TW201349432A - Single metal damascene structure and method of forming the same - Google Patents
Single metal damascene structure and method of forming the same Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 109
- 239000002184 metal Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims description 32
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 43
- 239000000956 alloy Substances 0.000 claims abstract description 43
- 230000004888 barrier function Effects 0.000 claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 31
- 229910052712 strontium Inorganic materials 0.000 claims description 35
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 35
- 239000010955 niobium Substances 0.000 claims description 26
- 229910052758 niobium Inorganic materials 0.000 claims description 20
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 20
- 229910052788 barium Inorganic materials 0.000 claims description 19
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000945 filler Substances 0.000 claims description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 239000010937 tungsten Substances 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 12
- 239000011572 manganese Substances 0.000 claims description 12
- 229910052715 tantalum Inorganic materials 0.000 claims description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 12
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 239000011575 calcium Substances 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052689 Holmium Inorganic materials 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 229910052775 Thulium Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 238000005496 tempering Methods 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910000914 Mn alloy Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- NZIHMSYSZRFUQJ-UHFFFAOYSA-N 6-chloro-1h-benzimidazole-2-carboxylic acid Chemical compound C1=C(Cl)C=C2NC(C(=O)O)=NC2=C1 NZIHMSYSZRFUQJ-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- HPQRSQFZILKRDH-UHFFFAOYSA-M chloro(trimethyl)plumbane Chemical compound C[Pb](C)(C)Cl HPQRSQFZILKRDH-UHFFFAOYSA-M 0.000 description 1
- -1 copper manganese aluminum Chemical compound 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- IAOQICOCWPKKMH-UHFFFAOYSA-N dithieno[3,2-a:3',2'-d]thiophene Chemical compound C1=CSC2=C1C(C=CS1)=C1S2 IAOQICOCWPKKMH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- CXXKWLMXEDWEJW-UHFFFAOYSA-N tellanylidenecobalt Chemical compound [Te]=[Co] CXXKWLMXEDWEJW-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
本發明是有關於一種單金屬鑲嵌結構及其製造方法。 The present invention relates to a single damascene structure and a method of fabricating the same.
在半導體元件的製程中，前段(front end of line)與後段(back end of line)製程階段之間會包含接觸窗製程，以透過接觸窗來電性連接基底上的元件以及金屬線。 In the fabrication of semiconductor components, a contact window process is included between the front end of line and the back end of the process stages to electrically connect the components on the substrate and the metal lines through the contact windows.
接觸窗製程係在基底上形成元件之後，在基底上先形成內層介電層，再透過微影與蝕刻製程在介電層中形成接觸窗開口，之後，再於接觸窗開口中形成鎢插塞。 After the contact window process is formed on the substrate, an inner dielectric layer is formed on the substrate, and a contact opening is formed in the dielectric layer through a lithography and etching process, and then a tungsten plug is formed in the contact window opening. Plug.
隨著元件微縮，鎢插塞的阻值因尺寸縮小而增加，且前段效能劣化(front-end performance degradation)。若改以銅插塞取代鎢插塞，雖可降低接觸阻值，卻會衍生銅金屬擴散的問題。 As the components shrink, the resistance of the tungsten plug increases due to size reduction, and front-end performance degradation. If the copper plug is replaced by a copper plug, although the contact resistance can be lowered, the problem of copper metal diffusion is derived.
本發明提供一種單金屬鑲嵌結構，其可以降低接觸阻值，且可以避免金屬擴散的問題，提升元件的可靠度。 The invention provides a single damascene structure, which can reduce the contact resistance, can avoid the problem of metal diffusion, and improve the reliability of the component.
本發明提供一種單金屬鑲嵌結構之製造方法，其可以利用簡單的製程形成阻障層，避免金屬擴散的問題，提升元件的可靠度。 The invention provides a manufacturing method of a single damascene structure, which can form a barrier layer by a simple process, avoids the problem of metal diffusion, and improves the reliability of the component.
