TW201408816A - Light-induced nickel plating method for p-type semiconductor silicon and n/p type semiconductor material - Google Patents
Light-induced nickel plating method for p-type semiconductor silicon and n/p type semiconductor material Download PDFInfo
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- TW201408816A TW201408816A TW101130555A TW101130555A TW201408816A TW 201408816 A TW201408816 A TW 201408816A TW 101130555 A TW101130555 A TW 101130555A TW 101130555 A TW101130555 A TW 101130555A TW 201408816 A TW201408816 A TW 201408816A
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 238000007747 plating Methods 0.000 title claims abstract description 80
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 24
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- -1 after cleaning Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 17
- 230000003197 catalytic effect Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005137 deposition process Methods 0.000 abstract 1
- 238000010792 warming Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- NZIHMSYSZRFUQJ-UHFFFAOYSA-N 6-chloro-1h-benzimidazole-2-carboxylic acid Chemical compound C1=C(Cl)C=C2NC(C(=O)O)=NC2=C1 NZIHMSYSZRFUQJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Photovoltaic Devices (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
本發明是有關於一種簡單快速的p型半導體矽與n/p型半導體材料光致鍍鎳方法，尤指一種可達到不需外加電壓、不需經過表面催化處理、析鍍鎳過程不需加溫、能於特定表面進行析鍍鎳、析鍍鎳速率高、製程簡單以及製作成本較低之功效者。
The invention relates to a simple and rapid p-type semiconductor germanium and n/p-type semiconductor material photo-nickel plating method, in particular to a process which can achieve no need of external voltage, no surface catalytic treatment, and nickel plating process. It can be used for nickel plating, high nickel plating rate, simple process and low production cost on a specific surface.
按，太陽電池之電極製程中，基於成本的考量，鎳/銅電極被視為取代網印(screen pringing)銀電極之下一代電極；此技術程序包含首先鍍一層鎳金屬薄膜，經過矽化(silicidation)處理形成鎳矽化物(nickel silicide)後，再利用傳統電鍍方法，進行銅電極製程，該銅電極係作為增厚導電層。電鍍銅已屬於成熟之技術，故此套製程之關鍵技術在於鎳之被覆及形成柵狀局部區域之鎳矽化物薄層。
然，目前已發表的太陽電池鎳/銅電極研究文獻中，使用的鍍鎳方法包括有：無極電鍍及Fraunhofer ISE研發之照光析鍍(light-induced plating)等方法。然而這些方法仍各有其限制與缺點，以致於至今仍難以順利進入量產製程。
(一)無極電鍍鎳法，為發展成熟的技術。但應用在半導體之歐姆接觸上，已不適用活化鈀處理做為催化層之方法。太陽電池無極電鍍鎳製程之表面催化技術，目前為各廠商家掌握之專屬技術。但無極電鍍製程內容主要包括下列缺點：
(1)需經過表面催化步驟
(2)特殊的化學鍍液與高成本。
(3)製程需另外加溫(約80~90℃)。
(4)相較於傳統電鍍，其析鍍速率慢等缺點。
(二) 2009年Fraunhofer ISE提出的照光析鍍技術，被視為最具有潛力的方法，其技術即利用一個形成n/p接面及網印鋁背電極之太陽電池，且於被鍍面被覆一種子層，當光照於被析鍍面，且鋁背電極有外加電壓條件下，於照光面(n-型表面)析鍍出鎳金屬薄膜，然而此技術具有需外加偏壓及需先上種子層等問題。
有鑑於此，本案之發明人特針對前述習用發明問題深入探討，並藉由多年從事相關產業之研發與製造經驗，積極尋求解決之道，經過長期努力之研究與發展，終於成功的開發出本發明「簡單快速的p型半導體矽與n/p型半導體材料光致鍍鎳方法」，藉以改善習用之種種問題。
According to the solar cell electrode process, based on cost considerations, the nickel/copper electrode is considered to replace the next-generation electrode of the screen pringing silver electrode; this technical procedure involves first plating a layer of nickel metal film and undergoing silicidation. After the nickel silicide is formed, the copper electrode process is performed by a conventional plating method, and the copper electrode is used as a thickened conductive layer. Electroplated copper is a mature technology, so the key technology of this process is the coating of nickel and the formation of a thin layer of nickel telluride in the local region of the grid.
However, the currently published nickel/copper electrode research literature for solar cells includes nickel plating methods such as electrodeless plating and light-induced plating developed by Fraunhofer ISE. However, these methods still have their limitations and shortcomings, so that it is still difficult to smoothly enter the mass production process.
