TW201439348A - PVD processing device and PVD processing method - Google Patents

Abstract

Provided is a PVD processing apparatus (1) and a method capable of forming a composite film having a film thickness excellent in circumferential uniformity on a peripheral surface of a substrate by the rotation and revolution of the substrate. The PVD processing apparatus (1) includes: a vacuum chamber; and a revolving stage for revolving a plurality of substrates (W) around the revolving shaft (7) in the vacuum chamber; and the self-rotating stage (4) The substrate (W) is rotated on the revolution stage by a rotation axis (8) parallel to the revolution axis (7); and the plurality of targets (5) are disposed on the radially outer side of the revolution stage. And a position at which the circumferential direction is separated from each other; and the stage rotating mechanism (6) is pulled out from the arc of each of the targets (4) by the center of each of the targets (5) The period between the two tangent lines (L1, L2) causes the self-rotating stage (4) to rotate at an angle of 180 or more.

Description

PVD processing device and PVD processing method

The present invention relates to a PVD processing apparatus and a PVD processing method.

For the purpose of improving the wear resistance of the cutting tool or improving the sliding characteristics of the sliding surface of the mechanical component, the cutting tool and the substrate (the object to be film-formed) as the mechanical component are subjected to physical vapor deposition (PVD). The film formation, specifically, the formation of a film of TiN, TiAlN, CrN or the like. As a device for such film formation, a PVD treatment device such as an arc ion plating (AIP) device or a sputtering device is known.

As such a PVD processing apparatus, it is known to combine a plurality of PVD methods to form a composite film. For example, a hard film is formed on the surface of a substrate (workpiece) by an arc ion plating method, and then a lubricating film is formed on the hard film by a sputtering apparatus. A composite film can be formed on the surface of the substrate by using a plurality of PVD methods in this way.

For example, Patent Document 1 discloses a PVD processing apparatus having a double chamber containing a sputtering evaporation source and a vacuum arc evaporation source. a chamber; and a substrate holder; and a shutter for blocking the evaporation source of the other side when one of the two evaporation sources is used, and capable of sequentially limiting the two evaporation sources by sequentially A plurality of types of films are formed on the substrate by using or simultaneously using two evaporation sources. In the PVD processing apparatus, the evaporation sources are arranged side by side in such a manner that the targets of the respective evaporation sources are turned in the same direction. In the substrate holder, the substrate is held and rotated while the substrate is separated from the target of the respective evaporation source by a predetermined distance. The substrate is moved from the position of one of the targets to the position of the other target by the rotation, whereby the film can be formed alternately on the front surface of both targets to form a composite film.

Further, Patent Document 2 discloses a PVD processing apparatus including: a vacuum chamber that houses a sputtering evaporation source and a vacuum arc evaporation source; and a cylindrical jig provided inside the vacuum chamber, and A substrate is mounted on the outer surface of the jig. In this apparatus, two evaporation sources can be sequentially used by revolving (rotating) the jig, whereby a plurality of films can be formed on the surface of the substrate.

In the PVD processing apparatus of the above-described Patent Document 1 or Patent Document 2, it is possible to form a film having a uniform film thickness in the case where a film formation target is a flat substrate, but it is difficult to apply to a drill or a cutter. The outer peripheral surface of the cylindrical member such as (chip) is formed into a film. When the film is formed on the outer peripheral surface of the cylindrical member, it is necessary to rotate the substrate, that is, the substrate is not provided with a mechanism for rotating the substrate in the PVD processing apparatus of Patent Document 1 or Patent Document 2. Therefore, in Patent Document 1 or In the PVD processing apparatus of Patent Document 2, it is not possible to form a film as described above.

Further, even in the above-described PVD processing apparatus, for example, the formation of the composite film can be performed by performing the rotation of the substrate in the film formation without performing the revolving of the substrate. For example, a revolving stage that revolves around a revolution axis is provided in a vacuum chamber, and a revolving stage that rotates around a rotation axis parallel to the revolution axis is provided on the revolving stage, and the substrate is mounted on the rotation stage. The composite film can be formed on the surface of the substrate by rotating and revolving the substrate and by providing different types of evaporation sources on the radially outer side of the revolution stage.

