TW201335116A - Amine-based compound and organic light-emitting diode including the same - Google Patents
Amine-based compound and organic light-emitting diode including the same Download PDFInfo
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Abstract
Description
相關申請案之交互參照 Cross-references to related applications
本申請案主張2012年2月07日向韓國智慧財產局提出之案號為10-2012-0012532及2012年6月08日向韓國智慧財產局提出之案號為10-2012-0061676之韓國申請案之權益,其全部內容藉參照整合於此。 This application claims the Korean application filed on December 07, 2012 from the Korea Intellectual Property Office with the case number 10-2012-0012532 and June 08, 2012 to the Korea Intellectual Property Office with the case number 10-2012-0061676. Equity, the entire contents of which are incorporated herein by reference.
本實施例係關於一種用於有機發光二極體之化合物及包含該化合物之有機發光二極體。 This embodiment relates to a compound for an organic light-emitting diode and an organic light-emitting diode comprising the same.
有機發光二極體(OLEDs)為具有例如廣視角、良好對比、反應快速、高亮度、良好驅動電壓之優點之自發光二極體,且可提供彩色影像。 Organic light-emitting diodes (OLEDs) are self-luminous diodes having advantages such as wide viewing angle, good contrast, fast response, high brightness, and good driving voltage, and can provide color images.
傳統的有機發光二極體包含具有基板之結構,且陽極、電洞傳輸層(HTL)、發光層(EML)、電子傳輸層(ETL)及陰極依序堆疊於基板上。關於此點,電洞傳輸層、發光層及電子傳輸 層為包含有機化合物之有機薄膜。 A conventional organic light-emitting diode includes a structure having a substrate, and an anode, a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and a cathode are sequentially stacked on the substrate. In this regard, the hole transport layer, the light-emitting layer and the electron transport The layer is an organic film containing an organic compound.
具有上述結構之有機發光二極體之操作原則如下。 The principle of operation of the organic light-emitting diode having the above structure is as follows.
當電壓施加於陽極與陰極間時,自陽極注入之電洞經由電洞傳輸層移至發光層,而自陰極注入之電子經由電子傳輸層移至發光層。電洞與電子於發光層中再結合以產生激子。當激子自激發態落回基態時發出光線。 When a voltage is applied between the anode and the cathode, the hole injected from the anode moves to the light-emitting layer via the hole transport layer, and the electron injected from the cathode moves to the light-emitting layer via the electron transport layer. The holes are recombined with electrons in the luminescent layer to generate excitons. When the excitons fall back from the excited state to the ground state, they emit light.
本發明實施例提供一種具有新型結構之胺系化合物,及包含該胺系化合物之有機發光二極體。 Embodiments of the present invention provide an amine-based compound having a novel structure, and an organic light-emitting diode comprising the amine-based compound.
根據本發明之一態樣提供由以下化學式1表示之胺系化合物:
其中,於化學式1中,Ar1與Ar2各獨立地為經取代或未經取代之C6-C60芳基或經取代或未經取代之C2-C60雜芳基;X1為經取代或未經取代之C6-C60伸芳基或經取代或未經取代之C2-C60伸雜芳基;m為1至5之整數;且各經取代之C6-C60芳基、 經取代之C2-C60雜芳基、經取代之C6-C60伸芳基與經取代之C2-C60伸雜芳基的至少一取代基為氘原子;-F;-Cl;-Br;-I;-CN;羥基;-NO2;氨基;甲脒基;胼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;三(C6-C60芳基)矽烷基;C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽或磷酸基或其鹽的至少之一取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、及C2-C60炔基;C3-C60環烷基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基、C6-C60芳硫基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個氟(F)取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C3-C60環烷基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基及C6-C60芳硫基的其中之一,其中Ar1與Ar2的至少之一為經選自由-F;-CN;-NO2;經至少一個-F取代之C1-C60烷基;C2-C60雜芳基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個-F取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C2-C60雜芳基組成之群組的至少一拉電子基取代之C6-C60芳基。 Wherein, in Chemical Formula 1, Ar 1 and Ar 2 are each independently a substituted or unsubstituted C 6 -C 60 aryl group or a substituted or unsubstituted C 2 -C 60 heteroaryl group; X 1 is Substituted or unsubstituted C 6 -C 60 extended aryl or substituted or unsubstituted C 2 -C 60 heteroaryl; m is an integer from 1 to 5; and each substituted C 6 -C a 60 aryl group, a substituted C 2 -C 60 heteroaryl group, a substituted C 6 -C 60 extended aryl group and at least one substituent of the substituted C 2 -C 60 heteroaryl group are a halogen atom; F; -Cl; -Br; -I; -CN; hydroxy; -NO 2 ; amino group; formazan; hydrazine; hydrazine; carboxyl group or a salt thereof; sulfonic acid group or a salt thereof; C 6 -C 60 aryl)decyl; C 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl; fluorene atom, -F At least one of -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, methionyl, anthracene, fluorene, carboxy or a salt thereof, a sulfonic acid group or a salt thereof or a phosphate group or a salt thereof Substituted C 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, and C 2 -C 60 alkynyl; C 3 -C 60 cycloalkyl, C 3 -C 60 cycloalkenyl, C 6 -C 60 aryl , C 2 -C 60 heteroaryl, C 6 -C 60 aralkyl, C 6 -C 60 aryloxy group, C 6 -C 60 aryl group; deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, formamidine, hydrazine, hydrazine, carboxyl or a salt thereof, sulfonic acid group or salt thereof, phosphate group or salt thereof, C 1 -C 60 alkyl group, at least a fluorine (F) substituted C 1 -C 60 alkyl group, a C 1 -C 60 alkoxy group, a C 2 -C 60 alkenyl group, a C 2 -C 60 alkynyl group, a C 6 -C 60 aryl group and a C 2 group at least one of the substituted C 3 -C 60 cycloalkyl group -C 60 heteroaryl, C 3 -C 60 cycloalkenyl, C 6 -C 60 aryl group, C2-C 60 heteroaryl, C 6 -C One of 60 aralkyl, C 6 -C 60 aryloxy and C 6 -C 60 arylthio, wherein at least one of Ar 1 and Ar 2 is selected from -F; -CN; -NO 2 a C 1 -C 60 alkyl group substituted with at least one -F; a C 2 -C 60 heteroaryl group; and a ruthenium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, formamidine, hydrazine, hydrazine, carboxyl or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a C 1 -C 60 alkyl group, a C 1 -C 60 alkane substituted with at least one -F group, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, C 6 -C 60 Group and C 2 -C 60 heteroaryl groups substituted with at least one of C 2 -C 60 heteroaryl group consisting of at least one electron withdrawing substituent of C 6 -C 60 aryl group.
根據本發明之另一態樣,提供有機發光二極體包含第一電極、相對於第一電極設置之第二電極、及設置於第一電極 與第二電極間之有機層,該有機層包含至少一種胺系化合物。 According to another aspect of the present invention, an organic light emitting diode includes a first electrode, a second electrode disposed relative to the first electrode, and a first electrode disposed An organic layer between the second electrode and the second electrode, the organic layer comprising at least one amine compound.
10‧‧‧有機發光二極體 10‧‧‧Organic Luminescent Diodes
11‧‧‧基板 11‧‧‧Substrate
13‧‧‧第一電極 13‧‧‧First electrode
15‧‧‧有機層 15‧‧‧Organic layer
17‧‧‧第二電極 17‧‧‧second electrode
藉參照附圖詳細描述例示性實施例,本發明之以上及其他特徵及優點將變得顯而易知,其中:第1圖為描繪根據一實施例之有機發光二極體的結構之示意圖。 The above and other features and advantages of the present invention will become more apparent from the detailed description of the embodiments illustrated in the accompanying drawings in which: FIG. 1 is a schematic diagram depicting the structure of an organic light emitting diode according to an embodiment.
如用於本文中,用詞「和/或」包含一或多個相關表列元件之任何或全部組合。當例如「至少之一」之表述詞前綴於一列元件時,係修飾整列元件而非修飾該列中之個別元件。 As used herein, the <RTI ID=0.0>"and/or" </ RTI> includes any or all combinations of one or more of the associated list elements. When a phrase such as "at least one of" is recited in a list of elements, the <RTIgt;
根據本發明之一態樣,提供由化學式1表示之胺系化合物:
於化學式1中,Ar1與Ar2各獨立地為經取代或未經取代之C6-C60芳基或經取代或未經取代之C3-C60雜芳基;且X1 為經取代或未經取代之C6-C60伸芳基或經取代或未經取代之C2-C60伸雜芳基,且m為1至5之整數。 In Chemical Formula 1, Ar 1 and Ar 2 are each independently a substituted or unsubstituted C 6 -C 60 aryl group or a substituted or unsubstituted C 3 -C 60 heteroaryl group; and X 1 is a Substituted or unsubstituted C 6 -C 60 extended aryl or substituted or unsubstituted C 2 -C 60 heteroaryl, and m is an integer from 1 to 5.
各經取代之C6-C60芳基、經取代之C2-C60雜芳基、 經取代之C6-C60伸芳基與經取代之C2-C60伸雜芳基的至少一取代基可為氘原子;-F;-Cl;-Br;-I;-CN;羥基;-NO2;氨基;甲脒基;胼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;三(C6-C60芳基)矽烷基;C1-C60烷基、C1-C60烷氧基、C2-C60烯基與C2-C60炔基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽或磷酸基或其鹽的至少之一取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基與C2-C60炔基;C3-C60環烷基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基、C6-C60芳硫基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個氟(F)取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C3-C60環烷基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基與C6-C60芳硫基的其中之一。 Each substituted C 6 -C 60 aryl, substituted C 2 -C 60 heteroaryl, substituted C 6 -C 60 extended aryl and substituted C 2 -C 60 heteroaryl a substituent may be a halogen atom; -F; -Cl; -Br; -I; -CN; a hydroxyl group; -NO 2 ; an amino group; a formazan group; an anthracene; an anthracene; a carboxyl group or a salt thereof; ; phosphate group or its salt; tris(C 6 -C 60 aryl)decylalkyl; C 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl and C 2 -C 60 Alkynyl; through a halogen atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, methionyl, anthracene, fluorene, carboxy or a salt thereof, a sulfonic acid group or a salt thereof or a C 1 -C 60 alkyl group, a C 1 -C 60 alkoxy group, a C 2 -C 60 alkenyl group and a C 2 -C 60 alkynyl group substituted with at least one of a phosphate group or a salt thereof; a C 3 -C 60 ring Alkyl, C 3 -C 60 cycloalkenyl, C 6 -C 60 aryl, C 2 -C 60 heteroaryl, C 6 -C 60 aralkyl, C 6 -C 60 aryloxy, C 6 - C 60 arylthio; through a ruthenium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, methionyl, anthracene, fluorene, carboxy or a salt thereof, sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, C 1 -C 60 alkyl, with at least one (F) of the substituted C 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, C 6 -C 60 aryl group and C 2 -C at least one of substituents C 60 heteroaryl group 3 -C 60 cycloalkyl, C 3 -C 60 cycloalkenyl, C 6 -C 60 aryl, C 2 -C 60 heteroaryl, C 6 -C 60 One of an aralkyl group, a C 6 -C 60 aryloxy group and a C 6 -C 60 arylthio group.
於以上化學式1中,Ar1與Ar2的至少之一為經選自 由-F;-CN;-NO2;經至少一個-F取代之C1-C60烷基;C2-C60雜芳基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個-F取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C2-C60雜芳基組成之群組的至少一拉電子基取代之 C6-C60芳基。 In the above Chemical Formula 1, at least one of Ar 1 and Ar 2 is a C 1 -C 60 alkyl group selected from -F; -CN; -NO 2 ; substituted with at least one -F; C 2 -C 60 hetero Aryl; and ruthenium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, formamidine, oxime, oxime, carboxyl or a salt thereof, sulfonic acid group or salt thereof a phosphate group or a salt thereof, a C 1 -C 60 alkyl group, a C 1 -C 60 alkyl group substituted with at least one -F, a C 1 -C 60 alkoxy group, a C 2 -C 60 alkenyl group, a C 2 - C 60 alkynyl group, at least one C 6 -C 60 aryl group and C 2 -C 60 heteroaryl group substituted with aryl of C 2 -C 60 heteroaryl group consisting of at least one electron withdrawing substituent of C 6 - C 60 aryl.
舉例而言,至少一拉電子基可選自由:-F;-CN; -NO2;經至少一個-F取代之C1-C20烷基;包含環形成N原子(ring-forming N atom)之C2-C20雜芳基;及包含環形成N原子並經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、C6-C20芳基與C2-C20雜芳基的至少之一取代之C2-C20雜芳基所組成之群組。 For example, at least one of the electron withdrawing groups may be selected from: -F; -CN; -NO 2 ; a C 1 -C 20 alkyl group substituted with at least one -F; and a ring-forming N atom a C 2 -C 20 heteroaryl; and a ring comprising a N atom and a ruthenium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, methionyl, oxime, Anthracene, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a C 1 -C 20 alkyl group, a C 1 -C 20 alkyl group substituted with at least one -F, a C 1 -C 20 alkoxy group the group consisting of the group, at least one C 6 -C 20 aryl and C 2 -C 20 heteroaryl group substituted with aryl of C 2 -C 20 heteroaryl group.
於一些實施例中,化學式1中之至少一拉電子基可 選自由-F;-CN;經至少一個-F取代之C1-C20烷基;吡咯基(pyrrolyl group)、吡唑基(pyrazolyl group)、咪唑基(imidazolyl group)、咪唑啉基(imidazolinyl group)、咪唑吡啶基(imidazopyridinyl group)、咪唑嘧啶基(imidazopyrimidinyl group)、吡啶基(pyridinyl group)、吡嗪基(pyrazinyl group)、嘧啶基(pyrimidinyl group)、苯並咪唑基(benzoimidazolyl group)、吲哚基(indolyl group)、嘌呤基(purinyl group)、喹啉基(quinolinyl group)、異喹啉基(isoquinolinyl group)、酞嗪基(phthalazinyl group)、吲哚嗪基(indolizinyl group)、喹唑啉基(quinazolinyl group)、噌啉基(cinnolinyl group)、吲唑基(indazolyl group)、咔唑基(carbazolyl group)、吩嗪基(phenazinyl group)、菲啶基(phenanthridinyl group)、三嗪基(triazinyl group)、噠嗪基(pyridazinyl group)、三唑基(triazolyl group)及四唑基(tetrazolyl group)及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷 氧基、苯基、萘基、蒽基、菲基(phenanthrenyl group)、芘基(pyrenyl group)、吡啶基、三嗪基與咔唑基的至少之一取代之吡咯基、吡唑基、咪唑基、咪唑啉基、咪唑吡啶基、咪唑嘧啶基、吡啶基、吡嗪基、嘧啶基、苯並咪唑基、吲哚基、嘌呤基、喹啉基、異喹啉基、呔嗪基、吲哚嗪基、喹唑啉基、噌啉基、吲唑基、咔唑基、吩嗪基、菲啶基、三嗪基、噠嗪基、三唑基及四唑基組成之群組。 In some embodiments, at least one of the electron withdrawing groups in Chemical Formula 1 may be selected from -F; -CN; a C 1 -C 20 alkyl group substituted with at least one -F; a pyrrolyl group, a pyrazolyl group ( Pyrazolyl group), imidazolyl group, imidazolinyl group, imidazopyridinyl group, imidazopyrimidinyl group, pyridinyl group, pyrazinyl group, Pyrimidinyl group, benzoimidazolyl group, indolyl group, purinyl group, quinolinyl group, isoquinolinyl group, pyridazine (phthalazinyl group), indolizinyl group, quinazolinyl group, cinnolinyl group, indazolyl group, carazolyl group, phenazine Phenazinyl group, phenanthridinyl group, triazinyl group, pyridazinyl group, triazolyl group and tetrazolyl group, and ruthenium atoms, -F, -Cl, -Br, -I, -CN , a hydroxyl group, a -NO 2 , an amino group, a decyl group, an anthracene, an anthracene group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a C 1 -C 20 alkyl group, substituted by at least one -F C 1 -C 20 alkyl, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthrenyl group, pyrenyl group, pyridyl, triazinyl and carbazolyl At least one substituted pyrrolyl, pyrazolyl, imidazolyl, imidazolinyl, imidazolidinyl, imidazopyridyl, pyridyl, pyrazinyl, pyrimidinyl, benzimidazolyl, fluorenyl, fluorenyl, Quinolinyl, isoquinolyl, pyridazinyl, pyridazinyl, quinazolinyl, porphyrinyl, oxazolyl, oxazolyl, phenazinyl, phenanthryl, triazinyl, pyridazinyl a group consisting of triazolyl and tetrazolyl.
舉例而言,化學式1中之至少一拉電子基可選自由: F;-CN;經至少一個-F取代之C1-C20烷基;吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基組成之群組,但不限於此。 For example, at least one of the electron withdrawing groups in Chemical Formula 1 may be selected from: F; -CN; a C 1 -C 20 alkyl group substituted with at least one -F; pyridyl, pyrazinyl, pyrimidinyl, quinolyl , isoquinolinyl, quinazolinyl, triazinyl, benzimidazolyl; and ruthenium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, formamidine a base, an anthracene, an anthracene, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a C 1 -C 20 alkyl group, a C 1 -C 20 alkyl group substituted with at least one -F, C 1 - Pyridyl, pyrazinyl, pyrimidinyl, quinolinyl substituted with at least one of C20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthryl, anthryl, pyridyl, triazinyl and oxazolyl A group consisting of isoquinolyl, quinazolinyl, triazinyl, benzimidazolyl and oxazolyl, but is not limited thereto.
於一些實施例中,以上化學式1中之至少一拉電子
基可選自由-F;-CN;-CH2F;-CHF2;-CF3;與由以下化學式2(1)至化學式2(14)表示之基團所組成之群組:
於以上化學式2(1)至化學式2(14)中,Z11至Z18可 各獨立地為氫原子、氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基或咔唑基。 In the above Chemical Formula 2 (1) to Chemical Formula 2 (14), Z 11 to Z 18 may each independently be a hydrogen atom, a halogen atom, -F, -Cl, -Br, -I, -CN, a hydroxyl group, -NO 2 , an amino group, a mercapto group, an anthracene, an anthracene, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C 1 -C 20 alkyl group, a C 1 -C 20 substituted with at least one -F Alkyl, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthryl, anthracenyl, pyridyl, triazinyl or oxazolyl.
舉例而言,以上化學式2(1)至化學式2(14)中之Z11 至Z18可各獨立地為氫原子、氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、甲基、乙基、丙基、丁基、戊基、甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基或咔唑基,但不限於此,*表示鍵結位置。 For example, Z 11 to Z 18 in the above Chemical Formula 2 (1) to Chemical Formula 2 (14) may each independently be a hydrogen atom, a halogen atom, -F, -Cl, -Br, -I, -CN, a hydroxyl group. , -NO 2 , amino, carbenyl, anthracene, anthracene, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a methoxy group , ethoxy, propoxy, butoxy, pentyloxy, phenyl, naphthyl, anthracenyl, phenanthryl, anthracenyl, pyridyl, triazinyl or oxazolyl, but are not limited thereto, * Indicates the bond position.
於以上化學式1中,Ar1與Ar2的至少之一可為經至 少兩個拉電子基取代之C6-C60芳基。 In the above Chemical Formula 1, at least one of Ar 1 and Ar 2 may be a C 6 -C 60 aryl group substituted with at least two electron withdrawing groups.
於一些實施例中,Ar1與Ar2的至少之一可為經至少 兩個拉電子基取代之苯基、聯苯基、萘基、蒽基、菲基、芘基或茀基(fluorenyl group)。拉電子基可各獨立地選自由吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、苯並咪唑基及咔唑基組成之群組。 In some embodiments, at least one of Ar 1 and Ar 2 may be a phenyl, biphenyl, naphthyl, anthryl, phenanthryl, anthryl or fluorenyl group substituted with at least two electron withdrawing groups. ). The electron withdrawing groups may each independently be selected from the group consisting of pyridyl, pyrazinyl, pyrimidinyl, quinolyl, isoquinolyl, quinazolinyl, triazinyl, benzimidazolyl and oxazolyl; -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, methionyl, anthracene, fluorene, carboxy or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, C 1 -C 20 alkyl, C 1 -C 20 alkyl substituted with at least one -F, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthryl, anthracenyl, pyridyl, three a pyridyl group, a pyrazinyl group, a pyrimidinyl group, a quinolyl group, an isoquinolyl group, a quinazolinyl group, a pyridazinyl group, a benzimidazolyl group, and an oxazolyl group substituted with at least one of a pyridyl group and a carbazolyl group. Group.
以上化學式1之胺系化合物中的Ar1與Ar2的至少
之一為經至少一個以上之拉電子基取代之C6-C60芳基。據此,胺系化合物可由以下化學式1(1)或化學式1(2)表示:
於以上化學式1(1)中,Ar2為經取代或未經取代之 C6-C20芳基或經取代或未經取代之C2-C20雜芳基。於以上化學式1(1)與化學式1(2)中,A環與B環各獨立地為經取代之C6-C20芳基;R1與R2各獨立地為選自由:-F;-CN;-NO2;經至少一個-F取代之C1-C60烷基;C2-C60雜芳基;及經氘原子、-F、-Cl、-Br、-I-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個-F取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C2-C60雜芳基組成之群組之拉電子基;且p與q各獨立地為1至9之整數。 In the above Chemical Formula 1 (1), Ar 2 is a substituted or unsubstituted C 6 -C 20 aryl group or a substituted or unsubstituted C 2 -C 20 heteroaryl group. In the above Chemical Formula 1 (1) and Chemical Formula 1 (2), the A ring and the B ring are each independently a substituted C 6 -C 20 aryl group; R 1 and R 2 are each independently selected from: -F; -CN; -NO 2 ; a C 1 -C 60 alkyl group substituted with at least one -F; a C 2 -C 60 heteroaryl group; and a ruthenium atom, -F, -Cl, -Br, -I-CN, a hydroxyl group, -NO 2 , an amino group, a decyl group, an anthracene, an anthracene group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a C 1 -C 60 alkyl group, a C substituted with at least one -F At least 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, C 6 -C 60 aryl and C 2 -C 60 heteroaryl One of the substituted electron groups of the C 2 -C 60 heteroaryl group; and p and q are each independently an integer from 1 to 9.
化學式1(1)至化學式1(2)中之拉電子基如上所述, 因此其詳細之描述於此將不再重複。 The electron withdrawing groups in Chemical Formula 1(1) to Chemical Formula 1(2) are as described above, Therefore, the detailed description thereof will not be repeated here.
舉例而言,胺系化合物可由以上化學式1(1)表示, 其中化學式1(1)中p數量個R1中的至少之一可為-CN。 For example, the amine compound may be represented by the above Chemical Formula 1 (1), wherein at least one of the number of p and R 1 in the chemical formula 1 (1) may be -CN.
於一些實施例中,胺系化合物可由以上化學式1(2) 表示,其中化學式1(2)中p數量個R1與q數量個R2中的至少之一可為-CN。 In some embodiments, the amine compound may be represented by the above Chemical Formula 1 (2), wherein at least one of the number of p and the number of R 2 and R 2 in the chemical formula 1 (2) may be -CN.
於一些實施例中,胺系化合物可由以上化學式1(1) 表示,其中化學式1(1)中之A環可為經取代之苯基、經取代之聯苯基、經取代之萘基、經取代之蒽基、經取代之菲基、經取代之芘基或經取代之茀基,但不限於此。 In some embodiments, the amine compound can be from the above formula 1 (1) It is represented that the ring A in the formula 1 (1) may be a substituted phenyl group, a substituted biphenyl group, a substituted naphthyl group, a substituted indenyl group, a substituted phenanthryl group, a substituted fluorenyl group. Or substituted sulfhydryl, but is not limited to this.
於一些實施例中,胺系化合物可由以上化學式1(2) 表示,其中化學式1(2)中之A環與B環可各獨立地為經取代之苯基、經取代之聯苯基、經取代之萘基、經取代之蒽基、經取代之菲基、經取代之芘基或經取代之茀基。 In some embodiments, the amine compound can be from the above formula 1 (2) It is shown that the A ring and the B ring in the chemical formula 1 (2) may each independently be a substituted phenyl group, a substituted biphenyl group, a substituted naphthyl group, a substituted indenyl group, a substituted phenanthryl group. Substituted thiol or substituted thiol.
於一些實施例中,胺系化合物可由化學式1(1)表 示,其中A環可為經取代之苯基、經取代之聯苯基、經取代之萘基、經取代之蒽基、經取代之菲基、經取代之芘基或經取代之茀基;R1可為選自由吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;與經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、苯並咪唑基及咔唑基組成之群組之至少一拉電子基;而p可為2、3或4,舉例而言,可為2。 In some embodiments, the amine compound can be represented by the chemical formula 1 (1), wherein the A ring can be a substituted phenyl group, a substituted biphenyl group, a substituted naphthyl group, a substituted fluorenyl group, substituted Fenyl, substituted fluorenyl or substituted fluorenyl; R 1 may be selected from pyridyl, pyrazinyl, pyrimidinyl, quinolyl, isoquinolinyl, quinazolinyl, triazinyl, benzene And imidazolyl and carbazolyl; and hydrazine atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, methyl sulfonium, hydrazine, hydrazine, carboxyl or its salt, sulfonate An acid group or a salt thereof, a phosphate group or a salt thereof, a C 1 -C 20 alkyl group, a C 1 -C 20 alkyl group substituted with at least one -F, a C 1 -C 20 alkoxy group, a phenyl group, a naphthyl group, Pyridyl, pyrazinyl, pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, anthracene substituted with at least one of anthracenyl, phenanthryl, anthryl, pyridyl, triazinyl and oxazolyl At least one electron withdrawing group of the group consisting of a pyridyl group, a benzimidazolyl group, and an oxazolyl group; and p may be 2, 3 or 4, for example, may be 2.
於一些其他實施例中,胺系化合物可由化學式1(2) 表示,其中A環與B環可各獨立地為經取代之苯基其中A環可為經取代之苯基、經取代之聯苯基、經取代之萘基、經取代之蒽基、經取代之菲基、經取代之芘基或經取代之茀基;R1與R2可各獨立地為選自由吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、 喹唑啉基、三嗪基、苯並咪唑基及咔唑基;與經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、苯並咪唑基及咔唑基組成之群組之至少一拉電子基;而p與q可各獨立地為2、3或4之整數,舉例而言,可皆為2之整數。 In some other embodiments, the amine compound can be represented by the chemical formula 1 (2), wherein the A ring and the B ring can each independently be a substituted phenyl group, wherein the A ring can be a substituted phenyl group, a substituted biphenyl group. a substituted naphthyl group, a substituted indenyl group, a substituted phenanthryl group, a substituted indenyl group or a substituted indenyl group; R 1 and R 2 may each independently be selected from pyridinyl and pyrazinyl groups. , pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, triazinyl, benzimidazolyl and oxazolyl; with ruthenium atoms, -F, -Cl, -Br, -I, -CN , a hydroxyl group, a -NO 2 , an amino group, a decyl group, an anthracene, an anthracene group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a C 1 -C 20 alkyl group, substituted by at least one -F a pyridyl group substituted with at least one of C 1 -C 20 alkyl, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthryl, anthracenyl, pyridyl, triazinyl and oxazolyl At least one electron group of the group consisting of pyrazinyl, pyrimidinyl, quinolyl, isoquinolinyl, quinazolinyl, pyridazinyl, benzimidazolyl and oxazolyl; and p and q are Each independently is an integer of 2, 3 or 4, For Example, it can be an integer of 2 are all.
以上化學式1中Ar1與Ar2的至少之一可為經上列 至少一拉電子基取代之苯基、聯苯基、萘基、蒽基、菲基、芘基或茀基。 At least one of Ar 1 and Ar 2 in the above Chemical Formula 1 may be a phenyl group, a biphenyl group, a naphthyl group, an anthracenyl group, a phenanthryl group, an anthracenyl group or a fluorenyl group substituted with at least one of the above-mentioned electron withdrawing groups.
