TW201349384A - 製造太陽能電池使用之雙遮罩配置 - Google Patents
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Abstract
一配置用以在加工期間支撐基板,具有一晶圓載具。該載具具有一台座,以支撐該基板,並侷限該基板於預定位置。一內部遮罩建置以放置於該基板之上方,該內部遮罩具有一開口圖案,以遮蔽該基板不加工之部分,但暴露該基板之其餘部分,供進行加工。一外部遮罩建置以放置於該內部遮罩之上方,該外部遮罩具有一開口,用以暴露該內部遮罩具有開口圖案之部分,但覆蓋該內部遮罩之周邊。
Description
本案主張美國臨時專利申請案(Provisional Application)61/635,804號和61/639,052,申請日2012年4月19日和2012年4月26日之優先權,該案的全部內容併入本案作為參考。
本發明涉及遮罩製造,例如在製造太陽能電池時使用的遮罩。
在太陽能電池各種製造階段期間,必須使用遮罩將太陽能電池的某些部份與特定製程階段阻隔。例如,遮罩可用以形成接點或形成邊緣排除(edge exclusion),以預防該電池產生分流。也就是,在前側及背側具有接點的太陽能電池,用來形成接點的材料可能會沈積於晶圓的邊緣處,而使前側及背側的接點產生分流。因此,至少在製造前側或背側接點時最好使用遮罩阻隔該電池之邊緣。
換另一種情形,在製造矽太陽能電池時,應在背部表面沈積包覆金屬,以作為反光板及電導體。該金屬普遍為鋁,但該包覆金屬可能為任一金屬,在選擇時須從多方面考慮,例如成本,導電率,可焊性等。所沈積的薄層厚度可能從極薄,例如約10 nm(奈米)到極厚,例如2-3um(微米)。然而,在製程中必須防止該包覆金屬包過該矽晶圓的邊緣,因
為這種現象會在該太陽能電池前側表面與背側表面間,產生電阻連結,亦即分流(shunt)。為預防此種連結,須在該晶圓背側邊緣處製造一排除區。通常該排除區尺寸小於2 mm寬,但最好將排除區製成越薄越好。
一種形成該排除區的方法是使用遮罩;然而,使用遮罩具有許多挑戰。由於在太陽能工業本身的高競爭性,該遮罩需以極廉價來生產。同時,由於太陽能製造配備之高生產率需求(普遍一個小時生產1,500-2,500個),該遮罩需在高產量製造下,能快速且簡易使用。同時,因為該遮罩是用以預防薄層沈積在該晶圓特定部分上,遮罩必須能吸收且可容納積累之沈積。再者,因為薄層沈積是在升高的溫度下進行,該遮罩需可在升高的溫度下正常運作,例如在高達350℃下,仍能準確地維持該排除區寬度,但同時又能適應基板由於熱應力而產生之翹曲。
以下發明簡述提供作為對本發明數種面向及技術特徵之基本理解。發明簡述並非對本發明之廣泛介紹,也因此並非用來特別指出本發明之關鍵性或是重要元件,也非用來界定本發明之範圍。其唯一目的僅在以簡單之方式展示本發明之數種概念,並作為以下發明詳細說明之前言。
本發明之實施例使用遮罩解決上述問題,該遮罩為一雙遮罩配置。該二元遮罩系統建置以遮蔽半導體晶圓,並包含一內部遮罩及一外部遮罩。內部遮罩由一平坦金屬片構成,具有孔洞可暴露該晶圓需加工之部分;外部遮罩則建置以覆蓋並遮蔽該內部遮罩。該外部遮罩具有一開放切口,其尺寸及形狀與該晶圓尺寸及形狀相似。該外部遮罩厚度比該內
部遮罩厚度更厚。一遮罩邊框建置以支撐該內部遮罩及外部遮罩,以使該外部遮罩夾在該遮罩邊框及該內部遮罩間。在一實施例中,該雙遮罩配置是用以提供邊緣隔絕,此時該內部遮罩的開放切口尺寸比該晶圓略小,故當該內部遮罩置於該晶圓上時能遮蓋該晶圓周圍邊緣,且該外部晶圓的開放切口略小於該內部遮罩的開放切口。一上方邊框載具用以保持該內部遮罩及外部遮罩,並固定該內部遮罩及外部遮罩至該晶圓台座。
