TW201527455A - Composition for forming conductive film, conductive film, organic thin film transistor, electronic paper, display device, wiring board - Google Patents

Abstract

The invention provides a composition for forming conductive film, a conductive film using the same, an organic thin film transistor, an electronic paper, a display device, and a wiring board. The composition for forming conductive film can be used to obtain the organic thin film transistor exhibiting excellent insulation reliability and high mobility. The composition for forming conductive film of the invention includes a conductive particle (A) and an additive (B). The additive (B) is at least one compound selected from a group consisting of a compound represented by General Formula (I), a compound represented by General Formula (II), and a compound represented by General Formula (III):. General Formula (I) C<SP>+</SP>-L-SO3<SP>-</SP> General Formula (III) X-L-Y.

Description

Conductive film forming composition, conductive film, organic thin film transistor, Electronic paper, display element, wiring board

The present invention relates to a conductive film-forming composition and a conductive film, an organic thin film transistor, an electronic paper, a display element, and a wiring board formed using the conductive film.

Field effect transistor (FET), radio frequency identification (Radio-frequency identification) used in liquid crystal displays or organic electroluminescence (EL) displays due to weight reduction, cost reduction, and softening In an apparatus using a logic circuit such as an RFID (RF tag) or a memory, an organic thin film transistor (organic TFT (Thin Film Transistor)) is used.

Generally, the organic thin film transistor includes a substrate, a gate insulating film, an organic semiconductor layer, and three electrodes (a gate electrode, a source electrode, and a drain electrode).

Here, as a method of forming a conductive film such as an electrode or a wiring on a substrate or an insulating film or the like, a method of forming a conductive film by applying a dispersion of conductive particles (for example, silver particles) and sintering is known. The method is simple, energy-saving and resource-saving compared to previous formation methods by high heat, vacuum process (sputtering) or plating treatment. Therefore, it is expected to be in the development of next-generation electronic devices.

For example, Patent Document 1 discloses a conductive paste containing a conductive powder and an additive, and describes a use that can be used for wiring formation of a circuit board or the like. In particular, as an additive, a sulfonic acid such as a dodecylsulfonic acid triethanolamine salt or a derivative thereof or the like is used in the examples.

Further, Patent Document 2 describes a conductive paste containing an additive such as a copper powder, a thermosetting resin, and a dimethylalkyl lauryl betaine.

[Prior Art Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. Hei 5-230400

[Patent Document 2] Japanese Patent Laid-Open No. Hei 4-36903

Recently, in the progress of miniaturization or high performance of organic thin film transistors, excellent mobility (especially field-effect mobility) and stability (especially insulation reliability) are required for organic thin film transistors.

In the above, the inventors of the present invention have made an organic thin film transistor by using the composition forming electrode described in the above-mentioned documents, and have evaluated the mobility and the insulation reliability between the electrodes. It was found that the obtained organic thin film transistor did not satisfy the level of the recently required characteristics (mobility and insulation reliability), and further improvement was required.

Therefore, in view of the actual situation, the present invention aims to provide an available A composition for forming a conductive film of an organic thin film transistor which exhibits excellent insulation reliability and high mobility, a conductive film formed using the same, an organic thin film transistor, an electronic paper, a display element, and a wiring board.

As a result of intensive studies on the above-mentioned problems, the present inventors have found that by forming an electrode using a composition for forming a conductive film containing conductive particles and a specific compound, excellent insulation reliability and high migration can be obtained. The rate of the organic thin film transistor has thus completed the present invention. That is, the inventors of the present invention have found that the above problems can be solved by the following configuration.

(1) A conductive film-forming composition comprising: conductive particles (A) and an additive (B) selected from a compound represented by the following formula (I) and a later formula At least one of the group consisting of the compound represented by (II) and the compound represented by the following formula (III).

(2) The composition for forming a conductive film according to (1), wherein the additive (B) is a compound represented by the following formula (III), and Y is -SO ₃ H.

(3) The composition for forming a conductive film according to (1), wherein the additive (B) is a compound represented by the following formula (I), and C ⁺ is selected from the group consisting of the following formula (A) to formula (B) The cations of the group formed.

(4) The composition for forming a conductive film according to (1), wherein the additive (B) is a compound represented by the following formula (II).

(5) The composition for forming a conductive film according to any one of (1) to (4), The conductive particles (A) are particles of a metal selected from the group consisting of Ag, Cu, Al, Ni, and Ta.

(6) The composition for forming a conductive film according to any one of (1) to (5), wherein the content of the additive (B) is 1.5% by mass to 7.0% by mass based on the total mass of the composition for forming a conductive film. %.

(7) A conductive film formed using the composition for forming a conductive film according to any one of (1) to (6).

(8) An organic thin film transistor comprising an electrode formed using the composition for forming a conductive film according to any one of (1) to (6).

(9) An electronic paper using the organic thin film transistor according to (8).

(10) A display element using the organic thin film transistor according to (8).

(11) A wiring board formed by using the conductive film forming composition according to any one of (1) to (6).

As described below, according to the present invention, it is possible to provide a conductive film-forming composition for an organic thin film transistor which exhibits excellent insulation reliability and high mobility, and a conductive film formed using the same, and an organic film. Thin film transistors, electronic paper, display elements and wiring boards.

10‧‧‧Substrate

20‧‧‧gate electrode

30‧‧‧gate insulating film

40‧‧‧Source electrode

42‧‧‧汲electrode

50‧‧‧Organic semiconductor layer

60‧‧‧ Sealing layer

100,200‧‧‧Organic film transistor

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing one embodiment of an organic thin film transistor of the present invention.

Fig. 2 is a schematic cross-sectional view showing another embodiment of the organic thin film transistor of the present invention.

Hereinafter, the composition for forming a conductive film of the present invention, an organic thin film transistor using the same, and the like will be described.

In addition, in this specification, the numerical range represented by "~" means the range which contains the numerical value of the before and after the [~.

[Conductive film forming composition]

The conductive film-forming composition of the present invention (hereinafter also referred to as a composition of the present invention) contains conductive particles (A) and an additive (B).

Since the composition of the present invention adopts such a configuration, it is considered that a desired effect can be obtained.

The reason for this is not clear, but it is presumed to be as follows.

When a voltage is applied to the electrode of the organic thin film transistor, the conductive material such as a metal in the electrode is ionized by the action of the electric field, and ion migration occurs in the organic semiconductor layer. If such migration occurs, the insulation between the source/drain electrodes is lowered. That is, the insulation reliability is lowered.

When an electrode (conductive film) is formed using the composition of the present invention, the electrode contains a conductive substance such as a metal and an additive (B) containing a specific cation and an anion (in addition, a compound represented by the formula (III) is used. Cationic and anionic) are produced by proton transfer. Therefore, as described above, even if a conductive substance such as a metal in the electrode is ionized, the additive (B) in the electrode captures the generated ion, and the prevention Stop ion migration. That is, the additive (B) functions as an excellent migration inhibitor (anti-migration agent). As a result, it is considered that the organic thin film transistor having the electrode formed using the composition of the present invention exhibits excellent insulation reliability. Further, it is considered that the reason for the action is that, in particular, the specific anion and cation of the additive (B) have an extremely high affinity with ions of a conductive substance such as a metal.

Further, since the additive (B) has high stability in the electrode, it is difficult to dissociate in an adjacent organic semiconductor layer or the like. As a result, it is considered that there is almost no adverse effect on the mobility of the organic thin film transistor, and high mobility is exhibited. Further, it is considered that the reason for the action is that, particularly in the state in which the additive (B) captures ions, the specific cation or anion which the additive (B) has is difficult to be free.

Further, the additive (B) is excellent in thermal stability and also has resistance to high-temperature processes such as production of an organic thin film transistor.

Hereinafter, each component contained in the composition of the present invention will be described in detail.

<Electrically conductive particles (A)>

The conductive particles (A) contained in the composition of the present invention are not particularly limited as long as they are particulate conductive materials, and for example, metal particles are preferred.

The particulate form refers to a small granular shape, and specific examples thereof include a spherical shape and an ellipsoidal shape. It does not need to be a complete ball or ellipsoid, or it can be partially deformed.

The conductive particles (A) are preferably particles of a metal selected from the group consisting of Ag (silver), Cu (copper), Al (aluminum), Ni (nickel), and Ta (ruthenium), more preferably Silver particles or copper particles, particularly preferably silver particles.

The conductive particles (A) are preferably conductive nanoparticles.

When the conductive particles (A) are silver nanoparticles, the preparation method thereof is not particularly limited, and for example, it can be prepared by adding N in the presence of a dispersing agent in an aqueous solution of a silver salt such as silver nitrate. An aqueous solution of a reducing agent such as N-diethylhydroxylamine, and reducing the silver salt by a reducing agent.

The average particle diameter of the conductive particles (A) is not particularly limited, but is preferably 200 nm or less, and more preferably 100 nm or less. The lower limit is also not particularly limited, and is preferably 5 nm or more.

Further, the average particle diameter in the present invention means an average primary particle diameter. The average particle diameter is measured by a transmission electron microscope (TEM), and the particle diameter (diameter) of at least 50 or more conductive particles is measured, and the particle diameter is arithmetically averaged. Further, in the observation chart, when the shape of the conductive particles is not a perfect circular shape, the long diameter is measured as a diameter.

In the composition of the present invention, the content of the conductive particles (A) is not particularly limited, and is preferably 5.0% by mass to 80.0% by mass, and more preferably 10.0% by mass to 60.0% by mass based on the total mass of the composition.