於以上化學式1中,Ar1與Ar2可各獨立地為經取代 或未經取代之苯基、經取代或未經取代之並環戊二烯基(pentalenyl group)、經取代或未經取代之茚基(indenyl group)、經取代或未經取代之萘基、經取代或未經取代之薁基(azulenyl group)、經取代或未經取代之並環庚三烯基(heptalenyl group)、經取代或未經取代之二環戊二烯並苯基(indaceny1 group)、經取代或未經取代之苊基(acenaphthyl group)、經取代或未經取代之茀基、經取代或未經取代之丙烯合萘基(phenalenyl group)、經取代或未經取代之菲基、經取代或未經取代之蒽基、經取代或未經取代之丙二烯合茀基(fluoranthenyl group)、經取代或未經取代之聯伸三苯基(triphenylenyl group)、經取代或未經取代之芘基、經取代或未經取代之蒯基(chrysenyl group)、經取代或未經取代之稠四苯基(naphthacenyl group)、經取代或未經取代之苉基(picenyl group)、經取代或未經取代之苝基(perylenyl group)、經取代或未經取代之 五苯基(pentaphenyl group)、經取代或未經取代之稠六苯基(hexacenyl group)、經取代或未經取代之吡咯基、經取代或未經取代之吡唑基、經取代或未經取代之咪唑基、經取代或未經取代之咪唑啉基、經取代或未經取代之咪唑吡啶基、經取代或未經取代之咪唑嘧啶基、經取代或未經取代之吡啶基、經取代或未經取代之吡嗪基、經取代或未經取代之嘧啶基、經取代或未經取代之苯並咪唑基、經取代或未經取代之吲哚基、經取代或未經取代之嘌呤基、經取代或未經取代之喹啉基、經取代或未經取代之酞嗪基、經取代或未經取代之吲哚嗪基、經取代或未經取代之萘啶基(naphthyridinyl group)、經取代或未經取代之喹唑啉基、經取代或未經取代之噌啉基、經取代或未經取代之吲唑基、經取代或未經取代之咔唑基、經取代或未經取代之吩嗪基、經取代或未經取代之菲啶基、經取代或未經取代之吡喃基(pyranyl group)、經取代或未經取代之色烯基(chromenyl group)、經取代或未經取代之呋喃基(furanyl group)、經取代或未經取代之苯並呋喃基(benzofuranyl group)、經取代或未經取代之噻吩基(thienyl group)、經取代或未經取代之苯並噻吩基(benzothienyl group)、經取代或未經取代之異噻唑基(isothiazolyl group)、經取代或未經取代之苯並咪唑基(benzoimidazolyl group)、經取代或未經取代之異噁唑基(isoxazolyl group)、經取代或未經取代之二苯並噻吩基(dibenzothienyl group)、經取代或未經取代之二苯並呋喃基(dibenzofuranyl group)、經取代或未經取代之三嗪基、經取代或未經取代之噁二唑基(oxadiazolyl group)、經取代或未經取代之噠嗪基、經取代或未經取代之三唑基、經取代或未經取代之四唑基或經取代或未經取代之啡啉基(phenanthrolinyl group)。Ar1與Ar2的至少之一可為經上列至少一拉電子基取代之苯基、聯苯基、萘 基、蒽基、菲基、芘基或茀基。 In the above Chemical Formula 1, Ar 1 and Ar 2 may each independently be a substituted or unsubstituted phenyl group, a substituted or unsubstituted pentalenyl group, substituted or unsubstituted. An indenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted azulenyl group, a substituted or unsubstituted heptalenyl group, Substituted or unsubstituted dicyclohexadienyl group, substituted or unsubstituted acenaphthyl group, substituted or unsubstituted thiol group, substituted or unsubstituted a phenalenyl group, a substituted or unsubstituted phenanthryl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted propylanthenyl group, substituted Or unsubstituted terphenylenyl group, substituted or unsubstituted fluorenyl group, substituted or unsubstituted chrysenyl group, substituted or unsubstituted fused tetraphenyl ( Naphthacenyl group), substituted or unsubstituted picenyl group, Alternate or unsubstituted perylenyl group, substituted or unsubstituted pentaphenyl group, substituted or unsubstituted hexacenyl group, substituted or unsubstituted Pyrrolyl, substituted or unsubstituted pyrazolyl, substituted or unsubstituted imidazolyl, substituted or unsubstituted imidazolinyl, substituted or unsubstituted imidazolidinyl, substituted or Unsubstituted imidazolidinyl, substituted or unsubstituted pyridyl, substituted or unsubstituted pyrazinyl, substituted or unsubstituted pyrimidinyl, substituted or unsubstituted benzimidazolyl , substituted or unsubstituted fluorenyl, substituted or unsubstituted fluorenyl, substituted or unsubstituted quinolinyl, substituted or unsubstituted pyridazinyl, substituted or unsubstituted a pyridazinyl group, a substituted or unsubstituted naphthyridinyl group, a substituted or unsubstituted quinazolinyl group, a substituted or unsubstituted porphyrin group, substituted or unsubstituted Carbazolyl, substituted or unsubstituted carbazolyl, Alken or unsubstituted phenazinyl, substituted or unsubstituted phenanthryl, substituted or unsubstituted pyranyl group, substituted or unsubstituted chromenyl group Substituted or unsubstituted furanyl group, substituted or unsubstituted benzofuranyl group, substituted or unsubstituted thienyl group, substituted or unsubstituted Substituted benzothienyl group, substituted or unsubstituted isothiazolyl group, substituted or unsubstituted benzoimidazolyl group, substituted or unsubstituted Isozolyl group, substituted or unsubstituted dibenzothienyl group, substituted or unsubstituted dibenzofuranyl group, substituted or unsubstituted three Azinyl, substituted or unsubstituted oxadiazolyl group, substituted or unsubstituted pyridazinyl, substituted or unsubstituted triazolyl, substituted or unsubstituted tetrazole Substituted or unsubstituted morpholine Phenanthrolinyl group. At least one of Ar 1 and Ar 2 may be a phenyl group, a biphenyl group, a naphthyl group, an anthracenyl group, a phenanthryl group, an anthracenyl group or an anthracenyl group substituted with at least one of the above-mentioned electron withdrawing groups.
舉例而言,以上化學式1中之Ar1與Ar2可各獨立 地為經取代或未經取代之苯基、經取代或未經取代之萘基、經取代或未經取代之茀基、經取代或未經取代之菲基、經取代或未經取代之蒽基、經取代或未經取代之聯伸三苯基、經取代或未經取代之芘基、經取代或未經取代之蒯基、經取代或未經取代之吡啶基、經取代或未經取代之吡嗪基、經取代或未經取代之嘧啶基、經取代或未經取代之喹啉基、經取代或未經取代之咔唑基、經取代或未經取代之三嗪基、經取代或未經取代之二苯並噻吩基、經取代或未經取代之二苯並呋喃基或經取代或未經取代之啡啉基。Ar1與Ar2的至少之一可為經選自由-F;-CN;經至少一個-F取代之C1-C20烷基;吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基組成之群組之至少一拉電子基取代之苯基、聯苯基、萘基、蒽基、菲基、芘基或茀基。 For example, Ar 1 and Ar 2 in the above Chemical Formula 1 may each independently be a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted fluorenyl group, Substituted or unsubstituted phenanthryl, substituted or unsubstituted fluorenyl, substituted or unsubstituted tert-triphenyl, substituted or unsubstituted fluorenyl, substituted or unsubstituted fluorenyl , substituted or unsubstituted pyridyl, substituted or unsubstituted pyrazinyl, substituted or unsubstituted pyrimidinyl, substituted or unsubstituted quinolinyl, substituted or unsubstituted Carbazolyl, substituted or unsubstituted triazinyl, substituted or unsubstituted dibenzothiophenyl, substituted or unsubstituted dibenzofuranyl or substituted or unsubstituted morpholine base. At least one of Ar 1 and Ar 2 may be a C 1 -C 20 alkyl group selected from -F; -CN; substituted with at least one -F; pyridyl, pyrazinyl, pyrimidinyl, quinolyl, iso a quinolyl group, a quinazolinyl group, a triazinyl group, a benzimidazolyl group and a carbazolyl group; and a ruthenium atom, -F, -Cl, -Br, -I, -CN, a hydroxyl group, -NO 2 , an amino group, Mercapto, anthracene, anthracene, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a C 1 -C 20 alkyl group, a C 1 -C 20 alkyl group substituted with at least one -F, C Pyridyl, pyrazinyl, pyrimidinyl, quinolin substituted with at least one of 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthryl, anthryl, pyridyl, triazinyl and oxazolyl At least one electron-substituted phenyl group, biphenyl group, naphthyl group, fluorenyl group substituted with a group consisting of a phenyl group, an isoquinolyl group, a quinazolinyl group, a triazinyl group, a benzimidazolyl group, and a carbazolyl group Fisino, thiol or sulfhydryl.
於一些實施例中,化學式1中之Ar1與Ar2可藉單 鍵鍵結在一起。 In some embodiments, Ar 1 and Ar 2 in Chemical Formula 1 may be bonded together by a single bond.
於一些實施例中胺系化合物可由以下化學式1A至
化學式1J中之任一表示:
化學式1A至化學式1I中之Ar2可與以上結合其他 化學式所述者相同。 Ar 2 in Chemical Formula 1A to Chemical Formula 1I may be the same as those described above in connection with other chemical formulas.
化學式1A與化學式1B中之R11至R15的至少之一、 化學式1C與化學式1D中之R11至R17的至少之一、化學式1E與化學式1J中之R11至R18的至少之一與化學式1F及化學式1G、化學式1H與化學式1I中之R11至R19的至少之一可各獨立地為選自由-F;-CN;-NO2;經至少一個-F取代之C1-C60烷基;C2-C60雜芳基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個-F取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C2-C60雜芳基組成之群組之拉電子基。 At least one of R 11 to R 15 in Chemical Formula 1A and Chemical Formula 1B, at least one of Chemical Formula 1C and at least one of R 11 to R 17 in Chemical Formula 1D, and at least one of Chemical Formula 1E and R 11 to R 18 in Chemical Formula 1J At least one of R 11 to R 19 in the chemical formula 1F and the chemical formula 1G, and the chemical formula 1H and the chemical formula 1I may each independently be selected from C 1 - which is substituted by -F; -CN; -NO 2 ; at least one -F; C 60 alkyl; C 2 -C 60 heteroaryl; and ruthenium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, formamyl, oxime, oxime, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C 1 -C 60 alkyl group, a C 1 -C 60 alkyl group substituted with at least one -F, a C 1 -C 60 alkoxy group, group C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, C 6 -C 60 aryl group and C 2 -C 60 heteroaryl groups substituted with at least one of C 2 -C 60 heteroaryl group of Pull the electronic base.
舉例而言,化學式1A與化學式1B中之R11至R15 的至少之一、化學式1C與化學式1D中之R11至R17的至少之一、化學式1E與化學式1J中之R11至R18的至少之一與化學式1F及化學式1G、化學式1H與化學式1I中之R11至R19的至少之一可各獨立地為選自由-F;-CN;經至少一個-F取代之C1-C20烷基;吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;經氘原子、-F、-Cl、-Br、-I、-CN、 羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、三嗪基、苯並咪唑基及咔唑基組成之群組之拉電子基,但不限於此。 For example, at least one of R 11 to R 15 in Chemical Formula 1A and Chemical Formula 1B, at least one of Chemical Formula 1C and R 11 to R 17 in Chemical Formula 1D, and Chemical Formula 1E and R 11 to R 18 in Chemical Formula 1J At least one of at least one of Formula 1F and Formula 1G, and at least one of R 11 to R 19 of Formula 1H and Formula 1I may each independently be selected from C 1 - substituted by -F; -CN; substituted by at least one -F C 20 alkyl; pyridyl, pyrazinyl, pyrimidinyl, quinolyl, isoquinolinyl, quinazolinyl, triazinyl, benzimidazolyl and oxazolyl; fluorene atom, -F, - Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, formamidine, oxime, oxime, carboxyl or a salt thereof, sulfonic acid group or salt thereof, phosphate group or salt thereof, C 1 -C 20 Alkyl, C 1 -C 20 alkyl substituted with at least one -F, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthryl, anthryl, pyridyl, triazinyl and anthracene a pyridyl group, a pyrazinyl group, a pyrimidinyl group, a quinolyl group, an isoquinolyl group, a quinazolinyl group, a pyridazinyl group, a triazinyl group, a benzimidazolyl group, and an oxazolyl group substituted with at least one of an azolyl group The group pulls the electronic base, but is not limited to this
於一些實施例中,化學式1A至化學式1I中之Ar2 可為,但不限於經由-F;-CN;經至少一個-F取代之C1-C20烷基;吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;與經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、三嗪基、苯並咪唑基及咔唑基組成之群組之至少一拉電子基取代之苯基、聯苯基、萘基、蒽基、菲基、芘基或茀基。 In some embodiments, Ar 2 in Chemical Formula 1A to Chemical Formula 1I may be, but is not limited to, via -F; -CN; C 1 -C 20 alkyl substituted with at least one -F; pyridyl, pyrazinyl, Pyrimidinyl, quinolyl, isoquinolinyl, quinazolinyl, triazinyl, benzimidazolyl and oxazolyl; with ruthenium atoms, -F, -Cl, -Br, -I, -CN, a hydroxyl group, -NO 2 , an amino group, a decyl group, an anthracene, an anthracene group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a C 1 -C 20 alkyl group, a C substituted with at least one -F a pyridyl group substituted with at least one of 1 -C 20 alkyl, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthryl, anthracenyl, pyridyl, triazinyl and oxazolyl, At least one electron-substituted benzene group of pyrazinyl, pyrimidinyl, quinolyl, isoquinolyl, quinazolinyl, pyridazinyl, triazinyl, benzimidazolyl and oxazolyl groups Base, biphenyl, naphthyl, anthracenyl, phenanthryl, anthracenyl or fluorenyl.
於一些實施例中,胺系化合物可由以下化學式1A-(1)
或化學式1A-(2)表示:
於化學式1A-(1)與化學式1A-(2)中,R12、R14、R22 與R24可各獨立地為選自由吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;與經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、苯並咪唑基及咔唑基組成之群組之拉電子基;且Ar2可為經取代或未經取代之苯基、經取代或未經取代之聯苯基、經取代或未經取代之萘基、經取代或未經取代之蒽基、經取代或未經取代之菲基、經取代或未經取代之芘基、經取代或未經取代之茀基。 In Chemical Formula 1A-(1) and Chemical Formula 1A-(2), R 12 , R 14 , R 22 and R 24 may each independently be selected from pyridinyl, pyrazinyl, pyrimidinyl, quinolyl, iso-quine. Alkyl, quinazolinyl, triazinyl, benzimidazolyl and oxazolyl; with ruthenium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, A Anthracenyl, anthracene, anthracene, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C 1 -C 20 alkyl group, a C 1 -C 20 alkyl group substituted with at least one -F, C 1 Pyridyl, pyrazinyl, pyrimidinyl, quinoline substituted with at least one of -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthryl, anthryl, pyridyl, triazinyl and oxazolyl An electron withdrawing group of a group consisting of a group consisting of a quinolyl group, an isoquinolyl group, a quinazolinyl group, a pyridazinyl group, a benzimidazolyl group, and a carbazolyl group; and Ar 2 may be a substituted or unsubstituted phenyl group, substituted Or unsubstituted biphenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted fluorenyl, substituted or unsubstituted phenanthryl, substituted or unsubstituted fluorenyl, Substituted or unsubstituted thiol.
於一些實施例中,化學式1A-(1)與化學式1A-(2) 中之R12、R14、R22與R24可各獨立地選自由-F;-CN;-CH2F;-CHF2;-CF3;與由以上化學式2(1)至化學式2(14)表示之基團所組成之群組。 In some embodiments, R 12 , R 14 , R 22 and R 24 in Formula 1A-(1) and Formula 1A-(2) may each independently be selected from -F; -CN; -CH 2 F; CHF 2 ; -CF 3 ; and a group consisting of the groups represented by the above Chemical Formula 2 (1) to Chemical Formula 2 (14).
於一些實施例中,以上化學式1A-(1)與化學式 1A-(2)中之R12、R14、R22與R24可各獨立地為由以上化學式2(1)至化學式2(8)表示之基團。 In some embodiments, R 12 , R 14 , R 22 and R 24 in the above Chemical Formula 1A-(1) and Chemical Formula 1A-(2) may each independently be from the above Chemical Formula 2(1) to Chemical Formula 2 (8) ) the group indicated.
於一些實施例中,以上化學式1A-(1)與化學式 1A-(2)中之R12、R14、R22與R24可各獨立地為由以上化學式2(2)表示,但不限於此。 In some embodiments, R 12 , R 14 , R 22 and R 24 in the above Chemical Formula 1A-(1) and Chemical Formula 1A-(2) may each independently be represented by the above Chemical Formula 2 (2), but are not limited thereto. this.
於化學式1A-(1)中,Ar2的可為苯基、聯苯基、萘 基、蒽基、菲基、芘基或茀基,但不限於此。 In Chemical Formula 1A-(1), Ar 2 may be a phenyl group, a biphenyl group, a naphthyl group, an anthracenyl group, a phenanthryl group, an anthracenyl group or a fluorenyl group, but is not limited thereto.
於化學式1中,X1可為經取代或未經取代之伸苯 基(phenylene group)、經取代或未經取代之伸並環戊二烯基(pentalenylene group)、經取代或未經取代之伸茚基(indenylene group)、經取代或未經取代之伸萘基(naphthylene group)、經取代或未經取代之伸薁基(azulenylene group)、經取代或未經取代之伸並環庚三烯基(heptalenylene group)、經取代或未經取代之伸二環戊二烯並苯基(indacenylene group)、經取代或未經取代之伸苊基(acenaphthylene group)、經取代或未經取代之伸茀基(fluorenylene group)、經取代或未經取代之伸丙烯合萘基(phenalenylene group)、經取代或未經取代之伸菲基(phenanthrenylene group)、經取代或未經取代之伸蒽基(anthrylene group)、經取代或未經取代之伸丙二烯合茀基(fluoranthenylene group)、經取代或未經取代之伸聯伸三苯基(triphenylenylene group)、經取代或未經取代之伸芘基(pyrenylene group)、經取代或未經取代之伸蒯基(chrysenylene group)、經取代或未經取代之伸稠四苯基(naphthacenylene group)、經取代或未經取代之伸苉基(picenylene group)、經取代或未經取代之伸苝基(perylenylene group)、經取代或未經取代之伸五苯基(pentaphenylene group)、經取代或未經取代之伸稠六苯基(hexacenylene group)、經取代或未經取代之伸吡咯基(pyrrolylene group)、經取代或未經取代之伸吡唑基(pyrazolylene group)、經取代或未經取代之伸咪唑基(imidazolylene group)、經取代或未經取代之伸咪唑啉基(imidazolinylene group)、經取代或未經取代之伸咪唑吡啶基(imidazopyridinylene group)、經取代或未經取代之伸咪唑嘧啶基(imidazopyrimidinylene group)、經取代或未經取代之 伸吡啶基(pyridinylene group)、經取代或未經取代之伸吡嗪基(pyrazinylene group)、經取代或未經取代之伸嘧啶基(pyrimidinylene group)、經取代或未經取代之伸吲哚基(indolylene group)、經取代或未經取代之伸嘌呤基(purinylene group)、經取代或未經取代之伸喹啉基(quinolinylene group)、經取代或未經取代之伸酞嗪基(phthalazinylene group)、經取代或未經取代之伸吲哚嗪(indolizinylene group)、經取代或未經取代之伸萘啶基(naphthyridinylene group)、經取代或未經取代之伸喹唑啉基(quinazolinylene group)、經取代或未經取代之伸噌啉基(cinnolinylene group)、經取代或未經取代之伸吲唑基(indazolylene group)、經取代或未經取代之伸咔唑基(carbazolylene group)、經取代或未經取代之伸吩嗪基(phenazinylene group)、經取代或未經取代之伸菲啶基(phenanthridinylene group)、經取代或未經取代之伸哌喃基(pyranylene group)、經取代或未經取代之伸色烯基(chromenylene group)、經取代或未經取代之伸呋喃基(furanylene group)、經取代或未經取代之伸苯並呋喃基(benzofuranylene group)、經取代或未經取代之伸噻吩基(thienylene group)、經取代或未經取代之伸苯並噻吩基(benzothienylene group)、經取代或未經取代之伸異噻唑基(isothiazolylene group)、經取代或未經取代之伸苯並咪唑基(benzoimidazolylene group)、經取代或未經取代之伸異噁唑基(isoxazolylene group)、經取代或未經取代之伸二苯並噻吩基(dibenzothienylene group)、經取代或未經取代之伸二苯並呋喃基(dibenzofuranylene group)、經取代或未經取代之伸三嗪基(triazinylene group)、經取代或未經取代之伸噁二唑基(oxadiazolylene group)、經取代或未經取代之伸噠嗪基(pyridazinylene group)、經取代或未經取代之伸三唑基 (triazolylene group)或經取代或未經取代之伸四唑基(tetrazolylene group)。化學式中之X1可具有可選自上述取代基中之至少一取代基。 In Chemical Formula 1, X 1 may be substituted or unsubstituted phenylene group, substituted or unsubstituted stretched pentalenylene group, substituted or unsubstituted Indenylene group, substituted or unsubstituted naphthylene group, substituted or unsubstituted azulenylene group, substituted or unsubstituted stretched heptane Heptalenylene group, substituted or unsubstituted indaceneylene group, substituted or unsubstituted acenaphthylene group, substituted or unsubstituted stretch Fluorylene group, substituted or unsubstituted phenalenylene group, substituted or unsubstituted phenanthrenylene group, substituted or unsubstituted thiol group ( Anthrylene group), substituted or unsubstituted fluoranthenylene group, substituted or unsubstituted stretched triphenylenylene group, substituted or unsubstituted stretch group (pyrenylene group), replaced Or unsubstituted chrysenylene group, substituted or unsubstituted naphthacenylene group, substituted or unsubstituted picenylene group, substituted or unsubstituted Substituted perylenylene group, substituted or unsubstituted pentaphenylene group, substituted or unsubstituted hexacenylene group, substituted or unsubstituted Pyrrolylene group, substituted or unsubstituted pyrazolylene group, substituted or unsubstituted imidazolylene group, substituted or unsubstituted extended imidazolinyl (imidazolinylene group), substituted or unsubstituted imidazopyridinylene group, substituted or unsubstituted imidazopyrimidinylene group, substituted or unsubstituted pyridinylene group , substituted or unsubstituted pyrazinylene group, substituted or unsubstituted pyrimidinylene group, substituted or unsubstituted thiol (ind Olylene group), substituted or unsubstituted purinylene group, substituted or unsubstituted quinolinylene group, substituted or unsubstituted phthalazinylene group , substituted or unsubstituted indolizinylene group, substituted or unsubstituted naphthyridinylene group, substituted or unsubstituted quinazolinylene group, Substituted or unsubstituted cinnolinylene group, substituted or unsubstituted indazolylene group, substituted or unsubstituted carbazolylene group, substituted Or unsubstituted phenazinylene group, substituted or unsubstituted phenanthridinylene group, substituted or unsubstituted pyranylene group, substituted or not Substituted chromenylene group, substituted or unsubstituted furanylene group, substituted or unsubstituted benzofuranylene group, substituted or unsubstituted a thienylene group, a substituted or unsubstituted benzothienylene group, a substituted or unsubstituted isothiazolylene group, a substituted or unsubstituted stretch Benzoimidazolylene group, substituted or unsubstituted isoxazolylene group, substituted or unsubstituted dibenzothienylene group, substituted or unsubstituted Dibenzofuranylene group, substituted or unsubstituted triazinylene group, substituted or unsubstituted oxadiazolylene group, substituted or unsubstituted extension Pyrazazinylene group, substituted or unsubstituted triazolylene group or substituted or unsubstituted tetrazolylene group. X 1 in the chemical formula may have at least one substituent which may be selected from the above substituents.
於一些實施例中,化學式1中之X1可為但不限於經 取代或未經取代之伸苯基、經取代或未經取代之伸萘基、經取代或未經取代之伸茀基、經取代或未經取代之伸菲基、經取代或未經取代之伸蒽基、經取代或未經取代之伸聯伸三苯基、經取代或未經取代之伸芘基、經取代或未經取代之伸蒯基、經取代或未經取代之伸吡啶基、經取代或未經取代之伸吡嗪基、經取代或未經取代之伸嘧啶基、經取代或未經取代之伸喹啉基、經取代或未經取代之伸喹唑啉基、經取代或未經取代之伸咔唑基、經取代或未經取代之伸二苯並噻吩基、經取代或未經取代之伸二苯並呋喃基、經取代或未經取代之伸三嗪基或經取代或經取代或未經取代之伸噠嗪基、經取代或未經取代之伸三唑基或經取代或未經取代之伸四唑基。 In some embodiments, X 1 in Chemical Formula 1 may be, but not limited to, substituted or unsubstituted phenyl, substituted or unsubstituted anthranyl, substituted or unsubstituted hydrazine, Substituted or unsubstituted phenanthrenyl, substituted or unsubstituted thiol, substituted or unsubstituted stretched triphenyl, substituted or unsubstituted thiol, substituted or unsubstituted Substituted extended, substituted or unsubstituted extended pyridyl, substituted or unsubstituted extended pyrazinyl, substituted or unsubstituted pyrimidinyl, substituted or unsubstituted quinolin Alkyl, substituted or unsubstituted quinazolinyl, substituted or unsubstituted carbazolyl, substituted or unsubstituted dibenzothiophenyl, substituted or unsubstituted diphenyl And a furanyl group, a substituted or unsubstituted triazinyl group or a substituted or substituted or unsubstituted oxazinyl group, a substituted or unsubstituted zirazolyl group or a substituted or unsubstituted stretching group Azolyl.
舉例而言,以上化學式1中之X1可為由以下化學式
5(1)至化學式5(16)的其中之一表示之基團:
於化學式5(1)至化學式5(16)中,Z1至Z8可各獨立 地為氫原子;氘原子;-F;-Cl;-Br;-I;-CN;羥基;-NO2;氨基;甲脒基;胼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;C1-C20烷基;C1-C20烷氧基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽的至少之一取代之C1-C20烷基與C1-C20烷氧基;C6-C20芳基;C2-C20雜芳基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、C1-C20烷氧基、C6-C20芳基與C2-C20雜芳基的至少之一取代之C6-C20芳基與C2-C20雜芳基。 In Chemical Formula 5 (1) 5 to Chemical Formula (16), Z 1 to Z 8 may be each independently a hydrogen atom; a deuterium atom; -F; -Cl; -Br; -I ; -CN; hydroxy; -NO 2 Amino group; formazan group; anthracene; anthracene; a carboxyl group or a salt thereof; a sulfonic acid group or a salt thereof; a phosphate group or a salt thereof; a C 1 - C 20 alkyl group; a C 1 - C 20 alkoxy group; -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, formamidine, hydrazine, hydrazine, carboxyl or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof One substituted C 1 -C 20 alkyl group and C 1 -C 20 alkoxy group; C 6 -C 20 aryl group; C 2 -C 20 heteroaryl group; ruthenium atom, -F, -Cl, -Br , -I, -CN, hydroxy, -NO 2 , amino, formamidine, hydrazine, hydrazine, carboxyl or a salt thereof, sulfonic acid group or salt thereof, phosphate group or salt thereof, C 1 -C 20 alkyl group, C 1 -C 20 alkoxy group, at least one C 6 -C 20 aryl and C 2 -C 20 heteroaryl group substituted with aryl of C 6 -C 20 aryl and C 2 -C 20 heteroaryl group.
於化學式5(1)至化學式5(16)中,*表示至化學式1 中之蒽的鍵結位置,而*’表示至化學式1中之N的鍵結位置。 In Chemical Formula 5(1) to Chemical Formula 5(16), * represents to Chemical Formula 1 The bonding position of the middle one, and *' indicates the bonding position of N to the chemical formula 1.
