TW201423834A - Bonding system, bonding method and computer memory medium - Google Patents

Abstract

In the bonding system of the present invention, the bonding of the substrate to be processed and the supporting substrate is appropriately performed, and the occupied area of the bonding system is reduced. The joining system 1 has a loading and unloading station 2 and a processing station 3. The processing station 3 has a coating device 60 that applies an adhesive to the wafer W to be processed, heat treatment devices 61 to 66, and heat treatment of the processed wafer W to which the adhesive has been applied, and a position adjusting device 52. Performing position adjustment of the heat-treated processed wafer W, performing position adjustment of the support wafer S, and inverting the front and back surfaces of the support wafer S; a plurality of bonding devices 40, 41 by the bonding And the wafer W and the supporting wafer S are pressed and bonded to each other; and the wafer transporting regions 42 and 67 are used for transporting the processed wafer W, the supporting wafer S, and the stacked wafer T.

Description

Bonding system, bonding method and computer memory medium

The present invention relates to a bonding system in which substrates are bonded to each other by an adhesive, a bonding method using the bonding system, a program, and a computer memory medium.

In recent years, for example, in the manufacturing process of a semiconductor device, a semiconductor wafer (hereinafter referred to as "wafer") has continued to have a large diameter. Further, in a specific step such as mounting, the wafer is required to be thinned. Further, for example, when a wafer having a large diameter and a thin wafer is directly transported or polished, there is a possibility that warpage or cracking occurs in the wafer. Therefore, for example, in order to reinforce the wafer, a wafer or a glass substrate such as a support substrate is attached to the wafer.

Bonding of such a wafer to a support substrate is performed, for example, by using a bonding system, by interposing an adhesive between the wafer and the support substrate. The bonding system has, for example, a coating device for applying an adhesive to a wafer, a heat treatment device for heating a wafer to which the adhesive has been applied, and a plurality of bonding devices for bonding the wafer with an adhesive The support substrate is pressed and joined. Further, each of the bonding devices has a pre-processing area and a bonding area. Further, in the bonding apparatus, for example, the position adjustment of the wafer is performed in the pre-processing region, and the position adjustment of the support substrate is performed, and the front and back surfaces of the support substrate are reversed, and the wafer and the support are supported in the bonding region. The substrate is pressed and joined (Patent Document 1).

[Previous Technical Literature]

[Patent Literature]

Patent Document 1

Japanese Special Open 2012-69900

However, since the bonding apparatus described in Patent Document 1 has a pre-processing region and a bonding region, respectively, the area occupied by each bonding device is increased. Therefore, the total area occupied by the joint system having a large number of joining devices is also increased.

In view of the above, the present invention has an object of appropriately performing bonding of a substrate to be processed and a supporting substrate in a bonding system, and reducing an occupied area of the bonding system.

In order to achieve the foregoing object, the present invention is a bonding system in which substrates are bonded to each other by an adhesive, characterized in that it comprises: a processing station for performing predetermined processing on the substrate; and a transporting station, a substrate or a substrate The superposed substrates joined to each other are transported out of the processing station; and the processing station includes: a coating device for applying the adhesive to a substrate; and a heat treatment device for a substrate coated with the adhesive Performing heat treatment; position adjusting device, performing position adjustment of the heat-treated substrate, performing position adjustment of another substrate bonded to the substrate, and inverting the front and back surfaces of the other substrate; And bonding the substrates on which the position adjustment has been performed by the adhesive; and conveying a region for transporting the substrate or the laminated substrate to the coating device, the heat treatment device, the position adjustment device, and the majority Engagement device.

In accordance with the present invention, a position adjustment device is provided for a plurality of engagement devices in the engagement system, i.e., the position adjustment device is configured to be common to a plurality of engagement devices. Therefore, compared with the conventional one-to-one arrangement of the engagement device and the position adjustment device, the occupied area of the engagement system can be reduced to the extent that the number of position adjustment devices is reduced. Moreover, the manufacturing cost of the joint system can be reduced accordingly. Further, in the bonding system, an adhesive is applied to a substrate in a coating device (coating step), and a substrate on which the adhesive has been applied in the coating step is transported to the heat treatment In the heat treatment apparatus, a substrate is subjected to heat treatment (heat treatment step), and a substrate which has been subjected to heat treatment in the heat treatment step is transported to a position adjusting device, and position adjustment of a substrate is performed in the position adjusting device (first position adjustment) Step), in the position adjusting device, performing position adjustment of another substrate joined to one substrate, and inverting the front and back surfaces of the other substrate (second position adjusting step), and performing the first position adjustment One substrate of the step is transported to the bonding device, and the other substrate that has undergone the second position adjusting step is transported to the bonding device, in which the substrate is pressed and bonded to the other substrate by the bonding agent (joining step). Since the coating step, the heat treatment step, the first position adjustment step, the second position adjustment step, and the bonding step are performed by one bonding system as described above, a series of bonding processes can be appropriately performed.

The processing station may further include: an outer peripheral cleaning device that cleans a peripheral portion of a substrate that has been subjected to heat treatment in the heat treatment device.

The processing station may also have a temperature adjustment device that adjusts the temperature of the superposed substrate that has been joined at the bonding device.

The processing station may also have an inspection device that performs at least an inspection of the interior of the laminated substrate or an inspection of the bonded state of the stacked substrates.

The position adjusting device can also perform position adjustment on a substrate before the coating device applies the adhesive.

In another aspect, the present invention is a bonding method in which substrates are bonded to each other by an adhesive, and the substrates are bonded to each other by an adhesive, characterized in that it comprises the following steps: a coating step, in the coating device, The adhesive is applied to a substrate; a heat treatment step of transporting a substrate on which the adhesive has been applied in the coating step to a heat treatment device, wherein the substrate is heat treated; the first position And an adjusting step of transporting a substrate that has been subjected to the heat treatment in the heat treatment step to the position adjusting device, wherein the position adjustment of the substrate is performed in the position adjusting device; and the second position adjusting step, in the position adjusting device, performing Adjusting the position of the other substrate to which the one substrate is bonded, and inverting the front and back surfaces of the other substrate; the bonding step, a substrate on which the first position adjustment step has been performed is transported to the bonding device, and another substrate on which the second position adjustment step has been performed is transported to the bonding device, in which the bonding device The substrate is press-bonded to the other substrate; and in the bonding system including the coating device, the heat treatment device, the position adjusting device, and a plurality of the bonding devices, the plurality of substrates and the plurality of substrates are parallel in parallel The other substrate performs the bonding step.

After the heat treatment step and before the first position adjustment step, the substrate may be transported to the outer peripheral portion cleaning device, and the outer peripheral portion cleaning device may wash the outer peripheral portion of the substrate.

The laminated substrate may also be transported to the temperature adjustment device after the bonding step, and the temperature adjustment device adjusts the temperature of the laminated substrate.

After the bonding step, the laminated substrate may be transported to an inspection device in which at least the inspection of the inside of the laminated substrate or the inspection of the bonded state of the laminated substrate is performed.

A position adjustment of a substrate before the application of the adhesive may be performed in the position adjusting device before the coating step.

Further, according to another aspect of the present invention, a computer memory medium is provided which is readable and stores a program for operating on a computer controlling a control portion of the joint system to cause the joint system to perform the joint method.

According to the present invention, the bonding between the substrate to be processed and the supporting substrate can be appropriately performed in the bonding system, and the area occupied by the bonding system can be reduced, and the manufacturing cost of the bonding system can be reduced.

