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TW201347220A - Structure of solar cell and texturing method thereof - Google Patents

Structure of solar cell and texturing method thereof Download PDF

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Publication number
TW201347220A
TW201347220A TW101116044A TW101116044A TW201347220A TW 201347220 A TW201347220 A TW 201347220A TW 101116044 A TW101116044 A TW 101116044A TW 101116044 A TW101116044 A TW 101116044A TW 201347220 A TW201347220 A TW 201347220A
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grooves
substrate
light receiving
wire saws
receiving surface
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TW101116044A
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Chinese (zh)
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TWI456781B (en
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Ta-Ming Kuan
Chih-Chiang Huang
li-guo Wu
Cheng-Yeh Yu
Sy-Chnang Wu
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Tsec Corp
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Abstract

The present invention provides a texturing method for the surface of solar cells. First, a first substrate is provided, which has at least a first light receiving face. Next, a plurality of parallel wire saws is provided and directly in contact with the first light receiving face. Finally, wire saws are moved along their own long axial direction to concurrently form a plurality of first recessed structure on the first receiving face.

Description

太陽能電池結構及其表面粗糙化方法Solar cell structure and surface roughening method thereof

本發明係關於一種太陽能電池結構及其表面粗糙化方法,特別是一種利用線鋸機台以粗糙化太陽能電池表面結構的方法。The present invention relates to a solar cell structure and a surface roughening method thereof, and more particularly to a method of roughening a surface structure of a solar cell using a wire saw machine.

隨著消耗性能源日益枯竭,太陽能等替代能源的開發早已成為重要之發展方向。一般而言,太陽能模組的工作原理係利用含有PN接面之太陽能電池(solar cells)接收來自太陽光之輻射能源,俾以將輻射能轉換成電能,其中,太陽能電池的主要材料包括有半導體材料,如單晶矽、多晶矽、非晶矽之矽基板或III-V族化合物之半導體材料等。而為了進一步增加太陽能電池所產生之光電流,在製程中會先在太陽能電池之受光面進行一表面粗糙化(texturing)程序,以降低光源在受光正面的反射率。With the depletion of consumable energy, the development of alternative energy sources such as solar energy has long been an important development direction. In general, the solar module works by using solar cells containing PN junctions to receive radiant energy from sunlight, and converting radiant energy into electrical energy. The main materials of the solar cells include semiconductors. Materials such as single crystal germanium, polycrystalline germanium, amorphous germanium germanium or III-V compound semiconductor materials. In order to further increase the photocurrent generated by the solar cell, a surface texturing process is first performed on the light receiving surface of the solar cell in the process to reduce the reflectance of the light source on the front side of the light receiving surface.

目前,已有多種可行的表面粗糙化程序被揭露。該些表面粗糙化程序包含有濕式蝕刻(wet etching)、噴砂製程(sandblasting)、陽極處理(anodic oxidation)、電漿蝕刻(plasma etching)、雷射切溝及光學微影等等製程,其中,在成本及方便性的考量下,濕式蝕刻仍是最廣為被業界所採用之製程。一般而言,若要透過濕式蝕刻製程而得到所需的粗糙化程度,通常需針對不同組成或性質的半導體基板採用相對應之蝕刻液。舉例而言,多晶矽基板一般需搭配酸性蝕刻液;而單晶矽基板係採用鹼性蝕刻液。因此,無法以單一蝕刻液滿足多種半導體材料的蝕刻需求。此外,濕式蝕刻製程通常包含多道的處理程序,例如沖洗、酸鹼中和、乾燥及廢液回收等步驟,除了不利於製造成本外,也會造成嚴重的環境污染。At present, a variety of feasible surface roughening procedures have been disclosed. The surface roughening procedures include wet etching, sandblasting, anodic oxidation, plasma etching, laser dicing, and optical lithography, among which processes are performed, among which the wet etching process includes wet etching, sandblasting, anodic oxidation, plasma etching, laser dicing, and optical lithography. Under the consideration of cost and convenience, wet etching is still the most widely used process in the industry. In general, to achieve the desired degree of roughening through a wet etching process, it is generally necessary to use a corresponding etching solution for a semiconductor substrate of different composition or properties. For example, a polycrystalline germanium substrate generally requires an acidic etching solution; and a single crystal germanium substrate is an alkaline etching solution. Therefore, it is not possible to satisfy the etching requirements of various semiconductor materials with a single etching solution. In addition, the wet etching process usually involves multiple processing procedures, such as rinsing, acid-base neutralization, drying, and waste liquid recovery, which, in addition to being disadvantageous to manufacturing costs, can also cause serious environmental pollution.

