TW201545839A - Manufacturing method of chemical mechanical polishing trimmer - Google Patents

Abstract

A manufacturing method of chemical mechanical polishing trimmer. First, providing a temporary substrate, the temporary substrate comprising a rigid layer having a plane, and a conductive soft layer disposed on the plane; implanting a plurality of abrasive particles on the conductive soft layer, so that a polishing end provided at these abrasive particles can be inserted into the conductive soft layer to abut against the plane; forming a metal layer on the conductive soft layer to cover and fix the abrasive particles, the metal layer having a binding surface away from the temporary substrate; finally, removing the rigid layer and the conductive soft layer, and combining the binding surface with a polishing base to obtain a trimming tool, wherein the polishing ends of the abrasive particles have exposed heights of high consistency. Accordingly, the trimming tool manufactured by this invention can improve the polishing efficiency.

Description

Method for manufacturing chemical mechanical polishing dresser

The invention relates to a chemical mechanical polishing dresser, in particular to a method for manufacturing a chemical mechanical polishing dresser.

Wafer foundry is one of the most important industries in China. Before performing various chemical or physical processes on wafers, it must be surface-polished and planarized to flatten the surface of the wafer. The operation is called chemical mechanical polishing. A common CMP is to use a polishing pad (or polishing pad) that is attached to a rotating table to contact and apply a wafer to a spin-on carrier. After a period of use, the polishing pad must be trimmed through a dresser, including cutting the surface of the polishing pad to remove waste accumulated on the surface of the polishing pad, thereby maintaining the surface roughness of the polishing pad. degree. In the U.S. Patent No. 7,467,989, a ceramic polishing pad conditioner having a plastic base and a method of manufacturing the same are disclosed, which utilize a ceramic powder vitrification process to fix a plurality of abrasive particles on a ceramic substrate. Forming a ceramic diamond disc, and then mounting a plastic base on the bottom thereof, wherein the ceramic powder is vitrified by pre-forming a low melting ceramic powder on the ceramic substrate and heating to form a glass. Fixing the fixing layer to fix the abrasive particles disposed thereon to the ceramic substrate, and the plastic base of the bottom is used for carrying the ceramic diamond disc to facilitate forming corresponding screw holes and positioning holes to meet the desired A chemical mechanical polishing (CMP) machine is installed and can reduce production costs. However, the dresser performs a trimming operation on the polishing pad through the set abrasive particles. However, due to the different size and size of the abrasive particles, the protruding height cannot be consistent, and some of the abrasive particles are not effectively utilized. There is still room for improvement in the efficiency of the grinding.

The main object of the present invention is to solve the problem of the conventional chemical mechanical dresser in which the uniformity of the protruding heights of the plurality of abrasive particles is poor, resulting in poor grinding efficiency. In order to achieve the above object, the present invention provides a method for manufacturing a chemical mechanical polishing conditioner, comprising the steps of: providing a temporary substrate comprising a rigid layer having a plane and a conductive soft layer disposed on the plane; Depositing a plurality of abrasive particles on the conductive soft layer, and inserting a polished end of the abrasive particles into the conductive soft layer to interfere with the plane; forming a metal layer covering and fixing the abrasive particles on the conductive soft layer, The metal layer has a bonding surface away from the temporary substrate; and the rigid layer and the conductive soft layer are removed, and the bonding surface is combined with a polishing base to obtain a trimming tool, wherein the grinding end of the abrasive particle Has a high uniformity of exposed height. In this way, the chemical mechanical polishing dresser obtained by the manufacturing method of the present invention has the high uniformity of the exposed height of the polished end of the abrasive particles, so that each of the polishing ends is trimmed on a polishing pad. When working, it can be effectively utilized, and the efficiency of the dressing tool in grinding can be improved.

