TW201526102A - A baffle assembly and an apparatus for treating a substrate with the baffle - Google Patents
A baffle assembly and an apparatus for treating a substrate with the baffle Download PDFInfo
- Publication number
- TW201526102A TW201526102A TW103139616A TW103139616A TW201526102A TW 201526102 A TW201526102 A TW 201526102A TW 103139616 A TW103139616 A TW 103139616A TW 103139616 A TW103139616 A TW 103139616A TW 201526102 A TW201526102 A TW 201526102A
- Authority
- TW
- Taiwan
- Prior art keywords
- plate
- injection plate
- hole
- variable
- injection
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
Description
本發明係關於一種基板處理設備,更詳細而言係關於一種利用電漿來對基板進行處理的設備。 The present invention relates to a substrate processing apparatus, and more particularly to an apparatus for processing a substrate using plasma.
為了製造半導體元件,要求於晶圓等半導體基板上實施蒸鍍、拍攝、蝕刻、灰化(ashing)、洗淨、研磨等多種製程。其中,如蒸鍍、蝕刻及灰化製程般的多個製程係於腔室內利用電漿或氣體對晶圓等半導體基板進行處理。 In order to manufacture a semiconductor element, it is required to perform various processes such as vapor deposition, photographing, etching, ashing, washing, and polishing on a semiconductor substrate such as a wafer. Among them, a plurality of processes such as vapor deposition, etching, and ashing processes are performed on a semiconductor substrate such as a wafer by plasma or gas in a chamber.
圖1係表示利用普通電漿的基板處理設備的剖面圖。 Fig. 1 is a cross-sectional view showing a substrate processing apparatus using ordinary plasma.
參照圖1,普通的基板處理設備係利用電漿源13使通過氣體供給單元11而注入至製程腔室12內部之氣體轉換為電漿。由電漿源生成之電漿通過製程腔室12內的擋板14而供給至基板15的上部。 Referring to Fig. 1, a conventional substrate processing apparatus converts a gas injected into a process chamber 12 through a gas supply unit 11 into a plasma by a plasma source 13. The plasma generated by the plasma source is supplied to the upper portion of the substrate 15 through the baffle 14 in the process chamber 12.
為了提高基板處理設備內之電漿的均一度,於擋板14形成多個孔。然而,因基板處理設備的製程處理室16內的構造與電漿的流動等因素,會引起對於基板15之電漿處理製程率的均一度下降的問題。 In order to increase the uniformity of the plasma in the substrate processing apparatus, a plurality of holes are formed in the baffle 14. However, due to factors such as the configuration in the process chamber 16 of the substrate processing apparatus and the flow of the plasma, there is a problem that the uniformity of the plasma processing rate of the substrate 15 is lowered.
擋板14能根據噴射孔之位置與數量等的變化而控制製程的均一度。然而,為了找尋1個裝備中最合理的條件,一般而言,須交替使用噴射孔之位置與數量等不同的多個擋板,因此,時間與費用亦會相應地增加。 The baffle 14 can control the uniformity of the process according to changes in the position and number of the injection holes and the like. However, in order to find the most reasonable condition of one equipment, in general, a plurality of baffles having different positions and numbers of injection holes are alternately used, and accordingly, time and cost are correspondingly increased.
而且,當相同裝備、或相同電漿產生設備中使用多種製程氣體時,電漿分佈(plasma profile)會變化。該情況下,當使用普通擋板時,會影響製程均一度。 Moreover, when a plurality of process gases are used in the same equipment or the same plasma generating apparatus, the plasma profile changes. In this case, when the ordinary baffle is used, the process uniformity is affected.
[專利文獻1]專利公開第2012-0074877號說明書。 [Patent Document 1] Patent Publication No. 2012-0074877.
本發明之一目的在於提供一種能利用1個擋板組件來調節1個裝備中最合理的電漿或氣體的噴射均一度的基板處理設備。 SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus capable of adjusting the ejection uniformity of the most rational plasma or gas in one apparatus by using one shutter assembly.
而且,本發明之另一目的在於提供一種能利用1個擋板組件來調節多種基板處理設備中最合理的電漿或氣體的噴射均一度的擋板組件。 Moreover, it is another object of the present invention to provide a baffle assembly that utilizes a baffle assembly to adjust the most uniform plasma or gas jet uniformity of a plurality of substrate processing equipment.
本發明所欲解決之課題並不限於此,關於未提及之其他課題,業者可根據以下記載而明確地理解。 The subject matter to be solved by the present invention is not limited thereto, and other problems not mentioned will be clearly understood by the following description.
本發明提供一種基板處理設備。根據一實施形態,基板處理設備包括:製程腔室;基板支撐單元,其以於前述製程腔室內支撐基板的方式而設;擋板組件,其 具有第1噴射板與第2噴射板及驅動單元,該第1噴射板與第2噴射板位於前述製程腔室內的前述基板支撐單元的上部、且彼此上下積層,該驅動單元係用於使前述第2噴射板以其中心為軸旋轉;及氣體供給單元,其向前述第1噴射板及前述第2噴射板的上部供給氣體;且,前述擋板組件係以能藉由前述第2噴射板之旋轉角度而按前述基板的區域來調節電漿或氣體的噴射量的方式而設。 The invention provides a substrate processing apparatus. According to an embodiment, the substrate processing apparatus includes: a processing chamber; a substrate supporting unit configured to support the substrate in the processing chamber; the shutter assembly, a first ejecting plate and a second ejecting plate and a driving unit, wherein the first ejecting plate and the second ejecting plate are located above an upper portion of the substrate supporting unit in the processing chamber, and the driving unit is configured to a second injection plate that rotates about a center thereof; and a gas supply unit that supplies a gas to an upper portion of the first injection plate and the second injection plate; and the baffle assembly is configured to be capable of passing the second injection plate The rotation angle is set to adjust the amount of plasma or gas to be injected in the area of the substrate.
再者,於前述第1噴射板之中央區域,形成有於上下方向貫穿之第1固定孔;於前述第1噴射板之邊緣區域,形成有於上下方向貫穿之第2固定孔。 Further, a first fixing hole penetrating in the vertical direction is formed in a central portion of the first ejection plate, and a second fixing hole penetrating in the vertical direction is formed in an edge region of the first ejection plate.
再者,於前述第2噴射板形成有:第1可變孔,其配置於前述第2噴射板之中央區域及邊緣區域;第2可變孔,其配置於前述第2噴射板之中央區域;及第3可變孔,其配置於前述第2噴射板之邊緣區域;且,前述第2噴射板之中央區域係與前述第1噴射板之中央區域對向;前述第2噴射板之邊緣區域係與前述第1噴射板之邊緣區域對向;當前述第2噴射板位於第1位置時,前述第1可變孔以與前述第1固定孔及前述第2固定孔對向的方式而設;當前述第2噴射板位於與前述第1位置不同的第2位置時,前述第2可變孔以與前述第1固定孔對向的方式而設;當前述第2噴射板位於與前述第1位置及前述第2位置不同的第3位置時,前述第3可變孔以與前述第2固定孔對向的方式而設;前述第1位置、前述第2位置及前述第3位置係可藉由前述第2噴射板之旋轉而變更的前 述第2噴射板的位置。 Further, the second injection plate is formed with a first variable hole disposed in a central region and an edge region of the second injection plate, and a second variable hole disposed in a central region of the second injection plate And a third variable hole disposed in an edge region of the second spray plate; wherein a central region of the second spray plate is opposite to a central region of the first spray plate; and an edge of the second spray plate The region is opposed to the edge region of the first spray plate; and when the second spray plate is at the first position, the first variable hole is opposed to the first fixing hole and the second fixing hole When the second injection plate is located at a second position different from the first position, the second variable hole is disposed to face the first fixing hole; and the second injection plate is located in the foregoing When the first position and the third position are different from each other, the third variable hole is provided to face the second fixing hole; the first position, the second position, and the third position are The front can be changed by the rotation of the second injection plate The position of the second spray plate will be described.
再者,一部分前述第1固定孔與一部分前述第2固定孔係於前述第1噴射板的半徑方向設成一列,一部分前述第1可變孔、一部分前述第2可變孔及一部分前述第3可變孔係於前述第2噴射板的半徑方向各自設成一列。 Further, a part of the first fixing hole and a part of the second fixing hole are formed in a row in a radial direction of the first injection plate, and a part of the first variable hole, a part of the second variable hole, and a part of the third The variable holes are provided in a row in the radial direction of the second injection plate.
根據另一實施形態,於前述第2噴射板形成有:第1可變孔,其配置於前述第2噴射板之中央區域及邊緣區域;及第2可變孔,其配置於前述第2噴射板之中央區域;且,前述第2噴射板之中央區域係與前述第1噴射板之中央區域對向;前述第2噴射板之邊緣區域係與前述第1噴射板之邊緣區域對向;當前述第1噴射板位於第1位置時,前述第1可變孔以與前述第1固定孔及前述第2固定孔對向的方式而設;當前述第2噴射板位於與前述第1位置不同的第2位置時,前述第2可變孔以與前述第1固定孔對向的方式而設;前述第1位置及前述第2位置係可藉由前述第2噴射板之旋轉而變更的前述第2噴射板的位置。 According to another embodiment, the second injection plate is formed with a first variable hole disposed in a central region and an edge region of the second injection plate, and a second variable hole disposed in the second injection hole a central region of the second spray plate; the central region of the second spray plate is opposite to a central region of the first spray plate; and an edge region of the second spray plate is opposite to an edge region of the first spray plate; When the first injection plate is at the first position, the first variable hole is provided to face the first fixing hole and the second fixing hole; and the second injection plate is located different from the first position In the second position, the second variable hole is provided to face the first fixing hole; the first position and the second position are changeable by the rotation of the second injection plate The position of the second spray plate.
再者,一部分前述第1固定孔與一部分前述第2固定孔係於前述第1噴射板的半徑方向設成一列,一部分前述第1可變孔及一部分前述第2可變孔係於前述第2噴射板的半徑方向各自設成一列。 Further, a part of the first fixing hole and a part of the second fixing hole are arranged in a row in a radial direction of the first injection plate, and a part of the first variable hole and a part of the second variable hole are in the second The radial directions of the spray plates are each set in a row.
根據又一實施形態,於前述第2噴射板形成有:第1可變孔,其配置於前述第2噴射板之中央區域及 邊緣區域;及第3可變孔,其配置於前述第2噴射板之邊緣區域;且,前述第2噴射板之中央區域係與前述第1噴射板之中央區域對向;前述第2噴射板之邊緣區域係與前述第1噴射板之邊緣區域對向;當前述第1噴射板位於第1位置時,前述第1可變孔以與前述第1固定孔及前述第2固定孔對向的方式而設;當前述第2噴射板位於與前述第1位置不同的第3位置時,前述第3可變孔以與前述第2固定孔對向的方式而設;前述第1位置及前述第3位置可藉由前述第2噴射板之旋轉而變更。 According to still another embodiment, the second injection plate is formed with a first variable hole that is disposed in a central region of the second injection plate and An edge region; and a third variable hole disposed in an edge region of the second injection plate; wherein a central region of the second injection plate faces a central region of the first injection plate; and the second injection plate The edge region faces the edge region of the first spray plate; and when the first spray plate is at the first position, the first variable hole faces the first fixing hole and the second fixing hole According to another aspect, when the second injection plate is located at a third position different from the first position, the third variable hole is provided to face the second fixing hole; the first position and the first The 3 position can be changed by the rotation of the second injection plate.
