TW201542847A - 硼摻雜的ｎ型矽靶材 - Google Patents
硼摻雜的ｎ型矽靶材 Download PDFInfo
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 238000005477 sputtering target Methods 0.000 claims description 17
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000000137 annealing Methods 0.000 abstract description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052902 vermiculite Inorganic materials 0.000 description 2
- 235000019354 vermiculite Nutrition 0.000 description 2
- 239000010455 vermiculite Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
本發明揭示濺鍍靶材及其製作方法。靶材包括硼摻雜的n型矽。靶材可以由CZ法所做的單晶之硼摻雜的p型矽鑄錠所做成。沿著晶體的長度來測量電阻率，並且可以垂直於鑄錠中央軸而在電阻率為大約1~20歐姆公分的位置切割出毛胚。然後將毛胚形成至可接受的形狀而適合使用作為PVD系統的濺鍍靶材。不在鑄錠或毛胚上進行去施體退火。
Description
本申請案主張2014年4月7日所提申的美國臨時專利申請案第61/976,094號的優先權。
本案有關用於形成含矽膜的濺鍍靶材以及有關製作此種靶材的方法。
各式各樣矽膜的物理氣相沉積(PVD)在半導體、電子、光伏應用領域是重要的。精確的膜組成和沉積均勻性在這些領域和其他領域是重要的。於許多情形，超純的單晶矽濺鍍靶材係用於直接濺鍍系統以例如形成純矽或矽摻雜的晶圓，或者矽靶材可以用於反應性濺鍍系統以形成所要的氧化矽、氮氧化矽或氮化矽膜。
使用p型矽的靶材壽命為短。在濺鍍p型矽靶材期間，矽產物會再次沉積在具有高電阻率的靶材表面上。這再沉積材料是具有n型傳導性的非晶形矽層。這不利的再沉積是例示地顯示於圖1。下表指出靶材再沉積位置、再沉積物的傳導類型和其他測量參數。
這再沉積在靶材表面上產生pn接面，其在偏壓下導致靶材
中存在應力，而引起靶材龜裂，因此減少靶材壽命。據此，想要藉由使用特定n型矽靶材來使靶材表面上形成的pn接面減到最少。
於本發明的一範例性具體態樣，提供的是濺鍍靶材，其包括硼摻雜的N型矽而具有大約0.01~700歐姆公分的電阻率。於其他具體態樣，靶材的電阻率是大約1~12歐姆公分。於某些具體態樣，矽具有大約0.1到大約200ppm的氧含量，並且於其他具體態樣，氧含量可以是從大約1到大約60ppm。於特定的具體態樣，靶材的硼含量是從大約0.01到大約1ppm。
本發明的其他方面包括以下所做的濺鍍靶材：獲得硼摻雜之
p型矽的單晶鑄錠，其具有的電阻率為大約1~60歐姆公分而包括至少在沿著鑄錠長度的一位置來測量鑄錠的電阻率。然後在電阻率範圍在大約1~20歐姆公分的那些鑄錠位置而從鑄錠形成或切片出毛胚。所選的毛胚不在大約400℃和更高做進一步熱處理。毛胚然後形成所要的形狀而使用作為濺鍍靶材。於其他具體態樣，所選的毛胚將具有大約1~12歐姆公分的電阻率。
於本發明的另外其他具體態樣，提供的是製作硼摻雜之p
型矽濺鍍靶材的方法。依據這些方法，包括硼的單晶矽鑄錠是以卓氏(Czochralski，CZ)法所製備。鑄錠提供有中央軸，其沿著鑄錠長度而延伸。
測量鑄錠的電阻率，並且其中所測量的電阻率是大約1~20歐姆公分，則從鑄錠切割出毛胚。較佳而言，垂直於鑄錠的中央軸來切割出這些毛胚。然後，將所要的形狀賦予給毛胚，如此則它們可以使用以濺鍍靶材。本方法的進一步特徵在於：在已經製備鑄錠之後，鑄錠沒有在400℃和更高做任何熱處理。於更進一步的具體態樣，經切割毛胚的電阻率是大約1~12歐姆公分。
本發明將配合所附圖式和以下較佳具體態樣的詳述來進一步描述。
圖1顯示形成在習用的p型矽濺鍍靶材上之不利的再沉積物的示意圖；圖2顯示氧熱施體在矽鑄錠材料中的效應的示意圖；以及圖3顯示鑄錠在退火之前和在去氧施體(oxygen donor killing，DK)退火之後的n型和p型部分之電阻率資料的圖形。
在高電阻率卓氏(CZ)矽鑄錠(範圍在1~100歐姆公分)的生長期間，從矽石坩鍋成長晶體時有一定量的間隙性氧併入並且形成氧熱施體於矽鑄錠材料中。氧熱施體的形成則強烈取決於由製程溫度所決定的間隙性氧濃度以及在固態矽石、液態矽、固態矽之間的平衡二者。為了提供一定的矽單晶電阻率(1~100歐姆公分)，一定量的硼摻雜物添加到矽。這添加的硼提供p型載子並且決定矽傳導性的p型性質。氧熱施體貢獻電子做傳導。視所產生的施體數目和p型載子的量而定，背景載子(硼)矽可以是n型(更多n型載子)或p型(更多p型載子)。於p型矽，氧熱施體增加矽的電阻率，直到熱施體濃度超過p型載子濃度(硼)為止，此時矽將顯得是n型。圖2例示性地顯示基於實驗資料的解釋示範熱施體對於典型而言用於這些靶材之22~33歐姆公分p型矽的影響以及對於變化間隙性氧程度和400℃退火次數的電阻率。
