TW201430012A - 聚醯亞胺膜及其聚醯亞胺積層板 - Google Patents
聚醯亞胺膜及其聚醯亞胺積層板 Download PDFInfo
- Publication number
- TW201430012A TW201430012A TW102102538A TW102102538A TW201430012A TW 201430012 A TW201430012 A TW 201430012A TW 102102538 A TW102102538 A TW 102102538A TW 102102538 A TW102102538 A TW 102102538A TW 201430012 A TW201430012 A TW 201430012A
- Authority
- TW
- Taiwan
- Prior art keywords
- polyimide film
- polyimide
- lithium iron
- iron phosphate
- polyimine
- Prior art date
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 130
- 239000004642 Polyimide Substances 0.000 title abstract description 29
- GELKBWJHTRAYNV-UHFFFAOYSA-K lithium iron phosphate Chemical compound [Li+].[Fe+2].[O-]P([O-])([O-])=O GELKBWJHTRAYNV-UHFFFAOYSA-K 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 44
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 238000002834 transmittance Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 10
- 239000010954 inorganic particle Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000003575 carbonaceous material Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000006229 carbon black Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000005995 Aluminium silicate Substances 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 235000012211 aluminium silicate Nutrition 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 239000004927 clay Substances 0.000 claims description 2
- FPAFDBFIGPHWGO-UHFFFAOYSA-N dioxosilane;oxomagnesium;hydrate Chemical compound O.[Mg]=O.[Mg]=O.[Mg]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O FPAFDBFIGPHWGO-UHFFFAOYSA-N 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010445 mica Substances 0.000 claims description 2
- 229910052618 mica group Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 238000013461 design Methods 0.000 description 19
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000000178 monomer Substances 0.000 description 9
- 239000011889 copper foil Substances 0.000 description 7
