TW201510814A - Sensor device, input device, and electronic device - Google Patents
Sensor device, input device, and electronic device Download PDFInfo
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0448—Details of the electrode shape, e.g. for enhancing the detection of touches, for generating specific electric field shapes, for enhancing display quality
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0414—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using force sensing means to determine a position
- G06F3/04144—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using force sensing means to determine a position using an array of force sensing means
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0447—Position sensing using the local deformation of sensor cells
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04107—Shielding in digitiser, i.e. guard or shielding arrangements, mostly for capacitive touchscreens, e.g. driven shields, driven grounds
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Quality & Reliability (AREA)
- Position Input By Displaying (AREA)
Abstract
Description
本技術係關於一種可靜電檢測輸入操作之感測裝置、輸入裝置及電子機器。 The present technology relates to a sensing device, an input device, and an electronic device that can electrostatically detect an input operation.
作為電子機器用之感測裝置,已知有如下構成:例如具備電容元件,而可檢測針對輸入操作面之操作子之操作位置與按壓力(例如,參照專利文獻1)。 As a sensor device for an electronic device, for example, a capacitor element is provided, and an operation position and a pressing force of an operator for inputting an operation surface can be detected (for example, refer to Patent Document 1).
[專利文獻1]日本專利特開2011-170659號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-170659
近年來,推行有藉由利用手指動作之手勢操作進行自由度較高之輸入之方法,但進而可期待,若能夠以較高之精度穩定地檢測操作面上之按壓力,則可實現更多樣之輸入操作。例如,於以靜電檢測輸入操作之方式構成之感測裝置中,必須抑制因來自外部之電磁雜訊之影響而導致之檢測精度降低。 In recent years, there has been a method of inputting a higher degree of freedom by a gesture operation using a finger movement, but it is expected that more stable detection of the pressing force on the operation surface with higher precision can be realized. The input operation. For example, in a sensing device configured to perform an electrostatic detecting input operation, it is necessary to suppress a decrease in detection accuracy due to an influence of electromagnetic noise from the outside.
鑒於如上情況,本技術之目的在於提供一種可抑制因來自外部之電磁雜訊之影響而導致之檢測精度降低之感測裝置、輸入裝置及電子機器。 In view of the above circumstances, an object of the present invention is to provide a sensing device, an input device, and an electronic device that can suppress a decrease in detection accuracy due to an influence of external electromagnetic noise.
為達成以上目的,本技術之一形態之感測裝置包括電極基板及屏蔽層。 In order to achieve the above object, a sensing device according to one aspect of the present technology includes an electrode substrate and a shielding layer.
上述電極基板包含複數條第1電極線及複數條第2電極線,且由分別形成於上述複數條第1電極線與上述複數條第2電極線之複數個對向區域的複數個電容感測器呈矩陣狀排列而成。 The electrode substrate includes a plurality of first electrode lines and a plurality of second electrode lines, and is formed by a plurality of capacitance sensings formed in a plurality of opposing regions of the plurality of first electrode lines and the plurality of second electrode lines The devices are arranged in a matrix.
上述屏蔽層設置於上述電極基板且包含導體膜,該導體膜遮蔽連接上述複數個對向區域間之上述複數條第2電極線之至少一部分配線區域。 The shielding layer is provided on the electrode substrate and includes a conductor film that shields at least a part of the wiring region connecting the plurality of second electrode lines between the plurality of opposing regions.
於上述感測裝置中,上述屏蔽層作為被覆上述配線區域之電磁遮罩而發揮功能。藉此,可抑制因來自外部之電磁雜訊之影響而導致之各電容感測器之檢測精度降低。 In the above sensing device, the shield layer functions as an electromagnetic mask covering the wiring region. Thereby, it is possible to suppress a decrease in the detection accuracy of each of the capacitance sensors due to the influence of electromagnetic noise from the outside.
上述複數條第1電極線與上述複數條第2電極線亦可於上述電極基板之厚度方向上相隔而配置。於此情形時,上述複數個電容感測器分別形成於上述複數條第1電極線與上述複數條第2電極線之交叉區域。 The plurality of first electrode lines and the plurality of second electrode lines may be arranged apart from each other in the thickness direction of the electrode substrate. In this case, the plurality of capacitance sensors are respectively formed at intersections of the plurality of first electrode lines and the plurality of second electrode lines.
上述電極基板亦可包含支持上述複數條第1電極線之第1絕緣層、及支持上述複數條第2電極線之第2絕緣層。於此情形時,上述屏蔽層例如設置於上述第1絕緣層。 The electrode substrate may include a first insulating layer supporting the plurality of first electrode lines and a second insulating layer supporting the plurality of second electrode lines. In this case, the shield layer is provided, for example, on the first insulating layer.
上述屏蔽層亦可設置於與上述複數條第1電極線同一平面上。上述導體膜亦可由與上述複數條第1電極線相同之材料構成。上述導體膜亦可包含配置於上述複數條第1電極線各者之間的複數條第3電極線。上述導體膜亦可進而包含將上述複數條第3電極線相互連接之配線部。 The shielding layer may be disposed on the same plane as the plurality of first electrode lines. The conductor film may be made of the same material as the plurality of first electrode lines. The conductor film may include a plurality of third electrode lines disposed between each of the plurality of first electrode lines. The conductor film may further include a wiring portion that connects the plurality of third electrode lines to each other.
另一方面,上述複數個電容感測器亦可分別形成於與在上述電極基板之面內方向上相互對向之上述複數條第1電極線及上述複數條第2電極線之對向區域。於此情形時,上述屏蔽層亦可進而包含配置 於上述導體膜與上述配線區域間之絕緣膜。 On the other hand, the plurality of capacitance sensors may be formed in opposite regions of the plurality of first electrode lines and the plurality of second electrode lines, which face each other in the in-plane direction of the electrode substrate. In this case, the shielding layer may further include a configuration An insulating film between the conductor film and the wiring region.
上述電極基板亦可包含設置於上述複數條第1電極線與上述複數條第2電極線之交叉部之複數個跨接配線部。上述導體膜亦可設置於與上述複數個跨接配線部同一平面上。上述屏蔽層亦可被覆上述複數個跨接配線部。上述導體膜亦可由與上述複數個跨接配線部相同之材料構成。上述屏蔽層亦可進而遮蔽連接上述複數個對向區域間之上述複數條第1電極線之至少一部分配線區域。 The electrode substrate may include a plurality of jumper wiring portions provided at intersections of the plurality of first electrode lines and the plurality of second electrode lines. The conductor film may be provided on the same plane as the plurality of jumper wiring portions. The shielding layer may also cover the plurality of jumper wiring portions. The conductor film may be made of the same material as the plurality of jumper wiring portions. The shielding layer may further shield at least a portion of the wiring regions connecting the plurality of first electrode lines between the plurality of opposing regions.
上述複數條第2電極線亦可包含外周配線部,該外周配線部形成於形成有呈矩陣狀排列之上述複數個電容感測器之檢測區域之外側。於此情形時,上述屏蔽層亦可進而遮蔽上述外周配線部之至少一部分。 The plurality of second electrode lines may include an outer peripheral wiring portion formed on the outer side of the detection region in which the plurality of capacitive sensors arranged in a matrix are formed. In this case, the shielding layer may further shield at least a part of the outer peripheral wiring portion.
上述感測裝置亦可進而包括:可變形之第1導體層,其與上述電極基板之一主面對向而配置;及第1支持體,其包含連接上述第1導體層與上述電極基板間之複數個第1構造體。又,上述感測裝置亦可進而包括:第2導體層,其與上述電極基板之另一主面對向而配置;及第2支持體,其包含連接上述第2導體層與上述電極基板間之複數個第2構造體。 The sensing device may further include: a deformable first conductor layer disposed to face one of the electrode substrates; and a first support including a connection between the first conductor layer and the electrode substrate A plurality of first structures. Furthermore, the sensing device may further include: a second conductor layer disposed to face the other main surface of the electrode substrate; and a second support including a connection between the second conductor layer and the electrode substrate A plurality of second structures.
本技術之一形態之輸入裝置包括操作構件、電極基板及屏蔽層。 An input device of one form of the present technology includes an operating member, an electrode substrate, and a shielding layer.
上述操作構件包含輸入操作面。 The above operating member includes an input operating surface.
上述電極基板包含複數條第1電極線及複數條第2電極線,且由分別形成於上述複數條第1電極線與上述複數條第2電極線之複數個對向區域的複數個電容感測器呈矩陣狀排列而成。 The electrode substrate includes a plurality of first electrode lines and a plurality of second electrode lines, and is formed by a plurality of capacitance sensings formed in a plurality of opposing regions of the plurality of first electrode lines and the plurality of second electrode lines The devices are arranged in a matrix.
上述屏蔽層設置於上述操作構件與上述電極基板之間且包含導體膜,該導體膜遮蔽連接上述複數個對向區域間之上述複數條第2電極線之至少一部分配線區域。 The shielding layer is provided between the operation member and the electrode substrate, and includes a conductor film that shields at least a part of the wiring region connecting the plurality of second electrode lines between the plurality of opposing regions.
本技術之一形態之電子機器包括顯示元件、電極基板及屏蔽層。 An electronic device in one form of the present technology includes a display element, an electrode substrate, and a shielding layer.
上述顯示元件包含輸入操作面。 The above display element includes an input operation surface.
上述電極基板包含複數條第1電極線及複數條第2電極線,且由分別形成於上述複數條第1電極線與上述複數條第2電極線之複數個對向區域的複數個電容感測器呈矩陣狀排列而成。 The electrode substrate includes a plurality of first electrode lines and a plurality of second electrode lines, and is formed by a plurality of capacitance sensings formed in a plurality of opposing regions of the plurality of first electrode lines and the plurality of second electrode lines The devices are arranged in a matrix.
上述屏蔽層設置於上述顯示元件與上述電極基板之間且包含導體膜,該導體膜遮蔽連接上述複數個對向區域間之上述複數條第2電極線之至少一部分配線區域。 The shielding layer is disposed between the display element and the electrode substrate and includes a conductor film that shields at least a part of the wiring region connecting the plurality of second electrode lines between the plurality of opposing regions.
如上所述,根據本技術,可抑制因來自外部之電磁雜訊之影響而導致之檢測精度降低。 As described above, according to the present technology, it is possible to suppress a decrease in detection accuracy due to the influence of electromagnetic noise from the outside.
再者,本技術未必限定於此處所記載之效果,亦可為本揭示中所記載之任一效果。 Furthermore, the present technology is not necessarily limited to the effects described herein, and may be any of the effects described in the present disclosure.
1‧‧‧感測裝置 1‧‧‧Sensing device
10‧‧‧操作構件 10‧‧‧Operating components
11‧‧‧可撓性顯示器 11‧‧‧Flexible display
12‧‧‧金屬膜 12‧‧‧Metal film
13‧‧‧接著層 13‧‧‧Next layer
20‧‧‧電極基板 20‧‧‧Electrode substrate
20C‧‧‧電極基板 20C‧‧‧electrode substrate
20Cs‧‧‧檢測部 20Cs‧‧‧Detection Department
20s‧‧‧檢測部 20s‧‧‧Detection Department
20sa1‧‧‧檢測部 20sa1‧‧Detection Department
20sa2‧‧‧檢測部 20sa2‧‧Detection Department
20sa3‧‧‧檢測部 20sa3‧‧Detection Department
20sb1‧‧‧檢測部 20sb1‧‧‧Detection Department
20sb2‧‧‧檢測部 20sb2‧‧‧Detection Department
21‧‧‧第1配線基板 21‧‧‧1st wiring substrate
21a‧‧‧緣部 21a‧‧‧Edge
21b‧‧‧緣部 21b‧‧‧Edge
21C‧‧‧緣部 21C‧‧‧Edge
22‧‧‧第2配線基板 22‧‧‧2nd wiring substrate
23‧‧‧接著層 23‧‧‧Next layer
30‧‧‧第1支持體 30‧‧‧1st support
31‧‧‧基材 31‧‧‧Substrate
32‧‧‧構造層 32‧‧‧Structural layer
35‧‧‧接著層 35‧‧‧Next layer
40‧‧‧第2支持體 40‧‧‧2nd support
50‧‧‧導體層 50‧‧‧ conductor layer
60‧‧‧控制部 60‧‧‧Control Department
61‧‧‧運算部 61‧‧‧ Computing Department
62‧‧‧信號產生部 62‧‧‧Signal Generation Department
70‧‧‧電子機器 70‧‧‧Electronic machines
100‧‧‧輸入裝置 100‧‧‧ input device
100C‧‧‧輸入裝置 100C‧‧‧ input device
110‧‧‧第1面 110‧‧‧1st
113‧‧‧配線基板 113‧‧‧Wiring substrate
120‧‧‧第2面 120‧‧‧2nd
210‧‧‧第1電極線 210‧‧‧1st electrode line
210a‧‧‧引出線 210a‧‧‧ lead line
210b‧‧‧電極線 210b‧‧‧Electrode wire
210C‧‧‧第1電極線 210C‧‧‧1st electrode line
210D‧‧‧第1電極線 210D‧‧‧1st electrode line
210Dm‧‧‧單位電極體 210Dm‧‧‧ unit electrode body
210m‧‧‧單位電極體(第1單位電極體) 210m‧‧‧unit electrode body (1st unit electrode body)
210p‧‧‧電極線部 210p‧‧‧electrode line
210w‧‧‧輔助電極 210w‧‧‧Auxiliary electrode
210w1‧‧‧輔助電極 210w1‧‧‧Auxiliary electrode
210w2‧‧‧輔助電極 210w2‧‧‧Auxiliary electrode
210w3‧‧‧輔助電極 210w3‧‧‧Auxiliary electrode
210y‧‧‧連接部 210y‧‧‧Connecting Department
210z‧‧‧連接部 210z‧‧‧Connecting Department
211‧‧‧第1基材 211‧‧‧1st substrate
211C‧‧‧基材 211C‧‧‧Substrate
220‧‧‧第2電極線 220‧‧‧2nd electrode line
220b‧‧‧配線區域 220b‧‧‧Wiring area
220C‧‧‧第2電極線 220C‧‧‧2nd electrode line
220D‧‧‧電極線 220D‧‧‧electrode wire
220E‧‧‧電極線 220E‧‧‧Electrode wire
220F‧‧‧電極線 220F‧‧‧electrode wire
220m‧‧‧單位電極體(第2單位電極體) 220m‧‧‧unit electrode body (2nd unit electrode body)
220p‧‧‧電極線部 220p‧‧‧electrode line
220q‧‧‧跨接配線部 220q‧‧‧Spanning Wiring Department
220r‧‧‧絕緣層 220r‧‧‧Insulation
220r1‧‧‧絕緣膜 220r1‧‧‧Insulation film
220w‧‧‧輔助電極 220w‧‧‧Auxiliary electrode
220w1‧‧‧輔助電極 220w1‧‧‧Auxiliary electrode
220w2‧‧‧輔助電極 220w2‧‧‧Auxiliary electrode
220w3‧‧‧輔助電極 220w3‧‧‧Auxiliary electrode
220y‧‧‧連接部 220y‧‧‧Connecting Department
220z‧‧‧連接部 220z‧‧‧Connecting Department
221‧‧‧第2基材 221‧‧‧2nd substrate
310‧‧‧第1構造體 310‧‧‧1st structure
310a1‧‧‧第1構造體 310a1‧‧‧1st structure
310a2‧‧‧第1構造體 310a2‧‧‧1st structure
310a3‧‧‧第1構造體 310a3‧‧‧1st structure
310b1‧‧‧第1構造體 310b1‧‧‧1st structure
310b2‧‧‧第1構造體 310b2‧‧‧1st structure
310p1‧‧‧第1構造體 310p1‧‧‧1st structure
310p2‧‧‧第1構造體 310p2‧‧‧1st structure
310p3‧‧‧第1構造體 310p3‧‧‧1st structure
310p4‧‧‧第1構造體 310p4‧‧‧1st structure
320‧‧‧第1殼體 320‧‧‧1st housing
321‧‧‧第1凸部 321‧‧‧1st convex
322‧‧‧第2凸部 322‧‧‧2nd convex
323‧‧‧凹部 323‧‧‧ recess
330‧‧‧第1空間部 330‧‧‧First Space Department
330b1‧‧‧第1空間部 330b1‧‧‧1st Space Department
330p0‧‧‧第1空間部 330p0‧‧‧1st Space Department
341‧‧‧接合部 341‧‧‧ joints
410‧‧‧第2構造體 410‧‧‧2nd structure
410p0‧‧‧第2構造體 410p0‧‧‧2nd structure
410p1‧‧‧第2構造體 410p1‧‧‧2nd structure
410p2‧‧‧第2構造體 410p2‧‧‧2nd structure
420‧‧‧第2殼體 420‧‧‧ second housing
430‧‧‧第2空間部 430‧‧‧2nd Space Department
430a2‧‧‧第2空間部 430a2‧‧‧Second Space Department
430b1‧‧‧第2空間部 430b1‧‧‧Second Space Department
430b2‧‧‧第2空間部 430b2‧‧‧2nd Space Department
710‧‧‧控制器 710‧‧‧ Controller
Ca1、Ca2、Ca3‧‧‧靜電電容之變化量 Ca1, Ca2, Ca3‧‧‧Changes in electrostatic capacitance
Cb1、Cb2‧‧‧靜電電容之變化量 Cb1, Cb2‧‧‧Changes in electrostatic capacitance
Cc11、Cc12、Cc13、Cc14、Cc15‧‧‧靜電電容 Cc11, Cc12, Cc13, Cc14, Cc15‧‧‧ electrostatic capacitor
F‧‧‧力 F‧‧‧ force
F1‧‧‧力 F1‧‧‧ force
F2‧‧‧力 F2‧‧‧ force
F3‧‧‧力 F3‧‧‧ force
F4‧‧‧力 F4‧‧‧ force
h‧‧‧操作子 h‧‧‧Operator
P‧‧‧點 P‧‧‧ points
S1‧‧‧屏蔽層 S1‧‧‧Shield
S2‧‧‧屏蔽層 S2‧‧‧Shield
S3‧‧‧屏蔽層 S3‧‧‧Shield
S11‧‧‧電極線(第3電極線) S11‧‧‧electrode wire (third electrode wire)
S11b‧‧‧帶狀部 S11b‧‧‧Strip
S12‧‧‧配線部 S12‧‧‧Wiring Department
S12a‧‧‧引出線 S12a‧‧‧ lead line
S20‧‧‧開口部 S20‧‧‧ openings
S21‧‧‧導體膜 S21‧‧‧ conductor film
S22‧‧‧導體膜 S22‧‧‧ conductor film
圖1係本技術之第1實施形態之輸入裝置之概略剖面圖。 Fig. 1 is a schematic cross-sectional view showing an input device according to a first embodiment of the present technology.
