TW201515160A - Apparatus and method for joining a plurality of semiconductor wafers to a substrate - Google Patents

Abstract

Apparatus and methods are provided for joining a plurality of semiconductor wafers to a substrate. The apparatus includes a frame; a plurality of bond heads coupled to the frame, each bond head being operative to obtain and release a wafer; and a bond pad coupled to the frame and operative to receive the substrate; a plurality of bonds Each bond head of the head is relatively movable relative to the bond stage and is operable to contact the wafer obtained by the bond head with the substrate received on the bond stage and release the wafer to bond the wafer to the substrate.

Description

Apparatus and method for joining a plurality of semiconductor wafers to a substrate

Various embodiments are directed to a device for bonding a semiconductor wafer to a substrate and a method of bonding a plurality of semiconductor wafers onto the substrate.

Many electronic devices include circuitry that controls the method of operation of the electronic device. The circuit can include a substrate on which one or more semiconductor wafers are bonded.

The process of bonding the semiconductor wafers can include utilizing an intermediate material such as, for example, solder to attach the wafer to the substrate. Additionally, the intermediate material can be electrically conductive such that electrical signals can be transmitted from the substrate to the wafer. The substrate can include one or more electrical tracks for transmitting electrical signals between different portions of the substrate and between different semiconductor wafers bonded to the substrate.

The process of bonding the semiconductor wafer to the substrate can include contacting the semiconductor wafer with the substrate and applying pressure and/or heat.

Over the past few decades, there has been a constant push to shrink electronic devices. Conversely, this has led to the need to bond smaller semiconductor wafers on the substrate. Since the size of the semiconductor wafer becomes smaller, its coupling with the substrate also becomes smaller. Therefore, the bonding process should accurately position the semiconductor wafer on the substrate. If the substrate and the semiconductor wafer are not aligned, the semiconductor wafer may malfunction or not operate at all. Therefore, there is a need to develop an apparatus for accurately aligning and bonding semiconductor wafers to bonded semiconductor wafers on a substrate.

There is also the power to reduce the time required to bond the semiconductor wafer to the substrate. By reducing this time, it is possible to reduce the overall time required to manufacture an electronic device. Conversely, more electronic devices can be fabricated in the same time period, which is clearly advantageous for large-scale production applications. Therefore, devices that bond semiconductor wafers are required to effectively bond the semiconductor wafer to the substrate.

In accordance with an aspect of the present invention, an apparatus for joining a semiconductor wafer to a substrate is provided, the apparatus comprising: a frame; a plurality of bond heads coupled to the frame, each bond head being operative to obtain and release a wafer; And an bond pad coupled to the frame and operable to receive the substrate; each bond head of the plurality of bond heads is relatively movable relative to the bond stage and is operable to interface the wafer obtained by the bond head with the bond stage The substrate received thereon contacts and releases the wafer to bond the wafer onto the substrate.

The at least two bond heads of the plurality of bond heads can be operable to move the wafer obtained by the at least two bond heads as a unit with respect to the bond stage.

The at least two bond heads may be operable to move the wafer obtained by the at least two bond heads as a unit in a plane parallel to the plane of the bond table.

The at least two bond heads can be operable to move the wafer obtained by the at least two bond heads as a unit toward or away from the bond stage.

One of the plurality of bond heads can be operative to relatively move the wafer obtained by the one bond head relative to the wafer obtained by the other bond head of the plurality of bond heads.

A bond head can be operative to move the wafer obtained by the one bond head in a plane parallel to the plane of the bond stage independently of the wafers obtained by the other bond heads.

A bond head can be operative to move the wafer obtained by the one bond head toward or away from the bond pad independently of the wafers obtained by the other bond heads.

The plurality of bond heads can be movably coupled to the frame and the bond heads can be linearly disposed, and the spacing between adjacent pairs of bond heads can be adjustable.

A plurality of bond heads can be coupled to the frame by rails and each of the bond heads can be operable to slide over the track to adjust the spacing between adjacent pairs of bond heads.

The length of the track may be resized such that when at least one of the bond heads slides to the end of the track, the relative movement between the at least one bond head and the land is limited such that the at least one bond head cannot be at least The wafer obtained by one bonding head is in contact with the substrate.

The track may be movably coupled to the frame and the track may include an operable drive mechanism to move the track toward or away from the landing station to move the plurality of bond heads toward or away from the landing station.

The frame may include a first platform and a facing second platform, the first platform being separated from the second platform by at least one pillar and parallel with the second platform, the plurality of bonding heads being coupled to the first platform and the coupling platform coupled Received the second platform.

The landing station can be movably coupled to the second platform and the landing station can include an operable drive mechanism to move the landing station in a plane parallel to the second platform.

The apparatus can further include a feeding device movably coupled to the frame, the feeding device including an operable drive mechanism to move the feeding device between the loading position and the feeding position, wherein in the loading position, the feeding device is configured to Receiving the wafer, in the feeding position, the feeding device is configured to present the wafer to one of the plurality of bonding heads such that the bonding head can obtain the wafer from the feeding device.

The feeding device can be operable to receive at least two wafers and present each wafer in a different one of the plurality of bonding heads.

The apparatus can further include an operable loading mechanism to load the wafer from the wafer onto the feeding device when the feeding device is in the loading position.

The apparatus can further include a camera movably coupled to the frame, the camera including an operable drive mechanism to move the camera relative to the plurality of bond heads and the docking station, the camera being configured to measure at least one engagement with respect to the landing pad The position of the head, wherein the at least one bond head and the landing station are operable to move to a mutual alignment based on a position measured by the camera.

The camera may be configured to move between the at least one bond head and the bonding stage, the camera having a first lens to measure a position of the at least one bond head relative to a reference point and to measure the bond stage relative to the reference point a second lens in position, wherein the at least one bond head and the bond stage are configured to move to a mutual alignment based on the position measured by the first and second lenses.

At least one bond head of the plurality of bond heads can be operable to heat the wafer obtained by the at least one bond head.

At least one bond head of the plurality of bond heads can be operable to apply a predetermined pressure to the wafer when the wafer is contacted with the substrate.

At least one bond head of the plurality of bond heads can include a suction device, wherein when the wafer is present on the at least one bond head, the suction device is configured to draw a wafer onto the at least one bond head and maintain suction to maintain the wafer The at least one bond head, and wherein the suction device is configured to stop suction to release the wafer from the at least one bond head.

The apparatus can further include a controller in communication with the joint station and each of the plurality of bond heads, the controller being operative to control the relative movement of each of the bond heads relative to the joint table to obtain a wafer and release the obtained Wafer.

The apparatus can further include an additional frame, a plurality of additional bond heads coupled to the additional frame, an additional joint station coupled to the additional frame, and an additional feed device movably coupled to the additional frame; Each of the plurality of additional bond heads is relatively movable relative to the additional bond stage and is operable to contact the wafer obtained by the bond head to an additional substrate received on the additional bond stage, and Release the wafer to bond the wafer to the additional substrate; wherein the additional feed device includes an operable drive mechanism to move the additional feed device between the loading position and the feed position, wherein in the loading position, the additional feed device is configured To receive the wafer, in the feeding position, the additional feeding device is configured to present the wafer to one of the additional plurality of bonding heads such that the bonding head can obtain the wafer from the additional feeding device, and wherein the loading mechanism is operable Loading the wafer onto the feeding device to present in a plurality of joints when in the loading position One engagement head, and when in the loading position, the wafer is loaded on the additional feeding means to present a plurality of engaging in additional head engaging a head.

According to a second aspect of the present invention, there is provided a method of joining a plurality of semiconductor wafers onto a substrate, the method comprising: a. receiving a substrate on a bonding stage; b. obtaining a first wafer from the first bonding head; Moving the first bonding head and the bonding stage relative to each other to align the first wafer on the first bonding head with the substrate on the bonding stage; d. obtaining the second wafer by the second bonding head; e. moving toward the bonding stage a bonding head to contact the first wafer and release the first wafer to bond the first wafer to the substrate, and retract the first bonding head from the bonding stage; f. move the second bonding head and the bonding stage relative to each other to Aligning the second wafer on the second bonding head with the substrate on the bonding stage; and g. moving the second bonding head toward the bonding stage to contact the second wafer to the substrate and release the second wafer to bond the second wafer to the substrate Upper and retract the second joint head from the joint table.

The method may further include obtaining a third wafer from the first bonding head after retracting the first bonding head from the bonding stage, and obtaining a fourth wafer from the second bonding head after retracting the second bonding head from the bonding stage.

The method may further include: heating the first wafer on the first bonding head before releasing the first wafer on the substrate; and second wafer on the second bonding head before releasing the second wafer on the substrate heating.

The method may further include: after releasing the first wafer on the substrate, delaying the first bonding head to obtain the third wafer to allow the first bonding head to cool; and delaying the second bonding head after releasing the second wafer on the substrate A fourth wafer is obtained to allow the second bond head to cool.

Various embodiments are directed to a device for bonding a semiconductor wafer to a substrate and a method of bonding a plurality of semiconductor wafers to the substrate. In an embodiment, a semiconductor wafer may be referred to as a wafer or chip.

Figure 1 shows an apparatus 2 for bonding a semiconductor wafer to a substrate in accordance with an embodiment. The device 2 comprises two joint heads 4, 6, a joint table 8 and a frame 10. The bond heads 4, 6 are coupled to the frame 10. The bonding stage 8 is coupled to the frame 10. It should be understood that the two joint heads 4, 6 represent a plurality of joint heads. In use, each bond head 4, 6 is operable to obtain and release a semiconductor wafer, wherein the bond stage 8 is operable to receive the substrate. Furthermore, each of the bond heads 4, 6 is relatively movable and operable relative to the bond stage 8 to contact the wafers obtained by the bond heads 4, 6 with the substrate received on the bond stage 8 and to release the wafer for bonding. The wafer is on the substrate. In an embodiment, the plurality of bond heads are movable relative to the bond stage 8 and/or the bond stage 8 is movable relative to the plurality of bond heads.

Further details of the device 2 and its operation will be described below with reference to the specific embodiment of Figure 1. It should be understood that at least some of these further details may not be present in some other embodiments.

When referring more specifically to Figure 1, the frame 10 supports the different components of the device 2 comprising the bond heads 4, 6 and the landing station 8. The frame 10 includes a lower platform 10b, an upper platform 10a, and two pillars 10c and 10d. The pillars 10c and 10d support the upper platform 10a on the lower platform 10b and are spaced apart from the lower platform 10b. The precise spacing between the upper and lower platforms can vary between different embodiments. The upper platform 10a is substantially parallel to the lower platform 10b. To ensure that the different elements of the device 2 are stable during operation, the frame 10 can be made of a rigid material such as, for example, metal.

In an embodiment, the landing station 8 is coupled to the lower platform 10b by an X-Y positioning system (ie, a drive mechanism). Specifically, the bonding stage 8 is configured to be moved by a X-Y positioning system on a plane on the lower platform 10b and parallel to the lower platform 10b. The X-Y positioning system includes a rod 12 having two rails 14a and 14b positioned thereon. The bottom surface of the joint table 8 is configured to have a cooperative groove (not shown) in which the rails 14a and 14b slide. Therefore, the joint table 8 can be configured with the upper lower slide bar 12. The apparatus 2 may further comprise a drive mechanism, such as a motor, to move the joint 8 on the rod 12. It should be understood that the bottom surface of the bonding table 8 is opposite the side of the bonding table 8 that is configured to receive the substrate.

Further, the lower platform 10b includes two rails 16a and 16b. The bottom surface of the rod 12 is configured to have a cooperating groove (not shown) in which the rails 16a and 16b can slide. Therefore, the rod 12 is configured to slide the lower platform 10b up and down. The apparatus 2 may further comprise a drive mechanism, such as a motor, to move the rod 12 on the lower platform 10b. It should be understood that the bottom surface of the rod 12 is opposite the side of the rod 12 that is configured to receive the joint table 8. It should be understood that the upward sliding movement of the joint table 8 is substantially orthogonal to the up and down sliding movement of the rod 12 such that the joint table 8 can be moved in the X and/or Y direction relative to the lower platform 10b. The X and Y directions are indicated on the first figure by the opposite arrows.

Device 2 may include a controller (not shown) in communication with the X-Y positioning system. In use, the controller can exchange electrical signals with the X-Y positioning system to communicate with the X-Y positioning system and control the X-Y positioning system. For example, the controller can control the X and Y movement of the landing station 8. In an embodiment, the controller can send an instruction to the X-Y positioning system indicating how the X-Y positioning system operates. X-Y can send feedback data to the controller to assist the controller in controlling the operation of the X-Y positioning system.

The bond heads 4 and 6 are coupled to the upper platform 10a. Bonding heads 4 and 6 can be identical.

The structure of the bonding head 201 will be described below based on Fig. 2 . It should be understood that in the embodiment, the joint heads 4 and 6 are the same as the joint heads 201 in FIG.