- 229920005575 poly(amic acid) Polymers 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 108010026466 polyproline Proteins 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-methyl-pyrrolidinone Natural products CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- 108010039918 Polylysine Proteins 0.000 description 3
- -1 bismuth imine Chemical class 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920000656 polylysine Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- 229910010707 LiFePO 4 Inorganic materials 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 125000001841 imino group Chemical group [H]N=* 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- FHBXQJDYHHJCIF-UHFFFAOYSA-N (2,3-diaminophenyl)-phenylmethanone Chemical compound NC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1N FHBXQJDYHHJCIF-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- ADMRIZXRVIRWCR-UHFFFAOYSA-N 3-[(3-aminopropyl-methyl-phenylsilyl)oxy-methyl-phenylsilyl]propan-1-amine Chemical compound C=1C=CC=CC=1[Si](CCCN)(C)O[Si](C)(CCCN)C1=CC=CC=C1 ADMRIZXRVIRWCR-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 1
- XRAAFZNZEZFTCV-UHFFFAOYSA-N 3-[[3-aminopropyl(diphenyl)silyl]oxy-diphenylsilyl]propan-1-amine Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(CCCN)O[Si](CCCN)(C=1C=CC=CC=1)C1=CC=CC=C1 XRAAFZNZEZFTCV-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- HNHQPIBXQALMMN-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)-dimethylsilyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1[Si](C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 HNHQPIBXQALMMN-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- CQMIJLIXKMKFQW-UHFFFAOYSA-N 4-phenylbenzene-1,2,3,5-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C1C1=CC=CC=C1 CQMIJLIXKMKFQW-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 1
- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 1
