TW201402252A - Silver microparticles, method for producing same, and electronic device, conductive film, and conductive paste containing said silver microparticles - Google Patents
Silver microparticles, method for producing same, and electronic device, conductive film, and conductive paste containing said silver microparticles Download PDFInfo
- Publication number
- TW201402252A TW201402252A TW102103963A TW102103963A TW201402252A TW 201402252 A TW201402252 A TW 201402252A TW 102103963 A TW102103963 A TW 102103963A TW 102103963 A TW102103963 A TW 102103963A TW 201402252 A TW201402252 A TW 201402252A
- Authority
- TW
- Taiwan
- Prior art keywords
- silver
- fine particles
- silver fine
- solution
- microparticles
- Prior art date
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 176
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 167
- 239000004332 silver Substances 0.000 title claims abstract description 167
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000011859 microparticle Substances 0.000 title claims abstract description 33
- 239000002245 particle Substances 0.000 claims abstract description 77
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000243 solution Substances 0.000 claims abstract description 28
- 239000003223 protective agent Substances 0.000 claims abstract description 27
- 229910001961 silver nitrate Inorganic materials 0.000 claims abstract description 20
- 239000007864 aqueous solution Substances 0.000 claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 12
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 11
- 238000009777 vacuum freeze-drying Methods 0.000 claims abstract description 8
- 239000011259 mixed solution Substances 0.000 claims abstract description 6
- 238000001556 precipitation Methods 0.000 claims abstract description 4
- 239000010419 fine particle Substances 0.000 claims description 117
- 239000007788 liquid Substances 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000004108 freeze drying Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 25
- 238000011049 filling Methods 0.000 abstract description 16
- 230000002829 reductive effect Effects 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 16
- 229920000642 polymer Polymers 0.000 description 14
- 238000000576 coating method Methods 0.000 description 13
- 238000006722 reduction reaction Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 238000003756 stirring Methods 0.000 description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 238000002156 mixing Methods 0.000 description 9
- 239000011814 protection agent Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 7
- -1 polyphenylene terephthalate Polymers 0.000 description 7
- 239000006228 supernatant Substances 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 6
- 229920001225 polyester resin Polymers 0.000 description 6
- 239000004645 polyester resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 5
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002923 metal particle Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000003973 paint Substances 0.000 description 4
- 238000010298 pulverizing process Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000010908 decantation Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000002082 metal nanoparticle Substances 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- GLZPCOQZEFWAFX-UHFFFAOYSA-N Geraniol Chemical compound CC(C)=CCCC(C)=CCO GLZPCOQZEFWAFX-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- PWATWSYOIIXYMA-UHFFFAOYSA-N Pentylbenzene Chemical compound CCCCCC1=CC=CC=C1 PWATWSYOIIXYMA-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- QMVPMAAFGQKVCJ-UHFFFAOYSA-N citronellol Chemical compound OCCC(C)CCC=C(C)C QMVPMAAFGQKVCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000010946 fine silver Substances 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- CDOSHBSSFJOMGT-UHFFFAOYSA-N linalool Chemical compound CC(C)=CCCC(C)(O)C=C CDOSHBSSFJOMGT-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- 239000001490 (3R)-3,7-dimethylocta-1,6-dien-3-ol Substances 0.000 description 1
- QMVPMAAFGQKVCJ-SNVBAGLBSA-N (R)-(+)-citronellol Natural products OCC[C@H](C)CCC=C(C)C QMVPMAAFGQKVCJ-SNVBAGLBSA-N 0.000 description 1
- CDOSHBSSFJOMGT-JTQLQIEISA-N (R)-linalool Natural products CC(C)=CCC[C@@](C)(O)C=C CDOSHBSSFJOMGT-JTQLQIEISA-N 0.000 description 1
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- GVNHOISKXMSMPX-UHFFFAOYSA-N 2-[butyl(2-hydroxyethyl)amino]ethanol Chemical compound CCCCN(CCO)CCO GVNHOISKXMSMPX-UHFFFAOYSA-N 0.000 description 1
- XHJGXOOOMKCJPP-UHFFFAOYSA-N 2-[tert-butyl(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(C(C)(C)C)CCO XHJGXOOOMKCJPP-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- NTKBNCABAMQDIG-UHFFFAOYSA-N 3-butoxypropan-1-ol Chemical compound CCCCOCCCO NTKBNCABAMQDIG-UHFFFAOYSA-N 0.000 description 1
- AWQSAIIDOMEEOD-UHFFFAOYSA-N 5,5-Dimethyl-4-(3-oxobutyl)dihydro-2(3H)-furanone Chemical compound CC(=O)CCC1CC(=O)OC1(C)C AWQSAIIDOMEEOD-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- CIWBSHSKHKDKBQ-DUZGATOHSA-N D-araboascorbic acid Natural products OC[C@@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-DUZGATOHSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000005792 Geraniol Substances 0.000 description 1
- GLZPCOQZEFWAFX-YFHOEESVSA-N Geraniol Natural products CC(C)=CCC\C(C)=C/CO GLZPCOQZEFWAFX-YFHOEESVSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001447 alkali salts Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 description 1
- JGQFVRIQXUFPAH-UHFFFAOYSA-N beta-citronellol Natural products OCCC(C)CCCC(C)=C JGQFVRIQXUFPAH-UHFFFAOYSA-N 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 235000000484 citronellol Nutrition 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229930007927 cymene Natural products 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 235000010350 erythorbic acid Nutrition 0.000 description 1
- 239000004318 erythorbic acid Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 229940113087 geraniol Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229940026239 isoascorbic acid Drugs 0.000 description 1
- YWXYYJSYQOXTPL-SLPGGIOYSA-N isosorbide mononitrate Chemical compound [O-][N+](=O)O[C@@H]1CO[C@@H]2[C@@H](O)CO[C@@H]21 YWXYYJSYQOXTPL-SLPGGIOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229930007744 linalool Natural products 0.000 description 1
- 239000012280 lithium aluminium hydride Substances 0.000 description 1
- 150000004668 long chain fatty acids Chemical class 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010414 supernatant solution Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
- B22F2301/255—Silver or gold
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
Description
本發明係關於熱收縮性及低溫燒結性優異,同時於基板上形成之電極或電路圖型中之填充性優異之平均粒徑30~100nm之銀微粒子及其製造方法,以及含有該銀微粒子之導電性糊料、導電性膜及電子裝置。 The present invention relates to a silver fine particle having an average particle diameter of 30 to 100 nm which is excellent in heat shrinkability and low-temperature sinterability, and which is excellent in filling property in an electrode or a circuit pattern formed on a substrate, a method for producing the same, and a conductive film containing the silver fine particles. Paste, conductive film and electronic device.
電子裝置之電極或電路圖型之形成係使用含金屬粒子之導電性糊料於基板上印刷電極或電路圖型後,經加熱燒成並使導電性糊料中所含之金屬粒子燒結而進行,但近年來,其加熱燒成溫度有低溫化之傾向。 The electrode or circuit pattern of the electronic device is formed by printing an electrode or a circuit pattern on a substrate using a conductive paste containing metal particles, and then firing the metal particles contained in the conductive paste by heating, but In recent years, the heating and firing temperature tends to decrease.
例如,電子裝置之安裝基板一般可加熱至300℃左右,為了耐熱性優異雖使用了聚醯亞胺製之可撓性基板,但由於昂貴,故最近已檢討以更便宜之PET(聚對苯二甲酸乙二酯)基板或PEN(聚萘二甲酸乙二酯)基板作為替代材料。然而,PET基板或PEN基板相較於聚醯亞胺製可撓性基板其耐熱性較低,尤其,膜配線板中所用之PET薄膜基板須在150℃以下進行加熱燒成。 For example, the mounting substrate of an electronic device can be generally heated to about 300 ° C, and a flexible substrate made of polyimide is used for excellent heat resistance. However, since it is expensive, PET (polyphenylene terephthalate) has been recently reviewed. A polyethylene dicarboxylate substrate or a PEN (polyethylene naphthalate) substrate is used as an alternative material. However, the PET substrate or the PEN substrate has lower heat resistance than the flexible substrate made of polyimide. In particular, the PET film substrate used in the film wiring board must be heated and fired at 150 ° C or lower.
又,若能在比200℃更低之溫度下進行加熱燒 成,則亦可能於聚碳酸酯或紙等基板形成電極或電路圖型,而擴大各種電極材等之用途受到期待。 Also, if it can be heated at a temperature lower than 200 ° C In addition, it is also possible to form an electrode or a circuit pattern on a substrate such as polycarbonate or paper, and it is expected to expand the use of various electrode materials and the like.
作為此種可低溫燒成之導電性糊料之原料的 金屬粒子,奈米級之銀微粒子受到期待。其理由為金屬粒子之大小成為奈米級時表面活性變高,熔點相較於金屬塊體亦更為降低,故可在低的溫度燒結。且,相較於銅等之其他導電性粒子,銀微粒子雖有昂貴,且即使於金屬粒子中亦易引起遷移之缺點,但相較於具有相同程度之比電阻的銅,則由於不易氧化故易於操作。 As a raw material of such a low-temperature fired conductive paste Metal particles, nano-sized silver particles are expected. The reason for this is that when the size of the metal particles becomes nanometer, the surface activity becomes high, and the melting point is lower than that of the metal block, so that sintering can be performed at a low temperature. Moreover, compared with other conductive particles such as copper, the silver fine particles are expensive, and even if they are easily caused to migrate in the metal particles, they are less susceptible to oxidation than copper having the same specific resistance. Easy to operate.
且,奈米級之銀微粒子可在低溫下燒結,同 時一次燒結時可維持耐熱性,故亦被期待利用以往之焊料所沒有之性質作為無鉛焊料之替代材料。 Moreover, the nano-sized silver particles can be sintered at a low temperature, the same When heat resistance is maintained at the time of one sintering, it is expected to be a substitute for lead-free solder by utilizing properties not found in conventional solders.
另一方面,銀微粒子一般由於有粒子尺寸愈 小則敲緊密度愈小之傾向,故以含該銀微粒子之導電糊料形成之微細配線難以提高銀微粒子之填充率,不利於電阻值之下降。 On the other hand, silver particles generally have a larger particle size. In the case of a small tap, the smaller the degree of tightness is, the fine wiring formed of the conductive paste containing the silver fine particles is less likely to increase the filling ratio of the silver fine particles, which is disadvantageous for the decrease in the resistance value.