因此,有必要提供一種太陽能電池結構及其表面粗糙化方法。除了可以針對不同組成的半導體材料同時進行粗糙化步驟外,另可以進一步簡化粗糙化流程,使得太陽能電池之生產成本得以降低。Therefore, it is necessary to provide a solar cell structure and a method of roughening the surface thereof. In addition to the simultaneous roughening step for semiconductor materials of different compositions, the roughening process can be further simplified, so that the production cost of the solar cell can be reduced.

本發明之目的在於提供一種太陽能電池結構及其表面粗糙化方法,以簡化粗糙化流程並節省製造成本。It is an object of the present invention to provide a solar cell structure and a surface roughening method thereof to simplify the roughening process and save manufacturing costs.

為達到上述目的,根據本發明之一實施例,係提供一種太陽能電池表面粗糙化的方法,包含有提供一第一基底,具有至少一第一受光面;提供複數條彼此平行之線鋸,且線鋸係直接接觸該第一受光面;最後沿著線鋸之長軸方線移動線鋸,以於該第一受光面同時形成複數個第一凹槽。In order to achieve the above object, a method for roughening a surface of a solar cell according to an embodiment of the present invention includes providing a first substrate having at least one first light receiving surface, and providing a plurality of wire saws parallel to each other, and The wire saw directly contacts the first light receiving surface; finally, the wire saw is moved along the long axis square line of the wire saw, so that the first light receiving surface simultaneously forms a plurality of first grooves.

根據本發明之另一實施例,係提供一種太陽能電池結構,包含有一基底,具有至少一受光面;以及複數個凹槽,位於受光面,其中凹槽具有格狀(grid)排列佈局,以構成一粗糙化結構。According to another embodiment of the present invention, a solar cell structure includes a substrate having at least one light receiving surface, and a plurality of grooves on the light receiving surface, wherein the grooves have a grid arrangement to form A roughened structure.

本發明係利用物理性的粗糙化製程,而於太陽能電池之表面形成一粗糙化結構。除了可以對不同的半導體材料進行相同的粗糙化步驟外,更可以進一步簡省時間成本、製造成本並降低對環境的衝擊性。The present invention utilizes a physical roughening process to form a roughened structure on the surface of the solar cell. In addition to the same roughening step for different semiconductor materials, it is possible to further simplify time and cost, and reduce environmental impact.

為讓本發明之上述目的、特徵及優點能更明顯易懂,下文特舉較佳實施方式,並配合所附圖式,作詳細說明如下。然而如下之較佳實施方式與圖式僅供參考與說明用,並非用來對本發明加以限制者。The above described objects, features and advantages of the present invention will become more apparent from the description of the appended claims. However, the following preferred embodiments and drawings are for illustrative purposes only and are not intended to limit the invention.

首先請參閱第1A圖,第1A圖為依據本發明之一實施例所繪示的一種太陽能電池表面粗糙化結構之俯視圖。如第1A圖所示,提供一基底10,其具有至少一可接受外界輻射光源之受光面12,舉例而言,輻射光源可以是太陽光或其他可供半導體層吸收之電磁波段。一粗糙化結構1,形成於受光面12上,且粗糙化結構1包含有複數個凹槽16、18。在此第一實施例中,凹槽16、18係呈現矩形(rectangular)格狀排列之佈局,使得彼此平行之相鄰凹槽16、18間分別具有一第一間距a及一第二間距b,且依據不同產品需求,第一間距a之數值可相同或相異於第二間距b。此外,在本實施例中,彼此平行之各凹槽16、18分別具有相同之深度及寬度。Referring first to FIG. 1A, FIG. 1A is a top plan view of a solar cell surface roughening structure according to an embodiment of the invention. As shown in FIG. 1A, a substrate 10 is provided having at least one light receiving surface 12 that accepts an external source of radiation. For example, the source of radiation may be sunlight or other electromagnetic band that is absorbing by the semiconductor layer. A roughened structure 1 is formed on the light receiving surface 12, and the roughened structure 1 includes a plurality of grooves 16, 18. In this first embodiment, the grooves 16, 18 are arranged in a rectangular lattice arrangement such that adjacent grooves 16 and 18 parallel to each other have a first spacing a and a second spacing b, respectively. And according to different product requirements, the values of the first spacing a may be the same or different from the second spacing b. Further, in the present embodiment, the grooves 16, 18 which are parallel to each other have the same depth and width, respectively.