1‧‧‧ joint system

2‧‧‧Transported to the outbound station

3‧‧‧ Processing station

10‧‧‧匣Box mounting table

11‧‧‧匣Box

20‧‧‧ Wafer Transport Department

21‧‧‧Transportation

22‧‧‧ Wafer transport device

30‧‧‧temperature adjustment device

31, 32‧‧‧Transit device

40, 41‧‧‧ joint device

42‧‧‧1st wafer transport area

43‧‧‧1st wafer transport device

50, 51‧‧‧Transit device

52‧‧‧ Position adjustment device

60‧‧‧ Coating device

61~66‧‧‧ heat treatment unit

67‧‧‧2nd wafer transport area

68‧‧‧2nd wafer transport device

100‧‧‧1st holding unit 100

101‧‧‧2nd holding unit

110‧‧‧DC high voltage power supply

111‧‧‧1st heating mechanism

112‧‧‧1st cooling mechanism

113‧‧‧Insulation board

120‧‧‧lifting pin

121‧‧‧ Lifting and Driving Department

122‧‧‧through holes

130‧‧‧Support components

140‧‧‧DC high voltage power supply

141‧‧‧2nd heating mechanism

142‧‧‧2nd cooling mechanism

150‧‧‧Support board

160‧‧‧ Pressurizing mechanism

161‧‧‧ Pressure vessel

162‧‧‧ Fluid supply tube

163‧‧‧ Fluid supply source

164‧‧‧Support board

170‧‧‧1st Shooting Department

171‧‧‧2nd Shooting Department

180‧‧‧Processing container

181‧‧‧lower chamber

182‧‧‧ upper chamber

183‧‧‧Seal

190‧‧‧Mobile agencies

191‧‧‧ cam

192‧‧‧ shaft

193‧‧‧Rotary Drive Department

200‧‧‧Relief mechanism

201‧‧‧ suction pipe

202‧‧‧Negative pressure generating device

210‧‧‧Processing container

220‧‧‧ holding arm

221‧‧‧Retaining members

222‧‧ ‧ gap

223‧‧‧1st drive department

224‧‧‧2nd drive department

225‧‧‧Support column

230‧‧‧ Position adjustment mechanism

231‧‧‧Support board

232‧‧‧Abutment

233‧‧Detection Department

240‧‧‧Processing container

250‧‧‧Rotary chuck

251‧‧‧ chuck drive department

252‧‧‧ cup body

253‧‧‧Draining tube

254‧‧‧Exhaust pipe

260‧‧‧ Track

261‧‧‧Body

262‧‧‧Adhesive nozzle

263‧‧‧Nozzle Drive Department

264‧‧‧Standing Department

265‧‧‧Supply tube

266‧‧‧Adhesive supply

264‧‧‧Supply equipment group

267‧‧‧Supply equipment group

270‧‧‧Processing container

271‧‧‧ gas supply port

272‧‧‧ gas supply source

273‧‧‧ gas supply pipe

274‧‧‧Supply equipment group

275‧‧‧ suction port

276‧‧‧Negative pressure generating device

277‧‧‧ suction pipe

280‧‧‧ heating department

281‧‧‧ Temperature Regulation Department

290‧‧‧Hot board

291‧‧‧Retaining members

292‧‧‧Support ring

293‧‧‧heating mechanism

300‧‧‧lifting pin

301‧‧‧ Lifting and Driving Department

302‧‧‧through holes

310‧‧‧temperature adjustment board

311‧‧‧Slit

312‧‧‧Support arm

313‧‧‧ Drive Department

314‧‧‧ Track

320‧‧‧lifting pin

321‧‧‧ Lifting and Driving Department

350‧‧‧Control Department

400‧‧‧External cleaning device

410‧‧‧Processing container

420‧‧‧Rotary chuck

421‧‧‧ chuck drive department

422‧‧‧ Track

430‧‧‧Solvent Supply Department

431‧‧‧ upper nozzle

432‧‧‧ lower nozzle

431a‧‧‧ top

431b‧‧‧ Sidewall

432a‧‧‧ bottom

432b‧‧‧ Sidewall

433, 434‧‧‧ supply port

435‧‧‧Supply tube

436‧‧‧ solvent supply source

437‧‧‧Supply equipment group

440‧‧‧Draining tube

441‧‧‧ ejector

450‧‧‧Inspection device

460‧‧‧Processing container

470‧‧‧lifting pin

471‧‧‧Support components

472‧‧‧ Lifting and Driving Department

480‧‧‧1st holding unit

481‧‧‧1st support member

482‧‧‧2nd support member

483‧‧‧3rd support member

484‧‧‧4th support member

485‧‧‧Gap section

486‧‧‧Retaining members

490‧‧‧ components

491‧‧‧ Drive Department

492‧‧‧ Track

500‧‧‧2nd holding unit

501‧‧‧ Drive Department

510‧‧‧Infrared Irradiation Department

520‧‧‧Photography Department

521‧‧‧Support components

530, 531‧‧ direction conversion department

532‧‧‧Support components

533‧‧‧1st mirror

534‧‧‧2nd mirror

535‧‧‧Cylindrical lens

536‧‧‧Diffuser

540‧‧‧displacement meter

541‧‧‧Location Detection Agency

600‧‧‧ Coating device

601‧‧‧ Heat treatment unit

610‧‧‧Joining device

A1~A11‧‧‧Steps

C _W , C _S , C _T ‧‧‧ shipped in and out of the box

G‧‧‧Adhesive

G _E ‧‧‧Outside adhesive

P1‧‧‧ delivery position

P2‧‧‧Check location

S‧‧‧Support wafer

S _J , W _J ‧‧‧ joint surface

S _N , W _N ‧‧‧ non-joined surface

T, T ₁ ~T ₄ , T _n ‧‧‧ laminated wafer

W‧‧‧Processed Wafer

Fig. 1 is a plan view showing the outline of the configuration of the joining system of the embodiment.

Fig. 2 is a side view showing the outline of the internal structure of the joining system of the embodiment.

Figure 3 is a side view of the processed wafer and the support wafer.

Fig. 4 is a longitudinal cross-sectional view showing a schematic configuration of a joining device.

Fig. 5 is a longitudinal cross-sectional view showing a schematic configuration of a joining device.

Fig. 6 is a plan view showing a schematic configuration of a second holding portion and a moving mechanism thereof.

Fig. 7 is a schematic cross-sectional view showing the configuration of a position adjusting device.

Fig. 8 is a longitudinal cross-sectional view showing a schematic configuration of a position adjusting device.

Fig. 9 is a longitudinal cross-sectional view showing a schematic configuration of a position adjusting device.

Fig. 10 is a schematic side view showing the configuration of a holding arm and a holding member.

Fig. 11 is a longitudinal cross-sectional view showing the outline of a configuration of a coating device.

Fig. 12 is a schematic cross-sectional view showing the configuration of a coating device.

Fig. 13 is a longitudinal cross-sectional view showing the outline of a configuration of a heat treatment apparatus.

Fig. 14 is a schematic cross-sectional view showing the configuration of a heat treatment apparatus.

Figure 15 is a flow chart showing the main steps of the joining process.

Fig. 16 is an explanatory view showing a pattern in which a wafer to be processed is bonded to a supporting wafer.

Fig. 17 is a longitudinal cross-sectional view showing the outline of the configuration of the outer peripheral cleaning device.

Fig. 18 is a schematic cross-sectional view showing the configuration of the outer peripheral cleaning device.

19 is a longitudinal cross-sectional view showing a schematic configuration of a solvent supply unit.

Fig. 20 is a schematic cross-sectional view showing the configuration of an inspection apparatus.

Fig. 21 is a longitudinal cross-sectional view showing the outline of the configuration of the inspection apparatus.

FIG. 22 is an explanatory view showing a path of infrared rays between the infrared ray irradiation unit and the imaging unit.

Fig. 23 is an explanatory view showing the appearance of the displacement of the outer side surface of the upper wafer and the lower wafer using a displacement meter.

Fig. 24 is a plan view showing the outline of a configuration of a joining system according to another embodiment.

Fig. 25 is a plan view showing a schematic configuration of a joining system according to another embodiment.

Fig. 26 is a plan view showing a schematic configuration of a joining system according to another embodiment.

[Preferred form of implementing the invention]

Embodiments of the present invention will be described below. Fig. 1 is a plan view showing the outline of the configuration of the joining system 1 of the present embodiment. Fig. 2 is a schematic side view showing the internal structure of the joining system 1.

In the bonding system 1, as shown in FIG. 3, the processed wafer W as a substrate to be processed is bonded to a supporting wafer S as a supporting substrate by, for example, an adhesive G. Hereinafter, in the wafer W to be processed, a surface to be bonded to the support wafer S by the adhesive G is referred to as a "joining surface W _J " as a front surface, and a surface opposite to the bonding surface W _J is referred to as a surface It is the "non-joining surface W _N " as the back side. Similarly, in the support wafer S, a surface joined to the wafer W to be processed by the adhesive G is referred to as a "joining surface S _J " as a front surface, and a surface opposite to the bonding surface S _J is referred to as a surface. As the "non-joining surface S _N " on the back side. Further, in the bonding system 1, the wafer W to be processed is bonded to the supporting wafer S to form a superposed wafer T as a superposed substrate. Further, the wafer to be processed W is a wafer of a product, for example, a plurality of circuits are formed on the bonding surface W _J , and the non-joining surface W _{N is} subjected to polishing processing. Further, the support wafer S has the same diameter as the diameter of the wafer W to be processed, and supports the wafer of the wafer W to be processed. In the present embodiment, a case where a substrate is supported by a wafer will be described, and another substrate such as a glass substrate may be used.

As shown in FIG. 1, the joint system 1 is integrally connected, for example, to be transported into and out of the station 2, and transported to and from the outside of the cassette C _W , C _S , C _T , the cassette C _W , C _S and C _T respectively can accommodate a plurality of processed wafers W, a plurality of supporting wafers S, and a plurality of stacked wafers T; and a processing station 3 having a wafer W to be processed, a supporting wafer S, and a stacking The wafer T applies various processing means for a predetermined process.

The transport-in/out station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the X direction (up and down direction in FIG. 1). Such cassette mounting plate 11 may engage an external system for carrying in a cassette C _W, C _S, C _W placed on the cassette when _{C T, C S, C T} . In this manner, the transport-in/out station 2 is configured to hold a large number of processed wafers W, a plurality of support wafers S, and a plurality of stacked wafers T. Further, the number of the cassette mounting plates 11 is not limited to the embodiment, and can be arbitrarily determined. Also, one cassette can be used as a defective wafer. That is, a cassette that can separate a wafer that is defective in the bonding of the processed wafer W and the supporting wafer S with other normal laminated wafers T can be separated. In the present embodiment, in a plurality of cassettes C _T , one cassette C _{T is} used as a defective wafer recovery, and another cassette C _{T is} used as a normal stacked wafer T.

The transport-in/out station 2 is provided with a wafer transfer unit 20 adjacent to the cassette mount 10. The wafer transfer unit 20 is provided with a freely moving wafer transfer device 22 on the transport path 21 extending in the X direction. The wafer transfer device 22 is also freely movable in the vertical direction and around the vertical axis (θ direction), and the cassettes C _W , C _S , and C _T on the respective cassette mounting plates 11 and the temperature of the processing station 3 described later. The process wafer W, the support wafer S, and the superposed wafer T are transported between the adjustment device 30 and the transition devices 31 and 32.

The processing station 3 is provided on the side of the transport-in/out station 2 (the Y-direction negative direction side in FIG. 1): a temperature adjusting device 30 for performing temperature adjustment of the laminated wafer T; and a processed wafer W and a supporting wafer S. The wafer T transfer device 31, 32 is superposed. As shown in FIG. 2, the temperature adjustment device 30 and the relay devices 31 and 32 are provided in two layers in this order from the bottom.

As shown in FIG. 1, on the positive side of the Y-direction of the relay devices 31 and 32, bonding devices 40 and 41 are provided, and the processed wafer W and the supporting wafer S are pressed by the bonding agent G to be bonded. . The joining device 40 is disposed on the negative side in the X direction of the relay devices 31 and 32, and the joining device 41 is disposed on the positive side in the X direction of the relay devices 31 and 32. Further, the number of devices of the joining devices 40, 41 or the arrangement of the vertical direction and the horizontal direction can be arbitrarily set.

The first wafer transfer region 42 is formed in a region between the bonding devices 40 and 41 (X direction) and in a region on the positive side in the Y direction of the relay devices 31 and 32. For example, the first wafer transfer device 43 is disposed in the first wafer transfer region 42.

The first wafer transfer device 43 has a transfer arm that is freely movable in, for example, a vertical direction, a horizontal direction (Y direction, and an X direction) and a vertical axis. The first wafer transfer device 43 can move in the first wafer transfer region 42 and transport the processed wafer W, the support wafer S, and the stacked wafer T to the surrounding temperature adjustment device 30 and the relay device 31. 32, the joining devices 40, 41, and the relay devices 50, 51 described later.

The wafer W to be processed and the intermediate wafer transfer devices 50 and 51 are provided on the positive side in the Y direction of the first wafer transfer region 42. As shown in FIG. 2, the relay devices 50 and 51 are provided in two layers in this order from the bottom.

As shown in FIG. 1 , the negative direction side of the X-direction of the relay devices 50 and 51 is provided with: a position adjusting device 52 for performing position adjustment of the processed wafer W, and performing position adjustment of the supporting wafer S, and supporting the crystal Reverse the front and back of the circle S. Further, the relay devices 50 and 51 and the position adjusting device 52 may be integrated.