(1) Promise electroplating nickel method for the development of mature technology. However, the application of activated palladium treatment as a catalytic layer is not applicable to ohmic contacts of semiconductors. The surface catalytic technology of the solar cell electroless nickel plating process is currently the exclusive technology mastered by various manufacturers. However, the content of the electrodeless plating process mainly includes the following shortcomings:
(1) Surface catalysis step is required (2) Special electroless plating solution and high cost.
(3) The process needs to be heated separately (about 80~90 °C).
(4) Compared with the conventional electroplating, the plating rate is slow and the like.
(b) The photo-plating technology proposed by Fraunhofer ISE in 2009 is regarded as the most promising method. The technology uses a solar cell that forms an n/p junction and a screen printed aluminum back electrode, and is coated on the plated surface. a sub-layer, when the light is applied to the plated surface, and the aluminum back electrode has an applied voltage, a nickel metal film is deposited on the illuminating surface (n-type surface), however, the technology requires an external bias and needs to be applied first. Seed layer and other issues.
In view of this, the inventors of this case have intensively discussed the above-mentioned problems of conventional inventions, and actively pursued solutions through years of experience in R&D and manufacturing of related industries. After long-term efforts in research and development, they finally succeeded in developing this book. Invented "simple and fast p-type semiconductor germanium and n/p-type semiconductor material photo-nickel plating method" to improve various problems.
本發明之主要目的係在於，可達到不需外加電壓、不需經過表面催化處理、析鍍鎳過程不需加溫、能於特定表面進行析鍍鎳、析鍍鎳速率高、製程簡單以及製作成本較低之功效。
為達上述之目的，本發明係一種簡單快速的p型半導體矽與n/p型半導體材料光致鍍鎳方法，其包含下列步驟：
步驟一：取一矽基板，經清潔後於其p型表面上被覆一層鋁金屬薄膜，並於燒結後獲得一被鍍樣品。
步驟二：於容器中調製一鍍鎳溶液。
步驟三：將被鍍樣品再次進行清潔表面，並去除原生氧化層(native oxide)。
步驟四：將被鍍樣品浸入鍍鎳溶液中。
步驟五：取一光源直接照射於被鍍樣品之欲鍍表面上，而進行析鍍鎳反應。
步驟六：待析鍍鎳預定時間後，將光源移除，並取出被鍍樣品加以沖洗，再進行吹乾之動作，如此，即於被鍍樣品上完成光致鍍鎳之動作，進而獲得一太陽電池金屬歐姆接觸電極。
於本發明上述實施例中，該步驟一中之矽基板係為p型半導體或n/p型半導體材料。
於本發明上述實施例中，該步驟二中所提之容器係為可透光容器。
於本發明上述實施例中，該步驟二中係以氯化鎳與硼酸之混合水溶液調製成鍍鎳溶液，且將該鍍鎳溶液置於室溫環境下，同時進行循環攪拌。
於本發明上述實施例中，該步驟五之光源係可為燈光或太陽光。
於本發明上述實施例中，該步驟六中之析鍍鎳時間約為1分鐘～2分鐘之間。
The main object of the present invention is to achieve no need for external voltage, no surface catalytic treatment, no nickel plating process, no nickel plating on a specific surface, high nickel plating rate, simple process and fabrication. Lower cost.
To achieve the above object, the present invention is a simple and fast method for photolithographic nickel plating of p-type semiconductor germanium and n/p type semiconductor materials, which comprises the following steps:
Step 1: Take a substrate and clean it, then coat a p-type surface with a thin film of aluminum metal, and obtain a sample after sintering.
Step 2: Prepare a nickel plating solution in the container.
Step 3: The plated sample is again cleaned and the native oxide is removed.
Step 4: Immerse the sample to be plated in the nickel plating solution.
Step 5: taking a light source directly on the surface to be plated of the sample to be plated, and performing a nickel plating reaction.
Step 6: After the nickel plating is to be deposited for a predetermined time, the light source is removed, and the sample to be plated is taken out for rinsing, and then blown and dried, so that the photo-nickel plating action is performed on the sample to be plated, thereby obtaining a Solar cell metal ohmic contact electrode.
In the above embodiment of the present invention, the substrate in the first step is a p-type semiconductor or an n/p type semiconductor material.
In the above embodiment of the present invention, the container mentioned in the second step is a light-permeable container.