請參閱如第1B圖及第1C圖,第1B圖及第1C圖係根據本發明之其他實施例所繪示之太陽能電池表面粗糙化結構之俯視圖。相異於第1A圖所繪示的矩形格狀排列佈局,第1B圖及第1C圖分別揭露粗糙化結構1可以為菱形(diamond)格狀排列或三角形(triangular)格狀排列之特徵。類似如第1A圖,第1B圖所示之粗糙化結構1同樣包含有複數個凹槽16、18,且彼此平行之各凹槽16、18分別具有相同之深度及寬度,然而第二實施例與第一實施例之不同之處在於凹槽16、18係呈現菱形格狀排列之佈局,亦即,兩凹槽16、18間的夾角非呈直角,而是呈銳角或鈍角。同樣地,第1C圖中之粗糙化結構1也類似如第1A圖所示之結構,然而此第三實施例之粗糙化結構1另外包含一凹槽20,使得凹槽16、18、20呈現三角形格狀排列之佈局,且彼此平行相鄰之凹槽20間具有一第三間距c。依據不同產品需求,第三間距c之數值可相同或相異於第一間距a及/或第二間距b之數值。除了以上所述之主要差異外,第一實施例至第三實施例之其他技術特徵大體相同,為了簡潔起見,在此便不再贅述。在此需特別注意的是,在上述第一到第三實施例中,凹槽16、18、20內及/或各凹槽16、18、20間之受光面12可以另外具有一微結構,此微結構之特徵將於下文中詳述之。Please refer to FIG. 1B and FIG. 1C. FIG. 1B and FIG. 1C are top views of a surface roughening structure of a solar cell according to another embodiment of the present invention. Different from the rectangular grid layout shown in FIG. 1A, FIG. 1B and FIG. 1C respectively disclose that the roughened structure 1 can be a diamond lattice arrangement or a triangular lattice arrangement. Similar to FIG. 1A, the roughened structure 1 shown in FIG. 1B also includes a plurality of grooves 16, 18, and the grooves 16, 18 parallel to each other have the same depth and width, respectively. The difference from the first embodiment is that the grooves 16, 18 are arranged in a rhombic lattice arrangement, that is, the angle between the two grooves 16, 18 is not a right angle but an acute or obtuse angle. Similarly, the roughened structure 1 in FIG. 1C is similar to the structure shown in FIG. 1A, however the roughened structure 1 of the third embodiment additionally includes a recess 20 such that the grooves 16, 18, 20 are presented. The layout of the triangular lattices has a third spacing c between the grooves 20 adjacent to each other in parallel. Depending on the requirements of the different products, the values of the third spacing c may be the same or different from the values of the first spacing a and/or the second spacing b. Other technical features of the first to third embodiments are substantially the same except for the main differences described above, and will not be described again for the sake of brevity. It should be particularly noted here that in the above first to third embodiments, the light receiving surface 12 in the grooves 16, 18, 20 and/or between the grooves 16, 18, 20 may additionally have a microstructure. The features of this microstructure will be detailed below.

以下配合圖式詳細說明本發明太陽能電池結構之表面粗糙化方法。雖然本發明以實施例揭露如下,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準,且為了不致使本發明之精神晦澀難懂,部分習知製程步驟的細節將不在此揭露。The surface roughening method of the solar cell structure of the present invention will be described in detail below with reference to the drawings. The present invention is not limited to the scope of the invention, and may be modified and retouched without departing from the spirit and scope of the invention. The details of some of the conventional process steps will not be disclosed herein, as defined by the scope of the appended claims.