另外,粒子之結晶性低之銀微粒子會有加熱 燒成時之熱收縮率變大之傾向,因此,例如於電子零件之情況下,會有自基材剝離由含該銀微粒子之導電糊料形成之微細配線,且配線變細而成為高電阻之問題。又,粉末冶金中,發生燒結體之尺寸精度變差等之問題。 In addition, the silver particles with low crystallinity of the particles will be heated. In the case of an electronic component, for example, in the case of an electronic component, the fine wiring formed of the conductive paste containing the silver fine particles is peeled off from the substrate, and the wiring becomes thin and becomes high resistance. The problem. Further, in powder metallurgy, problems such as deterioration in dimensional accuracy of the sintered body occur.
迄今為止,已提案有含金屬奈米粒子與分散 劑之具有粒子尺寸分佈之金屬膠體粒子作為可形成低溫燒 結性優異之硬質被膜之含金屬奈米粒子之金屬膠體粒子(專利文獻1)。又,已提案有與作為保護劑之碳數6以下之直鏈脂肪酸鍵結之銀微粒子作為在含水之極性溶劑中亦安定存在之微小銀粒子(專利文獻2)。且,作為分散性高、兼具焊料潤濕性與耐焊接性之銀粉,已知有由至少含有一個結晶粒徑之最小值為0.3μm以上之結晶顆粒且敲緊密度為4g/cm3以上之多結晶銀微粒子所成之銀粉(專利文獻3)。 Heretofore, metal colloidal particles having a particle size distribution including metal nanoparticles and a dispersing agent have been proposed as metal colloidal particles containing metal nanoparticles which can form a hard film excellent in low-temperature sinterability (Patent Document 1). Further, silver fine particles bonded to a linear fatty acid having 6 or less carbon atoms as a protective agent have been proposed as fine silver particles which are also stably present in a polar solvent containing water (Patent Document 2). Further, as a silver powder having high dispersibility and having solder wettability and solder resistance, it is known that crystal particles having a minimum crystal grain size of at least 0.3 μm or more and a knocking degree of 4 g/cm 3 or more are known. A silver powder formed by a plurality of crystalline silver fine particles (Patent Document 3).
[先前技術文獻] [Previous Technical Literature]
[專利文獻] [Patent Literature]
[專利文獻1]:特開2010-229544 [Patent Document 1]: Special Opening 2010-229544
[專利文獻2]:特開2009-120949號公報 [Patent Document 2]: JP-A-2009-120949
[專利文獻3]:特開2011-1581號公報 [Patent Document 3]: JP-A-2011-1581
前述專利文獻1中雖揭示含金屬奈米粒子與分散劑之具有粒子尺寸分佈之金屬膠體粒子,但專利文獻1記載之製造方法並未針對硝酸銀溶液與還原劑溶液之混合時之溫度控制加以考慮,且,針對乾燥步驟亦僅以加壓過濾機回收銀膠體粒子凝聚體。因此,以專利文獻1記載之製造方法獲得之銀膠體粒子如後述比較例所示,敲緊密度成為3g/cm3以下,且以含該銀膠體粒子之導電糊料形 成之微細配線難以提高銀微粒子之填充率,不利於電阻值之減低。又,銀微粒子表面之有機物殘留量由於為2.5重量%以上,故亦難以稱為低溫燒結性優異者。 In the above-mentioned Patent Document 1, metal colloidal particles having a particle size distribution of the metal nanoparticle and the dispersing agent are disclosed, but the manufacturing method described in Patent Document 1 is not considered for the temperature control in the mixing of the silver nitrate solution and the reducing agent solution. Further, for the drying step, only the silver colloidal particle agglomerates were recovered by a pressure filter. Therefore, as shown in the comparative example described later, the silver colloidal particles obtained by the production method described in Patent Document 1 have a knocking degree of 3 g/cm 3 or less, and it is difficult to increase the silver by the fine wiring formed of the conductive paste containing the silver colloidal particles. The filling rate of the microparticles is not conducive to the reduction of the resistance value. Further, since the amount of the organic substance remaining on the surface of the silver fine particles is 2.5% by weight or more, it is difficult to be said to be excellent in low-temperature sintering property.
另外,專利文獻2中雖揭示與作為保護劑之 碳數6以下之直鏈脂肪酸鍵結之銀粒子,但如後述比較例所示,所得銀微粒子之敲緊密度為3g/cm3以下,且BET比表面積值亦為7m2/g以上,故以含該銀微粒子之導電糊料形成之微細配線難以提高銀微粒子之填充率,不利於電阻值之減低。 Further, in Patent Document 2, silver particles bonded to a linear fatty acid having 6 or less carbon atoms as a protective agent are disclosed, but as shown in a comparative example described later, the obtained silver fine particles have a knocking degree of 3 g/cm 3 or less, and Since the BET specific surface area value is also 7 m 2 /g or more, it is difficult to increase the filling ratio of the silver fine particles by the fine wiring formed of the conductive paste containing the silver fine particles, which is disadvantageous in reducing the resistance value.
專利文獻3中雖揭示由含至少一個結晶粒徑 之最小值為0.3μm以上之結晶粒且敲緊密度為4g/cm3以上之多結晶銀粒子所成之銀粉,但最小粒徑為0.21μm以上,粒子尺寸大,故對於近年來於基板上形成之微細電極或電路圖型印刷之微細化不利。且,由於粒子尺寸大,故難以稱為低溫燒結性優異者。 Patent Document 3 discloses a silver powder composed of polycrystalline silver particles containing at least one crystal grain having a minimum crystal grain size of 0.3 μm or more and a knock density of 4 g/cm 3 or more, but the minimum particle diameter is 0.21 μm. As described above, since the particle size is large, it is disadvantageous for the miniaturization of the fine electrode or circuit pattern printing formed on the substrate in recent years. Further, since the particle size is large, it is difficult to be said to be excellent in low-temperature sinterability.
因此,本發明之技術課題係提供一種平均粒 徑(DSEM)為30~100nm之微粒子,同時具有3.0g/cm3以上之高敲緊密度,且熱收縮性及低溫燒結性優異,同時於基板上形成之電極或電路圖型中之填充性優異之銀微粒子及其製造方法。 Therefore, the technical problem of the present invention is to provide a fine particle having an average particle diameter (D SEM ) of 30 to 100 nm and a high knocking degree of 3.0 g/cm 3 or more, and excellent heat shrinkability and low-temperature sinterability, and at the same time Silver fine particles excellent in filling property in an electrode or a circuit pattern formed on a substrate and a method for producing the same.
前述技術課題可藉由如下之本發明達成。 The above technical problems can be achieved by the present invention as follows.
亦即,本發明為一種銀微粒子,其特徵為平 均粒徑(DSEM)為30~100nm,敲緊密度(tap density)為3.0g/cm3以上(本發明1)。 That is, the present invention is a silver fine particle characterized by an average particle diameter (D SEM ) of 30 to 100 nm and a tap density of 3.0 g/cm 3 or more (Invention 1).
又,本發明為如請求項1之銀微粒子,其BET比表面積為7.0m2/g以下(本發明2)。 Further, the present invention is the silver fine particles of claim 1, which has a BET specific surface area of 7.0 m 2 /g or less (Invention 2).
另外,本發明為如請求項1或2之銀微粒 子,其晶粒粒徑(Dx)為30nm以上(本發明3)。 Further, the present invention is the silver fine particles according to claim 1 or 2, which has a crystal grain size (D x ) of 30 nm or more (Invention 3).
又,本發明為如請求項1至3中任一項之銀 微粒子,其中銀微粒子表面之有機物殘留量為0.5~2.0重量%(本發明4)。 Further, the present invention is the silver according to any one of claims 1 to 3 The microparticles, wherein the residual amount of the organic substance on the surface of the silver fine particles is 0.5 to 2.0% by weight (Invention 4).
且,本發明為如請求項1至4中任一項之銀 微粒子,其在240℃之熱收縮率為2.0%以上(本發明5)。 Furthermore, the present invention is the silver according to any one of claims 1 to 4. The fine particles have a heat shrinkage ratio at 240 ° C of 2.0% or more (Invention 5).
又,本發明為一種導電性糊料,其包含如請 求項1至5中任一項之銀微粒子(本發明6)。 Moreover, the present invention is a conductive paste comprising, for example, The silver fine particles of any one of items 1 to 5 (Invention 6).
又,本發明為一種導電性膜,其係使用如請 求項6之導電性糊料而形成(本發明7)。 Moreover, the present invention is a conductive film which is used as such The conductive paste of Item 6 is formed (Invention 7).
另外,本發明為一種電子裝置,其具有如請 求項7之導電性膜(本發明8)。 In addition, the present invention is an electronic device having a request The conductive film of claim 7 (Invention 8).
且,本發明為一種銀微粒子之製造方法,其 特徵係於使用硝酸銀與高分子保護劑而調製水溶液(A液),與前述A液另外使還原劑與低分子保護劑溶解而調製水溶液(B液),將前述B液滴加於前述A液中,使還原析出所得之銀微粒子予以分離、洗淨、乾燥之銀微粒子之製造方法,將前述B液滴加於前述A液時之混合溶液 之溫度控制在40℃以下,同時以真空冷凍乾燥進行乾燥步驟(本發明9)。 Moreover, the present invention is a method of manufacturing silver microparticles, The method is characterized in that an aqueous solution (solution A) is prepared by using silver nitrate and a macromolecular protective agent, and the aqueous solution (solution B) is prepared by dissolving the reducing agent and the low molecular protection agent together with the liquid A, and the B liquid is added to the liquid A described above. In the method for producing silver fine particles obtained by separating, washing and drying the silver fine particles obtained by the precipitation, the mixed solution of the B liquid droplets added to the liquid A The temperature was controlled to be 40 ° C or lower while the drying step was carried out by vacuum freeze drying (Invention 9).
又,本發明為如請求項9之銀微粒子之製造 方法,其中真空冷凍乾燥前之含水物之含水率為30%以上(本發明10)。 Further, the present invention is the manufacture of silver fine particles as claimed in claim 9. The method wherein the moisture content of the hydrate before vacuum freeze-drying is 30% or more (Invention 10).
又,本發明為如請求項9或10之銀微粒子之 製造方法,其中所得之銀微粒子為如請求項1~5中任一項之銀微粒子(本發明11)。 Further, the present invention is a silver microparticle according to claim 9 or 10. The production method, wherein the silver fine particles obtained are the silver fine particles according to any one of claims 1 to 5 (Invention 11).