在CZ矽單晶成長期間，矽鑄錠的某個部分顯得是n型傳導性並且矽鑄錠的其他部分是p型傳導性。因為測量矽單晶的電阻率是更可靠的，所以我們在圖式中以圖3分別示範矽單晶電阻率和傳導類型的實際測量。此圖顯示在去施體(DK)退火之前，矽電阻率是由p和n型載子的組合所決定；而在DK退火之後，矽電阻率僅由根據硼濃度的正載子所決定。
於範例性具體態樣，本發明關於：
1.矽單晶之硼摻雜的材料，其具有肇因於未退火氧施體的n型傳導性，而電阻率範圍從0.01到700歐姆公分，較佳而言為1~12歐姆公分。
2.製造矽單晶之硼摻雜材料的方法，其具有肇因於未退火氧施體的n
型傳導性，而該方法所構成的生長條件藉由避免在300~800℃的去施體退火來允許保留氧施體。
3.長壽之矽靶材單晶硼摻雜的材料，其具有肇因於未退火氧施體的n型傳導性。
於一具體態樣，提供的是濺鍍靶材，其是硼摻雜的n型矽。
靶材的硼含量典型而言從大約0.001到1ppm，並且電阻率從大約1到700歐姆公分。最佳而言，電阻率是大約1~20歐姆公分，而更偏好的電阻率範圍是大約1~12歐姆公分。
雖然申請人不要受限於任何特殊的操作性理論，但是認為矽
基質中之間隙性氧的數量作用為熱施體以供應n型傳導性。關於此點，矽的氧含量範圍可以從大約0.1到200ppm，偏好的範圍是1到60ppm。
依據本方法的靶材可以由已經以傳統CZ法所製備的矽單晶
鑄錠來製造，其涉及起初矽熔融物而調適成提供硼摻雜的p型單晶矽，所具有的電阻率大約1~60歐姆公分，較佳而言大約22~33歐姆公分。傳統的CZ法舉例而言顯示於美國專利第8,961,685號，其併於此以為參考。於典型的CZ法，矽和硼摻雜物熔入石英坩鍋或類似者裡。安裝在桿上的晶種則浸沒到熔融物裡，並且慢慢往上拉和同時旋轉。此過程經常是在惰性氣體(例如氬)中進行。
一旦獲得鑄錠，則它不接受任何退火處理。反而是從鑄錠切
割出碟片或毛胚並且測量電阻率，如此則它落在上面給出的範圍裡。碟片或毛胚然後形成為所要的淨形狀，如此則它可以使用作為物理氣相沉積事物中的濺鍍靶材。
雖然前面係針對本發明的特定具體態樣，不過可以設計出本發明之其他和進一步的具體態樣，而不偏離所附請求項決定的範圍。
Claims (10)
- 一種濺鍍靶材，其包括硼摻雜的n型矽而具有大約0.01~700歐姆公分的電阻率。
- 如申請專利範圍第1項的濺鍍靶材，其中該電阻率是大約1~20歐姆公分。
- 如申請專利範圍第2項的濺鍍靶材，其中該電阻率是大約1~12歐姆公分。
- 如申請專利範圍第1項的濺鍍靶材，其中該矽具有大約0.1到大約200ppm的氧含量。
- 如申請專利範圍第4項的濺鍍靶材，其中該矽具有大約1到大約60ppm的氧含量。
- 如申請專利範圍第1項的濺鍍靶材，其具有大約0.001到1ppm的硼含量。
- 一種濺鍍靶材，其係以下方式而製作：獲得電阻率大約1~60歐姆公分的硼摻雜之p型矽的單晶鑄錠，而包括從該鑄錠形成毛胚；測量該毛胚的電阻率；選擇電阻率為大約1~20歐姆公分的毛胚，該等所選毛胚不在大約400℃和更高溫度下做進一步熱處理；以及將該毛胚形成適合使用作為濺鍍靶材的形狀。
- 如申請專利範圍第7項的濺鍍靶材，其中該選擇毛胚的步驟包括：選擇電阻率為大約1~12歐姆公分的毛胚。
- 一種製作硼摻雜之p型矽濺鍍靶材的方法，其包括：(a)獲得以卓氏(CZ)法所製備之包括硼的單晶矽鑄錠，該鑄錠具有中央 軸，(b)沿著該中央軸而在至少一位置來測量該鑄錠的電阻率，(c)沿著該中央軸來決定該電阻率是大約1~20歐姆公分的位置，(d)在該等決定位置(c)而從該鑄錠切割出毛胚，以及(e)賦予該等毛胚所要的形狀而適合使用作為濺鍍靶材，其中該方法在該步驟(a)之後沒有做400℃和更高溫度的熱處理。
- 如申請專利範圍第9項的方法，其中該步驟(c)包括決定電阻率為大約1~12歐姆公分的位置。
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| CN106676486B (zh) * | 2017-01-04 | 2021-05-07 | 青岛蓝光晶科新材料有限公司 | 一种超低阻硅靶材的生产方法 |
| EP3642633A4 (en) | 2017-06-21 | 2021-05-12 | Abbott Molecular Inc. | Methods of automatized sample loading and processing and devices and systems related thereto |
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