如第2A圖及第2B圖所示,第2A圖根據本發明之一實施例所繪示的利用線鋸在受光面形成複數個粗糙化結構的示意圖,而第2B圖所繪示的是第2A圖的局部放大示意圖。如第2A圖及第2B圖所示,在製程初始階段,提供至少一基底10,基底10可為單晶矽晶圓、多晶矽晶圓或其他習知的半導體基底。接著,將基底10置入或接觸一線鋸機台30,使基底10之至少一受光面12直接接觸於一線鋸列(wire web)36。其中,線鋸列36係由複數條彼此平行之線鋸34所構成,且線鋸34可藉由驅動滾輪32的轉動而沿著線鋸34之長軸方向移動,例如一第一方向X。之後,線鋸列36會沿著線鋸34之長軸方向往復或單向移動,使得受光面12在線鋸列36之持續壓抵下而受到一第三方向Z之作用力。繼以,請參照第2B圖,圖式中繪示出線鋸34之局部放大圖。可以看出線鋸表面34a具有複數個研磨粒34b,其可以是鑽石、類鑽石或碳化矽等硬度大於基底10之材質,而隨著粗糙化製程的進行,研磨粒34b會持續地研磨與其接觸的受光面12,直至形成第一凹槽38。各第一凹槽38係同時形成且彼此互相平行,其開口寬度實質上對應於線鋸34之直徑,亦即,較粗之線鋸34可得到較大開口寬度之第一凹槽38,此特徵將於下文詳述之。在此需注意的是,上述之線鋸34也可以被替代成不具有研磨粒34b之金屬線。此外,上述之線鋸機台30不一定是用以切割矽鑄錠(ingot)之機台,其也可以被均等地替代為任何具有線鋸列36之裝置。2A and 2B, FIG. 2A is a schematic diagram of forming a plurality of roughened structures on a light receiving surface by using a wire saw according to an embodiment of the present invention, and FIG. 2B is a diagram A partial enlarged view of the 2A diagram. As shown in FIGS. 2A and 2B, at least one substrate 10 is provided at an initial stage of the process, and the substrate 10 may be a single crystal germanium wafer, a polycrystalline silicon wafer, or other conventional semiconductor substrate. Next, the substrate 10 is placed in or in contact with a wire saw table 30 such that at least one light receiving surface 12 of the substrate 10 is in direct contact with a wire web 36. The wire saw row 36 is composed of a plurality of wire saws 34 that are parallel to each other, and the wire saw 34 can be moved along the long axis direction of the wire saw 34 by the rotation of the drive roller 32, for example, a first direction X. Thereafter, the wire saw row 36 is reciprocated or unidirectionally moved along the long axis direction of the wire saw 34 such that the light receiving surface 12 is pressed against the wire saw 36 and subjected to a third direction Z. Subsequently, please refer to FIG. 2B, in which a partial enlarged view of the wire saw 34 is illustrated. It can be seen that the wire saw surface 34a has a plurality of abrasive grains 34b, which may be diamond, diamond-like or tantalum carbide, etc., having a hardness greater than that of the substrate 10, and as the roughening process proceeds, the abrasive particles 34b are continuously ground and contacted. The light receiving surface 12 is formed until the first groove 38 is formed. Each of the first grooves 38 are simultaneously formed and parallel to each other, and the opening width substantially corresponds to the diameter of the wire saw 34, that is, the thicker wire saw 34 can obtain the first groove 38 having a larger opening width. Features will be detailed below. It should be noted here that the wire saw 34 described above can also be replaced with a wire without the abrasive particles 34b. Further, the wire sawing machine 30 described above is not necessarily a machine for cutting a singe ingot, and it may be equally replaced with any device having a wire saw row 36.

請接著參照第3A圖及第3B圖,第3A圖所繪示的是具有粗糙化結構的基底示意圖,第3B圖是沿著第3A圖之切線I-I所繪示的粗糙化結構剖面示意圖。如第3A圖及第3B圖所示,在經過上述之粗糙化製程後,此時基底10之受光面12會具有複數條沿著第一方向X延伸之第一凹槽38。相鄰之第一凹槽38間具有一間距s,且各個第一凹槽38係具有相同之第一深度D及第一寬度w。此外,由於研磨粒34b具有特定之粗糙度,在粗糙化製程中會同時使得各第一凹槽38內之表面具有一微結構42。Referring to FIGS. 3A and 3B, FIG. 3A is a schematic diagram of a substrate having a roughened structure, and FIG. 3B is a schematic cross-sectional view of the roughened structure taken along a line I-I of FIG. 3A. As shown in FIGS. 3A and 3B, after the above-described roughening process, the light receiving surface 12 of the substrate 10 has a plurality of first grooves 38 extending along the first direction X. The adjacent first grooves 38 have a spacing s therebetween, and each of the first grooves 38 has the same first depth D and first width w. In addition, since the abrasive particles 34b have a specific roughness, the surface within each of the first grooves 38 has a microstructure 42 at the same time in the roughening process.

