TW201346267A - Probe apparatus and parallelism adjustment mechanism of a probe card - Google Patents
Probe apparatus and parallelism adjustment mechanism of a probe card Download PDFInfo
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- TW201346267A TW201346267A TW102105832A TW102105832A TW201346267A TW 201346267 A TW201346267 A TW 201346267A TW 102105832 A TW102105832 A TW 102105832A TW 102105832 A TW102105832 A TW 102105832A TW 201346267 A TW201346267 A TW 201346267A
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- 230000007246 mechanism Effects 0.000 title claims abstract description 115
- 239000000523 sample Substances 0.000 title claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000003028 elevating effect Effects 0.000 claims description 22
- 238000007689 inspection Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 23
- 230000009467 reduction Effects 0.000 abstract description 2
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
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- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
Description
本發明是有關探針裝置及探針卡的平行調整機構。 The present invention relates to a parallel adjustment mechanism for a probe device and a probe card.
以往,在半導體裝置的製造工程中有使用探針裝置,該探針裝置是使配設於探針卡的多數個探針接觸於半導體晶圓所形成的半導體裝置,而進行電性的特性檢查。並且,在如此的探針裝置中是構成使多數個探針同時一起接觸於半導體晶圓上所形成的全部半導體裝置進行檢查。 Conventionally, in the manufacturing process of a semiconductor device, a probe device is used which performs electrical property inspection by bringing a plurality of probes disposed on a probe card into contact with a semiconductor device formed by a semiconductor wafer. . Further, in such a probe device, all of the semiconductor devices formed by simultaneously contacting a plurality of probes on a semiconductor wafer are inspected.
上述探針裝置是需要使多數的探針以均一的針壓來接觸於半導體晶圓所形的半導體裝置。因此,有需要精度佳地保持探針卡與半導體晶圓的平行度,藉由配設在複數處的驅動機構來使固定有探針卡的頂板昇降,具備調整探針卡與半導體晶圓的平行度的平行調整機構者為人所知(例如參照專利文獻1)。 The probe device is a semiconductor device in which a plurality of probes are required to contact a semiconductor wafer with a uniform pin pressure. Therefore, it is necessary to accurately maintain the parallelism between the probe card and the semiconductor wafer, and the top plate to which the probe card is fixed is lifted and lowered by a driving mechanism disposed at a plurality of places, and the probe card and the semiconductor wafer are adjusted. The parallel adjustment mechanism of the parallelism is known (for example, refer to Patent Document 1).
[先行技術文獻] [Advanced technical literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本特開2006-317302號公報 [Patent Document 1] JP-A-2006-317302
在探針裝置中,使載置於載置台上的半導體晶圓上昇而接觸於探針卡的探針時,例如有由下側往上側施加100kgf以上的接觸荷重來使半導體晶圓接觸於探針的情況。另一方面,如上述般,藉由驅動機構來使頂板昇降的構成時,相較於不經由驅動機構來直接機械性地固定頂板時,存在驅動機構的部分其剛性會降低。因此,使載置台上昇而由下側往上側施加接觸荷重時的變位量會變多,且此變位量形成不均一,因此會有探針卡與半導體晶圓的平行度降低的問題。 In the probe device, when the semiconductor wafer placed on the mounting table is raised to contact the probe of the probe card, for example, a contact load of 100 kgf or more is applied from the lower side to the upper side to contact the semiconductor wafer. The condition of the needle. On the other hand, as described above, when the top plate is lifted and lowered by the drive mechanism, the rigidity of the portion where the drive mechanism is present is lowered as compared with the case where the top plate is directly mechanically fixed without the drive mechanism. Therefore, when the mounting table is raised and the contact load is applied from the lower side to the upper side, the amount of displacement increases, and the amount of displacement is uneven, so that the parallelism between the probe card and the semiconductor wafer is lowered.
本發明是在於應付上述以往的情事者,以能夠提供一種可抑制用以調整探針卡的平行度之驅動機構的部分的剛性的降低,可精度佳地維持探針卡與半導體晶圓的平行度之探針裝置及探針卡的平行調整機構為目的。 The present invention is directed to the above-described conventional circumstances, and is capable of providing a reduction in rigidity of a portion of a drive mechanism for suppressing the parallelism of a probe card, and maintaining the probe card in parallel with the semiconductor wafer with high precision. The purpose of the probe device and the parallel adjustment mechanism of the probe card.