However, even when the substrate is rotated and revolved using a device having the above-described self-revolving function, when the rotation ratio (gear ratio) of the self-rotating stage to the revolution table is not set to an appropriate value, The problem of a homogeneous composite film cannot be obtained. For example, in the case where the rotation ratio of the rotation stage and the revolution stage is set to an appropriate value, a composite film in which a ring-shaped film layer is formed into a concentric shape can be obtained, but in the rotation stage and the revolution stage. When the rotation ratio is not set to an appropriate value, there is a fear that a composite film having a structure having an uneven structure is formed. Specifically, there is a fear that a C-shaped film which is partially deficient in one of the circumferential directions of the ring is contained in the composite film or a film which partially overlaps one of the circumferential directions in the ring.

[Previous Technical Literature]

[Patent Literature]

Patent Document 1: Japanese Patent Laid-Open No. Hei 11-200042

Patent Document 2: Japanese Patent No. 2836876

An object of the present invention is to provide a PVD processing apparatus and a PVD processing method which can form an excellent composite film on the outer peripheral surface of the substrate by rotating and revolving the substrate.

The present invention provides a PVD processing apparatus for forming a film on a surface of a plurality of substrates, comprising: a vacuum chamber for accommodating the plurality of substrates; and a revolving stage disposed in the vacuum chamber Indoor to support the plurality of substrates while revolving the substrates around the axis of revolution; and a plurality of spinning stages supporting the substrates of the plurality of substrates while the substrate is in the a rotating platform is rotated around a rotation axis parallel to the revolution axis; and a plurality of targets are formed by different types of film forming materials, respectively disposed on a radially outer side of the revolution table and in a circumferential direction a plurality of positions separated from each other; and a stage rotating mechanism that rotates the respective transfer stages around the rotation axis in association with the rotation of the revolution stage. The stage rotation mechanism is configured such that a substrate is loaded between the two tangents drawn from the arcs of the respective transfer stages from the center of each of the plurality of targets. The rotation stage rotates at an angle of 180° or more with respect to the revolution table.

Moreover, the present invention provides a method for using a plurality of bases A PVD processing method for forming a film on a surface of a material, comprising: a step of preparing a PVD processing apparatus, the PVD processing apparatus comprising: a vacuum chamber for accommodating the plurality of substrates; and a revolving stage disposed on the vacuum a chamber for supporting the plurality of substrates to revolve around the common axis while supporting the plurality of substrates; and a plurality of targets formed of different types of film forming substances, respectively disposed in the aforementioned revolution a plurality of positions radially outward of the stage and separated from each other in the circumferential direction; and a step of performing a PVD process, wherein the substrate is supported by the revolution carrying stage by a center of the respective targets from the plurality of targets a period of time between the two tangent lines drawn by the circular arc of the outer circumferential surface of each of the base materials, the substrate is wound around the revolving axis parallel to the revolution axis of the revolving stage, and is 180 with respect to the revolving stage. The PVD treatment is performed while rotating at an angle of ° or higher.

1‧‧‧PVD treatment unit

2‧‧‧vacuum chamber

3‧‧‧Revolving stage

4‧‧‧Rotating station

5‧‧‧ Target

6, 16‧‧‧ stage rotating mechanism

7‧‧‧ public axis

8‧‧‧Rotary axis

13‧‧‧ arc

51‧‧‧Target for arc ion plating

52‧‧‧Target for sputtering

A1‧‧‧Blackened area

A2‧‧‧ hollow area

D1, D2‧‧‧ OD

DT‧‧‧ distance

L1, L2‧‧‧ tangent

PA, PB, PC, Pa, Pb, Pc‧‧ position

W‧‧‧Substrate

Fig. 1 is a plan view showing a PVD processing apparatus according to an embodiment of the present invention.

Fig. 2A is a plan view showing a state of film formation of a substrate when the respective transfer stages of the PVD processing apparatus are not rotated.

Fig. 2B is a plan view showing a state of film formation of the substrate when the respective transfer stages are rotated.

Fig. 3A is a perspective view showing the appearance of a main part of a PVD processing apparatus used in the examples and comparative examples of the present invention.

Figure 3B shows a top view of the main part of the device shown in Figure 3A Figure.

Fig. 4A is a plan view showing the stage rotating mechanism of the foregoing embodiment.

Fig. 4B is a plan view showing the stage rotating mechanism of the above comparative example.

Fig. 5A is a graph showing the results of film thickness measurement of the foregoing examples.