接著,參照第4圖,第4圖是根據本發明一實施例所繪示之粗糙化結構剖面示意圖。第4圖之結構類似第3B圖之結構,然而其接續第3B圖之製程,進一步地另施行一常規粗糙化製程,使得各第一凹槽3內8之表面形成第一微結構44,同時於第一凹槽38之間之受光面12形成第二微結構46。較佳者,第一微結構44之粗糙度會大於第二微結構46之粗糙度,但不限於此。此時,相鄰之第一凹槽38間具有一間距s,且各個第一凹槽38係具有相同之第二深度D’及第二寬度w’,且較佳者,第二深度D’及第二寬度w’會略大於進行常規粗糙化製程之前的第一深度D及第一寬度w,但不限於此。此外,根據其他實施例,可以先進行常規粗糙化製程再接著進行線鋸粗糙化製程,亦即,本發明可組合搭配其他常規粗糙化製程。在此需注意的是,上述之常規粗糙化製程包含有濕式蝕刻、電漿蝕刻或熱處理等類似製程,但不限於此。因此,透過上述之第一微結構44及第二微結構46,可以更進一步增加受光面12之表面積並降低其反射率,進而提升太陽能電池之短路電流(Isc)。4 is a cross-sectional view showing a roughened structure according to an embodiment of the invention. The structure of FIG. 4 is similar to the structure of FIG. 3B. However, following the process of FIG. 3B, a conventional roughening process is further performed, so that the surface of the inner surface 8 of each of the first grooves 3 forms the first microstructure 44, and at the same time The light receiving surface 12 between the first grooves 38 forms a second microstructure 46. Preferably, the roughness of the first microstructure 44 is greater than the roughness of the second microstructure 46, but is not limited thereto. At this time, the adjacent first grooves 38 have a spacing s, and each of the first grooves 38 has the same second depth D' and second width w', and preferably, the second depth D' And the second width w' may be slightly larger than the first depth D and the first width w before the conventional roughening process, but is not limited thereto. In addition, according to other embodiments, the conventional roughening process may be performed followed by the wire saw roughening process, that is, the present invention may be combined with other conventional roughening processes. It should be noted here that the conventional roughening process described above includes a wet etching, a plasma etching or a heat treatment, and the like, but is not limited thereto. Therefore, the first microstructure 44 and the second microstructure 46 can further increase the surface area of the light receiving surface 12 and reduce the reflectance thereof, thereby improving the short circuit current (I sc ) of the solar cell.

至此,已完成本發明之一實施例的粗糙化結構。本發明主要係透過物理性的研磨方式於基底10之受光面12上形成複數條彼此平行之第一凹槽38。比起一般濕式粗糙化製程,此物理性之研磨方式可避免時間成本之耗費,並具有較佳之製程穩定性。此外,由於本發明利用線鋸機台30之線鋸列36進行粗糙化製程,因此,可藉由調整線鋸直徑、研磨粒粗糙度、研磨粒硬度、線鋸列間距及線鋸下壓力道,以定義出所需之凹槽間距、深度、寬度及微結構粗糙度。So far, the roughened structure of one embodiment of the present invention has been completed. The present invention mainly forms a plurality of first grooves 38 parallel to each other on the light receiving surface 12 of the substrate 10 by physical polishing. Compared with the general wet roughening process, this physical grinding method can avoid the cost of time and has better process stability. In addition, since the present invention utilizes the wire saw row 36 of the wire saw machine table 30 for the roughening process, the wire saw diameter, the abrasive grain roughness, the abrasive grain hardness, the wire saw column pitch, and the wire saw lower pressure path can be adjusted. To define the required groove pitch, depth, width and microstructure roughness.

除上述實施例之外,本發明更可以整合兩個以上不同材質的基板,在相同線鋸機台30下進行粗糙化程序,亦可以更進一步地進行一連續式的粗糙化製程。其步驟敘述如下,並搭配參照類似之第2A圖至第4圖。首先,類似第2A圖,提供一第一基底及一第二基底,其中,第一基底類似上述實施例所述之基底10,且第二基底之組成不同於第一基底。接著,線鋸列36會持續壓抵住第一基底及一第二基底之受光面12,且線鋸列36會沿著線鋸34之長軸方向(第一方向X)往復或單向移動,使得受光面12受到一第三方向Z之作用力,直至第一基底及一第二基底之受光面12同時形成複數個第一凹槽38。類似如第3A圖,第一凹槽38係彼此互相平行且其沿著第一方向X延伸。相鄰之第一凹槽38間具有一間距s,且各個第一凹槽38係具有相同之第一深度D及第一寬度w。後續之步驟類似如前述之實施例,在此便不再贅述。In addition to the above embodiments, the present invention can further integrate two or more substrates of different materials, perform roughening procedures under the same wire sawing machine 30, and can further perform a continuous roughening process. The steps are described below, with reference to similar FIGS. 2A to 4. First, similar to FIG. 2A, a first substrate and a second substrate are provided, wherein the first substrate is similar to the substrate 10 described in the above embodiment, and the composition of the second substrate is different from that of the first substrate. Then, the wire saw row 36 is continuously pressed against the light receiving surface 12 of the first substrate and the second substrate, and the wire saw row 36 is reciprocated or unidirectionally moved along the long axis direction (the first direction X) of the wire saw 34. The light receiving surface 12 is subjected to a force in a third direction Z until the first substrate and the light receiving surface 12 of the second substrate simultaneously form a plurality of first grooves 38. Like FIG. 3A, the first grooves 38 are parallel to each other and extend along the first direction X. The adjacent first grooves 38 have a spacing s therebetween, and each of the first grooves 38 has the same first depth D and first width w. The subsequent steps are similar to the embodiments as described above, and will not be described again here.