根據又一實施形態,於前述第1噴射板進而形成有第3固定孔,該第3固定孔配置於前述第1噴射板之中央區域與前述第1噴射板之邊緣區域之間的區域即中間區域;於前述第2噴射板進而形成有第4可變孔,該第4可變孔配置於前述第2噴射板之中央區域與前述第2噴射板之邊緣區域之間的區域即中間區域;前述第4可變孔係以當前述第2噴射板位於前述第2位置或前述第3位置時與前述第3固定孔對向的方式而設。 According to still another embodiment, a third fixing hole is further formed in the first injection plate, and the third fixing hole is disposed in a middle portion of a region between a central portion of the first injection plate and an edge region of the first injection plate. a fourth variable hole further formed in the second injection plate, wherein the fourth variable hole is disposed in a middle region which is a region between a central region of the second injection plate and an edge region of the second injection plate; The fourth variable hole is provided to face the third fixing hole when the second injection plate is positioned at the second position or the third position.
再者,一部分前述第1固定孔、一部分前述第2固定孔及一部分前述第3固定孔係於前述第1噴射板的半徑方向設成一列,一部分前述第1可變孔係於前述第2噴射板的半徑方向設成一列,一部分前述第4可變孔與一部分前述第2可變孔或一部分前述第3可變孔係於前述第2噴射板的半徑方向各自設成一列。 Further, a part of the first fixing hole, a part of the second fixing hole, and a part of the third fixing hole are formed in a row in a radial direction of the first injection plate, and a part of the first variable hole is in the second injection. The radial direction of the plates is set in a row, and a part of the fourth variable holes and a part of the second variable holes or a part of the third variable holes are arranged in a row in the radial direction of the second injection plate.
根據又一實施形態,前述第2噴射板具有配 置於前述第2噴射板之中央區域及邊緣區域的第1可變孔及第5可變孔;前述第2噴射板之中央區域係與前述第1噴射板之中央區域對向;前述第2噴射板之邊緣區域係與前述第1噴射板之邊緣區域對向;當前述第2噴射板位於第1位置時,前述第1可變孔以與前述第1固定孔及前述第2固定孔對向的方式而設;當前述第2噴射板位於與前述第1位置不同的第2位置時,前述第5可變孔以與前述第1固定孔及前述第2固定孔對向的方式而設;前述第1位置及前述第2位置係可藉由前述第2噴射板之旋轉而變更的前述第2噴射板的位置;前述第1可變孔及第5可變孔係以與前述第1固定孔及前述第2固定孔的大小相同、或小於前述第1固定孔及前述第2固定孔的大小的方式而設;配置於前述第2噴射板之中央區域的前述第5可變孔、與配置於前述第2噴射板之邊緣區域的第5可變孔係形成為大小彼此不同。 According to still another embodiment, the second injection plate has a configuration a first variable hole and a fifth variable hole that are disposed in a central region and an edge region of the second spray plate; a central region of the second spray plate is opposed to a central region of the first spray plate; and the second portion An edge region of the spray plate is opposite to an edge region of the first spray plate; and when the second spray plate is at the first position, the first variable hole is opposite to the first fixed hole and the second fixed hole In the second position, when the second injection plate is located at a second position different from the first position, the fifth variable hole is provided to face the first fixing hole and the second fixing hole. The first position and the second position are positions of the second injection plate that can be changed by the rotation of the second injection plate; and the first variable hole and the fifth variable hole are the first The fixing hole and the second fixing hole are provided in the same size or smaller than the size of the first fixing hole and the second fixing hole, and the fifth variable hole is disposed in a central region of the second injection plate. The fifth variable hole system disposed in the edge region of the second injection plate is formed in a size This different.
再者,一部分前述第1固定孔與一部分前述第2固定孔係於前述第1噴射板的半徑方向設成一列,一部分前述第1可變孔及一部分前述第5可變孔係於前述第2噴射板的半徑方向各自設成一列。 Further, a part of the first fixing hole and a part of the second fixing hole are arranged in a row in a radial direction of the first injection plate, and a part of the first variable hole and a part of the fifth variable hole are in the second The radial directions of the spray plates are each set in a row.
再者,本發明提供一種擋板組件。根據一實施形態,擋板組件具有彼此上下積層的第1噴射板及第2噴射板、及用於使前述第2噴射板以其中心為軸旋轉的驅動單元,且該擋板組件係以可藉由前述第2噴射板之旋轉角度而按基板的區域來調節電漿或氣體的噴射量的方式而 設。 Furthermore, the present invention provides a baffle assembly. According to one embodiment, the baffle assembly has a first spray plate and a second spray plate that are stacked one on another, and a drive unit for rotating the second spray plate about its center, and the baffle assembly is The manner in which the amount of plasma or gas is injected is adjusted in accordance with the area of the substrate by the rotation angle of the second ejection plate. Assume.
再者,於前述第1噴射板之中央區域形成有於上下方向貫穿之第1固定孔,於前述第1噴射板之邊緣區域形成有於上下方向貫穿之第2固定孔。 Further, a first fixing hole penetrating in the vertical direction is formed in a central portion of the first ejection plate, and a second fixing hole penetrating in the vertical direction is formed in an edge region of the first ejection plate.
再者,於前述第2噴射板形成有:第1可變孔,其配置於前述第2噴射板之中央區域及邊緣區域;第2可變孔,其配置於前述第2噴射板之中央區域;及第3可變孔,其配置於前述第2噴射板之邊緣區域;且,前述第2噴射板之中央區域係與前述第1噴射板之中央區域對向;前述第2噴射板之邊緣區域係與前述第1噴射板之邊緣區域對向;當前述第2噴射板位於第1位置時,前述第1可變孔以與前述第1固定孔及前述第2固定孔對向的方式而設;當前述第2噴射板位於與前述第1位置不同的第2位置時,前述第2可變孔以與前述第1固定孔對向的方式而設;當前述第2噴射板位於與前述第1位置及前述第2位置不同的第3位置時,前述第3可變孔以與前述第2固定孔對向的方式而設;前述第1位置、前述第2位置及前述第3位置係可藉由前述第2噴射板之旋轉而變更的前述第2噴射板的位置。 Further, the second injection plate is formed with a first variable hole disposed in a central region and an edge region of the second injection plate, and a second variable hole disposed in a central region of the second injection plate And a third variable hole disposed in an edge region of the second spray plate; wherein a central region of the second spray plate is opposite to a central region of the first spray plate; and an edge of the second spray plate The region is opposed to the edge region of the first spray plate; and when the second spray plate is at the first position, the first variable hole is opposed to the first fixing hole and the second fixing hole When the second injection plate is located at a second position different from the first position, the second variable hole is disposed to face the first fixing hole; and the second injection plate is located in the foregoing When the first position and the third position are different from each other, the third variable hole is provided to face the second fixing hole; the first position, the second position, and the third position are The position of the second injection plate that can be changed by the rotation of the second injection plate.
根據另一實施形態,於前述第2噴射板形成有:第1可變孔,其配置於前述第2噴射板之中央區域及邊緣區域;及第2可變孔,其配置於前述第2噴射板之中央區域;且,前述第2噴射板之中央區域係與前述第1噴射板之中央區域對向;前述第2噴射板之邊緣區域係與前 述第1噴射板之邊緣區域對向;當前述第1噴射板位於第1位置時,前述第1可變孔以與前述第1固定孔及前述第2固定孔對向的方式而設;當前述第2噴射板位於與前述第1位置不同的第2位置時,前述第2可變孔以與前述第1固定孔對向的方式而設;前述第1位置及前述第2位置係可藉由前述第2噴射板之旋轉而變更的前述第2噴射板的位置。 According to another embodiment, the second injection plate is formed with a first variable hole disposed in a central region and an edge region of the second injection plate, and a second variable hole disposed in the second injection hole a central region of the second injection plate; the central region of the second injection plate is opposite to the central region of the first injection plate; and the edge region of the second injection plate is When the first injection plate is located at the first position, the first variable hole is disposed to face the first fixing hole and the second fixing hole; When the second injection plate is located at a second position different from the first position, the second variable hole is provided to face the first fixing hole; the first position and the second position are The position of the second injection plate that is changed by the rotation of the second injection plate.
根據又一實施形態,於前述第2噴射板形成有:第1可變孔,其配置於前述第2噴射板之中央區域及邊緣區域;及第3可變孔,其配置於前述第2噴射板之邊緣區域;且,前述第2噴射板之中央區域係與前述第1噴射板之中央區域對向;前述第2噴射板之邊緣區域係與前述第1噴射板之邊緣區域對向;當前述第1噴射板位於第1位置時,前述第1可變孔以與前述第1固定孔及前述第2固定孔對向的方式而設;當前述第2噴射板位於與前述第1位置不同的第3位置時,前述第3可變孔以與前述第2固定孔對向的方式而設;前述第1位置及前述第3位置係可藉由前述第2噴射板之旋轉而變更的前述第2噴射板的位置。 According to still another aspect of the invention, the second injection plate is formed with a first variable hole disposed in a central region and an edge region of the second injection plate, and a third variable hole disposed in the second injection hole An edge region of the plate; the central region of the second spray plate is opposite to a central region of the first spray plate; and an edge region of the second spray plate is opposite to an edge region of the first spray plate; When the first injection plate is at the first position, the first variable hole is provided to face the first fixing hole and the second fixing hole; and the second injection plate is located different from the first position In the third position, the third variable hole is provided to face the second fixing hole; the first position and the third position are changeable by the rotation of the second injection plate The position of the second spray plate.
根據又一實施形態,於前述第1噴射板進而形成有第3固定孔,該第3固定孔配置於前述第1噴射板之中央區域與前述第1噴射板之邊緣區域之間的區域;於前述第2噴射板進而形成有第4固定孔,該第4固定孔配置於前述第2噴射板之中央區域與前述第2噴射板之邊緣 區域之間的區域;前述第4固定孔係以當前述第2噴射板位於前述第2位置或前述第3位置時與前述第3固定孔對向的方式而設。 According to still another embodiment, a third fixing hole is further formed in the first injection plate, and the third fixing hole is disposed in a region between a central region of the first injection plate and an edge region of the first injection plate; Further, the second injection plate is further formed with a fourth fixing hole which is disposed at a central portion of the second injection plate and an edge of the second injection plate The region between the regions; the fourth fixing hole is provided to face the third fixing hole when the second injection plate is located at the second position or the third position.
根據又一實施形態,前述第2噴射板具有配置於前述第2噴射板之中央區域及邊緣區域的第1可變孔及第5可變孔;前述第2噴射板之中央區域係與前述第1噴射板之中央區域對向;前述第2噴射板之邊緣區域係與前述第1噴射板之邊緣區域對向;當前述第2噴射板位於第1位置時,前述第1可變孔以與前述第1固定孔及前述第2固定孔對向的方式而設;當前述第2噴射板位於與前述第1位置不同的第2位置時,前述第5可變孔以與前述第1固定孔及前述第2固定孔對向的方式而設;前述第1位置及前述第2位置係可藉由前述第2噴射板之旋轉而變更的前述第2噴射板的位置;前述第1可變孔係以與前述第1固定孔及前述第2固定孔的大小相同、或小於前述第1固定孔及前述第2固定孔的大小的方式而設;配置於前述第2噴射板之中央區域的前述第5可變孔、與配置於前述第2噴射板之邊緣區域的第5可變孔係形成為大小彼此不同。 According to still another embodiment, the second injection plate has a first variable hole and a fifth variable hole that are disposed in a central region and an edge region of the second injection plate, and a central region of the second injection plate is a central portion of the spray plate is opposed to each other; an edge region of the second spray plate is opposite to an edge region of the first spray plate; and when the second spray plate is at the first position, the first variable hole is The first fixing hole and the second fixing hole are opposed to each other; and when the second injection plate is located at a second position different from the first position, the fifth variable hole and the first fixing hole And the second fixing hole is opposed to each other; the first position and the second position are positions of the second injection plate that can be changed by rotation of the second injection plate; and the first variable hole The first fixing hole and the second fixing hole are the same size as or smaller than the size of the first fixing hole and the second fixing hole, and are disposed in the central region of the second ejection plate. a fifth variable hole and an edge region disposed on the second spray plate The fifth variable pore system of the domain is formed to be different in size from each other.