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- 229920000037 Polyproline Polymers 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- QSNQXZYQEIKDPU-UHFFFAOYSA-N [Li].[Fe] Chemical compound [Li].[Fe] QSNQXZYQEIKDPU-UHFFFAOYSA-N 0.000 description 1
- WFGBXPXOFAFPTO-UHFFFAOYSA-N [P].[Fe].[Li] Chemical compound [P].[Fe].[Li] WFGBXPXOFAFPTO-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-O diphenylphosphanium Chemical compound C=1C=CC=CC=1[PH2+]C1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-O 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- PADPKJACPLYMPK-UHFFFAOYSA-N n',n'-diphenylethane-1,2-diamine Chemical compound C=1C=CC=CC=1N(CCN)C1=CC=CC=C1 PADPKJACPLYMPK-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N para-benzoquinone Natural products O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/32—Phosphorus-containing compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
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Abstract
一種聚醯亞胺膜及其聚醯亞胺積層板，聚醯亞胺膜包含一聚醯亞胺以及一磷酸鐵鋰。磷酸鐵鋰之重量百分比介於1wt%至49wt%，並且磷酸鐵鋰之重量百分比係以聚醯亞胺膜之總重為基準。聚醯亞胺積層板包含一基材以及一聚醯亞胺膜。聚醯亞胺膜覆蓋基材。藉此，以提升聚醯亞胺膜保護印刷電路板上之電路設計的能力。
Description
本發明是關於一種聚醯亞胺膜，特別是關於一種包含磷酸鐵鋰之聚醯亞胺膜及其聚醯亞胺積層板。
聚醯亞胺(polyimide，PI)是一種具有高機械強度、耐高溫並且絕緣的高分子材料，如今已成為製作軟性印刷電路板(Flexible Printed Circuit，FPC)的重要材料。舉例來說，業界在製造印刷電路板時，會在軟性銅箔基板(Flexible Copper Clad Laminate，FCCL)上設計所要的電路，然後再將具有黏著劑的聚醯亞胺膜覆蓋在軟性銅箔基板上，以作成聚醯亞胺覆銅的軟性銅箔基板。由於印刷電路板是現在各式電子產品中的重要元件，因此，聚醯亞胺膜已成為製造各式電子產品時不可或缺的材料。
由於民生消費性電子產品的競爭激烈，而使得各種電子產品的造型、顏色皆是消費者的訴求重點。隨著手機、筆電等捲起了一股黑色流行旋風，擁有黑色外觀的電子產品也成為了流行的代名詞。另一方面，隨著科技的發展，各種電子產品的設計也越趨複雜，由於印刷電路板上的電路設計攸關著各種電子產品的效能，因而成為了各界極欲保護的重點。以聚醯亞胺覆銅的軟性銅箔基板來說，其銅箔基板上的聚醯亞胺膜通常是黃色系，或者是其他具有高度透光性的顏色。這使得聚醯亞胺覆銅的軟性
銅箔基板容易因為聚醯亞胺膜的透光性，而使得印刷電路板上線路層的電路設計被解讀甚至被抄襲，進而影響產品之市場銷售與公司營運。
因此，如何設計一種聚醯亞胺膜，以解決先前技術中，電路設計容易因為聚醯亞胺膜的透光性而被解讀的問題，就成為了研究人員需要解決的問題。
鑒於以上的問題，本發明是關於一種聚醯亞胺膜及其聚醯亞胺積層板，藉以解決先前技術中電路設計容易因為聚醯亞胺膜的透光性而被解讀的問題。
本發明一實施例所揭露的聚醯亞胺膜，包含一聚醯亞胺以及一磷酸鐵鋰(分子式：LiFePO4，英文：Lithium iron phosphate，又稱磷酸鋰鐵、鋰鐵磷，簡稱LFP)。磷酸鐵鋰之重量百分比介於1wt%至49wt%，並且磷酸鐵鋰之重量百分比係以聚醯亞胺膜之總重為基準。
本發明一實施例所揭露的聚醯亞胺積層板，包含一基材以及一聚醯亞胺膜。聚醯亞胺膜覆蓋基材。