Further, the transfer device 50, 51 is provided with a coating device 60 for applying the adhesive G to the wafer W to be processed, and heat treatment devices 61 to 66 for applying the adhesive to the positive direction side in the Y direction. The processed wafer W of G is heated to a predetermined temperature. The coating device 60 is disposed on the negative side in the X direction of the relay devices 50 and 51, and the heat treatment devices 61 to 66 are disposed on the positive side in the X direction of the relay devices 50 and 51. As shown in Fig. 2, the heat treatment apparatuses 61 to 66 are arranged in two rows in the positive direction of the Y direction. Further, the heat treatment apparatuses 61 to 63 and the heat treatment apparatuses 64 to 66 are provided in three layers in this order from the bottom. Further, the number of devices of the coating device 60 can be arbitrarily set, and a plurality of coating devices can be provided in the bonding system 1. Further, the number of devices of the heat treatment devices 61 to 66, or the arrangement in the vertical direction and the horizontal direction may be arbitrarily set.

A second wafer transfer region 67 is formed in a region between the coating device 60 and the heat treatment devices 61 to 66 (in the X direction) and in a region on the positive side in the Y direction of the relay devices 50 and 51. For example, the second wafer transfer device 68 is disposed in the wafer transfer region 90.

The second wafer transfer device 68 has a transfer arm that is freely movable in, for example, a vertical direction, a horizontal direction (Y direction, and an X direction) and a vertical axis. The second wafer transfer device 68 is movable in the second wafer transfer region 67, and transports the processed wafer W and the support wafer S to the surrounding transfer devices 50 and 51, the coating device 60, and the heat treatment device 61. ~66.

Next, the configuration of the above-described joining devices 40, 41 will be described. The joining device 40 may have a casing (not shown), and accommodates a constituent member of the joining device 40 to be described later, but is not illustrated here. Joint When the device 40 has a casing, the processing wafer W, the supporting wafer S, and the stacked wafer T are transported to the transport port on the side of the first wafer transport region 42 side of the housing. There is an open and close shutter at the transport port.

As shown in FIG. 4, the bonding apparatus 40 has a first holding unit 100 that holds and holds the wafer W to be processed by the top surface, and a second holding unit 101 that adsorbs and holds the supporting wafer S by the bottom surface. The first holding portion 100 is provided below the second holding portion 101 and is disposed to face the second holding portion 101 . In other words, the wafer W to be processed held in the first holding portion 100 is disposed to face the support wafer S held by the second holding portion 101.

The first holding portion 100 uses, for example, an electrostatic chuck to electrostatically adsorb the wafer W to be processed. The first holding portion 100 uses a ceramic material such as an aluminum nitride ceramic material having thermal conductivity. Further, for example, a DC high voltage power supply 110 is connected to the first holding unit 100. Further, an electrostatic force is generated on the front surface of the first holding portion 100, and the wafer W to be processed is electrostatically adsorbed onto the first holding portion 100. Further, the material of the first holding portion 100 is not limited to the embodiment, and other ceramic materials such as a tantalum carbide ceramic material or an alumina ceramic material may be used, and for example, when the insulating layer is formed on the front surface of the first holding portion 100, Metal materials such as aluminum or stainless steel may be used in addition to the ceramic material.

Inside the first holding portion 100, a first heating mechanism 111 is provided to heat the processed wafer W. The first heating mechanism 111 uses, for example, a heater. The heating temperature of the wafer W to be processed by the first heating means 111 is controlled by, for example, a control unit 350 which will be described later.

Further, the first cooling mechanism 112 is provided on the bottom surface side of the first holding portion 100. The first cooling mechanism 112 uses, for example, a cooling jacket made of copper. That is, the first cooling mechanism 112 causes the cooling medium to flow, for example, a cooling gas, and the processed wafer W is cooled by the cooling medium. The first cooling temperature of the wafer W to be processed by the first cooling mechanism 112 is controlled by, for example, a control unit 350 which will be described later. Further, the first cooling mechanism 112 is not limited to the embodiment, and various configurations can be selected as long as the wafer W to be processed can be cooled. For example, a cooling member such as a Peltier element may be built in the first cooling mechanism 112.

Further, a heat insulating plate 113 is provided on the bottom surface side of the first cooling mechanism 112. Insulation board 113 prevents borrowing The heat when the wafer W to be processed is heated by the first heating means 111 is transmitted to the lower chamber 181 side to be described later. Another insulating plate 113 uses, for example, tantalum nitride.

Below the first holding portion 100, there are provided, for example, three lift pins 120 for supporting the processed wafer W or the stacked wafer T from below to be raised and lowered. The lift pin 120 can be moved up and down by the lift drive unit 121. The elevation drive unit 121 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. Further, the through hole 122 is formed in the vicinity of the center portion of the first holding portion 100, for example, three places, and the first holding portion 100 and the lower chamber 181 are penetrated in the thickness direction. Further, the lift pin 120 is inserted through the through hole 122 so as to be able to protrude from the top surface of the first holding portion 100. Further, the elevation drive unit 121 is provided at a lower portion of the lower chamber 181 to be described later. Further, the elevation drive unit 121 is provided on the support member 130.

The second holding portion 101 supports the wafer S by electrostatic adsorption using, for example, an electrostatic chuck. The second holding portion 101 is made of a ceramic material such as an aluminum nitride ceramic material having thermal conductivity. Further, for example, a DC high voltage power supply 140 is connected to the second holding portion 101. Further, an electrostatic force is generated on the front surface of the second holding portion 101, and the supporting wafer S is electrostatically attracted to the second holding portion 101. Further, the material of the second holding portion 101 is not limited to the embodiment, and other ceramic materials such as a tantalum carbide ceramic material or an alumina ceramic material may be used, for example, when the insulating layer is formed on the front surface of the second holding portion 101. Metal materials such as aluminum or stainless steel may also be used in addition to the ceramic material.

Inside the second holding portion 101, a second heating mechanism 141 is provided to heat the supporting wafer S. The second heating mechanism 141 uses, for example, a heater. The second heating mechanism 141 uses, for example, a heater. The heating temperature of the wafer W to be processed by the second heating means 141 is controlled by, for example, a control unit 350 which will be described later.

Further, a second cooling mechanism 142 is provided on the top surface side of the second holding portion 101. The second cooling mechanism 142 uses, for example, a cooling jacket made of copper. That is, the second cooling mechanism 142 distributes the cooling medium, for example, a cooling gas, and cools the support wafer S by the cooling medium. The second cooling temperature of the wafer W to be processed by the second cooling mechanism 142 is controlled by, for example, a control unit 350 which will be described later. Further, the second cooling mechanism 142 is not limited to the embodiment, and as long as the second cooling mechanism 142 can be cooled, Choose a variety of components. For example, a cooling member such as a Peltier element may be built in the second cooling mechanism 142.

Further, the second holding portion 101 may have a heat insulating plate (not shown) provided on the top surface side of the second cooling mechanism 142. The heat insulating plate prevents heat transferred to the support wafer S by the second heating means 141 from being transferred to the side of the support plate 150 to be described later.

The top surface side of the second holding portion 101 is provided with a pressurizing mechanism 160, and the second holding portion 101 is pressed vertically downward by the support plate 150. The pressurizing mechanism 160 has a pressure vessel 161 disposed to cover the processed wafer W and the support wafer S, a fluid supply pipe 162 to supply fluid to the inside of the pressure vessel 161, such as compressed air, and a fluid supply source 163, The fluid is internally stored, and the fluid is supplied to the fluid supply pipe 162.

Further, the members on the top surface side of the second holding portion 101 are supported by a pneumatic cylinder (not shown) provided above the support plate 150. Further, the correction of parallelism of the upper chamber 182 or the adjustment of the gap between the second holding portion 101 and the first holding portion 100 is performed by an adjusting bolt (not shown) provided above the support plate 150.

The pressure vessel 161 is constructed by, for example, a bellows made of stainless steel that is freely expandable and contractible in, for example, a vertical direction. The pressure vessel 161 has its bottom surface fixed to the top surface of the support plate 150, and the top surface is fixed to the bottom surface of the support plate 164 provided above the second holding portion 101. The fluid supply pipe 162 has one end connected to the pressure vessel 161 and the other end connected to the fluid supply source 163. Further, the pressure vessel 161 is elongated by supplying fluid from the fluid supply pipe 162 to the pressure vessel 161. At this time, since the top surface of the pressure vessel 161 abuts against the bottom surface of the support plate 164, the pressure vessel 161 is extended only in the downward direction, and the second holding portion 101 provided on the bottom surface of the pressure vessel 161 can be pushed downward. . Further, since the pressure vessel 161 has stretchability, even if the parallelism of the second holding portion 101 is different from the parallelism of the first holding portion 100, the pressure vessel 161 can absorb the difference. Further, at this time, the inside of the pressure vessel 161 is pressurized by the fluid, and can be uniformly pressed. Furthermore, since the planar shape of the pressure vessel 161 is the same as the planar shape of the wafer W to be processed and the support wafer S, the diameter of the pressure vessel 161 is the same as the diameter of the wafer W to be processed, for example, 300 mm, so that no excess is generated. Edge stress. Therefore, regardless of the first holding portion 100 and the second With the parallelism of the holding portion 101, the pressure vessel 161 can uniformly press the second holding portion 101 (the processed wafer W and the supporting wafer S) in the plane. The adjustment of the pressure at the time of pressing the second holding portion 101 is performed by adjusting the pressure of the compressed air supplied to the pressure vessel 161. Further, the support plate 164 is preferably constituted by a member having a strength that is not deformed even by a reaction force applied to the load of the second holding portion 101 by the pressurizing mechanism 160.

Between the first holding portion 100 and the second holding portion 101, a first imaging unit 170 is provided to capture the front surface of the wafer W to be processed held by the first holding unit 100, and a second imaging unit 171 is image-held. 2 The holding portion 101 supports the front side of the wafer S. For example, a wide-angle CCD camera is used for each of the first imaging unit 170 and the second imaging unit 171. Further, the first imaging unit 170 and the second imaging unit 171 are configured to be movable in the vertical direction and the horizontal direction by a moving mechanism (not shown).

The engagement device 40 has a processing container 180 that can enclose the interior. The processing container 180 accommodates the first holding unit 100, the second holding unit 101, the support plate 150, the pressure vessel 161, the support plate 164, the first imaging unit 170, and the second imaging unit 171.

The processing container 180 has a lower chamber 181 that supports the first holding portion 100 and an upper chamber 182 that supports the second holding portion 101. The upper chamber 182 is configured to be vertically movable by a lifting mechanism (not shown) such as a pneumatic cylinder. A sealing member 183 is provided on the joint surface of the lower chamber 181 and the upper chamber 182 for holding the airtightness inside the processing container 180. The seal 183 uses, for example, an O-ring. Further, as shown in FIG. 5, the lower chamber 181 is in contact with the upper chamber 182, whereby the inside of the processing container 180 is formed as a closed space.