圖2係上述輸入裝置之分解立體圖。 Fig. 2 is an exploded perspective view of the above input device.
圖3係上述輸入裝置之主要部分之概略剖面圖。 Fig. 3 is a schematic cross-sectional view showing the main part of the above input device.
圖4係使用上述輸入裝置之電子機器之方塊圖。 Figure 4 is a block diagram of an electronic device using the above input device.
圖5係表示於利用操作子將上述輸入裝置之第1面之點向Z軸方向下方按壓時,對上述第1及第2構造體附加之力之情況的概略剖面圖。 FIG. 5 is a schematic cross-sectional view showing a state in which a force applied to the first and second structures is pressed when the point of the first surface of the input device is pressed downward in the Z-axis direction by an operator.
圖6A、B係表示上述第1面之第1構造體上之點受到操作子之操作時之上述輸入裝置之態樣的模式性主要部分剖面圖、及表示此時自上述檢測部輸出之輸出信號之一例的圖。 6A and 6B are schematic main cross-sectional views showing the state of the input device when the point on the first structure of the first surface is operated by the operator, and the output output from the detecting unit at this time. A diagram of an example of a signal.
圖7係上述輸入裝置之電極基板之主要部分俯視圖。 Fig. 7 is a plan view showing a main part of an electrode substrate of the input device.
圖8係構成上述電極基板之第1配線基板之主要部分俯視圖。 FIG. 8 is a plan view of a main part of a first wiring board constituting the electrode substrate.
圖9係構成上述電極基板之第2配線基板之主要部分俯視圖。 FIG. 9 is a plan view of a main part of a second wiring board constituting the electrode substrate.
圖10A、B係概略性地表示上述第1配線基板之整體之俯視圖。 10A and 10B are plan views schematically showing the entire first wiring board.
圖11A係本技術之第2實施形態之輸入裝置之概略剖面圖,B係將輸入裝置之主要部分放大表示之剖面圖。 Fig. 11A is a schematic cross-sectional view showing an input device according to a second embodiment of the present technology, and B is a cross-sectional view showing an enlarged main portion of the input device.
圖12A、B係表示上述輸入裝置中之第1電極線及第2電極線之構成之主要部分俯視圖。 12A and 12B are plan views showing main parts of a configuration of a first electrode line and a second electrode line in the input device.
圖13A係上述輸入裝置中之電極基板之主要部分俯視圖,B係其A-A線剖面圖。 Fig. 13A is a plan view showing a principal part of an electrode substrate in the input device, and B is a cross-sectional view taken along line A-A.
圖14係用以說明上述輸入裝置之檢測部之構成的模式性剖面圖。 Fig. 14 is a schematic cross-sectional view for explaining the configuration of a detecting unit of the input device.
圖15A係包含屏蔽層之電極基板之主要部分俯視圖,B係其B1-B1線剖面圖,C係其C1-C1線剖面圖。 Fig. 15A is a plan view showing a main part of an electrode substrate including a shield layer, B is a cross-sectional view taken along line B1-B1, and C is a cross-sectional view taken along line C1-C1.
圖16A係包含屏蔽層之電極基板之主要部分俯視圖,B係其B2-B2線剖面圖,C係其C2-C2線剖面圖。 Fig. 16A is a plan view showing a main part of an electrode substrate including a shield layer, B is a cross-sectional view taken along line B2-B2, and C is a cross-sectional view taken along line C2-C2.
圖17係表示第1電極線之構成之變化例之主要部分俯視圖。 Fig. 17 is a plan view showing a main part of a modification of the configuration of the first electrode line.
圖18係表示第1電極線之另一構成例之概略俯視圖。 Fig. 18 is a schematic plan view showing another configuration example of the first electrode line.
圖19A-C係表示第2電極線之構成之變化例之主要部分俯視圖。 19A-C are plan views of main parts showing a variation of the configuration of the second electrode line.
圖20係表示上述輸入裝置之構成之變化例之概略剖面圖。 Fig. 20 is a schematic cross-sectional view showing a modification of the configuration of the input device.
以下,一面參照圖式一面對本技術之實施形態進行說明。 Hereinafter, an embodiment of the present technology will be described with reference to the drawings.
圖1係本技術之第1實施形態之輸入裝置100之概略剖面圖,圖2係輸入裝置100之分解立體圖,圖3係輸入裝置100之主要部分之概略剖面圖,圖4係使用輸入裝置100之電子機器70之方塊圖。以下,對本實施形態之輸入裝置100之構成進行說明。再者,圖中,X軸及Y軸表示相互正交之方向(輸入裝置100之面內方向),Z軸表示與X軸及Y軸 正交之方向(輸入裝置100之厚度方向或上下方向)。 1 is a schematic cross-sectional view of an input device 100 according to a first embodiment of the present technology, FIG. 2 is an exploded perspective view of the input device 100, FIG. 3 is a schematic cross-sectional view of a main portion of the input device 100, and FIG. 4 is an input device 100. A block diagram of an electronic machine 70. Hereinafter, the configuration of the input device 100 of the present embodiment will be described. In addition, in the figure, the X-axis and the Y-axis indicate directions orthogonal to each other (in-plane direction of the input device 100), and the Z-axis indicates X-axis and Y-axis The direction of the orthogonal direction (the thickness direction or the up and down direction of the input device 100).
輸入裝置100包括:可撓性顯示器(顯示元件)11,其受理使用者之操作;及感測裝置1,其檢測使用者之操作。輸入裝置100例如構成為可撓性觸控面板顯示器,並組入下述電子機器70中。感測裝置1及可撓性顯示器11為於與Z軸垂直之方向上延伸之平板狀。 The input device 100 includes a flexible display (display element) 11 that accepts an operation of a user, and a sensing device 1 that detects an operation of a user. The input device 100 is configured, for example, as a flexible touch panel display, and incorporated in the electronic device 70 described below. The sensing device 1 and the flexible display 11 are in the form of a flat plate extending in a direction perpendicular to the Z-axis.
可撓性顯示器11包括第1面110及第1面110之相反側之第2面120。可撓性顯示器11兼具作為輸入裝置100中之輸入操作部之功能、及作為顯示部之功能。即,可撓性顯示器11使第1面110作為輸入操作面及顯示面發揮功能,而自第1面110朝向Z軸方向上方顯示對應於使用者之操作之圖像。於第1面110顯示例如對應於鍵盤之圖像或GUI(Graphical User Interface,圖形使用者介面)等。作為對可撓性顯示器11進行操作之操作子,例如可列舉手指或筆(觸控筆)等。 The flexible display 11 includes a first surface 110 and a second surface 120 on the opposite side of the first surface 110. The flexible display 11 has both a function as an input operation unit in the input device 100 and a function as a display unit. In other words, the flexible display 11 functions as the input operation surface and the display surface, and displays an image corresponding to the user's operation from the first surface 110 toward the upper side in the Z-axis direction. For example, an image corresponding to a keyboard, a GUI (Graphical User Interface), or the like is displayed on the first surface 110. Examples of the operation for operating the flexible display 11 include a finger or a pen (stylus).
可撓性顯示器11之具體構成並無特別限定。例如,可採用所謂電子紙、有機EL(Electroluminescence,電致發光)面板、無機EL面板、液晶面板等作為可撓性顯示器11。又,可撓性顯示器11之厚度亦無特別限定,例如為0.1mm~1mm左右。 The specific configuration of the flexible display 11 is not particularly limited. For example, a so-called electronic paper, an organic EL (Electroluminescence) panel, an inorganic EL panel, a liquid crystal panel, or the like can be used as the flexible display 11. Further, the thickness of the flexible display 11 is not particularly limited, and is, for example, about 0.1 mm to 1 mm.
感測裝置1包含金屬膜(第1導體層)12、導體層(第2導體層)50、電極基板20、第1支持體30、及第2支持體40。感測裝置1配置於可撓性顯示器11之第2面120側。 The sensing device 1 includes a metal film (first conductor layer) 12, a conductor layer (second conductor layer) 50, an electrode substrate 20, a first support 30, and a second support 40. The sensing device 1 is disposed on the second surface 120 side of the flexible display 11 .
金屬膜12構成為可變形之片狀。導體層50與金屬膜12對向而配置。電極基板20包含複數條第1電極線210、及與複數條第1電極線210對向配置且與複數條第1電極線210交叉之複數條第2電極線220,且可變形地配置於金屬膜12與導體層50間,而可靜電檢測分別與金屬膜12及導體層50之距離之變化。第1支持體30包含:複數個第1構造體310,其等連接金屬膜12與電極基板20間;及第1空間部330,其形成 於複數個第1構造體310間。第2支持體40包含:複數個第2構造體410,其等分別配置於相鄰之複數個第1構造體310間而連接導體層50與電極基板20間;及第2空間部430,其形成於複數個第2構造體410間。 The metal film 12 is formed in a deformable sheet shape. The conductor layer 50 is disposed opposite to the metal film 12. The electrode substrate 20 includes a plurality of first electrode lines 210 and a plurality of second electrode lines 220 that are disposed opposite to the plurality of first electrode lines 210 and intersect the plurality of first electrode lines 210, and are deformably disposed on the metal Between the film 12 and the conductor layer 50, the change in the distance from the metal film 12 and the conductor layer 50 can be electrostatically detected. The first support 30 includes a plurality of first structures 310 that are connected between the metal film 12 and the electrode substrate 20, and a first space portion 330 that is formed. It is between a plurality of first structures 310. The second support 40 includes a plurality of second structures 410 disposed between the adjacent plurality of first structures 310 and connected between the conductor layer 50 and the electrode substrate 20, and a second space portion 430. It is formed between a plurality of second structures 410.
本實施形態之感測裝置1(輸入裝置100)係藉由靜電檢測因在可撓性顯示器11之第1面110上之輸入操作而導致之金屬膜12及電極基板20與導體層50及電極基板20間之距離之變化,而檢測該輸入操作。該輸入操作並不限定於有意識地按壓(push)第1面110上之操作,亦可為接觸(touch)操作。即,如下所述,即便為藉由通常之觸控操作而附加之微小之按壓力(例如約數十g左右),輸入裝置100亦可檢測出,故而構成為可進行與通常之觸控感測器相同之觸控操作。 The sensing device 1 (input device 100) of the present embodiment detects the metal film 12 and the electrode substrate 20 and the conductor layer 50 and the electrode by the input operation on the first surface 110 of the flexible display 11 by electrostatic detection. The input operation is detected by a change in the distance between the substrates 20. The input operation is not limited to the operation of consciously pushing the first surface 110, and may be a touch operation. That is, as described below, even if a small pressing force (for example, about several tens of g) is added by a normal touch operation, the input device 100 can detect the touch, and thus can be configured to perform a general touch feeling. The same touch operation of the detector.
輸入裝置100包含控制部60,該控制部60包含運算部61及信號產生部62。運算部61係基於檢測部20s之靜電電容之變化而檢測使用者之操作。信號產生部62係基於運算部61之檢測結果而產生操作信號。 The input device 100 includes a control unit 60 that includes a calculation unit 61 and a signal generation unit 62. The calculation unit 61 detects the operation of the user based on the change in the electrostatic capacitance of the detection unit 20s. The signal generation unit 62 generates an operation signal based on the detection result of the calculation unit 61.