根據上述本發明實施例所揭露的聚醯亞胺膜及其聚醯亞胺積層板，由於聚醯亞胺膜包含了磷酸鐵鋰，因而可製成黑色的聚醯亞胺膜及其聚醯亞胺積層板。因此，聚醯亞胺膜可保護其所覆蓋之基材上的電路設計，因而解決了先前技術中電路設計容易因為聚醯亞胺膜的透光性而被解讀的問題。
以上之關於本發明內容之說明及以下之實施方式之說明係用以示範與解釋本發明之原理，並且提供本發明之專利申請範圍更進一步
之解釋。
10‧‧‧基材
20‧‧‧聚醯亞胺膜
第1圖為根據本發明一實施例所揭露之聚醯亞胺膜之製作方法之流程圖。
第2圖為根據本發明一實施例所揭露之聚醯亞胺積層板之製作方法之流程圖。
第3圖為根據本發明一實施例所揭露之聚醯亞胺積層板之示意圖。
以下在實施方式中詳細敘述本發明之詳細特徵以及優點，其內容足以使任何熟習相關技藝者了解本發明之技術內容並據以實施，且根據本說明書所揭露之內容、申請專利範圍及圖式，任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。以下之實施例係進一步詳細說明本發明之觀點，但非以任何觀點限制本發明之範疇。
首先，請參閱第1圖，第1圖為根據本發明一實施例所揭露之聚醯亞胺膜之製作方法之流程圖。
首先，將一磷酸鐵鋰(Lithium iron phosphate，LiFePO4，又稱磷酸鋰鐵、鋰鐵磷，簡稱LFP)加入一溶劑(S101)，以攪拌或研磨製程，配置成一分散液。其中，溶劑例如為二甲基甲醯胺(N,N-Dimethyl formamide，DMF)、二甲基乙醯胺(Dimethylacetamide，DMAc)、二甲基亞碸(Dimethyl sulfoxide，DMSO)、N-甲基吡咯烷酮(N-methyl-2-pyrrolidone，NMP)、γ-丁內酯(gamma-Butyrolactone，GBL)及其衍生物，但並不以此為限。
在本實施例中，磷酸鐵鋰的重量百分比係介於1wt%至49wt%之間，其中，磷酸鐵鋰之重量百分比係以所製成之聚醯亞胺膜之總重為基準。在本發明部分其他實施例中，磷酸鐵鋰之重量百分比介於5wt%至35wt%之間。在本發明部分其他實施例中，磷酸鐵鋰之重量百分比介於10wt%至30wt%之間。須注意的是，如果磷酸鐵鋰的重量百分比大於49 wt%，由於磷酸鐵鋰在溶液中所佔的比例過高，而使得在製成聚醯亞胺膜之後，磷酸鐵鋰在聚醯亞胺膜中會分散不均勻，而降低了所製成之聚醯亞胺膜的品質。然而，如果磷酸鐵鋰的重量百分比小於1 wt%，則會使得聚醯亞胺膜之顏色無法轉變為黑色，並且聚醯亞胺膜的透光度會過高，與使得與100%之聚醯亞胺膜較無明顯之差異，而難以用來保護電路之設計。
在本實施例中，磷酸鐵鋰之粒徑為0.1微米(micrometer，μm)至10微米。在本發明部分其他實施例中，磷酸鐵鋰之粒徑為0.5微米至6微米。詳細來說，如果磷酸鐵鋰之粒徑大於10微米，會使得所製成之聚醯亞胺膜的表面因為磷酸鐵鋰之粒徑過大而過於粗糙，因而不適合使用在印刷電路板相關的電子產品中。另一方面，若磷酸鐵鋰之粒徑小於0.1微米，那麼磷酸鐵鋰之間容易聚集，進而造成磷酸鐵鋰在所製成之聚醯亞胺膜中分散不均勻，並且過小的磷酸鐵鋰會增加製造聚醯亞胺膜的控制難度。
此外，在本實施例及部分其他實施例中，還可加入一碳材或者一無機顆粒於溶液中，藉以進一步提升所製成之聚醯亞胺膜黑色的程度、提升所製成之聚醯亞胺膜的遮光性、或者提升所製成之聚醯亞胺膜的物性，例如聚醯亞胺膜的硬度、模數、尺寸安定性及降低熱膨脹係數等。
其中，碳材例如可包含由石油、木炭或其他有機化合物在完
全燃燒或者不完全燃燒之後所得到的產物。舉例來說，碳材例如為碳黑、碳灰、石墨、碳球、碳管、石墨烯或上述之組合，但並不以此為限。藉由加入碳材，可再強化所製成之聚醯亞胺膜黑色的程度，進而提升聚醯亞胺膜保護電路設計的能力。另一方面，無機顆粒例如但不限於雲母粉、二氧化矽粉、滑石粉、陶瓷粉、黏土粉、二氧化鈦、高嶺土、矽膠燒結粉末、碳化矽、硫酸鋇、氮化硼、氧化鋁、氮化鋁或上述之組合。藉由加入無機顆粒，可再降低所製成之聚醯亞胺膜的透光性及光澤度，進而提升聚醯亞胺膜保護電路設計的能力。
為了使磷酸鐵鋰、碳材或無機顆粒在溶液中混合均勻，並且減少所需的混合時間，可以20赫茲(Hertz，Hz)至100赫茲之頻率來快速攪拌溶液，或者可藉由研磨的方法來加速磷酸鐵鋰、碳材或無機顆粒分散於溶液中。