舉例而言,化學式5(1)至化學式5(16)中之Z1至Z8 可各獨立地為氫原子;氘原子;-F;-Cl;-Br;-I;-CN;羥基;-NO2;氨基;甲脒基;胼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;甲基、乙基、丙基、丁基與戊基;甲氧基、乙氧基、丙氧基、丁氧基與戊氧基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其 鹽、磷酸基或其鹽的至少之一取代之甲基、乙基、丙基、丁基、戊基、甲氧基、乙氧基、丙氧基、丁氧基與戊氧基;苯基、萘基、蒽基、菲基、芘基、茀基;吡啶基、嘧啶基、三嗪基、喹啉基與咔唑基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、吡啶基的至少之一取代之苯基、萘基、蒽基、菲基、芘基、茀基、吡啶基、嘧啶基、三嗪基、喹啉基與咔唑基,但不限於此。 For example, Z 1 to Z 8 in Chemical Formula 5(1) to Chemical Formula 5(16) may each independently be a hydrogen atom; a halogen atom; -F; -Cl; -Br; -I; -CN; a hydroxyl group; -NO 2 ;amino group; formazan; hydrazine; hydrazine; carboxyl group or a salt thereof; sulfonic acid group or a salt thereof; phosphoric acid group or a salt thereof; methyl group, ethyl group, propyl group, butyl group and pentyl group; , ethoxy, propoxy, butoxy and pentyloxy; through a ruthenium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, formazan, oxime, Methyl, ethyl, propyl, butyl, pentyl, methoxy, ethoxy, propoxy, substituted with at least one of hydrazine, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof , butoxy and pentyloxy; phenyl, naphthyl, anthracenyl, phenanthryl, anthracenyl, fluorenyl; pyridyl, pyrimidinyl, triazinyl, quinolyl and oxazolyl; -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, methionyl, anthracene, fluorene, carboxy or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, C 1 -C 20 alkyl group, at least one C 1 -C 20 alkoxy, phenyl, naphthyl, anthryl, pyridyl substituted phenyl group of Naphthyl, anthryl, phenanthryl, pyrenyl, fluorenyl, pyridyl, pyrimidinyl, triazinyl, quinolinyl group and carbazolyl, but is not limited thereto.
於化學式1中,m為1至5之整數,且於一些實施 例中,可為1、2或3,但不限於此。 In Chemical Formula 1, m is an integer from 1 to 5, and in some implementations In the example, it may be 1, 2 or 3, but is not limited thereto.
化學式1之胺系化合物可為,例如以下化合物1至
化合物109的其中之一,但不限於此:
以上化學式1之胺系化合物中之Ar1與Ar2的至少 之一為經由-F;-CN;-NO2;經至少一個-F取代之C1-C60烷基;C2-C60雜芳基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C2-C60雜芳基組成 之群組的至少一拉電子基取代之C6-C60芳基,由以下化學式1’中之「Al」表示之部份能夠拉電子。 At least one of Ar 1 and Ar 2 in the amine compound of the above Chemical Formula 1 is a C 1 -C 60 alkyl group substituted via at least one -F via -F; -CN; -NO 2 ; C 2 -C 60 a heteroaryl group; and a ruthenium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, methionyl, anthracene, fluorene, carboxy or a salt thereof, a sulfonic acid group or a salt, a phosphate group or a salt thereof, a C 1 -C 60 alkyl group, a C 1 -C 60 alkoxy group, a C 2 -C 60 alkenyl group, a C 2 -C 60 alkynyl group, a C 6 -C 60 aryl group and a C at least one 2 -C 60 heteroaryl group substituted with aryl of C 2 -C 60 heteroaryl group consisting of at least one electron withdrawing substituent of C 6 -C 60 aryl group, a 1 'in the' following chemical formula Al The part indicated can pull electrons.
化學式1’之胺系化合物具有豐富電子之萘-蒽核心與具拉電子能力之Al部分,而因此可具有良好之電子傳輸能力。當拉電子基為經取代或未經取代之C2-C60雜芳基時,經取代或未經取代之C2-C60雜芳基經由C6-C60芳基非直接地連結至化學式1’之N。從而包含化學式1之胺系化合物之有機發光二極體可具有改良之效率特性。當拉電子基為-CN時,包含化學式1之胺系化合物之有機發光二極體可具有改良之使用壽命特性。 The amine compound of the formula 1' has a rich naphthalene-quinone core of electrons and an Al moiety having electron-trapping ability, and thus can have good electron transporting ability. When the electron withdrawing group is a substituted or unsubstituted C 2 -C 60 heteroaryl group, the substituted or unsubstituted C 2 -C 60 heteroaryl group is indirectly bonded via a C 6 -C 60 aryl group to N of the chemical formula 1'. Thus, the organic light-emitting diode comprising the amine compound of Chemical Formula 1 can have improved efficiency characteristics. When the electron-withdrawing group is -CN, the organic light-emitting diode containing the amine compound of Chemical Formula 1 can have improved service life characteristics.
不希望被特定的理論束縛,於i)缺乏上述拉電子基之包含萘-蒽核心之胺系化合物或ii)具有直接連結至N之吡啶之包含萘-蒽核心之胺系化合物的任一中,最高佔有分子軌域(HOMO)電子密度可能集中於蒽部分附近。然而,於以上化學式1之蒽系化合物中,HOMO電子密度可能散佈於胺部分附近,從而最低未佔有分子軌域(LUMO)電子密度可能相對地定於蒽附近。此可能賦予化學式1之胺系化合物改良之偶極特性。從而可改良化學式1之胺系化合物之電子傳輸特性。 Without wishing to be bound by a particular theory, i) any of the amine-based compounds comprising a naphthalene-quinone core lacking the above-described electron withdrawing group or ii) an amine-based compound comprising a naphthalene-quinone core directly bonded to the pyridine of N The highest occupied molecular orbital (HOMO) electron density may be concentrated near the 蒽 portion. However, in the lanthanide compound of the above Chemical Formula 1, the HOMO electron density may be dispersed near the amine moiety, so that the lowest unoccupied molecular orbital (LUMO) electron density may be relatively near the 蒽. This may impart improved dipole characteristics to the amine compound of Chemical Formula 1. Thereby, the electron transporting property of the amine compound of Chemical Formula 1 can be improved.
從而,包含任一由以上化學式1表示之胺系化合物 之有機發光二極體可能具有低驅動電壓、高亮度、高效率與長使用壽命。 Thus, any of the amine compounds represented by the above Chemical Formula 1 is contained The organic light emitting diode may have a low driving voltage, high brightness, high efficiency, and long life.
化學式1之胺系化合物可以已知之有機合成方法合 成。從將詳細描述於下之實例,領域內之習知技術者可理解化學式1之胺系化合物之合成方法。 The amine compound of Chemical Formula 1 can be synthesized by a known organic synthesis method. to make. From the examples which will be described in detail below, those skilled in the art can understand the synthesis method of the amine compound of Chemical Formula 1.
至少一種化學式1之胺系化合物可用於有機發光二 極體之一對電極間。舉例而言,至少一種胺系化合物可於發光層中和/或於陰極與發光層間(例如電子傳輸層、電子注入層或兼具電子傳輸與電子注入能力之功能層)。 At least one amine compound of the formula 1 can be used for organic light-emitting One of the poles is between the electrodes. For example, at least one amine compound may be in the light-emitting layer and/or between the cathode and the light-emitting layer (eg, an electron transport layer, an electron injection layer, or a functional layer having both electron transport and electron injection capabilities).
根據本實施例之其他態樣,有機發光二極體包含第 一電極、相對於第一電極設置之第二電極以及設置於第一電極與第二電極間之有機層,其中有機層包含至少一種上述化學式1之胺系化合物。 According to other aspects of the embodiment, the organic light emitting diode includes the first An electrode, a second electrode disposed relative to the first electrode, and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer comprises at least one amine compound of the above Chemical Formula 1.
如用於本文中,片語「(例如有機層)包含至少一胺 系化合物」意指「(有機層)包含一種以上化學式1之胺系化合物或至少二種不同的以上化學式1之胺系化合物」。 As used herein, the phrase "(eg organic layer) comprises at least one amine The term "based compound" means "the organic layer contains one or more amine compounds of the above formula 1 or at least two different amine compounds of the above formula 1."
於一些實施例中,有機層可僅包含化合物1作為胺 系化合物。化合物1可於有機發光二極體之發光層或電子傳輸層中。於一些實施例中,有機層可包含化合物1與化合物3作為胺系化合物。化合物1與化合物3可於相同層中(例如電子傳輸層中)或可於不同層中(例如,分別於發光層與電子傳輸層中)。 In some embodiments, the organic layer may comprise only compound 1 as an amine. a compound. Compound 1 may be in the light-emitting layer or electron transport layer of the organic light-emitting diode. In some embodiments, the organic layer may comprise Compound 1 and Compound 3 as the amine based compound. Compound 1 and Compound 3 may be in the same layer (for example, in an electron transport layer) or may be in different layers (for example, in the light-emitting layer and the electron transport layer, respectively).
有機層可包含選自電洞注入層(HIL)、電洞傳輸層 (HTL)、兼具電洞注入及電洞傳輸能力之功能層(以下稱為H-功能 層)、緩衝層、電子阻擋層(EBL)、發光層(EML)、電洞阻擋層(HBL)、電子傳輸層(ETL)、電子注入層(EIL)、以及兼具電子注入及電子傳輸能力之功能層(以下稱為E-功能層)間的至少一層。 The organic layer may comprise a hole injection layer (HIL), a hole transport layer (HTL), a functional layer that combines hole injection and hole transmission capability (hereinafter referred to as H-function) Layer), buffer layer, electron blocking layer (EBL), luminescent layer (EML), hole blocking layer (HBL), electron transport layer (ETL), electron injection layer (EIL), and both electron injection and electron transport capabilities At least one layer between the functional layers (hereinafter referred to as E-functional layers).
於此使用之詞彙「有機層」表示位於有機發光二極 體之第一電極與第二電極間之單層及/或複數層。 The term "organic layer" as used herein refers to an organic light-emitting diode. A single layer and/or a plurality of layers between the first electrode and the second electrode of the body.
有機層可包含發光層,其中至少一種胺系化合物可 包含於發光層中。 The organic layer may comprise a light-emitting layer, wherein at least one amine compound may It is included in the light-emitting layer.
發光層中之胺系化合物可用作為基質。當發光層中 之胺系化合物用作為基質時,發光層可更包含螢光摻質。螢光摻質可為藍色螢光摻質。於一些實施例中,發光層中之胺系化合物可用作為摻質。當發光層中之胺系化合物用作為摻質時,胺系化合物可為藍色螢光摻質。 An amine compound in the light-emitting layer can be used as a matrix. When in the luminescent layer When the amine compound is used as a matrix, the light-emitting layer may further contain a fluorescent dopant. The fluorescent dopant can be a blue fluorescent dopant. In some embodiments, an amine compound in the luminescent layer can be used as a dopant. When the amine compound in the light-emitting layer is used as a dopant, the amine compound may be a blue fluorescent dopant.
於一些實施例中,有機層可包含電子傳輸層,其中 至少一種胺系化合物可包含於電子傳輸層中。 In some embodiments, the organic layer can comprise an electron transport layer, wherein At least one amine compound may be included in the electron transport layer.
第1圖為根據一實施例之有機發光二極體10之剖面 示意圖。下文中,根據一實施例之有機發光二極體之結構及其製造方法現將參照第1圖描述。 1 is a cross section of an organic light emitting diode 10 according to an embodiment. schematic diagram. Hereinafter, the structure of an organic light emitting diode according to an embodiment and a method of manufacturing the same will now be described with reference to FIG.
基板11可為用於現存有機發光二極體之任何基 板。於一些實施例中基板11可為例如具強機械強度、熱穩定、透明、表面光滑、易於處理並防水之玻璃基板或透明塑膠基板。 The substrate 11 can be any base for an existing organic light emitting diode board. In some embodiments, the substrate 11 can be, for example, a glass substrate or a transparent plastic substrate that is strong in mechanical strength, thermally stable, transparent, smooth in surface, easy to handle, and waterproof.
第一電極13可藉沈積或濺鍍第一電極形成材料於 基板11上而形成。當第一電極13建構為陽極時,具高功函數之材料可用作為第一電極形成材料以利於電洞注入。第一電極13 可為反射電極或透明電極。適合之第一電極形成材料包含透明及導電材料,例如ITO、IZO、SnO2及ZnO。第一電極13可使用鎂(Mg)、鋁(Al)、鋁-鋰(Al-Li)、鈣(Ca)、鎂-銦(Mg-In)或鎂-銀(Mg-Ag)等以形成為反射電極。 The first electrode 13 may be formed by depositing or sputtering a first electrode forming material on the substrate 11. When the first electrode 13 is constructed as an anode, a material having a high work function can be used as the first electrode forming material to facilitate hole injection. The first electrode 13 may be a reflective electrode or a transparent electrode. Suitable first electrode forming materials include transparent and conductive materials such as ITO, IZO, SnO 2 and ZnO. The first electrode 13 may be formed using magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), or magnesium-silver (Mg-Ag). It is a reflective electrode.
第一電極13可具有單層結構或包含至少兩層之多 層結構。舉例而言,第一電極13可具有ITO/銀/ITO之三層結構,但不限於此。 The first electrode 13 may have a single layer structure or contain at least two layers Layer structure. For example, the first electrode 13 may have a three-layer structure of ITO/silver/ITO, but is not limited thereto.
有機層15可設置於第一電極13上。 The organic layer 15 may be disposed on the first electrode 13.
有機層15可包含電洞注入層、電洞傳輸層、緩衝 層、發光層、電子傳輸層與電子注入層。 The organic layer 15 may include a hole injection layer, a hole transport layer, and a buffer a layer, a light emitting layer, an electron transport layer, and an electron injecting layer.
電洞注入層可藉真空沈積、旋轉塗佈、澆鑄、蘭慕 爾-布羅吉(LB)沈積等形成於第一電極13上。 The hole injection layer can be vacuum deposited, spin coated, cast, and blue A Bolge (LB) deposit or the like is formed on the first electrode 13.
當電洞注入層使用真空沈積形成時,沈積條件可根 據用以形成電洞注入層之化合物、將形成之電洞注入層所需之結構及熱特性而有所變動。舉例而言,真空沈積可於約100℃至約500℃之溫度、約10-8 torr至約10-3 torr之真空程度及約0.01 Å/sec至約100Å/sec之沈積速率下執行。然而,沉積條件不限於此。 When the hole injection layer is formed by vacuum deposition, the deposition conditions may vary depending on the compound used to form the hole injection layer, the structure and thermal characteristics required to form the hole injection layer. For example, vacuum deposition can be performed at a temperature of from about 100 ° C to about 500 ° C, a vacuum of from about 10 -8 torr to about 10 -3 torr, and a deposition rate of from about 0.01 Å / sec to about 100 Å / sec. However, the deposition conditions are not limited to this.
當電洞注入層係使用旋轉塗佈形成時,塗佈條件可 根據用以形成電洞注入層之化合物、將形成之電洞注入層所需之結構及熱特性而有所變動。舉例而言,塗佈速度可於約2,000 rpm至約5,000 rpm之範圍內及在塗佈後執行以移除剩餘溶劑之熱處理溫度為約80℃至約200℃之範圍內。然而,塗佈條件不限於此。 When the hole injection layer is formed by spin coating, the coating conditions may be It varies depending on the compound used to form the hole injection layer, the structure and thermal characteristics required to form the hole injection layer. For example, the coating speed may range from about 2,000 rpm to about 5,000 rpm and after the coating to remove the residual solvent from a heat treatment temperature of from about 80 ° C to about 200 ° C. However, the coating conditions are not limited to this.
電洞注入層可包含任何一般用以形成電洞注入層之 材料。可用以形成電洞注入層之材料之實例為N,N'-聯苯-N,N'-雙-[4-(苯基-間甲苯基-氨基)-苯基]-聯苯-4,4'-二胺(N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4 '-diamine ,DNTPD)、例如酞菁銅之酞菁化合物、4,4',4"-三(3-甲基苯基苯基氨基)三苯胺(4,4’,4”-tris(3-methylphenylphenylamino)triphenylamine,m-MTDATA)、N,N'-二(1-萘基)-N,N'-二苯基聯苯胺(N,N’-di(1-naphthyl)-N,N’-diphenylbenzidine,NPB)、TDATA、2T-NATA、聚苯胺/十二烷基苯磺酸(polyaniline/dodecylbenzenesulfonic acid(Pani/DBSA)、聚(3,4-乙烯基二氧基噻吩)/聚(4-苯乙烯磺酸)(poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate)(PEDOT/PSS)、聚苯胺/樟腦磺酸(polyaniline/camphor sulfonicacid(Pani/CSA)或聚苯胺/聚(4-硫磺苯乙烯)(polyaniline/poly(4-styrenesulfonate),PANI/PSS),但不限於此。 The hole injection layer may comprise any material generally used to form the hole injection layer. An example of a material that can be used to form the hole injection layer is N,N'-biphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4, 4'-diamine (N, N '-diphenyl-N , N' -bis- [4- (phenyl-m-tolyl-amino) -phenyl] -biphenyl-4,4 '- diamine, DNTPD), phthalocyanine e.g. Phthalocyanine phthalocyanine compound, 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine, m-MTDATA , N,N'-bis(1-naphthyl)-N,N'-diphenylbenzidine (N,N'-diphenylbenzidine, NPB), TDATA, 2T -NATA, polyaniline/dodecylbenzenesulfonic acid (Pani/DBSA), poly(3,4-vinyldioxythiophene)/poly(4-styrenesulfonic acid) (poly( 3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate)(PEDOT/PSS), polyaniline/camphor sulfonic acid (Pani/CSA) or polyaniline/poly(4-thiostyrene) (polyaniline/) Poly(4-styrenesulfonate), PANI/PSS), but is not limited thereto.
電洞注入層之厚度可為約100 Å至約10,000Å,且 於一些實施例中,可為約100 Å至約1,000Å。當電洞注入層之厚度於此範圍內時,不需大幅(substantial)增加驅動電壓,電洞注入 層即可獲得良好之電洞注入能力。 The hole injection layer may have a thickness of about 100 Å to about 10,000 Å, and In some embodiments, it can be from about 100 Å to about 1,000 Å. When the thickness of the hole injection layer is within this range, there is no need to substantially increase the driving voltage, and hole injection The layer can achieve good hole injection capability.
接著,電洞傳輸層可藉真空沈積、旋轉塗佈、澆鑄 或蘭慕爾-布羅吉(LB)沈積等形成於電洞注入層上。當電洞傳輸層使用真空沈積或旋轉塗佈形成時,縱然沈積或塗佈條件可根據用以形成電洞傳輸層之材料而有所變動,沈積或塗佈條件可與用以形成電洞注入層者相似。 Then, the hole transport layer can be vacuum deposited, spin coated, cast Or a Langmuer-Broggi (LB) deposit or the like is formed on the hole injection layer. When the hole transport layer is formed using vacuum deposition or spin coating, even if the deposition or coating conditions may vary depending on the material used to form the hole transport layer, deposition or coating conditions may be used to form hole injection. Layers are similar.
適合之習知之電洞傳輸材料之非限制實例為例如N- 苯基咔唑(N-phenylcarbazole)、聚乙烯基咔唑(polyvinylcarbazole)之咔唑衍生物(carbazole derivative)、N,N'-二(3-甲基苯基)-N,N'-二苯基-[1,1-聯苯]-4,4'-二胺(N,N’-bis(3-methylphenyl)-N,N’-diphenyl-[1,1-biphenyl]-4,4’-dia mine,TPD)、4,4',4''-三(N-咔唑)三苯胺(4,4’,4”-tris(N-carbazolyl)triphenylamine,TCTA)、N,N'-二(1-萘基)-N,N'-二苯基聯苯胺(N,N’-di(1-naphthyl)-N,N’-diphenylbenzidine),NPB)。 A non-limiting example of a suitable hole transport material is, for example, N- N-phenylcarbazole, carbazole derivative of polyvinylcarbazole, N,N'-bis(3-methylphenyl)-N,N'-diphenyl N-[1,1-biphenyl]-4,4'-diamine (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4' -dia mine,TPD),4,4',4''-tris(N-carbazolyl)triphenylamine (TCTA), N,N'- N,N'-diphenylbenzidine (N, N'-diphenylbenzidine), NPB).
電洞傳輸層之厚度可為約50 Å至約2,000 Å,且於 一些實施例中,可為約100 Å至約1,500 Å。當電洞傳輸層之厚度於此範圍內時,不需大幅增加驅動電壓,電洞傳輸層即可獲得良 好之電洞傳輸能力。 The hole transport layer can have a thickness of from about 50 Å to about 2,000 Å, and In some embodiments, it can be from about 100 Å to about 1,500 Å. When the thickness of the hole transport layer is within this range, the drive voltage is not required to be greatly increased, and the hole transport layer can be obtained well. Good hole transmission capability.
H-功能層(兼具電洞注入與電洞傳輸能力之功能層) 可包含來自電洞注入層材料及電洞傳輸層材料各群組之至少一材料。H-功能層之厚度可為約100 Å至約10,000 Å,且於一些實施例中,可為約100 Å至約1,000 Å。當H-功能層之厚度於此範圍內時,不需大幅增加驅動電壓,H-功能層即可良好之電洞注入與傳輸能力。 H-functional layer (functional layer with both hole injection and hole transmission capability) At least one material from each group of the hole injection layer material and the hole transport layer material may be included. The thickness of the H-functional layer can range from about 100 Å to about 10,000 Å, and in some embodiments, can range from about 100 Å to about 1,000 Å. When the thickness of the H-functional layer is within this range, the driving voltage is not required to be greatly increased, and the H-functional layer can have good hole injection and transmission capability.
於一些實施例中,電洞注入層、電洞傳輸層與H-
功能層的至少之一可包含由化學式300之化合物與化學式350之化合物的至少之一:
於化學式300與化學式350中,Ar11與Ar12可各獨 立地為經取代或未經取代之C6-C60伸芳基,而Ar21與Ar22可各獨立地為經取代或未經取代之C6-C60芳基。Ar11與Ar12可各獨立地為伸苯基、伸萘基、伸菲基及伸芘基;與經苯基、萘基、蒽基的至少之一取代之伸苯基、伸萘基、伸菲基、伸茀基及伸芘基。Ar21與Ar22可各獨立地為苯基、萘基、菲基及伸芘基;與經苯基、萘基、蒽基的至少之一取代之苯基、萘基、菲基、茀基及芘基的期中之一。 In Chemical Formula 300 and Chemical Formula 350, Ar 11 and Ar 12 may each independently be a substituted or unsubstituted C 6 -C 60 extended aryl group, and Ar 21 and Ar 22 may each independently be substituted or unsubstituted. Substituted C 6 -C 60 aryl. Ar 11 and Ar 12 may each independently be a phenyl, anthracenyl, phenanthrenyl and anthracene; and a phenyl group, a naphthyl group substituted with at least one of a phenyl group, a naphthyl group and an anthracenyl group; Stretching the base, stretching the base and stretching the base. Ar 21 and Ar 22 may each independently be a phenyl group, a naphthyl group, a phenanthryl group and a fluorenyl group; and a phenyl group, a naphthyl group, a phenanthryl group or a fluorenyl group substituted with at least one of a phenyl group, a naphthyl group and an anthracenyl group. And one of the period of the 芘基.
於化學式300中,e與f可各獨立地為0至5之整數, 例如可為0、1或2。於非限制實施例中,e可為1而f可為0,但本揭露不限於此。 In the chemical formula 300, e and f may each independently be an integer of 0 to 5, For example, it can be 0, 1, or 2. In a non-limiting embodiment, e may be 1 and f may be 0, but the disclosure is not limited thereto.
於化學式300與化學式350中,R51至R58、R61至 R69、R71與R72可各獨立地為氫原子、氘原子、鹵素原子、羥基、氰基、-NO2、氨基、甲脒基、肼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、經取代或未經取代之C1-C60烷基、經取代或未經取代之C2-C60烯基、經取代或未經取代之C2-C60炔基、經取 代或未經取代之C1-C60烷氧基、經取代或未經取代之C3-C60環烷基、經取代或未經取代之C6-C60芳基、經取代或未經取代之C6-C60芳氧基或經取代或未經取代之C6-C60芳硫基。於一些非限制實施例中,R51至R58、R61至R69、R71與R72可各獨立地為氫原子;氘原子;鹵素原子;羥基;氰基;-NO2;氨基;甲脒基;肼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;C1-C10烷基(例如甲基、乙基、丙基、丁基、戊基、己基等);C1-C10烷氧基(例如甲氧基、乙氧基、丙氧基、丁氧基、戊氧基等);經氘原子、鹵素原子、羥基、氰基、-NO2、氨基、甲脒基、肼、腙、羧基或其鹽、磺酸基或其鹽及磷酸基或其鹽的至少之一取代之C1-C10烷基或C1-C10烷氧基;苯基;萘基;蒽基;茀基;芘基;及經氘原子、鹵素原子、羥基、氰基、-NO2、氨基、甲脒基、肼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C10烷基及C1-C10烷氧基的至少之一取代之苯基、萘基、蒽基、茀基與芘基的其中之一。 In Chemical Formula 300 and Chemical Formula 350, R 51 to R 58 , R 61 to R 69 , R 71 and R 72 may each independently be a hydrogen atom, a halogen atom, a halogen atom, a hydroxyl group, a cyano group, a -NO 2 , an amino group, Mercapto, anthracene, anthracene, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a substituted or unsubstituted C 1 -C 60 alkyl group, a substituted or unsubstituted C 2 -C 60 alkenyl, substituted or unsubstituted C 2 -C 60 alkynyl, substituted or unsubstituted C 1 -C 60 alkoxy, substituted or unsubstituted C 3 -C 60 ring Alkyl, substituted or unsubstituted C 6 -C 60 aryl, substituted or unsubstituted C 6 -C 60 aryloxy or substituted or unsubstituted C 6 -C 60 arylthio. In some non-limiting embodiments, R 51 to R 58, R 61 to R 69, R 71 and R 72 may be each independently a hydrogen atom; a deuterium atom; a halogen atom; a hydroxyl group; a cyano group; -NO 2; an amino group; Mercapto; hydrazine; hydrazine; a carboxyl group or a salt thereof; a sulfonic acid group or a salt thereof; a phosphate group or a salt thereof; a C 1 -C 10 alkyl group (for example, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, Hexyl, etc.; C 1 -C 10 alkoxy (eg methoxy, ethoxy, propoxy, butoxy, pentyloxy, etc.); ruthenium atom, halogen atom, hydroxyl group, cyano group, -NO a C 1 -C 10 alkyl group or a C 1 -C 10 alkoxy group substituted with at least one of an amino group, a decyl group, a hydrazine, a hydrazine, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, and a phosphate group or a salt thereof Base; phenyl; naphthyl; anthracenyl; fluorenyl; fluorenyl; and fluorene atom, halogen atom, hydroxyl group, cyano group, -NO 2 , amino group, methyl sulfonyl group, hydrazine, hydrazine, carboxyl group or its salt, sulfonate a phenyl, naphthyl, anthracenyl, fluorenyl and anthracenyl group substituted with at least one of an acid group or a salt thereof, a phosphate group or a salt thereof, a C 1 -C 10 alkyl group and a C 1 -C 10 alkoxy group one.
於化學式300中,R59可為苯基;萘基;蒽基;聯苯 基;吡啶基;及經氘原子、鹵素原子、羥基、氰基、-NO2、氨基、甲脒基、肼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、經取代或未經取代之C1-C20烷基及經取代或未經取代之C1-C20烷氧基的至少之一取代之苯基、萘基、蒽基、聯苯基或吡啶基的其中之一。 In the formula 300, R 59 may be phenyl; naphthyl; anthracenyl; biphenyl; pyridyl; and a ruthenium atom, a halogen atom, a hydroxyl group, a cyano group, a -NO 2 , an amino group, a decyl group, an anthracene group, Anthracene, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a substituted or unsubstituted C 1 -C 20 alkyl group, and a substituted or unsubstituted C 1 -C 20 alkoxy group At least one of the substituted phenyl, naphthyl, anthracenyl, biphenyl or pyridyl groups.
於實施例中,化學式300之化合物可為由以下化學
式300A表示之化合物:
化學式300A中之R51、R62、R61與R59與以上之定 義相同,因此其詳細描述於此將不提供。 R 51 , R 62 , R 61 and R 59 in the chemical formula 300A are the same as defined above, and thus a detailed description thereof will not be provided herein.
於一些非限制實施例中,電洞注入層、電洞傳輸層
或H-功能層的至少之一可包含以下化學式301至化學式320表示之至少一化合物:
電洞注入層、電洞傳輸層或H-功能層的至少之一除 了如上述之已知之電洞注入材料、電洞傳輸材料和/或兼具電洞注入與電洞傳輸能力之材料外,可更包含電荷產生材料以增加層導電度。 At least one of a hole injection layer, a hole transport layer, or an H-functional layer In addition to the above-described known hole injecting material, hole transporting material, and/or material having both hole injection and hole transporting ability, a charge generating material may be further included to increase layer conductivity.