Fig. 5B is a graph showing the results of measurement of the film thickness of the above comparative example.

Fig. 6A is a cross-sectional plan view showing a composite film formed on the outer peripheral surface of the substrate in the embodiment of the present invention.

Fig. 6B is a cross-sectional plan view showing a composite film formed on the outer peripheral surface of the substrate in the conventional example.

Fig. 7 is a cross-sectional plan view showing a composite film formed on the outer peripheral surface of the substrate in the embodiment of the present invention, and a part of the film in the circumferential direction of the film is superposed on each other.

The PVD processing apparatus 1 according to the embodiment of the present invention will be described with reference to the drawings. In the PVD processing apparatus 1 of the present embodiment, two or more PVD methods are used alternately or in the same type of PVD method or two or more kinds of targets are used simultaneously on the surface of the substrate W. A device for forming a film of a composite film. In the PVD processing apparatus 1 of the embodiment, for example, even in the PVD method It is also possible to form a composite film by using both the arc ion plating method and the sputtering method.

Fig. 1 is a plan view of the PVD processing apparatus 1 of the above embodiment. The PVD processing apparatus 1 includes a vacuum chamber 2, a revolution stage 3, a plurality of rotation stages 4, a plurality of targets 5, and a stage rotation mechanism 6. The vacuum chamber 2 surrounds the processing chamber, and the processing chamber can be evacuated to a vacuum or an extremely low pressure using a vacuum pump or the like (not shown). The revolution stage 3, the plurality of rotation stages 4, the plurality of targets 5, and the stage rotation mechanism 6 are housed in the vacuum chamber 2. The revolution stage 3 revolves the respective substrates W while supporting a plurality of substrates W. The rotation stage 4 rotates the base material W on the revolution stage 3 while supporting the respective base materials W. Each of the targets 5 is formed of a film-forming substance different from each other, and is disposed at a position radially apart from the outside of the revolution stage 3 and separated from each other in the circumferential direction. The stage rotation mechanism 6 rotates the revolution stage 3 and the rotation stage 4 by a predetermined gear ratio.

As shown in Fig. 1, the revolution stage 3 can rotate the revolution stage 3 around the revolution shaft 7 while supporting the plurality of substrates W, and the respective substrates W can be wound around the revolution shaft. In the case of the disk-shaped member which is revolved, the aforementioned revolving shaft 7 is set to an axis extending in the vertical direction in the vacuum chamber 2. Each of the transfer stages 4 is provided at a plurality of (eight in the illustrated example) positions in the circumferential direction in the vicinity of the outer edge of the revolution stage 3, and each of the substrates W is supported. The stage rotation mechanism 6 is disposed on the revolution table 3 The revolving stage 3 is wound around the above-mentioned revolving axis 7 so as to be rotated in the clockwise direction as viewed from the upper side, for example, as indicated by an arrow in the first drawing, whereby the respective base materials W are oriented around the revolving axis 7 The above direction is revolved.

Each of the transfer stages 4 has a disk-shaped member having an outer diameter smaller than the outer diameter of the revolution stage 3, and has an upper surface on which the substrate W can be mounted. The respective transfer stages 4 are driven by the above-described stage rotation mechanism 6 so as to rotate around the rotation shaft 8 which is parallel to the revolution axis 7. The base material W to be mounted on each of the transfer tables 4 includes, for example, a drill or a tapered cone, and has an outer peripheral surface that is curved in an arc shape in the circumferential direction, and a film is formed on the curved outer peripheral surface. Although the substrate W of the present embodiment is an article of a cylindrical body, the substrate to be film-formed according to the present invention is not limited to a cylindrical body. For example, a sharp-shaped conical member at the front end or a substrate set including a plurality of disc-shaped members is integrally formed into a cylindrical shape by laminating the members with each other, and is covered by the present invention. In the "substrate" of the invention.

Each of the targets 5 is made of a material such as Ti (titanium), Al (aluminum), Ni (nickel), or C (carbon) as a film material, and is formed into a plate shape in the present embodiment. The plurality of targets 5 include a target 51 for an arc ion plating film and a target 52 for sputtering, and are formed of film-forming substances different from each other. The target 51 for the arc ion plating film and the target 52 for sputtering are disposed at positions radially apart from the outside of the revolution stage 3 and separated from each other in the circumferential direction. In the example, the target 52 for sputtering is provided on the side of the revolution stage 3 (the upper side of the paper surface of Fig. 1), and the above-mentioned revolution is interposed. The shaft 7 is provided with the target 51 for the arc ion plating film on the side opposite to the opposite side of the sputtering target 52 (the lower side of the paper surface in Fig. 2).