In the above embodiment of the present invention, in the second step, a nickel plating solution is prepared by using a mixed aqueous solution of nickel chloride and boric acid, and the nickel plating solution is placed in a room temperature environment while circulating stirring.
In the above embodiment of the present invention, the light source of the step 5 may be light or sunlight.
In the above embodiment of the present invention, the nickel plating time in the step 6 is between about 1 minute and 2 minutes.
請參閱『第１圖～第７圖』所示，係分別為本發明步驟一之示意圖、本發明步驟二之示意圖、本發明步驟三之示意圖、本發明步驟四之示意圖、本發明步驟五之示意圖及本發明步驟六之示意圖。如圖所示：本發明係一種簡單快速的p型半導體矽與n/p型半導體材料光致鍍鎳方法，其至少包含有下列步驟：
步驟一：取一可為p型半導體或n/p型半導體材料之矽基板１１，將該矽基板１１經清潔後於其p型表面上被覆一層鋁金屬薄膜１２，並於燒結後獲得一被鍍樣品１（如：第１及第２圖所示）。
步驟二：於一可透光容器２中調製鍍鎳溶液２１（如：第３圖所示），而該鍍鎳溶液２１主要係以氯化鎳與硼酸之混合水溶液調製成，且將該鍍鎳溶液２１置於室溫環境下，同時進行循環攪拌。
步驟三：將被鍍樣品１再次進行清潔表面（如：第４圖所示），並去除原生氧化層(native oxide)。
步驟四：將被鍍樣品１浸入容器２內之鍍鎳溶液２１中（如：第５圖所示）。
步驟五：取一光源３直接照射於被鍍樣品１之欲鍍表面１３上（如：第６圖所示），而進行析鍍鎳反應，而該光源３係可為燈光或太陽光。
步驟六：待析鍍鎳1分鐘～2分鐘之預定時間後，將光源３移除，並取出被鍍樣品１加以沖洗，再進行吹乾之動作，如此，即於被鍍樣品上完成光致鍍鎳之動作，進而獲得一太陽電池金屬歐姆接觸電極４（如：第７圖所示）。
如此，可使本發明傳統電鍍(electroplating)及無極電鍍(electroless plating)等兩種方法之優點，並應用於太陽電池及其他光電元件，以作為金屬歐姆接觸電極或與半導體緩衝層之使用，而具有降低接觸電阻、及避免後續堆疊電鍍金屬電極中所含有害金屬雜質元素的擴散等功能，能進一步提升太陽電池的光電轉換效率；且使本發明至少達到下列之優點：
1.光致鍍鎳(Light-Induced Nickel-Plating, LINP)技術為一於矽基板１１(p-型或n/p接面矽基板)之p型表面，預先形成鋁金屬薄膜１２後，浸沒於鍍鎳溶液２１中，當光源直接照射於欲析鍍鎳面時，鍍鎳反應立即開始反應；而此鋁背電極之材料費米能階（fermi level, EF）需高於一定值方可致使反應進行，包含利用電子槍鍍鋁或者改良之網版印刷鋁漿電極。而於製程中具有簡單快速之功效，且無需另外增加電壓。
2.當鋁金屬薄膜１２與鍍鎳溶液２１在平衡狀態下，鋁金屬薄膜１２表面與鍍鎳溶液２１間會形成一介面電位差，同時矽基板１１表面與鍍鎳溶液２１同樣也會有電位差產生，二者之電位差值相加總和，能達到析鍍鎳條件所需之電位值時即可析鍍鎳。因此，本發明之析鍍鎳原理為電鍍，而非化學溶液自身之還原析鍍鎳，故析鍍鎳之速率快（時間約1分鐘～2分鐘），可獲得約1μm厚度之鎳金屬薄膜。
3.本發明之欲鍍表面無需經過任何之催化處理，能簡化鍍鎳技術與製程。
4.本發明只在半導體表面產生析鍍鎳反應，不會在鋁金屬薄膜１２上產生析鍍鎳反應，故不需多一道程序來保護背表面，能更進一步簡化鍍鎳技術與製程。
5.本發明之鍍鎳溶液２１使用氯化鎳與硼酸混合鍍液，鍍液成分內容簡單。
6.本發明方法可獲得一高品質之鎳金屬薄膜。
綜上所述，本發明簡單快速的p型半導體矽與n/p型半導體材料光致鍍鎳方法可有效改善習用之種種缺點，可達到不需經過表面催化處理、析鍍鎳過程不需加溫、能於特定表面進行析鍍鎳、析鍍鎳速率高、製程簡單以及製作成本較低之功效；進而使本發明之産生能更進步、更實用、更符合消費者使用之所須，確已符合發明專利申請之要件，爰依法提出專利申請。
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍；故，凡依本發明申請專利範圍及發明說明書內容所作之簡單的等效變化與修飾，皆應仍屬本發明專利涵蓋之範圍內。
Please refer to FIG. 1 to FIG. 7 , which are respectively a schematic diagram of the first step of the present invention, a schematic diagram of the second step of the present invention, a schematic diagram of the third step of the present invention, a schematic diagram of the fourth step of the present invention, and a fifth step of the present invention. A schematic diagram and a schematic diagram of step six of the present invention. As shown in the figure: The present invention is a simple and fast method for photolithographic nickel plating of p-type semiconductor germanium and n/p type semiconductor material, which comprises at least the following steps:
Step 1: taking a germanium substrate 11 which may be a p-type semiconductor or an n/p-type semiconductor material, and after cleaning the germanium substrate 11, a layer of aluminum metal film 12 is coated on the p-type surface thereof, and after sintering, a film is obtained. Plating sample 1 (as shown in Figures 1 and 2).