電荷產生材料可為例如p摻質。p摻質可為奎寧衍 生物(quinine derivative)、金屬氧化物及含氰化合物的其中之一,但不限於此。p摻質之非限制實例包含例如四氰基對苯二醌二甲烷(tetracyanoquinonedimethane,TCNQ)、2,3,5,6-四氟-四氰-1,4-二甲基對苯醌(2,3,5,6-tetrafluoro-tetracyano-1,4-benzoquinonedimethane,F4-TCNQ)等之醌衍生物(quinone derivative);例如鎢氧化物(tungsten oxide)、鉬氧化物(molybdenum oxide)等之金屬氧化物;及例如以下化合物200之含氰化合物。 The charge generating material can be, for example, a p dopant. Quinine One of quinine derivative, metal oxide and cyano-containing compound, but is not limited thereto. Non-limiting examples of p dopants include, for example, tetracyanoquinonedimethane (TCNQ), 2,3,5,6-tetrafluoro-tetracyano-1,4-dimethyl-p-benzoquinone (2) , quinone derivative such as 3,5,6-tetrafluoro-tetracyano-1,4-benzoquinonedimethane, F4-TCNQ); metal such as tungsten oxide, molybdenum oxide, etc. An oxide; and a cyanide-containing compound such as the following compound 200.
當電洞注入層、電洞傳輸層或H-功能層更包含電荷 產生材料時,電荷產生材料可均勻地或不均勻地散布於層中。 When the hole injection layer, the hole transport layer or the H-functional layer contains more charge When the material is produced, the charge generating material may be uniformly or unevenly dispersed in the layer.
緩衝層可設置於電洞注入層、電洞傳輸層或H-功能 層的至少之一與發光層間。緩衝層可藉根據發光層所發出之光的波長而補償光學共振距離,且因此可增加效率。緩衝層可包含俇為人知之電洞注入材料或電洞傳輸材料。於一些其他實施例中,緩衝層可包含與包含於位於緩衝層下方之電洞注入層、電洞傳輸 層或H-功能層的其中之一材料相同的材料。 The buffer layer can be disposed in the hole injection layer, the hole transmission layer or the H-function At least one of the layers is between the luminescent layer. The buffer layer can compensate for the optical resonance distance by the wavelength of the light emitted by the light-emitting layer, and thus can increase the efficiency. The buffer layer may comprise a well-known hole injection material or a hole transmission material. In some other embodiments, the buffer layer may include a hole injection layer and a hole transmission layer included under the buffer layer. One of the layers or the H-functional layer is of the same material.
接著,發光層可藉真空沈積、旋轉塗佈、澆鑄或蘭 慕爾-布羅吉(LB)沈積等形成於電洞傳輸層、H-功能層或緩衝層上。當發光層使用真空沈積或旋轉塗佈形成時,縱然沈積或塗佈條件可根據用以形成發光層之材料而有所變動,沈積或塗佈條件可與用以形成電洞注入層者相似。 Then, the luminescent layer can be vacuum deposited, spin coated, cast or blue Mur-Brouge (LB) deposition or the like is formed on the hole transport layer, the H-functional layer or the buffer layer. When the light-emitting layer is formed using vacuum deposition or spin coating, the deposition or coating conditions may be similar to those used to form the hole injection layer, even though the deposition or coating conditions may vary depending on the material used to form the light-emitting layer.
發光層可包含至少一種化學式1之胺系化合物。 The light-emitting layer may contain at least one amine compound of Chemical Formula 1.
發光層中之胺系化合物可用作為摻質,例如藍色螢 光摻質。除了胺系化合物外發光層可更包含基質。 An amine compound in the light-emitting layer can be used as a dopant, such as blue firefly Light doping. The luminescent layer may further comprise a matrix in addition to the amine compound.
基質之實例為Alq3、4,4'-N,N'-二咔唑-聯苯 (4,4’-N,N’-dicarbazole-biphenyl,CBP)、聚(n-乙烯咔唑)(poly(n-vinylcarbazole),PVK)、9,10-二(萘-2-基)蒽(9,10-di(naphthalene-2-yl)anthracene,ADN)、TCTA、1,3,5-三(N-苯基苯並咪唑-2-基)苯(1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene,TPBI)、3-叔丁基-9,10-二(萘-2-基)蒽(3-tert-butyl-9,10-di-2-naphthylanthracene,TBADN)、E3、聯苯乙烯(distyrylarylene,DSA)、dmCBP(參見以下化學式)及以下化合物501至化合物509,但不限於此。 Examples of the substrate are Alq 3 , 4 , 4'-N, N'-dicarbazole-biphenyl (CBP), poly(n-vinylcarbazole) ( Poly(n-vinylcarbazole), PVK), 9,10-di(naphthalene-2-yl)anthracene (ADN), TCTA, 1,3,5-three (N-phenylbenzimidazole-2-yl)benzene (TPBI), 3-tert-butyl-9,10-di(naphthalene- 2-tert-butyl-9, 10-di-2-naphthylanthracene (TBADN), E3, distyrylarylene (DSA), dmCBP (see chemical formula below) and the following compounds 501 to 509, But it is not limited to this.
於一些實施例中,由以下化學式400表示之蒽系化 合物可用作為基質。 In some embodiments, the tethering represented by the following chemical formula 400 The compound can be used as a matrix.
化學式400中,Ar111與Ar112各獨立地為經取代或 未經取代之C6-C60伸芳基;Ar113至Ar116各獨立地為經取代或未經取代之C1-C10烷基或經取代或未經取代之C6-C60芳基;而g、h、i與j各獨立地為0至4之整數。 In Chemical Formula 400, Ar 111 and Ar 112 are each independently a substituted or unsubstituted C 6 -C 60 extended aryl group; and Ar 113 to Ar 116 are each independently substituted or unsubstituted C 1 -C 10 An alkyl group or a substituted or unsubstituted C 6 -C 60 aryl group; and g, h, i and j are each independently an integer of 0 to 4.
於一些非限制實施例中,化學式400中之Ar111與 Ar112可各獨立地為伸苯基、伸萘基、伸菲基或伸芘基;或經苯基、萘基及蒽基的至少之一所取代之伸苯基、伸萘基、伸菲基、伸茀基(fluorenyl group)或伸芘基。 In some non-limiting embodiments, Ar 111 and Ar 112 in Formula 400 may each independently be a phenyl, anthracenyl, phenanthrenyl or anthracene group; or at least a phenyl group, a naphthyl group, and an anthracenyl group. One of the substituted phenyl, anthranyl, phenanthrenyl, fluorenyl group or thiol group.
以上化學式400中,g、h、i與j可各獨立地為0、 1或2。 In the above chemical formula 400, g, h, i, and j may each independently be 0, 1 or 2.
於一些非限制實施例中,化學式400之Ar113至Ar116可各獨立地為經苯基、萘基或蒽基的至少之一取代之C1-C10烷基;苯基;萘基;蒽基;芘基;菲基;茀基;經氘原子、鹵素原子、羥基、氰基、-NO2、氨基、甲脒基、肼、腙、羧酸基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、C2-C60烯基、C2-C60炔基、C1-C60烷氧基、苯基、萘基、蒽基、芘基、菲基與茀基之至少之一所取代之苯基、萘基、蒽基、芘基、菲基與茀基;及 的其中之一。 In some non-limiting embodiments, Ar 113 to Ar 116 of the formula 400 may each independently be a C 1 -C 10 alkyl group substituted with at least one of a phenyl group, a naphthyl group or a fluorenyl group; a phenyl group; a naphthyl group; Sulfhydryl; fluorenyl; phenanthryl; fluorenyl; hydrazine atom, halogen atom, hydroxyl group, cyano group, -NO 2 , amino group, methionyl group, anthracene, anthracene, carboxylic acid group or a salt thereof, sulfonic acid group or a salt, a phosphate group or a salt thereof, a C 1 -C 60 alkyl group, a C 2 -C 60 alkenyl group, a C 2 -C 60 alkynyl group, a C 1 -C 60 alkoxy group, a phenyl group, a naphthyl group, a fluorenyl group, a phenyl, naphthyl, anthracenyl, fluorenyl, phenanthryl and anthracenyl group substituted with at least one of an anthracenyl group, a phenanthryl group and a fluorenyl group; One of them.
舉例而言,以上化學式400之蒽系化合物可為由以下化學式表示之化合物的其中之一,但不限於此:
於一些實施例中,由以下化學式401表示之蒽系化 合物可用作為基質。 In some embodiments, the tethering represented by the following chemical formula 401 The compound can be used as a matrix.
化學式401中之Ar122至Ar125可定義如同以上關於 化學式400之Ar113描述,因此其詳細描述於此將不提供。 Ar 122 to Ar 125 in Chemical Formula 401 can be defined as described above with respect to Ar 113 of Chemical Formula 400, and thus a detailed description thereof will not be provided herein.
以上化學式401中之Ar126至Ar127可各獨立地為 C1-C10烷基,例如甲基、乙基或丙基。 Ar 126 to Ar 127 in the above Chemical Formula 401 may each independently be a C 1 -C 10 alkyl group such as a methyl group, an ethyl group or a propyl group.
於化學式401中,k及l可各獨立地為0至4的整數, 例如0、1或2。 In Chemical Formula 401, k and l may each independently be an integer from 0 to 4. For example 0, 1 or 2.
舉例而言,以上化學式401之蒽系化合物可為以下
化學式表示之化合物的其中之一,但不限於此:
發光層中之胺系化合物可用作為基質。除了胺系化 合物外,發光層可更包含摻質,例如藍色摻質、綠色摻質或紅色摻質。 An amine compound in the light-emitting layer can be used as a matrix. In addition to amination In addition, the luminescent layer may further comprise a dopant such as a blue dopant, a green dopant or a red dopant.
藍色摻質之非限制實施例為由以下化學式表示之化 合物。 A non-limiting embodiment of blue dopant is represented by the following chemical formula Compound.
紅色摻質之非限制實施例為由以下化學式表示之化 合物。於一些實施例中,紅色摻質可為於後繪示之DCM或DCJTB。 A non-limiting example of a red dopant is represented by the following chemical formula Compound. In some embodiments, the red dopant can be DCM or DCJTB as shown below.
綠色摻質之非限制實施例為由以下化學式表示之化 合物。於一些實施例中,綠色摻質可為呈現於下之C545T。 A non-limiting example of a green dopant is represented by the following chemical formula Compound. In some embodiments, the green dopant can be C545T presented below.
可用於發光層的摻質之非限制實例為由以下化學式 表示之錯合物。 A non-limiting example of a dopant that can be used for the luminescent layer is the following chemical formula Indicates the complex.
可用於發光層的摻質之非限制實例為由以下化學式 表示之鋨錯合物。 A non-limiting example of a dopant that can be used for the luminescent layer is the following chemical formula Expressed as a complex.
當發光層包含基質與摻質時,發光層中摻質之量可 為以基質之重量為100重量份為基準,大致於約0.01至15重量份。然而摻質之量不限於此範圍內。 When the luminescent layer comprises a matrix and a dopant, the amount of dopant in the luminescent layer may be It is approximately 0.01 to 15 parts by weight based on 100 parts by weight of the substrate. However, the amount of the dopant is not limited to this range.
發光層之厚度可於約100 Å至約1,000 Å,且於一些 實施例中,可為約200 Å至約600 Å之範圍內。當發光層之厚度於此範圍內時,不需大幅增加驅動電壓,發光層即可獲得良好之發光能力。 The thickness of the luminescent layer can range from about 100 Å to about 1,000 Å, and some In embodiments, it may range from about 200 Å to about 600 Å. When the thickness of the light-emitting layer is within this range, the light-emitting layer can obtain good light-emitting capability without greatly increasing the driving voltage.
接著,電子傳輸層可藉真空沈積、旋轉塗佈、澆鑄 等形成於發光層上。當電子傳輸層以真空沈積或旋轉塗佈形成時,縱然沈積或塗佈條件可根據用以形成電子傳輸層之材料而有所變動,沈積或塗佈條件可與用以形成電洞注入層者相似。用以形成電子傳輸層之材料可為任何已知之能穩定傳輸自電子注入電極(陰極)注入之電子的材料。用以形成電子傳輸層之材料之實例為喹啉衍生物(quinoline derivative),例如三(8-羥基喹啉)鋁 (tris(8-quinolinorate)aluminum,Alq3)、TAZ、BAlq、雙(10-羥基苯並[h]喹啉)鈹(beryllium bis(benzoquinolin-10-olate,Bebq2)、9,10-二(萘-2-基)蒽(ADN)、化合物201與化合物202,但不限於此。 Next, the electron transport layer may be formed on the light-emitting layer by vacuum deposition, spin coating, casting, or the like. When the electron transport layer is formed by vacuum deposition or spin coating, even if the deposition or coating conditions may vary depending on the material used to form the electron transport layer, the deposition or coating conditions may be the same as those used to form the hole injection layer. similar. The material used to form the electron transport layer may be any material known to stably transport electrons injected from an electron injecting electrode (cathode). An example of a material used to form the electron transport layer is a quinoline derivative such as tris (8-quinolinorate aluminum, Alq 3 ), TAZ, BAlq, bis (10) -hydroxybenzo[b]quinolin)(beryllium bis(benzoquinolin-10-olate,Bebq 2 ), 9,10-di(naphthalen-2-yl)anthracene (ADN), compound 201 and compound 202, but not Limited to this.
電子傳輸層可包含至少一種上述之胺系化合物。 The electron transport layer may comprise at least one of the above amine based compounds.
當化學式1之胺系化合物用作為形成電子傳輸層之材料時,可改良有機發光二極體之效率和/或使用壽命。包含化學 式1之胺系化合物之電子傳輸層可更包含金屬錯合物,例如8-羥基喹啉鋰(lithium quinolate)。 When the amine compound of Chemical Formula 1 is used as a material for forming an electron transport layer, the efficiency and/or the service life of the organic light emitting diode can be improved. Containing chemistry The electron transport layer of the amine compound of Formula 1 may further comprise a metal complex such as lithium quinolate.
電子傳輸層之厚度可於約100 Å至約1,000 Å,且於 一些實施例中,可為約150 Å至約500 Å。當電子傳輸層於此範圍內時,不需大幅增加驅動電壓,電子傳輸層即可獲得令人滿意之電子傳輸能力。 The electron transport layer may have a thickness of from about 100 Å to about 1,000 Å, and In some embodiments, it can be from about 150 Å to about 500 Å. When the electron transport layer is in this range, the electron transport layer can obtain satisfactory electron transport capability without significantly increasing the driving voltage.
於一些實施例中,除了已知之電子傳輸有機化合物 外,電子傳輸層可更包含含金屬材料。 In some embodiments, in addition to known electron transport organic compounds In addition, the electron transport layer may further comprise a metal-containing material.
含金屬材料可為鋰錯合物。鋰錯合物之非限制實例
為羥基喹啉鋰(lithium quinolate,Liq)與以下化合物203:
接著,幫助電子自陰極注入之電子注入層可形成於 電子傳輸層上。任何適合之電子注入材料可用以形成電子注入層。 Next, an electron injecting layer that assists electron injection from the cathode can be formed on On the electron transport layer. Any suitable electron injecting material can be used to form the electron injecting layer.
用以形成電子注入層之材料之實例為領域內已知之 LiF、NaCl、CsF、Li2O與BaO。用以形成電子注入層之沈積或塗佈條件縱然可根據用以形成電子注入層之材料而有所變動,沈積或塗佈條件可與用以形成電洞注入層者相似。 Examples of materials for forming the electron injecting layer are LiF, NaCl, CsF, Li 2 O and BaO known in the art. The deposition or coating conditions used to form the electron injecting layer may vary depending on the material used to form the electron injecting layer, and the deposition or coating conditions may be similar to those used to form the hole injecting layer.
電子注入層之厚度可於約1 Å至約100 Å,且於一 些實施例中,可為約3 Å至約90 Å。當電子注入層之厚度於此範圍內時,不需大幅增加驅動電壓,電子注入層即可獲得令人滿意之電子注入能力。 The thickness of the electron injecting layer can be from about 1 Å to about 100 Å, and is one In some embodiments, it can range from about 3 Å to about 90 Å. When the thickness of the electron injecting layer is within this range, the electron injecting layer can obtain a satisfactory electron injecting capability without greatly increasing the driving voltage.
第二電極17設置於有機層15上。第二電極17可為 係電子注入電極之陰極。用以形成第二電極17之材料可包含具低功函數之金屬、合金、導電化合物或其混合物。關於此點,第二電極17可包含鋰(Li)、鎂(Mg)、鋁(Al)、鋁-鋰(Al-Li)、鈣(Ca)、鎂-銦(Mg-In)、鎂-銀(Mg-Ag)等,且可行為為薄膜形式透明電極。於一些實施例中,為製造頂發光型發光二極體,透明電極可包含氧化銦錫(ITO)或氧化銦鋅(IZO)。 The second electrode 17 is disposed on the organic layer 15. The second electrode 17 can be The cathode of the electron injecting electrode. The material used to form the second electrode 17 may comprise a metal having a low work function, an alloy, a conductive compound, or a mixture thereof. In this regard, the second electrode 17 may include lithium (Li), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium- Silver (Mg-Ag) or the like, and can behave as a transparent electrode in the form of a film. In some embodiments, to fabricate a top-emitting type of light-emitting diode, the transparent electrode may comprise indium tin oxide (ITO) or indium zinc oxide (IZO).
雖然第1圖之有機發光裝置描述於上,本發明不限於此。 Although the organic light-emitting device of Fig. 1 is described above, the invention is not limited thereto.
當磷光摻質用於發光層中時,電洞阻擋層可藉使用真空沈積、旋轉塗佈、澆鑄、蘭慕爾-布羅吉(LB)沈積等形成於電子傳輸層與發光層間或E-功能層與發光層間,以防止三重態激子或電洞擴散至電子傳輸層。當電洞阻擋層使用真空沈積或旋轉塗佈形成時,縱然沈積或塗佈條件可根據用以形成電洞阻擋層之材料而有所變動,沈積或塗佈條件可與用以形成電洞注入層者相似。可使用任何已知之電洞阻擋材料。電洞阻擋材料之非限制實例為噁二唑衍生物(oxadiazole derivative)、三唑衍生物(triazole derivative)、以及啡啉衍生物(phenanthroline derivative)。舉例而言,由以下化學式表示之BCP可用作為形成電洞阻擋層之材料。 When the phosphorescent dopant is used in the light-emitting layer, the hole barrier layer may be formed between the electron transport layer and the light-emitting layer by vacuum deposition, spin coating, casting, Langmuir-Brouge (LB) deposition, or the like. Between the functional layer and the light-emitting layer to prevent triplet excitons or holes from diffusing to the electron transport layer. When the hole blocking layer is formed using vacuum deposition or spin coating, even if the deposition or coating conditions may vary depending on the material used to form the hole blocking layer, the deposition or coating conditions may be used to form a hole injection. Layers are similar. Any known hole blocking material can be used. Non-limiting examples of hole blocking materials are oxadiazole derivatives, triazole derivatives, and phenanthroline derivatives. For example, a BCP represented by the following chemical formula can be used as a material for forming a hole barrier layer.
電洞阻擋層之厚度可於約20 Å至約1,000 Å,且於 一些實施例中,可為約30 Å至約300 Å。當電洞阻擋層之厚度於此範圍內時,不需大幅增加驅動電壓,電洞阻擋層即可具有良好之電洞阻擋能力。 The thickness of the hole barrier layer can range from about 20 Å to about 1,000 Å, and In some embodiments, it can be from about 30 Å to about 300 Å. When the thickness of the hole blocking layer is within this range, the hole blocking layer can have a good hole blocking capability without greatly increasing the driving voltage.
用於本文中之未經取代之C1-C60烷基(或C1-C60烷 基)之實例為C1-C60線形或分支烷基,例如甲基、乙基、丙基、異丁基(isobutyl)、第二丁基(sec-butyl)、戊基、異戊基(iso-amyl)與己基。經取代之C1-C60烷基之實例為至少一氫原子經氘原子;-F;-Cl;-Br;-I;-CN;羥基;-NO2;氨基;甲脒基;胼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;三(C6-C60芳基)矽烷基;C1-C60烷基、C1-C60烷氧基、C2-C60烯基與C2-C60炔基;至少一氫原子經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽或磷酸基或其鹽的至少之一取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基或C2-C60炔基;C3-C60環烷基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基或C6-C60芳硫基;或經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個-F取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基或C2-C60雜芳基的至少之一取代之C3-C60環烷 基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基或C6-C60芳硫基的至少之一取代之C1-C60烷基。 Examples of unsubstituted C 1 -C 60 alkyl (or C 1 -C 60 alkyl) used herein are C 1 -C 60 linear or branched alkyl groups such as methyl, ethyl, propyl, Isobutyl, sec-butyl, pentyl, iso-amyl and hexyl. An example of a substituted C 1 -C 60 alkyl group is at least one hydrogen atom via a ruthenium atom; -F; -Cl; -Br; -I; -CN; a hydroxyl group; -NO 2 ; an amino group; a fluorenyl group;羧基; a carboxyl group or a salt thereof; a sulfonic acid group or a salt thereof; a phosphate group or a salt thereof; a tri(C 6 -C 60 aryl)decyl group; a C 1 -C 60 alkyl group, a C 1 -C 60 alkoxy group, C 2 -C 60 alkenyl and C 2 -C 60 alkynyl; at least one hydrogen atom via a ruthenium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, formazan a C 1 -C 60 alkyl group, a C 1 -C 60 alkoxy group, a C 2 -C 60 substituted with at least one of ruthenium, osmium, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof or a phosphate group or a salt thereof Alkenyl or C 2 -C 60 alkynyl; C 3 -C 60 cycloalkyl, C 3 -C 60 cycloalkenyl, C 6 -C 60 aryl, C 2 -C 60 heteroaryl, C 6 -C 60 aralkyl, C 6 -C 60 aryloxy or C 6 -C 60 arylthio; or fluorenium atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino , mercapto, anthracene, anthracene, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a C 1 -C 60 alkyl group, a C 1 -C 60 alkyl group substituted with at least one -F, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, C 2 -C 60 alkyne a C 3 -C 60 cycloalkyl group, a C 3 -C 60 cycloalkenyl group, a C 6 -C 60 aryl group substituted with at least one of a C 6 -C 60 aryl group or a C 2 -C 60 heteroaryl group, A C 1 -C 60 alkyl group substituted with at least one of C 2 -C 60 heteroaryl, C 6 -C 60 aralkyl, C 6 -C 60 aryloxy or C 6 -C 60 arylthio.
未經取代之C1-C60烷氧基(或C1-C60烷氧基)可為由 化學式-OA表示之基團,其中A為如上述之未經取代之C1-C60烷基。未經取代之C1-C60烷氧基之實例為甲氧基(methoxy group)與異丙氧基(isopropyloxy group)。烷氧基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 The unsubstituted C 1 -C 60 alkoxy group (or C 1 -C 60 alkoxy group) may be a group represented by the formula -OA, wherein A is an unsubstituted C 1 -C 60 alkane as described above base. Examples of unsubstituted C 1 -C 60 alkoxy groups are methoxy group and isopropyloxy group. At least one hydrogen atom of the alkoxy group may be substituted with a substituent described above in combination with a C 1 -C 60 alkyl group.
未經取代之C2-C60烯基(或C2-C60烯基)為具有少一 或多個碳-碳雙鍵於未經取代C2-C60烷基之中心或末端之烴鏈。烯基之實例為乙烯基(ethenyl)、丙烯基(propenyl)、丁烯基(butenyl)等。未經取代之C2-C60烯基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 Unsubstituted C 2 -C 60 alkenyl (or C 2 -C 60 alkenyl) is a hydrocarbon having one or more carbon-carbon double bonds at the center or terminal of the unsubstituted C 2 -C 60 alkyl group chain. Examples of alkenyl groups are ethenyl, propenyl, butenyl and the like. At least one hydrogen atom of the unsubstituted C 2 -C 60 alkenyl group may be substituted with a substituent described above in combination with a C 1 -C 60 alkyl group.
未經取代之C2-C60炔基(C2-C60炔基)為具有至少一 碳-碳參鍵於其中心或末端之未經取代C2-C60烷基。未經取代之C2-C60炔基(或C2-C60炔基)之實例包含乙炔基(ethynyl)、丙炔(propynyl)基等。炔基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 The unsubstituted C 2 -C 60 alkynyl group (C 2 -C 60 alkynyl group) is an unsubstituted C 2 -C 60 alkyl group having at least one carbon-carbon bond at its center or terminal. Examples of the unsubstituted C 2 -C 60 alkynyl group (or C 2 -C 60 alkynyl group) include an ethynyl group, a propynyl group and the like. At least one hydrogen atom in the alkynyl group may be substituted with a substituent described above in combination with a C 1 -C 60 alkyl group.
如用於本文中,未經取代之C3-C60環烷基指環狀、 單價(monovalent)C3-C60碳之飽和烴基。未經取代之C3-C60環烷基之非限制實例為環丙基(cyclopropyl)、環丁基(cyclobutyl)、環戊基(cylcopentyl)、環己基(cyclohexyl)、環辛基(cyclooctyl)。環烷基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 As used herein, unsubstituted C 3 -C 60 cycloalkyl refers to a cyclic, monovalent C 3 -C 60 carbon saturated hydrocarbon group. Non-limiting examples of unsubstituted C 3 -C 60 cycloalkyl are cyclopropyl, cyclobutyl, cylcopentyl, cyclohexyl, cyclooctyl . At least one hydrogen atom in the cycloalkyl group may be substituted with a substituent described above in combination with a C 1 -C 60 alkyl group.
如用於本文中,未經取代之C3-C60環烯基指非芳 族、具至少一碳-碳雙鍵之環狀不飽和烴基。未經取代之C3-C60環烯基之實例為環丙烯基(cyclopropenyl)、環丁烯基(cyclobutenyl)、環戊烯基(cylcopentenyl)、環己烯基(cyclohexcenyl)、環庚烯基(cycloheptenyl)、1,3-環己二烯基(1,3-cyclohexadienyl group)、1,4-環己二烯基(1,4-cyclohexadienyl group)、2,4-環庚二烯基(2,4-cycloheptadienyl group)與1,5-環辛二烯基(1,5-cyclooctadineyl group)。環烯基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 As used herein, unsubstituted C 3 -C 60 cycloalkenyl refers to a non-aromatic, cyclic unsaturated hydrocarbon group having at least one carbon-carbon double bond. Examples of unsubstituted C 3 -C 60 cycloalkenyl groups are cyclopropenyl, cyclobutenyl, cylcopentenyl, cyclohexcenyl, cycloheptenyl. (cycloheptenyl), 1,3-cyclohexadienyl group, 1,4-cyclohexadienyl group, 2,4-cycloheptadienyl ( 2,4-cycloheptadienyl group) and 1,5-cyclooctadineyl group. At least one hydrogen atom in the cycloalkenyl group may be substituted with a substituent described above in combination with a C 1 -C 60 alkyl group.
未經取代之C6-C60芳基為包含至少一芳香環之具有 6至60個碳原子之碳環系統之單價基。未經取代之C6-C60伸芳基為包含至少一芳香環之具有6至60個碳原子之碳環系統之二價基(divalent group)。當芳基與伸芳基具有至少兩個環時,其可透過單鍵彼此融合。參照C1-C60烷基,芳基與伸芳基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 The unsubstituted C 6 -C 60 aryl group is a monovalent group of a carbocyclic ring system having 6 to 60 carbon atoms containing at least one aromatic ring. The unsubstituted C 6 -C 60 exoaryl group is a divalent group of a carbocyclic ring system having 6 to 60 carbon atoms containing at least one aromatic ring. When the aryl group and the extended aryl group have at least two rings, they may be fused to each other through a single bond. Referring to the C 1 -C 60 alkyl group, at least one hydrogen atom of the aryl group and the extended aryl group may be substituted with a substituent described above in combination with a C 1 -C 60 alkyl group.
