TW201413167A - Lighting apparatus - Google Patents

Abstract

A lighting apparatus including a base with a coupling rim and a supporting plate and a housing coupled to the coupling rim such that the supporting plate is covered. The housing includes a channel part to guide air in and an air introduction hole to introduce the guided air into an inner space of the housing. A cooling fan is disposed on an upper surface of the supporting plate covered by the housing, wherein the cooling fan draws air introduced through the air introduction hole into the inner space of the housing, and discharges the in-drawn air outside through an air discharging hole in the base. A light source module is mounted on a lower surface of the supporting plate, wherein the channel part provides a region depressed in a stepped manner along an outer surface of the housing.

Description

Illuminating device [Cross-Reference to Related Applications]

Korean Patent Application No. 10-2012-0087933, filed on August 10, 2012 in the Korean Intellectual Property Office, and Korean Patent Application No. 10-2013-0073701, filed on June 26, 2013, is preferred. The entire disclosure of the patent application is hereby incorporated by reference.

The apparatus and method according to an exemplary embodiment relate to a light emitting device, and more particularly to a light emitting device including a substrate, a housing, a cooling fan, and a light source.

A light-emitting device using a light emitting diode (LED) as a light source can transfer heat generated from a light source to a heat sink via a substrate, and dissipate heat into the surrounding air. Transferring heat to ambient air via natural convection exhibits extremely low efficiency, and therefore, a very large heat sink is mounted on the light source to cool the light source. As a method of improving this limitation, various methods have been considered, such as a method of increasing contact between a light source and a substrate to enhance heat conduction, and forming a substrate with a metal material to enhance heat transfer. The method of introduction and the like.

One aspect of the illustrative embodiments provides a light emitting device that can overcome the limited heat radiation efficiency according to natural convection to extend the life of the light source and improve light output by significantly increasing heat radiation efficiency.

Another aspect of the illustrative embodiments provides a light emitting device having dimensions that fall within the limits of the American National Standards Institute (ANSI) standard and having enhanced heat radiation relative to high output.

Another aspect of the exemplary embodiment provides a light emitting device having a size that falls within a range set by the American National Standards Institute (ANSI) and has enhanced heat radiation relative to its high output.

In accordance with an aspect of the exemplary embodiments, a light emitting device is provided, comprising: a substrate including a coupling rim and a support plate on an inner side of the coupling rim; the housing configured to couple to the coupling rim So that the support plate is covered, the outer casing includes a channel portion configured to direct the introduction of air and an air introduction hole configured to introduce air guided through the channel portion into the inner space of the outer casing; the cooling fan Located on an upper surface of the support plate covered by the outer casing, wherein the cooling fan is configured to draw air introduced through the air introduction hole into the inner space of the outer casing, and discharge the inhaled air through the air discharge hole in the base Air; and a light source module mounted on a lower surface of the support plate, wherein the channel portion is provided along the outer surface of the outer casing The area where the ladder is recessed.

The air introduction hole may have an annular shape along a circumference of the outer casing in a region recessed in a stepwise manner in the passage portion, and wherein the passage portion may extend upward from the lower end of the outer casing along the outer side of the outer casing to communicate with the air introduction hole.

The air introduction hole may have an annular shape along a circumference of the outer casing, and the passage portion may include: a first passage along a circumference of the outer casing in a position corresponding to the air introduction hole to communicate with the air introduction hole; and a second The passage extends from the first passage to the lower end of the outer casing to be exposed to the outside.

The channel portion can include a plurality of channels, and at least one of the plurality of channels can be recessed in the outer surface of the outer casing to communicate with the air introduction aperture.

The coupling rim may include a groove having a shape and a position corresponding to the channel portion such that the coupling rim may be coupled to the channel portion of the outer casing.

The coupling rim may include a flange portion that projects outwardly from a lower end thereof, and the flange portion may have a plurality of vent holes formed in a circumference of the coupling rim.

The substrate may include an air discharge hole between the outer circumferential surface of the support plate and the inner surface of the coupling rim to radially discharge air introduced into the inner space of the outer casing.

The substrate may include an air discharge hole in a central portion of the support plate to discharge air introduced into an inner space of the outer casing.

The substrate may include a plurality of heat radiating fins on an upper surface of the support plate facing the cooling fan.

According to another aspect of the exemplary embodiments, a light source module includes: a substrate having an air discharge hole; and an outer casing including a step along an outer surface of the outer casing a channel portion provided by the recessed region, and an air introduction aperture configured to introduce air guided through the channel portion into an interior space of the outer casing, wherein the outer casing is configured to be disposed on an upper side of the substrate; a cooling fan configured to be disposed within the outer casing and configured to draw air into the interior space of the outer casing and to discharge the inhaled air outward through the air venting aperture; and the light source module configured to It is disposed on a lower side of the substrate and includes at least one light emitting element and at least one lens disposed on the light emitting element.

The at least one lens may have a first surface facing the at least one light emitting element and a second surface opposite the first surface, the at least one lens may include a central incident surface and a reflective portion, the central incident surface configured to be derived from at least one Light of the illuminating element is incident on a central incident surface, the reflective portion being configured to protrude toward the at least one illuminating element along a circumference of the central incident surface, wherein the reflecting portion is symmetrical based on a central optical axis, wherein the central incident surface and the reflection A portion is disposed in the first surface, and wherein the refractive portion is disposed in the second surface and configured to protrude in a direction opposite the at least one light emitting element and configured to be symmetric based on the optical axis.

The reflective portion may include a first reflective portion and a second reflective portion, the first reflective portion and the second reflective portion having different radii of rotation and concentric with respect to the optical axis, wherein the first reflective portion and the second reflective portion may have different sizes.

The first reflective portion and the second reflective portion may each have a side incident surface, light from the at least one light emitting element is incident to the side incident surface, and a reflective surface that reflects the incident light to the second surface.

The refractive portion may be configured to be disposed in close proximity to the at least one light emitting element, and the refractive portion may have: a first refractive portion having a curved surface having an optical axis as a vertex; and a second refractive portion relative to the optical axis And a plurality of concentric circles are formed and have a convex-concave structure formed along the circumference of the first refractive portion.

The reflective portion may be configured to be disposed outside the refractive portion with respect to the optical axis such that the reflective portion surrounds the refractive portion.

1‧‧‧ ceiling

2‧‧‧ holes

3‧‧‧Fixed unit

10‧‧‧Lighting device

10'‧‧‧Lighting device

10"‧‧‧Lighting device

100‧‧‧Base

100'‧‧‧Base

100"‧‧‧ base

110‧‧‧ coupling edge

110'‧‧‧ coupling edge

110"‧‧‧ coupling edge

111‧‧‧Flange section

111'‧‧‧Flange section

112‧‧‧ Groove

112"‧‧‧ Groove

113'‧‧‧ vents

120‧‧‧Support board

120'‧‧‧Support board

120"‧‧‧ support plate

120a‧‧‧Surface

120a'‧‧‧ surface

120b‧‧‧Other surface

120b'‧‧‧ another surface

121‧‧‧Heat radiation fins

121'‧‧‧Heat radiation fins

121"‧‧‧ Heat radiation fins

122‧‧‧Fixed section

122'‧‧‧Fixed part

123‧‧‧ side wall

123'‧‧‧ side wall

130‧‧‧Air discharge hole

130'‧‧‧Air vent

130"‧‧‧Air vents

200‧‧‧ Shell

200'‧‧‧ Shell

200"‧‧‧ shell

210‧‧‧Terminal part

210'‧‧‧Terminal part

210"‧‧‧ terminal part

220‧‧‧Channel section

220'‧‧‧Channel section

220"‧‧‧ channel section

221‧‧‧first channel a

222‧‧‧second channel

230‧‧‧Air introduction hole

230'‧‧‧Air introduction hole

230"‧‧‧Air introduction hole

300‧‧‧Cooling fan

300'‧‧‧ cooling fan

300"‧‧‧ cooling fan

400‧‧‧Light source module

400'‧‧‧Light source module

400"‧‧‧ light source module

410‧‧‧Substrate

410'‧‧‧Substrate

410"‧‧‧ substrate

420‧‧‧Lighting elements

420'‧‧‧Lighting elements

420"‧‧‧Lighting elements

430'‧‧‧through hole

440"‧‧‧ lens unit

440"-1‧‧‧ first surface

440"-2‧‧‧ second surface

450"‧‧‧ lens

451"‧‧‧ central incident surface

452"‧‧‧reflecting part

452a"‧‧‧First reflection part

452b"‧‧‧second reflection part

453"‧‧‧ side incident surface

454"‧‧‧reflective surface

455"‧‧‧Refracting part

455a"‧‧‧First Refraction Section

455b"‧‧‧second refraction part

456"‧‧‧ recessed part

500‧‧‧Reflow prevention section

500'‧‧‧Reflow prevention section

510‧‧‧Circular body

511‧‧‧Central hole

520‧‧ ‧ sales guide

600‧‧‧ cover

600'‧‧‧ cover

610‧‧ lens

620'‧‧‧Drainage pipe

700"‧‧‧ spacers

710"‧‧‧Central hole

800"‧‧‧Power Supply Unit

810"‧‧‧ drive circuit

820"‧‧‧electrode pins

830"‧‧‧ pin holder

1100‧‧‧ board

1110‧‧‧Insert substrate

1111‧‧‧ circuit pattern

1112‧‧‧ circuit pattern

1130‧‧‧Insulation film

1140‧‧‧Upper heat diffusion plate

1150‧‧‧through hole

1160‧‧‧lower heat diffusion plate

1200‧‧‧ board

1200'‧‧‧Metal sheet

1210‧‧‧First metal layer

1210'‧‧‧First metal layer

1220‧‧‧Insulation

1220'‧‧‧Insulation

1230‧‧‧Second metal layer

1230'‧‧‧Second metal layer

1300‧‧‧ board

1310‧‧‧Metal support substrate

1320‧‧‧RCC film

1321‧‧‧Insulation

1322‧‧‧Copper foil

1330‧‧‧Protective layer

1340‧‧‧ solder

1341‧‧‧ solder

1400‧‧‧Anodized metal plate

1410‧‧‧Metal plate

1420‧‧‧Anodized film

1430‧‧‧Metal wiring

1500‧‧‧ board

1510‧‧‧Metal substrate

1520‧‧‧Insulating resin

1530‧‧‧ circuit pattern

1600‧‧‧ board

1610‧‧‧FPCB

1611‧‧‧through hole

1620‧‧‧Support substrate

1630‧‧‧Metal wiring

1640‧‧‧Heat dissipative adhesive

2000‧‧‧Lighting elements

2001‧‧‧Substrate

2002‧‧‧buffer layer

2004‧‧‧First Conductive Type Semiconductor Layer

2005‧‧‧Active layer

2006‧‧‧Second conductive type semiconductor layer

2008‧‧‧Ohm contact layer

2009a‧‧‧First electrode

2009b‧‧‧second electrode

2100‧‧‧LED chip

2101‧‧‧Substrate

2102‧‧‧Insulation

2104‧‧‧First Conductive Type Semiconductor Layer

2105‧‧‧Active layer

2106‧‧‧Second conductive type semiconductor layer

2107‧‧‧Second electrode layer

2108‧‧‧First electrode layer

2109‧‧‧Electrical pad unit

2200‧‧‧ nano LED chip

2201‧‧‧Substrate

2202‧‧‧ basal layer

2203‧‧‧Photomask

2204‧‧‧First Conductive Type Nano Core

2205‧‧‧Active layer

2206‧‧‧Second conductive type semiconductor layer

2207‧‧‧Filling materials

2208‧‧‧Ohm contact layer

2209a‧‧‧first electrode

2209b‧‧‧second electrode

2300‧‧‧Semiconductor light-emitting components

2301‧‧‧Substrate

2303‧‧‧Insulation

2304‧‧‧First Conductive Type Semiconductor Layer

2305‧‧‧Active layer

2306‧‧‧Second conductive type semiconductor layer

2308a‧‧‧First electrode

2308b‧‧‧second electrode

2309a‧‧‧Electrical connection unit

2309b‧‧‧Electrical connection unit

2310‧‧‧LED chip

2311‧‧‧Substrate body

2312a‧‧‧First upper electrode layer

2312b‧‧‧First lower electrode layer

2313‧‧‧Perforation

2313a‧‧‧Second upper electrode layer

2313b‧‧‧Second lower electrode layer

2319a‧‧‧First electrode pad

2319b‧‧‧Second electrode pad

2320‧‧‧Installation substrate

10000‧‧‧Lighting system

10000'‧‧‧Lighting system

10000"‧‧‧Lighting system

10010‧‧‧Sensor unit

10011‧‧‧temperature sensor

10012‧‧‧Humidity Sensor

10020‧‧‧Control unit

10030‧‧‧ drive unit

10040‧‧‧Lighting unit

10041‧‧‧First light-emitting element

10042‧‧‧second light-emitting element

10100‧‧‧Wireless Sensing Module

10110‧‧‧Sports sensor

10120‧‧‧Lighting intensity sensor

10130‧‧‧First ZigBee communication unit

10200‧‧‧Wireless lighting control device

10210‧‧‧Second ZigBee communication unit

10220‧‧‧Sensor signal analysis unit

10230‧‧‧Operation Control Unit

11000‧‧‧Sports sensor unit

12000‧‧‧Lighting intensity sensor unit

13000‧‧‧Lighting unit

14000‧‧‧Control unit

A‧‧‧Air

A'‧‧‧Air

C‧‧‧ uneven structure

E‧‧‧Exposed areas

H‧‧‧Contact hole

H‧‧‧depth

h ₁ ‧‧‧thickness

h ₂ ‧‧‧thickness

I‧‧‧Insulation distance

L‧‧‧Light laminate

M1‧‧‧Mold

M2‧‧‧Mold

N‧‧N nm light structure

P‧‧‧Top sales

O‧‧‧ center axis

R‧‧‧ step part

S‧‧‧screw

S10~S60, S110~S130, S200~S240, S310~S350‧‧‧ operation

T ₁ ‧‧‧ size

T ₂ ‧‧‧ size

T _L ‧‧‧height (or thickness)

T _T ‧‧‧ size

W ₁ ‧‧‧Exposure width

W ₂ ‧‧‧Width

Z‧‧‧ optical axis

δ ₁ ‧‧‧ bevel

The above and other aspects, features, and other advantages will be more clearly understood from the following detailed description.

FIG. 1 is an exploded perspective view schematically illustrating a light emitting device according to an exemplary embodiment.

FIG. 2 is a cross-sectional view schematically illustrating a light emitting device according to an exemplary embodiment.

FIG. 3 is a perspective view schematically illustrating a substrate in the light emitting device of FIG. 1. FIG.

4 is a perspective view schematically illustrating a state in which a cooling fan is disposed on the base of FIG. 3.

Fig. 5 is a perspective view schematically illustrating a state in which the backflow prevention portion is disposed on the cooling fan of Fig. 4.

FIG. 6 is a cross-sectional view schematically illustrating a state in which a light emitting device is mounted on a ceiling, according to an exemplary embodiment.

Figure 7 is a perspective view of Figure 6.

FIG. 8 is an exploded perspective view schematically illustrating a light emitting device according to another exemplary embodiment.

FIG. 9 is a cross-sectional view schematically illustrating a light emitting device according to another exemplary embodiment.

Figure 10 is a perspective view schematically illustrating a substrate in the light-emitting device of Figure 8.

Fig. 11 is a perspective view schematically illustrating a state in which a cooling fan is disposed on the base of Fig. 10.

Fig. 12 is a perspective view schematically illustrating a state in which the backflow prevention portion is disposed on the cooling fan of Fig. 11.

FIG. 13 is a cross-sectional view schematically illustrating a state in which a light emitting device is mounted on a ceiling according to another exemplary embodiment.

Figure 14 is a perspective view of Figure 13.

FIG. 15 is an exploded perspective view schematically illustrating a light emitting device according to another exemplary embodiment.

FIG. 16 is a cross-sectional view schematically illustrating a light emitting device according to another exemplary embodiment.

FIG. 17 is a cross-sectional view schematically illustrating a state in which a light emitting device is mounted on a ceiling according to another exemplary embodiment.

Figure 18 is a perspective view schematically illustrating a light source module of the light-emitting device of Figure 15 .

19 is a perspective view schematically illustrating a lens unit of the light source module of FIG. 18.

20A and 20B are cross-sectional perspective views schematically illustrating a lens of the lens unit of Fig. 19.

21 is a cross-sectional view schematically illustrating an optical path of the light source module of FIG. 18.

Fig. 22 is a graph illustrating a light distribution curve of a lens.

23A to 23C are cross-sectional views schematically illustrating a procedure of manufacturing a lens unit having a lens using a mold.

24A and 24B are cross-sectional views schematically illustrating a collecting lens having a general structure and a thin lens according to one or more exemplary embodiments.

Figure 25 is a cross-sectional view schematically illustrating an exemplary embodiment of a substrate that can be used in a light-emitting element.

Figure 26 is a cross-sectional view schematically illustrating another embodiment of a substrate.

FIG. 27 is a cross-sectional view schematically illustrating a substrate according to the modification of FIG.

28 through 31 are cross-sectional views schematically illustrating various exemplary embodiments of a substrate.