本發明的探針裝置的一形態係使配設於探針卡的複數個探針接觸於被檢查基板進行電性的檢查之探針裝置,其特徵係具備:載置台,其係載置前述被檢查基板;頂板,其係於前述載置台的上方保持前述探針卡; 4個支撐柱,其係於四角落支撐前述頂板;昇降機構,其係配設在前述支撐柱之中的至少3處,使前述頂板昇降,調整前述探針卡與前述載置台上的前述被檢查基板的平行度;及可解除的制動機構,其係配設在前述昇降機構的配置部位之中至少1處,對前述頂板的昇降施以制動。 In one aspect of the probe device of the present invention, a probe device that is in contact with a plurality of probes disposed on a probe card and inspects the substrate to be inspected for electrical inspection is characterized in that the mounting device includes a mounting table on which the aforementioned a substrate to be inspected; a top plate that holds the probe card above the mounting table; 4 support columns, which support the top plate at four corners; and a lifting mechanism disposed at at least three of the support columns to raise and lower the top plate, and adjust the probe card and the aforementioned one on the mounting table The parallelism of the substrate is checked; and the detachable brake mechanism is disposed at least at one of the arrangement positions of the lift mechanism, and brakes the lift of the top plate.
本發明的探針卡的平行調整機構的一形態係具有介於在四角落支撐安裝有探針卡的頂板的4個支撐柱之中的至少3個支撐柱與前述頂板之間的昇降機構,調整前述探針卡與配置於其下方的載置台上的被檢查基板的平行度之探針卡的平行調整機構,其特徵係具備:配設在前述昇降機構的配置部位之中至少1處,對前述頂板的昇降施以制動之可解除的制動機構。 One aspect of the parallel adjustment mechanism of the probe card of the present invention has a lifting mechanism between at least three of the four support columns supporting the top plate of the probe card at four corners and the top plate. a parallel adjustment mechanism for adjusting a probe card having a parallelism between the probe card and a substrate to be inspected on a mounting table disposed thereon, wherein the method includes: disposing at least one of the arrangement positions of the elevating mechanism; A brake mechanism capable of releasing the brake is applied to the lifting of the top plate.
若根據本發明,則可提供一種可抑制用以調整探針卡的平行度之驅動機構的部分的剛性的降低,可精度佳地維持探針卡與半導體晶圓的平行度之探針裝置及探針卡的平行調整機構。 According to the present invention, it is possible to provide a probe device capable of suppressing a decrease in rigidity of a portion of a drive mechanism for adjusting a parallelism of a probe card, and maintaining the parallelism between the probe card and the semiconductor wafer with high precision Parallel adjustment mechanism of the probe card.
10‧‧‧探針裝置 10‧‧‧ probe device
11‧‧‧晶圓吸盤(載置台) 11‧‧‧ wafer suction cup (mounting table)
12‧‧‧探針卡 12‧‧‧ Probe Card
12A‧‧‧探針 12A‧‧‧Probe
14‧‧‧卡夾緊機構 14‧‧‧Card clamping mechanism
15‧‧‧頂板 15‧‧‧ top board
16‧‧‧支撐柱 16‧‧‧Support column
17‧‧‧昇降機構 17‧‧‧ Lifting mechanism
17B‧‧‧基體 17B‧‧‧ substrate
17C‧‧‧移動體 17C‧‧‧Mobile
17D‧‧‧鎖緊構件 17D‧‧‧Locking members
17E‧‧‧昇降體 17E‧‧‧ Lifting body
17F‧‧‧驅動機構 17F‧‧‧ drive mechanism
17G‧‧‧滾珠螺桿 17G‧‧·ball screw
17H‧‧‧馬達 17H‧‧‧Motor
17I‧‧‧第1移動引導機構 17I‧‧‧1st mobile guiding mechanism
17J‧‧‧第2移動引導機構 17J‧‧‧2nd mobile guiding mechanism
17K‧‧‧昇降引導機構 17K‧‧‧ Lifting guide mechanism
17L‧‧‧線性滑軌 17L‧‧‧linear slide
17M‧‧‧卡合體 17M‧‧‧卡合体
17N‧‧‧帽簷狀部 17N‧‧‧Hat
20‧‧‧制動機構 20‧‧‧ brake mechanism
21‧‧‧固定用治具 21‧‧‧Fixed Fixtures
22‧‧‧軸 22‧‧‧Axis
23‧‧‧把持機構 23‧‧‧Control organization
24‧‧‧基座 24‧‧‧Base
25‧‧‧電磁閥 25‧‧‧ solenoid valve
30‧‧‧框體 30‧‧‧ frame
31‧‧‧制動金屬 31‧‧‧ brake metal
31A‧‧‧圓形的空隙 31A‧‧‧Circular void
31B‧‧‧開放部 31B‧‧ Open Department
32‧‧‧活塞 32‧‧‧Piston
33‧‧‧插入部 33‧‧‧Insert Department
34‧‧‧制動開放埠 34‧‧‧Brake open埠
W‧‧‧半導體晶圓 W‧‧‧Semiconductor Wafer
圖1是表示本發明之一實施形態的探針裝置的要部構成圖。 Fig. 1 is a view showing the configuration of a main part of a probe device according to an embodiment of the present invention.
