TW201401559A - Light emitting semiconductor structure and fabricating method thereof - Google Patents

Abstract

A light emitting semiconductor structure includes an epitaxial structure, a first insulating structure, a first conductor structure, a second insulating structure, and a second conductor structure. The epitaxial structure includes a first contact and a second contact. The first insulating structure covers a part of the first contact and a part of the second contact. The first conductor structure covers a part of the first insulating structure and electrically couples with the first contact. The second insulating structure covers a part of the first conductor structure and a part of the first insulating structure. The second conductor structure covers a part of the second insulating structure and electrically couples the second contact.

Description

Semiconductor light emitting structure and method of manufacturing same

The present invention is a semiconductor structure and a method of fabricating the same, and is particularly applicable to a flip-chip semiconductor light-emitting structure and a method of fabricating the same.

Light emitting diode (LED) can convert electrical signals into optical signals, and is gradually popularized in display panels, indicator lights, illumination, etc. Compared with traditional light sources, it has energy saving, high efficiency and fast response speed. Long life and less damage.

The principle of light-emitting diode illumination is that the P-type semiconductor is connected to the N-type semiconductor in the epitaxial structure, and then the voltage is applied to the positive and negative ends of the light-emitting diode. When the current passes, the electron holes are combined and the combined energy is combined. It is emitted in the form of light. However, the heat generated during bonding has an adverse effect on the characteristics, life and reliability of the light-emitting diode. Therefore, the conventional technology attempts to solve the heat dissipation problem by flip-chip packaging.

Referring to FIG. 1 , FIG. 1 is a schematic side view of a conventional flip-chip light-emitting diode 10 . The conventional technology utilizes a light-emitting diode when the flip-chip light-emitting diode element is connected to the circuit board 17 . The conductors 16a and 16b of the device are electrically coupled to the electrodes 17a and 17b of the circuit board 17, and one ends of the two conductors 16a and 16b are vertically disposed on different electrically doped layers of the epitaxial structure 12, and the other ends are respectively connected to the electrodes 17a. 17b meets.

Accordingly, after the flip-chip light-emitting diode elements are coupled to the circuit board 17, there are still many gaps between each other. To consolidate the structure, the insulating glue N is underfilled by the capillary action. , capillary action can not be uniform Filling the gap, and the thickness d of the epitaxial structure 12 of the light-emitting diode is small, and the gap between the unfilled circuit board 17 and the circuit board 17 makes the overall structure weaker, and the laser peels off the substrate or has other slight external force. When the impact occurs, the epitaxial structure 12 is easily cracked. Furthermore, the inventors have found that underfill voids with insulating glue N, the heat dissipation efficiency is not good.

In view of this, how to make the epitaxial structure less susceptible to cracking by external force, improve the reliability of the light emitting diode, and enhance the heat dissipation efficiency to improve its efficiency are the main purposes of developing the present invention.

An object of the present invention is to provide a semiconductor light emitting structure for the purpose of protecting an epitaxial structure, improving its reliability, and enhancing heat dissipation efficiency to improve its performance. To achieve the foregoing objective, the semiconductor light emitting structure includes an epitaxial structure, a first insulating structure, a first conductor structure, a second insulating structure, and a second conductor structure. The epitaxial structure has a first contact and a second contact, wherein the first contact and the second contact are located on the same side of the epitaxial structure; the first insulating structure covers a portion of the first contact and a portion of the second contact; and the first conductor structure covers the portion The first insulating structure electrically couples the first contact; the second insulating structure covers a portion of the first conductor structure and a portion of the first insulating layer; and the second conductor structure covers a portion of the second insulating structure and electrically couples the second contact.

In an embodiment of the invention, in the semiconductor light emitting structure, the first conductor structure has a first support portion, the second conductor structure has a second support portion, and the second insulation structure has a second horizontal portion, the first support portion The second support portion and the second horizontal portion are both parallel to the extended surface of the epitaxial structure, and the second horizontal portion is located between the first support portion and the second support portion.

In an embodiment of the invention, the epitaxial junction of the semiconductor light emitting structure The structure includes a first doped layer, a second doped layer, and a light emitting layer. The first doped layer is electrically coupled to the first contact; the second doped layer is electrically coupled to the second contact, wherein the second doped layer is electrically opposite to the first doped layer; the luminescent layer is located at the first Between the doped layer and the second doped layer.