一上方遮罩或外部遮罩可由例如約0.03”厚的鋁,鐵或其他相似材料製成,且建置以與一基板載具配對。一內部遮罩由一極薄,例如約0.001至0.003”厚的平坦鐵片或其他磁性材料製成,並建置以套在於該外部遮罩內。
根據其他實施例,用以在加工期間支撐晶圓之配置包括:一晶圓載具或台座,具有一提升之邊框,該提升邊框具有一凹部,以環繞並支撐一晶圓並侷限該晶圓置於預定之位置;一內部遮罩,建置以放置於該提升邊框之上方,該內部遮罩具有一開口配置,建置以遮蔽該晶圓之部分並暴露其餘之部分;及一外部遮罩,建置以覆蓋該提升邊框,並放置於該內部遮罩之上方,該外部遮罩具有一單一開口,建置以部分覆蓋該內部遮罩。一上方邊框載具,可用以保持該內部遮罩及外部遮罩,並固定該內部遮罩及外部遮罩至該晶圓台座。
磁鐵位於該台座內,並以替換極性N-S-N-S-N圍繞該邊框全部,或在該台座整個表面下方全域,並直接在該晶圓下方。該外部遮罩及內部遮罩設計成只藉由磁力支撐在該邊框上,以能簡易並快速裝載及卸載基板。
該遮罩組件可從該晶圓載具及支撐邊框卸除,以裝載基板至該載具內。外部及內部遮罩兩者拉升之後,成為該遮罩組件之部分。但當該晶圓置於該晶圓儲存盒內之載具上後,該遮罩組件即下降回到該載具上。該內部遮罩與該晶圓之上方表面重疊。在該載具邊框內的磁鐵拉下該內部遮罩,以與該基板緊密接觸。如此即在該晶圓邊緣上形成一緊密依從的密封。該外部遮罩設計成可防止沈積形成於該薄的依從性內部遮罩上。如上所述,該沈積過程可能造成該內部遮罩升溫,導致該遮罩翹曲並鬆弛其與該晶圓之接觸。若該遮罩與該晶圓之接觸鬆弛,金屬薄層將沈積於該基板晶圓表面之排除區。但藉由該磁鐵所形成的囊狀包容及摩擦力,可在傳送及沈積期間維持該基板與遮罩,不會相對移動,而該外部遮罩則可防止薄層沈積於該內部遮罩上,並防止該內部遮罩發生翹曲。
該遮罩組件可定期從該具有載具之系統移除,其方式是使用真空載具替換器。該載具替換器為一可攜式真空包覆,附有載具傳輸裝置。使該載具交換能如「空中加油」般,不需停止該系統之連續操作即可進行。
100‧‧‧載具
105、230、405、1005‧‧‧台座
110‧‧‧陶瓷桿架棒、陶瓷邊框
115‧‧‧升降板
120‧‧‧晶圓、基板
125、225‧‧‧傳輸軌道
200‧‧‧載具支撐
205、605‧‧‧晶圓載具
210、232、430‧‧‧邊框
215‧‧‧升降桿
230、405‧‧‧基底
235、432、632、762‧‧‧凹部
240、440、866‧‧‧包囊
245、445‧‧‧外部遮罩
252‧‧‧升降板
420‧‧‧晶圓
434、634、1034‧‧‧磁鐵
436‧‧‧遮罩邊框
450‧‧‧內部遮罩
452‧‧‧邊緣處
660、1082‧‧‧對位銷
836‧‧‧上方邊框
862‧‧‧長形桿
868‧‧‧對位孔
1080‧‧‧靜電載盤
所附的圖式納入本件專利說明書中,並成為其一部份,是用來例示數種實施例,並與本案的說明內容共同用來說明及展示本發明的原理。圖式的目的只在以圖形方式例示本發明實施例的主要特徵。圖式並不是用來顯示實際上的範例的全部特徵,也不是用來表示其中各元件之相對尺寸,或其比例。
圖1顯示根據本發明一實施例之多晶圓載具,但並非用以供遮罩加工
使用。
圖2A-2E表示根據本發明數個實施例中的多晶圓載具數種形式之示意圖,該載具具有一雙遮罩配置。
圖3表示本發明一實施例之外部遮罩外觀圖,顯示該內部遮罩套裝於其中。
圖4表示本發明一實施例的邊框,外部遮罩及內部遮罩之部分放大截面圖。
圖4A顯示本發明另一實施例,可用以例如在一晶圓背側形成接點圖形。
圖5表示本發明一實施例之內部遮罩示意圖,該遮罩用於形成邊緣隔離。
圖6表示本發明一實施例之單一晶圓載具。
圖7表示本發明一實施例之外部遮罩底面圖。
圖8表示本發明一實施例之上方邊框外觀圖,該邊框用以支撐該內部遮罩及外部遮罩。
圖9表示本發明一實施例之內部遮罩形狀示意圖,該遮罩用以在該晶圓製造多數孔洞。