本發明之實施形態之基板處理設備及擋板組件,能於基板處理製程時按氣體噴射板的區域來調節氣體或電漿噴射量。 The substrate processing apparatus and the shutter assembly according to the embodiment of the present invention can adjust the gas or plasma injection amount in accordance with the region of the gas injection plate during the substrate processing process.
而且,本發明之實施形態之基板處理設備及 擋板組件,能於基板處理製程時調節氣體噴射板的全體區域的氣體或電漿噴射量。 Moreover, the substrate processing apparatus of the embodiment of the present invention The baffle assembly is capable of adjusting the amount of gas or plasma sprayed throughout the entire area of the gas injection plate during the substrate processing process.
1、2‧‧‧基板處理設備 1, 2‧‧‧ substrate processing equipment
10‧‧‧基板 10‧‧‧Substrate
11‧‧‧體供給單元 11‧‧‧ body supply unit
12‧‧‧程腔室 12‧‧‧Centre chamber
13‧‧‧電漿源 13‧‧‧ Plasma source
14‧‧‧板 14‧‧‧ board
15‧‧‧板 15‧‧‧ board
16‧‧‧程處理室 16‧‧ ‧Processing Room
100‧‧‧製程腔室 100‧‧‧Processing chamber
120‧‧‧處理室 120‧‧‧Processing room
122‧‧‧排氣孔 122‧‧‧ venting holes
123‧‧‧接地線 123‧‧‧ Grounding wire
124‧‧‧排氣線 124‧‧‧Exhaust line
126‧‧‧泵 126‧‧‧ pump
140‧‧‧電漿產生室 140‧‧‧The plasma generation room
142‧‧‧放電室 142‧‧‧Discharge room
144‧‧‧擴散室 144‧‧‧Diffuse room
200‧‧‧基板支撐單元 200‧‧‧Substrate support unit
220‧‧‧支撐板 220‧‧‧support board
240‧‧‧支撐軸 240‧‧‧Support shaft
300‧‧‧氣體供給單元 300‧‧‧ gas supply unit
320‧‧‧氣體供給線 320‧‧‧ gas supply line
340‧‧‧氣體儲存部 340‧‧‧ Gas Storage Department
360‧‧‧氣體埠 360‧‧‧ gas 埠
400‧‧‧電漿源 400‧‧‧ Plasma source
420‧‧‧天線 420‧‧‧Antenna
440‧‧‧電源 440‧‧‧Power supply
500‧‧‧擋板組件 500‧‧‧Baffle assembly
520‧‧‧第1噴射板 520‧‧‧1st spray plate
520a‧‧‧上表面 520a‧‧‧ upper surface
520b‧‧‧下表面 520b‧‧‧ lower surface
520c‧‧‧側面 520c‧‧‧ side
520d‧‧‧開口 520d‧‧‧ openings
522‧‧‧第1固定孔 522‧‧‧1st fixing hole
524‧‧‧第2固定孔 524‧‧‧2nd fixing hole
526‧‧‧第3固定孔 526‧‧‧3rd fixing hole
528、548、548a、548b、 528, 548, 548a, 548b,
548c、548d、548e‧‧‧列 548c, 548d, 548e‧‧‧
540‧‧‧第2噴射板 540‧‧‧2nd spray plate
541‧‧‧第1可變孔 541‧‧‧1st variable hole
542‧‧‧第2可變孔 542‧‧‧2nd variable hole
543‧‧‧第3可變孔 543‧‧‧3rd variable hole
544‧‧‧第4可變孔 544‧‧‧4th variable hole
545‧‧‧第5可變孔 545‧‧‧5th variable hole
560‧‧‧驅動單元 560‧‧‧ drive unit
562‧‧‧驅動齒輪 562‧‧‧ drive gear
562a‧‧‧驅動板 562a‧‧‧Drive board
564‧‧‧連結構件 564‧‧‧Connected components
566‧‧‧馬達 566‧‧‧Motor
s11、s21‧‧‧中央區域 S11, s21‧‧‧ central area
s12、s22‧‧‧邊緣區域 S12, s22‧‧‧ edge area
s13、s23‧‧‧中間區域 S13, s23‧‧‧ intermediate area
圖1係表示普通基板處理設備之剖面圖。 Figure 1 is a cross-sectional view showing a conventional substrate processing apparatus.
圖2係表示本發明之一實施形態之基板處理設備之剖面圖。 Fig. 2 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
圖3係表示圖2之驅動單元及第2噴射板的一部分的立體圖。 Fig. 3 is a perspective view showing a part of the drive unit and the second injection plate of Fig. 2;
圖4係表示圖2之第1噴射板的俯視圖。 Fig. 4 is a plan view showing the first spray plate of Fig. 2;
圖5係表示圖2之第2噴射板的俯視圖。 Fig. 5 is a plan view showing the second spray plate of Fig. 2;
圖6係表示藉由圖5之第2噴射板之旋轉而使圖4之第1固定孔及第2固定孔開閉的形態的俯視圖。 Fig. 6 is a plan view showing a state in which the first fixing hole and the second fixing hole of Fig. 4 are opened and closed by the rotation of the second ejection plate of Fig. 5;
圖7係表示藉由圖5之第2噴射板之旋轉而使圖4之第1固定孔及第2固定孔開閉的形態的俯視圖。 Fig. 7 is a plan view showing a state in which the first fixing hole and the second fixing hole of Fig. 4 are opened and closed by the rotation of the second ejection plate of Fig. 5;
圖8係表示藉由圖5之第2噴射板之旋轉而使圖4之第1固定孔及第2固定孔開閉的形態的俯視圖。 Fig. 8 is a plan view showing a state in which the first fixing hole and the second fixing hole of Fig. 4 are opened and closed by the rotation of the second ejection plate of Fig. 5;
圖9係表示圖2之第2噴射板的另一實施形態的俯視圖。 Fig. 9 is a plan view showing another embodiment of the second injection plate of Fig. 2;
圖10係表示藉由圖9之第2噴射板之旋轉而使圖4之第1固定孔及第2固定孔開閉的形態的俯視圖。 Fig. 10 is a plan view showing a state in which the first fixing hole and the second fixing hole of Fig. 4 are opened and closed by the rotation of the second ejection plate of Fig. 9;
圖11係表示藉由圖9之第2噴射板之旋轉而使圖4之第1固定孔及第2固定孔開閉的形態的俯視圖。 Fig. 11 is a plan view showing a state in which the first fixing hole and the second fixing hole of Fig. 4 are opened and closed by the rotation of the second injection plate of Fig. 9;
圖12係表示圖2之第2噴射板之又一實施形態的俯視 圖。 Figure 12 is a plan view showing still another embodiment of the second spray plate of Figure 2; Figure.
圖13係表示藉由圖12之第2噴射板之旋轉而使圖4之第1固定孔及第2固定孔開閉的形態的俯視圖。 Fig. 13 is a plan view showing a state in which the first fixing hole and the second fixing hole of Fig. 4 are opened and closed by the rotation of the second ejection plate of Fig. 12;
圖14係表示藉由圖12之第2噴射板之旋轉而使圖4之第1固定孔及第2固定孔開閉的形態的俯視圖。 Fig. 14 is a plan view showing a state in which the first fixing hole and the second fixing hole of Fig. 4 are opened and closed by the rotation of the second ejection plate of Fig. 12;
圖15係表示圖2之第2噴射板之又一實施形態的俯視圖。 Fig. 15 is a plan view showing still another embodiment of the second spray plate of Fig. 2;
圖16係表示藉由圖15之第2噴射板之旋轉而調節圖4之第1固定孔及第2固定孔之噴射率的形態的俯視圖。 Fig. 16 is a plan view showing an embodiment in which the injection rates of the first fixing holes and the second fixing holes of Fig. 4 are adjusted by the rotation of the second injection plate of Fig. 15;
圖17係表示藉由圖15之第2噴射板之旋轉而調節圖4之第1固定孔及第2固定孔之噴射率的形態的俯視圖。 Fig. 17 is a plan view showing an aspect in which the injection rates of the first fixing holes and the second fixing holes of Fig. 4 are adjusted by the rotation of the second injection plate of Fig. 15;
圖18係表示進而包含第3固定孔之圖2之第1噴射板的俯視圖。 Fig. 18 is a plan view showing the first spray plate of Fig. 2 further including a third fixing hole.
圖19係表示圖2之第2噴射板之又一實施形態的俯視圖。 Fig. 19 is a plan view showing still another embodiment of the second spray plate of Fig. 2;
圖20係表示藉由圖19之第2噴射板之旋轉而使圖18之第1至第3固定孔開閉的形態的俯視圖。 FIG. 20 is a plan view showing a state in which the first to third fixing holes of FIG. 18 are opened and closed by the rotation of the second injection plate of FIG. 19 .
圖21係表示藉由圖19之第2噴射板之旋轉而使圖18之第1至第3固定孔開閉的形態的俯視圖。 Fig. 21 is a plan view showing a state in which the first to third fixing holes of Fig. 18 are opened and closed by the rotation of the second injection plate of Fig. 19 .
圖22係表示藉由圖19之第2噴射板之旋轉而使圖18之第1至第3固定孔開閉的形態的俯視圖。 Fig. 22 is a plan view showing a state in which the first to third fixing holes of Fig. 18 are opened and closed by the rotation of the second injection plate of Fig. 19;
圖23係表示又一實施形態中、圖2之驅動單元及第2噴射板的一部分的立體圖。 Fig. 23 is a perspective view showing a part of the drive unit and the second injection plate of Fig. 2 in still another embodiment.
圖24係表示將第1噴射板內部設有第2噴射板之擋板 組件的一部分切斷後的立體圖。 Figure 24 is a view showing a baffle plate in which a second spray plate is provided inside the first spray plate. A perspective view of a part of the component that has been cut.
圖25係表示第2噴射板結合於第1噴射板之下端的基板處理設備的剖面圖。 Figure 25 is a cross-sectional view showing the substrate processing apparatus in which the second ejection plate is coupled to the lower end of the first ejection plate.
以下,參照隨附的圖式對本發明之實施形態進行更詳細的說明。本發明之實施形態可變形為各種形態,且不能解釋為本發明之範圍限定為以下實施形態。本實施形態係為了進一步完整地說明本發明而提供給業界具有平均知識的人員。因此,圖式中要素的形狀係誇張地表示,以強調更明確的說明。 Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention can be modified into various forms, and the scope of the present invention is not limited to the following embodiments. This embodiment is intended to provide a person with an average knowledge in the industry in order to fully explain the present invention. Therefore, the shapes of the elements in the drawings are exaggerated to emphasize a more explicit description.
本發明之實施形態中,基板10為半導體晶圓。然而,並不限於此,基板10亦可為玻璃基板等其他類型的基板。 In an embodiment of the invention, the substrate 10 is a semiconductor wafer. However, the present invention is not limited thereto, and the substrate 10 may be another type of substrate such as a glass substrate.
而且,本發明之實施形態中,基板處理設備係利用電漿或氣體而進行灰化、蒸鍍、或蝕刻等製程的設備。 Further, in the embodiment of the present invention, the substrate processing apparatus is a device that performs processes such as ashing, vapor deposition, or etching using plasma or gas.
以下,關於本發明之一實施形態之基板處理設備1進行說明。 Hereinafter, a substrate processing apparatus 1 according to an embodiment of the present invention will be described.