<Additive (B)>

The composition of the present invention contains at least 1 selected from the group consisting of a compound represented by the following formula (I), a compound represented by the following formula (II), and a compound represented by the following formula (III). Kind of additive (B). As described above, the additive (B) inhibits ion migration of the metal.

Hereinafter, each compound will be described in detail.

(Compound represented by the general formula (I) (sulfobetaine type zwitterionicization Compound))

Formula (I) C ⁺ -L-SO ₃ ^-

In the above formula (I), C ⁺ represents a cation selected from the group consisting of the following general formulae (A) to (D). In particular, in terms of the effect of the present invention being more excellent, a cation selected from the group consisting of the general formula (A) to the general formula (C) is preferred, and the obtained organic thin film transistor exhibits superiority. The reason of the insulation reliability is more preferably a cation represented by the formula (A) or the formula (B).

In the general formula (A), R ₁ to R ₃ each independently represent an aliphatic hydrocarbon group having 1 to 5 carbon atoms or an aromatic hydrocarbon group. In particular, in the case where the insulating reliability of the organic thin film transistor is more excellent and/or the mobility is more excellent (hereinafter, also referred to as "the aspect in which the effect of the present invention is more excellent"), R ₁ to R _{3 are} preferable. All of them are aliphatic hydrocarbon groups having a carbon number of 1 to 5.

The aliphatic hydrocarbon group may be any of a linear chain, a branched chain, and a cyclic chain. The aliphatic hydrocarbon group has a carbon number of 1 to 5, and in terms of the effect of the present invention being more excellent, More preferably 1~3. Specific examples of the aliphatic hydrocarbon group include an alkyl group, an alkenyl group, and an alkynyl group. The aliphatic hydrocarbon group may have a substituent in the range which does not impair the effect of the present invention, and examples of the substituent include a substituent Q (excluding an aliphatic hydrocarbon group) which will be described later.

The carbon number of the aromatic hydrocarbon group is not particularly limited, but is preferably 6 to 18. Specific examples of the aromatic hydrocarbon group include an aryl group (such as a phenyl group, a tolyl group, and a xylyl group), a naphthyl group, and the like. The aromatic hydrocarbon group may have a substituent in the range which does not impair the effect of the present invention, and examples of the substituent include a substituent Q which will be described later.

* indicates the bonding position with L described later.

In the general formula (A), R ₁ to R ₃ may be bonded to each other to form a ring structure. That is, two or more groups selected from the group consisting of R ₁ to R ₃ may be bonded to each other to form a ring structure. Further, in the present specification, the ring structure is bonded to each other to form a ring structure, and two or more groups are bonded at an arbitrary position via a single bond, a double bond, a triple bond or a divalent linking group to form a ring structure.

The divalent linking group is not particularly limited, and examples thereof include -CO-, -NH-, and -NR- (R: a substituent (for example, a substituent Q described later)), -O-, -S-, or A group obtained by combining the divalent linking groups.

In the formula (B), R ₄ represents an aliphatic hydrocarbon group having 1 to 5 carbon atoms, -NR ₁₉ R ₂₀ , -N=CR ₂₁ R ₂₂ , -CR ₂₃ =NR ₂₄ , or -CR _B1 R _B2 -NR _B3 R _B4 .

Specific examples and preferred embodiments of the aliphatic hydrocarbon group having 1 to 5 carbon atoms are the same as those of the aliphatic hydrocarbon group having 1 to 5 carbon atoms represented by the above R ₁ to R ₃ .

The R ₁₉ to R ₂₄ and R _B1 to R _B4 each independently represent a hydrogen atom or a hydrocarbon group.

The type of the hydrocarbon group is not particularly limited, and examples thereof include an aliphatic hydrocarbon group, an aromatic hydrocarbon group, and a group obtained by combining the hydrocarbon groups.

The aliphatic hydrocarbon group may be any of a linear chain, a branched chain, and a cyclic chain. The carbon number of the aliphatic hydrocarbon group is not particularly limited, but is preferably 1 to 12. Specific examples of the aliphatic hydrocarbon group include an alkyl group, an alkenyl group, and an alkynyl group.

The carbon number of the aromatic hydrocarbon group is not particularly limited, but is preferably 6 to 18. Specific examples of the aromatic hydrocarbon group include an aryl group (such as a phenyl group, a tolyl group, and a xylyl group), a naphthyl group, and the like.

R ₁₉ and R ₂₀ may be bonded to each other to form a ring structure.

Further, R ₄ is represented by aliphatic hydrocarbon group having a carbon number of 1 to 5, and R ₁₉ ~ R ₂₄ and R _B1 hydrocarbon group represented by R _B4 ~, may have a substituent, as the substituent group include: Substituent Q described later.

In the formula (B), R ₅ represents a hydrogen atom, an aliphatic hydrocarbon group having 1 to 5 carbon atoms, an alkoxy group, an alkylthio group, a hydroxyl group, a decyl group, or -NR ₂₅ R ₂₆ . Specific examples and preferred embodiments of the aliphatic hydrocarbon group having 1 to 5 carbon atoms are the same as those of the aliphatic hydrocarbon group having 1 to 5 carbon atoms represented by the above R ₁ to R ₃ .

The R ₂₅ and R ₂₆ each independently represent a hydrogen atom or a hydrocarbon group, and may be bonded to each other to form a ring structure. Specific examples and preferred embodiments of the hydrocarbon group are the same as those of the hydrocarbon groups represented by R ₁₉ to R ₂₄ and R _B1 to R _B4 .

Further, the number of carbon atoms represented by ₅ R is an aliphatic hydrocarbon group of 1 to 5, and the hydrocarbon group represented by R ₂₅ and R _26, may have a substituent, as the substituent, for example, include: substituent groups described later Q, .

In the formula (B), R ₆ represents an aliphatic hydrocarbon group having 1 to 5 carbon atoms, an alkoxy group, an alkylthio group, a hydroxyl group, a decyl group, -NR ₂₇ R ₂₈ , -N=CR ₂₉ R ₃₀ , or -CR ₃₁ = NR ₃₂ . Specific examples and preferred embodiments of the aliphatic hydrocarbon group having 1 to 5 carbon atoms are the same as those of the aliphatic hydrocarbon group having 1 to 5 carbon atoms represented by the above R ₁ to R ₃ .

The R ₂₇ to R ₃₂ each independently represent a hydrogen atom or a hydrocarbon group. Specific examples and preferred embodiments of the hydrocarbon group are the same as those of the hydrocarbon groups represented by R ₁₉ to R ₂₄ and R _B1 to R _B4 . R ₂₇ and R ₂₈ may be bonded to each other to form a ring structure.

Further, the number of carbon atoms represented by R ₆ is an aliphatic hydrocarbon group of 1 to 5, and the hydrocarbon group represented by R ₂₇ ~ R _32, may have a substituent, as the substituent, for example, include: substituent groups described later Q, .

Here, both of R ₅ and R ₆ in the formula (B) are not alkoxy groups, hydroxyl groups, alkylthio groups or mercapto groups.

Further, all of R ₄ , R ₅ and R ₆ in the formula (B) are not the same as the -NR ₁₉ R ₂₀ , the -NR ₂₅ R ₂₆ or the -NR ₂₇ R ₂₈ . That is, for example, R ₄ is the -NR ₁₉ R ₂₀ , and R ₅ is the -NR ₂₅ R ₂₆ , and R _{6 is} not the -NR ₂₇ R ₂₈ .

In the formula (B), R ₄ to R ₆ may be bonded to each other to form a ring structure. That is, two or more groups selected from the group consisting of R ₄ to R ₆ may be bonded to each other to form a ring structure.

* indicates the bonding position with L.

When R ₄ form a ring structure, a group derived from a ring structure group of R 2 is preferably a divalent group selected from the group consisting of _4, the following formula (a) ~ formula (f) thereof.

When R ₅ form a ring structure, the ring structure derived from a divalent group R 2 is preferably selected from the group consisting of ₅ the following general formula (a) ~ formula (E), Formula (g) and formula (h a divalent group of the group consisting of.

When R ₆ form a ring structure, the divalent group derived from a ring structure group R 2 in ₆ is preferably a divalent group selected from the group consisting of the following general formula (a) ~ formula (h) thereof.

Here, the "two-valent group derived from R ₅ in the ring structure" and the "divalent group derived from R ₆ in the ring structure" are not the following general formula (g) or formula ( h) the group shown. Further, "a divalent group derived from R ₄ in the ring structure", "a divalent group derived from R ₅ in the ring structure", and "a divalent group derived from R ₆ in the ring structure" All are not the groups represented by the following formula (e).

In the general formulae (a) to (f), R ₃₅ to R ₄₈ each independently represent a hydrogen atom or a substituent. As a substituent, the substituent Q mentioned later is mentioned, for example.

In the general formulae (a) to (h), the asterisk indicates the bonding position, and one of the two asterisks indicates the bonding position of each group in the general formula (B), and the other asterisk indicates that The bonding position when the ring structure is formed and bonded to each other. For example, R ₄ and R ₆ in the formula (B) are bonded to each other to form a ring structure, and a divalent group derived from R ₄ in the ring structure is a group represented by the formula (a), derived from When the divalent group of R ₆ in the ring structure is a group represented by the formula (b), an asterisk in the formula (a) represents a bonding position with N ⁺ in the formula (B), An asterisk in the formula (b) represents a bonding position of a carbon atom (a carbon atom to which R ₅ and R _{6 are} bonded) in the general formula (B), and another asterisk and a general formula in the general formula (a) ( Another asterisk in b).

