[go: up one dir, main page]

TW201502458A - Heat dissipating plate and method for fabricating the same - Google Patents

Heat dissipating plate and method for fabricating the same Download PDF

Info

Publication number
TW201502458A
TW201502458A TW102124036A TW102124036A TW201502458A TW 201502458 A TW201502458 A TW 201502458A TW 102124036 A TW102124036 A TW 102124036A TW 102124036 A TW102124036 A TW 102124036A TW 201502458 A TW201502458 A TW 201502458A
Authority
TW
Taiwan
Prior art keywords
metal layer
metal
heat sink
thickness
diamond
Prior art date
Application number
TW102124036A
Other languages
Chinese (zh)
Inventor
Jacky Hong-Gui Chen
Original Assignee
Jacky Hong-Gui Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jacky Hong-Gui Chen filed Critical Jacky Hong-Gui Chen
Priority to TW102124036A priority Critical patent/TW201502458A/en
Publication of TW201502458A publication Critical patent/TW201502458A/en

Links

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A heat dissipating plate comprises a first metal layer, a diamond layer and a second metal layer. The diamond layer is located evenly on the first metal layer. The second metal layer is located on the first metal layer in such a manner that the diamond layer is sandwiched there-between. The characteristic is that, by using a pressing device to press the second and first metal layers in a predetermined high-pressure and high-temperature for a predetermined time period in order to proceed the heat-fusing process, the heat dissipating plate will become an integral structure. The first metal layer is thinner than the second metal layer. The overall thickness of the heat dissipating plate is between 0.1mm~1mm.

Description

散熱片及其製法 Heat sink and its preparation method

本發明是關於一種散熱片及製法,特別是於該散熱片中具有一鑽石微粒子夾層。 The present invention relates to a heat sink and a method of making, in particular, a diamond particle interlayer in the heat sink.

隨著高科技的蓬勃發展,電子元件的體積趨於微小化,而且單位面積上的密集度也愈來愈高,其效能更是不斷增強,在這些因素之下,電子元件的總發熱量則幾乎逐年升高,以中央處理單元為例,目前所開發的中央處理單元之運算效率已可達數十億赫(GHz),其所產生的高熱已非傳統散熱器所能迅速散除。倘若沒有良好的散熱方式來排除電子元件所產生的熱,這些過高的溫度將導致電子元件產生電子游離與熱應力等現象產生,而造成整體的穩定性降低以及縮短電子元件本身的壽命,因此如何排除這些熱量以避免電子元件的過熱,一直是不容忽視的問題。 With the rapid development of high technology, the volume of electronic components has become smaller, and the density per unit area has become higher and higher, and its performance has been continuously enhanced. Under these factors, the total heat generation of electronic components is Almost every year, taking the central processing unit as an example, the central processing unit currently developed has an operating efficiency of several billion megahertz (GHz), and the high heat generated by it has been rapidly dissipated by conventional heat sinks. If there is no good heat dissipation method to eliminate the heat generated by the electronic components, these excessive temperatures will cause electronic components to generate electron liberation and thermal stress, resulting in a decrease in overall stability and a shortened life of the electronic components. How to eliminate this heat to avoid overheating of electronic components has always been a problem that cannot be ignored.

然而,未來的半導體構裝將趨向於更高功率及更高密度,相對的,熱能的排散即是開發者未來持續必需面對的問題,而目前電子元件在工作中所發出的高密度能量(high power density)所帶來的高密度熱,就當前的散熱方式,是以銅、鋁來當散熱片(Heat Spreader)的基礎材料,或是更進一步的將熱管(Heat Pipe)埋入基礎材料內,以加快熱擴散的速度,但此種做法所須之成本也相對的提高了許多。且隨著電子元件的進步與改良,單位面積上的密集度也愈來愈高,使得必須讓熱擴散速度也隨之加快,而銅、鋁的導熱係數約為400瓦特/每公尺開爾文(W/mk)及200瓦特/每公尺開爾文(W/mk),在發熱量不斷升高的電子元件上,已漸漸的不敷使用,且銅與鋁的密度約為8.9公克/每立方公分(g/cm3)及2.7公克/每立方公分(g/cm3),所以 當電子元件與銅、鋁所製成之散熱器組合後,散熱器的重量往往會對電子元件產生一應力,長時間下來容易破壞電子元件的結構,而造成電子元件的使用壽命減短或損壞。 However, the future semiconductor package will tend to be higher power and higher density. In contrast, the thermal energy dissipation is a problem that developers must continue to face in the future, and the high-density energy emitted by electronic components at work. The high-density heat brought about by the high power density, the current heat dissipation method is based on copper or aluminum as the base material of the heat spreader (Heat Spreader), or further buried the heat pipe (Heat Pipe) into the foundation. Within the material, to speed up the heat diffusion, but the cost of this practice has also increased considerably. With the advancement and improvement of electronic components, the density per unit area is becoming higher and higher, so that the heat diffusion rate must be accelerated, and the thermal conductivity of copper and aluminum is about 400 watts/meter Kelvin ( W/mk) and 200 watts/meter Kelvin (W/mk) are gradually being used in electronic components with increasing heat generation, and the density of copper and aluminum is about 8.9 g/cm3. (g/cm 3 ) and 2.7 g/cm 3 (g/cm 3 ), so when the electronic component is combined with a heat sink made of copper or aluminum, the weight of the heat sink tends to cause a stress on the electronic component. It is easy to damage the structure of the electronic component for a long time, and the life of the electronic component is shortened or damaged.