FIG. 32 is a cross-sectional view schematically illustrating an example of a light-emitting element (LED wafer) usable in a light-emitting element, according to various exemplary embodiments.

Fig. 33 is a cross-sectional view schematically illustrating another example of the light-emitting element (LED wafer) of Fig. 32.

Fig. 34 is a cross-sectional view schematically illustrating another example of the light-emitting element (LED wafer) of Fig. 32.

35 is a cross-sectional view illustrating an example of an LED wafer mounted on a mounting substrate as a light-emitting element (LED wafer) usable in a light-emitting element according to various exemplary embodiments.

Figure 36 is a 1931 chromaticity diagram of the International Commission on Illumination (CIE).

FIG. 37 is a block diagram schematically illustrating a lighting system in accordance with an example embodiment.

FIG. 38 is a block diagram schematically illustrating a detailed configuration of a light emitting unit of the light emitting system illustrated in FIG. 37, according to an exemplary embodiment.

FIG. 39 is a flow chart illustrating a method for controlling the illumination system illustrated in FIG. 37, in accordance with an exemplary embodiment.

FIG. 40 is a view schematically illustrating the use of the illumination system illustrated in FIG. 37, according to an exemplary embodiment.

FIG. 41 is a block diagram of a lighting system in accordance with another exemplary embodiment.

FIG. 42 is a view illustrating a format of a ZigBee signal, according to an exemplary embodiment.

FIG. 43 is a view illustrating a sensing signal analysis unit and an operation control unit, according to an exemplary embodiment.

44 is a flow chart illustrating operation of a wireless lighting system, in accordance with an illustrative embodiment.

FIG. 45 is a block diagram schematically illustrating constituent components of a lighting system according to another exemplary embodiment.

FIG. 46 is a flowchart illustrating a method for controlling an illumination system, according to an exemplary embodiment.

FIG. 47 illustrates a method for controlling a lighting system according to another exemplary embodiment. Flow chart of the method.

FIG. 48 is a flowchart illustrating a method for controlling an illumination system, according to another exemplary embodiment.

The detailed description is provided to assist the reader in a comprehensive understanding of the methods, devices and/or systems described herein. Accordingly, various modifications, adaptations and equivalents of the methods, devices and/or systems described herein are suggested to those skilled in the art. The process steps and/or the processes of the operations are examples; however, the sequence of operations is not limited to the sequences set forth herein, and may be changed as known in the art, rather than steps and/or operations having to occur in a particular order. . In addition, well-known functions and individual descriptions of the construction may be omitted for clarity and conciseness.

The illustrative embodiments will now be described in detail with reference to the drawings. Hereinafter, the exemplary embodiments will be described in detail with reference to the accompanying drawings. However, the illustrative embodiments may be embodied in many different forms and should not be construed as being limited to the illustrative embodiments set forth herein. Rather, these illustrative embodiments are provided so that this disclosure will be thorough and complete and will convey the scope of the invention. The shapes and sizes of the components may be exaggerated for the sake of clarity, and the same reference numerals will be used throughout the drawings to refer to the same or similar components.

Although the terms used herein are generic terms that are currently widely used and are considered in view of their function, the meaning of the terms may vary depending on the intention of the person skilled in the art, the judicial precedent, or the appearance of new technology. In addition, some specific techniques The language can be arbitrarily selected by the applicant, and in this case, the meaning of the terms may be specifically defined in the description of the exemplary embodiments. Therefore, the terms should not be defined by their simple names, but by the context of their meaning and the description of the illustrative embodiments. As used herein, an expression such as "at least one of" is used to modify the entire list of parts before the list of parts, rather than the individual parts of the list.

It is to be understood that the term "comprising" and / or "comprising", when used in the specification, is intended to mean the presence of the components and/or components described, but does not exclude the presence or addition of one or more components and/or components. As used herein, the term "module" refers to a unit that can perform at least one function or operation and that can be implemented using any form of hardware, software, or a combination thereof.

A light emitting device according to an exemplary embodiment will be described with reference to FIGS. 1 and 2.

1 is an exploded perspective view schematically illustrating a light emitting device according to an exemplary embodiment, and FIG. 2 is a cross-sectional view schematically illustrating a light emitting device according to an exemplary embodiment.

Referring to FIGS. 1 and 2 , a light emitting device 10 according to an exemplary embodiment may include a substrate 100 , a housing 200 , a cooling fan 300 , and a light source module 400 .

The substrate 100, the frame member having the cooling fan 300, and the light source module 400 (the frame member and the light source module 400 are mounted on the substrate 100 for fixing to the substrate 100) may be coupled to the rim 110 and disposed on the inner side of the coupling rim 100. The upper support plate 120 is coupled.

The coupling rim 110 has an annular shape perpendicular to the central axis (O) and is A flange portion 111 that protrudes outward from a lower end of the coupling rim is included. As illustrated in FIGS. 6 and 7, when the light-emitting device 10 is mounted on a structure (for example, the ceiling 1), the flange portion 111 can be inserted into the hole 2 provided in the ceiling 1, thereby being used for the light-emitting device. 10 fixed to the ceiling 1.

The coupling rim 110 may be provided with a recess 112 that is recessed toward a central portion thereof. The groove 112 may have a shape corresponding to the channel portion 220 of the outer casing 200 to be described later, and may be disposed in a position corresponding to the channel portion 220 of the outer casing 200. Thereby, the channel portion 220 can be coupled to the groove 112 to be exposed to the outside via the lower portion of the coupling rim 110.

The terms used in the specification (such as "upper portion", "lower portion", "upper surface", "lower surface" and the like) are provided based on the drawings, and in fact, the term may be based on illumination The orientation of the device changes.

The substrate 100 used in the present exemplary embodiment can be described in detail with reference to FIG. As shown in FIG. 3, the support plate 120 may be disposed on the inner circumferential surface of the coupling rim 110 in a horizontal direction perpendicular to the central axis (O) direction, and may be partially connected to the coupling rim 110. The support plate 120 may have a flat surface (upper surface) 120a and another surface (lower surface) 120b opposed to each other, and a plurality of heat radiation fins 121 may be disposed on the surface 120a. The plurality of heat radiation fins 121 are radially disposed in a direction from the center of the support plate 120 toward the edges thereof. In this case, the plurality of heat radiation fins 121 each have a curved surface and may be integrally arranged in a spiral shape. The exemplary embodiment of FIG. 3 illustrates that a plurality of heat radiating fins 121 having curved surfaces are arranged in a spiral shape. However, it should be understood that one or more other exemplary embodiments are not limited thereto, and the heat radiating fins Sheet 121 can have a variety of shapes, such as a linear shape.

The surface 120a may have a fixed portion 122 from which a predetermined height is raised. The fixing portion 122 may be provided with a screw hole so that the outer casing 200 and the cooling fan 300 which will be described later may be fixed by a fixing mechanism such as a screw s.

The light source module 400, which will be described later, can be mounted on the other surface 120b of the support plate 120. The other surface 120b can have a sidewall 123 that protrudes a predetermined depth along its edge and downward. A space having a predetermined size is disposed inside the side wall 123 to accommodate the light source module 400 therein.

The substrate 100 may include an air discharge hole 130 having a slit shape between an outer circumferential surface of the support plate 120 and an inner surface of the coupling rim 110. The air discharge hole 130 may serve as a passage through which air passes in the direction from the surface 120a to the other surface 120b such that air does not stagnate on one side of the surface 120a and maintains continuous flow of the air.

The substrate 100 may be a portion that directly contacts the light source module 400 disposed as a heat source, and thus may include a material having excellent thermal conductivity to perform a heat radiation function similar to that of the heat sink. For example, the substrate 100 integrally formed by the coupling rim 110 and the support plate 120 can be formed by injection molding using a metal or resin having excellent thermal conductivity or the like. Additionally, the coupling rim 110 and the support plate 120 can be individually fabricated as individual components and then assembled. In this case, the support plate 120 may be formed of metal or resin having excellent thermal conductivity, and the coupling rim 110 (ie, a portion directly grasped by a user during a working operation such as replacement of the illuminating device) may have a relative Low thermal conductivity to prevent the formation of burnt damaged materials.

As shown in FIGS. 1 and 2 , the outer casing 200 can be coupled to one side of the substrate 100 , and in particular to the coupling rim 110 to cover the support plate 120 . The outer casing 200 has an upwardly convex parabolic shape and may include a terminal portion 210 on an upper end of the outer casing 200 for connection with an external power source (eg, a socket), and an opening formed in the lower end of the outer casing 200 coupled to the base 100. Specifically, the outer casing 200 includes a channel portion 220 that forms a region recessed in a stepwise manner with respect to an outer surface of the outer casing 200 to guide introduction of air from the outside, and an air introduction hole 230 to be guided via the channel portion 220. The air is introduced into the internal space of the outer casing 200.

The air introduction hole 230 may be adjacent to the upper end of the outer casing 200 and formed to have an annular shape along the circumference of the outer casing 200. The channel portion 220 can include a plurality of channels, and the channel portion 220 can be disposed in a manner such that at least one channel is recessed in the outer surface of the outer casing 200 and extends upwardly from the lower end of the outer casing 200 along the outer side of the outer casing 200. To communicate with the air introduction hole 230.

In particular, the channel portion 220 may include a first passage 221 that is continuous along the circumference of the outer casing 200 at a position corresponding to the air introduction hole 230 to communicate with the air introduction hole 230, and a second passage 222 from the first passage 221 It extends to the lower end of the outer casing 200 to be exposed to the outside. The second passage 222 may be continuously connected to the groove 112 coupled to the coupling rim 110 of the lower end of the outer casing 200, and may extend to a lower portion of the coupling rim 110 to be exposed to the outside. Thus, air introduced from the outside may be guided along a portion of the outer surface of the outer casing 200 (ie, the channel portion 220) from a lower portion of the coupling rim 110 to an upper portion of the coupling rim 110, and may then be via The air is introduced into the hole 230 to be introduced into the inner space of the outer casing 200. This exemplary embodiment illustrates that the second Channels 222 may be arranged in pairs, with pairs of channels 222 facing each other. However, it should be understood that one or more other exemplary embodiments are not limited thereto, and the number and location of the second channels 222 can be modified in various ways.

FIG. 4 schematically illustrates the placement state of the cooling fan 300 on the substrate 100. As illustrated in FIG. 4, the cooling fan 300 may be disposed in the outer casing 200. The cooling fan 300 may be disposed on the surface 120a of the support plate 120, and may forcibly suck air (air introduced from the outside) into the inner space of the outer casing 200, and discharge the sucked air to the air through the air discharge hole 130 to external. By this forced air flow, heat generated from the light source module 400 mounted on the substrate 100 can be quickly dissipated to the outside, thereby lowering the temperature of the light-emitting device 10.

The cooling fan 300 may be disposed on the fixed portion 122 of the support plate 120 to be supportably fixed to the fixed portion 122. The cooling fan 300 (specifically, the upper surface of the cooling fan 300) may be positioned to be coplanar with the air introduction hole 230 of the outer casing 200, or may be disposed in a position lower than the air introduction hole 230. Thereby, the air sucked into the inner space of the outer casing 200 via the air introduction hole 230 can pass through the cooling fan 300 and move to the substrate 100 to realize a simplified air moving path, and thus the air flow can be smoothly performed to improve the heat radiation. effectiveness.

FIG. 5 schematically illustrates the placement of the backflow prevention portion 500 on the cooling fan 300. As illustrated in FIG. 5, the backflow prevention portion 500 may be disposed on the cooling fan 300 and prevent reverse flow of air sucked into the inner space of the outer casing 200 via the cooling fan 300. The backflow prevention portion 500 may include an annular body 510 having a central hole 511 and a plurality of guide pins 520 extending to the central hole 511. This example The embodiment illustrates that the plurality of guide pins 520 are curved to have a curved surface and are arranged in a spiral shape. However, it should be understood that one or more other exemplary embodiments are not limited thereto.

The annular body 510 can be disposed such that its outer surface contacts the inner surface of the outer casing 200, so that the gap between the cooling fan 300 and the outer casing 200 can be blocked. The central hole 511 may have a shape corresponding to the shape of the cooling fan 300. The annular body 510 can be positioned at least coplanar with the air introduction aperture 230 of the outer casing 200 or can be disposed in a position lower than the air introduction aperture 230. In this case, the cooling fan 300 may be disposed in a position lower than the backflow prevention portion 500. Therefore, the air sucked into the inner space of the outer casing 200 via the air introduction hole 230 can flow to the cooling fan 300 via the central hole 511 of the annular body 510.

Meanwhile, as shown in FIGS. 1 and 2, the light source module 400 may be mounted on the other surface 120b opposite to the first surface 120a of the support plate 120 on which the plurality of heat radiation fins 121 are disposed, and emit light. The light source module 400 can include a substrate 410 and at least one light emitting element 420 mounted on the substrate 410.

The substrate 410 may be a general FR4 type printed circuit board (PCB), and may include an epoxy resin, a triazine, a silicon, a polyimide, or the like. Organic resin materials and other organic resin materials. Alternatively, the substrate 410 may comprise a ceramic material such as aluminum nitride (AIN), aluminum oxide (Al 2 O 3 ) or the like or a metal and metal compound material, and may be a metal core printed circuit. Board,MCPCB).

The light emitting element 420 can be mounted on the substrate 410 and can be electrically connected to the substrate 410. Light-emitting element 420 (ie, half of light of a predetermined wavelength due to external power) The conductor element) may comprise a light emitting diode (LED). The light emitting element 420 can emit blue light, green light, or red light according to a material contained therein, and can emit white light.

The light emitting elements 420 may be disposed in a plurality of forms, and the plurality of light emitting elements 420 may be disposed on the substrate 410. In this case, the plurality of light-emitting elements 420 can be configured in various ways, such as the same type of elements configured to produce light of the same wavelength or different types of elements that produce light of different wavelengths. Light emitting element 420 can be an LED wafer or can be a single package containing LED wafers therein.

Meanwhile, the cover 600 covering the substrate 410 and the light emitting element 420 may be mounted on the substrate 100. The cover 600 may comprise a transparent or translucent material (eg, a resin such as tantalum, epoxy, or the like) to illuminate light generated from the light source module 400 and may also include glass.

Cover 600 can include lens 610 to correspond to individual light emitting elements 420. Lens 610 can be positioned to face individual light-emitting elements 420 and control the orientation angle of light generated from light-emitting elements 420. The present exemplary embodiment illustrates that the cover 600 has a lens 610 disposed thereon to correspond to the individual light-emitting elements 420. However, it should be understood that one or more exemplary embodiments are not limited thereto. The cover 600 may protrude in a convex lens shape such that the cover 600 may itself function as a lens.

The cover 600 may contain a light diffusing agent. The light diffusing agent may have a nano-sized particle size and comprise at least one material selected from the group consisting of SiO2, TiO2, Al2O3, and the like.

6 and 7 schematically illustrate a manner in which the light emitting device 10 is mounted on the ceiling 1 according to the present exemplary embodiment. The fixing unit 3 can be mounted on the ceiling 1 And the light emitting device 10 can be coupled and fixed to the ceiling 1. The fixing unit 3 can supply electric power to the light emitting device 10. The light emitting device 10 can be fixed to the upper portion of the ceiling 1 in a sealed state by the fixing unit 3.

As illustrated in Figures 6 and 7, the lighting device 10 can be coupled to the ceiling 1 in a manner such that the coupling rim 110 is inserted into the aperture 2 of the ceiling 1. The hole 2 of the ceiling 1 may be disposed to correspond to the coupling rim 110, and therefore, the gap may not be generated by the coupling rim 110 and the hole 2 except for the space corresponding to the groove 112 of the coupling rim 110. between. The present exemplary embodiment illustrates that the light emitting device 10 is inserted into the hole 2 of the ceiling 1. However, it should be understood that one or more other exemplary embodiments are not limited thereto. That is, the fixing unit 3 can be inserted and mounted in the hole 2 of the ceiling 1 , and the light emitting device 10 can be inserted and coupled to the fixed unit 3 via the coupling rim 110 . Even in this case, a gap may not be generated between the coupling rim 110 and the groove 112 except for the space corresponding to the groove 112 of the coupling rim 110.

When the cooling fan 300 disposed in the outer casing 200 is operated via electric power supplied to the cooling fan 300, the air A is introduced from the outside via the groove 112 (ie, a space provided between the coupling rim 110 and the ceiling 1) And the introduced air A can be guided along the channel portion 220 in the outer surface of the outer casing 200 in the direction from the lower end to the upper end of the outer casing 200. Further, the air A can be drawn into the inner space of the outer casing 200 through the air introduction hole 230 of the outer casing 200. The air A sucked into the inner space of the outer casing 200 may be transferred to the support plate 120 of the substrate 100 via the cooling fan 300, and radially dispersed to the edge of the support plate 120 along the heat radiation fins 121 provided on the support plate 120. And discharged to the outside via the air discharge hole 130. In this case, the heated air A' on the support plate 120 can be forcibly sucked into the outer casing 200 and discharged to the outside together with the flow of the air A discharged to the outside, thereby supporting the plate 120 and being mounted on the support The light source module 400 on the board 120 can be cooled. Further, the inside of the outer casing 200 may be cooled by continuous suction into the outer casing 200 and having low temperature air A. In particular, the light emitting device 10 according to the present exemplary embodiment may include the channel portion 220 in the outer surface of the outer casing 200 in order to achieve the flow of the air A. Therefore, even in the case where the light-emitting device 10 is mounted in the sealing fixing unit 3 covering the outer casing 200 (for example, a socket structure having a shape corresponding to the shape of the outer casing and closely attached to the outer surface of the outer casing), air introduced from the outside A may be drawn into the outer casing 200 via a space formed by the passage portion 220. As described above, the air A introduced from the outside and having a low temperature can be forcibly sucked in to cool the light-emitting device 10, whereby the heat radiation efficiency can be remarkably improved to improve the luminous efficiency and extend the life of the light source module 400.