圖2係表示本發明之一實施形態之基板處理設備1的剖面圖。參考圖2,基板處理設備1具有製程腔室100、基板支撐單元200、氣體供給單元300、電漿源400及擋板組件500。 Fig. 2 is a cross-sectional view showing a substrate processing apparatus 1 according to an embodiment of the present invention. Referring to FIG. 2, the substrate processing apparatus 1 has a process chamber 100, a substrate supporting unit 200, a gas supply unit 300, a plasma source 400, and a shutter assembly 500.
製程腔室100具有處理室120與電漿產生室140。處理室120提供空間供利用電漿對基板10進行處理。 電漿產生室140提供空間供由製程氣體產生電漿。 The process chamber 100 has a process chamber 120 and a plasma generation chamber 140. The processing chamber 120 provides space for processing the substrate 10 with plasma. The plasma generation chamber 140 provides space for plasma to be produced by the process gas.
處理室120之內部具有上部開放的空間。處理室120大致呈圓筒形狀。於處理室120之側壁形成有基板流入口(未圖示)。基板10通過基板流入口而進出於處理室120的內部。基板流入口(未圖示)藉由門(未圖示)等開閉構件而開閉。於處理室120之底面形成有排氣孔122。排氣線124連結於排氣孔122。於排氣線124上設置有泵126。泵126係將處理室120內的壓力調節為製程壓力。處理室120內之殘留氣體及反應副產物通過排氣線124而向處理室120的外部排出。 The interior of the processing chamber 120 has an upper open space. The processing chamber 120 has a substantially cylindrical shape. A substrate inflow port (not shown) is formed in a side wall of the processing chamber 120. The substrate 10 enters the inside of the processing chamber 120 through the substrate inflow port. The substrate inflow port (not shown) is opened and closed by an opening and closing member such as a door (not shown). A vent hole 122 is formed in a bottom surface of the processing chamber 120. The exhaust line 124 is coupled to the exhaust hole 122. A pump 126 is disposed on the exhaust line 124. Pump 126 regulates the pressure within process chamber 120 to process pressure. The residual gas and reaction by-products in the processing chamber 120 are discharged to the outside of the processing chamber 120 through the exhaust line 124.
電漿產生室140位於處理室120的外部。作為一例,電漿產生室140位於處理室120的上部,且與處理室120結合。電漿產生室140具有放電室142與擴散室144。放電室142與擴散室144係於上下方向依序設置。放電室142具有中空的圓筒狀。自上部觀察時,放電室142內的空間較處理室120內的空間狹窄。於放電室142內,由氣體產生電漿。擴散室144內的空間具有越靠近下方越逐漸擴大的部分。擴散室144的下端與處理室120的上端結合,且其間設有用於與外部保持密閉的密封構件(未圖示)。 The plasma generating chamber 140 is located outside of the processing chamber 120. As an example, the plasma generation chamber 140 is located at an upper portion of the processing chamber 120 and is coupled to the processing chamber 120. The plasma generation chamber 140 has a discharge chamber 142 and a diffusion chamber 144. The discharge chamber 142 and the diffusion chamber 144 are sequentially disposed in the vertical direction. The discharge chamber 142 has a hollow cylindrical shape. The space in the discharge chamber 142 is narrower than the space in the processing chamber 120 when viewed from the upper portion. In the discharge chamber 142, plasma is generated from the gas. The space in the diffusion chamber 144 has a portion that gradually increases as it goes closer to the lower side. The lower end of the diffusion chamber 144 is coupled to the upper end of the processing chamber 120, and a sealing member (not shown) for sealing the outside is provided therebetween.
製程腔室100係由導電性材質形成。製程腔室100係通過接地線123而接地。 The process chamber 100 is formed of a conductive material. The process chamber 100 is grounded through a ground line 123.
基板支撐單元200支撐基板10。基板支撐單元200具有支撐板220與支撐軸240。 The substrate supporting unit 200 supports the substrate 10. The substrate supporting unit 200 has a support plate 220 and a support shaft 240.
支撐板220位於處理室120內,且呈圓板狀。支撐板220由支撐軸240支撐。基板10係置於支撐板220的上表面。於支撐板220的內部設有電極(未圖示),基板10係藉由靜電力或機械式夾具而支撐於支撐板220。 The support plate 220 is located in the processing chamber 120 and has a disk shape. The support plate 220 is supported by the support shaft 240. The substrate 10 is placed on the upper surface of the support plate 220. Electrodes (not shown) are provided inside the support plate 220, and the substrate 10 is supported by the support plate 220 by electrostatic force or a mechanical clamp.
氣體供給單元300設於放電室142的上部。設有1個或多個氣體供給單元300。氣體供給單元300具有氣體供給線320、氣體儲存部340及氣體埠(gas port)360。 The gas supply unit 300 is provided at an upper portion of the discharge chamber 142. One or more gas supply units 300 are provided. The gas supply unit 300 has a gas supply line 320, a gas storage unit 340, and a gas port 360.
氣體供給線320連結於氣體埠360。氣體埠360結合於放電室142的上部。通過氣體埠360而供給之氣體係流入至放電室142且於放電室142內被激發成電漿。 The gas supply line 320 is coupled to the gas crucible 360. The gas crucible 360 is coupled to the upper portion of the discharge chamber 142. The gas system supplied through the gas crucible 360 flows into the discharge chamber 142 and is excited into a plasma in the discharge chamber 142.
電漿源400係使放電室142內由自氣體供給單元300所供給的氣體產生電漿。作為一例,電漿源400亦可為電感耦合型電漿源。電漿源400具有天線420與電源440。 The plasma source 400 generates plasma in the discharge chamber 142 from the gas supplied from the gas supply unit 300. As an example, the plasma source 400 can also be an inductively coupled plasma source. The plasma source 400 has an antenna 420 and a power source 440.
天線420設於放電室142的外部,且以圍繞放電室142的側面多圈的方式設置。天線420之一端連結於電源440、另一端接地。 The antenna 420 is provided outside the discharge chamber 142 and is disposed in a plurality of turns around the side of the discharge chamber 142. One end of the antenna 420 is connected to the power source 440 and the other end is grounded.
電源440向天線420施加電力。作為一例,電源440向天線420施加高頻電力。 Power source 440 applies power to antenna 420. As an example, the power source 440 applies high frequency power to the antenna 420.
擋板組件500具有第1噴射板520、第2噴射板540及驅動單元560。擋板組件500設於處理室120的上端。自氣體供給單元300供給之氣體或由電漿源400產生之電漿係藉由擋板組件500而噴射至基板支撐單元200的上部。擋板組件500能按第1噴射板520或第2噴射板 540之底面的區域來調節氣體或電漿噴射量。擋板組件500接地。擋板組件500係以與製程腔室100接觸之方式設置,從而通過製程腔室100而接地。第2噴射板540及第1噴射板520係於上下方向依序設置。 The shutter assembly 500 includes a first injection plate 520, a second injection plate 540, and a drive unit 560. The shutter assembly 500 is disposed at an upper end of the processing chamber 120. The gas supplied from the gas supply unit 300 or the plasma generated by the plasma source 400 is ejected to the upper portion of the substrate supporting unit 200 by the shutter assembly 500. The baffle assembly 500 can press the first spray plate 520 or the second spray plate The area of the bottom surface of 540 adjusts the amount of gas or plasma injection. The baffle assembly 500 is grounded. The baffle assembly 500 is disposed in contact with the process chamber 100 to be grounded through the process chamber 100. The second injection plate 540 and the first injection plate 520 are sequentially disposed in the vertical direction.
驅動單元560係以使第2噴射板540以其中心為軸旋轉的方式而設置。驅動單元560係以於擴散室144的上表面之邊緣區域內貫穿擴散室144之上表面的方式設置。驅動單元560具有驅動齒輪562、連結構件564及馬達566。 The drive unit 560 is provided to rotate the second injection plate 540 about its center. The driving unit 560 is disposed to penetrate the upper surface of the diffusion chamber 144 in the edge region of the upper surface of the diffusion chamber 144. The drive unit 560 has a drive gear 562, a coupling member 564, and a motor 566.
驅動齒輪562係將由連結構件564傳遞之驅動力傳遞至第2噴射板540。圖3係用於說明圖2之驅動齒輪562之、表示驅動齒輪562及第2噴射板540的一部分的立體圖。參考圖3,驅動齒輪562係以與設於第2噴射板540之側面的齒輪嚙合的方式而設。驅動齒輪562係呈圓板形態,且於其側面形成有齒輪。於驅動齒輪562之上表面的中心連結有連結構件564。 The drive gear 562 transmits the driving force transmitted by the coupling member 564 to the second injection plate 540. FIG. 3 is a perspective view showing a part of the drive gear 562 and the second injection plate 540 of the drive gear 562 of FIG. 2 . Referring to Fig. 3, drive gear 562 is provided to mesh with a gear provided on a side surface of second spray plate 540. The drive gear 562 is in the form of a circular plate, and a gear is formed on the side thereof. A coupling member 564 is coupled to the center of the upper surface of the drive gear 562.
連結構件564將由馬達566產生之驅動力傳遞至驅動齒輪562。再次參照圖2,連結構件564係以貫穿擴散室144之上表面的方式而設。於連結構件564的上端,連結有馬達566。 The coupling member 564 transmits the driving force generated by the motor 566 to the driving gear 562. Referring again to FIG. 2, the coupling member 564 is provided to penetrate the upper surface of the diffusion chamber 144. A motor 566 is coupled to the upper end of the coupling member 564.
馬達566產生用於使第2噴射板540旋轉之驅動力。馬達566設於擴散室144上表面的邊緣部分。 The motor 566 generates a driving force for rotating the second injection plate 540. The motor 566 is provided at an edge portion of the upper surface of the diffusion chamber 144.
根據一實施形態,第1噴射板520係以固定於處理室120之上端的方式而設。第1噴射板520的直徑 大於處理室120上端之內側直徑。 According to one embodiment, the first injection plate 520 is provided to be fixed to the upper end of the processing chamber 120. The diameter of the first spray plate 520 It is larger than the inner diameter of the upper end of the processing chamber 120.
圖4係自上部觀察第1噴射板520的圖式。參照圖4,第1噴射板520呈圓板狀。於第1噴射板520,形成有第1固定孔522及第2固定孔524。第1固定孔522及第2固定孔524係以於上下方向貫穿第1噴射板520的方式形成。就第1固定孔522及第2固定孔524而言,當自上部觀察時具有大致圓形狀,且形成為彼此相同的大小。第1固定孔522及第2固定孔524各自設有多個。 Fig. 4 is a view of the first spray plate 520 as seen from the upper portion. Referring to Fig. 4, the first spray plate 520 has a disk shape. The first injection hole 522 and the second fixing hole 524 are formed in the first injection plate 520. The first fixing hole 522 and the second fixing hole 524 are formed to penetrate the first injection plate 520 in the vertical direction. The first fixing hole 522 and the second fixing hole 524 have a substantially circular shape when viewed from the upper portion, and are formed to have the same size. A plurality of the first fixing holes 522 and the second fixing holes 524 are provided.
第1固定孔522形成於第1噴射板520之中央區域s11。第2固定孔524形成於第1噴射板520之邊緣區域s12。一部分第1固定孔s11與一部分第2固定孔s12係於第1噴射板520之半徑方向設成一列。排列有一部分第1固定孔s11及一部分第2固定孔s12的列528係設有多個。各個列528係以將第1噴射板520之中心作為基準而彼此成一定角度的方式排列。 The first fixing hole 522 is formed in the central region s11 of the first injection plate 520. The second fixing hole 524 is formed in the edge region s12 of the first injection plate 520. A part of the first fixing holes s11 and a part of the second fixing holes s12 are arranged in a row in the radial direction of the first injection plate 520. A plurality of rows 528 in which a part of the first fixing holes s11 and a part of the second fixing holes s12 are arranged are provided in plurality. Each of the rows 528 is arranged at a predetermined angle to each other with the center of the first injection plate 520 as a reference.