圖4所示之電子機器70包含控制器710,該控制器710進行基於輸入裝置100之信號產生部62所產生之操作信號的處理。藉由控制器710處理後之操作信號例如作為圖像信號被輸出至可撓性顯示器11。可撓性顯示器11隔著可撓性配線基板113(參照圖2)而連接於搭載在控制器710之驅動電路。上述驅動電路亦可搭載於配線基板113。 The electronic device 70 shown in FIG. 4 includes a controller 710 that performs processing based on an operation signal generated by the signal generating portion 62 of the input device 100. The operation signal processed by the controller 710 is output to the flexible display 11 as an image signal, for example. The flexible display 11 is connected to a drive circuit mounted on the controller 710 via the flexible wiring board 113 (see FIG. 2). The drive circuit described above may be mounted on the wiring substrate 113.
作為電子機器70,典型而言可列舉行動電話、智慧型手機、筆記型PC(Personal Computer,個人電腦)、平板型PC、可攜式遊戲機等,但並不限定於該等可攜式電子機器,亦可應用於ATM(Automatic Teller Machine,現金自動存取款機)、自動售票機等固定式電子機器等。 The electronic device 70 is typically a mobile phone, a smart phone, a personal computer, a tablet PC, a portable game machine, etc., but is not limited to the portable electronic device. The machine can also be applied to fixed electronic equipment such as ATM (Automatic Teller Machine) and automatic ticket vending machines.
可撓性顯示器11於本實施形態中構成為輸入裝置100之操作構件10之一部分。即,輸入裝置100包含操作構件10、電極基板20、第1支 持體30、第2支持體40、及導體層50。以下,對該等各要素進行說明。 In the present embodiment, the flexible display 11 is configured as one of the operating members 10 of the input device 100. That is, the input device 100 includes the operation member 10, the electrode substrate 20, and the first branch. The holder 30, the second support 40, and the conductor layer 50. Hereinafter, each element will be described.
操作構件10具有包含第1面110及第2面120之可撓性顯示器11、與金屬膜12之積層構造。即,操作構件10包含受理使用者之操作之第1面110、及形成有金屬膜12且與第1面110為相反側之第2面120,且構成為可變形之片狀。 The operation member 10 has a laminated structure of the flexible display 11 including the first surface 110 and the second surface 120 and the metal film 12. In other words, the operation member 10 includes a first surface 110 that receives an operation of the user, and a second surface 120 on which the metal film 12 is formed and is opposite to the first surface 110, and is configured in a deformable sheet shape.
金屬膜12仿照可撓性顯示器11之變形而構成為可變形之片狀,例如由Cu(銅)、Al(鋁)等金屬箔或網狀材料構成。金屬膜12之厚度並無特別限定,例如為數10nm~數10μm。金屬膜12連接於特定之基準電位(例如,接地電位)。藉此,金屬膜12於安裝於電子機器70時發揮對電磁波之一定的屏蔽功能。即,例如可抑制電磁波自安裝於電子機器70之其他電子零件等之侵入及電磁波自輸入裝置100之洩漏,而有助於作為電子機器70之動作之穩定性。 The metal film 12 is formed into a deformable sheet shape in accordance with the deformation of the flexible display 11, and is made of, for example, a metal foil such as Cu (copper) or Al (aluminum) or a mesh material. The thickness of the metal film 12 is not particularly limited, and is, for example, several 10 nm to several 10 μm. The metal film 12 is connected to a specific reference potential (for example, a ground potential). Thereby, the metal film 12 exhibits a constant shielding function against electromagnetic waves when it is mounted on the electronic device 70. In other words, for example, it is possible to suppress the intrusion of electromagnetic waves from other electronic components mounted on the electronic device 70 and the leakage of electromagnetic waves from the input device 100, and contribute to the stability of the operation of the electronic device 70.
再者,金屬膜12之構成材料並不限定於金屬,例如亦可為如ITO(Indium Tin Oxides,氧化銦錫)等金屬氧化物材料或碳等之其他導電材料。 Further, the constituent material of the metal film 12 is not limited to a metal, and may be, for example, a metal oxide material such as ITO (Indium Tin Oxides) or another conductive material such as carbon.
例如,如圖3所示,金屬膜12係藉由將形成有金屬箔之黏著性之接著層13貼附於可撓性顯示器11而形成。接著層13之材料只要具有黏著性則無特別限定,亦可製成應用有樹脂材料之樹脂膜。或者,可由直接形成於可撓性顯示器11之蒸鍍膜或濺鍍膜等構成,亦可為印刷於可撓性顯示器11之表面之導電膏等塗膜。 For example, as shown in FIG. 3, the metal film 12 is formed by attaching the adhesive layer 13 on which the metal foil is formed to the flexible display 11. The material of the layer 13 is not particularly limited as long as it has adhesiveness, and a resin film to which a resin material is applied can also be produced. Alternatively, it may be formed of a vapor deposition film or a sputtering film formed directly on the flexible display 11, or may be a coating film such as a conductive paste printed on the surface of the flexible display 11.
導體層50構成輸入裝置100之最下部,並與金屬膜12於Z軸方向上對向而配置。導體層50例如亦作為輸入裝置100之支持板發揮功能,例如以具有較操作構件10及電極基板20更高之撓曲剛度之方式構 成。導體層50例如亦可由含有Al合金、Mg(Magnesium,鎂)合金等金屬材料之金屬板或碳纖維強化型塑膠等之導體板構成。或者,導體層50亦可具有於塑膠材料等絕緣體層上形成有鍍敷膜、蒸鍍膜、濺鍍膜、金屬箔等導體膜之積層構造。又,導體層50之厚度並無特別限定,例如為約0.3mm左右。 The conductor layer 50 constitutes the lowermost portion of the input device 100 and is disposed to face the metal film 12 in the Z-axis direction. The conductor layer 50 also functions as a support plate of the input device 100, for example, in a manner that has a higher flexural rigidity than the operating member 10 and the electrode substrate 20. to make. The conductor layer 50 may be formed of, for example, a metal plate containing a metal material such as an Al alloy or a Mg (magnesium) alloy, or a conductor plate such as a carbon fiber reinforced plastic. Alternatively, the conductor layer 50 may have a laminated structure in which a conductor film such as a plating film, a vapor deposition film, a sputtering film, or a metal foil is formed on an insulator layer such as a plastic material. Further, the thickness of the conductor layer 50 is not particularly limited, and is, for example, about 0.3 mm.
導體層50連接於特定之基準電位(例如,接地電位)。藉此,導體層50發揮作為安裝於電子機器70時之電磁屏蔽層之功能。即,例如可抑制電磁波自安裝於電子機器70之其他電子零件等之侵入及電磁波自輸入裝置100之洩漏,而有助於作為電子機器70之動作之穩定性。 The conductor layer 50 is connected to a specific reference potential (for example, a ground potential). Thereby, the conductor layer 50 functions as an electromagnetic shielding layer when mounted on the electronic device 70. In other words, for example, it is possible to suppress the intrusion of electromagnetic waves from other electronic components mounted on the electronic device 70 and the leakage of electromagnetic waves from the input device 100, and contribute to the stability of the operation of the electronic device 70.
電極基板20由包含第1電極線210之第1配線基板21與包含第2電極線220之第2配線基板22之積層體構成。 The electrode substrate 20 is composed of a laminate including a first wiring substrate 21 of the first electrode line 210 and a second wiring substrate 22 including the second electrode line 220.
第1配線基板21包含第1基材211(參照圖2)及複數條第1電極線(X電極)210。第1基材211(第1絕緣層)例如由具有可撓性之片材構成,具體而言,由PET(Polyethylene Terephthalate,聚對苯二甲酸乙二酯)、PEN(Polyethylene Naphthalate,聚萘二甲酸乙二醇酯)、PC(Poly Carbonate,聚碳酸酯)、PMMA(Poly(methyl methacrylate),聚甲基丙烯酸甲酯)、及聚醯亞胺等電絕緣性之塑膠片(膜)構成。第1基材211之厚度並無特別限定,例如為數10μm~數100μm。 The first wiring substrate 21 includes a first base material 211 (see FIG. 2 ) and a plurality of first electrode lines (X electrodes) 210 . The first base material 211 (first insulating layer) is made of, for example, a flexible sheet, and specifically, PET (Polyethylene Terephthalate, polyethylene terephthalate), PEN (Polyethylene Naphthalate) It is composed of an electrically insulating plastic sheet (film) such as ethylene glycol formate, PC (Poly Carbonate), PMMA (Poly (methyl methacrylate), polymethyl methacrylate), and polyimine. The thickness of the first base material 211 is not particularly limited, and is, for example, several 10 μm to several 100 μm.
複數條第1電極線210一體地設置於第1基材211之一面。複數條第1電極線210沿著X軸方向隔開特定間隔而排列,且沿著Y軸方向呈大致直線狀形成。第1電極線210分別被引出至第1基材211之緣部等,且分別連接於不同端子。又,第1電極線210分別經由該等端子而電性連接於控制部60。 The plurality of first electrode wires 210 are integrally provided on one surface of the first base material 211. The plurality of first electrode lines 210 are arranged at a predetermined interval along the X-axis direction, and are formed substantially linearly along the Y-axis direction. The first electrode lines 210 are respectively led out to the edge portions of the first base material 211 and the like, and are respectively connected to different terminals. Further, the first electrode lines 210 are electrically connected to the control unit 60 via the terminals.
再者,複數條第1電極線210各者可由單一電極線構成,亦可由沿著X軸方向排列之複數個電極群構成。又,構成各個電極群之複數 條電極線可連接於共用之端子,亦可分成2個以上之不同之端子而連接。 Further, each of the plurality of first electrode lines 210 may be composed of a single electrode line, or may be composed of a plurality of electrode groups arranged along the X-axis direction. Also, the plurals constituting each electrode group The strip electrodes may be connected to a common terminal or may be connected by dividing into two or more different terminals.
另一方面,第2配線基板22包含第2基材221(參照圖2)及複數條第2電極線(Y電極)220。第2基材221(第2絕緣層)與第1基材211同樣地例如由具有可撓性之片材構成,具體而言由PET、PEN、PC、PMMA、聚醯亞胺等電絕緣性之塑膠片(膜)等構成。第2基材221之厚度並無特別限定,例如為數10μm~數100μm。第2配線基板22與第1配線基板21對向而配置。 On the other hand, the second wiring board 22 includes a second base material 221 (see FIG. 2 ) and a plurality of second electrode lines (Y electrodes) 220 . Similarly to the first base material 211, the second base material 221 (second insulating layer) is made of, for example, a flexible sheet, and specifically, electrically insulating such as PET, PEN, PC, PMMA, or polyimide. The plastic sheet (film) and the like. The thickness of the second base material 221 is not particularly limited, and is, for example, several 10 μm to several 100 μm. The second wiring board 22 is disposed to face the first wiring board 21 .
複數條第2電極線220係與複數條第1電極線210同樣地構成。即,複數條第2電極線220一體地設置於第2基材221之一面,並沿著Y軸方向隔開特定間隔而排列,且沿著X軸方向呈大致直線狀形成。又,複數條第2電極線220分別可由單一之電極線構成,亦可由沿著Y軸方向排列之複數個電極群構成。 The plurality of second electrode lines 220 are configured in the same manner as the plurality of first electrode lines 210. In other words, the plurality of second electrode wires 220 are integrally provided on one surface of the second base material 221, and are arranged at a predetermined interval along the Y-axis direction, and are formed substantially linearly along the X-axis direction. Further, each of the plurality of second electrode lines 220 may be composed of a single electrode line, or may be composed of a plurality of electrode groups arranged along the Y-axis direction.
第2電極線220分別被引出至第2基材221之緣部等,且分別連接於不同之端子。構成各個電極群之複數條電極線可連接於共用之端子,亦可分成2個以上之不同之端子而連接。又,第2電極線220分別經由該等端子而電性連接於控制部60。 The second electrode wires 220 are respectively led out to the edge portions of the second base member 221 and the like, and are respectively connected to different terminals. The plurality of electrode lines constituting each electrode group may be connected to a common terminal, or may be connected to two or more different terminals. Further, the second electrode lines 220 are electrically connected to the control unit 60 via the terminals.
第1電極線210及第2電極線220可利用網版印刷、凹版膠印、或噴墨印刷等印刷法形成導電膏等,亦可利用使用有金屬箔或金屬層之光微影技術之圖案化方法而形成。又,藉由將第1及第2基材211、221均由具有可撓性之片材構成,而可使電極基板20之整體成為具有可撓性之構成。 The first electrode wire 210 and the second electrode wire 220 can be formed by a printing method such as screen printing, gravure offset printing, or inkjet printing, or can be patterned by photolithography using a metal foil or a metal layer. Formed by the method. Further, by forming the first and second base materials 211 and 221 from a flexible sheet material, the entire electrode substrate 20 can have a flexible structure.
如圖3所示,電極基板20包含將第1配線基板21與第2配線基板22相互接合之接著層23。接著層23具有電絕緣性,例如由接著劑之固化物、膠帶等黏著材料等構成。 As shown in FIG. 3, the electrode substrate 20 includes an adhesive layer 23 that bonds the first wiring substrate 21 and the second wiring substrate 22 to each other. Next, the layer 23 is electrically insulating, and is made of, for example, a cured material of an adhesive, an adhesive material such as a tape, or the like.
如上所述,於本實施形態之電極基板20中,複數條第1電極線 210與複數條第2電極線220於電極基板20之厚度方向(Z軸方向)上相隔而配置。因此,電極基板20係由分別形成於複數條第1電極線210與複數條第2電極線220之複數個對向區域之複數個檢測部20s(電容感測器)呈矩陣狀排列而成。複數個檢測部20s分別形成於複數條第1電極線210與複數條第2電極線220之交叉區域。 As described above, in the electrode substrate 20 of the present embodiment, the plurality of first electrode lines The 210 and the plurality of second electrode wires 220 are arranged apart from each other in the thickness direction (Z-axis direction) of the electrode substrate 20. Therefore, the electrode substrate 20 is formed by arranging a plurality of detecting portions 20s (capacitive sensors) formed in a plurality of opposing regions of the plurality of first electrode lines 210 and the plurality of second electrode lines 220 in a matrix. The plurality of detecting portions 20s are formed in intersections of the plurality of first electrode lines 210 and the plurality of second electrode lines 220, respectively.
於本實施形態中,複數條第1電極線210配置於較複數條第2電極線220靠操作構件10側,但並不限定於此,亦可將複數條第2電極線220配置於較複數條第1電極線210靠操作構件10側。 In the present embodiment, the plurality of first electrode lines 210 are disposed on the side of the operation member 10 of the plurality of second electrode lines 220. However, the plurality of second electrode lines 210 are not limited thereto, and the plurality of second electrode lines 220 may be disposed in plural numbers. The strip first electrode line 210 is on the side of the operation member 10.
