽 probe tip with a partial platinum telluride layer after microwave annealing for 60 seconds and 90 seconds, respectively. From the comparison of SKPM of (a) to (h), the present invention has the best analytical ability for the surface potential of the nano material, and the local platinum telluride layer has better performance than the commercial probe or the probe without modification. The surface electric field resolution capability is sufficient to prove that the present invention forms a local platinum telluride layer between the platinum nanostructure and the probe tip body, which has good spatial resolution and sensitivity, and can greatly improve the field sensing and analysis capability, and is suitable for controllable. Conductive probes with high spatial resolution.
本發明以無電鍍模板沉積法(或電子束誘發沉積法(Electron Beam Induced Deposition, EBID)),利用金屬前驅物溶液與矽探針針尖之局部電化學反應,達成局部、選擇性且可精確控制之白金奈米結構沉積效果,再配合大氣微波退火製程,在白金奈米結構與矽探針針尖間形成局部白金矽化物層,大幅提升針尖導電度及場感測空間解析度之能力,可作為高場敏度掃描顯微術(Field Sensitive Scanning Probe Microscopic technology, FS-SPM)之探針,除了可避免雜散場現象而有更良好之影像品質,含白金矽化物之探針尖端會比僅有白金奈米結構之探針尖端更有效提升介面電子傳輸效率。藉此,本發明所提之應用於場感測之白金-矽複合針尖及其製備方法,係具有下列優勢:The invention adopts an electroless template deposition method (or Electron Beam Induced Deposition (EBID)) to achieve local, selective and precise control by using a local electrochemical reaction between a metal precursor solution and a ruthenium probe tip. The deposition effect of the platinum nanostructure is combined with the atmospheric microwave annealing process to form a local platinum sulphide layer between the platinum nanostructure and the tip of the ruthenium probe tip, which greatly enhances the tip conductivity and the field sensing spatial resolution. The probe of the Field Sensitive Scanning Probe Microscopic Technology (FS-SPM) has better image quality in addition to avoiding stray field phenomenon. The tip of the probe containing platinum telluride will be better than the probe. The probe tip of the platinum nanostructure is more effective in improving the electron transport efficiency of the interface. Therefore, the platinum-iridium composite needle tip applied to the field sensing and the preparation method thereof have the following advantages:
1.低成本(家用微波爐即可完成)。1. Low cost (complete in a home microwave oven).
2.短時間(2分鐘內完成)。2. Short time (completed in 2 minutes).
3.大氣條件操作。3. Operating at atmospheric conditions.
4.低溫製程。4. Low temperature process.
5.高均勻性(穩定控制)。5. High uniformity (stable control).
6.維持探針針尖形貌。6. Maintain the tip of the probe tip.
7.介面形成白金矽化物,大幅提升導電率。7. The interface forms platinum telluride, which greatly increases the conductivity.
8.介面之白金矽化物之形成使白金更近一步固定於矽基材上。8. The formation of the interface platinum telluride allows the platinum to be more closely immobilized on the tantalum substrate.
9.大幅提升場感測效能。9. Significantly improve field sensing performance.
10.相較於銀針尖有抗氧化與抗硫化之優勢。10. Compared with the silver tip, it has the advantages of oxidation resistance and vulcanization resistance.
綜上所述,本發明係一種應用於場感測之白金-矽複合針尖及其製備方法,可有效改善習用之種種缺點,以化學沉積法結合微波退火,可在白金奈米結構及矽探針針尖本體間形成局部白金矽化物層,具有良好之空間解析及靈敏度,可大幅提升針尖導電度及場感測空間解析度之能力,進而使本發明之産生能更進步、更實用、更符合使用者之所須,確已符合發明專利申請之要件,爰依法提出專利申請。In summary, the present invention is a platinum-iridium composite tip applied to field sensing and a preparation method thereof, which can effectively improve various disadvantages of the conventional use, and can be combined with microwave annealing by chemical deposition method, and can be used in the structure and exploration of platinum. A partial platinum bismuth layer is formed between the needle tip bodies, which has good spatial resolution and sensitivity, and can greatly improve the ability of the tip tip conductivity and the field sensing spatial resolution, thereby making the invention more progressive, practical and more consistent. The user must have met the requirements of the invention patent application and filed a patent application according to law.
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍;故,凡依本發明申請專利範圍及發明說明書內容所作之簡單的等效變化與修飾,皆應仍屬本發明專利涵蓋之範圍內。However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto; therefore, the simple equivalent changes and modifications made in accordance with the scope of the present invention and the contents of the invention are modified. All should remain within the scope of the invention patent.
Claims (12)
一矽探針針尖;
一白金奈米結構,係成長於該矽探針針尖上;以及
一局部白金矽化物層,係介於該矽探針針尖與該白金奈米結構之間,用於提升針尖場感測解析能力。A platinum-platinum telluride-iridium composite field sensing probe tip structure includes:
a probe tip;
a platinum nanostructure is grown on the tip of the probe; and a partial platinum telluride layer is interposed between the tip of the probe and the structure of the platinum nanometer for enhancing the sensing capability of the needle tip field .
(A)於一矽探針針尖上沉積一白金奈米結構;以及
(B)將該矽探針於微波加熱下操作,使該白金奈米結構及該矽探針針尖間形成一局部白金矽化物層。A method for modifying a field sensing probe tip includes at least the following steps:
(A) depositing a platinum nanostructure on a probe tip; and (B) operating the probe under microwave heating to form a portion of the platinum structure between the platinum nanostructure and the tip of the probe Layer of matter.
(a1)於一基材上提供與氟離子混合之金屬前驅物溶液;以及
(a2)控制該矽探針針尖在含有該金屬前驅物溶液之基材上進行侷限範圍掃描,以將金屬還原於該矽探針針尖上並利用該基材表面結構侷限所修飾金屬之尺寸。The field sensing probe tip modification method according to the third aspect of the patent application, wherein the step (A) depositing the platinum nanostructure on the tip of the probe probe further comprises the following steps:
(a1) providing a metal precursor solution mixed with fluoride ions on a substrate; and (a2) controlling the probe tip of the crucible to perform a limited range scan on the substrate containing the metal precursor solution to reduce the metal to The size of the metal modified by the surface of the probe tip is limited by the surface structure of the substrate.
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