圖10表示本發明一實施例之台座外觀圖,該台座用以與圖9之遮罩配合使用。
圖10A表示本發明一實施例之台座側視圖,其形式為一靜電載盤,具有彈性裝載對位銷於其中。
在傳統半導體晶圓製造中普遍為個別加工,而在太陽能電池製造中,則是數個晶圓同時製造。為簡化說明起見,以下描述將以同時加工3個晶圓為例;然而,必須說明的是,該實施例可延伸至同時加工任意數量之晶圓。
圖1顯示根據本發明一實施例之多晶圓(multi-wafer)載具,但並非用以做遮罩加工。也就是,在製造太陽能電池時,某些加工該晶圓之步驟並不需遮蔽。在此狀況下,可利用圖1之載具。下面將參考其餘圖式,解說使用本發明雙遮罩配置之載具。因此,在數個實施例,不需遮蔽之加工步驟可利用圖1之載具,而需要遮蔽之加工步驟可利用其餘圖式之載具。如圖1所示,此實施例之多晶圓載具結構相當簡單且便宜。雖然圖1之載具顯示成建置以傳輸3個晶圓,須說明的是,該載具可建置用於不同數量之晶圓。同時,亦須說明的是,每個加工腔也可建置以同時容納數個載具,因而使用數個載具同時加工數個晶圓。
圖1之載具100由一簡單的板狀台座105構成,其材質可例如為鋁氮化物,並藉由一陶瓷邊框或陶瓷桿架110支撐。該陶瓷邊框110提供該台座105與腔室中其他元件間提升的隔熱。一升降板115位於每一晶圓120所在之側面,以使晶圓可提升,以離開該台座105。傳輸軌道125位於該邊框110之兩側,以使該載具可於該系統內傳輸。
當加工該晶圓需要使用遮罩時,可將多數遮罩各自置放於每一晶圓之上方,或僅以一遮罩同時覆蓋3個晶圓。該遮罩可利用例如磁鐵保持其位置。然而,為準確加工,該遮罩需製成極薄,並因此常時會因加工時的熱應力變形。此外,薄的遮罩導致快速累積沈積物,而該沈積物
會影響該遮罩的準確放置及準確遮蔽。因此,根據下述本發明之實施例,使用該雙遮罩配置可以改善以上缺點。
圖2A-2E顯示根據本發明數種實施例之多晶圓載具之不同面向。該載具具有一雙遮罩配置。圖2A顯示一多晶圓載具,具有雙遮罩配置,其中該遮罩配置位於下方位置,以使其內部遮罩與晶圓做緊密的物理接觸;圖2B顯示一多晶圓載具,具有雙遮罩配置,其中該遮罩配置位於抬升的位置,用以替換該晶圓;圖2C顯示一多晶圓載具,具有雙遮罩配置,其中包括遮罩升降板,用以裝載/卸載晶圓;圖2D顯示一多晶圓載具之部份截面圖,該載具具有雙遮罩配置,其中該遮罩配置及該晶圓升降板位於一提升位置;而圖2E顯示一多晶圓載具之部份截面圖,該載具具有雙遮罩配置,其中該遮罩配置及該晶圓升降機位於下方位置。
請參照圖2A。該多晶圓載具,也稱為載具支撐200具有3個分別的單一晶圓載具或台座105,藉由一台座邊框或台座桿架110支撐,該台座邊框由例如陶瓷製成。每一單一晶圓載具105建置以保持單一晶圓與一雙遮罩配置。在圖2A,該雙遮罩配置位於一下方位置,但無晶圓位於任一載具內,故可顯示該載具之結構。在圖2B中,該雙遮罩配置位於一提升位置。同樣也無晶圓位於任一載具內。在圖2A-2E之實施例中,使用一升降桿215以提升或下降該雙遮罩配置;然而,為降低成本及減少複雜度,升降桿215可不需配置,並以手動抬升該雙遮罩配置。與圖1所示相同,傳輸軌道225位於該邊框210之兩側上,以使該載具200可於該系統內傳輸。
每一單一晶圓載具205具有一基底230(可見於圖2B),
具有一提升之邊框232,邊框232內具有一凹部235,以藉由一晶圓之邊緣處支撐晶圓,成懸空狀態。該基底230與該邊框232形成一包囊240,位在該懸空的晶圓下方。這種方式有利於捕捉破損晶圓的碎片。在某些實施例,該邊框232可從該台座230分開。外部遮罩245建置以跨置於該邊框232上,以覆蓋該邊框232並覆蓋該內部遮罩之周邊處,但暴露該內部遮罩之中心部分,該暴露部分與該晶圓相對應。此可藉由圖4實施例之截面圖例示。