The stage rotation mechanism 6 transmits a rotational driving force generated by a drive motor (not shown) to both of the above-described revolution stage 3 and the rotation stage 4, and rotates the same, and causes each stage 3, 4 Rotate at a predetermined gear ratio.

In the PVD processing apparatus 1 shown in FIG. 1 , eight rotation stages 9 are mounted on the revolution stage 3, but FIG. 4A shows that four rotation stages 9 are mounted on one revolution stage 3 . In the stage rotating mechanism 6 of the embodiment, FIG. 4B shows the stage rotating mechanism 16 as a comparative example thereof.

Specifically, the stage rotating mechanisms 6 and 16 each have a sun gear 9 provided on the side of the revolution carrier 3 and a plurality of rotation gears 10 provided on the side of each of the rotation stages 4 . The sun gear 9 and the respective rotation gears 10 mesh with each other while arranging the respective rotation gears 10 in the circumferential direction around the center gear 9. As shown in FIGS. 4A and 4B, the rotation stage can be rotated by various gear ratios with respect to the revolution stage 3 by changing the outer diameter and the number of teeth of the gears for the gears 9 and 10 described above. rotation. The sun gear 9 shown in Fig. 4A is a gear having a large diameter, and the respective rotation gear 10 meshing with the sun gear 9 is a small-diameter gear having a diameter smaller than the diameter of the sun gear 9. The sun gear 9 shown in Fig. 4B is a small-diameter gear, and the respective rotation gear 10 meshing with the sun gear 9 is a large-diameter gear having a larger diameter than the diameter of the sun gear 9.

In the stage rotating mechanism 6, the gear ratio of the sun gear 9 and the rotation gear 10 can be determined in such a manner that the substrate W passes through a plurality of targets 5, i.e., targets, as shown in Fig. 1. The center of each of the targets 51 and 52, specifically, the center of the targets 51 and 52 facing the revolution table 3 is the center in the width direction perpendicular to the revolution axis 7. As shown in FIGS. 2A and 2B, the arcs of the respective transfer stages 4 of the envelopes, and more preferably the two tangent lines L1 drawn by the arcs 13 of the outer peripheral surfaces of the respective substrates W supported by the respective transfer stages 4 are illustrated. In the period between L2 and L5, the respective transfer stages 4 on which the substrate W is mounted are rotated at an angle of 180° or more with respect to the revolution stage 3 described above. In other words, the number of teeth can be set by the self-rotation of the revolution coordinate set on the revolution stage 3 at an angle of 180° or more while the substrate W passes between the tangent lines L1 and L2. ratio.

The sun gear 9 of the present embodiment is provided on the lower side of the revolving stage 3, and is fixed to a different load from the revolving stage 3 while allowing the revolving stage 3 to rotate relative to the sun gear 9. Table base. The sun gear 9 has a tooth row that is arranged around the revolution shaft 7. The respective rotation gears 10 are meshed with the sun gear 9 while being disposed around the sun gear 9 . Each of the revolving gears 10 is supported by the revolving stage 3 so as to be rotatable around the rotation shaft 8 integrally with the rotation stage 4 corresponding thereto. The revolution stage 3 is rotatably driven by the drive motor, and the respective transfer stages 4 coupled to the center gear 9 by interposing the rotation gears are rotatably driven around the rotation shaft 8. That is, in the aforementioned respective rotating gears 10, the drawings are omitted. The drive motor is provided with a rotational driving force, and the rotation gear 10 is moved along the outer circumference of the sun gear 9 by the applied rotational driving force, and both the revolution stage 3 and the rotation stage 4 are rotated.

When PVD processing is performed on a plurality of substrates W by the PVD processing apparatus 1 having the configuration shown in FIG. 1, first, the substrates W are mounted on the respective rotation stages 4 . Then, the revolution stage 4 is rotatably driven around the revolution shaft 7 by the rotational driving force generated by the drive motor. The rotational driving force is also transmitted to the self-rotating stage 4 via the stage rotating mechanism 6, and the rotation of the revolution carrying stage 3 is tracked, and the respective rotating stages 4 are rotated around the rotating shaft 8. As a result, the base material W mounted on the rotation stage 4 revolves around the revolution shaft 7 while rotating around the rotation shaft 8 .