圖2是表示圖1的探針裝置的上面構成圖。 Fig. 2 is a top plan view showing the probe device of Fig. 1;
圖3是表示圖1的探針裝置的昇降機構的構成圖。 Fig. 3 is a view showing the configuration of a lifting mechanism of the probe device of Fig. 1;
圖4是表示圖1的探針裝置的制動機構的配置部分的構成圖。 Fig. 4 is a configuration diagram showing an arrangement portion of a brake mechanism of the probe device of Fig. 1;
圖5是表示圖1的探針裝置的制動機構的配置部分的構成圖。 Fig. 5 is a configuration diagram showing an arrangement portion of a brake mechanism of the probe device of Fig. 1;
圖6是表示圖1的探針裝置的制動機構的構成圖。 Fig. 6 is a configuration diagram showing a brake mechanism of the probe device of Fig. 1;
圖7是表示圖1的探針裝置的制動機構的構成圖。 Fig. 7 is a configuration diagram showing a brake mechanism of the probe device of Fig. 1;
圖8是表示圖1的探針裝置的動作的流程圖。 Fig. 8 is a flow chart showing the operation of the probe device of Fig. 1;
圖9是用以說明距離的測定點的圖。 Fig. 9 is a view for explaining measurement points of a distance.
以下,參照圖面來說明本發明的實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
如圖1及圖2所示般,本實施形態的探針裝置10是具備可移動的載置台(晶圓吸盤)11,該載置台11是載置作為被檢查基板的半導體晶圓W,且在晶圓吸盤11的上方配置有探針卡12,該探針卡12是配設有多數的探針12A。此探針卡12是藉由固定在頂板15的下面之卡夾緊機構14來經由卡夾具13而固定。頂板15是板狀地一體構成,具備高的剛性。 As shown in FIG. 1 and FIG. 2, the probe device 10 of the present embodiment includes a movable mounting table (wafer chuck) 11 on which a semiconductor wafer W as a substrate to be inspected is placed, and A probe card 12 is disposed above the wafer chuck 11, and the probe card 12 is provided with a plurality of probes 12A. The probe card 12 is fixed via the card holder 13 by a card clamping mechanism 14 fixed to the lower surface of the top plate 15. The top plate 15 is integrally formed in a plate shape and has high rigidity.
頂板15是在其四角落藉由支撐柱16來支撐,該等的支撐柱16之與頂板15的連接部位之中,至少3處配設有昇降機構17。就本實施形態而言,昇降機構17是配設在頂板15的四角落之中,前方2處(圖2中左 側)及後方1處(圖2中右側的上側)合計3處。在剩下的後方1處,頂板15是被支撐柱16以一定的高度來可傾斜地支撐。另外,昇降機構17是亦可配設在所有支撐柱16之與頂板15的連接部位,亦即4處。 The top plate 15 is supported at its four corners by a support column 16, and at least three of the connection portions of the support columns 16 and the top plate 15 are provided with a lifting mechanism 17. In the present embodiment, the elevating mechanism 17 is disposed in the four corners of the top plate 15, and the front two places (left in FIG. 2) The side (the side) and the rear one (the upper side of the right side in Fig. 2) have a total of three places. At the remaining rear side 1, the top plate 15 is supported obliquely by the support column 16 at a certain height. Further, the elevating mechanism 17 may be disposed at a joint portion of all the support columns 16 with the top plate 15, that is, four places.
並且,如圖2、圖4、圖5等所示般,配設有上述3個昇降機構17的部位之中,至少1處配設有用以對頂板15的昇降施以制動之可解除的制動機構20。就本實施形態而言,是在後方側所配設的昇降機構17的部位配設有制動機構20。 Further, as shown in FIG. 2, FIG. 4, FIG. 5 and the like, at least one of the portions where the three elevating mechanisms 17 are disposed is provided with a brake for releasing the brake for lifting and lowering the top plate 15. Agency 20. In the present embodiment, the brake mechanism 20 is disposed at a portion of the elevating mechanism 17 disposed on the rear side.
如圖1所示般,探針卡12是經由連接環R來連接至未圖示的測試器的測試頭,經由探針卡12來從測試器供給檢查用的訊號至半導體晶圓W上所形成的半導體裝置,用測試器測定來自半導體裝置的輸出訊號,而構成可進行半導體裝置的電性特性的檢查。 As shown in FIG. 1, the probe card 12 is connected to a test head of a tester (not shown) via a connection ring R, and the test signal is supplied from the tester to the semiconductor wafer W via the probe card 12. The formed semiconductor device is configured to measure an output signal from the semiconductor device by a tester, and constitutes an inspection capable of performing electrical characteristics of the semiconductor device.
