TW201335326A - Method for manufacturing semiconductor device and adhesive film used in the method for manufacturing the semiconductor device - Google Patents

Abstract

An object of the present invention is to provide a method of manufacturing a semiconductor device which can improve the dicing reliability of an adhesive film and can suppress chip contamination of the adhesive film. The present invention provides a method of manufacturing a semiconductor device, comprising: forming a groove on a surface of a semiconductor wafer, attaching a protective adhesive film, performing back grinding of the semiconductor wafer, and exposing the groove from the back surface; A step of peeling off the protective adhesive film after attaching the adhesive film to the back surface of the circle, and a step of cutting the adhesive film by irradiating a laser having a wavelength of 355 nm along a groove exposed from the film surface. Next, the film: (a) the absorption coefficient at a wavelength of 355 nm is 40 cm-1 or more, and (b) the tensile storage elastic modulus at 50 ° C is 0.5 MPa or more, 20 MPa or less, and (c) at 120 ° C. The melt viscosity of the storage elastic modulus of 0.3 MPa or more, 7 MPa or less, or 120 ° C is 2000 Pa. s above.

Description

Method for manufacturing semiconductor device and adhesive film used in the method for manufacturing the semiconductor device

The present invention relates to a method of fabricating a semiconductor device and a bonding film used in the method of fabricating the semiconductor device.

Previously, in the manufacturing process of a semiconductor device, the fixing of the semiconductor wafer on the lead frame or the electrode member was performed using a silver paste. This fixing treatment is performed by applying a paste-like adhesive to a die pad or the like of a lead frame, mounting a semiconductor wafer thereon, and curing the paste-like adhesive layer.

However, the paste-like adhesive may cause a large variation in the amount of application or the shape of the coating due to its viscosity characteristics, deterioration, and the like. As a result, the thickness of the formed paste-like adhesive becomes uneven, and thus the fixing strength of the semiconductor wafer lacks reliability. That is, if the coating amount of the paste-like adhesive is insufficient, the fixing strength between the semiconductor wafer and the electrode member is lowered, and the semiconductor wafer is peeled off in the subsequent wire bonding step. On the other hand, if the amount of the paste-like adhesive applied is too large, the paste is next The agent will be cast onto the semiconductor wafer to cause poor properties and yield or reliability is reduced. The problem in such a fixing process becomes particularly remarkable as the size of the semiconductor wafer is increased. Therefore, it is necessary to frequently control the amount of application of the paste-like adhesive, which hinders workability or productivity.

In the step of applying the paste-like adhesive, there is a method of additionally applying a paste-like adhesive to the lead frame or the formed wafer. However, in this method, it is difficult to achieve homogenization of the paste-like adhesive layer, and a special device or a long time is required in the application of the paste-like adhesive. Therefore, it has been proposed to hold the semiconductor wafer in the dicing step and also to provide a dicing film for the adhesive layer for wafer fixation required in the mounting step (see, for example, Patent Document 1).

The dicing film is formed by peelably providing an adhesive layer on a support substrate, and after the semiconductor wafer is diced by the holding of the adhesive layer, the support substrate is extended to form The wafer is peeled off together with the adhesive layer, and these are separately collected and fixed to the adherend such as a lead frame via the adhesive layer.

When a dicing-mud film having a die bond film laminated on a dicing film is used, and the semiconductor wafer is diced while the die film is held, the die film and the semiconductor wafer are simultaneously required. Cutting. However, in the conventional dicing method using a diamond blade, there is a concern that the die bond film and the dicing film are bonded by the influence of heat generated during dicing, and the semiconductor wafers are fixed to each other by chipping and chipping. Attached to the side of the semiconductor wafer, etc., it is necessary to slow down the cutting speed, resulting in an increase in cost.

Patent Document 2 discloses a method of manufacturing a semiconductor device as follows: self-form a surface of the wafer on which the semiconductor circuit is formed is formed with a groove having a shallower depth than the thickness of the wafer, and a surface protection sheet is attached to the surface of the circuit, and the back surface of the semiconductor wafer is ground to thereby thin the thickness of the wafer. And finally, the wafer is divided into individual wafers, and a dicing-adhesive wafer including a substrate and an adhesive layer formed on the substrate is attached to the grinding surface, and the surface protective sheet is peeled off, and the diced-adhesive wafer exposed between the wafers is cut. The adhesive layer is peeled off from the substrate of the diced-adhesive wafer together with the wafer, and the wafer is fixed to a specific base via the adhesive layer.

In the method of manufacturing a semiconductor device described in Patent Document 2, an adhesive layer exposed between wafers is cut using a dicing blade. Further, the width of the dicing blade used for dicing the adhesive layer is a width which is narrower than the groove width of the wafer, and the blade width is preferably about 30% to 90% of the inter-wafer groove width. However, in the method of manufacturing a semiconductor device of Patent Document 2, the diced adhesive layer attached to the back surface of the wafer may be larger than the wafer in a plan view and protrude from the wafer. Adjacent adhesive layers protruding from the wafer have each other again due to their close proximity. Therefore, there is a problem that sometimes it becomes impossible to pick up. Further, when the adhesive layer is in a state of being protruded from the wafer, there is a problem that the wire bonding pad provided in the vicinity of the adhesive layer may be contaminated by a substance derived from the adhesive layer. In addition, there are problems in that wire bonding is sometimes difficult due to the protruding adhesive layer.

Patent Document 3 discloses the following method for manufacturing a semiconductor wafer with an adhesive, which comprises: (a) pre-corresponding to the surface of the semiconductor wafer substrate a portion of the portion, a step of processing the slit into a final thickness of the semiconductor wafer; (b) a step of bonding the protective adhesive tape to the surface of the diced semiconductor wafer substrate; (c) the semiconductor crystal a step of thinning the circular substrate to a thickness penetrated by the portion that has been previously grooved: (d) after the back surface of the semiconductor wafer substrate is finished, and bonding the protective adhesive tape to the semiconductor wafer a step of bonding the adhesive wafer to the back surface of the substrate; (de1) a step of further bonding a dicing tape to the adhesive wafer, wherein the dicing tape is formed on the substrate film and comprises an ultraviolet curing type which is hardened by irradiation with ultraviolet rays. (a) a step of curing the adhesive layer by irradiating ultraviolet rays from a side of the base film side of the dicing tape; (e) a step of adhering the adhesive layer along the semiconductor wafer The wafer and the hardened adhesive layer are irradiated with a laser to cut the adhesive wafer.

In the method of manufacturing a semiconductor wafer with an adhesive according to Patent Document 3, in a state in which a protective pressure-sensitive adhesive tape is bonded to a semiconductor wafer, a laser beam is irradiated from the side of the crystal film to cut the adhesive wafer. Therefore, chips (fragments) when the adhesive wafer is cut by laser are present on the protective adhesive tape to block the gap between the wafers. As a result, the chips at the time of cutting the adhesive wafer are welded to the adhesive wafer, and the dicing of the adhesive wafer cannot be performed properly. In particular, when the thickness of the wafer is thin, or when the thickness of the adhesive wafer is thick, the possibility of improperly cutting the adhesive wafer is extremely high. Therefore, there is a problem that the adhesive wafer cannot be peeled off from the dicing tape in the subsequent pick-up step.

Therefore, Patent Document 4 discloses a manufacturing method of a device including the following steps: a dividing groove forming step, which is formed on the surface of the wafer along a predetermined dividing line a dividing groove having a thickness corresponding to the thickness of the wafer; a protective film adhering step of applying a protective film to the surface of the wafer; and a back grinding step of grinding the back surface of the wafer until the dividing groove is exposed The wafer is divided into the respective wafers, and the film is pasted in a state in which a bonding film is adhered to the back surface of the wafer divided into a plurality of wafers, and the film is supported by the annular frame. a stripping tape having an elongation; and a film cutting step, after peeling off the protective film, and irradiating the bonding film with the laser beam passing through the dividing groove, thereby cutting the bonding film along the dividing groove (especially Refer to paragraph [0046], paragraph [0051], and Figure 10).

In the method of manufacturing the device described in Patent Document 4, the protective film is peeled off before the irradiation of the laser light. Therefore, it is possible to suppress the gap between the wafers from being clogged by the fragments when the film is bonded by the laser light.

[Prior Art Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 60-57642

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2001-156027

[Patent Document 3] Japanese Patent Laid-Open No. 2011-009763

[Patent Document 4] Japanese Patent Laid-Open Publication No. 2007-081037

However, in the method for manufacturing a device described in Patent Document 4, since the protective film is peeled off before the irradiation of the laser light, there is a possibility that the debris scattered from the adhesive film adheres to the surface of the wafer when the laser beam is irradiated. There is room for improvement in this area.

The present invention has been made in view of the above problems, and an object thereof is to provide a method for manufacturing a semiconductor device capable of improving dicing reliability of a bonding film and suppressing contamination of a film of a bonding film, and an adhesive film used in a method for manufacturing the semiconductor device. .

In order to solve the above-mentioned conventional problems, the inventors of the present application have studied the method for manufacturing a semiconductor device and the film for use in the method for manufacturing the semiconductor device. As a result, it was found that the dicing reliability of the adhesive film can be improved and the chip contamination of the adhesive film can be suppressed by adopting the following configuration, and the present invention has been completed.

That is, the method of manufacturing a semiconductor device according to the present invention includes the step of forming a groove having no back surface on the surface of the semiconductor wafer, and attaching the protective adhesive film to the surface of the semiconductor wafer on which the groove is formed. Step B: performing step S of grinding the back surface of the semiconductor wafer to expose the groove from the back surface; and after step C, attaching a film D to the back surface of the semiconductor wafer; after the step D, a step E of peeling off the protective adhesive film; and after the step E, irradiating the laser having a wavelength of 355 nm along the groove exposed by the adhesive film surface, and step F of cutting the adhesive film; the adhesive film: a) The absorption coefficient at a wavelength of 355 nm is 40 cm ^-1 or more, and (b) the tensile storage elastic modulus at 50 ° C is 0.5 MPa or more and 20 MPa or less, and (c) the tensile storage elastic mode at 120 ° C The melt viscosity of the number of 0.3 MPa or more, 7 MPa or less, or 120 ° C is 2000 Pa. s above.