In an embodiment of the invention, in the semiconductor light emitting structure, the first insulating structure has a first horizontal portion, the first horizontal portion is parallel to the extending surfaces of the contacts, and the first horizontal portion is located at the second contact and the first Between the support parts.

In an embodiment of the invention, the epitaxial structure of the semiconductor light emitting structure includes a first doped layer, a second doped layer, and a light emitting layer. The first doped layer is electrically coupled to the second contact; the second doped layer is electrically coupled to the first contact, wherein the second doped layer is electrically opposite to the first doped layer; the luminescent layer is located Between the first doped layer and the second doped layer.

In an embodiment of the invention, the first support portion is located between the first contact and the second horizontal portion.

In an embodiment of the present invention, the epitaxial structure of the semiconductor light emitting structure includes at least two sets of epitaxial cells, the two sets of epitaxial cells have tunneling junctions, and the epitaxial cells include a first doped layer, Two doped layers, luminescent layers. The second doped layer is electrically opposite to the first doped layer; the luminescent layer is located between the first doped layer and the second doped layer, and the luminescent layer comprises at least one quantum well structure.

In an embodiment of the invention, the material of the first insulating structure and the second insulating structure of the semiconductor light emitting structure comprises a transparent oxide; and the material of the first conductive structure and the second conductive structure comprises a metal.

In an embodiment of the invention, the semiconductor light emitting structure further includes a circuit board having a first electrode and a second electrode, the first electrode electrically coupled to the first conductor structure, and the second electrode and the second electrode The conductor structure is electrically coupled.

An object of the present invention is to provide a method for fabricating a semiconductor light emitting structure Protect the epitaxial structure, improve its reliability, and enhance heat dissipation efficiency to improve its performance. To achieve the foregoing objective, the method of fabricating a semiconductor light emitting structure comprises the steps of: providing an epitaxial structure; forming a first contact and a second contact on the epitaxial structure, wherein the first contact and the second contact are located on the same side of the epitaxial structure; An insulating structure for covering a portion of the first contact and a portion of the second contact; forming a first conductor structure on the first insulating structure, wherein the first conductor structure is electrically coupled to the first contact; and forming a portion of the first conductor structure a second insulating structure, and the second insulating structure covers a portion of the first insulating structure; and a second conductive structure is formed on the second insulating structure, wherein the second conductive structure is electrically coupled to the second contact.

In an embodiment of the present invention, the method for fabricating a semiconductor light emitting structure, the method further comprising: providing a circuit board having a first electrode and a second electrode; and electrically coupling the first electrode to the first conductor Structure, and electrically coupling the second electrode to the second conductor structure.

In an embodiment of the present invention, in the method for fabricating a semiconductor light emitting structure, the step of forming an epitaxial structure includes providing a substrate; forming a first doped layer on the substrate; forming a light emitting layer on the first doped layer; Forming a second doped layer electrically opposite to the first doped layer on the light emitting layer; and etching a portion of the second doped layer and the portion of the light emitting layer to expose a portion of the first doped layer.

In an embodiment of the invention, the method for fabricating a semiconductor light emitting structure, wherein a first contact is formed on an exposed portion of the first doped layer, and a second contact is formed on the second doped layer.

In an embodiment of the invention, the method for fabricating a semiconductor light emitting structure, wherein a second contact is formed on an exposed portion of the first doped layer, and a first contact is formed on the second doped layer.

In an embodiment of the invention, the method for fabricating a semiconductor light emitting structure, wherein the method of forming the first conductor structure and the second conductor structure comprises performing electricity Plating process.

In an embodiment of the invention, the semiconductor light emitting structure manufacturing method, wherein the substrate is an opaque substrate, the step further comprises removing the substrate to expose the epitaxial structure.