In this case, the above-described stage rotating mechanism 6 is configured such that the substrate W is encased in the circle of the respective transfer stages 4 from the center of each of the plurality of targets 5 and the targets 51 and 52 in the embodiment. During the period between the two tangent lines L1 and L2 pulled by the arc 13, the respective base materials W and the respective transfer tables 4 supported thereby are rotated at an angle of 180 or more with respect to the revolution stage 3. The reason why such a rotation angle should be set will be described with reference to the PVD processing apparatus 1 shown in Figs. 1 and 2 .

First, the film-forming substance is scattered from the center of the electrode surface of the target 52 for sputtering toward the side of the revolution stage 3 (the side of the revolution axis 7) while expanding into a spray shape. More specifically, the film-forming substance flying out from the target 52 for sputtering is scattered from the center of the electrode surface toward the side of the revolution stage 3 so as to expand in a fan shape as shown in FIGS. 2A and 2B. At this time, the most amount of material is scattered to the front side of the target 52 for sputtering, and the amount of scattering The angle toward the vertical line that is erected away from the target 52 is reduced. In other words, the range in which the substance scatters from the target 52 for sputtering is in all directions before the target 52, and is scattered by the tangent L1 from the side opposite to the circular arc 13 of the respective transfer table 4 of the envelope. The substance in the range of the other tangent line L2 can form a film on the surface of the substrate W when the substrate W passes through the scattered film-forming substance.

Here, a case where the spinning stage 4 does not rotate as shown in FIG. 2A is considered. Even in this case, since each of the transfer table 4 and each of the substrates W revolves, one point (a point indicated by a circular symbol in the figure) existing on the outer peripheral surface of the substrate W enters the two by the revolution. The area where the lines L1 and L2 are sandwiched. In other words, the point indicated by the circular symbol in the figure will come to the position Pa shown in Fig. 2A. The film-forming substance scattered from the target 52 for sputtering can reach the outer peripheral surface of the substrate W from this point of time, and the film-forming substance forms a film in the arc-shaped blackened area A1 in FIG. 2A due to deposition. .

Further, even in a region sandwiched by the two tangents L1 and L2, a specific portion on the outer peripheral surface of the substrate W reaches the position Pa, and the specific portion is hidden from the substrate W from the target 52 for sputtering. Since it is on the back side of itself, it is impossible to form a film on the surface of the part.

Further, when the revolving stage 3 continues to rotate, the position of the substrate W is relatively changed in the horizontal plane by the revolution of the target 5 as viewed from the target 5. In other words, the position of the absolute coordinate system of the substrate W disposed on the revolution table 3 causes the substrate W to change the target 5 even if it does not rotate, and thus is formed on the outer surface of the substrate W. Membrane material deposited The site will also change on the outer perimeter.

For example, focusing on a specific point on the outer peripheral surface of the substrate W, the deposition of the film-forming substance is considered. The specific point on the outer peripheral surface indicated by the circle symbol in Fig. 2A is sequentially moved to the positions Pa, Pb, Pc in the figure when the revolution stage 3 is revolved. In other words, the specific point is moved from the position on the tangent line L1 to the position on the other tangent line L2 via the position of the front surface of the target 5. On the other hand, when the relative position of the substrate W to the target 5 changes to the position Pc, the film forming substance is deposited at a position adjacent to the blackened area A1, and the blackened area A1 is removed. A new film is formed in the hollowed out area A2 in addition to the film.

When the substrate W is not rotated as described above, even if the film of the blackened region A1 shown in FIG. 2A and the film of the hollowed region A2 are combined, it is impossible to cover the outer peripheral surface of the substrate W over the entire circumference. . Therefore, in the case shown in Fig. 2A, for example, as shown in Fig. 6B, there is a fear that a film which is partially damaged in the circumferential direction is formed on the outer peripheral surface of the substrate W.