由於銅、鋁為基礎材料所製成之散熱器有上述之問題,所以 新的散熱材料之研發,便成為非常重要的一環。目前,鑽石為自然界中具有極佳的特性,如深紫外光到遠紅外線的穿透性極佳、最高表面聲波速、最高熱傳導率、最高物理硬度、高輻射抵抗能力、良好化學惰性及優異絕緣性特性等,已被廣泛應用至傳統的切削工具及研磨材料。近來,隨著化學氣相沉積(Chemical Vapor Deposition,CVD)技術的發展,使得鑽石成為良好的電導體及熱導體,鑽石在室溫下熱傳導係數最高可達2,000瓦特/每公尺開爾文(W/mk),並以此將鑽石應用擴展至半導體及光電產業的散熱結構上。 Since the heat sink made of copper and aluminum as the base material has the above problems, The development of new heat-dissipating materials has become a very important part. At present, diamonds have excellent properties in nature, such as excellent penetration from deep ultraviolet light to far infrared rays, highest surface acoustic wave velocity, highest thermal conductivity, highest physical hardness, high radiation resistance, good chemical inertness and excellent insulation. Sex properties, etc., have been widely applied to conventional cutting tools and abrasive materials. Recently, with the development of Chemical Vapor Deposition (CVD) technology, diamonds have become good electrical conductors and thermal conductors. Diamonds have a thermal conductivity of up to 2,000 watts per meter Kelvin at room temperature (W/ Mk), and in this way extend the diamond application to the heat dissipation structure of the semiconductor and optoelectronic industries.

此外,先前的鑽石與金屬複合材料散熱片的製造方法可分三 種,概述如下。第一,利用鑽石微顆粒(或粉末)以有機物,例如環氧樹脂或壓克力樹脂、石腊或矽油粘結而成,但由於鑽石的濡溼性與鍵結性不佳,故未能彰顯其熱傳導性及熱擴散性而未獲普遍採用。第二,是用化學氣相沉積法(CVD,Chemical Vapor Deposition)的多晶鑽石薄膜,其面積雖大,但厚度有限(小於0.5mm),因此不能有效的導出晶片熱量,而且成本甚高,不符合電子元件散熱的成本效益。第三,是為防止鑽石微顆粒(或粉末)在燒結(Sintering)時金屬熔液滲透時產生氧化或石墨化,其燒結溫度應低於1100℃外,且必需在高真空10-3~10-5陶爾(torr)及大於5GPa的高壓下,以避免傷害鑽石因石墨化體積膨脹而脆裂,及鍵結力差導致影響其成品之熱傳導力,且製程設備及製作成本極高,亦不符合生產的經濟效益。 In addition, the previous methods for manufacturing diamond and metal composite heat sinks can be divided into three types, as outlined below. First, the use of diamond microparticles (or powder) bonded with organic materials, such as epoxy resin or acrylic resin, paraffin wax or eucalyptus oil, but due to the poor wettability and bonding properties of diamonds, it fails to show Its thermal conductivity and thermal diffusivity have not been widely adopted. Second, it is a polycrystalline diamond film by chemical vapor deposition (CVD), which has a large area but a limited thickness (less than 0.5 mm), so it cannot effectively derive the heat of the wafer, and the cost is high. Does not meet the cost-effectiveness of heat dissipation of electronic components. Thirdly, in order to prevent oxidation or graphitization of the diamond microparticles (or powder) during the penetration of the molten metal during sintering, the sintering temperature should be lower than 1100 ° C, and must be in the high vacuum 10 -3 ~ 10 -5 tor (orr) and high pressure greater than 5GPa to avoid damage to the diamond due to the expansion of the graphitized volume and brittle fracture, and the poor bonding force affects the thermal conductivity of the finished product, and the process equipment and production costs are extremely high, Does not meet the economic benefits of production.

有鑑於上述鑽石複材散熱片(均熱片)的缺失外,更必需瞭解 與謹慎因應在3C電子產業、光電產業...等,在逐漸發展走向全球化、低價化與微利化的趨勢下,除了需強化製造技術的提昇及成本效益的管控與積極發展高性能的電子散熱材的原則下,本發明特別研創具競爭性及可行性的鑽石微顆粒與金屬材料之散熱片與其製法,不僅解決上述之缺點,而與金屬材料所結合之鑽石微顆粒更可符合一定程度之熱衝擊測試(Thermal stock test)的要求,不會使該鑽石微顆粒因而脫落於該金屬之散熱片上。 In view of the lack of the above-mentioned diamond composite fins (soaked fins), it is necessary to understand In the trend of globalization, low-cost and low-profit, in the 3C electronics industry, optoelectronics industry, etc., in addition to the need to strengthen the improvement of manufacturing technology and cost-effective control and actively develop high-performance Under the principle of electronic heat dissipating material, the present invention specially develops a competitive and feasible diamond microparticle and metal material heat sink and a manufacturing method thereof, which not only solves the above disadvantages, but also the diamond microparticles combined with the metal material can conform to a certain degree. The requirement of the thermal stock test does not cause the diamond microparticles to fall off the heat sink of the metal.

本發明的主要目的是在於提供一種種散熱片及其製法,以壓合的方式並配合一預設時間之高壓、高溫達到將由多數鑽石微顆粒所構成之一鑽石層壓合於兩金屬層中藉以提高散熱效果之目的。 The main object of the present invention is to provide a heat sink and a method for preparing the same, which is laminated and integrated into two metal layers by a plurality of diamond microparticles in a press-fit manner and with a predetermined high pressure and high temperature. In order to improve the cooling effect.

為達上述目的,本發明一種散熱片,係包括:一第一金屬層、一鑽石層、以及一第二金屬層。該鑽石層係均勻分佈於該第一金屬層上。該第二金屬層係位於該第一金屬層之上,並將該鑽石層夾合於其中。其特徵在於:透過一加壓裝置(例如油壓缸)將該第二金屬層與該第一金屬層利用預設之高壓、高溫並持續一預設時間的方式進行熱壓融合,而該第一金屬層厚度係比該第二金屬層厚度薄,且壓合後整體較佳厚度範圍介於0.1mm~1mm之間。 To achieve the above object, a heat sink according to the present invention comprises: a first metal layer, a diamond layer, and a second metal layer. The diamond layer is evenly distributed on the first metal layer. The second metal layer is over the first metal layer and the diamond layer is sandwiched therein. The method is characterized in that the second metal layer and the first metal layer are hot-pressed and fused by a predetermined high pressure and high temperature for a predetermined time by a pressing device (for example, a hydraulic cylinder), and the first The thickness of a metal layer is thinner than the thickness of the second metal layer, and the overall thickness after pressing is preferably between 0.1 mm and 1 mm.

