TW201332138A - Semiconductor lighting module and manufacturing method thereof - Google Patents

Abstract

A semiconductor lighting module and a manufacturing method thereof are provided. The semiconductor lighting module includes a substrate, a zener diode and a light emitting diode (LED). The substrate has a concave. The zener diode is disposed in the concave. The LED is disposed on the substrate and electronically connected to the zener diode. A projection range of the LED overlaps the concave.

Description

Semiconductor light source module and manufacturing method thereof

The present invention relates to a semiconductor light source module and a method of fabricating the same, and more particularly to a semiconductor light source module incorporating a light emitting diode and a semiconductor diode and a method of fabricating the same.

With the development of semiconductor technology, various semiconductor light sources continue to evolve. For example, a light-emitting diode generates an electroluminescence effect by combining electrons and holes therein. The wavelength of the light of the light-emitting diode is related to the type of semiconductor material used and the dopant. The light-emitting diode has the advantages of high efficiency, long life, not easy to break, high switching speed, high reliability, etc., so that the light-emitting diode has been widely used in various electronic products.

The light-emitting diode system uses semiconductor devices to make individual crystal grains. In some designs, in order to increase the stability of the light-emitting diode, some passive components are also fabricated through the semiconductor device, so that the light-emitting diode and the passive component are combined to improve the stability of the light-emitting diode.

The present invention relates to a semiconductor light source module and a method of fabricating the same, which utilizes a groove design such that a passive component such as a Zener diode can be buried within the substrate without increasing the thickness of the substrate. In addition, in the manufacturing process, the step of burying the diode can be completed directly by using the packaging device, without expensive semiconductor equipment, and the manufacturing cost is greatly reduced.

According to an aspect of the invention, a semiconductor light source module is provided. The semiconductor light source module comprises a substrate, a semiconductor diode and a light emitting diode (LED). The substrate has a recess. The Jenus diode is placed in the groove. The light emitting diode is disposed on the substrate and electrically connected to the Zener diode. The projection range of the light-emitting diode covers the groove.

According to another aspect of the present invention, a method of fabricating a semiconductor light source module is provided. The manufacturing method of the semiconductor light source module includes the following steps. A substrate is provided. The substrate has a recess. Set a register of diodes in the recess. A light emitting diode is disposed on the substrate. The light-emitting diode is electrically connected to the arrester diode. The projection range of the light-emitting diode covers the groove.

In order to make the above-mentioned contents of the present invention more comprehensible, the following specific embodiments, together with the drawings, are described in detail below:

The following is a detailed description of the embodiments, which are intended to be illustrative only and not to limit the scope of the invention. In addition, the drawings in the embodiments omit unnecessary elements to clearly show the technical features of the present invention.

Please refer to FIG. 1 , which illustrates a schematic diagram of a semiconductor light source module 100 . The semiconductor light source module 100 includes a substrate 110, a Zener diode 120, and a light emitting diode (LED) 130. The substrate 110 is used to carry components and lay a line, such as a germanium substrate or a laminated substrate. The Jenus diode 120 has a circuit voltage regulation function that can adjust the operating voltage and serve as an electrostatic discharge (ESD) protection circuit. The light emitting diode 130 is used to emit light, and the material thereof is, for example, aluminum gallium arsenide (AlGaAs), aluminum gallium phosphide (AlGaP), indium gallium phosphide (AlGaInP), gallium arsenide (GaAsP), gallium phosphide. (GaP), gallium nitride (GaN), indium gallium nitride (InGaN) or aluminum gallium nitride (AlGaN).

As shown in FIG. 1, the substrate 110 has a recess 111. The gate electrode 120 is disposed in the recess 111. The light emitting diode 130 is disposed on the substrate 110 and electrically connected to the gate diode 120. The projection range of the light emitting diode 130 covers the groove 111. The semiconductor diode 120 can be disposed in the substrate 110 by using a packaging device such as a crystal, a seal, or a reflow, without using complicated and expensive semiconductor devices. The process using the packaged device not only has the advantages of low cost, but also has the advantages of high yield and high speed.