The detailed description and the technical content of the present invention will now be described with reference to the following drawings: Please refer to FIG. 1A to FIG. 1F, which are schematic diagrams showing a manufacturing process according to an embodiment of the present invention. A manufacturing method of a chemical mechanical polishing dresser for manufacturing a one-to-one polishing pad for performing a trimming operation, the manufacturing method comprising the following steps: Step 1: As shown in FIG. 1A, a temporary substrate 10 is provided. The temporary substrate 10 includes a rigid layer 11 and a conductive soft layer 12 having a flat surface 111. The rigid layer 11 can be made of steel, nickel, chromium, titanium, copper, aluminum or granite. , glass and acrylic. The conductive soft layer 12 is disposed on the plane 111 and includes a flexible substrate 122 contacting the plane 111 and a conductive surface 121 away from the plane 111. The material for forming the flexible substrate 122 may be a thermoplastic colloid material. For example, ethylene/vinyl acetate copolymer (EVA), polyethylene terephthalate (PET), polyethylene (PE), wax, etc., the conductive surface 121 can be palladium, nickel, chromium, titanium, gold, platinum. And copper, aluminum, carbon, stainless steel or a composition selected from the above, formed on the flexible substrate 122. Step 2: As shown in FIG. 1B, a plurality of abrasive particles 20 are implanted in the conductive soft layer 12, and the abrasive particles 20 include a sharp-edged grinding end 21 and a fixed end relatively away from the grinding end 21. 22, the grinding end 21 has an end point 211, wherein the abrasive particle 20 has a particle diameter of 100 um to 500 um and is larger than a thickness of the conductive soft layer 12, and may include at least one large abrasive particle 23 and at least A small abrasive particle 24 having a particle size smaller than the large abrasive particles, the abrasive particle 20 may be selected from the group consisting of synthetic diamond, natural diamond, polycrystalline diamond, cubic boron nitride, polycrystalline cubic boron nitride, or combinations thereof. In this embodiment, the implantation of the abrasive particles 20 is performed by using a template 30. The template 30 is arranged with a plurality of positioning holes 31 having corresponding apertures for inserting the abrasive particles 20, and 150 μ to 900 μm, the large abrasive particles 23 and the small abrasive particles 24 are inserted into the positioning hole 31, and the polishing end 21 is inserted into the conductive soft layer 12, and the end point 211 is in contact with the plane of the rigid layer 11. 111, the fixed end 22 is exposed outside the conductive soft layer 12, and then the template 30 is removed, leaving the aligned abrasive particles 20 in the conductive soft layer 12, as shown in FIG. 1C . Step 3: As shown in FIG. 1D, a metal layer 40 is formed on the conductive soft layer 12, and the metal layer 40 covers the abrasive particles 20, and combined with the abrasive particles 20, the abrasive particles 20 are fixed to the metal. The layer 40 has a bonding surface 41 away from the temporary substrate 10. In this embodiment, the metal layer 40 is formed on the conductive soft layer 12 by electroplating, but is not limited thereto, and the metal layer 40 is connected to the conductive surface 121 to be combined with the abrasive particles 20 . The material used for the metal layer 40 may be palladium, nickel, chromium, titanium, gold, platinum, stainless steel or a combination thereof. Step 4: As shown in FIG. 1E and FIG. 1F, the rigid layer 11 and the conductive soft layer 12 are removed, so that the abrasive particles 20 inserted into the conductive soft layer 12 are exposed to the polishing end 21, because The large abrasive particles 23 or the small abrasive particles 24, the end point 211 of the polishing end 21 is in the conductive soft layer 12 on the plane 111 opposite to the rigid layer 11, the end points 211 After exposure, an exposed height H having a high uniformity is formed with respect to the metal layer 40, and a polishing plane 70 is formed. Next, the bonding surface 41 is combined with a polishing base 50 to obtain the finishing tool. In this embodiment, the bonding surface 41 is bonded to the polishing base 50 by means of cementing, and epoxy resin, acrylic glue or thermosetting glue is used, and the bonding surface 41 and the grinding base 50 are used. An adhesive layer 60 is formed between the two, but this is merely an example, and the present invention is not limited by the combination. In summary, the dressing tool obtained by the manufacturing method of the present invention can shorten the difference in the exposed height of each of the abrasive particles by first abutting the grinding end against the plane of the rigid layer, so that the exposed height The high consistency can be obtained. When the polishing pad is subjected to the trimming operation, the end point is formed by the grinding plane, so that each of the grinding ends can effectively contact the polishing pad and uniformly grind. The efficiency of the dressing tool is improved. Therefore, the present invention is highly progressive and conforms to the requirements of the invention patent application, and the application is filed according to law, and the praying office grants the patent as soon as possible. The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made by the scope of the present application should remain within the scope of the patent of the present invention.