1、1a、1b‧‧‧散熱片 1, 1a, 1b‧‧‧ heat sink

1a’‧‧‧小型散熱片 1a’‧‧‧Small heat sink

11‧‧‧第一金屬層 11‧‧‧First metal layer

12‧‧‧鑽石層 12‧‧‧Diamond layer

13‧‧‧第二金屬層 13‧‧‧Second metal layer

2‧‧‧金屬條 2‧‧‧Metal strips

3‧‧‧加壓裝置 3‧‧‧Pressure device

4‧‧‧裁刀 4‧‧‧Cutter

5‧‧‧工作平台 5‧‧‧Working platform

7‧‧‧真空泵 7‧‧‧vacuum pump

8‧‧‧預設金屬 8‧‧‧Preset metal

9‧‧‧鑽石顆粒 9‧‧‧ diamond particles

圖一為本發明散熱片第一較佳實施例之剖面示意圖。 1 is a schematic cross-sectional view showing a first preferred embodiment of a heat sink according to the present invention.

圖二A~圖二D為本發明散熱片第一較佳實施例之製造方法步驟示意圖。 2A to 2D are schematic diagrams showing the steps of a manufacturing method of the first preferred embodiment of the heat sink of the present invention.

圖三為本發明散熱片第二較佳實施例之剖面示意圖。 Figure 3 is a cross-sectional view showing a second preferred embodiment of the heat sink of the present invention.

圖四A~圖四F為本發明散熱片第二較佳實施例之製造方法步驟示意圖。 4A to 4F are schematic diagrams showing the steps of a manufacturing method of a second preferred embodiment of the heat sink of the present invention.

圖五A~圖五C為本發明散熱片第三較佳實施例之製造方法步驟示意圖。 5A-5C are schematic diagrams showing the steps of a manufacturing method of a third preferred embodiment of the heat sink of the present invention.

為了能更清楚地描述本發明所提出之散熱片及其製法,以下將配合圖式詳細說明之。 In order to more clearly describe the heat sink of the present invention and the method of manufacturing the same, the following will be described in detail in conjunction with the drawings.

請參閱圖一所示,圖一係為本發明散熱片第一較佳實施例之剖面示意圖。其中,一種散熱片1,係包括:一第一金屬層11、一鑽石層12、 以及一第二金屬層13。該鑽石層12係將複數個鑽石顆粒9(粉末狀之鑽石微粒)均勻分佈於該第一金屬層11的上表面上。該第二金屬層13係位於該第一金屬層11具有該鑽石層12之該上表面上方,並將該鑽石層12夾合於其中。接著,透過一加壓裝置(例如但不侷限於油壓缸)3將該第二金屬層13與該第一金屬層11在預設之高壓、高溫的製程條件下並持續一預設時間的方式相互進行熱壓融合,使散熱片1成為一體之結構。而該第一金屬層11厚度係比該第二金屬層13厚度薄,且經壓合後該散熱片1整體較佳厚度範圍介於0.1mm~1mm之間。 Referring to FIG. 1, FIG. 1 is a cross-sectional view showing a first preferred embodiment of the heat sink of the present invention. The heat sink 1 includes a first metal layer 11 and a diamond layer 12, And a second metal layer 13. The diamond layer 12 uniformly distributes a plurality of diamond particles 9 (powder-shaped diamond particles) on the upper surface of the first metal layer 11. The second metal layer 13 is located above the upper surface of the first metal layer 11 having the diamond layer 12, and the diamond layer 12 is sandwiched therein. Then, the second metal layer 13 and the first metal layer 11 are subjected to a predetermined high-pressure, high-temperature process condition through a pressing device (such as but not limited to a hydraulic cylinder) for a predetermined period of time. The method is mutually thermocompression-bonded to make the heat sink 1 an integrated structure. The thickness of the first metal layer 11 is thinner than the thickness of the second metal layer 13, and the overall thickness of the heat sink 1 after pressing is preferably between 0.1 mm and 1 mm.

請參閱圖二A~圖二D並配合圖一所示所示,圖二A~圖二D 係為本發明散熱片第一較佳實施例之製造方法步驟示意圖。其中,本發明第一較佳實施例之散熱片1製造方法,係包括有以下步驟:步驟一,如圖二A所示,準備一第一金屬層11置於一工作平台5上;步驟二,如圖二B所示,將一預設份量之鑽石顆粒9(亦即,鑽石微顆粒,或稱鑽石粉末)平均分佈於該第一金屬層11之上,以構成一層很薄的鑽石微顆粒層;於本發明之散熱片1製造方法的第一實施例中,在加工過程中,本發明並藉由一真空泵7將該第一金屬層11所處之加工環境進行抽真空的操作;步驟三,如圖二C所示,將一第二金屬層13重疊於該第一金屬層11之上,並將該鑽石顆粒9蓋合於其中;以及步驟四,如圖二D所示,透過一加壓裝置(例如但不侷限於油壓缸3)將該第二金屬層13與該第一金屬層11利用預設之高壓、高溫並持續一預設時間的方式進行相互熱壓融合,令該第二金屬層13與該第一金屬層11中央形成一鑽石層12;在此步驟中,該真空泵7依然持續性地對第一金屬層11、鑽石顆粒9及第二金屬層13所處之加工環境進行抽真空的操作,以避免在熱壓融合的過程中,將空氣包覆於第一及第二金屬層11、13或是多數鑽石微顆粒之間。藉此可完成本發明之一整片的散熱片1。 Please refer to Figure 2A~Figure 2D and shown in Figure 1, Figure 2A~2D It is a schematic diagram of the steps of the manufacturing method of the first preferred embodiment of the heat sink of the present invention. The method for manufacturing the heat sink 1 of the first preferred embodiment of the present invention includes the following steps: Step 1, as shown in FIG. 2A, preparing a first metal layer 11 on a working platform 5; Step 2 As shown in FIG. 2B, a predetermined amount of diamond particles 9 (ie, diamond microparticles, or diamond powder) is evenly distributed on the first metal layer 11 to form a thin layer of diamond micro. Granular layer; in the first embodiment of the method for manufacturing the heat sink 1 of the present invention, during the processing, the present invention performs a vacuuming operation of the processing environment in which the first metal layer 11 is located by a vacuum pump 7; Step 3, as shown in FIG. 2C, a second metal layer 13 is overlaid on the first metal layer 11, and the diamond particles 9 are covered therein; and step four, as shown in FIG. The second metal layer 13 and the first metal layer 11 are mutually heat-compressed by a predetermined high voltage and high temperature through a pressing device (for example, but not limited to the hydraulic cylinder 3) for a predetermined time. , the second metal layer 13 and the first metal layer 11 form a diamond layer 12; In this step, the vacuum pump 7 continuously vacuums the processing environment in which the first metal layer 11, the diamond particles 9 and the second metal layer 13 are located, so as to avoid air during the hot press fusion process. Covered between the first and second metal layers 11, 13 or between a plurality of diamond microparticles. Thereby, the entire heat sink 1 of the present invention can be completed.