According to the above configuration, since the film is cut by the laser, it is possible to suppress the diced adhesive film from protruding from the wafer in plan view. Further, according to the above configuration, the protective adhesive film is peeled off before the irradiation of the laser. Therefore, it is possible to suppress the gap between the wafers from being clogged by the fragments when the film is attached by laser cutting. As a result, the cutting reliability of the film by the laser can be improved.

Further, since the above-mentioned adhesive film has an absorption coefficient of (a) wavelength of 355 nm of 40 cm ^-1 or more, it can be preferably cut by a laser of 355 nm. Further, the adhesive film has a tensile storage elastic modulus of (b) at 50 ° C of 0.5 MPa or more and 20 MPa or less, and (c) a tensile storage elastic modulus at 120 ° C of 0.3 MPa or more and 7 MPa or less. Or the melt viscosity at 120 ° C is 2000 Pa. Above s, with a certain degree of hardness. Therefore, the amount of debris scattered from the adhesive film at the time of laser irradiation becomes small. As a result, it is possible to suppress the adhesion of debris to the surface of the wafer.

As described above, according to the above configuration, the cutting reliability of the adhesive film can be improved, and the chip contamination of the adhesive film can be suppressed.

In the above configuration, preferably, the adhesive film is a die-bonding film, and the step D is a step of attaching the die-bonding film to the back surface of the semiconductor wafer after the step C.

In the above configuration, it is preferable that the above-mentioned adhesive film is laminated on the dicing film.

In the above configuration, it is preferable that the adhesive film is a film for flip chip type semiconductor back surface formed on the back surface of the semiconductor element, and the semiconductor element is flip-chip bonded to the bonded body. Above, step D above is After the above step C, the step of attaching the film for flip chip type semiconductor back surface is attached to the back surface of the semiconductor wafer.

In the above configuration, it is preferable that the film for the flip chip type semiconductor back surface is laminated on the dicing film.

In the above configuration, the adhesive film preferably includes an epoxy resin and a phenol resin as a thermosetting resin, an acrylic resin as a thermoplastic resin, and a filler, and the total weight of the epoxy resin, the phenol resin, and the acrylic resin is set. When the weight of the filler is B parts by weight for A parts by weight, B/(A+B) is 0 or more and 0.7 or less. When the above B/(A+B) is 0.7 or less, it is easy to cut by a laser of 355 nm.

Further, the adhesive film of the present invention is an adhesive film used in the method for producing a semiconductor device described above, characterized in that (a) an absorption coefficient at a wavelength of 355 nm is 40 cm ^-1 or more, and (b) at 50 ° C. The tensile storage elastic modulus is 0.5 MPa or more and 20 MPa or less, and (c) the tensile storage elastic modulus at 120 ° C is 0.3 MPa or more, 7 MPa or less, or the molten viscosity at 120 ° C is 2000 Pa. s above.

According to the above configuration, since the above-mentioned adhesive film has a light absorption coefficient of (a) wavelength of 355 nm of 40 cm ^-1 or more, it can be preferably cut by a laser of 355 nm. Further, the adhesive film has a tensile storage elastic modulus of (b) at 50 ° C of 0.5 MPa or more and 20 MPa or less, and (c) a tensile storage elastic modulus at 120 ° C of 0.3 MPa or more and 7 MPa or less. Or the melt viscosity at 120 ° C is 2000 Pa. Above s, with a certain degree of hardness. Therefore, the amount of debris scattered from the adhesive film at the time of laser irradiation becomes small. As a result, it is possible to suppress the adhesion of debris to the surface of the wafer.

In the above configuration, the adhesive film preferably includes an epoxy resin and a phenol resin as a thermosetting resin, an acrylic resin as a thermoplastic resin, and a filler, and the total weight of the epoxy resin, the phenol resin, and the acrylic resin is set. When the weight of the filler is B parts by weight for A parts by weight, B/(A+B) is 0 or more and 0.7 or less. When the above B/(A+B) is 0.7 or less, it is easy to cut by a laser of 355 nm.

1‧‧‧Substrate

2‧‧‧Adhesive layer

3‧‧‧Met film

4‧‧‧Semiconductor wafer

4F‧‧‧ surface

4R‧‧‧Back

4S‧‧‧ slot

5‧‧‧Semiconductor wafer

6‧‧‧Binders

7‧‧‧welding line

8‧‧‧ Sealing resin

11‧‧‧Cleaning film

12‧‧‧Cut-mud film

41‧‧‧Rotating blade

42‧‧‧protective components

43‧‧‧

44‧‧‧Protective adhesive film

45‧‧‧ grinding grinding stone

50‧‧‧Laser

1 is a schematic cross-sectional view showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

3 is a schematic cross-sectional view showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

4 is a schematic cross-sectional view showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 5 is a schematic cross-sectional view showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 6 is a schematic cross-sectional view showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Figure 7 is a view showing a semiconductor device according to an embodiment of the present invention; A schematic cross-sectional view of the manufacturing process.

Fig. 8 is a schematic cross-sectional view showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Hereinafter, a method of manufacturing a semiconductor device according to an embodiment of the present invention will be described. Hereinafter, a case where the adhesive film of the present invention is a die-bonding film will be described first. 1 to 8 are schematic cross-sectional views for explaining a method of manufacturing a semiconductor device according to an embodiment of the present invention.

The method for manufacturing a semiconductor device according to the present embodiment includes at least a step A of forming a trench having a back surface on a surface of the semiconductor wafer, and a step B of attaching a protective adhesive film to a surface of the semiconductor wafer on which the trench is formed; a step C of polishing the back surface of the semiconductor wafer to expose the groove from the back surface; a step D of attaching the die film to the back surface of the semiconductor wafer after the step C; and the protection after the step D Step E of peeling off with an adhesive film; after the above step E, the above-mentioned groove exposed on the surface of the above-mentioned adhesive film is irradiated with a laser having a wavelength of 355 nm, and the step of cutting the above-mentioned adhesive film is F; the above-mentioned adhesive film: a) The absorption coefficient at a wavelength of 355 nm is 40 cm ^-1 or more, and (b) the tensile storage elastic modulus at 50 ° C is 0.5 MPa or more and 20 MPa or less, and (c) the tensile storage elastic mode at 120 ° C The melt viscosity of the number of 0.3 MPa or more, 7 MPa or less, or 120 ° C is 2000 Pa. s above. In addition, in this specification, the surface of a semiconductor wafer means the surface which formed the circuit.

[groove forming step]

First, as shown in FIG. 1, a groove 4S that does not reach the back surface 4R is formed on the surface 4F of the semiconductor wafer 4 by the rotary blade 41 (step A). Further, at the time of formation of the groove 4S, the semiconductor wafer 4 may be supported by a support substrate (not shown). The depth of the groove 4S can be appropriately set according to the thickness of the semiconductor wafer 4 or the like.

[Protection adhesive film attachment step]

Then, as shown in FIG. 2, the protective adhesive film 44 of the protective member 42 is attached to the surface 4F of the semiconductor wafer 4 in which the groove 4S is formed (step B). The protective member 42 includes an annular frame 43 having an opening at the center, and a protective adhesive film 44 attached to the back surface of the holder 43 and blocking the opening of the holder 43. The protective adhesive film 44 supports the semiconductor crystal by its adhesive force. Round 4. The protective adhesive film 44 can be used by a person skilled in the art (for example, refer to Japanese Laid-Open Patent Publication No. 2005-332873).

[Step of exposing the groove table]

Then, when the support substrate is used when the groove 4S is formed, it is peeled off. Then, as shown in FIG. 3, the back grinding is performed by grinding the grindstone 45, and the groove 4S is exposed from the back surface 4R (step C).

[Cutting-mud film attachment step]

Then, the dicing-mud film 12 is prepared. The dicing-mud film 12 has a structure in which a die-bonding film 3 is laminated on the dicing film 11 (see FIG. 4). The dicing film 11 is formed by laminating an adhesive layer 2 on a substrate 1, and the die film 3 is provided on the adhesive layer 2.

Then, as shown in FIG. 4, the die-bonding film 3 of the dicing-mud film 12 is attached to the back surface 4R of the semiconductor wafer 4 exposed in the groove 4S (step D). Also, in the half A conventionally known tape attaching device can be used for attaching the protective adhesive film 44 or the dicing-mud film 12 on the conductor wafer 4, and a conventionally known grinding device can be used for the back grinding.

Here, the dicing-mud film 12 and the viscous film 3 will be described.

(Cut-mud film)

As described above, the dicing-mud film 12 has a structure in which the die-bonding film 3 is laminated on the dicing film 11. The dicing film 11 is formed by laminating an adhesive layer 2 on a substrate 1, and the die film 3 is provided on the adhesive layer 2.

The substrate 1 serves as a strength matrix of the diced-mud film 12. Examples of the substrate 1 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, and homopolymerization. Polyolefin such as propylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, Alternately) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyurethanes, polyethylene terephthalate, polyethylene naphthalate and other polyesters, polycarbonates, Polyimine, polyetheretherketone, polyetherimide, polyamine, fully aromatic polyamine, polyphenyl sulfide, aromatic polyamine (paper), glass, glass cloth, fluororesin, Polyvinyl chloride, polyvinylidene chloride, cellulose resin, fluorenone resin, metal (foil), paper, and the like.

Further, examples of the material of the substrate 1 include polymers such as crosslinked bodies of the above resins. The above plastic film can be used without extension, and a single axis can be used as needed. Or a biaxial extension processor. According to the resin sheet which is heat-shrinkable by the stretching treatment or the like, the base material 1 is thermally shrunk after the dicing, and the adhesion area of the adhesive layer 2 and the adhesive film 3 is lowered, whereby the semiconductor wafer (semiconductor) can be realized. The recycling of components is easy.

