TW201336114A - Semiconductor package and its manufacturing method - Google Patents

Abstract

The invention provides a semiconductor package and the manufacturing method thereof, the method comprising forming a substrate having a groove formed thereon, forming a circuit layer on the substrate and the groove, disposing a LED chip in the groove and electrically connecting the LED chip to the circuit layer, and forming a fluorescent layer on the substrate, thereby separately disposing the fluorescent layer and the LED chip to enhance white light emission.

Description

Semiconductor package and its manufacturing method

The present invention relates to a semiconductor package and a method of fabricating the same, and more particularly to a semiconductor package having a light-emitting element and a method of fabricating the same.

In the field of LED (Light Emitting Diode) packaging, the traditional fluorescent layer coating technology, such as random-distribution, has been unable to meet the characteristics of high color rendering uniformity and high output lumens. Therefore, new fluorescent layer coating technologies have been developed, such as conformal-coated and remote phosphor. Among them, the coating type coating method focuses on improving the uniformity of white LED color rendering, while the far-end phosphor coating method focuses on improving the light output of white LEDs.

However, in the current technological development, the power of the LED is improved by the coating and the remote phosphor coating, but the heat dissipation function of the LED is affected. Generally, the heat dissipation path of the LED package can be directly transmitted into the air or transmitted to the atmosphere through the circuit board. When the power of the LED chip is increased, the heat dissipation function of the carrier of the LED package is not relatively improved. As a result, it is often impossible to efficiently transfer thermal energy from the carrier board to the circuit board, resulting in poor heat dissipation through the heat dissipation mode of the circuit board.

Furthermore, the semiconductor package No. 1242895 or the semiconductor package 1 , 1 ′ shown in FIGS. 1A and 1B is a carrier wafer 10 having high heat resistance and high thermal conductivity, and is formed with an electrical connection pad 110 . The circuit layer 11 is disposed on the carrier board 10, and the LEDs 12, 12' are disposed on the carrier board 10, and the electrical connection pads 110 are electrically connected by the bonding wires 16 or the conductive bumps 16'. A fluorescent package 14 is further formed to cover the light emitting diode chips 12, 12'.

Although the conventional semiconductor package 1, 1' uses the germanium wafer as the carrier 10 to efficiently transfer the heat generated by the LED chips 12, 12' to an external circuit board (not shown), In the light powder coating technology, only a random distribution method can be used, that is, the fluorescent powder (the fluorescent package 14) contacts the light-emitting diode 12, 12' light-emitting surface 12a, and the remote phosphor cannot be taken. The coating method causes the light output of white light to not be enhanced.

Therefore, how to overcome the problem that the above-mentioned conventional technology cannot simultaneously improve the luminous power and the heat dissipation function has become a problem to be solved at present.

In view of the above-mentioned deficiencies of the prior art, the present invention provides a semiconductor package comprising: a substrate having opposite first and second surfaces, and having grooves formed on the first surface; Forming on the first surface of the substrate and the groove groove surface; the light emitting diode chip is disposed in the groove of the substrate and electrically connected to the circuit layer; and the fluorescent layer is formed on the substrate On the surface.

The invention provides a method for fabricating a semiconductor package, comprising: providing a substrate having a first surface and a second surface opposite to each other, wherein a first surface of the substrate is formed with a groove; and forming a circuit layer on the substrate a surface and a groove surface; forming a phosphor layer on the second surface of the substrate; and disposing a light-emitting diode chip in the groove, and electrically connecting the light-emitting diode chip to the circuit layer.

In the above-mentioned semiconductor package and method of manufacturing the same, the light-emitting diode wafer has a first light-emitting surface and a second light-emitting surface, and the light-emitting diode wafer is bonded to the recess by the first light-emitting surface thereof. On the bottom surface, the substrate may have sides adjacent to the first and second surfaces, and the phosphor layer is formed on the side of the substrate, and the substrate may be a glass ceramic substrate.

In addition, in the foregoing semiconductor package and the manufacturing method thereof, the LED chip may be electrically connected to the circuit layer by wire bonding, eutectic or flip chip, and an encapsulant may be formed to encapsulate the LED chip. Wherein, the encapsulant can be silicone or epoxy.

