TW201320429A - Method for manufacturing display device, and display device - Google Patents

Abstract

An a-ITO layer (112) is formed above a reflection electrode layer (111) and the layers are etched together; the a-ITO layer (112) is then converted to a p-ITO layer (114); and the difference in etching resistance between the p-ITO layer (114) and a transparent electrode layer formed above the p-ITO layer is used to layer the transparent electrode layer and to vary the thickness of the transparent electrode layer (121) between subpixels (71R, 71G, 71B).

Description

Display device manufacturing method and display device

The present invention relates to a method of manufacturing a display device in which a transparent electrode layer is laminated on a reflective electrode layer in each sub-pixel, and a total thickness of the transparent electrode layers is different between sub-pixels having different display colors, and such a display device.

In recent years, flat panel displays have been used in various products and fields, and further increase in size, high image quality, and low power consumption of flat panel displays are required.

In the above-described situation, an organic EL display device having an organic EL element using electroluminescence (Electro Luminescence, hereinafter referred to as "EL") of an organic material is used as an all-solid type and is driven at a low voltage. Flat panel displays with excellent responsiveness, self-illumination, and wide viewing angles are highly regarded.

The organic EL display device has, for example, a configuration in which an organic EL element electrically connected to a TFT is provided on a substrate including a glass substrate provided with a TFT (Thin Film Transistor).

The organic EL element is a light-emitting element that emits high-intensity light by low-voltage direct current driving, and has a structure in which a first electrode, an organic EL layer, and a second electrode are laminated in this order.

As a method for fully coloring the organic EL display device using the organic EL element as described above, for example, (1) organic light emitting red (R), green (G), and blue (B) is known. The EL element is arranged as a sub-pixel on the substrate, and (2) the white-emitting organic EL element and the filter are combined to select the luminescent color in each sub-pixel.

In recent years, there has been proposed a method of improving luminescence chromaticity or luminescence efficiency by using a microcavity effect (see, for example, Patent Documents 1 and 2).

The term "microcavity" refers to a phenomenon in which the emitted light is reflected by the light emitted from the anode and the cathode and resonated, and the emission spectrum becomes steep, and the luminous intensity of the peak wavelength is amplified.

The microcavity effect can be obtained by designing, for example, the reflectance and film thickness of the anode or the cathode, the layer thickness of the organic layer, and the like as optimum.

As a method of introducing the above-described resonant structure, that is, a microcavity structure, to the organic EL element, for example, a method of changing the optical path length of the organic EL element in each sub-pixel for each luminescent color is known.

As a method of changing the optical path length of the organic EL element in each sub-pixel for each luminescent color, a method of laminating an organic EL layer including a light-emitting layer and a transparent electrode layer between a reflective electrode and a semi-transparent electrode is exemplified.

That is, for example, in the case of the top emission type organic EL element, a method in which the anode is a laminated structure of a reflective electrode layer and a transparent electrode layer, and the reflective electrode layer of the anode is changed for each sub-pixel The film thickness of the transparent electrode layer.

In the case of the top emission type organic EL device, the anode is set as a laminated structure of the reflective electrode layer and the transparent electrode layer, and after the organic EL layer is appropriately laminated, for example, a semitransparent silver or the like which is formed into a thin film is used for the cathode. As the translucent electrode, the organic EL element can be introduced into the microcavity structure.

When the organic EL element is introduced into the microcavity structure as described above, the spectrum of the light emitted from the light-emitting layer and emitted through the cathode becomes steeper than the case where the organic EL element does not have the microcavity structure, and the emission intensity toward the front surface is large. Increase in amplitude Big.

Patent Literatures 1 and 2 disclose an organic EL display device in which an organic EL element is introduced into a microcavity structure by laminating a transparent electrode layer of the same material by changing the number of layers for each sub-pixel.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Laid-Open Patent Publication No. 2007-280677 (published on October 25, 2007)

[Patent Document 2] Japanese Laid-Open Patent Publication No. 2005-116516 (published on Apr. 28, 2005)

[Patent Document 3] Japanese Laid-Open Patent Publication No. 2009-129604 (published on June 11, 2009)

However, in the organic EL display device in which the luminescence color is changed by changing the film thickness of the transparent electrode layer as described above, the film thickness of the transparent electrode layer is appropriately changed for each sub-pixel of each color. The method is still unclear.

Further, Patent Document 1 does not disclose a method for changing the film thickness of a transparent electrode for each sub-pixel of each color.

On the other hand, in Patent Document 2, as a method of changing the film thickness of the transparent electrode for each sub-pixel of each color by using the same material for the laminated transparent electrode layer, the following method is disclosed.

First, the sub-layer resist pattern is changed in the order of B → G → R The pixels are alternately laminated with a transparent electrode layer and a resist pattern on the reflective electrode layer.

Then, after the resist pattern of the sub-pixel of R is laminated, the resist pattern of the sub-pixel of R is used as a mask to etch the uppermost transparent electrode layer, and the resist pattern of the sub-pixel of G is exposed. In this case, R and G are used. The resist pattern of the sub-pixels is a mask, and the second transparent electrode layer is etched from top to bottom.

Then, the resist pattern of the sub-pixels of B is exposed. At this time, the resist pattern of the sub-pixels of R, G, and B is used as a mask, and the transparent electrode layer of the lowermost layer is etched to form all the transparent electrode layers.

Finally, the resist pattern of the sub-pixels of R, G, and B is used as a mask, and the reflective electrode layer is etched and patterned.

However, in Patent Document 2, in order to laminate a transparent electrode layer on a resist pattern, if the adhesion between the resist and the transparent electrode layer is insufficient, film peeling of the transparent electrode layer occurs during the process, resulting in poor pattern. Or the danger of step contamination.

In addition, when a substrate in which a resist is laminated is placed in a sputtering apparatus, foreign matter such as garbage adheres, and the yield is lowered, and defects or film thickness unevenness and film quality unevenness (optical properties) are caused. The possibility of distribution within.

Further, as described in Patent Document 2, when a transparent electrode is laminated on a resist pattern, if the thickness of the resist pattern is thick, the portion of the shadow of the resist pattern becomes large, and the shadow is formed. A defect occurs in a part of the transparent electrode layer, or a film thickness unevenness is generated. Therefore, it is difficult to set the transparent electrode layer to be the film thickness suitable for the sub-pixels of the respective colors, and it is not possible to form the sub-pixels in a high-definition pattern.

Therefore, if only the transparent electrode layer is simply laminated, it is difficult to change the film thickness of the transparent electrode for each sub-pixel of each color.

As a method of changing the film thickness of the transparent electrode for each sub-pixel of each color, for example, the following method is considered.

13(a) to (f) are cross-sectional views showing, in order, an example of a method of changing the film thickness of the transparent electrode layer on the reflective electrode layer of the anode for each sub-pixel.

Hereinafter, a method of changing the film thickness of the transparent electrode layer on the reflective electrode layer of the anode for each sub-pixel as described above will be described with reference to FIGS. 13(a) to 13(f).

First, as shown in FIG. 13(a), a reflective electrode layer 302 containing a reflective electrode material such as silver (Ag) is formed on the support substrate 301 by sputtering.

Then, for each sub-pixel of each color, a resist pattern (not shown) is formed on the reflective electrode layer 302 by photolithography, and the reflective electrode layer 302 is etched by using the resist pattern as a mask. The resist patterns are peeled off by the resist stripping solution.

Thereby, as shown in FIG. 13(b), the reflective electrode layer 302 is patterned for each sub-pixel of each color.

Then, as shown in FIG. 13(c), for example, IZO (Indium Zinc Oxide) is formed on the reflective electrode layer 302 to form the IZO layer 303 as a transparent electrode layer, and by photolithography, only R The sub-pixels form a resist 311.

Then, as shown in FIG. 13(d), the exposed IZO layer 303 is etched by oxalic acid to remove it, and then the resist 311 is peeled off, thereby only R The sub-pixels form the patterned IZO layer 303 as the first IZO layer.

Then, as shown in FIG. 13(e), IZO is formed again by covering the IZO layer 303 of the sub-pixels of R and the reflective electrode layer 302 of the sub-pixels of G and B to form the IZO layer 304, and further, by photolithography The resist 312 is formed only on the sub-pixels of R and G.

Then, as shown in FIG. 13(f), the IZO layer 304 is etched by oxalic acid using the resist 312 as a mask, and the resist 312 is peeled off, thereby forming patterned patterns on the sub-pixels R and G. The IZO layer 304 serves as a second IZO layer.

In this way, if the number of layers of the transparent electrode layer is changed for each sub-pixel in order to obtain the microcavity effect, at least three times of photolithography is required when, for example, the sub-pixel includes sub-pixels of R, G, and B. And etching, resist stripping.

In other words, in order to change the film thickness of the transparent electrode layer on the reflective electrode layer of the anode for each sub-pixel, as shown in (a) to (f) of FIG. 13, three times of photolithography is required. Furthermore, if the patterning of the reflective electrode layer is included, four photolithography is required. Further, in Fig. 13 (f), in the case where the pixel of B is further formed into a transparent electrode layer, more photolithography is required.

Therefore, as described above, if the thickness of the electrode is changed for each sub-pixel using a transparent electrode layer of the same material in order to obtain a microcavity effect, it is necessary to perform at least 3 times (if a pattern for reflecting the electrode layer is included) Huaguang lithography, at least 4 times) photolithography and etching, resist stripping device. Therefore, the number of photolithography apparatuses (photo process apparatuses) required for the above processing required on the manufacturing line is increased.

In photolithography, expensive devices or materials are required. Therefore, if above Changing the thickness of the electrode for each sub-pixel generally results in an increase in cost and an increase in footprint of the entire device.

Further, since photolithography requires development processing or baking treatment for a fixed period of time, it is difficult to shorten the processing tempo.

Therefore, it is desirable to make the number of photolithography as small as possible.

Further, when the resist is peeled off and baked as described above, when the number of repetitions is increased, the surface of the reflective electrode layer is rough or oxidized, and the reflection efficiency is lowered. Further, there is a problem that pixel leakage occurs due to surface roughness of the reflective electrode and leakage between the electrodes.

Further, depending on the type of the reflective electrode material, when the reflective electrode layer is in an exposed state (that is, in an exposed state), for example, when ultraviolet light is irradiated to improve the wettability of the resist, oxidation occurs, and reflection characteristics are lowered, or solvent resistance is caused. The possibility of low solubility and solvent penetration. Therefore, in the case where the reflective electrode layer as described above contains the reflective electrode material as described above, it is not preferable that the reflective electrode layer is in an exposed state.

Therefore, if a transparent electrode layer is to be laminated on the reflective electrode layer of each sub-pixel, photolithography is required for this, and the number of photolithography is further increased.

Further, Patent Document 3 discloses a method of forming a crystalline amorphous ITO on a patterned reflective electrode layer by patterning and forming a patterned amorphous reflective layer. The ITO of the quality is used to change the film thickness of the transparent electrode layer for each sub-pixel by secondary photolithography. That is, in Patent Document 3, when the patterning of the reflective electrode layer is included, the number of photolithography is three times.

However, in Patent Document 3, after the crystalline ITO is formed in the first and third sub-pixels and patterned, the amorphous ITO is laminated on the first sub-pixel and the second sub-pixel and patterned. Thereby, the film thickness of the transparent electrode layer is changed for each sub-pixel.

That is, Patent Document 3 forms a pattern of a transparent electrode layer having the same film thickness in two sub-pixels every time the photolithography is performed, and changes the sub-pixels forming the pattern of the transparent electrode layer for each photolithography, thereby reducing the light micro-pattern. Since the number of times of shadowing is performed, the crystalline ITO is etched to form a pattern of transparent electrode layers having the same film thickness in two sub-pixels.

Therefore, in Patent Document 3, the optical path length of each sub-pixel is determined by the combination of the film thicknesses of the two transparent electrode layers. Therefore, there is a restriction on the setting of the optical path length, and it is difficult to arbitrarily change the optical path length.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a transparent electrode layer laminated on a reflective electrode layer in each sub-pixel, and to arbitrarily change a reflective electrode layer between sub-pixels having different display colors. A method of manufacturing a practical display device for film thickness of a transparent electrode layer, and reducing the number of photolithography. Further, it is a further object of the present invention to provide a display device which can be manufactured by a practical method with respect to a film thickness of a transparent electrode layer for each sub-pixel having a different display color.

In order to solve the above problems, a method of manufacturing a display device according to the present invention is characterized in that, among the pair of electrodes forming an electric field in each sub-pixel of the display device, one of the electrodes includes a reflective electrode layer and at least a reflective electrode layer formed thereon a transparent electrode layer and reflected in at least one sub-pixel a plurality of layers of the transparent electrode layer are formed on the electrode layer, and the film thickness of the transparent electrode layer is different between sub-pixels having different display colors. The method for manufacturing the display device comprises the steps of: forming a reflective electrode layer; and forming a first transparent electrode a layer forming step of forming a first transparent electrode layer containing an amorphous transparent electrode material on the upper surface of the reflective electrode layer; and a patterning step of the amorphous layer by photolithography The first transparent electrode layer and the reflective electrode layer of the transparent electrode material are collectively etched and patterned, and the first transparent electrode layer crystallization step is performed by patterning the patterning step. a first transparent electrode layer in which a first transparent electrode layer of a crystalline transparent electrode material is crystallized and converted into a polycrystalline transparent electrode material; and a second transparent electrode layer lamination step is performed on the polycrystalline layer containing On the first transparent electrode layer of the transparent electrode material, the second transparent electrode material containing the first transparent electrode layer having a lower etching resistance than the polycrystalline transparent electrode material is formed. The transparent electrode layer is selectively patterned by photolithography to etch the second transparent electrode layer.

As described above, according to the present invention, the first transparent electrode layer containing the amorphous transparent electrode material is formed on the upper surface of the reflective electrode layer, and the reflective electrode layer and the first transparent electrode containing the amorphous transparent electrode material are formed. The layers are collectively etched, whereby the first transparent electrode layer containing the polycrystalline transparent electrode material may be laminated on the reflective electrode layer without increasing the number of photolithography.

Further, according to the above method, the first transparent electrode layer containing the amorphous transparent electrode material is converted into the first transparent electric material containing the polycrystalline transparent electrode material. In the electrode layer, the transparent electrode layer is laminated by the difference in etching resistance between the second transparent electrode layer formed thereon and the second transparent electrode layer formed thereon.

According to the above method, the first transparent electrode layer having a polycrystalline transparent electrode material having higher etching resistance than the second transparent electrode layer is laminated under the second transparent electrode layer, and the upper layer is formed as an upper layer. When the second transparent electrode layer is etched, the lower first transparent electrode layer is not etched. Further, according to the above method, before the second transparent electrode layer is formed, the first transparent electrode layer containing the polycrystalline transparent electrode material is laminated on each sub-pixel, and the second transparent electrode can be laminated in any sub-pixel. Floor.