The surface of the substrate 1 can be subjected to conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, ionizing radiation treatment, etc., in order to improve adhesion to an adjacent layer, retention, and the like. The physical treatment is carried out by a coating treatment of a primer (for example, an adhesive described later). The substrate 1 can be appropriately selected from the same species or different species, and a plurality of blenders can be used as needed.

The thickness of the substrate 1 is not particularly limited and can be appropriately determined, and is usually about 5 μm to 200 μm.

The adhesive for forming the pressure-sensitive adhesive layer 2 is not particularly limited, and for example, a usual pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used. In the above-mentioned pressure-sensitive adhesive, it is preferable to use an acrylic polymer as a basis in terms of cleanliness and cleaning properties of an organic solvent such as ultrapure water or alcohol in terms of semiconductor wafer or glass. A polymer based acrylic adhesive.

Examples of the acrylic polymer include alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, third butyl ester, and pentane). Ester, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, decyl, decyl, isodecyl, undecyl, dodecyl, tridecyl ester An alkyl group such as a tetradecyl ester, a hexadecyl ester, an octadecyl ester or an eicosyl ester having a carbon number of 1 to 30, In particular, one or more of a linear or branched alkyl ester having 4 to 18 carbon atoms and a cycloalkyl (meth)acrylate (for example, cyclopentyl ester or cyclohexyl ester) are used as a monomer component. Acrylic polymer, etc. Further, (meth) acrylate means acrylate and/or methacrylate, and all (meth) of the present invention have the same meaning.

The acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the alkyl (meth)acrylate or the cycloalkyl ester, if necessary, in order to improve cohesive strength, heat resistance, and the like. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and butyl. a carboxyl group-containing monomer such as an olefinic acid; an acid anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, or (meth)acrylic acid 4-hydroxybutyl ester, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, a hydroxyl group-containing monomer such as (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)propenylamine-2-methylpropanesulfonate a sulfonic acid group-containing monomer such as an acid, (meth) acrylamide, propanesulfonic acid, sulfopropyl (meth) acrylate, (meth) propylene phthaloxy naphthalene sulfonic acid; 2-hydroxyethyl acrylonitrile a phosphate group-containing monomer such as a phosphate ester; acrylamide, acrylonitrile, or the like. These monomer components which can be copolymerized may be used alone or in combination of two or more. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total of the monomer components.

In addition, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary, for crosslinking. Such a polyfunctional monomer For example, hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(methyl) Acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy (methyl) Acrylate, polyester (meth) acrylate, (meth) acrylate urethane, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of use of the polyfunctional monomer is preferably 30% by weight or less of all the monomer components in terms of adhesion characteristics and the like.

The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization can also be carried out by any one of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like. In terms of preventing contamination of the adhered body to be cleaned, it is preferred that the content of the low molecular weight substance is small. In this respect, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

Further, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably used as the above-mentioned adhesive. A specific method of the external crosslinking method is a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine-based crosslinking agent to carry out a reaction. When an external crosslinking agent is used, the amount thereof can be appropriately determined depending on the balance with the base polymer to be crosslinked, and further depending on the intended use of the adhesive. Usually, it is preferably about 5 parts by weight based on 100 parts by weight of the above base polymer. The following, more preferably, 0.1 parts by weight to 5 parts by weight. Further, as the adhesive, if necessary, additives such as various conventionally known adhesion-imparting agents and anti-aging agents may be used in addition to the above components.

The adhesive layer 2 can be formed by a radiation hardening type adhesive. The radiation-curable adhesive can increase the degree of crosslinking by irradiation with radiation such as ultraviolet rays, thereby easily reducing the adhesion thereof, and by irradiating only the portion corresponding to the attached portion of the workpiece of the adhesive layer 2 with radiation. Set the adhesion to other parts.

In addition, in the range which is slightly narrower than the portion to which the die-bonding film 3 is attached, the radiation-curable pressure-sensitive adhesive layer 2 is previously cured, whereby the portion where the adhesion is remarkably lowered can be easily formed. Since the adhesive film 3 is attached to the portion where the adhesion is lowered by hardening, the interface between the portion where the adhesion of the adhesive layer 2 is lowered and the surface of the adhesive film 3 has a property of being easily peeled off at the time of picking up. On the other hand, the portion where the radiation is not irradiated has a sufficient adhesive force, and the semiconductor wafer can be surely held at the time of dicing.

As described above, in the adhesive layer 2 of the dicing-mud film 12, the portion formed by the uncured radiation-curable adhesive adheres to the adhesive film 3, and the holding force at the time of crystal cutting can be ensured. In this manner, the radiation-curable adhesive can support the die-bonding film 3 for fixing a wafer-like workpiece (a semiconductor wafer or the like) to a bonded body such as a substrate, in such a manner as to have a good balance with adhesion.

The radiation-curable adhesive can be used without any particular limitation, and has a radiation curable functional group such as a carbon-carbon double bond and exhibits adhesiveness. The radiation-curable adhesive can be exemplified by the above-mentioned acrylic adhesive, rubber adhesive, and the like. In the pressure-sensitive adhesive, an addition type radiation curable adhesive in which a radiation curable monomer component or an oligomer component is blended is used.

Examples of the radiation curable monomer component to be blended include a urethane oligomer, a (meth)acrylic acid urethane, a trimethylolpropane tri(meth)acrylate, and a tetramethylol group. Methane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1 , 4-butanediol di(meth)acrylate, and the like. In addition, examples of the radiation curable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and the molecular weight thereof is about 100 to 30,000. The scope is appropriate. The blending amount of the radiation curable monomer component or the oligomer component can be appropriately determined depending on the type of the adhesive layer, and the amount of adhesion of the adhesive layer can be appropriately reduced. It is usually, for example, 5 parts by weight to 500 parts by weight, preferably 40 parts by weight to 150 parts by weight, per 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

Further, in addition to the above-described additive-type radiation-curable adhesive, the radiation-curable adhesive may, for example, be an intrinsic type radiation-curable adhesive, which is used in a polymer side chain or a main chain or at the end of a main chain. Those with carbon-carbon double bonds. Since the intrinsic type radiation curable adhesive does not need to contain or contain a large amount of an oligomer component or the like as a low molecular component, the oligomer component or the like does not move in the adhesive over time, and a stable layer structure can be formed. The layer of adhesive is therefore preferred.

The base polymer having a carbon-carbon double bond described above can be used without any particular limitation, and has a carbon-carbon double bond and has adhesiveness. Such a base polymer is preferably an acrylic polymer as a basic skeleton. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.

The introduction method of introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. However, introduction of a carbon-carbon double bond to a polymer side chain facilitates molecular design. For example, a method in which a monomer having a functional group is copolymerized into an acrylic polymer in advance, and a functional group capable of reacting with the functional group and carbon is maintained while maintaining the radiation curability of the carbon-carbon double bond. A compound having a carbon double bond undergoes a condensation or addition reaction.

Examples of the combination of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group and an isocyanate group. Among the combinations of these functional groups, a combination of a hydroxyl group and an isocyanate group is preferred in terms of ease of reaction tracking. Further, in the case where a combination of the above-mentioned functional groups is used to form the above-mentioned acrylic polymer having a carbon-carbon double bond, the functional group may be present on either side of the acrylic polymer and the above compound. In the above preferred combination, the acrylic polymer has a hydroxyl group, and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacrylonitrile isocyanate, 2-methylpropenyloxyethyl isocyanate, and iso-isopropenyl-α, α-di Methyl benzyl ester and the like. Further, as the acrylic polymer, the above-exemplified hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether or 4-hydroxybutyl vinyl ether can be used. A copolymer of a monovinyl ether ether compound or the like.

The above-mentioned intrinsic radiation curable adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, but the radiation curable monomer may be blended to the extent that the properties are not deteriorated. Ingredient or oligomer component. The radiation curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 parts by weight to 10 parts by weight, per 100 parts by weight of the base polymer.

The radiation curable adhesive may contain a photopolymerization initiator when it is cured by ultraviolet rays or the like. The photopolymerization initiator may, for example, be 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2 An α-keto alcohol compound such as methyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinylpropane-1 and other acetophenone compounds; benzoin ether, A benzoin ether compound such as benzoin isopropyl ether or anisoin methyl ether; a ketal compound such as benzyl dimethyl ketal; and an aromatic sulfonium chloride compound such as 2-naphthalene sulfonium chloride; Photoactive lanthanide compounds such as 1-benzophenone-1,1-propanedione-2-(o-ethoxycarbonyl)anthracene; benzophenone, benzhydrylbenzoic acid, 3,3'-dimethyl a benzophenone compound such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone a thioxanthone compound such as isopropyl thioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone or 2,4-diisopropylthioxanthone; Camphorquinon e); halogenated ketone; acyl phosphinoxide; thiol phosphate. Relative to the composition The compounding amount of the photopolymerization initiator is, for example, about 0.05 parts by weight to 20 parts by weight, based on 100 parts by weight of the base polymer such as the acrylic polymer of the coating agent.

In addition, the radiation-curable adhesive includes, for example, an addition polymerizable compound having two or more unsaturated bonds and an alkoxysilane having an epoxy group, as disclosed in JP-A-60-196956. A polymerizable compound, a rubber-based adhesive such as a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine or a phosphonium salt compound, or an acrylic adhesive.

The radiation curable adhesive layer 2 may contain a compound colored by radiation irradiation as needed. The adhesive layer 2 contains a compound colored by radiation irradiation, whereby only the portion irradiated with radiation can be colored. Therefore, it is possible to immediately recognize whether or not the radiation is irradiated to the adhesive layer 2 by visual observation, and it is easy to recognize the attached portion of the workpiece, and the attachment of the workpiece is easy. Further, when the semiconductor element is detected by a photo sensor or the like, the detection accuracy is improved, and erroneous operation at the time of picking up the semiconductor element can be prevented.

The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, and is preferably about 1 μm to 50 μm in terms of preventing the wafer cut surface from being damaged or the adhesion of the adhesive layer. More preferably, it is 2 μm to 30 μm, and particularly preferably 5 μm to 25 μm.