控制部60電性連接於電極基板20。更詳細而言,控制部60經由端子而分別連接於複數條第1及第2電極線210、220各者。控制部60構成信號處理電路,該信號處理電路可基於複數個檢測部20s之輸出而產生關於對第1面110之輸入操作之資訊。控制部60一面以特定之週期掃描複數個檢測部20s之各者一面獲取各檢測部20s之電容變化量,並基於該電容變化量而產生關於輸入操作之資訊。 The control unit 60 is electrically connected to the electrode substrate 20 . More specifically, the control unit 60 is connected to each of the plurality of first and second electrode lines 210 and 220 via terminals. The control unit 60 constitutes a signal processing circuit that can generate information on an input operation to the first surface 110 based on the outputs of the plurality of detecting portions 20s. The control unit 60 acquires the capacitance change amount of each detection unit 20s while scanning each of the plurality of detection units 20s at a specific cycle, and generates information on the input operation based on the capacitance change amount.
典型而言,控制部60由包含CPU(Central Processing Unit,中央處理單元)/MPU(Micro Processor Unit,微處理機單元)、記憶體等之電腦構成。控制部60可由單一之晶片零件構成,亦可由複數個電路零件構成。控制部60可搭載於輸入裝置100,亦可搭載於組裝有輸入裝置100之電子機器70。於前者之情形時,例如,安裝於連接在電極基板20之可撓性配線基板上。於後者之情形時,亦可與控制電子機器70之控制器710一體地構成。 Typically, the control unit 60 is configured by a computer including a CPU (Central Processing Unit), an MPU (Micro Processor Unit), a memory, and the like. The control unit 60 may be composed of a single wafer component or a plurality of circuit components. The control unit 60 may be mounted on the input device 100 or may be mounted on the electronic device 70 in which the input device 100 is incorporated. In the case of the former, for example, it is mounted on a flexible wiring board connected to the electrode substrate 20. In the latter case, it can also be constructed integrally with the controller 710 of the control electronics 70.
如上所述,控制部60包含運算部61及信號產生部62,且根據儲存於未圖示之記憶部之程式執行各種功能。運算部61係基於自電極基板20之第1及第2電極線210、220之各者輸出之電信號(輸入信號)而算出第1面110上之XY座標系統中之操作位置,信號產生部62基於該結 果產生操作信號。藉此,可對可撓性顯示器11顯示基於在第1面110上之輸入操作之圖像。 As described above, the control unit 60 includes the calculation unit 61 and the signal generation unit 62, and executes various functions in accordance with a program stored in a memory unit (not shown). The calculation unit 61 calculates an operation position in the XY coordinate system on the first surface 110 based on an electric signal (input signal) output from each of the first and second electrode lines 210 and 220 of the electrode substrate 20, and a signal generation unit. 62 based on the knot An operational signal is generated. Thereby, an image based on the input operation on the first surface 110 can be displayed on the flexible display 11.
圖3、4所示之運算部61係基於來自分配有固有之XY座標之各檢測部20s之輸出而算出第1面110上之操作子之操作位置之XY座標。具體而言,運算部61係基於自各X電極(第1電極線210)、Y電極(第2電極線220)獲得之靜電電容之變化量而算出形成於各X電極、Y電極之交叉區域(對向區域)之各檢測部20s中之靜電電容之變化量。根據該各檢測部20s之靜電電容之變化量之比率等,可算出操作子之操作位置之XY座標。 The calculation unit 61 shown in FIGS. 3 and 4 calculates the XY coordinates of the operation position of the operator on the first surface 110 based on the output from each of the detection units 20s to which the unique XY coordinates are assigned. Specifically, the calculation unit 61 calculates an intersection region formed between each of the X electrodes and the Y electrodes based on the amount of change in electrostatic capacitance obtained from each of the X electrodes (first electrode line 210) and the Y electrode (second electrode line 220). The amount of change in electrostatic capacitance in each of the detecting portions 20s of the opposing region). The XY coordinates of the operating position of the operator can be calculated from the ratio of the amount of change in the electrostatic capacitance of each of the detecting portions 20s.
例如,運算部61係基於以特定之週期對第1及第2電極線210、220中之相當於驅動電極(E1)之電極線施加驅動信號時所得之來自相當於檢測電極(E2)之電極線之輸出,而獲取各檢測部20s之電容變化量。信號產生部62係基於運算部61之輸出(各檢測部20s之電容變化量),而產生關於對輸入操作面之輸入操作之資訊(控制信號)。 For example, the calculation unit 61 is based on an electrode corresponding to the detection electrode (E2) obtained by applying a drive signal to the electrode line corresponding to the drive electrode (E1) of the first and second electrode lines 210 and 220 at a specific cycle. The output of the line is obtained, and the amount of change in capacitance of each detecting portion 20s is obtained. The signal generation unit 62 generates information (control signal) regarding an input operation to the input operation surface based on the output of the calculation unit 61 (the amount of capacitance change of each detection unit 20s).
於本實施形態中,將第1電極線210設為驅動電極(E1),將第2電極線220設為檢測電極(E2)。由於驅動電極(E1)與檢測電極(E2)相比電位較穩定,故而較檢測電極(E2)而言不易受到電磁雜訊之影響。就此種觀點而言,第1電極線210亦具有作為保護第2電極線220免受電磁雜訊之影響之屏蔽層之功能。 In the present embodiment, the first electrode line 210 is the drive electrode (E1), and the second electrode line 220 is the detection electrode (E2). Since the driving electrode (E1) has a relatively stable potential compared with the detecting electrode (E2), it is less susceptible to electromagnetic noise than the detecting electrode (E2). From this point of view, the first electrode line 210 also functions as a shield layer that protects the second electrode line 220 from electromagnetic noise.
又,運算部61可判定第1面110是否接受操作。具體而言,例如,於檢測部20s整體之靜電電容之變化量或各個檢測部20s之靜電電容之變化量等為特定之閾值以上之情形時,可判定為第1面110接受操作。又,藉由將該閾值設為2以上,例如可區別觸控操作與(意識性)按壓操作而進行判定。進而,亦可基於檢測部20s之靜電電容之變化量而算出按壓力。 Further, the calculation unit 61 can determine whether or not the first surface 110 accepts an operation. Specifically, for example, when the amount of change in electrostatic capacitance of the entire detecting unit 20s or the amount of change in electrostatic capacitance of each detecting unit 20s is equal to or greater than a specific threshold value, it can be determined that the first surface 110 is operated. Moreover, by setting the threshold to 2 or more, for example, it is possible to distinguish between a touch operation and an (ideal) pressing operation. Further, the pressing force can be calculated based on the amount of change in the electrostatic capacitance of the detecting portion 20s.
信號產生部62係基於運算部61之算出結果而產生特定之操作信 號。該操作信號亦可為例如用以產生對可撓性顯示器11輸出之顯示圖像之圖像控制信號、對應於顯示在可撓性顯示器11上之操作位置之鍵盤圖像之鍵之操作信號、或關於對應於GUI(Graphical User Interface)之操作的操作信號等。 The signal generation unit 62 generates a specific operation letter based on the calculation result of the calculation unit 61. number. The operation signal may also be, for example, an image control signal for generating a display image outputted to the flexible display 11, an operation signal corresponding to a key of a keyboard image displayed at an operation position on the flexible display 11, Or an operation signal or the like corresponding to an operation of a GUI (Graphical User Interface).
此處,輸入裝置100中,作為藉由於第1面110上之操作而使金屬膜12及導體層50之各者與電極基板20(檢測部20s)之距離產生變化之構成,包含第1及第2支持體30、40。以下,對第1及第2支持體30、40進行說明。 Here, in the input device 100, the distance between each of the metal film 12 and the conductor layer 50 and the electrode substrate 20 (detection portion 20s) is changed by the operation on the first surface 110, and includes the first and The second support bodies 30 and 40. Hereinafter, the first and second supports 30 and 40 will be described.
第1支持體30配置於操作構件10與電極基板20之間。第1支持體30包含複數個第1構造體310、第1殼體320、及第1空間部330。本實施形態中,第1支持體30經由接著層35而接合於電極基板20上(參照圖3)。接著層35可為接著劑,亦可由黏著劑、膠帶等黏著材料構成。 The first support 30 is disposed between the operation member 10 and the electrode substrate 20 . The first support body 30 includes a plurality of first structures 310, a first case 320, and a first space portion 330. In the present embodiment, the first support 30 is bonded to the electrode substrate 20 via the adhesive layer 35 (see FIG. 3). The layer 35 may be an adhesive or may be composed of an adhesive such as an adhesive or a tape.
如圖3所示,本實施形態之第1支持體30具有基材31、設置於基材31之表面(上表面)之構造層32、及形成於構造層32上之特定位置之複數個接合部341之積層構造。基材31由PET、PEN、PC等電絕緣性之塑膠片材構成。基材31之厚度並無特別限定,例如為數μm~數100μm。 As shown in FIG. 3, the first support 30 of the present embodiment has a base material 31, a structural layer 32 provided on the surface (upper surface) of the base material 31, and a plurality of joints formed at specific positions on the structural layer 32. The layered structure of the portion 341. The base material 31 is made of an electrically insulating plastic sheet such as PET, PEN or PC. The thickness of the base material 31 is not particularly limited, and is, for example, several μm to several 100 μm.
構造層32由UV(Ultraviolet,紫外線)樹脂等電絕緣性之樹脂材料構成,且於基材31上形成複數個第1凸部321、第2凸部322及凹部323。各個第1凸部321具有例如於Z軸方向上突出之圓柱狀、角柱狀、錐台形狀等形狀,並以特定間隔排列於基材31上。第2凸部322係以包圍基材31之周圍之方式而以特定之寬度形成。 The structural layer 32 is made of an electrically insulating resin material such as UV (Ultraviolet) resin, and a plurality of first convex portions 321 , second convex portions 322 , and concave portions 323 are formed on the base material 31 . Each of the first convex portions 321 has a shape such as a columnar shape, a columnar shape, or a frustum shape that protrudes in the Z-axis direction, and is arranged on the base material 31 at a predetermined interval. The second convex portion 322 is formed to have a specific width so as to surround the periphery of the base material 31.
又,構造層32雖由具有可藉由於第1面110上之輸入操作而使電極基板20變形之程度之剛性的材料構成,但亦可由在輸入操作時可與操作構件10一併變形之彈性材料構成。即,構造層32之彈性模數並無特 別限定,可於能夠獲得目標之操作感或檢測感度之範圍內適當選擇。 Further, although the structural layer 32 is made of a material having rigidity which can be deformed by the input operation on the first surface 110 to the extent that the electrode substrate 20 is deformed, it may be elastically deformable together with the operating member 10 at the time of input operation. Material composition. That is, the elastic modulus of the structural layer 32 is not particularly It is not limited, and can be appropriately selected within a range in which the operational feeling of the target or the detection sensitivity can be obtained.
凹部323由形成於第1及第2凸部321、322間之平坦面構成。即,凹部323上之空間區域構成第1空間部330。又,本實施形態中,於凹部323上形成由黏著性較低之UV樹脂等形成之接著防止層342(圖3中未圖示)。接著防止層342之形狀並無特別限定,可形成為島狀,亦可於凹部323上由平坦膜形成。 The concave portion 323 is formed of a flat surface formed between the first and second convex portions 321 and 322. That is, the space region on the concave portion 323 constitutes the first space portion 330. Further, in the present embodiment, the adhesion preventing layer 342 (not shown in FIG. 3) formed of a UV resin having a low adhesiveness or the like is formed on the concave portion 323. The shape of the prevention layer 342 is not particularly limited, and may be formed in an island shape or may be formed of a flat film on the concave portion 323.
進而,於第1及第2凸部321、322之各者上形成由黏著性之樹脂材料等構成之接合部341。即,各個第1構造體310由第1凸部321與形成於第1凸部321上之接合部341之積層體構成,各個第1殼體320由第2凸部322與形成於第2凸部322上之接合部341之積層體構成。藉此,第1構造體310及第1殼體320之厚度(高度)構成為大致相同,於本實施形態中,例如為數μm~數100μm之範圍。再者,接著防止層342之高度只要低於第1構造體310及第1殼體320之高度,則無特別限定,例如以變得較第1及第2凸部321、322低之方式形成。 Further, a joint portion 341 made of an adhesive resin material or the like is formed on each of the first and second convex portions 321 and 322. In other words, each of the first structures 310 is composed of a laminate of the first protrusions 321 and the joints 341 formed on the first protrusions 321 , and each of the first housings 320 is formed by the second protrusions 322 and the second protrusions 322 . The laminated body 341 on the portion 322 is formed of a laminate. Thereby, the thickness (height) of the first structure body 310 and the first case body 320 is substantially the same, and in the present embodiment, for example, it is in the range of several μm to several hundred μm. In addition, the height of the prevention layer 342 is not particularly limited as long as it is lower than the height of the first structure body 310 and the first case body 320, and is formed to be lower than the first and second convex portions 321 and 322, for example. .
複數個第1構造體310係對應於各個檢測部20s之配置而配置。於本實施形態中,複數個第1構造體310例如係於Z軸方向上與複數個檢測部20s之各者之中心對向而配置,但並不限定於此,亦可配置於相對於各檢測部20s之中心偏移之位置。又,與各檢測部20s對向之構造體310之數量並不限定於1個,亦可為複數個。 The plurality of first structures 310 are arranged corresponding to the arrangement of the respective detecting units 20s. In the present embodiment, the plurality of first structures 310 are disposed to face the center of each of the plurality of detecting portions 20s in the Z-axis direction, for example, but the present invention is not limited thereto, and may be disposed in relation to each of the plurality of first structures 310. The position of the center offset of the detecting portion 20s. Further, the number of the structures 310 opposed to the respective detecting units 20s is not limited to one, and may be plural.
第1殼體320係以沿著電極基板20之周緣而包圍第1支持體30之周圍之方式形成。第1殼體320之短邊方向之長度即寬度只要可充分確保第1支持體30及輸入裝置100整體之強度,則無特別限定。 The first case 320 is formed to surround the periphery of the first support 30 along the circumference of the electrode substrate 20 . The length of the first casing 320 in the short-side direction, that is, the width, is not particularly limited as long as the strength of the first support body 30 and the input device 100 as a whole can be sufficiently ensured.
另一方面,第2支持體40配置於電極基板20與導體層50之間。第2支持體40包含複數個第2構造體410、第2殼體420及第2空間部430。 On the other hand, the second support 40 is disposed between the electrode substrate 20 and the conductor layer 50. The second support 40 includes a plurality of second structures 410 , a second case 420 , and a second space unit 430 .
如圖3所示,本實施形態之第2支持體40係於導體層50上直接形成第2構造體410及第2殼體420。第2構造體410及第2殼體420例如由具 有黏著性之絕緣性之樹脂材料構成,亦兼具接合導體層50與電極基板20間之接合部之功能。第2構造體410及第2殼體420之厚度並無特別限定,例如為數μm~數100μm。 As shown in FIG. 3, in the second support 40 of the present embodiment, the second structure 410 and the second case 420 are directly formed on the conductor layer 50. The second structure body 410 and the second case body 420 are, for example, It is composed of an adhesive insulating resin material and also functions as a joint between the conductor layer 50 and the electrode substrate 20. The thickness of the second structure 410 and the second case 420 is not particularly limited, and is, for example, several μm to several 100 μm.