Referring to Figures 8 and 9, a light emitting device according to another exemplary embodiment will be described.

FIG. 8 is an exploded perspective view schematically illustrating a light emitting device according to another exemplary embodiment, and FIG. 9 is a cross-sectional view schematically illustrating a light emitting device according to another exemplary embodiment.

The components of the light-emitting device configured in accordance with another exemplary embodiment illustrated in FIGS. 8 and 9 are substantially the same as the components of the light-emitting device of the exemplary embodiment illustrated in FIGS. 1 through 7 in terms of its basic structure Or similar. However, since the substrate and the light source module according to another exemplary embodiment have the same as explained with reference to FIGS. 1 to 7 The substrate and the light source module of the exemplary embodiment have different structures, so a description of components overlapping with the description of the components of the foregoing exemplary embodiments will be omitted, and the configuration of the substrate and the light source module will be mainly described.

Referring to FIGS. 8 and 9, a light emitting device 10' according to another exemplary embodiment may include a substrate 100', a housing 200', a cooling fan 300', and a light source module 400'.

The substrate 100' can include a coupling rim 110' and a support plate 120' disposed on the inner side of the coupling rim 110'.

The coupling rim 110' has an annular shape disposed parallel to the central axis (O), and may include a flange portion 111' that protrudes outward from the lower end thereof. As illustrated in FIGS. 13 and 14, when the light-emitting device 10' is mounted on a structure (for example, the ceiling 1), the flange portion 111' can be inserted into the hole 2 formed in the ceiling 1, whereby The light emitting device 10' is fixed to the ceiling 1.

The flange portion 111' can have a plurality of vents 113' located in the circumference of the coupling rim 110'. A plurality of vents 113' may be coupled to the channel portion 220' of the outer casing 200' such that air A may pass through the vent 113' and move to the channel portion 220'.

The substrate 100' used in the present exemplary embodiment will be described in detail below with reference to FIG. As illustrated in FIG. 10, the support plate 120' may be disposed on the inner circumferential surface of the coupling rim 110' such that the support plate 120' is perpendicular to the central axis (O) and its outer circumferential surface is integrally connectable to the coupling edge. Side 110'.

The support plate 120' may have one surface (upper surface) 120a' and another surface (lower surface) 120b' opposite to each other, and a plurality of heat radiation fins 121' may be disposed on the first surface 120a'. The plurality of heat radiation fins 121 ′ are radially disposed in the self-supporting plate 120 ′ The heart is facing the direction of its edge. In this case, the plurality of heat radiation fins 121' each have a curved surface and may be integrally arranged in a spiral shape. The present exemplary embodiment illustrates that a plurality of heat radiation fins 121' having curved surfaces are arranged in a spiral shape. However, it should be understood that one or more other exemplary embodiments are not limited thereto, and the heat radiation fins 121' may have various shapes, for example, a linear shape.

The surface 120a' may have a fixed portion 122' from which a predetermined height is raised. The fixed portion 122' may be provided with a threaded hole such that the outer casing 200' and the cooling fan 300' may be fixed by a fixing mechanism such as a screw s.

The light source module 400' can be mounted on the other surface 120b' of the support plate 120'. The other surface 120b' may be provided with side walls 123' along its edges and projecting downwardly to a predetermined depth. A space having a predetermined size is disposed inside the side wall 123' to accommodate the light source module 400' therein.

The substrate 100' may include an air discharge hole 130' in a central portion of the support plate 120'. The air discharge hole 130' may serve as a passage through which the air A' passes in the direction from the surface 120a' to the other surface 120b' such that the air A does not stagnate on the side of the surface 120a' and maintains a continuous flow of air.

Fig. 11 schematically illustrates a state in which the cooling fan 300' is placed on the substrate 100'. As illustrated in Figure 11, the cooling fan 300' is disposed on the surface 120a' of the support plate 120'. The cooling fan 300' can be fixed to the fixed portion 122'.

As illustrated in Fig. 12, the backflow prevention portion 500' may be disposed in an upper portion of the cooling fan 300'.

The outer casing 200' can be coupled to the coupling rim 110' of the substrate 100' to cover the support Board 120'. The outer casing 200' has an upwardly convex parabolic shape and may include a terminal portion 210' on the upper end of the outer casing 200' for connection with the socket, and an opening, located in the lower end of the outer casing 200', coupled to the substrate 100'. The outer casing 200' includes: a channel portion 220' forming a region recessed in a stepwise manner with respect to an outer surface of the outer casing 200' to guide introduction of air A from the outside; and an air introduction hole 230' to be guided via the channel portion 220' The introduced air A is introduced into the inner space of the outer casing 200'.

The air introduction hole 230' may be adjacent to the upper end of the outer casing 200' and may have an annular shape along the circumference of the outer casing 200'. The channel portion 220' can include a plurality of channels, and the channel portion 220' can be disposed in a manner such that at least one channel is recessed in the outer surface of the outer casing 200' to communicate with the air introduction hole 230', and from the outer casing The lower end of the 200' extends upward along the outer side of the outer casing 200 to communicate with the air introduction hole 230'.

The channel portion 220' may be continuously connected to the vent hole 113' coupled to the coupling rim 110' of the lower end of the outer casing 200' and may be exposed to the outside via the vent hole 113'. Therefore, the air A introduced from the outside can be guided to the coupling along a portion of the outer surface of the outer casing 200' (ie, the channel portion 220') from the lower portion of the coupling flange edge 110' through the vent hole 113'. The upper portion of the rim 110' can then be introduced into the interior space of the outer casing 200' via the air introduction aperture 230'. The exemplary embodiment illustrated in FIG. 8 differs from the exemplary embodiment of FIG. 1 in that the channel portion 220' of FIG. 8 can occupy a larger portion of the surface area of the outer casing 200'. This exemplary embodiment illustrates that the channel portion 220' can include multiple pairs of channels facing each other, but the number of channels of the channel portion 220' and their location of formation can be modified in a variety of ways.

The light source module 400' may be mounted on the other surface 120b' opposite to the surface 120a' of the support plate 120' on which the plurality of heat radiation fins 121' are disposed, and emits light. The light source module 400' can include a substrate 410' and at least one light emitting element 420' mounted on the substrate 410'.

The substrate 410' may be a general FR4 type printed circuit board (PCB), and may include an organic resin material containing an epoxy resin, a triazine, an anthracene, a polyimine or the like, and other organic resin materials. Alternatively, the substrate 410' may comprise a ceramic material (such as AIN, Al2O3, or the like) or a metal and metal compound material, and may be a metal core printed circuit board (MCPCB).

The substrate 410' may include a through hole 430' in its position corresponding to the air discharge hole 130' of the support plate 120'. The light emitting element 420' may be disposed along the circumference of the through hole 430'.

The light emitting element 420' can be mounted on the substrate 410'. The light emitting element 420' (ie, a semiconductor element that generates light of a predetermined wavelength due to external power applied to the light emitting element 420') may include a light emitting diode (LED). The light emitting element 420' may emit blue light, green light, or red light according to a material contained therein, and may emit white light.

The light emitting elements 420' may be disposed in a plurality of forms, and the plurality of light emitting elements 420' may be disposed on the substrate 410'. In this case, the plurality of light-emitting elements 420' can be configured in various ways, such as elements of the same type configured to produce light of the same wavelength or different types of elements that produce light of different wavelengths. Light-emitting element 420' can be an LED wafer or can be a single package containing LED wafers therein.

At the same time, the cover 600' covering the substrate 410' and the light-emitting element 420' can be mounted On the substrate 100'. The cover 600' may comprise a transparent or translucent material (eg, a resin such as tantalum, epoxy, or the like) to emit light from the light source module 400' and may also include glass.

The cover 600' may include a discharge duct 620' in its central portion, and the discharge duct 620' is connected to the through hole 430' of the substrate 410'. Therefore, the air A' present in the outer casing 200' can pass through the air discharge hole 130' of the support plate 120' and the through hole 430' of the substrate 410' to be discharged to the outside via the discharge pipe 620'.

13 and 14 schematically illustrate a state in which the light-emitting device 10' is mounted on the ceiling 1 according to the present exemplary embodiment. As illustrated, the illumination device 10' can be coupled to the ceiling 1 in a manner such that the coupling rim 110' is inserted into the aperture 2 of the ceiling 1. The aperture 2 of the ceiling 1 may be arranged to correspond to the coupling rim 110' and, therefore, a gap may not be created between the coupling rim 110' and the aperture 2.

When the cooling fan 300' disposed in the outer casing 200' is operated via electric power supplied to the cooling fan 300', the surrounding air A is introduced via a plurality of vent holes 113' provided in the flange portion 111', and is self-contained The lower end of the outer casing 200' is guided in the direction of its upper end along the channel portion 220' in the outer surface of the outer casing 200'. Further, the air A may be drawn into the inner space of the outer casing 200' via the air introduction hole 230' of the outer casing 200'. The air A sucked into the inner space of the outer casing 200' can be transferred to the support plate 120' of the base 100' via the cooling fan 300', and can pass through the gas discharge hole 130' of the support plate 120' and the through hole of the substrate 410'. 430', and can be discharged to the outside via the discharge duct 620'. In this case, the heated air A' on the support plate 120' can be forcibly sucked into the outer casing 200' and discharged together with the flow of air discharged to the outside. To the outside, the support plate 120' and the light source module 400' mounted on the support plate 120' are cooled.

Although the light emitting device 10' according to an exemplary embodiment is inserted and fixed such that no gap is generated between the hole 2 of the ceiling 1 and the coupling rim 110', the ambient air A may be disposed via the flange portion 111' The vent hole 113' is sucked in, and even when the illuminating device 10' is fastened to the airtight fixing unit 3 similar to the socket structure, the surrounding air A can pass through the channel portion 220' provided in the surface of the outer casing 200'. The space formed is forcibly introduced to cool the light-emitting device 10'.

A light emitting device according to another exemplary embodiment will be described with reference to FIGS. 15 and 21.

The components constituting the light-emitting device according to the exemplary embodiment illustrated in FIGS. 15 to 21 are substantially the same as or similar to the components of the light-emitting device of the exemplary embodiment illustrated in FIGS. 1 to 7 with respect to the basic configuration thereof. The difference lies in the structure of the light source. Therefore, the description of the same components as those of the foregoing exemplary embodiment will be omitted, and the configuration of the light source module will be mainly described.

As illustrated in FIGS. 15 and 16, the light emitting device 10" according to the present exemplary embodiment may include a substrate 100", a housing 200", a cooling fan 300", and a light source module 400".

The substrate 100" may include a coupling rim 110" and a support plate 120" disposed in an inner side of the coupling rim 110", and may further include a gas discharge hole 130", and the gas discharge hole 130" is formed as a support plate 120" A slit between the outer circumferential surface and the inner surface of the coupling rim 110".

The outer casing 200" can be disposed on one side of the substrate 100" and coupled to the coupling edge Side 110" to cover the support plate 120". The outer casing 200" includes: a channel portion 200" that forms a region recessed in a stepwise manner with respect to an outer surface of the outer casing 200" to guide introduction of air; and an air introduction hole 230" that guides air through the channel portion 220" Introduced to the interior of the outer casing 200".

The cooling fan 300" provided in the outer casing 200" forcibly sucks air into the inner space of the outer casing 200", and discharges the sucked air to the outside via the air discharge hole 130" provided in the base 100".

The substrate 100", the outer casing 200", and the cooling fan 300" are the same as the constituent members and structures of the light-emitting device 10 according to the exemplary embodiment of FIG. 1, and thus detailed description thereof will be omitted.

At the same time, the spacer 700" may be disposed on the cooling fan 300" to block the gap between the cooling fan 300" and the outer casing 200". The spacer 700" may have an annular shape in which a central hole 710" is formed, and an outer circumferential surface of the spacer 700" is in contact with an inner surface of the outer casing 200". The central aperture 710" may have a size and shape corresponding to the cooling fan 300". Therefore, the air sucked into the interior via the air introduction hole 230" of the outer casing 200" flows to the cooling fan 300" via the central hole 710" as a whole.

As shown in FIGS. 15 and 16, a power supply unit (PSU) 800" may be housed in the terminal portion 210" of the outer casing 200" to supply external power to the light source module 400". The power supply unit 800" may include: a driving circuit 810" including a capacitor or the like; and an electrode pin 820" connected to the driving circuit 810" and protruding outward from the terminal portion 210". The electrode pin 820" may be held by the pin The device 830" is fixed.

The power supply unit 800" may be disposed in a position higher than the air introduction hole 230" of the outer casing 200", and thus, the air sucked into the inner space of the outer casing 200" via the air introduction hole 230" is immediately passed through the cooling fan 300" Flow to the substrate 100". In this case, the heat generated by the power supply unit 800" can be radiated outward by the intake air A.

The light source module 400" is mounted in the support plate 120" and emits light via electric power, which is applied via the power supply unit 800". The light source module 400" according to the present exemplary embodiment may include: at least one light emission The element 420"; and the lens unit 440" are disposed on the light emitting element 420" and have a lens 450". The light source module 400" may further include a substrate 410", and the light emitting element 420" is mounted on the substrate 410".

The lens unit 440" may be disposed on the other side of the substrate 100" to cover the substrate 410" and the plurality of light emitting elements 420". The lens unit 440" can protect the light-emitting element 420 from the surrounding environment, or in order to improve the light extraction efficiency of the light emitted from the light-emitting element 420, the lens unit 440" can be made of a light-transmitting material. . For example, the light transmissive material may comprise polycarbonate (PC), polymethylmethacrylate (PMMA), acryl, and the like. As such, lens unit 440" may be made of a glass material in accordance with one or more exemplary embodiments.

FIG. 18 schematically illustrates a light source module 400", and FIG. 19 schematically illustrates a lens unit 440" of the light source module 400".

As illustrated in FIGS. 18 and 19, the lens unit 440" may have a first surface 440"-1 facing the light emitting element 420"; and a second surface 440"-2, and the first table The face 440"-1 is opposed. The lens unit 440" may include a plurality of lenses 450" that are disposed to oppose the light-emitting elements 420, respectively. A plurality of lenses 450" may be respectively disposed on the light-emitting elements 420" to adjust The area where the light generated by the light-emitting element 420" is emitted outward. The plurality of lenses 450" may be integrally connected to form a lens unit 440".

The lens 450" used in the present exemplary embodiment will be described in more detail with reference to FIGS. 20 and 21. As illustrated in FIGS. 20 and 21, the lens 450" may be disposed on the first surface 440"-1 and has: The central incident surface 451", light from the light-emitting element 420" is incident to the central incident surface 451"; and the reflective portion 452", protruding toward the light-emitting element 420 along the circumference of the central incident surface 451", and with respect to the central optical axis Z Rather, the lens 450" may have a refractive portion 455" disposed on the second surface 440"-2 and projecting in the opposite direction of the light-emitting element 420" and symmetric with respect to the optical axis Z.

The central incident surface 451" may be disposed immediately above the light-emitting element 420" such that it is perpendicular to the optical axis Z passing through the center, and may have a flat planar shape or a moderately curved shape as a whole. The central incident surface 451" may have a recessed portion 456" having a stepped structure. The recessed portion 456" may have a shape corresponding to an ejector pin as described below and in contact with the ejector pin.

The reflective portion 452" may have an annular shape along the circumference of the edge of the central incident surface 451" such that it surrounds the central incident surface 451" and may have a first reflective portion 452a" and a second reflective portion 452b", first The reflective portion 452a" and the second reflective portion 452b" are concentric and have different radii of rotation with respect to the optical axis Z. For example, the first reflective portion 452a" is a circle along the edge of the central incident surface 451" It is circumferentially disposed to cover the central incident surface 451", and the second reflective portion 452b" may be disposed along the circumference of the edge of the first reflective portion 452a" to cover the first reflective portion 452a". The first reflective portion 452a" and the second reflective portion 452b" may have an annular shape having different diameters with respect to the optical axis Z.

The first reflective portion 452a" and the second reflective portion 452b" may have a side incident surface 453", light from the light emitting element 420" is incident to the side incident surface 453", and a reflective surface 454" that reflects incident light to The second surface 440"-2.

The side incident surface 453" can receive light emitted in a lateral direction, the light being included in light from the light emitting element 420", and thus, the side incident surface 453" can be from the first surface 440"-1 toward the light emitting element 420 "Protrusions to extend a predetermined distance along the optical axis Z.

The reflective surface 454" reflects light received via the side incident surface 453" toward the second surface 440"-2, and thus, the reflective surface 454" can have an extended end connecting the side incident surface 453" and the first surface 440"-1 Parabolic shape.