圖5係自上部觀察第2噴射板540的圖式。參照圖5,第2噴射板540呈圓板狀,且於其側面設有齒輪。於第2噴射板540,形成有第1可變孔541、第2可變孔542及第3可變孔543。第1可變孔541、第2可變孔542及第3可變孔543係以於上下方向貫穿第2噴射板540的方式形成。就第1可變孔541、第2可變孔542及第3可變孔543而言,當自上部觀察時,各自具有大致圓形狀,且形成為彼此相同的大小。第1可變孔541、第2可變孔542及第3可變孔543之大小與第1固定孔522及第2固 定孔524之大小相同、或小於第1固定孔522及第2固定孔524之大小。第1可變孔541、第2可變孔542及第3可變孔543各自設有多個。一部分第1可變孔541、一部分第2可變孔542及一部分第3可變孔543係於第2噴射板540之半徑方向各自排列成一列。分別排列有一部分第1可變孔541、一部分第2可變孔542、及一部分第3可變孔543的列548各自設有多個。由一部分第1可變孔541、一部分第2可變孔542、或一部分第3可變孔543各自構成的各個列548係以將第2噴射板540之中心作為基準而各自成一定角度的方式排列。 Fig. 5 is a view of the second spray plate 540 as seen from the upper portion. Referring to Fig. 5, the second injection plate 540 has a disk shape and is provided with gears on its side surface. In the second injection plate 540, a first variable hole 541, a second variable hole 542, and a third variable hole 543 are formed. The first variable hole 541, the second variable hole 542, and the third variable hole 543 are formed so as to penetrate the second injection plate 540 in the vertical direction. The first variable hole 541, the second variable hole 542, and the third variable hole 543 each have a substantially circular shape when viewed from the upper portion, and are formed to have the same size. The size of the first variable hole 541, the second variable hole 542, and the third variable hole 543 is the same as the first fixing hole 522 and the second solid The fixed holes 524 have the same size or smaller than the sizes of the first fixing holes 522 and the second fixing holes 524. A plurality of the first variable hole 541, the second variable hole 542, and the third variable hole 543 are provided. A part of the first variable hole 541, a part of the second variable hole 542, and a part of the third variable hole 543 are arranged in a line in the radial direction of the second injection plate 540. A plurality of columns 548 in which a part of the first variable hole 541, a part of the second variable hole 542, and a part of the third variable hole 543 are arranged are provided. Each of the rows 548 including the first variable orifice 541, the partial second variable orifice 542, or a part of the third variable orifice 543 is formed at a predetermined angle with respect to the center of the second injection plate 540. arrangement.
第1可變孔541形成於第2噴射板540之中央區域s21及邊緣區域s22。 The first variable hole 541 is formed in the central region s21 and the edge region s22 of the second injection plate 540.
第2可變孔542形成於第2噴射板540之中央區域s21。排列有一部分第2可變孔542的各列548b係以將第2噴射板540之中心作為基準而與排列有一部分第1可變孔541的列548a成一定角度的方式排列。排列有一部分第2可變孔542的列548b與排列有一部分第1可變孔541的列548a所成的角度的大小係小於排列有一部分第1可變孔541的列548a之間的角度。 The second variable hole 542 is formed in the central region s21 of the second injection plate 540. Each of the rows 548b in which a part of the second variable holes 542 are arranged is arranged at a predetermined angle with respect to the row 548a in which a part of the first variable holes 541 are arranged with reference to the center of the second injection plate 540. The angle between the row 548b in which a part of the second variable holes 542 are arranged and the row 548a in which a part of the first variable holes 541 are arranged is smaller than the angle between the rows 548a in which a part of the first variable holes 541 are arranged.
第3可變孔543形成於第2噴射板540之邊緣區域s22。排列有一部分第3可變孔543的各列548c係以將第2噴射板540之中心作為基準而與排列有一部分第1可變孔541的列548a成一定角度的方式排列。排列有一部分第3可變孔543的列548c與排列有一部分第1可變孔 541的列548a所成之角度的大小係小於排列有一部分第1可變孔541的列548a之間的角度。 The third variable hole 543 is formed in the edge region s22 of the second injection plate 540. Each of the rows 548c in which a part of the third variable holes 543 are arranged is arranged at a predetermined angle with respect to the row 548a in which a part of the first variable holes 541 are arranged with reference to the center of the second injection plate 540. A column 548c in which a part of the third variable hole 543 is arranged and a part of the first variable hole are arranged The angle formed by the row 548a of 541 is smaller than the angle between the columns 548a in which a part of the first variable holes 541 are arranged.
排列有一部分第1可變孔541的列548a與排列有一部分第3可變孔543的列548c之間的角度係不同於排列有一部分第1可變孔541的列548a與排列有一部分第3可變孔543的列548c之間的角度。就排列有一部分第1可變孔541的列548a與排列有一部分第3可變孔543的列548c之間的角度、與排列有一部分第1可變孔541的列548a與排列有一部分第3可變孔543的列548c之間的角度而言,以排列有一部分第1可變孔541的列548a為基準,其大小相同但方向不同。 The angle between the column 548a in which a part of the first variable holes 541 are arranged and the column 548c in which a part of the third variable holes 543 are arranged is different from the column 548a in which a part of the first variable holes 541 are arranged, and a part of the third portion is arranged. The angle between the columns 548c of the variable apertures 543. The angle between the row 548a in which a part of the first variable hole 541 is arranged and the column 548c in which a part of the third variable hole 543 is arranged, and the column 548a in which a part of the first variable hole 541 is arranged are arranged and a part is arranged third. The angle between the rows 548c of the variable holes 543 is the same in the column 548a in which a part of the first variable holes 541 are arranged, and the directions are the same but different in direction.
再次參照圖2,第2噴射板540係以第1噴射板520之下表面與第2噴射板540的上表面鄰接的方式而設。第2噴射板540能以其中心為軸旋轉。 Referring to FIG. 2 again, the second injection plate 540 is provided such that the lower surface of the first injection plate 520 is adjacent to the upper surface of the second injection plate 540. The second spray plate 540 is rotatable about its center.
以下,對於藉由圖5之第2噴射板540之旋轉而使第1噴射板520之噴射孔開閉的形態進行說明。 Hereinafter, a mode in which the injection holes of the first injection plate 520 are opened and closed by the rotation of the second injection plate 540 of FIG. 5 will be described.
圖6至圖8係自上部觀察圖5之第1噴射板520及第2噴射板540於上下方向依序結合之形態的圖式。參照圖6至圖8,第2噴射板540之中央區域s21係與第1噴射板520之中央區域s11對向,第2噴射板540之邊緣區域s22係與第1噴射板520之邊緣區域s12對向。 6 to 8 are views showing a state in which the first spray plate 520 and the second spray plate 540 of Fig. 5 are sequentially joined in the vertical direction from the upper side. 6 to 8, the central region s21 of the second injection plate 540 is opposed to the central region s11 of the first injection plate 520, and the edge region s22 of the second injection plate 540 is connected to the edge region s12 of the first injection plate 520. Opposite.
圖6係表示當第2噴射板540位於第1位置時、第1噴射板520之噴射孔開閉的形態的圖式。參照圖6,當第2噴射板540位於第1位置時,第1可變孔541 位於與第1固定孔522及第2固定孔524對向的位置。因此,第1固定孔521及第2固定孔522開放。 FIG. 6 is a view showing a state in which the injection holes of the first injection plate 520 are opened and closed when the second injection plate 540 is at the first position. Referring to Fig. 6, when the second injection plate 540 is at the first position, the first variable hole 541 It is located at a position facing the first fixing hole 522 and the second fixing hole 524. Therefore, the first fixing hole 521 and the second fixing hole 522 are opened.
圖7係表示當第2噴射板540位於第2位置時、第1噴射板520之噴射孔開閉的形態的圖式。參照圖7,第2位置係使第2噴射板540以第1位置為基準向右旋轉規定的角度後的位置。當第2噴射板540位於第2位置時,第2可變孔542位於與第1固定孔522對向的位置。因此,第1固定孔522開放,第2固定孔524關閉。 FIG. 7 is a view showing a mode in which the injection holes of the first injection plate 520 are opened and closed when the second injection plate 540 is at the second position. Referring to Fig. 7, the second position is a position at which the second injection plate 540 is rotated to the right by a predetermined angle with respect to the first position. When the second injection plate 540 is at the second position, the second variable hole 542 is located at a position facing the first fixing hole 522. Therefore, the first fixing hole 522 is opened, and the second fixing hole 524 is closed.
圖8係表示當第2噴射板540位於第3位置時、第1噴射板520之噴射孔開閉的形態的圖式。參照圖8,第3位置係使第2噴射板540以第1位置為基準逆時針旋轉規定的角度後的位置。當第2噴射板540位於第3位置時,第3可變孔543位於與第2固定孔524對向的位置。因此,第2固定孔524開放,第1固定孔522關閉。 FIG. 8 is a view showing a mode in which the injection holes of the first injection plate 520 are opened and closed when the second injection plate 540 is at the third position. Referring to Fig. 8, the third position is a position at which the second injection plate 540 is rotated counterclockwise by a predetermined angle with respect to the first position. When the second injection plate 540 is at the third position, the third variable hole 543 is located at a position opposed to the second fixing hole 524. Therefore, the second fixing hole 524 is opened, and the first fixing hole 522 is closed.
圖9係表示圖2之第2噴射板540之另一實施形態的圖式。參照圖9,第2噴射板540中,除可變孔之配置之外,其他構造、功能、形狀等均與圖5之第2噴射板540相同。於第2噴射板540形成有第1可變孔541及第2可變孔542。第1可變孔541及第2可變孔542各自設有多個。一部分第1可變孔541及一部分第2可變孔542係於第2噴射板540之半徑方向各自排列成一列。分別排列有一部分第1可變孔541及一部分第2可變孔542的列548各自有多個。由一部分第1可變孔541及一部分第2可變孔542各自構成的各個列548係以將第2噴射板 540之中心作為基準而各自成一定角度的方式排列。 Fig. 9 is a view showing another embodiment of the second spray plate 540 of Fig. 2; Referring to Fig. 9, in the second injection plate 540, other configurations, functions, shapes, and the like are the same as those of the second injection plate 540 of Fig. 5 except for the arrangement of the variable holes. The first variable hole 541 and the second variable hole 542 are formed in the second injection plate 540. A plurality of the first variable hole 541 and the second variable hole 542 are provided. A part of the first variable hole 541 and a part of the second variable hole 542 are arranged in a line in the radial direction of the second injection plate 540. A plurality of columns 548 each having a part of the first variable hole 541 and a part of the second variable hole 542 are arranged. Each of the rows 548 composed of a part of the first variable hole 541 and a part of the second variable hole 542 is used to connect the second spray plate. The centers of 540 are arranged at a certain angle as a reference.
第1可變孔541形成於第2噴射板540之中央區域s21及邊緣區域s22。 The first variable hole 541 is formed in the central region s21 and the edge region s22 of the second injection plate 540.
第2可變孔542形成於第2噴射板540之中央區域s21。排列有一部分第2可變孔542的各列548b係以將第2噴射板540之中心作為基準而與排列有一部分第1可變孔541的列548a成一定角度的方式排列。排列有一部分第2可變孔542的列548b與排列有一部分第1可變孔541的列548a所成的角度的大小係小於排列有一部分第1可變孔541的列548a之間的角度。 The second variable hole 542 is formed in the central region s21 of the second injection plate 540. Each of the rows 548b in which a part of the second variable holes 542 are arranged is arranged at a predetermined angle with respect to the row 548a in which a part of the first variable holes 541 are arranged with reference to the center of the second injection plate 540. The angle between the row 548b in which a part of the second variable holes 542 are arranged and the row 548a in which a part of the first variable holes 541 are arranged is smaller than the angle between the rows 548a in which a part of the first variable holes 541 are arranged.