A plurality of moving mechanisms 190 are provided around the upper chamber 182, for example, five. As shown in Fig. 6, the second holding portion 101 is moved in the horizontal direction by the upper chamber 182. Among the five moving mechanisms 190, four moving mechanisms 190 are used to move the second holding portion 101 in the horizontal direction, and one moving mechanism 190 is used to rotate the second holding portion 101 about the vertical axis (θ direction). As shown in FIG. 4, the moving mechanism 190 includes a cam 191 that abuts against the upper chamber 182 to move the second holding portion 101, and a rotation driving portion 193 that rotates the cam 191 by the shaft 192, for example, Placed on a motor (not shown). The cam 191 is set to be eccentric with respect to the central axis of the shaft 192. Then, the cam 191 is rotated by the rotation driving unit 193, whereby the center position of the cam 191 with respect to the second holding unit 101 is moved, and the second holding unit 101 can be moved in the horizontal direction.

The lower chamber 181 is provided with a pressure reducing mechanism 200 for decompressing the environment in the processing container 180. The pressure reducing mechanism 200 has an intake pipe 201 for sucking the ambient gas in the processing container 180, and a negative pressure generating device 202 connected to the intake pipe 201, for example, a vacuum pump or the like.

The configuration of the joining device 41 is the same as that of the above-described joining device 40, and thus the description thereof will be omitted.

Next, the configuration of the above position adjusting device 52 will be described. As shown in Fig. 7, the position adjusting device 52 has a processing container 210 that can block the inside. The side surface of the processing container 210 on the side of the relay device 50, 51 is formed with a processed wafer W and a transport wafer S (portable) (not shown), and the transport port is provided with an opening and closing gate (not shown). .

As shown in FIGS. 7 to 9 , the inside of the processing container 210 is provided with a holding arm 220 for holding the supporting wafer S and the processed wafer W. The holding arm 220 extends in the horizontal direction (the X direction in FIGS. 7 and 8). Further, the holding arm 220 is provided with a holding member 221, for example, four places for holding the supporting wafer S and the processed wafer W. As shown in FIG. 10, the holding member 221 is configured to be movable in the horizontal direction with respect to the holding arm 220. Further, a notch 222 for holding the support wafer S and the outer peripheral portion of the wafer W to be processed is formed on the side surface of the holding member 221. Moreover, the holding members 221 can hold and hold the support wafer S and the processed wafer W.

The holding arm 220 is supported by the first driving unit 223 as shown in FIGS. 7 to 9 , and the first driving unit 223 has, for example, an electric motor or the like. By the first driving unit 223, the holding arm 220 is freely rotatable about the horizontal axis, and is movable in the horizontal direction (the X direction in FIGS. 7 and 8 and the Y direction in FIGS. 7 and 9). Further, the first driving unit 223 can also rotate the holding arm 220 about the vertical axis to move the holding arm 220 in the horizontal direction. A second drive is provided below the first drive unit 223 In the portion 224, the second driving portion 224 has, for example, an electric motor or the like. Thereby, the second drive unit 224 moves the first drive unit 223 in the vertical direction along the support post 225 that extends in the vertical direction. In this manner, the first driving unit 223 and the second driving unit 224 hold the supporting wafer S held by the holding member 221 and the processed wafer W so as to be rotatable about the horizontal axis and can move in the vertical direction and the horizontal direction.

Further, the holding arm 220 of the present embodiment transports the support wafer S and the processed wafer W between the relay devices 50 and 51, and can transport the relay devices 50 and 51 and the position adjusting device using a separately provided transport arm. Support wafer S between 52, processed wafer W.

The support post 225 is supported by the support plate 231: the position adjustment mechanism 230 adjusts the orientation of the support wafer S held by the holding member 221 and the processed wafer W in the horizontal direction. The position adjustment mechanism 230 is disposed adjacent to the holding arm 220.

The position adjustment mechanism 230 has a base 232 and a detection unit 233 for detecting the position of the support wafer S and the notch portion of the wafer W to be processed. Further, the position adjustment mechanism 230 moves the support wafer S and the processed wafer W held by the holding member 221 in the horizontal direction, and the detection portion 233 detects the gap between the support wafer S and the processed wafer W. The position of the portion is adjusted to adjust the position of the notch portion, thereby adjusting the orientation of the support wafer S and the processed wafer W in the horizontal direction.

Next, the configuration of the above coating apparatus 60 will be described. As shown in FIG. 11, the coating device 60 has a processing container 240 that can close the inside. An operation port (not shown) of the wafer W to be processed is formed on the side surface of the processing container 240 on the side of the second wafer transfer region 67, and an opening and closing gate (not shown) is provided in the transport port.

The center portion of the processing container 240 is provided with a rotating chuck 250 that holds and rotates the wafer W to be processed. The rotary chuck 250 has a horizontal top surface provided with, for example, a suction port (not shown) for sucking the processed wafer W. The wafer W to be processed is adsorbed and held on the spin chuck 250 by suction from the suction port.

Below the rotary chuck 250, there is provided a chuck driving portion 251 having, for example, an electric motor or the like. The spin chuck 250 is rotatable at a predetermined speed by the chuck driving portion 251. Further, the chuck driving unit 251 is provided with a lifting drive source such as a cylinder, and the rotary chuck 250 is freely movable up and down.

Around the rotary chuck 250, a cup body 252 is provided to receive and recover the liquid scattered or dropped from the wafer W to be processed. The bottom surface of the cup 252 is connected to a discharge pipe 253 for discharging the recovered liquid, and an exhaust pipe 254 for venting the environment inside the vacuum suction cup 252.

As shown in FIG. 12, a rail 260 that extends in the Y direction (the horizontal direction in FIG. 12) in the negative direction (the downward direction in FIG. 12) of the cup body 252 is formed. The rail 260 is formed, for example, from the outside in the negative direction (the left direction in FIG. 12) of the cup body 252 in the Y direction to the outside in the positive direction (the right direction in FIG. 12) of the Y direction. The rail 260 is mounted with an arm body 261.

As shown in FIGS. 11 and 12, the arm body 261 supports an adhesive nozzle 262 for supplying a liquid adhesive G to the wafer W to be processed. The arm body 261 is freely movable on the rail 260 by the nozzle driving portion 263 shown in FIG. Thereby, the adhesive nozzle 262 can be moved from the standby portion 264 provided outside the positive direction of the cup body 252 in the Y direction, until the center portion of the wafer W to be processed in the cup 252 is over, and further The wafer W to be processed can be moved in the radial direction of the wafer W to be processed. Further, the arm body 261 can be freely moved up and down by the nozzle driving portion 263, and the height of the adhesive nozzle 262 can be adjusted.

As shown in FIG. 11, the adhesive nozzle 262 is connected to a supply pipe 265 to supply the adhesive G to the adhesive nozzle 262. The supply pipe 265 is connected to the adhesive supply source 266, and the adhesive G is stored therein. Further, the supply pipe 265 is provided with a supply device group 267 including a valve for controlling the flow of the adhesive G, a flow rate adjusting portion, and the like.

Further, a lower cleaning nozzle (not shown) may be disposed below the rotary chuck 250 to eject the cleaning liquid toward the back surface of the wafer W to be processed, that is, toward the non-joining surface W _N . The non-joining surface W _{N of the} wafer W to be processed and the outer peripheral portion of the wafer W to be processed are cleaned by the cleaning liquid sprayed from the post-cleaning nozzle.

Next, the configuration of the above heat treatment devices 61 to 66 will be described. As shown in Fig. 13, the heat treatment apparatus 61 has a processing container 270 that can block the inside. An operation port (not shown) of the wafer W to be processed is formed on a side surface of the processing container 270 on the side of the second wafer transfer region 67, and an opening and closing gate (not shown) is provided in the transport port.

The top surface of the processing container 270 is formed with a gas supply port 271, and an inert gas such as nitrogen gas is supplied to the inside of the processing container 270. The gas supply port 271 is connected to a gas supply pipe 273 and communicates with the gas supply source 272. The gas supply pipe 273 is provided with a supply device group 274 including a valve for controlling the flow of the blunt gas, a flow rate adjusting portion, and the like.

The bottom surface of the processing container 270 is formed with an air inlet 275 that sucks the environment inside the processing container 270. The intake port 275 is connected to an intake pipe 277 that communicates with a negative pressure generating device 276 such as a vacuum pump.

Inside the processing container 270, a heating unit 280 is provided to heat the processed wafer W, and a temperature adjusting unit 281 adjusts the temperature of the processed wafer W. The heating unit 280 and the temperature adjustment unit 281 are arranged in the Y direction.

The heating unit 280 includes an annular holding member 291 that houses the hot plate 290 and holds the outer peripheral portion of the hot plate 290, and a substantially cylindrical support ring 292 that surrounds the outer periphery of the holding member 291. The hot plate 290 has a substantially disk shape having a thickness, and the wafer W to be processed can be placed and heated. Further, the hot plate 290 incorporates, for example, a heating mechanism 293. The heating mechanism 293 uses, for example, a heater. The heating temperature of the hot plate 290 is controlled by, for example, a control unit 350, which will be described later, to heat the wafer W to be processed placed on the hot plate 290 to a predetermined temperature.

Below the hot plate 290, there are three lift pins 300, for example, three, and the wafer W to be processed is supported and lifted from below. The lift pin 300 can be moved up and down by the lift drive unit 301. The through hole 302 is formed in the vicinity of the center portion of the hot plate 290, for example, at three places, and penetrates the hot plate 290 in the thickness direction. Further, the lift pin 300 is inserted through the through hole 302 so as to be able to protrude from the top surface of the hot plate 290.

The temperature adjustment unit 281 has a temperature adjustment plate 310. As shown in FIG. 14, the temperature adjustment plate 310 has a substantially square flat plate shape, and the end surface on the hot plate 290 side is curved in an arc shape. The temperature adjustment plate 310 is formed with two slits 311 along the Y direction. The slit 311 is formed from the end surface of the temperature regulating plate 310 on the hot plate 290 side until the vicinity of the central portion of the temperature adjustment plate 310. By the slit 311, the temperature adjustment plate 310 and the lift pin 300 of the heating unit 280 and the lift pin 320 of the temperature adjustment unit 281 which will be described later can be prevented from drying. Further, the temperature adjustment plate 310 incorporates a temperature adjustment member (not shown) such as a Peltier element. The cooling temperature of the temperature adjustment plate 310 is controlled by, for example, a control unit 350 to be described later, and the processed wafer W placed on the temperature adjustment plate 310 is cooled to a predetermined temperature.