參照第5A圖,第5A圖是根據本發明另一實施例所繪示之具有矩形格狀排列之表面粗糙化結構示意圖。如第5A圖並搭配第1A圖所示,可選擇性地利用相同或不同的鋸線列進行另一粗糙化製程,而在基底10之受光面12上形成複數個沿著第二方向Y延伸之第二凹槽40。各第二凹槽40之間距s’、深度、寬度及微結構粗糙度皆相同,且同樣受到鋸線列的影響。此外,第二凹槽40與第一凹槽38之間距s’、s、深度、寬度及微結構粗糙度可相同或不相同,端看粗糙化製程之鋸線列及製程參數之選擇。在此需注意的是,在第5A圖中第一凹槽38及第二凹槽40之排列佈局可替換如第1B圖及第1C圖所示之排列佈局,因其為簡易之均等變換,在此便不再贅述。繼以進行一常規氣相擴散製程,而於基底10之上部形成一摻雜區48及一PN接面49。最後,參照第5B圖,第5B圖所繪示的是具有指狀電極及匯流電極後之太陽能電池俯視圖。接續第5A圖,在形成第一凹槽38及第二凹槽40之後,於基底10之受光面12形成至少一指狀電極54及一匯流電極52,至此,便完成一太陽能電池50。Referring to FIG. 5A, FIG. 5A is a schematic diagram of a surface roughening structure having a rectangular lattice arrangement according to another embodiment of the present invention. As shown in FIG. 5A and in conjunction with FIG. 1A, another roughening process may be selectively performed using the same or different sawing rows, and a plurality of Y-shaped extending along the second direction Y are formed on the light-receiving surface 12 of the substrate 10. The second groove 40. The distance between the second grooves 40 is the same as the s', depth, width and microstructure roughness, and is also affected by the saw line. In addition, the distance between the second groove 40 and the first groove 38 may be the same or different from the s', s, depth, width and microstructure roughness, and the selection of the saw wire row and the process parameters of the roughening process are selected. It should be noted that the arrangement of the first groove 38 and the second groove 40 in FIG. 5A can replace the arrangement layout as shown in FIG. 1B and FIG. 1C, because it is a simple equal transformation. I won't go into details here. A conventional gas phase diffusion process is followed by forming a doped region 48 and a PN junction 49 over the substrate 10. Finally, referring to FIG. 5B, FIG. 5B is a plan view of a solar cell having a finger electrode and a bus electrode. Following the formation of the first recess 38 and the second recess 40, at least one finger electrode 54 and one bus electrode 52 are formed on the light receiving surface 12 of the substrate 10, and a solar cell 50 is completed.

綜合上述,本發明提供一種太陽能電池結構及其表面粗糙化方法。藉由本發明之粗糙化製程,可避免時間成本之耗費、提供較佳之製程穩定性以及節省廠房空間。除此之外,由於本發明係利用線鋸機台之線鋸列進行粗糙化,因此可藉由調整線鋸直徑、研磨粒粗糙度、研磨粒硬度、線鋸列分佈線寬及線鋸下壓力道,以定義出所需之凹槽間距、深度、寬度及微結構粗糙度,大幅增進粗糙化製程之彈性。In summary, the present invention provides a solar cell structure and a surface roughening method thereof. By the roughening process of the present invention, time cost can be avoided, better process stability can be provided, and plant space can be saved. In addition, since the present invention utilizes a wire saw row of a wire saw machine for roughening, it is possible to adjust the wire saw diameter, the abrasive grain roughness, the abrasive grain hardness, the wire saw column distribution line width, and the wire saw. The pressure channel defines the desired groove pitch, depth, width and microstructure roughness to greatly enhance the flexibility of the roughening process.