Preferred embodiments of the cation represented by the formula (B) are shown below. Here, R _s represents a group represented by the above R ₅ or R ₆ (for example, a hydrogen atom, an aliphatic hydrocarbon group having 1 to 5 carbon atoms, an alkoxy group, an alkylthio group, a hydroxyl group, a decyl group, and -NR ₂₇ R ₂₈ , -N=CR ₂₉ R ₃₀ or -CR ₃₁ =NR ₃₂ ), and R independently represents a hydrogen atom or a substituent (for example, a substituent Q to be described later).

In the general formula (C), R ₇ to R ₉ each independently represent an aliphatic hydrocarbon group having 1 to 5 carbon atoms or an aromatic hydrocarbon group. Specific examples and preferred embodiments of the aliphatic hydrocarbon group or the aromatic hydrocarbon group are the same as those described for the above R ₁ to R ₃ .

R ₇ to R ₉ may be bonded to each other to form a ring structure. That is, two or more groups selected from the group consisting of R ₇ to R ₉ may be bonded to each other to form a ring structure.

* indicates the bonding position with L.

In the formula (D), R ₁₀ and R ₁₁ each independently represent an aliphatic hydrocarbon group having 1 to 5 carbon atoms or an aromatic hydrocarbon group. Specific examples and preferred embodiments of the aliphatic hydrocarbon group or the aromatic hydrocarbon group are the same as those described for the above R ₁ to R ₃ .

R ₁₀ and R ₁₁ may be bonded to each other to form a ring structure, respectively.

* indicates the bonding position with L.

In the formula (I), L represents a divalent linking group. Examples of the divalent linking group include -COO-, -OCO-, -CONH-, -NHCO-, -CO-, -O-, -S-, -SO-, -SO ₂ -, and divalent fat. a hydrocarbon group (e.g., an alkylene group (preferably having a carbon number of 1 to 6), a cycloalkyl group (preferably having a carbon number of 3 to 10), and an alkenyl group (preferably having a carbon number of 2 to 6). A divalent aromatic hydrocarbon group (for example, a phenylene group) or a divalent linking group obtained by combining the plurality of groups.

(Compound represented by the formula (II): phosphonate betaine type zwitterionic compound)

In the formula (II), R ₅₁ to R ₅₃ each independently represent a linear or branched alkyl group or alkenyl group having 1 to 5 carbon atoms.

The alkyl group may be linear or branched. The number of carbon atoms contained in the alkyl group is from 1 to 5, but from the viewpoint of more excellent effects of the present invention, it is preferably from 1 to 3.

The alkenyl group may be linear or branched. The number of carbon atoms contained in the alkenyl group is from 1 to 5, but from the viewpoint of more excellent effects of the present invention, it is preferably from 1 to 3.

R ₅₄ represents a hydrogen atom or an alkyl group.

The carbon number of the alkyl group is not particularly limited, but is preferably from 1 to 5, more preferably from 1 to 3, in terms of the effect of the present invention being more excellent.

A ₁ represents an alkylene group or a hydroxyalkyl group having a carbon number of 1 to 3. The hydroxyalkylene group means an alkylene group having a hydroxyl group (-OH group).

The alkyl group and the hydroxyalkylene group have a carbon number of 1 to 3, preferably 1 to 2. Examples of A ₁ include a methylene group, an ethyl group, a propyl group, an isopropyl group, a hydroxyethyl group, and a 2-hydroxyl propyl group.

(compound represented by the formula (III))

General formula (III) X-L-Y

In the formula (III), X represents a basic group. The kind of the basic group is not particularly limited, and examples thereof include (a) an amine group (-NH ₂ ), (b) a substituted amino group, (c) a thiol group which may have a substituent, and (d) A mercapto group having a substituent, (e) a mercapto group which may have a substituent, (f) a nitrogen-containing heterocyclic group which may have a substituent, and the like.

As the substituted amino group (mono- or di-substituted amino group), there are mentioned: Methylamino, ethylamino, propylamino, isopropylamino, butylamino, isobutylamino, tert-butylamino, pentylamino, hexylamino, heptyl Amino, octylamino, dimethylamino, diethylamino, dipropylamino, dibutylamino, dipentylamino, dihexylamino, diheptylamino, di Octylamino, N-methyl-N-ethylamino, cyclopropylamino, cyclopentylamino, cyclohexylamino, phenylamino, diphenylamino, dibenzylamino , N-phenyl-N-methylamino, N-phenyl-N-ethylamino, N-benzyl-N-methylamino, N-benzyl-N-ethylamine, N -benzyl-N-cyclohexylamino, N-cyclohexyl-N-propylamino, N-cyclohexyl-N-(3-hydroxypropyl)amino, N-(4-hydroxycyclohexyl)- N-propylamino, N-(4-hydroxycyclohexyl)-N-(3-hydroxypropyl)amino, N-(4-hydroxycyclohexyl)methyl-N-propylamino, N- Cyclohexyl-N-acetylindenyl (acetyl)amino group, N-(3-methoxypropyl)-N-propylamino group, N-(2-carboxyethyl)-N-propylamino group, N-(2-ethylpropyl)-N-propylamino, N-cyclohexyl-N-(methylsulfonyl)amino, N-(tetrahydropyran-4-yl)- N-propylamino group, N-(indan-2-yl)-N-propylamino group and the like.

The substituted amine group is preferably a group represented by the following formula (X).

In the formula (X), Rx ₁ and Rx ₂ each independently represent an aliphatic hydrocarbon group which may have a hetero atom.

The number of carbon atoms in the aliphatic hydrocarbon group is not particularly limited, and is preferably from 1 to 5, more preferably from 1 to 3, in terms of the effect of the present invention being more excellent. A hetero atom (for example, an oxygen atom, a sulfur atom, a nitrogen atom, or the like) may be contained in the aliphatic hydrocarbon.

Rx ₁ and Rx ₂ may be bonded to each other to form a ring. For example, Rx ₁ and Rx ₂ may be bonded to form an alkenyl group which may have an oxygen atom.

Examples of the fluorenyl group which may have a substituent include a methyl fluorenyl group, an ethyl fluorenyl group, a propyl fluorenyl group, an isopropyl fluorenyl group, a butyl fluorenyl group, an isobutyl fluorenyl group, and a tert-butyl fluorene group. Base, pentyl fluorenyl, hexyl decyl, heptyl fluorenyl, octyl decyl, N,N-dimethylindenyl, N,N'-dimethylindenyl, N,N,N'-three Methyl fluorenyl, N, N, N', N"-tetramethyl fluorenyl, N, N-diethyl fluorenyl, N, N'-diethyl fluorenyl, N, N, N' - three Ethyl decyl, N, N, N', N"-tetraethyl decyl, N, N-dipropyl fluorenyl, N, N'-dipropyl fluorenyl, N, N, N'- Propyl fluorenyl, N, N, N', N"-tetrapropyl fluorenyl, N, N-dibutyl fluorenyl, N, N'-dibutyl fluorenyl, N, N, N'- Butyl fluorenyl, N,N,N',N"-tetrabutyl fluorenyl, N,N-dipentyl fluorenyl, N,N'-dipentyl fluorenyl, N,N,N'-three Pentyl, N,N,N',N"-tetrapentylcarbonyl, N,N-dihexyldecyl, N,N'-dihexyldecyl, N,N,N'-trihexylfluorene Base, N, N, N', N"-tetrahexyl fluorenyl, N,N-diheptyl fluorenyl, N,N'-diheptyl fluorenyl, N,N,N'-triheptyl fluorenyl , N,N,N',N"-tetraheptyl fluorenyl, N,N-dioctyl fluorenyl, N,N'-dioctyl fluorenyl, N,N,N'-trioctyl fluorenyl , N, N, N', N" - four Octyl fluorenyl, N-methyl-N-ethyl fluorenyl, N-methyl-N'-ethyl fluorenyl, cyclopropyl fluorenyl, cyclopentyl fluorenyl, cyclohexyl fluorenyl, phenyl hydrazine N,N-diphenylfluorenyl, N,N'-diphenylfluorenyl, N,N,N'-triphenylindenyl, N,N,N',N"-tetraphenylanthracene N,N-dibenzylindenyl, N,N'-dibenzylindenyl, N,N,N'-tribenzylhydrazine , N,N,N',N"-tetrabenzylindenyl, N-phenyl-N'-methylindenyl, N-phenyl-N'-ethylindenyl, N-benzyl-N -methylmercapto, N-benzyl-N-ethylindenyl, and the like.

Further, examples of the substituent include a substituent Q which will be described later. Further, the arbitrary substituent may be substituted by one to three at any position which can be substituted. When the number of the substituents is two or more, each substituent may be the same or different.