The above and other objects, features and advantages of the present invention will become more <RTIgt;

The technique of the present invention is suitable for use in semiconductor light emitting structures, particularly flip chip semiconductor light emitting structures. Referring to FIG. 2A, FIG. 2A is a schematic side view of a semiconductor light emitting structure according to an embodiment of the present invention. First, the substrate 21 is provided, and the material thereof may be tantalum, tantalum carbide, aluminum, aluminum oxide, gallium nitride, indium nitride, aluminum nitride, zinc oxide, sapphire, glass, quartz or a combination thereof, but is not limited thereto. Further, the substrate includes a polar substrate, a semi-polar substrate, or a non-polar substrate.

Next, an epitaxial structure 22 is formed on the substrate 21. The first side 22a of the epitaxial structure 22 is opposite to the substrate 21. The first doped layer 221 of the epitaxial structure 22 is on the substrate 21, and the second doped layer 223 is formed. On the first doped layer 221, there is a light-emitting layer 222 between the two doped layers 221, 223, which may be a single-layer quantum well structure or a multiple quantum well structure. In addition, the electrical properties of the two doped layers 221, 223 are opposite. For example, the first doped layer 221 may be an N-type doped layer, and the second doped layer 223 may be a P-type doped layer. The electrical properties of the layers 221, 223 can also be replaced with each other. The material of the epitaxial structure 22 may be a group III nitride such as indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN), indium gallium nitride (InGaN), indium aluminum gallium nitride (InAlGaN). ), etc., but not limited to the above.

Etching on the other side of the epitaxial structure 22 opposite the first side 22a a portion of the second doped layer 223 and the light emitting layer 222 are etched away to expose a portion of the surface 2211 of the first doped layer 221 and expose the second doped layer 223 and the sidewall 2231 of the light emitting layer 222, leaving no The surface 2232 of the second doped layer 223 is etched away. Next, a second contact 24 is formed on the surface 2232 of the second doped layer 223.

In this embodiment, a first insulating structure 25a is formed to cover the sidewalls 2231 of the second doping layer 223 and the light emitting layer 222, and a majority of the second contacts 24, and the sidewalls 2231 are covered in the first insulating structure 25a. A portion of the first doped layer 221 has a surface 2211, and the first insulating structure 25a has a first horizontal portion 251 that covers the second contact 24 parallel to the extended surface of the epitaxial structure 22. Next, a first contact 23 is formed on the surface 2211 of the first doped layer 221, adjacent to the first insulating structure 25a, and insulated from the second doped layer 223 and the light emitting layer 222 by the first insulating structure 25a.

If the first doped layer 221 is an N-type doped layer, the first contact 23 material adjacent thereto may be one of a group consisting of titanium, aluminum, chromium, platinum, gold or a combination thereof, such as chromium/platinum/ Gold (Cr/Pt/Au), titanium/aluminum/platinum/gold (Ti/Al/Pt/Au) or titanium/platinum/gold (Ti/Pt/Au); if the second doped layer 223 is P-type doped The impurity layer, the material of the second contact 24 adjacent thereto may be one of or a combination of nickel, platinum, silver, indium tin oxide, such as nickel/silver (Ni/Ag), nickel/platinum/silver (Ni/Pt/Ag) or indium tin oxide/silver (ITO/Ag). If the electrical properties of the first doped layer 221 and the second doped layer 223 are mutually replaced, the materials of the first contact 23 and the second contact 24 are also replaced with each other.

Next, a first conductor structure 26a is formed on the first contact 23 by an electroplating process, and the first conductor structure 26a is electrically coupled to the first contact 23. The first conductor structure 26a extends along a surface parallel to the surface of the epitaxial structure 22, that is, the surface 2232 of the second doping region 223, to form a first supporting portion 261. The first supporting portion 261 covers most of the first insulating structure. 25a. By the first insulating structure 25a The first conductor structure 26a is insulated from the second contact 24.

Next, a second insulating structure 25b is formed to cover a portion of the first horizontal portion 251, and the second insulating structure 25b has a second horizontal portion 252. The second horizontal portion 252 covers most of the first support portion 261, but exposes a portion 261S of the first support portion 261. Further, a second conductor structure 26b is formed on the second contact 24 by an electroplating process, and the second conductor structure 26b is electrically coupled to the second contact 24. The second conductor structure 26b extends along a surface parallel to the surface of the epitaxial structure, that is, the surface 2232 of the second doped region 223, to form a second support portion 262. The first conductor structure 26a is insulated from the second conductor structure 26b by the second insulating structure 25b.