Therefore, according to the above method, the transparent electrode layer is formed on the reflective electrode layer of each sub-pixel, and the number of photolithography required to change the total film thickness of the transparent electrode layers in each sub-pixel can be utilized. The total film thickness of the transparent electrode layer is arbitrarily changed for each sub-pixel by secondary photolithography. Further, according to the above method, even if the etching of the reflective electrode layer is included, the number of photolithography can be suppressed to three times.

Therefore, according to the above method, even if the number of photolithography is reduced as described above, the film thickness of the second transparent electrode layer in any of the sub-pixels can be made independent of the film thickness of the second transparent electrode layer in the other sub-pixels. And set.

That is, even if it is not as in the case of the patent document 3, in order to deposit a transparent electrode layer, a crystalline ITO layer is formed and patterned, and a transparent electrode layer of the same film thickness is formed in two sub-pixels every time photomicrography. The pattern can also form a transparent electrode layer on the reflective electrode layer of each sub-pixel by using 2 times photolithography, and can be formed for each sub-pixel having different display colors. An electrode having a total thickness of the transparent electrode layers on the reflective electrode layer.

Therefore, according to the above method, the optical path length in each sub-pixel can be arbitrarily and easily adjusted without being restricted by the optical path length as in Patent Document 3. Therefore, according to the above method, the film thickness of the transparent electrode layer on the reflective electrode layer can be arbitrarily changed for the sub-pixels having different display colors by using less than the previous photolithography.

As a result, a reduction in cost and a reduction in occupied area can be achieved.

Further, in the prior method, since the peeling and baking steps of the resist are increased, the surface of the reflective electrode layer is rough or oxidized to lower the reflection efficiency, or leakage between the electrodes occurs due to the surface roughness of the reflective electrode layer. The result is a flaw in pixel defects.

However, according to the above method, since the number of times of exposure, development, resist stripping treatment, and the like can be reduced, there is no fear as described above. Also, the processing beat can be shortened.

Further, depending on the type of the reflective electrode material, when the reflective electrode layer is in an exposed state (that is, in an exposed state), for example, when ultraviolet light is irradiated to improve the wettability of the resist, oxidation occurs, and reflection characteristics are lowered, or solvent resistance is caused. The possibility of low solubility and solvent penetration. Therefore, in the case where the reflective electrode layer as described above contains the reflective electrode material as described above, it is not preferable that the reflective electrode layer is in an exposed state.

However, according to the above method, by forming the polycrystalline transparent electrode layer on the reflective electrode layer in each sub-pixel as described above in the early stage of the manufacturing step, the reflective electrode layer can be protected from damage to the reflective electrode. The influence of the above factors on the quality of the layer.

Further, in Patent Document 3, after patterning the reflective electrode layer, crystalline ITO is formed on the first and third sub-pixels and patterned.

The solubility of the crystalline ITO with respect to the etching liquid used for etching the reflective electrode layer is high. Therefore, when a crystalline ITO layer is directly formed on the reflective electrode layer and patterned by photolithography, the reflective electrode layer is not tapered.

However, according to the above method, the first transparent electrode layer containing the amorphous transparent electrode material is formed and patterned together with the reflective electrode layer, and then converted into a polycrystalline transparent electrode layer, whereby Nor will it cause the problems described above.

According to the above method, it is possible to provide a transparent electrode layer on the reflective electrode layer in each sub-pixel, and to arbitrarily change the film thickness of the transparent electrode layer on the reflective electrode layer between sub-pixels having different display colors. The manufacturing method of the display device and the number of times of photolithography can be reduced.

Further, in order to solve the above problems, a display device according to the present invention is characterized in that, among the pair of electrodes forming an electric field in each sub-pixel, one of the electrodes includes a reflective electrode layer and at least one transparent electrode layer formed on the reflective electrode layer. Further, a plurality of the transparent electrode layers are formed on the reflective electrode layer of at least one of the sub-pixels, and the thickness of the transparent electrode layer is different between the sub-pixels having different display colors, and the plurality of transparent electrode layers are different from each other. The etch resistance of the lower transparent electrode layer is higher than that of the upper transparent electrode layer.

The display device as described above may not convert a transparent electrode layer containing an amorphous transparent electrode material into a transparent electrode containing a polycrystalline transparent electrode material. In the layer, the deposition of the transparent electrode layer is performed by utilizing the difference in etching selectivity due to the difference in etching resistance between the transparent electrode layer of the lower layer and the transparent electrode layer of the upper layer.

Therefore, the optical path length in each sub-pixel can be arbitrarily and easily adjusted in a shorter processing tempo than in the case where the transparent electrode layer containing the same transparent electrode material is stacked as before.

Therefore, according to the present invention, it is possible to provide a display device in which the thickness of the transparent electrode layer is different for each sub-pixel having a different display color and can be manufactured by a practical method.

As described above, in the method of manufacturing a display device of the present invention, the first transparent electrode layer containing an amorphous transparent electrode material is formed on the upper surface of the reflective electrode layer, and the reflective electrode layer and the amorphous layer are transparent. The first transparent electrode layer of the electrode material is collectively etched.

Therefore, according to the above manufacturing method, the first transparent electrode layer containing the polycrystalline transparent electrode material can be laminated on the reflective electrode layer without increasing the number of photolithography.

Further, in the method of manufacturing a display device of the present invention, the first transparent electrode layer containing an amorphous transparent electrode material is converted into a first transparent electrode layer containing a polycrystalline transparent electrode material, and is formed and formed thereon. A transparent electrode layer is laminated on the difference in etching resistance of the second transparent electrode layer above it.

According to the above manufacturing method, the first transparent electrode layer containing the polycrystalline transparent electrode material having higher etching resistance than the second transparent electrode layer is laminated under the second transparent electrode layer as described above. Upper layer When the second transparent electrode layer is etched, the lower first transparent electrode layer is not etched. Further, according to the above manufacturing method, the first transparent electrode layer containing the polycrystalline transparent electrode material is laminated in each sub-pixel before the formation of the second transparent electrode layer, whereby the above-described first sub-pixel can be laminated 2 transparent electrode layer.

Therefore, according to the above manufacturing method, the transparent electrode layer is formed on the reflective electrode layer of each sub-pixel, and the number of photolithography required to change the total film thickness of the transparent electrode layer in each sub-pixel can be The total film thickness of the transparent electrode layer was arbitrarily changed for each sub-pixel by secondary photolithography. Further, according to the above production method, even if the etching of the reflective electrode layer is included, the number of photolithography can be suppressed to three times.

Therefore, according to the above manufacturing method, even if the number of photolithography is reduced as described above, the film thickness of the second transparent electrode layer in any of the sub-pixels can be made independent of the film of the second transparent electrode layer among the other sub-pixels. Thick and set.

Therefore, according to the above-described manufacturing method, the optical path length in each sub-pixel can be arbitrarily and easily adjusted without being restricted by the optical path length as in Patent Document 3. Therefore, according to the above-described manufacturing method, the film thickness of the transparent electrode layer on the reflective electrode layer can be arbitrarily changed for each sub-pixel having a different display color than the previous photolithography.

Further, as described above, the display device of the present invention is characterized in that a plurality of transparent electrode layers are provided on the reflective electrode layer, and the film thickness of the entire transparent electrode layer is different for each sub-pixel having a different display color. The transparent electrode layers have mutually different compositions, and the etching resistance of the lower transparent electrode layer is higher than that of the upper transparent electrode layer.

The display device as described above can convert the transparent electrode layer containing the amorphous transparent electrode material into the transparent electrode layer containing the polycrystalline transparent electrode material, and utilize the etching resistance of the lower transparent electrode layer and the upper transparent electrode layer. The difference in etching selectivity due to the difference is caused by the deposition of the transparent electrode layer.

Therefore, the optical path length in each sub-pixel can be arbitrarily and easily adjusted in a shorter processing tempo than in the case where the transparent electrode layer containing the same transparent electrode material is stacked as before.

Therefore, according to the present invention, it is possible to provide a display device in which the thickness of the transparent electrode layer is different for each sub-pixel having a different display color and can be manufactured by a practical method.

Hereinafter, an embodiment of the present invention will be described in detail.

[Embodiment 1]

According to Figure 1 (a) ~ (i) to Figure 9 (a). (b) The present embodiment will be described below.

<Schematic Configuration of Organic EL Display Device>

First, a schematic configuration of an organic EL display device will be described.

FIG. 2 is an exploded cross-sectional view showing a schematic configuration of a main part of the organic EL display device 100 of the present embodiment.

As shown in FIG. 2, the organic EL display device 100 of the present embodiment includes a pixel portion 101 and a circuit portion 102.

The pixel portion 101 includes an organic EL display panel 1 (display panel). Further, the circuit unit 102 includes a drive circuit or the like that drives the organic EL display device 100. A circuit board or an IC (Integrated Circuits) wafer or the like.

The organic EL display panel 1 has a configuration in which the organic EL element 20, the sealing resin layer 41, the filling resin layer 42, and the sealing substrate 50 are sequentially provided on the support substrate 10 (film formation substrate, TFT substrate).

The support substrate 10 includes a semiconductor substrate such as a TFT substrate, and has, for example, a TFT (Thin Film Transistor) 12 (see FIG. 5) or the like as an active device (driving element).

The organic EL element 20 is connected to the TFT 12. A filling resin layer 42 having an adhesive property containing a desiccant is formed on the organic EL element 20. The filling resin constituting the filled resin layer 42 is filled in a space surrounded by the support substrate 10, the sealing substrate 50, and the sealing resin layer 41.

In addition, the organic EL display device 100 may be a bottom emission type that emits light from the side of the self-supporting substrate 10 or a top emission type that emits light from the side of the self-sealing substrate 50.

As the base substrate used in the support substrate 10 and the sealing substrate 50, for example, glass, plastic, or the like can be used. As an example, a glass substrate such as an alkali-free glass substrate can be used.

However, the present invention is not limited thereto, and an opaque material such as a metal plate may be used as the substrate on the side where the light is not emitted.

In the case of the top emission type, as the sealing substrate 50, a substrate on which a CF (Color Filter) layer is formed may be used. Further, in the case of the bottom emission type, the CF layer may be formed on the side of the support substrate 10.

When the CF layer is used in combination as described above, the spectrum of the light emitted from the organic EL element 20 can be adjusted by the CF layer.

Hereinafter, in the present embodiment, a case where the organic EL display device 100 is of a top emission type will be described as an example. However, the present embodiment is not limited thereto, and may be, for example, a bottom emission type as described above.

As shown in FIG. 2, the sealing substrate 50 of the present embodiment has a configuration in which, for example, a CF layer 52 and a BM (Black Matrix) 53 (see FIG. 5) are provided on the insulating substrate 51.

In the organic EL element 20, the support substrate 10 in which the organic EL element 20 is laminated is bonded to the sealing substrate 50 via the sealing resin layer 41 and the filling resin layer 42 provided in the frame-shaped sealing region L, and is sealed in the sealing substrate 50. The pair of substrates (the support substrate 10 and the sealing substrate 50) are disposed such that the organic EL element 20 is not damaged by moisture or oxygen.

In the organic EL display panel 1 , the organic EL element 20 is sealed between the support substrate 10 and the sealing substrate 50 in such a manner as to prevent oxygen or moisture from penetrating into the organic EL element 20 from the outside.

Further, a terminal portion region R3 in which an electric wiring terminal 2 (electrical connection portion, connection terminal) or the like is formed is provided on the outer side of the frame-shaped sealing region L in the support substrate 10.

The electric wiring terminal 2 is a connection terminal to which the connection terminal 103 of the circuit portion 102 is connected, and is formed of a wiring material such as metal.

The circuit unit 102 is provided with, for example, a wiring such as a flexible film cable or a drive circuit such as a driver.

As shown in FIG. 2, the circuit portion 102 is connected to the organic EL display panel 1 via the electric wiring terminal 2 provided in the terminal portion region R3.

<Configuration of Support Substrate 10>

Here, each region in the support substrate 10 including the terminal portion region R3 will be described below with reference to FIG. 3.

FIG. 3 is a plan view showing a schematic configuration of the support substrate 10 in the organic EL display device 100.

As shown in FIG. 3, a display region R1, a second electrode connection region R2, a terminal portion region R3, and a frame-shaped sealing region L are provided on one main surface of the active surface (active element forming surface) of the support substrate 10.

<display area R1>

The display region R1 (display portion) is provided at a central portion of the support substrate 10, and is formed, for example, in a rectangular shape. A pixel array including a plurality of sub-pixels 71 (see FIGS. 4 and 5) is formed in the display region R1. In addition, the configuration of the display region R1 will be described in detail below.

<Second electrode connection region R2>

The second electrode connection region R2 is connected to a region of the second electrode 31 (see FIG. 5) of the organic EL element 20. For example, the second electrode connection region R2 is formed on the outer side of the pair of the pair of the pair of the display regions R1, and is formed along the opposite sides.

A connection portion 60 (connection electrode) is formed in each of the second electrode connection regions R2. The connecting portion 60 is a portion that connects the second electrode 31 and is formed of a metal material.

<Sealing area L>

As described above, the sealing resin layer 41 for bonding the support substrate 10 and the sealing substrate 50 is formed in the sealing region L.

As shown in FIG. 3, the sealing region L surrounds the display region R1 and the second electrode. The form of the connection region R2 is formed in a frame shape.

<terminal portion area R3>

As described above, the terminal portion region R3 is a region for connecting the pixel portion 101 and the circuit portion 102. The terminal portion region R3 is provided on the outer side of the frame-shaped sealing region L, and is provided along the frame-shaped sealing region L.

Specifically, as shown in FIG. 3, the terminal portion region R3 is formed on the outer side of each of the second electrode connection regions R2, and is formed along each of the second electrode connection regions R2. Further, the terminal portion region R3 is formed on the outer side of the other side of the display region R1 where the second electrode connection region R2 is not provided, and is formed along the opposite side.

Further, the terminal portion region R3 does not need to exist on all sides, and for example, it may be formed only on one side.

<Configuration of display area R1>

Next, the configuration of the display region R1 will be described.

4 is a plan view showing a configuration of a main portion of the display region R1 in the support substrate 10, and FIG. 5 is a view showing a schematic configuration of the organic EL display panel 1 when the organic EL display panel 1 is cut along the AA line shown in FIG. Sectional view.

As shown in FIGS. 4 and 5, the display region R1 is composed of a plurality of pixels 70 in which the organic EL element 20 is formed.

Each of the pixels 70 includes a plurality of sub-pixels 71. The organic EL display device 100 is a full-color active matrix type organic EL display device. For example, as shown in FIG. 5, a sub-pixel 71 (hereinafter referred to as "sub-pixel 71R") that emits red (R) light is emitted. Sub-pixel 71 of green (G) color light (hereinafter referred to as "sub-pixel 71G") and sub-pixel 71 emitting light of blue (B) color (hereinafter, referred to as "sub 3 sub-pixels 71R of the pixel 71B"). 71G. 71B constitutes one pixel 70.