以下,對於藉由圖9之第2噴射板540之旋轉而使第1噴射板520之噴射孔開閉的形態進行說明。 Hereinafter, a mode in which the injection holes of the first injection plate 520 are opened and closed by the rotation of the second injection plate 540 of FIG. 9 will be described.
圖10至圖11係自上部觀察第1噴射板520及圖9之第2噴射板540於上下方向依序結合的形態的圖式。 10 to 11 are views showing a state in which the first injection plate 520 and the second injection plate 540 of Fig. 9 are sequentially joined in the vertical direction from the upper side.
圖10係表示當第2噴射板540位於第1位置時、第1噴射板520之噴射孔開閉的形態的圖式。參照圖10,當第2噴射板540位於第1位置時,第1可變孔541位於與第1固定孔522及第2固定孔524對向的位置。因此,第1固定孔522及第2固定孔524開放。 FIG. 10 is a view showing a mode in which the injection holes of the first injection plate 520 are opened and closed when the second injection plate 540 is at the first position. Referring to Fig. 10, when the second injection plate 540 is at the first position, the first variable hole 541 is located at a position facing the first fixing hole 522 and the second fixing hole 524. Therefore, the first fixing hole 522 and the second fixing hole 524 are opened.
圖11係表示當第2噴射板540位於第2位置時、第1噴射板520之噴射孔開閉的形態的圖式。參照圖11,當第2噴射板540位於第2位置時,第2可變孔542位於與第1固定孔522對向的位置。因此,第1固定孔522 開放,第2固定孔524關閉。 FIG. 11 is a view showing a state in which the injection holes of the first injection plate 520 are opened and closed when the second injection plate 540 is at the second position. Referring to Fig. 11, when the second injection plate 540 is at the second position, the second variable hole 542 is located at a position facing the first fixing hole 522. Therefore, the first fixing hole 522 Open, the second fixing hole 524 is closed.
圖12係表示圖2之第2噴射板540之又一實施形態的圖式。參照圖12,第2噴射板540中,除可變孔之配置之外,其他構造、功能及形狀等均與圖5之第2噴射板540相同。於第2噴射板540形成有第1可變孔541及第3可變孔543。第1可變孔541及第3可變孔543各自設有多個。一部分第1可變孔541及一部分第2可變孔543係於第2噴射板540之半徑方向各自排列成一列。分別排列有一部分第1可變孔541及一部分第3可變孔543的列548各自設有多個。由一部分第1可變孔541及一部分第3可變孔543各自構成的各個列548係以將第2噴射板540之中心作為基準而各自成一定角度的方式排列。 Fig. 12 is a view showing still another embodiment of the second spray plate 540 of Fig. 2; Referring to Fig. 12, in the second injection plate 540, other structures, functions, shapes, and the like are the same as those of the second injection plate 540 of Fig. 5 except for the arrangement of the variable holes. The first variable hole 541 and the third variable hole 543 are formed in the second injection plate 540. A plurality of the first variable hole 541 and the third variable hole 543 are provided. A part of the first variable hole 541 and a part of the second variable hole 543 are arranged in a line in the radial direction of the second injection plate 540. A plurality of columns 548 in which a part of the first variable hole 541 and a part of the third variable hole 543 are arranged are provided in plurality. Each of the rows 548 including the first variable orifice 541 and the partial third variable orifice 543 are arranged at a predetermined angle with respect to the center of the second injection plate 540.
第1可變孔541形成於第2噴射板540之中央區域s21及邊緣區域s22。 The first variable hole 541 is formed in the central region s21 and the edge region s22 of the second injection plate 540.
第3可變孔543形成於第2噴射板540之邊緣區域s22。排列有一部分第3可變孔543的各列548c係以將第2噴射板540之中心作為基準而與排列有一部分第1可變孔541的列548a成一定角度的方式排列。排列有一部分第3可變孔543的列548c與排列有一部分第1可變孔541的列548a所成的角度的大小係小於排列有一部分第1可變孔541的列548a之間的角度。 The third variable hole 543 is formed in the edge region s22 of the second injection plate 540. Each of the rows 548c in which a part of the third variable holes 543 are arranged is arranged at a predetermined angle with respect to the row 548a in which a part of the first variable holes 541 are arranged with reference to the center of the second injection plate 540. The angle between the row 548c in which a part of the third variable holes 543 are arranged and the column 548a in which a part of the first variable holes 541 are arranged is smaller than the angle between the rows 548a in which a part of the first variable holes 541 are arranged.
以下,對於藉由圖12之第2噴射板540之旋轉而使第1噴射板520之噴射孔開閉的形態進行說明。 Hereinafter, a mode in which the injection holes of the first injection plate 520 are opened and closed by the rotation of the second injection plate 540 of FIG. 12 will be described.
圖13至圖14係表示自上部觀察第1噴射板 520及圖12之第2噴射板540於上下方向依序結合的形態的圖式。 13 to 14 are views showing the first spray plate viewed from the upper portion. 520 and the second spray plate 540 of FIG. 12 are sequentially connected in the vertical direction.
圖13係表示當第2噴射板540位於第1位置時、第1噴射板520之噴射孔開閉的形態的圖式。參照圖13,當第2噴射板540位於第1位置時,第1可變孔541位於與1固定孔522及第2固定孔524對向的位置。因此,第1固定孔522及第2固定孔524開放。 FIG. 13 is a view showing a mode in which the injection holes of the first injection plate 520 are opened and closed when the second injection plate 540 is at the first position. Referring to Fig. 13, when the second injection plate 540 is at the first position, the first variable hole 541 is located at a position facing the first fixing hole 522 and the second fixing hole 524. Therefore, the first fixing hole 522 and the second fixing hole 524 are opened.
圖14係表示當第2噴射板540位於第3位置時、第1噴射板520之噴射孔開閉的形態的圖式。參照圖14,當第2噴射板540位於第3位置時,第3可變孔543位於與第2固定孔524對向的位置。因此,第2固定孔524開放,第1固定孔522關閉。 FIG. 14 is a view showing a state in which the injection holes of the first injection plate 520 are opened and closed when the second injection plate 540 is at the third position. Referring to Fig. 14, when the second injection plate 540 is at the third position, the third variable hole 543 is located at a position opposed to the second fixing hole 524. Therefore, the second fixing hole 524 is opened, and the first fixing hole 522 is closed.
圖15係表示圖2之第2噴射板540之另一實施形態的圖式。參照圖15,第2噴射板540中,除可變孔之配置及大小之外,其他構造、功能及形狀等均與圖5之第2噴射板540相同。於第2噴射板540形成有第1可變孔541及第5可變孔545。 Fig. 15 is a view showing another embodiment of the second spray plate 540 of Fig. 2; Referring to Fig. 15, in the second injection plate 540, other structures, functions, shapes, and the like are the same as those of the second injection plate 540 of Fig. 5 except for the arrangement and size of the variable holes. The first variable hole 541 and the fifth variable hole 545 are formed in the second injection plate 540.
第1可變孔541及第5可變孔545各自設有多個。一部分第1可變孔541及一部分第5可變孔545係於第2噴射板540之半徑方向各自排列成一列。分別排列有一部分第1可變孔541及一部分第5可變孔545的列548各自設有多個。由一部分第1可變孔541及一部分第5可變孔545各自構成的各個列548係以將第2噴射板540之中心作為基準而各自成一定角度的方式排列。 A plurality of the first variable hole 541 and the fifth variable hole 545 are provided. A part of the first variable hole 541 and a part of the fifth variable hole 545 are arranged in a line in the radial direction of the second injection plate 540. A plurality of columns 548 in which a part of the first variable hole 541 and a part of the fifth variable hole 545 are arranged are provided in plurality. Each of the rows 548 including the first variable orifice 541 and the partial fifth variable orifice 545 are arranged at a predetermined angle with respect to the center of the second injection plate 540.
第1可變孔541形成於第2噴射板540之中央區域s21及邊緣區域s22。第1可變孔541之大小與第1固定孔522及第2固定孔524之大小相同、或小於第1固定孔522及第2固定孔524之大小。 The first variable hole 541 is formed in the central region s21 and the edge region s22 of the second injection plate 540. The size of the first variable hole 541 is equal to or smaller than the size of the first fixing hole 522 and the second fixing hole 524 or smaller than the size of the first fixing hole 522 and the second fixing hole 524.
第5可變孔545形成於第2噴射板540之中央區域s21及邊緣區域s22。排列有一部分第5可變孔545的各列548e係以將第2噴射板540之中心作為基準而與排列有一部分第1可變孔541的列548a成一定角度的方式排列。排列有一部分第5可變孔545的列548e與排列有一部分第1可變孔541的列548a所成的角度的大小係小於排列有一部分第1可變孔541的列548a之間的角度。第5可變孔545之大小與第1固定孔522及第2固定孔524之大小相同、或小於第1固定孔522及第2固定孔524之大小。配置於第2噴射板540之中央區域s21的第5可變孔545、與配置於第2噴射板540之邊緣區域s22的第5可變孔之大小形成為彼此不同。 The fifth variable hole 545 is formed in the central region s21 and the edge region s22 of the second injection plate 540. Each of the rows 548e in which a part of the fifth variable holes 545 are arranged is arranged at a predetermined angle with respect to the row 548a in which a part of the first variable holes 541 are arranged with reference to the center of the second injection plate 540. The angle between the row 548e in which a part of the fifth variable holes 545 are arranged and the row 548a in which a part of the first variable holes 541 are arranged is smaller than the angle between the rows 548a in which a part of the first variable holes 541 are arranged. The size of the fifth variable hole 545 is the same as or smaller than the size of the first fixing hole 522 and the second fixing hole 524 or smaller than the size of the first fixing hole 522 and the second fixing hole 524. The fifth variable hole 545 disposed in the central portion s21 of the second injection plate 540 and the fifth variable hole disposed in the edge region s22 of the second injection plate 540 are formed to be different from each other.
以下,對於藉由圖15之第2噴射板540的旋轉而按第1噴射板500的區域來調節噴射量的形態進行說明。 Hereinafter, a mode in which the injection amount is adjusted in the region of the first injection plate 500 by the rotation of the second injection plate 540 of FIG. 15 will be described.
圖16至圖17係表示自上部觀察第1噴射板520及圖15之第2噴射板540於上下方向依序結合的形態的圖式。 16 to 17 are views showing a state in which the first injection plate 520 and the second injection plate 540 of Fig. 15 are sequentially joined in the vertical direction from the upper side.
圖16係用於對當第2噴射板540位於第1位置時、按第1噴射板520的區域所區分的噴射量進行說明 的圖式。參照圖16,當第2噴射板540位於第1位置時,第1可變孔541位於與第1固定孔522及第2固定孔524對向的位置。因此,第1固定孔522及第2固定孔524開放。第1可變孔541之大小設為彼此相同。因此,通過第1固定孔522之氣體或電漿的噴射量與通過第2固定孔524之氣體或電漿的噴射量相同。 FIG. 16 is a view for explaining the injection amount divided by the area of the first injection plate 520 when the second injection plate 540 is at the first position. The pattern. Referring to Fig. 16, when the second injection plate 540 is at the first position, the first variable hole 541 is located at a position facing the first fixing hole 522 and the second fixing hole 524. Therefore, the first fixing hole 522 and the second fixing hole 524 are opened. The sizes of the first variable holes 541 are set to be the same as each other. Therefore, the injection amount of the gas or the plasma passing through the first fixing hole 522 is the same as the amount of the gas or plasma passing through the second fixing hole 524.