The laminated structure of the die-bonding film 3 is not particularly limited, and examples thereof include those having only a single layer of an adhesive layer or a multilayer structure in which an adhesive layer is formed on one surface or both surfaces of a core material. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), A resin substrate, a ruthenium substrate, or a glass substrate reinforced with a non-woven fiber made of glass fiber or plastic.

The adhesive composition constituting the above-mentioned die-bonding film 3 is exemplified by a thermoplastic resin and a thermosetting resin.

Examples of the thermosetting resin include a phenol resin, an amine resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, an anthrone resin, or a thermosetting polyimide resin. These resins may be used singly or in combination of two or more. In particular, an epoxy resin having a small content of ionic impurities or the like which causes corrosion of a semiconductor element is preferable. Further, the hardener of the epoxy resin is preferably a phenol resin.

The epoxy resin is not particularly limited as long as it is usually used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol can be used. A type, bisphenol AF type, biphenyl type, naphthalene type, hydrazine type, phenol novolak type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenylol ethane type, etc. Epoxy resin or polyfunctional epoxy resin, or epoxy resin such as hydantoin type, triglycidyl isocyanurate type or glycidylamine type. These can be used individually or in combination of 2 or more types. Among these epoxy resins, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type resin or a tetraphenol ethane type epoxy resin is particularly preferable. The reason is that these epoxy resins are rich in reactivity with a phenol resin as a curing agent, and are excellent in heat resistance and the like.

Further, the phenol resin exhibits a curing agent as the epoxy resin. Examples of the actioner include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, a nonylphenol novolak resin, and the like, and a novolak type phenol resin A phenol resin, a polyoxystyrene such as polyparaoxystyrene, or the like. These can be used individually or in combination of 2 or more types. Among these phenol resins, a phenol novolac resin and a phenol aralkyl resin are particularly preferred. The reason is that the connection reliability of the semiconductor device can be improved.

The blending ratio of the epoxy resin and the phenol resin is preferably, for example, 0.5 equivalent to 2.0 equivalents based on 1 equivalent of the epoxy group in the epoxy resin component and the hydroxyl group in the phenol resin. More preferably, it is 0.8 equivalent to 1.2 equivalent. That is, if the blending ratio of the two is outside the above range, a sufficient curing reaction is not performed, and the properties of the cured epoxy resin are likely to deteriorate.

Examples of the above thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutadiene. Resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, polyethylene terephthalate (PET) Or a saturated polyester resin such as polybutylene terephthalate (PBT), a polyamidoximine resin, or a fluororesin. These thermoplastic resins may be used singly or in combination of two or more. Among these thermoplastic resins, it is particularly preferable that the ionic impurities are small and the heat resistance is high, and the reliability of the semiconductor element can be ensured. Acrylic resin.

The acrylic resin is not particularly limited, and one or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having a carbon number of 30 or less, particularly a carbon number of 4 to 18, may be used. A polymer (acrylic copolymer) of the component or the like. Examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, tert-butyl group, isobutyl group, pentyl group, isopentyl group, hexyl group, heptyl group, cyclohexyl group, and 2- Ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecane Base, or dodecyl group, etc.

Further, the other monomer forming the above polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, and fumaric acid. Or various carboxyl group-containing monomers such as crotonic acid, various acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl methacrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate, (meth) acrylate 12- Various hydroxyl group-containing monomers such as hydroxylauryl ester or (4-hydroxymethylcyclohexyl)-methyl acrylate, styrenesulfonic acid, allylsulfonic acid, 2-(methyl)propenylamine-2-methyl Various sulfonic acid group-containing monomers such as propanesulfonic acid, (meth)acrylamide, propanesulfonic acid, sulfopropyl (meth)acrylate or (meth)acryloxynaphthalenesulfonic acid, or 2-hydroxyethyl Various phosphate group-containing monomers such as acryloylphosphoryl phosphate.

The ratio of the above thermosetting resin is such that it is heated under specific conditions. The degree to which the adhesive film 3 exhibits a function as a thermosetting type is not particularly limited, but is preferably in the range of 5% by weight to 60% by weight, more preferably in the range of 10% by weight to 50% by weight.

When the die-bonding film 3 is crosslinked to some extent in advance, a polyfunctional compound which reacts with a functional group at the end of the molecular chain of the polymer or the like may be added in advance as a crosslinking agent. Thereby, the adhesive property at a high temperature can be improved, and the heat resistance can be improved.

The above crosslinking agent can be used in the prior art. More preferably, it is preferably a polyisocyanate compound such as toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, or an adduct of a polyhydric alcohol and a diisocyanate. The amount of the crosslinking agent added is usually preferably from 0.05 part by weight to 7 parts by weight based on 100 parts by weight of the above polymer. If the amount of the crosslinking agent is more than 7 parts by weight, the subsequent force is lowered, which is not preferable. On the other hand, when the amount of the crosslinking agent is less than 0.05 part by weight, the cohesive strength is insufficient, which is not preferable. Further, other polyfunctional compounds such as an epoxy resin may be contained together with such a polyisocyanate compound as needed.

Further, an inorganic filler (filler) can be appropriately prepared depending on the use of the adhesive film 3. The formulation of the inorganic filler can impart conductivity or improve thermal conductivity, adjust the modulus of elasticity, and the like. Examples of the inorganic filler include ceramics such as ceria, clay, gypsum, calcium carbonate, barium sulfate, alumina oxide, barium oxide, tantalum carbide, and tantalum nitride, and aluminum, copper, silver, gold, nickel, and the like. Various inorganic powders such as metals such as chromium, lead, tin, zinc, palladium, and solder, or alloys, and other carbons. These can be used alone or in combination 2 Use more than one species. The average particle diameter of the inorganic filler is preferably in the range of 0.1 μm to 80 μm. The amount of the inorganic filler to be added is preferably from 0 to 80 parts by weight based on 100 parts by weight of the organic resin component. It is particularly preferably from 0 part by weight to 70 parts by weight.

In addition, the color film can be adjusted in the adhesive film 3. By modulating the colorant, the absorption coefficient of the crystal film 3 having a wavelength of 355 nm can be increased. The compounding amount can be 0.001 part by weight to 10 parts by weight based on 100 parts by weight of the organic component. The coloring material is not particularly limited as long as it can increase the absorption coefficient of the crystal film 3 having a wavelength of 355 nm. For such a color material, for example, various color-based color materials such as a black coloring material, a blue coloring material, and a red coloring material can be preferably used. The coloring material may be any one of a pigment, a dye, and the like. The coloring materials can be used singly or in combination of two or more. Further, the dye may be used in any form of a dye such as an acid dye, a reactive dye, a direct dye, a disperse dye, or a cationic dye. Further, the form of the pigment is not particularly limited, and can be appropriately selected from known pigments and used.

In particular, when a dye is used as the coloring material, the dye is uniformly or substantially uniformly dispersed in the adhesive film 3 by dissolution, so that the crystal film 3 having a uniform or substantially uniform coloring concentration can be easily produced.

The black coloring material is not particularly limited, and can be appropriately selected, for example, from an inorganic black pigment or a black dye. In addition, the black coloring material may be a mixture of a cyan coloring material (blue-green coloring material), a magenta coloring material (red purple coloring material), and a yellow (yellow coloring material) (yellow coloring material). a mixture of colorants. The black coloring materials can be used singly or in combination of two or more. Of course, black pigments can also be used in colors other than black. The coloring materials are used together.

Specifically, examples of the black coloring material include carbon black (furnace black, channel black, acetylene black, thermal black, lamp black, etc.), graphite, and graphite. Copper oxide, manganese dioxide, azo pigments (azomethineazoblack, etc.), nigrosine black, tantalum black, titanium black, cyanine black, activated carbon, ferrite (ferrite) (non-magnetic fertilizer) Granular iron, magnetic ferrite, etc.), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, composite oxide black pigment, lanthanide organic black pigment, and the like.

Black pigments can also be used: CI Solvent Black 3, CI Solvent Black 7, CI Solvent Black 22, CI Solvent Black 27, CI Solvent Black 29, CI Solvent Black 34, CI Solvent Black 43, CI Solvent Black 70, CI Direct Black 17, CI Direct Black 19, CI Direct Black 22, CI Direct Black 32, CI Direct Black 38, CI Direct Black 51, CI Direct Black 71, CI Acid Black 1, CI Acid Black 2, CI Acid Black 24, CI Acid Black 26, CI Acid Black 31, CI Acid Black 48, CI Acid Black 52, CI Acid Black 107, CI Acid Black 109, CI Acid Black 110, CI Acid Black 119, CI Acid Black 154, CI Disperse Black 1, CI Dispersion Black 3, CI Disperse Black 10, CI Disperse Black 24 and other black dyes; CI Pigment Black 1, CI Pigment Black 7 and other black pigments.

Such black color materials are commercially available, for example, under the trade name "Oil Black BY", under the trade name "Oil Black BS", under the trade name "Oil Black HBB", under the trade name "Oil Black 803", and under the trade name "Oil Black 860". , trade name "Oil Black 5970", trade name "Oil Black 5906", trade name "Oil Black 5905" (Oriental Chemical Industry) (Manufactured by Orient Chemical Industries Co., Ltd.) and the like.

Examples of the coloring material other than the black coloring material include a cyan coloring material, a magenta coloring material, and a yellow coloring material. Examples of the cyan coloring material include CI solvent blue 25, CI solvent blue 36, CI solvent blue 60, CI solvent blue 70, CI solvent blue 93, CI solvent blue 95, CI acid blue 6, CI acid blue 45, and the like. Dye; CI Pigment Blue 1, CI Pigment Blue 2, CI Pigment Blue 3, CI Pigment Blue 15, CI Pigment Blue 15:1, CI Pigment Blue 15:2, CI Pigment Blue 15:3, CI Pigment Blue 15:4, CI Pigment Blue 15:5, CI Pigment Blue 15:6, CI Pigment Blue 16, CI Pigment Blue 17, CI Pigment Blue 17:1, CI Pigment Blue 18, CI Pigment Blue 22, CI Pigment Blue 25, CI Pigment Blue 56 , CI Pigment Blue 60, CI Pigment Blue 63, CI Pigment Blue 65, CI Pigment Blue 66; CI Reduction Blue 4; CI Reduction Blue 60, CI Pigment Green 7 and other green pigments.