In the display region R1, the sub-pixels 71 of the respective colors including the organic EL elements 20 having the luminescent colors of the respective colors of R, G, and B are arranged in a matrix. In this embodiment, each sub-pixel 71R. 71G. 71B is arranged in such a manner that sub-pixels 71 of the same luminescent color are adjacent to one of the X-axis direction (lateral direction) and the Y-axis direction (longitudinal direction) in the active surface of the support substrate 10 (for example, the X-axis direction). In the other direction (for example, the Y-axis direction), the sub-pixels 71 of different illuminating colors are adjacent.

As shown in FIGS. 4 and 5, in the display region R1, a plurality of signal lines 14 (wiring) are arranged in the X-axis direction and the Y-axis direction.

The signal line 14 includes, for example, a plurality of lines (gate lines) for selecting pixels, a plurality of lines (source lines) for writing data, and a plurality of lines (power lines) for supplying electric power to the organic EL element 20.

Further, the gate line is laid along the X-axis direction, for example, and the source line is laid along the Y-axis direction so as to intersect the gate line.

Further, a gate line driving circuit (not shown) for driving a gate line is connected to the gate line, and a data line driving circuit (not shown) for driving the source line is connected to the source line.

Each of the sub-pixels 71 is arranged in a region surrounded by the signal lines 14. That is, the area surrounded by the signal lines 14 is one sub-pixel 71, and the light-emitting area 72 of each color is formed for each sub-pixel 71.

The signal lines 14 are connected to the external circuit of the circuit unit 102 outside the display region R1. By inputting an electrical signal to the signal line 14 from the circuit unit 102, the organic EL element 20 disposed at the intersection of the signal line 14 can be driven (transmitted) Light).

In each sub-pixel 71R. 71G. Each of the 71B is provided with a TFT 12 connected to the first electrode 21 of the organic EL element 20.

The signal line 14 is connected to the TFT 12 provided in each of the sub-pixels 71. In the case of the active matrix type, at least one TFT 12 is disposed in each sub-pixel 71.

Further, a capacitor for holding the written voltage or a compensation circuit for compensating for variations in the characteristics of the TFT 12 may be formed in each of the sub-pixels 71.

The light emission intensity of each sub-pixel 71 is determined by scanning and selection of the signal line 14 and the TFT 12. The organic EL display device 100 uses the TFT 12 to selectively cause the organic EL element 20 to emit light at a desired luminance, thereby realizing image display.

<Sectional Structure of Support Substrate 10>

As shown in FIGS. 4 and 5, the support substrate 10 includes an insulating substrate 11 as a base substrate.

As shown in FIG. 5, in the display region R1, the support substrate 10 has a TFT 12 (switching element), a signal line 14, an interlayer insulating film 13 (planarizing film), and a side cover formed on a transparent insulating substrate 11 such as a glass substrate. (edge cover) 15 and so on.

A signal line 14 is disposed on the insulating substrate 11 and corresponds to each sub-pixel 71R. 71G. The TFT 12 is provided separately for 71B. Furthermore, the composition of the TFT is well known previously. Further, the TFT 12 is fabricated by a known method. Therefore, the illustration and description of each layer in the TFT 12 are omitted.

The interlayer insulating film 13 is covered to cover each sub-pixel 71R. 71G. 71B and signal line 14 are laminated on the insulating substrate over the entire area of the insulating substrate 11. 11 on.

The first electrode 21 of the organic EL element 20 is formed on the interlayer insulating film 13.

Further, the interlayer insulating film 13 is provided with a contact hole 13a for electrically connecting the first electrode 21 of the organic EL element 20 to the TFT 12. Thereby, the TFT 12 is electrically connected to the organic EL element 20 via the contact hole 13a.

The side cover 15 is used to prevent the first electrode 21 and the second electrode of the organic EL element 20 from being thinned or concentrated by the organic EL layer 43 described later at the end portion (pattern end portion) of the first electrode 21 31 Short-circuited insulation (barrier).

The side cover 15 is formed on the interlayer insulating film 13 so as to cover the end portion (pattern end portion) of the first electrode 21.

In the side cover 15, for each sub-pixel 71R. 71G. 71B is provided with an opening 15R. 15G. 15B. Thereby, as shown in FIG. 5, the first electrode 21 is exposed in a portion (opening portion 15R.15G.15B) where the side cover 15 is not present. The exposed portion becomes each sub-pixel 71R. 71G. Illumination area 72 of 71B.

<Configuration of Organic EL Element 20>

In the present embodiment, a microcavity structure is introduced into each sub-pixel 71 by using a light-emitting layer having a white (W) color of luminescent color, and as described above, full-color image display is realized.

At this time, by using the CF layer 52 in combination as described above, the spectrum of the light emitted from the organic EL element 20 can be adjusted by the CF layer 52.

The organic EL element 20 is a light-emitting element that emits high-intensity light by low-voltage direct current driving, and the first electrode 21, the organic EL layer 43, and the second electrode 31 are laminated in this order.

The first electrode 21 has a function of injecting (supplying) a hole into the organic EL layer 43. The first electrode 21 is connected to the TFT 12 via the contact hole 13a.

Further, the second electrode 31 has a function of injecting (supplying) electrons into the organic EL layer 43.

When the light-emitting layer of the W light-emitting layer and the CF layer 52 are combined as described above, the carrier transport layer (hole transport layer, electron transport layer) and the light-emitting layer are laminated via the carrier generation layer.

Specifically, as shown in FIG. 5, the organic EL layer 43 is formed between the first electrode 21 and the second electrode 31, and the hole injection layer 22 and the hole are sequentially formed from the first electrode 21 side. The transport layer 23, the first light-emitting layer 24, the electron transport layer 25, the carrier-generating layer 26, the hole transport layer 27, the second light-emitting layer 28, the electron transport layer 29, and the electron injection layer 30. Further, the first luminescent layer 24 and the second luminescent layer 28 have different luminescent colors, and the luminescent colors are superimposed to obtain W luminescence.

Examples of the combination of the above-described luminescent colors include a combination of blue light and yellow (more preferably yellow (orange) having green and red peak intensity), a combination of blue light and yellow light, and the like. Further, as described below, when the third light-emitting layer is laminated in addition to the first light-emitting layer 24 and the second light-emitting layer 28, when the light emission is obtained by the overlapping of the three color light colors, the light-emitting color is obtained. A combination of red light, blue light, and green light can be cited.

Further, in the present embodiment, the light-emitting layer of the blue luminescent color is formed as the first luminescent layer 24, and the luminescent layer of the orange luminescent color is formed as the second luminescent layer 28.

The first light-emitting layer 24 and the second light-emitting layer 28 are laminated as a light-emitting layer In the case of the organic EL element 20, light obtained by adding a microcavity effect to the mixture of the light emitted from the first light-emitting layer 24 and the second light-emitting layer 28 is obtained. Further, by adjusting the light by the CF layer 52 provided on the sealing substrate 50, light having a desired spectrum can be extracted to the outside. By combining the light-emitting layer of W light, the microcavity effect, and the CF layer 52 in this manner, the color purity can be improved.

The hole injection layer 22 has a function of increasing the efficiency of injection of holes from the first electrode 21 to the organic EL layer 43. On the other hand, the electron injection layer 30 has a function of increasing the efficiency of electron injection from the second electrode 31 to the organic EL layer 43.

Further, the hole transport layer 23 has a function of improving the hole transport efficiency of the first light-emitting layer 24, and the hole transport layer 27 has a function of improving the hole transport efficiency of the second light-emitting layer 28.

On the other hand, the electron transport layer 25 has a function of improving the electron transport efficiency of the first light-emitting layer 24, and the electron transport layer 29 has a function of improving the electron transport efficiency of the second light-emitting layer 28.

Each of the first light-emitting layer 24 and the second light-emitting layer 28 has a function of recombining a hole injected from the first electrode 21 side with electrons injected from the second electrode 31 side to emit light. Each of the first light-emitting layer 24 and the second light-emitting layer 28 is formed of a material having high light-emitting efficiency such as a low molecular weight fluorescent dye or a metal complex.

Further, the carrier generating layer 26 is for supplying electrons to the first light-emitting layer 24 side and supplying a layer of holes to the second light-emitting layer 28 side.

In other words, when the hole transport layer, the light-emitting layer, and the electron transport layer are considered as one unit, the unit on the first light-emitting layer 24 side and the unit on the second light-emitting layer 28 side are connected via the carrier generation layer 26 .

In the organic EL display device 100 in which the light-emitting layers (for example, the first light-emitting layer 24 and the second light-emitting layer 28) and the CF layer 52 are combined in this manner, the microcavity effect, the CF layer 52, or other methods are utilized. Since the luminescent color of each sub-pixel 71 is changed, it is not necessary to apply a luminescent layer to each sub-pixel 71.

Therefore, in the present embodiment, as shown in FIG. 5, the hole injection layer 22, the hole transport layer 23, the first light-emitting layer 24, the electron transport layer 25, the carrier-generating layer 26, the hole transport layer 27, and the The light-emitting layer 28, the electron-transport layer 29, the electron-injecting layer 30, and the second electrode 31 are formed in the same manner over the entire surface of the display region R1 in the support substrate 10 so as to cover the first electrode 21 and the side cover 15.

In addition, in the case where the hole transport layer, the light-emitting layer, and the electron transport layer are one unit, the unit on the first light-emitting layer 24 side and the unit on the second light-emitting layer 28 side pass through the carrier generation layer. Although the case of connection is described as an example, the present embodiment is not limited to this.

For example, a unit including the third light-emitting layer may be laminated in the same manner, or four or more units may be laminated.

Further, a laminated structure in which the second light-emitting layer and the third light-emitting layer are directly laminated may be provided.

Further, although not illustrated, a carrier blocking layer that blocks the flow of carriers such as holes and electrons may be inserted as needed. For example, by adding a hole blocking layer between the light-emitting layer and the electron-transporting layer as a carrier blocking layer, it is possible to prevent the holes from passing through the electron-transporting layer, thereby improving luminous efficiency. Similarly, by adding an electron blocking layer between the light-emitting layer and the hole transport layer as a carrier blocking layer, electrons can be prevented from passing through the hole transport layer.

Further, an electron injecting layer may be interposed between the electron transporting layer and the carrier generating layer.

As an example of the configuration of the organic EL element 20, for example, a layer configuration as shown in the following (1) to (8) and a combination of the layers can be employed.

(1) First electrode/hole injection layer/hole transport layer/light-emitting layer (first light-emitting layer)/electron transport layer/carrier generation layer/hole transport layer/light-emitting layer (second light-emitting layer)/electron Transport layer / electron injection layer / second electrode

(2) First electrode/hole injection layer/hole transmission layer/light-emitting layer (first light-emitting layer)/electron transport layer/electron injection layer/carrier generation layer/hole transport layer/light-emitting layer (second light-emitting layer) Layer) / electron transport layer / electron injection layer / second electrode

(3) First electrode/hole injection layer/hole transmission layer/light-emitting layer (first light-emitting layer)/hole barrier layer/electron transport layer/carrier generation layer/hole transport layer/light-emitting layer (second Light-emitting layer) / hole barrier layer / electron transport layer / electron injection layer / second electrode

(4) First electrode/hole injection layer/hole transmission layer/electron barrier layer/light-emitting layer (first light-emitting layer)/hole barrier layer/electron transport layer/electron injection layer/carrier generation layer/hole Transport layer/electron barrier layer/light emitting layer (second light emitting layer)/hole blocking layer/electron transport layer/electron injection layer/second electrode

(5) First electrode/hole injection layer/hole transport layer/light-emitting layer (first light-emitting layer)/electron transport layer/carrier generation layer/hole transport layer/light-emitting layer (second light-emitting layer)/electron Transport layer/carrier generation layer/hole transport layer/light-emitting layer (third light-emitting layer)/electron transport layer/electron injection layer/second electrode

(6) First electrode/hole injection layer/hole transmission layer/electron barrier layer/light-emitting layer (first light-emitting layer)/hole barrier layer/electron transport layer/electron injection layer/carrier generation layer/hole Transport layer / electron blocking layer / light emitting layer (second light emitting layer) / hole resistance Retaining layer/electron transport layer/electron injection layer/carrier generation layer/hole transport layer/electron barrier layer/light emitting layer (third light emitting layer)/hole blocking layer/electron transport layer/electron injection layer/second electrode

(7) First electrode/hole injection layer/hole transmission layer/light-emitting layer (first light-emitting layer)/electron transport layer/carrier generation layer/hole transport layer/light-emitting layer (second light-emitting layer)/luminescence Layer (third light-emitting layer) / electron transport layer / electron injection layer / second electrode

(8) First electrode/hole injection layer/hole transmission layer/electron barrier layer/light-emitting layer (first light-emitting layer)/hole barrier layer/electron transport layer/electron injection layer/carrier generation layer/hole Transport layer/electron barrier layer/light emitting layer (second light emitting layer)/light emitting layer (third light emitting layer)/hole blocking layer/electron transport layer/electron injection layer/second electrode

In the present embodiment, a case has been described in which a carrier transport layer (hole transport layer, electron transport layer) and a W-emitting light-emitting layer (first light-emitting layer) are provided via a carrier generation layer. 24. The second light-emitting layer 28) is provided with at least two light-emitting layers of the first light-emitting layer 24 and the second light-emitting layer 28 as light-emitting layers of W light.

However, the organic layer other than the light-emitting layer is not a layer necessary for the organic EL layer 43, and at least one light-emitting layer may be provided. The configuration of the organic EL layer 43 may be appropriately formed in accordance with the characteristics of the desired organic EL element 20.

Therefore, the organic EL element 20 may have a layer configuration as shown in (9), for example.

(9) First electrode/hole injection layer/hole transport layer/light-emitting layer (first light-emitting layer)/electron transport layer/electron injection layer/second electrode

Moreover, a layer may also have a plurality of functions. For example, the hole injection layer and the hole transport layer may be formed as separate layers as described above, or may be formed. They are integrated with each other. That is, a hole injection layer and a hole transport layer integrated with the hole injection layer and the hole transport layer may be provided as the hole injection layer and the hole transport layer.

Similarly, the electron transport layer and the electron injection layer may be formed as separate layers as described above, or may be integrally provided as an electron transport layer and an electron injection layer.

In the above-described lamination sequence, the first electrode 21 is an anode, and the second electrode 31 is a cathode. When the first electrode 21 is a cathode and the second electrode 31 is an anode, the order of lamination of the organic EL layer 43 is reversed.

In addition, the second electrode 31 is a reflective electrode, and the bottom emission type organic EL element 20 is formed by using the first electrode 21 as a translucent electrode.

On the other hand, the first electrode 21 is a reflective electrode, and the second electrode 31 is a semi-transparent electrode to form a top emission type organic EL element 20.