However, in the case where the spinning table 4 rotates at a sufficient angle as the whirling of the revolution stage 3 as shown in FIG. 2B, the film of the blackened area A1 and the film of the hollowed area A2 can be combined. The outer peripheral surface of the substrate W is covered over the entire circumference. As a result, for example, a composite film having a homogeneous structure can be formed on the outer peripheral surface of the substrate W as shown in FIG. 6A. Specifically, the revolving gear 9 and the rotation gear 10 of the above-described stage rotating mechanism 6 can be provided such that the self-rotating stage 4 is opposed to the revolving stage 3 during the period in which the substrate W passes between the two tangent lines L1 and L2. Angle of 180° or more The gear ratio for the rotation. The gear ratio is set such that the self-rotating stage 4 is rotated at a wider angle and the range of the film of the hollowed-out area A2 can be increased by the portion, whereby the outer surface of the substrate W can be formed without interruption. And continuous film.

For example, consider a case where a point indicated by a circular symbol in FIG. 2B is a position PC passing through the position PA and the position PB in the drawing. In this position PC, the film is formed on the outer peripheral surface of the substrate W over a peripheral surface of the substrate W over a region 180° wider than the hollow region A2 shown in FIG. 2A. In other words, the outer peripheral surface of the substrate W can be covered over the entire circumference as long as the film of the blackened area A1 and the film of the hollowed area A2 are combined. Therefore, as shown in Fig. 6A, an uninterrupted and continuous film can be formed on the outer peripheral surface of the substrate W over the entire circumference, and a film having a homogeneous structure can be formed on the outer peripheral surface of the substrate W.

In the above-described example, the target material 52 for sputtering is formed in a continuous direction without being interrupted in the circumferential direction. However, the target 51 for the arc ion plating film is similarly provided to satisfy the above relationship. By operating the stage rotating mechanism 6, a continuous film that is continuous without interruption can be formed in the circumferential direction, and a composite film having a homogeneous structure can be formed on the outer peripheral surface of the substrate W.

Further, even if a continuous film can be formed over the entire circumference of the substrate W over the entire circumference, when the portion which is initially formed in the film and the portion where the film is formed are partially overlapped as shown in Fig. 7, there is also The film thickness of the film is uneven, and it is difficult to form a composite film having a homogeneous structure.

In such a case, the rotation stage 4 on which the substrate W is mounted during the period in which the substrate W passes between the two tangents L1 and L2 is 360° or more, and more preferably 720° or more with respect to the revolution stage 3 . It is sufficient to set the gear ratio by performing the rotation. Thus, the thickness deviation of the film can be suppressed, and a composite film having a more homogeneous structure can be formed. Specifically, when the substrate W passes between the two tangents L1 and L2, the angle at which the rotation stage 4 rotates relative to the revolution stage 3, that is, the rotation angle is 180°, although ±50 occurs in the thickness of the film. The deviation is about %, but the deviation in the case where the rotation angle is 360° can be suppressed to about ±30%, and the deviation in the case of 720° can be suppressed to about ±10%.

[Examples]

Next, the effects of the PVD processing method of the present invention will be described in more detail using examples and comparative examples.

As shown in FIGS. 3A and 3B, in the PVD processing apparatus 1 for experiment, a revolving stage 3 having an outer diameter D1 of 400 mm and a 160 mm each were used. The four rotation stages 4 of the outer diameter D2, and the rotation stages 4 of these are arranged on the revolution stage 3 at equal intervals in the circumferential direction. The substrate W mounted on each of the transfer stages 4 has a diameter of 160 mm. In the cylindrical body, in the examples and the comparative examples, a film can be formed by an arc ion plating method on the outer peripheral surface of the substrate W.

The target 51 for the arc ion plating method is a circular plate having a diameter of 100 mm, and is disposed at a position separated by a distance DT of only 160 mm from the outer periphery of the revolution stage 3 toward the radially outer side. Target for the arc 51 was supplied with an arc current of 150 A, and nitrogen gas was supplied to the processing chamber of the vacuum chamber 2 until the pressure in the processing chamber became 3 Pa, whereby film formation was performed.