一般而言,有銀微粒子之粒子尺寸愈小則敲緊密度愈小之傾向,但本發明之銀微粒子之製造方法,儘管銀微粒子為前述平均粒徑(DSEM)為30~100nm之微粒子,但由於可獲得具有3.0g/cm3以上之高敲緊密度之銀微粒子,故適合作為低溫燒結性及電極或電路圖型中之填充性優異之銀微粒子之製造方法。 In general, the smaller the particle size of the silver fine particles, the smaller the tapping degree tends to be. However, in the method for producing the silver fine particles of the present invention, although the silver fine particles are fine particles having an average particle diameter (D SEM ) of 30 to 100 nm, However, since silver fine particles having a high knocking degree of 3.0 g/cm 3 or more are obtained, it is suitable as a method for producing silver fine particles excellent in low-temperature sinterability and filling property in an electrode or a circuit pattern.
且,本發明之銀微粒子,藉由上述製造方法,儘管所得銀微粒子為平均粒徑(DSEM)係30~100nm之微粒子,但由於具有3.0g/cm3以上之高敲緊密度,故適合作為於基板上形成之電極或電路圖型中之填充性優異之導電性糊料等之原料。 Further, in the silver fine particles of the present invention, although the obtained silver fine particles are fine particles having an average particle diameter (D SEM ) of 30 to 100 nm, they have a high knocking degree of 3.0 g/cm 3 or more, and are suitable for the silver fine particles. It is a raw material of a conductive paste or the like which is excellent in filling property in an electrode or a circuit pattern formed on a substrate.
若更詳細說明本發明之構成則係如下。 The structure of the present invention will be described in more detail below.
首先,針對本發明之銀微粒子加以敘述。 First, the silver fine particles of the present invention will be described.
本發明之銀微粒子之特徵為平均粒徑(DSEM) 為30~100nm,且敲緊密度為3.0g/cm3以上。 The silver fine particles of the present invention are characterized by an average particle diameter (D SEM ) of 30 to 100 nm and a knocking degree of 3.0 g/cm 3 or more.
本發明之銀微粒子之平均粒徑(DSEM)為 30~100nm,較好為35~95nm,更好為40~90nm。藉由使平均粒徑(DSEM)落在上述範圍,使利用其所得之電子裝置之微細化變容易。平均粒徑(DSEM)未達30nm時,銀微粒子具有之表面活性變高,為了安定地維持其微細粒徑而有必要附著大量有機物等因而欠佳。 The average particle diameter (D SEM ) of the silver fine particles of the present invention is 30 to 100 nm, preferably 35 to 95 nm, more preferably 40 to 90 nm. By setting the average particle diameter (D SEM ) within the above range, it is easy to refine the electronic device obtained by the above. When the average particle diameter (D SEM ) is less than 30 nm, the surface activity of the silver fine particles is high, and it is not preferable to adhere a large amount of organic substances in order to maintain the fine particle diameter stably.
本發明之銀微粒子之敲緊密度為3.0g/cm3以 上,較好為3.5g/cm3以上,更好為4.0g/cm3以上。敲緊密度未達3.0g/cm3時,以含該銀微粒子之導電糊料形成之微細配線難以提高銀微粒子之填充率,不利於電阻值之減低。銀微粒子之敲緊密度上限值為6.0g/cm3左右,更好為5.5g/cm3左右。 The knocking degree of the silver fine particles of the present invention is 3.0 g/cm 3 or more, preferably 3.5 g/cm 3 or more, more preferably 4.0 g/cm 3 or more. When the knocking degree is less than 3.0 g/cm 3 , it is difficult to increase the filling ratio of the silver fine particles by the fine wiring formed of the conductive paste containing the silver fine particles, which is disadvantageous in reducing the resistance value. The upper limit of the knocking degree of the silver fine particles is about 6.0 g/cm 3 , more preferably about 5.5 g/cm 3 .
本發明之銀微粒子之BET比表面積值較好為 7m2/g以下,更好為6m2/g以下。BET比表面積值超過7m2/g時,使用其所得之導電性糊料之黏度變高故較不佳。銀微粒子之BET比表面積值之下限值為1.5m2/g左右,更好為2.0m2/g左右。 The silver particles of the present invention is preferably a value of BET specific surface area 7m 2 / g or less, more preferably 6m 2 / g or less. When the BET specific surface area value exceeds 7 m 2 /g, the viscosity of the conductive paste obtained by using it becomes high, which is not preferable. The silver particles BET specific surface area value below the limit value is about 1.5m 2 / g, more preferably about 2.0m 2 / g.
本發明之銀微粒子之晶粒粒徑(Dx)較好為 30nm以上,更好為35~95nm,又更好為40~90nm。晶粒粒徑(Dx)未達30nm時,銀微粒子變不安定,即使在常溫下仍會開始發生部分燒結.熔融故不佳。 The crystal grain size (D x ) of the silver fine particles of the present invention is preferably 30 nm or more, more preferably 35 to 95 nm, and still more preferably 40 to 90 nm. When the grain size (D x ) is less than 30 nm, the silver particles become unstable, and partial sintering will start to occur even at normal temperature. Melting is not good.
本發明之銀微粒子之結晶化度[平均粒徑 (DSEM)與晶粒粒徑(Dx)之比(DSEM/Dx)]較好為2.7 以下,更好為2.5以下,又更好為2.3以下。結晶化度愈接近1,則愈顯示為單結晶。結晶化度超過2.7時,銀微粒子之熱收縮率提高,故會有由使用其所得之導電性糊料形成之微細配線自基材剝離,配線變細而成為高電阻之問題故不佳。 The degree of crystallization of the silver fine particles of the present invention [ratio of the average particle diameter (D SEM ) to the crystal grain size (D x ) (D SEM /D x )] is preferably 2.7 or less, more preferably 2.5 or less, and further Good for 2.3 or less. The closer the degree of crystallization is to 1, the more it appears as a single crystal. When the degree of crystallization exceeds 2.7, the thermal shrinkage rate of the silver fine particles is increased. Therefore, the fine wiring formed of the conductive paste obtained by using the conductive paste is peeled off from the substrate, and the wiring becomes fine and becomes a problem of high electrical resistance.
本發明之銀微粒子表面之有機物殘留量較好 為0.5~2.0重量%,更好為0.6~1.9重量%,又更好為0.7~1.8重量%。銀微粒子表面之有機物殘留量超過2.0重量%時,銀微粒子表面存在之有機物過多,因而損及低溫燒結性。且,未達0.5重量%時,對溶劑及樹脂之潤濕性下降,故損及使用其所得之導電性糊料之均勻分散性因而不佳。 The residual amount of organic substances on the surface of the silver microparticles of the invention is better It is 0.5 to 2.0% by weight, more preferably 0.6 to 1.9% by weight, still more preferably 0.7 to 1.8% by weight. When the residual amount of the organic substance on the surface of the silver fine particles exceeds 2.0% by weight, the amount of organic substances present on the surface of the silver fine particles is excessive, and the low-temperature sinterability is impaired. On the other hand, when it is less than 0.5% by weight, the wettability to the solvent and the resin is lowered, so that the uniform dispersibility of the conductive paste obtained by using it is impaired.
本發明之銀微粒子之熱收縮率在240℃之熱收 縮率較好為2.0%以上,更好為2.1%以上。一般,以含銀微粒子之導電性糊料形成之銀之塗膜在銀微粒子間會產生窄小間隙,藉由使該間隙消失可獲得更低電阻之銀塗膜,但本發明之銀微粒子因在240℃之熱收縮率高如2.0%以上,故以使用其所得之導電性糊料形成之塗膜之銀微粒子間之間隙容易埋填,故可使電阻值更為減低。 The heat shrinkage rate of the silver microparticles of the invention is 240 ° C The shrinkage ratio is preferably 2.0% or more, more preferably 2.1% or more. Generally, a silver coating film formed of a conductive paste containing silver fine particles generates a narrow gap between the silver fine particles, and a silver film having a lower resistance can be obtained by eliminating the gap, but the silver fine particle of the present invention Since the heat shrinkage rate at 240 ° C is as high as 2.0% or more, the gap between the silver fine particles of the coating film formed using the conductive paste obtained therefrom is easily buried, so that the electric resistance value can be further reduced.
本發明之銀微粒子之粒子形狀較好為球狀或 粒狀。 The particle shape of the silver microparticles of the present invention is preferably spherical or granular.
接著,針對本發明之銀微粒子之製造方法加 以描述。 Next, the method for producing silver microparticles of the present invention is added To describe.
本發明之銀微粒子可藉由在使用硝酸銀與高 分子保護劑而調製水溶液(A液),與前述A液另外使還原劑與低分子保護劑溶解而調製水溶液(B液),將前述B液滴加於前述A液中,使還原析出所得之銀微粒子予以分離.洗淨.乾燥之銀微粒子之製造方法中,將前述B液滴加於前述A液時之混合溶液之溫度控制在40℃以下,同時以真空冷凍乾燥進行乾燥步驟而獲得。 The silver microparticles of the present invention can be used by using silver nitrate and high The aqueous solution (solution A) is prepared by a molecular protection agent, and the aqueous solution (solution B) is prepared by dissolving the reducing agent and the low molecular protection agent together with the liquid A, and the B liquid droplet is added to the liquid A to cause precipitation reduction. Silver particles are separated. Wash. In the method for producing dry silver fine particles, the temperature of the mixed solution in which the B liquid droplet is added to the liquid A is controlled to 40 ° C or lower, and the drying step is carried out by vacuum freeze drying.
首先,使用硝酸銀與高分子保護劑調製水溶 液(A液)。本發明中之高分子保護劑較好為水溶性或水可溶性。且,較好具有酸價,且較好使用酸價為1mgKOH/g以上,更好為10mgKOH/g以上者。酸價之上限值可無特別限制的使用,但酸價為0mgKOH/g時,生成粒子尺寸大的銀粒子,故難以獲得100nm以下之微細銀微粒子。且,胺價較好為0mgKOH/g。使用具有胺價之高分子保護劑時,與硝酸銀混合時會生成銀之胺錯合物,無法完成還原反應或者還原反應需要極長之時間,同時因此獲得之銀微粒子為分佈差者故不佳。又,高分子保護劑可單獨使用,亦可併用兩種以上。 First, use silver nitrate and a polymer protective agent to prepare water-soluble Liquid (liquid A). The polymer protective agent in the present invention is preferably water-soluble or water-soluble. Further, it is preferred to have an acid value, and it is preferred to use an acid value of 1 mgKOH/g or more, more preferably 10 mgKOH/g or more. The upper limit of the acid value can be used without particular limitation. However, when the acid value is 0 mgKOH/g, silver particles having a large particle size are formed, so that it is difficult to obtain fine silver fine particles of 100 nm or less. Further, the amine value is preferably 0 mgKOH/g. When a polymer protective agent having an amine value is used, a silver amine complex is formed when mixed with silver nitrate, and it takes a very long time to complete the reduction reaction or the reduction reaction, and thus the silver fine particles obtained are poorly distributed, which is not preferable. . Further, the polymer protective agent may be used singly or in combination of two or more.