在圖4中,台座或基底405具有提升的邊框430,其上具有凹部432,用來支撐晶圓420周邊處。該具有邊框430之台座405形成包囊440,且該晶圓懸於該包囊上方。一系列之磁鐵434位於該提升的邊框430內,以圍繞該晶圓420周邊。在某些實施例,特別是用於高溫操作之實例,該磁鐵434可由釤鈷合金(SmCo)製成。內部遮罩450位於該提升之邊框430及該晶圓420上方,並藉由磁鐵434保持其位置,以使其實際接觸該晶圓。外部遮罩445置於該內部遮罩450上方,並與其實際接觸,以使其覆蓋該內部遮罩450之周邊處,但該內部遮罩用以傳送加工至晶圓之區域,則不為該外部遮罩445所遮蔽。圖3顯示一外部遮罩245之實例。在此例子,該外部遮罩245由對折的鋁片製成,其中該內部遮罩藉由該外部遮罩覆蓋,但不覆蓋到邊緣處452的狹窄範圍。這是因為該例子是用以做邊緣分流排除區加工。圖5顯示該內部遮罩用以做邊緣分流排除區加工的另一實例。其中,該內部遮罩為一平坦金屬片,具有一開口,其尺寸及形狀與晶圓尺寸及形狀相同,但比晶圓尺寸略小例如1-2 mm。在圖4之實施例,遮罩邊框436用以支撐並提升該內部遮罩及外部遮罩離開該載具。
在此一結構下,該外部遮罩夾在該遮罩邊框436及該內部遮罩450間。
圖4顯示另一實施例,其可利用於例如在一晶圓背側形成接點圖形。在此實施例中,該台座形成一上方平台,以從整個表面支撐該晶圓。磁鐵434嵌於該台座整個區域中,並位於該台座上方表面下方。該內部遮罩450覆蓋該晶圓420整個表面,並具有多數孔洞,以配合所需的接點設計。
現回到圖2A-2E。在圖中,升降桿215可用以同時抬升該外部遮罩與該內部遮罩。同時,晶圓升降板252可用於抬升該晶圓離開該邊框230,以使其可利用一機械手臂替換新的晶圓進行加工。然而,升降桿215及升降板252可不需使用,此時抬升該遮罩及替換晶圓之操作可用手動取代。
上述參考圖4之實施例中,該載具支撐該晶圓之邊緣處,使該晶圓處於懸空狀態。該包囊形成於該晶圓下方,以捕捉破損晶圓的碎片,並防止沈積材料形成在晶圓邊緣。反之,在圖4A之實施例中,載具是支撐該晶圓整個表面。在濺鍍或其他形式之加工時,該遮罩組件下降至適當位置,並手動或自動抬升,以裝載及卸載晶圓。載具上一系列磁鐵協助固定該內部遮罩於適當位置,並使該內部遮罩與該晶圓緊密接觸。重複使用後,該外部遮罩及內部遮罩即可替換,而其餘載具組件則可重複使用。該邊框210,也可稱為遮罩組件側桿,是由低熱膨脹係數材料製成,如氧化鋁或鈦。
根據上述實施例,該內部遮罩與該基板之間建立一無縫隙之緊密接觸。該外部遮罩保護該內部遮罩,該載具及該邊框,防止其上沈
積材料。在此描繪之實施例中,該外部遮罩及內部遮罩之開口為準正方形(pseudo-square shape),適於應用在製作單晶太陽能電池時,進行邊緣分流隔離加工。在應用於其他加工時,該內部遮罩具有一特定開口配置,而外部遮罩具有該準正方形開口。所稱之準正方形是指正方形,但4角形成倒角,其形狀與切割晶圓由來的圓錠形狀相同。當然,若使用多晶正方形晶圓,該外部及內部遮罩開口都可以是正方形。
圖6顯示本發明一實施例之單一晶圓載具605。該晶圓以其邊緣停留在凹部632上。磁鐵634以虛線顯示,位於該載具內,並環繞整個晶圓。對位銷660用以將該外部遮罩對準該載具605。圖7顯示本發明一實施例之外部遮罩之底面圖。圖中顯示該外部遮罩745具有對位孔或凹部762,而與該載具605之對位銷660相對準。
圖8顯示本發明一實施例之上方邊框836,用以保持該外部遮罩及內部遮罩,並固定該2遮罩於該台座。該上方邊框836由例如兩2條長形桿862製成,並藉由兩個橫向桿連結。該外部遮罩保持在包囊866內。對位孔868用以將該上方邊框對準該台座。
圖9顯示本發明一實例的內部遮罩,具有一孔洞圖形設計。該內部遮罩用以例如在晶圓上形成多數接點。此一內部遮罩可與圖10之台座共同使用。其中,多數磁鐵1034以交替極化方向配置,分布於整個區域,並位於該晶圓表面下方。在此實施例中無須在該台座內配備具提升的邊框,而可形成一平坦平台,如圖10A所示。