It should be noted that, in this embodiment, the second horizontal portion 252 is located between the first supporting portion 261 and the second supporting portion 262, and the conductive structures 25a, 26b are alternately stacked with the insulating structures 25a, 25b. The semiconductor light emitting structure 20 having the structurally stable characteristics as shown in FIG. 2A is formed to achieve the purpose of protecting the epitaxial structure 22. Further, the plurality of conductive structures 26a and 26b having a thickness d _m, the total thickness of 2d _m may range from 20 to 50 microns, sufficient to enhance the protection of the epitaxial structure 22. Accordingly, it is no longer necessary to stabilize the epitaxial structure 22 by filling the underfill rubber N, resulting in improvement of the lack of uniform filling of the prior art.

2A and 2B, FIG. 2B is a schematic side view of a flip-chip semiconductor light emitting structure according to an embodiment of the present invention. Next, the semiconductor light emitting structure 20 shown in FIG. 2A is flipped by 180 degrees, and is connected to the circuit board 27, and the first electrode 271 of the circuit board 27 is corresponding to the uncovered surface 261S of the first conductor structure 26a. That is, the two are electrically coupled; and the second electrode 272 of the circuit board 27 is corresponding to any surface of the second support portion 262 of the second conductor structure 26b to electrically couple the two. It should be noted that the structural design of the semiconductor light emitting structure 20 is such that the circuit board 27 is conveniently connected thereto, and the embodiment is completed. The flip-chip semiconductor light-emitting structure 20' is improved in the prior art, such as the absence of misalignment between the two conductors 16a, 16b and the two electrodes 17a, 17b.

The material of the circuit board may be a metal-based printed circuit board, a copper foil printed circuit board, a ceramic substrate or a germanium substrate. Further, the plurality of insulating structure 25a, 25b of material comprises a transparent oxide such as silicon dioxide (SiO _2), silicon nitride (Si ₃ N _4), titanium oxide (TiO _2), tantalum oxide (Tantalum pentoxide, Ta ₂ O ₅ ) and so on. The materials of the conductor structures 26a, 26b may be metal, and the metal material helps the heat dissipation of the flip-chip semiconductor light-emitting structure 20', thereby improving the problem of poor heat dissipation performance of the prior art.

Therefore, a forward voltage is applied to the flip-chip semiconductor light emitting structure 20', and a small number of electron hole carriers are respectively implanted into the P-type doped layer and the N-type doped layer. In the P-type doped layer, most of the holes are A small number of electrons to be injected are recombined; and in the N-type doped layer, most of the electrons are recombined with a small number of holes to be implanted, and light is generated when combined in the light-emitting layer. If the first doped layer 221 is an N-type doped layer and the second doped layer 223 is a P-type doped layer, the first electrode 271 should be a negative electrode and the second electrode 272 be a positive electrode for a PN. The junction is applied with a forward voltage. If the doping layers 221 and 223 are electrically exchanged, the positive and negative electrodes of the electrodes 271 and 272 are also interchanged. In one embodiment, the substrate 21 is a transparent substrate through which light emitted by the luminescent layer is directed toward the first side 22a of the epitaxial structure 22 and exits through the transparent substrate 21. In another embodiment, the substrate 21 is an opaque substrate, and the opaque substrate 21 is removed to expose the epitaxial structure 22.

Referring to FIG. 3, FIG. 3 is a schematic side view of a flip-chip semiconductor light-emitting structure according to a second embodiment of the present invention. The same feature as the previous embodiment is that the conductor structure and the insulating structure are alternately stacked to protect the epitaxial layer. Structure 22 is protected from external forces. In the flip-chip semiconductor light emitting structure 30, the first contact 33 is adjacent to and electrically coupled to the surface 2232 of the second doped layer 223; and the second contact 34 is adjacent to and electrically coupled to the exposed surface 2211 of the first doped layer 221.

In the present embodiment, the first insulating structure 35a covers the surface 2211 of the sidewall 2231, a portion of the first doped layer 221, and a portion of the first contact 33, and is adjacent to the second contact 34. Next, an electroplating process is performed on the first contact 33 to form the first conductor structure 36a and electrically coupled to the first contact 33. The first conductor structure 36a extends along a direction parallel to the surface 2232 of the second doped region 223 to form a first support portion 361 that covers most of the first contact 33.