於本發明第一較佳實施例中,該第一金屬層11厚度係比該第二金屬層13厚度薄,且壓合後整體較佳厚度H範圍介於0.1mm~1mm之間。其中,該散熱片1整體厚度H最佳為介於0.2mm~0.6mm之間。 In the first preferred embodiment of the present invention, the thickness of the first metal layer 11 is thinner than the thickness of the second metal layer 13, and the overall thickness H is preferably between 0.1 mm and 1 mm after pressing. The overall thickness H of the heat sink 1 is preferably between 0.2 mm and 0.6 mm.

於本發明第一較佳實施例中,該第一金屬層11厚度h1範圍較 佳為0.03mm~0.07mm之間;其中,該第一金屬層11厚度h1最佳為介於0.04mm~0.06mm之間。 In the first preferred embodiment of the present invention, the first metal layer 11 has a thickness h1 range. Preferably, it is between 0.03 mm and 0.07 mm; wherein the thickness h1 of the first metal layer 11 is preferably between 0.04 mm and 0.06 mm.

於本發明第一較佳實施例中,該第二金屬層13厚度h2範圍較 佳為0.06mm~0.15mm之間;其中,該第二金屬層13厚度h2最佳為介於0.09mm~0.11mm。 In the first preferred embodiment of the present invention, the second metal layer 13 has a thickness h2 range. Preferably, the thickness of the second metal layer 13 is between 0.09 mm and 0.11 mm.

於本發明第一較佳實施例中,該鑽石層12厚度h3範圍較佳為 0.06mm~0.15mm之間;其中,該鑽石層12厚度h3最佳為介於0.09 mm~0.11mm。 In the first preferred embodiment of the present invention, the thickness of the diamond layer 12 is preferably in the range of h3. Between 0.06 mm and 0.15 mm; wherein the thickness h3 of the diamond layer 12 is preferably between 0.09 mm and 0.11 mm.

值得一提的是,在步驟四所述之熱壓融合的製程中,將會有 部分的金屬層材料從周圍邊緣溢料,因此,製造完成之散熱片1的整體厚度H實際上會比第一金屬層11、鑽石層12及第二金屬層13三者厚度的總和略小一點點,亦即,實際上會有H<(h1+h2+h3)的結果。 It is worth mentioning that in the process of hot pressing fusion described in step four, there will be A portion of the metal layer material is flashed from the peripheral edge, and therefore, the overall thickness H of the manufactured heat sink 1 is actually slightly smaller than the sum of the thicknesses of the first metal layer 11, the diamond layer 12, and the second metal layer 13. Point, that is, there will actually be a result of H < (h1 + h2 + h3).

於本發明第一較佳實施例中,該第一金屬層11與該第二金屬 層13之材質可以是銅、鋁、銅合金、鋁合金、銀、金、或其他高導熱金屬其中之一。於本發明第一較佳實施例中,該第一金屬層11與該第二金屬層13之材質係分別為銅金屬。 In the first preferred embodiment of the present invention, the first metal layer 11 and the second metal The material of layer 13 may be one of copper, aluminum, copper alloy, aluminum alloy, silver, gold, or other highly thermally conductive metal. In the first preferred embodiment of the present invention, the materials of the first metal layer 11 and the second metal layer 13 are respectively copper metal.

於本發明第一較佳實施例中,其步驟四所述之熱壓融合製程 的製程溫度,係針對該第一金屬層11與該第二金屬層13於壓合該鑽石層12時施以範圍300℃~900℃之高溫。 In the first preferred embodiment of the present invention, the hot pressing fusion process described in the fourth step The process temperature is applied to the first metal layer 11 and the second metal layer 13 at a high temperature ranging from 300 ° C to 900 ° C when the diamond layer 12 is pressed.

於本發明第一較佳實施例中,其步驟四所述之熱壓融合製程 的加壓裝置(油壓缸)3的加壓大小,係針對該第一金屬層11與該第二金屬層13於壓合該鑽石層12時施以範圍15kgw/cm2~25kgw/cm2之高壓。 In the first preferred embodiment of the present invention, the pressurizing device (hydraulic cylinder) 3 of the hot press fusion process described in the fourth step is pressurized for the first metal layer 11 and the second metal layer. 13 applies a high pressure ranging from 15 kgw/cm 2 to 25 kgw/cm 2 when the diamond layer 12 is pressed.

於本發明第一較佳實施例中,其步驟四所述之熱壓融合製程 的高溫高壓持續時間,係針對該第一金屬層11與該第二金屬層13壓合之預設時間較佳範圍為8~15分鐘。 In the first preferred embodiment of the present invention, the hot pressing fusion process described in the fourth step The high temperature and high pressure duration of the first metal layer 11 and the second metal layer 13 are preferably in the range of 8 to 15 minutes.