接著，在溶液中加入一二胺單體，並且使二胺單體溶解於溶液中(S102)。其中，二胺單體例如為對苯二胺(1,4-diamino benzene)、間苯二胺(1,3-diamino benzene)、4,4’-二胺基二苯醚(4,4’-oxydianiline)、3,4’-二胺基二苯醚(3,4’-oxydianiline)、4,4’-二胺基二苯烷(4,4’-methylene dianiline)、二對苯二胺(N,N-Diphenylethylenediamine)，二胺基二苯酮(diaminobenzophenone)、二胺二苯基碸(diamino diphenyl sulfone)、二萘二胺(1,5-naphthalene diamine)、二胺基二苯硫醚(4,4-diamino diphenyl sulfide)、1,3-二(3-胺基酚氧基)苯(1,3-Bis(3-aminophenoxy)benzene)、1,4-二(4-胺基酚氧基)苯(1,4-Bis(4-aminophenoxy)benzene)、1,3-二(4-胺基酚氧基)苯(1,3-Bis(4-aminophenoxy)benzene)、2,2-二[4-(4-胺基酚氧基)苯基]丙烷
(2,2-Bis[4-(4-amino phenoxy)phenyl]propane)、4,4’-二(4-胺基酚氧基)聯苯4,4′-bis-(4-aminophenoxy)biphenyl、4,4’-二(3-胺基酚氧基)聯苯4,4′-bis-(3-aminophenoxy)biphenyl、1,3-二丙胺基-1,1,3,3-四甲基二矽氧烷(1,3-Bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane)、1,3-二丙胺基-1,1,3,3-四苯基二矽氧烷(1,3-Bis(3-aminopropyl)-1,1,3,3-tetraphenyldisiloxane)、1,3-二丙胺基-1,1-二甲基-3,3-二苯基二矽氧烷(1,3-Bis(aminopropyl)-dimethyldiphenyldisiloxane)或上述之組合。
然後，在溶液中加入一四羧酸二酐單體(S103)，藉以使四羧酸二酐單體與二胺單體聚合成一聚醯胺酸。其中，四羧酸二酐單體例如為1,2,4,5-苯四甲酸二酐(1,2,4,5-Benzene tetracarboxylic dianhydride)、聯苯四羧酸二酐(3,3’,4,4’-Biphenyl tetracarboxylic dian hydride)、二苯醚四酸二酐(4,4’-Oxydiphthalic anhydride)、二苯酮四羧酸二酐(Benzophenonetetracarboxylicdianhydride)、二苯基碸四羧酸二酐(3,3',4,4'-diphenyl sulfonetetracarboxylic dianhydride)、萘基四酸二酐(1,2,5,6-naphthalene tetracarboxylic dianhydride)、萘二酸酐(Naphthalenetetracarboxylic Dianhydride)、二-(3，4-苯二甲酸酐)二甲基矽烷(bis(3，4-dicarboxyphenyl)dimethylsilane dianhydride)、1，3-二(3，4-二羧基苯基)-1，1，3，3一四甲基二矽氧烷二酐(1,3-bis(4'-phthalic anhydride)-tetramethyldisiloxane)或上述之組合。
如此一來，溶液中包含了聚醯胺酸、磷酸鐵鋰、碳粉以及無機顆粒。其中，溶液的黏度為100泊(poise，ps)至1000泊(即為10,000 cps至100,000 cps)。
然後，乾燥溶液以形成一聚醯胺酸膜(S104)。詳細來說，是將溶液放置於高溫的環境，使溶液中的溶劑因為高溫氣化而離開溶液並且使溶液中未被氣化的成分形成聚醯胺酸膜。其中，乾燥的溫度例如可匹配於溶劑的沸點。在本實施例中，乾燥的溫度為120℃至200℃，但並不以此為限。
最後，加熱聚醯胺酸膜以形成一聚醯亞胺膜(S105)。詳細而言，是將聚醯胺酸膜放置於更高溫的環境，藉以使聚醯胺酸膜進行亞醯胺化(imidization)反應而形成聚醯亞胺膜。所形成之聚醯亞胺膜可以是裸膜型態，或者可視使用者之需求，將聚醯亞胺膜配置於其他基材上來進行使用。其中，反應的溫度越高，製備聚醯亞胺膜所需的時間越短。然而，若是反應的溫度過高，則可能會破壞聚醯亞胺膜中原子之間的鍵結，而使得聚醯亞胺因為高溫而降解(degradation)。在本實施例中，反應的溫度為270℃至400℃，但並不以此為限。此外，使用者可根據需求來選擇調整聚醯亞胺膜的厚度。須注意的是，聚醯亞胺膜之厚度應大於磷酸鐵鋰之粒徑，在本實施例中，聚醯亞胺膜之厚度為12微米至250微米，但聚醯亞胺膜之厚度並非用以限定本發明。
以下將藉由實施例一至實施例六以及比較例一、二進行更詳細的說明。請參閱表一，表一為依據第1圖之實施例所製備之聚醯亞胺膜之成分組成及其相關檢測。其中，係以膜厚為50μm之聚醯亞胺膜做為舉例說明。