本發明提出一種單金屬鑲嵌結構，包括絕緣層、填充金屬層以及阻障層。絕緣層中具有開口。填充金屬層位於 上述開口中。阻障層位於上述填充金屬層與上述絕緣層之間，上述阻障層之材料包括銅元素與至少另一金屬之合金。 The invention provides a single damascene structure comprising an insulating layer, a filling metal layer and a barrier layer. There is an opening in the insulating layer. Filled metal layer is located In the above opening. The barrier layer is located between the filler metal layer and the insulating layer, and the material of the barrier layer comprises an alloy of a copper element and at least another metal.
依照本發明一實施例所述，上述至少另一金屬包括錳元素、鋁元素或其合金。 According to an embodiment of the invention, the at least another metal comprises a manganese element, an aluminum element or an alloy thereof.
依照本發明一實施例所述，上述開口包括接觸窗開口或介層窗開口。 According to an embodiment of the invention, the opening comprises a contact window opening or a via opening.
依照本發明一實施例所述，上述填充金屬層包括鎢元素、銅元素或其合金。 According to an embodiment of the invention, the filler metal layer comprises a tungsten element, a copper element or an alloy thereof.
依照本發明一實施例所述，上述單金屬鑲嵌結構，更包括一導電區位於一基底上，與上述阻障層電性接觸。 According to an embodiment of the invention, the single damascene structure further includes a conductive region on a substrate for electrically contacting the barrier layer.
依照本發明一實施例所述，上述單金屬鑲嵌結構，其中上述導電區包括矽化金屬層或摻雜區。 According to an embodiment of the invention, the single damascene structure, wherein the conductive region comprises a deuterated metal layer or a doped region.
依照本發明一實施例所述，上述單金屬鑲嵌結構更包括晶種層，位於上述阻障層與上述填充金屬層之間。 According to an embodiment of the invention, the single damascene structure further includes a seed layer between the barrier layer and the filler metal layer.
依照本發明一實施例所述，上述晶種層的材料是銅以及鋁、鎂、鈹、鈣、鍶、鋇、鈧、釔、鑭、鈰、鐠(Pr)、釹(Nd)、釤(Sm)、銪(Eu)、釓(Gd)、鋱(Tb)、鏑(Dy)、鈥(Ho)、鉺(Er)、銩(Tm)、鐿(Yb)、鎦(Lu)、鉿(Hf)、釩(V)、鈮(Nb)、鉭(Ta)、鉻(Cr)、鉬(Mo)、鎢(W)、錳(Mn)、錸(Re)、矽及鍺至少其中之一所組成的合金。 According to an embodiment of the invention, the material of the seed layer is copper and aluminum, magnesium, barium, calcium, strontium, barium, strontium, strontium, barium, strontium, strontium (Pr), strontium (Nd), strontium ( Sm), 铕 (Eu), 釓 (Gd), 鋱 (Tb), 镝 (Dy), 鈥 (Ho), 铒 (Er), 銩 (Tm), 镱 (Yb), 镏 (Lu), 铪 ( At least one of Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), niobium (Re), niobium and tantalum The alloy of the composition.
本發明提出一種單金屬鑲嵌結構的製造方法，包括在基底上形成絕緣層，接著，於絕緣層中形成開口。之後，於上述開口的側壁與底部形成合金層。此合金層包括第一金屬與第二金屬。其後，於開口中形成填充金屬層，之後， 於含氮氣體中進行回火，使合金層之第二金屬氮化形成金屬氮化物層，做為阻障層。 The present invention provides a method of fabricating a single damascene structure comprising forming an insulating layer on a substrate and then forming an opening in the insulating layer. Thereafter, an alloy layer is formed on the sidewall and the bottom of the opening. The alloy layer includes a first metal and a second metal. Thereafter, a filling metal layer is formed in the opening, after which The tempering is performed in a nitrogen-containing gas, and the second metal of the alloy layer is nitrided to form a metal nitride layer as a barrier layer.
依照本發明一實施例所述，上述第一金屬與上述第二金屬之材料不同。 According to an embodiment of the invention, the first metal is different from the material of the second metal.
依照本發明一實施例所述，上述第一金屬之材料與上述填充金屬層之材料相同。 According to an embodiment of the invention, the material of the first metal is the same as the material of the filler metal layer.