第2構造體410分別配置於相鄰之第1構造體310間。即,第2構造體410分別配置於相鄰之檢測部20s間。並不限定於此,第2構造體410亦能夠以與各檢測部20s對向之方式配置。 The second structures 410 are disposed between the adjacent first structures 310, respectively. In other words, the second structures 410 are disposed between the adjacent detecting portions 20s. The second structure 410 is not limited to this, and the second structure 410 can be disposed to face each of the detecting units 20s.
第2殼體420係以沿著導體層50之周緣而包圍第2支持體40之周圍之方式形成。第2殼體420之寬度只要可充分確保第2支持體40及輸入裝置100整體之強度,則無特別限定,例如以與第1殼體320大致相同之寬度構成。 The second case 420 is formed to surround the periphery of the second support 40 along the circumference of the conductor layer 50. The width of the second case 420 is not particularly limited as long as the strength of the second support 40 and the input device 100 as a whole is sufficiently ensured, and is configured to have substantially the same width as the first case 320.
又,第2構造體410與構成第1構造體310之構造層32同樣地其彈性模數並無特別限定。即,可於能夠獲得目標之操作感或檢測感度之範圍內適當選擇,亦可由在輸入操作時能夠與電極基板20一併變形之彈性材料構成。 Further, the second structural body 410 is not particularly limited in its modulus of elasticity as in the structural layer 32 constituting the first structural body 310. In other words, it can be appropriately selected within a range in which the operational feeling or the detection sensitivity of the target can be obtained, or can be formed of an elastic material that can be deformed together with the electrode substrate 20 at the time of the input operation.
又,第2空間部430形成於第2構造體410間,而構成第2構造體410及第2殼體420之周圍之空間區域。於本實施形態中,自Z軸方向觀察時,第2空間部430收容各檢測部20s及各第1構造體310。 Further, the second space portion 430 is formed between the second structures 410 and constitutes a space region around the second structures 410 and the second casing 420. In the present embodiment, the second space portion 430 accommodates each of the detecting portions 20s and each of the first structures 310 when viewed in the Z-axis direction.
如上所述,本實施形態之第1及第2支持體30、40:(1)包括第1及第2構造體310、410與第1及第2空間部330、430;(2)自Z軸方向觀察時,第1構造體310與第2構造體410不重疊,第1構造體310配置於第2空間部430上。 As described above, the first and second supports 30 and 40 of the present embodiment include (1) the first and second structures 310 and 410 and the first and second space portions 330 and 430, and (2) from Z. When the axial direction is observed, the first structural body 310 and the second structural body 410 do not overlap each other, and the first structural body 310 is disposed on the second space portion 430.
因此,如以下所示,即便藉由操作時之數十g左右之微小按壓力,亦可使金屬膜12及導體層50變形。 Therefore, as will be described later, the metal film 12 and the conductor layer 50 can be deformed by a slight pressing force of about several tens of g at the time of operation.
圖5係表示利用操作子h將第1面110上之點P向Z軸方向下方按壓時之對第1及第2構造體310、410附加之力之情況的概略剖面圖。圖中 之中空箭頭模式性地表示向Z軸方向下方(以下,簡稱為「下方」)按壓之力的大小。圖14中未示出金屬膜12及電極基板20等之撓曲、以及第1及第2構造體310、410之彈性變形等態樣。再者,於以下之說明中,即便於使用者進行無意識地按壓之觸控操作之情形時,實際上亦會附加微小之按壓力,故而將該等輸入操作總括為「按壓」進行說明。 FIG. 5 is a schematic cross-sectional view showing a state in which the force applied to the first and second structures 310 and 410 when the point P on the first surface 110 is pressed downward in the Z-axis direction by the operator h. In the picture The hollow arrow schematically indicates the magnitude of the force pressed downward in the Z-axis direction (hereinafter, simply referred to as "lower"). The deflection of the metal film 12, the electrode substrate 20, and the like, and the elastic deformation of the first and second structures 310 and 410 are not shown in FIG. Furthermore, in the following description, even when the user performs a touch operation that is unintentionally pressed, a slight pressing force is actually added, so that the input operations are collectively referred to as "pressing".
例如,於利用力F將第1空間部330p0上之點P向下方按壓之情形時,點P之正下方之金屬膜12向下方撓曲。隨之,鄰接於第1空間部330p0之第1構造體310p1、310p2受到力F1,於Z軸方向上彈性變形而厚度略微減少。又,由於金屬膜12之撓曲,鄰接於第1構造體310p1、310p2之第1構造體310p3、310p4亦受到小於F1之力F2。進而,藉由力F1、F2而亦對電極基板20施加力,從而使第1構造體310p1、310p2正下方之區域於中心向下方撓曲。藉此,配置於第1構造體310p1、310p2間之第2構造體410p0受到力F3,於Z軸方向上彈性變形而厚度略微減少。又,配置於第1構造體310p1、310p3間之第2構造體410p1、及配置於第1構造體310p2、310p4間之第2構造體410p2亦分別受到小於F3之力F4。 For example, when the point P on the first space portion 330p0 is pressed downward by the force F, the metal film 12 directly under the point P is deflected downward. As a result, the first structures 310p1 and 310p2 adjacent to the first space portion 330p0 receive the force F1 and are elastically deformed in the Z-axis direction to have a slight decrease in thickness. Further, due to the deflection of the metal film 12, the first structures 310p3 and 310p4 adjacent to the first structures 310p1 and 310p2 also receive a force F2 smaller than F1. Further, by applying a force to the electrode substrate 20 by the forces F1 and F2, the region immediately below the first structures 310p1 and 310p2 is deflected downward in the center. As a result, the second structure 410p0 disposed between the first structures 310p1 and 310p2 receives the force F3 and is elastically deformed in the Z-axis direction to have a slight decrease in thickness. Further, the second structure 410p1 disposed between the first structures 310p1 and 310p3 and the second structure 410p2 disposed between the first structures 310p2 and 310p4 also receive a force F4 smaller than F3.
如此,可藉由第1及第2構造體310、410而於厚度方向上傳遞力,可使電極基板20易於變形。又,藉由金屬膜12及電極基板20之撓曲,並於面內方向(與X軸方向及Y軸方向平行之方向)上受到按壓力之影響,而力不僅可影響到操作子h之正下方之區域,亦可影響到其附近之第1及第2構造體310、410。 In this manner, the force can be transmitted in the thickness direction by the first and second structures 310 and 410, and the electrode substrate 20 can be easily deformed. Moreover, the deflection of the metal film 12 and the electrode substrate 20 is affected by the pressing force in the in-plane direction (the direction parallel to the X-axis direction and the Y-axis direction), and the force can affect not only the operation sub-h The area immediately below can also affect the first and second structures 310 and 410 in the vicinity thereof.
又,關於上述(1),可藉由第1及第2空間部330、430而使金屬膜12及電極基板20易於變形。進而,可藉由以柱體等構成之第1及第2構造體310、410而使電極基板20受到較操作子h之按壓力高之壓力,而可使電極基板20有效率地撓曲。 Further, in the above (1), the metal film 12 and the electrode substrate 20 can be easily deformed by the first and second space portions 330 and 430. Further, the electrode substrate 20 can be flexibly deflected by the pressure higher than the pressing force of the operator h by the first and second structures 310 and 410 formed of a column or the like.
進而,關於上述(2),由於第1及第2構造體310、410自Z軸方向觀察時不重疊地配置,故而第1構造體310可隔著其下之第2空間部430而使電極基板20易於撓曲。 Further, in the above (2), since the first and second structures 310 and 410 are arranged so as not to overlap each other when viewed in the Z-axis direction, the first structure 310 can be connected to the second space 430 below the electrode. The substrate 20 is easily deflected.
以下表示具體操作時之檢測部20s之靜電電容之變化量的一例。 An example of the amount of change in the electrostatic capacitance of the detecting portion 20s at the time of the specific operation will be described below.
圖15A、B係表示第1面110受到操作子h之操作時之輸入裝置100之態樣的模式性主要部分剖面圖、及表示此時自檢測部20s輸出之輸出信號之一例的圖。圖15A、B中之沿著X軸而表示之柱形圖模式性地表示各檢測部20s中之靜電電容自基準值之變化量。又,圖15A係表示操作子h按壓第1構造體310(310a2)上時之態樣,圖15B係表示操作子h按壓第1空間部330(330b1)上時之態樣。 15A and FIG. 15B are schematic main cross-sectional views showing an aspect of the input device 100 when the first surface 110 is operated by the operation sub-h, and an example of an output signal outputted from the detection unit 20s at this time. The histograms shown along the X-axis in FIGS. 15A and 15B schematically show the amount of change in capacitance from the reference value in each detecting unit 20s. In addition, FIG. 15A shows a state in which the operator h is pressed against the first structure body 310 (310a2), and FIG. 15B shows a state in which the operator h is pressed against the first space portion 330 (330b1).
於圖15A中,操作位置之正下方之第1構造體310a2最受力,第1構造體310a2本身發生彈性變形,並且向下方移位。因該移位而使第1構造體310a2正下方之檢測部20sa2向下方移位。藉此,檢測部20sa2與導體層50介隔第2空間部430a2而接近。即,藉由檢測部20sa2與金屬膜12之距離發生稍微變化,且與導體層50之距離發生較大變化,而獲得靜電電容之變化量Ca2。另一方面,由於金屬膜12之撓曲之影響,第1構造體310a1、310a3亦略微向下方移位,檢測部20sa1、20sa3中之靜電電容之變化量分別成為Ca1、Ca3。 In FIG. 15A, the first structure body 310a2 directly under the operation position is most stressed, and the first structure body 310a2 itself is elastically deformed and displaced downward. The detection unit 20sa2 directly below the first structure body 310a2 is displaced downward by the displacement. Thereby, the detecting portion 20sa2 and the conductor layer 50 are close to each other via the second space portion 430a2. In other words, the distance between the detecting portion 20sa2 and the metal film 12 slightly changes, and the distance from the conductor layer 50 largely changes, thereby obtaining the amount of change Ca2 in the electrostatic capacitance. On the other hand, the first structures 310a1 and 310a3 are slightly displaced downward by the influence of the deflection of the metal film 12, and the amounts of change in the capacitances in the detecting portions 20sa1 and 20sa3 are Ca1 and Ca3, respectively.
於圖15A所示之例中,Ca2最大,Ca1與Ca3大致相同,且小於Ca2。即,如圖15A所示,靜電電容之變化量Ca1、Ca2、Ca3表示以Ca2為頂點之山形之分佈。於此情形時,運算部61可基於Ca1、Ca2、Ca3之比率而算出重心等,且算出檢測部20sa2上之XY座標作為操作位置。 In the example shown in Fig. 15A, Ca2 is the largest, and Ca1 and Ca3 are substantially the same and smaller than Ca2. That is, as shown in FIG. 15A, the amounts of change Ca1, Ca2, and Ca3 of the capacitance indicate the distribution of the mountain shape with the apex of Ca2. In this case, the calculation unit 61 can calculate the center of gravity or the like based on the ratio of Ca1, Ca2, and Ca3, and calculate the XY coordinates on the detection unit 20sa2 as the operation position.
另一方面,於圖15B中,由於金屬膜12之撓曲而使操作位置附近之第1構造體310b1、310b2略微地彈性變形,並且向下方移位。藉由 該移位而使電極基板20撓曲,並使第1構造體310b1、310b2正下方之檢測部20sb1、20sb2向下方移位。藉此,檢測部20sb1、20sb2與導體層50介隔第2空間部430b1、430b2而接近。即,藉由檢測部20sb1、20sb2與金屬膜12之距離略微地變化,且與導體層50之距離相對較大地變化,而分別獲得靜電電容之變化量Cb1、Cb2。 On the other hand, in FIG. 15B, the first structures 310b1 and 310b2 in the vicinity of the operation position are slightly elastically deformed by the deflection of the metal film 12, and are displaced downward. By This displacement causes the electrode substrate 20 to be deflected, and the detection portions 20sb1 and 20sb2 directly below the first structures 310b1 and 310b2 are displaced downward. Thereby, the detecting portions 20sb1 and 20sb2 are close to the conductor layer 50 via the second space portions 430b1 and 430b2. In other words, the distance between the detecting portions 20sb1 and 20sb2 and the metal film 12 is slightly changed, and the distance from the conductor layer 50 is relatively changed, and the amounts of change Cb1 and Cb2 of the capacitance are obtained, respectively.
於圖15B所示之例中,Cb1與Cb2大致相同。藉此,運算部61可算出檢測部20sb1、20sb2間之XY座標作為操作位置。 In the example shown in Fig. 15B, Cb1 and Cb2 are substantially the same. Thereby, the calculation unit 61 can calculate the XY coordinates between the detection units 20sb1 and 20sb2 as the operation positions.
如此,根據本實施形態,由於檢測部20s及金屬膜12與檢測部20s及導體層50之厚度均因按壓力而可變,故而可進一步增大檢測部20s中之靜電電容之變化量。藉此,可提高輸入操作之檢測感度。 As described above, according to the present embodiment, since the thicknesses of the detecting portion 20s and the metal film 12, the detecting portion 20s, and the conductor layer 50 are both variable by the pressing force, the amount of change in the electrostatic capacitance in the detecting portion 20s can be further increased. Thereby, the detection sensitivity of the input operation can be improved.
又,即便可撓性顯示器11上之操作位置為第1構造體310上、第1空間部330上之任一點,亦可算出操作位置之XY座標。即,藉由使金屬膜12於面內方向上受到按壓力之影響,不僅使操作位置正下方之檢測部20s發生靜電電容變化,亦可使自Z軸方向觀察時為操作位置附近之檢測部20s發生靜電電容變化。藉此,可抑制第1面110內之檢測精度之不均,維持整個第1面110上之較高之檢測精度。 Further, even if the operation position on the flexible display 11 is any point on the first structure body 310 or the first space portion 330, the XY coordinates of the operation position can be calculated. In other words, when the metal film 12 is subjected to the pressing force in the in-plane direction, not only the capacitance of the detecting portion 20s directly below the operation position is changed, but also the detecting portion near the operating position when viewed from the Z-axis direction. The electrostatic capacitance changes in 20s. Thereby, unevenness in detection accuracy in the first surface 110 can be suppressed, and high detection accuracy on the entire first surface 110 can be maintained.
此外,構成操作構件10之可撓性顯示器11如上所述般被控制器710驅動控制。可撓性顯示器11典型而言係於面內藉由控制呈矩陣狀排列之複數個像素之發光而顯示圖像。此時,有如下情形:自驅動各像素之像素電路產生對感測裝置1而言無法忽視之級別之電磁雜訊。 Further, the flexible display 11 constituting the operating member 10 is driven and controlled by the controller 710 as described above. The flexible display 11 typically displays an image in-plane by controlling the illumination of a plurality of pixels arranged in a matrix. At this time, there is a case where the pixel circuit that drives each pixel generates electromagnetic noise of a level that cannot be ignored by the sensing device 1.