In the magenta coloring material, for example, CI solvent red 1, CI solvent red 3, CI solvent red 8, CI solvent red 23, CI solvent red 24, CI solvent red 25, CI solvent red 27, CI solvent red 30, CI solvent red 49, CI solvent red 52, CI solvent red 58, CI solvent red 63, CI solvent red 81, CI solvent red 82, CI solvent red 83, CI solvent red 84, CI solvent red 100, CI solvent red 109, CI solvent red 111, CI solvent red 121, CI solvent red 122; CI dispersion red 9; CI solvent violet 8, CI solvent violet 13, CI solvent violet 14, CI solvent violet 21, CI solvent violet 27; CI disperse purple 1; CI alkaline red 1, CI alkaline red 2, CI alkaline red 9, CI alkaline red 12, CI alkaline red 13, CI alkaline red 14, CI Basic red 15, CI alkaline red 17, CI alkaline red 18, CI alkaline red 22, CI alkaline red 23, CI alkaline red 24, CI alkaline red 27, CI alkaline red 29, CI alkaline Red 32, CI alkaline red 34, CI alkaline red 35, CI alkaline red 36, CI alkaline red 37, CI alkaline red 38, CI alkaline red 39, CI alkaline red 40; CI alkaline purple 1 , CI alkaline violet 3, CI alkaline violet 7, CI alkaline violet 10, CI alkaline violet 14, CI alkaline violet 15, CI alkaline violet 21, CI alkaline violet 25, CI alkaline violet 26, CI Basic purple 27, CI alkaline purple 28 and the like.

Among the magenta pigments, for example, CI Pigment Red 1, CI Pigment Red 2, CI Pigment Red 3, CI Pigment Red 4, CI Pigment Red 5, CI Pigment Red 6, CI Pigment Red 7, CI Pigment Red 8, CI Pigment Red 9, CI Pigment Red 10, CI Pigment Red 11, CI Pigment Red 12, CI Pigment Red 13, CI Pigment Red 14, CI Pigment Red 15, CI Pigment Red 16, CI Pigment Red 17, CI Pigment Red 18, CI Pigment Red 19, CI Pigment Red 21, CI Pigment Red 22, CI Pigment Red 23, CI Pigment Red 30, CI Pigment Red 31, CI Pigment Red 32, CI Pigment Red 37, CI Pigment Red 38, CI Pigment Red 39, CI Pigment Red 40, CI Pigment Red 41, CI Pigment Red 42, CI Pigment Red 48:1, CI Pigment Red 48:2, CI Pigment Red 48:3, CI Pigment Red 48:4, CI Pigment Red 49 , CI Pigment Red 49:1, CI Pigment Red 50, CI Pigment Red 51, CI Pigment Red 52, CI Pigment Red 52:2, CI Pigment Red 53:1, CI Pigment Red 54, CI Pigment Red 55, CI Pigment Red 56, CI Pigment Red 57:1, CI Pigment Red 58, CI Pigment Red 60, CI Pigment Red 60:1, CI Pigment Red 63, CI Pigment Red 63:1 , C.I. Pigment Red 63:2, C.I. Pigment Red 64, C.I. Pigment Red 64:1, CI pigment red 67, CI pigment red 68, CI pigment red 81, CI pigment red 83, CI pigment red 87, CI pigment red 88, CI pigment red 89, CI pigment red 90, CI pigment red 92, CI Pigment Red 101, CI Pigment Red 104, CI Pigment Red 105, CI Pigment Red 106, CI Pigment Red 108, CI Pigment Red 112, CI Pigment Red 114, CI Pigment Red 122, CI Pigment Red 123, CI Pigment Red 139, CI Pigment Red 144, CI Pigment Red 146, CI Pigment Red 147, CI Pigment Red 149, CI Pigment Red 150, CI Pigment Red 151, CI Pigment Red 163, CI Pigment Red 166, CI Pigment Red 168, CI Pigment Red 170, CI Pigment Red 171, CI Pigment Red 172, CI Pigment Red 175, CI Pigment Red 176, CI Pigment Red 177, CI Pigment Red 178, CI Pigment Red 179, CI Pigment Red 184, CI Pigment Red 185, CI Pigment Red 187, CI Pigment Red 190, CI Pigment Red 193, CI Pigment Red 202, CI Pigment Red 206, CI Pigment Red 207, CI Pigment Red 209, CI Pigment Red 219, CI Pigment Red 222, CI Pigment Red 224, CI Pigment Red 238, CI Pigment Red 245; CI Pigment Violet 3, CI Pigment Violet 9, CI Pigment Violet 19 CI pigment violet 23, CI pigment violet 31, CI pigment violet 32, CI pigment violet 33, CI pigment violet 36, CI pigment violet 38, CI pigment violet 43, CI pigment violet 50; CI reduction red 1, CI reduction red 2 CI reduction red 10, CI reduction red 13, CI reduction red 15, CI reduction red 23, CI reduction red 29, CI reduction red 35 and the like.

Further, examples of the yellow coloring material include CI Solvent Yellow 19, CI Solvent Yellow 44, CI Solvent Yellow 77, CI Solvent Yellow 79, CI Solvent Yellow 81, CI Solvent Yellow 82, CI Solvent Yellow 93, and CI Solvent Yellow 98. Yellow solvent such as CI Solvent Yellow 103, CI Solvent Yellow 104, CI Solvent Yellow 112, CI Solvent Yellow 162; CI Pigment Orange 31, CI Pigment orange 43; CI pigment yellow 1, CI pigment yellow 2, CI pigment yellow 3, CI pigment yellow 4, CI pigment yellow 5, CI pigment yellow 6, CI pigment yellow 7, CI pigment yellow 10, CI pigment yellow 11, CI Pigment Yellow 12, CI Pigment Yellow 13, CI Pigment Yellow 14, CI Pigment Yellow 15, CI Pigment Yellow 16, CI Pigment Yellow 17, CI Pigment Yellow 23, CI Pigment Yellow 24, CI Pigment Yellow 34, CI Pigment Yellow 35, CI Pigment Yellow 37, CI Pigment Yellow 42, CI Pigment Yellow 53, CI Pigment Yellow 55, CI Pigment Yellow 65, CI Pigment Yellow 73, CI. Pigment Yellow 74, CI Pigment Yellow 75, CI Pigment Yellow 81, CI Pigment Yellow 83, CI Pigment Yellow 93, CI Pigment Yellow 94, CI Pigment Yellow 95, CI Pigment Yellow 97, CI Pigment Yellow 98, CI Pigment Yellow 100, CI Pigment Yellow 101, CI Pigment Yellow 104, CI Pigment Yellow 108, CI Pigment Yellow 109, CI Pigment Yellow 110, CI Pigment Yellow 113, CI Pigment Yellow 114, CI Pigment Yellow 116, CI Pigment Yellow 117, CI Pigment Yellow 120, CI Pigment Yellow 128, CI Pigment Yellow 129, CI Pigment Yellow 133, CI Pigment Yellow 138, CI Pigment Yellow 139, CI Pigment Yellow 147, CI Pigment Yellow 150, CI Pigment Yellow 151, CI Pigment Yellow 153, C. I. Pigment Yellow 154, CI Pigment Yellow 155, CI Pigment Yellow 156, CI Pigment Yellow 167, CI Pigment Yellow 172, CI Pigment Yellow 173, CI Pigment Yellow 180, CI Pigment Yellow 185, CI Pigment Yellow 195; CI Reducing Yellow 1 , CI reduction yellow 3, CI reduction yellow 20 and other yellow pigments.

Each of the various color materials, such as a cyan coloring material, a magenta coloring material, and a yellow coloring material, may be used alone or in combination of two or more. In addition, when two or more kinds of coloring materials such as a cyan coloring material, a magenta coloring material, and a yellow coloring material are used, the mixing ratio (or the mixing ratio) of these coloring materials is not particularly limited, and may be depending on the type of each coloring material or Target color, etc. Appropriate choice.

Further, in addition to the above inorganic filler, the other candidate additive may be appropriately added to the above-mentioned inorganic filler. Examples of other additives include a flame retardant, a decane coupling agent, an ion scavenger, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These can be used individually or in combination of 2 or more types. Examples of the above decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropylmethyl group. Diethoxydecane, etc. These compounds can be used singly or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and barium hydroxide. These can be used individually or in combination of 2 or more types.

The thickness of the adhesive film 3 (the total thickness in the case of the laminated body) is not particularly limited, and is preferably 5 μm to 100 from the viewpoint of preventing the chip cut surface from being damaged or maintaining the coexistence by the adhesion of the adhesive layer. Μm, more preferably 5 μm to 60 μm, and particularly preferably 5 μm to 30 μm.

The optical film 3 has an absorption coefficient at a wavelength of 355 nm of 40 cm ^-1 or more, preferably 50 cm ^-1 or more, more preferably 60 cm ^-1 or more. Further, the above-mentioned light absorption coefficient is preferably large, and is, for example, 400 cm ^-1 or less and 1000 cm ^-1 or less. Since the above absorption coefficient is 40 cm ^-1 or more, the die film 3 can be preferably cut by a laser of 355 nm.

The tensile storage elastic modulus at 50 ° C of the adhesive film 3 is 0.5 MPa or more and 20 MPa or less, preferably 0.75 MPa or more and 19.5 MPa or less, more preferably It is 1 MPa or more and 19 MPa or less. Since the tensile storage elastic modulus at 50 ° C of the adhesive film 3 is 0.5 MPa or more and 20 MPa or less, the amount of fragments scattered from the adhesive film 3 at the time of laser irradiation becomes small. As a result, it is possible to suppress the adhesion of debris to the surface of the wafer.