In terms of the design of the groove 111, the groove 111 may be a flat bottom tapered structure, a pointed bottom tapered structure or a columnar structure. In the present embodiment, the groove 111 is a flat bottom tapered structure. That is, the groove 111 has a bottom surface 111a and a side wall 111b. The bottom surface 111a is substantially flat, the side wall 111b is substantially inclined to the bottom surface 111a, and the width W111 of the groove 111 is gradually increased from the bottom surface 111a toward the opening 111c.

In addition, the depth D111 of the groove 111 is greater than the thickness D120 of the arrester diode 120, so that the gate diode 120 can be completely accommodated in the groove 111. In this way, the semiconductor diode 120 can be buried in the substrate 110 without increasing the volume of the semiconductor light source module 100.

In addition, the semiconductor light source module 100 further includes a first filling material 140 , a second filling material 150 , a transparent encapsulant 160 , a first wire 170 , and a second wire 180 . The material of the first filling material 140, the second filling material 150 and the transparent encapsulant 160 may be epoxy resin, polyurethane, organic germanium, acrylic resin or polyester. The materials of the first filling material 140, the second filling material 150 and the transparent encapsulant 160 may be the same, two of them are the same, or all three are different. Designers can make choices based on the needs of the process.

The first filling material 140 is filled in the recess 111 and covers the gate diode 120 to protect the gate diode 120 from moisture or contamination by the particles. In the present embodiment, the first filling material 140 completely fills the groove 111.

The second filling material 150 is disposed on the first filling material 140 to fill the gap between the first filling material 140 and the light emitting diode 130 to enable the light emitting diode 130 to be well supported.

The transparent encapsulant 160 covers the light emitting diode 130 to protect the light emitting diode 130 from moisture or contamination by the particles. The transparent encapsulant 160 is transparent so that the light of the LED 230 can penetrate the transparent encapsulant 160. The surface of the transparent sealant 160 has an arc shape so that the light can be refracted and can be emitted in a large angular range.

In terms of the arrangement of the light-emitting diodes 130, the light-emitting diodes 130 may be connected to the substrate 110 by means of a flip chip or by wire bonding. In the present embodiment, the light emitting diode 130 is connected to the substrate 110 in a flip chip bonding manner.

The substrate 110 has a first surface 110a and a second surface 110b. The opening 111c of the groove 111 is located on the first surface 110a. The semiconductor diode 120 has a third surface 120a and a fourth surface 120b. The third surface 120a is adjacent to the opening 111c of the groove 111. The fourth surface 120b is adjacent to the bottom surface 111a of the groove 111.

For the first wire 170 and the second wire 180, the first wire 170 and the second wire 180 are electrically connected to the Zener diode 120 and the light emitting diode 130. The first wire 170 and the second wire 180 may extend from the same surface of the gate diode 120 or may extend from different surfaces of the gate electrode 120. The paths of the first wire 170 and the second wire 180 are also not limited to one mode. In this embodiment, the first wire 170 and the second wire 180 are all connected to the light emitting diode 130 from the fourth surface 120b.

As shown in FIG. 1 , the first wire 170 extends from the fourth surface 120 b of the gate electrode 120 , penetrates the bottom surface 111 a and the second surface 110 b of the groove 111 , and is laid along the second surface 110 b . After the two surfaces 110b and the first surface 110a, the light emitting diodes 130 are electrically connected. Similarly, the second wire 180 extends from the fourth surface 120b of the gate electrode 120, penetrates the bottom surface 111a and the second surface 110b of the groove 111, and is laid along the second surface 110b and penetrates the second surface 110b. After the first surface 110a, the light emitting diode 130 is electrically connected.

A portion of the first conductive line 170 and a portion of the second conductive line 180 on the first surface 110a have a certain thickness D170, D180, and thus the light emitting diode 130 is not flat on the first surface 110a. When the thickness D150 of the second encapsulation material 150 is substantially equal to the thickness D170, D180 of the first surface 170 and the second wire 180, the second encapsulation material 150 substantially fills the LED and the first surface. A gap between 110a provides sufficient support for the light-emitting diode 130.