如上所述,感測裝置1係以如下方式構成:依據基於相對於金屬膜12及導體層50之對向距離之變化之檢測部20s之靜電電容之變化,而檢測對輸入操作面(第1面110)之操作位置及操作量(按壓力)。因此,若電磁雜訊侵入檢測部20s,則檢測部20s之電容變化量之檢測精度降低,並且該電容變化量越微小該問題越顯著。 As described above, the sensing device 1 is configured to detect the input operation surface in accordance with the change in the electrostatic capacitance of the detecting portion 20s based on the change in the opposing distance with respect to the metal film 12 and the conductor layer 50 (1st) The operating position and the amount of operation (pressure) of the surface 110). Therefore, when the electromagnetic noise is intruded into the detecting unit 20s, the detection accuracy of the capacitance change amount of the detecting unit 20s is lowered, and the smaller the capacitance change amount, the more remarkable the problem.
另一方面,可藉由配置於各檢測部20s與可撓性顯示器11間之金屬膜12而確保一定之遮罩功能。然而,由於該金屬膜12必須以能夠追隨對輸入操作面(第1面110)之輸入操作而變形之厚度形成,故而未必可確保能夠遮蔽電磁雜訊之程度之厚度。如此,靜電檢測輸入操作之輸入裝置必須為如下構造:於謀求檢測精度之提高時,能夠充分保護檢測部20s免受電磁雜訊影響。 On the other hand, a certain mask function can be ensured by the metal film 12 disposed between each of the detecting portions 20s and the flexible display 11. However, since the metal film 12 must be formed to have a thickness that can be deformed following the input operation to the input operation surface (the first surface 110), the thickness of the electromagnetic noise can be surely prevented. As described above, the input device for the electrostatic detection input operation must have a structure that can sufficiently protect the detecting portion 20s from electromagnetic noise when the detection accuracy is improved.
因此,本實施形態之感測裝置1包括用以電磁性地遮蔽構成檢測部20s之電極線免受雜訊源影響之屏蔽層S1。如圖2及圖3所示,屏蔽層S1設置於電極基板20。 Therefore, the sensing device 1 of the present embodiment includes the shield layer S1 for electromagnetically shielding the electrode lines constituting the detecting portion 20s from the noise source. As shown in FIGS. 2 and 3, the shield layer S1 is provided on the electrode substrate 20.
屏蔽層S1由設置於支持複數條第1電極線210之第1基材211之導體膜構成。於本實施形態中,屏蔽層S1設置於第1基材211上與複數條第1電極線210同一平面上。藉此,可不另行設置支持屏蔽層S1之構件而形成屏蔽層S1。進而,由於屏蔽層S1係由與複數條第1電極線210相同之材料構成,故而可利用同一步驟形成第1電極線與屏蔽層S1。 The shield layer S1 is composed of a conductor film provided on the first base material 211 supporting the plurality of first electrode lines 210. In the present embodiment, the shield layer S1 is provided on the first substrate 211 on the same plane as the plurality of first electrode lines 210. Thereby, the shield layer S1 can be formed without separately providing a member that supports the shield layer S1. Further, since the shield layer S1 is made of the same material as the plurality of first electrode lines 210, the first electrode line and the shield layer S1 can be formed by the same procedure.
圖7係電極基板20之主要部分俯視圖,圖8係第1配線基板21之主要部分俯視圖,圖9係第2配線基板22之主要部分俯視圖。 7 is a plan view of a main portion of the electrode substrate 20, FIG. 8 is a plan view of a main portion of the first wiring substrate 21, and FIG. 9 is a plan view of a main portion of the second wiring substrate 22.
圖示之例中,第1及第2電極線210、220分別由包含複數條電極細線之電極線群構成,但當然並不限定於此,亦可分別由單一之寬幅之電極線構成。 In the illustrated example, the first and second electrode lines 210 and 220 are each composed of an electrode line group including a plurality of electrode thin lines. However, the present invention is not limited thereto, and may be composed of a single wide electrode line.
本實施形態中,屏蔽層S1包含配置於複數條第1電極線210之各者間之複數條電極線S11(第3電極線)。複數條電極線S11與第1電極線210空出特定之間隙而排列。複數條電極線S11以分別相同之寬度形成,各電極線S11之長度以與第1電極線210之長度大致相等之長度形成。複數條電極線S11分別與金屬膜12及導體層50同樣地連接於特定之基準電位(例如接地電位)。 In the present embodiment, the shield layer S1 includes a plurality of electrode lines S11 (third electrode lines) disposed between each of the plurality of first electrode lines 210. The plurality of electrode lines S11 and the first electrode lines 210 are arranged with a specific gap therebetween. The plurality of electrode lines S11 are formed to have the same width, and the length of each of the electrode lines S11 is formed to be substantially equal to the length of the first electrode line 210. The plurality of electrode lines S11 are connected to a specific reference potential (for example, a ground potential) in the same manner as the metal film 12 and the conductor layer 50, respectively.
根據上述構成,複數條第2電極線220於自可撓性顯示器11觀察 時,藉由屏蔽層S1(電極線S11)而遮蔽連接複數個檢測部20s(第1電極線210與第2電極線220之對向區域)間之配線區域220b。藉此,上述配線區域220b自可撓性顯示器11被電磁性地遮蔽。 According to the above configuration, the plurality of second electrode lines 220 are observed from the flexible display 11 At this time, the wiring region 220b between the plurality of detecting portions 20s (opposing regions of the first electrode wires 210 and the second electrode wires 220) is shielded by the shield layer S1 (electrode wires S11). Thereby, the wiring region 220b is electromagnetically shielded from the flexible display 11.
各電極線S11可利用網版印刷、凹版膠印、或噴墨印刷等印刷法而形成導電膏等,亦可利用使用金屬箔、金屬層或ITO等透明導電膜之材料、碳材料等導體材料之光微影技術之圖案化方法而形成。各電極線S11之厚度並無特別限定,典型而言,以與第1電極線210相等之厚度(例如數10nm~數10μm)形成。 Each of the electrode wires S11 can be formed into a conductive paste by a printing method such as screen printing, gravure offset printing, or inkjet printing, or a material such as a metal foil, a metal layer or a transparent conductive film such as ITO, or a conductor material such as a carbon material can be used. Formed by a patterning method of photolithography. The thickness of each electrode wire S11 is not particularly limited, and is typically formed to have a thickness equal to that of the first electrode wire 210 (for example, 10 nm to 10 μm).
各電極線S11並不限定於利用與第1電極線210同一步驟而形成之例。又,各電極線S11可由與第1電極線210不同之材料構成,亦可以較第1電極線210之厚度厚之厚度形成。 Each electrode line S11 is not limited to the example formed by the same step as the first electrode line 210. Further, each of the electrode lines S11 may be made of a material different from the first electrode line 210, or may be formed thicker than the thickness of the first electrode line 210.
上述配線區域220b被屏蔽層S1遮蔽之區域係利用構成屏蔽層S1之各電極線S11之寬度而調整。由於屏蔽層S1形成於與第1電極線210同一平面上,故而上述配線區域220b之一部分區域被屏蔽層S1遮蔽。 The area in which the wiring region 220b is shielded by the shield layer S1 is adjusted by the width of each electrode line S11 constituting the shield layer S1. Since the shield layer S1 is formed on the same plane as the first electrode line 210, a part of the wiring region 220b is shielded by the shield layer S1.
為了使上述配線區域220b之全部區域被屏蔽層S1遮蔽,例如,只要另外形成被覆第1電極線210之絕緣膜,並於該絕緣膜上設置屏蔽層即可。此時,亦能夠以藉由該屏蔽層亦被覆連接複數個檢測部20s間之第1電極線210之配線區域之至少一部分之方式構成。於此情形時,該屏蔽層亦可由在與複數個檢測部20s對向之區域成為開口之格子狀之導體膜構成。 In order to shield the entire area of the wiring region 220b by the shield layer S1, for example, an insulating film covering the first electrode line 210 may be separately formed, and a shield layer may be provided on the insulating film. At this time, it is also possible to cover at least a part of the wiring region of the first electrode line 210 between the plurality of detecting portions 20s by the shield layer. In this case, the shield layer may be formed of a grid-shaped conductor film that is opened in a region opposed to the plurality of detecting portions 20s.
圖10A係概略性地表示第1配線基板21之整體之俯視圖。屏蔽層S1進而包含將複數條電極線S11相互連接之配線部S12。配線部S12於第1配線基板21之一長邊側之緣部21a分別與複數條電極線S11連接。配線部S12經由第1配線基板21之一側之短邊側之緣部21b被向另一側之長邊側之緣部21c牽引。於緣部21c形成與配線部S12連接之引出線S12a,且經由控制部60連接於特定之基準電位(接地電位)。藉此,可 將配置於複數條第1電極線210間之複數條電極線S11共同地連接於接地電位。 FIG. 10A is a plan view schematically showing the entire first wiring board 21. The shield layer S1 further includes a wiring portion S12 that connects the plurality of electrode lines S11 to each other. The wiring portion S12 is connected to the plurality of electrode lines S11 on the edge portion 21a on the long side of one of the first wiring boards 21. The wiring portion S12 is pulled to the edge portion 21c on the other long side of the other side via the edge portion 21b on the short side of the one side of the first wiring substrate 21. A lead line S12a connected to the wiring portion S12 is formed in the edge portion 21c, and is connected to a specific reference potential (ground potential) via the control portion 60. By this, The plurality of electrode lines S11 disposed between the plurality of first electrode lines 210 are commonly connected to the ground potential.
於第1配線基板21之緣部21c進而形成與複數條第1電極線210之各者連接之引出線210a,經由該等引出線210a而將各第1電極線210連接於控制部60。 Further, a lead line 210a connected to each of the plurality of first electrode lines 210 is formed on the edge portion 21c of the first wiring board 21, and each of the first electrode lines 210 is connected to the control unit 60 via the lead lines 210a.
雖未圖示,但第2配線基板22設有與複數條第2電極線220之各者連接之引出線,該等引出線典型而言形成於第2配線基板22之一短邊側之緣部。因此,為了被覆該等第2電極線220之引出線(於形成有複數個檢測部20s之檢測區域之外側形成之外周配線部)之至少一部分而使其免受電磁雜訊影響,而可如圖10B所示般由設置於第1配線基板21之屏蔽層S遮蔽該引出線。 Although not shown, the second wiring board 22 is provided with lead lines that are connected to each of the plurality of second electrode lines 220, and the lead lines are typically formed on the short side of one of the second wiring boards 22. unit. Therefore, in order to cover at least a part of the lead wires of the second electrode wires 220 (the outer peripheral wiring portions are formed on the outer side of the detection region in which the plurality of detecting portions 20s are formed), it is protected from electromagnetic noise. As shown in FIG. 10B, the lead line is shielded by the shield layer S provided on the first wiring substrate 21.
圖10B係表示屏蔽層S1之構成之變化例之第1配線基板的俯視圖。該屏蔽層S1進而包含形成於第1配線基板21之緣部21b之帶狀部S11b。帶狀部S11b連接於配線部S12與引出線S12a間,且立體狀地被覆複數條第1電極線210中之位於最靠緣部21b側之電極線210b與該緣部間之區域。藉此,可保護位於帶狀部S11b之正下方之第2電極線220之外周配線部免受電磁雜訊影響。 FIG. 10B is a plan view showing a first wiring board showing a variation of the configuration of the shield layer S1. The shield layer S1 further includes a strip portion S11b formed on the edge portion 21b of the first wiring substrate 21. The strip portion S11b is connected between the wiring portion S12 and the lead line S12a, and is three-dimensionally covered with a region between the electrode line 210b on the side closest to the edge portion 21b of the plurality of first electrode lines 210 and the edge portion. Thereby, the outer peripheral wiring portion of the second electrode line 220 located directly under the strip portion S11b can be protected from electromagnetic noise.
此處,作為對感測裝置1之檢測感度造成影響之機器之一,可列舉可撓性顯示器11。假設,於將金屬膜12、導體層50及屏蔽層S1僅連接於控制部60之情形時,可撓性顯示器11有可能對控制部60之接地電位造成影響,而有可能無法充分發揮電磁遮罩效果。因此,藉由於連接可撓性顯示器11之控制器710之接地連接金屬膜12、導體層50及屏蔽層S1,而可維持為更穩定之接地電位,並可使電磁遮罩效果提昇。進而,即便藉由以更多之接點連接金屬膜12、導體層50及屏蔽層S1,亦可使電磁遮罩效果提昇。 Here, as one of the devices that affect the detection sensitivity of the sensing device 1, a flexible display 11 can be cited. When the metal film 12, the conductor layer 50, and the shield layer S1 are connected only to the control unit 60, the flexible display 11 may affect the ground potential of the control unit 60, and the electromagnetic shielding may not be sufficiently exhibited. Cover effect. Therefore, by connecting the metal film 12, the conductor layer 50, and the shield layer S1 to the ground of the controller 710 connected to the flexible display 11, the ground potential can be maintained more stably, and the electromagnetic shielding effect can be improved. Further, even if the metal film 12, the conductor layer 50, and the shield layer S1 are connected by more contacts, the electromagnetic shielding effect can be improved.
繼而,對本技術之第2實施形態進行說明。 Next, a second embodiment of the present technology will be described.
於上述第1實施形態中,複數條第1電極線與複數條第2電極線於電極基板之厚度方向上相互隔開,且於該等各電極線之交叉區域構成複數個檢測部(電容感測器)。相對於此,本實施形態中,複數條第1電極線與複數條第2電極線於電極基板之面內相互隔開,且於該等各電極線之對向區域構成複數個檢測部(電容感測器)。 In the first embodiment, the plurality of first electrode lines and the plurality of second electrode lines are spaced apart from each other in the thickness direction of the electrode substrate, and a plurality of detecting portions are formed at intersections of the electrode lines (capacitive sense) Detector). On the other hand, in the present embodiment, the plurality of first electrode lines and the plurality of second electrode lines are spaced apart from each other in the surface of the electrode substrate, and a plurality of detecting portions (capacitors) are formed in the opposing regions of the electrode lines. Sensor).
圖11A係本技術之第2實施形態之輸入裝置100C之概略剖面圖,圖11B係將輸入裝置100C之主要部分放大而表示之剖面圖。本實施形態與第1實施形態之不同點在於:電極基板20C根據XY平面內之電容耦合之變化量而靜電檢測與金屬膜12及導體層50各者之距離之變化。即,Y電極220C包含與X電極210C於電極基板20C之面內方向上對向之對向部,且該對向部構成檢測部20Cs。 Fig. 11A is a schematic cross-sectional view of an input device 100C according to a second embodiment of the present technology, and Fig. 11B is a cross-sectional view showing an enlarged main portion of the input device 100C. The present embodiment is different from the first embodiment in that the electrode substrate 20C electrostatically detects a change in the distance from each of the metal film 12 and the conductor layer 50 in accordance with the amount of change in capacitive coupling in the XY plane. In other words, the Y electrode 220C includes an opposing portion that faces the X electrode 210C in the in-plane direction of the electrode substrate 20C, and the opposing portion constitutes the detecting portion 20Cs.