As can be seen from the above, the semiconductor package of the present invention and the method of manufacturing the same, by forming a phosphor layer on the second surface of the substrate (optional on the side), that is, using a phosphor coating method of the remote phosphor In order to increase the luminous efficacy output of the LED white light, and using the substrate as a carrier plate to enhance the heat conduction of the wafer on the heat transfer path, the purpose of simultaneously improving the luminous power and the heat dissipation function can be achieved.

The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "upper", "bottom" and "one" are used in the description for the purpose of description, and are not intended to limit the scope of the invention. Adjustments, where there is no material change, are considered to be within the scope of the invention.

Referring to the manufacturing method of FIGS. 2A to 2E, the manufacturing method of the semiconductor package 2 disclosed in the present invention will be described in detail.

As shown in FIG. 2A, a substrate 20 having a first surface 20a and a second surface 20b opposite thereto is provided, and a groove 200 is formed on the first surface 20a of the substrate 20.

In the present embodiment, the substrate 20 is a glass ceramic substrate (thermal conductivity < 10 w/mk), and the substrate 20 has a side surface 20c adjacent to the first and second surfaces 20a, 20b. In addition, the groove 200 is formed by etching, but is not limited thereto.

As shown in FIG. 2B, a copper circuit layer 21 is formed on the first surface 20a of the substrate 20 and the groove surface of the recess 200. The circuit layer 21 has a plurality of electrical connection pads 210.

As shown in FIG. 2C, a phosphor layer 23 is formed on the second surface 20b and the side surface 20c of the substrate 20 by a phosphor coating method of the distal phosphor.

As shown in FIG. 2D, a light-emitting diode wafer 22 having a first light-emitting surface 22a and a second light-emitting surface 22b is bonded to the bottom surface 200a of the recess 200 with its first light-emitting surface 22a. A light emitting diode wafer 22 is located within the recess 200.

In this embodiment, the LED array 22 can be electrically connected to the electrical connection pads 210 of the circuit layer 21 by wire bonding, eutectic or flip chip. As shown in FIG. 2D, the second light emitting surface 22b of the LED chip 22 is electrically connected to the electrical connection pad 210 on the first surface 20a by a bonding wire 26; or as shown in FIG. 2E' The first light emitting surface 22a of the LED chip 22' can be electrically connected to the electrical connection pad 210' located on the bottom surface 200a of the recess 200 by the conductive bumps 26'.

As shown in FIGS. 2E and 2E', the encapsulant 24 such as silicone or epoxy is used to coat the LED wafer 22, 22', the bonding wire 26 (or the conductive bump 26') and the wiring layer. twenty one.

The method of the present invention can quickly transfer the heat generated by the LED wafer 22 to an external circuit board (not shown) by using a glass ceramic substrate as a carrier plate to enhance the LED array 22 Thermal conduction on the heat transfer path, and by bonding the first light-emitting surface 22a of the light-emitting diode wafer 22 to the bottom surface 200a of the recess 200, the phosphor layer 23 can be illuminated by the remote phosphor. The powder coating method is formed on the second surface 20b of the substrate 20 to increase the light output of the LED white light. Therefore, compared with the prior art, the method of the invention can simultaneously improve the luminous power and the heat dissipation function.

Referring to Figure 3, the present invention further provides a semiconductor package 2, 2' comprising a substrate 20, a wiring layer 21, a light emitting diode wafer 22, a phosphor layer 23, and an encapsulant 24.

The substrate 20 is a glass ceramic substrate, and has a first surface 20a, a second surface 20b, and a side surface 20c adjacent to the first and second surfaces 20a, 20b, and is formed on the first surface 20a. Groove 200.

The circuit layer 21 is formed on the first surface 20a of the substrate 20 and the groove surface of the recess 200.

The LED chips 22, 22' are disposed in the recess 200 and electrically connected to the circuit layer 21. The LED wafers 22, 22' have opposite first light emitting surfaces 22a and 2 The light-emitting surface 22b is such that the light-emitting diode wafers 22, 22' are bonded to the bottom surface 200a of the recess 200 by the first light-emitting surface 22a, and the light-emitting diode wafers 22, 22' are lined and eutectic. The circuit layer 21 is electrically connected to the flip chip.

The phosphor layer 23 is formed on the second surface 20b and the side surface 20c of the substrate 20.