Examples of the fluorenyl group which may have a substituent include a methyl fluorenyl group, an ethyl fluorenyl group, a propyl fluorenyl group, an isopropyl fluorenyl group, a butyl fluorenyl group, an isobutyl fluorenyl group, and a tert-butyl fluorene group. Base, pentyl fluorenyl, hexyl decyl, heptyl fluorenyl, octyl decyl, N,N-dimethylindenyl, N,N'-dimethylindenyl, N,N,N'-three Methyl fluorenyl, N,N-diethyl fluorenyl, N,N'-diethyl fluorenyl, N,N,N'-triethyl fluorenyl, N,N-dipropyl fluorenyl, N , N'-dipropyldecyl, N,N,N'-tripropyldecyl, N,N-dibutyldecyl, N,N'-dibutyldecyl, N,N,N' -tributyl fluorenyl, N,N-dipentyl fluorenyl, N,N'-dipentyl fluorenyl, N,N,N'-triamyl fluorenyl, N,N-dihexyl fluorenyl, N,N'-dihexyl fluorenyl, N,N,N'-trihexyl fluorenyl, N,N-diheptyl fluorenyl, N,N'-diheptyl fluorenyl, N,N,N'- Triheptyl fluorenyl, N,N-dioctylfluorenyl, N,N'-dioctylfluorenyl, N,N,N'-trioctyldecyl, N-methyl-N-ethylhydrazine , N-methyl-N'-ethyl fluorenyl, cyclopropyl fluorenyl, cyclopentyl fluorenyl, cyclohexyl fluorenyl, phenyl fluorenyl, N, N-diphenyl fluorenyl, N, N '-Diphenylfluorenyl, N,N,N'-triphenylindenyl, N,N-dibenzylhydrazine , N,N'-dibenzylindenyl, N,N,N'-tribenzylindenyl, N-phenyl-N'-methylindenyl, N-phenyl-N'-ethylindenyl And N-benzyl-N-methylindenyl, N-benzyl-N-ethylindenyl and the like.

Further, examples of the substituent include a substituent Q which will be described later. Further, the arbitrary substituent may be substituted by one to three at any position which can be substituted. Substituent When the number is two or more, each substituent may be the same or different.

The nitrogen-containing heterocyclic ring in the nitrogen-containing heterocyclic group which may have a substituent may include a 3 to 15 membered monocyclic or condensed heterocyclic ring having at least one nitrogen atom, a crosslinked heterocyclic ring, Examples of the heterocyclic ring having a spiro bond include pyrrole, imidazole, triazole, pyrazole, pyridine, pyrazine, pyrimidine, pyridazine, hydrazine, diazonium, oxazole, thiazole, isoxazole, isothiazole,吲哚, isoindole, quinoline, isoquinoline, benzoxazole, benzothiazole, benzimidazole, aziridine, azetidine, pyrrolidine, piperidine, piperazine, morpholine, thio Porphyrin, perhydrozine, perhydrodiazepine, porphyrin, isoporphyrin, quinazoline, tetrahydroquinoline, perhydroquinoline, tetrahydroisoquinoline, perhydroisoquinoline, tetrahydrogen Naphthyridine, quinoxaline, tetrahydroquinoxaline, dihydrobenzimidazole, perhydrobenzimidazole, oxazole, tetrahydrocarbazole, azabicyclo[3.2.1]octane, quinuclidine ring, 2, 8-diazaspiro[4.5]decane, 1,4,9-triazaspiro[5.5]undecane, 3,9-diazaspiro[5.5]undecane, 2,9-diaza Heterospiro[5.5]undecane, 1,6-diazaspiro[3.4]octane, 1,5-diazaspiro[3.4]octane, 1,7-diaza Spiro[3.5]decane, 1,6-diazaspiro[3.5]decane, 1,5-diazaspiro[3.5]decane, 1,7-diazaspiro[4.4]decane, 1 ,6-diazaspiro[4.4]decane, 1,8-diazaspiro[4.5]decane, 1,7-diazaspiro[4.5]decane, 2,6-diazaspiro[ 3.4] Octane, 1,6-diazaspiro[4.5]decane, 2,6-diazaspiro[3.5]decane, 1,9-diazaspiro[5.5]undecane, 1, 8-diazaspiro[5.5]undecane, 6-azaspiro[3.5]decane, 6-azaspiro[3.4]octane, 2-azaspiro[3.4]octane, 1,7- Diazaspiro[5.5]undecane, 1,4,9-triazaspiro[5.5]undecane, 1,3,8-triazaspiro[4.5]decane, 1-sulfur-4, 9-diazaspiro[5.5]undecane, 1-sulfo-4,8-diazaspiro[5.5]undecane ring, and the like.

The nitrogen-containing heterocycle may contain other heteroatoms other than a nitrogen atom (eg, an oxygenogen) Sub, sulfur atom).

Further, examples of the substituent include a substituent Q which will be described later. Further, the arbitrary substituent may be substituted by one to three at any position which can be substituted. When the number of the substituents is two or more, each substituent may be the same or different.

Further, the bonding position of the nitrogen-containing heterocyclic group and L to be described later is not particularly limited, and in many cases, a portion in which a hydrogen atom is removed from the nitrogen-containing hetero ring is bonded.

L represents a single bond or a divalent linking group. The definition of the divalent linking group is as described above.

Y represents -SO ₃ H or -P=O(OH)OR group, and in terms of the effect of the present invention being more excellent, -SO ₃ H is preferred. R represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

(Substituent Q)

The substituent Q in the present specification includes a halogen atom, an aliphatic hydrocarbon group (alkyl group (including a cycloalkyl group), an alkenyl group (including a cycloalkenyl group, a bicycloalkenyl group), an alkynyl group, an aryl group, and a heterocyclic ring. Base, cyano, hydroxy, nitro, carboxy, alkoxy, aryloxy, nonyloxy, heterocyclic oxy, decyloxy, amine methoxycarbonyl, alkoxycarbonyloxy, aryloxycarbonyl Oxyl, amine (including anilino), decylamino, aminocarbonylamino, alkoxycarbonylamino, aryloxycarbonylamino, aminesulfonylamino, alkylsulfonylamino and Arylsulfonylamino, fluorenyl, alkylthio, arylthio, heterocyclic thio, sulfonyl, sulfo, alkylsulfinyl and arylsulfinyl, alkylsulfonyl And arylsulfonyl, fluorenyl, aryloxycarbonyl, alkoxycarbonyl, aminemethanyl, arylazo and heterocyclic azo, quinone imine, phosphino, phosphinyl, phosphorus An oxy group, a phosphinylamino group, a decyl group, or a combination thereof.