電極基板20C包含配置有複數條第1電極線(X電極)210C及複數條第2電極線(Y電極)220C之基材211C,該等複數個X電極210C及Y電極220C配置於同一平面上。 The electrode substrate 20C includes a substrate 211C in which a plurality of first electrode lines (X electrodes) 210C and a plurality of second electrode lines (Y electrodes) 220C are disposed, and the plurality of X electrodes 210C and Y electrodes 220C are disposed on the same plane. .
參照圖12A、B,對X電極(第1電極線)210C及Y電極(第2電極線)220C之構成之一例進行說明。此處表示如下之例:各X電極210C與各Y電極220C分別包含梳齒狀之複數個單位電極體(第1單位電極體)210m及複數個單位電極體(第2單位電極體)220m,且1個單位電極體210m與1個單位電極體220m形成各檢測部20Cs。 An example of the configuration of the X electrode (first electrode line) 210C and the Y electrode (second electrode line) 220C will be described with reference to FIGS. 12A and 12B. Here, an example is shown in which each of the X electrodes 210C and each of the Y electrodes 220C includes a plurality of unit electrode bodies (first unit electrode bodies) 210m having a comb shape and a plurality of unit electrode bodies (second unit electrode bodies) 220m. Each of the unit electrode bodies 210m and one unit electrode body 220m forms each of the detecting portions 20Cs.
如圖12A所示,X電極210C包含複數個單位電極體210m、電極線部210p及複數個連接部210z。電極線部210p於Y軸方向上延伸。複數個單位電極體210m以固定間隔配置於Y軸方向上。電極線部210p與單位電極體210m隔開特定間隔而配置,且兩者間藉由連接部210z而連接。 As shown in FIG. 12A, the X electrode 210C includes a plurality of unit electrode bodies 210m, electrode line portions 210p, and a plurality of connection portions 210z. The electrode line portion 210p extends in the Y-axis direction. The plurality of unit electrode bodies 210m are arranged at a fixed interval in the Y-axis direction. The electrode line portion 210p is disposed at a predetermined interval from the unit electrode body 210m, and is connected to each other by the connection portion 210z.
如上所述,單位電極體210m整體具有梳齒狀。具體而言,單位 電極體210m包含複數個輔助電極210w與連結部210y。複數個輔助電極210w於X軸方向上延伸。相鄰之輔助電極210w之間隔開特定之間隔。複數個輔助電極210w之一端連接於在X軸方向上延伸之連結部210y。 As described above, the unit electrode body 210m has a comb shape as a whole. Specifically, the unit The electrode body 210m includes a plurality of auxiliary electrodes 210w and a joint portion 210y. A plurality of auxiliary electrodes 210w extend in the X-axis direction. The adjacent auxiliary electrodes 210w are spaced apart by a specific interval. One end of the plurality of auxiliary electrodes 210w is connected to the joint portion 210y extending in the X-axis direction.
如圖12B所示,Y電極220C包括複數個單位電極體220m、電極線部220p及複數個連接部220z。電極線部220p於X軸方向上延伸。複數個單位電極體220m以固定間隔配置於X軸方向上。電極線部220p與單位電極體220m隔開特定間隔而配置,且兩者間藉由連接部220z而連接。再者,亦可採用省略連接部220z,而於電極線部220p上直接設置單位電極體220m之構成。 As shown in FIG. 12B, the Y electrode 220C includes a plurality of unit electrode bodies 220m, electrode line portions 220p, and a plurality of connecting portions 220z. The electrode wire portion 220p extends in the X-axis direction. The plurality of unit electrode bodies 220m are arranged at a fixed interval in the X-axis direction. The electrode line portion 220p is disposed at a predetermined interval from the unit electrode body 220m, and is connected to each other by the connection portion 220z. Further, the configuration in which the unit electrode body 220m is directly provided on the electrode line portion 220p may be employed by omitting the connection portion 220z.
如上所述,單位電極體220m整體具有梳齒狀。具體而言,單位電極體220m包括複數個輔助電極220w及連結部220y。複數個輔助電極220w於X軸方向上延伸。相鄰之輔助電極220w之間隔開特定之間隔。複數個輔助電極220w之一端連接於在Y軸方向上延伸之連結部220y。 As described above, the unit electrode body 220m has a comb shape as a whole. Specifically, the unit electrode body 220m includes a plurality of auxiliary electrodes 220w and a connecting portion 220y. A plurality of auxiliary electrodes 220w extend in the X-axis direction. The adjacent auxiliary electrodes 220w are spaced apart by a specific interval. One end of the plurality of auxiliary electrodes 220w is connected to the joint portion 220y extending in the Y-axis direction.
如圖13A所示,於各個單位電極體210m與各個單位電極體220m相互組合之區域形成各檢測部20Cs。單位電極體210m之複數個輔助電極210w與單位電極體220m之複數個輔助電極220w朝向Y軸方向而交替地排列。即,輔助電極210w、220w於電極基板20C之面內方向(例如Y軸方向)上相互對向而配置。 As shown in FIG. 13A, each detecting unit 20Cs is formed in a region where each unit electrode body 210m and each unit electrode body 220m are combined with each other. The plurality of auxiliary electrodes 210w of the unit electrode body 210m and the plurality of auxiliary electrodes 220w of the unit electrode body 220m are alternately arranged in the Y-axis direction. In other words, the auxiliary electrodes 210w and 220w are arranged to face each other in the in-plane direction (for example, the Y-axis direction) of the electrode substrate 20C.
圖13B係自圖13A之A-A方向觀察之剖面圖。Y電極220C雖與第1實施形態同樣地與X電極210C交叉而設置,但形成於與X電極210C同一平面上。因此,如圖13B所示,X電極210C與Y電極220C交叉之區域係以各X電極210C及各Y電極220C不直接接觸之方式構成。即,於X電極210C之電極線部210p及Y電極220C之電極線部220p上設置有絕緣層220r。並且,於X電極210C與Y電極220C交叉之區域,以跨越該 絕緣層220r之方式設置有跨接配線部220q。藉由該跨接配線部220q而連結電極線部220p。 Figure 13B is a cross-sectional view as seen from the direction of A-A of Figure 13A. The Y electrode 220C is provided to intersect the X electrode 210C as in the first embodiment, but is formed on the same plane as the X electrode 210C. Therefore, as shown in FIG. 13B, the region where the X electrode 210C and the Y electrode 220C intersect is configured such that each of the X electrodes 210C and the Y electrodes 220C are not in direct contact with each other. That is, the insulating layer 220r is provided on the electrode line portion 210p of the X electrode 210C and the electrode line portion 220p of the Y electrode 220C. And, in a region where the X electrode 210C and the Y electrode 220C intersect, to cross the The jumper wiring portion 220q is provided in the form of the insulating layer 220r. The electrode line portion 220p is connected by the jumper wiring portion 220q.
圖14係用以說明本實施形態之檢測部20Cs之構成之模式性剖面圖。該圖所示之例中,於檢測部20Cs,輔助電極210w1與輔助電極220w1、輔助電極220w1與輔助電極210w2、輔助電極210w2與輔助電極220w2、輔助電極220w2與輔助電極210w3、及輔助電極210w3與輔助電極220w3分別電容耦合。即,構成為,將基材211C作為介電層,各輔助電極間之靜電電容Cc11、Cc12、Cc13、Cc14、Cc15可根據金屬膜12及導體層50之各者與包含輔助電極之第1及第2電極線210C、220C之電容耦合而變化。 Fig. 14 is a schematic cross-sectional view for explaining the configuration of the detecting unit 20Cs of the embodiment. In the example shown in the figure, in the detecting portion 20Cs, the auxiliary electrode 210w1 and the auxiliary electrode 220w1, the auxiliary electrode 220w1 and the auxiliary electrode 210w2, the auxiliary electrode 210w2 and the auxiliary electrode 220w2, the auxiliary electrode 220w2 and the auxiliary electrode 210w3, and the auxiliary electrode 210w3 are The auxiliary electrodes 220w3 are respectively capacitively coupled. In other words, the substrate 211C is used as a dielectric layer, and the capacitances Cc11, Cc12, Cc13, Cc14, and Cc15 between the auxiliary electrodes can be based on the first of the metal film 12 and the conductor layer 50 and the first electrode including the auxiliary electrode. The second electrode lines 210C and 220C are capacitively coupled to each other.
根據上述構成,無需電極基板之第2基材及接著層,而可對輸入裝置100C之薄型化做貢獻。又,多個輔助電極彼此電容耦合,且可縮短電容耦合之輔助電極間之距離。藉此,可使輸入裝置100C整體之電容耦合量增加,並且可提高檢測感度。 According to the above configuration, the second substrate and the subsequent layer of the electrode substrate are not required, and the thickness of the input device 100C can be reduced. Further, the plurality of auxiliary electrodes are capacitively coupled to each other, and the distance between the auxiliary electrodes of the capacitive coupling can be shortened. Thereby, the capacitive coupling amount of the entire input device 100C can be increased, and the detection sensitivity can be improved.
又,本實施形態之感測裝置亦包括用以電磁性地遮蔽構成檢測部20Cs之電極線免受雜訊源影響之屏蔽層S2。如圖15A~C所示,屏蔽層S2設置於電極基板20C。 Further, the sensing device of the present embodiment includes a shield layer S2 for electromagnetically shielding the electrode lines constituting the detecting portion 20Cs from the noise source. As shown in FIGS. 15A to 15C, the shield layer S2 is provided on the electrode substrate 20C.
圖15A係電極基板20C之主要部分俯視圖,圖15B係圖15A之B1-B1線剖面圖,圖15C係圖15A之C1-C1線剖面圖。 Fig. 15A is a plan view showing a principal part of a substrate 20C, Fig. 15B is a cross-sectional view taken along line B1-B1 of Fig. 15A, and Fig. 15C is a cross-sectional view taken along line C1-C1 of Fig. 15A.
如圖15A所示,屏蔽層S2包含:第1導體膜S21,其被覆第1電極線210C之電極線部210p;及第2導體膜S22,其被覆第2電極線220C之電極線部220p之至少一部分。該等電極線部210p、220p相當於連接複數個檢測部20Cs間之第1及第2電極線210、220之配線區域。 As shown in FIG. 15A, the shield layer S2 includes a first conductor film S21 covering the electrode line portion 210p of the first electrode line 210C, and a second conductor film S22 covering the electrode line portion 220p of the second electrode line 220C. At least part. The electrode line portions 210p and 220p correspond to a wiring region connecting the first and second electrode lines 210 and 220 between the plurality of detecting portions 20Cs.
又,屏蔽層S2分別包含配置於第1導體膜S21與電極線部210p間之絕緣膜、及配置於第2導體膜S22與電極線部220p間之絕緣膜。本實施形態之上述各絕緣膜分別相當於被覆電極線部210p、220p之絕緣層 220r。 Further, the shield layer S2 includes an insulating film disposed between the first conductor film S21 and the electrode line portion 210p, and an insulating film disposed between the second conductor film S22 and the electrode line portion 220p. Each of the insulating films of the present embodiment corresponds to an insulating layer covering the electrode line portions 210p and 220p. 220r.
即,本實施形態之屏蔽層S2設置於與跨接配線部220q及絕緣層220r同一平面上。第1及第2導體膜S21、S22設置於與跨接配線部220q同一平面上。因此,藉由利用與跨接配線部220q相同之材料構成第1及第2導體膜S21、S22,而能夠以同一步驟形成第1及第2導體膜S21、S22與跨接配線部220q。即,於此例中,可於形成第1電極線210C及第2電極線220C後,在第1電極線210C與第2電極線220C之交叉部同時形成存在於跨接配線部220q與第1電極線210C間之絕緣層220r、以及被覆第1電極線210C及第2電極線220C之絕緣層220r。進而,此後可同時形成跨接配線部220q與上述第1及第2導體膜S21、S22。形成方法並無特別限定,典型而言可應用網版印刷等印刷法。 That is, the shield layer S2 of the present embodiment is provided on the same plane as the jumper wiring portion 220q and the insulating layer 220r. The first and second conductor films S21 and S22 are provided on the same plane as the jumper wiring portion 220q. Therefore, by forming the first and second conductor films S21 and S22 by the same material as the jumper wiring portion 220q, the first and second conductor films S21 and S22 and the jumper wiring portion 220q can be formed in the same step. In other words, in this example, after the first electrode line 210C and the second electrode line 220C are formed, the intersection of the first electrode line 210C and the second electrode line 220C can be simultaneously formed in the jumper wiring portion 220q and the first The insulating layer 220r between the electrode lines 210C and the insulating layer 220r covering the first electrode line 210C and the second electrode line 220C. Further, the jumper wiring portion 220q and the first and second conductor films S21 and S22 can be formed simultaneously. The formation method is not particularly limited, and a printing method such as screen printing can be typically applied.
再者,為了避免第1及第2導體膜S21、S22與跨接配線部220q之電性接觸,屏蔽層S2包含使跨接配線部220q露出之開口部S20。當然,並不限定於此,亦可藉由利用屏蔽層S被覆跨接配線部220q而提昇遮罩效果。於此情形時,可採用圖16A~C所示之屏蔽層S3之構成。 In addition, in order to avoid electrical contact between the first and second conductor films S21 and S22 and the jumper wiring portion 220q, the shield layer S2 includes an opening S20 through which the jumper wiring portion 220q is exposed. Of course, the present invention is not limited thereto, and the masking effect may be improved by covering the wiring portion 220q with the shield layer S. In this case, the constitution of the shield layer S3 shown in Figs. 16A to 16C can be employed.
圖16A係電極基板20C之主要部分俯視圖,圖16B係圖16A之B2-B2線剖面圖,圖16C係圖16A之C2-C2線剖面圖。 Fig. 16A is a plan view of a main portion of an electrode substrate 20C, Fig. 16B is a cross-sectional view taken along line B2-B2 of Fig. 16A, and Fig. 16C is a cross-sectional view taken along line C2-C2 of Fig. 16A.
於此例中,於形成跨接配線部220q後,形成被覆跨接配線部220q之絕緣膜220r1,進而於該絕緣膜220r1上分別形成上述第1及第2導體膜S21、S22。即,本例之屏蔽層S3包含:第1及第2導體膜S21、S22;及絕緣膜220r1,其配置於該等導體膜S21、S22與電極線部210p、220p間。 In this example, after the jumper wiring portion 220q is formed, the insulating film 220r1 covering the jumper wiring portion 220q is formed, and the first and second conductor films S21 and S22 are formed on the insulating film 220r1. That is, the shield layer S3 of this example includes the first and second conductor films S21 and S22, and the insulating film 220r1 disposed between the conductor films S21 and S22 and the electrode line portions 210p and 220p.
以上,對本技術之實施形態進行了說明,但本技術並不僅限於上述實施形態,當然可於不脫離本技術之主旨之範圍內加以各種變更。 While the embodiments of the present invention have been described above, the present invention is not limited to the embodiments described above, and various modifications may be made without departing from the spirit and scope of the invention.