經取代或未經取代之C6-C60芳基之實例為苯基、 C1-C10烷苯基(alkylphenyl group)(例如,乙苯基(ethylphenyl group))、C1-C10烷基聯苯基(alkylbiphenyl group)(e.g.,乙基聯苯基(ethylbiphenyl group))、鹵苯基(halophenyl group)(例如,o-、m-或p-氟苯基(fluorophenyl group)及二氯苯基(dichlorophenyl group)、二氰苯基(dicyanophenyl group)、三氟甲氧基苯基(trifluoromethoxyphenyl group)、o-、m-或p-甲苯基(tolyl group)、o-、m-或p-異丙苯基(cumenyl group)、2,4,6-三甲苯基(mesityl group)、苯氧基苯基(phenoxyphenyl group)、(α,α-二甲基苯)苯基((α,α-dimethylbenzene)phenyl group)、(N,N'-二甲基)胺苯基((N,N'-dimethyl)aminophenyl group)、(N,N'-二苯基)胺苯基 ((N,N'-diphenyl)aminophenyl group)、並環戊二烯基、茚基、萘基、鹵萘基(halonaphthyl group)(例如,氟萘基(fluoronaphthyl group))、C1-C10烷基萘基(alkylnaphthyl group)(例如,甲基萘基(methylnaphthyl group))、C1-C10烷氧基萘基(alkoxynaphthyl group)(例如,甲氧基萘基(methoxynaphthyl group))、蒽基、薁基、並庚間三烯基、苊烯基(acenaphthylenyl group)、萉基(phenalenyl group)、茀基、蒽醌基(anthraquinolyl group)、甲基蒽基(methylanthryl group)、菲基、聯三伸苯、芘基、蒯基、乙基-蒯基(ethyl-chrysenyl group)、苉基(picenyl group)、苝基(perylenyl group)、氯苝基(chloroperylenyl group)、五苯基(pentaphenyl group)、稠五苯基、聯四苯基(tetraphenylenyl group)、六苯基(hexaphenyl group)、稠六苯基、茹基(rubicenyl group)、蔻基(coronenyl group)、聯伸三萘基(trinaphthylenyl group)、異稠七苯基(heptaphenyl group)、並環庚三烯基(heptalenyl group)、芘蒽基(pyranthrenyl group)及莪基(ovalenyl group)。經取代之C6-C60芳基之實例可依據上述之未經取代之C6-C60芳基與經取代之C1-C60烷基而推斷。經取代或未經取代之C6-C60伸芳基可依據上述經取代或未經取代之C6-C60芳基而推斷。 Examples of substituted or unsubstituted C 6 -C 60 aryl groups are phenyl, C 1 -C 10 alkylphenyl groups (for example, ethylphenyl group), C 1 -C 10 alkane An alkylbiphenyl group (eg, ethylbiphenyl group), halophenyl group (for example, o-, m- or p-fluorophenyl group and dichloro Dichlorophenyl group, dicyanophenyl group, trifluoromethoxyphenyl group, o-, m- or p-tolyl group, o-, m- or p - cumenyl group, 2,4,6-trimethylol group, phenoxyphenyl group, (α,α-dimethylphenyl)phenyl ((α, Α-dimethylbenzene)phenyl group), (N,N'-dimethyl)aminophenyl group, (N,N'-diphenyl)amine phenyl (N , N'-diphenyl)aminophenyl group), and cyclopentadienyl, fluorenyl, naphthyl, halonaphthyl group (for example, fluoronaphthyl group), C 1 -C 10 alkyl naphthalene group (alkylnaphthyl group) (e.g., methyl naphthyl (methylnaphthyl group)), C 1 -C 10 An alkoxynaphthyl group (eg, methoxynaphthyl group), anthracenyl, fluorenyl, p-heptatrienyl, acenaphthylenyl group, phenalenyl group, Anthraquinolyl group, methylanthryl group, phenanthryl, ternary benzene, fluorenyl, fluorenyl, ethyl-chrysenyl group, fluorenyl Group), perylenyl group, chloroperylenyl group, pentaphenyl group, fused pentaphenyl, tetraphenylenyl group, hexaphenyl group, thick six Phenyl, rubicenyl group, coronenyl group, trinaphthylenyl group, heptaphenyl group, heptalenyl group, sulfhydryl group (pyranthrenyl group) and ovalenyl group. Examples of the substituted C 6 -C 60 aryl group can be inferred from the above-mentioned unsubstituted C 6 -C 60 aryl group and the substituted C 1 -C 60 alkyl group. The substituted or unsubstituted C 6 -C 60 extended aryl group can be inferred from the above substituted or unsubstituted C 6 -C 60 aryl group.
未經取代之C2-C60雜芳基為具有包含選自N、O、P及S之至少一雜原子作為環形成原子之至少一芳香環之單價基。未經取代之C2-C60伸雜芳基為具有包含選自N、O、P及S之至少一雜原子之至少一芳香環之二價基。關於此點,當雜芳基與伸雜芳基具有至少兩個環時,其可透過單鍵彼此融合。雜芳基與伸雜芳基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 The unsubstituted C 2 -C 60 heteroaryl group is a monovalent group having at least one aromatic ring containing at least one hetero atom selected from N, O, P and S as a ring-forming atom. The unsubstituted C 2 -C 60 heteroaryl group is a divalent group having at least one aromatic ring containing at least one hetero atom selected from N, O, P and S. In this regard, when the heteroaryl group and the heteroaryl group have at least two rings, they may be fused to each other through a single bond. At least one hydrogen atom of the heteroaryl group and the heteroaryl group may be substituted with a substituent described above in combination with a C 1 -C 60 alkyl group.
未經取代之C2-C60雜芳基之實例為吡唑基、咪唑 基、噁唑基、噻唑基、三唑基、四唑基、噁二唑基、吡啶基、嗒嗪基、嘧啶基、三嗪基、咔唑基、吲哚基、喹啉基、異喹啉基、苯並咪唑基、咪唑吡啶基、咪唑嘧啶基、二苯並噻吩基、二苯並呋喃基與啡啉基。未經取代之C2-C60伸雜芳基之實例,可依據上述經取代或未經取代之C2-C60伸芳基而推斷。 Examples of unsubstituted C 2 -C 60 heteroaryl groups are pyrazolyl, imidazolyl, oxazolyl, thiazolyl, triazolyl, tetrazolyl, oxadiazolyl, pyridyl, pyridazinyl, pyrimidine , triazinyl, oxazolyl, fluorenyl, quinolyl, isoquinolinyl, benzimidazolyl, imidazolidinyl, imidazolyl, dibenzothiophenyl, dibenzofuranyl and phenanthroline base. The unsubstituted C 2 -C 60 extending Examples of the heteroaryl group may be inferred based on the above-described substituted or non-substituted C 2 -C 60 arylene group.
經取代或未經取代之C6-C60芳氧基指式-OA2(其中 A2為上述經取代或未經取代之C6-C60芳基)。經取代或未經取代之C6-C60芳硫基指-SA3(其中A3為上述經取代或未經取代之C6-C60芳基)。 The substituted or unsubstituted C 6 -C 60 aryloxy group refers to the formula -OA 2 (wherein A 2 is the above substituted or unsubstituted C 6 -C 60 aryl group). The substituted or unsubstituted C 6 -C 60 arylthio group means -SA 3 (wherein A 3 is the above substituted or unsubstituted C 6 -C 60 aryl group).
下文中,本實施例將藉參照以下合成例與其他實例 詳細描述。然而此些實例僅為說明之目的而不意圖限制本實施例之範疇。 Hereinafter, the present embodiment will refer to the following synthesis example and other examples. A detailed description. However, the examples are for illustrative purposes only and are not intended to limit the scope of the embodiments.
化合物1根據以下反應流程圖1合成:
將8.60g(20.0 mmol)之中間物1-1、5.66g(20.0 mmol)之中間物2-1、1.15 g(1.0 mmol)之四(三苯基林)鈀(tetrakis(triphenylphosphine)palladium(0)(Pd(PPh3)4)及8.29 g(60.0 mmol)之K2CO3溶於50 mL之THF/H2O(2:1)混合溶液,接著於70℃下攪拌所得溶液5小時。將所得混合物冷卻至室溫,接著以50 mL的水與50 mL的乙醚萃取三次。搜集有機層並使用硫酸鎂乾燥以蒸發溶劑。以矽膠管柱層析(silica gel column chromatography)分離並純化殘留物以獲得7.33 g(產率80%)之中間物3-1。 8.60 g (20.0 mmol) of intermediate 1-1, 5.66 g (20.0 mmol) of intermediate 2-1, 1.15 g (1.0 mmol) of tetrakis(triphenylphosphine) palladium (0) (Pd(PPh 3 ) 4 ) and 8.29 g (60.0 mmol) of K 2 CO 3 were dissolved in 50 mL of a THF/H 2 O (2:1) mixed solution, followed by stirring the resulting solution at 70 ° C for 5 hours. The resulting mixture was cooled to room temperature, then extracted three times with 50 mL of water and 50 mL of diethyl ether. The organic layer was collected and dried over magnesium sulfate to evaporate the solvent. The residue was separated and purified by silica gel column chromatography. The intermediate was obtained to obtain 7.33 g (yield 80%) of Intermediate 3-1.
將4.58 g(10.0 mmol)之中間物3-1、2.85 g(12.0 mmol)之中間物4-1、0.18 g(0.2 mmol)之Pd2(dba)3(三(二亞苄基丙酮)二鈀[(tris(dibenzylidine acetone)dipalladium(0))])、0.04 g (0.4 mmol)之三叔丁基磷(tri-tert-butylphosphine(P(t-Bu)3))及1.44 g(15.0 mmol)之NaOtBu溶於50 mL之甲苯中,並接著回流所得溶液約3小時。將所得混合物冷卻至室溫,接著以40 mL的水與40 mL的乙醚萃取三次。搜集有機層並使用硫酸鎂乾燥以蒸發溶劑。以矽膠管柱層析分離並純化殘留物以獲得4.80 g(產率78%)之化合物1。使用質譜分析法/快速原子撞擊法(MS/FAB)與1H NMR驗證此化合物。 4.58 g (10.0 mmol) of intermediate 3-1, 2.85 g (12.0 mmol) of intermediate 4-1, 0.18 g (0.2 mmol) of Pd 2 (dba) 3 (tris(dibenzylideneacetone) 2 Palladium [(tris(dibenzylidine acetone) dipalladium(0))]), 0.04 g (0.4 mmol) of tri-tert-butylphosphine (P(t-Bu) 3 )) and 1.44 g (15.0 mmol) NaO t Bu was dissolved in 50 mL of toluene, and then the resulting solution was refluxed for about 3 hours. The resulting mixture was cooled to room temperature and then extracted three times with 40 mL of water and 40 mL of diethyl ether. The organic layer was collected and dried over magnesium sulfate to evaporate solvent. The residue was separated and purified by silica gel column chromatography to afford 4.80 g (yield 78%) of Compound 1. This compound was verified by mass spectrometry/fast atomic impact (MS/FAB) and 1 H NMR.
C46H30FN:計算值615.24,而實測615.22 C 46 H 30 FN: calculated value 615.24, and measured 615.22
1H NMR(CDCl3,400MHz)δ(ppm)8.13-8.11(dd,1H),7.87-7.85(m,1H),7.84-7.80(m,3H),7.72-7.69(m,2H),7.67(d,1H),7.65(d,1H),7.59-7.56(m,2H),7.54-7.51(dd,1H),7.48-7.41(m,4H),7.37-7.23(m,6H),7.18-7.14(m,2H),7.09-7.06(m,1H),6.98-6.94(m,2H),6.85-6.83(dd,1H),6.79-6.75(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.13 - 8.11 (dd, 1H), 7.87-7.85 (m, 1H), 7.84-7.80 (m, 3H), 7.72-7.69 (m, 2H), 7.67 (d, 1H), 7.65 (d, 1H), 7.59-7.56 (m, 2H), 7.54-7.51 (dd, 1H), 7.48-7.41 (m, 4H), 7.37-7.23 (m, 6H), 7.18 -7.14(m,2H), 7.09-7.06(m,1H), 6.98-6.94(m,2H), 6.85-6.83(dd,1H),6.79-6.75(m,2H)
除了使用中間物4-3而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.98 g之化合物3(產率80%)。使用MS/FAB與1H NMR驗證化合物3。 4.98 g of Compound 3 (yield 80%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-3 was used instead of Intermediate 4-1. Compound 3 was verified using MS/FAB and 1 H NMR.
C47H30N2:計算值622.24,而實測622.23 C 47 H 30 N 2 : calculated value 622.24, and measured 622.23
1H NMR(CDCl3,400MHz)δ(ppm)7.84-7.82(m,2H),7.81(d,1H),7.78-7.76(m,1H),7.72-7.68(m,3H),7.66(d,1H),7.65(d,1H),7.63-7.59(m,2H),7.57-7.52(m,3H),7.47-7.43(m,3H),7.41-7.38(m,2H),7.37-7.27(m,6H),7.17(dd,1H),7.13-7.09(m,2H),6.99-6.95(m,1H),6.88-6.85(m,1H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.84-7.82 (m, 2H), 7.81 (d, 1H), 7.78-7.76 (m, 1H), 7.72-7.68 (m, 3H), 7.66 (d) , 1H), 7.65 (d, 1H), 7.63-7.59 (m, 2H), 7.57-7.52 (m, 3H), 7.47-7.43 (m, 3H), 7.41-7.38 (m, 2H), 7.37-7.27 (m, 6H), 7.17 (dd, 1H), 7.13-7.09 (m, 2H), 6.99-6.95 (m, 1H), 6.88-6.85 (m, 1H)
除了使用中間物4-4而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.86 g之化合物4(產率75%)。使用MS/FAB與1H NMR驗證化合物4。 4.86 g of Compound 4 (yield 75%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-4 was used instead of Intermediate 4-1. Compound 4 was verified using MS/FAB and 1 H NMR.
C49H32N2:計算值648.26,而實測648.27 C 49 H 32 N 2 : calculated 648.26, and measured 648.27
1H NMR(CDCl3,400MHz)δ(ppm)7.86-7.82(m,2H),7.81(d,1H),7.73-7.68(m,2H),7.66(d,1H),7.65-7.52(m,3H),7.60-7.58(m,2H)7.54-7.49(m,3H),7.46-7.42(m,3H),7.40-7.28(m,8H),6.99-6.95(m,1H),6.90-6.84(m,4H),6.74-6.70(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.86-7.82 (m, 2H), 7.81 (d, 1H), 7.73-7.68 (m, 2H), 7.66 (d, 1H), 7.65-7.52 (m) , 3H), 7.60-7.58 (m, 2H) 7.54-7.49 (m, 3H), 7.46-7.42 (m, 3H), 7.40-7.28 (m, 8H), 6.99-6.95 (m, 1H), 6.90- 6.84 (m, 4H), 6.74 - 6.70 (m, 2H)
除了使用中間物4-5而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.77 g之化合物5(產率70%)。使用MS/FAB與1H NMR驗證化合物5。 In the same manner as the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-5 was used instead of Intermediate 4-1, 4.77 g of Compound 5 (yield 70%) was prepared. Compound 5 was verified using MS/FAB and 1 H NMR.
C51H36FN:計算值681.28,而實測681.27 C 51 H 36 FN: calculated value 681.28, and measured 681.27
1H NMR(CDCl3,400MHz)δ(ppm)7.84-7.82(m,2H),7.80(d,1H),7.78-7.75(m,1H),7.72-7.68(m,2H),7.67(d,1H),7.65(d,1H),7.62-7.58(m,2H),7.56-7.52(m,2H),7.47-7.44(m,1H),7.38-7.27(m,6H),7.14-7.08(m,2H),6.98-6.96(m,1H),6.94-6.89(m,2H),6.85-6.83(dd,1H),6.79-6.77(m,2H),6.75(d,1H),6.73-6.70(m,2H),1.66(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.84-7.82 (m, 2H), 7.80 (d, 1H), 7.78-7.75 (m, 1H), 7.72-7.68 (m, 2H), 7.67 (d) , 1H), 7.65 (d, 1H), 7.62-7.58 (m, 2H), 7.56-7.52 (m, 2H), 7.47-7.44 (m, 1H), 7.38-7.27 (m, 6H), 7.14-7.08 (m, 2H), 6.98-6.96 (m, 1H), 6.94-6.89 (m, 2H), 6.85-6.83 (dd, 1H), 6.79-6.77 (m, 2H), 6.75 (d, 1H), 6.73 -6.70 (m, 2H), 1.66 (s, 6H)
除了使用中間物4-6而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.87 g之化合物 6(產率66%)。使用MS/FAB與1H NMR驗證化合物6。 4.87 g of Compound 6 (yield 66%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-6 was used instead of Intermediate 4-1. Compound 6 was verified using MS/FAB and 1 H NMR.
C55H35N3:計算值737.28,而實測737.29 C 55 H 35 N 3 : calculated value 737.28, while measured 737.29
1H NMR(CDCl3,400MHz)δ(ppm)8.07-8.05(m,1H),7.86-7.83(m,2H),7.81(d,1H),7.73-7.69(m,2H),7.68-7.64(m,2H),7.62-7.58(m,2H),7.50-7.44(m,6H),7.42-7.28(m,11H),7.26-7.23(m,2H),6.99-6.96(m,1H),6.90-6.86(m,2H),6.81-6.78(dd,1H),6.73-6.69(m,2H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.07-8.05 (m, 1H), 7.86-7.83 (m, 2H), 7.81 (d, 1H), 7.73-7.69 (m, 2H), 7.68-7.64 (m, 2H), 7.62-7.58 (m, 2H), 7.50-7.44 (m, 6H), 7.42-7.28 (m, 11H), 7.26-7.23 (m, 2H), 6.99-6.96 (m, 1H) , 6.90-6.86 (m, 2H), 6.81-6.78 (dd, 1H), 6.73-6.69 (m, 2H)
除了使用中間物4-7而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.82 g之化合物7(產率71%)。使用MS/FAB與1H NMR驗證化合物7。 4.82 g of Compound 7 (yield 71%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1 except that Intermediate 4-7 was used instead of Intermediate 4-1. Compound 7 was verified using MS/FAB and 1 H NMR.
C49H30N2S:計算值678.21,而實測678.22 C 49 H 30 N 2 S: calculated value 678.21, and measured 678.22
1H NMR(CDCl3,400MHz)δ(ppm)8.15-8.13(m,1H),8.09-8.06(m,1H),7.84-7.80(m,4H),7.72-7.69(m,2H),7.68-7.64(m,2H),7.61-7.58(m,2H),7.54-7.51(m,1H),7.47-7.41(m,2H),7.39-7.27(m,8H),7.16(d,1H),7.13-7.10(dd,1H),7.04-7.01(m,1H),6.93-6.90(m,2H),6.88-6.84(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.15-8.13 (m, 1H), 8.09-8.06 (m, 1H), 7.84-7.80 (m, 4H), 7.72-7.69 (m, 2H), 7.68 -7.64(m,2H), 7.61-7.58(m,2H),7.54-7.51(m,1H),7.47-7.41(m,2H),7.39-7.27(m,8H),7.16(d,1H) , 7.13-7.10 (dd, 1H), 7.04-7.01 (m, 1H), 6.93-6.90 (m, 2H), 6.88-6.84 (m, 2H)
除了使用中間物4-11而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.17 g之化合物11(產率62%)。使用MS/FAB與1H NMR驗證化合物11。 4.17 g of Compound 11 (yield 62%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1 except that Intermediate 4-11 was used instead of Intermediate 4-1. Compound 11 was verified using MS/FAB and 1 H NMR.
C48H29F2NO:計算值673.22,而實測673.21 C 48 H 29 F 2 NO: calculated value 673.22, and measured 673.21
1H NMR(CDCl3,400MHz)δ(ppm)7.87-7.85(m,1H),7.84-7.81(m, 3H),7.76-7.70(m,3H),7.68-7.66(dd,1H),7.65-7.64(m,1H),7.62-7.58(m,3H),7.55-7.50(m,3H),7.46-7.40(m,2H),7.37-7.29(m,5H),7.16-7.13(dd,1H),7.10-7.03(m,2H),6.98-6.93(m,2H),6.86-6.82(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.87-7.85 (m, 1H), 7.84-7.81 (m, 3H), 7.76-7.70 (m, 3H), 7.68-7.66 (dd, 1H), 7.65 -7.64 (m, 1H), 7.62-7.58 (m, 3H), 7.55-7.50 (m, 3H), 7.46-7.40 (m, 2H), 7.37-7.29 (m, 5H), 7.16-7.13 (dd, 1H), 7.10-7.03 (m, 2H), 6.98-6.93 (m, 2H), 6.86-6.82 (m, 2H)
除了使用中間物4-13而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.52g之化合物13(產率79%)。使用MS/FAB與1H NMR驗證化合物13。 In the same manner as the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-13 was used instead of Intermediate 4-1, 4.52 g of Compound 13 (yield: 79%) was prepared. Compound 13 was verified using MS/FAB and 1 H NMR.
C43H28N2:計算值572.23,而實測572.23 C 43 H 28 N 2 : calculated value 572.23, while measured 572.23
1H NMR(CDCl3,400MHz)δ(ppm)7.84-7.82(m,2H),7.80(d,1H),7.73-7.70(m,2H),7.67(d,1H),7.65(d,1H),7.62-7.58(m,2H),7.54-7.52(dd,1H),7.47-7.43(m,2H),7.38-7.29(m,7H),7.22-7.14(m,4H),7.11-7.06(m,1H),6.97-6.95(m,1H),6.89-6.86(m,1H),6.84-6.81(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.84-7.82 (m, 2H), 7.80 (d, 1H), 7.73-7.70 (m, 2H), 7.67 (d, 1H), 7.65 (d, 1H) ), 7.62-7.58 (m, 2H), 7.54-7.52 (dd, 1H), 7.47-7.43 (m, 2H), 7.38-7.29 (m, 7H), 7.22-7.14 (m, 4H), 7.11-7.06 (m, 1H), 6.97-6.95 (m, 1H), 6.89-6.86 (m, 1H), 6.84-6.81 (m, 2H)
除了使用中間物4-14而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.29 g之化合物14(產率75%)。使用MS/FAB與1H NMR驗證化合物14。 4.29 g of Compound 14 (yield 75%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-14 was used instead of Intermediate 4-1. Compound 14 was verified using MS/FAB and 1 H NMR.
C43H28N2:計算值572.23,而實測572.24 C 43 H 28 N 2 : calculated value 572.23, while measured 572.24
1H NMR(CDCl3,400MHz)δ(ppm)7.86-7.82(m,2H),7.81(d,1H),7.73-7.68(m,2H),7.66(d,1H),7.65(d,1H),7.61-7.57(m,2H),7.54-7.49(m,1H),7.46-7.42(m,1H),7.40-7.28(m,7H),7.22-7.17(m,4H),7.10-7.06(m,1H),6.98-6.95(m,2H),6.88-6.84(m,1H), 6.80-6.76(m,2H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 7.86-7.82 (m, 2H), 7.81 (d, 1H), 7.73-7.68 (m, 2H), 7.66 (d, 1H), 7.65 (d, 1H ), 7.61 - 7.57 (m, 2H), 7.54 - 7.49 (m, 1H), 7.46 - 7.42 (m, 1H), 7.40 - 7.28 (m, 7H), 7.22 - 7.17 (m, 4H), 7.10 - 7.06 (m, 1H), 6.98-6.95 (m, 2H), 6.88-6.84 (m, 1H), 6.80-6.76 (m, 2H)
除了使用中間物4-17而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.94 g之化合物17(產率73%)。使用MS/FAB與1H NMR驗證化合物17。 In the same manner as the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-17 was used instead of Intermediate 4-1, 4.94 g of Compound 17 (yield: 73%) was prepared. Compound 17 was verified using MS/FAB and 1 H NMR.
C43H28F3N:計算值615.22,而實測615.23 C 43 H 28 F 3 N: calculated value 615.22, and measured 615.23
1H NMR(CDCl3,400MHz)δ(ppm)7.85-7.81(m,2H),7.79(d,1H),7.74-7.69(m,2H),7.67(d,1H),7.66(d,1H),7.62-7.59(m,2H),7.56-7.48(m,3H),7.43-7.41(m,1H),7.34-7.23(m,5H),7.18-7.15(m,4H),7.06-7.03(m,1H),6.97-6.95(m,2H),6.86-6.83(m,1H),6.78-6.74(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.85-7.81 (m, 2H), 7.79 (d, 1H), 7.74-7.69 (m, 2H), 7.67 (d, 1H), 7.66 (d, 1H) ), 7.62-7.59 (m, 2H), 7.56-7.48 (m, 3H), 7.43-7.41 (m, 1H), 7.34-7.23 (m, 5H), 7.18-7.15 (m, 4H), 7.06-7.03 (m, 1H), 6.97-6.95 (m, 2H), 6.86-6.83 (m, 1H), 6.78-6.74 (m, 2H)
除了使用中間物4-18而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.81 g之化合物18(產率70%)。使用MS/FAB與1H NMR驗證化合物18。 In the same manner as the preparation of Compound 1 of Synthesis Example 1, except that the intermediate 4-18 was used instead of the intermediate 4-1, 5.81 g of Compound 18 (yield 70%) was prepared. Compound 18 was verified using MS/FAB and 1 H NMR.
C61H42N2Si:計算值830.31,而實測830.30 C 61 H 42 N 2 Si: calculated value 830.31, and measured 830.30
1H NMR(CDCl3,400MHz)δ(ppm)7.82-7.80(m,2H),7.79(d,1H),7.73-7.68(m,2H),7.66(d,1H),7.65(d,1H),7.60-7.55(m,8H),7.52-7.49(m,1H),7.45-7.42(m,1H),7.37-7.26(m,15H),7.24-7.20(m,3H),7.16-7.14(m,1H),7.06-7.02(m,2H),6.96-6.94(m,2H),6.80-6.76(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.82-7.80 (m, 2H), 7.79 (d, 1H), 7.73-7.68 (m, 2H), 7.66 (d, 1H), 7.65 (d, 1H) ), 7.60-7.55 (m, 8H), 7.52-7.49 (m, 1H), 7.45-7.42 (m, 1H), 7.37-7.26 (m, 15H), 7.24-7.20 (m, 3H), 7.16-7.14 (m, 1H), 7.06-7.02 (m, 2H), 6.96-6.94 (m, 2H), 6.80-6.76 (m, 2H)
除了使用中間物4-19而非中間物4-1外,以與合成 例1之化合物1之備製的方法相同之方式備製3.70 g之化合物19(產率58%)。使用MS/FAB與1H NMR驗證化合物19。 3.70 g of Compound 19 (yield 58%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1 except that Intermediate 4-19 was used instead of Intermediate 4-1. Compound 19 was verified using MS/FAB and 1 H NMR.
C42H24F5N:計算值637.18,而實測637.19 C 42 H 24 F 5 N: calculated value 637.18, and measured 637.19
1H NMR(CDCl3,400MHz)δ(ppm)7.85-7.83(m,2H),7.81(d,1H),7.75-7.71(m,2H),7.68(d,1H),7.66-62(m,3H),7.56-7.54(dd,1H),7.50-7.46(m,1H),7.40-7.31(m,5H),7.25-7.20(m,2H),7.12-7.09(m,1H),7.02-6.99(m,1H),6.92-6.88(m,4H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.85-7.83 (m, 2H), 7.81 (d, 1H), 7.75-7.71 (m, 2H), 7.68 (d, 1H), 7.66-62 (m) , 3H), 7.56-7.54 (dd, 1H), 7.50-7.46 (m, 1H), 7.40-7.31 (m, 5H), 7.25-7.20 (m, 2H), 7.12-7.09 (m, 1H), 7.02 -6.99(m,1H), 6.92-6.88(m,4H)
除了使用中間物4-20而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.54 g之化合物20(產率76%)。使用MS/FAB與1H NMR驗證化合物20。 In the same manner as the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-20 was used instead of Intermediate 4-1, 4.54 g of Compound 20 (yield 76%) was prepared. Compound 20 was verified using MS/FAB and 1 H NMR.
C44H27N3:計算值597.22,而實測597.23 C 44 H 27 N 3 : calculated value 597.22, and measured 597.23
1H NMR(CDCl3,400MHz)δ(ppm)7.83-7.81(m,2H),7.80(d,1H),7.72-7.69(m,2H),7.67(d,1H),7.66(d,1H),7.62-7.58(m,2H),7.54-7.51(m,1H),7.47-7.43(m,1H),7.40-7.28(m,9H),7.13-7.10(m,1H),7.02-6.99(m,4H),6.89-6.85(m,2H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 7.83-7.81 (m, 2H), 7.80 (d, 1H), 7.72-7.69 (m, 2H), 7.67 (d, 1H), 7.66 (d, 1H ), 7.62 - 7.58 (m, 2H), 7.54 - 7.51 (m, 1H), 7.47 - 7.43 (m, 1H), 7.40 - 7.28 (m, 9H), 7.13 - 7.10 (m, 1H), 7.02 - 6.99 (m, 4H), 6.89-6.85 (m, 2H)
除了使用中間物4-21而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製3.44 g之化合物21(產率59%)。使用MS/FAB與1H NMR驗證化合物21。 3.44 g of Compound 21 (yield 59%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1 except that Intermediate 4-21 was used instead of Intermediate 4-1. Compound 21 was verified using MS/FAB and 1 H NMR.