In addition, in order to insulate the first conductor structure 36a from the subsequently formed second conductor structure 36b, the second insulating structure 35b extends on the first insulating structure 35a along the parallel direction of the surface 2232 of the second doping region 223 to form a second The horizontal portion 352 covers the first support portion 361. However, a small portion of the surface 361S of the first support portion 361 remains, leaving the circuit board electrically coupled. Next, an electroplating process is performed on the second contact 34 to form a second conductor structure 36b electrically coupled to the second contact 34 and having a second support formed in a direction parallel to the sidewall 2231 of the second doped layer 223. Part 362. The second support portion 362 covers a portion of the first insulating structure 35a, and a majority of the second insulating structure 35b.

Finally, the first electrode 371 of the circuit board 37 is corresponding to the uncovered surface 361S of the first conductor structure 36a, so that the two are electrically coupled; and the second electrode 372 of the circuit board 37 is corresponding to the second conductor. Either at the surface of the second support portion 362 of the structure 36b, the two are electrically coupled. Thus, the flip-chip semiconductor light-emitting structure 30 of the present embodiment is formed, and the conductor structures 36a, 36b and the insulating structures 35a, 35b are alternately stacked to achieve a stable overall structure, and the epitaxial structure is protected from external force damage. And the purpose of the case to increase the heat dissipation effect.

In another embodiment, the foregoing process may be slightly modified to connect at least two in series. As shown in FIG. 2B, FIG. 4 is a schematic side view of a series connection of a flip chip type semiconductor light emitting structure according to a third embodiment of the present invention. In the present embodiment, the semiconductor light emitting structures 20(1) and 20(2) having the same structure are formed in the same process, except that the foregoing processes are different in forming the first insulating structures 25a(1), 25a(2). At the same time, a third insulating structure 25c is formed between the two semiconductor light emitting structures 20(1), 20(2) to insulate the first contact 23(1) from the second contact 24(2). Further, when the second conductor structure 26b(2) is formed, it is electrically coupled to the first conductor structure 26a(1).

Next, the two semiconductor light emitting structures 20(1), 20(2) are flipped by 180 degrees (as shown in FIG. 4) to make the first conductor structure 26a(1) of the semiconductor light emitting structure 20(1) and the semiconductor light emitting structure 20 The second conductor structure 26b(2) of (2) is electrically coupled, and then electrically couples the first electrode 471 of the circuit board 47 to the first conductor structure 26a(2) of the semiconductor light emitting structure 20(2), and the circuit The second electrode 472 of the board 47 is electrically coupled to the second conductor structure 26b(1) of the semiconductor light emitting structure 20(1) for electrically coupling with the circuit board 47 to complete the series structure 40 of the flip chip semiconductor light emitting structure. .

Referring to FIG. 5, FIG. 5 is a schematic side view showing a parallel connection of a flip chip type semiconductor light emitting structure according to a fourth embodiment of the present invention. Similarly, the foregoing process is slightly modified to change the mask pattern to form two identical but bilaterally symmetric semiconductor light emitting structures 20(1), 20(2), and to make the two first conductor structures 26a(1) 26a (2) electrically coupled, and electrically coupling the first electrode 571 of the circuit board 57 with the first conductor structure 26a (1) / 26a (2), and the second electrode 572 and the second conductor structure 26b (1), 26b (2) electrically coupled to complete the parallel structure 50 of at least two flip-chip semiconductor light emitting structures.

Please refer to FIG. 6. FIG. 6 is a schematic side view showing the epitaxial structure according to the fifth embodiment of the present invention. As shown in FIG. 6, the epitaxial structure 22 can include a plurality of epitaxial cells. Taking two sets of epitaxial units 22(a), 22(b) as an example: the epitaxial unit 22(a) includes a first doped layer 221(a), a second doped layer 223(a), and two a light-emitting layer (not shown) in the middle of the doped layer, and the two doped layers 221 (a), 223 (a) are electrically opposite; the epitaxial cell 22 (b) comprises a first doped layer 221 (b), The second doped layer 223(b), and a light emitting layer (not shown) located between the two doped layers, and the two doped layers 221(b), 223(b) are electrically opposite. The epitaxial structure 22 is formed by stacking the two epitaxial cells 22(a), 22(b) by a tunnel junction 224. In addition, by changing the material type of the epitaxial structure to change the energy value of the light-emitting layer, the wavelength of the emitted light can be changed to emit light of different colors.