依照本發明一實施例所述，上述第一金屬包括銅元素或其合金。 According to an embodiment of the invention, the first metal comprises a copper element or an alloy thereof.
依照本發明一實施例所述，上述第二金屬包括鈦元素或其合金。 According to an embodiment of the invention, the second metal comprises a titanium element or an alloy thereof.
依照本發明一實施例所述，上述含氮氣體包括氮氣、氨氣或其組合。 According to an embodiment of the invention, the nitrogen-containing gas comprises nitrogen, ammonia or a combination thereof.
依照本發明一實施例所述，上述填充金屬層包括銅元素或其合金。 According to an embodiment of the invention, the filler metal layer comprises a copper element or an alloy thereof.
依照本發明一實施例所述，上述開口包括接觸窗開口或介層窗開口。 According to an embodiment of the invention, the opening comprises a contact window opening or a via opening.
依照本發明一實施例所述，上述單金屬鑲嵌結構的製造方法，更包括在上述基底與上述絕緣層之間形成犧牲層，且上述開口延伸至上述犧牲層中。 According to an embodiment of the invention, the method for fabricating a single damascene structure further includes forming a sacrificial layer between the substrate and the insulating layer, and the opening extends into the sacrificial layer.
依照本發明一實施例所述，上述單金屬鑲嵌結構的製造方法，更包括晶種層，位於上述阻障層與上述填充金屬層之間。 According to an embodiment of the invention, the method for fabricating the single damascene structure further includes a seed layer between the barrier layer and the filler metal layer.
依照本發明一實施例所述，上述晶種層的材料是銅以及鋁、鎂、鈹、鈣、鍶、鋇、鈧、釔、鑭、鈰、鐠(Pr)、 釹(Nd)、釤(Sm)、銪(Eu)、釓(Gd)、鋱(Tb)、鏑(Dy)、鈥(Ho)、鉺(Er)、銩(Tm)、鐿(Yb)、鎦(Lu)、鉿(Hf)、釩(V)、鈮(Nb)、鉭(Ta)、鉻(Cr)、鉬(Mo)、鎢(W)、錳(Mn)、錸(Re)、矽及鍺至少其中之一所組成的合金。 According to an embodiment of the invention, the material of the seed layer is copper and aluminum, magnesium, barium, calcium, strontium, barium, strontium, barium, strontium, strontium, strontium (Pr), Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu (Lu), niobium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), niobium (Re), An alloy of at least one of niobium and tantalum.
本發明上述之單金屬鑲嵌結構可以降低接觸阻值，且可避免金屬擴散的問題，提升元件的可靠度。 The single damascene structure of the present invention can reduce the contact resistance and avoid the problem of metal diffusion and improve the reliability of the component.
本發明上述之單金屬鑲嵌結構之製造方法可以利用簡單的製程形成阻障層，避免金屬擴散的問題，提升元件的可靠度。 The manufacturing method of the single damascene structure of the present invention can form a barrier layer by a simple process, avoid the problem of metal diffusion, and improve the reliability of the component.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.
圖1是依據本發明實施例繪示一種單金屬鑲嵌結構的剖面示意圖。 1 is a cross-sectional view showing a single damascene structure according to an embodiment of the invention.