在本實施形態中,平行調整機構是藉由頂板15的四角落之中的3處支撐柱16之間所分別存在的3個昇降機構17及1個制動機構20所構成,利用該等的昇降機構17及制動機構20來調整探針卡12與晶圓吸盤11上的晶圓W的平行度。此時,探針卡12與晶圓W的平行度是利用電容感測器或雷射測長器等的測定機器來測定。 In the present embodiment, the parallel adjustment mechanism is constituted by three elevating mechanisms 17 and one brake mechanism 20 which are respectively present between the three support columns 16 among the four corners of the top plate 15, and the lift is used. The mechanism 17 and the brake mechanism 20 adjust the parallelism of the probe card 12 and the wafer W on the wafer chuck 11. At this time, the parallelism between the probe card 12 and the wafer W is measured by a measuring device such as a capacitive sensor or a laser length measuring device.
如圖3所示般,昇降機構17皆全體形成大致矩形狀的塊狀,各昇降機構17是在各個的下面被固定於支撐柱16的上面,且在各個的上面分別被連結至頂板15。 As shown in FIG. 3, the elevating mechanism 17 is formed in a substantially rectangular block shape as a whole, and each of the elevating mechanisms 17 is fixed to the upper surface of the support column 16 on each of the lower surfaces, and is connected to the top plate 15 on each of the upper surfaces.
如圖3(a)所示般,昇降機構17是具有:基體17B,其係被固定於支撐柱16(圖1參照。)的上面;移動體17C,其係具有配置成可沿著基體17B上面移動的傾斜面;昇降體17E,其係藉由鎖緊構件17D(參照圖2)來連結於頂板15,且具有配置成可沿著移動體17C的傾斜面昇降的傾斜面;及驅動機構17F,其係使移動體17C沿著支撐柱16的上面移動。 As shown in Fig. 3(a), the elevating mechanism 17 has a base body 17B that is fixed to the upper side of the support column 16 (refer to Fig. 1), and a moving body 17C that is disposed to be along the base body 17B. An inclined surface that moves upward; an elevating body 17E that is coupled to the top plate 15 by a locking member 17D (refer to FIG. 2) and has an inclined surface that is configured to be movable up and down along the inclined surface of the moving body 17C; and a driving mechanism 17F, which moves the moving body 17C along the upper surface of the support column 16.
然後,驅動機構17F會在控制裝置的控制下驅動,使移動體17C往前後方向(在圖3(a)是左右方向)僅移動所定的尺寸,藉此構成昇降體17E會經由移動體17C的傾斜面來僅昇降所定的尺寸。控制裝置是根據測定機器的測定結果來控制驅動機構17F。 Then, the drive mechanism 17F is driven under the control of the control device, and the moving body 17C is moved by only a predetermined size in the front-rear direction (the horizontal direction in FIG. 3(a)), whereby the elevating body 17E is configured to pass through the moving body 17C. Incline the surface to lift only the specified size. The control device controls the drive mechanism 17F based on the measurement result of the measuring device.
移動體17C及昇降體17E皆是側面形狀為大致梯形形狀,構成為各個的傾斜面會彼此卡合而收納於支撐柱16上的矩形狀的塊體。而且,各彼此對向的前後左右的平行面會與支撐柱16的側面實質上一致,上下的兩面會被固定於支撐柱16的上面及頂板15的下面。位於檢查裝置10的後方(在圖1是右側)的昇降體17E是具有上端部會朝檢查裝置10的正面側(在圖1是左側)延伸而成為帽簷狀的帽簷狀部17N。 Each of the movable body 17C and the elevating body 17E has a substantially trapezoidal shape in a side surface shape, and is configured as a rectangular block in which the inclined surfaces are engaged with each other and housed on the support post 16. Further, the front, rear, left, and right parallel faces that face each other substantially coincide with the side faces of the support post 16, and the upper and lower faces are fixed to the upper surface of the support post 16 and the lower surface of the top plate 15. The elevating body 17E located at the rear of the inspection device 10 (on the right side in FIG. 1) has a brim-like portion 17N having an upper end portion extending toward the front side (the left side in FIG. 1) of the inspection device 10 to have a hat-like shape.