圖17係用於對當第2噴射板540位於第2位置時、按第1噴射板的區域區分的噴射量進行說明的圖式。參照圖17,當第2噴射板540位於第2位置時,第5可變孔545位於與第1固定孔522及第2固定孔524對向的位置。因此,第1固定孔522及第2固定孔524開放,通過第1固定孔522之氣體或電漿之噴射量與通過第2固定孔524之氣體或電漿之噴射量不同。 FIG. 17 is a view for explaining an injection amount that is divided into regions of the first injection plate when the second injection plate 540 is at the second position. Referring to Fig. 17, when the second injection plate 540 is at the second position, the fifth variable hole 545 is located at a position opposed to the first fixing hole 522 and the second fixing hole 524. Therefore, the first fixing hole 522 and the second fixing hole 524 are opened, and the amount of gas or plasma sprayed through the first fixing hole 522 is different from the amount of gas or plasma injected through the second fixing hole 524.
以下,對於圖2之擋板組件500之另一實施形態進行說明。 Hereinafter, another embodiment of the baffle assembly 500 of Fig. 2 will be described.
圖18係用於說明圖2之第1噴射板520之第3固定孔526的圖式。圖4之第1噴射板520具有2個區域。與此不同,第1噴射板520具有3個區域。參照圖18,第1噴射板520具有中央區域s11、邊緣區域s12及中間區域s13。中間區域s13形成於中央區域s11與邊緣區域s12之間。 Fig. 18 is a view for explaining the third fixing hole 526 of the first injection plate 520 of Fig. 2 . The first spray plate 520 of Fig. 4 has two regions. Unlike this, the first spray plate 520 has three regions. Referring to Fig. 18, the first spray plate 520 has a central portion s11, an edge region s12, and an intermediate portion s13. The intermediate portion s13 is formed between the central region s11 and the edge region s12.
於第1噴射板520,進而形成有第3固定孔526。第1噴射板520之整體形態係與上述實施形態相同。 Further, a third fixing hole 526 is formed in the first injection plate 520. The overall configuration of the first spray plate 520 is the same as that of the above embodiment.
第3固定孔526之大小及形狀係形成為與第1 固定孔522及第2固定孔524大致相同。第3固定孔526設有多個。第3固定孔526形成於中間區域s13。一部分第3固定孔526與一部分第1固定孔522及一部分第2固定孔524係於第1噴射板520之半徑方向設成一列。排列有一部分第3固定孔之列的數量與排列有一部分第1固定孔522及一部分第2固定孔524之列的數量相同。 The size and shape of the third fixing hole 526 are formed to be the first The fixing hole 522 and the second fixing hole 524 are substantially the same. A plurality of third fixing holes 526 are provided. The third fixing hole 526 is formed in the intermediate portion s13. A part of the third fixing holes 526 and a part of the first fixing holes 522 and a part of the second fixing holes 524 are arranged in a row in the radial direction of the first injection plate 520. The number of rows in which a part of the third fixing holes are arranged is the same as the number in which a part of the first fixing holes 522 and a part of the second fixing holes 524 are arranged.
圖19係表示第2噴射板540之又一實施形態的圖式。圖5、圖9、圖12及圖15之第2噴射板540具有2個區域。與此不同,第2噴射板540具有3個區域。參照圖19,第2噴射板540具有中央區域s21、邊緣區域s22及中間區域s23。中間區域s23形成於中央區域s21與邊緣區域s22之間。 Fig. 19 is a view showing still another embodiment of the second injection plate 540. The second injection plate 540 of Figs. 5, 9, 12, and 15 has two regions. Unlike this, the second injection plate 540 has three regions. Referring to Fig. 19, the second ejection plate 540 has a central region s21, an edge region s22, and an intermediate region s23. The intermediate portion s23 is formed between the central region s21 and the edge region s22.
第2噴射板540中,除第4可變孔544之配置之外,其他構造、功能及形狀等均與圖5之第2噴射板540。於第2噴射板540,進而形成有第4可變孔544。第4可變孔544設有多個。一部分第4可變孔544與第2可變孔542及第3可變孔543係於第2噴射板540之半徑方向排列成一列。排列有一部分第4可變孔544之列548d設有多個。由一部分第4可變孔544各自構成的各個列548d係以將第2噴射板540之中心作為基準而各自成一定角度的方式排列。第4可變孔544形成於中間區域s23。 In addition to the arrangement of the fourth variable hole 544, the second injection plate 540 has the other structure, function, shape, and the like, and is the second injection plate 540 of FIG. A fourth variable hole 544 is further formed in the second spray plate 540. A plurality of fourth variable holes 544 are provided. A part of the fourth variable hole 544, the second variable hole 542, and the third variable hole 543 are arranged in a line in the radial direction of the second injection plate 540. A plurality of rows 548d of a part of the fourth variable holes 544 are arranged. Each of the rows 548d formed of a part of the fourth variable holes 544 are arranged at a predetermined angle with respect to the center of the second injection plate 540 as a reference. The fourth variable hole 544 is formed in the intermediate portion s23.
以下,對於藉由圖19之第2噴射板540之旋轉而使第1噴射板520之噴射孔開閉的形態進行說明。 Hereinafter, a mode in which the injection holes of the first injection plate 520 are opened and closed by the rotation of the second injection plate 540 of FIG. 19 will be described.
圖20至圖22係自上部觀察第1噴射板520 及圖19之第2噴射板540於上下方向依序結合的形態的圖式。 20 to 22 are the first spray plate 520 viewed from the upper portion. FIG. 19 is a view showing a form in which the second injection plates 540 of FIG. 19 are sequentially joined in the vertical direction.
圖20係表示當第2噴射板540位於第1位置時、第1噴射板520之噴射孔開閉的形態的圖式。參照圖20,當第2噴射板540位於第1位置時,第1可變孔541位於與第1固定孔522、第2固定孔524及第3固定孔526對向的位置。因此,第1固定孔522、第2固定孔524及第3固定孔526開放。 FIG. 20 is a view showing a state in which the injection holes of the first injection plate 520 are opened and closed when the second injection plate 540 is at the first position. Referring to Fig. 20, when the second injection plate 540 is at the first position, the first variable hole 541 is located at a position facing the first fixing hole 522, the second fixing hole 524, and the third fixing hole 526. Therefore, the first fixing hole 522, the second fixing hole 524, and the third fixing hole 526 are opened.
圖21係表示當第2噴射板540位於第2位置時、第1噴射板520之噴射孔開閉的形態的圖式。參照圖21,當第2噴射板540位於第2位置時,與第2可變孔542及第2可變孔542排列成一列的第4可變孔544係位於與第1固定孔522及第3固定孔526對向的位置。因此,第1固定孔522及第3固定孔526開放,第2固定孔524關閉。 FIG. 21 is a view showing a state in which the injection holes of the first injection plate 520 are opened and closed when the second injection plate 540 is at the second position. Referring to Fig. 21, when the second injection plate 540 is at the second position, the fourth variable hole 544 which is arranged in a line with the second variable hole 542 and the second variable hole 542 is located in the first fixing hole 522 and the first fixing hole 522. 3 The position at which the fixing hole 526 is opposed. Therefore, the first fixing hole 522 and the third fixing hole 526 are opened, and the second fixing hole 524 is closed.
圖22係表示當第2噴射板540位於第3位置時、第1噴射板520之噴射孔開閉的形態的圖式。參照圖22,當第2噴射板540位於第3位置時,第3可變孔543及與第3可變孔543排列成一列的第4可變孔544係位於與第2固定孔524及第3固定孔526對向的位置。因此,第2固定孔524及第3固定孔526開放,第1固定孔522關閉。 FIG. 22 is a view showing a mode in which the injection holes of the first injection plate 520 are opened and closed when the second injection plate 540 is at the third position. Referring to Fig. 22, when the second injection plate 540 is at the third position, the third variable hole 543 and the fourth variable hole 544 arranged in a line with the third variable hole 543 are located in the second fixing hole 524 and the second 3 The position at which the fixing hole 526 is opposed. Therefore, the second fixing hole 524 and the third fixing hole 526 are opened, and the first fixing hole 522 is closed.
圖23係表示圖2之擋板組件500之又一實施形態的圖式。參照圖23,與上述實施形態不同,驅動單元 560係利用磁力而使第2噴射板540以其中心為軸旋轉。 Figure 23 is a diagram showing still another embodiment of the baffle assembly 500 of Figure 2 . Referring to Fig. 23, unlike the above embodiment, the driving unit The 560 system rotates the second injection plate 540 about its center by a magnetic force.
擋板組件500中,除驅動板562a及第2噴射板540之外,其他構造及功能等均與圖3之擋板組件500相似。 The baffle assembly 500 is similar to the baffle assembly 500 of FIG. 3 except for the drive plate 562a and the second spray plate 540.
第2噴射板540之側部設有多個磁鐵。磁鐵亦可為永久磁鐵。各個磁鐵係以使直接密接之磁鐵以彼此不同的極性朝向第2噴射板540之半徑方向的方式而設。各個磁鐵係以將第2噴射板540之中心作為基準而成一定角度的方式排列。 A plurality of magnets are provided on the side of the second spray plate 540. The magnet can also be a permanent magnet. Each of the magnets is provided such that the magnets that are in direct contact with each other are oriented in a radial direction different from each other toward the radial direction of the second injection plate 540. Each of the magnets is arranged at a constant angle with respect to the center of the second injection plate 540 as a reference.
驅動板562a位於圖3之驅動齒輪562所配置的位置。驅動板562a呈圓板狀。驅動板562a之側部設有永久磁鐵。各個磁鐵係以使直接密接之磁鐵以彼此不同的極性朝向第2噴射板540之半徑方向的方式而設。各個磁鐵係以將驅動板562a之中心作為基準而成一定角度的方式排列。 The drive plate 562a is located at the position where the drive gear 562 of FIG. 3 is disposed. The drive plate 562a has a disk shape. A permanent magnet is provided on a side portion of the drive plate 562a. Each of the magnets is provided such that the magnets that are in direct contact with each other are oriented in a radial direction different from each other toward the radial direction of the second injection plate 540. Each of the magnets is arranged at a predetermined angle with the center of the drive plate 562a as a reference.
驅動板562a係藉由自驅動軸564傳遞之驅動力而以其中心為軸旋轉。第2噴射板540係藉助於磁力且藉由驅動板562a的旋轉而以成一定角度的方式旋轉。 The drive plate 562a is rotated about its center by the driving force transmitted from the drive shaft 564. The second spray plate 540 is rotated at an angle by the rotation of the drive plate 562a by the magnetic force.
驅動單元560設於製程腔室100之內側或外側。 The driving unit 560 is disposed inside or outside the processing chamber 100.
驅動單元包含上述圖3及圖23之驅動單元560以外的多種形態。 The drive unit includes various forms other than the drive unit 560 of FIGS. 3 and 23 described above.
圖24係表示圖2之擋板組件500之又一實施形態的圖式。參照圖24,第2噴射板540設於第1噴射板 520的內部。 Figure 24 is a diagram showing still another embodiment of the baffle assembly 500 of Figure 2 . Referring to Fig. 24, the second injection plate 540 is provided on the first injection plate. The interior of the 520.
第1噴射板520呈中空的圓板狀。第1噴射板520具有上表面520a、下表面520b及將上表面520a與下表面520b連結之側面520c。於上表面520a及下表面520b形成有第1固定孔522及第2固定孔524。第1固定孔522及第2固定孔524係以與圖4之第1固定孔522及第2固定孔524相同的形態配置且形成。於第1噴射板520的側面520c形成有開口520d。第2噴射板540之側面的齒輪係通過開口520d而與驅動齒輪562嚙合。 The first spray plate 520 has a hollow disk shape. The first spray plate 520 has an upper surface 520a, a lower surface 520b, and a side surface 520c that connects the upper surface 520a and the lower surface 520b. A first fixing hole 522 and a second fixing hole 524 are formed in the upper surface 520a and the lower surface 520b. The first fixing hole 522 and the second fixing hole 524 are formed in the same manner as the first fixing hole 522 and the second fixing hole 524 of FIG. 4 . An opening 520d is formed in the side surface 520c of the first spray plate 520. The gear train on the side of the second injection plate 540 is meshed with the drive gear 562 through the opening 520d.