Further, the tensile storage elastic modulus at 120 ° C of the adhesive film 3 is 0.3 MPa or more, 7 MPa or less, or the melt viscosity at 120 ° C is 2000 Pa. s above. The tensile storage elastic modulus at the above 120 ° C is preferably 0.35 MPa or more and 6.9 MPa or less, more preferably 0.38 MPa or more and 6.8 MPa or less. The melt viscosity at 120 ° C above is preferably 2150 Pa. Above s, more preferably 2200 Pa. s above. Further, the higher the melt viscosity at 120 ° C above, the better, but for example, 3000 Pa. s below, and then 4000 Pa. s below. The tensile storage elastic modulus at 120 ° C of the adhesive film 3 is 0.3 MPa or more, 7 MPa or less, or the melt viscosity at 120 ° C is 2000 Pa. s or more, the amount of debris scattered from the die film 3 at the time of laser irradiation is reduced. As a result, it is possible to suppress the adhesion of debris to the surface of the wafer.

The adhesive film 3 contains an epoxy resin and a phenol resin as a thermosetting resin, an acrylic resin as a thermoplastic resin, and a filler, and the total weight of the epoxy resin, the phenol resin, and the acrylic resin is A parts by weight. When the weight of the filler is B parts by weight, B/(A+B) is preferably 0 or more and 0.7 or less. The above B/(A+B) is more preferably 0 or more and 0.68 or less, and particularly preferably 0 or more and 0.65 or less. If the above B/(A+B) is 0.7 or less, it is easy to cut by a laser of 355 nm.

The die-bonding film 3 laminated on the dicing-mud film 12 is preferably protected by a separator (not shown). The separator has a protective film 3 for practical use The function of the protective material used. Further, the separator can be further used as a support substrate when the adhesive film 3 is transferred to the adhesive layer 2. The separator is peeled off when the workpiece is attached to the die-cut film 3 of the diced-mud film. The separator may also be used: polyethylene terephthalate (PET), polyethylene, polypropylene, or a plastic film surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent. Or paper, etc.

The diced-mud film 12 of the present embodiment is produced, for example, in the following manner. First, the substrate 1 can be formed into a film by a conventionally known film forming method. The film forming method may, for example, be a calendering film method, a casting method in an organic solvent, an expansion extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, or the like.

Then, after applying the adhesive composition solution on the substrate 1 to form a coating film, the coating film is dried under specific conditions (heat-crosslinking if necessary) to form the adhesive layer 2. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions can be carried out, for example, at a drying temperature of 80 ° C to 150 ° C and a drying time of 0.5 minutes to 5 minutes. Further, after the adhesive composition is applied onto the separator to form a coating film, the coating film can be dried by the drying conditions to form the adhesive layer 2. Then, the adhesive layer 2 is attached to the substrate 1 together with the separator. Thereby, the dicing film 11 is produced.

The die-bonding film 3 is produced, for example, in the following manner.

First, a solution of an adhesive composition as a material for forming the diced-mulet film 3 is produced. In the adhesive composition solution, as described above, the above-mentioned adhesive composition or other various additives or the like can be blended.

Then, the coating film is formed by applying the adhesive composition solution to the substrate separator so as to have a specific thickness, and then drying the coating film under specific conditions to form an adhesive layer. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions are carried out, for example, at a drying temperature of 70 ° C to 160 ° C and a drying time of 1 minute to 5 minutes. Further, after the adhesive composition solution is applied onto the separator to form a coating film, the coating film may be dried under the above drying conditions to form an adhesive layer. Then, the adhesive layer is attached to the substrate separator together with the separator.

Then, the separator is peeled off from the dicing film 11 and the adhesive layer, respectively, and the adhesive layer and the adhesive layer are bonded to each other. The bonding can be performed, for example, by crimping. In this case, the laminating temperature is not particularly limited, and is, for example, preferably 30 ° C to 50 ° C, more preferably 35 ° C to 45 ° C. Further, the linear pressure is not particularly limited, and is, for example, preferably 0.1 kgf/cm to 20 kgf/cm, more preferably 1 kgf/cm to 10 kgf/cm. Then, the substrate separator on the adhesive layer was peeled off to obtain a diced-mulet film of the present embodiment.

[Protection adhesive film peeling step]

After the dicing-mulet film attaching step, as shown in FIG. 5, the protective adhesive film 44 is peeled off from the surface 4F of the semiconductor wafer 4 (step E). A conventionally known peeling device can be used for the peeling.

[Met film cutting step]

Then, as shown in FIG. 6, the groove 4S exposed along the die-bonding film 3 is shown. The laser 50 having a wavelength of 355 nm is irradiated, and the crystal film 3 is cut (step E). As a result, the semiconductor wafer 5 with the die-bonded film 3 cut separately can be obtained (refer to FIG. 7). The laser used in the present invention can preferably use the third harmonic (355 nm) of a Yttrium Aluminium Garnet (YAG) laser, which can be used as non-thermal processing without a thermal processing process. Ablation processing is achieved by ultraviolet light absorption. Thereby, thermal damage during laser processing can be reduced. The laser irradiation conditions may be appropriately adjusted within the range of the following conditions.

<Laser illumination conditions>

Laser source YAG laser

Wavelength 355 nm

Oscillation method

Pulse mode type A (pulse width 1 ns to 10000 ns)

Repeat frequency 50 kHz~200 kHz

Average output power 0.5 W~2.0 W

Laser transmission speed 50 mm/s~200 mm/s

Laser focus position, then the surface of the film

Then, in order to peel off the semiconductor wafer 5 which is next fixed to the dicing-mud film 12, the semiconductor wafer 5 is picked up (pickup step). The method of picking up is not particularly limited, and various conventionally known methods can be employed. For example, a method in which each semiconductor wafer 5 is ejected from the side of the dicing-mud film 12 by a needle, and the ejected semiconductor wafer 5 is picked up by a pick-up device.

Then, as shown in FIG. 8, the picked-up semiconductor wafer 5 is temporarily fixed to the adherend 6 via the die-bonding film 3 (fixing step). Examples of the adherend 6 include a lead frame, a Tape-Automated Bonding (TAB) film, a substrate, or a separately fabricated semiconductor wafer. The adherend 6 may be, for example, a deformed adherend that is easily deformed, or a non-deformable adherend (semiconductor wafer or the like) that is difficult to deform.

The above substrate can be used by a person skilled in the art. In addition, the lead frame may be a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame or an organic material including epoxy glass, bismaleimide triazine (BT), polyimine, or the like. Substrate. However, the present invention is not limited thereto, and includes a circuit board that can fix a semiconductor element and be electrically connected to the semiconductor element.

The shearing force at 25 ° C in the temporary fixation of the die-bonding film 3 with respect to the adherend 6 is preferably 0.2 MPa or more, and more preferably 0.2 MPa to 10 MPa. If the shearing force of the adhesive film 3 is at least 0.2 MPa or more, the adhesive film 3 and the semiconductor wafer 5 are bonded or bonded by the ultrasonic vibration or heating in the step at the bonding step. The case where the joint surface of the body 6 is shear-deformed is small. In other words, the ultrasonic wave vibration at the time of wire bonding is small, and the semiconductor element is less fluctuated, thereby preventing the success rate of the wire bonding from being lowered. Further, the shear adhesion force at 175 ° C in the temporary fixation of the die-bonding film 3 with respect to the adherend 6 is preferably 0.01 MPa or more, and more preferably 0.01 MPa to 5 MPa.

Then, bonding of the bonded body 6 by bonding wire 7 is performed. The tip end of the terminal portion (inner lead) is bonded to a bonding wire electrically connected to an electrode pad (not shown) on the semiconductor wafer 5 (wire bonding step). For the above bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding is carried out in the range of 80 ° C to 250 ° C, preferably 80 ° C to 220 ° C. In addition, the heating time is performed for several seconds to several minutes. The bonding is performed by using the vibration energy of the ultrasonic wave and the pressure contact energy by the application of the pressure in a state of being heated in the above-described temperature range. This step can be carried out without performing thermal hardening of the die film 3. Further, in the process of this step, the semiconductor wafer 5 and the adherend 6 are not fixed by the die film 3.

Then, the semiconductor wafer 5 is sealed by the sealing resin 8 (sealing step). This step is performed to protect the semiconductor wafer 5 or the bonding wires 7 mounted on the adherend 6 . This step is carried out by molding a sealing resin with a mold. For the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually carried out at 175 ° C for 60 seconds to 90 seconds, but the present invention is not limited thereto, and for example, it can be cured at 165 ° C to 185 ° C for several minutes. Thereby, the sealing resin is cured, and the semiconductor wafer 5 and the adherend 6 are fixed via the adhesive film 3. That is, in the present invention, even in the case where the post-hardening step to be described later is not performed, fixing can be achieved by the die-bonding film 3 in this step, which contributes to reduction in the number of manufacturing steps and shortening of the semiconductor device. Manufacturing time.

In the post-hardening step, the sealing resin 8 which is insufficiently hardened in the sealing step is completely cured. In the case where the die film 3 is not completely thermally hardened in the sealing step, complete thermal hardening of the die film 3 can be achieved together with the sealing resin 8 in this step. This step The heating temperature in the step varies depending on the type of the sealing resin, and is, for example, in the range of 165 ° C to 185 ° C, and the heating time is about 0.5 to 8 hours.

In the above embodiment, the case where the adhesive film of the present invention is an adhesive film has been described. However, the adhesive film of the present invention is not limited to the die-bonding film, and may be, for example, a film for flip-chip type semiconductor back surface formed on the back surface of a semiconductor element, which is flip-chip bonded to be bonded. On the body. For the film for flip-chip type semiconductor back surface, for example, Japanese Laid-Open Patent Publication No. 2011-151360, Japanese Patent Laid-Open No. 2011-151361, Japanese Patent Laid-Open No. 2011-151362, and Japanese Patent Laid-Open No. 2011-151363 In the Japanese Patent Laid-Open Publication No. 2011-009711, etc., the description herein is omitted.