10‧‧‧ Temporary base
11‧‧‧Rigid layer
111‧‧‧ plane
12‧‧‧ Conductive soft layer
121‧‧‧ conductive surface
122‧‧‧Soft substrate
20‧‧‧Abrasive particles
21‧‧‧ grinding end
211‧‧‧Endpoint
22‧‧‧ fixed end
23‧‧‧ Large abrasive particles
24‧‧‧Small abrasive particles
30‧‧‧ Template
31‧‧‧ Positioning holes
40‧‧‧metal layer
41‧‧‧ joint surface
50‧‧‧ Grinding base
60‧‧‧Adhesive layer
70‧‧‧ grinding plane
H‧‧‧Exposed height

1A to 1F are schematic views showing a manufacturing process according to an embodiment of the present invention.

20‧‧‧Abrasive particles

21‧‧‧ grinding end

211‧‧‧Endpoint

22‧‧‧ fixed end

23‧‧‧ Large abrasive particles

24‧‧‧Small abrasive particles

40‧‧‧metal layer

41‧‧‧ joint surface

50‧‧‧ Grinding base

60‧‧‧Adhesive layer

70‧‧‧ grinding plane

H‧‧‧Exposed height

Claims (13)

A method of manufacturing a chemical mechanical polishing dresser comprising the steps of: providing a temporary substrate comprising a rigid layer having a flat surface and a conductive soft layer disposed on the plane; implanting the plurality of abrasive particles in the The conductive soft layer is such that a polished end of the abrasive particle is inserted into the conductive soft layer to interfere with the plane; a metal layer covering and fixing the abrasive particle is formed on the conductive soft layer, the metal layer having a distance away from the temporary substrate a bonding surface; and removing the rigid layer and the conductive soft layer, and combining the bonding surface with a polishing base to obtain a finishing tool, wherein the polishing end of the abrasive particle has a high uniformity exposed height . The method of manufacturing a chemical mechanical polishing conditioner according to claim 1, wherein the abrasive particles are implanted through a template having a plurality of positioning holes, the abrasive particles passing through the positioning holes and oriented at the grinding end. The conductive soft layer is inserted. The method of manufacturing a chemical mechanical polishing conditioner according to claim 1, wherein the abrasive particles have a particle diameter of 100 um to 500 um and comprise at least one large abrasive particle and at least one particle diameter smaller than the large abrasive particle. Small abrasive particles. The method for manufacturing a chemical mechanical polishing conditioner according to claim 1, wherein the abrasive particles are selected from the group consisting of synthetic diamonds, natural diamonds, polycrystalline diamonds, cubic boron nitride, polycrystalline cubic boron nitride, and combinations thereof. The group formed. The method of manufacturing a chemical mechanical polishing conditioner according to claim 1, wherein the polishing end of the abrasive particle is inserted into the conductive soft layer to oppose the plane, and the abrasive particle is exposed to a fixed end of the polishing end. Conductive soft layer. The method of manufacturing a chemical mechanical polishing conditioner according to claim 5, wherein the metal layer covers the conductive layer on the conductive soft layer and connects the fixed end of the abrasive particles to fix the abrasive particles. The method of manufacturing a chemical mechanical polishing conditioner according to claim 1, wherein the metal layer is formed on the conductive soft layer by electroplating. The method of manufacturing a chemical mechanical polishing conditioner according to claim 1, wherein the bonding surface is bonded to the polishing base in a cemented manner. The method of manufacturing a chemical mechanical polishing conditioner according to claim 1, wherein the metal layer is made of a group selected from the group consisting of palladium, nickel, chromium, titanium, gold, platinum, stainless steel, and combinations thereof. The method of manufacturing a chemical mechanical polishing conditioner according to claim 1, wherein the conductive soft layer comprises a flexible substrate and a conductive surface coated on the flexible substrate. The method for manufacturing a chemical mechanical polishing conditioner according to claim 10, wherein the material of the flexible substrate is selected from the group consisting of ethylene/vinyl acetate copolymer (EVA) and polyethylene terephthalate (PET). , a group of polyethylene (PE) and wax. The method for manufacturing a chemical mechanical polishing conditioner according to claim 10, wherein the conductive surface is made of a material selected from the group consisting of palladium, nickel, chromium, titanium, gold, platinum, copper, aluminum, carbon, stainless steel, and combinations thereof. The group formed. The method for manufacturing a chemical mechanical polishing conditioner according to claim 1, wherein the rigid layer is made of steel, nickel, chromium, titanium, copper, aluminum, granite, glass, and acrylic. The group consisting of.