表一
在實施例一至實施例六中，所製成之聚醯亞胺膜均為黑色，因此適合使用在印刷電路板上，藉以保護電路的設計。在實施例一至實施例六之聚醯亞胺膜中，表面電阻均大於等於1013Ω，而體積電阻均大於等於1013Ω cm，因此具有良好的絕緣性質。就聚醯亞胺膜的耐電壓而言，實施例一至實施例六的耐電壓均大於等於1.2kV/mil，也就是說，這些聚醯亞胺膜可至少承受1.2 kV/mil之電壓下而不會崩潰分解。更進一步來說，以高頻線路的印刷電路板而言，通常會需要在大於0.2 kV/mil的條件下運作，而添加了磷酸鐵鋰的聚醯亞胺膜可以承受這樣的施作條件而不會因為高壓進而崩潰分解。在實施例一、二、四及實施例五中，耐電壓係大於等於1.5kV/mil。在實施例一、二及實施例四中，耐電壓係大於等於2.0kV/mil。在實施例二及實施例四中，耐電壓係大於等於3.0kV/mil。就聚醯亞胺膜的透光度來說，實施例一至實施例六的透光度均小於等於20%，因此具有良好的遮光效果。在實施例二至實施例六中，透光度均小於等於10%。在實施例三至實施例六中，透光度為0%。因此，包含有磷酸鐵鋰的聚醯亞胺膜具有較低的透光度，因而在保護電路設計上具有良好的效果。以聚醯亞胺膜的60°光澤度而言，實施例一至實施例六的60°光澤度均小於等於70GU，因而可減少聚醯亞胺膜反射光線。在實施例一至實施例五中，60°光澤度均小於等於40GU。在實施例二至實施例五中，60°光澤度均小於等於30GU。在實施例二至實施例四中，60°光澤度均小於等於25GU。在實施例三、實施例四中，60°光澤度均小於等於20GU。
詳細而言，包含磷酸鐵鋰的聚醯亞胺膜是黑色的薄膜，可用以保護電路之設計。並且，包含磷酸鐵鋰的聚醯亞胺膜具有高表面電阻、體積電阻而具有良好的絕緣性。另一方面，包含磷酸鐵鋰的聚醯亞胺膜還具有高耐電壓，因而可在較高之電壓下進行操作。同時，包含磷酸鐵鋰的聚醯亞胺膜的透光度、光澤度較低，因而具有較佳之保護電路的效果。此外，由於磷酸鐵鋰的分子量大，因此包含磷酸鐵鋰的聚醯亞胺膜在電路設計的製程中，可避免在對聚醯亞胺膜在進行電漿、雷射等表面處理時，磷酸鐵鋰被雷射激發而從聚醯亞胺膜析出，進而造成污染。
接著請參閱表二，表二為未添加磷酸鐵鋰之聚醯亞胺膜之組成及其相關檢測。其中，係以膜厚為50μm之聚醯亞胺膜做為舉例說明。
在比較例一中，由於未添加磷酸鐵鋰，因此所製成之聚醯亞胺膜為橘色。如此一來，無法達到本發明實施例中黑色聚醯亞胺膜所具有之保密功效，因而不適合用於電路設計之保護。在比較例二中，雖然加入碳黑可製造出黑色的聚醯亞胺膜，然而卻也大幅降低了聚醯亞胺膜的耐電壓(0.2kV/mil)。如此一來，聚醯亞胺膜容易因為耐電壓過低而崩潰分解，也不適合使用在印刷電路板上。此外，由於碳黑的分子量小，因此所製成之聚醯亞胺膜在進行電漿、雷射等表面處理時，碳黑容易被雷射激發而析出，進而造成污染。
接著，請參閱第2圖、第3圖，第2圖為根據本發明一實施例所揭露之聚醯亞胺積層板之製作方法之流程圖，第3圖為根據本發明一實施例所揭露之聚醯亞胺積層板之示意圖。其中，步驟S201至S203與第1圖之S101至S103相同或相似，故不再贅述。
在四羧酸二酐單體與二胺單體聚合成聚醯胺酸以後，將包含聚醯胺酸的溶液塗佈於一基材10上，並且加熱移除溶劑(S204)。如此一來，即在基材10上形成了一聚醯胺酸膜。其中，基材10例如為一金屬基板，金屬基板之材質可以為銅、鈀、鋁、鐵、鎳或合金，但並不以此為限。在本實施例中，所使用之基材10為銅箔，而乾燥的溫度為120℃至200℃。須注意的是，基材10的熔點應匹配乾燥的溫度，以避免基材10因為乾燥的溫度
過高而隨之液化。
最後，加熱聚醯胺酸膜以形成一聚醯亞胺膜20(S205)。詳細而言，是將基材10放置於更高溫的環境，藉以使聚醯胺酸膜進行亞醯胺化反應而在基材10的表面形成聚醯亞胺膜20，並且聚醯亞胺膜20覆蓋基材10。如此一來，即完成了聚醯亞胺積層板之製備(如第3圖所示)。其中，基材10的熔點也應匹配進行亞醯胺化反應之反應溫度，以避免基材10因為反應溫度過高而隨之液化。此外，在將包含聚醯胺酸的溶液塗佈於一基材10上時，由於包含聚醯胺酸的溶液為液態，因而可流入基材10的表面空隙。如此一來，在聚醯胺酸經由高溫加熱而使得聚醯胺酸之間形成高分子鍵結並且形成聚醯胺酸膜，並進而形成聚醯亞胺膜20之後，聚醯亞胺膜20與基材10間的空隙較少，亦即聚醯亞胺膜20與基材10間的接觸面積較大。因此，藉由聚醯胺酸膜20與基材10之間相互吸引，而使得聚醯胺酸膜20與基材10之間具有很好的接著力。在本實施例中，反應的溫度為270℃至400℃，此外，聚醯亞胺膜20係固著於基材10(例如：銅箔)上。在本實施例中，基材10與聚醯亞胺膜20之間的接著強度大於或等於0.6公斤/公分。如此一來，聚醯亞胺膜20與基材10不須黏著劑即可結合(例如可製成無膠式的覆銅基層板)，而可避免使用時聚醯亞胺膜20自基材10脫落。此外，這樣的製程較使用黏著劑的製程簡單，並且還可避免黏著劑影響聚醯亞胺膜的物理、化學性質。