In addition, the configuration of the organic EL element 20 is not limited to the above-described layer configuration, and a desired layer configuration can be explored in accordance with the characteristics of the desired organic EL element 20.

<Image display method>

FIG. 6 is a schematic view for explaining an image display method of the organic EL display device 100 of the present embodiment. In addition, in FIG. 6, the structure which shows the principal part of the optical path of the organic electroluminescent element 20 is simplified.

The organic EL element 20 of the present embodiment has a microcavity structure.

The term "microcavity" refers to a phenomenon in which the emitted light is reflected by the light emitted from the anode and the cathode and resonated, and the emission spectrum becomes steep, and the luminous intensity of the peak wavelength is amplified.

The microcavity effect can be obtained, for example, by designing the reflectance and film thickness of the anode or cathode, the film thickness of the organic layer, and the like to be optimal.

The organic EL element 20 of the present embodiment is a top emission type organic EL element, and as shown in FIG. 6, the second electrode 31 which is a cathode and extracts light emission functions as a translucent electrode (semi-transflective electrode). The first electrode 21 on the side where the anode is not extracted and emits light functions as a reflective electrode by including the reflective electrode layer 111.

Therefore, the light-emitting layer emitted from the light-emitting layer (the first light-emitting layer 24 and the second light-emitting layer 28 in the example shown in FIG. 5) provided in the organic EL layer 43 between the first electrode 21 and the second electrode 31 The reflection between the reflective electrode layer 111 and the second electrode 31 in the first electrode 21 is repeated.

At this time, as shown in FIG. 6, for each illuminating color, each sub-pixel 71R is changed. 71G. The optical path length of the organic EL element 20 in 71B is 73R. 73G. 73B, whereby light emitted from the light-emitting layer reciprocates between the reflective layer of the first electrode 21 and the second electrode 31, and the intensity of light of a specific wavelength is amplified.

In this embodiment, a transparent electrode layer 121 is disposed on the reflective electrode layer 111 for each sub-pixel 71R. 71G. 71B changes the film thickness of the transparent electrode layer 121, thereby changing each sub-pixel 71R. 71G. The optical path length of the organic EL element 20 in 71B is 73R. 73G. 73B.

Specifically, in the present embodiment, as shown in FIGS. 5 and 6 , the first electrode 21 is formed only by the reflective electrode layer 111 in the sub-pixel 71B, and the sub-pixel 71R. 71G is a laminated structure of the reflective electrode layer 111 and the transparent electrode layer 121, and the sub-pixel 71R is formed by one or two layers. The transparent electrode layer 121 on the reflective electrode layer 111 in the 71G, thereby changing each sub-pixel 71R. 71G. 71B The film thickness of the transparent electrode layer 121.

By changing the sub-pixels 71R as such. 71G. The film thickness of the transparent electrode layer 121 in 71B can change the luminescence color by changing the microcavity effect.

Each sub-pixel 71R. 71G. The optical path length of the organic EL element 20 in 71B is 73R. 73G. 73B, that is, each sub-pixel 71R. 71G. The optical distance of the optical path within the microcavity structure in 71B is set in a fixed relationship to the wavelength of the light that should resonate.

That is, by sub-pixels 71R as described above. 71G. In 71B, the distance between the reflective electrode layer 111 of the first electrode 21 and the second electrode 31 is adjusted so that the intensity of the light having the same optical path length is enhanced by resonance, and only the light having the same wavelength is from the second The side of the electrode 31 is emitted. On the other hand, the intensity of light having a wavelength at which the optical path length is shifted is weak.

Therefore, the optical path length is 73R. 73G. 73B is set to an optical length corresponding to the color of the emitted light from the second electrode 31.

As shown in the present embodiment, for example, when the display color in the sub-pixel 71 is R, G, or B, each optical path length is 73R. 73G. 73B is in accordance with the emission spectrum peak wavelengths of the respective colors of R, G, and B, and each optical path length is 73R. 73G. 73B sets each sub-pixel 71R so that the optical path length 73R>the optical path length 73G>the optical path length 73B becomes shorter. 71G. The film thickness of the transparent electrode layer 121 in 71B.

However, since there are a plurality of optical path lengths suitable for resonance of each light, the optical path length 73R>the optical path length 73G>the optical path length 73B may not necessarily be shortened, or may have other relationships.

That is, the transparent electrode layer 121 overlapping the organic EL layer 43 of the R light is set to The transparent electrode layer 121 which is suitable for the resonance of the R light and which overlaps with the organic EL layer 43 of the G light is set to have a thickness suitable for the resonance of the G light, and the transparent electrode layer 121 which is overlapped with the organic EL layer 43 of the B light is set to Suitable for the thickness of the resonance of B light. Thereby, light having a higher color purity can be emitted, and the color reproducibility of the organic EL display device 100 can be improved.

<Method of Manufacturing Organic EL Display Device 100>

Next, a method of manufacturing the organic EL display device 100 of the present embodiment will be described.

First, the outline of the material and the lamination method of each layer in the organic EL element 20 will be described.

<Summary of Materials and Lamination Methods of Each Layer in Organic EL Element 20>

The first electrode 21 is formed by an electrode material by a sputtering method or the like, and then corresponds to each sub-pixel 71R by photolithography, etching, or the like. 71G. 71B and the pattern is formed.

Although a plurality of types of conductive materials can be used as the first electrode 21, in the case of the bottom emission type organic EL element 20 which emits light to the insulating substrate 11 side as described above, it is necessary to be translucent.

On the other hand, in the case of the top emission type organic EL element 20 which emits light from the opposite side of the insulating substrate 11, the second electrode 31 must be translucent.

In the case where the organic EL element 20 is of the top emission type, it is preferable to use an opaque electrode for the reflective electrode layer 111 in the first electrode 21. As the reflective electrode material used in the reflective electrode layer 111, for example, Ag (silver), an Ag alloy, Al (aluminum), an Al alloy, and a laminate (layered film) including a layer containing the electrode materials can be used.

Further, as the transparent electrode material used in the transparent electrode layer 121, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), zinc gallium oxide (GZO, Gallium Zinc Oxide), or the like can be used.

On the other hand, it is preferable to use a translucent electrode for the second electrode 31. As the translucent electrode, for example, a metal translucent electrode element, a metal semi-transparent electrode layer and a transparent electrode layer can be used, but the reflectance. From the viewpoint of the transmittance, silver is preferred.

Further, as a method of laminating the first electrode 21 and the second electrode 31, a sputtering method, a vacuum deposition method, a CVD (chemical vapor deposition) method, a plasma CVD method, a printing method, or the like can be used.

In the present embodiment, in order to control the emitted luminescent color by the difference in optical path length, by sub-pixel 71R. 71G. 71B changes the thickness of the transparent electrode layer 121 in the first electrode 21 or the second electrode 31 (the first electrode 21 in the example shown in FIGS. 5 and 6), and the sub-pixel 71R. 71G. 71B is introduced into the microcavity structure.

Furthermore, the following applies to the sub-pixel 71R by changing the thickness of the transparent electrode layer 121. 71G. The method of introducing the 71B into the microcavity structure will be described in detail.

As the material of the organic EL layer 43, a known material can be used.

Examples of the material of the hole injection layer, the hole transport layer, or the hole injection layer and the hole transport layer include hydrazine, aza-linked triphenyl, anthracene, anthracene, anthracene, a terphenyl, a benzene, and a styrene. Amine, triphenylamine, porphyrin, triazole, imidazole, A chain or heterocyclic ring such as an oxadiazole, an oxazole, a polyarylalkane, a phenylenediamine, an arylamine, or a derivative thereof, a thiophene compound, a polydecane compound, a vinyl oxazole compound or an aniline compound A monomer, oligomer or polymer of the conjugated system.

Examples of the material of the electron transporting layer, the electron injecting layer, or the electron transporting layer and the electron injecting layer include tris(8-hydroxyquinoline)aluminum complex, An oxadiazole derivative, a triazole derivative, a phenylquinoxaline derivative, a silole derivative, and the like.

As the material of the light-emitting layer, a material having high light-emitting efficiency such as a low molecular weight fluorescent dye or a metal complex can be used. For example, hydrazine, naphthalene, anthracene, phenanthrene, anthracene, fused tetraphenyl, terphenyl, hydrazine, hydrazine, propadiene, phenanthrene, pentyl, pentacene, hydrazine, butadiene, and coumarin , acridine, anthracene and derivatives thereof, tris(8-hydroxyquinoline)aluminum complex, bis(benzoquinoline)oxime complex, tris(diphenylmercaptomethyl)morphine A porphyrin complex, xylylene methylbiphenyl, hydroxyphenyl oxazole, hydroxyphenyl thiazole, and the like.

Further, as the light-emitting layer, a single material may be used, or a mixed material in which another material is used as a host material and other materials are used as a guest material or a dopant may be used.

Examples of the material of the carrier-generating layer include metal oxides such as molybdenum oxide and vanadium pentoxide, or those obtained by co-evaporating them with an aromatic hydrocarbon or a carbazole derivative, or a metal thin film of Au or Ag, IZO or A transparent conductive layer (transparent electrode layer) such as ITO.

<Method of Manufacturing Organic EL Display Device 100>

Next, a method of manufacturing the organic EL display device 100 will be described.

However, the dimensions, materials, shapes, and the like of the respective constituent elements described in the present embodiment are always only one embodiment, and the present invention should not be construed as limiting thereby. The scope.

First, an outline of the flow of the manufacturing steps of the organic EL display device 100 will be described with reference to FIG.

Fig. 7 is a flow chart showing an example of the manufacturing steps of the organic EL display device 100 in steps.

Further, as described above, in the layering procedure described in the present embodiment, the first electrode 21 is an anode, the second electrode 31 is a cathode, and the first electrode 21 is a cathode, and the second electrode 31 is a cathode. In the case of the anode, the material and thickness of the first electrode 21 and the second electrode 31 are reversed.

First, in step S1, as shown in FIG. 5, the TFT 12, the signal line 14, the interlayer insulating film 13, and the contact hole 13a are formed on the display region R1 of the insulating substrate 11 by a known method.

In the case of manufacturing the top emission type organic EL display device 100 as in the present embodiment, a glass substrate or a plastic substrate such as an alkali-free glass substrate having a thickness of 0.7 to 1.1 mm is used as the insulating substrate 11.

In addition, the size of the insulating substrate 11 in the X-axis direction and the Y-axis direction may be appropriately set depending on the application or the like, and is not particularly limited. Further, in the present embodiment, an alkali-free glass substrate having a thickness of 0.7 mm is used.

The interlayer insulating film 13 and the contact hole 13a are formed by applying a photosensitive resin to the insulating substrate 11 on which the TFT 12 and the signal line 14 are formed by a known technique, and patterning by photolithography.

Further, as the interlayer insulating film 13, a known photosensitive resin can be used. The photosensitive resin may, for example, be an acrylic resin or a polyimide resin. As the film thickness of the interlayer insulating film 13, as long as it can be compensated by The step caused by the TFT 12 is not particularly limited. In the present embodiment, for example, the film thickness of the acrylic resin is about 2 μm.

In this step, the signal lines 14 for driving the TFTs 12, such as the gate lines and the source lines, are patterned to be drawn out to the terminal portion region R3. Moreover, in this step, for example, as shown in FIG. 3, the connection portion 60 is patterned in the second electrode connection region R2.

Then, in step S2, for each sub-pixel 71R. 71G. 71B produces the first electrode 21 having a different thickness. In the following, a method of manufacturing the first electrode 21 when the organic EL display device 100 is in the top emission type will be described in detail below.

Then, in step S3, the end portion (pattern end portion) of the first electrode 21 is coated on the interlayer insulating film 13, and as shown in FIG. 4, for each sub-pixel 71R. 71G. 71B to form an opening 15R. 15G. The side cover 15 is produced in the manner of 15B.

Similarly to the interlayer insulating film 13, a known photosensitive resin can be used for the side cover 15. The photosensitive resin may, for example, be an acrylic resin or a polyimide resin.

The side cover 15 is for preventing the step difference caused by the difference in the layer thickness of the first electrode 21 in the adjacent sub-pixels 71, and is prevented from being formed at the end of the first electrode 21, and the first electrode 21 and the second electrode 31 are provided. A short circuit occurs, and the height from the surface of the first electrode 21 in the sub-pixel 71R having the thickest film thickness of the first electrode 21 is set to, for example, about 1 μm.

In the present embodiment, the self-interlayer insulating film 13 is patterned so as to have a height of about 1 μm from the surface of the first electrode 21 in the sub-pixel 71R. The side cover 15 is made of acrylic resin having a height of about 1.2 μm.

Through the above steps, the support substrate 10 on which the first electrode 21 and the side cover 15 are formed is produced.

Then, in step S4, the support substrate 10 obtained through the above-described steps is subjected to decompression baking for dehydration and oxygen plasma treatment as surface cleaning of the first electrode 21, as shown in FIG. The organic EL layer 43 is formed on the entire surface of the display region R1 of the support substrate 10 so as to cover the first electrode 21 and the side cover 15. In addition, the method of producing the organic EL layer 43 will be specifically described below.

Then, in step S5, the second electrode 31 is formed by a known method. Specifically, in order to form the second electrode 31 on the entire surface of the display region R1 and to electrically connect the connection portion 60 of the second electrode connection region R2, for example, the vapor deposition is used. The mask is formed by vapor deposition. Further, as for the fabrication of the second electrode 31, the same method as the organic EL layer 43 can be used.

The film thickness of the second electrode 31 is preferably 10 to 30 nm. When the film thickness of the second electrode 31 is less than 10 nm, the light reflection cannot be sufficiently performed, and the microcavity effect cannot be sufficiently obtained. On the other hand, when the film thickness of the second electrode 31 exceeds 30 nm, the transmittance of light decreases and the brightness decreases. In the present embodiment, Ag having a film thickness of 20 nm is formed as the second electrode 31.

Thereby, the organic EL element 20 including the first electrode 21, the organic EL layer 43, and the second electrode 31 is formed on the support substrate 10.

Then, in step S6, as shown in FIG. 2, the sealing resin layer 41 is used. The support substrate 10 on which the organic EL element 20 is formed is bonded to the sealing substrate 50, and the organic EL element 20 is sealed.

Moreover, the sealing of the organic EL element 20 can be performed, for example, as follows.

First, as shown in FIG. 2, a sealing resin layer 41 is formed in a frame-shaped sealing region L surrounding the display region R1 and the second electrode connection region R2 in the support substrate 10 shown in FIG.

Then, in the space surrounded by the support substrate 10 and the sealing resin layer 41, the filling resin layer 42 containing the desiccant is filled to prevent oxygen or moisture from infiltrating into the organic EL from the outside so as to cover the second electrode 31. A protective film in the component 20.

For the filling resin layer 42, for example, an epoxy resin or the like is used. The film thickness of the filled resin layer 42 is, for example, 1 to 20 μm.