例如,以上之第1實施形態係利用直線狀之電極線或電極線群構成為第1電極線210,但並不限定於此,可採用各種形狀之電極。 For example, in the first embodiment described above, the first electrode line 210 is configured by a linear electrode line or an electrode line group. However, the present invention is not limited thereto, and electrodes of various shapes may be employed.
例如,如圖17所示,第1電極線210D亦可分別包含複數個單位電極體210Dm。單位電極體210Dm形成於與第2電極線交叉之對向區域,而構成電容感測器。X電極210D之單位電極體210Dm雖藉由複數個輔助電極構成,但亦可由平板狀之固體電極構成。 For example, as shown in FIG. 17, the first electrode lines 210D may also include a plurality of unit electrode bodies 210Dm. The unit electrode body 210Dm is formed in an opposing region that intersects with the second electrode line, and constitutes a capacitance sensor. The unit electrode body 210Dm of the X electrode 210D is composed of a plurality of auxiliary electrodes, but may be composed of a flat solid electrode.
單位電極體之構成並不限定於上述之例,可採用例如圖18(A)~(P)所示之各種形態者。 The configuration of the unit electrode body is not limited to the above example, and various forms shown in, for example, FIGS. 18(A) to (P) can be employed.
關於複數條第2電極線220,亦同樣地可採用如圖19A所示般分別由包含複數條電極細線之電極線群構成之電極線220D,亦可採用如圖19B所示般分別包含複數個單位電極體之電極線220E。或者,亦可由如圖19C所示般分別由單一電極線220F構成。 Similarly to the plurality of second electrode lines 220, the electrode lines 220D each composed of a plurality of electrode lines including a plurality of electrode thin lines may be used as shown in FIG. 19A, or may be plural as shown in FIG. 19B. The electrode line 220E of the unit electrode body. Alternatively, it may be composed of a single electrode line 220F as shown in Fig. 19C.
又,用以遮蔽檢測部20s使其免受電磁雜訊影響之屏蔽層S1、S2雖配置於可撓性顯示器11與檢測部20s間,但於雜訊源存在於導體層50側之情形(例如設置有輸入裝置之驅動電路等配線基板之情形)時,亦可於電極基板之背面側亦配置屏蔽層。 Further, the shield layers S1 and S2 for shielding the detecting portion 20s from electromagnetic noise are disposed between the flexible display 11 and the detecting portion 20s, but the noise source is present on the conductor layer 50 side ( For example, when a wiring board such as a driving circuit of an input device is provided, a shielding layer may be disposed on the back side of the electrode substrate.
並且,以上各實施形態雖對以一對支持體30、40支持電極基板20之構成進行了說明,但亦可僅以其中任一支持體支持電極基板20。圖20係表示省略第2支持體40之輸入裝置之構成例。 Further, in the above embodiments, the configuration in which the electrode substrate 20 is supported by the pair of supports 30 and 40 has been described. However, the electrode substrate 20 may be supported by only one of the supports. FIG. 20 shows an example of the configuration of an input device in which the second support 40 is omitted.
並且,以上各實施形態雖列舉具備第1及第2支持體30、40之輸入裝置為例進行了說明,但本技術亦可適用於僅具備該等支持體中之任一者之輸入裝置、或不具備任何支持體之輸入裝置。 Further, in the above embodiments, the input device including the first and second supports 30 and 40 has been described as an example. However, the present technology is also applicable to an input device including only one of the supports. Or an input device that does not have any support.
進而,雖列舉可撓性顯示器11作為操作構件10為例進行了說明,但並不限定於此,本技術亦可適用於例如顯示有鍵序列之鍵盤等。 Further, although the flexible display 11 has been described as an example of the operation member 10, the present invention is not limited thereto, and the present technology is also applicable to, for example, a keyboard on which a key sequence is displayed.
再者,本技術亦可獲得如下之構成。 Furthermore, the present technology can also obtain the following constitution.
(1)一種感測裝置,其包括: 電極基板,其包含複數條第1電極線及複數條第2電極線,且由分別形成於上述複數條第1電極線與上述複數條第2電極線之複數個對向區域的複數個電容感測器呈矩陣狀排列而成;及屏蔽層,其設置於上述電極基板且包含導體膜,該導體膜遮蔽連接上述複數個對向區域間之上述複數條第2電極線之至少一部分配線區域。 (1) A sensing device comprising: The electrode substrate includes a plurality of first electrode lines and a plurality of second electrode lines, and a plurality of capacitive sensations respectively formed in a plurality of opposing regions of the plurality of first electrode lines and the plurality of second electrode lines The detectors are arranged in a matrix; and the shielding layer is disposed on the electrode substrate and includes a conductor film that shields at least a part of the wiring regions connecting the plurality of second electrode lines between the plurality of opposing regions.
(2)如上述(1)之感測裝置,其中上述複數條第1電極線與上述複數條第2電極線係於上述電極基板之厚度方向上相隔而配置,且上述複數個電容感測器分別形成於上述複數條第1電極線與上述複數條第2電極線之交叉區域。 (2) The sensing device according to (1) above, wherein the plurality of first electrode lines and the plurality of second electrode lines are arranged apart from each other in a thickness direction of the electrode substrate, and the plurality of capacitance sensors Each of the plurality of first electrode lines and the plurality of second electrode lines intersects each other.
(3)如上述(2)之感測裝置,其中上述電極基板包含:第1絕緣層,其支持上述複數條第1電極線;及第2絕緣層,其支持上述複數條第2電極線;且上述屏蔽層設置於上述第1絕緣層。 (3) The sensor device according to (2), wherein the electrode substrate includes: a first insulating layer supporting the plurality of first electrode lines; and a second insulating layer supporting the plurality of second electrode lines; The shield layer is provided on the first insulating layer.
(4)如上述(3)之感測裝置,其中上述屏蔽層設置於與上述複數條第1電極線同一平面上。 (4) The sensing device according to (3) above, wherein the shielding layer is provided on a same plane as the plurality of first electrode lines.
(5)如上述(2)至(4)中任一項之感測裝置,其中上述導體膜由與上述複數條第1電極線相同之材料構成。 (5) The sensing device according to any one of (2) to (4) wherein the conductor film is made of the same material as the plurality of first electrode lines.
(6)如上述(2)至(5)中任一項之感測裝置,其中上述導體膜包含配置於上述複數條第1電極線各者間之複數條第3電極線。 (6) The sensing device according to any one of (2) to (5), wherein the conductor film includes a plurality of third electrode lines disposed between each of the plurality of first electrode lines.
(7)如上述(6)之感測裝置,其中上述導體膜進而包含將上述複數條第3電極線相互連接之配線部。 (7) The sensing device according to (6) above, wherein the conductor film further includes a wiring portion that connects the plurality of third electrode lines to each other.
(8)如上述(1)之感測裝置,其中上述複數個電容感測器分別形成於與在上述電極基板之面內方向上相互對向之上述複數條第1電極線及上述複數條第2電極線之對向區域,且上述屏蔽層進而包含配置於上述導體膜與上述配線區域間之絕緣膜。 (8) The sensing device according to (1) above, wherein the plurality of capacitance sensors are respectively formed on the plurality of first electrode lines and the plurality of strips facing each other in an in-plane direction of the electrode substrate In the opposing region of the electrode line, the shield layer further includes an insulating film disposed between the conductor film and the wiring region.
(9)如上述(8)之感測裝置,其中上述電極基板包含設置於上述複數條第1電極線與上述複數條第2電極線之交叉部之複數個跨接配線部。 (9) The sensing device according to (8) above, wherein the electrode substrate includes a plurality of jumper wiring portions provided at an intersection of the plurality of first electrode lines and the plurality of second electrode lines.
(10)如上述(9)之感測裝置,其中上述導體膜設置於與上述複數個跨接配線部同一平面上。 (10) The sensing device according to (9) above, wherein the conductor film is provided on a same plane as the plurality of jumper wiring portions.
(11)如上述(9)之感測裝置,其中上述屏蔽層被覆上述複數個跨接配線部。 (11) The sensing device according to (9) above, wherein the shielding layer covers the plurality of jumper wiring portions.
(12)如上述(9)至(11)中任一項之感測裝置,其中上述導體膜係由與上述複數個跨接配線部相同之材料構成。 (12) The sensing device according to any one of (9) to (11), wherein the conductor film is made of the same material as the plurality of jumper wiring portions.
(13)如上述(1)至(12)中任一項之感測裝置,其中上述屏蔽層進而遮蔽連接上述複數個對向區域間之上述複數條第1電極線之至少一部分配線區域。 The sensing device according to any one of (1) to (12), wherein the shielding layer further shields at least a part of the wiring regions connecting the plurality of first electrode lines between the plurality of opposing regions.
(14)如上述(1)至(13)中任一項之感測裝置,其中上述複數條第2電極線包含外周配線部,該外周配線部形成於形成有呈矩陣狀排列之上述複數個電容感測器之檢測區域之外側;且上述屏蔽層進而遮蔽上述外周配線部之至少一部分。 The sensing device according to any one of the above-mentioned (1), wherein the plurality of second electrode lines include outer peripheral wiring portions formed in the plurality of the plurality of rows arranged in a matrix The outer side of the detection area of the capacitance sensor; and the shielding layer further shields at least a portion of the outer peripheral wiring portion.
(15)如上述(1)至(14)中任一項之感測裝置,其進而包括:可變形之第1導體層,其與上述電極基板之一主面對向而配置;及第1支持體,其包含連接上述第1導體層與上述電極基板間之複 數個第1構造體。 (15) The sensing device according to any one of (1) to (14) further comprising: a deformable first conductor layer disposed to face one of the electrode substrates; and the first a support comprising a connection between the first conductor layer and the electrode substrate Several first structures.
(16)如上述(15)之感測裝置,其進而包括:第2導體層,其與上述電極基板之另一主面對向而配置;及第2支持體,其包含連接上述第2導體層與上述電極基板間之複數個第2構造體。 (16) The sensing device according to (15) above, further comprising: a second conductor layer disposed to face the other main surface of the electrode substrate; and a second support including a second conductor a plurality of second structures between the layer and the electrode substrate.
10‧‧‧操作構件 10‧‧‧Operating components
11‧‧‧可撓性顯示器 11‧‧‧Flexible display
12‧‧‧金屬膜 12‧‧‧Metal film
13‧‧‧接著層 13‧‧‧Next layer
20‧‧‧電極基板 20‧‧‧Electrode substrate
20s‧‧‧檢測部 20s‧‧‧Detection Department
21‧‧‧第1配線基板 21‧‧‧1st wiring substrate
22‧‧‧第2配線基板 22‧‧‧2nd wiring substrate
23‧‧‧接著層 23‧‧‧Next layer
30‧‧‧第1支持體 30‧‧‧1st support
31‧‧‧基材 31‧‧‧Substrate
32‧‧‧構造層 32‧‧‧Structural layer
35‧‧‧接著層 35‧‧‧Next layer
40‧‧‧第2支持體 40‧‧‧2nd support
50‧‧‧導體層 50‧‧‧ conductor layer
60‧‧‧控制部 60‧‧‧Control Department
61‧‧‧運算部 61‧‧‧ Computing Department
62‧‧‧信號產生部 62‧‧‧Signal Generation Department
100‧‧‧輸入裝置 100‧‧‧ input device
110‧‧‧第1面 110‧‧‧1st
120‧‧‧第2面 120‧‧‧2nd
210‧‧‧第1電極線 210‧‧‧1st electrode line
220‧‧‧第2電極線 220‧‧‧2nd electrode line
310‧‧‧第1構造體 310‧‧‧1st structure
320‧‧‧第1殼體 320‧‧‧1st housing
321‧‧‧第1凸部 321‧‧‧1st convex
322‧‧‧第2凸部 322‧‧‧2nd convex
323‧‧‧凹部 323‧‧‧ recess
330‧‧‧第1空間部 330‧‧‧First Space Department
341‧‧‧接合部 341‧‧‧ joints
410‧‧‧第2構造體 410‧‧‧2nd structure
420‧‧‧第2殼體 420‧‧‧ second housing
430‧‧‧第2空間部 430‧‧‧2nd Space Department
S1‧‧‧屏蔽層 S1‧‧‧Shield
Claims (18)
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|---|---|---|---|
| JP2013187946 | 2013-09-11 |
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| TW201510814A true TW201510814A (en) | 2015-03-16 |
| TWI625653B TWI625653B (en) | 2018-06-01 |
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| TW103124311A TWI625653B (en) | 2013-09-11 | 2014-07-15 | Sensing device, input device and electronic device |
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| JP (1) | JP6561835B2 (en) |
| KR (1) | KR20160053919A (en) |
| CN (1) | CN105531651B (en) |
| TW (1) | TWI625653B (en) |
| WO (1) | WO2015037171A1 (en) |
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| TWI718540B (en) * | 2019-05-23 | 2021-02-11 | 元太科技工業股份有限公司 | Touch structure and manufacturing method thereof and touch display device |
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| KR102410267B1 (en) * | 2017-09-08 | 2022-06-20 | 삼성디스플레이 주식회사 | Input sensing unit and electronic device including the same |
| JP6927508B2 (en) * | 2018-03-08 | 2021-09-01 | 佛山市▲順▼▲徳▼区美的▲電▼▲熱▼▲電▼器制造有限公司Foshan Shunde Midea Electrical Heating Appliances Manufacturing Co., Ltd. | Touch key structure and electric appliances |
| CN110247649A (en) * | 2018-03-08 | 2019-09-17 | 佛山市顺德区美的电热电器制造有限公司 | Touch key-press structure and electric appliance |
| KR102499112B1 (en) * | 2018-04-09 | 2023-02-13 | 삼성전자 주식회사 | Electronic device equipped with flexible display and method for wireless charging thereof` |
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| CN110618759B (en) | 2018-06-20 | 2023-06-09 | 鸿富锦精密工业(深圳)有限公司 | touch display device |
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| JP7377082B2 (en) * | 2019-11-29 | 2023-11-09 | 株式会社ジャパンディスプレイ | Detection device and method for manufacturing the detection device |
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2014
- 2014-06-27 WO PCT/JP2014/003433 patent/WO2015037171A1/en not_active Ceased
- 2014-06-27 CN CN201480048888.4A patent/CN105531651B/en not_active Expired - Fee Related
- 2014-06-27 JP JP2015536427A patent/JP6561835B2/en not_active Expired - Fee Related
- 2014-06-27 KR KR1020167005408A patent/KR20160053919A/en not_active Withdrawn
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| TWI718540B (en) * | 2019-05-23 | 2021-02-11 | 元太科技工業股份有限公司 | Touch structure and manufacturing method thereof and touch display device |
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| Publication number | Publication date |
|---|---|
| JPWO2015037171A1 (en) | 2017-03-02 |
| WO2015037171A1 (en) | 2015-03-19 |
| CN105531651A (en) | 2016-04-27 |
| KR20160053919A (en) | 2016-05-13 |
| JP6561835B2 (en) | 2019-08-21 |
| TWI625653B (en) | 2018-06-01 |
| CN105531651B (en) | 2019-07-12 |
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