The temperature adjustment plate 310 is supported by the support arm 312 as shown in FIG. The support arm 312 is mounted with a driving portion 313. The drive unit 313 is attached to a rail 314 that extends in the Y direction. The rail 314 extends from the temperature adjustment portion 281 to the heating portion 280. With the drive unit 313, the temperature adjustment plate 310 can move between the heating unit 280 and the temperature adjustment unit 281 along the rail 314.

Below the temperature adjustment plate 310, there are provided, for example, three lift pins 320 for supporting and lifting the wafer W to be processed from below. The lift pin 320 can be moved up and down by the lift drive unit 321 . Further, the lift pin 320 is inserted through the slit 311 so as to be able to protrude from the top surface of the temperature adjustment plate 310.

The configuration of the heat treatment apparatuses 62 to 66 is the same as that of the above-described heat treatment apparatus 61, and thus the description thereof will be omitted.

Moreover, the temperature adjustment device 30 has almost the same configuration as the above-described heat treatment device 61, and a temperature adjustment plate is used instead of the hot plate 290. A cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature. Further, in the temperature adjustment device 30, the temperature adjustment unit 281 of the heat treatment device 61 is omitted.

As shown in FIG. 1, the above-described joining system 1 is provided with a control unit 350. The control unit 350 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores control programs and controls the joint system. The processing of the processed wafer W, the supporting wafer S, and the stacked wafer T in 1. Further, the program storage unit also stores a joining processing program for controlling the operation of the drive system such as the various processing devices or the transport device described above, and realizes a joining process to be described later in the joining system 1. In addition, the program can be recorded on a computer-readable hard disk (HD), floppy disk (FD), compact disc (CD), magneto-optical disc (MO), memory card, etc. It may be attached from the memory medium H to the control unit 350.

Next, a bonding processing method of the processed wafer W and the supporting wafer S by the bonding system 1 having the above configuration will be described. Fig. 15 is a flow chart showing an example of the main steps of such a joining process.

First, the cassette C _W accommodating a plurality of processed wafers W, the cassette C S accommodating a plurality of support wafers _S , and the empty cassette C _{T are} placed in a predetermined cassette carried in the transport station 2 Plate 11 is placed. Thereafter, the wafer _W to be processed in the cassette C _W is taken out by the wafer transfer device 22 and transported to the relay device 31 of the processing station 3. At this time, the wafer W to be processed is transported while the non-joining surface W _N faces downward.

Next, the processed wafer W is transported to the relay device 50 by the first wafer transfer device 43, and then transported to the coating device 60 by the second wafer transfer device 68. The processed wafer W carried into the coating device 60 is transferred from the second wafer transfer device 68 to the rotary chuck 250 and is adsorbed and held. At this time, the non-joining surface W _{N of the} wafer W to be processed is adsorbed and held.

After the bonding, the adhesive nozzle 262 of the standby portion 264 is moved by the arm body 261 until it is above the center portion of the wafer W to be processed. Thereafter, the wafer W to be processed is rotated by the rotary chuck 250, and the adhesive G is supplied from the adhesive nozzle 262 to the joint surface W _{J of the} wafer W to be processed. The supplied adhesive G is diffused to the entire surface of the joint surface W _J of the wafer W to be processed by centrifugal force, and the adhesive G is applied to the joint surface W _{J of the} wafer W to be processed (step of FIG. 15). A1).

Next, the wafer W to be processed is transported to the heat treatment apparatus 61 by the second wafer transfer device 68. At this time, the inside of the heat treatment apparatus 61 is maintained in an atmosphere of blunt gas. When the processed wafer W is transported to the heat treatment apparatus 61, the processed wafer W is transferred from the second wafer transfer apparatus 68 in advance. The lift pin 320 that rises and stands by. The bonding lifts the lift pins 320 and places the processed wafer W on the temperature adjustment plate 310.

Thereafter, the temperature adjustment plate 310 is moved along the rail 314 by the driving unit 313 until the upper portion of the hot plate 290, and the processed wafer W is transferred to the lift pins 300 that are raised in advance and are in standby. Thereafter, the lift pins 300 are lowered and the processed wafer W is placed on the hot plate 290. Then, the wafer W to be processed on the hot plate 290 is heated to a predetermined temperature, for example, 100 ° C to 300 ° C (step A2 of FIG. 15). By the heating by the hot plate 290, the adhesive G on the wafer W to be processed is heated to harden the adhesive G.

Thereafter, the lift pins 300 are raised, and the temperature adjustment plate 310 is moved above the hot plate 290. The wafer W to be processed is transferred from the lift pin 300 to the temperature adjustment plate 310, and the temperature adjustment plate 310 is moved to the second wafer transfer region 67 side. During the movement of the temperature adjustment plate 310, the temperature of the wafer W to be processed is adjusted to a predetermined temperature, for example, 23 ° C at a normal temperature.

Next, the processed wafer W is transported to the relay device 50 by the second wafer transfer device 68.

The processed wafer W accommodated in the relay device 50 is transported to the position adjusting device 52 by the holding arm 220 of the position adjusting device 52. After the bonding, the processed wafer W is moved to the position adjusting mechanism 230 while being held by the holding arm 220. Further, in the position adjustment mechanism 230, the position of the notch portion of the wafer W to be processed is adjusted, and the orientation of the wafer W to be processed in the horizontal direction is adjusted (step A3 of FIG. 15).

Next, the wafer W to be processed is transported to the relay device 51 by the holding arm 220, and then transported to the joining device 40 by the first wafer transfer device 43. At this time, in the joining device 40, the upper chamber 182 is located above the lower chamber 181, the upper chamber 182 and the lower chamber 181 are not in contact with each other, and the inside of the processing container 180 is not formed as a closed space. Then, the wafer W to be processed transported to the bonding apparatus 40 is placed on the first holding unit 100 (step A4 in FIG. 15). In the first holding portion 100, the processed wafer W is adsorbed and held in a state in which the bonding surface W _{J of} the wafer W to be processed is directed upward, that is, the adhesive G is directed upward.

While the processed wafer W is subjected to the processing of the above steps A1 to A4, the processed wafer W is adhered and the processing for supporting the wafer S is performed. The support wafer S is transported to the relay device 50 by the first wafer transfer device 43, and then transported to the position adjusting device 52 by the holding arm 220. The steps of transporting the support wafer S to the position adjusting device 52 are the same as those of the above embodiment, and thus the description thereof is omitted.

The support wafer S transported to the position adjusting device 52 is moved to the position adjusting mechanism 230 while being held by the holding arm 220. Further, in the position adjustment mechanism 230, the position of the notch portion of the support wafer S is adjusted, and the orientation of the support wafer S in the horizontal direction is adjusted (step A5 of FIG. 15). The support wafer S whose orientation in the horizontal direction has been adjusted is moved from the position adjustment mechanism 230 in the horizontal direction, and after moving in the vertical direction, the front and back surfaces are reversed (step A6 of FIG. 15). That is, the bonding surface S _{J of} the supporting wafer S faces downward.

Next, the wafer W to be processed is transported to the relay device 51 by the holding arm 220, and then transported to the joining device 40 by the first wafer transfer device 43. The support wafer S that has been transported to the bonding apparatus 40 is adsorbed and held by the second holding portion 101 (step A7 of FIG. 15). In the second holding portion 101, the support wafer S is held in a state in which the bonding surface S _{J of} the supporting wafer S faces downward.

In the bonding apparatus 40, first, the position adjustment of the wafer W to be held by the first holding unit 100 and the support wafer S held by the second holding unit 101 in the horizontal direction is performed. A front surface of the wafer W to be processed and a front surface of the support wafer S are formed with a predetermined plurality of reference points, for example, four or more points. Then, the first imaging unit 170 is moved in the horizontal direction to capture the front surface of the wafer W to be processed. Further, the second imaging unit 171 is moved in the horizontal direction to capture the front surface of the support wafer S. Thereafter, the position of the support wafer S in the horizontal direction (including the horizontal direction) is adjusted by the moving mechanism 190 so that the position of the reference point of the processed wafer W displayed in the image captured by the first imaging unit 170 is set. The position of the reference point of the support wafer S displayed on the image captured by the second imaging unit 171 is matched. That is, the cam 191 is rotated by the rotation driving unit 193, and the second holding unit 101 is moved in the horizontal direction by the upper chamber 182 to adjust the position of the support wafer S in the horizontal direction. The position of the wafer W and the supporting wafer S in the horizontal direction is thus processed. (Step A8 of Fig. 15).

Thereafter, after the first imaging unit 170 and the second imaging unit 171 are separated from between the first holding unit 100 and the second holding unit 101, the upper chamber 182 is lowered by a moving mechanism (not shown). Further, as shown in FIG. 5, the upper chamber 182 is brought into contact with the lower chamber 181, and the inside of the processing container 180 constituted by the upper chamber 182 and the lower chamber 181 is formed as a closed space. At this time, a slight gap is formed between the wafer W to be processed held by the first holding portion 100 and the supporting wafer S held by the second holding portion 101. That is, the processed wafer W and the supporting wafer S are not in contact with each other.

Thereafter, the environment in the processing container 180 is sucked by the pressure reducing mechanism 200, and the inside of the processing container 180 is decompressed to a vacuum state (step A9 in Fig. 15). In the present embodiment, the pressure inside the processing container 180 is reduced to a predetermined vacuum pressure or lower, for example, to 10.0 Pa or less.

Thereafter, compressed air is supplied to the pressure vessel 161 as shown in Fig. 16, and the inside of the pressure vessel 161 is set to a predetermined pressure, for example, 1.00001 MPa. Here, the inside of the processing container 180 is maintained in a vacuum state, and the pressure container 161 is disposed in the vacuum environment of the processing container 180. Therefore, the pressure which is pressed downward by the pressurizing mechanism 160, that is, the pressure transmitted from the pressure vessel 161 to the second holding portion 101 becomes a pressure difference of 1.0 MPa between the pressure in the pressure vessel 161 and the pressure in the processing container 180. That is, the pressure at which the second holding portion 101 is pressed by the pressurizing mechanism 160 is smaller than a predetermined vacuum pressure. Then, the second holding portion 101 is pressed downward by the pressurizing mechanism 160, and the entire surface of the processed wafer W is brought into contact with the entire surface of the supporting wafer S. When the processed wafer W and the supporting wafer S are in contact with each other, since the processed wafer W and the supporting wafer S are respectively adsorbed and held by the first holding portion 100 and the second holding portion 101, the processed wafer is not generated. The positional offset between W and the supporting wafer S. Further, since the planar shape of the pressure vessel 161 is the same as the planar shape of the wafer W to be processed and the support wafer S, the pressurizing mechanism 160 presses the wafer W to be processed and the support wafer S by the entire surface. Further, at this time, the processed wafer W and the supporting wafer S are heated by the heating means 111, 141 at a predetermined temperature, for example, 100 ° C to 400 ° C. In this manner, the processed wafer W and the supporting wafer S are heated by a predetermined temperature, and the second holding portion 101 is pressed by the pressing mechanism 160 with a predetermined pressure, thereby making the processed wafer W and the supporting wafer S more Strongly bonded, Engagement (step A10 of Fig. 27). In addition, in step A10, since the processing container 180 is maintained in a vacuum state, even if the processed wafer W is brought into contact with the supporting wafer S, the between the processed wafer W and the supporting wafer S can be suppressed. The production of vacuoles. Further, in the present embodiment, the second holding portion 101 is pressed by the pressurizing mechanism 160 at 1.0 MPa. However, the pressure at the time of pressing may depend on the type of the adhesive G or the type of the device on the wafer W to be processed. Wait to set.