高分子保護劑之數平均分子量較好為1,000以 上,更好為1,000~150,000,又更好為5,000~100,000。 The number average molecular weight of the polymer protective agent is preferably 1,000. Preferably, it is 1,000 to 150,000, and more preferably 5,000 to 100,000.
另外,前述高分子保護劑可使用丙烯酸系共 聚物或聚氧伸烷基系樹脂等一般市售者,具體列舉為DISPERBYK-190、DISPERBYK-194、DISPERBYK-2015、 DISPERBYK-2090、DISPERBYK-2091、DISPERBYK-2095(日本BYK股份有限公司製造);AKM-0531、HKM-50A、AKM-1511-60、AFB-1521(日油股份有限公司製造)等。該等高分子保護劑可使用一種或組合兩種以上使用。 In addition, the above polymer protective agent can be used in combination with acrylic acid General commercial products such as polymers or polyoxyalkylene-based resins, specifically listed as DISPERBYK-190, DISPERBYK-194, DISPERBYK-2015, DISPERBYK-2090, DISPERBYK-2091, DISPERBYK-2095 (manufactured by BYK Co., Ltd., Japan); AKM-0531, HKM-50A, AKM-1511-60, AFB-1521 (manufactured by Nippon Oil Co., Ltd.), and the like. These polymer protective agents can be used singly or in combination of two or more.
高分子保護劑之添加量相對於銀微粒子較好 為1~10重量%,更好為1.5~8重量%。高分子保護劑之添加量未達1重量%時,所得銀微粒子之粒子尺寸變大故不佳。超過10重量%時因所得銀微粒子表面之有機物殘留量超過2.0重量%,故損及低溫燒結性而不佳。 The amount of the polymeric protective agent added is relatively good relative to the silver fine particles. It is 1 to 10% by weight, more preferably 1.5 to 8% by weight. When the amount of the polymer protective agent added is less than 1% by weight, the particle size of the obtained silver fine particles becomes large, which is not preferable. When the amount is more than 10% by weight, the residual amount of the organic substance on the surface of the obtained silver fine particles exceeds 2.0% by weight, so that the low-temperature sinterability is impaired.
本發明中之還原劑可使用水溶性或水可溶性 者,但聯胺、氫化硼鹼鹽、氫化鋰鋁、抗壞血酸、異抗壞血酸等由於還原力過強故不佳。就還原力方面而言,本發明中可較好地使用胺基醇類,更好為N,N-二甲基乙醇胺、N,N-二乙基乙醇胺、N,N-二乙基異丙醇胺、N-甲基二乙醇胺、N-乙基二乙醇胺、N-正丁基二乙醇胺、N-第三丁基二乙醇胺等具有三級胺之胺基醇。 The reducing agent in the present invention can be used in water solubility or water solubility. However, hydrazine, borohydride alkali salt, lithium aluminum hydride, ascorbic acid, erythorbic acid and the like are not preferable because the reducing power is too strong. In terms of reducing power, an amine alcohol can be preferably used in the present invention, more preferably N,N-dimethylethanolamine, N,N-diethylethanolamine, N,N-diethylisopropyl An amine-based alcohol having a tertiary amine such as an alcoholamine, N-methyldiethanolamine, N-ethyldiethanolamine, N-n-butyldiethanolamine or N-t-butyldiethanolamine.
還原劑之添加量相對於硝酸銀1莫耳較好還 原劑為2.0~5.0莫耳,更好為2.2~4.0莫耳。還原劑之添加量相對於硝酸銀1莫耳未達2.0莫耳時,還原反應無法充分地進行故不佳。 The amount of reducing agent added is better than that of silver nitrate. The original agent is 2.0 to 5.0 moles, more preferably 2.2 to 4.0 moles. When the amount of the reducing agent added is less than 2.0 mol per mol of silver nitrate, the reduction reaction is not sufficiently performed, which is not preferable.
接著,與前述A液另外使還原劑與低分子保 護劑溶解而調製水溶液(B液)。將低分子保護劑添加於含有硝酸銀之水溶液(A液)中調製水溶液時,低分子保 護劑會與硝酸銀反應,生成羧酸銀而使銀微粒子之收率下降,同時藉此獲得之銀微粒子為分佈差者故不佳。 Next, in addition to the aforementioned liquid A, the reducing agent and the low molecule are additionally protected. The protective agent is dissolved to prepare an aqueous solution (solution B). Low molecular protection when a low molecular weight protective agent is added to an aqueous solution containing silver nitrate (solution A) to prepare an aqueous solution The protective agent reacts with silver nitrate to form silver carboxylate to lower the yield of the silver fine particles, and at the same time, the silver fine particles obtained by this are poor in distribution.
本發明之低分子保護劑可使用碳數3~7之羧 酸。較好為丙酸、己酸及庚酸,更好為己酸及庚酸。低分子保護劑之碳鏈愈長,愈容易獲得敲緊密度更高之銀微粒子。低分子保護劑可單獨使用,亦可併用兩種以上。 The low molecular protection agent of the present invention can use a carboxyl group having 3 to 7 carbon atoms. acid. Preferred are propionic acid, caproic acid and heptanoic acid, more preferably caproic acid and heptanoic acid. The longer the carbon chain of the low molecular protection agent, the easier it is to obtain silver fine particles with a higher degree of knock. The low molecular weight protective agent may be used singly or in combination of two or more.
低分子保護劑之添加量相對於硝酸銀1莫耳 較好為低分子保護劑0.05~0.4莫耳,更好為0.1~0.35莫耳。低分子保護劑之添加量相對於硝酸銀1莫耳超過0.4莫耳時,會有生成之銀微粒子彼此凝聚之傾向故不佳。 The amount of low molecular protection agent added is 1 mol relative to silver nitrate Preferably, the low molecular protection agent is 0.05 to 0.4 moles, more preferably 0.1 to 0.35 moles. When the amount of the low molecular weight protecting agent added is more than 0.4 mol with respect to 1 mol of silver nitrate, the silver fine particles formed tend to aggregate with each other, which is not preferable.
溶解有還原劑與低分子保護劑之水溶液(B 液)滴加於使用硝酸銀與高分子保護劑調製之水溶液(A液)中進行混合反應。混合反應時之溫度若進行通常之溫度控制雖會上升至50℃以上,但本發明中,較好控制在25~40℃之範圍,更好為30~35℃之範圍。混合反應時之溫度超過40℃時,生成之銀微粒子之分佈容易變得不均故不佳。 An aqueous solution in which a reducing agent and a low molecular protective agent are dissolved (B The liquid is added dropwise to an aqueous solution (liquid A) prepared by using silver nitrate and a macromolecular protective agent to carry out a mixing reaction. The temperature at the time of the mixing reaction rises to 50 ° C or more although the temperature control is normally carried out, but in the present invention, it is preferably controlled in the range of 25 to 40 ° C, more preferably in the range of 30 to 35 ° C. When the temperature at the time of the mixing reaction exceeds 40 ° C, the distribution of the generated silver fine particles tends to be uneven and is not preferable.
滴加前述B液後,將反應溶液加熱至 60~80℃,進行攪拌而完成還原反應。反應溶液之加熱溫度較好為65~75℃。反應溶液之加熱溫度未達60℃時,直至完成還原反應需要極長之時間,故工業上不利。另外,加熱溫度超過80℃時,生成之銀微粒子彼此有凝聚之傾向故不佳。還原反應係以反應溶液之pH值成為一定時作為終點。還原反應較好儘可能緩慢地進行,就該方面而言, 低分子保護劑較好儘可能使用長鏈脂肪酸。 After adding the above liquid B, the reaction solution is heated to At 60 to 80 ° C, stirring is carried out to complete the reduction reaction. The heating temperature of the reaction solution is preferably from 65 to 75 °C. When the heating temperature of the reaction solution is less than 60 ° C, it takes a very long time until the reduction reaction is completed, which is industrially disadvantageous. Further, when the heating temperature exceeds 80 ° C, the silver fine particles formed tend to aggregate with each other, which is not preferable. The reduction reaction is used as an end point when the pH of the reaction solution becomes constant. The reduction reaction is preferably carried out as slowly as possible, in this respect, Low molecular weight protectants are preferably used as long as possible with long chain fatty acids.
使還原反應後之反應溶液重複進行傾析與水 洗直至上澄液之導電度成為50μS/cm以下為止,並真空冷凍乾燥含所得銀微粒子之含水物,隨後,以常用方法粉碎可獲得本發明之銀微粒子。未進行真空冷凍乾燥,而使用通常之乾燥機進行乾燥時,銀微粒子成為巨大塊體而無法取出,於隨後之粉碎處理變得極為繁複,同時變成須對銀微粒子施以必要以上之剪力。因此,所得粒子粗大化,敲緊密度下降,故無法獲得本發明目的之銀微粒子粉末。 The reaction solution after the reduction reaction is repeatedly subjected to decantation and water After washing until the conductivity of the supernatant liquid becomes 50 μS/cm or less, the hydrate containing the obtained silver fine particles is vacuum-dried, and then the silver fine particles of the present invention are obtained by pulverization by a usual method. When vacuum freeze-drying is not performed, when it is dried by a usual dryer, the silver fine particles become a large block and cannot be taken out, and the subsequent pulverization treatment becomes extremely complicated, and at the same time, it is necessary to apply a necessary shear force to the silver fine particles. Therefore, the obtained particles are coarsened and the knocking degree is lowered, so that the silver fine particle powder of the object of the present invention cannot be obtained.
真空冷凍乾燥係將含銀微粒子之含水物放入 乾燥機中後,減壓至品溫成為-40~-10℃,隨後,升溫至40℃左右後保持2小時以上而進行。 Vacuum freeze-drying is to place the hydrate containing silver particles After the dryer, the pressure was reduced until the product temperature became -40 to -10 ° C, and then the temperature was raised to about 40 ° C and maintained for 2 hours or more.