In an embodiment, the bond head 201 is operable to obtain and release a wafer (not shown). For example, the wafer may be in contact with a substrate received on the bonding stage 8 and released to bond the wafer onto the substrate. The bond head 201 includes an engagement brake 204 coupled to the top of the upper platform 10a. The drive shaft 208 is coupled between the engagement brake 204 of the joint head 201 and the joint plate 210. The drive shaft 208 is positioned through a hole (not shown) in the upper platform 10a and slidable in the hole. The adapter plate 210 is also movably coupled to the upper platform 10a by at least two engagement slide guides 206a and 206b of the engagement device 201. Each of the engaging sliding guides 206a, 206b slides in a respective hole (not shown) passing through the upper platform 10a. The engagement brake 204 and the engagement slide guides 206a and 206b form a system that controls the vertical movement of the joint head 201 relative to the joint table 8 and the upper platform 10a. Specifically, the engagement brake 204 can extend or retract the drive shaft 208 vertically to move the engagement plate 210 toward or away from the upper platform 10a. Engaging the sliding guides 206a and 206b ensures stability and alignment of the bonding head 201 as it moves vertically.

In an embodiment, the horizontal moving plate 212 may be coupled to the bottom surface of the joint plate 210. In an embodiment, the horizontal moving plate 212 is configured to slide horizontally across the joint plate 210 in the X direction. This direction of movement is indicated on Figure 2 by the arrow labeled X. Further, the horizontal moving plate 212 is configured to slide horizontally across the joint plate 210 in the Y direction. Referring to Figure 2, this direction of movement will be the entry and exit page. It should be understood that the bottom surface of the joint plate 210 is located opposite the side of the joint plate 210 facing the upper platform 10a. The bond head 201 can further include a drive mechanism, such as a motor, to move the horizontally moving plate 212 relative to the joint plate 210.

In an embodiment, the angular moving plate 214 can be coupled to the bottom surface of the horizontal moving plate 212 by a connecting plate 216. The connection plate 216 is configured to move horizontally (in the X and/or Y directions) with the horizontal moving plate 212. The angular moving plate 214 is configured to rotate relative to the connecting plate 216. The bond head 201 can further include a drive mechanism, such as a motor, to move the plate 214 relative to the rotational angle of the connection plate 216. It should be understood that angular movement (also referred to as rotational movement or θ-direction movement) allows the lower portion of the joint head 201 (ie, the angular movement plate 214 and below) to be opposite the upper portion of the joint head 201 (ie, the connection plate 216 and The above) rotates around the Z axis of the bonding head 201. This axis is indicated on the second figure by the dashed line labeled Z. In other embodiments, the attachment plate 216 can be omitted and the angular movement plate 214 is configured to rotate relative to the horizontally moving plate 212.

In an embodiment, the bond heater 220 is coupled to the bottom surface of the angular moving plate 214 to allow the bond head 201 to heat the wafer obtained by the bond head. The top end of the bond head 201 is provided by a bonding tool 218 coupled to the bottom surface of the bond heater 220. The bond head 201 can be configured with a vacuum tool, such as a suction device, to allow the bonding tool 218 to obtain and release the wafer. In other embodiments, a mechanical tool, such as a gripping device, can be provided to obtain and release the wafer. For example, the suction device can be configured to draw a wafer directly below the bond head 201 on the bonding tool 218 and maintain suction to maintain the wafer in position. The suction device is configured to close to release the wafer from the bonding tool 218. It should be understood that the bonding heater 220 is capable of heating the wafer obtained by the bonding tool 218. In other embodiments, a bonding plate (not shown) may be included between the bonding heater 220 and the angular moving plate 214.

It should be understood that the engagement tool 218 can be moved perpendicular (i.e., in the Z direction) relative to the upper platform 10a by engaging the brake 204 and the drive shaft 208. Moreover, the bonding tool 218 can be moved horizontally (i.e., in the X and Y directions) relative to the upper platform 10a by the horizontal moving plate 212. Moreover, the bonding tool 218 can be rotated relative to the upper platform 10a by the angular movement plate 214 (i.e., in the θ direction). Moreover, the movement relative to the upper platform 10a can also be converted to movement relative to the frame 10 and/or other aspects of the landing station 8.

It should be understood that the joint head 201 of Fig. 2 may be a fixed joint head because it is fixed to the upper platform 10a of the frame 10. Specifically, the bonding tool 218 of the bonding head 201 can be moved in the vertical, horizontal, and θ directions with respect to the upper stage 10a by the bonding plate 210, the horizontal moving plate 212, and the angular moving plate 214. However, the engagement sliding guides 206a, 206b that engage the brake 204 and the engagement head 201 are not movable relative to the upper platform 10a, for example, the entire engagement head 201 cannot slide along or toward or away from the upper platform 10a. Therefore, the joint head 201 can be a fixed joint head.

As mentioned above, device 2 can include a controller. The controller can be in communication with the bond heads 4, 6. In use, the controller can exchange electrical signals with the bond heads 4, 6 to communicate with the bond heads 4, 6 and control the bond heads 4, 6. For example, the controller can control the X, Y, Z, and θ movements of the bonding tool 218. In an embodiment, the controller may send an instruction to the bond heads 4, 6 indicating how the bond heads 4, 6 operate. The bond heads 4, 6 can send feedback data to the controller to assist the controller in controlling the operation of the bond heads 4, 6.

Considering the apparatus 2 of Fig. 1, the movement of the joint head 4 described above can be performed corresponding to the movement of the joint head 6. Therefore, the joint heads 4, 6 are integrally moved in the X, Y, Z, and θ directions, that is, they can make the same movement at the same time. Additionally or alternatively, the bond head 4 can be moved in the X, Y, Z and θ directions independently of the bond head 6.

Figure 3 illustrates another view of certain portions of the embodiment of Figure 1. In the embodiment of Fig. 3, the joint heads 4 and 6 are similar to the joint head 201 of Fig. 2.

In the embodiment, the joint heads 4 and 6 are adjacent to each other and spaced apart from each other on the upper platform 10a. The spacing between adjacent bond heads 4 and 6 can vary between different embodiments. The bond heads 4 and 6 are coupled to the upper platform 10a such that the respective bonding tools of the bond heads 4 and 6 are located between the upper platform 10a and the lower platform 10b. In this arrangement, the respective engagement brakes of the bond heads 4 and 6 and the respective engagement slide guides are coupled to the upper platform 10a. The frame 10 provides support for the joint heads 4 and 6 and holds the joint heads 4 and 6 in position while the joint tools of the joint heads 4 and 6 move relative to the lower platform 10b and the joint table (not shown) positioned thereon. In the horizontal, vertical and angular directions.

Figure 4 illustrates another view of certain portions of the embodiment of Figure 1. In the embodiment of Fig. 4, the joint heads 4 and 6 are similar to the joint head 201 of Fig. 2.

In the embodiment, the fixed axes of each of the bond heads 4, 6 are indicated by reference lines 400a and 400b, respectively. The fixed shaft of each of the joint heads 4, 6 may be the shaft around which the joint tool of the corresponding joint head rotates. The bond heads 4 can be spaced apart from the bond heads 6 such that their respective fixed axes are separated by a distance d. The value of d can vary between different embodiments. As described with reference to Figure 2, the bonding tools of the bond heads 4, 6 are configured to angularly and vertically move around and along their respective fixed axes 400a and 400b. The angular movement of the bond head 4 is indicated by arrow 402a and the angular movement of the bond head 6 is indicated by arrow 402b. The vertical movement of the bond head 4 is indicated by arrow 404a and the vertical movement of the bond head 6 is indicated by arrow 404b. In an embodiment, the bond head 4 can be moved vertically and/or angularly independently of the bond head 6. Additionally or alternatively, the bond head 4 can be moved vertically and/or angularly together with the bond head 6 as a component.

Parts (a) and (b) of Fig. 5 show two devices 500 and 502 according to different embodiments.

In the embodiment, considering the portion of Fig. 5(a), the device 500 is similar to the device 2 shown in Fig. 3. However, device 500 contains only half of device 2. Specifically, the frame of the device 500 includes an upper platform 10a' and a lower platform 10b'. As described above, the frame includes a post 10d' that connects the upper platform 10a' to the lower platform 10b'. However, no pillars are provided on the other side of the upper and lower platforms (ie, the right side). This gives the device 500 a cantilevered or C-shaped arrangement that releases additional work space. Furthermore, the upper platform 10a' is substantially parallel to the lower platform 10b' by the struts 10d'. As mentioned above, the upper platform 10a' has been coupled to the bonding head 4' thereon.

In the embodiment, considering the portion of part (b) of Fig. 5, the device 502 is similar to the device 2 shown in Fig. 3 and the device 500 of the portion of the fifth figure (a). Specifically, device 502 includes all of the same features as device 500; however, device 502 includes a lower platform 10b from device 2, in place of lower platform 10b. Moreover, device 502 includes a second upper platform 10a" that is substantially parallel to first upper platform 10a', but is located in a different plane. Specifically, the second upper platform 10a'' is closer to the lower platform 10b than the first upper platform 10a'. Apparatus 502 includes a post 10c" that connects the second upper platform 10a" to the lower platform 10b. Furthermore, the second upper platform 10a'' is substantially parallel to the lower platform 10b by the struts 10c". The second upper platform 10a'' has been coupled to the bonding head 6''. In an embodiment, more than one bond head may be coupled to the first and/or second upper platform.

Figure 6 shows an apparatus 600 (not shown) for bonding a semiconductor wafer to a substrate in accordance with an embodiment. Device 600 is similar to device 2 of Figure 1; however, device 600 includes five bond heads 602a-e. Each of the bond heads 602a-e may be identical to the bond head 201 of FIG. It should be understood that the five bond heads 602a-e represent a plurality of bond heads (also referred to as bond head groups). The difference between the device 600 of Fig. 6 and the device 2 of Fig. 1 will be described below.

In an embodiment, each of the five bond heads 602a-e is coupled to the upper platform 10a of the frame 10 in a manner similar to the method of the bond heads 4, 6 of FIG. However, each of the joint heads 602a-e of Fig. 6 is positioned slightly different from the joint heads 4, 6 of Fig. 1. Specifically, each of the joint heads 602a-e rotates about 90 ^° with respect to the joint heads 4, 6. Thus, the engagement brakes of the bond heads 602a-e can be positioned side by side with each other without any engagement slide guides therebetween. Thus, the distance between adjacent bond heads can be reduced and the bond heads 602a-e can be positioned more closely together. For example, this can be clearly seen by comparing the joint head of Fig. 6 with the joint head of Fig. 1. Alternatively, each of the bond heads 602a-e of Figure 6 can be positioned similar to the bond heads 4, 6 of Figure 1. In an embodiment, the fixed axes of the bond heads 602d and 602e may be closer together than the distance d of FIG. In Figure 6, the distance between adjacent bond heads can vary in different embodiments. Moreover, the distance between the bond heads in different pairs of adjacent bond heads can be varied in different embodiments. For example, the distance between the bond heads 602a and 602b can be different than the distance between the bond heads 602c and 602d. In other embodiments, more or less than five bond heads may be coupled to the upper platform 10a of the frame 10.

In an embodiment, the shape of the joint table 8 and the rod 12 may vary based on the number of joint heads. For example, in the embodiment of Figure 1 having only two joint heads 4, 6, the joint table 8 can be relatively narrow because it needs to span the two joint heads 4, 6. On the other hand, in the embodiment of Figure 6 having five bond heads 602a-e, the bond stage 8 can be relatively wide because it needs to span five bond heads 602a-e. In an embodiment, the length and/or width of the landing table 8 may depend on the number and arrangement of the bond heads. Moreover, the shape of the rod 12 may vary based on the shape of the joint table 8. In an embodiment, the length/width of the rod 12 may be proportional to the length/width of the joint table 8. For example, when the joint table 8 is wide, the rod 12 can be wide, and when the joint table 8 is narrow, the rod 12 can be narrow. Further, the size of the frame 10 may vary based on the number of joint heads. For example, upper platform 10a and lower platform 10b may become wider or narrower to accommodate a greater or lesser number of bond heads.

A greater number of bond heads can be used to speed up the joining process and improve joint efficiency. Furthermore, the distance between adjacent bond heads can also be determined by the size of the substrate to be received on the bond table 8.

Figure 7 illustrates an apparatus 700 for bonding a semiconductor wafer to a substrate in accordance with an embodiment. The embodiment of Figure 7 can bond a semiconductor wafer to one or more substrates. Device 700 can include two devices 702a and 702b arranged side by side. Each of devices 702a and 702b can be similar to device 600 of Figure 6. Additional features of device 702a are described below with respect to device 600 of FIG.