Then, the support substrate 10 and the sealing substrate 50 are bonded together via the sealing resin layer 41.

Thereby, the organic EL element 20 is sealed by the support substrate 10, the sealing substrate 50, the sealing resin layer 41, and the filling resin layer 42.

As the sealing substrate 50, for example, an insulating substrate such as a glass substrate or a plastic substrate having a thickness of 0.4 to 1.1 mm is used. Further, in the present embodiment, an alkali-free glass substrate having a thickness of 0.7 mm is used.

Then, in step S7, as shown in FIG. 2, the connection terminal 103 of the circuit portion 102 is connected to the terminal portion region R3 of the support substrate 10 via, for example, an ACF (Anisotropic Conductive Film) (not shown). Electrical wiring terminal 2. In this manner, the organic EL display device 100 is manufactured.

Furthermore, the size of the sealing substrate 50 in the X-axis direction and the Y-axis direction may also be The organic EL display device 100 can be appropriately adjusted in size, and an insulating substrate having substantially the same size as the insulating substrate 11 in the support substrate 10 can be used, and after sealing the organic EL element 20, the organic EL display device can be used according to the purpose. Divided by the size of 100.

<Flow of Production Step of Organic EL Layer 43>

Next, an outline of the flow of the manufacturing process of the organic EL layer 43 in the step S4 will be described by taking the organic EL display device 100 having the configuration shown in FIG. 5 as an example.

Fig. 8 is a flow chart showing an example of the steps of producing the organic EL layer 43 in steps.

In the case where the second electrode 31 is a cathode and the second electrode 31 is an anode, the first electrode 21 is a cathode and the second electrode 31 is an anode. The layering order of the organic EL layer 43 is reversed.

In the step S4 shown in FIG. 7, the support substrate 10 subjected to the reduced-pressure baking for dehydration and the oxygen plasma treatment as the surface cleaning of the first electrode 21 is as shown in FIG. In the first electrode 21 and the side cover 15, the hole injection layer 22 is patterned by vapor deposition on the entire surface of the display region R1 of the support substrate 10 (step S11).

For the above pattern formation, for example, a vacuum evaporation method is used. In the vacuum vapor deposition method, the vapor deposition surface of the support substrate 10 in which the mask (open mask) having the entire surface opening of the display region R1 is fixed is opposed to the vapor deposition source, and the vapor deposition from the vapor deposition source is performed. The particles (film forming material) are vapor-deposited on the vapor-deposited surface through the opening of the mask. Thereby, the vapor deposition particles scattered from the vapor deposition source are uniformly vapor-deposited on the entire surface of the display region R1 by opening the opening of the mask.

Further, in the vapor deposition, for example, the open mask of the entire surface of the display region R1 may be aligned and adjusted with respect to the support substrate 10, and then the support substrate 10 and the open mask may be adhered to each other. The vapor deposition particles scattered from the vapor deposition source are vapor-deposited in the display region R1 through the opening of the open mask, and the open mask can be adhered and fixed to the support substrate 10 and the open mask. In the state of scanning, the vapor deposition source is scanned and vapor deposition is performed as in vapor deposition.

Here, the vapor deposition of the entire surface of the display region R1 means that vapor deposition is continuously performed between sub-pixels having different adjacent colors.

For the above vapor deposition, the same vacuum evaporation apparatus as before can be used. Therefore, the details of the vacuum vapor deposition apparatus and the vapor deposition method will not be described or illustrated here.

In the case where the vapor deposition film is formed by a vacuum vapor deposition apparatus as described above, it is preferable that the vacuum vapor deposition apparatus is set to a vacuum limit rate of 1.0 × 10 ^-4 Pa or more by a vacuum pump. In other words, it is desirable that the pressure in the vacuum chamber is set to 1.0 × 10 ^-4 Pa or less.

In order to achieve a degree of vacuum higher than 1.0 × 10 ^-3 Pa, the average free path of the vapor-deposited particles must obtain a sufficient value. On the other hand, when the degree of vacuum is less than 1.0 × 10 ^-3 Pa, the average free diameter is shortened, and the vapor deposition particles are scattered, and the arrival efficiency of the support substrate 10 as a film formation substrate is lowered, or the vapor deposition particles are attached thereto. Unwanted area. Therefore, it is desirable that the vacuum chamber be set to the above vacuum limit rate.

Then, in step S12, an open mask is used to cover the hole injection layer 22 in the same pattern as the hole injection layer 22, and the hole is injected. In the same manner as the entry layer 22, the hole transport layer 23 is formed (evaporated) over the entire surface pattern of the display region R1.

Then, an open mask is used to cover the hole transport layer 23 in the same pattern as the hole injection layer 22 and the hole transport layer 23, and is the same as the hole injection layer 22 and the hole transport layer 23. In the entire surface of the display region R1, the first light-emitting layer 24 (step S13), the electron transport layer 25 (step S14), and the carrier-generating layer 26 are sequentially formed (vapor-deposited) in each step. Step S15), hole transport layer 27 (step S16), second light-emitting layer 28 (step S17), electron transport layer 29 (step S18), and electron injection layer 30 (step S19).

The film thickness of the organic EL layers 43 is set to be, for example, the same as before.

Further, the hole injection layer 22 and the hole transport layer 23 may be formed as separate layers as described above, or may be integrated as described above. The film thickness of each is, for example, 1 to 100 nm. Further, the total film thickness of the hole injection layer 22 and the hole transport layer 23 is, for example, 2 to 200 nm.

Further, the electron transport layer 29 and the electron injection layer 30 may be formed as separate layers as described above, or may be integrated as described above.

The film thickness of each of the electron transport layer 25, the electron transport layer 29, and the electron injection layer 30 is, for example, 1 to 100 nm. Further, the total film thickness of the electron transport layer 29 and the electron injection layer 30 is, for example, 20 to 200 nm.

The film thickness of each of the first light-emitting layer 24 and the second light-emitting layer 28 is, for example, 10 to 100 nm.

Further, the film thickness of the carrier generating layer 26 is, for example, 1 to 30 nm.

In the present embodiment, copper phthalocyanine having a film thickness of 2 nm is used as a hole injection. Into layer 22. Further, NPB (4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl) having a film thickness of 30 nm was used as the hole transport layer 23.

Also, the film thickness of each film is 40 nm. The oxadiazole derivative serves as the electron transport layer 25 and the electron transport layer 29. Further, lithium fluoride having a film thickness of 1 nm was used as the electron injection layer 30.

Further, a film having a thickness of 30 nm was formed by co-depositing CBP (4,4'-N,N'-dicarbazole-biphenyl) as a host material by using a ruthenium complex as a guest material. The first light-emitting layer 24 and the second light-emitting layer 28 are used. Further, a film obtained by co-evaporation of molybdenum oxide and NPB was formed to have a film thickness of 10 nm, and was used as a carrier generating layer 26.

In the case where the unit including the third light-emitting layer is laminated, for example, between step S18 and step S19, the carrier generation layer is formed (vapor-deposited) in the same manner as indicated by a two-dot chain line. Step S21), a hole transport layer (step S22), a third light-emitting layer (step S23), and an electron transport layer (step S24).

The material and film thickness of the carrier generation layer, the hole transport layer, the third light-emitting layer, and the electron transport layer in this case may be set in the same manner as the unit including the second light-emitting layer 28, for example.

In the organic EL display device 100 as described above, when the TFT 12 is turned on (ON) by the signal input from the signal line 14, a hole is injected from the first electrode 21 to the organic EL layer 43. On the other hand, when electrons are injected from the second electrode 31 to the organic EL layer 43, the holes and electrons are recombined in the respective light-emitting layers, and when the obtained holes and electrons are combined to deactivate the energy, they are emitted as light.

In the present embodiment, the first light-emitting layer 24 and the second light-emitting layer 28 are different in light-emitting color, and the light-emitting layer is obtained from the first light-emitting layer by the organic EL element 20. The mixture of the light emitted by the 24 and the second luminescent layer 28 is subjected to the microcavity effect.

<Method of Manufacturing First Electrode 21>

Next, a method of fabricating the first electrode 21 in the top emission type organic EL display device 100 (that is, a method of fabricating an electrode having a different optical path length for each sub-pixel 71) will be described.

1(a) to 1(i) are cross-sectional views showing an example of a method of fabricating the first electrode 21 in the top emission type organic EL display device 100 shown in the step S2.

First, on the support substrate 10 on which the interlayer insulating film 13 and the contact hole 13a shown in FIG. 5 are formed, as shown in FIG. 1(a), an amorphous film as a transparent electrode layer is sequentially formed by sputtering or the like. An ITO (hereinafter referred to as "a-ITO") layer 110, a reflective electrode layer 111 containing a reflective electrode material such as a metal material, and an a-ITO layer 112 (first transparent electrode layer) as a transparent electrode layer.

Then, on the above a-ITO layer 112, for each sub-pixel 71R. 71G. 71B, a resist pattern 201R is formed by photolithography. 201G. 201B. Then, each resist pattern 201R. 201G. As a mask, as shown in FIG. 1(b), the a-ITO layer 110, the reflective electrode layer 111, and the a-ITO layer 112 are etched, and then the resist patterns are peeled off and cleaned by a resist stripping solution. 201R. 201G. 201B.

Thereby, as shown in FIG. 1(b), for each sub-pixel 71R of each color. 71G. 71B, the a-ITO layer 110, the reflective electrode layer 111, and the a-ITO layer 112 are patterned to be separated. That is, for each sub-pixel 71R of each color. 71G. 71B forms a patterned a-ITO layer 110, a reflective electrode layer 111 and a-ITO layer 112.

As the reflective electrode material used in the above-mentioned reflective electrode layer 111, a reflective electrode material which does not undergo an electrolytic corrosion reaction with a-ITO is preferably used, and for example, any one selected from the group consisting of Ag, an Ag alloy, and an Al alloy can be used.

Further, the thickness of the reflective electrode layer 111 is set to, for example, 50 to 200 nm. In the present embodiment, a silver alloy having a film forming electrode thickness of 100 nm is used as the reflective electrode layer 111.

Further, the film thickness of the a-ITO layer 110 is set to, for example, 200 nm or less (0 to 200 nm). The film thickness of the a-ITO layer 112 is set to, for example, 5 to 50 nm. In the present embodiment, the a-ITO layer 110 having a film-forming electrode thickness of 100 nm and the a-ITO layer 112 having an electrode thickness of 20 nm are used.

Furthermore, for the above etching, use of, for example, phosphoric acid is used. Nitric acid. An etching solution such as a mixture of acetic acid or ferric chloride is used as a wet etching of an etching solution. Further, as the resist stripper, for example, monoisopropanolamine or the like is used.

Then, by heat-treating (annealing) the support substrate 10, as shown in FIG. 1(c), the a-ITO layer 110.112 is crystallized.

In addition, the treatment temperature and the treatment time in the heat treatment are appropriately set so that the a-ITO layer 110.112 can be crystallized, and are not particularly limited.

In the present embodiment, heat treatment was performed at 200 ° C for 1 hour. Thereby, a-ITO is converted into crystalline ITO (hereinafter referred to as "p-ITO"). As a result, as shown in FIG. 1(c), each sub-pixel 71R. 71G. The a-ITO layer 110.112 in 71B is converted to the p-ITO layer 113.114.

Furthermore, in the conversion of a-ITO to p-ITO, there is no reduction in film thickness. And the film thickness at the time of film formation of a-ITO is maintained.

Then, as shown in FIG. 1(d), the p-ITO layer 113, the reflective electrode layer 111, and the p-ITO layer 114 (first transparent electrode layer) are covered on the support substrate 10 by, for example, The film was sputter-deposited as the a-ITO layer 115 (second transparent electrode layer) of the transparent electrode layer.

The film thickness of the a-ITO layer 115 is set to, for example, 40 to 120 nm. In the present embodiment, the a-ITO layer 115 having a film-forming electrode thickness of 80 nm is formed.

Then, as shown in FIG. 1(d), on the a-ITO layer 115 in the sub-pixel 71R, the patterned p-ITO layer 113 and the reflective electrode layer 111 are covered in plan view by photolithography. A resist pattern 202R is formed in the same manner as the p-ITO layer 114.

At this time, the resist pattern 202R is formed to be wider than the pattern of the p-ITO layer 113 in the sub-pixel 71R so as to cover the pattern end portion of the p-ITO layer 113 under the reflective electrode layer 111 in plan view.

In other words, the resist pattern 202R is overlapped with the reflective electrode layer 111 and the p-ITO layer 113 in plan view, and is formed larger than the reflective electrode layer 111 and the p-ITO layer 113 in plan view.

Further, the amount of protrusion of the resist pattern 202R from the pattern end portion of the p-ITO layer 113 in plan view was set to 2 μm, respectively.

Then, using the etching resist 202R as a mask, an etching liquid is used, as shown in FIG. 1(e), after the wet etching is performed on the a-ITO layer 115 not covered by the resist pattern 202R, the resist is used. The cleaning resist pattern 202R is peeled off by the stripping liquid.

As the etching liquid, for example, oxalic acid is used. Thereby selectively The a-ITO layer 115 is etched. Further, as the resist stripping liquid, the same resist stripping liquid as that used in the etching shown in Fig. 1(b) can be used.

At this time, the p-ITO layer 113.114 and the reflective electrode layer 111 are not etched by the above etching liquid (oxalic acid) or the etching rate is remarkably slow. Therefore, the p-ITO layer 113.114 and the reflective electrode layer 111 remain without being removed by the above etching.

Thereby, as shown in FIG. 1(e), only the a-ITO layer 115 other than the a-ITO layer 115 of the sub-pixel 71R masked by the resist pattern 202R is removed.

Then, by heat-treating the support substrate 10, the a-ITO layer 115 is crystallized as shown in Fig. 1(f).

In addition, the treatment temperature and the treatment time in the heat treatment are appropriately set so that the a-ITO layer 115 can be crystallized, and are not particularly limited.

In the present embodiment, heat treatment was performed at 200 ° C for 1 hour in the same manner as the step shown in Fig. 1 (c). Thereby, a-ITO is converted into p-ITO. As a result, as shown in FIG. 1(f), the a-ITO layer 115 in the sub-pixel 71R is converted into the p-ITO layer 116.

Then, as shown in FIG. 1(g), on the support substrate 10, to cover each sub-pixel 71R. 71G. In the manner of each of the transparent electrode layer and the reflective electrode layer 111 in the 71B, the a-ITO layer 117 which is a transparent electrode layer is formed by, for example, sputtering.

The film thickness of the a-ITO layer 117 is set to, for example, 20 to 60 nm. In the present embodiment, as described below, since the a-ITO layer 117 in the sub-pixel 71R is removed by etching in the step shown in FIG. 1(h), the film thickness of the a-ITO layer 117 is used. The a-ITO layer 117 is formed in a manner smaller than the film thickness of the p-ITO layer 116 (the optical path length 73R in the sub-pixel 71R). Therefore, the film thickness of the a-ITO layer 117 is set to be smaller than 40 nm of the film thickness of the p-ITO layer 116.

