TW201448044A - Oxide layer generating method of semiconductor - Google Patents
Oxide layer generating method of semiconductor Download PDFInfo
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- TW201448044A TW201448044A TW102120975A TW102120975A TW201448044A TW 201448044 A TW201448044 A TW 201448044A TW 102120975 A TW102120975 A TW 102120975A TW 102120975 A TW102120975 A TW 102120975A TW 201448044 A TW201448044 A TW 201448044A
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- Taiwan
- Prior art keywords
- oxide layer
- substrate
- hydrogen peroxide
- semiconductor
- producing
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 8
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000010438 heat treatment Methods 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 17
- 229910052707 ruthenium Inorganic materials 0.000 description 17
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- Formation Of Insulating Films (AREA)
Abstract
Description
本發明係與半導體製程有關，特別是指一種半導體之氧化層成形方法。 The present invention relates to a semiconductor process, and more particularly to a method of forming an oxide layer of a semiconductor.
當矽基板曝露於含氧的環境，由於矽原子與氧原子的鍵結反應，矽基板表面會形成出二氧化矽層。由於二氧化矽層是良好的絕緣與介電材料，不但可以隔絕電性，做成介電層，同時也能夠避免晶片受到化學作用。 When the ruthenium substrate is exposed to an oxygen-containing environment, a ruthenium dioxide layer is formed on the surface of the ruthenium substrate due to the bonding reaction of the ruthenium atom with the oxygen atom. Since the ruthenium dioxide layer is a good insulating and dielectric material, it can not only isolate the electrical properties, but also form a dielectric layer, and at the same time prevent the wafer from being chemically affected.
目前半導體製程中最常見的方式是利用熱氧化製程(Thermal Oxidation)，經由超過攝氏1000度的工作溫度在矽基板表面形成出二氧化矽層。另外也有利用化學氣相沉積製程(CVD)製作二氧化矽層，但是，上述各種生成方式都必須用極高的工作溫度才能達成，而高溫容易破壞矽基板上已完成的半導體元件，而且現有製程所形成的二氧化矽層較不均勻，速度較慢，都會影響其特性，造成品質不易穩定與降低良率等問題。 The most common way in current semiconductor processes is to use a Thermal Oxidation process to form a hafnium oxide layer on the surface of a tantalum substrate at an operating temperature in excess of 1000 degrees Celsius. In addition, a cerium oxide layer is also formed by a chemical vapor deposition process (CVD). However, the above various formation methods must be achieved with an extremely high operating temperature, and the high temperature easily destroys the completed semiconductor device on the substrate, and the existing process is completed. The formed ruthenium dioxide layer is relatively uneven and the speed is slow, which will affect its characteristics, resulting in problems such as difficulty in quality stability and reduction in yield.
因此，本發明的主要目的乃在於提供一半導體之氧化層成形方法，其工作溫度較低，氧化層的成型速度較快，氧化層可具有較佳的均勻度。 Accordingly, it is a primary object of the present invention to provide a method for forming an oxide layer of a semiconductor which has a lower operating temperature, a faster forming speed of the oxide layer, and a preferred uniformity of the oxide layer.
為了達成前揭目的，本發明所提供半導體之氧化層生成方法，首先製備一矽基板，接著使過氧化氫接觸於該矽基板的表面，再以紫外線照射該矽基板表面，使該矽基板表面生成二氧化矽薄膜；藉由上述製法，本發明即可達到成形二氧化矽的工作溫度較低，同時生成速度較快等 之發明目的。 In order to achieve the foregoing object, a method for forming an oxide layer of a semiconductor according to the present invention is to first prepare a germanium substrate, and then contact hydrogen peroxide with the surface of the germanium substrate, and then irradiate the surface of the germanium substrate with ultraviolet rays to make the surface of the germanium substrate The ruthenium dioxide film is formed; by the above-mentioned preparation method, the invention can achieve the lower working temperature of forming cerium oxide, and the formation speed is faster, etc. The purpose of the invention.
在本發明的較佳實施例中，更包含以化學機械研磨法研磨該二氧化矽薄膜，或是施加超音波於該過氧化氫或該矽基板表面，使氧化層可具有較佳的均勻度。 In a preferred embodiment of the present invention, the method further comprises: polishing the cerium oxide film by chemical mechanical polishing, or applying ultrasonic waves to the hydrogen peroxide or the surface of the ruthenium substrate, so that the oxide layer can have better uniformity. .
有關本發明所提供的詳細架構、特點、或技術內容將於後續的實施方式詳細說明中予以描述。然而，在本發明領域中具有通常知識者應能瞭解，該等詳細說明以及實施本發明所列舉的特定實施例，僅係用於說明本發明，並非用以限制本發明之專利申請範圍。 The detailed architecture, features, or technical aspects of the present invention are described in the detailed description of the embodiments. However, it should be understood by those of ordinary skill in the art that the present invention is not limited by the scope of the invention.