In an embodiment, device 702a includes a feed (or chip feed or wafer feed) 720a. Feed device 720a includes a wafer tray 722a coupled to frame 10 of device 702a by two support arms 724a and 726a. Specifically, the wafer tray 722a is generally rectangular in shape having a length extending across the entire joint head group, the support arm 724a is attached to one end of the wafer tray 722a and the upright 10d of the frame 10, and the support arm 726a is attached to the wafer tray 722a. The other end is on the support 10c of the frame 10. In use, the wafer tray 722a can be configured to slide along the length of the support arms 724a, 726a such that the wafer tray 722a can be moved between a loading position and a feeding position. In the loading position, the wafer can be placed on the wafer tray 722a as will be described below. In the feed position, the wafer can be presented to bond heads 602a-602e. In particular, in the feed position, wafer disk 722a can be positioned directly below bond heads 602a-e such that bond heads 602a-e can be activated to obtain wafers positioned on wafer disk 722a on corresponding bonding tools (eg, Figure 218). For example, each of the bond heads can include a suction device that aspirates the wafer positioned on the wafer disk 722a onto the opposing bonding tool upon actuation. In this manner, the wafer can be obtained from the feed device 720a by the bond heads 602a-e. In an embodiment, the feeding device 720a can include a linear motor (ie, a drive mechanism) that is operable to slide the wafer tray 722a between the loading and feeding positions along the support arms 724a, 726a.

In an embodiment, device 700 can include a controller in communication with feed device 720a. In use, the controller can exchange electrical signals with the feed device 720a to communicate with the feed device 720a and control the feed device 720a. For example, the controller can control the movement of the wafer tray 722a between the loading and feeding positions. In an embodiment, the controller may send an instruction to the feeding device 720a indicating how the feeding device 720a is operating. Feed device 720a can send feedback data to the controller to assist the controller in controlling the operation of feed device 720a.

In an embodiment, device 702b also includes a corresponding feed device 720b similar to feed device 720a of device 702a. In use, the devices 702a, 702b can be moved as one unit or independently of each other.

In an embodiment, apparatus 700 includes a loading mechanism for loading wafers onto feed device 720a and feed device 720b from wafers 730 included in wafer container 732.

In an embodiment, the loading mechanism includes a flipper (or chip flipper or wafer flipper) 734. The flipper 734 has a rod shape of a first end portion 736a and a second end portion 736b. Each of the ends 736a and 736b is equipped with a tool to obtain a wafer from the dicing wafer 730. For example, the tool can include a suction device configured to draw wafers from the dicing wafer 730 onto the flipper 734 when the respective ends 736a, 736b are positioned on the dicing wafer 730. Additionally, the suction device can be configured to maintain suction to hold the wafer on the flipper 734. Additionally, the suction device can be configured to stop pumping to release the wafer from the flipper 734. In other embodiments, the suction device can be replaced by a mechanical tool, such as a grasping device. The flipper 734 is coupled to the servo motor 738 at an intermediate portion of the flipper 734. In use, the servo motor 738 is configured to rotate the flipper 734, for example, to rotate approximately 180°. Thus, the flipper 734 can be moved between the first and second inverted positions. In the first flipped position, the first end 736a is positioned opposite the dicing wafer 730, wherein the second end 736b is positioned opposite the locator (or chip placer or wafer placer) 740a or 740b of the loading mechanism. In the second flipped position, the first end 736a is positioned opposite the placer 740a or 740b, wherein the second end 736b is positioned opposite the dicing wafer 730. The servo motor 738 is configured to brake the flipper 734 between the first and second inverted positions.

In an embodiment, wafer container 732 is operable to move wafer 730. For example, wafer container 732 can be operable to move wafer relative to flipper 734 such that different wafers are extracted by flipper 734 in a separate operation.

In an embodiment, as mentioned above, the loading mechanism also includes placers 740a and 740b. Placer 740a is configured to operate with device 702a, where placer 740b is configured to operate with device 702b. The following will be described in more detail with the placer 740a.

In an embodiment, the placer 740a is equipped with a wafer tool that is obtained from the flipper 734. For example, the tool can include a suction device configured to draw wafers from the first end 736a or the second end 736b onto the placer 740a when the respective ends 736a, 736b are positioned opposite the placer 740a . Additionally, the suction device can be configured to maintain suction to hold the wafer on the placer 740a. Additionally, the suction device can be configured to stop pumping to release the wafer from the placer 740a. In other embodiments, a mechanical tool, such as a gripping device, can be used in place of the suction device. Placer 740a is configured to transport wafers from flipper 734 to wafer tray 722a of setup 702a. Thus, the placer 740a is configured to slide along a track 736 that runs parallel and adjacent to the upper platform of the devices 702a and 702b.

In an embodiment, device 700 includes a housing 740 in which devices 702a and 702b are located. The outer casing 740 includes a base 742 on which the lower platform 10b of the devices 702a and 702b is located. Track 736 forms part of the outer casing and is attached to the outer casing by supports 744 and 746. The supports 744 are parallel and preferably adjacent to the struts 10d of the device 702a, while the supports 746 are parallel and preferably adjacent to the struts 10c of the device 702b.

In an embodiment, in use, the placer 740a slides along the track 736 between the extraction position and the placement position. In the extraction position, the placer 740a is based on the orientation of the flipper 734, opposite the first end 736a or the second end 736b of the flipper 734. In the placement position, the placer 740a is opposite the wafer tray 722a of the device 702a. Thus, it should be understood that the wafer trays 722a slide along their respective support arms 724, 726 such that when in their stowed position, they are opposite the placer 740a in the set position.

In an embodiment, the wafer may be extracted from the dicing wafer 730 by the flipper 734 in accordance with the operations described above. The flipper 734 can be moved from the first flip position to the second flip position such that the wafer level is opposite the placer 740a. The wafers can then be transferred from the flipper 734 to the placer 740a by cooperative operation of their respective wafer acquisition tools (eg, suction or grasping devices). The placer 740a can then be slid along the track 736 from the extraction position to the placement position such that the placer 740a is located opposite the wafer tray 722a in its loading position. The wafer can then be transferred from the placer 740a to the wafer tray 722a. The wafer tray 722a can then be moved from the loading position to the feeding device position such that the wafer is presented to one of the bond heads 602a-e of the device 702a. In this manner, wafers can be transferred from wafer 730 to bond heads 602a-e.

In an embodiment, it should be understood that the placer 740a can position the wafer on a particular portion of the wafer tray 722a that is known to correspond to one of the bond heads 602a-e of the device 702a. In this manner, the wafer can be delivered to a particular one of the bond heads 602a-e of device 702a. In an embodiment, a plurality of wafers may be positioned on the wafer tray 722a before the wafer tray 722a is moved from the loading position to the feeding device position. Thus, the wafer can be loaded simultaneously on multiple of the bond heads 602a-e of device 702a to improve efficiency.

In an embodiment, the placer 740a and the track 736 have cooperating slots and grooves (not shown) to enable the placer 740a to slide along the track 736. In an embodiment, the placer 740a can include a drive unit, such as a motor, to drive its sliding.

It should be understood that the placer 740b and its operation relative to the device 702b are similar to the placer 740a and its operation relative to the device 702a.

In an embodiment, apparatus 700 can include a controller in communication with the loading mechanism and the wafer container. In use, the controller can exchange electrical signals with the loading mechanism and the wafer container to communicate with and control the two components. In an embodiment, the controller can send instructions to the loading mechanism and the wafer container indicating how the components operate. The loading mechanism and wafer container can send feedback data to the controller to assist the controller in controlling its operation.

In an embodiment, device 700 includes corresponding first vision systems 750a and 750b. The first vision system 750a will be described in more detail below.

In an embodiment, the first vision system 750a includes a camera that is preferably mounted on a support arm that extends from the post 10c of the frame 10 of the device 702a. The camera can be oriented such that its field of view can point to the bottom surface of the placer 740a. In this manner, the first vision system 750a can capture an image of the wafer on the placer 740a as the placer 740a carries the wafer from the extraction position to the placement position. Thus, the first vision system 750a can obtain an image of the orientation or position of the wafer on the placer 740a.

In an embodiment, the first vision system 750a can be coupled to a controller (not shown). The controller can include a visual processor that determines the orientation of the wafer. For example, the controller can compare the image taken with the wafer on the placer 740a with the reference image. The difference in wafer position between the two images can be used by the controller to calculate the offset in the wafer position. For example, the controller can receive an image from the first vision system 750a and compare it to a reference image. Based on this comparison, the controller can determine that the wafer has rotated 2o clockwise compared to the reference point.

In an embodiment, the placer 740a can be further configured to rotate the wafer held by the placer 740a. For example, placer 740a can include a motor capable of rotating a wafer. As mentioned above, the controller can be in communication with both the placer 740a and the first vision system 750a. Therefore, after determining the offset of the position of the wafer on the placer 740a, the controller can transmit a signal to the placer 740a to cause the placer 740a to compensate for the offset. For example, if an offset of 2o clockwise rotation is detected, the placer 740a can rotate the wafer 2o counterclockwise. Thus, the orientation of the wafer on the placer 740a can be adapted or changed to conform to the reference point.

In an embodiment, the reference image may include an earlier image taken by the first vision system 750a. In an embodiment, the reference image may include an image of the wafer held by the placer 740a in a predetermined orientation, that is, the wafer is positioned at a desired alignment relative to the placer 740a.

It should be understood that the first vision system 750b and its operation relative to the controller, the placer 740b, and the device 702b are similar to the first vision system 750a and its operation relative to the controller, the placer 740a, and the device 702a. However, it should be noted that, as can be seen in Figure 7, the first vision system 750b is preferably mounted to a support arm extending from the post 10d of the frame 10 of the device 702b.

In an embodiment, device 700 includes corresponding second vision systems 756a and 756b. The second vision system 756a will be described in more detail below.

In an embodiment, the second vision system 756a includes a camera. The second vision system 756a is movable relative to the plurality of bond heads 602a-e and the bond pads 8 of the device 702a. The camera can be configured to measure the position of each of the bond heads 602a-e with reference to the landing station 8. For example, the joint head 602a can be considered. In particular, the second vision system 756a can be configured to move between the bond head 602a and the landing station 8. The second vision system 756a can have a first lens for measuring the position of the bond head 602a relative to a reference point (eg, a predetermined reference position). The second vision system 756a can have a second lens for measuring the position of the landing pad 8 relative to the same reference point.

It should be understood that in order to move the second vision system 756a relative to the plurality of bond heads 602a-e and the landing station 8 of the device 702a, the second vision system 756a can be attached to the support arm extending from the frame 10 of the device 702a. The support arm can be extendable such that the second vision system 756a can be moved in a plane parallel to the bond heads 602a-e and the joint 8 and between the bond heads 602a-e and the joint table 8. The second vision system 756a can include a drive mechanism to enable it to move relative to the bond heads 602a-e and the landing station 8.

In an embodiment, the second vision system 756a is in communication with a controller (not shown). The controller can include a visual processor that determines the alignment between the measured bond head (e.g., 602a) of device 702a and the bond stage 8 based on the image obtained by second vision system 756a. In particular, since bond head 602a is operative to engage the wafer onto the substrate received on bond pad 8, alignment may be referenced to a particular location on bond pad 8. This position can be identified by an alignment mark on the substrate 8 or on the substrate received on the bonding stage 8. The specific position corresponds to a specific position (also referred to as an engagement position) on the substrate to which the wafer obtained by the bonding head 602a is bonded.

For example, the controller can compare the two images captured by the second vision system 756a and calculate two gaps. The first difference may be the difference (ie, the offset) between the image of the bond head 602a and the reference point. The second difference may be the difference between the image of the bonding stage 8 and the reference point (ie, the offset). It should be understood that the offset may be in terms of X, Y, and/or θ movement.

In an embodiment, the controller calculates the total alignment offset of the bond head 602a and/or the bond stage 8. Additionally, the controller can be in communication with the bond head 602a and/or the bond stage 8 and can cause the bond head 602a and/or the bond stage 8 to move in accordance with the determined offset. The movement of the bonding head 602a is described above with reference to the bonding head 201 of Fig. 2. The movement of the joining table 8 is as described above with reference to Fig. 1. For example, it can be determined that based on the image processing of the controller, the bond head 604a should remain in its current position and the landing pad 8 should be moved to the alignment with the bond head 602a. Alternatively, the bond head 602a can be moved while the bond stage 8 can remain stationary. Alternatively, both the bond head 602a and the joint 8 can be moved.

In the embodiment, since the joint table 8 can have a larger amount of movement than the joint head 602a, the joint table 8 moves instead of the joint head 602a. In an embodiment, the landing table 8 can be moved in any X and/or Y direction, and the bond head 602a can perform any θ (ie, angular) movement.