In the present exemplary embodiment, the reflective surface 454" is illustrated as having a parabolic shape, but all exemplary embodiments are not limited thereto. For example, the reflective surface 454" may have a linearly inclined shape and may be freely modified to have a The shape is as long as it can reflect light received via the side incident surface 453" toward the second surface 440"-2.

Meanwhile, the reflecting portion 452" may have a structure in which the length of the protrusion from the first surface 440"-1 increases in a direction away from the optical axis Z. That is, the amount by which the second reflective portion 452b" protrudes toward the light emitting element 420" is larger than the first reflective portion 452a", and therefore, the size of the second reflective portion 452b" may be larger than the first overall Reflecting portion 452a".

In the present embodiment, the reflective portion 452" has a double loop structure including the first reflective portion 452a" and the second reflective portion 452b", but all of the exemplary embodiments are not limited thereto. For example, the reflective portion 452" may further include The third reflecting portion (not shown) and the third reflecting portion have a larger size and diameter than the second reflecting portion 452b", thereby having a three-ring structure or a three-ring or more structure.

The second surface 440"-2 opposite the first surface 440"-1 is a light output surface that emits light incident to the first surface 440"-1 to the outside. The second surface 440"-2 The refractive portion 455" is included, and the refractive portion 455" protrudes in a direction opposite to the light-emitting element 420" and is symmetrical with respect to the optical axis Z.

The refractive portion 455" may include a first refractive portion 455a" and a second refractive portion 455b" surrounding the first refractive portion 455a".

The first refractive portion 455a" may be disposed immediately above the light emitting element 420" and may have a convex curved surface that uses the optical axis Z as an apex. The second refractive portion 455b" forms a plurality of concentric circles with respect to the optical axis Z, and may have a convex-concave structure formed along the circumference of the first refractive portion 455a". For example, the convex and concave form of the second refractive portion 455b" may comprise a Fresnel pattern.

The refractive portion 455" can be formed by performing an intaglio process on the flat second surface 440"-2. That is, the curved surface of the first refractive portion 455a" and the convex-concave shape of the second refractive portion 455b" may be coplanar with at least the second surface 440"-2, or may be lower than the second surface 440"-2. Therefore, the refractive portion 455" may not protrude from the second surface 440"-2, and the height (or thickness) TL of the lens 450" It may be defined as the distance between the end of the reflective portion 452" protruding from the first surface 440"-1 and the second surface 440"-2.

In the present exemplary embodiment, the case where the refractive portion 455" is not protruded from the second surface 440"-2 is explained, but all the exemplary embodiments are not limited thereto. For example, the refractive portion 455" may partially protrude upward from the second surface 440"-2. However, the extent of the refracting portion 455" is only a portion of the total height (or thickness) TL relative to the lens 450" and, therefore, does not affect the height TL of the lens 450".

Meanwhile, the lens 450" may have a structure in which the reflective portion 452" is disposed outside the refractive portion 455" with respect to the optical axis Z to surround the refractive portion 455". In detail, the central incident surface 451" opposite to the refractive portion 455" formed on the second surface 440"-2 is formed to have a size corresponding to the refractive portion 455", and thus, the reflective portion 452" can be disposed in the refraction The outer portion of the portion 455" surrounds the refractive portion 455".

Figure 22 is a graph showing the light distribution curve of the lens 450". As illustrated, it can be seen that the concentrated light has a beam spread angle ranging from about 24 to 25 degrees. This means that the beam has a beam size of about 24.4. The prior art concentrating lens of the extended angle, the concentrating ability of the lens 450" does not have any significant difference.

The lens 450" can be integrally formed with the lens unit 440" by injecting a fluid solvent into the mold and allowing it to solidify. For example, it may include solutions such as injection molding, transfer molding, compression molding, and the like.

23A to 23C schematically illustrate a procedure of manufacturing a lens unit having a lens using a mold. 23A to 23C are diagrams schematically illustrating according to the present example A cross-sectional view of a sequential procedure for fabricating a lens unit of an embodiment.

First, as illustrated in FIG. 23A, molds M1 and M2 having a lens shape are prepared, and a fluid solvent (for example, a resin) is injected into the molds M1 and M2 and cured to complete the lens unit 440" having the lens 450".

Next, as illustrated in FIG. 23B, the molds M1 and M2 are separated to partially separate the completed lens unit 440" from the molds M1 and M2.

Next, as illustrated in FIG. 23C, the lens unit 440" is completely separated from the molds M1 and M2 via the ejector pins P provided in the molds M1 and M2. At least three or more ejector pins P may be provided, and further The deformation of the lens unit 440" during the process of separating the lens unit 440" can be minimized. For example, the ejector pin P can be configured to interact with the edge region of the lens 450" and the central region of the lens 450" The contacts are made such that the force applied to the lens 450" is evenly distributed. In this case, the ejector pin P disposed to be in contact with the central portion of the lens 450" may be in contact with the recessed portion 456 formed in the central incident surface 451" of the lens 450".

That is, in the case of the prior art concentrating lens, since the lens has a certain thickness (for example, about 10 mm), the ejector pin can be disposed outside the lens in the case of injection molding. However, in the case where the lens 450" has a small thickness (i.e., height) as in the present exemplary embodiment, the lens 450" may be deformed. Therefore, the ejector pin P is even disposed in the central portion to uniformly distribute the force applied to the lens 450" to prevent deformation of the lens unit 440".

The lens 450" according to the present exemplary embodiment thus manufactured may have a thickness (or height) ranging from about 2 mm to 4.5 mm, as illustrated in Fig. 20. That is, the root The lens 450" according to the present exemplary embodiment may have a thickness equal to about half of the thickness of the existing concentrating lens (thickness equal to about 10 mm, see FIG. 24A), thereby implementing a small size suitable for compactness, and when When the lens 450" according to the present exemplary embodiment is used in a light-emitting device, the light-emitting device may have a range falling within a range set by the American National Standards Institute (ANSI) (ANSI C78.24-2001). size of.

For example, the lamp standard specified by ANSI (ANSI C78.24-2001) requires that the lamp having the structure illustrated in Figure 16 follow a standard of maximum dimension T1: 46 mm, dimension T2: 4.5 mm, dimension TT: 50.5 mm. .

In high output lamps that are difficult to implement adequate cooling with natural thermal radiation (or heat dissipation) schemes (such as the current 50 watt MR 16 product), the use of a cooling fan is necessary. In this case, due to the installation of the cooling fan, the size of the product is increased to exceed the ANSI standard.

In the case of an outer casing of a size limited to T1, the outer casing has a standardized structure for fastening to a socket and the like. Thus, in the present exemplary embodiment, the thickness of the lens limited to size T2 is reduced to avoid exceeding the ANSI standard. 24A and 24B show a comparison between a general concentrating lens and a thin and light lens according to the present exemplary embodiment. As can be seen from the figures, lamps conforming to the ANSI standard can be implemented which reduce the height (or thickness) by about half while maintaining the same optical characteristics.

Meanwhile, the substrate 410" corresponds to a base member constituting a circuit board (on which the light-emitting element 420 as an electronic component is to be mounted), and the substrate 410" may be a so-called printed circuit board (PCB). 410" can be used as a base member The package body of the light-emitting element 420".

The substrate 410" may be made of, for example, a material such as FR-4, CEM-3, or the like, but all of the exemplary embodiments are not limited thereto. For example, the substrate 410" may also be made of a glass or epoxy material, Made of ceramic material or the like. Also, the substrate 410" may be made of a metal or a metal compound, or may include a metal core printed circuit board (MCPCB), a metal copper clad laminate (MCCL), or the like.

Fig. 17 schematically illustrates a state in which the light-emitting element 10" is mounted on the ceiling 1 according to the present exemplary embodiment. The fixing unit 3 may be mounted on the ceiling 1 to fasten or fix the light-emitting device 10", and power may be supplied to the light-emitting The device 10". The light-emitting device 10" can be fixed to the upper portion of the ceiling 1 in an airtight state by the fixing unit 3.

As illustrated, the lighting device 10" can be fastened to the ceiling 1 such that the coupling rim 110" is inserted into the aperture 2 of the ceiling 1. The hole 2 of the ceiling 1 may be disposed to correspond to the coupling rim 110", and thus, the gap may not be generated at the coupling rim 110 except for the space corresponding to the groove 112" of the coupling rim 110"" Between the hole 2.

When the cooling fan 300" disposed in the outer casing 200" is operated via electric power supplied to the cooling fan 300", the air A passes through the groove 112" (ie, the space provided between the coupling rim 110" and the ceiling 1 And introduced from the outside, and the introduced air A can be guided along the channel portion 220" in the outer surface of the outer casing 200" in the direction from the lower end to the upper end of the outer casing 200". Further, the air A may be drawn into the inner space of the outer casing 200" via the air introduction hole 230" of the outer casing 200". The air A sucked into the inner space of the outer casing 200" may pass through the spacer 700" and the cooling fan 300" The support plate 120" flowing to the substrate 100" is radially dispersed to the edge of the support plate 120" along the heat radiation fins 121" provided on the support plate 120", and is discharged to the outside via the air discharge holes 130" . In this case, the heated air A' on the support plate 120" can be forcibly sucked into the outer casing 200" and discharged to the outside together with the flow of the air A discharged to the outside, thereby supporting the plate 120" and The light source module 400" mounted on the support plate 120" may be cooled. Further, the inside of the outer casing 200" may be cooled by air A continuously sucked into the outer casing 20 and having a relatively low temperature. In particular, the light-emitting device 10" according to the present exemplary embodiment may include the channel portion 220" in the outer surface of the outer casing 200" in order to achieve the flow of the air A. Therefore, even when the light-emitting device 10" is mounted on the cover housing 200" In the case of the airtight fixing unit 3 (for example, a socket structure having a shape corresponding to the shape of the outer casing and closely attached to the outer surface of the outer casing), the air A introduced from the outside may be formed via the passage portion 220" The space is drawn into the outer casing 200". As described above, air A introduced from the outside and having a relatively low temperature can be forcibly sucked in to cool the light-emitting device 10", thereby maximizing heat radiation efficiency, and thus, can be extended The light source module 400" has a long life and can enhance luminous efficiency.

Hereinafter, various substrate structures that can be used in a light source module according to various exemplary embodiments as described above will be described.

As illustrated in FIG. 25, the board 1100 may include: an insulating substrate 1110 having predetermined circuit patterns 1111 and 1112 formed on one surface thereof; and an upper heat diffusion plate 1140 formed on the insulating substrate 1110 such that the upper heat diffusion plate 1140 Contacting the circuit patterns 1111 and 1112 and dissipating heat generated by the light emitting element 420; The lower heat diffusion plate 1160 is formed on the other surface of the insulating substrate 1110 and diffuses heat transferred from the upper heat diffusion plate 1140. The upper heat diffusion plate 1140 and the lower heat diffusion plate 1160 may be connected by at least one through hole 1150 penetrating the insulating substrate 1110 and having a plated inner wall.

The circuit patterns 1111 and 1112 of the insulating substrate 1110 can be formed by coating a copper foil on a ceramic or epoxy resin-based FR4 core and performing an etching process on the resultant structure. The insulating film 1130 may be coated on the lower surface of the board 1100.

Figure 26 illustrates another example of a board. As illustrated in FIG. 26, the board 1200 may include an insulating layer 1220 formed on the first metal layer 1210, and a second metal layer 1230 formed on the insulating layer 1220. The substrate 1200 may have a stepped portion "R" formed in at least one end portion of the substrate and exposing the insulating layer 1220.

The first metal layer 1210 may be made of a material having excellent heat release characteristics. For example, the first metal layer 1210 may be made of a metal or alloy such as aluminum (Al), iron (Fe), or the like, and may be formed in a single layer or a multilayer structure. The insulating layer 1220 may be made of a material having insulating properties and may be formed of an inorganic or organic material. For example, the insulating layer 1220 may be made of an epoxy-based insulating resin, and in order to enhance thermal conductivity, the insulating layer 1220 may contain a metal powder such as aluminum (Al) powder or the like for use. The second metal layer 1230 may be formed substantially as a copper (Cu) film.

As illustrated in FIG. 26, in the metal plate, a distal end portion of the insulating layer 1220 The distance of the exposed regions of the minute (i.e., the insulation distance) may be greater than the thickness of the insulating layer 1220. In the present disclosure, the insulating distance refers to the distance of the exposed region of the insulating layer 1220 between the first metal layer 1210 and the second metal layer 1230. When overlooking the metal plate, the width of the exposed region of the insulating layer 1220 is referred to as the exposed width W1. The area "R" in Fig. 26 is an area which is removed by a grinding process or the like during the process of manufacturing the metal plate. The end portion of the metal plate may have a depth "h" corresponding to a distance from the surface of the second metal layer 1230 to the insulating layer 1220 (wherein the insulating layer 1220 is exposed to the exposed width W1), thereby forming a stepped structure. If the end portion of the metal plate is not removed, the insulation distance corresponds to the thickness (h1 + h2) of the insulating layer 1220, and by removing a portion of the end portion, the insulation distance substantially corresponding to the distance W1 can be further ensured. Therefore, in the case where the metal plate is subjected to the withstand voltage test, a metal plate having a structure in which the possibility of contact between the two metal layers 1210 and 1230 in the end portion thereof is reduced to least.

Fig. 27 schematically illustrates the structure of a metal plate according to the modification of Fig. 26. Referring to FIG. 27, the metal plate 1200' may include an insulating layer 1220' formed on the first metal layer 1210', and a second metal layer 1230' formed on the insulating layer 1220'. The insulating layer 1220' and the second metal layer 1230' include regions that are removed at a predetermined oblique angle δ1, and even the first metal layer 1210' may also include regions that are removed at a predetermined oblique angle δ1.

Here, the oblique angle δ1 may be an angle between the interface between the insulating layer 1220' and the second metal layer 1230' and the end portion of the insulating layer 1220', and may be selected to take into consideration the thickness of the insulating layer 1220'. In the case of the insulation distance I is ensured. The bevel angle δ1 can be selected to be in the range of 0 < δ1 < 90 (degrees). As the angle of inclination δ1 increases, the insulating layer 1220' The insulation distance I and the width W2 of the exposed area increase. Therefore, in order to ensure a large insulation distance, the inclination angle δ1 can be selected to be small. For example, the bevel angle δ1 can be selected to be in the range of 0 < δ1 < 45 (degrees).

Figure 28 schematically illustrates another example of a board. Referring to FIG. 28, the board 1300 is formed by laminating a resin coated copper (RCC) film 1320 (which includes an insulating layer 1321 and a copper foil 1322 laminated on the insulating layer 1321) on the metal supporting substrate 1310. Formed, and a portion of the RCC film 1320 can be removed to form at least one recess in which the light emitting element 420 is mounted. In the metal plate, since the RCC film 1320 is removed from the lower region of the light-emitting element 420, the light-emitting element 420 is in direct contact with the metal support plate 1310, and heat generated by the light-emitting element 420 is directly transmitted to the metal support plate 1310, thereby enhancing light emission. Thermal radiation (or heat dissipation) performance of element 420. The light emitting element 420 can be electrically connected or fixed via soldering (solder 1340 and 1341). A protective layer 1330 made of a liquefied PSR may be formed on the copper foil piece 1322.

Figure 29 schematically illustrates another example of a board. In this embodiment, the plate contains an anodized metal plate which has excellent heat dissipation characteristics and results in low manufacturing cost. Referring to FIG. 29, the anodized metal plate 1400 may include: a metal plate 1410; an anodized film 1420 formed on the metal plate 1410; and a metal wiring 1430 formed on the anodized film 1420.

The metal plate 1410 can be made of aluminum (Al) or aluminum alloy which can be easily obtained at a relatively low cost. Further, the metal plate 1410 can be made of any other anodizable metal (eg, titanium, magnesium, or the like).

The aluminum anodized film (Al2O3) 1420 obtained by anodizing aluminum has a relatively high heat transfer characteristic and ranges from about 10 to 30 watts/meter Kelvin (W/mK). Therefore, the anodized metal plate has excellent heat dissipation characteristics with respect to a printed circuit board (PCB), a metal core printed circuit board (MCPCB) or the like of a conventional polymer board.

Figure 30 schematically illustrates another example of a board. As illustrated in FIG. 30, the board 1500 may include an insulating resin 1520 coated on the metal substrate 1510, and a circuit pattern 1530 formed on the insulating resin 1520. Here, the insulating resin 1520 may have a thickness equal to or smaller than 200 μm. The insulating resin 1520 may be laminated as a solid film on the metal substrate 1510 or may be applied as a liquid according to a casting method using spin coating or a doctor blade. Likewise, the circuit pattern 1530 can be formed by filling a design of a circuit pattern of intaglio printing on the insulating resin 1520 with a metal such as copper (Cu) or the like. Light emitting element 420 can be mounted to connect to circuit pattern 1530.

At the same time, the board may comprise a freely deformable flexible printed circuit board (FPCB). As illustrated in FIG. 31, the board 1600 can include: an FPCB 1610 having one or more vias 1611; and a support substrate 1620 mounted on the support substrate 1620. The heat dissipating adhesive 1640 coupled to the lower surface of the light emitting element 420 and the upper surface of the support substrate 1620 may be disposed in the through hole 1611. Here, the lower surface of the light emitting element 420 may be a lower surface of the wafer package, a lower surface of the lead frame on which the wafer is mounted, or a metal block. The FPCB 1610 includes metal wiring 1630, and thus the FPCB 1610 can be electrically connected to the light emitting element 420.