More specifically, examples of the substituent Q include a halogen atom (for example, a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom), and an alkyl group [indicating a linear, branched, cyclic substituted or unsubstituted one. alkyl. The alkyl group (preferably an alkyl group having a carbon number of 1 to 30, such as methyl, ethyl, n-propyl, isopropyl, t-butyl, n-octyl, eicosyl, 2- a chloroethyl group, a 2-cyanoethyl group, a 2-ethylhexyl group, a cycloalkyl group (preferably a substituted or unsubstituted cycloalkyl group having a carbon number of 3 to 30, such as a cyclohexyl group or a cyclopentyl group) , 4-n-dodecylcyclohexyl), bicycloalkyl (preferably a substituted or unsubstituted bicycloalkyl group having a carbon number of 5 to 30, that is, a bicycloalkane having a carbon number of 5 to 30 is removed. A monovalent group derived from a hydrogen atom, for example, a bicyclo[1.2.2]heptan-2-yl group, a bicyclo[2.2.2]octane-3-yl group, and a tricyclic structure having a large ring structure. The alkyl group (for example, an alkyl group of an alkylthio group) in the substituents described below also represents an alkyl group of this concept, an alkenyl group [indicating a linear, branched, cyclic substituted or unsubstituted alkene. base. The group is an alkenyl group (preferably a substituted or unsubstituted alkenyl group having a carbon number of 2 to 30, such as a vinyl group, an allyl group, a pentenyl group, a geranyl group, or an oleyl group). And a cycloalkenyl group (preferably a substituted or unsubstituted cycloalkenyl group having 3 to 30 carbon atoms, that is, a monovalent group obtained by removing one hydrogen atom of a cycloolefin having 3 to 30 carbon atoms. For example, 2-cyclopenten-1-yl, 2-cyclohexen-1-yl), bicycloalkenyl (substituted or unsubstituted bicycloalkenyl, preferably substituted with a carbon number of 5 to 30 or An unsubstituted bicycloalkenyl group, a monovalent group obtained by removing one hydrogen atom of a bicyclic olefin having one double bond, for example, comprising a bicyclo [2.2.1] hept-2-en-1-yl group, a bicyclo ring [2.2. 2] oct-2-en-4-yl), alkynyl (preferably substituted or unsubstituted having a carbon number of 2 to 30) An alkynyl group, such as an ethynyl group, a propargyl group, a trimethyldecyl ethynyl group, an aryl group (preferably a substituted or unsubstituted aryl group having a carbon number of 6 to 30, such as a phenyl group, a p-tolyl group) , naphthyl, m-chlorophenyl, o-hexadecanylaminophenyl), heterocyclic (preferably 5 or 6 membered substituted or unsubstituted self-aromatic or non-aromatic heterocyclic ring) a monovalent group obtained by removing a hydrogen atom from a compound, more preferably a 5-membered or 6-membered aromatic heterocyclic group having a carbon number of 3 to 30. For example, 2-furyl, 2-thienyl, 2-pyrimidinyl , 2-benzothiazolyl), cyano, hydroxy, nitro, carboxy, alkoxy (preferably substituted or unsubstituted alkoxy having 1 to 30 carbon atoms, such as methoxy, B An oxy group, an isopropoxy group, a tert-butoxy group, a n-octyloxy group, a 2-methoxyethoxy group, an aryloxy group (preferably a substituted or unsubstituted carbon number of 6 to 30) Aryloxy, for example phenoxy, 2-methylphenoxy, 4-tert-butylphenoxy, 3-nitrophenoxy, 2-tetradecylaminophenoxy), decaneoxy a base (preferably a decyloxy group having a carbon number of 3 to 20, such as a trimethyldecyloxy group, a tert-butyl group Dimethyl nonyloxy), heterocyclic oxy group (preferably substituted or unsubstituted heterocyclic oxy group having 2 to 30 carbon atoms, 1-phenyltetrazole-5-oxy group, 2-four Hydropyranyloxy), decyloxy (preferably methyloxy), substituted or unsubstituted alkylcarbonyloxy group having 2 to 30 carbon atoms, substituted or not having a carbon number of 6 to 30 Substituted arylcarbonyloxy, for example, methyl methoxy, ethoxycarbonyl, pentyleneoxy, stearyloxy, benzhydryloxy, p-methoxyphenylcarbonyloxy), amine A methoxy group (preferably a substituted or unsubstituted amine methyl oxy group having a carbon number of 1 to 30, such as N,N-dimethylamine methyl methoxy, N,N-diethylamine Methoxycarbonyl, morpholinylcarbonyloxy, N,N-di-n-octylaminocarbonyloxy, N-n-octylaminemethyloxy), alkoxycarbonyloxy (preferably) a substituted or unsubstituted alkoxycarbonyloxy group having 2 to 30 carbon atoms, such as methoxycarbonyloxy, ethoxycarbonyloxy, tert-butoxycarbonyloxy, n-octylcarbonyl Oxy), aryloxycarbonyloxy (preferably substituted or unsubstituted aryloxycarbonyloxy group having a carbon number of 7 to 30, such as phenoxycarbonyloxy, p-methoxyphenoxy) a carbonyloxy group, a p-hexadecaneoxyphenoxycarbonyloxy group, an amine group (preferably an amine group, a substituted or unsubstituted alkylamino group having 1 to 30 carbon atoms, a carbon number of 6) ~30 substituted or unsubstituted anilino group, such as amine group, methylamino group, dimethylamino group, anilino group, N-methyl-anilino group, diphenylamino group), decylamino group ( Preferred is a mercaptoamine group, a substituted or unsubstituted alkylcarbonylamino group having 1 to 30 carbon atoms, a substituted or unsubstituted arylcarbonylamino group having 6 to 30 carbon atoms, such as a Amidino, acetamino, benzalkonium, lauryl, benzhydryl, 3,4,5-tri-n-octyloxycarbonyl), aminocarbonylamino (preferably a substituted or unsubstituted aminocarbonylamino group having a carbon number of 1 to 30, such as an amine meglumine Base, N,N-dimethylaminocarbonylamino, N,N-diethylaminocarbonylamino, morpholinylcarbonylamino), alkoxycarbonylamino (preferably having a carbon number of 2) ~30 substituted or unsubstituted alkoxycarbonylamino group, such as methoxycarbonylamino group, ethoxycarbonylamino group, tert-butoxycarbonylamino group, n-octadecyloxycarbonylamino group , N-methyl-methoxycarbonylamino), aryloxycarbonylamino (preferably substituted or unsubstituted aryloxycarbonylamino group having a carbon number of 7 to 30, such as phenoxycarbonyl Amine, p-chlorophenoxycarbonylamino, m-octyloxyphenoxycarbonylamino), aminesulfonylamino (preferably substituted or unsubstituted amine having a carbon number of 0-30) Sulfhydrylamino group, for example, aminesulfonylamino, N,N-dimethylaminosulfonylamino, N-n-octylaminosulfonyl Amino), alkylsulfonylamino and arylsulfonylamino (preferably substituted or unsubstituted alkylsulfonylamino group having a carbon number of 1 to 30, carbon number of 6 to 30) a substituted or unsubstituted arylsulfonylamino group, such as methylsulfonylamino, butylsulfonylamino, phenylsulfonylamino, 2,3,5-trichlorophenylsulfonylamino, p-Methylphenylsulfonylamino), mercapto, alkylthio (preferably substituted or unsubstituted alkylthio having a carbon number of 1 to 30, such as methylthio, ethylthio, ortho-hexyl An alkylthio group, an arylthio group (preferably a substituted or unsubstituted arylthio group having a carbon number of 6 to 30, such as a phenylthio group, a p-chlorophenylthio group, a m-methoxyphenylthio group), a heterocyclic thio group (preferably a substituted or unsubstituted heterocyclic thio group having 2 to 30 carbon atoms, such as 2-benzothiazolylthio, 1-phenyltetrazol-5-ylthio), Aminesulfonyl (preferably substituted or unsubstituted sulfonyl group having a carbon number of 0 to 30, such as N-ethylaminesulfonyl, N-(3-dodecyloxypropyl) Aminesulfonyl, N,N-dimethylaminesulfonyl, N-acetamidesulfonyl, N-benzamidesulfonyl, N-(N'-phenylaminecarbamyl)amine Sulfonyl), a group, an alkylsulfinyl group and an arylsulfinyl group (preferably a substituted or unsubstituted alkylsulfinyl group having a carbon number of 1 to 30, a substituted carbon number of 6 to 30 or Unsubstituted arylsulfinylene, such as methylsulfinyl, ethylsulfinyl, phenylsulfinyl, p-methylphenylsulfinyl), alkylsulfonyl and An arylsulfonyl group (preferably a substituted or unsubstituted alkylsulfonyl group having 1 to 30 carbon atoms, a substituted or unsubstituted arylsulfonyl group having 6 to 30 carbon atoms, for example Methylsulfonyl, ethylsulfonyl, phenylsulfonyl, p-methylphenylsulfonyl), fluorenyl (preferably formazan, substituted or unsubstituted carbon 2 to 30) Substituted alkylcarbonyl, substituted or unsubstituted aryl having 7 to 30 carbon atoms a substituted or unsubstituted heterocyclic carbonyl group bonded to a carbonyl group having a carbon number of 4 to 30, such as an ethyl fluorenyl group, a pentylene group, a 2-chloroethyl group, or a stearyl group. , benzylidene, p-octyloxyphenylcarbonyl, 2-pyridylcarbonyl, 2-furylcarbonyl), aryloxycarbonyl (preferably substituted or unsubstituted having a carbon number of 7 to 30) An aryloxycarbonyl group, for example, a phenoxycarbonyl group, an o-chlorophenoxycarbonyl group, a m-nitrophenoxycarbonyl group, a p-tert-butylphenoxycarbonyl group, or an alkoxycarbonyl group (preferably having a carbon number of 2~) 30 substituted or unsubstituted alkoxycarbonyl group, such as methoxycarbonyl, ethoxycarbonyl, tert-butoxycarbonyl, n-octadecyloxycarbonyl), aminemethanyl (preferably carbon) a substituted or unsubstituted amine carbenyl group of 1 to 30, such as an amine methyl sulfonyl group, an N-methylamine methyl fluorenyl group, an N,N-dimethylamine carbaryl group, N,N-di - n-octylamine methyl sulfonyl, N-(methylsulfonyl)amine carbaryl, arylazo and heterocyclic azo (preferably substituted or not having a carbon number of 6 to 30) Substituted aryl azo group, substituted or unsubstituted heterocyclic ring having 3 to 30 carbon atoms a nitrogen group, for example, a phenylazo group, a p-chlorophenylazo group, a 5-ethylthio-1,3,4-thiadiazol-2-ylazo group, a quinone imine group (preferably N-succinimide, N-phthalimin), phosphino group (preferably substituted or unsubstituted phosphino group having a carbon number of 2 to 30, such as dimethylphosphino, diphenyl a phosphinyl group, a methyl phenoxyphosphino group, a phosphinyl group (preferably a substituted or unsubstituted phosphinyl group having a carbon number of 2 to 30, such as a phosphinyl group or a dioctyloxy group) a phosphinyl group, a diethoxyphosphinyl group, a phosphinyloxy group (preferably a substituted or unsubstituted phosphorusoxy group having a carbon number of 2 to 30, such as a diphenoxyphosphoxy group, Dioctyloxyphosphoryl), phosphinylamino (preferably substituted or unsubstituted phosphinylamino group having a carbon number of 2 to 30, such as dimethoxy phosphinylamine a dimethylaminophosphinylamino group, a decyl group (preferably a substituted or unsubstituted decyl group having a carbon number of 3 to 30, such as a trimethyldecyl group, a third butyl group) Base alkyl, phenyl dimethyl fluorenyl) and the like.

In the composition of the present invention, the content of the additive (B) is not particularly limited, and the content of the additive (B) is 100 parts by mass based on the content of the conductive particles (A) in terms of the effect of the present invention being more excellent. The ratio is preferably from 0.1 part by mass to 27.0 parts by mass, more preferably from 1.0 part by mass to 20.0 parts by mass, even more preferably from 5.0 part by mass to 18.0 part by mass.

Further, the ratio of the content of the additive (B) is not particularly limited with respect to the total mass of the composition, and in terms of the more excellent effects of the present invention, it is preferably 0.01% by mass to 15% by mass based on the total mass of the composition. % is more preferably 0.5% by mass to 10.0% by mass, particularly preferably 1.5% by mass to 7.0% by mass.

Further, the content of the additive (B) is a total amount of the compound represented by the formula (I), the compound represented by the formula (II), and the compound represented by the formula (III). Further, when only the compound represented by the formula (I) is used, the content of the compound represented by the formula (II) and the compound represented by the formula (III) is calculated by 0.

<arbitrary component>

(solvent)

The composition of the present invention preferably contains a solvent from the viewpoint of easiness of viscosity adjustment and coatability. The solvent functions as a dispersion medium of the conductive particles (A).

The type of the solvent is not particularly limited, and for example, water, or an alcohol or an ether can be used. An organic solvent such as an ester. Among them, water is preferred.