In accordance with the operations described above, the landing station 8 of the device 702a can be aligned with one or more of the bond heads 602a-e of the device 702a. Therefore, it is possible to accurately control the precise position at which the wafer obtained by the bonding head is bonded to the substrate received on the bonding stage. Moreover, once each of the bond heads 602a-e of the device 702a obtains wafers from the feed device 720 and the bond heads 602a-e have been properly aligned with the substrate received on the bond pads 8, each of the bond heads 602a-e can Braking in the vertical (i.e., Z) direction to bond the obtained wafer to the substrate. In particular, the wafer can be obtained, for example, by suction or mechanically and retained on the bond head. The bond head can then be moved toward the substrate such that the wafer is in contact with the substrate. Accordingly, the bond head can release the wafer, for example, by the removal of suction or the braking of a mechanical tool. The releasing step may involve extruding (e.g., at a predetermined pressure) the wafer on the substrate to improve the strength of the bond. Moreover, as described above with reference to FIG. 2, the bonding head can heat the obtained wafer before and during the bonding process to improve the strength of the bonding. After the bonding process, the bond head can release the wafer and retract from the substrate in a vertical direction.

It should be understood that the first vision system 750b and its operation relative to the controller and device 702b are similar to the second vision system 750a and its operation relative to the controller and device 702a.

In an embodiment, although both device 702a and device 702b may operate by the same loading mechanism, device 702a is independent of device 702b. The loading mechanism can include a flipper 734, a servo motor 738, and placers 740a and 740b. Device 702a can have its own plurality of bond heads 602a-e that are independent of a plurality of bond heads 602a-e of device 702b. Device 702a may have its own feed device 740a that is independent of feed device 740b of device 702b. Therefore, device 702a can be used to bond wafers to one substrate and device 702b can be used to bond wafers to another substrate. However, the wafers of both device 702a and device 702b may be from the same loading mechanism. Moreover, the wafer can be from the same dicing wafer.

In various embodiments, device 700 can include more than two devices according to Figure 6. For example, device 700 can include four such devices 702a-d. The devices can be arranged linearly or in different ways, such as in a square or circular manner. According to the above description, the same loading mechanism can be shared between some or all of the devices 702a-d.

Figure 8 illustrates an apparatus 750 for bonding a semiconductor wafer onto a substrate in accordance with an embodiment. The embodiment of Figure 8 can bond a semiconductor wafer to one or more substrates. Device 750 includes two devices 752a and 752b arranged side by side. Each of the devices 752a and 752b is a device 2 similar to FIG. Thus, devices 752a and 752b are similar to devices 702a and 702b of Figure 7, but contain two bond heads instead of five.

The device 750 of Figure 8 is similar to the device 700 of Figure 7. This is compared to device 700 to describe the difference from device 750.

In an embodiment, device 752a includes two bond heads 4a and 6a, while device 752b includes two bond heads 4b and 6b. In an embodiment, device 752a includes two feed devices 754a and 756a. The feeding device 754a is configured to operate with the bonding head 4a, and the feeding device 756a is configured to operate with the bonding head 6a. Device 752b includes two feed devices 754b and 756b. The feeding device 754b is configured to operate with the bonding head 4b, while the feeding device 756b is configured to operate with the bonding head 6b.

In an embodiment, the feeding device 754a includes a wafer tray 760a attached to a support arm 762a extending from the post 10d of the device 752a. In use, the wafer tray 760a can be moved along the support arm 762a between the loading position and the feeding position. In the loading position, the wafer tray 760a can be located at one end of the support arm 762a that is furthest from the bond head 4a such that the corresponding placer can place the wafer on the wafer tray 760a. In the feeding position, the wafer tray 760a may be located at one end of the support arm 762a closest to the bonding head 4a such that the wafer tray 760a is directly under the bonding head 4a.

In the embodiment, the feeding device 756a is similar to the feeding device 754a, but is associated with the bonding head 6a instead of the bonding head 4a. However, the support arms of the feeding device 756a extend from the struts 10c of the device 752a rather than extending from the struts 10c. Feeding devices 754b and 756b are similar to feed devices 754a and 756a, respectively, but are associated with bond heads 4b and 6b, respectively, rather than bond heads 4a and 6a.

Parts (a) through 9 (c) of Fig. 9 show a plurality of bonding heads or bonding head groups 801 according to an embodiment. The bond head group 801 can include five bond heads 801a-e coupled to a coupled track 808 with the upper platform 810. In other words, a plurality of bond heads are coupled to the frame by rails 808. In use, each of the bond heads 801a-e can slide along the track 808 to change its position along the upper platform 810. Thus, in an embodiment, the plurality of bond heads are movably coupled to the frame such that the spacing between adjacent pairs of bond heads is adjustable and the plurality of bond heads are linearly disposed.

Sections 9(a) through 9(c) are intended to illustrate the movement of the joint heads 801a-e as one, that is, each of the joint heads 801a-e makes the same movement at the same time.

In an embodiment, each of the bond heads 801a-e in the bond head group 801 is spaced apart from the adjacent bond head by a predetermined distance. The number of bond heads in the bond head group 801 can be different in different embodiments and the distance between adjacent bond heads can be different in different embodiments.

In the embodiment, in the rest position, the joint head group 801 is located above the joint table 802 and spaced apart from the joint table 802. As previously described, the landing 802 can slide over the rod 804 and the rod can slide over the track 805 on the lower platform 806. In use, bonding station 802 is configured to receive a substrate (not shown) and each of bonding heads 801a-e is configured to obtain a wafer and bond the wafer onto the substrate.

In an embodiment, as shown in the portion of Figure 9 (a), the bond head group 801 is preferably configured to overlap the entire width of the bond stage 802. As seen more particularly in the portion of Figure 9(b), it can be seen that the joint head group 801 can be moved as a single unit in a direction perpendicular (i.e., Z) toward the joint table 802. In an embodiment, the track 808 can be coupled to the upper platform 810 by a vertical braking device (ie, a vertical drive mechanism). In use, the vertical braking device can be configured to move the bonding head group 801 toward the bonding station 802, for example, a wafer obtained on the bonding head bonded to the substrate on the bonding stage 802. Additionally, the vertical braking device can be configured to move the bonding head group 801 away from the bonding station 802, for example, to retract the bonding head population from the substrate after bonding the wafer to the substrate. It should be understood that the vertical braking device can act directly on the track 808 to vertically move the head group 801. Alternatively, a bracket may be present between the track 808 and the vertical brake. The vertical brake device can include a linear motor and a drive shaft. In operation, the linear motor can drive the drive shaft to extend the track 808 toward the landing station 802 (ie, away from the upper platform 810) or retract the track 808 from the landing station 802 (ie, toward the upper platform 810). The vertical brake can be in communication with the controller. The controller can be configured to control the operation of the vertical brake device. Therefore, the joint heads 801a-e can be vertically moved together as a unit, that is, vertically moved together in the joint head group 801 at the same time.

In an embodiment, as seen more particularly in the portion of Figure 9(c), the bond head group 801 can be moved as a single unit relative to the joint table 802 in a horizontal (i.e., X and/or Y) direction. The X and Y directions are indicated by arrows in the portion of Fig. 9(c). In an embodiment, the track 808 can be coupled to a horizontal brake (ie, a horizontal drive). In use, the horizontal brake device can be configured to move the bond head group 801 relative to the landing station 802. It should be understood that the horizontal braking device can act directly on the track 808 to move the head group 801 horizontally. Alternatively, a bracket may be present between the track 808 and the horizontal brake. The controller can be configured to control the operation of the horizontal brake device. Therefore, the joint heads 801a-e can be horizontally moved together as a unit, that is, horizontally moved together in the joint head group 801 at the same time.

The bond head 801a will be described in further detail below, but it should be understood that this description is equally applicable to the bond heads 801b-e. The joint head 801a can be more specifically seen in part (a) through section 10 (c) of Fig. 10.

In an embodiment, the bond head 801a can include a linear drive unit 904a coupled to the track 808. The linear drive unit can include a motor and bearing that enables the bond head 902a to move or slide along the track 808. This movement is indicated by the arrow labeled X in the portion (a) of Fig. 10. In an embodiment, linear drive unit 904a is in communication with the controller and is controlled by the controller. The bottom surface of the linear drive unit 904a is coupled to the horizontal moving plate 912a. In an embodiment, the horizontal moving plate 912a is configured to move horizontally (ie, in the X direction) relative to the linear drive unit 904a. This direction of movement is indicated by the arrow labeled X on the portion of Fig. 10(a). Optionally and additionally, the horizontal moving plate 912a is configured to move horizontally (ie, in the Y direction) relative to the linear drive unit 904a. This direction of movement is indicated by the arrow labeled Y on the portion of Figure 10(b). It should be understood that this horizontal (X and / or Y) direction shift is in addition to the horizontal (X and / or Y) direction movement provided by linear drive unit 904a. For example, linear drive unit 904a can be used to provide coarse horizontal (X and/or Y) direction movement, while horizontal movement plate 912a can be used to provide accurate horizontal (X and/or Y) direction movement. The bond head 801a may further include a drive mechanism, such as a motor, to move the horizontally moving plate 912a relative to the linear drive unit 904a. In an embodiment, the drive mechanism is in communication with the controller and is controlled by the controller.

In an embodiment, the angular moving plate 914a is coupled to the bottom surface of the horizontal moving plate 912a by a connecting plate 916a. The connection plate 916a is configured to move horizontally with the horizontal moving plate 912a. The angular moving plate 914a is configured to rotate relative to the connecting plate 916a. Alternatively, the connection plate 916a may be omitted and the angular movement plate 914a is configured to rotate relative to the horizontal movement plate 912a. This direction of movement is indicated by the arrow labeled θ on the portion of Figure 10(c). The bond head 801a may further include a drive mechanism, such as a motor, to move the plate 914a relative to the rotational angle of the connection plate 916a. In an embodiment, the drive mechanism is in communication with the controller and is controlled by the controller. It should be understood that the rotation or angular movement allows the lower portion of the joint head 801a (i.e., the angular movement plate 914a and below) to be perpendicular to the joint head 801a with respect to the upper portion of the joint head 801a (i.e., the connection plate 916a and above) (also It is the Z) axis rotation.

In an embodiment, the bonding heater 920a is coupled to the bottom surface of the angular moving plate 914a to allow the bonding head 801a to heat the wafer obtained by the bonding head 801a. The tip end of the bond head 801a is provided by a bonding tool 918a coupled to the bottom surface of the bonding heater 920a. The bonding head 801a is equipped with a tool for obtaining a wafer. The tool can include a suction device or a grasping device to allow the bonding tool 918a to obtain and release the wafer. For example, the suction device can be configured to draw the wafer directly below the tip onto the bonding tool 918a and maintain suction to maintain the wafer in position. The suction device can be configured to stop to release the wafer from the bonding tool 918a. It should be understood that the bonding heater 920a is capable of heating the wafer obtained by the bonding tool 918a.

It should be understood that the arrangement of the horizontal moving plate 912a, the angular moving plate 914a, and the engagement heater 920a in the bond head 801a may be different in different embodiments.

In an embodiment, a plurality of the joint heads 801a-e can be moved integrally in the X, Y, Z, and θ directions, that is, they can make the same movement at the same time. Additionally or alternatively, one or more of the bond heads 801a-e can be moved in the X, Y, Z, and theta directions independently of the other bond heads of one or more of the bond heads 801a-e. That is, each bond head can include separate horizontal, vertical, and angular drive mechanisms that are controlled by the controller.

Parts (a) and 11 (b) of Fig. 11 show the joint head group 801 including the joint heads 801a-e. As described above, the bond head group 801 can be used to bond semiconductor wafers to devices on the substrate.

As mentioned above, in the embodiment, the joint heads 801a-e of the joint head group 801 are linearly arranged on the rail 808. Specifically, each of the bond heads 801a-e is configured to slide along the track 808. Each of the bond heads 801a-e includes a linear drive unit that enables it to slide along a track 808 from one particular position to another. Each of the bond heads 801a-e can be in communication with a controller. The controller can be configured to control the operation of the bond heads 801a-e. Thus, each of the bond heads 801a-e can be controlled by the controller to slide along the track 808 between two or more specific positions.

As seen more particularly in part (a) of Figure 11, in the embodiment, the bond heads 801a-e of the bond head group 801 slide over the track 808 to change the spacing between adjacent bond heads, such as 801a and 801b. For example, a certain pitch may be necessary to separate the wafers bonded to the substrate by a certain distance. Specifically, the bonding positions of the wafers on the substrate can be separated by a certain distance, so that the wafers must be separated by a certain distance before bonding can be performed.

In an embodiment, the entire head group 801 can slide along the track 808 as a unit. This operation can be considered as a rough horizontal movement. Alternatively, the individual bond heads can slide independently of some or all of the other bond heads. More precise horizontal movement can be achieved by the operation of the horizontally moving plate of each of the bond heads 801a-e. These horizontal moving plates can be moved as one. Alternatively, the horizontally moving plates of the different bond heads may move differently or independently of those of the other joint heads. In a similar manner, all of the bond heads can perform the same angular movement behavior of their respective angular moving plates. Alternatively, different joint heads can perform different angular movements. In an embodiment, the horizontal and angular movement of each of the bond heads is controlled by a controller.