For the manufacturing method of the semiconductor light source module 100, please refer to FIGS. 2-10, which illustrate a schematic diagram of a method of fabricating the semiconductor light source module 100 of the present embodiment. First, as shown in Fig. 2, a substrate 110 is provided. The material of the substrate 110 is, for example, tantalum. The substrate 110 is subjected to a high temperature furnace control process, and the substrate 110 is covered by the ruthenium oxide layer 112.

Next, as shown in FIG. 3, a photoresist layer 113 is formed. After the photoresist layer 113 is exposed and developed, the patterned photoresist layer 113 is used as a mask to etch the ruthenium oxide layer 112.

Then, as shown in FIGS. 3 to 4, the photoresist layer 113 is removed, and the first surface 110a of the substrate 110 is etched using the patterned ruthenium oxide layer 112 as a mask. In this step, the substrate 110 is etched out of the groove 111, the first recessed hole 114, and the second recessed hole 115. The depths D111, D114, and D115 of the groove 111, the first recessed hole 114, and the second recessed hole 115 are substantially the same. At this time, the first recessed hole 114 and the second recessed hole 115 are not penetrated.

Then, as shown in FIGS. 4 to 5, the first through hole 116 and the second through hole 117 are etched from the second surface 110b of the substrate 110 corresponding to the first recessed hole 114 and the second recessed hole 115, and The third through hole 118 and the fourth through hole 119 are etched from the second surface 110b of the substrate 110 corresponding to the groove 111.

Then, as shown in FIG. 6, the substrate 110 is again subjected to the high temperature furnace control process, and the first through hole 116, the second through hole 117, the third through hole 118, and the fourth through hole 119 are made of a ruthenium oxide layer. Covered by 112.

Then, as shown in FIG. 7, the third through hole 118, the second surface 110b and the first through hole 116 are subjected to an electroplating process to form the first wire 170; and the fourth through hole 119 and the portion The second surface 110b and the second through hole 117 are subjected to an electroplating process to form the second wire 180.

Then, as shown in FIG. 8, the semiconductor diode 120 is disposed in the recess 111 and filled with the first filling material 140 in the recess 111 to cover the gate diode 120.

Next, as shown in FIG. 9 , the second filling material 150 is filled on the first filling material 140 , and the light emitting diode 130 is disposed on the substrate 110 , so that the second filling material 150 is disposed on the first filling material 140 and Between the light emitting diodes 130.

Then, as shown in Fig. 10, a transparent encapsulant 160 is disposed on the light emitting diode 130. At this point, the semiconductor diode 120 is buried in the substrate 110, and the semiconductor diode 120 and the light-emitting diode 130 are also electrically connected and packaged. Through the manufacturing method of the embodiment, the semiconductor diode 120 can be buried in the packaging process equipment, and can be completed without expensive semiconductor equipment.

In addition, please refer to FIG. 11 , which illustrates a schematic diagram of another semiconductor light source module 200 . In one embodiment, the second wire 280 of the semiconductor light source module 200 can extend from the third surface 220a of the semiconductor diode 220 and extend substantially perpendicularly to the surface of the first filling material 240 and then be laid on the substrate 210. A portion of the first surface 210a is electrically connected to the light emitting diode 230.

Furthermore, please refer to FIG. 12 , which illustrates a schematic diagram of another semiconductor light source module 300 . In one embodiment, the first wire 370 and the second wire 380 of the semiconductor light source module 300 may extend from the fourth surface 320b of the semiconductor diode 320 and be laid on the sidewall 311b of the groove 311 and a portion thereof. The first surface 310a is electrically connected to the light emitting diode 330.

In addition, please refer to FIG. 13 , which illustrates a schematic diagram of another semiconductor light source module 400 . In one embodiment, the first wire 470 of the semiconductor light source module 400 can extend from the fourth surface 420b of the semiconductor diode 420 and be laid on the sidewall 411b of the recess 411 and a portion of the first surface of the substrate 410. 410a is electrically connected to the light emitting diode 430. The second wire 480 of the semiconductor light source module 400 may extend from the third surface 420a of the semiconductor diode 420 and extend substantially perpendicularly to the surface of the first filling material 440 to be disposed on a portion of the first surface 410a. The light emitting diode 130 is electrically connected.