第2噴射板540之形態及功能等係與上述實施形態相同。 The form, function, and the like of the second injection plate 540 are the same as those of the above embodiment.
圖25係表示第2噴射板540結合於第1噴射板520之下部的基板處理設備2的圖式。參照圖25,除擋板組件500之外,其他構成、功能及形態等均與圖2之基板處理設備1大致相似。 FIG. 25 is a view showing the substrate processing apparatus 2 in which the second ejection plate 540 is coupled to the lower portion of the first ejection plate 520. Referring to Fig. 25, other configurations, functions, and forms other than the shutter assembly 500 are substantially similar to the substrate processing apparatus 1 of Fig. 2.
當第2噴射板540結合於第1噴射板520之下部時,擋板組件500設於擴散室144的下端。擋板組件500之構成與圖2之擋板組件500之構成相同。然而,第1噴射板520係固定於擴散室144的下端。第1噴射板520及第2噴射板540係於上下方向依序設置。 When the second spray plate 540 is coupled to the lower portion of the first spray plate 520, the shutter assembly 500 is provided at the lower end of the diffusion chamber 144. The baffle assembly 500 is constructed identically to the baffle assembly 500 of FIG. However, the first spray plate 520 is fixed to the lower end of the diffusion chamber 144. The first spray plate 520 and the second spray plate 540 are disposed in the vertical direction.
如上所述,本發明之基板處理設備1、2根據製程氣體的種類、製程步驟或其他製程條件而按擋板組件500下部之各區域來調節噴射率,藉此,能對基板之表面均一地噴射氣體或電漿。 As described above, the substrate processing apparatus 1, 2 of the present invention adjusts the ejection rate in accordance with the area of the lower portion of the shutter assembly 500 in accordance with the type of the process gas, the manufacturing process, or other process conditions, whereby the surface of the substrate can be uniformly formed. Spray gas or plasma.
上述實施形態中,係利用採用電感耦合電漿源方式ICP之基板處理設備進行說明。然而,本發明之實施形態亦可適用於電容耦合電漿源式CCP或遠程電漿方式等所有形態的電漿源。 In the above embodiment, the substrate processing apparatus using an inductively coupled plasma source type ICP will be described. However, embodiments of the present invention are also applicable to all forms of plasma sources such as capacitively coupled plasma source CCP or remote plasma.
以上之詳細說明僅對本發明進行例示。而且,前述內容中表示本發明之理想實施形態而進行說明,本發明能於多種其他組合、變更及環境下使用。即,可於本說明書中揭示之發明的概念之範圍內、與前述揭示內容等價之範圍及/或業界之技術或知識之範圍內進行變更或修正。前述實施形態係對於用於體現本發明之技術思想的最佳狀態進行說明,亦可根據本發明之具體適用領域及用途中的要求進行多種變更。因此,以上之發明的詳細說明並非將本發明限制於所揭示之實施形態。而且,須解釋為,隨附之申請專利範圍還包括其他實施形態。 The above detailed description is merely illustrative of the invention. Further, the foregoing description of the preferred embodiments of the present invention is described, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications can be made within the scope of the inventive concept disclosed in the present specification, and equivalent to the scope of the above-described disclosure and/or the technical or knowledge of the industry. The above-described embodiments are described in the best mode for embodying the technical idea of the present invention, and various modifications can be made in accordance with the specific fields of application and use of the present invention. Therefore, the detailed description of the invention above is not intended to limit the invention. Moreover, it must be construed that the scope of the accompanying patent application also includes other embodiments.
1‧‧‧基板處理設備 1‧‧‧Substrate processing equipment
10‧‧‧基板 10‧‧‧Substrate
100‧‧‧製程腔室 100‧‧‧Processing chamber
120‧‧‧處理室 120‧‧‧Processing room
122‧‧‧排氣孔 122‧‧‧ venting holes
123‧‧‧接地線 123‧‧‧ Grounding wire
124‧‧‧排氣線 124‧‧‧Exhaust line
126‧‧‧泵 126‧‧‧ pump
140‧‧‧電漿產生室 140‧‧‧The plasma generation room
142‧‧‧放電室 142‧‧‧Discharge room
144‧‧‧擴散室 144‧‧‧Diffuse room
200‧‧‧基板支撐單元 200‧‧‧Substrate support unit
220‧‧‧支撐板 220‧‧‧support board
240‧‧‧支撐軸 240‧‧‧Support shaft
300‧‧‧氣體供給單元 300‧‧‧ gas supply unit
320‧‧‧氣體供給線 320‧‧‧ gas supply line
340‧‧‧氣體儲存部 340‧‧‧ Gas Storage Department
360‧‧‧氣體埠 360‧‧‧ gas 埠
400‧‧‧電漿源 400‧‧‧ Plasma source
420‧‧‧天線 420‧‧‧Antenna
440‧‧‧電源 440‧‧‧Power supply
500‧‧‧擋板組件 500‧‧‧Baffle assembly
520‧‧‧第1噴射板 520‧‧‧1st spray plate
540‧‧‧第2噴射板 540‧‧‧2nd spray plate
560‧‧‧驅動單元 560‧‧‧ drive unit
562‧‧‧驅動齒輪 562‧‧‧ drive gear
564‧‧‧連結構件 564‧‧‧Connected components
566‧‧‧馬達 566‧‧‧Motor
Claims (27)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130156317A KR101505948B1 (en) | 2013-12-16 | 2013-12-16 | A baffle assembly and an apparatus for treating a substrate with the baffle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201526102A true TW201526102A (en) | 2015-07-01 |
| TWI555081B TWI555081B (en) | 2016-10-21 |
Family
ID=53028576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103139616A TWI555081B (en) | 2013-12-16 | 2014-11-14 | A baffle assembly and an apparatus for treating a substrate with the baffle |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5902795B2 (en) |
| KR (1) | KR101505948B1 (en) |
| TW (1) | TWI555081B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI716204B (en) * | 2019-11-14 | 2021-01-11 | 南韓商Psk有限公司 | Baffle unit and substrate processing apparatus including the same |
| TWI748980B (en) * | 2016-01-15 | 2021-12-11 | 美商得昇科技股份有限公司 | Plasma processing apparatus with variable pattern separation grid for plasma chamber and related method thereof |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9953829B2 (en) * | 2015-08-27 | 2018-04-24 | Toshiba Memory Corporation | Image processing apparatus with improved slide printout based on layout data |
| KR101869617B1 (en) * | 2016-12-16 | 2018-07-23 | 한국기초과학지원연구원 | Apparatus for surface treatment with plasma in atmospheric pressure |
| JP2018148143A (en) * | 2017-03-08 | 2018-09-20 | 株式会社東芝 | Shower plate, processing apparatus, and discharge method |
| KR102186073B1 (en) * | 2019-06-24 | 2020-12-04 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| CN116246926B (en) * | 2022-12-30 | 2025-12-12 | 北京北方华创微电子装备有限公司 | A method for cleaning semiconductor process equipment and its rectifier structure. |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0801416A1 (en) * | 1996-04-10 | 1997-10-15 | Applied Materials, Inc. | Plasma processing chamber with epicyclic magnet source assembly |
| JPH11307454A (en) * | 1998-04-17 | 1999-11-05 | Nec Kyushu Ltd | Gas distributor |
| US6770146B2 (en) * | 2001-02-02 | 2004-08-03 | Mattson Technology, Inc. | Method and system for rotating a semiconductor wafer in processing chambers |
| KR100400044B1 (en) * | 2001-07-16 | 2003-09-29 | 삼성전자주식회사 | Shower head of wafer treatment apparatus having gap controller |
| KR100663351B1 (en) * | 2004-11-12 | 2007-01-02 | 삼성전자주식회사 | Plasma processing equipment |
| KR20110081690A (en) * | 2010-01-08 | 2011-07-14 | 세메스 주식회사 | Organometallic Chemical Vapor Deposition Apparatus Using Rotary Shower Head |
| US8988012B2 (en) * | 2010-03-31 | 2015-03-24 | Tokyo Electron Limited | Dielectric window for plasma processing apparatus, plasma processing apparatus and method for mounting dielectric window for plasma processing apparatus |
| US20130203259A1 (en) * | 2012-02-07 | 2013-08-08 | Lam Research Corporation | Pressure control valve assembly of plasma processing chamber and rapid alternating process |
| KR101283571B1 (en) * | 2012-03-12 | 2013-07-08 | 피에스케이 주식회사 | Process treating member, substrate treating apparatus including the member and method using the apparatus |
-
2013
- 2013-12-16 KR KR1020130156317A patent/KR101505948B1/en not_active Expired - Fee Related
-
2014
- 2014-11-14 TW TW103139616A patent/TWI555081B/en active
- 2014-11-17 JP JP2014232965A patent/JP5902795B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI748980B (en) * | 2016-01-15 | 2021-12-11 | 美商得昇科技股份有限公司 | Plasma processing apparatus with variable pattern separation grid for plasma chamber and related method thereof |
| TWI716204B (en) * | 2019-11-14 | 2021-01-11 | 南韓商Psk有限公司 | Baffle unit and substrate processing apparatus including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015119177A (en) | 2015-06-25 |
| KR101505948B1 (en) | 2015-03-26 |
| JP5902795B2 (en) | 2016-04-13 |
| TWI555081B (en) | 2016-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI555081B (en) | A baffle assembly and an apparatus for treating a substrate with the baffle | |
| JP5102706B2 (en) | Baffle plate and substrate processing apparatus | |
| TWI541891B (en) | A plasma reactor and a method for fabricating a semiconductor substrate | |
| JP6936884B2 (en) | Symmetric chamber body design architecture to address variable processing volumes with improved flow uniformity / gas conductance | |
| US10770269B2 (en) | Apparatus and methods for reducing particles in semiconductor process chambers | |
| KR101515896B1 (en) | Gas shower device having gas curtain and apparatus for depositing film using the same | |
| JP6811732B2 (en) | Gas control in the processing chamber | |
| KR102492797B1 (en) | Substrate treating apparatus having a showerhead | |
| KR20170074755A (en) | Showerhead assembly | |
| JP2009224441A (en) | Showerhead and substrate processing apparatus | |
| JP2018528616A (en) | Shower head support structure | |
| CN101316473B (en) | Apparatus and method for treating substrate using plasma | |
| KR102458733B1 (en) | Plasma processing device | |
| TW201606844A (en) | Baffle and substrate treating apparatus including the same | |
| TW201901797A (en) | Process chamber and semiconductor processing apparatus | |
| KR101526507B1 (en) | Apparatus and method for treating substrate | |
| KR101552667B1 (en) | A baffle assembly and an apparatus for treating a substrate with the baffle | |
| KR20200129170A (en) | Showerhead with interlaced gas supply and removal and methods of use | |
| KR101540718B1 (en) | substrate processing apparatus | |
| US20180148841A1 (en) | Shower head and roll-to-roll plasma-processing apparatus including the same | |
| KR100562994B1 (en) | Plasma processing equipment | |
| KR101029776B1 (en) | Gas Supply Device of Substrate Processing Equipment | |
| KR100621419B1 (en) | Plasma processing apparatus with large area multi-electrode array | |
| KR200476047Y1 (en) | Substrate processing apparatus provided with baffle | |
| KR20120038381A (en) | Plasma processing apparatus and processing gas supply structure thereof |