In an embodiment, the separation of the bond heads 801a-e is performed after the bond heads 801a-e extract wafers from the feed device. When the joining table 802 is moved into a position below the bonding head group 801, the separating action can be simultaneously performed. An advantage of this operation is that the wafers can be placed on the feed device in the same configuration during the bonding regardless of the required spacing between the wafers. For example, the wafers can be placed close together on the feed device, but when bonded to the substrate, the wafers can be more spaced apart. The increased spacing is achieved by the engagement of the bond heads 801a-e on the track 808.

In an embodiment, as seen more particularly in the portion of Figure 11 (b), the engagement head 801e can be moved to one end of the track 808 when only the engagement heads 801a-d are required to impart a joining process. Specifically, the bond head 801e can be slid along the track 808 to one end of the substrate that is not overlaid on the bond stage 802. The remaining bond heads 801a-d can be spaced apart as described above. In an embodiment, the track 808 can be longer than the bond stage 802 and the substrate. In this way, the bond head that slides to the end of the track can be excluded from the joining operation. In other words, the length of the track is resized such that when at least one of the bond heads slides to the end of the track, the relative movement between the at least one bond head and the bond table is limited such that the at least one bond head cannot contact the substrate.

In an embodiment, when all of the bond heads except one (e.g., 801a) have been slid to the end of track 808, the last remaining bond head 801a can be used to bond the wafer to any portion of bond pad 802. Specifically, the joint table 802 can be horizontally moved with respect to the joint head group 801 as described with reference to FIGS. 1 and 9 (a). When only one of the bond head groups 801 (e.g., 801a) does not slide to the end of the track 808, the bond stage 802 can be moved relative to the bond head to engage the wafer at any location on the bond stage. Moreover, in an embodiment, when all of the bond heads except two (eg, 801a and 801b) have been slid to the end of the track 808, the last two remaining bond heads 801a can be used to engage the wafer to any of the bond pads 802. Part. This principle can be applied to other numbers of remaining joint heads.

Fig. 12 shows a plan view of the bonding apparatus 1000 according to the embodiment. Apparatus 1000 includes an upper platform 1002a and a lower platform 1002b. Line 1004 represents the edge of upper platform 1002a. Thus, the upper platform 1002a and the lower platform 1002b are approximately the same width, but the upper platform 1002a is approximately half the depth of the lower platform 1002b. The struts 1006a and 1006b, indicated by dashed lines, keep the upper platform 1002a parallel to the lower platform 1002b and are spaced apart. Apparatus 1000 includes two bond heads 1008a and 1008b that are coupled to upper platform 1002a. In an embodiment, bond heads 1008a and 1008b represent a plurality of bond heads.

Figure 12 shows the work area 1010 of the device 1000. The work area 1010 includes a surface parallel to the lower platform 1002b, above the surface of the lower platform 1002b, and a plane between the two struts 1006a and 1006b. The work area 1010 is divided into two areas 1012a and 1012b. Region 1012a corresponds to bond head 1008a and region 1012b corresponds to bond head 1008b.

In an embodiment, device 1000 also includes two landing pads 1014a and 1014b. The bonding stage 1014a corresponds to the bonding head 1008a, and the bonding stage 1014b corresponds to the bonding head 1008b. In use, the landing pads 1014a and 1014b are movable relative to the bond heads 1008a and 1008b. Specifically, the landing station 1014a can be moved anywhere in the region 1012a of the work area 1010. On the other hand, the bonding stage 1014b can be moved at any position in the area 1012b of the work area 1010. Therefore, the joint table 1014a can be moved relative to the joint head 1008a such that the joint head 1008a can be engaged at any position of the joint table 1014a. On the other hand, the bonding stage 1014b is movable relative to the bonding head 1008b so that the bonding head 1008b can be bonded to any position of the bonding stage 1014b.

According to the embodiments described above, a plurality of bonding stages may be provided, wherein each bonding stage corresponds to some of the bonding heads. In an embodiment, each of the landing stations may correspond to a different joint head or a different set of joint heads may correspond to each of the other joint stations. In an embodiment, each joint station may correspond to at least some of the joint heads that are identical to the other joint station.

Figure 13 illustrates an embodiment of the bonding sequence 1100 performed by the embodiment apparatus 1200 illustrated in Figures 14a through 14g. Figures 14a through 14g show only portions of device 1200 such that the individual operations in sequence are clearly visible. However, device 1200 is similar to device 2 of Figure 1 and devices 752a and 752b of Figure 8. Thus, apparatus 1200 includes two bond heads 1202a and 1202b that represent a plurality of bond heads. As in Figure 1, the bond heads 1202a and 1202b are coupled to an upper platform (not shown) of the frame. The lower platform 1203 of the frame is parallel to the lower platform 1203 and separated from the lower platform 1203 by struts 1205a and 1205b indicated by dashed lines. The lower platform 1203 includes a landing station (not shown) on which the substrate 1208 is located. As described with reference to Figure 1, the bonding stage can move the substrate onto the lower platform 1203. The bond head can provide vertical, horizontal and angular movement as described above with reference to Figure 2. In an embodiment, the bond head 1202a is movable independently of the bond head 1202b. In an embodiment, the bond head 1202a can be moved integrally with the bond head 1202b.

Some other features of device 1200 are described in detail below.

In an embodiment, feed device 1204a is provided to feed the wafer to bond head 1202a and feed device 1204b to feed the wafer to bond head 1202b. The feeding device 1204a includes a wafer tray 1210a attached to a support arm 1212a extending from a post 1205b. In use, the wafer disk 1210a can be moved along the support arm 1212a between the loading position and the feeding position. When in the loading position, the wafer tray 1210a can be located on one end of the support arm 1212a that is furthest from the bond head 1202a such that a corresponding placer (not shown) can place the wafer on the wafer tray 1210a. When in the feed position, the wafer disk 1210a can be located on one end of the support arm 1212a closest to the bond head 1202a such that the wafer disk 1210a is directly below the bond head 1202a. The feeding device 1204b is similar to the feeding device 1204a, but is associated with the bonding head 1202b rather than the bonding head 1202a. Feeding devices 1204a and 1204b are similar to those of Figure 8.

In an embodiment, vision system 1206 is provided to align wafers obtained on bond heads 1202a and 1202b with specific locations on substrate 1208 received on the bond pads. Vision system 1206 is similar to second vision systems 756a and 756b of Figure 7.

The details of the joining sequence 1100 of Figure 13 are provided below. It should be understood that the operation of device 1200 can be controlled by the controller of device 1200.

Step 1101 can be seen more specifically in Figure 14a. In step 1101, the substrate 1208 is received on the bonding stage. Moreover, the feeding device 1204a is in its loading position and the first wafer 1220 is placed on the feeding device 1204a, for example, by a corresponding placer. Feed device 1204b is in its loading position, but no wafer is placed thereon. The bond heads 1202a and 1202b are located in an idle position that is fully retracted from the landing station, that is, completely moved to the upper platform. The vision system 1206 is located in an idle position intermediate the lower platform 1203 and away from one of the bond heads 1202a or 1202b.

Step 1102 can be seen more specifically in Figure 14b. At step 1102, the landing station moves the substrate 1208 to a position below the bond head 1202a. The position of the bond stage depends on the precise location on the substrate 1208 where the first wafer 1220 will be bonded by the bond head 1202a. As can be seen on Figure 12b, in this case, the first wafer 1220 is bonded to the lower right corner of the substrate 1208 as seen on Figure 14b. Feeding device 1204a is then moved from its loading position to its feeding position below bonding head 1202a. Once in the feed position, the bond head 1202a, exemplarily, extracts the first wafer 1220 from the feed device 1204a by suction. Alternatively, after the bond head 1202a extracts the first wafer 1220 from the feed device 1204a, the bond table moves the substrate 1208 to a position below the bond head. Subsequently, the second wafer 1222 is placed on the feeding device 1204b, for example, by a corresponding placer.

Step 1104 can be seen more specifically on Figure 14c. At step 1104, the empty feed device 1204a is moved back to its loading position. Vision system 1206 moves between bond head 1202a and substrate 1208. The vision system 1206, in conjunction with the controller, then determines the movement required by the bonding station and/or the bonding head 1202a to align the first wafer 1220 with the first wafer bonding location on the substrate 1208. The bonding stage and/or bonding head 1202a is then moved to align the first wafer with the first wafer bonding position. Subsequently, the feeding device 1204b is moved from its loading position to a feeding position below the bonding head 1202b.

The process of aligning the first wafer 1220 with the first wafer bonding position will be explained in more detail with reference to Figure 14d.

Figure 14d illustrates how the vision system 1206 is operable to align the first wafer 1220 obtained by the bond head with the first wafer bond position on the substrate 1208, in accordance with an embodiment. In an embodiment, the camera of vision system 1206 can include two lenses. The first lens of the camera of vision system 1206 is the location for measuring first wafer 1220 on bond head 1202a. The second lens of the camera of vision system 1206 is the location for measuring the first wafer bonding location on substrate 1208. As mentioned above, the bonding location can be identified by an alignment mark (or fiducial mark) on the substrate 1208. The alignment marks are indicated by a cross mark on the 14th chart. As can be seen on Figure 14d, the first wafer 1220 is intended to be bonded such that the two diagonal corners 1220a and 1220b of the first wafer 1220 are aligned with the two alignment marks 1208a and 1208b, respectively. Alternatively, an alignment mark (or fiducial mark) may also be present on the first wafer 1220. The first wafer 1220 is intended to be bonded such that the alignment marks of the first wafer 1220 are aligned with the alignment marks on the substrate 1208, respectively. Thus, in a first operation, vision system 1206 moves to capture an image of first wafer 1220 on bond head 1202a on substrate 1208. In a second operation, vision system 1206 first moves to position 1206a to capture an image of the first of two alignment marks 1208a. Visual system 1206 then moves to position 1206b to capture an image of the second of two alignment marks 1208b. The vision system 1206 then returns to its idle position. So, a total of three images are captured. Alternatively, vision system 1206 can be moved to capture an image of first diagonal corner 1220a of first wafer 1220. Next, vision system 1206 moves to capture the second diagonal corner 1220b of first wafer 1220. So, a total of four images are captured. Each image can be compared to a reference location to determine if the first wafer 1220 is aligned with the first wafer bonding location. If the alignment is incorrect, the offset is calculated and the landing pad and/or bond head 1202a is moved to the alignment.

Step 1106 can be seen more specifically in Figure 14e. At step 1106, the second wafer is extracted from the feeding device 1204b by the bonding head 1202b by, for example, suction. The empty feed device 1204b is then moved back to its loading position. Vision system 1206 moves between bond head 1202b and substrate 1208. The vision system 1206, in conjunction with the controller, then determines the desired movement of the bonding station and/or the bonding head 1202b to align the second wafer with the second wafer bonding location on the substrate 1208. The bonding station and/or bonding head 1202b is then moved to align the second wafer with the second wafer bonding position. This process is similar to that described above with respect to aligning the first wafer with the first wafer bonding position.

The first wafer on bond head 1202a is then bonded to substrate 1208 at a first wafer bonding location. Specifically, the bond head 1202a is moved vertically (ie, in the Z direction) toward the substrate 1208 until the first wafer is in contact with the substrate 1208. This operation engages the first wafer to substrate 1208. The head 1202a is then bonded, for example, by stopping the suction, releasing the first wafer. Bonding head 1202a then moves vertically upwardly away from substrate 1208 toward the upper platform. Next, the third wafer 1224 is placed on the feeding device 1204a in its loading position.

In an embodiment, the contact between the first wafer and the substrate can be detected by a sensor device of the bond head 1202a, such as a displacement or force sensor. In use, the sensor device of the bond head 1202a can detect the resistance at which the point of vertical downward movement occurs. This can indicate that the first wafer has been in contact with the substrate.

In an embodiment, the bond head 1202a is further configured to press the first wafer 1220 down onto the substrate 1208, that is, by applying pressure. For example, the sensor device can recognize that the first wafer 1220 has been in contact with the substrate, but will likely cause the bond head 1202a to increase its force to move downward. In this manner, pressure can be applied to the first wafer 1220 to improve the bond between the first wafer 1220 and the substrate 1208. The operation of the bond head 1202a can be controlled by a controller. In an embodiment, the pressure may be applied for a predetermined period of time and/or with a predetermined force. The predetermined time period and/or force can be defined by the controller. The predetermined time period and/or force may vary between different embodiments and between different process steps in the same embodiment.

In an embodiment, when the first wafer 1220 is held by the bond head 1202a and/or when the first wafer 1220 is bonded to the substrate 1208, the bond head 1202a is further configured to heat the first wafer 1220. The bonding head 1202a can use the bonding heater as described above with reference to FIG. Heating the first wafer 1220 prior to contacting the first wafer 1220 with the substrate 1208 or when contacting the first wafer 1220 with the substrate 1208 can cause solder to appear on the first wafer 1220 to enter a molten state. Once the first wafer 1220 is released, the bonding heater of the bond head 1202a can be stopped so that the bonding tool can be cooled prior to obtaining another wafer.