如圖3(a)所示般,使移動體17C移動的驅動 機構17F是具有:與形成於移動體17C的前後方向的雌螺絲螺合的滾珠螺桿17G、及驅動滾珠螺桿17G的馬達17H,使移動體17C沿著基體17B的上面往前後方向移動。在基體17B與移動體17C之間設有第1移動引導機構17I,移動體17C可經由此第1移動引導機構17I在基體17B上往前後方向順暢地移動。 As shown in Fig. 3 (a), the drive for moving the moving body 17C The mechanism 17F has a ball screw 17G that is screwed with a female screw formed in the front-rear direction of the movable body 17C, and a motor 17H that drives the ball screw 17G, and moves the movable body 17C in the front-rear direction along the upper surface of the base 17B. A first movement guide mechanism 17I is provided between the base body 17B and the movable body 17C, and the movable body 17C can smoothly move in the front-rear direction on the base body 17B via the first movement guide mechanism 17I.
並且,在移動體17C的傾斜面與昇降體17E的傾斜面之間設有第2移動引導機構17J,昇降體17E可經由此第2移動引導機構17J沿著移動體17C的傾斜面往前後方向移動而順暢地昇降。該等的第1、第2移動引導機構17I、17J是如圖3(b)所示般,皆至少具有二列的交叉滾柱軸承,可沿著各個的線性滑軌來移動。藉此,耐荷重性佳,即使在高荷重下,照樣可順暢地移動引導。 Further, a second movement guide mechanism 17J is provided between the inclined surface of the moving body 17C and the inclined surface of the elevating body 17E, and the elevating body 17E can be moved forward and backward along the inclined surface of the moving body 17C via the second movement guiding mechanism 17J. Move and move smoothly. As shown in Fig. 3(b), the first and second movement guiding mechanisms 17I and 17J each have at least two rows of crossed roller bearings, and are movable along the respective linear slide rails. Thereby, the load resistance is good, and even under a high load, the guide can be smoothly moved.
在基體17B中,昇降引導昇降體17E的昇降引導機構17K會被配設成位於馬達17H與昇降體17E之間。此昇降引導機構17K是具有:立設在基體17B上的線性滑軌17L、及經由至少二列的交叉滾柱軸承(參照圖3(b))來與線性滑軌17L卡合,按照線性滑軌17L來昇降引導昇降體17E的卡合體17M。因此,昇降體17E是移動體17C會經由驅動機構17F來移動於前後,藉此可經由具有至少二列的交叉滾柱軸承的昇降引導機構17K來昇降。 In the base body 17B, the elevation guide mechanism 17K of the elevation guide lifter 17E is disposed between the motor 17H and the lifter 17E. The lift guide mechanism 17K has a linear slide rail 17L that is erected on the base body 17B, and a cross slide roller bearing (see FIG. 3(b)) that is engaged with the linear slide rail 17L via at least two rows, and is linearly slid The rail 17L lifts and lowers the engaging body 17M of the guide lifter 17E. Therefore, the elevating body 17E moves the moving body 17C forward and backward via the drive mechanism 17F, whereby the elevating body 17E can be moved up and down via the elevating guide mechanism 17K having at least two rows of crossed roller bearings.
如圖4、圖5所示般,制動機構20是具備:軸(shaft)22,其係藉由固定用治具21來垂直固定於 昇降體17E;把持機構23,其係把持此軸22;基座24,其係用以將把持機構23固定於支撐柱16;及電磁閥25,其係用以控制往把持機構23之壓縮空氣的供給。 As shown in FIGS. 4 and 5, the brake mechanism 20 includes a shaft 22 that is vertically fixed to the fixture 21 for fixing. a lifting body 17E; a holding mechanism 23 for holding the shaft 22; a base 24 for fixing the holding mechanism 23 to the support column 16; and a solenoid valve 25 for controlling the compressed air to the holding mechanism 23. Supply.
如圖6、圖7所示般,把持機構23是具備框體30,在此框體30內收容有制動金屬31及活塞32。 As shown in FIGS. 6 and 7, the grip mechanism 23 includes a housing 30 in which the brake metal 31 and the piston 32 are housed.
由上方來看時,制動金屬31是在中央部具有圓形的空隙31A,具有一方成為開放部31B之大致U字狀的形狀,形成在中央部的圓形的空隙31A內收容軸22而把持的構成。並且,活塞32是具有V字形狀的插入部33,藉由將此插入部33插脫於制動金屬31的開放部31B內,進行制動金屬31之軸22的把持及開放。 When viewed from above, the brake metal 31 has a circular recess 31A at the center portion, and has a substantially U-shaped shape in which one open portion 31B is formed, and the shaft 22 is accommodated in the circular recess 31A formed at the center portion and held. Composition. Further, the piston 32 is a V-shaped insertion portion 33, and the insertion portion 33 is inserted into the open portion 31B of the brake metal 31 to hold and open the shaft 22 of the brake metal 31.