以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

1...粗糙化結構1. . . Roughened structure

10...基底10. . . Base

12...受光面12. . . Light receiving surface

16、18、20...凹槽16, 18, 20. . . Groove

30...線鋸機台30. . . Wire saw machine

32...驅動滾輪32. . . Drive wheel

34...線鋸34. . . Wire saw

34a...線鋸表面34a. . . Wire saw surface

34b...研磨粒34b. . . Abrasive grain

36...線鋸列36. . . Wire saw column

38...第一凹槽38. . . First groove

40...第二凹槽40. . . Second groove

42...微結構42. . . microstructure

44...第一微結構44. . . First microstructure

46...第二微結構46. . . Second microstructure

48...摻雜區48. . . Doped region

49...PN接面49. . . PN junction

50...太陽能電池50. . . Solar battery

52...匯流電極52. . . Bus electrode

54...指狀電極54. . . Finger electrode

a...第一間距a. . . First spacing

b...第二間距b. . . Second spacing

c...第三間距c. . . Third spacing

s、s’...間距s, s’. . . spacing

D...第一深度D. . . First depth

D’...第二深度D’. . . Second depth

w...第一寬度w. . . First width

w’...第二寬度w’. . . Second width

X...第一方向X. . . First direction

Y...第二方向Y. . . Second direction

Z...第三方向Z. . . Third direction

I-I’...切線I-I’. . . Tangent

第1A圖至第1C圖是根據本發明不同實施例所繪示之一種太陽能電池表面粗糙化結構之俯視圖。1A to 1C are top views of a surface roughening structure of a solar cell according to various embodiments of the present invention.

第2A圖至第5B圖是根據本發明不同實施例所繪示之一種太陽能電池之製作方法示意圖,其中:2A-5B are schematic views showing a method of fabricating a solar cell according to various embodiments of the present invention, wherein:

第2A圖所繪示的是利用線鋸在受光面形成複數個粗糙化結構的示意圖;FIG. 2A is a schematic view showing the formation of a plurality of roughened structures on the light receiving surface by using a wire saw;

第2B圖所繪示的是第2A圖的局部放大示意圖;2B is a partial enlarged view of FIG. 2A;

第3A圖所繪示的是具有粗糙化結構的基底示意圖;Figure 3A is a schematic view of a substrate having a roughened structure;

第3B圖是沿著第3A圖之切線I-I所繪示的粗糙化結構剖面示意圖;Figure 3B is a schematic cross-sectional view of the roughened structure taken along the line I-I of Figure 3A;

第4圖是根據本發明另一實施例所繪示之粗糙化結構剖面示意圖;4 is a schematic cross-sectional view showing a roughened structure according to another embodiment of the present invention;

第5A圖是根據本發明另一實施例所繪示之具有矩形格狀排列之表面粗糙化結構示意圖;以及5A is a schematic diagram of a surface roughening structure having a rectangular lattice arrangement according to another embodiment of the present invention;

第5B圖所繪示的是具有指狀電極及匯流電極之太陽能電池俯視圖。Fig. 5B is a plan view of a solar cell having a finger electrode and a bus electrode.

10...基底10. . . Base

12...受光面12. . . Light receiving surface

38...第一凹槽38. . . First groove

44...第一微結構44. . . First microstructure

46...第二微結構46. . . Second microstructure

D’...第二深度D’. . . Second depth

s...間距s. . . spacing

w’...第二寬度w’. . . Second width

Claims (18)