Step 1108 can be seen more specifically in Figure 14f. At step 1108, the landing station moves the substrate 1208 to the next engaged position below the bond head 1202b. Specifically, as seen in FIG. 14f, the next bonding position is a second wafer bonding position that may be located at the lower left of the substrate 1208. Therefore, the bonding stage moves the substrate 1208 such that the second wafer bonding position is directly below the bonding head 1202b. Next, the vision camera 1206 is used to ensure alignment of the second wafer 1222 on the bond head 1202b with the second wafer bond position of the substrate 1208, as described above. If desired, the landing pad and/or bond head 1202b is moved to achieve alignment. Subsequently, the feeding device 1204a is moved from its loading position to its feeding position.

Step 1110 can be seen more specifically in Figure 14g. At step 1110, a third wafer 1224 is obtained from bond head 1202a from feed device 1204a in its feed position. Feed device 1204a then moves back to its loading position. The vision system 1206 then moves to the bond head 1202a to prepare for the alignment of the bond head 1202a. Next, the second wafer 1222 on the bond head 1202b is bonded to the substrate 1208 at the second wafer bonding position. Specifically, the bond head 1202b is moved vertically (ie, in the Z direction) toward the substrate 1208 until the second wafer 1222 is in contact with the substrate 1208. This operation bonds the second wafer 1222 to the substrate 1208. Subsequently, the bonding head 1202b, for example, releases the second wafer 1222 by stopping the suction. Bonding head 1202b then moves vertically upward toward the upper platform and away from substrate 1208. The bonding of the second wafer 1222 by the bonding head 1202b is similar to the bonding of the first wafer 1220 by the bonding head 1202a. Moreover, the feed device 1204b receives the fourth wafer 1226 when in its loading position.

The above described operation completes one cycle of the bonding process. According to the process described above, two wafers have been bonded to the substrate. The first wafer 1220 is joined by the bond head 1202a and the second wafer 1222 is joined by the bond head 1202b.

After step 1110, at step 1112, a determination is made as to whether other wafers need to be bonded to the substrate. If no further bonding is required, the bonding process 1100 ends. However, if further engagement is required, the operations 1104 through 1110 described above are repeated. However, to prepare the apparatus 1200 for operation 1104, the substrate 1206 moves the underside of the bond head 1202a such that the third wafer bond location is directly below the third wafer 1224.

When steps 1104 through 1110 are repeated, operation with respect to first wafer 1220 is now associated with third wafer 1224, while operation with respect to second wafer 1224 is now associated with fourth wafer 1226. It should be noted that the operations described above have introduced both the third wafer 1224 and the fourth wafer 1226. Moreover, the operation will introduce a new fifth wafer and a new sixth wafer. Thus, it can be seen how the bonding sequence described above can be used to bond any number of wafers onto the substrate 1208.

Figure 15a shows a top view of device 1300. Only portions of device 1300 are shown such that various operations of device 1300 can be more clearly explained. Apparatus 1300 is similar to apparatus 1200 of Figures 14a through 14g. However, device 1300 has the following differences.

In an embodiment, device 1300 includes five bond heads of bond heads 1307a-e instead of two bond heads 1202a and 1202b. Further, the joint head group is similar to the joint head group 801 of the portion (a), the figure 9 (b), the section 11 (a), and the section 11 (b) of Fig. 9, and the joint heads 1307a-e Each of them is similar to the joint heads 902a-e of the portion of Fig. 9 (a), Fig. 9 (b), and 10 (a) through 10 (c). Therefore, the joint heads 1307a-e are mounted on the rail and slidable on the rail. In this way, the spacing between a pair of adjacent bond heads is variable.

In an embodiment, device 1300 includes feed device 1309 that is capable of feeding a wafer to each of bond heads 1307a-e, rather than each bond head (1202a and 1202b) having individual feed devices (1204a and 1204b). Feed device 1309 includes a wafer disk 1310 that generally has a rectangular shape that extends across the length of the entire bond head group. One end of the wafer disk 1310 is attached to a support arm 1312a extending from the struts 1205a. The other end of the wafer disk 1310 is attached to a support arm 1312b extending from the struts 1205b. In use, the wafer disk 1310 can be moved along the support arms 1312a and 1312b between the loading position and the feeding position. When in the loading position, the wafer tray 1310 can be located at one end of the support arms 1312a and 1312b furthest from the bond heads 1307a-e such that a corresponding placer (not shown) can place the wafer on the wafer tray 1310. When in the feed position, the wafer disk 1310 can be located at one end of the support arms 1312a and 1312b closest to the bond heads 1307a-e such that the wafer disk 1310 is directly below the bond heads 1307a-e. The feeding device 1309 can be the same as the feeding devices 720a and 720b of Fig. 7.

In an embodiment, the device includes a substrate 1303 instead of a substrate 1208. The two substrates can be substantially identical.

In an embodiment, in use, device 1300 can operate as follows.

In an embodiment, the feeding device 1309 can be configured in its loading position. The wafer can be placed on the wafer disk 1310, for example, by one or more corresponding placers (not shown). In an embodiment, five wafers may be equally spaced along wafer disk 1310, with each wafer corresponding to a different bond head in bond heads 1307a-e. This can be seen on wafer 1514a-e on Figure 15a. In an embodiment, the spacing between adjacent wafers 1314a-e may be the same as the spacing between adjacent bond heads 1307a-e.

In an embodiment, the feeding device 1309 can be moved from its loading position to its feeding position. In the feed position, bond heads 1307a-e can obtain wafers 1314a-e from wafer disk 1310, for example, by suction. Feeding device 1309 can then return to its loading position. At this time, more wafers can be loaded on the wafer tray 1310.

In an embodiment, the bonding station can move the substrate 1303 to a position below the bonding heads 1307a-e. Specifically, each bond head 1307a-e carries a different one of the wafers 1314a-e and the substrate will have a corresponding wafer bond location for each wafer 1314a-e. Therefore, the position of the substrate 1303 is intended to be aligned with its respective wafer and wafer bonding locations. This positioning can be controlled by the controller.

In an embodiment, although the above operations are intended to align the wafer bonding locations with their respective wafers, the alignment may not be sufficiently accurate. Therefore, vision system 1206 can be moved between bond heads 1307a-e and substrate 1303 to determine alignment between each of wafers 1314a-e and their respective wafer bonding locations. As before, the alignment marks on the substrate 1303 can be used to provide reference points on the substrate 1303. The result of this process can be a series of offset calculations. The offset can be provided for each of the bond heads 1307a-e and the landing pad. The offset may indicate the movement required for the bond head to align the wafers 1314a-e with their respective mating positions on the substrate 1303. The bond head offset can define X, Y, and/or θ movement. The X movement can be provided by moving the joint head on the track and/or by using its horizontally moving plate. The joint offset can define the X and Y movements. Once the required offset movement is made, the engagement can begin.

In an embodiment, each of the bond heads 1307a-e can move vertically toward the substrate 1303. Once the wafer (e.g., 1314a) is in contact with its mating position on the substrate 1303, vertical movement for a given bond head (e.g., 1307a) may cease. Once the bond head is in contact with the substrate to improve bond strength, the bond head can apply pressure (ie, squeezing force) onto the wafer. The bond head can heat the wafer prior to the bonding operation and/or during the bonding operation to improve bonding strength. Once the wafer is bonded to the substrate, the bond head is released, for example, by stopping pumping. The bond head then moves vertically away from the substrate 1303 and moves toward the upper platform to which the bond head is coupled. It should be understood that the joint heads 1307a-e can move together as one unit or vertically independently of each other.

In an embodiment, once all of the bond heads 1307a-e have completed engagement, in another expected joint operation, the feed device 1309 can be used again to feed a new wafer to the bond heads 1307a-e.

In an embodiment, all of the bond heads 1307a-e can be used to bond the wafer to the substrate 1303 in a given bonding operation. In another embodiment, one or more bond heads may not be used to bond the wafer to the substrate. For example, the wafers may not be loaded on feed devices for certain bond heads and such bond heads may not be able to perform any bonding operations.

Figure 15b illustrates the further operation of device 1300. Figure 15b only illustrates the portion of device 1300. Specifically, only the bonding heads 1307a-e and the substrate 1303 are shown.

In an embodiment, the pre-engaged configuration of the bond heads 1307a-e is indicated by a dashed line (ie, a dotted line). In a pre-engaged configuration, the spacing between the bond heads 1307a-e can be relatively small, that is, adjacent bond heads can be brought together. The joint configuration of the joint heads 1307a-e is indicated by a solid line. In the engaged configuration, the spacing between the bond heads 1307a-e can be wider than in a pre-engaged configuration, that is, adjacent bond heads can be spaced further apart. It should be understood that this operation can be achieved by sliding the bond heads 1307a-e on the track as described with reference to Figures 9 through 11.

In an embodiment, the spacing between adjacent bond heads 1307a-e can be set according to alignment marks on substrate 1303. In particular, the substrate 1303 can comprise a grid of cross-shaped alignment marks. The grid may contain multiple columns of alignment marks and multiple rows of alignment marks, for example, three columns and ten rows. Two exemplary alignment marks 1304a and 1304b are shown on page 15b. The two alignment marks 1304a and 1304b may be adjacent alignment marks in the same column. The spacing between the two alignment marks 1304a and 1304b may define the cell pitch of the substrate 1303. The unit spacing can be approximately 20 mm. The spacing between each pair of adjacent markers in the same column can be equal to the cell spacing. The spacing between each pair of adjacent markers in the same row can be equal to the cell spacing.

In an embodiment, each alignment mark can indicate the bonding location of the wafer. Additionally or alternatively, a plurality of alignment marks may indicate the location of the bonding of a single wafer (e.g., as in Figure 14d). Additionally or alternatively, only some of the alignment marks may indicate a portion of the engagement or engagement position. In the embodiment of Figure 15b, each alignment mark indicates the center of the engaged position. How the device 1300 is engaged in this case is explained below.

In an embodiment, in the bonded configuration, the spacing between adjacent bond heads in bond heads 1307a-e is set to double the cell pitch. In the first bonding operation, each bonding head 1307a-e can bond the wafer to the outermost one of the alignment marks of the uppermost column of the substrate 1303. Thus, after this first bonding operation is completed, the alignment marks of the alignment marks in the uppermost column will have wafers bonded thereto. In the second bonding operation, the gaps in the uppermost column will be filled such that each of the alignment marks in the uppermost column of alignment marks will have a wafer bonded thereto. This process will then continue for each of the alignment marks. In this manner, the wafer can be bonded to each of the alignment marks on the substrate 1303 by bond heads 1307a-e. In an embodiment, a different order may be used, for example, a first bonding operation may be performed sequentially for each column and then a second bonding operation may be performed sequentially for each column.

Figure 15c illustrates further operation of device 1300 in accordance with an embodiment. Figure 15c shows a further substrate 1350 comprising three columns of alignment marks and eight rows of alignment marks. Since the apparatus 1300 includes five joint heads 1307a-e and has eight rows, one of the joint heads can be excluded from the joint operation. Therefore, in the embodiment, as described above with reference to section 11 (b), the joint head 1307e can be removed from the joining operation by sliding it to one end of the rail. Thus, the dashed line indicates the pre-engaged configuration in which all of the bond heads 1307a-e are closely aligned. However, the solid line indicates an engagement configuration in which the joint heads 1307a-d are separated by a double distance of the cell pitch, and the joint head 1307e has moved away from the substrate 1350 such that it is not included in the joining operation. Thus, as described above with reference to FIG. 15b, a similar bonding operation can be performed to bond the wafer to each of the alignment marks on the substrate 1350 using the bonding heads 1307a-d.

Figure 15d illustrates further operation of device 1300 in accordance with an embodiment. Figure 15d shows a further substrate 1360 comprising three columns of alignment marks and eleven rows of alignment marks. Since the apparatus 1300 includes five bond heads 1307a-e and has eleven rows, it utilizes all five bond heads 1307a-e efficiently, rather than moving one or more bond heads to the ends of the track. The joining operation will be identical to the joining operation of Figure 15b; however, the joining head 1307e will be engaged in three rows and the other joining heads 1307a-d will be joined in two rows. Thus, in an embodiment, different joint heads can perform different numbers of joint operations. For example, to bond the last wafer of each column (i.e., the rightmost row), only one wafer can be placed on the wafer tray 1309. The wafer can be located at the same location as the wafer 1314e.

In an embodiment, the spacing between the bond heads 1307a-e can be determined by the controller based on a predetermined algorithm. The algorithm can receive as an input: the number of bond heads of the device, the number of bond locations on the substrate, the spacing between adjacent bond locations, the placement of the bond locations on the substrate. Some or all of these inputs may, for example, be predefined by the operator of the device. Some or all of these inputs may be determined by the vision system of the device. In any event, based on these inputs, the controller can determine the number of bond heads used, the spacing between adjacent bond heads, and the number of joints to be made for each bond head used.