本發明之單金屬鑲嵌結構30包括介電層16、阻障層20晶種層(seed layer)21以及填充金屬層22。介電層16中具有開口18，裸露出導電區12。介電層16包括介電材料，介電材料可以是氧化矽或是低介電常數材料(介電常數低於4)。開口18可以是單方向延伸的孔洞。此處所述的單方向延伸可以是實質上垂直基底10的表面10a的方向。單方向延伸的孔洞例如是接觸窗開口或介層窗開口。在一實施例中，開口18為接觸窗開口，裸露出的導電區12是位於基底10上的摻雜區、矽化金屬層或閘極導體層。基底10例如是 半導體基底或是絕緣體覆矽基底(SOI)。摻雜區可以是源極區、汲極區或其他與接觸窗連接的區域。矽化金屬層可以是位於源極區或汲極區上者，也可以是位於多晶矽閘極上者。矽化金屬層的材料例如是矽化鎢(WSiX)、矽化鈦(TiSi2)、矽化鈷(CoSi2)或矽化鎳(NiSi2)。閘極導體層可以是摻雜多晶矽層、矽化金屬層或金屬閘極層。介電層16與基底10之間還可以再包括犧牲層14。犧牲層14之材料例如是氮化矽，形成的方法例如是化學氣相沉積法。在另一實施例中，開口18為介層窗開口，裸露出的導電區12可以是金屬線、導線或金屬層。 The single damascene structure 30 of the present invention includes a dielectric layer 16, a barrier layer 20, a seed layer 21, and a fill metal layer 22. The dielectric layer 16 has openings 18 therein that expose the conductive regions 12. Dielectric layer 16 comprises a dielectric material, which may be tantalum oxide or a low dielectric constant material (dielectric constant less than 4). The opening 18 can be a hole that extends in one direction. The unidirectional extension described herein may be a direction that is substantially perpendicular to the surface 10a of the substrate 10. The holes extending in one direction are, for example, contact window openings or via openings. In one embodiment, the opening 18 is a contact opening, and the exposed conductive region 12 is a doped region, a deuterated metal layer, or a gate conductor layer on the substrate 10. The substrate 10 is, for example, a semiconductor substrate or an insulator-covered substrate (SOI). The doped region can be a source region, a drain region, or other region that is connected to the contact window. The deuterated metal layer may be located on the source region or the drain region, or may be on the polysilicon gate. The material of the deuterated metal layer is, for example, tungsten telluride (WSi X ), titanium telluride (TiSi 2 ), cobalt telluride (CoSi 2 ) or nickel telluride (NiSi 2 ). The gate conductor layer may be a doped polysilicon layer, a deuterated metal layer or a metal gate layer. A sacrificial layer 14 may be further included between the dielectric layer 16 and the substrate 10. The material of the sacrificial layer 14 is, for example, tantalum nitride, and the formation method is, for example, chemical vapor deposition. In another embodiment, the opening 18 is a via opening and the exposed conductive region 12 can be a metal line, a wire or a metal layer.
阻障層20位於開口18的側壁18a與底部18b，介於填充金屬層22與介電層16之間，以及填充金屬層22與導電區12之間。在一實施例中，阻障層20之材料包括銅元素與至少另一金屬之合金。前述至少另一金屬包括錳元素、鋁元素或其合金。阻障層20的形成方法可以是化學氣相沉積法或是物理氣相沉積法。 The barrier layer 20 is located between the sidewall 18a and the bottom 18b of the opening 18, between the fill metal layer 22 and the dielectric layer 16, and between the fill metal layer 22 and the conductive region 12. In an embodiment, the material of the barrier layer 20 comprises an alloy of a copper element and at least another metal. The aforementioned at least another metal includes a manganese element, an aluminum element or an alloy thereof. The barrier layer 20 can be formed by a chemical vapor deposition method or a physical vapor deposition method.
晶種層(seed layer)21位於阻障層20以及填充金屬層22之間。晶種層21的材料可以是和填充金屬層22相同的材料，但也可以是與另一種金屬的合金。晶種層21的材料例如是銅以及鋁、鎂、鈹、鈣、鍶、鋇、鈧、釔、鑭、鈰、鐠(Pr)、釹(Nd)、釤(Sm)、銪(Eu)、釓(Gd)、鋱(Tb)、鏑(Dy)、鈥(Ho)、鉺(Er)、銩(Tm)、鐿(Yb)、鎦(Lu)、鉿(Hf)、釩(V)、鈮(Nb)、鉭(Ta)、鉻(Cr)、鉬(Mo)、鎢(W)、錳(Mn)、錸(Re)、矽及鍺至少其中之一所組成之合金。晶種層21可以利用化 學氣相沉積法、電化學電鍍(ECP)或是物理氣相沉積法法來形成。晶種層21可以提供優異的抗電移能力(electromigration resistance)。 A seed layer 21 is located between the barrier layer 20 and the filler metal layer 22. The material of the seed layer 21 may be the same material as the filling metal layer 22, but may be an alloy with another metal. The material of the seed layer 21 is, for example, copper and aluminum, magnesium, barium, calcium, strontium, barium, strontium, barium, strontium, strontium, strontium (Pr), strontium (Nd), strontium (Sm), bismuth (Eu), Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, V An alloy composed of at least one of niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), niobium (Re), niobium and tantalum. The seed layer 21 can be utilized Formed by vapor deposition, electrochemical plating (ECP) or physical vapor deposition. The seed layer 21 can provide excellent electromigration resistance.