圖10A顯示本發明一實例的台座1005,其形式為一靜電載盤(ESC)1080。在此實施例中,該ESC 1080上方為一平坦平面,且無具
提升的邊框,也無包囊可供接收破損基板的碎片。此外,在此實施例中,使用彈性裝載對位銷1082,以提供該基板120的準確對準。當該遮罩置於該基板上方時,會壓迫該對位銷1082,使其回縮而不突出於該基板。該對位銷只位於兩側:1支對位銷位於一側,另有2支對位銷位於與第一側呈90°角方向之側面。因此該基板可向此對位銷推壓,以提供該基板之對準。
從上述實施例可瞭解,該內部磁化遮罩應為極薄,以使其具彈性,且可與該基板表面形成平整。該基板支架可為一邊框,一靜電載盤,一平坦板等,只要能使磁鐵嵌於該基板下方,以保持該內部遮罩與該基板之接觸狀態即可。當該遮罩為一開放區域遮罩,只遮蔽晶圓之外側邊緣,例如用以作邊緣隔離之應用時,該磁鐵可沿該遮罩之開口邊緣配置。但如該遮罩是在該基板表面上形成孔洞之遮罩時,該磁鐵可配置於該遮罩下方,分布於該遮罩整個區域。本發明的雙遮罩配置可用於數種加工,例如沈積,植入,反應式離子蝕刻加工等。例如一觸控面板可由ITO之平面沈積製成,再經由一RIE製程,以透過遮罩使該ITO層產生圖案。
本發明既已根據特定實例說明如上,但本發明並不限於上述實施例。特別是,習於斯藝之人士均可在不脫離本發明之精神與範圍之下,作出各種不同之變化及修改。本發明之範圍應由以下所附的申請專利範圍界定。
200‧‧‧載具支撐
210‧‧‧邊框
215‧‧‧升降桿
225、232‧‧‧傳輸軌道
230‧‧‧基底、台座
235‧‧‧凹部
240‧‧‧包囊
245‧‧‧外部遮罩
Claims (28)
- 一二元遮罩系統,用以遮蔽半導體晶圓,包括:一內部遮罩,由一平坦金屬片構成,其內具有至少一開口,其形狀與要傳送至該晶圓之圖案相同,以使該內部遮罩置於該晶圓上時,可覆蓋該晶圓之部分;及一外部遮罩,建置以放置在該內部遮罩上方,並遮蔽該內部遮罩,該外部遮罩具有一開放切口,其尺寸設計成可覆蓋該內部遮罩之邊緣,該外部遮罩厚度厚於該內部遮罩厚度。
- 如申請專利範圍第1項的二元遮罩系統,其中該內部遮罩之開口設計成只覆蓋該晶圓邊緣。
- 如申請專利範圍第1項的二元遮罩系統,其中該內部遮罩包括多數開口,設計以在該晶圓一表面上方產生一重複設計。
- 如申請專利範圍第1項的二元遮罩系統,其中該內部遮罩由一磁性材料製成。
- 如申請專利範圍第1項的二元遮罩系統,其中內部遮罩具有0.001至0.003英吋之厚度。
- 如申請專利範圍第1項的二元遮罩系統,其中該外部遮罩由一磁性材料製成。
- 如申請專利範圍第1項的二元遮罩系統,其中該外部遮罩由鋁製成。
- 如申請專利範圍第1項的二元遮罩系統,其中該內部遮罩由鋼製成。
- 如申請專利範圍第1項的二元遮罩系統,更包括一遮罩邊框,建置以支撐該內部及外部遮罩,以使該外部遮罩夾在該遮罩邊框與該內部遮 罩間。
- 一種用於在加工期間支撐晶圓之裝置,包括:一晶圓載具,具有一平台,用以支撐一晶圓;一內部遮罩,建置以放置於該晶圓之上方,該內部遮罩具有一開口圖案,用以遮蔽該晶圓之部分並暴露該晶圓其餘部分;一外部遮罩,建置以放置於該載具上方,並位於該內部遮罩上方,該外部遮罩具有一開口,建置以部分覆蓋該內部遮罩。
- 如申請專利範圍第10項的裝置,其中該內部遮罩由一平坦金屬片構成,具有開放切口,其尺寸比該晶圓略小,以在該內部遮罩置於該晶圓上時能覆蓋該晶圓之邊緣。
- 如申請專利範圍第10項的裝置,其中該內部遮罩由鋼製成。
- 如申請專利範圍第10項的裝置,其中內部遮罩具有一0.001至0.003吋之厚度。
- 如申請專利範圍第10項的裝置,更包括數個磁鐵,嵌入該載具內,並建置以將該內部遮罩拉至與該晶圓接觸。