進行真空冷凍乾燥時包含銀微粒子之含水物 之含水率較好為30%以上,更好為35~80%,又更好為40~70%。含水率未達30%時,即使進行真空冷凍乾燥,與上述之使用通常乾燥器之情況同樣,銀微粒子成為巨大塊體而無法取出,所得粒子粗大化,敲緊密度下降,故無法獲得本發明目的之銀微粒子粉末。 a hydrate containing silver particles when vacuum freeze-dried The water content is preferably 30% or more, more preferably 35 to 80%, and even more preferably 40 to 70%. When the water content is less than 30%, even if vacuum freeze-drying is carried out, as in the case of using a normal dryer as described above, the silver fine particles become a large block and cannot be taken out, and the obtained particles are coarsened, and the knocking degree is lowered, so that the present invention cannot be obtained. Silver microparticle powder for the purpose.
以上述銀微粒子之製造方法,可製造本發明 1~5所記載之銀微粒子。亦即,作為本發明1~5所記載之銀微粒子之較佳製造方法,列舉有上述之製造方法(本發明9及10)。 The present invention can be produced by the above method for producing silver fine particles Silver microparticles as described in 1~5. In other words, as a preferred method for producing the silver fine particles described in the first to fifth aspects of the invention, the above-described production methods (inventions 9 and 10) are exemplified.
接著,針對含本發明之銀微粒子之導電性糊 料加以敘述。 Next, the conductive paste containing the silver fine particles of the present invention It is described.
本發明之導電性糊料可為燒成型糊料及聚合 物型糊料之任一形態,於燒成型糊料之情況,係由本發明銀微粒子及玻璃粉(glass frit)所組成,亦可視需要調配黏結劑樹脂、溶劑等其他成分。又,於聚合物型糊料之情況,係由本發明之銀微粒子及溶劑組成,且可視需要調配黏結劑樹脂、硬化劑、分散劑、流變調整劑等其他成分。 The conductive paste of the present invention may be a calcined paste and polymerized Any form of the paste of the type is composed of the silver fine particles and the glass frit of the present invention in the case of firing the paste, and other components such as a binder resin and a solvent may be blended as needed. Further, in the case of the polymer type paste, it is composed of the silver fine particles and the solvent of the present invention, and other components such as a binder resin, a curing agent, a dispersing agent, and a rheology adjusting agent may be blended as needed.
至於黏結劑樹脂可使用該領域中習知者,列 舉為例如乙基纖維素、硝基纖維素等纖維素系樹脂,聚酯樹脂、胺基甲酸酯改質之聚酯樹脂、環氧改質之聚酯樹脂、丙烯酸改質之聚酯等各種改質聚酯樹脂、聚胺基甲酸酯樹脂、氯化乙烯.乙酸乙烯酯共聚物、丙烯酸樹脂、環氧樹脂、酚樹脂、醇酸樹脂、丁醛樹脂、聚乙烯醇、聚醯亞胺、聚醯胺醯亞胺等。該等黏結劑樹脂可單獨或併用兩種以上。 As for the binder resin, a person skilled in the art can be used. For example, a cellulose resin such as ethyl cellulose or nitrocellulose, a polyester resin, a urethane-modified polyester resin, an epoxy-modified polyester resin, an acrylic modified polyester, or the like. Various modified polyester resin, polyurethane resin, vinyl chloride. Vinyl acetate copolymer, acrylic resin, epoxy resin, phenol resin, alkyd resin, butyral resin, polyvinyl alcohol, polyimide, polyamidimide, and the like. These binder resins may be used alone or in combination of two or more.
至於溶劑可使用該領域中習知者,列舉為例 如十四烷、甲苯、二甲苯、乙基苯、二乙基苯、異丙基苯、戊基苯、對-異丙基甲苯(cymene)、四氫萘及石油系芳香族烴混合物等之烴系溶劑;乙二醇單乙基醚、乙二醇單丁基醚、丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單正丁基醚、丙二醇單第三丁基醚、二乙二醇單乙基醚、二乙二醇單丁基醚、二丙二醇單甲基醚、二丙二醇單丁基醚、三丙二醇單甲基醚等醚類,或二醇醚系溶劑;乙二醇單甲基醚乙酸酯、乙二醇單乙基醚乙酸酯、乙二醇單丁基醚乙酸酯、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸 酯等之二醇酯系溶劑;甲基異丁基酮、環己酮等之酮系溶劑;松油醇(terpineol)、沉香醇(linalool)、香葉醇(geraniol)、香茅醇(citronellol)等之萜烯醇(terpene alcohol);正丁醇、第二丁醇、第三丁醇等之醇系溶劑;乙二醇、二乙二醇等之二醇系溶劑;γ-丁內酯及水等。溶劑可單獨使用或併用兩種以上。 As the solvent can be used, it is exemplified in the art. Such as tetradecane, toluene, xylene, ethylbenzene, diethylbenzene, cumene, pentylbenzene, p-isopropyl cymene, tetrahydronaphthalene and petroleum-based aromatic hydrocarbon mixtures, etc. Hydrocarbon solvent; ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol mono-n-butyl ether, propylene glycol mono-telebutyl ether, diethylene glycol An ether such as alcohol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monobutyl ether or tripropylene glycol monomethyl ether, or a glycol ether solvent; ethylene glycol single Methyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate a glycol ester solvent such as an ester; a ketone solvent such as methyl isobutyl ketone or cyclohexanone; terpineol, linalool, geraniol, citronellol Or a terpene alcohol; an alcohol solvent such as n-butanol, a second butanol or a third butanol; a glycol solvent such as ethylene glycol or diethylene glycol; and γ-butyrolactone; And water, etc. The solvent may be used singly or in combination of two or more.
導電性糊料中之銀微粒子之含量係依據用途 而不同,但於例如配線形成用途之情況等較好儘可能接近100重量%。 The content of silver microparticles in the conductive paste is based on the use However, it is preferably as close as possible to 100% by weight as much as possible, for example, in the case of wiring formation.
本發明之導電性糊料可藉由使用擂潰機、罐 研磨機、三軸輥研磨機、旋轉式混合機、二軸混練機等之各種混練機、分散機,使各成分混合.分散而獲得。 The conductive paste of the present invention can be used by using a crushing machine or a can Grinding machine, three-axis roller grinder, rotary mixer, two-axis kneading machine and other mixing machines, dispersing machines, so that the components are mixed. Obtained by dispersion.
本發明之導電性糊料可使用於網版印刷、噴 墨法、凹版印刷、轉印印刷、輥塗、流動塗佈、噴霧塗佈、旋轉塗佈、浸漬、刮板塗佈、鍍敷等各種塗佈方法中。 The conductive paste of the invention can be used for screen printing and spraying Various coating methods such as ink method, gravure printing, transfer printing, roll coating, flow coating, spray coating, spin coating, dipping, blade coating, and plating.
另外,本發明之導電性糊料可使用作為FPD (平面面板顯示器)、太陽能電池、有機EL等之電極形成或LSI基板之配線形成,進而可使用作為微細凹槽、貫穿孔、接觸孔之埋入等之配線形成材料。又,可較好地用於層合陶瓷電容器或層合感應器之內部電極形成用等之在高溫之燒成用途中,當然由於可低溫燒成故亦適合作為於可撓性基板或IC卡、其他基板上之配線形成材料及電極形成材料。又,亦可作為導電性被膜使用於電磁波遮蔽膜 或紅外線反射遮蔽等。在電子安裝中亦可使用作為零件安裝用接合材。 In addition, the conductive paste of the present invention can be used as an FPD (Flat panel display), electrode formation of a solar cell, an organic EL, or the like, or wiring of an LSI substrate, and a wiring forming material such as a fine groove, a through hole, or a buried hole of a contact hole can be used. Moreover, it can be suitably used for high-temperature baking applications for forming an internal electrode of a laminated ceramic capacitor or a laminated inductor, and of course, it can be suitably used as a flexible substrate or an IC card because it can be fired at a low temperature. And wiring forming materials and electrode forming materials on other substrates. Moreover, it can also be used as a conductive film for an electromagnetic wave shielding film. Or infrared reflection shielding. It is also possible to use a bonding material for component mounting in electronic mounting.
本發明之重點為本發明之銀微粒子具有優異之熱收縮性,同時在基板上形成之電極或電路圖型中之填充性優異之事實。 The present invention is directed to the fact that the silver fine particles of the present invention have excellent heat shrinkability and are excellent in filling property in an electrode or a circuit pattern formed on a substrate.
關於本發明之銀微粒子在基板上形成之電極 或電路圖型中之填充性優異之理由,本發明人等認為係因為儘管所得銀微粒子為平均粒徑(DSEM)係30~100nm之微粒子,但藉由具有3.0g/cm3以上之高敲緊密度者。亦即,由含敲緊密度低之銀微粒子之導電糊料所形成之微細配線難以提高銀微粒子之填充率,不利於電阻值之減低,但銀微粒子一般會有粒子尺寸愈小敲緊密度愈小之傾向,故難以滿足粒子尺寸與敲緊密度二者之特性。然而,本發明之銀微粒子由於為平均粒徑(DSEM)為30~100nm之微粒子,同時具有3.0g/cm3以上之高敲緊密度,故認為可獲得在基板上形成之電極或電路圖型中之優異填充性者。 The reason why the silver fine particles of the present invention are excellent in the filling property in the electrode or the circuit pattern formed on the substrate is considered to be because the obtained silver fine particles are microparticles having an average particle diameter (D SEM ) of 30 to 100 nm. By having a high knockness of 3.0 g/cm 3 or more. That is, it is difficult to increase the filling ratio of the silver fine particles by the fine wiring formed of the conductive paste containing the silver fine particles having a low knocking degree, which is disadvantageous for the reduction of the electric resistance value, but the silver fine particles generally have a smaller particle size and a tighter degree of tightening. Small tendency, it is difficult to meet the characteristics of both particle size and knock tightness. However, since the silver fine particles of the present invention are fine particles having an average particle diameter (D SEM ) of 30 to 100 nm and have a high knocking degree of 3.0 g/cm 3 or more, it is considered that an electrode or a circuit pattern formed on a substrate can be obtained. Excellent filling in the middle.
以下列示本發明之實施例,具體說明本發明,但本發明並不限於以下之實施例。 The invention is specifically illustrated by the following examples of the invention, but the invention is not limited to the examples below.
銀微粒子之平均粒徑係使用掃描型電子顯微鏡照相「S-4800」(HITACHI製造)拍攝粒子之照片,使 用該照片對100個以上之粒子測定粒徑,算出其平均值作為平均粒徑(DSEM)。 The average particle diameter of the silver microparticles was photographed using a scanning electron microscope photograph "S-4800" (manufactured by HITACHI), and the particle diameter of 100 or more particles was measured using the photograph, and the average value was calculated as an average particle diameter (D). SEM ).