也就是說,於本發明第一較佳實施例中,該第一金屬層11 以及該第二金屬層13係分別為銅材質之金屬板體,藉由施以300℃~900℃高溫的方式將銅材質之該第一金屬層11以及該第二金屬層13加熱變軟(銅材質熔點為1085℃,所以在熱壓融合製程中不會融化只會變軟),並同時在 以真空泵7持續抽真空的過程中,透過該加壓裝置(油壓缸)3將置於該工作平台5上所依序疊置之該第一金屬層11、該鑽石顆粒9、以及該第二金屬層13進一步施以20kgw/cm2以上之高壓的方式加以壓合,並大致持續10分鐘以上的時間後,使該第一及第二金屬層11、13被熱壓融合成為一體並同時把鑽石顆粒9包覆於第一及第二金屬層11、13之間而構成該鑽石層12,如此可使該些鑽石層12於執行熱衝擊測試(Thermal stock test)時,該些鑽石顆粒9不易由該散熱片1上脫落。 That is, in the first preferred embodiment of the present invention, the first metal layer 11 and the second metal layer 13 are respectively made of a metal plate made of copper, and a high temperature of 300 ° C to 900 ° C is applied. The first metal layer 11 of the copper material and the second metal layer 13 are heated and softened (the melting point of the copper material is 1085 ° C, so the melt will not soften during the hot press fusion process), and at the same time, the vacuum pump 7 During the continuous vacuuming, the first metal layer 11, the diamond particles 9, and the second metal layer are sequentially stacked on the working platform 5 through the pressing device (hydraulic cylinder) 3. 13 is further applied by pressing at a high pressure of 20 kgw/cm 2 or more, and after substantially a period of more than 10 minutes, the first and second metal layers 11 and 13 are hot-pressed and integrated into one body and diamond particles are simultaneously 9 is formed between the first and second metal layers 11 and 13 to form the diamond layer 12, so that the diamond particles 12 are not easily used by the diamond layer 12 when performing a thermal stock test. The heat sink 1 is detached.

此外,由於該第一金屬層11厚度係比該第二金屬層13厚度 薄,且壓合後該散熱片1整體較佳厚度大致為0.2mm,因此,本發明之該散熱片1更適合提供用於一般微型電器(例如智慧型手機、平板電腦等...)內部電子零組件散熱所需,以相對較薄之該第一金屬層11接觸於一熱源(CPU中央處理器、LED晶片)之上,並透過中央壓合之該鑽石層12極佳之導熱特性更使得該熱源所生成之熱量快速傳遞至該第二金屬層13上,使該散熱片1整體的散熱效率大幅提昇。 In addition, since the thickness of the first metal layer 11 is greater than the thickness of the second metal layer 13 The heat sink 1 of the present invention is preferably more suitable for use in general micro appliances (such as smart phones, tablet computers, etc.). The electronic component is required to dissipate heat, and the relatively thin first metal layer 11 is in contact with a heat source (CPU central processing unit, LED chip), and the diamond layer 12 is pressed through the center to have excellent thermal conductivity. The heat generated by the heat source is quickly transmitted to the second metal layer 13, so that the heat dissipation efficiency of the heat sink 1 as a whole is greatly improved.

以下所述之本發明其他較佳實施例中,因大部份的元件係相 同或類似於前述實施例,故相同之元件與結構以下將不再贅述,且相同之元件將直接給予相同之名稱及編號,並對於類似之元件則給予相同名稱但在原編號後另增加一英文字母以資區別且不予贅述,合先敘明。 In other preferred embodiments of the invention described below, most of the components are phased The same components and structures will not be described below, and the same components will be given the same names and numbers directly, and the same components will be given the same name but an additional number after the original number. The letters are distinguished and will not be described in detail.

請參閱圖三所示,係為本發明散熱片第二較佳實施例之剖面 示意圖。由於圖三之本發明散熱片第二較佳實施例其大體上與圖二所示之第一較佳實施例類似,故相同之元件與結構以下將不再贅述。本發明之第二較佳實施例的散熱片與前述第一較佳實施例之不同點在於,該散熱片1a更包括複數個金屬條2。該些金屬條2以平行陣列的方式設置於該第一金屬層11之上,且進一步將該鑽石層12平均分隔成複數個區段。該金屬條2之材質係可以是銅、鋁、銅合金、鋁合金或其他高導熱金屬其中之一。於本發明第二較佳實施例中,該金屬條2之材質係為銅金屬。 Please refer to FIG. 3, which is a cross section of the second preferred embodiment of the heat sink of the present invention. schematic diagram. Since the second preferred embodiment of the heat sink of the present invention is substantially similar to the first preferred embodiment shown in FIG. 2, the same components and structures will not be described below. The heat sink of the second preferred embodiment of the present invention is different from the foregoing first preferred embodiment in that the heat sink 1a further includes a plurality of metal strips 2. The metal strips 2 are disposed on the first metal layer 11 in a parallel array, and further divide the diamond layer 12 into a plurality of sections. The material of the metal strip 2 may be one of copper, aluminum, copper alloy, aluminum alloy or other high thermal conductivity metal. In the second preferred embodiment of the present invention, the metal strip 2 is made of copper metal.