在藉由制動金屬31來把持軸22的狀態下,形成對頂板15的昇降施以制動的狀態。另一方面,制動金屬31之軸22的把持被開放的狀態是形成制動被解除的狀態。活塞32是從框體30的活塞32的背面側(圖6、圖7中上側)所配設的制動開放埠34來導入壓縮空氣等,藉此如圖6的箭號所示般,形成朝圖6中下方驅動的構成。 In a state where the shaft 22 is gripped by the brake metal 31, a state in which the lift of the top plate 15 is braked is formed. On the other hand, the state in which the grip of the shaft 22 of the brake metal 31 is opened is a state in which the brake is released. The piston 32 is introduced from the brake opening 34 provided on the back side (upper side in FIGS. 6 and 7) of the piston 32 of the casing 30 to introduce compressed air or the like, thereby forming a direction as indicated by an arrow in FIG. The composition of the lower drive in Fig. 6.
另外,圖6是表示從制動開放埠34導入壓縮空氣等,將活塞32的插入部33插入至制動金屬31的開放部31B內,而將軸22開放的狀態。並且,圖7是表示排出壓縮空氣,將活塞32的插入部33從制動金屬31的 開放部31B內抽出,藉由制動金屬31來把持軸22的狀態。 In addition, FIG. 6 shows a state in which compressed air or the like is introduced from the brake opening port 34, and the insertion portion 33 of the piston 32 is inserted into the opening portion 31B of the brake metal 31 to open the shaft 22. Further, Fig. 7 shows that the compressed air is discharged, and the insertion portion 33 of the piston 32 is removed from the brake metal 31. The open portion 31B is extracted and the state of the shaft 22 is gripped by the brake metal 31.
其次,說明有關動作。首先,為了進行晶圓W的檢查,將探針卡12安裝於卡夾緊機構14。就這樣安裝探針卡12之下,探針卡12與晶圓吸盤11上的晶圓W不一定會形成平行。於是,進行探針卡12的對準。 Second, explain the relevant actions. First, in order to inspect the wafer W, the probe card 12 is attached to the card clamping mechanism 14. When the probe card 12 is mounted in this manner, the probe card 12 and the wafer W on the wafer chuck 11 are not necessarily formed in parallel. Thus, the alignment of the probe card 12 is performed.
如圖8的流程圖所示般,探針卡12的對準是利用測定機器來測定探針卡(P.C)12與晶圓W的平行度(步驟701)。亦即,利用此測定機器來以複數處測定探針卡12與晶圓W間的距離,測定探針卡12對於晶圓吸盤11上的晶圓W的傾斜。測定機器的測定結果是被傳送至控制裝置。 As shown in the flowchart of Fig. 8, the alignment of the probe card 12 is performed by measuring the parallelism of the probe card (P.C.) 12 and the wafer W by a measuring device (step 701). That is, the inclination of the probe card 12 with respect to the wafer W on the wafer chuck 11 is measured by measuring the distance between the probe card 12 and the wafer W at a plurality of points by the measuring device. The measurement result of the measuring machine is transmitted to the control device.
控制裝置是根據測定結果來判斷在複數處所測定後的距離的差是否為所定值以內(步驟702)。 The control device determines whether or not the difference in the distance measured at the plurality of points is within a predetermined value based on the measurement result (step 702).
然後,當距離的差不為所定值以內時,開啟壓縮空氣,從制動機構20的制動開放埠34導入壓縮空氣,將活塞32的插入部33插入至制動金屬31的開放部31B內,而解除制動機構20的制動(步驟703)。 Then, when the difference in distance is not within the predetermined value, the compressed air is turned on, the compressed air is introduced from the brake opening 埠 34 of the brake mechanism 20, and the insertion portion 33 of the piston 32 is inserted into the open portion 31B of the brake metal 31 to be released. Braking of the brake mechanism 20 (step 703).
其次,對任一昇降機構17的驅動機構17F傳送控制訊號,個別控制驅動機構17F(步驟704)。藉此,各驅動機構17F會驅動,各個的移動體17C會經由第1移動引導機構17I來僅移動所定尺寸。隨之,各昇降體17E會經由第2移動引導機構17J來僅昇降所定尺寸,昇降體17E會使頂板15僅所定的尺寸昇降,調整頂板15的傾斜 情況,使探針卡12與晶圓吸盤11上的晶圓W形成平行。 Next, the control signal is transmitted to the drive mechanism 17F of any of the lift mechanisms 17, and the drive mechanism 17F is individually controlled (step 704). Thereby, each drive mechanism 17F is driven, and each moving body 17C moves only a predetermined size via the 1st movement guidance mechanism 17I. Accordingly, each of the elevating bodies 17E is lifted and lowered by a predetermined size via the second movement guide mechanism 17J, and the elevating body 17E raises and lowers the top plate 15 only by a predetermined size, and adjusts the inclination of the top plate 15. In this case, the probe card 12 is formed in parallel with the wafer W on the wafer chuck 11.