In summary, the insulating structure and the conductor structure are staggered and stacked to achieve enhanced structural stability, protect the epitaxial structure, avoid the lack of filling unevenness caused by the underfill insulating rubber, and improve the heat dissipation effect of the semiconductor light emitting structure. purpose.

While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

10‧‧‧Flip-chip light-emitting diode

12‧‧‧ Epitaxial structure

16a, 16b‧‧‧ conductor

17‧‧‧Circuit board

17a, 17b‧‧‧ electrodes

20, 20 (1), 20 (2) ‧ ‧ semiconductor light-emitting structure

20', 30‧‧‧ flip-chip semiconductor light-emitting structure

21‧‧‧Substrate

22‧‧‧ epitaxial structure

22a‧‧‧ first side

221, 221 (a), 221 (b) ‧ ‧ first doped layer

223, 223 (a), 223 (b) ‧ ‧ second doped layer

2211, 2232, 261S, 361S‧‧‧ surface

222‧‧‧Lighting layer

2231‧‧‧ side wall

22(a), 22(b)‧‧‧ Epitaxial unit

224‧‧‧ Tunneling junction

23, 23 (1), 33‧ ‧ first contact

24, 24 (2), 34‧ ‧ second contact

25a, 35a, 25a (1), 25a (2) ‧ ‧ first insulation structure

25b, 35b‧‧‧second insulation structure

25c‧‧‧third insulation structure

251‧‧‧ first horizontal department

252, 352‧‧‧ second horizontal department

26a, 36a, 26a (1), 26a (2) ‧ ‧ first conductor structure

26b, 36b, 26b (1), 26b (2) ‧ ‧ second conductor structure

261, 361‧‧‧ first support

262, 362‧‧‧second support

271, 272, 371, 372, 471, 472, 571, 572 ‧ ‧ electrodes

27, 37, 47, 57‧‧‧ circuit boards

40‧‧‧ series structure of flip-chip semiconductor light-emitting structures

50‧‧‧Parallel structure of flip-chip semiconductor light-emitting structure

N‧‧‧Insulating adhesive

d, d _m ‧‧‧ thickness

FIG. 1 is a schematic side view of a conventional flip-chip light-emitting diode 10.

2A is a side view showing a semiconductor light emitting structure according to a first embodiment of the present invention.

2B is a side view showing a flip-chip semiconductor light-emitting structure according to a first embodiment of the present invention.

3 is a side view showing a flip-chip semiconductor light emitting structure according to a second embodiment of the present invention.

4 is a schematic side view showing a series connection of a flip chip type semiconductor light emitting structure according to a third embodiment of the present invention.

FIG. 5 is a side view showing a parallel connection of a flip chip type semiconductor light emitting structure according to a fourth embodiment of the present invention.

Figure 6 is a side elevational view showing the epitaxial structure of the fifth embodiment of the present invention.

20‧‧‧Semiconductor light-emitting structure

21‧‧‧Substrate

22‧‧‧ epitaxial structure

22a‧‧‧ first side

221‧‧‧First doped layer

223‧‧‧Second doped layer

2211, 2232, 261S‧‧‧ surface

222‧‧‧Lighting layer

2231‧‧‧ side wall

23‧‧‧First contact

24‧‧‧second contact

25a‧‧‧First insulation structure

25b‧‧‧Second insulation structure

251‧‧‧ first horizontal department

252‧‧‧Second level

26a‧‧‧First conductor structure

26b‧‧‧Second conductor structure

261‧‧‧First support

262‧‧‧Second support

d _m ‧‧‧thickness

Claims (16)