C42H27F2N:計算值583.21,而實測583.22 C 42 H 27 F 2 N: calculated value 583.21, and measured 583.22
1H NMR(CDCl3,400MHz)δ(ppm)7.84-7.82(m,2H),7.81(d,1H),7.74-7.70(m,2H),7.68(d,1H),7.67(d,1H),7.64-7.61(m,2H), 7.55-7.52(dd,1H),7.48-7.44(m,1H),7.37-7.30(m,5H),7.23-7.20(m,4H),7.15-7.09(m,5H),7.04-7.00(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.84-7.82 (m, 2H), 7.81 (d, 1H), 7.74-7.70 (m, 2H), 7.68 (d, 1H), 7.67 (d, 1H) ), 7.64-7.61 (m, 2H), 7.55-7.52 (dd, 1H), 7.48-7.44 (m, 1H), 7.37-7.30 (m, 5H), 7.23-7.20 (m, 4H), 7.15-7.09 (m, 5H), 7.04-7.00 (m, 2H)
除了使用中間物4-22而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.03 g之化合物22(產率56%)。使用MS/FAB與1H NMR驗證化合物22。 In the same manner as the preparation of Compound 1 of Synthesis Example 1, except that the intermediate 4-22 was used instead of the intermediate 4-1, 4.03 g of Compound 22 (yield 56%) was prepared. Compound 22 was verified using MS/FAB and 1 H NMR.
C51H33FN4:計算值720.27,而實測720.28 C 51 H 33 FN 4 : calculated value 720.27, and measured 720.28
1H NMR(CDCl3,400MHz)δ(ppm)8.52-8.47(m,4H),7.87-7.82(m,5H),7.76-7.73(m,2H),7.70(d,1H),7.68(d,1H),7.62-7.56(m,5H),7.50-7.46(m,1H),7.44-7.31(m,7H),7.24-7.18(m,2H),7.13-7.09(m,2H),7.00-6.98(m,1H),6.85-6.82(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.52-8.47 (m, 4H), 7.87-7.82 (m, 5H), 7.76-7.73 (m, 2H), 7.70 (d, 1H), 7.68 (d) , 1H), 7.62-7.56 (m, 5H), 7.50-7.46 (m, 1H), 7.44-7.31 (m, 7H), 7.24-7.18 (m, 2H), 7.13-7.09 (m, 2H), 7.00 -6.98(m,1H), 6.85-6.82(m,2H)
除了使用中間物4-23而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.35 g之化合物23(產率70%)。使用MS/FAB與1H NMR驗證化合物23。 5.35 g of Compound 23 (yield 70%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-23 was used instead of Intermediate 4-1. Compound 23 was verified using MS/FAB and 1 H NMR.
C56H36N4:計算值764.29,而實測764.28 C 56 H 36 N 4 : calculated 764.29, and measured 764.28
1H NMR(CDCl3,400MHz)δ(ppm)7.85-7.82(m,3H),7.81-7.77(m,3H),7.74-7.70(m,2H),7.69-7.67(m,1H),7.66-7.65(m,2H),7.61-7.52(m,5H),7.47-7.30(m,12H),7.27-7.23(m,1H),7.12-7.10(m,1H),7.02-6.98(m,4H),6.93-6.91(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.85-7.82 (m, 3H), 7.81-7.77 (m, 3H), 7.74-7.70 (m, 2H), 7.69-7.67 (m, 1H), 7.66 -7.65 (m, 2H), 7.61 - 7.52 (m, 5H), 7.47-7.30 (m, 12H), 7.27-7.23 (m, 1H), 7.12-7.10 (m, 1H), 7.02-6.98 (m, 4H), 6.93-6.91 (m, 2H)
除了使用中間物4-24而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.74 g之化合物 24(產率76%)。使用MS/FAB與1H NMR驗證化合物24。 In the same manner as the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-24 was used instead of Intermediate 4-1, 4.74 g of Compound 24 (yield 76%) was prepared. Compound 24 was verified using MS/FAB and 1 H NMR.
C47H32N2:計算值624.26,而實測624.25 C 47 H 32 N 2 : calculated value 624.26, and measured 624.25
1H NMR(CDCl3,400MHz)δ(ppm)8.49-8.46(m,1H),7.84-7.78(m,5H),7.76-7.68(m,3H),7.67-7.64(m,3H),7.62-7.59(m,2H),7.55-7.53(m,1H),7.48-7.45(m,1H),7.39-7.28(m,6H),7.23-7.19(m,4H),7.11-7.09(m,1H),7.02-6.98(m,3H),6.90-6.86(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.49-8.46 (m, 1H), 7.84-7.78 (m, 5H), 7.76-7.68 (m, 3H), 7.67-7.64 (m, 3H), 7.62 -7.59 (m, 2H), 7.55-7.53 (m, 1H), 7.48-7.45 (m, 1H), 7.39-7.28 (m, 6H), 7.23-7.19 (m, 4H), 7.11-7.09 (m, 1H), 7.02-6.98 (m, 3H), 6.90-6.86 (m, 2H)
除了使用中間物4-25而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.93 g之化合物25(產率79%)。使用MS/FAB與1H NMR驗證化合物25。 4.93 g of Compound 25 (yield 79%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-25 was used instead of Intermediate 4-1. Compound 25 was verified using MS/FAB and 1 H NMR.
C47H32N2:計算值624.26,而實測624.25 C 47 H 32 N 2 : calculated value 624.26, and measured 624.25
1H NMR(CDCl3,400MHz)δ(ppm)8.69(d,1H),8.46-8.42(m,1H),7.91-7.97(m,1H),7.86-7.81(m,3H),7.75-7.70(m,2H),7.69-7.66(m,2H),7.63-7.60(m,2H),7.57-7.54(m,1H),7.51-7.47(m,2H),7.40-7.29(m,7H),7.15-7.10(m,4H),6.98-6.91(m,3H),6.87-6.85(m,1H),6.82-6.78(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.69 (d, 1H), 8.46-8.42 (m, 1H), 7.91-7.97 (m, 1H), 7.86-7.81 (m, 3H), 7.75-7.70 (m, 2H), 7.69-7.66 (m, 2H), 7.63-7.60 (m, 2H), 7.57-7.54 (m, 1H), 7.51-7.47 (m, 2H), 7.40-7.29 (m, 7H) , 7.15-7.10(m,4H), 6.98-6.91(m,3H), 6.87-6.85(m,1H),6.82-6.78(m,2H)
除了使用中間物4-26而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.99 g之化合物26(產率80%)。使用MS/FAB與1H NMR驗證化合物26。 In the same manner as the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-26 was used instead of Intermediate 4-1, 4.99 g of Compound 26 (yield 80%) was prepared. Compound 26 was verified using MS/FAB and 1 H NMR.
C47H32N2:計算值624.26,而實測624.25 C 47 H 32 N 2 : calculated value 624.26, and measured 624.25
1H NMR(CDCl3,400MHz)δ(ppm)8.56-8.53(m,2H),7.85-7.82(m,2H),7.80(d,1H),7.73-7.69(m,2H),7.68-7.66(m,1H),7.65(d, 1H),7.61-7.51(m,7H),7.47-7.44(m,1H),7.38-7.26(m,5H),7.18-7.13(m,4H),7.09-7.04(m,1H),6.93-6.88(m,3H),6.84-6.80(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.56-8.53 (m, 2H), 7.85-7.82 (m, 2H), 7.80 (d, 1H), 7.73-7.69 (m, 2H), 7.68-7.66 (m, 1H), 7.65 (d, 1H), 7.61-7.51 (m, 7H), 7.47-7.44 (m, 1H), 7.38-7.26 (m, 5H), 7.18-7.13 (m, 4H), 7.09 -7.04(m,1H),6.93-6.88(m,3H),6.84-6.80(m,2H)
除了使用中間物4-27而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.29 g之化合物27(產率66%)。使用MS/FAB與1H NMR驗證化合物27。 4.29 g of Compound 27 (yield 66%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1 except that Intermediate 4-27 was used instead of Intermediate 4-1. Compound 27 was verified using MS/FAB and 1 H NMR.
C48H31N3:計算值649.25,而實測649.26 C 48 H 31 N 3 : calculated value 649.25, and measured 649.26
1H NMR(CDCl3,400MHz)δ(ppm)8.72(d,1H),8.42-8.39(m,1H),7.95-7.92(m,1H),7.84-7.81(m,2H),7.79(d,1H),7.71-7.68(m,2H),7.66(d,1H),7.64(d,1H),7.62-7.57(m,2H),7.55-7.52(m,1H),7.49-7.44(m,2H),7.40-7.26(m,9H),7.11-7.06(m,1H),7.02-7.00(m,2H),6.93-6.89(m,2H),6.79-6.77(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.72 (d, 1H), 8.42-8.39 (m, 1H), 7.95-7.92 (m, 1H), 7.84-7.81 (m, 2H), 7.79 (d) , 1H), 7.71-7.68 (m, 2H), 7.66 (d, 1H), 7.64 (d, 1H), 7.62-7.57 (m, 2H), 7.55-7.52 (m, 1H), 7.49-7.44 (m , 2H), 7.40-7.26 (m, 9H), 7.11-7.06 (m, 1H), 7.02-7.00 (m, 2H), 6.93-6.89 (m, 2H), 6.79-6.77 (m, 2H)
除了使用中間物4-30而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.99 g之化合物30(產率74%)。使用MS/FAB與1H NMR驗證化合物30。 In the same manner as the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 4-30 was used instead of the intermediate 4-1, 4.99 g of Compound 30 (yield: 74%) was prepared. Compound 30 was verified using MS/FAB and 1 H NMR.
C51H34N2:計算值674.27,而實測674.26 C 51 H 34 N 2 : calculated value 674.27, while measured 674.26
1H NMR(CDCl3,400MHz)δ(ppm)8.74(d,1H),8.44-8.31(m,1H),8.12-8.08(dd,1H),7.94-7.90(m,1H),7.87-7.80(m,4H),7.75-7.71(m,2H),7.68(d,1H),7.65(d,1H),7.60-7.56(m,2H),7.54-7.52(m,1H),7.49-7.41(m,5H),7.38-7.21(m,8H),7.11-7.07(m,2H),7.03-7.00(m,3H),6.87-6.85(dd,1H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.74 (d, 1H), 8.44-8.31 (m, 1H), 8.12-8.08 (dd, 1H), 7.94-7.90 (m, 1H), 7.87-7. (m, 4H), 7.75-7.71 (m, 2H), 7.68 (d, 1H), 7.65 (d, 1H), 7.60-7.56 (m, 2H), 7.54-7.52 (m, 1H), 7.49-7.41 (m, 5H), 7.38-7.21 (m, 8H), 7.11-7.07 (m, 2H), 7.03-7.00 (m, 3H), 6.87-6.85 (dd, 1H)
除了使用中間物4-31而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.98 g之化合物31(產率80%)。使用MS/FAB與1H NMR驗證化合物31。 In the same manner as the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 4-31 was used instead of the intermediate 4-1, 4.98 g of Compound 31 (yield 80%) was prepared. Compound 31 was verified using MS/FAB and 1 H NMR.
C47H30N2:計算值622.24,而實測622.23 C 47 H 30 N 2 : calculated value 622.24, and measured 622.23
1H NMR(CDCl3,400MHz)δ(ppm)8.05-8.01(dd,1H),7.89-7.86(m,1H),7.84-7.80(m,3H),7.74-7.69(m,2H),7.67(d,1H),7.65(d,1H),7.59-7.56(m,2H),7.53-7.50(m,1H),7.48-7.41(m,4H),7.40-7.22(m,8H),7.13-7.09(m,2H),7.05-7.03(m,1H),6.96-6.93(dd,1H),6.88-6.84(m,2H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.05-8.01 (dd, 1H), 7.89-7.86 (m, 1H), 7.84-7.80 (m, 3H), 7.74-7.69 (m, 2H), 7.67 (d, 1H), 7.65 (d, 1H), 7.59-7.56 (m, 2H), 7.53-7.50 (m, 1H), 7.48-7.41 (m, 4H), 7.40-7.22 (m, 8H), 7.13 -7.09 (m, 2H), 7.05-7.03 (m, 1H), 6.96-6.93 (dd, 1H), 6.88-6.84 (m, 2H)
除了使用中間物4-32而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.40 g之化合物32(產率73%)。使用MS/FAB與1H NMR驗證化合物32。 5.40 g of Compound 32 (yield 73%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-32 was used instead of Intermediate 4-1. Compound 32 was verified using MS/FAB and 1 H NMR.
C56H40N2:計算值740.32,而實測740.31 C 56 H 40 N 2 : calculated value 740.32, and measured 740.31
1H NMR(CDCl3,400MHz)δ(ppm)8.76(d,1H),8.51-8.47(dd,1H),7.91-7.88(m,1H),7.83-7.79(m,3H),7.78-7.76(m,1H),7.73-7.69(m,2H),7.68(d,1H),7.66(d,1H),7.62-7.58(m,2H),7.56-7.51(m,2H),7.47-7.43(m,2H),7.39-7.26(m,8H),7.15-7.10(m,2H),7.06-7.04(m,1H),6.94-6.90(m,3H),6.87(d,1H),6.83-6.81(m,2H),1.67(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.76 (d, 1H), 8.51-8.47 (dd, 1H), 7.91-7.88 (m, 1H), 7.83-7.79 (m, 3H), 7.78-7.76 (m,1H), 7.73-7.69 (m, 2H), 7.68 (d, 1H), 7.66 (d, 1H), 7.62-7.58 (m, 2H), 7.56-7.51 (m, 2H), 7.47-7.43 (m, 2H), 7.39-7.26 (m, 8H), 7.15-7.10 (m, 2H), 7.06-7.04 (m, 1H), 6.94-6.90 (m, 3H), 6.87 (d, 1H), 6.83 -6.81(m,2H),1.67(s,6H)
除了使用中間物4-35而非中間物4-1外,以與合成 例1之化合物1之備製的方法相同之方式備製5.05 g之化合物35(產率67%)。使用MS/FAB與1H NMR驗證化合物35。 In the same manner as the preparation of Compound 1 of Synthesis Example 1, except that the intermediate 4-35 was used instead of the intermediate 4-1, 5.05 g of Compound 35 (yield 67%) was prepared. Compound 35 was verified using MS/FAB and 1 H NMR.
C58H38N2O:計算值778.30,而實測778.29 C 58 H 38 N 2 O: calculated 778.30, and measured 778.29
1H NMR(CDCl3,400MHz)δ(ppm)7.84-7.80(m,4H),7.78-7.76(m,1H),7.74-7.65(m,6H),7.62-7.59(m,3H),7.55-7.49(m,4H),7.46-7.40(m,3H),7.38-7.27(m,5H),7.19-7.11(m,2H),7.05(d,1H),6.87(d,1H),6.79-6.74(m,2H),1.64(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.84-7.80 (m, 4H), 7.78-7.76 (m, 1H), 7.74-7.65 (m, 6H), 7.62-7.59 (m, 3H), 7.55 -7.49 (m, 4H), 7.46-7.40 (m, 3H), 7.38-7.27 (m, 5H), 7.19-7.11 (m, 2H), 7.05 (d, 1H), 6.87 (d, 1H), 6.79 -6.74(m,2H),1.64(s,6H)
除了使用中間物4-36而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.80 g之化合物36(產率70%)。使用MS/FAB與1H NMR驗證化合物36。 5.80 g of Compound 36 (yield 70%) was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 4-36 was used instead of Intermediate 4-1. Compound 36 was verified using MS/FAB and 1 H NMR.
C63H44N2:計算值828.35,而實測828.34 C 63 H 44 N 2 : calculated value 828.35, and measured 828.34
1H NMR(CDCl3,400MHz)δ(ppm)8.08-8.04(m,2H),7.85-7.82(m,2H),7.81(d,1H),7.77-7.75(m,1H),7.72-7.68(m,2H),7.68(d,1H),7.66(d,1H),7.62-7.58(m,2H),7.56-7.52(m,2H),7.47-7.43(m,1H),7.36-7.26(m,12H),7.15-7.10(m,4H),7.04-7.02(m,1H),6.99-6.91(m,3H),6.89(d,1H),6.85-6.81(m,2H),1.65(s,6H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.08-8.04 (m, 2H), 7.85-7.82 (m, 2H), 7.81 (d, 1H), 7.77-7.75 (m, 1H), 7.72-7.68 (m, 2H), 7.68 (d, 1H), 7.66 (d, 1H), 7.62-7.58 (m, 2H), 7.56-7.52 (m, 2H), 7.47-7.43 (m, 1H), 7.36-7.26 (m, 12H), 7.15-7.10 (m, 4H), 7.04-7.02 (m, 1H), 6.99-6.91 (m, 3H), 6.89 (d, 1H), 6.85-6.81 (m, 2H), 1.65 (s, 6H)
除了使用中間物4-38而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.04 g之化合物38(產率75%)。使用MS/FAB與1H NMR驗證化合物38。 In the same manner as the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 4-38 was used instead of the intermediate 4-1, 5.04 g of Compound 38 (yield: 75%) was prepared. Compound 38 was verified using MS/FAB and 1 H NMR.
C51H32N2:計算值672.26,而實測672.25 C 51 H 32 N 2 : calculated value 672.26, and measured 672.25
1H NMR(CDCl3,400MHz)δ(ppm)8.50-8.47(m,1H),8.16-8.12(m, 1H),7.96-7.92(m,1H),7.86-7.82(m,2H),7.80(d,1H),7.73-7.69(m,4H),7.67(d,1H),7.65(d,1H),7.60-7.52(m,5H),7.47-7.41(m,2H),7.39-7.28(m,8H),7.22-7.18(m,2H),7.07-7.03(m,1H),6.97-6.95(m,2H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.50-8.47 (m, 1H), 8.16-8.12 (m, 1H), 7.96-7.92 (m, 1H), 7.86-7.82 (m, 2H), 7.80 (d,1H), 7.73-7.69 (m, 4H), 7.67 (d, 1H), 7.65 (d, 1H), 7.60-7.52 (m, 5H), 7.47-7.41 (m, 2H), 7.39-7.28 (m, 8H), 7.22-7.18 (m, 2H), 7.07-7.03 (m, 1H), 6.97-6.95 (m, 2H)
除了使用中間物2-42而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-42。 The intermediate 3 - 42 was prepared in the same manner as the preparation of the intermediate 3-1 of Synthesis Example 1, except that the intermediate 2 - 42 was used instead of the intermediate 2-1.
除了使用中間物3-42與中間物4-27而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.54 g之化合物42(產率65%)。使用MS/FAB與1H NMR驗證化合物42。 4.54 g of the compound was prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-42 and the intermediate 4-27 were used instead of the intermediate 3-1 and the intermediate 4-1. 42 (yield 65%). Compound 42 was verified using MS/FAB and 1 H NMR.
C52H33N3:計算值699.27,而實測699.28 C 52 H 33 N 3 : calculated value 699.27, and measured 699.28
1H NMR(CDCl3,400MHz)δ(ppm)8.78(d,1H),8.45-8.42(m,1H),8.11-8.08(m,1H),7.94-7.91(m,1H),7.89-7.86(m,1H),7.83-7.80(m,2H),7,78(d,1H),7.72-7.67(m,3H),7.65-7.62(dd,1H),7.58-7.55(m,3H),7.54-7.52(m,1H),7.48-7.43(m,2H),7.40-7.33(m,5H),7.31-7.27(m,4H),7.18-7.15(dd,1H),6.99-6.95(m,1H),6.82-6.79(m,2H),6.77-6.73(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.78 (d, 1H), 8.45-8.42 (m, 1H), 8.11-8.08 (m, 1H), 7.94-7.91 (m, 1H), 7.89-7.86 (m, 1H), 7.83-7.80 (m, 2H), 7, 78 (d, 1H), 7.72-7.67 (m, 3H), 7.65-7.62 (dd, 1H), 7.58-7.55 (m, 3H) , 7.54-7.52 (m, 1H), 7.48-7.43 (m, 2H), 7.40-7.33 (m, 5H), 7.31-7.27 (m, 4H), 7.18-7.15 (dd, 1H), 6.99-6.95 ( m,1H),6.82-6.79(m,2H),6.77-6.73(m,2H)
除了使用中間物4-43而非中間物4-27外,以與合成例27之化合物42之備製的方法相同之方式備製5.24 g之化合 物43(產率71%)。使用MS/FAB與1H NMR驗證化合物43。 5.24 g of Compound 43 (yield 71%) was prepared in the same manner as in the preparation of Compound 42 of Synthesis Example 27 except for using Intermediate 4-43 instead of Intermediate 4-27. Compound 43 was verified using MS/FAB and 1 H NMR.
C56H38N2:計算值738.30,而實測738.31 C 56 H 38 N 2 : calculated value 738.30, and measured 738.31
1H NMR(CDCl3,400MHz)δ(ppm)8.10-8.08(m,1H),7.90-7.87(m,1H),7.85-7.82(m,2H),7.80(d,1H),7.78-7.75(m,1H),7.71-7.65(m,4H),7.59-7.57(m,1H),7.55-7.51(m,4H),7.46-7.42(m,1H),7.39-7.27(m,8H),7.16-7.10(m,3H),6.97-6.93(m,1H),6.89-6.86(m,2H),6.83-6.81(dd,1H),6.79(d,1H),1.66(s,6H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.10-8.08 (m, 1H), 7.90-7.87 (m, 1H), 7.85-7.82 (m, 2H), 7.80 (d, 1H), 7.78-7.75 (m, 1H), 7.71-7.65 (m, 4H), 7.59-7.57 (m, 1H), 7.55-7.51 (m, 4H), 7.46-7.42 (m, 1H), 7.39-7.27 (m, 8H) , 7.16-7.10 (m, 3H), 6.97-6.93 (m, 1H), 6.89-6.86 (m, 2H), 6.83-6.81 (dd, 1H), 6.79 (d, 1H), 1.66 (s, 6H)
除了使用中間物2-45而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-45。 The intermediate 3-45 was prepared in the same manner as in the preparation of the intermediate 3-1 of Synthesis Example 1, except that the intermediate 2-45 was used instead of the intermediate 2-1.
除了使用中間物3-45與中間物4-31而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.38 g之化合物45(產率80%)。使用MS/FAB與1H NMR驗證化合物45。 5.38 g of the compound was prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-45 and the intermediate 4-31 were used instead of the intermediate 3-1 and the intermediate 4-1. 45 (yield 80%). Compound 45 was verified using MS/FAB and 1 H NMR.
C51H32N2:計算值672.26,而實測672.27 C 51 H 32 N 2 : calculated value 672.26, and measured 672.27
1H NMR(CDCl3,400MHz)δ(ppm)8.03-8.00(m,1H),7.88-7.85(m,1H),7.84-7.79(m,5H),7.73-7.68(m,2H),7.65-7.63(m,1H),7.60(d,1H),7.55-7.37(m,9H),7.35-7.28(m,5H),7.20-7.15(m,2H),7.10-7.06(m,1H),6.97-6.92(m,1H),6.86-6.85(dd,1H),6.80-6.77(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.03-8.00 (m, 1H), 7.88-7.85 (m, 1H), 7.84-7.79 (m, 5H), 7.73-7.68 (m, 2H), 7.65 -7.63 (m, 1H), 7.60 (d, 1H), 7.55-7.37 (m, 9H), 7.35-7.28 (m, 5H), 7.20-7.15 (m, 2H), 7.10-7.06 (m, 1H) , 6.97-6.92 (m, 1H), 6.86-6.85 (dd, 1H), 6.80-6.77 (m, 2H)
除了使用中間物4-48而非中間物4-31外,以與合成例29之化合物45之備製的方法相同之方式備製5.50 g之化合物48(產率76%)。使用MS/FAB與1H NMR驗證化合物48。 5.50 g of Compound 48 (yield 76%) was prepared in the same manner as in the preparation of Compound 45 of Synthesis Example 29 except for using Intermediate 4-48 instead of Intermediate 4-31. Compound 48 was verified using MS/FAB and 1 H NMR.
C55H36N2:計算值724.29,而實測724.30 C 55 H 36 N 2 : calculated value 724.29, while measured 724.30
1H NMR(CDCl3,400MHz)δ(ppm)8.56-8.53(dd,1H),8.06-8.03(m,1H),7.85-7.78(m,6H),7.76-7.69(m,5H),7.66-7.60(m,3H),7.55-7.40(m,7H),7.36-7.32(m,5H),7.29-7.25(m,1H),7.21-7.17(m,2H),7.11-7.07(m,1H),6.99-6.94(m,1H),6.87-6.85(dd,1H),6.82-6.79(m,2H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.56-8.53 (dd, 1H), 8.06-8.03 (m, 1H), 7.85-7.78 (m, 6H), 7.76-7.69 (m, 5H), 7.66 - 7.60 (m, 3H), 7.55-7.40 (m, 7H), 7.36-7.32 (m, 5H), 7.29-7.25 (m, 1H), 7.21-7.17 (m, 2H), 7.11-7.07 (m, 1H), 6.99-6.94 (m, 1H), 6.87-6.85 (dd, 1H), 6.82-6.79 (m, 2H)
除了使用中間物2-51而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-51。 The intermediate 3-51 was prepared in the same manner as the preparation of the intermediate 3-1 of Synthesis Example 1, except that the intermediate 2-51 was used instead of the intermediate 2-1.
除了使用中間物3-51與中間物4-4而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.29g之化合物51(產率66%)。使用MS/FAB與1H NMR驗證化合物51。 4.29 g of the compound was prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-51 and the intermediate 4-4 were used instead of the intermediate 3-1 and the intermediate 4-1. 51 (yield 66%). Compound 51 was verified using MS/FAB and 1 H NMR.
C48H31N3:計算值649.25,而實測649.26 C 48 H 31 N 3 : calculated value 649.25, and measured 649.26
1H NMR(CDCl3,400MHz)δ(ppm)8.50(d,1H),7.93-7.90(m,2H),7.89-7.87(m,2H),7.85(d,1H),7.84-7.81(m,1H),7.74-7.69(m,2H),7.65-7.61(m,2H),7.56-7.49(m,5H),7.46-7.37(m,6H),7.36-7.34(m,1H),7.32-7.27(m,2H),7.14-7.10(m,2H),6.99-6.94 (m,2H),6.83-6.79(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.50 (d, 1H), 7.93-7.90 (m, 2H), 7.89-7.87 (m, 2H), 7.85 (d, 1H), 7.84-7.81 (m) , 1H), 7.74-7.69 (m, 2H), 7.65-7.61 (m, 2H), 7.56-7.49 (m, 5H), 7.46-7.37 (m, 6H), 7.36-7.34 (m, 1H), 7.32 -7.27(m,2H),7.14-7.10(m,2H),6.99-6.94 (m,2H),6.83-6.79(m,2H)
除了使用中間物4-27而非中間物4-4外,以與合成例31之化合物51之備製的方法相同之方式備製4.23g之化合物54(產率65%)。使用MS/FAB與1H NMR驗證化合物54。 4.23 g of Compound 54 (yield 65%) was prepared in the same manner as in the preparation of Compound 51 of Synthesis Example 31, except that Intermediate 4-27 was used instead of Intermediate 4-4. Compound 54 was verified using MS/FAB and 1 H NMR.
C47H30N4:計算值650.25,而實測650.24 C 47 H 30 N 4 : calculated value 650.25, while measured 650.24
1H NMR(CDCl3,400MHz)δ(ppm)8.73(m,1H),8.55(d,1H),8.52-8.47(m,1H),7.96-7.88(m,5H),7.86(d,1H),7.84-7.81(m,1H),7.73-7.68(m,2H),7.56-7.53(m,1H),7.49-7.38(m,6H),7.36-7.28(m,5H),7.16-7.13(m,2H),7.00-6.95(m,2H),6.89-6.85(m,2H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.73 (m, 1H), 8.55 (d, 1H), 8.52-8.47 (m, 1H), 7.96-7.88 (m, 5H), 7.86 (d, 1H ), 7.84-7.81 (m, 1H), 7.73-7.68 (m, 2H), 7.56-7.53 (m, 1H), 7.49-7.38 (m, 6H), 7.36-7.28 (m, 5H), 7.16-7.13 (m, 2H), 7.00-6.95 (m, 2H), 6.89-6.85 (m, 2H)
除了使用中間物2-57而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-57。 The intermediates 3-57 were prepared in the same manner as in the preparation of the intermediate 3-1 of Synthesis Example 1, except that the intermediate 2-57 was used instead of the intermediate 2-1.