其次,關閉壓縮空氣,從制動機構20排出壓縮空氣,將活塞32的插入部33從制動金屬31的開放部31B內抽出,使制動機構20成為作動狀態,形成施以制動的狀態(步驟705)。 Then, the compressed air is shut off, the compressed air is discharged from the brake mechanism 20, and the insertion portion 33 of the piston 32 is withdrawn from the open portion 31B of the brake metal 31, and the brake mechanism 20 is actuated to form a brake (step 705). .
其次,回到步驟701,利用測定機器來再度測定探針卡(P.C)12與晶圓W的平行度。 Next, returning to step 701, the parallelism of the probe card (P.C.) 12 and the wafer W is again measured by the measuring device.
重複進行以上的步驟至複數處測定後的距離的差為所定值以內,形成所定的平行度為止。然後,當複數處測定後的距離的差為所定值以內時,終了處理(步驟706)。 The above steps are repeated until the difference between the distances measured at the plurality of points is within a predetermined value to form a predetermined parallelism. Then, when the difference in the distance after the measurement at the plurality of points is within the predetermined value, the processing is terminated (step 706).
在上述工程中,用以視察平行度的探針卡12與晶圓W間的距離的測定是例如在圖9所示的測定點1,2,3等的3處進行。另外,在圖9中,下方為顯示探針裝置10的前方側,上方為顯示探針裝置10的後方側,在後方側的測定點1的附近配設有制動機構20。 In the above-described project, the measurement of the distance between the probe card 12 for inspecting the parallelism and the wafer W is performed, for example, at three points of measurement points 1, 2, and 3 shown in FIG. In FIG. 9, the lower side is the front side of the display probe device 10, the upper side is the rear side of the display probe device 10, and the brake mechanism 20 is disposed in the vicinity of the measurement point 1 on the rear side.
在上述的測定點1,2,3測定藉由晶圓吸盤11來將作為接觸荷重的160kgf的荷重從下側朝上側施加時的各點1,2,3之頂板15的變位量。此結果在測定點1的附近具有制動機構20之本實施形態的探針裝置10是成為:測定點1:13μm At the measurement points 1, 2, and 3 described above, the displacement amount of the top plate 15 of each of the points 1, 2, and 3 when the load of 160 kgf as the contact load is applied from the lower side to the upper side by the wafer chuck 11 is measured. As a result, the probe device 10 of the present embodiment having the brake mechanism 20 in the vicinity of the measurement point 1 is: measuring point 1:13 μm
測定點2:9μm Measuring point 2: 9μm
測定點3:14μm Measuring point 3: 14μm
比較例是藉由不具制動機構20的探針裝置來實施同樣的測定。其結果是成為:測定點1:17μm In the comparative example, the same measurement was carried out by a probe device having no brake mechanism 20. The result is: measurement point 1: 17 μm
測定點2:9μm Measuring point 2: 9μm
測定點3:14μm Measuring point 3: 14μm
由以上的結果可知,藉由制動機構20的作用,可抑制施加諸接觸荷重時的頂板15的變位量來使變位量均一化,可精度佳地維持探針卡與半導體晶圓的平行度。另外,藉由配設制動機構20,可使該部分的剛性提升20~30%程度。 As is apparent from the above results, by the action of the brake mechanism 20, the amount of displacement of the top plate 15 when the contact loads are applied can be suppressed to uniformize the amount of displacement, and the probe card can be accurately parallelized with the semiconductor wafer. degree. Further, by providing the brake mechanism 20, the rigidity of the portion can be increased by 20 to 30%.
另外,本發明並不限於上述實施形態,當然可實施各種的變形。 Further, the present invention is not limited to the above embodiment, and various modifications can of course be implemented.