The content of the solvent is not particularly limited, and is preferably 20% by mass to 90% by mass based on the total mass of the composition in terms of suppressing an increase in viscosity and further improving workability.

(other ingredients)

The composition of the present invention may contain components other than the above components. For example, a dispersant, a surfactant, or the like may be contained in the composition of the present invention.

Further, in terms of the effect of the present invention being more excellent, it is preferred that the composition contains substantially no resin (for example, a thermoplastic resin or a thermosetting resin). The content of the resin is preferably 3 parts by mass or less, more preferably 1 part by mass or less, based on 100 parts by mass of the conductive particles (A) in the composition.

<Method for Preparing Composition for Conductive Film Formation>

The preparation method of the composition of the present invention is not particularly limited, and a known method can be employed. For example, a composition can be obtained by adding the conductive particles (A) and the additive (B) to the solvent, followed by an ultrasonic method (for example, treatment using an ultrasonic homogenizer), and mixing. A well-known method such as a machine method, a three-roll method, or a ball mill method is expanded.

The conductive film obtained from the composition of the present invention exhibits excellent characteristics, and in particular, the composition of the present invention is effectively used as a composition for forming a conductive film for forming an electrode of a field effect transistor, particularly an organic thin film transistor. The electrode may be any of a source electrode, a drain electrode, and a gate electrode, but is particularly effective for the source electrode and the drain electrode.

In addition, as described above, the additive (B) contained in the composition of the present invention functions as an excellent migration inhibitor, and as a result, it exhibits excellent insulation reliability, and thus is also effectively used for forming a wiring board ( For example, a composition for forming a conductive film of a wiring such as a printed wiring board.

[Organic Thin Film Electrode]

The organic thin film transistor of the present invention is an organic thin film transistor having an electrode (particularly, a source electrode and a drain electrode) formed using the composition of the present invention.

One embodiment of the organic thin film transistor of the present invention will be described with reference to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing one embodiment of an organic thin film transistor of the present invention.

In FIG. 1, the organic thin film transistor 100 includes a substrate 10, a gate electrode 20 disposed on the substrate 10, a gate insulating film 30 covering the gate electrode 20, and a gate electrode 20 and a gate electrode 20. The side is the source electrode 40 and the drain electrode 42 which are in surface contact with the opposite side, the organic semiconductor layer 50 covering the surface of the gate insulating film 30 between the source electrode 40 and the drain electrode 42, and the seal covering each member Layer 60. The organic thin film transistor 100 is a bottom gate-bottom contact type organic thin film transistor.

In FIG. 1, the source electrode 40 and the drain electrode 42 are formed using the composition of the present invention, but are not limited to the above embodiment, and preferably the source electrode 40 and the drain electrode 42 are provided. At least one of the gate electrodes 20 is formed using the composition of the present invention. For example, all of the gate electrode 20, the source electrode 40, and the drain electrode 42 may be formed using the composition of the present invention, or only the source electrode 40 (or the gate electrode 42) may be formed using the composition of the present invention. .

Hereinafter, the substrate, the gate electrode, the gate insulating film, the source electrode, the drain electrode, the organic semiconductor layer, the sealing layer, and the respective forming methods will be described in detail.

<Substrate>

The substrate functions to support a gate electrode, a source electrode, a drain electrode, and the like which will be described later.

The type of the substrate is not particularly limited, and examples thereof include a plastic substrate, a glass substrate, and a ceramic substrate. Among them, a glass substrate or a plastic substrate is preferred from the viewpoint of applicability and cost in each element.

Examples of the material of the plastic substrate include thermosetting resins (for example, epoxy resins, phenol resins, polyimide resins, polyester resins (for example, polyethylene terephthalate (PET), polynaphthalene). Polyethylene Naphthalate (PEN), etc., or a thermoplastic resin (for example, phenoxy resin, polyether oxime, polyfluorene, polyphenyl hydrazine, etc.).

Examples of the material of the ceramic substrate include alumina, aluminum nitride, zirconium oxide, ruthenium, tantalum nitride, and tantalum carbide.

Examples of the material of the glass substrate include soda glass, potassium glass, borosilicate glass, quartz glass, aluminum bismuth glass, lead glass, and the like.

<gate electrode>

Examples of the material of the gate electrode include metals such as gold (Au), silver, aluminum (Al), copper, chromium, nickel, cobalt, titanium, platinum, rhodium, magnesium, calcium, barium, and sodium; and InO ₂ . Conductive oxides such as SnO ₂ and ITO; conductive polymers such as polyaniline, polypyrrole, polythiophene, polyacetylene, and polydiacetylene; semiconductors such as lanthanum, cerium, and gallium arsenide (GaAs); fullerene and carbon Carbon materials such as rice pipes and graphite. Among them, a metal is preferable, and silver or aluminum is more preferable.

The thickness of the gate electrode is not particularly limited, but is preferably 20 nm to 200 nm.

The method of forming the gate electrode is not particularly limited, and examples thereof include a method of vacuum-depositing or sputtering an electrode material on a substrate, a method of coating or printing a composition for electrode formation, and the like. Further, when the electrode is patterned, examples of the patterning method include a photolithography method; a printing method such as inkjet printing, screen printing, lithography, and letterpress printing; and a mask vapor deposition method.

<gate insulating film>

Examples of the material of the gate insulating film include polymethyl methacrylate, polystyrene, polyvinyl phenol, polyimide, polycarbonate, polyester, polyvinyl alcohol, polyvinyl acetate, and polyamine. Polymers such as carbazate, polyfluorene, polybenzoxazole, polysesquioxanes, epoxy resins, phenol resins; oxides such as cerium oxide, aluminum oxide, and titanium oxide; and nitrides such as cerium nitride Wait. Among the materials, in terms of the phase of the organic semiconductor layer, a polymer is preferred.

When a polymer is used as the material of the gate insulating film, a crosslinking agent (for example, melamine) is preferably used in combination. By using a crosslinking agent in combination, the polymer is crosslinked, and the durability of the formed gate insulating film is improved.

The film thickness of the gate insulating film is not particularly limited, but is preferably 100 nm to 1000 nm.

The method of forming the gate insulating film is not particularly limited, and examples thereof include a method of applying a composition for forming a gate insulating film on a substrate on which a gate electrode is formed. Method; method of vapor-depositing or sputtering a gate insulating film material, and the like. The method of applying the composition for forming a gate insulating film is not particularly limited, and a known method (bar coating method, spin coating method, knife coating method, or doctor blade method) can be used.

When a gate insulating film is formed by applying a composition for forming a gate insulating film, heating (baking) may be performed after coating in order to remove a solvent, crosslink, or the like.

<Source electrode, drain electrode>

As described above, the source electrode and the drain electrode are formed using the composition of the present invention.

The channel length of the source electrode and the drain electrode is not particularly limited, but is preferably 5 μm to 100 μm. The channel width of the source electrode and the drain electrode is not particularly limited, but is preferably 50 μm to 500 μm.

The method of forming the source electrode and the drain electrode is not particularly limited, and examples thereof include a method including a coating film forming step and a sintering step. Hereinafter, each step will be described.

(coating film forming step)

This step is a step of applying the composition of the present invention onto a substrate on which a gate electrode and a gate insulating film are formed.

The method of applying the composition of the present invention onto a substrate to form a coating film is not particularly limited, and a known method can be employed.

Examples of the coating method include a two-roll coater, a slit coater, an air knife coater, a bar coater, a sliding hopper, a spray coater, and a blade coater (blade). Coater), doctor coater, squeeze coater (squeeze coater), reverse roll coater, transfer roll coater, extrusion coater, curtain coater, dip coater, die A coating machine, a gravure roll coating method, a screen printing method, a dip coating method, a spray coating method, a spin coating method, an inkjet method, and the like.

Further, after the composition of the present invention is applied onto a substrate, if necessary, a drying treatment may be performed in order to remove the solvent. As a method of the drying treatment, a previously known method can be used.

(sintering step)

In this step, the coating film formed in the coating film forming step is supplied with energy such as heating or light irradiation, and the conductive particles (A) in the composition are sintered to form a conductive film.

The heating condition is not particularly limited, and the heating temperature is preferably from 100 ° C to 300 ° C, and the heating time is preferably from 10 minutes to 60 minutes.

The heating mechanism is not particularly limited, and a known heating mechanism such as an oven or a hot plate can be used.

The light source used in the light irradiation treatment is not particularly limited, and examples thereof include a mercury lamp, a metal halide lamp, a xenon (Xe) lamp, a chemical lamp, and a carbon arc lamp.

<Organic semiconductor layer>

The organic semiconductor material constituting the organic semiconductor layer is not particularly limited, and a known material used as an organic semiconductor layer of an organic semiconductor transistor can be used. Specifically, it can be exemplified: 6,13-bis(triisopropyldecyl ethynyl) pentacene (TIPS pentacene), tetramethyl pentacene, perfluoro pentacene, and the like, triethyl, triethyl Alkyl acetylene Diethylsilylethynyl-Antradithiophene (TES-ADT), diF-TES-ADT (2,8-difluoro-5,11-bis(triethyldecylethynyl)phosphonium dithiophene) ,2,7-diphenyl[1]benzothiophene[3,2-b][1]benzothiophene (DPh-BTBT), 2,7-dialkyl[1]benzothiophene [3,2 -b][1] Benzothiophene benzothiophene such as benzothiophene (Cn-BTBT), 2,9-dialkyl-dinaphtho[2,3-b:2',3'-f] Di-naphthothiophenethiophenes such as thieno[3,2-b]thiophene (Cn-DNTT), dioxins such as peri-Xanthenoxanthene, red fluorene, C60 , [6,6]-phenyl-C61-butyric acid methyl ester (PCB6) and other fullerenes, copper phthalocyanine, copper fluoride phthalocyanine, etc. Phthalocyanines, poly(3-alkylthiophene) (P3RT), poly 3,3''-dialkyl-quaterthiophene (PQT), poly(3-hexyl) Polythiophenes such as poly(3-hexylthiophene), P3HT, poly 3,3''-dialkyl-quaterthiophene (PQT), poly[2, Polythienothiophenes such as 5-bis(3-dodecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT).