Step 2: preparing a nickel plating solution 21 (as shown in FIG. 3) in a light transmissive container 2, and the nickel plating solution 21 is mainly prepared by mixing a mixed aqueous solution of nickel chloride and boric acid, and the plating is performed. The nickel solution 21 was placed at room temperature while circulating stirring.
Step 3: The sample 1 to be plated is again cleaned (as shown in Fig. 4), and the native oxide is removed.
Step 4: The sample 1 to be plated is immersed in the nickel plating solution 21 in the container 2 (as shown in Fig. 5).
Step 5: taking a light source 3 directly on the surface 13 to be plated of the sample 1 to be plated (as shown in FIG. 6), and performing a nickel plating reaction, and the light source 3 may be light or sunlight.
Step 6: After the nickel plating is to be electroplated for a predetermined time of 1 minute to 2 minutes, the light source 3 is removed, and the sample 1 to be plated is taken out and rinsed, and then dried, so that the light is formed on the sample to be plated. A nickel plating action is performed to obtain a solar cell metal ohmic contact electrode 4 (as shown in Fig. 7).
Thus, the advantages of the two methods of the present invention, such as electroplating and electroless plating, can be applied to solar cells and other photovoltaic elements for use as metal ohmic contact electrodes or with semiconductor buffer layers. The utility model has the functions of reducing contact resistance, avoiding diffusion of harmful metal impurity elements contained in the subsequent stacked plating metal electrodes, and further improving the photoelectric conversion efficiency of the solar cell; and at least the following advantages are achieved by the present invention:
1. Light-Induced Nickel-Plating (LINP) technology is a p-type surface of a substrate 11 (p-type or n/p junction germanium substrate), and an aluminum metal film 12 is formed in advance, and then immersed. In the nickel plating solution 21, when the light source is directly irradiated on the nickel plating surface, the nickel plating reaction starts to react immediately; and the material fermi level (E F ) of the aluminum back electrode needs to be higher than a certain value. The reaction can be carried out, including electroplating with an electron gun or a modified screen printing aluminum paste electrode. It has a simple and fast function in the process and does not require additional voltage.
2. When the aluminum metal film 12 and the nickel plating solution 21 are in an equilibrium state, an interface potential difference is formed between the surface of the aluminum metal film 12 and the nickel plating solution 21, and the surface of the substrate 11 and the nickel plating solution 21 also have a potential difference. The sum of the potential differences of the two can sum up the nickel when the potential value required for the nickel plating condition can be reached. Therefore, the nickel plating principle of the present invention is electroplating, rather than the reductive nickel plating of the chemical solution itself, so that the rate of nickel plating is fast (about 1 minute to 2 minutes), and a nickel metal film having a thickness of about 1 μm can be obtained.
3. The surface to be plated of the present invention can be simplified without any catalytic treatment, which simplifies the nickel plating technology and process.
4. The present invention only produces a nickel-plating reaction on the surface of the semiconductor, and does not cause a nickel-plating reaction on the aluminum metal film 12, so that no more procedures are needed to protect the back surface, which further simplifies the nickel plating technique and process.
5. The nickel plating solution 21 of the present invention uses a mixed plating solution of nickel chloride and boric acid, and the composition of the plating solution is simple.