The superposed wafer T to which the wafer W to be processed and the support wafer S are bonded is transported to the temperature adjustment device 30 by the first wafer transfer device 43. Further, in the temperature adjustment device 30, the temperature of the laminated wafer T is adjusted to a predetermined temperature, for example, 23 ° C at a normal temperature (step A11 of FIG. 27). By performing temperature adjustment in this manner, warpage of the laminated wafer T can be suppressed. Thereafter, the laminated wafer T is transported to the cassette C _{T of the} predetermined cassette mounting plate 11 by the wafer transfer device 22 transported to the carry-out station 2. In this way, the joining process of the series of processed wafers W and the supporting wafers S is completed.

According to the above embodiment, one position adjusting device 52 is provided for the plurality of joining devices 40, 41 in the joining system 1, that is, the position adjusting device 52 is common to the plurality of joining devices 40, 41. Therefore, in the case where the engagement device and the position adjustment device are provided in the conventional mode 1 to 1, it is possible to reduce the extent to which the occupation area of the engagement system 1 is reduced by the number of the position adjustment devices 52. Moreover, the manufacturing cost of the joining system 1 can be reduced accordingly.

Further, in the bonding apparatus 40, 41, in the step A10, immediately before the wafer W to be processed and the supporting wafer are bonded, the first imaging unit 170 and the second imaging unit 171 are adjusted to be processed with high precision in step A8. The position of the wafer W and the horizontal direction of the support wafer S. Therefore, in the position adjusting device 52, such high-precision position adjustment is not required. From this point of view, it is not necessary to provide the jointing device and the position adjusting device as in the conventional method 1 to 1, and the position adjusting device 52 can be made common to the plurality of joining devices 40 and 41.

Further, since the joining system 1 has the coating device 60, the heat treatment devices 61 to 66, the position adjusting device 52, the joining devices 40, 41, and the temperature adjusting device 30, steps A1 to A11 can be performed in the one joining system 1. A series of bonding processes of the processed wafer W and the supporting wafer S are appropriately performed.

Further, in one bonding system 1, a plurality of bonding processes of steps A1 to A11 can be performed in parallel with a plurality of supporting wafers S for a plurality of processed wafers W. In particular, since the bonding system 1 is provided with a plurality of bonding devices 40 and 41, the bonding of the steps A8 to A10 can be performed in parallel with the plurality of supporting wafers S for a plurality of processed wafers W. Therefore, the processing amount of the bonding process between the processed wafer W and the supporting wafer S can be improved.

In the above embodiment, the bonding system 1 is provided with the temperature adjusting device 30 for adjusting the temperature of the laminated wafer T. The temperature adjustment of the laminated wafer T can also be performed in the heat processing devices 61 to 66. In this case, the temperature adjustment device 30 can be omitted.

In the bonding system 1 of the above embodiment, the processed wafer W may be transported to the position adjusting device 52 to adjust the processed wafer W before the adhesive G is applied to the processed wafer W in step A1. The orientation of the horizontal direction. The position adjustment of the wafer W to be processed in the position adjusting device 52 is the same as that of the above-described step A3, and thus the description thereof is omitted.

In this case, since the step A1 is performed in a state where the wafer W to be processed is appropriately adjusted in position, the surface of the adhesive G can be uniformly applied to the wafer W to be processed, and the subsequent processing is performed. In step A2, heat treatment can be uniformly performed in the plane of the wafer W to be processed. Therefore, a series of joining processes in the joining system 1 can be performed more appropriately.

In the bonding system 1 of the above embodiment, the outer peripheral cleaning device may be provided, and the excess adhesive G overflowing from the outer peripheral portion of the processed wafer W may be removed from the processed wafer W subjected to the heat treatment in step A2. , cleaning the outer perimeter. Further, the peripheral cleaning device is provided, for example, in the lower stage of the heat treatment devices 61 to 66.

As shown in FIGS. 17 and 18, the outer peripheral portion cleaning device 400 has a processing container 410 that can close the inside. On the side surface of the processing container 410 on the second wafer transporting region 67 side, a transport port (not shown) of the wafer W to be processed is formed, and an opening and closing gate (not shown) is provided in the transport port.

The central portion of the processing container 410 is provided with a rotating chuck 420 for holding and rotating the wafer W to be processed. The spin chuck 420 has a horizontal top surface, for example, a suction port (not shown) that sucks the wafer W to be processed. The wafer W to be processed can be adsorbed and held on the spin chuck 420 by suction from the suction port.

Below the rotary chuck 420, there is provided a chuck driving portion 421, for example, an electric motor or the like. The spin chuck 420 can be rotated at a predetermined speed by the chuck driving portion 421. Further, the chuck driving unit 421 is provided with a lifting drive source such as a cylinder, and the rotary chuck 420 is freely movable up and down. Further, the chuck driving portion 421 is attached to a rail 422 that extends in the Y direction. The spin chuck 420 is freely movable along the rail 422 by the chuck driving portion 421.

The side of the rotary chuck 420 is provided with a solvent supply unit 430 for supplying a solvent of the adhesive G. The solvent supply unit 430 is fixed to the processing container 410 by a support member (not shown). As shown in FIG. 19, the solvent supply unit 430 supplies the solvent of the adhesive G to the outer adhesive G _{E that} overflows from the outer peripheral portion of the wafer W to be processed.

The solvent supply unit 430 has an upper nozzle 431 disposed above the wafer W to be processed, and a lower nozzle 432 disposed below the wafer W to be processed. The upper nozzle 431 includes a top portion 431a and a side wall portion 431b, and is provided to cover an upper portion of the outer peripheral portion of the wafer W to be processed. Further, the lower nozzle 432 includes a bottom portion 432a and a side wall portion 432b, and is a lower portion that covers the outer peripheral portion of the wafer W to be processed. Further, by the upper nozzle 431 and the lower nozzle 432, the solvent supply unit 430 has a substantially rectangular parallelepiped shape as shown in FIGS. 17 and 18 . Further, the side surface of the solvent supply unit 430 on the side of the rotary chuck 420 has an opening, and the outer peripheral portion of the wafer W to be processed held by the rotary chuck 420 is inserted into the opening.

As shown in FIG. 19, the bottom surface of the top portion 431a of the upper nozzle 431 is formed with a supply port 433, and the solvent of the adhesive G is supplied from the upper side of the wafer W to be processed to the outer adhesive G _E . Further, a top surface of the bottom portion 432a of the lower nozzle 432 is formed with a supply port 434, and a solvent of the adhesive G is supplied from the lower side of the wafer W to be processed to the outer adhesive G _E .

The upper nozzle 431 and the lower nozzle 432 are connected to a supply pipe 435, and the solvent of the adhesive G is supplied to the upper nozzle 431 and the lower nozzle 432. The supply pipe 435 is connected to a solvent supply source 436 and internally stores a solvent of the adhesive G. Further, the supply pipe 435 is provided with a supply device group 437 and a valve or a flow rate adjusting unit that controls the flow of the solvent of the adhesive G. Further, as the solvent of the binder G, for example, an organic diluent is used.

Between the side wall portion 431b of the upper nozzle 431 and the side wall portion 432b of the lower nozzle 432, a discharge pipe 440 is disposed to discharge the solvent of the adhesive G after the outer adhesive agent G _{E is} removed, and the upper nozzle 431 and the lower nozzle 432 are disposed. The ambient area of the surrounding area is exhausted. The discharge pipe 440 is connected to the ejector 441.

Further, in the outer peripheral portion cleaning device 400, a cup body (not shown) may be provided around the rotary chuck 420 and outside the solvent supply portion 430 to receive and collect the scattering or falling from the wafer W to be processed. liquid. The composition of the cup is the same as that of the cup 252 in the coating device 60. Further, in the outer peripheral portion cleaning device 400 of the present embodiment, the rotary chuck 420 is moved along the rail 422, but the solvent supply portion 430 may be horizontally moved (in the Y direction in FIGS. 17 and 18). mobile.

In this case, the processed wafer W that has been subjected to the heat treatment in the step A2 is transported to the outer peripheral cleaning device 400 by the second wafer transfer device 68. The processed wafer W transported to the outer peripheral cleaning device 400 is transferred from the second wafer transfer device 68 and adsorbed and held by the rotary chuck 420. At this time, the non-joining surface W _{N of the} wafer W to be processed is adsorbed and held. Further, the rotary chuck 420 is retracted to a position where the processed wafer W does not collide with the solvent supply unit 430. Then, after the rotary chuck 420 is lowered to a predetermined position, the rotary chuck 420 is moved in the horizontal direction toward the solvent supply portion 430, and the outer peripheral portion of the processed wafer W is inserted into the upper portion of the solvent supply portion 430. Between the nozzle 431 and the lower nozzle 432. At this time, the wafer W to be processed is located at the center between the upper nozzle 431 and the lower nozzle 432.

Thereafter, the wafer W to be processed is rotated by the rotary chuck 420, and the solvent of the adhesive G is supplied from the upper nozzle 431 and the lower nozzle 432 to the outer adhesive G _E to remove the outer adhesive G _{E .} . The outer periphery of the processed wafer W is thus cleaned. Further, the solvent of the adhesive G after removing the outer adhesive agent G _E or the environmental atmosphere in the solvent supply unit 430 is forcibly discharged from the discharge pipe 440 by the ejector 441.

In this case, since the excess outer adhesive G _E overflowing from the outer peripheral portion of the processed wafer W can be removed in the outer peripheral cleaning device 400, the processed wafer W can be appropriately processed in the bonding device 40 thereafter. Bonding to the support wafer S. Further, it is possible to suppress adhesion of the outer bonding agent G _E to the wafer transfer apparatus or the processing apparatus, and also to prevent the outer bonding agent G _{E from} adhering to the other processed wafer W or the supporting wafer S.