The thickness of the organic semiconductor layer is not particularly limited, but is preferably 10 nm to 200 nm.

The method of forming the organic semiconductor layer is not particularly limited, and for example, a method in which an organic semiconductor material is dissolved in a solvent is applied to a substrate on which a gate electrode, a gate insulating film, a source electrode, and a gate electrode are formed. A method of a composition for an organic semiconductor or the like. A specific example of the method of applying the composition for an organic semiconductor is the same as the method of applying the composition for forming a gate insulating film. When the organic semiconductor layer is formed by coating a composition for an organic semiconductor, it may be added after coating in order to remove a solvent, crosslink, or the like. Hot (bake).

<sealing layer>

From the viewpoint of durability, the organic thin film transistor of the present invention preferably has a sealing layer on the outermost layer. As the sealing layer, a known sealant can be used.

The thickness of the sealing layer is not particularly limited, but is preferably 0.2 μm to 10 μm.

The method of forming the sealing layer is not particularly limited, and for example, a composition for forming a sealing layer is applied onto a substrate on which a gate electrode, a gate insulating film, a source electrode, a gate electrode, and an organic semiconductor layer are formed. Method, etc. A specific example of the method of applying the composition for forming a sealing layer is the same as the method of applying the composition for forming a gate insulating film. When the organic semiconductor layer is formed by applying the composition for forming a sealing layer, it is possible to perform heating (baking) after coating in order to remove the solvent, crosslink, or the like.

2 is a schematic cross-sectional view showing another embodiment of the organic thin film transistor of the present invention.

In FIG. 2, the organic thin film transistor 200 includes a substrate 10, a gate electrode 20 disposed on the substrate 10, a gate insulating film 30 covering the gate electrode 20, and an organic semiconductor layer disposed on the gate insulating film 30. 50. A source electrode 40 and a drain electrode 42 disposed on the organic semiconductor layer 50, and a sealing layer 60 covering each member. Here, the source electrode 40 and the drain electrode 42 are formed using the composition of the present invention. The organic thin film transistor 200 is a top contact type organic thin film transistor.

The substrate, the gate electrode, the gate insulating film, the source electrode, the drain electrode, the organic semiconductor layer, and the sealing layer are as described above.

In the above, in FIG. 1 and FIG. 2, the bottom gate-bottom contact type has The morphology of the thin film transistor and the bottom gate-top contact type organic thin film transistor is described in detail, but the conductive film forming composition of the present invention can also be applied to a top gate-bottom contact type organic thin film transistor, And a top gate-top contact organic thin film transistor.

Further, the organic thin film transistor can be preferably used for electronic paper, display elements, and the like.

[Examples]

The examples are shown below, but the invention is not limited to the examples.

<Preparation of Silver Ink A1>

Disperbyk-190 (manufactured by BYK-Chemie Co., Ltd.) (7.36 g in terms of nonvolatile matter) as a dispersing agent was dissolved in water (100 mL) (solution a). Then, 50.00 g (294.3 mmol) of silver nitrate was dissolved in water (200 mL) (solution b). Solution a was mixed with solution b and stirred. Into the resulting mixture, an aqueous solution of 85 mass% of N,N-diethylhydroxylamine (78.71 g) (750.5 mmol based on N,N-diethylhydroxylamine) was slowly added dropwise at room temperature. Then, a solution obtained by dissolving Disperbyk-190 (7.36 g) in water (1000 mL) was slowly added dropwise at room temperature. The resulting suspension was passed through an ultrafiltration unit (Vivaflow 50 manufactured by Sartorius Stedim, molecular weight cutoff: 100,000, number of units: 4), and purified. The water was purified to about 5 L of exudate from the ultrafiltration unit. The supply of purified water was stopped and concentrated to obtain a dispersion of 50 g of silver nanoparticles (silver ink A1). The content of the solid content in the silver ink A1 was 32% by mass. Thermogravimetric analyzer (Thermogravimetry-Differential Thermal Analyzer, TG-DTA) The content of silver in the solid content was measured and found to be 97.0% by mass.

<Example 1 to Example 13, Comparative Example 1 to Comparative Example 2>

When the solution a and the solution b were mixed, the additive (B) shown in Table 1 (migration inhibitor) was prepared in such a manner as to be "the content of the additive (B)" shown in Table 1 in addition to the solution a and the solution b. In addition to this, silver ink A2 to silver ink A16 were prepared in the same order as in the preparation of silver ink A1. The silver ink corresponds to a composition for forming a conductive film.

<Insulation reliability evaluation (one)>

On a substrate obtained by laminating ABF-GX13 (manufactured by Ajinomoto Fine-Techno Co., Ltd.) on an FR4 epoxy glass plate, STS-200 (YD) was used so that the film thickness after sintering was 200 nm. Silver ink A1 was applied by spray coating method, manufactured by YD Mechatro Solutions. Then, sintering was performed using an oven (180 ° C, 2 hours) to form a silver film on the substrate. The formed silver film was etched into a comb shape of L/S = 40 μm / 40 μm by photolithography to form a comb-shaped silver film (silver wiring). At this time, PHOTEC H-7025 (manufactured by Hitachi Chemical Co., Ltd.) was used as the dry film resist, and Agrip 940 (manufactured by Meltex Co., Ltd.) was used as the silver etching solution. Then, Cytop CTL107MK (manufactured by AGC Co., Ltd.) was spin-coated on the silver wiring so that the film thickness after drying became 1 μm, and then dried in an oven at 140 ° C for 20 minutes to form a sealing layer, thereby fabricating an insulation reliability evaluation wiring. Substrate.

The obtained wiring board was subjected to a life test under the conditions of a humidity of 85%, a temperature of 85 ° C, a pressure of 1.0 atm, and a voltage of 30 V (using device: manufactured by ESPEC, EHS-221MD) . Specifically, in the environment, the voltage is applied to adjacent silver wirings. Then, the time until the short circuit occurred between the silver wirings due to the electrochemical migration (time T until the resistance value between the silver wirings became 1 × 10 ⁵ Ω) was measured. The time T when the silver ink A1 is used is set to T1 (reference).

Then, using the silver ink A2 to the silver ink A16 to which the additive (B) was added (the composition for forming a conductive film of the examples and the comparative examples), the wiring board for insulation reliability evaluation was produced in the same manner as the silver ink A1. And measure the life. The time T when the silver ink An (n = 2 to 16) is used is set to Tn.

The silver ink A2 to the silver ink A16 (the conductive film forming composition of the examples and the comparative examples) were calculated for Tn/T1, and the insulation reliability was evaluated based on the following criteria. The results are shown in Table 1. Practically, it is preferably A to C, more preferably A or B, and particularly preferably A.

"A": The case of Tn/T1≧5

"B": 5>Tn/T1≧2

"C": 2>Tn/T1>1

"D": 1≧Tn/T1 situation

<Evaluation of mobility (field efficiency mobility)>

On a glass substrate (EAGLE XG: manufactured by Corning), A1 (thickness: 50 nm) which became a gate electrode was vapor-deposited. A composition for forming a gate insulating film on A1 (polyvinyl phenol/melamine = 1 part by mass / 1 part by mass (w/w) of Propylene Glycol Monomethyl Ether Acetate (PGMEA) Solution (solid content concentration: 2% by mass)), then, at Baking was performed at 150 ° C for 60 minutes to form a gate insulating film having a film thickness of 400 nm. On the gate insulating film, the ink ink device DMP-2831 (manufactured by FUJIFILM Dimatix Co., Ltd.) was used to write the silver ink A1 into a source electrode shape and a drain electrode shape (channel length). It is 40 μm and the channel width is 200 μm). Then, baking was performed in an oven at 180 ° C for 30 minutes, and sintering was performed to form a source electrode and a drain electrode. On the source electrode and the drain electrode, a toluene solution of 2,8-difluoro-5,11-bis(triethyldecylethynyl)phosphonium dithiophene (Aldrich) was spin-coated. Baking was performed at 140 ° C for 15 minutes to form an organic semiconductor layer having a thickness of 100 nm. On the organic semiconductor layer, Cytop CTL-107MK (manufactured by AGC Corporation) was spin-coated at 140 ° C for 20 minutes to form a sealing layer (uppermost layer) having a thickness of 2 μm, thereby fabricating an organic thin film transistor ( Bottom gate-bottom contact type).

The electrodes of the obtained organic thin film transistor were connected to respective terminals of a manual detector connected to a semiconductor parameter analyzer (4155C, manufactured by Agilent Technologies) to evaluate a field effect transistor (FET). . Specifically, the field effect mobility ([cm ² /V.sec]) was calculated by measuring the characteristics of the drain current-gate voltage (Id-Vg). A total of five organic thin film transistors were produced in the same manner, and field-effect mobility was calculated. The average value of the field-effect mobility of the five organic thin film transistors using the silver ink A1 as the source electrode and the drain electrode was set to μ1.