Then, as shown in FIG. 1(g), on the a-ITO layer 117 in the sub-pixel 71G, the patterned p-ITO layer 113 and the reflective electrode layer 111 are covered in plan view by photolithography. A resist pattern 202G is formed in the same manner as the a-ITO layer 117.

At this time, the resist pattern 202G is formed to be wider than the pattern of the p-ITO layer 113 in the sub-pixel 71G so as to cover the pattern end portion of the p-ITO layer 113 under the reflective electrode layer 111 in plan view.

In other words, the resist pattern 202G is also overlapped with the reflective electrode layer 111 and the p-ITO layer 113 in plan view, and is formed to be larger than the reflective electrode layer 111 and the p-ITO layer 113 in plan view.

In addition, the amount of protrusion of the resist pattern 202G from the pattern end portion of the p-ITO layer 113 in plan view is set to 2 μm in the same manner as the resist pattern 202R.

Then, using the etching resist 202G as a mask, an etching liquid is used, as shown in FIG. 1(h), after the wet etching of the a-ITO layer 117 not masked by the resist pattern 202G, the resist is used. The cleaning resist pattern 202G is peeled off by the stripping liquid.

Further, as the etching liquid and the peeling liquid, an etching liquid and a peeling liquid which are the same as the etching liquid and the peeling liquid used for the etching shown in Fig. 1(e) can be used. Thereby, the a-ITO layer 117 can be selectively etched.

At this time, the p-ITO layer 113.114.116 and the reflective electrode layer 111 are not etched by the above etching liquid (oxalic acid) or the etching rate is remarkably slow. Therefore, the p-ITO layer 113.114.116 and the reflective electrode layer 111 remain without being removed by the above etching.

Thereby, as shown in FIG. 1(h), only the a-ITO layer 117 other than the a-ITO layer 117 of the sub-pixel 71G masked by the resist pattern 202G is removed.

Then, by heat-treating the support substrate 10, the a-ITO layer 117 is crystallized as shown in Fig. 1(i).

In addition, the treatment temperature and the treatment time in the heat treatment are appropriately set so that the a-ITO layer 117 can be crystallized, and are not particularly limited.

Here, heat treatment was also performed at 200 ° C for 1 hour in the same manner as the step shown in Fig. 1 (c). Thereby, as shown in FIG. 1(i), the a-ITO layer 117 in the sub-pixel 71G is converted into the p-ITO layer 118.

Thereby, the p-ITO layer 113 in which the reflective electrode layer 111 is formed of the transparent electrode layer as the lower layer of the reflective electrode layer 111 and the transparent electrode layer as the upper layer of the reflective electrode layer 111 is formed in the sub-pixel 71R. The first electrode 21 is surrounded.

Further, the p-ITO layer 114.116 which is a transparent electrode layer above the reflective electrode layer 111 functions as a transparent electrode layer 121 which forms a microcavity.

Therefore, in the sub-pixel 71R, the film thickness of each p-ITO layer 113.116 is set so that the total film thickness of the p-ITO layer 113.116 becomes the optical path length 73R of the sub-pixel 71R.

Further, the reflective electrode layer 111 is formed on the sub-pixel 71G by the p-ITO layer 113 as a transparent electrode layer under the reflective electrode layer 111 and as a reflective electrode layer. The p-ITO layer 114 and the film thickness of the transparent electrode layer of the upper layer of 111 are smaller than the first electrode 21 surrounded by the p-ITO layer 118 of the p-ITO layer 116.

In the sub-pixel 71G, the p-ITO layer 114.118 which is a transparent electrode layer above the reflective electrode layer 111 functions as a transparent electrode layer 121 which forms a microcavity.

Therefore, in the sub-pixel 71G, the film thickness of each p-ITO layer 114.118 is set so that the total film thickness of the p-ITO layer 114.118 becomes the optical path length 73G of the sub-pixel 71G.

Further, the reflective electrode layer 111 is formed on the sub-pixel 71B by the p-ITO layer 113 which is a transparent electrode layer under the reflective electrode layer 111 and the p-ITO layer 114 which is a transparent electrode layer above the reflective electrode layer 111. The first electrode 21.

In the sub-pixel 71B, the p-ITO layer 114 which is a transparent electrode layer above the reflective electrode layer 111 functions as a transparent electrode layer 121 which forms a microcavity.

Therefore, in the sub-pixel 71B, the film thickness of the p-ITO layer 114 is set such that the film thickness of the p-ITO layer 114 becomes the optical path length 73G of the sub-pixel 71G.

However, the embodiment is not limited thereto, and may be provided in each sub-pixel 71R. 71G. Further, 71B is formed by laminating a p-ITO layer (not shown) or a transparent electrode layer different from the ITO layer as in the case of an IZO layer.

As described above, according to the present embodiment, the patterning step of patterning the a-ITO layer by etching the a-ITO layer by photolithography is repeated by repeating the film forming step of the a-ITO layer as described above, and The crystallization step of converting the a-ITO layer obtained by patterning into a p-ITO layer allows any number of p-ITO layers to be laminated on any sub-pixel.

By the above processing, as shown in FIG. 1(i), each sub-pixel 71R of different colors can be used. 71G. 71B, the film thickness of the transparent electrode layer 121 is changed.

In the present embodiment, after the first electrode 21 is formed in this manner, the side cover 15 is produced as shown in step S3.

Fig. 9(a) is a cross-sectional view schematically showing a schematic configuration of the first electrode 21 when the side cover 15 is formed on the first electrode 21 in step S3, and Fig. 9(b) is schematically shown in the step. A plan view showing a schematic configuration of the first electrode 21 when the side cover 15 is formed on the first electrode 21 in S3.

In the present embodiment, as shown in FIG. 1(d), the resist pattern 202R is formed to be in the sub-pixel 71R so as to cover the end portion of the pattern of the p-ITO layer 113 under the reflective electrode layer 111 in plan view. The pattern of the p-ITO layer 113 is wide.

Therefore, in the present embodiment, the a-ITO layer 115 around the p-ITO layer 113 covered by the resist pattern 202R is not etched away by etching in the step shown in FIG. 1(e), and Figure 9 (a). (b) remains as shown covering the patterned reflective electrode layer 111 and the p-ITO layer 113.

Further, in the present embodiment, as shown in FIG. 1(g), the resist pattern 202G is formed to be smaller than the sub-pixel 71G so as to cover the end portion of the pattern of the p-ITO layer 113 under the reflective electrode layer 111 in plan view. The pattern of each of the p-ITO layers 113 is wide.

Therefore, in the present embodiment, the a-ITO layer 117 around the p-ITO layer 113 covered by the resist pattern 202G is not etched away by etching in the step shown in FIG. 1(h). Figure 9 (a). (b) remains as shown covering the patterned reflective electrode layer 111 and the p-ITO layer 113.

Therefore, in the present embodiment, the steps shown in Fig. 1 (e) or Fig. 1 (h) After, in each sub-pixel 71R. In the 71G, not only the upper layer of the reflective electrode layer 111 is not exposed, but also the side surface thereof is not exposed.

Furthermore, in the steps shown in FIGS. 1(a) to (i), the sub-pixel 71R. A plurality of p-ITO layers are laminated on the reflective electrode layer 111 in the 71G, and it is needless to say that a plurality of p-ITO layers can be laminated on the reflective electrode layer 111 in any sub-pixel by changing the sub-pixels forming the resist pattern. .

Further, when the number of layers of the p-ITO layer laminated on the reflective electrode layer 111 is increased, the sub-pixel 71B is applied in the same manner as the step shown in Fig. 1 (d) or Fig. 1 (g). Forming a p-ITO layer, thereby not only sub-pixel 71R. In the 71G, in the sub-pixel 71B, the p-ITO layer 113 having the reflective electrode layer 111 from the transparent electrode layer as the lower layer of the reflective electrode layer 111 and the transparent electrode layer as the upper layer of the reflective electrode layer 111 can also be obtained. The first electrode 21 is surrounded by a layer 114.116.

<effect>

As described above, in the present embodiment, the a-ITO layer 112 (first transparent electrode layer) is formed on the upper layer of the reflective electrode layer 111 (for example, on the reflective electrode layer 111) as a transparent transparent electrode material. After the electrode layer is collectively etched, the a-ITO layer 112 is converted into a transparent electrode layer (ie, p-ITO layer 114) containing a polycrystalline transparent electrode material, and a transparent electrode formed thereon is formed thereon. The layer, that is, the a-ITO layer 115.117 (the second transparent electrode layer) has a difference in etching resistance, and a transparent electrode layer is laminated, whereby each sub-pixel 71R. 71G. The total film thickness of the above transparent electrode layers was changed between 71B.

As described above, according to the present embodiment, the a-ITO layer 112 is formed on the upper surface of the reflective electrode layer 111 as described above, and the reflective electrode layer 111 is collectively applied. The a-ITO layer 112 is etched without increasing the number of photolithography, and the p-ITO layer 114 may be laminated on the reflective electrode layer 111.

Further, according to the present embodiment, before the a-ITO layer 115.117 which is a transparent electrode layer (second transparent electrode layer) having a lower film forming etching resistance than the p-ITO layer 114 (first transparent electrode layer), Subpixel 71R. 71G. In the 71B, the a-ITO layer 112 is laminated in advance, whereby the second transparent electrode layer can be laminated on any of the sub-pixels 71.

Therefore, even if it is not as in the case of Patent Document 3, a crystalline ITO layer is additionally formed and patterned in order to deposit a transparent electrode layer, and a transparent electrode layer having the same film thickness is formed in two sub-pixels every time the photolithography is performed. The pattern can also be used for 2 times of photolithography, for each sub-pixel 71R with different display colors. 71G. 71B, the first electrode 21 having a total thickness of the transparent electrode layers on the reflective electrode layer 111 (that is, the film thickness of the transparent electrode layer 121) is different.

That is, according to this embodiment, as shown in Fig. 1(d). (g) is shown as being for each sub-pixel 71R. 71G. 71B, the number of photolithography required to change the film thickness (the number of layers) of the transparent electrode layer can be used for each sub-pixel 71R by secondary photolithography. 71G. 71B arbitrarily changes the film thickness of the transparent electrode layer 121 on the reflective electrode layer 111. Further, according to the present embodiment, even if the etching of the reflective electrode layer 111 is included, the number of photolithography can be suppressed to three times.

Therefore, according to the present embodiment, even if the number of photolithography is reduced as described above, the film thickness of the second transparent electrode layer in any of the sub-pixels 71 can be made independent of the second transparent electrode layer in the other sub-pixels 71. The film thickness is set.

Accordingly, in the present embodiment, as described above, the use of non-crystalline The difference in etching selectivity between the transparent electrode layer of the transparent electrode material and the transparent electrode layer containing the polycrystalline transparent electrode material (for example, the difference in etching selectivity between the a-ITO layer and the p-ITO layer as described above) Stacking of transparent electrode layers in a single layer.

According to this embodiment, the etching resistance to the etching liquid can be improved by converting the amorphous transparent electrode material into a polycrystalline transparent electrode material.

Therefore, according to this embodiment, each sub-pixel 71R can be arbitrarily and easily adjusted. 71G. The light path length in 71B is 73R. 73G. 73B, and is not restricted by the optical path length as in Patent Document 3.

Therefore, according to the present embodiment, the film thickness of the first electrode 21, in other words, the optical path length of the organic EL element 20, can be arbitrarily changed for each sub-pixel 71 having a different display color than the previous photolithography. .

As a result, a lower cost reduction and a smaller footprint can be achieved.

Further, as described above, in the prior method, since the peeling and baking steps of the resist are increased, the surface of the reflective electrode layer is rough or oxidized to lower the reflection efficiency, or the surface of the reflective electrode is rough. Leakage between electrodes leads to defects in pixel defects.

However, according to the present embodiment, since the number of times of exposure, development, and resist stripping treatment can be reduced, there is no fear as described above, and the quality of the support substrate 10 as the substrate for organic EL can be improved. Also, the processing beat can be shortened.

Further, when the terminal portions of the reflective electrode layer 111 or the signal line 14 are formed of Ag, if Ag is exposed (ie, exposed), the support substrate 10 is performed, for example, to improve the wettability of the resist. Ultraviolet radiation At this time, the exposed Ag is oxidized to become silver oxide.

Therefore, when the terminal portions of the reflective electrode layer 111 or the signal line 14 are formed of Ag, it is not preferable that when ultraviolet irradiation is performed, Ag is exposed when ultraviolet rays are irradiated.

Further, when the terminal portions of the reflective electrode layer 111 or the signal line 14 are formed of Al, there is a possibility that the solvent resistance of Al is low and the solvent penetrates through the IZO layer.

Therefore, in either case, it is desirable that the terminal portions of the reflective electrode layer 111 and the signal line 14 are covered by the p-ITO layer as described above.

According to the present embodiment, the p-ITO layer formed on the lower layer or the upper layer of the reflective electrode layer 111 is formed by forming a film on the terminal portion of the signal line 14 such as the source line by the film formation step of the a-ITO layer. The ITO layer can be used as a protective film covering the terminal portion of the signal line 14 such as the source line.

Further, the other transparent electrode layers laminated on the reflective electrode layer 111 may be used as a terminal portion covering the signal line 14 by laminating the transparent electrode layers on the terminal portions of the signal lines 14 such as the source lines. Protective film.

Further, according to the present embodiment, the terminal portions of the reflective electrode layer 111 and the signal line 14 are covered by the p-ITO layer 113.114 at an early stage in the manufacturing process, for example, the reflective electrode layers 111 and the signal lines 14 can be reduced. The number of times or the area in which the terminal portion is immersed in the developer can protect the reflective electrode layer 111 from the above-mentioned factors that may deteriorate the quality of the reflective electrode layer 111.

Moreover, the resist pattern 202R is as described above. 202G is formed in a plan view compared to each sub-pixel 71R. The pattern of the p-ITO layer 113 in the 71G is wide and is utilized as described above. The p-ITO layer is sandwiched or the reflective electrode layer 111 is sealed with a p-ITO layer, whereby the same effect can be obtained.

Further, p-ITO can be obtained not only by heat-treating a-ITO, but also by directly forming a p-ITO by a film forming apparatus. However, when p-ITO is directly formed, the flatness of the film is liable to be lowered due to the growth of crystal grains in the film formation, or pinholes between crystals are likely to occur. When the flatness of the film is lowered, the organic EL element 20 is easily damaged by the short circuit between the first electrode 21 and the second electrode 31. Further, when a pinhole is formed, an etching solution, a developing solution, or the like penetrates from the pinhole, and the film of the lower layer is damaged. Therefore, the p-ITO layer is desirably patterned into a p-ITO layer after film formation of the a-ITO layer.