In the bonding system 1 of the above embodiment, an inspection apparatus may be provided for performing inspection and lamination of the inside of the laminated wafer T for the laminated wafer T which is bonded in step A10 and temperature-adjusted in step A11. Inspection of the bonding state of the wafer T. This inspection device is provided, for example, on the upper layer of the relay device 32.

As shown in FIGS. 20 and 21, the inspection device 450 has a processing container 460. An operation port (not shown) for superimposing the wafer T is formed on a side surface of the processing container 460 on the side of the first wafer transport region 42 side and a side surface on the side of the transport port 2, and the transport port is provided. Opening and closing (not shown).

The positive direction of the inside of the processing container 460 in the Y direction is provided with a lift pin 470 for transferring the superposed wafer T to the outside, and transferring the superposed wafer T to the first holding portion 480 to be described later. The lift pins 470 are provided on the support member 471, for example, at three places. Further, the lift pin 470 can be freely moved up and down by a lift drive unit 472 having, for example, a motor or the like.

Further, inside the processing container 460, a first holding portion 480 is provided to hold the back surface of the laminated wafer T. The first holding portion 480 has four support members 481 to 484 having a substantially rectangular shape in plan view. The support members 481 to 484 extend in a direction in which the adjacent support members are orthogonal to each other in plan view. That is, the support members 481, 483 extend in the Y direction, and the support members 482, 484 extend in the X direction. In addition, the support members 481 to 294 may be referred to as a first support member 481, a second support member 482, a third support member 483, and a fourth support member 484, respectively.

In the first holding portion 480 , the laminated wafer T is held such that its center is located between the first support member 481 and the second support member 482 . Further, a notch portion 485 is formed between the first support member 481 and the second support member 482 so that the laminated wafer T is exposed to the back surface 1/4. Hereinafter, sometimes exposed from the cutout portion 485 the wafer the wafer is called T T _{n (n} is an integer of 1 to 4).

Further, a holding member 486 is formed on each of the front end portions of the support members 481 to 484 to hold the back surface of the laminated wafer T. Further, for the holding member 486, for example, an O-ring made of resin may be used, and a support pin may be used. When a resin O-ring is used, the holding member 486 holds the back surface of the laminated wafer T by the frictional force between the holding member 486 and the back surface of the laminated wafer T.

The first holding portion 480 is provided with a driving portion 491 via the member 490. The drive unit 491 incorporates, for example, an electric motor (not shown). The bottom surface of the processing container 460 is provided with a rail 492 extending in the X direction. The above-described driving portion 491 is attached to the rail 492. Further, the first holding portion 480 (driving portion 491) is movable along the rail 492 between the transfer position P1, the transfer of the laminated wafer T with the lift pin 470, and the inspection position P2. The bonding state of the stacked wafer T is checked by a displacement meter 540 which will be described later.

The inside of the processing container 460 is provided with a second holding portion 500 that holds and rotates (rotates) the laminated wafer T. The second holding portion 500 is provided at the above-described inspection position P2. The second holding portion 500 has a horizontal top surface, for example, a suction port (not shown) that sucks the laminated wafer T. The superposed wafer T can be adsorbed and held on the second holding portion 500 by suction from the suction port.

The second holding portion 500 is attached to the drive unit 501 and has, for example, a motor or the like. The second holding portion 500 can be rotated (rotated) by the driving portion 501. Moreover, the drive unit 501 is provided with a lifting drive source such as a cylinder, and the second holding unit 500 is freely movable up and down. When the first holding portion 480 is located at the inspection position P2, even if the second holding portion 500 moves up and down, the second holding portion 500 does not dry out with the first holding portion 480.

The inside of the processing container 460 is provided with an infrared ray irradiation unit 510 that irradiates infrared rays to the back surface (overlap wafer T _n ) exposed from the notch portion 485 in the superposed wafer T of the first holding portion 480. The infrared ray irradiation unit 510 is disposed between the transmission position P1 and the inspection position P2 and is below the first holding portion 480 and the second holding portion 500. Further, the infrared ray irradiation unit 510 extends in the Y direction at least longer than the width of the laminated wafer T _n . The wavelength of the infrared ray irradiated from the infrared ray irradiation unit 510 is 1100 nm to 2000 nm. Infrared rays of this wavelength penetrate the laminated wafer T.

Further, the inside of the processing container 460 is provided with an imaging unit 520 that receives the infrared ray irradiated from the infrared ray irradiation unit 510, and divides and captures the superposed wafer T held by the first holding portion 480 which is exposed from the notch portion 485. That is, the imaging unit 520 captures the superposed wafer T _n . The imaging unit 520 uses, for example, an infrared camera. The imaging unit 520 is disposed closer to the negative side in the X direction than the inspection position P2, that is, the end portion of the processing container 460 in the negative direction of the X direction, and is above the first holding portion 480 and the second holding portion 500. Further, the imaging unit 520 is supported by the support member 521. The imaging unit 520 is connected to the imaging unit 520. The image of the superimposed wafer T _n imaged by the imaging unit 520 is output to the control unit 350, and the control unit 350 synthesizes the image of the entire wafer T.

Inside the processing container 460, between the infrared ray irradiation unit 510 and the imaging unit 520, direction changing units 530 and 531 are provided to change the direction of the forward path of the infrared ray. The direction changing units 530 and 531 are arranged to face each other closer to the transmission position P1 side (the positive side in the X direction) than the infrared irradiation unit 510. The first direction changing unit 530 is disposed below the first holding unit 480 and the second holding unit 500 , and the second direction changing unit 531 is disposed above the first holding unit 480 and the second holding unit 500 . Similarly to the infrared irradiation unit 510, the direction changing units 530 and 531 extend in the Y direction. The second direction changing unit 531 is supported by the support member 532 that extends in the Y direction.

As shown in FIG. 22, the first mirror 533 is provided inside the first direction changing portion 530. The first mirror 533 is inclined by 45 degrees from the horizontal direction. Further, the infrared rays from the infrared ray irradiation unit 510 are reflected by the first mirror 533 and travel vertically upward.

Similarly, a second mirror 534 is provided inside the second direction changing unit 531. The second mirror 534 is inclined by 45 degrees from the horizontal direction. Further, the infrared rays from the first direction converter 530 The second mirror 534 performs reflection in the horizontal direction.

Further, between the infrared ray irradiation unit 510 and the first direction conversion unit 530, a cylindrical lens 535 is provided to collect the infrared ray irradiated onto the superposed wafer T. Further, the top surface of the first direction changing portion 530 is provided with a diffusion plate 536 for making the cylindrical lens 535 uniform in the wafer surface of the laminated wafer T.

With such a configuration, the infrared ray irradiated from the infrared ray irradiation unit 510 penetrates the superposed wafer T via the cylindrical lens 535, the first mirror 533, and the diffusion plate 536, and is taken into the imaging unit 520 via the second mirror 534. .

As shown in FIGS. 20 and 21, the inside of the processing container 460 is provided with a displacement meter 540 that measures the displacement of the outer surface of the superposed wafer T held by the second holding portion 500. The displacement meter 540 is disposed closer to the negative side in the X direction than the inspection position P2. Further, the displacement gauge 540 is not particularly limited as long as it is used to measure the displacement of the outer surface of the superposed wafer T, and in the present embodiment, for example, a laser displacement gauge is used.

As shown in FIG. 23, the displacement meter 540 irradiates the laser beam to the outer surface of the processed wafer W and the supporting wafer S constituting the laminated wafer T, and receives the reflected light to measure the processed wafer W and the supporting crystal. The displacement of the outer side of the circle S. Then, the second holding unit 500 rotates the superposed wafer T, and irradiates the laser light from the displacement meter 540 to the outer surface of the wafer W to be processed and the support wafer S. Then, the displacement of the outer circumference of the wafer W to be processed and the support wafer S is measured, and the positional deviation between the wafer W to be processed and the support wafer S is checked.

Further, the displacement meter 540 also measures the positional deviation of the notch portion of the wafer W to be processed and the notch portion of the support wafer S. In this case, not only the positional deviation of the wafer W to be processed and the horizontal direction of the support wafer S but also the positional deviation around the vertical axis is checked.

Further, as shown in FIGS. 20 and 21, the inside of the processing container 460 is provided with a position detecting mechanism 541 for detecting the position of the stacked wafer T held by the second holding portion 500. The position detecting mechanism 541 is a third supporting member 483 and a fourth supporting member 484 along the first holding portion 480 . Location detection The measuring mechanism 541 has, for example, a CCD camera (not shown), and detects a position held by the notch portion of the superposed wafer T of the second holding portion 500. Further, the second holding portion 500 is rotated, and the position of the notch portion is detected by the position detecting mechanism 541, so that the position of the notch portion of the laminated wafer T can be adjusted.

In this case, the superposed wafer T which is joined in step A10 and whose temperature adjustment is completed in step A11 is transported to the inspection apparatus 450 by the second wafer transfer device 68. The stacked wafer T transported to the inspection device 450 is transferred from the second wafer transfer device 68 to the lift pin 470 that has risen in advance. At this time, the first holding portion 480 stands by below the lift pin 470 at the transfer position P1. Thereafter, the lift pins 470 are lowered, and the superposed wafer T is transferred from the lift pins 470 to the first holding portion 480. Further, the first holding portion 480 is thereafter moved from the transfer position P1 until the inspection position P2.

When the first holding portion 480 is moved to the inspection position P2, the second holding portion 500 is raised, and the superposed wafer T is transferred from the first holding portion 480 to the second holding portion 500.

Thereafter, the second holding portion 500 is rotated, and the laser light is irradiated from the displacement meter 540 to the outer surface of the processed wafer W of the superposed wafer T and the support wafer S. In the displacement meter 540, the processed wafer W and the outer surface of the supporting wafer S are received, and the displacement of the outer surface of the processed wafer W and the supporting wafer S is measured. Further, the superposed wafer T is rotated by at least one turn or more by the second holding portion 500. Then, the displacement of the outer surface of the wafer W to be processed and the support wafer S is measured, and the positional deviation between the wafer W to be processed and the support wafer S (the bonding state of the stacked wafer T) is checked.

Thereafter, the second holding portion 500 is further rotated, and the position detecting mechanism 541 detects the position of the notch portion. Then, the position of the notch portion of the superposed wafer T is adjusted, and the superposed wafer T is placed at a predetermined position.

After the notch portion of the superposed wafer T is adjusted, the second holding portion 500 is lowered, and the superposed wafer T is transferred from the second holding portion 500 to the first holding portion 480.