銀微粒子之比表面積係使用「Monosorb MS- 11」(Quantachrome股份有限公司製造),以BET法測定之值表示。 The specific surface area of silver particles is "Monosorb MS- 11 (manufactured by Quantachrome Co., Ltd.), expressed by the value measured by the BET method.
銀微粒子之敲緊密度(ρt)係使用振盪比重測 定器(藏持科學機械製作所(股)),使粉末落下於25ml之敲緊容器中,填充至容器滿杯後,以敲擊長度25mm進行敲緊600次而測定。 The knocking degree of silver particles (ρt) is measured by oscillating specific gravity The device was placed in a 25 ml tight-fitting container, filled into a full cup of the container, and tapped for 600 times with a tapping length of 25 mm.
銀微粒子之有機物殘留量係使用熱分析裝置 (Seiko Instruments Inc.製造EXSTAR 6000 TG/DTA6300),在使乾燥空氣以300ml/min流動之條件下,以10℃/min自室溫(30℃)升溫至550℃,且自加熱開始(30℃)之樣品量減去直至結束減量之時點(銀微粒子開始氧化之時點(雖依據樣品而不同,但為250~300℃)之樣品量的量表示。 The residual amount of organic matter of silver particles is a thermal analysis device (EXSTAR 6000 TG/DTA6300 manufactured by Seiko Instruments Inc.) was heated from room temperature (30 ° C) to 550 ° C at 10 ° C/min under conditions of flowing dry air at 300 ml/min, and started from heating (30 ° C). The amount of the sample is subtracted until the end of the amount of reduction (the amount of the sample at the time when the silver fine particles start to oxidize (although depending on the sample, but 250 to 300 ° C) is expressed.
銀微粒子之晶粒粒徑(DX)係使用X射線繞 射裝置「RINT2500」(RIGAKU股份有限公司製造),以Cu之Kα線作為線源求得面指數(1,1,1)面之波峰之半值寬,且由Scherrer之式計算晶粒粒徑。 The grain size (D X ) of the silver fine particles was obtained by using an X-ray diffraction device "RINT 2500" (manufactured by RIGAKU Co., Ltd.), and the surface index (1, 1, 1) was obtained by using the Kα line of Cu as a line source. The half value of the peak is wide, and the grain size is calculated by Scherrer's formula.
銀微粒子之結晶化度係以平均粒徑(DSEM) 與晶粒粒徑(DX)之比(DSEM/DX)表示。 The degree of crystallinity of the silver fine particles is expressed by the ratio of the average particle diameter (D SEM ) to the crystal grain size (D X ) (D SEM /D X ).
銀微粒子之熱收縮率係使用熱機械分析裝置 「Thermo Plus2 TMA8310」(RIGAKU股份有限公司製 造),以升溫速度10℃/分鐘自30~300℃加熱以成為高度5mm之顆粒之方式放入直徑4mm之模具中,對銀微粒子施以1,225.8N之荷重而製作之顆粒狀之銀微粒子試料,測定試料長度,根據下述數1計算出之值。 Thermal shrinkage of silver particles using a thermomechanical analyzer "Thermo Plus2 TMA8310" (made by RIGAKU Co., Ltd.) Manufactured into a granular silver microparticle sample prepared by applying a temperature of 5 ° C / min from 30 to 300 ° C to form a particle having a height of 5 mm into a mold having a diameter of 4 mm and applying a load of 1,225.8 N to the silver microparticles. The length of the sample was measured, and the value was calculated according to the following number 1.
240℃之熱收縮率(%)={(30℃之試料長度-240℃之試料長度)/30℃之試料長度}×100 Thermal shrinkage at 240 ° C (%) = {(sample length of sample at 30 ° C - length of sample at 240 ° C) / sample length of 30 ° C} × 100
導電性塗膜之比電阻係分別針對將後述之導電性糊料塗佈於聚醯亞胺膜上,在120℃預乾燥後,於150℃加熱硬化10分鐘後,浸漬於1莫耳之HCl水溶液中20秒,經水洗後,再度在150℃加熱乾燥1分鐘而獲得之導電性膜,使用4端子電阻測定裝置「ROLESTA GP/MCP-T600」(三菱化學分析股份有限公司製造)測定,由薄片電阻與膜厚算出比電阻。 The specific resistance of the conductive coating film was applied to a polyimide film by applying a conductive paste to be described later, and after pre-drying at 120 ° C, it was heat-cured at 150 ° C for 10 minutes, and then immersed in 1 mol of HCl. The conductive film obtained by heating and drying at 150 ° C for 1 minute in an aqueous solution for 20 seconds was measured by a 4-terminal resistance measuring device "ROLESTA GP/MCP-T600" (manufactured by Mitsubishi Chemical Corporation). The sheet resistance and the film thickness were calculated as specific resistance.
在60L容器中添加硝酸銀2.8kg與水25.2L及高分子保護劑「DISPERBYK-190」(商品名:日本BYK股份有限公司製造)(酸價10mgKOH/kg,胺價0mgKOH/kg)89g,經混合.攪拌調製A液。另外,於50L容器中添加N,N-二甲基乙醇胺4.41kg與作為低分子保護劑之庚酸214.5g,進行混合.攪拌後,添加水18.8L進行混合.攪拌,調製B液。 In a 60 L container, 2.8 kg of silver nitrate and 25.2 L of water and a polymer protective agent "DISPERBYK-190" (trade name: manufactured by Japan BYK Co., Ltd.) (acid value: 10 mgKOH/kg, amine price: 0 mgKOH/kg), 89 g, were mixed. . Stir the preparation of solution A. In addition, 4.41 kg of N,N-dimethylethanolamine and 214.5 g of heptanoic acid as a low molecular protection agent were added to a 50 L vessel for mixing. After stirring, add 18.8L of water for mixing. Stir and prepare solution B.
接著,一面將混合溶液之溫度控制在32℃以 下一面將B液滴加於A液中,升溫至70℃後攪拌3小時,靜置30分鐘使固體成分沉降。去除上澄液後,使用純水洗淨,重複傾析.水洗直到上澄液之導電度成為50μS/cm以下為止。 Next, the temperature of the mixed solution was controlled at 32 ° C while On the lower side, B liquid was added to the A liquid, and the temperature was raised to 70 ° C, and the mixture was stirred for 3 hours, and allowed to stand for 30 minutes to precipitate a solid component. After removing the supernatant, wash it with pure water and repeat the decantation. Wash until the conductivity of the supernatant is 50 μS/cm or less.
將所得含銀微粒子之含水物放入真空冷凍乾 燥機中,使真空度達10Pa左右以品溫為-30℃自我凍結。 隨後,使真空度維持在10Pa之狀態升溫至40℃(品溫為30℃左右),保持該狀態2小時後,經粉碎獲得實施例1-1之銀微粒子。 The hydrate containing the silver-containing microparticles is placed in a vacuum freeze-dried In the dryer, the degree of vacuum is about 10 Pa and the temperature is -30 ° C to self-freeze. Subsequently, the temperature was raised to 40 ° C in a state where the degree of vacuum was maintained at 10 Pa (the product temperature was about 30 ° C), and after maintaining this state for 2 hours, the silver fine particles of Example 1-1 were obtained by pulverization.
所得銀微粒子之粒子形狀為粒狀、平均粒徑 (DSEM)為75nm,結晶粒徑(Dx)為45.2nm,結晶化度(DSEM/Dx)為1.7,敲緊密度(ρt)為4.55g/cm3,BET比表面積為3.1m2/g,有機物殘留量為1.36重量%,熱收縮率為2.58%。 The particle shape of the obtained silver fine particles was granular, the average particle diameter (D SEM ) was 75 nm, the crystal grain size (D x ) was 45.2 nm, the degree of crystallinity (D SEM /D x ) was 1.7, and the knocking degree (ρt) was obtained. The content was 4.55 g/cm 3 , the BET specific surface area was 3.1 m 2 /g, the residual amount of organic matter was 1.36 wt%, and the heat shrinkage ratio was 2.58%.
對實施例1A-1之銀微粒子100重量份添加聚酯樹脂11.0重量份及硬化劑1.4重量份,添加二乙二醇單乙基醚以使導電性糊料中之銀微粒子之含量成為70wt%,使用自轉.公轉混練機「AWATORY練太郎ARE-310」(THINKY公司製造,註冊商標)進行預混合後,使用三軸輥進行均勻混練.分散處理,獲得導電性糊料。 To 100 parts by weight of the silver fine particles of Example 1A-1, 11.0 parts by weight of a polyester resin and 1.4 parts by weight of a curing agent were added, and diethylene glycol monoethyl ether was added so that the content of silver fine particles in the conductive paste became 70% by weight. , use rotation. The remixing machine "AWATORY ritaro ARE-310" (manufactured by THINKY Co., Ltd., registered trademark) was premixed and then uniformly kneaded using a triaxial roller. Dispersion treatment to obtain a conductive paste.
將上述獲得之導電性糊料塗佈於膜厚50μm之 聚醯亞胺膜上,在120℃預乾燥後,在150℃加熱硬化10分鐘後,浸漬於1莫耳之HCl水溶液中20秒,經水洗後,再度於150℃加熱乾燥1分鐘,獲得導電性塗膜。 The conductive paste obtained above was applied to a film thickness of 50 μm. On the polyimine film, after pre-drying at 120 ° C, heat-hardening at 150 ° C for 10 minutes, immersed in 1 mol of HCl aqueous solution for 20 seconds, washed with water, and then dried at 150 ° C for 1 minute, to obtain electricity. Sex film.
所得導電性塗膜之比電阻為7.3μΩ.cm。 The specific resistance of the obtained conductive coating film is 7.3 μΩ. Cm.
藉由改變銀微粒子之各種生成條件,獲得銀微粒子。 Silver fine particles are obtained by changing various generation conditions of silver fine particles.
此時之製造條件示於表1,所得銀微粒子之諸特性示於表2。 The manufacturing conditions at this time are shown in Table 1, and the properties of the obtained silver fine particles are shown in Table 2.