請參閱圖四A~圖四F所示,圖四A~圖四F係為本發明散熱片第二較佳實施例之製造方法步驟示意圖。其中,本發明第二較佳實施例之散熱片1a製造方法,係包括有以下步驟:步驟一,如圖四A所示,準備一第一金屬層11置於一工作平 台5上;步驟一A,如圖四B所示,將複數個金屬條2以平行陣列的方式設置於該第一金屬層11之上;步驟二,如圖四C所示,將一預設份量之鑽石顆粒9(亦即,鑽石微顆粒,或稱鑽石粉末)平均分佈於該第一金屬層11上表面上且介於複數個金屬條2之間的區域內,以構成一層很薄的鑽石微顆粒層;在加工過程中,本發明並藉由一真空泵7將該第一金屬層11所處之加工環境進行抽真空的操作;步驟三,如圖四D所示,將一第二金屬層13重疊於該第一金屬層11之上,並將該鑽石顆粒9蓋合於其中;步驟四,如圖四E所示,透過一加壓裝置(油壓缸)3將該第二金屬層13與該第一金屬層11利用預設之高壓、高溫並持續一預設時間的方式進行熱壓融合,令該第二金屬層13與該第一金屬層11中央形成一鑽石層;在此步驟中,該真空泵7依然持續性地對第一金屬層11、複數個金屬條2、鑽石顆粒9及第二金屬層13所處之加工環境進行抽真空的操作,以避免在熱壓融合的過程中,將空氣包覆於第一及第二金屬層11、13或是多數鑽石微顆粒之間;以及步驟五,如圖四F所示,藉由圖四A至圖四E之步驟可製造出一整片之散熱片1a,之後,利用一裁刀4以平行於該金屬條2長邊方向往各別之金屬條2中央處分別進行裁切成較小尺寸的多數散熱片來使用。。 Referring to FIG. 4A to FIG. 4F, FIG. 4A to FIG. 4F are schematic diagrams showing the steps of the manufacturing method of the second preferred embodiment of the heat sink of the present invention. The manufacturing method of the heat sink 1a of the second preferred embodiment of the present invention includes the following steps: Step 1, as shown in FIG. 4A, preparing a first metal layer 11 to be placed in a working level. On the stage 5; in step A, as shown in FIG. 4B, a plurality of metal strips 2 are disposed on the first metal layer 11 in a parallel array; in step two, as shown in FIG. 4C, a pre- A set of diamond particles 9 (i.e., diamond microparticles, or diamond powder) is evenly distributed on the upper surface of the first metal layer 11 and in a region between the plurality of metal strips 2 to form a thin layer. The diamond microparticle layer; during the processing, the vacuum evacuation pump 7 is used to evacuate the processing environment in which the first metal layer 11 is located; step 3, as shown in FIG. a second metal layer 13 is overlaid on the first metal layer 11 and the diamond particles 9 are covered therein; and in step 4, as shown in FIG. 4E, the first metal layer is passed through a pressurizing device (hydraulic cylinder) 3 The second metal layer 13 and the first metal layer 11 are hot-pressed and fused by a predetermined high voltage and high temperature for a predetermined time, so that the second metal layer 13 and the first metal layer 11 form a diamond layer. In this step, the vacuum pump 7 still continuously faces the first metal layer 11, a plurality of metal strips 2, and drills The processing environment in which the particles 9 and the second metal layer 13 are located is subjected to a vacuum operation to prevent air from being coated on the first and second metal layers 11, 13 or most of the diamond microparticles during the hot press fusion process. And step 5, as shown in FIG. 4F, a whole piece of heat sink 1a can be manufactured by the steps of FIG. 4A to FIG. 4E, and then a cutter 4 is used to be parallel to the metal strip 2 The long side direction is used to cut a plurality of heat sinks of a smaller size into the center of each of the metal strips 2, respectively. .

也就是說,藉由該金屬條2將該鑽石層12分個成複數個區段,利用該裁刀4將該散熱片1a沿著該金屬條2長邊方向往各別之金屬條2中央處分別進行裁切,令該散熱片1a被切成複數個小型散熱片1a’,而各別之該小型散熱片1a’之兩側皆擁有裁切後之該金屬條2,可進一步用以防止該鑽石層12內之該鑽石顆粒9在熱衝擊測試的過程中自裁切處的邊緣掉落。 That is, the diamond layer 12 is divided into a plurality of segments by the metal strip 2, and the heat sink 1a is guided to the center of the respective metal strip 2 along the longitudinal direction of the metal strip 2 by the cutter 4. Cutting, respectively, the heat sink 1a is cut into a plurality of small heat sinks 1a', and each of the small heat sinks 1a' has a stripped metal strip 2 on both sides thereof, which can be further used for The diamond particles 9 in the diamond layer 12 are prevented from falling off the edge of the cut during the thermal shock test.

請參閱圖五A~圖五C所示,圖五A~圖五C係為本發明散熱片第三較佳實施例之製造方法步驟示意圖。其中,本發明第三較佳實施例之散熱片1b製造方法,係包括有以下步驟:步驟一,如圖五A所示,準備一第一金屬層11置於一工作平台5上; 步驟二,如圖五B所示,將一預設份量之鑽石顆粒9平均分佈於該第一金屬層11之上;以及步驟三,如圖五C所示,透過化學氣相沈積(Chemical Vapor Deposition,CVD)技術將一預設金屬8沈積於該第一金屬層11之上,並將該鑽石顆粒9包覆於該第一金屬層11與該預設金屬8中央。 Referring to FIG. 5A to FIG. 5C, FIG. 5A to FIG. 5C are schematic diagrams showing the steps of the manufacturing method of the third preferred embodiment of the heat sink of the present invention. The method for manufacturing the heat sink 1b according to the third preferred embodiment of the present invention includes the following steps: Step 1, as shown in FIG. 5A, preparing a first metal layer 11 on a working platform 5; Step 2, as shown in FIG. 5B, a predetermined amount of diamond particles 9 are evenly distributed on the first metal layer 11; and step 3, as shown in FIG. 5C, is passed through chemical vapor deposition (Chemical Vapor). Deposition, CVD) deposits a predetermined metal 8 on the first metal layer 11 and encapsulates the diamond particles 9 in the center of the first metal layer 11 and the predetermined metal 8.