- 如申請專利範圍第14項的裝置,其中該外部遮罩由磁性材料製成,用以分流該磁鐵之磁場,並用以保持該外部遮罩與該內部遮罩之接觸。
- 如申請專利範圍第10項的裝置,其中該外部遮罩由鋁製成,並停留與該內部遮罩之上方實際接觸。
- 如申請專利範圍第10項的裝置,更包括載具支撐,建置以同時支撐數個晶圓載具,每個晶圓載具具有相對應之內部及外部遮罩組件。
- 如申請專利範圍第17項的裝置,其中該載具支撐包括陶瓷桿,以支撐 該數個晶圓載具。
- 如申請專利範圍第17項的裝置,其中該載具支撐更包括軌道,建置以在一加工系統中傳輸該晶圓載具。
- 如申請專利範圍第17項的裝置,其中該載具支撐更包括遮罩升降器,建置以提升該外部及內部遮罩離開該晶圓載具。
- 如申請專利範圍第17項的裝置,其中該載具支撐更包括晶圓提升桿,建置以提升該晶圓離開該晶圓載具。
- 如申請專利範圍第10項的裝置,其中該外部及內部遮罩建置成只藉由磁力保持於該載具,以能夠簡易且快速裝載及卸載晶圓。
- 如申請專利範圍第10項的裝置,其中該載具包括一台座,具有一提升之邊框,該邊框具有一凹部,以定義出位於該晶圓下方之包囊,使該晶圓藉由該晶圓周邊停留在該凹部上方而懸在在該包囊上方。
- 如申請專利範圍第10項的裝置,其中該載具包括對位銷,且該外部遮罩具有與其相對應之對準凹槽。
- 如申請專利範圍第10項的裝置,其中該外部遮罩包括一對折之鋁片。
- 如申請專利範圍第14項的裝置,其中數個磁鐵由釤鈷合金製成。
- 如申請專利範圍第10項的裝置,更包括一遮罩邊框,建置以支撐該內部遮罩及外部遮罩,以使該內部遮罩夾在該遮罩邊框及該外部遮罩間。
- 如申請專利範圍第12項的裝置,其中該磁鐵環繞該邊框全部,並以轉換極性N-S-N-S-N方式配置。
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| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
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| KR102762543B1 (ko) | 2016-12-14 | 2025-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
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| US11251019B2 (en) * | 2016-12-15 | 2022-02-15 | Toyota Jidosha Kabushiki Kaisha | Plasma device |
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| US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
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- 2013-04-19 CN CN201380026127.4A patent/CN104685095B/zh not_active Expired - Fee Related
- 2013-04-19 US US13/866,856 patent/US9525099B2/en active Active
- 2013-04-19 WO PCT/US2013/037464 patent/WO2013159050A1/en not_active Ceased
- 2013-04-19 EP EP13777473.3A patent/EP2839052A4/en not_active Withdrawn