比較例1A-2:特開2010-229544(實施例1之追加試驗) Comparative Example 1A-2: JP-A-2010-229544 (additional test of Example 1)
將硝酸銀66.8g、具有羧基之作為凝聚助劑之乙酸10g、作為高分子分散劑之具有羧基之高分子分散劑「DISPERBYK-190」(商品名:日本BYK股份有限公司製造)2.0g投入離子交換水100g中,劇烈攪拌。於其中緩慢添加N,N-二甲基乙醇胺100g後,使反應溶液升溫至60℃。以不使液溫下降至50℃之程度在設定於70℃之水浴中加熱攪拌2小時。1小時後,以灰色沉澱物獲得銀膠體粒子凝聚體。 66.8 g of silver nitrate, 10 g of acetic acid having a carboxyl group as an agglomeration aid, and 2.0 g of a polymer dispersant "DISPERBYK-190" (trade name: manufactured by Japan BYK Co., Ltd.) as a polymer dispersant were put into ion exchange. In 100 g of water, stir vigorously. After 100 g of N,N-dimethylethanolamine was slowly added thereto, the reaction solution was heated to 60 °C. The mixture was heated and stirred for 2 hours in a water bath set at 70 ° C without lowering the liquid temperature to 50 ° C. After 1 hour, silver colloidal particle agglomerates were obtained as a gray precipitate.
接著,去除沉澱有銀膠體粒子凝聚體之反應溶液之上澄液,以離子交換水稀釋。靜置後,去除上澄液,以甲醇進一步稀釋。再度靜置後,去除上澄液,以甲醇稀釋。隨後,以安裝膜過濾器(ADVENTECH公司製造,孔徑0.5μm)之加壓過濾機回收銀膠體粒子凝聚體。 所得銀膠體粒子凝聚體之諸特性示於表2。 Next, the supernatant solution on which the silver colloidal particle agglomerates were precipitated was removed, and diluted with ion-exchanged water. After standing, the supernatant was removed and further diluted with methanol. After standing again, the supernatant was removed and diluted with methanol. Subsequently, silver colloidal particle agglomerates were collected by a pressure filter equipped with a membrane filter (manufactured by ADVENTECH Co., Ltd., pore size: 0.5 μm). The properties of the obtained silver colloidal particle agglomerates are shown in Table 2.
比較例1A-3:特開2009-120949(實施例1之追加試驗) Comparative Example 1A-3: JP-A-2009-120949 (additional test of Example 1)
於1L燒杯之反應槽中饋入水273g,自反應槽下部以500mL/分鐘之流量使氮氣流過600秒以去除殘留之氧後,自反應槽之上部以500mL/分鐘之流量供給氮氣,使反應槽中成為氮氣環境。攪拌棒之轉速調整為280至320rpm,以使反應槽內之溶液溫度成為60℃之方式進行溫度調整。 273 g of water was fed into a reaction tank of a 1 L beaker, and nitrogen gas was flowed through the lower portion of the reaction vessel at a flow rate of 500 mL/min for 600 seconds to remove residual oxygen, and then nitrogen gas was supplied from the upper portion of the reaction vessel at a flow rate of 500 mL/min to cause a reaction. The tank becomes a nitrogen atmosphere. The rotation speed of the stirring bar was adjusted to 280 to 320 rpm, and the temperature was adjusted so that the temperature of the solution in the reaction tank became 60 °C.
將氨水(以氨計含30質量%)7.5g投入反應槽中後,攪拌1分鐘使液體均勻,接著,添加作為保護劑之己酸7.5g(相對於銀相當於2.01莫耳),攪拌10分鐘以使保護劑溶解。隨後,添加20.9g之作為還原劑之50重量%聯胺水合物水溶液。 7.5 g of ammonia water (30% by mass in terms of ammonia) was placed in the reaction vessel, and the mixture was stirred for 1 minute to make the liquid uniform. Then, 7.5 g of hexanoic acid (corresponding to 2.01 mol of silver) as a protective agent was added, and the mixture was stirred. Minutes to dissolve the protective agent. Subsequently, 20.9 g of a 50% by weight aqueous solution of hydrazine hydrate as a reducing agent was added.
於另一容器中使硝酸銀結晶36g溶解於水175g中準備硝酸銀水溶液,以此作為原料液。又,硝酸銀水溶液係與反應槽內之溶液同樣進行溫度調整至60℃。 In a separate container, 36 g of silver nitrate crystals were dissolved in 175 g of water to prepare an aqueous solution of silver nitrate, which was used as a raw material liquid. Further, the aqueous silver nitrate solution was adjusted to a temperature of 60 ° C in the same manner as the solution in the reaction tank.
隨後,以一次添加將原料液添加於還原液中,進行還原反應。連續進行攪拌,於該狀態直接熟成10分鐘。隨後,停止攪拌,經過濾.水洗步驟、乾燥步驟,獲得微小銀粒子塊。所得微小銀粒子塊之諸特性示於表2。 Subsequently, the raw material liquid is added to the reducing liquid in a single addition to carry out a reduction reaction. Stirring was continued, and the mixture was directly cooked for 10 minutes in this state. Then, stop stirring and filter. The water washing step and the drying step obtain a block of tiny silver particles. The characteristics of the obtained minute silver particle pieces are shown in Table 2.
除分別改變銀微粒子之種類以外,餘依據前述實施例2A-1之導電性塗料之製作方法製造導電性塗料及導電性膜。 In addition to the type of the silver fine particles, the conductive paint and the conductive film were produced in accordance with the method for producing a conductive paint of the above Example 2A-1.
此時之製造條件及所得導電性塗膜之諸特性示於表3。 The production conditions at this time and the properties of the obtained conductive coating film are shown in Table 3.
在60L容器中添加硝酸銀2.8kg與水25.2L及高分子保護劑「DISPERBYK-190」(商品名:日本BYK股份有限公司製造)(酸價10mgKOH/kg,胺價0mgKOH/kg)92g,經混合.攪拌調製A液。另外,於50L容器中添加N,N-二甲基乙醇胺4.41kg與作為低分子保護劑之庚酸214.5g,進行混合.攪拌後,添加水18.8L進行混合.攪 拌,調製B液。 In a 60 L container, 2.8 kg of silver nitrate and 25.2 L of water and a polymer protective agent "DISPERBYK-190" (trade name: manufactured by Japan BYK Co., Ltd.) (acid value: 10 mgKOH/kg, amine price: 0 mgKOH/kg) 92 g were added and mixed. . Stir the preparation of solution A. In addition, 4.41 kg of N,N-dimethylethanolamine and 214.5 g of heptanoic acid as a low molecular protection agent were added to a 50 L vessel for mixing. After stirring, add 18.8L of water for mixing. stir Mix and modulate liquid B.
接著,一面控制混合溶液之溫度為35℃以下 一面將B液滴加於A液中,升溫至70℃後攪拌3小時,靜置30分鐘使固體成分沉降。去除上澄液後,使用純水洗淨,重複傾析.水洗直至上澄液之導電度成為50μS/cm以下為止。 Next, while controlling the temperature of the mixed solution to be below 35 ° C B liquid was added to the A liquid, and the temperature was raised to 70 ° C, and the mixture was stirred for 3 hours, and allowed to stand for 30 minutes to precipitate a solid component. After removing the supernatant, wash it with pure water and repeat the decantation. Wash until the conductivity of the supernatant is 50 μS/cm or less.
將所得含銀微粒子之含水率55%之含水物放 入真空冷凍乾燥機中,使真空度達10Pa左右以品溫為-30℃自身凍結。隨後,使真空度維持在10Pa之狀態升溫至40℃(品溫為30℃左右),保持該狀態2小時後,經粉碎獲得實施例1B-1之銀微粒子。 The obtained hydrate containing 55% of the water content of the silver microparticles is placed Into the vacuum freeze dryer, the vacuum is about 10Pa, and the product temperature is -30 °C to freeze itself. Subsequently, the temperature was raised to 40 ° C while maintaining the degree of vacuum at 10 Pa (the product temperature was about 30 ° C), and after maintaining this state for 2 hours, the silver fine particles of Example 1B-1 were obtained by pulverization.
所得銀微粒子之粒子形狀為粒狀,平均粒徑 (DSEM)為72nm,結晶粒徑(Dx)為41.8nm,結晶化度(DSEM/Dx)為1.7,敲緊密度(ρt)為4.59g/cm3,BET比表面積為3.5m2/g,有機物殘留量為1.37重量%,熱收縮率為2.63%。 The obtained silver fine particles have a granular shape, an average particle diameter (D SEM ) of 72 nm, a crystal grain size (D x ) of 41.8 nm, a crystallinity (D SEM /D x ) of 1.7, and a knocking degree (ρt). The content was 4.59 g/cm 3 , the BET specific surface area was 3.5 m 2 /g, the residual amount of organic matter was 1.37 wt%, and the heat shrinkage ratio was 2.63%.
對實施例1B-1之銀微粒子100重量份添加聚酯樹脂11.0重量份及硬化劑1.4重量份,添加二乙二醇單乙基醚以使導電性糊料中之銀微粒子含量成為70wt%,使用自轉.公轉混練機「AWATORY練太郎ARE-310」(THINKY公司製造,註冊商標)進行預混合後,使用三軸輥進行均勻混練.分散處理,獲得導電性糊料。 To 100 parts by weight of the silver fine particles of Example 1B-1, 11.0 parts by weight of a polyester resin and 1.4 parts by weight of a curing agent were added, and diethylene glycol monoethyl ether was added to make the content of silver fine particles in the conductive paste 70% by weight. Use rotation. The remixing machine "AWATORY ritaro ARE-310" (manufactured by THINKY Co., Ltd., registered trademark) was premixed and then uniformly kneaded using a triaxial roller. Dispersion treatment to obtain a conductive paste.
將上述獲得之導電性糊料塗佈於膜厚50μm之 聚醯亞胺膜上,在120℃預乾燥後,於150℃加熱硬化10分鐘後,浸漬於1莫耳之HCl水溶液中20秒,經水洗後,再度以150℃加熱乾燥1分鐘,獲得導電性塗膜。 The conductive paste obtained above was applied to a film thickness of 50 μm. On the polyimide film, after pre-drying at 120 ° C, heat-hardening at 150 ° C for 10 minutes, immersed in a 1 molar aqueous solution of HCl for 20 seconds, washed with water, and then dried by heating at 150 ° C for 1 minute to obtain electricity. Sex film.
所得導電性塗膜之比電阻為7.5μΩ.cm。 The specific resistance of the obtained conductive coating film is 7.5 μΩ. Cm.
藉由改變銀微粒子之各種生成條件,獲得銀微粒子。 Silver fine particles are obtained by changing various generation conditions of silver fine particles.
此時之製造條件示於表4,所得銀微粒子之諸特性示於表5。 The manufacturing conditions at this time are shown in Table 4, and the characteristics of the obtained silver fine particles are shown in Table 5.
與上述比較例1A-2相同。所得銀膠體粒子之凝聚體之諸特性示於表5。 The same as Comparative Example 1A-2 described above. The properties of the aggregates of the obtained silver colloidal particles are shown in Table 5.