填充金屬層22位於上述開口18中，覆蓋於晶種層21上。填充金屬層22的材料包括鎢元素、銅元素或其合金。 填充金屬層22的形成可以利用化學氣相沉積法、電化學電鍍(ECP)法或是物理氣相沉積法。 A fill metal layer 22 is located in the opening 18 above and covers the seed layer 21. The material filling the metal layer 22 includes a tungsten element, a copper element, or an alloy thereof. The filling metal layer 22 can be formed by chemical vapor deposition, electrochemical plating (ECP) or physical vapor deposition.
在一實施例中，上述之單金屬鑲嵌結構的阻障層20為銅錳合金。填充金屬層22為鎢元素或含鎢之合金。 In one embodiment, the barrier layer 20 of the single damascene structure described above is a copper-manganese alloy. The filler metal layer 22 is a tungsten element or an alloy containing tungsten.
在另一實施例中，上述之單金屬鑲嵌結構的阻障層20為銅錳合金。填充金屬層22為銅元素或含銅之合金。 In another embodiment, the barrier layer 20 of the single damascene structure described above is a copper-manganese alloy. The filler metal layer 22 is a copper element or an alloy containing copper.
在又一實施例中，上述之單金屬鑲嵌結構的阻障層20為銅錳鋁合金。填充金屬層22為銅元素或含銅之合金。 In still another embodiment, the barrier layer 20 of the single damascene structure described above is a copper manganese aluminum alloy. The filler metal layer 22 is a copper element or an alloy containing copper.
除了上述之單金屬鑲嵌結構之外，在另一實施例中，阻障層20可以是金屬氮化物導體，例如是氮化鈦，填充金屬層22可以是銅元素或含銅之合金。 In addition to the single damascene structure described above, in another embodiment, the barrier layer 20 can be a metal nitride conductor, such as titanium nitride, and the fill metal layer 22 can be a copper element or a copper-containing alloy.
圖2A至2D繪示本發明另一實施例之單金屬鑲嵌結構的製造方法的剖面示意圖。請參照圖2D，本實施例之單金屬鑲嵌結構的阻障層20為金屬氮化物導體，例如是氮化鈦，填充金屬層22為銅元素或含銅之合金。 2A to 2D are schematic cross-sectional views showing a method of fabricating a single damascene structure according to another embodiment of the present invention. Referring to FIG. 2D, the barrier layer 20 of the single damascene structure of the present embodiment is a metal nitride conductor, such as titanium nitride, and the filler metal layer 22 is a copper element or a copper-containing alloy.
請參照圖2A，單金屬鑲嵌結構的製造方法可以在已經形成犧牲層14以及介電層16的基底10上形成開口18，開口18裸露出基底10上的導電區12。開口18的形成方法可以利用微影與蝕刻法。導電區12、犧牲層14、介電層16以及基 底10的材料以及形成方法如上所述，於此不再贅述。 Referring to FIG. 2A, a method of fabricating a single damascene structure may form openings 18 on the substrate 10 on which the sacrificial layer 14 and the dielectric layer 16 have been formed, the openings 18 exposing the conductive regions 12 on the substrate 10. The method of forming the opening 18 can utilize lithography and etching. Conductive region 12, sacrificial layer 14, dielectric layer 16 and base The material of the bottom 10 and the forming method are as described above, and will not be described herein.