一種太陽能電池表面粗糙化的方法,包含有:提供一第一基底,具有至少一第一受光面;提供複數條彼此平行之線鋸,且該些線鋸係直接接觸該第一受光面;以及沿著該些線鋸之長軸方線移動該些線鋸,以於該第一受光面同時形成複數個第一凹槽。A method for roughening a surface of a solar cell, comprising: providing a first substrate having at least one first light receiving surface; providing a plurality of wire saws parallel to each other, and the wire saws directly contacting the first light receiving surface; The wire saws are moved along the long axis square lines of the wire saws to form a plurality of first grooves simultaneously on the first light receiving surface. 如申請專利範圍第1項所述之方法,其中在形成該些第一凹槽之後,另包含有:於該第一基底內形成一PN接面;以及於該第一基底之表面形成至少一指狀電極及一匯流電極。The method of claim 1, wherein after forming the first recesses, further comprising: forming a PN junction in the first substrate; and forming at least one surface on the surface of the first substrate Finger electrode and a bus electrode. 如申請專利範圍第1項所述之方法,其中該些線鋸會持續壓抵住該第一受光面直至形成該些第一凹槽。The method of claim 1, wherein the wire saws continue to press against the first light receiving surface until the first grooves are formed. 如申請專利範圍第1項所述之方法,其中在形成該些第一凹槽時,會同時形成複數個微結構於各該第一凹槽之表面。The method of claim 1, wherein a plurality of microstructures are simultaneously formed on the surface of each of the first grooves when the first grooves are formed. 如申請專利範圍第1項所述之方法,其中在形成該些第一凹槽之後另包含有:進行一粗糙化製程,其中該粗糙化製程包含有濕式蝕刻、電漿蝕刻或熱處理。The method of claim 1, wherein after forming the first recesses, further comprising: performing a roughening process, wherein the roughening process comprises wet etching, plasma etching or heat treatment. 如申請專利範圍第1項所述之方法,其中另包含提供一第二基底,其中該第二基底之組成不同於該第一基底,且該方法另包含有:於提供該些線鋸時,該些線鋸會同時直接接觸該第二基底之一第二受光面;以及於移動該些線鋸時,會同時形成複數個第二凹槽於該第二基底之該第二受光面。The method of claim 1, further comprising providing a second substrate, wherein the second substrate has a composition different from the first substrate, and the method further comprises: when providing the wire saws, The wire saws directly contact one of the second light receiving surfaces of the second substrate; and when the wire saws are moved, a plurality of second grooves are simultaneously formed on the second light receiving surface of the second substrate. 如申請專利範圍第1項所述之方法,其中該些互相平行排列之線鋸係構成一線鋸列。The method of claim 1, wherein the wire saws arranged in parallel with each other form a line saw. 如申請專利範圍第1項所述之方法,其中該些線鋸係沿著各該長軸方線進行往復移動或單向移動。The method of claim 1, wherein the wire saws are reciprocated or unidirectionally moved along each of the long axis lines. 如申請專利範圍第1項所述之方法,其中在提供該些線鋸前,另包含有形成複數個研磨粒於該些線鋸之表面。The method of claim 1, wherein before providing the wire saws, a plurality of abrasive grains are formed on the surface of the wire saws. 如申請專利範圍第1項所述之方法,其中各該第一凹槽係具有相同之深度及寬度。The method of claim 1, wherein each of the first grooves has the same depth and width. 一種太陽能電池之結構,包含有:一基底,具有至少一受光面;以及複數個凹槽,位於該受光面,其中該些凹槽具有格狀(grid)排列佈局,以構成一粗糙化結構。A solar cell structure comprising: a substrate having at least one light receiving surface; and a plurality of grooves on the light receiving surface, wherein the grooves have a grid arrangement layout to form a roughened structure. 如申請專利範圍第11項所述之結構,其中該格狀排列係為一矩形(rectangular)格狀排列。The structure of claim 11, wherein the lattice arrangement is a rectangular lattice arrangement. 如申請專利範圍第11項所述之結構,其中該格狀排列係為一菱形(diamond)格狀排列。The structure of claim 11, wherein the lattice arrangement is a diamond lattice arrangement. 如申請專利範圍第11項所述之結構,其中該格狀排列係為三角形(triangular)格狀排列。The structure of claim 11, wherein the lattice arrangement is a triangular lattice arrangement. 如申請專利範圍第11項所述之結構,其中各該凹槽之表面具有複數個第一微結構。The structure of claim 11, wherein the surface of each of the grooves has a plurality of first microstructures. 如申請專利範圍第15項所述之結構,其中位於各該凹槽之間之該受光面具有複數個第二微結構。The structure of claim 15, wherein the light receiving surface between each of the grooves has a plurality of second microstructures. 如申請專利範圍第11項所述之結構,其中彼此平行之各該凹槽具有相同之深度及寬度。The structure of claim 11, wherein each of the grooves parallel to each other has the same depth and width. 如申請專利範圍第11項所述之結構,其中該些彼此平行之兩相鄰凹槽間具有一間距,且各該間距彼此相同。The structure of claim 11, wherein the two adjacent grooves that are parallel to each other have a spacing therebetween, and each of the spacings is identical to each other.
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CN101132896A (en) * 2005-05-11 2008-02-27 三菱电机株式会社 Silicon block and method for manufacturing silicon wafer
US20090283145A1 (en) * 2008-05-13 2009-11-19 Kim Yun-Gi Semiconductor Solar Cells Having Front Surface Electrodes
KR101010286B1 (en) * 2008-08-29 2011-01-24 엘지전자 주식회사 Manufacturing method of solar cell
US20110088765A1 (en) * 2009-10-16 2011-04-21 Kuang-Chieh Lai Solar Cell Structure
TWM426876U (en) * 2011-11-07 2012-04-11 Motech Ind Inc Solar cell

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