與上述比較例1A-3相同。所得微小銀粒子塊之諸特性示於表5。 The same as Comparative Example 1A-3 described above. The characteristics of the obtained minute silver particle block are shown in Table 5.
除分別改變銀微粒子之種類以外,餘依據前述實施例2B-1之導電性塗料之製作方法製造導電性塗料及導電性膜。 In addition to the type of the silver fine particles, the conductive paint and the conductive film were produced in accordance with the method for producing a conductive paint of the above Example 2B-1.
此時之製造條件及所得導電性塗膜之諸特性示於表6。 The production conditions at this time and the properties of the obtained conductive coating film are shown in Table 6.
一般,銀微粒子之尺寸愈小有敲緊密度愈小之傾向,但本發明之銀微粒子之製造方法儘管所得銀微粒子係前述平均粒徑(DSEM)為30~100nm之微粒子,但可獲得具有3.0g/cm3以上之高敲緊密度,故適宜作為低溫燒結性及電極或電路圖型中之填充性優異之銀微粒子之製造方法。 In general, the smaller the size of the silver fine particles, the smaller the knocking degree tends to be. However, the silver fine particles obtained by the method of the present invention have the above-mentioned average particle diameter (D SEM ) of 30 to 100 nm. Since 3.0 g/cm 3 or more has a high degree of tightness, it is suitable as a method for producing silver fine particles excellent in low-temperature sinterability and filling property in an electrode or a circuit pattern.
又,本發明之銀微粒子由於以上述製造方 法,儘管係平均粒徑(DSEM)為30~100nm之微粒子,但具有3.0g/cm3以上之高敲緊密度,故適合作為於基板上形成之電極或電路圖型中之填充性優異之導電性糊料等之原料。 Further, in the above-described production method, the silver fine particles of the present invention are preferably formed on a substrate, although they have fine particles having an average particle diameter (D SEM ) of 30 to 100 nm and have a high knocking degree of 3.0 g/cm 3 or more. A raw material such as a conductive paste excellent in filling property in an electrode or a circuit pattern.
Claims (11)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012021348A JP5924481B2 (en) | 2012-02-02 | 2012-02-02 | Method for producing silver fine particles, silver fine particles obtained by the method for producing silver fine particles, and conductive paste containing the silver fine particles |
| JP2012021335A JP5991459B2 (en) | 2012-02-02 | 2012-02-02 | Silver fine particles, production method thereof, and conductive paste, conductive film and electronic device containing the silver fine particles |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201402252A true TW201402252A (en) | 2014-01-16 |
Family
ID=48905369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102103963A TW201402252A (en) | 2012-02-02 | 2013-02-01 | Silver microparticles, method for producing same, and electronic device, conductive film, and conductive paste containing said silver microparticles |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20140125366A (en) |
| CN (1) | CN104080561A (en) |
| TW (1) | TW201402252A (en) |
| WO (1) | WO2013115339A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI687320B (en) * | 2015-04-06 | 2020-03-11 | 日商則武股份有限公司 | Substrate with conductive film, manufacturing method thereof, and conductive paste for polyimide substrate |
| CN114178523A (en) * | 2017-10-04 | 2022-03-15 | Jx金属株式会社 | Method for producing surface-treated copper fine particles |
| EP3560636B1 (en) * | 2016-12-20 | 2022-03-16 | Toyo Seikan Group Holdings, Ltd. | Metal microparticles, and dispersion liquid containing metal microparticles and method for producing same |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015078671A2 (en) * | 2013-11-29 | 2015-06-04 | Heraeus Precious Metals Gmbh & Co. Kg | Process for forming and composite comprising conducting paths comprising silver |
| EP3156157B1 (en) * | 2014-06-16 | 2019-12-25 | Osaka University | Method for synthesizing silver particles, and method for manufacturing electroconductive paste |
| JP6948764B2 (en) * | 2015-06-05 | 2021-10-13 | Dowaエレクトロニクス株式会社 | Silver fine particle dispersion |
| WO2021125161A1 (en) * | 2019-12-19 | 2021-06-24 | 三菱マテリアル株式会社 | Silver paste, method for producing same, and method for producing jointed article |
| WO2021142748A1 (en) * | 2020-01-17 | 2021-07-22 | 深圳市首骋新材料科技有限公司 | Epoxy-resin-based conductive adhesive and preparation method therefor and application thereof |
| US20220351876A1 (en) * | 2020-01-17 | 2022-11-03 | Soltrium Advanced Materials Technology, Ltd. | Acrylic conductive paste for semiconductor device and methods |
| WO2022138235A1 (en) * | 2020-12-22 | 2022-06-30 | 花王株式会社 | Fine-metal-particle-containing ink |
| CN119489200B (en) * | 2024-11-06 | 2025-12-12 | 宁夏中色新材料有限公司 | Preparation method of silver particles with high specific surface area for low-temperature sintering silver paste |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4976642B2 (en) * | 2004-02-10 | 2012-07-18 | 三井金属鉱業株式会社 | High crystalline silver powder and method for producing the same |
| JP4487143B2 (en) * | 2004-12-27 | 2010-06-23 | ナミックス株式会社 | Silver fine particles and method for producing the same, conductive paste and method for producing the same |
| JP5032005B2 (en) * | 2005-07-05 | 2012-09-26 | 三井金属鉱業株式会社 | High crystal silver powder and method for producing the high crystal silver powder |
| JP5239191B2 (en) * | 2006-10-31 | 2013-07-17 | 戸田工業株式会社 | Silver fine particles and method for producing the same |
| JP2007131950A (en) * | 2006-12-04 | 2007-05-31 | Dowa Holdings Co Ltd | Silver powder |
| JP4470193B2 (en) * | 2008-05-01 | 2010-06-02 | ニホンハンダ株式会社 | Method for producing heat-sinterable silver particles, method for producing solid silver, method for joining metal members, method for producing printed wiring board, and method for producing bumps for electrical circuit connection |
| CN101279370A (en) * | 2008-05-15 | 2008-10-08 | 金川集团有限公司 | Method for obtaining monodispersed superfine silver powder from soft-agglomerated silver powder |
| JP2011080094A (en) * | 2009-10-02 | 2011-04-21 | Toda Kogyo Corp | Fine silver particle, method for producing same, conductive paste containing the fine silver particles, conductive film, and electronic device |
| JP5761483B2 (en) * | 2010-05-07 | 2015-08-12 | 戸田工業株式会社 | Silver fine particles and production method thereof, and conductive paste, conductive film and electronic device containing the silver fine particles |
| CN102218539A (en) * | 2011-05-26 | 2011-10-19 | 江苏科技大学 | Method for preparing ultrafine silver powder |
-
2013
- 2013-01-31 CN CN201380007258.8A patent/CN104080561A/en active Pending
- 2013-01-31 WO PCT/JP2013/052273 patent/WO2013115339A1/en not_active Ceased
- 2013-01-31 KR KR1020147020950A patent/KR20140125366A/en not_active Withdrawn
- 2013-02-01 TW TW102103963A patent/TW201402252A/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI687320B (en) * | 2015-04-06 | 2020-03-11 | 日商則武股份有限公司 | Substrate with conductive film, manufacturing method thereof, and conductive paste for polyimide substrate |
| EP3560636B1 (en) * | 2016-12-20 | 2022-03-16 | Toyo Seikan Group Holdings, Ltd. | Metal microparticles, and dispersion liquid containing metal microparticles and method for producing same |
| CN114178523A (en) * | 2017-10-04 | 2022-03-15 | Jx金属株式会社 | Method for producing surface-treated copper fine particles |
| CN114178523B (en) * | 2017-10-04 | 2024-03-01 | Jx金属株式会社 | Method for producing surface-treated copper microparticles |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140125366A (en) | 2014-10-28 |
| CN104080561A (en) | 2014-10-01 |
| WO2013115339A1 (en) | 2013-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201402252A (en) | Silver microparticles, method for producing same, and electronic device, conductive film, and conductive paste containing said silver microparticles | |
| JP5632852B2 (en) | Low temperature sinterable silver nanoparticle composition and electronic article formed using the composition | |
| Lee et al. | A low-cure-temperature copper nano ink for highly conductive printed electrodes | |
| TWI490063B (en) | Silver fine particles and a method for producing the same, and an electric paste containing the silver fine particles, a conductive film, and an electronic device | |
| Dong et al. | Facile synthesis of high silver content MOD ink by using silver oxalate precursor for inkjet printing applications | |
| JP5924481B2 (en) | Method for producing silver fine particles, silver fine particles obtained by the method for producing silver fine particles, and conductive paste containing the silver fine particles | |
| CN104245192B (en) | A kind of method making conductive metal thin film and thus obtained conductive metal thin film and flexible printed circuit board | |
| JP5761483B2 (en) | Silver fine particles and production method thereof, and conductive paste, conductive film and electronic device containing the silver fine particles | |
| TW201341087A (en) | Silver fine particles, production process therefor, and conductive paste, conductive membrane and electronic device, containing said silver fine particles | |
| TWI702262B (en) | Composition for manufacturing metal nanoparticle | |
| JP5773148B2 (en) | Silver fine particles, and conductive paste, conductive film and electronic device containing the silver fine particles | |
| WO2012053456A1 (en) | Process for manufacturing copper hydride fine particle dispersion, electroconductive ink, and process for manufaturing substrate equipped with conductor | |
| KR102260398B1 (en) | Method for producing metal nanoparticles | |
| CN103702786B (en) | Silver microparticle and the conductive paste containing this silver-colored microparticle, conductive film and electronic device | |
| CN105788756B (en) | A kind of transparent metal conducting film and preparation method thereof | |
| CN103525199B (en) | A method for preparing nanoscale copper ink that can be processed without heating | |
| JP2012031478A (en) | Silver fine particle and method of manufacturing the same, conductive paste containing the silver fine particle, conductive film, and electronic device | |
| JP5991459B2 (en) | Silver fine particles, production method thereof, and conductive paste, conductive film and electronic device containing the silver fine particles | |
| JP5773147B2 (en) | Silver fine particles, and conductive paste, conductive film and electronic device containing the silver fine particles | |
| TWI504693B (en) | Low-temperature sinterable silver nanoparticle composition and electronic article formed using the composition | |
| Sun et al. | A Novel One-step Thermal Decomposition Route for High-Conductivity Mock-strawberry Shaped Copper Nanoparticles | |
| Li et al. | Preparation of stable aqueous based Ag nanoparticle ink with different capping agent for printing on a plastic substrate | |
| HK1169967B (en) | Low-temperature sinterable silver nanoparticle composition and electronic component formed using that composition |