接著，在開口18的底部18b以及側壁18a形成合金層24。此合金層24包括第一金屬與第二金屬。第一金屬與第二金屬之材料不同。在一實施例中，第一金屬之材料與填充金屬層22之材料相同。在另一實施例中，第一金屬之材料與填充金屬層22之材料不同。第一金屬包括銅元素或其合金。第二金屬包括鈦元素或其合金。合金層24的形成方法例如是化學氣相沉積法。在一實施例中，第一金屬包括銅元素；第二金屬包括鈦元素。 Next, an alloy layer 24 is formed on the bottom portion 18b of the opening 18 and the side wall 18a. This alloy layer 24 includes a first metal and a second metal. The first metal is different from the material of the second metal. In an embodiment, the material of the first metal is the same as the material of the fill metal layer 22. In another embodiment, the material of the first metal is different than the material of the fill metal layer 22. The first metal includes a copper element or an alloy thereof. The second metal includes a titanium element or an alloy thereof. The method of forming the alloy layer 24 is, for example, a chemical vapor deposition method. In an embodiment, the first metal comprises a copper element; the second metal comprises a titanium element.
之後，請參照圖2B，於開口18中形成晶種層21以及填充金屬層22。晶種層21的材料可以是和填充金屬層22相同的材料，但也可以是與另一種金屬的合金。晶種層21的材料例如是銅以及鋁、鎂、鈹、鈣、鍶、鋇、鈧、釔、鑭、鈰、鐠(Pr)、釹(Nd)、釤(Sm)、銪(Eu)、釓(Gd)、鋱(Tb)、鏑(Dy)、鈥(Ho)、鉺(Er)、銩(Tm)、鐿(Yb)、鎦(Lu)、鉿(Hf)、釩(V)、鈮(Nb)、鉭(Ta)、鉻(Cr)、鉬(Mo)、鎢(W)、錳(Mn)、錸(Re)、矽及鍺至少其中之一所組成之合金。晶種層21可以利用化學氣相沉積法、電化學電鍍(ECP)法或是物理氣相沉積法來形成。填充金屬層22之材料包括銅元素或含銅之合金。填充金屬層22的形成方法包括化學氣相沉積法、電化學電鍍(ECP)法或是物理氣相沉積法。 Thereafter, referring to FIG. 2B, the seed layer 21 and the filling metal layer 22 are formed in the opening 18. The material of the seed layer 21 may be the same material as the filling metal layer 22, but may be an alloy with another metal. The material of the seed layer 21 is, for example, copper and aluminum, magnesium, barium, calcium, strontium, barium, strontium, barium, strontium, strontium, strontium (Pr), strontium (Nd), strontium (Sm), bismuth (Eu), Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, V An alloy composed of at least one of niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), niobium (Re), niobium and tantalum. The seed layer 21 can be formed by a chemical vapor deposition method, an electrochemical plating (ECP) method, or a physical vapor deposition method. The material filling the metal layer 22 includes a copper element or an alloy containing copper. The method of forming the filling metal layer 22 includes a chemical vapor deposition method, an electrochemical plating (ECP) method, or a physical vapor deposition method.
繼之，請參照圖2C，於含氮氣體中進行回火26，使合金層24之第二金屬氮化形成金屬氮化物層，做為阻障層20。含氮氣體包括氮氣、氨氣或其組合。進行回火26之後， 合金層24之第一金屬未被氮化，且與填充金屬層22或晶種層21熔合。 Next, referring to FIG. 2C, tempering 26 is performed in a nitrogen-containing gas, and the second metal of the alloy layer 24 is nitrided to form a metal nitride layer as the barrier layer 20. The nitrogen containing gas includes nitrogen, ammonia, or a combination thereof. After tempering 26, The first metal of alloy layer 24 is not nitrided and is fused to fill metal layer 22 or seed layer 21.
其後，請參照圖2D，移除介電層16上方的填充金屬層22，留下開口18之中的阻障層20、晶種層21以及填充金屬層22，做為單金屬鑲嵌結構。移除介電層16上方的填充金屬層22的方法例如是化學機械研磨法。 Thereafter, referring to FIG. 2D, the fill metal layer 22 over the dielectric layer 16 is removed, leaving the barrier layer 20, the seed layer 21, and the fill metal layer 22 in the opening 18 as a single damascene structure. The method of removing the filling metal layer 22 above the dielectric layer 16 is, for example, a chemical mechanical polishing method.