In the above embodiment, the case where the adhesive film as the adhesive film is laminated on the dicing film has been described. However, the present invention is not limited to this example, and the die-bonding film as the adhesive film may be used alone without laminating the film. At this time, for example, a dicing film can be attached to the die film and used. Further, when the adhesive film of the present invention is a film for flip chip type semiconductor back surface, the film for flip chip type semiconductor back surface may be used singly or laminated on a dicing film.

[Examples]

Hereinafter, preferred embodiments of the invention will be described in detail by way of example. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the invention to these examples unless otherwise specified. In addition, the following is a part by weight.

<Production of dicing film>

A layer (thickness: 80 μm) containing a mixed resin of polypropylene and ethylene-propylene rubber and a layer (thickness: 20 μm) containing linear low-density polyethylene (LLDP) are prepared. Olefin-based multilayer film (thickness 100 μm). Further, in the layer containing LLDP, the surface on the opposite side to the bonding surface is subjected to embossing.

In a reaction vessel equipped with a cooling pipe, a nitrogen gas introduction pipe, a thermometer, and a stirring device, 88.8 parts of 2-ethylhexyl acrylate (hereinafter referred to as "2EHA") and 2-hydroxyethyl acrylate (hereinafter referred to as "HEA") were added. Further, 11.2 parts, 0.2 parts of benzamidine peroxide and 65 parts of toluene were subjected to polymerization treatment at 61 ° C for 6 hours in a nitrogen stream to obtain an acrylic polymer A having a weight average molecular weight of 850,000. The weight average molecular weight is as follows. The molar ratio of 2EHA to HEA was set to 100 mol: 20 mol.

To the acrylic polymer A, 12 parts of 2-methylpropenyloxyethyl isocyanate (hereinafter referred to as "MOI") (80 mol% relative to HEA) was added at 50 ° C in an air stream. The addition reaction treatment was carried out for 48 hours to obtain an acrylic polymer A'.

Then, 8 parts of a polyisocyanate compound (trade name "CORONATE L", Nippon Polyurethane (NIPPON POLYURETHANE)), and a photopolymerization initiator (trade name) were added to 100 parts of the acrylic polymer A'. Five parts of Irgacure 651" and Ciba Specialty Chemicals Co., Ltd. were used to prepare an adhesive solution.

The above-prepared adhesive solution was applied onto the surface of the PET release liner on which the anthrone treatment was carried out, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 10 μm. Then, the non-embossed surface (layer containing the mixed resin) of the olefin-based multilayer film was bonded to the adhesive layer, and stored at 50 ° C for 24 hours. Then, an ultraviolet ray irradiation apparatus (manufactured by Nitto Seiki Co., Ltd., UM-810) was used to irradiate ultraviolet rays of 300 mJ/cm ² from the olefin-based multilayer film side to the region on which the semiconductor wafer was mounted, thereby obtaining a dicing film.

<Following film production>

(Example 1)

The following (a) to (d) were dissolved in methyl ethyl ketone to obtain a solution of a binder composition having a concentration of 23.6% by weight.

(a) an acrylate-based polymer containing ethyl acrylate-methyl methacrylate as a main component (manufactured by K.K., Ltd., trade name: Paracron W-197CM) 100 parts

(b) Epoxy resin (JER (manufacturing), Epikote 1004) 32 parts

(c) Phenolic resin (Mitsui Chemical Co., Ltd., Milex XLC-4L) 34 parts

(d) Spherical cerium oxide (manufactured by Admatechs Co., Ltd., SO-25R) 90 parts

Applying the adhesive composition solution to the oxime release treatment and thickness After 50 μm of a release-treated film (release liner) containing a polyethylene terephthalate film, it was dried at 130 ° C for 2 minutes. Thereby, the adhesive film A of the thickness of 25 μm of Example 1 was obtained.

(Example 2)

The following (a) to (d) were dissolved in methyl ethyl ketone to obtain a solution of a binder composition having a concentration of 23.6% by weight.

(a) an acrylate-based polymer containing ethyl acrylate-methyl methacrylate as a main component (manufactured by K.K., Ltd., trade name: Paracron W-197CM) 100 parts

(b) Epoxy resin (JER (manufacturing), Epikote 1004) 12 parts

(c) Phenolic resin (Mitsui Chemical Co., Ltd., Milex XLC-4L) 13 parts

(d) Spherical cerium oxide (Manufactured by Yade Technology Co., Ltd., SO-25R) 188

This adhesive composition solution was applied onto a release-treated film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm by a ketone release treatment, and then dried at 130 ° C. 2 minute. Thereby, the adhesive film B of the thickness of 25 μm of Example 2 was obtained.

(Example 3)

The following (a) to (d) were dissolved in methyl ethyl ketone to obtain a concentration of 23.6. % by weight of the composition of the adhesive composition.

(a) an acrylate-based polymer containing ethyl acrylate-methyl methacrylate as a main component (manufactured by K.K., Ltd., trade name: Paracron W-197CM) 100 parts

(b) Epoxy resin (JER (manufacturing), Epikote 1004) 21 parts

(c) Phenolic resin (Mitsui Chemical Co., Ltd., Milex XLC-4L) 22 parts

(d) Spherical cerium oxide (Manufactured by Yade Technology Co., Ltd., SO-25R) 77 parts

This adhesive composition solution was applied onto a release-treated film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm by a ketone release treatment, and then dried at 130 ° C. 2 minute. Thereby, the adhesive film C of Example 3 having a thickness of 25 μm was obtained.

(Example 4)

The following (a) to (d) were dissolved in methyl ethyl ketone to obtain a solution of a binder composition having a concentration of 23.6% by weight.

(a) Epoxy group-containing acrylic resin (manufactured by Nagase ChemteX Co., Ltd., trade name: SG-P3) 100 parts

(b) Phenolic resin (Mitsui Chemical Co., Ltd., Milex XLC-4L) 11 parts

(c) Spherical cerium oxide (Manufactured by Yade Technology Co., Ltd., SO-25R) 82 copies

(d) Dyes (Manufactured by Oriental Chemical Industry Co., Ltd., Oil Scarlet 308) 0.6 parts

This adhesive composition solution was applied onto a release-treated film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm by a ketone release treatment, and then dried at 130 ° C. 2 minute. Thereby, the adhesive film D of Example 4 having a thickness of 25 μm was obtained.

(Example 5)

The following (a) to (d) were dissolved in methyl ethyl ketone to obtain a solution of a binder composition having a concentration of 23.6% by weight.

(a) Epoxy group-containing acrylic resin (manufactured by Nagase Chemical Co., Ltd., trade name: SG-P3) 100 parts

(b) Epoxy resin (JER (manufacturing), Epikote 1004) 11 parts

(c) Phenolic resin (Mitsui Chemical Co., Ltd., Milex XLC-4L) 14 parts

(d) Dyes (Manufactured by Oriental Chemical Industry Co., Ltd., Oil Scarlet 308) 0.6 parts

This adhesive composition solution was applied onto a release-treated film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm by a ketone release treatment, and then dried at 130 ° C. 2 minute. Thereby, the thickness of 25 μm of the embodiment 5 is obtained. Film E.

(Example 6)

The following (a) to (d) were dissolved in methyl ethyl ketone to obtain a solution of a binder composition having a concentration of 23.6% by weight.

(a) Epoxy group-containing acrylic resin (manufactured by Nagase Chemical Co., Ltd., trade name: SG-P3) 100 parts

(b) Epoxy resin (JER (manufacturing), Epikote 1004) 11 parts

(c) Phenolic resin (Mitsui Chemical Co., Ltd., Milex XLC-4L) 14 parts

(d) Dyes (Oriental Chemical Industry Co., Ltd., Oil Black HBB) 0.6 parts

This adhesive composition solution was applied onto a release-treated film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm by a ketone release treatment, and then dried at 130 ° C. 2 minute. Thereby, the adhesive film F of the thickness of 25 μm of Example 6 was obtained.

(Example 7)

The following (a) to (e) were dissolved in methyl ethyl ketone to obtain a solution of a binder composition having a concentration of 23.6% by weight.

(a) Acrylate-based polymer containing ethyl acrylate-methyl methacrylate as a main component (manufactured by K.K., Ltd., trade name: Paracron W-197CM) 100 copies

(b) Epoxy resin 1 (manufactured by JER (Equipment), Epikote 1004) 102 parts

(c) Epoxy resin 2 (manufactured by JER (Equipment), Epikote 827) 13 parts

(d) phenol resin (Mitsui Chemical Co., Ltd., Milex XLC-4L) 119

(e) Spherical cerium oxide (Manufactured by Yade Technology Co., Ltd., SO-25R) 370

This adhesive composition solution was applied onto a release-treated film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm by a ketone release treatment, and then dried at 130 ° C. 2 minute. Thereby, the adhesive film G of the thickness of 25 μm of Example 7 was obtained.

(Comparative Example 1)

The following (a) to (d) were dissolved in methyl ethyl ketone to obtain a solution of a binder composition having a concentration of 23.6% by weight.

(a) an acrylate-based polymer containing ethyl acrylate-methyl methacrylate as a main component (manufactured by K.K., Ltd., trade name: Paracron W-197CM) 100 parts

(b) Epoxy resin (JER (manufacturing), Epikote 1004) 5 parts

(c) Phenolic resin (Mitsui Chemical Co., Ltd., Milex XLC-4L) 6 parts

(d) Spherical cerium oxide (Manufactured by Yade Technology Co., Ltd., SO-25R) 167

This adhesive composition solution was applied onto a release-treated film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm by a ketone release treatment, and then dried at 130 ° C. 2 minute. Thereby, the adhesive film H of the thickness of 25 micrometer of the comparative example 1 was obtained.

(Comparative Example 2)

The following (a) to (e) were dissolved in methyl ethyl ketone to obtain a solution of a binder composition having a concentration of 23.6% by weight.