In this way, by using the FPCB 1610, the thickness and weight can be reduced, And the manufacturing cost can be reduced. Likewise, since the light-emitting element 420 is directly bonded to the support substrate 1620 by the heat dissipating adhesive 1640, thereby enhancing heat dissipation efficiency, heat generated by the light-emitting element 420 can be easily radiated.

The aforementioned plate may be formed to have a flat plate shape. However, the size and structure of the board may be modified in various ways according to the structure of a device (for example, a light-emitting device) that will use the light source module according to the present exemplary embodiment.

The light emitting element can be mounted on the board and electrically connected to the board. Any of the photovoltaic elements can be used as the light-emitting element 420 as long as the light-emitting element can generate light of a predetermined wavelength by electric power applied from the outside to the photovoltaic element, and generally, the light-emitting element 420 can include a semiconductor layer epitaxial growth growth A semiconductor light emitting diode (LED) on a substrate. The light-emitting element 420 can emit blue light, green light, or red light according to the material contained therein, and can also emit white light.

For example, the light emitting element 420 may have a laminated structure including an n-type semiconductor layer and a p-type semiconductor layer and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer. Similarly, here, the active layer may consist of a single quantum well or a multiple quantum well structure containing InxAlyGa1-x-yN (0 x 1,0 y 1,0 x+y 1) A nitride semiconductor is formed.

Meanwhile, the light-emitting elements usable in the light-emitting device according to the foregoing embodiments may use LED chips having various structures or various types of LED packages including such LED chips. Hereinafter, various LED chips and LED packages that can be used in the light emitting device according to the foregoing embodiments will be described.

<Lighting element - first example>

32 is a side cross-sectional view schematically illustrating an example of a light-emitting element as a light-emitting diode (LED) wafer.

As illustrated in FIG. 32, the light emitting element 2000 may include a light emitting laminate L formed on the substrate 2001. The light emitting laminate L may include a first conductive type semiconductor layer 2004, an active layer 2005, and a second conductive type semiconductor layer 2006.

Likewise, the ohmic contact layer 2008 may be formed on the second conductive type semiconductor layer 2006, and the first electrode 2009a and the second electrode 2009b may be formed on the upper surfaces of the first conductive type semiconductor layer 2004 and the ohmic contact layer 2008, respectively.

In the present disclosure, terms such as "upper portion", "upper surface", "lower portion", "lower surface", "side surface" and the like are determined based on the drawings, and in practice, the terms are used. It can be changed depending on the direction in which the light-emitting elements are placed.

Hereinafter, the main components of the light-emitting element will be described in detail.

[substrate]

The substrate constituting the light-emitting element is a growth substrate for epitaxial growth. As the substrate 2001, an insulating substrate, a conductive substrate, or a semiconductor substrate can be used. For example, the substrate 2001 may be made of sapphire, SiC, Si, MgAl 2 O 4 , MgO, LiAlO 2 , Li Ga O 2 , GaN, or the like. In order to epitaxially grow a GaN material, a GaN substrate as a homogenous substrate can be used, but a GaN substrate can cause high manufacturing cost due to difficulty in manufacturing.

As the heterogeneous substrate, a sapphire substrate, a tantalum carbide substrate or the like is generally used, and in this case, the sapphire substrate is used more frequently than the relatively expensive tantalum carbide substrate. In the case of using a heterogeneous substrate, due to the substrate material and thin Differences in lattice constants between film materials, defects such as misalignment or the like may increase. Also, due to the difference between the coefficients of thermal expansion between the substrate material and the film material, warping may occur under conditions of temperature change, resulting in cracking of the film. This can be reduced by using the buffer layer 2002 formed between the substrate 2001 and the GaN-based light-emitting laminate L.

To enhance the optical or electrical properties of the LED wafer before or after the growth of the LED structure, the substrate 2001 can be completely or partially removed or patterned during the wafer fabrication process.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating a laser to the interface between the sapphire substrate and the semiconductor layer via the substrate, and in the case of a germanium substrate or a tantalum carbide substrate, according to, for example, polishing / Etching or the like to remove the substrate.

Similarly, different support substrates may be used in the process of removing the substrate, and in this case, the support substrate may be attached to the opposite side of the original growth substrate by using a refractive metal, or the refractive structure may be inserted into the bonding layer. The middle portion is used to enhance the light efficiency of the LED wafer.

In the case of substrate patterning, the recess and the protrusion (or uneven portion) or the inclined portion are formed on or on the main surface (one surface or both surfaces) of the substrate before or after the growth of the LED structure. Therefore, the light extraction efficiency is enhanced.

The reference substrate is patterned, and an uneven surface or an inclined surface may be formed on the main surface (one surface or both surfaces) of the substrate or on the side surface to enhance light extraction effectiveness. The size of the pattern may be selected from the range of 5 nm to 500 μm, and any pattern may be used as long as the pattern can enhance light extraction efficiency as a regular pattern or an irregular pattern. The pattern may have various shapes such as a columnar shape, a peak shape, a hemispherical shape, a polygonal shape, and the like.

In the case of a sapphire substrate, the sapphire is a Hexa-Rhombo R3c symmetrical crystal whose lattice constants in the c-axis direction and the a-axis direction are about 13.001 Egypt, 4.758 angstroms, respectively, and have a C-plane (0001). ), A plane (1120) and R plane (1102) and the like. In this case, the nitride film can be relatively easily grown on the C-plane of the sapphire crystal, and since the sapphire crystal is stable at a high temperature, the sapphire substrate is generally used as a nitride growth substrate.

A bismuth (Si) substrate can also be used. Since the bismuth (Si) substrate is more suitable for increasing the diameter and the price is relatively low, the bismuth (Si) substrate can be used to promote mass production. The Si substrate having the (111) plane as the substrate plane differs by 17% from the lattice constant of GaN. Therefore, a technique for suppressing generation of crystal defects due to a difference between lattice constants is required. Similarly, the difference between the thermal expansion coefficients of germanium and GaN is about 56%, and therefore, a technique for suppressing warpage of the wafer due to the difference between the thermal expansion constants is required. Warped wafers may cause cracks in the GaN film and make it difficult to control the process, resulting in an increase in the distribution of light emission wavelengths in the same wafer or the like.

The bismuth (Si) substrate absorbs light generated in the GaN-based semiconductor to reduce the external quantum efficiency of the light-emitting element. Therefore, the substrate can be removed, and a support substrate (Si, Ge, SiAl, ceramic, or metal substrate including the refractive layer or its Similar to) to use.

【The buffer layer】

When a GaN thin film is grown on a hetero-substrate similar to a Si substrate, the dislocation density may increase due to a lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage may be due to a difference between thermal expansion coefficients. produce.

In this case, in order to prevent misalignment and cracking of the light-emitting laminate L, the buffer layer 2002 may be disposed between the substrate 2001 and the light-emitting laminate L. The buffer layer 2002 can be used to adjust the degree of warpage of the substrate during growth of the active layer to reduce the wavelength distribution of the wafer.

The buffer layer can be made of AlxInyGa1-x-yN (0 x 1,0 y 1,0 x+y 1) Made, in particular, made of GaN, AlN, AlGaN, InGaN or InGaN AlN, and materials such as ZrB2, HfB2, ZrN, HfN, TiN or the like can also be used. Likewise, the buffer layer can be formed by combining a plurality of layers or by gradually changing the composition.

The tantalum substrate has a significant difference in thermal expansion coefficient with respect to GaN. Therefore, in order to grow a GaN-based thin film on a germanium substrate, when a GaN thin film is grown at a high temperature and cooled at room temperature, tensile stress is applied to the GaN thin film due to a difference between thermal expansion coefficients of the substrate and the thin film, thereby generating crack. In order to prevent the generation of cracks, the tensile stress is compensated by using a method of growing a film to apply a compressive stress to the film being grown.

The difference between the lattice constants of germanium (Si) and GaN increases the likelihood of defects occurring in the germanium substrate. Therefore, in the case of using a crucible substrate, the appliance can be made A buffer layer having a composite structure is used to control stress for restraining warpage and controlling defects.

For example, first, an AlN layer is formed on the substrate 2001. In this case, a material not containing gallium (Ga) may be used in order to prevent a reaction between germanium (Si) and gallium (Ga). In addition to AlN, materials such as SiC or the like can also be used. The AlN layer is grown at a temperature ranging from 400 ° C to 1,300 ° C by using an aluminum (Al) source and a nitrogen (N) source. An AlGaN intermediate layer may be inserted in the middle of GaN between the plurality of AlN layers to control stress.

[Light Emitting Laminate]

The light-emitting laminate L having a multilayer structure of a group III nitride semiconductor will be described in detail. The first conductive type semiconductor layer 2004 and the second conductive type semiconductor layer 2006 may be formed of a semiconductor doped with n-type and p-type impurities, respectively.

However, all of the exemplary embodiments are not limited thereto, and conversely, the first conductive type semiconductor layer 2004 and the second conductive type semiconductor layer 2006 may be formed of a p-type and n-type impurity doped semiconductor. For example, the first conductive type semiconductor layer 2004 and the second conductive type semiconductor layer 2006 may be a group III nitride semiconductor (for example, composed of AlxInyGa1-x-yN (0) x 1,0 y 1,0 x+y 1) The material) is made. Of course, the exemplary embodiment is not limited thereto, and the first conductive type semiconductor layer 2004 and the second conductive type semiconductor layer 2006 may also be made of a material such as an AlGaInP-based semiconductor or an AlGaAs-based semiconductor.

Meanwhile, the first conductive type semiconductor layer 2004 and the second conductive type semiconductor layer 2006 may have a single layer structure, or the first conductive type semiconductor layer 2004 and the second conductive type semiconductor layer 2006 may have a multilayer structure, and the multilayer structure package Contains layers having different compositions, thicknesses, and the like. For example, the first conductive type semiconductor layer 2004 and the second conductive type semiconductor layer 2006 may have a carrier injection layer for improving electron and hole injection efficiency, or may have various types of superlattice structures, respectively.

The first conductive type semiconductor layer 2004 may further include a current diffusion layer in a region adjacent to the active layer 2005. The current diffusion layer may have a structure in which a plurality of InxAlyGa(1-x-y)N layers of different compositions or different impurity concentrations are successively laminated or may have a layer of insulating material partially formed therein.

The second conductive type semiconductor layer 2006 may further include an electron blocking layer in a region adjacent to the active layer 2005. The electron blocking layer may have a plurality of InxAlyGa(1-x-y)N layer laminated structures of different compositions or may have one or more layers comprising AlyGa(1-y)N. The electron blocking layer has a band gap wider than that of the active layer 2005, thus preventing electrons from being transferred on the second conductivity type (p type) semiconductor layer.

The light-emitting laminate L can be formed by using metal-organic chemical vapor deposition (MOCVD). In order to manufacture the light-emitting laminate L, an organometallic compound gas (for example, trimethyl gallium (TMG), trimethyl aluminum (TMA)) and a nitrogen-containing gas (ammonic (NH3)) are used. Or a reaction gas is supplied as a reaction gas to a reaction vessel in which the substrate 2001 is mounted, the substrate is maintained at a high temperature ranging from 900 ° C to 1,100 ° C, and an impurity gas is supplied as a layer while growing the gallium nitride-based compound semiconductor A gallium nitride-based compound semiconductor which is an undoped n-type or p-type semiconductor is pressed.矽 (Si) is a well-known n-type impurity, and the p-type impurity contains zinc (Zn), cadmium (Cd), bismuth (Be), magnesium (Mg), calcium (Ca), barium (Ba) and the like. Among them, magnesium (Mg) and zinc (Zn) can be mainly used.

Similarly, the active layer 2005 disposed between the first conductive type semiconductor layer 2004 and the second conductive type semiconductor layer 2006 may have a multi-quantum (MQW) structure in which a quantum well layer and a quantum barrier layer are alternated. laminated. For example, in the case of a nitride semiconductor, a GaN/InGaN structure may be used, or a single quantum well (SQW) structure may also be used.

[Ohm contact layer and first electrode and second electrode]

The ohmic contact layer 2008 may have a relatively high impurity concentration to have a low ohmic contact resistance, thereby reducing the operating voltage of the component and enhancing component characteristics. The ohmic contact layer 2008 may be formed of a GaN layer, an InGaN layer, a ZnO layer, or a graphene layer.

The first electrode 2009a or the second electrode 2009b may be made of, for example, silver (Ag), nickel (Ni), aluminum (Al), rhodium (Rh), palladium (Pd), iridium (Ir), ruthenium (Ru), magnesium (Mg). Made of zinc (Zn), platinum (Pt), gold (Au) or the like, and may have materials such as Ni/Ag, Zn/Ag, Ni/Al, Zn/Al, Pd/Ag, Pd Two or more layers of structures of /Al, Ir/Ag, Ir/Au, Pt/Ag, Pt/Al, Ni/Ag/Pt or the like.

The LED chip illustrated in FIG. 32 has a structure in which the first electrode 2009a and the second electrode 2009b face the same surface as the light extraction surface, but the LED wafer can also be implemented to have various other structures such as the first electrode and the second electrode surface. a flip-chip structure of a surface opposite to the light extraction surface, a vertical structure in which the first electrode and the second electrode are formed on mutually opposing surfaces, by forming a plurality of perforations in the wafer The vertical and horizontal structure of the electrode structure and the like are used for the structure which enhances the current spreading efficiency and the heat dissipation efficiency.

<Second example of light-emitting element>

In the case of manufacturing a large-sized light-emitting element having a high output, the LED wafer described in FIG. 33 which promotes current spreading efficiency and heat dissipation efficiency can be provided.

As illustrated in FIG. 33, the LED wafer 2100 may include a first conductive type semiconductor layer 2104, an active layer 2105, a second conductive type semiconductor layer 2106, a second electrode layer 2107, an insulating layer 2102, and a first electrode layer which are sequentially laminated. 2108 and substrate 2101. Here, in order to be electrically connected to the first conductive type semiconductor layer 2104, the first electrode layer 2108 includes one or more contact holes H extending from one surface of the first electrode layer 2108 to the first conductive type semiconductor layer At least a portion of the region 2104 is electrically insulated from the second conductive type semiconductor layer 2106 and the active layer 2105. However, the first electrode layer 2108 is not an essential component in the present embodiment.

The contact hole H extends from the interface of the first electrode layer 2108, passes through the second electrode layer 2107, the second conductive type semiconductor layer 2106, and the active layer 2105, up to the inside of the first conductive type semiconductor layer 2104. The contact hole H extends to at least an interface between the active layer 2105 and the first conductive type semiconductor layer 2104, and may extend to a portion of the first conductive type semiconductor layer 2104. However, the contact hole H is formed for electrical connectivity and current spreading, and therefore, when the contact hole H is in contact with the first conductive type semiconductor layer 2104, the purpose of the contact hole H can be achieved. Therefore, it is not necessary for the contact hole H to extend to the outer surface of the first conductive type semiconductor layer 2104.

Considering the light reflection function and the ohmic contact function and the second conductivity type semi-conductive The bulk layer 2106, the second electrode layer 2107 formed on the second conductive type semiconductor layer 2106 may be selected from the group consisting of silver (Ag), nickel (Ni), aluminum (Al), rhodium (Rh), palladium (Pd), and iridium (Ir). Made of ruthenium (Ru), magnesium (Mg), zinc (Zn), platinum (Pt), gold (Au) and the like and can be processed by using processes such as sputtering, deposition or the like form.

The contact hole H may have a form penetrating the second electrode layer 2107, the second conductive type semiconductor layer 2106, and the active layer 2105 so as to be connected to the first conductive type semiconductor layer 2104. The contact hole H can be formed through an etching process (for example, inductively coupled plasma-reactive ion etching (ICP-RIE)) or the like.

The insulating layer 2102 is formed to cover the sidewall of the contact hole H and the surface of the second conductive type semiconductor layer 2106. In this case, at least a portion of the first conductive type semiconductor layer 2104 corresponding to the bottom of the contact hole H may be exposed. The insulating layer 2102 can be formed by depositing an insulating material such as SiO2, SiOxNy, or SixNy. The insulating layer 2102 may be deposited to have a thickness ranging from about 0.01 micrometers to 3 micrometers at a temperature equal to or lower than 500 ° C via a chemical vapor deposition (CVD) process.

A first electrode layer 2108 including conductive vias formed by filling a conductive material is formed in the contact hole H. A plurality of conductive vias may be formed in a single light emitting element region. The amount of perforations and their contact areas may be adjusted such that the area occupied by the plurality of perforations in the plane of the region in contact with the second conductive type semiconductor layer 2104 ranges from 1% to 5% of the area of the light emitting element region. Perforated and first conductivity type semiconductor The radius of the perforations in the plane of the region in contact with the layer 2104 may range, for example, from 5 micrometers to 50 micrometers, and the number of perforations may be from 1 to 50 per light-emitting element region depending on the width of the light-emitting region. Although different depending on the width of the light-emitting element region, three or more perforations may be provided. The distance between the perforations can range from 100 microns to 500 microns, and the perforations can have a matrix structure comprising columns and rows. Further, the distance between the perforations may range from 150 microns to 450 microns. If the distance between the perforations is less than 100 micrometers, the amount of perforations can be relatively increased to reduce the luminous area, and the luminous efficiency is lowered, and if the distance between the perforations is greater than 500 micrometers, it may be difficult to disperse current and degrade the luminous efficiency. The depth of the contact hole H may range from 0.5 μm to 5.0 μm, but the depth of the contact hole H may vary depending on the thickness of the second conductive type semiconductor layer and the active layer.