於本發明第三較佳實施例中,該第一金屬層11之厚度係比該預設金屬8沈積後所構成之厚度薄,且沈積後該散熱片1b整體較佳厚度範圍介於0.1mm~1mm之間。該第一金屬層11與以及該預設金屬8之材質可以是銅、鋁、銅合金、鋁合金或其他高導熱金屬其中之一。 In the third preferred embodiment of the present invention, the thickness of the first metal layer 11 is thinner than the thickness of the predetermined metal 8 after deposition, and the overall thickness of the heat sink 1b after deposition is preferably 0.1 mm. ~1mm between. The material of the first metal layer 11 and the predetermined metal 8 may be one of copper, aluminum, copper alloy, aluminum alloy or other high thermal conductivity metal.

唯以上所述之實施例不應用於限制本發明之可應用範圍,本發明之保護範圍應以本發明之申請專利範圍內容所界定技術精神及其均等變化所含括之範圍為主者。即大凡依本發明申請專利範圍所做之均等變化及修飾,仍將不失本發明之要義所在,亦不脫離本發明之精神和範圍,故都應視為本發明的進一步實施狀況。 The above-mentioned embodiments are not intended to limit the scope of application of the present invention, and the scope of the present invention should be based on the technical spirit defined by the content of the patent application scope of the present invention and the scope thereof. It is to be understood that the scope of the present invention is not limited by the spirit and scope of the present invention, and should be considered as a further embodiment of the present invention.

1‧‧‧散熱片 1‧‧‧ Heat sink

11‧‧‧第一金屬層 11‧‧‧First metal layer

12‧‧‧鑽石層 12‧‧‧Diamond layer

13‧‧‧第二金屬層 13‧‧‧Second metal layer

9‧‧‧鑽石顆粒 9‧‧‧ diamond particles

Claims (10)

一種散熱片之製造方法,其包括有以下步驟:步驟一,準備一第一金屬層置於一工作平台上;步驟二,將一預設份量之鑽石顆粒平均分佈於該第一金屬層之上;步驟三,將一第二金屬層重疊於該第一金屬層之上,並將該鑽石顆粒蓋合於其中;以及步驟四,利用一真空泵將該工作平台上之該第一金屬層、該鑽石顆粒及該第二金屬層所處之工作環境抽真空,並透過一加壓裝置將該第二金屬層與該第一金屬層利用預設之高壓、高溫並持續一預設時間的方式進行熱壓融合,令該第二金屬層與該第一金屬層中央形成一鑽石層。 A method for manufacturing a heat sink, comprising the steps of: preparing a first metal layer on a working platform; and step 2, distributing a predetermined amount of diamond particles on the first metal layer Step three, superposing a second metal layer on the first metal layer and covering the diamond particles therein; and step four, using the vacuum pump to the first metal layer on the working platform, The working environment of the diamond particles and the second metal layer is evacuated, and the second metal layer and the first metal layer are subjected to a predetermined high pressure and high temperature for a predetermined time by a pressing device. The thermocompression fusion causes the second metal layer to form a diamond layer with the center of the first metal layer. 如申請專利範圍第1項所述之散熱片之製造方法,其中,該第一金屬層厚度係比該第二金屬層厚度薄,且壓合後整體較佳厚度範圍介於0.1mm~1mm之間;該第一金屬層厚度範圍較佳為0.03mm~0.07mm之間;其中,該第二金屬層厚度範圍較佳為0.06mm~0.15mm之間;其中,該鑽石層厚度範圍較佳為0.06mm~0.15mm之間。 The method for manufacturing a heat sink according to claim 1, wherein the thickness of the first metal layer is thinner than the thickness of the second metal layer, and the overall thickness after pressing is preferably between 0.1 mm and 1 mm. The thickness of the first metal layer is preferably between 0.03 mm and 0.07 mm; wherein the thickness of the second metal layer is preferably between 0.06 mm and 0.15 mm; wherein the thickness of the diamond layer is preferably in the range of Between 0.06mm and 0.15mm. 如申請專利範圍第1項所述之散熱片之製造方法,其中,步驟四係針對該第一金屬層與該第二金屬層於壓合時施以範圍300℃~900℃之高溫;其中,步驟四係針對該第一金屬層與該第二金屬層於壓合時施以範圍15kgw/cm2~25kgw/cm2之高壓;其中,步驟四係針對該第一金屬層與該第二金屬層壓合之預設時間較佳範圍為8~15分鐘;其中,該第一金屬層與該第二金屬層之材質可以是銅或銅合金。 The method for manufacturing a heat sink according to claim 1, wherein the step 4 applies a high temperature ranging from 300 ° C to 900 ° C when the first metal layer and the second metal layer are pressed together; Step 4: applying a high pressure ranging from 15 kgw/cm 2 to 25 kgw/cm 2 when the first metal layer and the second metal layer are pressed; wherein, step 4 is for the first metal layer and the second metal The preset time of the lamination is preferably in the range of 8 to 15 minutes; wherein the material of the first metal layer and the second metal layer may be copper or a copper alloy. 如申請專利範圍第1項所述之散熱片之製造方法,更包括步驟一A,其中,該步驟一A係將複數個金屬條以平行陣列的方式設置於該第一金屬層之上。 The method for manufacturing a heat sink according to claim 1, further comprising a step A, wherein the step A is to arrange a plurality of metal strips on the first metal layer in a parallel array. 如申請專利範圍第4項所述之散熱片之製造方法,更包括步驟五,其中,該步驟五係利用一裁刀以平行於該金屬條長邊方向往各別之金屬條中央處分別進行裁切。 The method for manufacturing a heat sink according to claim 4, further comprising the step 5, wherein the step 5 is performed by using a cutter parallel to the longitudinal direction of the metal strip to the center of each of the metal strips. Cut. 一種散熱片,係包括:一第一金屬層; 一鑽石層,係將複數個鑽石顆粒均勻分佈於該第一金屬層上;以及一第二金屬層,係位於該第一金屬層之上,並將該鑽石層夾合於其中;其特徵在於:在藉由一真空泵進行抽真空的環境下,透過一加壓裝置將該第二金屬層與該第一金屬層利用預設之高壓、高溫並持續一預設時間的方式進行熱壓融合。 A heat sink comprising: a first metal layer; a diamond layer uniformly distributing a plurality of diamond particles on the first metal layer; and a second metal layer overlying the first metal layer and sandwiching the diamond layer therein; And in the environment of vacuuming by a vacuum pump, the second metal layer and the first metal layer are hot-pressed and fused by a predetermined high pressure and high temperature through a pressing device for a predetermined time. 如申請專利範圍第6項所述之散熱片,其中,該第一金屬層厚度係比該第二金屬層厚度薄,且壓合後之該散熱片較佳厚度範圍介於0.1mm~1mm之間,該第一金屬層厚度範圍較佳為0.03mm~0.07mm之間;其中,該第二金屬層厚度範圍較佳為0.06mm~0.15mm之間;其中,該鑽石層厚度範圍較佳為0.06mm~0.15mm之間。 The heat sink of claim 6, wherein the thickness of the first metal layer is thinner than the thickness of the second metal layer, and the thickness of the heat sink after pressing is preferably between 0.1 mm and 1 mm. The thickness of the first metal layer is preferably between 0.03 mm and 0.07 mm; wherein the thickness of the second metal layer is preferably between 0.06 mm and 0.15 mm; wherein the thickness of the diamond layer is preferably in the range of Between 0.06mm and 0.15mm. 如申請專利範圍第6項所述之散熱片,其中,係針對該第一金屬層與該第二金屬層於壓合時分別施以範圍300℃~900℃之高溫;其中,係針對該第一金屬層與該第二金屬層於壓合時施以範圍15kgw/cm2~25kgw/cm2之高壓;其中,係針對該第一金屬層與該第二金屬層壓合之預設時間較佳範圍為8~15分鐘。 The heat sink according to claim 6, wherein the first metal layer and the second metal layer are respectively applied with a high temperature ranging from 300 ° C to 900 ° C during pressing, wherein a metal layer and the second metal layer are subjected to a high pressure ranging from 15 kgw/cm 2 to 25 kgw/cm 2 when pressed; wherein, a predetermined time for the first metal layer and the second metal are laminated The range is 8 to 15 minutes. 一種散熱片之製造方法,其包括有以下步驟:步驟一,準備一第一金屬層置於一工作平台上;步驟二,將一預設份量之鑽石顆粒平均分佈於該第一金屬層之上;以及步驟三,透過化學氣相沈積(Chemical Vapor Deposition,CVD)技術將一預設金屬沈積於該第一金屬層之上,並將該鑽石顆粒包覆於該第一金屬層與該預設金屬之間。 A method for manufacturing a heat sink, comprising the steps of: preparing a first metal layer on a working platform; and step 2, distributing a predetermined amount of diamond particles on the first metal layer And step 3, depositing a predetermined metal on the first metal layer by a chemical vapor deposition (CVD) technique, and coating the diamond particle on the first metal layer and the preset Between metal. 如申請專利範圍第9項所述之散熱片之製造方法,其中,該第一金屬層之厚度係比該預設金屬沈積後所構成之厚度薄,且沈積後該散熱片整體較佳厚度範圍介於0.1mm~1mm之間。 The method for manufacturing a heat sink according to claim 9, wherein the thickness of the first metal layer is thinner than the thickness of the predetermined metal after deposition, and the overall thickness of the heat sink is preferably after deposition. Between 0.1mm~1mm.
TW102124036A 2013-07-04 2013-07-04 Heat dissipating plate and method for fabricating the same TW201502458A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW102124036A TW201502458A (en) 2013-07-04 2013-07-04 Heat dissipating plate and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW102124036A TW201502458A (en) 2013-07-04 2013-07-04 Heat dissipating plate and method for fabricating the same