Figure 16 illustrates an embodiment of the bonding sequence 1400 performed by the embodiment of apparatus 1300 illustrated in Figures 17a through 17d. Prior to the start of the bonding sequence, device 1300 has the configuration as described above with reference to Figure 17a.

Step 1402 can be seen more specifically in Figure 17a. In step 1402, the bonding station moves the substrate 1303 to a position below the bond heads 1307a-e such that the wafers are opposite each other in their respective engaged positions. The substrate 1303 includes three columns of alignment marks and eleven rows of alignment marks. Since the apparatus 1300 includes five bond heads 1307a-e and has eleven rows, it utilizes all five bond heads 1307a-e efficiently. The joining operation will be similar to the joining operation of Figure 15d. Therefore, the bonding head 1307e is about to be joined in three rows while the other bonding heads 1307a-d are about to be joined in two rows. As seen in Figure 17a, the bond heads 1307a-e are positioned directly on the most recent alignment marks on the substrate 1303. In addition, there are joint marks on each of the spaced apart alignment marks, but there are two exposed alignment marks on the most rightmost end.

Also in step 1402, the feed device position 1309 is moved from the loading position to the feeding position. Once in the feed position, bond heads 1307a-e will extract different ones of wafers 1314a-e from wafer disk 1310.

Step 1404 can be seen more specifically in Figure 17b. At step 1404, the feeding device 1309 returns to its loading position. Vision system 1206 then inspects the alignment of each wafer 1314a-e on its respective bond head with a wafer corresponding to the bond location (ie, the alignment mark). For each wafer and joint position pair, the offset is determined by the controller using the image captured by the vision system. The offset indicates what movement the bond head and/or the bond table requires to align the wafer with its corresponding engagement position. For example, vision system 1206 can first capture an image of wafer 1314a on bond head 1307a. Next, the vision system can capture an image of the joint location on the substrate 1303. The necessary X, Y and/or θ movement required by the wafer to align it with the joint position can be calculated by the controller. The controller can then move the bond head 1307a in the X, Y, and/or θ directions by the necessary amount to align the wafer with the joint position. This process can then be repeated for other bond heads 1307b-e. In an embodiment, images of a plurality of wafers and joint locations can be captured, and subsequently, multiple offsets can be determined and aligned. At the end of this process, each wafer 1314a-e is aligned with its corresponding bonding location on substrate 1303. In the embodiment, the bonding stage can be moved in addition to the bonding heads 1307b-e.

Step 1406 can be seen more specifically in Figure 17c. At step 1406, vision system 1206 moves away from bond heads 1307a-e to its idle position. Each bond head 1307a-e is moved vertically to bond its wafer to the substrate. Each bond head 1307a-e then releases its wafer and moves away from the substrate and moves vertically toward the upper platform. The joint heads 1307a-e can be moved vertically as a unit. This operation can be similar to the operation as described above with reference to step 1106 of FIG. Next, new wafers 1370a-e are placed on feed device 1309 to prepare for subsequent bonding operations. For example, new wafers 1370a-e can be bonded to the same column of alignment marks or different columns of alignment marks.

After step 1406, decision block 1408 appears. In decision block 1408, it is determined if the engagement is complete. If the joining is completed, the joining process ends. Alternatively, if the engagement is not completed, the joining step will return to step 1402.

It should be understood that each of the bond heads 1307a-e can move together as one unit or the bond heads can move independently of each other. For example, all of the bond heads 1307a-e can be moved in the X, Y, and/or θ directions at the same time, that is, together. Alternatively, one of the bond heads can be moved in the X, Y and/or θ directions independently of the at least one other bond head. Alternatively, movement in one direction may be performed by the joint head, but movement in the other direction may be performed independently by different joint heads. For example, vertical (ie, Z-direction) movement can be performed integrally by all of the joint heads. However, horizontal (i.e., X and / or Y directions) and / or angular (i.e., θ direction) movement can be performed by each of the joint heads independently of the other joint heads.

Figure 18 illustrates an alternate operation of the visual camera 1206 of device 1300, in accordance with an embodiment. This operation is similar to the operation of Figure 14d. However, the operation of Figure 14d is for the alignment of the individual wafers with their respective wafer bonding locations, while the operation of Figure 18 is for the alignment of the five wafers (1314a-e) with their respective bonding locations on the substrate 1600.

In an embodiment, as seen in FIG. 18, an attempt is made to bond wafer 1314a such that the two diagonal corners of wafer 1314a are respectively aligned with the two alignment marks on substrate 1600. Thus, in a first operation, vision system 1206 moves to capture an image of wafer 1314a on bond head 1307a on substrate 1600. In a second operation, vision system 1206 first moves to position 1602 to capture an image of the first of the two alignment marks. Visual system 1206 then moves to position 1604 to capture an image of the second of the two alignment marks. At this point, vision system 1206 then continues to move to perform similar processing on wafer 1314b and the joint location. Thereafter, this process is repeated for each of the remaining wafers, that is, the wafers 1314c, 1314d, and 1314e. The vision system 1206 then returns to its idle position. The path of the vision system 1206 is indicated by arrows on Figure 18.

In view of the above, a total of three images were captured for each wafer and joint position pair. Each image can be compared to a reference position to determine if the wafer is aligned with its corresponding joint position. If the two are not aligned, the offset is calculated and the landing table and/or the corresponding bond head are moved to achieve alignment. This process is similar to the process as described with reference to Figure 14d.

It should be noted that once the corresponding image is captured, the controller can move each bond head to the alignment. Alternatively, the controller may cause some or all of the bond heads to wait for image capture for all of the bond heads before moving them to the alignment.

Figure 19 is a flow diagram of a method 1700 for bonding in accordance with an embodiment. Method 1700 can be adapted to bond a plurality of semiconductor wafers onto a substrate. Method 1700 can be performed using the apparatus of Figure 1 or the apparatus of Figures 14a through 14g. For the sake of clarity, this method will be described with reference to Figure 1.

At step 1702, the substrate is received on the bonding station 8. For example, the substrate can be placed on the landing table either manually or with some mechanical means.

At step 1704, the wafer is obtained by the first bond head 4. The wafer may be a first wafer to be bonded in accordance with this method. The wafer can be obtained from the bond head 4 as described above. For example, a loading mechanism can be used to transfer the wafer from the wafer to the feeding device and the feeding device can be used to present the wafer to the bonding head.

In step 1706, the first bond head 4 and the bond stage 8 are moved relative to each other to align the first wafer on the first bond head 4 with the substrate on the bond stage 8. The joint head 4 and/or the joint table 8 can be moved. The vision system can be used to determine what movements are necessary to achieve alignment. This has been described in detail above.

At step 1708, the next wafer is obtained by the second bond head 6. The next wafer may be a second wafer to be bonded in accordance with this method. The wafer can be obtained from the bond head 6 as described above. For example, a loading mechanism can be used to transfer the wafer from the wafer to the feeding device and the feeding device can be used to present the wafer to the bonding head.

At step 1710, the first wafer is bonded to the substrate. Specifically, the first bonding head 4 is moved toward the bonding stage 8 to bring the first wafer into contact with the substrate. Then, the bonding head 4 releases the first wafer. Subsequently, the first bonding head 4 is retracted from the landing stage.

In step 1712, the second bond head 6 and the bond stage 8 are moved relative to each other to align the second wafer on the second bond head 6 with the substrate on the bond stage 8. The joint head 6 and/or the joint table 8 can be moved. The vision system can be used to determine what movements are necessary to achieve alignment. This has been described in detail above.

At step 1714, the second wafer is bonded to the substrate. Specifically, the second bonding head 6 is moved toward the bonding stage 8 to bring the second wafer into contact with the substrate. Then, the bonding head 6 releases the second wafer. Subsequently, the second bonding head 6 is retracted from the landing stage.

At step 1716, if the bonding is complete, that is, only two wafers are to be bonded to the substrate, the method ends. On the other hand, if further bonding is required, the process flow returns to step 1704. However, this method stage bonds the third wafer and the fourth wafer onto the substrate. Additional stages of the method can be performed to bond additional wafers onto the substrate. For example, the method can be used to bond ten, twenty or one hundred wafers onto a substrate. In addition, some method steps may not be performed in some stages such that odd numbers of wafers can be bonded to the substrate.

In an embodiment, after the first bonding head 4 is retracted from the bonding stage following the bonding of the first wafer, the third wafer is obtained on the first bonding head 4. In an embodiment, after the second bonding head 6 is retracted from the bonding stage following the bonding of the second wafer, the fourth wafer is obtained on the second bonding head 6.

In an embodiment, the first bonding head 4 heats the obtained wafer before releasing the wafer after bonding. For example, once the wafer is obtained, the bond head 4 can begin to heat the wafer. Alternatively, the bonding head 4 may begin to heat the wafer after the alignment of the wafer is in progress or completed. The second bond head 6 can operate in a corresponding manner.

In an embodiment, after the bonding step, that is, after the wafer is released, the first bonding head 4 can delay obtaining the subsequent wafer. For example, the first bond head 4 may require cooling so that it does not overheat when it acquires a new wafer. Overheating can thermally impact new wafers, which can cause damage to the wafer. The second bond head 6 can operate in a corresponding manner.

In an embodiment, some of the steps of method 1700 can be rearranged. For example, before or during step 1712 and/or step 1714, the first bond head 4 can obtain a wafer (eg, a third wafer). In an embodiment, the first bond head 4 can obtain a wafer between steps 1712 and 1714. Moreover, the second bonding head 6 can be delayed until the wafer (e.g., the fourth wafer) is obtained after the step 1710.

An advantage of the method 1700 is that one of the bond heads can be cooled and/or heated while the other bond head is in alignment, bonding or wafer acquisition. In this way you can maximize productivity. Specifically, it is not a waste of time waiting for the joint head to cool or heat because this time is just utilized by another joint head to complete the associated operation of the joint.

In the embodiments described above, the bonding station is configured to receive a substrate. In some embodiments, the bonding station can include tools for ensuring receipt of the substrate in a certain orientation. In addition, the bonding station can include tools for ensuring that the substrate does not move once the substrate is received. For example, the surface of the bonding station can include recessed portions that are sized and shaped to match the substrate. Therefore, the substrate can be adapted to the groove to ensure its orientation. Additionally or alternatively, the landing station can include additional mechanical tools (eg, clips or buckles) configured to hold the substrate to the landing station. Moreover, the bonding station can include a magnetic tool configured to adsorb the substrate to the landing station.

The embodiments described above relate to an apparatus or method for bonding a wafer to a substrate. In an embodiment, the wafer is an integrated circuit or a single crystal integrated circuit (also referred to as an IC or microchip). In an embodiment, the wafer is a set of electronic circuits on a small plate of a semiconductor material, such as germanium and gallium arsenide (GaAs). In an embodiment, the substrate can be a strip of material such as tantalum, gallium arsenide (GaAs), ceramic, BT resin, epoxy, FR4 or polymer. In an embodiment, the substrate acts as a substrate on which the semiconductor wafer is deposited. In an embodiment, the substrate may include one or more conductive tracks to transport charge between the substrate and the different wafers bonded to the substrate.

In an embodiment, the wafer and/or substrate may include an intermediate material to bond the wafer to the substrate. For example, the intermediate material can be solder. In operation, the intermediate material can mechanically attach the wafer to the substrate. In addition, the intermediate material can protect portions of the wafer and/or substrate from physical damage. Additionally, the intermediate material can be electrically conductive to facilitate charge flow between the wafer and the substrate.

The embodiments described above are related to devices for bonding semiconductor wafers onto a substrate. This device contains a plurality of bonding heads and bonding stations. Each of the plurality of bond heads is operable to obtain and release the wafer. The bonding station is operable to receive the substrate. Moreover, each of the plurality of bond heads is relatively movable relative to the bond stage and is operable to contact the wafer obtained by the bond head with the substrate received on the bond stage and release the wafer to bond the wafer Onto the substrate. In an embodiment, the apparatus can further include a controller in communication with the joint station and each of the plurality of joint heads. Further, the controller may control each of the plurality of bonding heads to relatively move relative to the bonding stage to contact the wafer obtained by the bonding head with the substrate received on the bonding stage, and release the wafer to bond The wafer is on the substrate.

It should be understood that one or more features from one of the above described embodiments may be combined with one or more features from one or more other embodiments of the above described embodiments. One or more new embodiments are contemplated which are covered by the scope of the appended claims.