請參閱表三，表三為依據第2圖之實施例所製備之聚醯亞胺積層板以及未添加磷酸鐵鋰之聚醯亞胺積層板之成分組成及其相關檢測。
在實施例七至實施例十中，所製成之聚醯亞胺積層板的接著強度均大於等於0.6 kg/cm，測試方法：IPC-TM-650；Method 2.4.9。在實施例七至實施例九中，所製成之聚醯亞胺積層板的接著強度均大於等於1.0 kg/cm。在實施例八中，所製成之聚醯亞胺積層板的接著強度為1.2 kg/cm。此外，在實施例七至實施例十中，所製成之聚醯亞胺積層板的尺寸安定性均小於等於0.08%，測試方法：IPC-TM-650；Method 2.2.4。在實施例七、實施例八中，所製成之聚醯亞胺積層板的尺寸安定性均小於等於0.06%。在實
施例八中，所製成之聚醯亞胺積層板的尺寸安定性均為0.05%。其中，尺寸安定性代表在加工製作時聚醯亞胺積層板的尺寸大小變化之比率。由於本發明實施例之聚醯亞胺積層板的尺寸安定性均小於等於0.08%，因而在進行聚醯亞胺積層板之後續加工時，聚醯亞胺積層板的尺寸變化較小，因而進行後續加工時較為容易。
根據上述本發明實施例所揭露的聚醯亞胺膜及其聚醯亞胺積層板，由於聚醯亞胺膜包含了磷酸鐵鋰，因而可製成黑色的聚醯亞胺膜及其聚醯亞胺積層板。因此，聚醯亞胺膜可保護其所覆蓋之基材上的電路設計，因而解決了先前技術中電路設計容易因為聚醯亞胺膜的透光性而被解讀的問題。
此外，由於聚醯亞胺膜包含了磷酸鐵鋰，因而所製成之聚醯亞胺膜及其醯亞胺積層板具有較高的耐電壓，因而可減少施加電壓時，聚醯亞胺膜因為電壓而崩潰分解的問題。
此外，在部分的實施例中，由於聚醯亞胺膜還包含碳材，因此可再強化聚醯亞胺膜黑色的程度，進而提升聚醯亞胺膜保護電路設計的能力。
此外，在部分的實施例中，由於聚醯亞胺膜還包含無機顆粒，因此可再降低聚醯亞胺膜的透光性，進而提升聚醯亞胺膜保護電路設計的能力，並可降低光澤度，增加質感，減少散光。
雖然本發明以前述之較佳實施例揭露如上，然其並非用以限定本發明，任何熟習相像技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之專利保護範圍須視本說明書所附之申
請專利範圍所界定者為準。
10‧‧‧基材
20‧‧‧聚醯亞胺膜
Claims (15)
- 一種聚醯亞胺膜，包含：一聚醯亞胺；以及一磷酸鐵鋰，重量百分比介於1wt%至49wt%，該磷酸鐵鋰之重量百分比係以該聚醯亞胺膜之總重為基準。
- 如請求項1所述之聚醯亞胺膜，其中該磷酸鐵鋰之重量百分比介於5wt%至35wt%。
- 如請求項2所述之聚醯亞胺膜，其中該磷酸鐵鋰之重量百分比介於10wt%至30wt%。
- 如請求項1所述之聚醯亞胺膜，其中該磷酸鐵鋰之粒徑為0.1微米至10微米。
- 如請求項4所述之聚醯亞胺膜，其中該磷酸鐵鋰之粒徑為0.5微米至6微米。
- 如請求項1所述之聚醯亞胺膜，另包含一碳材，該碳材為碳黑、碳灰、石墨、碳球、碳管、石墨烯或上述之組合。
- 如請求項1所述之聚醯亞胺膜，另包含一無機顆粒，該無機顆粒為雲母粉、二氧化矽粉、滑石粉、陶瓷粉、黏土粉、二氧化鈦、高嶺土、矽膠燒結粉末、碳化矽、硫酸鋇、氮化硼、氧化鋁、氮化鋁或上述之組合。
- 如請求項1所述之聚醯亞胺膜，其中該聚醯亞胺膜之厚度為12微米至250微米。
- 如請求項1所述之聚醯亞胺膜，其中該聚醯亞胺膜之透光度小於或等於20%。
- 如請求項1所述之聚醯亞胺膜，其中該聚醯亞胺膜之耐電壓大於或等於1.2KV/mil。
- 如請求項1所述之聚醯亞胺膜，其中該聚醯亞胺膜之60°光澤度為小於或等於70GU。
- 一種聚醯亞胺積層板，包含：一基材；以及如請求項1所述之一聚醯亞胺膜，該聚醯亞胺膜覆蓋該基材。
- 如請求項12所述之聚醯亞胺積層板，其中該基材為一金屬基板。
- 如請求項12所述之聚醯亞胺積層板，其中該金屬基板之材質為銅、鈀、鋁、鐵、鎳或合金。
- 如請求項12所述之聚醯亞胺積層板，其中該基材與該聚醯亞胺膜之接著強度大於或等於0.6公斤/公分。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102102538A TWI466924B (zh) | 2013-01-23 | 2013-01-23 | 聚醯亞胺膜及其聚醯亞胺積層板 |