In the embodiment and the comparative example, the gear ratios of the sun gear 9 provided on the revolution stage 3 and the rotation gear 10 provided in the rotation stage 4 are different from each other. These gear ratios are shown in Table 1. In the stage rotating mechanism 6 of the embodiment shown in Fig. 4A, there is 60 mm The four self-rotating gears 10 of the diameter are paired with 180mm The center gear 9 of the diameter rotates and revolves while meshing, and the rotation angle of the revolution coordinate system is 337.5°. In the stage rotating mechanism 16 of the comparative example shown in FIG. 4B, it has 150 mm. The four self-rotating gears of the diameter are paired with 90mm The center gear 9 of the diameter rotates and revolves while meshing, and the rotation angle of the revolution coordinate system is 67.5°.

In the above-described examples and comparative examples, the film of the film formed on the surface of the substrate W was measured while the substrate W was revolved in the range of 180° from the position P1 to the position P2 in the third drawing. thick. The measurement results of the film thicknesses of the examples and the comparative examples are respectively shown in FIG. 5A. And Figure 5B. Here, the value of the film thickness shown by the vertical axis of the 5A and 5B drawings refers to the relative value of the film thickness of the film formed when the substrate W is positioned on the front surface of the target 5, and FIG. 5A. The position in the circumferential direction indicated by the horizontal axis of Fig. 5B is expressed by the angle at which the substrate W is placed at the front side of the target 5 at assuming 0°.

As shown in Fig. 5A, the film thickness of the film formed in the foregoing embodiment is changed in the range of -180 to +180 in the circumferential direction by 0.7 to 1.0, and even in the circumferential direction. There was no significant change in the film thickness at the location. On the other hand, as shown in FIG. 5B, the film thickness of the film formed in the above comparative example is violently in the range of -180° to -100° in the circumferential direction and +100° to +180° in the circumferential direction. Decreased, and the change in film thickness is remarkable. It can be understood that the circumferential position is in the vicinity of -180° or in the vicinity of +180°, and the film thickness is reduced to around 0, and film formation is hardly performed.

In this case, it can be understood that the substrate W can be rotated at an angle of 180° or more with respect to the revolution stage 3 while the substrate W passes between the two tangent lines L1 and L2. The outer peripheral surface is formed with an uninterrupted and continuous film over the entire circumference, and a composite film having excellent film thickness uniformity can be formed on the outer peripheral surface of the substrate W.

However, the present invention is not limited to the above embodiments, and the shape, structure, material, combination, and the like of each member can be appropriately changed as long as the essence of the invention is not changed. Further, the matters not disclosed in the embodiments disclosed herein, such as operating conditions, operating conditions, various parameters, size, weight, volume, and the like of the components, are not generally deviated from those of ordinary skill in the art to which the invention pertains. Scope, but adoption Any matter that is generally known to those skilled in the art to which the invention pertains can be easily considered.

As described above, according to the present invention, it is possible to provide a PVD processing apparatus and a PVD processing method which can form an excellent composite film on the outer peripheral surface of the substrate by rotating and revolving the substrate.

The present invention provides a PVD processing apparatus for forming a film on a surface of a plurality of substrates, comprising: a vacuum chamber for accommodating the plurality of substrates; and a revolving stage disposed in the vacuum chamber Indoor to support the plurality of substrates while revolving the substrates around the axis of revolution; and a plurality of spinning stages supporting the substrates of the plurality of substrates while the substrate is in the a rotating platform is rotated around a rotation axis parallel to the revolution axis; and a plurality of targets are formed by different types of film forming materials, respectively disposed on a radially outer side of the revolution table and in a circumferential direction a plurality of positions separated from each other; and a stage rotating mechanism for rotating the respective transfer stages around the rotation axis. The stage rotation mechanism is configured such that the substrate is loaded between two tangent lines which are drawn from arcs of the respective transfer stages from the center of each of the plurality of targets. The aforementioned rotation stage rotates at an angle of 180° or more with respect to the aforementioned revolution stage.

Moreover, the present invention provides a PVD processing method for forming a film on a surface of a plurality of substrates, the method comprising: a step of preparing a PVD processing apparatus, the PVD processing apparatus comprising: a vacuum chamber, Storing the plurality of substrates; and a revolution carrying stage disposed in the vacuum chamber for supporting the plurality of substrates while supporting the plurality of substrates The substrate is revolved around the revolution axis; and the plurality of targets are formed of different types of film-forming substances, and are respectively disposed at a plurality of positions radially outward of the revolution stage and separated from each other in the circumferential direction. And a step of performing a PVD process, wherein the substrate passes through two tangents drawn from an arc of an outer circumferential surface of each of the substrates supported by the revolution carrying stage from a center of each of the plurality of targets During the period of time, the substrate is rotated while rotating at an angle of 180° or more with respect to the revolution stage around the rotation axis parallel to the revolution axis of the revolution stage, and PVD processing is performed.