6. The method of the present invention provides a high quality nickel metal film.
In summary, the simple and rapid p-type semiconductor germanium and n/p-type semiconductor material photo-nickel plating method can effectively improve various disadvantages of the conventional use, and can be achieved without surface catalytic treatment or nickel plating process. Warm, capable of nickel plating on a specific surface, high nickel plating rate, simple process and low production cost; thus, the invention can be more advanced, more practical, and more suitable for consumer use. Has met the requirements of the invention patent application, and filed a patent application according to law.
However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto; therefore, the simple equivalent changes and modifications made in accordance with the scope of the present invention and the contents of the invention are modified. All should remain within the scope of the invention patent.
1．．．被鍍樣品1. . . Plated sample
11．．．矽基板11. . .矽 substrate
12．．．鋁金屬薄膜12. . . Aluminum metal film
13．．．欲鍍表面13. . . Surface to be plated
2．．．透光容器2. . . Light transmissive container
21．．．鍍鎳溶液twenty one. . . Nickel plating solution
3．．．光源3. . . light source
4．．．太陽電池金屬歐姆接觸電極4. . . Solar cell metal ohmic contact electrode
第１及第２圖，係本發明步驟一之示意圖。
第３圖，係本發明步驟二之示意圖。
第４圖，係本發明步驟三之示意圖。
第５圖，係本發明步驟四之示意圖。
第６圖，係本發明步驟五之示意圖。
第７圖，係本發明步驟六之示意圖。
Figures 1 and 2 are schematic views of the first step of the present invention.
Figure 3 is a schematic diagram of the second step of the present invention.
Figure 4 is a schematic view of the third step of the present invention.
Figure 5 is a schematic view of the fourth step of the present invention.
Figure 6 is a schematic diagram of the fifth step of the present invention.
Figure 7 is a schematic diagram of the sixth step of the present invention.
1．．．被鍍樣品1. . . Plated sample
11．．．矽基板11. . .矽 substrate
12．．．鋁金屬薄膜12. . . Aluminum metal film
13．．．欲鍍表面13. . . Surface to be plated
2．．．透光容器2. . . Light transmissive container
21．．．鍍鎳溶液twenty one. . . Nickel plating solution
3．．．光源3. . . light source
Claims (6)
步驟一：取一矽基板，經清潔後於其p型表面上被覆一層鋁金屬薄膜，並於燒結後獲得一被鍍樣品；
步驟二：於容器中調製一鍍鎳溶液；
步驟三：將被鍍樣品再次進行清潔表面，並去除原生氧化層(native oxide)；
步驟四：將被鍍樣品浸入鍍鎳溶液中；
步驟五：取一光源直接照射於被鍍樣品之欲鍍表面上，而進行析鍍鎳反應；以及
步驟六：待析鍍鎳預定時間後，將光源移除，並取出被鍍樣品加以沖洗，再進行吹乾之動作，如此，即於被鍍樣品上完成光致鍍鎳之動作，進而獲得一太陽電池金屬歐姆接觸電極。A simple and fast method for photolithographic nickel plating of p-type semiconductor germanium and n/p type semiconductor material, comprising the following steps:
Step 1: taking a substrate, after cleaning, coating a p-type surface with an aluminum metal film, and obtaining a sample after sintering;
Step 2: preparing a nickel plating solution in the container;
Step 3: the plated sample is again cleaned and the native oxide is removed;
Step 4: immersing the sample to be plated in a nickel plating solution;
Step 5: taking a light source directly on the surface to be plated of the sample to be plated, and performing a nickel plating reaction; and step 6: after the nickel plating is to be deposited for a predetermined time, removing the light source, and taking out the plated sample for rinsing, Then, the operation of drying is performed, so that the photo-nickel plating operation is performed on the sample to be plated, thereby obtaining a metal ohmic contact electrode of the solar cell.
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| Application Number | Priority Date | Filing Date | Title |
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| TW101130555A TW201408816A (en) | 2012-08-22 | 2012-08-22 | Light-induced nickel plating method for p-type semiconductor silicon and n/p type semiconductor material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101130555A TW201408816A (en) | 2012-08-22 | 2012-08-22 | Light-induced nickel plating method for p-type semiconductor silicon and n/p type semiconductor material |
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| TW201408816A true TW201408816A (en) | 2014-03-01 |
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| TW101130555A TW201408816A (en) | 2012-08-22 | 2012-08-22 | Light-induced nickel plating method for p-type semiconductor silicon and n/p type semiconductor material |
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2012
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