- 2013-04-19 SG SG10201608512QA patent/SG10201608512QA/en unknown
- 2013-04-19 MY MYPI2014703101A patent/MY167662A/en unknown
- 2013-04-19 TW TW102113908A patent/TWI518839B/zh not_active IP Right Cessation
- 2013-04-19 SG SG11201406746RA patent/SG11201406746RA/en unknown
- 2013-04-19 JP JP2015507232A patent/JP6243898B2/ja not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9525099B2 (en) | 2012-04-19 | 2016-12-20 | Intevac, Inc. | Dual-mask arrangement for solar cell fabrication |
| US9502276B2 (en) | 2012-04-26 | 2016-11-22 | Intevac, Inc. | System architecture for vacuum processing |
| US10062600B2 (en) | 2012-04-26 | 2018-08-28 | Intevac, Inc. | System and method for bi-facial processing of substrates |
| TWI696231B (zh) * | 2014-02-20 | 2020-06-11 | 因特瓦克公司 | 基板的雙面加工系統及方法 |
| US9543114B2 (en) | 2014-08-05 | 2017-01-10 | Intevac, Inc. | Implant masking and alignment system with rollers |
| TWI739597B (zh) * | 2020-09-15 | 2021-09-11 | 宏進金屬科技股份有限公司 | 製造散熱片的方法及散熱片 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2839052A4 (en) | 2015-06-10 |
| SG10201608512QA (en) | 2016-12-29 |
| US20130276978A1 (en) | 2013-10-24 |
| CN104685095A (zh) | 2015-06-03 |
| KR20150053733A (ko) | 2015-05-18 |
| JP6243898B2 (ja) | 2017-12-06 |
| EP2839052A1 (en) | 2015-02-25 |
| MY167662A (en) | 2018-09-21 |
| KR102104688B1 (ko) | 2020-05-29 |
| CN104685095B (zh) | 2017-12-29 |
| JP2015520799A (ja) | 2015-07-23 |
| WO2013159050A1 (en) | 2013-10-24 |
| TWI518839B (zh) | 2016-01-21 |
| US9525099B2 (en) | 2016-12-20 |
| SG11201406746RA (en) | 2015-03-30 |
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