Subsequently, a substrate 2101 is formed under the first electrode layer 2108. In this configuration, the substrate 2101 can be electrically connected to the first conductive type semiconductor layer 2104 by conductive vias.

The substrate 2101 may be made of a material including any of Au, Ni, Al, Cu, W, Si, Se, GaAs, SiAl, Ge, SiC, AlN, Al 2 O 3 , GaN, and AlGaN, and may be, for example, plated or splashed. Formed by plating, deposition, bonding, or the like. However, all embodiments are not limited thereto.

In order to reduce the contact resistance, the amount, shape, pitch, contact area with the first conductive type semiconductor layer 2104 and the second conductive type semiconductor layer 2106, and the like can be appropriately adjusted. The contact holes H may be arranged in columns and rows to have various shapes to improve current flow. Here, the second electrode layer 2107 can be in the second electricity One or more exposed regions (ie, exposed regions E) are present in the interface between the pole layer 2017 and the second conductive type semiconductor layer 2106. An electrode pad unit 2109 that connects an external power source to the second electrode layer 2107 may be disposed on the exposed region E.

In this manner, the LED wafer 2100 illustrated in FIG. 33 may include a light emitting structure having first and second major surfaces opposite to each other and having a first surface providing a first major surface and a second major surface, respectively. Conductive type semiconductor layer 2104 and second conductive type semiconductor layer 2106, and active layer 2105 between first conductive type semiconductor layer 2104 and second conductive type semiconductor layer 2106, contact hole H is connected from second main surface via active layer 2105 To a region of the first conductive type semiconductor layer 2104, the first electrode layer 2108 is formed on the second main surface of the light emitting structure and connected to the region of the first conductive type semiconductor layer 2104 via the contact hole H, and the second electrode layer 2107 It is formed on the second main surface of the light emitting structure and is connected to the second conductive type semiconductor layer 2106. Here, any of the first electrode 2108 and the second electrode 2107 may be drawn in the lateral direction of the light emitting structure.

<Light-emitting element - third example>

The LED light-emitting element provides improved heat dissipation characteristics, and an LED chip having a low heat value is preferably used for the light-emitting element in terms of total heat dissipation efficiency. As the LED wafer that satisfies such requirements, an LED chip (hereinafter, referred to as "nano LED wafer") containing a nanostructure therein can be used.

Such a nano LED chip comprises a recently developed core/shell type nano-LED chip having a low adhesion density to generate a relatively low heat and increased by utilizing a nanostructure. Large illuminating area The high luminous efficiency prevents degradation of efficiency due to polarization by obtaining a non-polarized active layer, thus improving the falling characteristic such that the luminous efficiency decreases as the amount of injected current increases.

Figure 34 illustrates a nano LED wafer as another example of an LED wafer that can be used in the foregoing light-emitting element.

As illustrated in FIG. 34, the nano LED wafer 2200 includes a plurality of nano-light emitting structures N formed on the substrate 2201. In this example, it is explained that the nano-light-emitting structure N has a core-shell structure as a rod-like structure, but the exemplary embodiment is not limited thereto, and the nano-light-emitting structure N may have a different structure such as a pyramid structure. .

The nano LED wafer 2200 includes a base layer 2202 formed on the substrate 2201. The base layer 2202 is a layer that provides a growth surface of the nano-light-emitting structure N, which may be a first conductivity type semiconductor. A photomask layer 2203 having an open region for growth of the nanoluminescent structure N (specifically, the core) may be formed on the base layer 2202. The mask layer 2203 may be made of a dielectric material such as SiO2 or SiNx.

In the nano-light emitting structure N, the first conductive type nano core 2204 is formed by selectively growing the first conductive type semiconductor using the photomask layer 2203 having an open region, and the active layer 2205 and the second conductive type The semiconductor layer 2206 is formed as a cap layer on the surface of the nano core 2204. Therefore, the nano-light emitting structure N may have a core-shell structure in which the first conductive type semiconductor is a nano core, and the active layer 2205 and the second conductive type semiconductor layer 2206 surrounding the nano core are outer shell layers.

The nano LED wafer 2200 includes a filler material 2207 that fills a space between the nano-light emitting structures N. A filler material 2207 can be used to structurally stabilize the nanoluminescent structure N and optically modify the nanoluminescent structure N. The filler material 2207 may be made of a transparent material such as SiO2, but all exemplary embodiments are not limited thereto. The ohmic contact layer 2208 may be formed on the nano-light emitting structure N and connected to the second conductive type semiconductor layer 2206. The nano LED wafer 2200 includes a base layer 2202 formed of a semiconductor of a first conductivity type, and a first electrode 2209a and a second electrode 2209b connected to the base layer 2202 and the ohmic contact layer 1608, respectively.

By forming the nanoluminescent structure N such that it has different diameters, components, and doping densities, two or more different wavelengths of light can be emitted from a single component. By appropriately adjusting light having different wavelengths, white light can be implemented in a single component without using a phosphor, and can be implemented by combining different LED wafers to the aforementioned components or a combination of wavelength converting materials such as phosphors. Light with various colors or white light with different color temperatures.

<Lighting element-fourth example>

FIG. 35 illustrates a semiconductor light emitting element 2300 having an LED wafer 2310 mounted on a mounting substrate 2320 as a light source usable in the above-described light emitting element.

The semiconductor light emitting element 2300 illustrated in FIG. 35 includes an LED wafer 2310. The LED wafer 2310 is presented as an LED wafer of a different form than the above examples.

The LED chip 2310 includes: a light emitting laminate L disposed on one surface of the substrate 2301; and a first electrode 2308a and a second electrode 2308b based on light emission The laminate L is placed on the opposite side of the substrate 2301. Moreover, the LED chip 2310 includes an insulating layer 2303 covering the first electrode 2308a and the second electrode 2308b.

The first electrode 2308a and the second electrode 2308b may include a first electrode pad 2319a and a second electrode pad 2319b. The first electrode pad 2319a and the second electrode pad 2319b are electrically connected by the electrical connection units 2309a and 2309b. To the first electrode 2308a and the second electrode 2308b.

The light emitting laminate L may include a first conductive type semiconductor layer 2304, an active layer 2305, and a second conductive type semiconductor layer 2306 which are sequentially disposed on the substrate 2301. The first electrode 2308a may be disposed to be connected to the conductive via of the first conductive type semiconductor layer 2304 via the second conductive type semiconductor layer 2306 and the active layer 2305. The second electrode 2308b may be connected to the second conductive type semiconductor layer 2306.

A plurality of conductive vias may be formed in a single light emitting element region. The amount of perforations and their contact areas may be adjusted such that the area occupied by the plurality of perforations in the plane of the region where they contact the second conductive type semiconductor layer 2304 ranges from 1% to 5% of the area of the light emitting element region. The radius of the perforation in the plane of the region of the perforated region in contact with the first conductive type semiconductor layer 2304 may be, for example, 5 micrometers to 50 micrometers, and the number of the perforations may be each light-emitting element region 1 according to the width of the light-emitting region 50. Although different depending on the width of the light-emitting element region, three or more perforations may be provided. The distance between the perforations can range from 100 microns to 500 microns, and the perforations can have a matrix structure comprising columns and rows. Further, the distance between the perforations may range from 150 microns to 450 microns. If the distance between the perforations is less than 100 micrometers, the amount of perforations is increased to relatively reduce the luminous area, and the luminous efficiency is lowered, and if If the distance between the holes is greater than 500 microns, it may be difficult to spread the current to degrade the luminous efficiency. The depth of the perforations may range from 0.5 microns to 5.0 microns, although the depth of the perforations may vary depending on the thickness of the second conductive type semiconductor layer 2306 and the active layer 2305.

The first electrode 2308a and the second electrode 2308b are formed by depositing a conductive ohmic material on the light-emitting laminate L. The first electrode 2308a and the second electrode 2308b may include at least one of Ag, Al, Ni, Cr, Cu, Au, Pd, Pt, Sn, Ti, W, Rh, Ir, Ru, Mg, Zn, and alloys thereof . For example, the second electrode 2308b may be formed as a silver (Ag) ohmic electrode layer laminated with respect to the second conductive type semiconductor layer 2306. The silver (Ag) ohmic electrode layer may also function as a light reflecting layer. A layer of a single layer or an alloy thereof made of nickel (NI), titanium (Ti), platinum (Pt), tungsten (W) may be alternately and selectively laminated on a silver (Ag) layer. In detail, the Ni/Ti layer, the TiW/Pt layer or the Ti/W layer may be laminated on the silver (Ag) layer, or the layers may be alternately laminated on the silver (Ag) layer.

The first electrode 2308a may be formed by laminating a chromium (Cr) layer and sequentially laminating an Au/Pt/Ti layer on the chromium (Cr) layer with respect to the first conductive type semiconductor layer 2304, or may be laminated The Al layer and the second conductive type semiconductor layer 2306 are formed by sequentially laminating a Ti/Ni/Au layer in the Al layer. In addition to the foregoing embodiments, the first electrode 2308a and the second electrode 2308b may use various materials or laminated structures in order to enhance ohmic characteristics or reflective characteristics.

The insulating layer 2303 may have an open area exposing at least a portion of the first electrode 2308a and the second electrode 2308b, and the first electrode pad 2319a and the second electrode pad 2319b may be connected to the first electrode 2308a and the second electrode 2308b. The insulating layer 2303 can be deposited as a vane at a temperature equal to or lower than 500 ° C via a CVD process. The thickness is from 0.01 micron to 3 microns.

The first electrode 2308a and the second electrode 2308b may be disposed in the same direction and may be mounted on the lead frame in a so-called flip chip as described below.

In particular, the first electrode 2308a can be connected to the first electrical connection unit 2309a by a conductive via, which is connected in the light-emitting laminate L via the second conductive type semiconductor layer 2306 and the active layer 2305. A conductive type semiconductor layer 2304.

The amount, shape, pitch, contact area with the first conductive type semiconductor layer 2304, and the like, and the first electrical connection unit 2309a may be appropriately adjusted to reduce the contact resistance, and the conductive via and the first electrical connection unit 2309a may be appropriately adjusted. Can be configured in columns and rows to improve current flow.

The other electrode structure may include: a second electrode 2308b formed directly on the second conductive type semiconductor layer 2306; and a second electrical connection unit 2309b formed on the second electrode 2308b. In addition to having a function of forming an electrical ohmic connection with the second conductive type semiconductor layer 2306, the second electrode 2308b may be made of a reflective material, and further, as illustrated in FIG. 35, the LED chip 2310 is mounted as a so-called flip chip structure. In the state, light emitted from the active layer 2305 can be efficiently emitted in the direction of the substrate 2301. Of course, the second electrode 2308b may be made of a light-transmitting conductive material such as a transparent conductive oxide according to the main light-emitting direction.

The two-electrode structure as described above can be electrically separated by the insulating layer 2303. The insulating layer 2303 may be made of any material as long as the material has electrical insulating properties. That is, the insulating layer 2303 can be made of any material having electrical insulating properties, and here, used A material with low light absorption. For example, yttrium oxide or tantalum nitride such as SiO2, SiOxNy, SixNy or the like can be used. The reflective filler can be dispersed in the light transmissive material to form a reflective structure.

The first electrode pad 2319a and the second electrode pad 2319b may be connected to the first and second electrical connection units 2309a and 2309b to serve as external terminals of the LED chip 2310, respectively. For example, the first electrode pad 2319a and the second electrode pad 2319b may be made of gold (Au), silver (Ag), aluminum (Al), titanium (Ti), tungsten (W), copper (Cu), tin ( Sn), nickel (Ni), platinum (Pt), chromium (Cr), NiSn, TiW, AuSn or a eutectic metal thereof. In this case, when the LED chip 2310 is mounted on the mounting substrate 2320, the first electrode pad 2319a and the second electrode pad 2319b can be bonded by using a eutectic metal so that the flip chip bonding is not required. Solder bumps. The use of a eutectic metal advantageously achieves an excellent heat dissipation effect in the mounting method as compared to the case of using solder bumps. In this case, in order to obtain an excellent heat dissipation effect, the first electrode pad 2319a and the second electrode pad 2319b may be formed to occupy a relatively large area.

Unless otherwise described, the substrate 2301 and the light-emitting laminate L can be understood with reference to what has been described above with reference to FIG. Likewise, although not shown, a buffer layer may be formed between the light-emitting laminate L and the substrate 2301. The buffer layer can be used as an undoped semiconductor layer made of a nitride or the like to alleviate lattice defects of the light-emitting laminate L grown on the buffer layer.

The substrate 2301 may have a first main surface and a second main surface opposite to each other, and the uneven structure C (ie, the depressed portion and the protruding portion) may be formed on the first main surface And at least one of the second major surfaces. The uneven structure C formed on one surface of the substrate 2301 can be formed by etching a portion of the substrate 2301 so as to be made of the same material as that of the substrate. Alternatively, the uneven structure C may be made of a different material than the material of the substrate 2301.

In the exemplary embodiment, since the uneven structure C is formed on the interface between the substrate 2301 and the first conductive type semiconductor layer 2304, the path of light emitted from the active layer 2305 may vary widely, and thus, absorption in the semiconductor layer The light absorption ratio of the light can be reduced, and the light scattering ratio can be increased, thereby improving the light extraction efficiency.

In detail, the uneven structure C may be formed to have a regular or irregular shape. The heterogeneous material used to form the uneven structure C may be a transparent conductor, a transparent insulator, or a material having excellent reflectivity. Here, as the transparent insulator, a material such as SiO2, SiNx, Al2O3, HfO, TiO2 or ZrO can be used. As the transparent conductor, a transparent conductive oxide (TCO) such as ZnO, containing an additive (for example, Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Indium oxide of Co, Mo, Cr, Sn) or the like. As the reflective material, silver (Ag), aluminum (Al), or a distributed Bragg reflector (DBR) containing a plurality of layers having different refractive indices may be used. However, the illustrative embodiments are not limited thereto.

The substrate 2301 can be removed from the first conductive type semiconductor layer 2304. In order to remove the substrate 2301, a laser lift-off (LLO) process, etching or polishing process using laser can be used. Likewise, after the substrate 2301 is removed, recesses and protrusions may be formed on the surface of the first conductive type semiconductor layer 2304.

As illustrated in FIG. 35, the LED chip 2310 is mounted on the mounting substrate 2320. The mounting substrate 2320 includes a first upper electrode layer 2312a, a first lower electrode layer 2312b, a second upper electrode layer 2313a, and a second lower electrode layer 2313b formed on the upper surface and the lower surface of the substrate body 2311, and the through substrate. The body 2311 is connected to the through holes 2313 of the upper electrode layer and the lower electrode layer. The substrate body 2311 may be made of resin, ceramic or metal, and the upper electrode layers 2312a, 2313a and the lower electrode layers 2312b, 2313b may be made of gold (Au), copper (Cu), silver (Ag) or aluminum ( Al) A metal layer made.

Of course, the substrate on which the aforementioned LED wafer 2310 is mounted is not limited to the configuration of the mounting substrate 2320 illustrated in FIG. 35, and any substrate having a wiring structure for driving the LED wafer 2310 can be used. For example, the substrate can be any of the substrates of FIGS. 25-31, and can be configured as a package structure in which the LED wafer is mounted on a package body having a pair of lead frames.

<Other examples of light-emitting elements>

LED wafers of various structures having the structure of the aforementioned LED wafer described above can also be used. For example, it is also advantageous to use an LED wafer in which surface-plasmon polaritons (SPP) are formed in the metal-dielectric boundary of the LED wafer to interact with the quantum well excitons, thus Significantly improved light extraction efficiency is obtained.

Meanwhile, the light-emitting element 420 can be configured to include at least one of a violet, blue, green, red, and infrared light-emitting element that emits white light by combining green, red, and orange phosphors with a blue LED wafer. One. In this situation, The light-emitting element 420 may have a color rendering index (CRI) adjusted to range from a sodium vapor lamp (color rendering index: 40) to a sunlight level (color rendering index: 100) or the like, and has a range of 2000 kelvin to A color temperature of 20000 Kelvin grade to produce various types of white light. The light-emitting element 420 can generate visible or infrared light having a purple, blue, green, red, or orange color to adjust the illumination color according to the surrounding atmosphere or context. Likewise, the light source device can produce light having a particular wavelength that stimulates plant growth.

White light produced by applying a yellow, green, red phosphor to a blue LED wafer and combining at least one of a green LED and a red LED thereto has two or more peak wavelengths and is positionable Connected to the (x,y) coordinates (0.4476, 0.4074), (0.3484, 0.3516), (0.3101, 0.3162), (0.3128, 0.3292), (0.3333, 0.3333) of the CIE1931 chromaticity diagram illustrated in FIG. . Alternatively, white light can be localized in the spectrum radiated by the black body and in the area surrounded by the segments. The color temperature of white light corresponds to the range from 2000 Kelvin to 20,000 Kelvin.