A person skilled in the art will appreciate that many variations and/or modifications may be made to one or more of the above described embodiments without departing from the scope of the appended claims. Therefore, the embodiments described above are to be considered in all respects

2, 500, 502, 600, 700, 702a, 702b, 750, 752a, 752b, 1000, 1200, 1300‧‧‧ equipment
4, 4', 4a, 4b, 6, 6'', 6a, 6b, 201, 602a, 602b, 602c, 602d, 602e, 801a, 801b, 801c, 801d, 801e, 1008a, 1008b, 1202a, 1202b, 1307a , 1307b, 1307c, 1307d, 1307e‧‧‧ joint head
8, 802, 1014a, 1014b‧‧‧ joint table
10‧‧‧Frame
10a, 10a', 810, 1002a‧‧‧ platform
10a''‧‧‧Second platform
10b, 10b', 806, 1002b, 1203‧‧‧ platform
10c, 10c'', 10d, 10d', 1006a, 1006b, 1205a, 1205b‧‧ ‧ pillar
12, 804‧‧‧ pole
14a, 14b, 16a, 16b, 736, 805, 808‧‧ track
204‧‧‧Bearing brake
206a, 206b‧‧‧ joint sliding guide
208‧‧‧ drive shaft
210‧‧‧ joint plate
212‧‧‧ horizontal mobile tablet
214‧‧‧ angular mobile tablet
216‧‧‧Connecting plate
218‧‧‧ bonding tools
220‧‧‧Join heater
400a, 400b‧‧‧ fixed shaft
402a, 402b‧‧‧ indicates the arrow that moves the head angle
404a, 404b‧‧‧ indicates the arrow that the joint head moves vertically
720a, 720b‧‧‧feeding device
722a, 760a, 1210a, 1210b, 1310‧‧‧ wafer tray
724a, 726a, 762a, 1212a, 1212b, 1312a, 1312b‧‧‧ support arms
730‧‧‧Cut wafer
732‧‧‧ wafer container
734‧‧‧Flipper
736a‧‧‧First end
736b‧‧‧second end
738‧‧‧Servo motor
740‧‧‧Shell
740a, 740b‧‧‧Placer
742‧‧‧Base
744, 746‧‧‧ support
750a, 750b‧‧‧ first vision system
754a, 754b‧‧‧feeding device
801‧‧‧ joint head group
904a‧‧‧Linear drive unit
912a‧‧‧ horizontal mobile tablet
914a‧‧‧ angular mobile tablet
916a‧‧‧Connecting plate
918a‧‧‧ bonding tool
920a‧‧‧Join heater
Line 1004‧‧
1010‧‧‧Workspace
1012a, 1012b‧‧‧ area
1100‧‧‧ Engagement sequence
1101, 1102, 1104, 1106, 1108, 1110, 1112, 1402, 1404, 1406, 1702, 1704, 1706, 1708, 1710, 1712, 1714, 1716‧‧
1206‧‧‧Vision System
1206a, 1602‧‧‧ first image location
1206b‧‧‧second image location
1208, 1303, 1350, 1360, 1600‧‧‧ substrates
1208a, 1208b, 1304a, 1304b‧‧‧ alignment marks
1220a‧‧‧first diagonal corner
1220b‧‧‧second diagonal corner
1220, 1222, 1224, 1226‧‧‧ first to fourth wafers
1309‧‧‧feeding device
1314a, 1314b, 1314c, 1314d, 1314e‧‧‧ wafers
1370a, 1370b, 1370c, 1370d, 1370e‧‧‧ new wafer
1400‧‧‧ joint sequence
1408‧‧‧Decision block
1700‧‧‧ joining method
D‧‧‧distance

The embodiments of the present invention will be better understood and readily apparent from the following description among them:

Figure 1 is a perspective view of an apparatus for joining according to an embodiment;

Figure 2 is a front elevational view of the bond head in accordance with an embodiment;

Figure 3 is a front elevational view of a portion of the apparatus for joining of Figure 1;

Figure 4 is a further perspective view of the apparatus for joining of Figure 1;

Part 5 (a) and (b) are front views of an apparatus for joining according to two different embodiments;

Figure 6 is a perspective view of an apparatus for joining according to an embodiment;

Figure 7 is a perspective view of an apparatus for joining according to an embodiment;

Figure 8 is a perspective view of an apparatus for joining according to an embodiment;

Fig. 9(a) is a front view of a portion of the apparatus for joining according to the embodiment, and Fig. 9(b) is a front view of the joint group of the apparatus of the portion (a) of Fig. 9, and the ninth Figure (c) is a bottom view of the joint group;

Figure 10 (a) is a front view of the joint head of the apparatus for joining in part (a) of Figure 9, and section 10 (b) is a side view of the joint head, and part 10 (c) a bottom view of the joint head;

Fig. 11(a) is a front view of the joint group of the apparatus for joining in the portion of Fig. 9(a) of the first configuration, and part (b) of Fig. 11 is the joint group of the second configuration. front view;

Figure 12 is a plan view of an apparatus for joining according to an embodiment;

Figure 13 is a flow chart of a method for joining according to an embodiment;

14a to 14g are plan views of portions of an apparatus for joining according to an embodiment when operating to perform the method for joining of Fig. 13;

15a to 15d are plan views of portions of an apparatus for joining according to an embodiment;

Figure 16 is a flow chart of a method for bonding in accordance with an embodiment;

17a to 17c are plan views of portions of an apparatus for joining according to an embodiment when operating to perform the method for joining of Fig. 16;

Figure 18 is a plan view of the operation of the vision system in accordance with an embodiment;

Figure 19 is a flow chart of a method for bonding in accordance with an embodiment.

2‧‧‧Devices for joining semiconductor wafers to substrates

4, 6‧‧‧ joint head

8‧‧‧ joint table

10‧‧‧Frame

10a‧‧‧Upper platform

10b‧‧‧lower platform

10c, 10d‧‧‧ pillar

12‧‧‧ pole

14a, 14b, 16a, 16b‧‧‧ track

Claims (27)

An apparatus for joining a semiconductor wafer to a substrate, the apparatus comprising: a frame; a plurality of bond heads coupled to the frame, each of the bond heads being operable to obtain and release a wafer; and a bonding stage, Coupled to the frame and operative to receive a substrate; each of the plurality of bond heads is relatively movable relative to the bond stage and operable to receive the wafer obtained by the bond head Contacting the substrate received on the bonding stage and releasing the wafer to bond the wafer to the substrate. The apparatus of claim 1, wherein at least two of the plurality of bonding heads are operable to move a wafer obtained by integrating the at least two bonding heads with respect to the bonding stage. . The apparatus of claim 2, wherein the at least two joint heads are operable to move in a plane parallel to a plane of the joint table by the at least two joint heads as a whole The wafer. The apparatus of claim 2, wherein the at least two bonding heads are operable to move the wafer obtained by the at least two bonding heads as a unit toward or away from the bonding stage. The apparatus of any of the preceding claims, wherein one of the plurality of bond heads is operable to be relative to one of the other bond heads of the plurality of bond heads The wafer relatively moves a wafer obtained by the one bonding head. The apparatus of claim 5, wherein the one of the bonding heads is operable to move from the plane independent of a plane obtained by the other bonding heads in a plane parallel to a plane of the bonding stage The wafer obtained by the bonding head. The apparatus of claim 5, wherein the one of the bonding heads is operable to move from the one of the bonding heads independently of the wafer obtained by the other bonding heads toward or away from the bonding stage. The wafer obtained. The apparatus of any one of the preceding claims, wherein the plurality of bonding heads are movably coupled to the frame and the plurality of bonding heads are linearly arranged, and wherein the bonding of adjacent pairs The spacing between the heads is adjustable. The apparatus of claim 8 wherein the plurality of bond heads are coupled to the frame by a track and each of the bond heads is operable to slide over the track to adjust the engagement of adjacent pairs The spacing between the heads. The apparatus of claim 9 wherein the length of the track is resized such that when at least one of the bond heads slides to an end of the track, between the at least one bond head and the bond stage The relative movement is limited such that the at least one bond head is incapable of contacting a wafer obtained by the at least one bond head with the substrate. The apparatus of claim 9 or 10, wherein the track is movably coupled to the frame and the track includes an operable drive mechanism to move the track toward or away from the landing station to The plurality of bond heads move toward or away from the landing station. The apparatus of any one of the preceding claims, wherein the frame comprises a first platform and a second platform facing the first platform, the first platform being separated from the second platform by at least one pillar Opened and parallel to the second platform, the plurality of bond heads are coupled to the first platform and the bond pads are coupled to the second platform. The apparatus of claim 12, wherein the joint station is movably coupled to the second platform and the joint station includes an operable drive mechanism for moving in a plane parallel to the second platform The joint table. The apparatus of any of the preceding claims, further comprising a feeding device movably coupled to the frame, the feeding device comprising an actuating mechanism for operating at a loading position Moving the feed device between feed positions, wherein the feed device is configured to receive a wafer in which the feed device is configured to present the wafer to one of the plurality of bond heads The bonding head is such that the one bonding head can obtain the wafer from the feeding device. The apparatus of claim 14, wherein the feeding device is operable to receive at least two of the wafers and present each of the wafers to a different one of the plurality of bonding heads. The apparatus of claim 14 or 15, further comprising an operable loading mechanism for loading a wafer from the wafer onto the feeding device when the feeding device is in the loading position . The apparatus of any of the preceding claims, further comprising a camera movably coupled to the frame, the camera comprising a drive mechanism operable to oppose the plurality of bond heads and An engagement table moves the camera, the camera configured to measure a position of at least one of the engagement heads relative to the engagement table, wherein the at least one engagement head and the engagement table are operable to be based on a position measured by the camera Move to the point where they are aligned. The apparatus of claim 17, wherein the camera is configured to move between the at least one bonding head and the bonding stage, the camera having means for measuring the at least one bonding head relative to a reference point a first lens at a position, and a second lens for measuring a position of the bonding stage relative to the reference point, wherein the at least one bonding head and the bonding stage are configured to be based on the first lens and the second The positions measured by the lenses move to the point where they are aligned with each other. The apparatus of any of the preceding claims, wherein at least one of the plurality of bond heads is operable to heat a wafer obtained by the at least one bond head. The apparatus of any of the preceding claims, wherein at least one of the plurality of bond heads is operable to apply a predetermined pressure to the wafer when the wafer is brought into contact with the substrate on. The apparatus of any of the preceding claims, wherein the at least one of the plurality of bond heads comprises a suction device, wherein when a wafer is presented to the at least one bond head, the pumping A suction device is configured to draw the wafer onto the at least one bond head and maintain suction to hold the wafer on the at least one bond head, and wherein the suction device is configured to stop pumping to release from the at least one bond head The wafer is taken out. The apparatus of any of the preceding claims, further comprising a controller in communication with the joint station and each of the plurality of joint heads, the controller being operable to control Each of the bond heads is relatively moved relative to the bond stage to obtain a wafer and release the obtained wafer. The apparatus of claim 16 further comprising an additional frame, a plurality of additional bond heads coupled to the additional frame, an additional bond stage coupled to the additional frame, and movably coupled to An additional feeding device of the additional frame, wherein each of the additional bonding heads of the plurality of additional bonding heads is relatively movable relative to the additional bonding table and operable to receive a wafer obtained by the additional bonding head Contacting an additional substrate received on the additional bonding stage and releasing the wafer to bond the wafer to the additional substrate, wherein the additional feeding device includes an operable drive mechanism for a loading position and a feeding position Moving the additional feed device between, wherein the additional feed device is configured to receive a wafer in which the additional feed device is configured to present the wafer to the plurality of additional bond heads a bonding head such that the one bonding head can obtain the wafer from the additional feeding device, and wherein the loading mechanism is Operating in the loading position to load a wafer onto the feeding device for presentation to one of the plurality of bonding heads and, when in the loading position, loading a wafer thereon An additional feed device is provided to present one of the plurality of additional bond heads. A method of bonding a plurality of semiconductor wafers onto a substrate, the method comprising: a. receiving a substrate on a bonding pad; b. obtaining a first wafer by a first bonding head; c. moving the substrate relative to each other a first bonding head and the bonding stage to align the first wafer on the first bonding head with the substrate on the bonding stage; d. obtaining a second wafer by a second bonding head; e. facing the The bonding stage moves the first bonding head to contact the first wafer with the substrate and release the first wafer to bond the first wafer onto the substrate, and retract the first bonding head from the bonding stage; f. Moving the second bonding head and the bonding stage relative to each other to align the second wafer on the second bonding head with the substrate on the bonding stage; and g. moving the second bonding head toward the bonding stage to The second wafer is brought into contact with the substrate and the second wafer is released to bond the second wafer to the substrate, and the second bonding head is retracted from the bonding table. The method of claim 24, further comprising: after retracting the first bonding head from the bonding stage, obtaining a third wafer by the first bonding head, and retracting the bonding die from the bonding pad After the second bonding head, a fourth wafer is obtained by the second bonding head. The method of claim 24, wherein the method further comprises: heating the first wafer on the first bonding head before releasing the first wafer on the substrate, and releasing The second wafer on the second bonding head is heated before the second wafer is on the substrate. The method of claim 26, when attached to claim 25, further comprising: after releasing the first wafer on the substrate, delaying the first bonding head to obtain the third wafer To allow the first bonding head to cool, and after releasing the second wafer on the substrate, delay the second bonding head to obtain the fourth wafer to allow the second bonding head to cool.