Then, in a state where the infrared ray irradiation unit 510 is irradiated with infrared rays toward the first direction conversion unit 530, the first holding unit 480 is moved from the inspection position P2 to the transmission position P1 side. When the superposed wafer T held by the first holding portion 480 passes over the first direction changing portion 530, the infrared rays from the first direction changing portion 530 are caused to penetrate the superposed wafer T exposed from the notch portion 485. This transmitted infrared ray is switched in the direction of the second direction converter 531 and is taken in the imaging unit 520. The first holding portion 480 moves until the position where the infrared ray is irradiated to the superposed wafer T ₁ exposed from the notch portion 485, that is, the side surface on the transfer position P1 side of the second supporting member 482. Further, the image pickup unit 520 captures the superposed wafer T ₁ exposed from the notch portion 485, that is, 1/4 of the superposed wafer T.

After the superimposed wafer T _{1 is} imaged by the imaging unit 520, the first holding unit 480 is moved to the inspection position P2. Then, the second holding portion 500 is raised, and the superposed wafer T is transferred from the first holding portion 480 to the second holding portion 500. Thereafter, the second holding portion 500 is rotated by 90 degrees so that the superposed wafer T _{2 is} exposed from the notch portion 485.

Thereafter, the second holding portion 500 is lowered, and the superposed wafer T is transferred from the second holding portion 500 to the first holding portion 480. Then, the superimposed wafer T ₂ is imaged by the imaging unit 520.

Thereafter, the steps are repeated, and the remaining laminated wafer T ₃ and the superposed wafer T ₄ among the superposed wafers T are photographed by the photographing portion 520. In this manner, the image of the superimposed wafers T ₁ to T ₄ divided and captured four times is output from the imaging unit 520 to the control unit 350. In the control unit 350, the wafer will be synthesized T ₁ ~ T ₄ of the image, the whole image the wafer to obtain T. Then, the inspection of the voids in the inside of the laminated wafer T is performed in accordance with the image of the entire stacked wafer T.

According to the present embodiment, since the inspection of the inside of the laminated wafer T and the inspection of the bonding state of the laminated wafer T can be performed in the inspection apparatus 450, the processing conditions in the bonding system 1 can be corrected in accordance with the inspection result. Therefore, the processed wafer W and the supporting wafer S can be joined more appropriately.

Further, in the inspection apparatus 450 of the above-described embodiment, the inspection of the inside of the laminated wafer T and the inspection of the bonding state of the laminated wafer T are performed in two types, and only one of them may be performed. an examination.

The number or arrangement of the respective processing devices in the bonding system 1 of the above embodiment is not limited to the configuration shown in FIG. 1, and can be arbitrarily set.

For example, the number of the above-described coating device 60 and the heat treatment devices 61 to 66 is not limited to the above embodiment, and as shown in Fig. 24, the coating device 600 and the heat treatment device 601 may be further added. The coating devices 60 and 600 are arranged in two rows in the Y direction. Further, the heat treatment apparatuses 61 to 66 and 601 are also arranged in three rows in the Y direction. Further, the heat treatment apparatus 601 may be stacked in a plurality of layers in the vertical direction.

Further, for example, as shown in FIG. 25, the arrangement of the bonding apparatuses 40 and 41 and the first wafer transfer region 42, the coating device 60, the heat treatment devices 61 to 66, and the second wafer transfer region 67 may be changed. The bonding devices 40 and 41 and the first wafer transfer region 42 are disposed on the positive side in the Y direction of the relay devices 50 and 51. Further, the coating device 60, the heat treatment devices 61 to 66, and the second wafer conveyance region 67 are disposed between the relay devices 31 and 32 and the relay devices 50 and 51. Further, in the example of Fig. 25, two coating devices 60 are provided.

In the example of FIG. 25, the temperature adjustment device 30 may be laminated to the relay devices 31, 32, or may be laminated to the relay devices 50, 51. Further, the inspection device 450 may be laminated to the relay devices 31 and 32, the coating device 60, the heat treatment devices 61 to 66, or the relay devices 50 and 51.

Further, in the joining system 1 shown in Fig. 25, the joining device 610 may be additionally provided as shown in Fig. 26. The bonding devices 40, 41, and 610 are arranged side by side in the X direction. Further, the second wafer transfer region 67 is extended in the X direction between the relay devices 50 and 51 and the position adjusting device 52 and the joining devices 40, 41, and 610 (Y direction).

The effects of the above embodiments can be enjoyed in any of the joint systems 1 as shown in Figs. 24 to 26 above. That is, since one position adjusting device 52 can be set to a plurality of engaging devices 40, 41 (, 610) is common, so the area occupied by the joint system 1 can be reduced. Moreover, the manufacturing cost of the joining system 1 can be reduced accordingly. Further, steps A1 to A11 can be performed in one bonding system 1, and a series of bonding processes of the processed wafer W and the supporting wafer S can be appropriately performed.

In the above embodiment, the processed wafer W is placed on the lower side and the support wafer S is placed on the upper side, and the processed wafer W and the supporting wafer S are bonded to each other. The upper and lower configurations of the wafer W to be processed and the support wafer S can be reversed. In this case, the bonding agent G is applied to the bonding surface S _{J of the} supporting wafer S by performing the above steps A1 to A4 on the supporting wafer S. Further, the above-described steps A5 to A7 are performed on the wafer W to be processed, and the front and back surfaces of the wafer W to be processed are inverted. Then, the above steps A8 to A11 are performed to bond the support wafer S and the wafer W to be processed. Among them, from the viewpoint of protecting the circuit on the wafer W to be processed, it is preferable to apply the adhesive G to the wafer W to be processed.

Further, in the above embodiment, the adhesive G is applied to the coated wafer W and the support wafer S in the coating device 60, and the adhesive G may be applied to the processed Both the wafer W and the support wafer S.

In the above embodiment, the wafer W to be processed is heated to a predetermined temperature of 100 ° C to 300 ° C in step A2, but the heat treatment of the wafer W to be processed may be performed in two stages. For example, after heating to the first heat treatment temperature in the heat treatment apparatus 61, for example, 100 to 150 ° C, the heat treatment apparatus 64 is heated to the second heat treatment temperature, for example, 150 ° C to 300 ° C. In this case, the temperature of the heat treatment device 61 and the heating mechanism itself in the heat treatment device 64 can be fixed. Therefore, the processing amount of the bonding process between the processed wafer W and the supporting wafer S can be further improved without the temperature adjustment of the heating mechanism.

The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the invention is not limited by these examples. It is obvious to a person skilled in the art that various modifications or alterations can be conceived within the scope of the invention as set forth in the appended claims.

1‧‧‧ joint system

2‧‧‧Transported to the outbound station

3‧‧‧ Processing station

10‧‧‧匣Box mounting table

11‧‧‧匣Box

20‧‧‧ Wafer Transport Department

21‧‧‧Transportation

22‧‧‧ Wafer transport device

32‧‧‧Transit device

40, 41‧‧‧ joint device

42‧‧‧1st wafer transport area

43‧‧‧1st wafer transport device

51‧‧‧Transit device

52‧‧‧ Position adjustment device

60‧‧‧ Coating device

63, 66‧‧‧ heat treatment unit

67‧‧‧2nd wafer transport area

68‧‧‧2nd wafer transport device

350‧‧‧Control Department

S‧‧‧Support wafer

T‧‧‧Overlay wafer

W‧‧‧Processed Wafer

C _W , C _S , C _T ‧‧‧ shipped in and out of the box

Claims (11)

A bonding system for bonding substrates to each other by an adhesive, comprising: a processing station for performing predetermined processing on the substrate; and transporting the loading and unloading station to transport the stacked substrate to which the substrate or the substrate are bonded to each other The processing station includes: a coating device that applies the adhesive to a substrate; a heat treatment device that heat-treats a substrate coated with the adhesive; and a position adjustment device that performs the heat treatment Position adjustment of one substrate, and position adjustment of another substrate bonded to the substrate, and inverting the front and back surfaces of the other substrate; a plurality of bonding devices by which the bonding agent has been performed The position-adjusting substrates are press-engaged with each other; and a transporting area for transporting the substrate or the laminated substrate to the coating device, the heat treatment device, the position adjustment device, and the plurality of engagement devices. The joining system of claim 1, wherein the processing station has an outer peripheral cleaning device that cleans a peripheral portion of a substrate that has been subjected to heat treatment in the heat treatment device. The joining system of claim 1 or 2, wherein the processing station has: a temperature adjusting device that adjusts a temperature of the laminated substrate that has been joined by the joining device. The joining system of claim 1 or 2, wherein the processing station has: an inspection device that performs at least an inspection of the inside of the laminated substrate or an inspection of the joined state of the laminated substrate. The joining system of claim 1 or 2, wherein the position adjusting device performs position adjustment on a substrate before the coating device applies the adhesive. A bonding method for bonding substrates to each other by an adhesive, comprising the steps of: coating step of applying the adhesive to a substrate in a coating device; and a heat treatment step, which is already a substrate coated with the adhesive in the coating step is transported to a heat treatment device, wherein the substrate is subjected to heat treatment; and a first position adjustment step is performed to transport a substrate that has been heat treated in the heat treatment step to Position adjustment device, wherein the position adjustment of the substrate is performed in the position adjustment device; a second position adjustment step in which position adjustment of another substrate engaged with the substrate is performed, and the other is Reverse the front and back sides of the substrate; a bonding step of transporting a substrate on which the first position adjustment step has been performed to the bonding device, and transporting another substrate on which the second position adjustment step has been performed to the bonding device, in which the bonding is performed by the bonding device a bonding agent for pressing and bonding the one substrate to the other substrate; and in the bonding system including the coating device, the heat treatment device, the position adjusting device, and a plurality of the bonding devices, parallel to the plurality of The substrate is subjected to the bonding step with a plurality of the other substrate. The bonding method of claim 6, wherein after the heat treatment step and before the first position adjustment step, the substrate is transported to the outer peripheral cleaning device, and the substrate is cleaned in the outer peripheral cleaning device. The outer perimeter. The joining method of claim 6 or 7, wherein after the joining step, the laminated substrate is conveyed to a temperature adjusting device, and the temperature of the laminated substrate is adjusted in the temperature adjusting device. The bonding method of claim 6 or 7, wherein after the bonding step, the laminated substrate is transported to an inspection device in which at least inspection of the inside of the laminated substrate or bonding of the laminated substrate is performed State check. The bonding method of claim 6 or 7, wherein before the coating step, a position adjustment of a substrate before the application of the adhesive is performed in the position adjusting device. A readable computer memory medium storing a program for operation on a computer that controls a control portion of the joint system to cause the joint system to perform the joint method of claim 6 or 7.