Further, as shown in FIGS. 1(b) to 1(j), the first electrode 21 is formed in a tapered shape by using an etching liquid suitable for the electrode layer material. By forming the first electrode 21 into a tapered shape, film peeling or film breakage of each layer in the first electrode 21 is less likely to occur.

In Patent Document 3, after patterning the reflective electrode layer, crystalline ITO is formed on the first and third sub-pixels and patterned. However, the solubility of the crystalline ITO with respect to the etching liquid used for etching the reflective electrode layer is high.

Therefore, if a crystalline ITO layer is directly formed on the reflective electrode layer and patterned by photolithography, the reflective electrode layer is not tapered.

On the other hand, if the reflective electrode layer and the crystalline ITO layer are respectively patterned in order to avoid the above problem, the number of photolithography increases.

However, according to the present embodiment, since the a-ITO layer 110.112 is formed as described above and patterned together with the reflective electrode layer 111, then, a- The ITO layer 110.112 is converted to the p-ITO layer 113.114, so that the problem as described above is not caused.

<Changes in photomicrography>

Further, in the present embodiment, a case has been described as an example in which the film thickness of the a-ITO layer 117 is made smaller than the film thickness of the p-ITO layer 116 (i.e., sub-pixels) as shown in Fig. 1(g). The optical path length of the 71R is 73R), and the a-ITO layer 117 in the sub-pixel 71R is removed by etching in the step shown in FIG. 1(h).

However, the embodiment is not limited to this. In the step shown in Figure 1 (g) for the sub-pixel 71R. When both of 71G form a resist pattern, the a-ITO layer is not necessarily required when the a-ITO layer 117 in the sub-pixel 71R is not removed by etching in the step shown in FIG. 1(h). The film thickness of 117 is set to be smaller than the film thickness of the p-ITO layer 116.

In this case, in the sub-pixel 71R. Each of 71G forms a p-ITO layer 118 having the same film thickness which is obtained by crystallizing the a-ITO layer 117.

However, in the present embodiment, only the resist pattern 202R is formed on the sub-pixel 71R in the step shown in FIG. 1(d), whereby a- other than the sub-pixel 71R is shown in FIG. 1(e). The ITO layer 115 is removed, and only the a-ITO layer 115 is deposited on the sub-pixel 71R.

Therefore, according to the present embodiment, the film thickness of the a-ITO layer 112 is set so as to obtain the desired optical path length 73B, and the film thickness of the a-ITO layer 117 is set to be subtracted from the desired optical path length 73G. The film thickness of the film thickness of the a-ITO layer 112 (in other words, the film thickness of the p-ITO layer 114) is set such that the film thickness of the a-ITO layer 115 is subtracted from the desired optical path length 73R by a-ITO. The film thickness of the layer 112 and the film thickness of the a-ITO layer 117 can be arbitrarily and easily set. change More sub-pixels 71R. 71G. 71B's light path length is 73R. 73G. 73B.

Further, in the present embodiment, as an example, the electrode of the a-ITO layer 112 (p-ITO layer 114) is set to have an electrode thickness of 20 nm, and the electrode of the a-ITO layer 115 (p-ITO layer 116) is used. The thickness is 80 nm, and the case where the electrode thickness of the a-ITO layer 117 (p-ITO layer 118) is 40 nm has been described as an example. However, the above specific example is always an example, and the embodiment is not limited thereto. .

For example, the electrode thickness of the a-ITO layer 112 (p-ITO layer 114) can be further increased according to the design of the film thickness of the organic EL layer 43 or the like.

<Modification of Sealing Method of Organic EL Element 20>

In the present embodiment, as described above, the case where the support substrate 10 and the sealing substrate are formed by forming the filling resin layer 42 containing the desiccant on the organic EL element 20 has been described as an example. The bonding of 50 and the sealing of the organic EL element 20.

However, the embodiment is not limited to this. Instead of the sealing resin filled in the space surrounded by the support substrate 10, the sealing substrate 50, and the sealing resin layer 41, a hollow structure in which an inert gas is sealed in the space may be used. Further, in addition to this, a structure in which a desiccant is applied or attached to a hollow structure may be provided. However, when light is emitted from the side of the self-sealing substrate 50, it is necessary to shield the light from the desiccant.

In the present embodiment, a configuration in which the organic EL element 20, the sealing resin layer 41, the filling resin layer 42, and the sealing substrate 50 are sequentially provided on the support substrate 10 has been described as an example. However, the embodiment is not limited to this.

For example, in order to further improve the sealing performance of the organic EL element 20, An inorganic film (not shown) or an organic layer is laminated on the organic EL element 20. Inorganic mixed laminated film, etc.

Furthermore, if only by inorganic film or organic. In the inorganic mixed laminated film or the like and the sealing performance of the organic EL element 20 is sufficient, the sealing resin layer 41, the sealing substrate 50, and the filling resin layer 42 may be omitted.

In the present embodiment, the case where the support substrate 10 and the sealing substrate 50 are bonded together via the sealing resin layer 41 formed in a frame shape, and the organic EL element 20 is sealed is described as an example.

However, the sealing method of the organic EL element 20 is not limited thereto. For example, powder glass (powder glass) may be formed in a frame shape instead of the sealing resin, and the organic EL element 20 may be sealed.

<Example of change in pixel configuration>

Moreover, in the present embodiment, one pixel 70 includes three sub-pixels 71R of R, G, and B. 71G. The case of 71B is explained as an example. However, the embodiment is not limited to this. The one pixel 70 may include sub-pixels 71 of three colors other than R, G, and B such as cyan (C), magenta (M), and yellow (Y).

Further, for example, sub-pixels 71 of four or more colors such as sub-pixels 71 of four colors such as Y may be added to R, G, and B.

According to the present embodiment, as described above, the difference in etching selectivity between the lower p-ITO (first transparent electrode layer) and the upper a-ITO layer (second transparent electrode layer) is performed, for example, in each color single layer. The deposition of the transparent electrode layers allows a transparent electrode layer of any thickness to be formed on any of the sub-pixels 71.

Furthermore, in the present embodiment, the transparent electrode on the reflective electrode layer 111 The number of layers in the layer is not particularly limited and can be arbitrarily set.

In either case, according to the present embodiment, if the number of transparent electrode layers is the same as that of the laminated layer, the number of available times is less than that of the previous photolithography, and the reflective electrode layer is changed between sub-pixels having different display colors. The number of layers of the transparent electrode layer or the total film thickness.

Further, in the present embodiment, as described above, the active matrix type organic EL display device 100 in which the TFTs 12 are formed in each of the sub-pixels 71 is exemplified. However, the present embodiment is not limited thereto, and the present invention can be applied to the manufacture of a passive matrix type organic EL display device in which a TFT is not formed, as long as it is not affected by the driving method of the organic EL element 20.

<Variation of Manufacturing Method of Organic EL Layer 43>

Further, in the present embodiment, a case where the organic EL layer 43 is formed by a vacuum deposition method has been described as an example. However, it goes without saying that the manufacturing method of the organic EL layer 43 is not limited thereto, and may be appropriately selected. A film forming method of a conventionally known organic film such as an inkjet method or a laser transfer method is employed.

<Variation of display device>

In the display device manufactured in the present embodiment, a display device using an organic EL element for a light-emitting element has been described as an example. However, the present embodiment is not limited to this, and can be widely applied to a display device using a light-emitting element which can be configured as a minute resonator such as an inorganic EL element.

[Embodiment 2]

The present embodiment will be described mainly based on Figs. 10(a) to (h) as follows.

In the present embodiment, the differences from the first embodiment will be mainly described, and the same components as those having the same functions as those in the first embodiment will be denoted by the same reference numerals and will not be described.

In the organic EL display device 100 of the present embodiment, the laminated structure of the first electrode 21 and the method of fabricating the first electrode 21 shown in the step S2 are different from those of the first embodiment, and the same as the first embodiment. Therefore, in the present embodiment, another manufacturing method and laminated structure of the first electrode 21 shown in step S2 will be described.

<Method of Manufacturing First Electrode 21>

Figs. 10(a) to 10(h) are steps showing steps from the production of the first electrode 21 in the top emission type organic EL display device 100 shown in the step S2 to the production of the side mask shown in the step S3. A cross-sectional view of an example.

In the present embodiment, the steps shown in Figs. 10(a) to (c) are the same as those shown in Figs. 1(a) to 1(c). Therefore, the description of the steps shown in Figs. 10(a) to (c) will be omitted.

In the present embodiment, after the step shown in FIG. 10(c), as shown in FIG. 10(d), the p-ITO layer 113, the reflective electrode layer 111, and the p- are covered on the support substrate 10. In the ITO layer 114 (first transparent electrode layer), for example, an IZO layer 131 (second transparent electrode layer) as a transparent electrode layer is formed by sputtering.

The film thickness of the IZO layer 131 is set to, for example, 20 to 60 nm. In the present embodiment, an IZO layer 131 having a film thickness of 40 nm is formed.

Then, as shown in FIG. 10(d), on the IZO layer 131 in the sub-pixel 71R, the p-ITO layer 113 and the reflective electrode are covered in plan view by photolithography. The resist pattern 202R is formed in the form of the layer 111 and the p-ITO layer 114.

Then, the resist pattern 202R is used as a mask, and the IZO layer 131 not covered by the resist pattern 202R is wet-etched using an etching solution, and then the cleaning resist pattern 202R is peeled off by the resist stripping solution.

Further, as the etching liquid and the peeling liquid, the etching liquid and the peeling liquid which are the same as the etching liquid and the peeling liquid used in the etching step shown in Fig. 1(e) can be used. For the above etching liquid, for example, oxalic acid is used. Thereby, the IZO layer 131 can be selectively etched.

At this time, the p-ITO layer 113.114 and the reflective electrode layer 111 are not etched by the above etching liquid (oxalic acid) or the etching rate is remarkably slow. Therefore, the p-ITO layer 113.114 and the reflective electrode layer 111 remain without being removed by the above etching.

Thereby, as shown in FIG. 10(e), only the IZO layer 131 other than the IZO layer 131 of the sub-pixel 71R masked by the resist pattern 202R is removed.

Then, as shown in FIG. 10(f), on the support substrate 10, to cover each sub-pixel 71R. 71G. In the manner of each of the transparent electrode layer and the reflective electrode layer 111 in the 71B, the IZO layer 132 as a transparent electrode layer is formed by, for example, sputtering.

The film thickness of the IZO layer 132 is set to, for example, 20 to 60 nm. In the present embodiment, the film thickness of the IZO layer 132 is set to 40 nm.

Then, as shown in FIG. 10(f), in the sub-pixel 71R. The resist pattern 203R is formed on the IZO layer 132 of the 71G by means of photolithography to cover the patterned transparent electrode layer and the reflective electrode layer 111 in plan view. 203G.

At this time, the resist pattern 203G is formed to be closer to the sub-pixel 71R so as to cover the end portion of the pattern of the p-ITO layer 113 under the reflective electrode layer 111 in plan view. The pattern of the p-ITO layer 113 in the 71G is wide.

In addition, the amount of protrusion of the resist pattern 203G from the pattern end portion of the p-ITO layer 113 in the plan view is the same as that of the resist pattern 202R, and is set to 2 μm.

Moreover, the resist pattern 203R is formed so as to cover the end portion of the pattern of the IZO layer 131 in a plan view, and is formed to be smaller than the sub-pixel 71R. The pattern of the IZO layer 131 in the 71G is wide.

Further, the amount of protrusion of the resist pattern 203G from the pattern end portion of the IZO layer 131 in plan view was set to 2 μm, respectively.

Then, the resist pattern 203R. 203G as a mask, using an etchant, as shown in Figure 10 (g), the pair is not by the resist pattern 203R. After the 203G mask IZO layer 132 is wet etched, the cleaning resist pattern 203R is peeled off by the resist stripping solution. 203G.

Further, as the etching liquid and the peeling liquid, the etching liquid and the peeling liquid which are the same as the etching liquid and the peeling liquid used for the etching shown in FIG. 10(e) can be used. Thereby, the IZO layer 132 can be selectively etched.

At this time, as described above, the p-ITO layer 113.114 and the reflective electrode layer 111 are not etched by the above etching liquid (oxalic acid) or the etching rate is remarkably slow. Therefore, the p-ITO layer 113.114 and the reflective electrode layer 111 remain without being removed by the above etching.

Thereby, as shown in FIG. 10(g), only the resist pattern 203R will be used. 203G mask sub-pixel 71R. The IZO layer 132 other than the 71G IZO layer 132 is removed.

Thereby, as shown in FIG. 10(g), the reflective electrode layer 111 is formed on the sub-pixel 71R by the p-ITO layer 113 which is a transparent electrode layer below the reflective electrode layer 111 and the transparent electrode which is the upper layer of the reflective electrode layer 111. The p-ITO layer 114 of the layer and the first electrode 21 surrounded by the IZO layer 131.132.

Further, the p-ITO layer 113 having the reflective electrode layer 111 as the transparent electrode layer under the reflective electrode layer 111 and the p-ITO layer 114 and the IZO layer as the transparent electrode layer above the reflective electrode layer 111 are formed in the sub-pixel 71G. The first electrode 21 surrounded by 132.

Further, the reflective electrode layer 111 is formed on the sub-pixel 71B by the p-ITO layer 113 which is a transparent electrode layer under the reflective electrode layer 111 and the p-ITO layer 114 which is a transparent electrode layer above the reflective electrode layer 111. The first electrode 21.

Then, as shown in FIG. 10(h), in step S3, in each of the sub-pixels 71R. 71G. A side cover 15 is formed on the first electrode 21 of 71B.

In the present embodiment, the p-ITO layer 114 and the IZO layer 131.132 which are transparent electrode layers on the upper surface of the reflective electrode layer 111 function as the transparent electrode layer 121 which forms the microcavity.

Therefore, in the sub-pixel 71R, the film thickness of the p-ITO layer 114 and the IZO layer 131.132 is set such that the total thickness of the p-ITO layer 114 and the IZO layer 131.132 becomes the optical path length 73R of the sub-pixel 71R. .

Further, in the sub-pixel 71G, the p-ITO layer 114 and the IZO layer 132 which are transparent electrode layers on the upper surface of the reflective electrode layer 111 function as the transparent electrode layer 121 which forms the microcavity.

Therefore, in the sub-pixel 71G, the film thickness of the p-ITO layer 114 and the IZO layer 132 is set so that the total thickness of the p-ITO layer 114 and the IZO layer 132 becomes the optical path length 73G of the sub-pixel 71G.

Further, in the sub-pixel 71B, the p-ITO layer 114 which is a transparent electrode layer above the reflective electrode layer 111 functions as a transparent electrode layer 121 which forms a microcavity.

Therefore, in the sub-pixel 71B, the film thickness of the p-ITO layer 114 is set such that the film thickness of the p-ITO layer 114 becomes the optical path length 73G of the sub-pixel 71G.