以下將藉由所列舉之較佳實施例詳細說明本發明的技術內容及特徵，本發明一較佳實施例所提供半導體之氧化層成形方法，可應用於任何以矽為材料的半導體製程，本方法包含有下列步驟： The technical content and features of the present invention will be described in detail below by way of preferred embodiments. The preferred embodiment of the present invention provides a method for forming an oxide layer of a semiconductor, which can be applied to any semiconductor process using germanium as a material. The method consists of the following steps:
一、製備一矽基板，矽基板表面具有平面區域或事先完成前製程的半導體元件。 1. Preparing a substrate, the surface of the substrate having a planar area or a semiconductor component that has previously completed the pre-process.
二、將過氧化氫(H2O2)覆設於矽基板表面，過氧化氫可以是溶液或氣態過氧化氫。若使用過氧化氫溶液，整個矽基板都浸入溶液，溶液恰好覆蓋於矽基板表面，而若是使用氣態過氧化氫，矽基板即可直接設置於具有氣態過氧化氫的環境內部，使矽基板表面佈滿著過氧化氫。 2. Hydrogen peroxide (H 2 O 2 ) is applied to the surface of the crucible substrate, and the hydrogen peroxide may be a solution or gaseous hydrogen peroxide. If a hydrogen peroxide solution is used, the entire ruthenium substrate is immersed in the solution, and the solution covers the surface of the ruthenium substrate. If gaseous hydrogen peroxide is used, the ruthenium substrate can be directly disposed inside the environment with gaseous hydrogen peroxide to make the surface of the ruthenium substrate It is covered with hydrogen peroxide.
三、以紫外線照射於接觸過氧化氫的矽基板表面，即可使矽基板表面生成二氧化矽薄膜。 3. The ultraviolet ray is irradiated onto the surface of the ruthenium substrate contacting the hydrogen peroxide to form a ruthenium dioxide film on the surface of the ruthenium substrate.
當紫外線照射於矽基板，利用紫外線與矽基板之間產生共振現象，增加矽原子與氧原子之間的鍵結能，可以促使矽基板表面快速地吸收過氧化氫，形成出二氧化矽薄膜。常用的紫外線波長為100nm~400nm，本發明舉例的實施條件是以4mW、257nm波長的紫外線照射矽基板約5秒，即可生成厚度約6nm的二氧化矽薄膜。相較於習用半導體製程，本發明即可達到成形二氧化矽的工作溫度極低，同時生成速度較快的發明目的。 When ultraviolet light is irradiated on the ruthenium substrate, a resonance phenomenon is generated between the ultraviolet ray and the ruthenium substrate, and the bonding energy between the ruthenium atom and the oxygen atom is increased, so that the surface of the ruthenium substrate can be rapidly absorbed by the hydrogen peroxide to form a ruthenium dioxide film. The commonly used ultraviolet wavelength is from 100 nm to 400 nm. The exemplified conditions of the present invention are that the ruthenium substrate is irradiated with ultraviolet rays having a wavelength of 4 mW and 257 nm for about 5 seconds to form a ruthenium dioxide film having a thickness of about 6 nm. Compared with the conventional semiconductor process, the present invention can achieve the object of forming the cerium oxide with extremely low operating temperature and at the same time generating a faster speed.
為了能夠增加二氧化矽薄膜的成形速度與均勻度，本發明更可直接再加熱過氧化氫與矽基板，讓工作溫度略高於常溫，例如攝氏90~150 度左右，即可更為增加二氧化矽薄膜的成形速度。另外，也可以利用化學機械研磨法研磨二氧化矽薄膜，或是施加超音波於矽基板接觸過氧化氫的表面，都能夠提昇二氧化矽薄膜的均勻度。 In order to increase the forming speed and uniformity of the cerium oxide film, the present invention can directly reheat the hydrogen peroxide and the ruthenium substrate to make the working temperature slightly higher than the normal temperature, for example, 90 to 150 degrees Celsius. About the degree, the forming speed of the cerium oxide film can be further increased. Alternatively, the cerium oxide film may be polished by a chemical mechanical polishing method or a supersonic wave may be applied to the surface of the ruthenium substrate in contact with hydrogen peroxide to improve the uniformity of the ruthenium dioxide film.
最後，必須再次說明，本發明於前揭實施例中所揭露的構成元件僅為舉例說明，並非用來限制本案之範圍，其他等效元件的替代或變化，亦應為本案之申請專利範圍所涵蓋。 Finally, it is to be noted that the constituent elements disclosed in the foregoing embodiments are merely illustrative and are not intended to limit the scope of the present invention. The alternative or variations of other equivalent elements should also be the scope of the patent application of the present application. Covered.
Claims (6)
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| Application Number | Priority Date | Filing Date | Title |
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| TW102120975A TW201448044A (en) | 2013-06-13 | 2013-06-13 | Oxide layer generating method of semiconductor |
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| TW102120975A TW201448044A (en) | 2013-06-13 | 2013-06-13 | Oxide layer generating method of semiconductor |
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| TW201448044A true TW201448044A (en) | 2014-12-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI608133B (en) * | 2016-07-08 | 2017-12-11 | 上海新昇半導體科技有限公司 | A method of forming oxide layer and epitaxy layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI608133B (en) * | 2016-07-08 | 2017-12-11 | 上海新昇半導體科技有限公司 | A method of forming oxide layer and epitaxy layer |
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