| CN201310070393.9A CN103937239B (zh) | 2013-01-23 | 2013-03-06 | 聚酰亚胺膜及其聚酰亚胺积层板 |
| US13/875,167 US9234085B2 (en) | 2013-01-23 | 2013-05-01 | Polyimide film and polyimide laminate thereof |
| JP2013108793A JP5599915B2 (ja) | 2013-01-23 | 2013-05-23 | ポリイミドフィルムおよびそのポリイミド積層体 |
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| TWI594670B (zh) * | 2015-01-14 | 2017-08-01 | 達勝科技股份有限公司 | 聚醯亞胺膜及其聚醯亞胺積層板 |
| JP6405584B2 (ja) * | 2015-05-22 | 2018-10-17 | 株式会社日進産業 | 遠赤外線放射性組成物およびこれを担持した遠赤外線放射性基材 |
| KR102475890B1 (ko) | 2015-10-08 | 2022-12-08 | 삼성전자주식회사 | 금속 공기 전지 시스템 및 그 작동 방법 |
| KR102529151B1 (ko) | 2016-01-27 | 2023-05-08 | 삼성전자주식회사 | 폴리이미드 또는 폴리(아미드-이미드) 코폴리머를 포함하는 성형품 제조용 조성물, 상기 조성물로부터 얻어지는 성형품, 및 상기 성형품을 포함하는 디스플레이 장치 |
| KR101856341B1 (ko) | 2016-07-26 | 2018-05-09 | 현대자동차주식회사 | 그라파이트 구조물 및 이의 제조방법 |
| CN109689745B (zh) * | 2016-09-01 | 2021-12-10 | 聚酰亚胺先端材料有限公司 | 具有绝缘性能的高散热石墨烯-聚酰亚胺复合膜及其制备方法 |
| US11817339B2 (en) * | 2018-03-30 | 2023-11-14 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device and method for manufacturing same |
| KR102879222B1 (ko) * | 2018-09-28 | 2025-10-31 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 금속 피복 적층판의 제조 방법 및 회로 기판의 제조 방법 |
| CN112687837B (zh) * | 2020-12-19 | 2023-06-20 | 贵州贵航新能源科技有限公司 | 一种高安全高化学性能高倍率充电锂电池及其制造方法 |
| CN115703632B (zh) * | 2021-08-11 | 2023-11-28 | 中天新兴材料有限公司 | 聚酰亚胺的回收处理方法 |
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- 2013-03-06 CN CN201310070393.9A patent/CN103937239B/zh active Active
- 2013-05-01 US US13/875,167 patent/US9234085B2/en active Active
- 2013-05-23 JP JP2013108793A patent/JP5599915B2/ja active Active
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|---|---|
| TWI466924B (zh) | 2015-01-01 |
| CN103937239A (zh) | 2014-07-23 |
| JP2014141627A (ja) | 2014-08-07 |
| US20140205824A1 (en) | 2014-07-24 |
| US9234085B2 (en) | 2016-01-12 |
| JP5599915B2 (ja) | 2014-10-01 |
| CN103937239B (zh) | 2016-02-10 |
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