Furthermore, please refer to FIG. 14 , which illustrates a schematic diagram of another semiconductor light source module 500 . In an embodiment, the substrate 510 of the semiconductor light source module 500 can be placed upside down. The first wire 570 and the second wire 580 may extend from the fourth surface 520b of the sigma diode 520, penetrate the bottom surface 510a of the groove 511 and the second surface 510b of the substrate 510, and then lay along the second surface 510b to The light emitting diode 530 is electrically connected.

Furthermore, please refer to FIG. 15 , which illustrates a schematic diagram of another semiconductor light source module 600 . In an embodiment, the substrate 610 of the semiconductor light source module 600 can be placed upside down. The first wire 670 extends from the fourth surface 620b of the sigma diode 620, and extends through the bottom surface 611a of the groove 611 and the second surface 610b of the substrate 610 along the second surface 610b to electrically connect the light-emitting diodes. 630. The second wire 680 may extend from the third surface 620a of the semiconductor diode 620 and extend substantially perpendicularly to the surface of the first filling material 640, after being laid along a portion of the first surface 610a of the substrate 610, A surface 610a and a second surface 610b are electrically connected to the light emitting diode 630.

Furthermore, please refer to FIG. 16 , which illustrates a schematic diagram of another semiconductor light source module 700 . In an embodiment, the substrate 710 of the semiconductor light source module 700 can be placed upside down. The first wire 770 and the second wire 780 may extend from the fourth surface 720b of the gate 720 and are disposed on the sidewall 711b of the groove 711 and a portion of the first surface 710a of the substrate 710, and penetrate the first surface. The 710a and the second surface 710b are electrically connected to the light emitting diode 730.

In addition, please refer to FIG. 17 , which illustrates a schematic diagram of another semiconductor light source module 800 . In an embodiment, the substrate 810 of the semiconductor light source module 800 can be placed upside down. The first wire 870 can extend from the fourth surface 820b of the gate 820 and is disposed on the sidewall 811b of the recess 811 and a portion of the first surface 810a of the substrate 810, and penetrates the first surface 810a and the second surface. 810b is electrically connected to the light emitting diode 830. The second wire 880 can extend from the third surface 820a of the semiconductor diode 820 and extend substantially perpendicularly to the surface of the first filling material 840, and then lays over a portion of the first surface 810a of the substrate 810. A surface 810a and a second surface 810b are electrically connected to the LED 830.

In addition, please refer to FIG. 18 , which illustrates a schematic diagram of another semiconductor light source module 900 . In one embodiment, the LED 930 of the semiconductor light source module 900 can be connected to the substrate 910 by wire bonding.

Through the design of the above embodiment, the semiconductor diodes 120 to 920 can be buried in the substrates 110 to 920 without increasing the thickness of the substrates 110 to 910. In addition, in the manufacturing process, the steps of embedding the dipoles 120-920 can be completed directly by using the packaging equipment, without expensive semiconductor equipment, and the manufacturing cost is greatly reduced.

In conclusion, the present invention has been disclosed in the above embodiments, but it is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100, 200, 300, 400, 500, 600, 700, 800, 900. . . Semiconductor light source module

110, 210, 310, 410, 510, 610, 710, 810, 910. . . Substrate

110a, 210a, 310a, 410a, 610a, 710a, 810a. . . First surface

110b, 510b, 610b, 710b, 810b. . . Second surface

111, 311, 411, 511, 611, 711, 811. . . Groove

111a, 511a, 611a. . . Bottom

111b, 311b, 411b, 711b, 811b. . . Side wall

111c. . . Opening

112. . . Cerium oxide layer

113. . . Photoresist layer

114. . . First recess

115. . . Second recess

116. . . First through hole

117. . . Second through hole

118. . . Third through hole

119. . . Fourth through hole

120, 220, 320, 420, 520, 620, 720, 820, 920. . . Jenus diode

120a, 220a, 420a, 620a, 820a. . . Third surface

120b, 320b, 420b, 520b, 620b, 720b, 820b. . . Fourth surface

130, 230, 330, 430, 530, 630, 730, 830, 930. . . Light-emitting diode

140, 240, 440, 640, 840. . . First filling material

150. . . Second filling material

160. . . Transparent sealant

170, 370, 470, 570, 670, 770, 870. . . First wire

180, 280, 380, 480, 580, 680, 780, 880. . . Second wire

D111, D114, D115, D120, D150, D170, D180. . . thickness

W111. . . width

FIG. 1 is a schematic view showing a semiconductor light source module.