除了使用中間物3-57與中間物4-32而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.97 g之化合物57(產率67%)。使用MS/FAB與1H NMR驗證化合物57。 4.97 g of the compound was prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-57 and the intermediate 4-32 were used instead of the intermediate 3-1 and the intermediate 4-1. 57 (yield 67%). Compound 57 was verified using MS/FAB and 1 H NMR.
C55H39N3:計算值741.31,而實測741.32 C 55 H 39 N 3 : calculated value 741.31, and measured 741.32
1H NMR(CDCl3,400MHz)δ(ppm)8.77(dd,1H),8.52(d,1H), 8.23-8.20(m,1H),7.93-7.90(m,1H),7.89(d,1H),7.87(d,1H),7.85-7.82(m,1H),7.78-7.75(m,1H),7.72-7.68(m,2H),7.53-7.44(m,6H),7.42-7.23(m,9H),7.14-7.09(m,2H),6.99-6.95(m,1H),6.87-6.83(m,4H),6.78(d,1H),1.63(s,6H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.77 (dd, 1H), 8.52 (d, 1H), 8.23-8.20 (m, 1H), 7.93-7.90 (m, 1H), 7.89 (d, 1H ), 7.87(d,1H), 7.85-7.82(m,1H), 7.78-7.75(m,1H),7.72-7.68(m,2H),7.53-7.44(m,6H),7.42-7.23(m , 9H), 7.14-7.09 (m, 2H), 6.99-6.95 (m, 1H), 6.87-6.83 (m, 4H), 6.78 (d, 1H), 1.63 (s, 6H)
除了使用中間物2-58而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-58。 Intermediates 3-58 were prepared in the same manner as in the preparation of Intermediate 3-1 of Synthesis Example 1, except that Intermediate 2-58 was used instead of Intermediate 2-1.
除了使用中間物3-58與中間物4-25而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.67 g之化合物58(產率81%)。使用MS/FAB與1H NMR驗證化合物58。 5.67 g of the compound was prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-58 and the intermediate 4-25 were used instead of the intermediate 3-1 and the intermediate 4-1. 58 (yield 81%). Compound 58 was verified using MS/FAB and 1 H NMR.
C53H36N2:計算值700.29,而實測700.30 C 53 H 36 N 2 : calculated value 700.29, while measured 700.30
1H NMR(CDCl3,400MHz)δ(ppm)8.74(dd,1H),8.51-8.48(m,1H),7.94-7.90(m,1H),7.83-7.77(m,5H),7.74-7.65(m,6H),7.55-7.52(m,1H),7.48-7.44(m,4H),7.38-7.25(m,7H),7.19-7.15(m,2H),7.08-7.03(m,3H),6.96-6.92(m,2H),6.86-6.83(m,1H),6.80-6.79(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.74 (dd, 1H), 8.51-8.48 (m, 1H), 7.94-7.90 (m, 1H), 7.83-7.77 (m, 5H), 7.74-7.65 (m, 6H), 7.55-7.52 (m, 1H), 7.48-7.44 (m, 4H), 7.38-7.25 (m, 7H), 7.19-7.15 (m, 2H), 7.08-7.03 (m, 3H) , 6.96-6.92 (m, 2H), 6.86-6.83 (m, 1H), 6.80-6.79 (m, 2H)
除了使用中間物4-24而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.46 g之化合物59(產率78%)。使用MS/FAB與1H NMR驗證化合物59。 5.46 g of Compound 59 (yield 78%) was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34, except that Intermediate 4-24 was used instead of Intermediate 4-25. Compound 59 was verified using MS/FAB and 1 H NMR.
C53H36N2:計算值700.29,而實測700.29 C 53 H 36 N 2 : calculated value 700.29, while measured 700.29
1H NMR(CDCl3,400MHz)δ(ppm)8.58-8.54(m,1H),7.86-7.80(m,7H),7.78-7.70(m,5H),7.68-7.65(m,3H),7.54-7.51(m,1H),7.47-7.44(m,3H),7.37-7.26(m,6H),7.17-7.13(m,2H),7.09-7.07(m,1H),7.01-6.97(m,2H),6.98-6.93(m,3H),6.84-6.81(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.58-8.54 (m, 1H), 7.86-7.80 (m, 7H), 7.78-7.70 (m, 5H), 7.68-7.65 (m, 3H), 7.54 -7.51 (m, 1H), 7.47-7.44 (m, 3H), 7.37-7.26 (m, 6H), 7.17-7.13 (m, 2H), 7.09-7.07 (m, 1H), 7.01-6.97 (m, 2H), 6.98-6.93 (m, 3H), 6.84-6.81 (m, 2H)
除了使用中間物4-27而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.08 g之化合物60(產率70%)。使用MS/FAB與1H NMR驗證化合物60。 In the same manner as the preparation of the compound 58 of Synthesis Example 34, 5.08 g of Compound 60 (yield 70%) was prepared, except that Intermediate 4-27 was used instead of Intermediate 4-25. Compound 60 was verified using MS/FAB and 1 H NMR.
C54H35N3:計算值725.28,而實測725.27 C 54 H 35 N 3 : calculated value 725.28, and measured 725.27
1H NMR(CDCl3,400MHz)δ(ppm)8.71-8.69(m,1H),8.44-8.41(m,1H),7.93-7.91(m,1H),7.84-7.78(m,5H),7.74-7.69(m,4H),7.68-7.65(m,2H),7.55-7.52(m,1H),7.48-7.43(m,4H),7.39-7.24(m,9H),7.12-7.11(m,1H),7.03-6.99(m,2H),6.93-6.89(m,2H),6.82-6.80(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.71 - 8.69 (m, 1H), 8.44 - 8.41 (m, 1H), 7.93 - 7.91 (m, 1H), 7.84 - 7.78 (m, 5H), 7.74 - 7.69 (m, 4H), 7.68-7.65 (m, 2H), 7.55-7.52 (m, 1H), 7.48-7.43 (m, 4H), 7.39-7.24 (m, 9H), 7.12-7.11 (m, 1H), 7.03-6.99 (m, 2H), 6.93-6.89 (m, 2H), 6.82-6.80 (m, 2H)
除了使用中間物4-32而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製6.04 g之化合物61(產率74%)。使用MS/FAB與1H NMR驗證化合物61。 In the same manner as the preparation of Compound 58 of Synthesis Example 34, 6.04 g of Compound 61 (yield: 74%) was obtained, except that Intermediate 4-32 was used instead of Intermediate 4-25. Compound 61 was verified using MS/FAB and 1 H NMR.
C62H44N2:計算值816.35,而實測816.34 C 62 H 44 N 2 : calculated value 816.35, and measured 816.34
1H NMR(CDCl3,400MHz)δ(ppm)8.69-8.67(dd,1H),8.41-8.38(m,1H),7.91-7.88(m,1H),7.83-7.76(m,6H),7.74-7.68(m,4H),7.67-7.64(m,2H),7.56-7.51(m,2H),7.47-7.44(m,4H),7.37-7.25 (m,8H),7.15-7.09(m,2H),6.99-6.94(m,1H),6.90-6.86(m,3H),6.83-6.79(m,2H),6.77-6.76(m,1H),1.64(s,6H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.69-8.67 (dd, 1H), 8.41-8.38 (m, 1H), 7.91-7.88 (m, 1H), 7.83-7.76 (m, 6H), 7.74 -7.68 (m, 4H), 7.67-7.64 (m, 2H), 7.56-7.51 (m, 2H), 7.47-7.44 (m, 4H), 7.37-7.25 (m, 8H), 7.15-7.09 (m, 2H), 6.99-6.94 (m, 1H), 6.90-6.86 (m, 3H), 6.83-6.79 (m, 2H), 6.77-6.76 (m, 1H), 1.64 (s, 6H)
除了使用中間物4-30而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.93 g之化合物62(產率79%)。使用MS/FAB與1H NMR驗證化合物62。 5.93 g of Compound 62 (yield 79%) was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34 except for using Intermediate 4-30 instead of Intermediate 4-25. Compound 62 was verified using MS/FAB and 1 H NMR.
C57H38N2:計算值750.30,而實測750.29 C 57 H 38 N 2 : calculated value 750.30, while measured 750.29
1H NMR(CDCl3,400MHz)δ(ppm)8.51-8.48(m,2H),8.17-8.15(dd,1H),7.87-7.78(m,6H),7.74-7.65(m,6H),7.55-7.51(m,5H),7.48-7.40(m,6H),7.38-7.28(m,5H),7.23(t,1H),7.14-7.13(m,1H),7.06-7.02(m,2H),6.95-6.93(dd,1H),6.88-6.85(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.51-8.48 (m, 2H), 8.17-8.15 (dd, 1H), 7.87-7.78 (m, 6H), 7.74-7.65 (m, 6H), 7.55 -7.51 (m, 5H), 7.48-7.40 (m, 6H), 7.38-7.28 (m, 5H), 7.23 (t, 1H), 7.14-7.13 (m, 1H), 7.06-7.02 (m, 2H) , 6.95-6.93 (dd, 1H), 6.88-6.85 (m, 2H)
除了使用中間物4-63而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.85 g之化合物63(產率78%)。使用MS/FAB與1H NMR驗證化合物63。 5.85 g of Compound 63 (yield 78%) was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34, except that Intermediate 4-63 was used instead of Intermediate 4-25. Compound 63 was verified using MS/FAB and 1 H NMR.
C57H38N2:計算值750.30,而實測750.31 C 57 H 38 N 2 : calculated value 750.30, and measured 750.31
1H NMR(CDCl3,400MHz)δ(ppm)8.50-8.47(m,2H),8.15-8.13(dd,1H),7.86-7.77(m,6H),7.73-7.69(m,4H),7.68-7.65(m,2H),7.56-7.52(m,5H),7.49-7.39(m,6H),7.37-7.29(m,5H),7.22(t,1H),7.18-7.16(m,1H),7.11-7.07(m,2H),6.96-6.94(dd,1H),6.89-6.86(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.50-8.47 (m, 2H), 8.15-8.13 (dd, 1H), 7.86-7.77 (m, 6H), 7.73-7.69 (m, 4H), 7.68 -7.65 (m, 2H), 7.56-7.52 (m, 5H), 7.49-7.39 (m, 6H), 7.37-7.29 (m, 5H), 7.22 (t, 1H), 7.18-7.16 (m, 1H) , 7.11-7.07 (m, 2H), 6.96-6.94 (dd, 1H), 6.89-6.86 (m, 2H)
除了使用中間物4-48而非中間物4-25外,以與合 成例34之化合物58之備製的方法相同之方式備製5.40 g之化合物64(產率72%)。使用MS/FAB與1H NMR驗證化合物64。 5.40 g of Compound 64 (yield 72%) was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34, except that Intermediate 4-48 was used instead of Intermediate 4-25. Compound 64 was verified using MS/FAB and 1 H NMR.
C57H38N2:計算值750.30,而實測750.31 C 57 H 38 N 2 : calculated value 750.30, and measured 750.31
1H NMR(CDCl3,400MHz)δ(ppm)8.48-8.45(m,1H),8.16-8.14(dd,1H),7.87-7.82(m,3H),7.81-7.68(m,10H),7.67-7.64(m,3H),7.54-7.51(m,1H),7.48-7.40(m,6H),7.38-7.21(m,7H),7.09-7.07(m,1H),7.01-6.99(m,2H),6.95-6.94(dd,1H),6.87-6.83(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.48-8.45 (m, 1H), 8.16-8.14 (dd, 1H), 7.87-7.82 (m, 3H), 7.81-7.68 (m, 10H), 7.67 -7.64 (m, 3H), 7.54-7.51 (m, 1H), 7.48-7.40 (m, 6H), 7.38-7.21 (m, 7H), 7.09-7.07 (m, 1H), 7.01-6.99 (m, 2H), 6.95-6.94 (dd, 1H), 6.87-6.83 (m, 2H)
除了使用中間物4-31而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.38 g之化合物66(產率77%)。使用MS/FAB與1H NMR驗證化合物66。 5.38 g of Compound 66 (yield 77%) was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34, except that Intermediate 4-31 was used instead of Intermediate 4-25. Compound 66 was verified using MS/FAB and 1 H NMR.
C53H34N2:計算值698.27,而實測698.28 C 53 H 34 N 2 : calculated value 698.27, and measured 698.28
1H NMR(CDCl3,400MHz)δ(ppm)8.06-8.04(dd,1H),7.88-7.85(m,1H),7.84-7.79(m,4H),7.78-7.76(m,1H),7.74-7.69(m,4H),7.67-7.64(m,2H),7.56-7.52(m,1H),7.48-7.29(m,13H),7.22(t,1H),7.13-7.11(m,1H),7.05-7.01(m,2H),6.96-6.94(dd,1H),6.87-6.84(m,2H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.06-8.04 (dd, 1H), 7.88-7.85 (m, 1H), 7.84-7.79 (m, 4H), 7.78-7.76 (m, 1H), 7.74 -7.69(m,4H), 7.67-7.64(m,2H), 7.56-7.52(m,1H), 7.48-7.29(m,13H),7.22(t,1H),7.13-7.11(m,1H) , 7.05-7.01 (m, 2H), 6.96-6.94 (dd, 1H), 6.87-6.84 (m, 2H)
除了使用中間物4-67而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.36 g之化合物67(產率74%)。使用MS/FAB與1H NMR驗證化合物67。 5.36 g of Compound 67 (yield 74%) was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34, except that Intermediate 4-67 was used instead of Intermediate 4-25. Compound 67 was verified using MS/FAB and 1 H NMR.
C55H36N2:計算值724.29,而實測724.30 C 55 H 36 N 2 : calculated value 724.29, while measured 724.30
1H NMR(CDCl3,400MHz)δ(ppm)7.85-7.82(m,2H),7.81-7.79(m, 2H),7.78-7.76(m,1H),7.73-7.68(m,4H),7.67(d,1H),7.65(d,1H),7.60-7.57(m,2H),7.54-7.52(dd,1H),7.48-7.28(m,13H),7.26-7.22(m,2H),7.16-7.15(m,1H),7.06-7.01(m,2H),6.94-6.90(m,2H),6.87-6.84(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.85-7.82 (m, 2H), 7.81-7.79 (m, 2H), 7.78-7.76 (m, 1H), 7.73-7.68 (m, 4H), 7.67 (d, 1H), 7.65 (d, 1H), 7.60-7.57 (m, 2H), 7.54-7.52 (dd, 1H), 7.48-7.28 (m, 13H), 7.26-7.22 (m, 2H), 7.16 -7.15 (m, 1H), 7.06-7.01 (m, 2H), 6.94-6.90 (m, 2H), 6.87-6.84 (m, 2H)
除了使用中間物4-68而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.45 g之化合物68(產率78%)。使用MS/FAB與1H NMR驗證化合物68。 In the same manner as the preparation of Compound 58 of Synthesis Example 34, 5.45 g of Compound 68 (yield 78%) was prepared, except for using Intermediate 4-68 instead of Intermediate 4-25. Compound 68 was verified using MS/FAB and 1 H NMR.
C53H34N2:計算值698.27,而實測698.28 C 53 H 34 N 2 : calculated value 698.27, and measured 698.28
1H NMR(CDCl3,400MHz)δ(ppm)7.86-7.83(m,2H),7.82-7.79(m,2H),7.78-7.76(m,2H),7.74-7.68(m,4H),7.66-7.63(m,3H),7.57-7.54(m,2H),7.53-7.50(m,2H),7.47-7.43(m,3H),7.41-7.28(m,8H),7.18-7.16(m,1H),7.06-7.05(dd,1H),6.92-6.88(m,2H),6.85-6.82(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.86-7.83 (m, 2H), 7.82-7.79 (m, 2H), 7.78-7.76 (m, 2H), 7.74-7.68 (m, 4H), 7.66 -7.63 (m, 3H), 7.57-7.54 (m, 2H), 7.53-7.50 (m, 2H), 7.47-7.43 (m, 3H), 7.41-7.28 (m, 8H), 7.18-7.16 (m, 1H), 7.06-7.05 (dd, 1H), 6.92-6.88 (m, 2H), 6.85-6.82 (m, 2H)
除了使用中間物4-70而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製3.56 g之化合物70(產率53%)。使用MS/FAB與1H NMR驗證化合物70。 In the same manner as the preparation of the compound 58 of Synthesis Example 34, 3.56 g of Compound 70 (yield: 53%) was prepared, except that Intermediate 4-70 was used instead of Intermediate 4-25. Compound 70 was verified using MS/FAB and 1 H NMR.
C50H29N3:計算值671.24,而實測671.23 C 50 H 29 N 3 : calculated value 671.24, and measured 671.23
1H NMR(CDCl3,400MHz)δ(ppm)8.22-8.20(m,2H),7.92-7.88(m,2H),7.85-7.82(m,2H),7.80(d,1H),7.75-7.69(m,4H),7.67-7.66(dd,1H),7.65-7.63(m,2H),7.61(d,1H),7.55-7.53(dd,1H),7.49-7.42(m,7H),7.38-7.29(m,5H),7.02-6.97(m,1H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.22-8.20 (m, 2H), 7.92-7.88 (m, 2H), 7.85-7.82 (m, 2H), 7.80 (d, 1H), 7.75-7.69 (m, 4H), 7.67-7.66 (dd, 1H), 7.65-7.63 (m, 2H), 7.61 (d, 1H), 7.55-7.53 (dd, 1H), 7.49-7.42 (m, 7H), 7.38 -7.29 (m, 5H), 7.02-6.97 (m, 1H)
除了使用中間物4-43而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製4.97 g之化合物73(產率65%)。使用MS/FAB與1H NMR驗證化合物73。 4.97 g of Compound 73 (yield 65%) was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34 except for using Intermediate 4-43 instead of Intermediate 4-25. Compound 73 was verified using MS/FAB and 1 H NMR.
C58H40N2:calc.764.32,and found;764.33 C 58 H 40 N 2 : calc.764.32, and found; 764.33
1H NMR(CDCl3,400MHz)δ(ppm)7.85-7.82(m,2H),7.81-7.79(m,2H),7.78-7.75(m,2H),7.73-7.68(m,4H),7.67-7.64(m,2H),7.56-7.52(m,2H),7.47-7.44(m,3H),7.39-7.27(m,8H),7.13-7.09(m,2H),7.02-7.00(m,1H),6.96-6.92(m,2H),6.86-6.84(dd,1H),6.82-6.79(m,2H),6.77(d,1H),1.65(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.85-7.82 (m, 2H), 7.81-7.79 (m, 2H), 7.78-7.75 (m, 2H), 7.73-7.68 (m, 4H), 7.67 -7.64 (m, 2H), 7.56-7.52 (m, 2H), 7.47-7.44 (m, 3H), 7.39-7.27 (m, 8H), 7.13-7.09 (m, 2H), 7.02-7.00 (m, 1H), 6.96-6.92 (m, 2H), 6.86-6.84 (dd, 1H), 6.82-6.79 (m, 2H), 6.77 (d, 1H), 1.65 (s, 6H)
除了使用中間物4-76而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製6.06 g之化合物76(產率78%)。使用MS/FAB與1H NMR驗證化合物76。 In the same manner as the preparation of the compound 58 of Synthesis Example 34, 6.06 g of Compound 76 (yield: 78%) was prepared, except that Intermediate 4-76 was used instead of Intermediate 4-25. Compound 76 was verified using MS/FAB and 1 H NMR.
C59H40N2:計算值776.32,而實測776.32 C 59 H 40 N 2 : calculated 776.32, and measured 776.32
1H NMR(CDCl3,400MHz)δ(ppm)8.68-8.67(m,1H),8.39-8.36(m,1H),7.94-7.91(m,1H),7.84-7.80(m,3H),7.79-7.78(m,1H),7.73-7.69(m,4H),7.67-7.61(m,4H),7.55-7.38(m,10H),7.37-7.24(m,7H),7.18-7.16(m,1H),7.06-7.02(m,2H),6.91-6.88(m,2H),6.82-6.78(m,2H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.68-8.67 (m, 1H), 8.39-8.36 (m, 1H), 7.94-7.91 (m, 1H), 7.84-7.80 (m, 3H), 7.79 -7.78 (m, 1H), 7.73-7.69 (m, 4H), 7.67-7.61 (m, 4H), 7.55-7.38 (m, 10H), 7.37-7.24 (m, 7H), 7.18-7.16 (m, 1H), 7.06-7.02 (m, 2H), 6.91-6.88 (m, 2H), 6.82-6.78 (m, 2H)
除了使用中間物4-77而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.22 g之化合 物77(產率72%)。使用MS/FAB與1H NMR驗證化合物77。 5.22 g of Compound 77 (yield 72%) was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34, except that Intermediate 4-77 was used instead of Intermediate 4-25. Compound 77 was verified using MS/FAB and 1 H NMR.
C54H35N3:計算值725.28,而實測725.27 C 54 H 35 N 3 : calculated value 725.28, and measured 725.27
1H NMR(CDCl3,400MHz)δ(ppm)8.55-8.52(m,2H),7.85-7.82(m,2H),7.81-7.77(m,3H),7.74-7.70(m,4H),7.67(d,1H),7.65(d,1H),7.58-7.52(m,5H),7.47-7.44(m,3H),7.39-7.28(m,7H),7.11-7.09(m,1H),7.02-6.99(m,2H),6.93-6.89(m,2H),6.81-6.77(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.55-8.52 (m, 2H), 7.85-7.82 (m, 2H), 7.81-7.77 (m, 3H), 7.74-7.70 (m, 4H), 7.67 (d, 1H), 7.65 (d, 1H), 7.58-7.52 (m, 5H), 7.47-7.44 (m, 3H), 7.39-7.28 (m, 7H), 7.11-7.09 (m, 1H), 7.02 -6.99 (m, 2H), 6.93 - 6.89 (m, 2H), 6.81-6.77 (m, 2H)
除了使用中間物4-78而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.63 g之化合物78(產率75%)。使用MS/FAB與1H NMR驗證化合物78。 5.63 g of Compound 78 (yield 75%) was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34, except that Intermediate 4-78 was used instead of Intermediate 4-25. Compound 78 was verified using MS/FAB and 1 H NMR.
C57H38N2:計算值750.30,而實測750.29 C 57 H 38 N 2 : calculated value 750.30, while measured 750.29
1H NMR(CDCl3,400MHz)δ(ppm)8.67-8.65(dd,1H),8.40-8.37(m,1H),7.95-7.92(m,1H),7.85-7.82(m,2H),7.81-7.79(m,2H),7.78-7.76(m,2H),7.74-7.68(m,4H),7.66-7.63(m,3H),7.58-7.52(m,4H),7.48-7.44(m,4H),7.37-7.25(m,8H),7.16-7.15(m,1H),7.02-7.00(dd,1H),6.95-6.91(m,2H),6.84-6.81(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.67-8.65 (dd, 1H), 8.40-8.37 (m, 1H), 7.95-7.92 (m, 1H), 7.85-7.82 (m, 2H), 7.81 -7.79 (m, 2H), 7.78-7.76 (m, 2H), 7.74-7.68 (m, 4H), 7.66-7.63 (m, 3H), 7.58-7.52 (m, 4H), 7.48-7.44 (m, 4H), 7.37-7.25 (m, 8H), 7.16-7.15 (m, 1H), 7.02-7.00 (dd, 1H), 6.95-6.91 (m, 2H), 6.84-6.81 (m, 2H)
除了使用中間物4-79而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.00 g之化合物79(產率69%)。使用MS/FAB與1H NMR驗證化合物79。 In the same manner as the preparation of Compound 58 of Synthesis Example 34, 5.00 g of Compound 79 (yield 69%) was obtained, except that Intermediate 4-79 was used instead of Intermediate 4-25. Compound 79 was verified using MS/FAB and 1 H NMR.
C54H35N3:計算值725.28,而實測725.27 C 54 H 35 N 3 : calculated value 725.28, and measured 725.27
1H NMR(CDCl3,400MHz)δ(ppm)8.49-8.46(m,1H),7.84-7.77(m, 7H),7.74-7.68(m,5H),7.67-7.63(m,3H),7.56-7.54(dd,1H),7.47-7.43(m,3H),7.39-7.26(m,8H),7.19-7.17(m,1H),7.03-6.99(m,2H),6.92-6.88(m,2H),6.81-6.78(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.49-8.46 (m, 1H), 7.84-7.77 (m, 7H), 7.74-7.68 (m, 5H), 7.67-7.63 (m, 3H), 7.56 -7.54 (dd, 1H), 7.47-7.43 (m, 3H), 7.39-7.26 (m, 8H), 7.19-7.17 (m, 1H), 7.03-6.99 (m, 2H), 6.92-6.88 (m, 2H), 6.81-6.78 (m, 2H)
除了使用中間物2-82而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-82。 The intermediate 3-82 was prepared in the same manner as the preparation of the intermediate 3-1 of Synthesis Example 1, except that the intermediate 2-82 was used instead of the intermediate 2-1.
除了使用中間物3-82與中間物4-25而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.20 g之化合物82(產率67%)。使用MS/FAB與1H NMR驗證化合物82。 5.20 g of the compound was prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-82 and the intermediate 4-25 were used instead of the intermediate 3-1 and the intermediate 4-1. 82 (yield 67%). Compound 82 was verified using MS/FAB and 1 H NMR.
C59H40N2:計算值776.32,而實測776.33 C 59 H 40 N 2 : calculated value 776.32, and measured 776.33
1H NMR(CDCl3,400MHz)δ(ppm)8.68(d,1H),8.41-8.38(m,1H),7.94-7.91(m,1H),7.86-7.80(m,5H),7.74-7.64(m,10H),7.56-7.53(m,1H),7.49-7.44(m,4H),7.38-7.24(m,7H),7.13-7.09(m,2H),7.04-6.99(m,3H),6.96-6.92(m,2H),6.87-6.83(m,1H),6.81-6.78(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.68 (d, 1H), 8.41-8.38 (m, 1H), 7.94-7.91 (m, 1H), 7.86-7.80 (m, 5H), 7.74-7.64 (m, 10H), 7.56-7.53 (m, 1H), 7.49-7.44 (m, 4H), 7.38-7.24 (m, 7H), 7.13-7.09 (m, 2H), 7.04-6.99 (m, 3H) , 6.96-6.92 (m, 2H), 6.87-6.83 (m, 1H), 6.81-6.78 (m, 2H)
除了使用中間物4-48而非中間物4-25外,以與合成例50之化合物82之備製的方法相同之方式備製5.58 g之化合物83(產率68%)。使用MS/FAB與1H NMR驗證化合物83。 5.58 g of Compound 83 (yield 68%) was prepared in the same manner as in the preparation of Compound 82 of Synthesis Example 50, except that Intermediate 4-48 was used instead of Intermediate 4-25. Compound 83 was verified using MS/FAB and 1 H NMR.
C63H42N2:計算值826.33,而實測826.32 1H NMR(CDCl3,400MHz)δ(ppm)8.46-8.43(m,1H),8.17-8.14(m,1H),7.87-7.80(m,6H),7.79-7.75(m,2H),7.74-7.63(m,12H),7.56-7.54(dd,1H),7.49-7.40(m,6H),7.38-7.22(m,7H),7.16-7.14(m,1H),7.05-7.00(m,2H),6.95-6.93(dd,1H),6.85-6.82(m,2H) C 63 H 42 N 2 : calcd. 826.33, and found 826.32 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.46-8.43 (m, 1H), 8.17-8.14 (m, 1H), 7.87-7.80 (m) , 6H), 7.79-7.75 (m, 2H), 7.74-7.63 (m, 12H), 7.56-7.54 (dd, 1H), 7.49-7.40 (m, 6H), 7.38-7.22 (m, 7H), 7.16 -7.14(m,1H), 7.05-7.00(m,2H), 6.95-6.93(dd,1H), 6.85-6.82(m,2H)
除了使用中間物2-84而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-84。 The intermediate 3-84 was prepared in the same manner as in the preparation of the intermediate 3-1 of Synthesis Example 1, except that the intermediate 2-84 was used instead of the intermediate 2-1.
除了使用中間物3-84與中間物4-30而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.90 g之化合物84(產率62%)。使用MS/FAB與1H NMR驗證化合物84。 4.90 g of the compound was prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-84 and the intermediate 4-30 were used instead of the intermediate 3-1 and the intermediate 4-1. 84 (yield 62%). Compound 84 was verified using MS/FAB and 1 H NMR.