The encapsulant 24 is a silicone or epoxy resin that encapsulates the LED wafers 22, 22'.

In summary, the semiconductor package of the present invention and the method for fabricating the same are in that the light-emitting diode chip is not in contact with the phosphor layer, so that the light-emitting diode crystal can be uniformly mixed to avoid uneven light. The output of white light, in turn, improves the light conversion efficiency, and when the light emitting diode wafer emits light to generate thermal energy, heat energy can be transmitted to the circuit board through the substrate to achieve the desired heat dissipation effect. Therefore, the present invention effectively achieves the purpose of simultaneously improving the luminous power and the heat dissipation function.

The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.

1, 1', 2, 2'. . . Semiconductor package

10. . . Carrier board

11, 21. . . Circuit layer

110, 210, 210’. . . Electrical connection pad

12, 12', 22, 22'. . . Light-emitting diode chip

12a. . . Luminous surface

14. . . Fluorescent package

16, 26. . . Welding wire

16’, 26’. . . Conductive bump

20. . . Substrate

20a. . . First surface

20b. . . Second surface

20c. . . side

200. . . Groove

200a. . . Bottom

22a. . . First luminous surface

22b. . . Second luminous surface

twenty three. . . Fluorescent layer

twenty four. . . Encapsulant

1A and 1B are schematic cross-sectional views showing a conventional semiconductor package;

2A to 2E are schematic cross-sectional views showing a method of fabricating a semiconductor package of the present invention; wherein, the second E' is another embodiment of the second embodiment;

Figure 3 is a perspective, partial, side elevational view of a semiconductor package of the present invention.

2. . . Semiconductor package

20. . . Substrate

20a. . . First surface

20b. . . Second surface

200. . . Groove

200a. . . Bottom

twenty one. . . Circuit layer

210. . . Electrical connection pad

twenty two. . . Light-emitting diode chip

22a. . . First luminous surface

22b. . . Second luminous surface

twenty three. . . Fluorescent layer

twenty four. . . Encapsulant

26. . . Welding wire

Claims (14)

A semiconductor package includes: a substrate having opposite first and second surfaces, and a groove formed on the first surface; and a circuit layer formed on the first surface of the substrate and the groove groove The light emitting diode chip is disposed in the groove of the substrate and electrically connected to the circuit layer; and the fluorescent layer is formed on the second surface of the substrate. The semiconductor package of claim 1, wherein the light emitting diode chip has a first light emitting surface and a second light emitting surface, so that the light emitting diode wafer is bonded to the first light emitting surface thereof On the bottom surface of the groove. The semiconductor package of claim 1, wherein the substrate is a glass ceramic substrate. The semiconductor package of claim 1, wherein the substrate has sides adjacent to the first and second surfaces, and the phosphor layer is formed on a side of the substrate. The semiconductor package of claim 1, wherein the light emitting diode chip is electrically connected to the circuit layer by wire bonding, eutectic or flip chip. The semiconductor package of claim 1, further comprising an encapsulant covering the LED chip. The semiconductor package of claim 6, wherein the encapsulant system is silicone or epoxy. A method of fabricating a semiconductor package, comprising: providing a substrate having a first surface and a second surface opposite to each other, wherein a recess is formed on a first surface of the substrate; forming a circuit layer on the first surface of the substrate and recessed a light-emitting layer is formed on the second surface of the substrate; and a light-emitting diode chip is disposed in the recess, and the light-emitting diode chip is electrically connected to the circuit layer. The method of manufacturing the semiconductor package of claim 8, wherein the light emitting diode chip has a first light emitting surface and a second light emitting surface, and the first light emitting surface is coupled to the groove On the bottom surface. The method of fabricating a semiconductor package according to claim 8, wherein the substrate is a glass ceramic substrate. The method of fabricating a semiconductor package according to claim 8, wherein the substrate has sides adjacent to the first and second surfaces, and the phosphor layer is formed on a side of the substrate. The method of fabricating a semiconductor package according to claim 8, wherein the light emitting diode chip is electrically connected to the circuit layer by wire bonding, eutectic or flip chip. The method of fabricating the semiconductor package of claim 8, further comprising forming an encapsulant to encapsulate the LED chip. The method of manufacturing a semiconductor package according to claim 13, wherein the encapsulant system is silicone or epoxy.