2 to 10 are schematic views showing a method of manufacturing the semiconductor light source module of the embodiment.

FIG. 11 is a schematic view showing another semiconductor light source module.

FIG. 12 is a schematic view showing another semiconductor light source module.

FIG. 13 is a schematic view showing another semiconductor light source module.

FIG. 14 is a schematic view showing another semiconductor light source module.

FIG. 15 is a schematic view showing another semiconductor light source module.

FIG. 16 is a schematic view showing another semiconductor light source module.

FIG. 17 is a schematic view showing another semiconductor light source module.

FIG. 18 is a schematic view showing another semiconductor light source module.

100. . . Semiconductor light source module

110. . . Substrate

110a. . . First surface

110b. . . Second surface

111. . . Groove

111a. . . Bottom

111b. . . Side wall

111c. . . Opening

120. . . Jenus diode

120a. . . Third surface

120b. . . Fourth surface

130. . . Light-emitting diode

140. . . First filling material

150. . . Second filling material

160. . . Transparent sealant

170. . . First wire

180. . . Second wire

D111, D120, D150, D170, D180. . . thickness

W111. . . width

Claims (17)

A semiconductor light source module includes: a substrate having a recess; a zener diode disposed in the recess; and a light emitting diode (LED) disposed on the substrate The substrate is electrically connected to the gate electrode, and a projection range of the light emitting diode covers the groove. The semiconductor light source module of claim 1, wherein the depth of the groove is greater than the thickness of the arrester diode. The semiconductor light source module of claim 1, further comprising: a first filling material filled in the recess and covering the arrester diode. The semiconductor light source module of claim 3, further comprising: a second filling material disposed between the first filling material and the light emitting diode. The semiconductor light source module of claim 4, wherein the material of the first filling material is the same as the material of the second filling material. The semiconductor light source module of claim 4, wherein the material of the first filling material is different from the material of the second filling material. The semiconductor light source module of claim 1, wherein the light emitting diode system is connected to the substrate by a flip chip. The semiconductor light source module of claim 1, wherein the light emitting diode system is connected to the substrate by wire bonding. The semiconductor light source module of claim 1, wherein the substrate has a first surface and a second surface, the opening of the recess is located on the first surface, and the light emitting diode is disposed on the first surface. The semiconductor light source module of claim 1, wherein the substrate has a first surface and a second surface, the opening of the groove is located on the first surface, and the light emitting diode is disposed on the second surface. The semiconductor light source module of claim 1, wherein the semiconductor diode has a third surface and a fourth surface, the third surface being adjacent to the opening of the recess, the fourth The surface of the semiconductor light source module further includes: a first wire connected to the light emitting diode from the fourth surface to electrically connect the gate electrode and the light emitting diode And a second wire connected to the light emitting diode from the fourth surface or the third surface to electrically connect the gate electrode and the light emitting diode. The semiconductor light source module of claim 11, wherein a portion of the first wire extends through the bottom surface of the groove and the second surface, and a portion of the first wire is laid on the second surface, and A portion of the first wire extends through the first surface and the second surface. The semiconductor light source module of claim 11, wherein a portion of the first wire is laid on a sidewall of the groove, and a portion of the first wire is laid on the first surface. The semiconductor light source module of claim 1, wherein the groove is a flat bottom tapered structure, a pointed bottom tapered structure or a columnar structure. A method of fabricating a semiconductor light source module, comprising: providing a substrate having a recess; providing a zener diode in the recess; and providing a light emitting diode The LED is electrically connected to the semiconductor diode, and the projection range of the LED covers the recess. The method for manufacturing a semiconductor light source module according to claim 15, further comprising: filling a first filling material in the recess and covering the gate electrode. The method for manufacturing a semiconductor light source module according to claim 16, further comprising: filling a second filling material on the first filling material, so that the second filling material is disposed on the first filling material and Between the light-emitting diodes.