Then, using the silver ink A2 to silver ink A16 to which the additive (B) was added (the conductive film forming composition of the examples and the comparative examples), an organic thin film transistor was produced in the same manner as the silver ink A1, and the field was calculated. The average of the mobility. The average value of the field effect mobility when silver ink An (n = 2 to 16) was used was set to μn.

The silver ink A2 to the silver ink A16 (the composition for forming a conductive film of the examples and the comparative examples) were calculated to have μn/μ1, and the field-effect mobility was evaluated based on the following criteria. The results are shown in Table 1. Practically, it is preferably A to C, more preferably A or B, and particularly preferably A.

"A": μn/μ1≧0.8

"B": 0.8>μn/μ1≧0.5

"C": 0.5>μn/μ1≧0.1

"D": 0.1>μn/μ1

<Insulation Reliability Evaluation (Part 2)>

The durability test of the organic thin film transistor obtained by using the silver ink A1 as described above was carried out according to the following method. First, the obtained organic thin film transistor was placed in a constant temperature and humidity chamber at a temperature of 50 ° C and a humidity of 50%, and voltages of Vs = -20 V, Vd = 0 V, and Vg = -20 V were applied. The measurement of the transistor characteristics was performed every 10 minutes, and the time during which the threshold voltage Vth was observed to be shifted by 10 V or more with respect to the initial value was calculated as the life time (T1) of the transistor.

Then, using the silver ink A2 to silver ink A16 to which the additive (B) was added (the conductive film forming composition of the examples and the comparative examples), an organic thin film transistor was produced in the same manner as in the case of using the silver ink A1. Then, in the same manner as the method of obtaining T1, the lifetime (Tn) of the transistor when silver ink An (n = 2 to 16) was used was calculated.

Tn/T1 was obtained from the calculated T1 and Tn, and evaluated based on the following criteria.

"A": Tn/T1≧10

"B": 10>Tn/T1≧5

"C": 5>Tn/T1≧1.5

"D": 1.5>Tn/T1

The results obtained showed the same tendency as the <insulation reliability evaluation (one)>. More specifically, for example, the "insulation reliability evaluation" which is the evaluation result of <insulation reliability evaluation (one)> of the first embodiment shown in Table 1 below is "B", but <insulation reliability evaluation The evaluation result of 2) is also "B". In the examples 2 to 16 and the comparative examples 1 to 2, the evaluation results of the <insulation reliability evaluation (one)> are the same as those of the <insulation reliability evaluation (second)>.

In addition, the details of the additive (B) in Table 1 are as follows.

. M1: 3-pyridine sulfonic acid (manufactured by Wako)

. M2: 2-(N-morpholinyl)ethanesulfonic acid (manufactured by Tokyo Chemical Industry Co., Ltd.)

. M3: 1-(3-sulfopropyl)pyridinium hydroxide intramolecular salt (manufactured by Tokyo Chemical Industry Co., Ltd.)

. M4: 2-dimethylhexyl ammonium ethyl phosphate

. M5: dodecylsulfonic acid triethanolamine salt

. M6: NISSANANON BLJ (N-dimethylalkyl lauryl betaine: manufactured by Nippon Oil)

. M7: NDSB-195 (made by Wako)

. M8: a compound represented by the following formula (combined by the method described in Journal of Molecular Liquids, 2011, vol. 162, #2, p. 95-99. Further, "Ph" in the following formula Indicates phenyl)

. M9: a compound represented by the following formula (synthesized by the method described in Canadian Journal of Chemistry, 1983, vol. 61, p. 235-243)

In addition, the "content of the additive (B)" in the above-mentioned Table 1 means the content (% by mass) of the additive (B) with respect to the composition for forming a conductive film.

As can be seen from Table 1, the organic thin film transistors in which the electrodes were formed using the conductive film forming compositions of Examples 1 to 13 containing the additive (B) exhibited excellent high mobility (field-effect migration). According to the insulation reliability evaluation, it can be said that the insulation reliability is also excellent.

According to the comparison of Example 3 to Example 6, it was confirmed that the balance of the insulation reliability and the mobility was more excellent when the content of the additive (B) was 1.5 to 7.0 mass with respect to the total mass of the composition.

Further, according to the comparison between Example 2, Example 5, Example 8 and Example 10, it was confirmed that the compound represented by the formula (III) exhibited more excellent effects.

On the other hand, the organic thin film transistor in which the electrode is formed using the composition for forming a conductive film of Comparative Example 1 to Comparative Example 2 which does not contain the specific additive (B) has insufficient insulation reliability and/or mobility.

10‧‧‧Substrate

20‧‧‧gate electrode

30‧‧‧gate insulating film

40‧‧‧Source electrode

42‧‧‧汲electrode

50‧‧‧Organic semiconductor layer

60‧‧‧ Sealing layer

100‧‧‧Organic film transistor

Claims (11)

A conductive film forming composition comprising: conductive particles (A) and an additive (B) selected from the group consisting of a compound represented by the formula (I) and a formula (II) At least one of the group consisting of the compound and the compound represented by the formula (III); and the formula (I) C ⁺ -L-SO ₃ ^- (in the formula (I), the C ⁺ group is selected from the group consisting of a cation of the group consisting of the general formula (A) to the general formula (D); In the general formula (A), R ₁ to R ₃ each independently represent an aliphatic hydrocarbon group having 1 to 5 carbon atoms or an aromatic hydrocarbon group; and R ₁ to R ₃ may be bonded to each other to form a ring structure; * represents a bond. In the formula (B), R ₄ represents an aliphatic hydrocarbon group having a carbon number of 1 to 5, -NR ₁₉ R ₂₀ , -N=CR ₂₁ R ₂₂ , -CR ₂₃ =NR ₂₄ , or -CR _B1 R _B2 -NR _B3 R _B4 ; Here, R ₁₉ to R ₂₄ and R _B1 to R _B4 each independently represent a hydrogen atom or a hydrocarbon group; R ₁₉ and R ₂₀ may be bonded to each other to form a ring structure; and R ₅ represents a hydrogen atom. And an aliphatic hydrocarbon group having 1 to 5 carbon atoms, an alkoxy group, an alkylthio group, a hydroxyl group, a fluorenyl group or -NR ₂₅ R ₂₆ ; wherein R ₂₅ and R ₂₆ each independently represent a hydrogen atom or a hydrocarbon group; Bonded to each other to form a ring structure; R ₆ represents an aliphatic hydrocarbon group having a carbon number of 1 to 5, an alkoxy group, an alkylthio group, a hydroxyl group, a decyl group, -NR ₂₇ R ₂₈ , -N=CR ₂₉ R ₃₀ , or - CR ₃₁ =NR ₃₂ ; Here, R ₂₇ to R ₃₂ each independently represent a hydrogen atom or a hydrocarbon group; and R ₂₇ and R ₂₈ may be bonded to each other to form a ring structure; wherein, when R ₅ and R ₆ are different from each other as the alkoxy group, a hydroxyl group, a mercapto group or alkylthio, R _4, R ₅ and R ₆ is Simultaneously _{-NR 19 R 20, -NR 25 R} 26 or _{-NR 27 R 28; R 4,} R 5 and R ₆ each may be bonded to each other to form a ring structure; * represents a bonding position; general formula (C) , R ₇ to R ₉ each independently represent an aliphatic hydrocarbon group having 1 to 5 carbon atoms or an aromatic hydrocarbon group; R ₇ to R ₉ may be bonded to each other to form a ring structure; * represents a bonding position; In D), R ₁₀ and R ₁₁ each independently represent an aliphatic hydrocarbon group having 1 to 5 carbon atoms or an aromatic hydrocarbon group; and R ₁₀ and R ₁₁ may be bonded to each other to form a ring structure; * represents a bonding position; L represents a divalent linking group) (In the formula (II), R ₅₁ to R ₅₃ each independently represent a linear or branched alkyl or alkenyl group having a carbon number of 1 to 5; R ₅₄ represents a hydrogen atom or an alkyl group; and A ₁ represents a carbon number of 1 to 3 alkylene or hydroxyalkylene group) (III) XLY (in the formula (III), X represents a basic group; L represents a single bond or a divalent linking group; Y represents -SO ₃ H Or -P=O(OH)OR group; R represents a hydrogen atom or an alkyl group having a carbon number of 1 to 5). The composition for forming a conductive film according to claim 1, wherein the additive (B) is a compound represented by the formula (III), and Y is -SO ₃ H. The composition for forming a conductive film according to claim 1, wherein the additive (B) is a compound represented by the formula (I), and C ⁺ represents a compound selected from the formula (A). a cation of the group consisting of the formula (B). The composition for forming a conductive film according to Item 1, wherein the additive (B) is a compound represented by the above formula (II). The conductive film-forming composition according to any one of claims 1 to 4, wherein the conductive particles (A) are selected from the group consisting of Ag, Cu, Al, Ni, and Ta. Group of metal particles. The composition for forming a conductive film according to any one of claims 1 to 4, wherein the content of the additive (B) is 1.5% by mass based on the total mass of the composition for forming a conductive film. 7.0% by mass. A conductive film which is formed using the composition for forming a conductive film according to any one of the first to sixth aspects of the invention. An organic thin film transistor comprising an electrode formed by using the composition for forming a conductive film according to any one of the first to sixth aspects of the invention. An electronic paper using the organic thin film transistor as described in claim 8 of the patent application. A display element using the organic thin film transistor as described in claim 8 of the patent application. A wiring board which is formed by using the conductive film forming composition according to any one of the first to sixth aspects of the invention.