The phosphor can have the following experimental formula and color.

Oxide system: yellow and green Y3Al5O12: Ce, Tb3Al5O12: Ce, Lu3Al5O12: Ce

Telluride system: yellow and green (Ba, Sr) 2 SiO 4 : Eu, yellow and orange (Ba, Sr) 3 SiO 5 : Ce

Nitride system: green β-SiAlON: Eu, yellow L3Si6O11: Ce, orange α-SiAlON: Eu, red CaAlSiN3: Eu, Sr2Si5N8: Eu, SrSiAl4N7: Eu

Fluoride system: KSF system red K2SiF6: Mn4+

The composition of the phosphor should be substantially consistent with stoichiometry, and the individual elements can be replaced by different elements of the individual families of the periodic table. For example, strontium (Sr) may be substituted with barium (Ba), calcium (Ca), magnesium (Mg) or the like in an alkaline earth metal, and yttrium (Y) may be substituted with lanthanum (Tb), lanthanum (Lu). ), 钪 (Sc), 釓 (Gd) or the like. Further, cerium (EU) (ie, an activator) may be substituted with cerium (Ce), cerium (Tb), praseodymium (Er), ytterbium (Yb) or the like according to energy levels, and activated. The agent may be applied independently, or a co-activator or the like may be additionally applied to change the characteristics.

Likewise, materials such as quantum dots or the like can be used as a material to replace the phosphor, and the phosphor and quantum dots can be used in combination or independently in the LED.

The quantum dot may have a core (3 to 10 nm) including a core such as CdSe, InP or the like, a shell (0.5 to 2 nm) such as ZnS, ZnSe or the like and a ligand which stabilizes the core and the shell. The structure of (ligand), and various colors can be implemented according to the size.

Table 1 below shows the type of phosphor in the field of application of white light emitting elements using blue LEDs (440 nm to 460 nm).

The phosphor or quantum well can be coated by using at least one of the following methods Overlay: a method of ejecting it onto a light-emitting element, a method of covering as a film, and a method of attaching as a ceramic phosphor sheet, or the like.

As the spraying method, spraying, spraying, or the like is generally used, and the spraying includes a pneumatic method and a mechanical method such as a screw fastening scheme, a linear type fastening scheme, or the like. Through the injection method, the amount of dotting can be controlled via a very small amount of emissions, and the color coordinates (or chromaticity) can be controlled thereby. In the case of a method of collectively coating a phosphor at a wafer level or on a mounting board on which an LED is mounted, productivity can be improved and thickness can be easily controlled.

The method of directly covering a light-emitting element with a phosphor or a quantum dot as a film may include electrophoresis, screen printing, or phosphor molding methods, but such methods may differ depending on whether or not a side surface of the wafer needs to be coated.

Meanwhile, in order to control the efficiency of long-wavelength light-emitting phosphors to reabsorb light emitted at short wavelengths in two types of phosphors having different light-emitting wavelengths, two types of phosphor layers having different light-emitting wavelengths may be provided, and The wafer and two or more wavelengths of re-absorption and interference are minimized, and a DBR (ODR) layer can be included between the individual layers. In order to form a uniformly coated film, the phosphor is produced in the form of a film or ceramic and attached to a wafer or a light-emitting element.

In order to distinguish light efficiency and light distribution characteristics, the light conversion material may be positioned in a distal end form, and in this case, the light conversion material may be compatible with, for example, a light transmitting polymer, glass, or the like according to durability and heat resistance. The materials are positioned together.

Phosphor coating technology plays the most important role in determining the light characteristics of LED elements. Therefore, it has been studied in various ways to control the thickness of the phosphor coating layer and uniform phosphorescence. The technique of body distribution and its similarity.

A quantum dot (QD) can also be positioned in the illuminating element in the same manner as the phosphor and can be positioned in a glass or light transmissive polymer material to perform optical conversion.

In the present exemplary embodiment, the light emitting element is illustrated as a single package unit in which the LED wafer is included, but all illustrative embodiments are not limited thereto. For example, the light emitting element 120 can be the LED wafer itself. In this case, the LED wafer may be a COB type wafer, and may be mounted on a board and directly electrically connected to the board via a flip chip bonding method or a wire bonding method.

Likewise, a plurality of light emitting elements can be disposed on the board. In this case, the light-emitting elements may be the same type of light-emitting elements that generate light having the same wavelength or may be various types of light-emitting elements that generate light of different wavelengths. In the present exemplary embodiment, a plurality of light emitting elements are illustrated, but all of the exemplary embodiments are not limited thereto, and a single light emitting element may be provided.

A light-emitting device using the LED as described above can be classified into an indoor light-emitting device and an outdoor light-emitting device according to the use thereof. The indoor LED lighting device may comprise a lamp, a fluorescent lamp (LED tube), a flat type lighting device (retrofit) replacing the existing lighting fixture, and the outdoor LED lighting device may include a street lamp, a safety lamp, a floodlight, a landscape lamp, and a traffic Lights and the like.

Likewise, a lighting device using an LED can be used as an internal or external light source of the vehicle. As an internal light source, an illuminating device using an LED can be used as an interior lamp, a reading lamp or as a various instrument panel light source of a vehicle. When using an external light source, use LED The illuminating device can be used as a light source for a vehicle illuminating luminaire such as a headlight, a brake light, a turn signal, a fog light, a running light, and the like.

In addition, the LED lighting device can also be applied to a light source that acts on a robot or various mechanical devices. In particular, LED illumination using a particular wavelength band can accelerate plant growth and stabilize the user's mood or use sensitivity (or emotional) illumination or lighting to treat the disease.

A light-emitting system using the light-emitting element as described above will be described with reference to FIGS. 37 to 40. The light emitting system according to the present exemplary embodiment may be capable of providing a light-emitting element having sensitivity (or emotional) light emission instead of acting as a simple light-emitting element, and the light-emitting element having sensitivity (or emotional) light emission can be according to the surrounding environment ( For example, temperature and humidity conditions) to automatically adjust the color temperature and meet human needs.

FIG. 37 is a block diagram schematically illustrating an illumination system in accordance with an embodiment of the present disclosure.

Referring to FIG. 37, an illumination system 10000 according to an embodiment of the present disclosure may include a sensing unit 10010, a control unit 10020, a driving unit 10030, and a lighting unit 10040.

The sensing unit 10010 can be installed in an indoor or outdoor area, and can have a temperature sensor 10011 and a humidity sensor 10012 to measure at least one of ambient temperature and humidity. The sensing unit 10010 transmits the measured at least one air condition (ie, at least one of temperature and humidity) to the control unit 10020 that is electrically connected to the sensing unit 10010.

The control unit 10020 can compare the measured temperature and humidity of the air with The user sets the air condition (temperature and humidity range) set in advance, and determines the color temperature of the light-emitting unit 10040 corresponding to the air condition based on the comparison result. The control unit 10020 is electrically connected to the driving unit 10030, and controls the driving unit 10030 to drive the lighting unit 10040.

The light emitting unit 10040 operates in accordance with power supplied from the driving unit 1003. The light emitting unit 10040 can include at least one light emitting element illustrated in FIGS. 1, 8, and 15. For example, as illustrated in FIG. 38, the light emitting unit 10040 can include a first light emitting element 10041 and a second light emitting element 10042 having different color temperatures, and each of the light emitting elements 10041 and 10042 can include multiple emitting the same white light. Light-emitting element.

The first light emitting element 10041 can emit white light having a first color temperature, and the second light emitting element 10042 can emit white light having a second color temperature. In this case, the first color temperature may be lower than the second color temperature. Instead, the first color temperature can be higher than the second color temperature. Here, white light having a relatively low color temperature corresponds to warm white light, and white light having a relatively high color temperature corresponds to cool white light. When power is supplied to the first light emitting element 10041 and the second light emitting element 10042, the first light emitting element 10041 and the second light emitting element 10042 respectively emit white light having a first color temperature and a second color temperature, and the respective white light beams are mixed to implement White light having a color temperature determined by the control unit 10020.

In detail, in a state where the first color temperature is lower than the second color temperature, if the color temperature determined by the control unit 10020 is relatively high, the amount of light of the first light emitting element 10041 can be reduced and the amount of light of the second light emitting element 10042 It may be added to implement mixed white light having a predetermined color temperature. In contrast, when the predetermined color temperature is relatively low, the first light emitting element 10041 The amount can be increased and the amount of second light emitting element 10042 can be reduced to implement mixed white light having a predetermined color temperature. Here, the amount of light of each of the respective light-emitting elements 10041 and 10042 can be implemented by adjusting the amount of light of all the light-emitting elements by adjusting the electric power, or can be implemented by adjusting the amount of the light-emitting elements to be driven.

Figure 39 is a flow chart illustrating a method for controlling the illumination system illustrated in Figure 37. Referring to Fig. 39, first, the user sets the color temperature based on the temperature and humidity range via the control unit 10020 (S10). The set temperature and humidity data is stored in the control unit 10020.

In general, when the color temperature is equal to or greater than 6000 gram, a color (such as blue) that provides a cold sensation can be produced, and when the color temperature is less than 4000 gram, a color (such as red) that provides a warm sensation can be produced. Therefore, in this embodiment, when the temperature and the humidity exceed 20 ° C and 60%, respectively, the user can set the light emitting unit 10040 to be turned on via the control unit 10020 to have a color temperature higher than 6000 gram, when the temperature and When the humidity ranges from 10 ° C to 20 ° C and 40% to 60%, respectively, the user can set the light emitting unit 10040 to be turned on via the control unit 10020 to have a color temperature ranging from 4000 Kelvin to 6000 Kelvin, and when When the temperature and humidity are lower than 10 ° C and 40%, respectively, the user can set the light emitting unit 10040 to be turned on via the control unit 10020 to have a color temperature of less than 4000 Kelvin.

Next, the sensing unit 10010 measures at least one of the ambient temperature and the humidity (S20). The temperature and humidity measured by the sensing unit 10010 are transmitted to the control unit 10020.

Subsequently, the control unit 10020 compares the amount transmitted from the sensing unit 10010. The measured value is a preset value (S30). Here, the measured value is the temperature and humidity data measured by the sensing unit 10010, and the preset value is a temperature and humidity value preset by the user and stored in the control unit 10020. That is, the control unit 10020 compares the measured temperature and humidity levels with preset temperature and humidity levels.

The control unit 10020 determines whether the measured value satisfies a preset value range (S40). When the equivalent measured value satisfies the preset value range, the control unit 10020 maintains the current color temperature and continues to measure the temperature and humidity (S20). Meanwhile, when the equivalent measured value does not satisfy the preset value range, the control unit 10020 detects a preset value corresponding to the measured value and determines a corresponding color temperature (S50). Thereafter, the control unit 10020 controls the driving unit 10030 to drive the light emitting unit 10040 to have a predetermined color temperature.

Next, the driving unit 10030 drives the light emitting unit 10040 to have a predetermined color temperature (S60). That is, the driving unit 10030 supplies the required power to drive the light emitting unit 10040 to implement a predetermined color temperature. Therefore, the light emitting unit 10040 can be adjusted to have a color temperature corresponding to the temperature and humidity preset by the user according to the ambient temperature and humidity.

In this way, the illumination system is capable of automatically adjusting the color temperature of the indoor lighting unit in accordance with changes in ambient temperature and humidity, thereby satisfying human emotions that vary according to changes in the surrounding natural environment and providing psychological stability.

Figure 40 is a view schematically illustrating the use of the illumination system illustrated in Figure 37. As illustrated in FIG. 40, the light emitting unit 10040 can be mounted on a ceiling as an indoor light. Here, the sensing unit 10010 can be implemented as a separate component and mounted on an exterior wall to measure outdoor temperature and humidity. The control unit 10020 can be installed in an indoor area. To allow the user to easily perform settings and determine operations. However, the light emitting system according to the exemplary embodiment is not limited thereto, and may be mounted on a wall located in a position of the internal light emitting element or may be applicable to a lamp that can be used in indoor and outdoor areas, such as a desk lamp or the like. .

Another example of the illumination system using the foregoing light-emitting elements will be described with reference to FIGS. 41 to 44. The illumination system according to the present embodiment can automatically perform predetermined control by detecting the motion of the monitored target and the illumination intensity at the position of the monitored target, and automatically performs predetermined control.

FIG. 41 is a block diagram of a lighting system in accordance with another exemplary embodiment.

Referring to FIG. 41, the illumination system 10000' according to the present embodiment includes a wireless sensing module 10100 and a wireless illumination control device 10200.

The wireless sensing module 10100 can include a motion sensor 10100, an illumination intensity sensor 10120 that senses illumination intensity, and a first wireless communication unit that generates a wireless signal that includes the sense of motion. The motion sensing signal of the detector 10110 and the illumination intensity sensing signal from the illumination intensity sensor 10120 and conform to a predetermined communication protocol. The first wireless communication unit is configurable to generate a first ZigBee communication unit 10130 that conforms to a ZigBee signal of a predetermined communication protocol and transmits the ZigBee signal.

The wireless illumination control device 10200 may include a second wireless communication unit that receives a wireless signal from the first wireless communication unit and restores the sensing signal, a sensing signal analysis unit 10220 that analyzes the sensing signal from the second wireless communication unit, and a sense based on The operation control of the predetermined control is performed by the analysis result of the signal analysis unit 10220 Unit 10230. The second wireless communication unit can be configured as a second ZigBee communication unit 10210 that receives the ZigBee signal from the first ZigBee communication unit and restores the sensed signal.

FIG. 42 is a view illustrating a format of a ZigBee signal, according to an exemplary embodiment.

Referring to FIG. 33, the ZigBee signal from the first ZigBee communication unit 10130 may include channel information (CH) defining a communication channel, wireless network identification (ID) information (PAN_ID) defining a wireless network, and a component address indicating a target component. (Ded_Add) and sensing data containing motion and illumination intensity signals.

Similarly, the ZigBee signal from the second ZigBee communication unit 10210 may include channel information (CH) defining a communication channel, wireless network identification (ID) information (PAN_ID) defining a wireless network, and a component address indicating a target component ( Ded_Add) and sensing data containing motion and illumination intensity signals.

Based on the sensed motion and the sensed illumination intensity, the sensed signal analysis unit 10220 can analyze the sensed signal from the second ZigBee communication unit 10210 to detect a satisfied condition among the plurality of conditions.

Here, the operation control unit 10230 may set a plurality of controls based on a plurality of conditions set in advance by the sensing signal analysis unit 10220, and perform control corresponding to the condition detected by the sensing signal analysis unit 10220.

FIG. 43 is a view illustrating a sensing signal analysis unit and an operation control unit, according to an exemplary embodiment. Referring to FIG. 43, for example, based on the sensed motion and the sensed illumination intensity, the sensing signal analysis unit 10220 can analyze the sensing signal from the second ZigBee communication unit 10210 and detect the first, second, and third. condition The conditions have been met in (Condition 1, Condition 2, and Condition 3).

In this case, the operation control unit 10230 can set the first, second, and third corresponding to the first, second, and third conditions (condition 1, condition 2, and condition 3) preset by the sensing signal analysis unit 10220. Three controls (Control 1, Control 2, and Control 3), and control corresponding to the conditions detected by the sensing signal analysis unit 10220 are performed.

44 is a flow chart illustrating operation of a wireless lighting system, in accordance with an illustrative embodiment.

In FIG. 44, the motion sensor 10110 detects motion in operation S110. In operation S120, the illumination intensity sensor 10120 detects the illumination intensity. Operation S200 is a processing program for transmitting and receiving ZigBee signals. Operation S200 may include an operation S130 of transmitting a ZigBee signal by the first ZigBee communication unit 10130, and an operation S210 of receiving a ZigBee signal by the second ZigBee communication unit 10210. In operation S220, the sensing signal analysis unit 10220 analyzes the sensing signal. In operation S230, the operation control unit 10230 performs predetermined control. In operation S240, it is determined whether to terminate the lighting system.

The operation of the wireless sensing module and the wireless lighting control device according to an exemplary embodiment will be described with reference to FIGS. 41 through 44.

First, a wireless sensing module 10100 of a wireless lighting system according to an exemplary embodiment will be described with reference to FIGS. 41, 42, and 44. The wireless lighting system 10100 according to the exemplary embodiment is mounted at a position where the light emitting element is mounted to detect the current illumination intensity of the current of the light emitting element and detect human motion in the vicinity of the light emitting element.

That is, the motion sensor 10110 of the wireless sensing module 10100 is configured to be capable of sensing a human infrared sensor or the like. The motion sensor 10100 senses motion and supplies it to the first ZigBee communication unit 10130 (S110 in Fig. 44). The illumination intensity sensor 10120 of the wireless sensing module 10100 senses the illumination intensity and provides it to the first ZigBee communication unit 10130 (S120).

Accordingly, the first ZigBee communication unit 10130 generates a ZigBee signal and wirelessly transmits the generated ZigBee signal, the ZigBee signal including the motion sensing signal from the motion sensor 10100 and the illumination intensity sensing from the illumination intensity sensor 10120. The signal conforms to a predetermined communication protocol (S130).