本發明實施例將後段(BEOL)的自我成長阻障銅層製程(Self-forming barrier copper process)引入前段的接觸窗製程可以降低接觸窗的接觸阻值，避免金屬擴散的問題，提升元件的可靠度。 In the embodiment of the present invention, the BEOL self-forming barrier copper process is introduced into the front contact window process to reduce the contact resistance of the contact window, avoid the problem of metal diffusion, and improve the reliability of the component. degree.
綜合以上所述，本發明上述之單金屬鑲嵌結構可以降低接觸阻值，避免金屬擴散的問題，提升元件的可靠度。 In summary, the single damascene structure of the present invention can reduce the contact resistance, avoid the problem of metal diffusion, and improve the reliability of the component.
本發明上述之單金屬鑲嵌結構之製造方法可以利用簡單的製程形成阻障層，避免金屬擴散的問題。 The above method for manufacturing a single damascene structure of the present invention can form a barrier layer by a simple process to avoid the problem of metal diffusion.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
10‧‧‧基底 10‧‧‧Base
10a‧‧‧表面 10a‧‧‧ surface
12‧‧‧導電區 12‧‧‧Conducting area
14‧‧‧犧牲層 14‧‧‧ Sacrifice layer
16‧‧‧介電層 16‧‧‧Dielectric layer
18‧‧‧開口 18‧‧‧ openings
18a‧‧‧側壁 18a‧‧‧ Sidewall
18b‧‧‧底部 18b‧‧‧ bottom
20‧‧‧阻障層 20‧‧‧Barrier layer
21‧‧‧晶種層 21‧‧‧ seed layer
22‧‧‧填充金屬層 22‧‧‧Filled metal layer
24‧‧‧合金層 24‧‧‧ alloy layer
26‧‧‧回火 26‧‧‧Return to fire
30‧‧‧單金屬鑲嵌結構 30‧‧‧Single metal inlay structure
圖1是依據本發明實施例繪示一種單金屬鑲嵌結構的剖面示意圖。 1 is a cross-sectional view showing a single damascene structure according to an embodiment of the invention.
圖2A至2D繪示本發明另一實施例之單金屬鑲嵌結構的製造方法的剖面示意圖。 2A to 2D are schematic cross-sectional views showing a method of fabricating a single damascene structure according to another embodiment of the present invention.
10‧‧‧基底 10‧‧‧Base
12‧‧‧導電區 12‧‧‧Conducting area
14‧‧‧犧牲層 14‧‧‧ Sacrifice layer
16‧‧‧介電層 16‧‧‧Dielectric layer
18‧‧‧開口 18‧‧‧ openings
18a‧‧‧側壁 18a‧‧‧ Sidewall
18b‧‧‧底部 18b‧‧‧ bottom
20‧‧‧阻障層 20‧‧‧Barrier layer
21‧‧‧晶種層 21‧‧‧ seed layer
22‧‧‧填充金屬層 22‧‧‧Filled metal layer
26‧‧‧回火 26‧‧‧Return to fire
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI653726B (en) | 2014-03-10 | 2019-03-11 | 聯華電子股份有限公司 | Semiconductor substrate and manufacturing method thereof |
| TWI844482B (en) * | 2015-10-30 | 2024-06-01 | 日商半導體能源研究所股份有限公司 | Method for forming capacitor, semiconductor device, module, and electronic device |
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2012
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI653726B (en) | 2014-03-10 | 2019-03-11 | 聯華電子股份有限公司 | Semiconductor substrate and manufacturing method thereof |
| TWI844482B (en) * | 2015-10-30 | 2024-06-01 | 日商半導體能源研究所股份有限公司 | Method for forming capacitor, semiconductor device, module, and electronic device |
| US12446302B2 (en) | 2015-10-30 | 2025-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming capacitor, semiconductor device, module, and electronic device |
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