10‧‧‧探針裝置 10‧‧‧ probe device
11‧‧‧晶圓吸盤(載置台) 11‧‧‧ wafer suction cup (mounting table)
12‧‧‧探針卡 12‧‧‧ Probe Card
12A‧‧‧探針 12A‧‧‧Probe
13‧‧‧卡夾具 13‧‧‧Card fixture
14‧‧‧卡夾緊機構 14‧‧‧Card clamping mechanism
15‧‧‧頂板 15‧‧‧ top board
16‧‧‧支撐柱 16‧‧‧Support column
17‧‧‧昇降機構 17‧‧‧ Lifting mechanism
17B‧‧‧基體 17B‧‧‧ substrate
17C‧‧‧移動體 17C‧‧‧Mobile
17E‧‧‧昇降體 17E‧‧‧ Lifting body
17F‧‧‧驅動機構 17F‧‧‧ drive mechanism
17N‧‧‧帽簷狀部 17N‧‧‧Hat
17K‧‧‧昇降引導機構 17K‧‧‧ Lifting guide mechanism
20‧‧‧制動機構 20‧‧‧ brake mechanism
W‧‧‧半導體晶圓 W‧‧‧Semiconductor Wafer
R‧‧‧連接環 R‧‧‧ connection ring
Claims (8)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012038733A JP2013175572A (en) | 2012-02-24 | 2012-02-24 | Probe device and parallelism adjustment mechanism of probe card |
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| TW201346267A true TW201346267A (en) | 2013-11-16 |
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| TW102105832A TW201346267A (en) | 2012-02-24 | 2013-02-20 | Probe apparatus and parallelism adjustment mechanism of a probe card |
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| JP (1) | JP2013175572A (en) |
| KR (1) | KR20130097668A (en) |
| CN (1) | CN103293349A (en) |
| TW (1) | TW201346267A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103616627A (en) * | 2013-11-18 | 2014-03-05 | 中国科学院苏州生物医学工程技术研究所 | Semiconductor laser chip testing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6070659B2 (en) | 2014-09-05 | 2017-02-01 | トヨタ自動車株式会社 | Particulate filter abnormality diagnosis device |
| JP6515007B2 (en) * | 2015-09-30 | 2019-05-15 | 東京エレクトロン株式会社 | Wafer inspection method and wafer inspection apparatus |
| CN106291308B (en) * | 2016-08-30 | 2019-04-23 | 南京博泰测控技术有限公司 | Remote Chip Inspection System for Graphene Probe Sensing Unit |
| CN106206355B (en) * | 2016-08-30 | 2018-11-27 | 重庆市妙格半导体研究院有限公司 | Semiconductor detection system based on graphene sensing unit |
| CN106249121B (en) * | 2016-08-30 | 2019-04-16 | 烟台台芯电子科技有限公司 | Utilize the method with graphene probe batch detection semiconductor devices |
| KR101794602B1 (en) | 2017-01-26 | 2017-11-07 | 주식회사 쎄믹스 | Chuck movement apparatus using a hexapod structure |
| CN110361650A (en) * | 2019-07-25 | 2019-10-22 | 哲为(上海)仪器科技有限公司 | Efficient EL detects electrifying device |
| CN110376406A (en) * | 2019-08-14 | 2019-10-25 | 大连藏龙光电子科技有限公司 | Miniature probe station and operation method thereof |
| CN113820593B (en) * | 2021-11-22 | 2022-02-15 | 深圳市诺泰芯装备有限公司 | SOIC encapsulation high temperature test device |
| JP7745466B2 (en) * | 2022-01-17 | 2025-09-29 | 株式会社日本マイクロニクス | Inspection system and inspection method |
| JP2024117598A (en) * | 2023-02-17 | 2024-08-29 | 東京エレクトロン株式会社 | Stage, inspection apparatus, and stage operation method |
| CN119644232B (en) * | 2025-02-11 | 2025-06-24 | 杭州长川科技股份有限公司 | Leveling method, device, equipment and storage medium of probe card |
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| JP3781541B2 (en) * | 1997-12-26 | 2006-05-31 | 株式会社日本マイクロニクス | Manual prober |
| JP2009277773A (en) * | 2008-05-13 | 2009-11-26 | Micronics Japan Co Ltd | Probing device |
| JP5222038B2 (en) * | 2008-06-20 | 2013-06-26 | 東京エレクトロン株式会社 | Probe device |
| JP5557547B2 (en) * | 2010-02-10 | 2014-07-23 | 株式会社アドバンテスト | Test head and semiconductor wafer test apparatus provided with the same |
| JP5826466B2 (en) * | 2010-06-25 | 2015-12-02 | 東京エレクトロン株式会社 | Probe card parallel adjustment mechanism and inspection device |
-
2012
- 2012-02-24 JP JP2012038733A patent/JP2013175572A/en active Pending
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2013
- 2013-02-20 TW TW102105832A patent/TW201346267A/en unknown
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103616627A (en) * | 2013-11-18 | 2014-03-05 | 中国科学院苏州生物医学工程技术研究所 | Semiconductor laser chip testing device |
| CN103616627B (en) * | 2013-11-18 | 2016-05-11 | 中国科学院苏州生物医学工程技术研究所 | A kind of semiconductor laser chip testing arrangement |
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| JP2013175572A (en) | 2013-09-05 |
| KR20130097668A (en) | 2013-09-03 |
| CN103293349A (en) | 2013-09-11 |
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