Referring to FIG. 42, the ZigBee signal from the first ZigBee communication unit 10130 may include channel information (CH) defining a communication channel, wireless network identification (ID) information (PAN_ID) defining a wireless network, and a component address indicating a target component. (Ded_Add) and sensing data, and here, the sensing data includes motion values and illumination intensity values.

Next, a wireless lighting control apparatus 10200 of a wireless lighting system according to an exemplary embodiment will be described with reference to FIGS. 41 to 44. The wireless lighting control device 10200 of the wireless lighting system according to an exemplary embodiment may control a predetermined operation according to illumination intensity values and motion values included in a ZigBee signal from the wireless sensing module 10100.

That is, the second ZigBee communication unit 10210 of the wireless light emission control device 10200 according to the exemplary embodiment receives the ZigBee signal from the first ZigBee communication unit 10130, restores the sensing signal from the ZigBee signal, and restores the sensedness. The measurement signal is supplied to the sensing signal analysis unit 10200 (S210 in Fig. 44).

Referring to FIG. 42, the ZigBee signal from the second ZigBee communication unit 10210 may include channel information (CH) defining a communication channel, wireless network identification (ID) information (PAN_ID) defining a wireless network, and a component address indicating a target component. (Ded_Add) and sensing data. The wireless network can be identified based on channel information (CH) and wireless network ID information (PAN_ID), and the sensed components can be identified based on the component address. The sensing signal includes a motion value and an illumination intensity value.

Referring to FIG. 41, the sensing signal analysis unit 10220 analyzes the illumination intensity value and the motion value included in the sensing signal from the second ZigBee communication unit 10210, and supplies the analysis result to the operation control unit 10230 (in FIG. 44 S220).

Therefore, the operation control unit 10230 can perform predetermined control in accordance with the analysis result from the sensing signal analysis unit 10220 (S230).

Based on the sensed motion and the sensed illumination intensity, the sensed signal analysis unit 10220 can analyze the sensed signal from the second ZigBee communication unit 10210 and detect a satisfied condition among the plurality of conditions. Here, the operation control unit 10230 may set a plurality of controls corresponding to a plurality of conditions set in advance by the sensing signal analysis unit 10220, and perform control corresponding to the conditions detected by the sensing signal analysis unit 10220.

For example, referring to FIG. 43, the sensing signal analyzing unit 10220 can detect the first and second sums based on the sensed human motion and the sensed illumination intensity by analyzing the sensing signal from the second ZigBee communication unit 10210. The conditions in the third condition (Condition 1, Condition 2, and Condition 3) have been met.

In this case, the operation control unit 10230 can set the first, second, and third corresponding to the first, second, and third conditions (condition 1, condition 2, and condition 3) preset by the sensing signal analysis unit 10220. Three controls (Control 1, Control 2, and Control 3), and control corresponding to the conditions detected by the sensing signal analysis unit 10220 are performed.

For example, when the first condition (Condition 1) corresponds to a condition in which human motion is sensed at the front door and the illumination intensity at the front door is not low (not dark), the first control may cut off all of the predetermined lamps. When the second condition (Condition 2) corresponds to a condition in which human motion is sensed at the front door and the illumination intensity at the front door is low (dim), the second control may turn on some preset lights (ie, at the front door) Some lights and some lights in the living room). The third control may turn on all of the preset lights when the third condition (Condition 3) corresponds to a condition in which human motion is sensed at the door stop and the illumination intensity at the front door is extremely low (very dark).

Unlike the foregoing, in addition to the operation of turning the lamp on or off, the first, second, and third controls may be applied in various manners according to a preset operation. For example, the first, second, and third controls may be associated with operation of the lights and air conditioners during the summer or may be associated with operation of the lights and heaters during the winter.

Another example of a lighting system using the foregoing lighting element will be described with reference to FIGS. 45 to 48.

FIG. 45 is a block diagram schematically illustrating constituent components of a lighting system according to another exemplary embodiment. The illumination system 10000" according to the present embodiment may include a motion sensor unit 11000, an illumination intensity sensor unit 12000, and a light unit 13000. And control unit 14000.

The motion sensor unit 11000 senses the motion of the object. For example, the lighting system can be attached to a movable item such as a container or a vehicle, and the motion sensor unit 11000 senses the motion of the moving item. When the motion of the object to which the illumination system is attached is sensed, the motion sensor unit 11000 outputs a signal to the control unit 14000 and the illumination system is activated. The motion sensor unit 11000 can include an accelerometer, a geomagnetic sensor, or the like.

An illumination intensity sensor unit 12000, one type of optical sensor, measures the illumination intensity of the surrounding environment. When the motion sensor unit 11000 senses the motion of the object to which the illumination illumination system is attached, the illumination intensity sensor unit 12000 is activated according to the signal output by the control unit 14000. The lighting system illuminates during nighttime work or in a dark environment to alert workers or operators to their surroundings and to enable drivers to ensure visibility at night. Therefore, even when the motion of the object to which the illumination system is attached is sensed, if the illumination intensity higher than the predetermined level is ensured (during the daytime), the illumination system does not need to emit light. Moreover, even during the daytime, if it rains, the illumination intensity may be quite low, so it is necessary to inform the worker or the operator of the movement of the container, and therefore, the illumination unit needs to emit light. Therefore, whether or not the light-emitting unit 13000 is turned on is determined based on the illumination intensity value measured by the illumination intensity sensor unit 12000.

The illumination intensity sensor unit 12000 measures the illumination intensity of the surrounding environment and outputs the measurement value to the control unit 14000 as described below. Meanwhile, when the illumination intensity value is equal to or higher than a preset value, the light-emitting unit 13000 does not need to emit light, and thus the entire system is terminated.

When the illumination intensity value measured by the illumination intensity sensor unit 12000 is lower than a preset value, the light emitting unit 13000 emits light. A worker or operator can recognize the light emission from the lighting unit 1300 to identify the movement of the container or the like. As the light emitting unit 13000, the aforementioned light emitting element can be used.

Moreover, the light emitting unit 13000 can adjust the intensity of its light emission according to the illumination intensity value of the surrounding environment. When the illumination intensity value of the surrounding environment is low, the light emitting unit 13000 can increase the intensity of its light emission, and when the illumination intensity value of the surrounding environment is relatively high, the light emitting unit 13000 can reduce the intensity of its light emission, thus preventing power waste.

The control unit 14000 generally controls the motion sensor unit 1100, the illumination intensity sensor unit 12000, and the illumination unit 13000. When the motion sensor unit 11000 senses the motion of the object to which the illumination system is attached and outputs a signal to the control unit 14000, the control unit 14000 outputs an operation signal to the illumination intensity sensor unit 12000. The control unit 14000 receives the illumination intensity value measured by the illumination intensity sensor unit 12000, and determines whether the illumination unit 13000 is turned on (operated).

Figure 46 is a flow chart illustrating a method for controlling an illumination system. Hereinafter, a method for controlling an illumination system will be described with reference to FIG.

First, the motion of the object to which the illumination system is attached is sensed and an operation signal is output (S310). For example, the motion sensor unit 11000 can sense the motion of a container or vehicle on which the lighting system is installed, and when sensing the motion of the container or the vehicle, the motion sensor unit 11000 outputs an operation signal. The operational signal can be a signal used to initiate the total power. That is, when the motion of the container or the vehicle is sensed, the motion sensor unit 11000 outputs an operation signal to the control unit 14000.

Next, based on the operation signal, the illumination intensity of the surrounding environment is measured and the illumination intensity value is output (S320). When an operation signal is applied to the control unit 14000, the control unit 14000 outputs a signal to the illumination intensity sensor unit 12000, and the illumination intensity sensor unit 12000 then measures the illumination intensity of the surrounding environment. The illumination intensity sensor unit 12000 outputs the measured illumination intensity values of the surrounding environment to the control unit 14000. Thereafter, whether or not the light-emitting unit is turned on is determined based on the illumination intensity value, and the light-emitting unit emits light according to the determination.

First, the illumination intensity value is compared to a predetermined value for use in the determination. When the illumination intensity value is input to the control unit 14000, the control unit 14000 compares the received illumination intensity value with the stored preset value and determines whether the received illumination intensity value is lower than the stored preset value. Here, the preset value is a value for determining whether or not the lighting element is turned on. For example, the pre-set value may be an illumination intensity value that may be difficult for a worker or driver to identify an object with the naked eye or may make a mistake in a situation (eg, when the sunset begins).

When the illumination intensity value measured by the illumination intensity sensor unit 12000 is higher than a preset value, the illumination of the illumination unit is not required, so the control unit 14000 shuts down the entire system.

Meanwhile, when the illumination intensity value measured by the illumination intensity sensor unit 12000 is higher than a preset value, illumination of the illumination unit is required, and thus the control unit 14000 outputs a signal to the illumination unit 13000 and the illumination unit 13000 emits light ( S340).

FIG. 47 is a diagram for explaining an illumination system according to another exemplary embodiment. Flow chart of the method. Hereinafter, a method for controlling a lighting system according to another exemplary embodiment will be described. However, the same procedure as the procedure for controlling the illumination system as described above with reference to FIG. 46 will be omitted.

As illustrated in FIG. 47, in the case of the method for controlling the light-emitting system according to the present embodiment, the intensity of light emission of the light-emitting unit can be adjusted according to the illumination intensity value of the surrounding environment.

As described above, the illumination intensity sensor unit 12000 outputs the illumination intensity value to the control unit 14000 (S320). When the illumination intensity value is lower than the preset value (S330), the control unit 14000 determines the range of the illumination intensity value (S340-1). The control unit 14000 has a range of subdivided illumination intensity values, based on which the control unit 14000 determines the range of measured illumination intensity values.

Next, when the range of the illumination intensity value is determined, the control unit 14000 determines the intensity of the light emission of the illumination unit (S340-2), and thus, the illumination unit 13000 emits light (S340-3). The intensity of the light emission of the light-emitting unit can be divided according to the illumination intensity value, and here, the illumination intensity value varies depending on the weather, time, and surrounding environment, and thus the intensity of the light emission of the light-emitting unit can also be adjusted. By adjusting the intensity of the light emission according to the range of the illumination intensity values, power waste can be prevented and the attention of the worker or the operator can be attracted to the surrounding environment.

FIG. 48 is a flowchart illustrating a method for controlling an illumination system, according to another exemplary embodiment. Hereinafter, a method for controlling a lighting system according to another exemplary embodiment will be described. However, the same procedure as the procedure for controlling the illumination system as described above with reference to FIGS. 46 and 47 will be omitted.

The method for controlling the light-emitting system according to the present embodiment further includes an operation S350 of determining whether the motion of the object to which the light-emitting system is attached is maintained in a state in which the light-emitting unit 13000 emits light, and determining whether to maintain light emission.

First, when the light emitting unit 13000 starts emitting light, the termination of light emission can be determined based on whether the container or the vehicle on which the light emitting system is mounted moves. Here, when the movement of the container is stopped, it can be determined that its operation has been terminated. In addition, when the vehicle is temporarily stopped at the pedestrian crossing, the light emission of the lighting unit can be stopped to prevent interference with the oncoming driver's field of view.

When the container or vehicle moves again, the motion sensor unit 11000 operates and the lighting unit 14000 can begin to emit light.

Whether or not the light emission is maintained may be determined based on whether the motion of the object to which the illumination system is attached is sensed by the motion sensor unit 11000. When the motion of the object is continuously sensed by the motion sensor unit 11000, the illumination intensity is measured again and it is determined whether the light emission is maintained. At the same time, the system terminates when the motion of the object is not sensed.

Light-emitting devices using LEDs as described above can be modified in their optical design depending on the type, location and use of the product. For example, regarding the aforementioned sensitivity illumination, in addition to the technique of controlling the color, temperature, brightness, and hue of the illumination, wireless (remote) control technology for using a portable component such as a smart phone can be provided. To control the technology of illuminating.

Also, in addition, a visible light wireless communication technology that is intended to achieve the unique purpose of the LED light source and to serve as a communication unit by adding a communication function to the LED lighting device and the display element may be available. This is because, compared to existing light sources, The LED light source advantageously has a long life and excellent power efficiency, implements various colors, supports a high switching rate for digital communication, and can be used for digital control.

The visible light wireless communication technology is a wireless communication technology that wirelessly transmits information by using light having a visible light wavelength band recognizable by the human eye. The visible light wireless communication technology differs from the wired optical communication technology in that it uses light having a visible light wavelength band and is different from wired optical communication technology in that the communication environment is based on a wireless scheme.

Similarly, unlike RF wireless communication, visible light wireless communication technology has excellent convenience and physical security properties in that it can be used freely without adjustment or permission in terms of frequency usage; the difference is that the user can use it. The eye checks the communication link, and in summary, the visible light wireless communication technology is characterized by obtaining a unique self-communication and communication function fusion technique (or convergence technique) as a light source.

As set forth above, according to an exemplary embodiment, a light emitting device capable of extending the life of a light source and improving light output by overcoming limited heat radiation efficiency according to natural convection to significantly improve heat radiation efficiency can be provided. .

Additionally, illumination devices can be provided that have dimensions that fall within the ANSI standard while having enhanced heat dissipation efficiency.

The various advantages and effects of the illustrative embodiments are not limited to the above description, and will be more readily understood by the explanation of the specific exemplary embodiments.

Although the present invention has been shown and described in connection with the embodiments, it will be apparent to those skilled in the art Modifications and variations are possible in the spirit and scope of the invention.

10‧‧‧Lighting device

100‧‧‧Base

110‧‧‧ coupling edge

111‧‧‧Flange section

112‧‧‧ Groove

120‧‧‧Support board

120a‧‧‧Surface

121‧‧‧Heat radiation fins

122‧‧‧Fixed section

123‧‧‧ side wall

130‧‧‧Air discharge hole

200‧‧‧ Shell

210‧‧‧Terminal part

220‧‧‧Channel section

221‧‧‧ first channel

222‧‧‧second channel

230‧‧‧Air introduction hole

300‧‧‧Cooling fan

400‧‧‧Light source module

410‧‧‧Substrate

420‧‧‧Lighting elements

500‧‧‧Reflow prevention section

510‧‧‧Circular body

511‧‧‧Central hole

520‧‧ ‧ sales guide

600‧‧‧ cover

610‧‧ lens

O‧‧‧ center axis

S‧‧‧screw

Claims (10)

A lighting device comprising: a base comprising a coupling rim and a support plate disposed on an inner side of the coupling rim; a housing configured to be coupled to the coupling rim to cause the support The panel is covered, the housing including a channel portion configured to direct introduction of air and air introduction configured to introduce the air guided via the channel portion into an interior space of the housing a cooling fan disposed on an upper surface of the support plate covered by the outer casing, wherein the cooling fan is configured to draw the air introduced through the air introduction hole into the outer casing In the inner space, the inhaled air is discharged outward through an air discharge hole in the base; and a light source module is mounted on a lower surface of the support plate, wherein the passage portion is along The outer surface of the outer casing provides a region that is recessed in a stepped manner. The light-emitting device of claim 1, wherein the air introduction hole includes an annular shape along the circumference of the outer casing in the region recessed in the stepped manner in the channel portion, and Wherein the passage portion extends upward from the lower end of the outer casing along the outer side of the outer casing to communicate with the air introduction hole. The light-emitting device of claim 1, wherein the air introduction hole includes an annular shape along a circumference of the outer casing, And wherein the channel portion includes: a first passage along a circumference of the outer casing in a position corresponding to the air introduction hole to communicate with the air introduction hole; and a second passage from the The first passage extends to the lower end of the outer casing to be exposed to the outside. The illuminating device of claim 1, wherein the channel portion includes a plurality of channels, and at least one of the plurality of channels is recessed in the outer surface of the outer casing to The air introduction holes are connected. The illuminating device of claim 1, wherein the coupling rim includes a groove having a shape and a position corresponding to the channel portion such that the coupling rim is operable to The channel portions of the outer casing are connected. The illuminating device of claim 1, wherein the coupling rim comprises: a flange portion protruding outward from a lower end of the coupling rim, wherein the flange portion is formed in the A plurality of vent holes in the circumference of the rim are coupled. The light-emitting device of claim 1, wherein the substrate further includes an air discharge hole between the outer circumferential surface of the support plate and the inner surface of the coupling rim to introduce radial discharge The air in the interior space of the outer casing. The light-emitting device of claim 1, wherein the substrate further includes an air discharge hole in a central portion of the support plate to discharge the introduction to the The air in the interior space of the outer casing. The light-emitting device of claim 1, wherein the substrate comprises a plurality of heat radiation fins on the upper surface of the support plate facing the cooling fan. A lighting device comprising: a substrate comprising an air venting aperture; a housing comprising: a channel portion provided in a stepped manner along the outer surface of the housing by the recessed region; and an air introduction aperture configured to be Air directed by the channel portion is introduced into an interior space of the outer casing, wherein the outer casing is configured to be disposed on an upper side of the substrate; a cooling fan configured to be disposed within the outer casing and Configuring to draw the air into the interior space of the outer casing and to vent the inhaled air outward through the air venting aperture; and a light source module configured to be disposed in the On the underside of the substrate, and including at least one light emitting element and at least one lens disposed on the light emitting element.