C60H42N2:計算值790.33,而實測790.32 C 60 H 42 N 2 : calculated value 790.33, and measured 790.32
1H NMR(CDCl3,400MHz)δ(ppm)8.69(d,1H),8.40-8.37(m,1H),8.11-8.08(m,1H),7.93-7.90(m,2H),7.89-7.85(m,2H),7.84-7.79(m,4H),7.72-7.68(m,2H),7.62-7.59(m,2H),7.53-7.51(m,1H),7.49-7.42(m,6H),7.40-7.25(m,8H),7.13-7.11(m,1H),7.07-7.05(dd,1H),6.98-6.96(dd,1H),6.90-6.86(m,2H),6.82(d,1H),1.62(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.69 (d, 1H), 8.40-8.37 (m, 1H), 8.11 - 8.08 (m, 1H), 7.93 - 7.90 (m, 2H), 7.89 - 7.85 (m, 2H), 7.84 - 7.79 (m, 4H), 7.72 - 7.68 (m, 2H), 7.62 - 7.59 (m, 2H), 7.53 - 7.51 (m, 1H), 7.49 - 7.42 (m, 6H) , 7.40-7.25 (m, 8H), 7.13-7.11 (m, 1H), 7.07-7.05 (dd, 1H), 6.98-6.96 (dd, 1H), 6.90-6.86 (m, 2H), 6.82 (d, 1H), 1.62 (s, 6H)
除了使用中間物4-27而非中間物4-30外,以與合成例52之化合物84之備製的方法相同之方式備製4.90 g之化合 物84(產率64%)。使用MS/FAB與1H NMR驗證化合物84。 4.90 g of Compound 84 (yield 64%) was prepared in the same manner as in the preparation of Compound 84 of Synthesis Example 52 except for using Intermediate 4-27 instead of Intermediate 4-30. Compound 84 was verified using MS/FAB and 1 H NMR.
C57H39N3:計算值765.31,而實測765.30 C 57 H 39 N 3 : calculated value 765.31, and measured 765.30
1H NMR(CDCl3,400MHz)δ(ppm)8.68(d,1H),8.38-8.35(m,1H),7.95-7.92(m,2H),7.90-7.88(m,1H),7.85-7.80(m,4H),7.73-7.69(m,2H),7.63-7.60(m,2H),7.55-7.52(m,2H),7.48-7.44(m,2H),7.41-7.33(m,5H),7.32-7.25(m,4H),7.12-7.09(m,1H),7.03-6.96(m,2H),6.93-6.90(dd,1H),6.88-6.84(m,2H),6.80(d,1H),1.61(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.68 (d, 1H), 8.38-8.35 (m, 1H), 7.95-7.92 (m, 2H), 7.90-7.88 (m, 1H), 7.85-7. (m, 4H), 7.73-7.69 (m, 2H), 7.63-7.60 (m, 2H), 7.55-7.52 (m, 2H), 7.48-7.44 (m, 2H), 7.41-7.33 (m, 5H) , 7.32-7.25 (m, 4H), 7.12-7.09 (m, 1H), 7.03-6.96 (m, 2H), 6.93-6.90 (dd, 1H), 6.88-6.84 (m, 2H), 6.80 (d, 1H), 1.61 (s, 6H)
除了使用中間物4-31而非中間物4-30外,以與合成例52之化合物84之備製的方法相同之方式備製4.73 g之化合物86(產率64%)。使用MS/FAB與1H NMR驗證化合物86。 4.73 g of Compound 86 (yield 64%) was prepared in the same manner as in the preparation of Compound 84 of Synthesis Example 52 except for using Intermediate 4-31 instead of Intermediate 4-30. Compound 86 was verified using MS/FAB and 1 H NMR.
C56H38N2:計算值738.30,而實測738.31 C 56 H 38 N 2 : calculated value 738.30, and measured 738.31
1H NMR(CDCl3,400MHz)δ(ppm)8.11-8.08(m,1H),7.94-7.91(m,1H),7.89-7.85(m,2H),7.84-7.79(m,4H),7.72-7.69(m,2H),7.62-7.59(m,2H),7.54-7.51(m,1H),7.49-7.41(m,5H),7.40-7.34(m,5H),7.32-7.25(m,3H),7.14-7.12(m,1H),7.01-6.99(m,1H),6.93-6.87(m,3H),6.85(d,1H),1.62(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.11 - 8.08 (m, 1H), 7.94 - 7.91 (m, 1H), 7.89 - 7.85 (m, 2H), 7.84 - 7.79 (m, 4H), 7.72 - 7.69 (m, 2H), 7.62 - 7.59 (m, 2H), 7.54 - 7.51 (m, 1H), 7.49 - 7.41 (m, 5H), 7.40 - 7.34 (m, 5H), 7.32 - 7.25 (m, 3H), 7.14-7.12 (m, 1H), 7.01-6.99 (m, 1H), 6.93-6.87 (m, 3H), 6.85 (d, 1H), 1.62 (s, 6H)
除了使用中間物2-89而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-89。 The intermediate 3-89 was prepared in the same manner as in the preparation of the intermediate 3-1 of Synthesis Example 1, except that the intermediate 2-89 was used instead of the intermediate 2-1.
除了使用中間物3-89與中間物4-4而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.61 g之化合物89(產率75%)。使用MS/FAB與1H NMR驗證化合物89。 5.61 g of the compound was prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-89 and the intermediate 4-4 were used instead of the intermediate 3-1 and the intermediate 4-1. 89 (yield 75%). Compound 89 was verified using MS/FAB and 1 H NMR.
C57H36N2:計算值748.29,而實測748.30 C 57 H 36 N 2 : calculated value 748.29, and measured 748.30
1H NMR(CDCl3,400MHz)δ(ppm)8.25-8.19(m,2H),8.11-8.09(m,1H),8.06-8.04(m,1H),7.85-7.82(m,2H),7.81-7.80(m,1H),7.78-7.77(m,1H),7.72-7.68(m,3H),7.64-7.61(m,2H),7.59-7.55(m,3H),7.54-7.48(m,3H),7.47-7.43(m,3H),7.42-7.35(m,5H),7.34-7.27(m,3H),7.12-7.08(m,2H),7.02-6.98(m,2H),6.90-6.86(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.25-8.19 (m, 2H), 8.11-8.09 (m, 1H), 8.06-8.04 (m, 1H), 7.85-7.82 (m, 2H), 7.81 - 7.80 (m, 1H), 7.78-7.77 (m, 1H), 7.72-7.68 (m, 3H), 7.64-7.61 (m, 2H), 7.59-7.55 (m, 3H), 7.54-7.48 (m, 3H), 7.47-7.43 (m, 3H), 7.42-7.35 (m, 5H), 7.34-7.27 (m, 3H), 7.12-7.08 (m, 2H), 7.02-6.98 (m, 2H), 6.90- 6.86 (m, 2H)
除了使用中間物2-92而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-92。 The intermediate 3-92 was prepared in the same manner as the preparation of the intermediate 3-1 of Synthesis Example 1, except that the intermediate 2-92 was used instead of the intermediate 2-1.
除了使用中間物3-92與中間物4-27而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.61 g之化合物92(產率61%)。使用MS/FAB與1H NMR驗證化合物92。 4.61 g of the compound was prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-92 and the intermediate 4-27 were used instead of the intermediate 3-1 and the intermediate 4-1. 92 (yield 61%). Compound 92 was verified using MS/FAB and 1 H NMR.
C54H33N3S:計算值755.24,而實測755.25 C 54 H 33 N 3 S: calculated value 755.24, and measured 755.25
1H NMR(CDCl3,400MHz)δ(ppm)8.70-8.68(m,1H),8.40-8.37(m,2H),8.01(d,1H),7.93-7.91(m,1H),7.88-7.86(dd,1H),7.85-7.82 (m,2H),7.81-7.80(m,1H),7.78-7.76(m,1H),7.73-7.69(m,2H),7.64(d,1H)7.63-7.62(m,1H),7.54-7.51(m,1H),7.48-7.43(m,2H),7.40-7.35(m,4H),7.34-7.24(m,5H),7.13-7.12(m,1H),7.06-7.03(dd,1H),6.98-6.93(m,1H),6.92-6.84(m,4H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.70-8.68 (m, 1H), 8.40-8.37 (m, 2H), 8.01 (d, 1H), 7.93-7.91 (m, 1H), 7.88-7.86 (dd, 1H), 7.85-7.82 (m, 2H), 7.81-7.80 (m, 1H), 7.78-7.76 (m, 1H), 7.73-7.69 (m, 2H), 7.64 (d, 1H) 7.63 7.62 (m, 1H), 7.54 - 7.51 (m, 1H), 7.48 - 7.43 (m, 2H), 7.40 - 7.35 (m, 4H), 7.34 - 7.24 (m, 5H), 7.13 - 7.12 (m, 1H) ), 7.06-7.03 (dd, 1H), 6.98-6.93 (m, 1H), 6.92-6.84 (m, 4H)
除了使用中間物2-95而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-95。 The intermediate 3-95 was prepared in the same manner as in the preparation of the intermediate 3-1 of Synthesis Example 1, except that the intermediate 2-95 was used instead of the intermediate 2-1.
除了使用中間物3-95與中間物4-30而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.74 g之化合物95(產率62%)。使用MS/FAB與1H NMR驗證化合物95。 4.74 g of the compound was prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-95 and the intermediate 4-30 were used instead of the intermediate 3-1 and the intermediate 4-1. 95 (yield 62%). Compound 95 was verified using MS/FAB and 1 H NMR.
C57H36N2O:計算值764.28,而實測764.29 C 57 H 36 N 2 O: calculated 764.28, and measured 764.29
1H NMR(CDCl3,400MHz)δ(ppm)8.69-8.67(m,1H),8.41-8.38(m,1H),8.11-8.08(m,1H),8.04-8.02(m,1H),7.99-7.96(m,2H),7.94-7.91(m,1H),7.87-7.85(m,1H),7.84-7.77(m,6H),7.73-7.69(m,2H),7.55-7.52(m,1H),7.48-7.41(m,5H),7.40-7.36(m,3H),7.35-7.25(m,5H),7.10-7.04(m,2H),6.98-6.96(m,1H),6.94-6.92(dd,1H),6.88-6.85(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.69-8.67 (m, 1H), 8.41-8.38 (m, 1H), 8.11-8.08 (m, 1H), 8.04-8.02 (m, 1H), 7.99 -7.96(m,2H),7.94-7.91(m,1H),7.87-7.85(m,1H),7.84-7.77(m,6H),7.73-7.69(m,2H),7.55-7.52(m, 1H), 7.48-7.41 (m, 5H), 7.40-7.36 (m, 3H), 7.35-7.25 (m, 5H), 7.10-7.04 (m, 2H), 6.98-6.96 (m, 1H), 6.94 6.92 (dd, 1H), 6.88-6.85 (m, 2H)
除了使用中間物2-97而非中間物2-1外,以與合成 例1之中間物3-1之備製的方法相同之方式備製中間物3-97。 In addition to using the intermediate 2-97 instead of the intermediate 2-1, The preparation of the intermediate 3-1 of Example 1 was prepared in the same manner as the intermediate 3-97.
除了使用中間物3-97與中間物4-4而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.96 g之化合物97(產率61%)。使用MS/FAB與1H NMR驗證化合物97。 4.96 g of the compound was prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-97 and the intermediate 4-4 were used instead of the intermediate 3-1 and the intermediate 4-1. 97 (yield 61%). Compound 97 was verified using MS/FAB and 1 H NMR.
C61H39N3:計算值813.31,而實測813.32 C 61 H 39 N 3 : calculated value 811.31, and measured 813.32
1H NMR(CDCl3,400MHz)δ(ppm)8.31-8.29(m,1H),7.84-7.82(m,2H),7.81-7.80(m,1H),7.77-7.74(m,1H),7.72-7.68(m,4H),7.64-7.61(m,2H),7.60-7.58(m,1H),7.54-7.47(m,7H),7.46-7.41(m,4H),7.40-7.36(m,5H),7.34-7.28(m,4H),7.24-7.22(m,1H),7.16-7.14(m,1H),7.06-7.00(m,2H),6.86-6.80(m,3H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.31-8.29 (m, 1H), 7.84-7.82 (m, 2H), 7.81-7.80 (m, 1H), 7.77-7.74 (m, 1H), 7.72 -7.68 (m, 4H), 7.64-7.61 (m, 2H), 7.60-7.58 (m, 1H), 7.54-7.47 (m, 7H), 7.46-7.41 (m, 4H), 7.40-7.36 (m, 5H), 7.34-7.28 (m, 4H), 7.24-7.22 (m, 1H), 7.16-7.14 (m, 1H), 7.06-7.00 (m, 2H), 6.86-6.80 (m, 3H)
除了使用中間物4-31而非中間物4-4外,以與合成例58之化合物97之備製的方法相同之方式備製4.65 g之化合物98(產率59%)。使用MS/FAB與1H NMR驗證化合物98。 4.65 g of Compound 98 (yield 59%) was prepared in the same manner as in the preparation of Compound 97 of Synthesis Example 58 except that Intermediate 4-31 was used instead of Intermediate 4-4. Compound 98 was verified using MS/FAB and 1 H NMR.
C59H37N3:計算值787.30,而實測787.29 C 59 H 37 N 3 : Calculated value 787.30, and measured 787.29
1H NMR(CDCl3,400MHz)δ(ppm)8.32-8.30(m,1H),8.10-8.07(dd,1H),7.87-7.85(m,1H),7.84-7.80(m,2H),7.80-7.79(m,1H),7.76-7.74(m,1H),7.73-7.68(m,4H),7.61-7.58(m,1H),7.55-7.51(m,1H),7.50-7.43(m,7H),7.42-7.35(m,6H),7.34-7.23(m,6H),7.13-7.10(m,1H),7.04-7.03(dd,1H),6.94-6.91(dd,1H),6.87-6.84(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.32-8.30 (m, 1H), 8.10-8.07 (dd, 1H), 7.87-7.85 (m, 1H), 7.84-7.80 (m, 2H), 7.80 -7.79 (m, 1H), 7.76-7.74 (m, 1H), 7.73-7.68 (m, 4H), 7.61-7.58 (m, 1H), 7.55-7.51 (m, 1H), 7.50-7.43 (m, 7H), 7.42-7.35 (m, 6H), 7.34-7.23 (m, 6H), 7.13-7.10 (m, 1H), 7.04-7.03 (dd, 1H), 6.94-6.91 (dd, 1H), 6.87- 6.84 (m, 2H)
除了使用中間物2-98而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-99。 The intermediate 3-99 was prepared in the same manner as the preparation of the intermediate 3-1 of Synthesis Example 1, except that the intermediate 2-98 was used instead of the intermediate 2-1.
除了使用中間物3-99與中間物4-30而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.03 g之化合物99(產率55%)。使用MS/FAB與1H NMR驗證化合物99。 Preparing 5.03 g of compound in the same manner as in the preparation of Compound 1 of Synthesis Example 1, except that Intermediate 3-99 and Intermediate 4-30 were used instead of Intermediate 3-1 and Intermediate 4-1. 99 (yield 55%). Compound 99 was verified using MS/FAB and 1 H NMR.
C69H45N3:計算值915.36,而實測915.35 C 69 H 45 N 3 : calculated value 915.36, and measured 915.35
1H NMR(CDCl3,400MHz)δ(ppm)8.90(s,1H),8.60-8.58(dd,1H),8.45(s,1H),8.13-8.11(dd,1H),7.94-7.91(m,1H),7.87-7.75(m,5H),7.72-7.58(m,7H),7.54-7.21(m,23),7.16-7.14(m,1H),7.03-6.99(m,2H),6.89-6.84(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.90 (s, 1H), 8.60-8.58 (dd, 1H), 8.45 (s, 1H), 8.13 - 8.11 (dd, 1H), 7.94 - 7.91 (m) , 1H), 7.87-7.75 (m, 5H), 7.72-7.58 (m, 7H), 7.54-7.21 (m, 23), 7.16-7.14 (m, 1H), 7.03-6.99 (m, 2H), 6.89 -6.84(m,2H)
除了使用中間物B37而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.71 g之化合物103(產率76%)。使用MS/FAB與1H NMR驗證化合物103。 In the same manner as the preparation of Compound 1 of Synthesis Example 1, except that the intermediate B37 was used instead of the intermediate 4-1, 5.71 g of Compound 103 (yield 76%) was prepared. Compound 103 was verified using MS/FAB and 1 H NMR.
C56H37N3:計算值751.30,實測751.28 C 56 H 37 N 3 : calculated value 751.30, measured 751.28
1H NMR(CDCl3,400MHz)δ(ppm)8.76(s,2H),8.57(d,2H),8.12(d,1H),7.93(d,2H),7.87-7.65(m,9H),7.61-7.27(m,15H),7.14-7.10(m,2H),7.08-7.05(m,3H),6.98(d,1H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.76 (s, 2H), 8.57 (d, 2H), 8.12 (d, 1H), 7.93 (d, 2H), 7.87-7.65 (m, 9H), 7.61-7.27 (m, 15H), 7.14-7.10 (m, 2H), 7.08-7.05 (m, 3H), 6.98 (d, 1H)
除了使用中間物B38而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.23 g之化合物104(產率72%)。使用MS/FAB與1H NMR驗證化合物104。 In the same manner as the preparation of Compound 1 of Synthesis Example 1, except that the intermediate B38 was used instead of the intermediate 4-1, 5.23 g of Compound 104 (yield: 72%) was prepared. Compound 104 was verified using MS/FAB and 1 H NMR.
C53H34N4:計算值726.28,實測726.27 C 53 H 34 N 4 : calculated value 726.28, measured 726.27
1H NMR(CDCl3,400MHz)δ(ppm)8.78(s,2H),8.56(d,2H),7.94(d,2H),7.84-7.80(m,3H),7.72-7.60(m,7H),7.54-7.25(m,11H),7.12-7.08(m,5H),7.02-6.99(m,2H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.78 (s, 2H), 8.56 (d, 2H), 7.94 (d, 2H), 7.84-7.80 (m, 3H), 7.72-7.60 (m, 7H ), 7.54 - 7.25 (m, 11H), 7.12 - 7.08 (m, 5H), 7.02 - 6.99 (m, 2H)
除了使用中間物3-58與中間物B37而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製6.21 g之化合物107(產率75%)。使用MS/FAB與1H NMR驗證化合物107。 6.21 g of the compound 107 were prepared in the same manner as in the preparation of the compound 1 of Synthesis Example 1, except that the intermediate 3-58 and the intermediate B37 were used instead of the intermediate 3-1 and the intermediate 4-1. Yield 75%). Compound 107 was verified using MS/FAB and 1 H NMR.
C62H41N3:計算值827.33,實測827.31 C 62 H 41 N 3 : calculated value 827.33, measured 827.31
1H NMR(CDCl3,400MHz)δ(ppm)8.76(s,2H),8.57(d,2H),8.11(d,1H),7.94(d,2H),7.87-7.62(m,13H),7.54-7.26(m,15H),7.12-7.10(m,3H),7.06-7.03(m,1H),6.96-6.92(m,2H) 1 H NMR (CDCl 3, 400MHz ) δ (ppm) 8.76 (s, 2H), 8.57 (d, 2H), 8.11 (d, 1H), 7.94 (d, 2H), 7.87-7.62 (m, 13H), 7.54-7.26(m,15H), 7.12-7.10(m,3H),7.06-7.03(m,1H),6.96-6.92(m,2H)
為製造陽極,將Corning 15 Ω/cm2(1200 Å)ITO玻璃基板裁成50mm x 50mm x 0.7mm之尺寸,接著於異丙醇與純水中以各超音波5分鐘,並以紫外線照射30分鐘並暴露於臭氧下。將所得玻璃基板置於真空沈積二極管(vacuum deposition diode)中。 To make the anode, the Corning 15 Ω/cm 2 (1200 Å) ITO glass substrate was cut to a size of 50 mm x 50 mm x 0.7 mm, followed by each ultrasonic wave in isopropanol and pure water for 5 minutes, and irradiated with ultraviolet light 30. Minutes and exposed to ozone. The resulting glass substrate was placed in a vacuum deposition diode.
將2-TNATA沈積於ITO玻璃基板上以於陽極上形成具有600Å厚度之電洞注入層,接著沈積4,4'-雙[N-(1-萘基)-N-苯氨基]聯苯(4,4’-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(NPS))於電洞注入層上以形成具有300Å厚度之電洞傳輸層。 2-TNATA was deposited on an ITO glass substrate to form a hole injection layer having a thickness of 600 Å on the anode, followed by deposition of 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl ( 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPS) was formed on the hole injection layer to form a hole transport layer having a thickness of 300 Å.
接著,9,10-二(萘-2-基)蒽 (9,10-di-naphthalene-2-yl-anthracene(ADN))與4,4'-二[2-(4-(N,N-二苯胺基)-苯基)乙烯基]聯苯(4,4’-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl(DPAVBi))以98:2之重量比共沈積於電洞傳輸層上以形成具有約300Å厚度之發光層。 Next, 9,10-di(naphthalen-2-yl)anthracene (9,10-di-naphthalene-2-yl-anthracene (ADN)) and 4,4'-bis[2-(4-(N,N-diphenylamino)-phenyl)vinyl]biphenyl ( 4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl(DPAVBi)) is co-deposited on the hole transport layer in a weight ratio of 98:2 to form a thickness of about 300 Å. Light-emitting layer.
接著,沈積化合物1於發光層上以形成具有約300Å 厚度之電子傳輸層,然後沈積LiF於電子傳輸層上以形成具有約10Å厚度之電子注入層。接著沈積Al於電子注入層上以形成具有約3,000Å厚度之第二電極(陰極),從而完成有機發光二極體之製造。 Next, the compound 1 is deposited on the light-emitting layer to form about 300 Å. A thickness of the electron transport layer is then deposited on the electron transport layer to form an electron injecting layer having a thickness of about 10 Å. Next, Al is deposited on the electron injecting layer to form a second electrode (cathode) having a thickness of about 3,000 Å, thereby completing the fabrication of the organic light emitting diode.
<DPAVBi>
除了使用化合物4而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 4 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物14而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 14 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物23而非化合物1形成電子傳輸層 外,與實例1相同之方式製造之有機發光二極體。 In addition to using compound 23 instead of compound 1, an electron transport layer is formed Further, an organic light-emitting diode manufactured in the same manner as in Example 1.
除了使用化合物25而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 25 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物27而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 27 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物31而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 31 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物32而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 32 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物42而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 42 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物48而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 48 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物58而非化合物1形成電子傳輸層 外,與實例1相同之方式製造之有機發光二極體。 In addition to using compound 58 instead of compound 1, an electron transport layer is formed Further, an organic light-emitting diode manufactured in the same manner as in Example 1.
除了使用化合物60而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 60 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物62而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 62 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物66而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 66 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物70而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 70 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物77而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the electron transport layer was formed using Compound 77 instead of Compound 1.
除了使用化合物82而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 82 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物86而非化合物1形成電子傳輸層 外,與實例1相同之方式製造之有機發光二極體。 In addition to using compound 86 instead of compound 1, an electron transport layer is formed Further, an organic light-emitting diode manufactured in the same manner as in Example 1.
除了使用化合物97而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the electron transporting layer was formed using Compound 97 instead of Compound 1.
除了使用化合物25而非DPAVBi形成發光層,及Alq3而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the light-emitting layer was formed using Compound 25 instead of DPAVBi, and Alq 3 was used instead of Compound 1.
除了使用化合物86而非DPAVBi形成發光層,及Alq3而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the light-emitting layer was formed using Compound 86 instead of DPAVBi, and Alq 3 was formed instead of Compound 1.
除了使用化合物103而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 103 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物104而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 104 was used instead of the compound 1 to form an electron transport layer.
除了使用化合物107而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound 107 was used instead of the compound 1 to form an electron transport layer.
除了使用Alq3而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that an electron transport layer was formed using Alq 3 instead of Compound 1.
比較例2 Comparative example 2
化合物A係根據以下反應流程圖A合成:
除了使用中間物1-A而非中間物1-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-A。 The intermediate 3-A was prepared in the same manner as the preparation of the intermediate 3-1 of Synthesis Example 1, except that the intermediate 1-A was used instead of the intermediate 1-1.
除了使用4.24 g(10 mmol)之中間物3-A與2.23 g(12.0 mmol)之中間物4-A而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製3.23 g之化合物A(產率63%)。 In addition to the use of 4.24 g (10 mmol) of intermediate 3-A and 2.23 g (12.0 mmol) of intermediate 4-A instead of intermediate 3-1 and intermediate 4-1, with compound 1 of Synthesis Example 1. In the same manner as in the preparation, 3.23 g of Compound A (yield 63%) was prepared.
除了使用化合物A而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound A was used instead of the compound 1 to form an electron transport layer.
化合物B係根據以下反應流程圖B合成:
除了使用中間物4-B而非中間物4-A外,以與合成比較例2之化合物A之備製的方法相同之方式備製化合物B。 Compound B was prepared in the same manner as in the preparation of Compound A of Comparative Example 2 except that Intermediate 4-B was used instead of Intermediate 4-A.
除了使用化合物B而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound B was used instead of the compound 1 to form an electron transport layer.
化合物C係根據以下反應流程圖C合成:
除了使用中間物4-C而非中間物4-A外,以與合成比較例2之化合物A之備製的方法相同之方式備製化合物C。 Compound C was prepared in the same manner as in the preparation of Compound A of Comparative Example 2 except that Intermediate 4-C was used instead of Intermediate 4-A.
除了使用化合物C而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound C was used instead of the compound 1 to form an electron transport layer.
化合物D係根據以下反應流程圖D合成:
除了使用中間物4-D而非中間物4-A外,以與合成比較例2之化合物A之備製的方法相同之方式備製化合物D。 Compound D was prepared in the same manner as in the preparation of Compound A of Comparative Example 2 except that Intermediate 4-D was used instead of Intermediate 4-A.
除了使用化合物D而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that the compound D was used instead of the compound 1 to form an electron transport layer.
使用PR650(Spectroscan)光源量測單元(得自Photo Research,Inc.)實例1至實例24與比較例1至5之有機發光二極體之驅動電壓、亮度、發光顏色、效率(@50 mA/cm2之電流密度)與使用壽命(@100 mA/cm2)。結果呈現於以下表1。 Driving voltage, brightness, luminescent color, and efficiency of the organic light-emitting diodes of Examples 1 to 24 and Comparative Examples 1 to 5 using PR650 (Spectroscan) light source measuring unit (from Photo Research, Inc.) (@50 mA/ Current density of cm 2 ) and service life (@100 mA/cm 2 ). The results are presented in Table 1 below.
參照表1,發現相較於比較例1至比較例5之有機 發光二極體,實例1至實例19與實例22至實例24之有機發光二極體具有較低之驅動電壓、較高之亮度、較高之效率與較佳之 使用壽命特性。發現相較於比較例1之有機發光二極體,實例20至實例21之有機發光二極體具有較低之驅動電壓與較佳之使用壽命。 Referring to Table 1, it was found that compared with the organic matter of Comparative Example 1 to Comparative Example 5 The light-emitting diodes, the organic light-emitting diodes of Examples 1 to 19 and Examples 22 to 24 have a lower driving voltage, higher brightness, higher efficiency, and better Service life characteristics. The organic light-emitting diodes of Examples 20 to 21 were found to have a lower driving voltage and a better service life than the organic light-emitting diode of Comparative Example 1.
如上所述,根據實施例包含任何胺系化合物之有機發光二極體可具有低驅動電壓、高亮度、高效率與長使用壽命。 As described above, the organic light-emitting diode including any amine compound according to the embodiment can have a low driving voltage, high luminance, high efficiency, and long service life.
雖然本實施例已藉參照其例示性實施例而具體顯示與描述,其將為習知技術者所理解的是對其所進行之各種形式與細節上之改變皆未脫離附隨申請專利範圍定義之本實施例之範疇與精神。 While the present invention has been particularly shown and described with reference to the exemplary embodiments thereof, it will be understood by those skilled in the art The scope and spirit of this embodiment.
10‧‧‧有機發光二極體 10‧‧‧Organic Luminescent Diodes
11‧‧‧基板 11‧‧‧Substrate
13‧‧‧第一電極 13‧‧‧First electrode
15‧‧‧有機層 15‧‧‧Organic layer
17‧‧‧第二電極 17‧‧‧second electrode
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