Publications (1)

Publication Number Publication Date
TW201502458A true TW201502458A (en) 2015-01-16

Family

ID=52718343

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102124036A TW201502458A (en) 2013-07-04 2013-07-04 Heat dissipating plate and method for fabricating the same

Country Status (1)

Country Link
TW (1) TW201502458A (en)

Similar Documents

Publication Publication Date Title
US9984951B2 (en) Sintered multilayer heat sinks for microelectronic packages and methods for the production thereof
US10347559B2 (en) High thermal conductivity/low coefficient of thermal expansion composites
CA2767807C (en) Anisotropic thermal conduction element and manufacturing method
KR20180061048A (en) Microelectronic modules with sinter-bonded heat dissipation structures and methods for the fabrication thereof
CN203446165U (en) Composite radiating fin
WO2018121162A1 (en) Chip packaging structure and manufacturing method therefor
CN103258802A (en) Graphite structure, and electronic device using same
JP5889488B2 (en) Electronic circuit equipment
CN104272432B (en) Heat release substrate and its manufacture method
US20150118514A1 (en) High Performance Thermal Interface System With Improved Heat Spreading and CTE Compliance
CN102683568A (en) Thermally conductive composite substrate with heat dissipation properties and manufacturing method thereof
JP6508193B2 (en) Semiconductor device manufacturing method and semiconductor device
JP2021100006A (en) Semiconductor package
JP2010192661A (en) Heat radiation component and method of manufacturing the same, and device and method for radiating heat using the heat radiation component
CN107846810A (en) Radiator structure and preparation method thereof and electronic equipment
TW202020106A (en) Method of producing semiconductor device, thermoconductive sheet, and method of producing thermoconductive sheet
US20210066157A1 (en) Power electronics module and a method of producing a power electronics module
CN110358508B (en) Diamond-containing composite heat dissipation material and preparation method thereof
TW201639706A (en) Heat-dissipation laminated structure and method for manufacturing the same
CN120581514A (en) A heat dissipation substrate and its preparation method and application
TWM435811U (en) Composite heat sink
US7645641B2 (en) Cooling device with a preformed compliant interface
TW202016197A (en) Method of producing semiconductor device, and thermoconductive sheet
TW201342423A (en) Heat dissipation substrate and manufacturing method thereof
TW201502458A (en) Heat dissipating plate and method for fabricating the same