(a) an acrylate-based polymer containing ethyl acrylate-methyl methacrylate as a main component (manufactured by K.K., Ltd., trade name: Paracron W-197CM) 100 parts

(b) Epoxy resin (JER (manufacturing), Epikote 1004) 12 parts

(c) Phenolic resin (Mitsui Chemical Co., Ltd., Milex XLC-4L) 13 parts

(d) Spherical cerium oxide (Manufactured by Yade Technology Co., Ltd., SO-25R) 375

(e) Dyestuff (Manufactured by Oriental Chemical Industry Co., Ltd., Oil Scarlet 308) 0.3 parts

This adhesive composition solution was applied onto a release-treated film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm by a ketone release treatment, and then dried at 130 ° C. 2 minute. Thus, the adhesive film I having a thickness of 25 μm of Comparative Example 2 was obtained.

(Comparative Example 3)

The following (a) to (e) were dissolved in methyl ethyl ketone to obtain a solution of a binder composition having a concentration of 23.6% by weight.

(a) an acrylate-based polymer containing ethyl acrylate-methyl methacrylate as a main component (manufactured by K.K., Ltd., trade name: Paracron W-197CM) 100 parts

(b) Epoxy resin 1 (manufactured by JER (Equipment), Epikote 1004) 135 parts

(c) Epoxy Resin 2 (JER (manufactured by the stock), Epikote 827) 144 copies

(d) phenol resin (Mitsui Chemical Co., Ltd., Milex XLC-4L) 288

(e) Spherical cerium oxide (Manufactured by Yade Technology Co., Ltd., SO-25R) 445

This adhesive composition solution was applied onto a release-treated film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm by a ketone release treatment, and then dried at 130 ° C. 2 minute. Thereby, the thickness of 25 μm of Comparative Example 3 was obtained. Film J.

(Measurement of the absorption coefficient at a wavelength of 355 nm)

The adhesive films of the examples and the comparative examples were laminated in four layers to have a thickness of 100 μm. It was mounted on a jig, and the transmittance T% and the reflectance R% of the laser light having a wavelength of 355 nm were measured using an ultraviolet-visible spectrophotometer UV-2550 (manufactured by Shimadzu ZU). A performs the calculation. The results are shown in Table 1 below.

<Formula A>T'=T/(100-R)×100

Absorbance coefficient [cm ^-1 ] = LN (1/T') / (thick film thickness [cm])

(Measurement of tensile storage elastic modulus at 50 ° C and tensile storage elastic modulus at 120 ° C)

The adhesive films of the examples and the comparative examples were laminated and cut so as to have a strip shape measuring piece having a thickness of 200 μm, a length of 25 mm (measured length), and a width of 10 mm. Then, the tensile storage elastic modulus at -50 ° C to 300 ° C was measured using a fixed viscoelasticity measuring apparatus (RSA-III, Rheometric Scientific). The measurement conditions were set to a frequency of 1 Hz and a temperature increase rate of 10 ° C/min. The measured value at 50 ° C at this time and the measured value at 120 ° C are shown in Table 1.

(Measurement of melt viscosity at 120 ° C)

For the adhesive films of the examples and the comparative examples, a rheometer (Huck) was used. (HAAKE), manufactured by the company, trade name: RS-1), the melt viscosity at 120 ° C was measured by the parallel plate method. Specifically, 0.1 g of the adhesive film was placed on a plate heated to 120 ° C, and measurement was started. The average value of the value after 240 seconds from the start of the measurement was taken as the melt viscosity. In addition, the gap between the plates is set to 0.1 mm. The results are shown in Table 1.

(Shard generation and evaluation of laser processability)

<Production of sample>

The adhesive film A to the film J of the examples and the comparative examples were punched into a circular shape. The punching is performed in such a manner as to be wider than the portion of the above-described dicing film which is irradiated with ultraviolet rays. Then, the punched back film A was attached so as to cover the portion of the cut film thus formed which was irradiated with ultraviolet rays, and Sample A of Example 1 was obtained. Similarly, the punched film B to the film J was attached so as to cover the portion of the cut film thus formed which was irradiated with ultraviolet rays, and the sample of Example 2 and the sample of Example 3 were obtained. C, Sample D of Example 4, Sample E of Example 5, Sample F of Example 6, Sample G of Comparative Example 1, Sample H of Comparative Example 1, Sample I of Comparative Example 2, and Sample J of Comparative Example 3 .

<evaluation>

A groove having a depth of 100 μm and a width of 30 μm was formed on the surface of the semiconductor wafer (thickness 740 μm) by blade dicing. The groove was formed in a checkered shape so that the obtained wafer was 10 mm in length × 10 mm in width. Then, a protective adhesive film is attached to the surface of the grooved semiconductor wafer. The protective adhesive film is a polyolefin sheet having a thickness of 150 μm. Further, as the adhesive layer of the above-mentioned protective adhesive film, It is used to reduce the adhesion by irradiating ultraviolet rays.

Then, the semiconductor wafer was back-grinded to a thickness of 50 μm to obtain a semiconductor wafer exposed by the trench. That is, each semiconductor wafer having a size of 50 μm in thickness, 10 mm in length × 10 mm in width was obtained. Then, the adhesive film of the samples of the examples and the comparative examples was attached to the back surface of the semiconductor wafer exposed on the groove surface at 60 ° C, and the protective adhesive film was peeled off from the back surface of the semiconductor wafer.

Then, along the groove exposed from the film surface, a laser having a wavelength of 355 nm was irradiated from the side opposite to the dicing film, and the film was cut. The irradiation conditions and devices of the laser are as follows.

<Laser irradiation conditions and devices>

Device DISCO-7160 manufactured by DISCO

Laser source YAG laser

Wavelength 355 nm

Oscillation method

Pulse mode type A

Spot diameter 10 μm

Repeat frequency 100 kHz

Average output power 1.0 W

Laser transmission speed 100 mm/s

Laser focus position, then the surface of the film

After the film is cut by laser cutting, picking is performed. Connected by laser In the film cutting, the semiconductor wafer attached to the adhesive film by the pick-up step was set to ○, and the case where the pickup could not be picked up was set to ×, and the laser processability was evaluated. The results are shown in Table 1.

Further, after the film was cut by laser cutting, it was evaluated whether or not the chips entered the inside from the end of the semiconductor wafer to 30 μm or more. The case where the chips were not entered into the inner side of the semiconductor wafer to 30 μm or more was set to ○, and the case where the chips entered the inner side of the semiconductor wafer to 30 μm or more was set to ×, and the occurrence of debris was evaluated. The results are shown in Table 1.

(result)

In the samples of the examples, good results were obtained in the evaluation of the generation of the chips and the evaluation of the laser processability. On the other hand, in the sample of Comparative Example 1, since the absorption coefficient of the adhesive film was small, the laser could not be absorbed and was not properly ablated. Further, in the sample of Comparative Example 2, since the tensile storage elastic modulus at 50 ° C was low and the amount of filler was large, laser processing was not properly performed. Although the sample of Comparative Example 3 was ablated, since the melt viscosity was low, a large amount of chips were generated and re-welded in the gap between the wafers.

1‧‧‧Substrate

2‧‧‧Adhesive layer

3‧‧‧Met film

4‧‧‧Semiconductor wafer

4F‧‧‧ surface

4R‧‧‧Back

4S‧‧‧ slot

11‧‧‧Cleaning film

50‧‧‧Laser

Claims (8)

A method of manufacturing a semiconductor device, comprising: step A, forming a trench having a back surface on a surface of a semiconductor wafer; and step B, attaching a protective adhesive film to a surface of the semiconductor wafer on which the trench is formed Step C, performing back grinding of the semiconductor wafer to expose the groove from the back surface; in step D, after the step C, attaching an adhesive film to the back surface of the semiconductor wafer; and step E, after the step D And peeling off the protective adhesive film; and in step F, after the step E, irradiating the laser having a wavelength of 355 nm along the groove exposed by the adhesive film surface, and cutting the adhesive film, the adhesive film: (a The absorption coefficient at a wavelength of 355 nm is 40 cm ^-1 or more, and (b) the tensile storage elastic modulus at 50 ° C is 0.5 MPa or more and 20 MPa or less, and (c) the tensile storage elastic modulus at 120 ° C The melt viscosity is 0.3 MPa or more, 7 MPa or less, or 120 ° C. The melt viscosity is 2000 Pa. s above. The method of manufacturing a semiconductor device according to claim 1, wherein the adhesive film is a die-bonding film, and the step D is a step of attaching the die-bonding film to the back surface of the semiconductor wafer after the step C . The method of manufacturing a semiconductor device according to claim 2, wherein the die-bonding film is laminated on the dicing film. The method of manufacturing a semiconductor device according to claim 1, wherein the adhesive film is a film for flip chip type semiconductor back surface formed on a back surface of a semiconductor element, and the semiconductor element is flip-chip bonded In the adherend, the step D is a step of attaching the film for flip chip type semiconductor back surface to the back surface of the semiconductor wafer after the step C. The method of manufacturing a semiconductor device according to claim 4, wherein the film for a flip chip type semiconductor back surface is laminated on the dicing film. The method for producing a semiconductor device according to any one of the first to fifth aspect, wherein the adhesive film comprises an epoxy resin and a phenol resin as a thermosetting resin, and an acrylic resin as a thermoplastic resin. In addition, when the total weight of the epoxy resin, the phenol resin, and the acrylic resin is A parts by weight, and the weight of the filler is B parts by weight, B/(A+B) is 0 or more and 0.7 or less. An adhesive film for use in a method of manufacturing a semiconductor device according to any one of claims 1 to 5, characterized in that: (a) an absorption coefficient at a wavelength of 355 nm is 40 cm ^-1 or more (b) The tensile storage elastic modulus at 50 ° C is 0.5 MPa or more and 20 MPa or less; and (c) The tensile storage elastic modulus at 120 ° C is 0.3 MPa or more, 7 MPa or less, or 120 ° C. The melt viscosity is 2000 Pa. s above. The adhesive film according to claim 7, comprising an epoxy resin, a phenol resin as a thermosetting resin, an acrylic resin as a thermoplastic resin, and a filler, and an epoxy resin, a phenol resin, and an acrylic resin. When the total weight of the resin is A parts by weight and the weight of the filler is B parts by weight, B/(A+B) is 0 or more and 0.7 or less.