A semiconductor light emitting structure comprising: an epitaxial structure having a first contact and a second contact, wherein the first contact and the second contact are on the same side of the epitaxial structure; a first insulating structure covering the portion The first contact and a portion of the second contact; a first conductor structure covering a portion of the first insulating structure and electrically coupling the first contact; a second insulating structure covering a portion of the first conductor structure and a portion of the a first insulating layer; and a second conductor structure covering a portion of the second insulating structure and electrically coupling the second contact. The semiconductor light emitting structure of claim 1, wherein the first conductor structure has a first support portion, the second conductor structure has a second support portion, and the second insulation structure has a second horizontal portion The first support portion, the second support portion and the second horizontal portion are both parallel to an extended surface of the epitaxial structure, and the second horizontal portion is located between the first support portion and the second support portion. The semiconductor light emitting structure of claim 2, wherein the epitaxial structure comprises: a first doped layer electrically coupled to the first contact; a second doped layer, and the second contact Sexually coupled, wherein the second doped layer is electrically opposite to the first doped layer; and an emissive layer is between the first doped layer and the second doped layer. The semiconductor light emitting structure according to claim 3, wherein the An insulating structure has a first horizontal portion that is parallel to the extended surfaces of the contacts, the first horizontal portion being located between the second contact and the first support portion. The semiconductor light emitting structure of claim 2, wherein the epitaxial structure comprises: a first doped layer electrically coupled to the second contact; a second doped layer coupled to the first contact Sexually coupled, wherein the second doped layer is electrically opposite to the first doped layer; and a light emitting layer is disposed between the first doped layer and the second doped layer. The semiconductor light emitting structure of claim 5, wherein the first support portion is located between the first contact and the second horizontal portion. The semiconductor light emitting structure of claim 1, wherein the epitaxial structure comprises at least two epitaxial cells stacked between each other by a tunnel junction, each of the epitaxial cells comprising a first doped layer; a second doped layer electrically opposite to the first doped layer; and a light emitting layer between the first doped layer and the second doped layer, wherein the The luminescent layer comprises at least one quantum well structure. The semiconductor light emitting structure of claim 1, wherein the material of the first insulating structure and the second insulating structure comprises a transparent oxide, and the material of the first conductive structure and the second conductive structure comprises a metal. The semiconductor light emitting structure according to claim 1, further comprising a a circuit board having a first electrode and a second electrode, the first electrode being electrically coupled to the first conductor structure, and the second electrode being electrically coupled to the second conductor structure. A method of fabricating a semiconductor light emitting structure, the method comprising: providing an epitaxial structure; forming a first contact and a second contact on the epitaxial structure, wherein the first contact and the second contact are located in the epitaxial structure Forming a first insulating structure to cover a portion of the first contact and a portion of the second contact; forming a first conductor structure on the first insulating structure, wherein the first conductor structure is electrically coupled to the first conductor structure a first contact; a second insulating structure is formed on a portion of the first conductor structure, and the second insulating structure covers a portion of the first insulating structure; and a second conductor structure is formed on the second insulating structure, wherein the second contact structure The second conductor structure electrically couples the second contact. The method of manufacturing the semiconductor light emitting structure of claim 10, the method further comprising: providing a circuit board having a first electrode and a second electrode; and electrically charging the first electrode Sexually coupled to the first conductor structure and electrically coupled to the second conductor structure. The method for fabricating a semiconductor light emitting structure according to claim 10, wherein the step of providing the epitaxial structure comprises: providing a substrate; Forming a first doped layer on the substrate; forming a light emitting layer on the first doped layer; forming a second doped layer electrically opposite to the first doped layer on the light emitting layer; The second doped layer and a portion of the luminescent layer are etched to expose a portion of the first doped layer. The method of fabricating a semiconductor light emitting structure according to claim 12, wherein the first contact is formed on an exposed portion of the first doped layer, and the second contact is formed on the second doped layer. The method of fabricating a semiconductor light emitting structure according to claim 12, wherein the second contact is formed on an exposed portion of the first doped layer, and the first contact is formed on the second doped layer. The method for fabricating a semiconductor light emitting structure according to claim 12, wherein the substrate is an opaque substrate, the step further comprising removing the substrate to expose the epitaxial structure. The method of fabricating a semiconductor light emitting structure according to claim 10, wherein the method of forming the first conductor structure and the second conductor structure comprises performing an electroplating process.