According to the PVD processing apparatus and the PVD processing described above, it is possible to form a uniformity on the outer peripheral surface of the substrate by rotating the substrate W between the two tangent lines at an angle of 180° or more with respect to the revolution stage. Excellent film. In this manner, a composite film having excellent film thickness uniformity can be formed on the outer peripheral surface of the substrate.

Preferably, the stage rotation mechanism of the PVD processing apparatus includes a center gear having a tooth row arranged around the revolution axis, and being fixed to allow the revolution stage to rotate relative to the center gear; And a plurality of rotation gears that rotate around the rotation axis integrally with the respective transfer stages, and rotate the respective transfer stages around the rotation axis in conjunction with rotation of the revolution stage around the revolution axis In one aspect, the respective rotating gears are disposed around the sun gear and a stage rotating mechanism that meshes with the sun gear. In this case, the above-described rotation stage on which the substrate is mounted can be rotated at an angle of 180° or more with respect to the revolution stage while the substrate passes between the two tangent lines. Center gear and the aforementioned respective turn The gear ratio of the gear can be.

1‧‧‧PVD treatment unit

4‧‧‧Rotating station

5‧‧‧ Target

7‧‧‧ public axis

8‧‧‧Rotary axis

13‧‧‧ arc

51‧‧‧Target for arc ion plating

A1, A2‧‧‧ area

L1, L2‧‧‧ tangent

PA, PB, PC‧‧‧ position

W‧‧‧Substrate

Claims (3)

A PVD processing apparatus for forming a film on a surface of a plurality of substrates, comprising: a vacuum chamber for accommodating the plurality of substrates; and a revolving stage disposed in the vacuum chamber for one side Supporting the plurality of substrates while revolving the substrates around the revolution axis; and a plurality of rotation stages supporting the substrates on the plurality of substrates while the substrate is wound on the revolution table The revolving shaft rotates in parallel with the rotation axis; and the plurality of targets are formed of different types of film forming substances, and are respectively disposed on the outer side of the revolution carrying stage and separated from each other in the circumferential direction. And a stage rotating mechanism that rotates the respective transfer stages around the rotation axis along with rotation of the revolution stage, the stage rotation mechanism is configured to pass the substrate from each of the plurality of targets The center of the enveloping between the two tangent lines drawn by the arcs of the respective transfer stages causes the rotation stage on which the substrate is mounted to enter the angle of 180° or more with respect to the revolution stage. Rotation. The PVD processing apparatus according to claim 1, wherein the stage rotating mechanism includes a center gear having a tooth row arranged around the revolution axis, and is fixed to allow the revolution carrier to face the a state in which the sun gear rotates; and a plurality of rotation gears integrally rotate around the rotation axis with the respective transfer tables, wherein the respective rotations can be performed in conjunction with the rotation of the revolution table around the revolution axis The rotation gear rotates around the rotation axis, and the respective rotation gears are disposed around the sun gear and mesh with the sun gear, and the gear ratio of the sun gear to the respective rotation gears is set to pass the foregoing two pieces on the substrate. The period between the tangential lines causes the rotation stage on which the substrate is mounted to rotate at an angle of 180° or more with respect to the revolution stage. A PVD processing method for forming a film on a surface of a plurality of substrates, comprising: a step of preparing a PVD processing apparatus, the PVD processing apparatus comprising: a vacuum chamber for accommodating the plurality of substrates; a revolution carrying stage disposed in the vacuum chamber for supporting the plurality of substrates while revolving the substrates around the revolution axis; and the plurality of targets formed by different types of film forming substances And a plurality of positions respectively disposed on a radially outer side of the revolution stage and separated from each other in the circumferential direction; and a step of performing a PVD process on the substrate through the center of each of the plurality of targets a period of time between the two tangent lines drawn by the circular arc of the outer circumferential surface of each of the base materials, the substrate is wound around the revolving axis parallel to the revolution axis of the revolving stage, and is 180 with respect to the revolving stage. The PVD treatment is performed while rotating at an angle of ° or higher.