As described above, according to the present embodiment, after the a-ITO layer 112 is crystallized and converted into the p-ITO layer 114 as described above, the IZO layer is formed on the p-ITO layer 114 as an etching resistance lower than p. The transparent electrode layer of the -ITO layer 114 is selectively etched by photolithography to pattern the IZO layer, whereby the IZO layer can be deposited on any of the sub-pixels.

Thereby, the number of layers of the transparent electrode layer can be changed between at least two sub-pixels.

Further, according to the present embodiment, the IZO layer having a lower film forming etching resistance than the p-ITO layer 114 is repeatedly formed, and the IZO layer is selectively etched by photolithography to pattern the IZO layer. The IZO layer can be stacked on the desired sub-pixels.

<variation>

However, the embodiment is not limited thereto, and may be provided in each sub-pixel 71R. 71G. 71B is further laminated with a p-ITO layer (not shown) or a transparent electrode layer such as an IZO layer.

For example, in the present embodiment, the IZO layer 131 is laminated in a single layer in the step shown in FIG. 10(d). However, in this case, the IZO layer 131 may be formed to have lower etching resistance than the p-ITO layer 114. Film formation of a plurality of transparent electrode layers.

For example, in the step shown in FIG. 10(d), after the a-ITO layer is further formed on the IZO layer 131, the resist pattern 202R is formed on the sub-pixel 71R, and the IZO layer 131 may be further sequentially processed. After the a-ITO layer and the IZO layer are formed, a resist pattern 202R is formed on the sub-pixel 71R.

Further, when the a-ITO layer is formed as described above as a transparent electrode layer having lower etching resistance than the p-ITO layer 114, as in the first embodiment, the resist pattern 202R is used as a mask for wet etching. Thereafter, heat treatment is performed to convert the a-ITO layer into a p-ITO layer.

Furthermore, it goes without saying that the same method can be applied to the steps shown in FIG. 10(e) and FIG. 10(f), and other than that, it is undoubtedly further shown by FIG. 10(g). Between the steps and the step shown in FIG. 10(h), the laminated single layer or the plurality of layers are less etch-resistant than the layer of the p-ITO layer, and wet etching is performed in the same manner as described above, whereby the transparent electrode layer can be further deposited.

In either case, according to the present embodiment, if the number of transparent electrode layers is the same as that of the laminated layer, the number of available times is less than that of the previous photolithography, and the reflective electrode layer is changed between sub-pixels having different display colors. The number of layers of the transparent electrode layer or the total film thickness.

<effect>

In the present embodiment, the difference in etching selectivity between the transparent electrode layer containing the polycrystalline transparent electrode material and the transparent electrode layer formed on the transparent electrode layer containing the polycrystalline transparent electrode material is, for example, as described above. The difference in etching selectivity between the ITO layer and the IZO layer (and the a-ITO layer) is performed to deposit the transparent electrode layer.

Furthermore, in the example shown in FIG. 10(g), the sub-pixel 71R. 71G is formed with an IZO layer 132 having the same film thickness.

However, in the present embodiment, the resist pattern 202R is formed only in the sub-pixel 71R in the step shown in FIG. 10(d), whereby the IZO layer other than the sub-pixel 71R is formed as shown in FIG. 10(e). 131 is removed, and only the sub-pixel 71R is stacked There is an IZO layer 131.

Therefore, according to the present embodiment, the film thickness of the a-ITO layer 112 is set so as to obtain the desired optical path length 73B, and the film thickness of the IZO layer 131 is set to be subtracted from the desired optical path length 73G by a- The film thickness of the film thickness of the ITO layer 112 (in other words, the film thickness of the p-ITO layer 114) is set to a film thickness of the IZO layer 132 minus the film of the a-ITO layer 112 from the desired path length 73R. The film thickness of the film thickness of the thick and IZO layer 131 can be set arbitrarily and easily. Change each sub-pixel 71R. 71G. 71B's light path length is 73R. 73G. 73B.

Therefore, in the present embodiment, each sub-pixel 71R can be arbitrarily and easily adjusted by secondary photolithography. 71G. The light path length in 71B is 73R. 73G. 73B, and is not restricted by the optical path length as in Patent Document 3.

Therefore, in this embodiment, as shown in FIG. 10(d). (g) is shown as being for each sub-pixel 71R. 71G. 71B The number of photolithography required to change the film thickness (the number of layers) of the transparent electrode layer can be arbitrarily and easily changed the thickness of the first electrode 21 for each sub-pixel 71 by secondary photolithography.

Further, in the present embodiment, as described above, even if the etching of the reflective electrode layer 111 is included, the number of photolithography can be suppressed to three times. Further, the number of times of photolithography is not increased, and the p-ITO layer 114 can be formed as a transparent electrode layer on the reflective electrode layer 111 of the sub-pixel 71B having the shortest optical path length.

Therefore, the number of available times is smaller than that of the previous photolithography, and the film thickness of the first electrode 21, in other words, the optical path length of the organic EL element 20, is arbitrarily changed for each sub-pixel 71.

Further, according to the present embodiment, the transparent electrode layer containing the amorphous transparent electrode material can be converted into a transparent material containing the polycrystalline transparent electrode material. An electrode layer, as described above, a difference in etching selectivity between a transparent electrode layer containing a polycrystalline transparent electrode material and a transparent electrode layer formed on the transparent electrode layer containing the polycrystalline transparent electrode material, for example, as described above The difference in etching selectivity between the p-ITO layer and the IZO layer is performed, and the deposition of the transparent electrode layer is performed. Therefore, the processing beat can be further shortened.

Further, in the present embodiment, the p-ITO layer formed on the lower layer or the upper layer of the reflective electrode layer 111 is formed on the terminal portion of the signal line 14 such as the source line by the film formation step of the a-ITO layer. The film a-ITO layer can be used as a protective film covering the terminal portion of the signal line 14 such as the source line.

Further, the other transparent electrode layer laminated on the reflective electrode layer 111 can be used as a terminal portion covering the signal line 14 by laminating the transparent electrode layers on the terminal portions of the signal lines 14 such as the source lines. Protective film.

[Embodiment 3]

The present embodiment will be mainly described with reference to Figs. 11 and 12 as follows.

In the present embodiment, the differences from the first and second embodiments will be mainly described, and the same components as those of the components used in the first and second embodiments will be denoted by the same reference numerals, and the description will be omitted. Description.

Fig. 11 is a cross-sectional view showing a schematic configuration of an organic EL display panel 1 of the present embodiment. In addition, the exploded cross-sectional view of the main part of the organic EL display device 100 of the present embodiment is the same as that of FIG. 2, and the plan view of the schematic configuration of the support substrate 10 in the organic EL display device 100 is the same as that of FIG. Further, a plan view showing a configuration of a main portion of the display region R1 in the support substrate 10 is the same as that of FIG. 4. Figure 11 is equivalent to showing the same as shown in Figure 4. A cross-sectional view showing a schematic configuration of the organic EL display panel 1 when the organic EL display panel 1 is cut by the A-A line.

In the first and second embodiments, as described above, a case where a plurality of light-emitting layers are laminated and the luminescent colors are superimposed to obtain W luminescence has been described as an example.

However, the method of forming the first electrode 21 shown in the first and second embodiments can be similarly applied to the case where the coating method for vapor deposition for each color of the light-emitting layer is used in the same plane. A plurality of light-emitting layers having different luminescent colors are formed.

In the full-color organic EL display device 100 using the split coating method, as shown in FIG. 11, a light-emitting layer 82R of each color such as RGB is provided. 82G. The organic EL element 20 of 82B is sub-pixel 71R. 71G. The form of 71B is formed on the support substrate 10. In the organic EL display device 100 as described above, the TFTs 12 are selectively used to selectively emit the organic EL elements 20 at a desired luminance, thereby performing color image display.

In this embodiment, a plurality of light-emitting layers 82R having different luminescent colors are formed in the same plane. 82G. 82B, and for each sub-pixel 71R with different illuminating colors. 71G. The 71B is introduced into the microcavity structure, and as described above, the full color image is displayed.

Further, in the present embodiment, as shown in FIG. 11, by using the CF layer 52 in combination, the spectrum of light emitted from the organic EL element 20 can be adjusted by the CF layer 52.

As shown in FIG. 11, the organic EL display device 100 of the present embodiment has a different laminated structure of the organic EL layer 43 in the organic EL element 20, and It has the same structure as the organic EL display device 100 shown in FIG.

Hereinafter, the configuration of the organic EL element 20 of the present embodiment will be described.

<Configuration of Organic EL Element 20>

In the organic EL display device 100 shown in FIG. 11, the organic EL layer 43 is formed between the first electrode 21 and the second electrode 31, and is formed in order from the first electrode 21 side. For example, the hole injection layer and the hole transport layer 81, the light-emitting layer 82R. 82G. 82B, an electron transport layer and an electron injection layer 83.

Further, the hole injection layer and the hole transport layer and the electron transport layer and the electron injection layer are as described in the first embodiment, and the hole injection layer and the hole transport layer 81 and the electron transport layer are omitted here. The description of the electron injection layer 83 is also provided.

As shown in FIG. 11, the hole injection layer and the hole transport layer 81 are formed in the same manner over the entire surface of the display region R1 in the support substrate 10 so as to cover the first electrode 21 and the side cover 15.

On the hole injection layer and the hole transmission layer 81, respectively corresponding to the sub-pixel 71R. 71G. 71B is formed with a light-emitting layer 82R. 82G. 82B.

Light emitting layer 82R. 82G. In the 82B system, the hole injected from the side of the first electrode 21 and the electron injected from the side of the second electrode 31 are recombined to emit light. In this embodiment, the light-emitting layer 82R. 82G. 82B is also formed by materials with high luminous efficiency such as low molecular weight fluorescent pigments and metal complexes.

The electron transport layer and the electron injection layer 83 are arranged to cover the light emitting layer 82R. 82G. 82B and the hole injection layer and the hole transport layer 81 are in the manner of the light-emitting layer 82R. 82G. 82B and hole injection layer and hole transmission layer 81 And the entire surface of the display region R1 in the support substrate 10 is formed in the same manner.

In the present embodiment, as described above, the case where the hole injection layer and the hole transport layer 81 are provided as the hole injection layer and the hole transport layer is exemplified, and the electrons are provided. The case where the transport layer and the electron injection layer 83 are used as the electron transport layer and the electron injection layer is illustrated as an example. However, the present embodiment is not limited thereto, and the hole injection layer and the hole transport layer may be formed as separate layers. Similarly, the electron transport layer and the electron injection layer may be formed as separate layers.

Furthermore, the light-emitting layer 82R. 82G. The organic layer other than 82B is not a layer necessary for the organic EL layer 43, and may be appropriately formed according to the characteristics of the desired organic EL element 20.

Further, as with the hole injection layer and the hole transport layer 81 and the electron transport layer and the electron injection layer 83, one layer may have a plurality of functions.

Further, the organic EL layer 43 may be chased by the sub-blocking layer as needed. For example, by the light-emitting layer 82R. 82G. A hole blocking layer is added between the 82B and the electron transport layer and the electron injecting layer 83 as a carrier blocking layer, which prevents the holes from passing through the electron transporting layer and the electron injecting layer 83, thereby improving luminous efficiency.

In the present embodiment, the first electrode 21 (anode), the second electrode 31 (cathode), and the light-emitting layer 82R are appropriately inserted. 82G. The layer other than 82B can be.

As the configuration of the organic EL element 20, for example, a layer configuration as shown in the following (1) to (8) can be employed.

(1) First electrode/light emitting layer/second electrode

(2) First electrode/hole transport layer/light-emitting layer/electron transport layer/second electrode

(3) 1st electrode/hole transport layer/light emitting layer/hole blocking layer/electron transport layer/ Second electrode

(4) First electrode/hole transport layer/light-emitting layer/hole barrier layer/electron transport layer/electron injection layer/second electrode

(5) First electrode/hole injection layer/hole transmission layer/light-emitting layer/electron transport layer/electron injection layer/second electrode

(6) First electrode/hole injection layer/hole transmission layer/light-emitting layer/hole barrier layer/electron transport layer/second electrode

(7) First electrode/hole injection layer/hole transmission layer/light-emitting layer/hole blocking layer/electron transport layer/electron injection layer/second electrode

(8) First electrode/hole injection layer/hole transmission layer/electron barrier layer/light-emitting layer/hole barrier layer/electron transport layer/electron injection layer/second electrode

Further, in the present embodiment, the first electrode 21 is also an anode and the second electrode 31 is a cathode. In the present embodiment, when the first electrode 21 is a cathode and the second electrode 31 is an anode, the order of lamination of the organic EL layer 43 is reversed.

<Method of Manufacturing Organic EL Display Device 100>

Next, a method of manufacturing the organic EL display device 100 of the present embodiment will be described.

In the present embodiment, the outline of the flow of the manufacturing steps of the organic EL display device 100 is also described using FIG. In the present embodiment, when the first electrode 21 is a cathode and the second electrode 31 is an anode, the material and thickness of the first electrode 21 and the second electrode 31 are reversed. .

Hereinafter, an organic EL display device 100 having the configuration shown in FIG. 11 will be listed. As an example, an outline of the flow of the manufacturing steps of the organic EL layer 43 shown in FIG. 7 in the step S4 will be described.

<Flow of Production Step of Organic EL Layer 43>

Fig. 12 is a flow chart showing an example of the steps of producing the organic EL layer 43 shown in Fig. 11 in steps.

In the present embodiment, first, in the step S4 shown in FIG. 7, the support substrate 10 subjected to decompression baking for dehydration and oxygen plasma treatment as the surface cleaning of the first electrode 21 is as shown in the drawing. As shown in FIG. 12, first, the hole injection layer and the hole transport layer 81 are patterned by vacuum deposition on the entire surface of the display region R1 of the support substrate 10 so as to cover the first electrode 21 and the side cover 15 ( Hole injection layer. Hole transport layer) (step S31).

Further, as described above, the hole injection layer and the hole transport layer 81 are formed in the same manner over the entire surface of the display region R1 in the support substrate 10. Therefore, similarly to the hole injection layer 22 and the hole transport layer 23 in the first embodiment, the open mask having the entire surface opening of the display region R1 is used as a mask for vapor deposition to form a film.

On the other hand, in the organic EL display device 100 of the full-color coating system using the coating method, as described above, the organic EL element 20 is selectively used to emit light with a desired luminance by using the TFT 12 as described above. Color image display.

Therefore, in order to manufacture the above-described organic EL display device 100, it is necessary to form a light-emitting layer 82R containing an organic light-emitting material emitting light of each color in a specific pattern for each organic EL element 20. 82G. 82B.

Therefore, for the light-emitting layer 82R. 82G. Film formation of 82B will only make the desired The precise mask of the opening of the region in which the light-emitting material of the display color is vapor-deposited is used as a mask for vapor deposition, and is subjected to partial vapor deposition by a vacuum deposition method (step S32). Thereby, formed with each sub-pixel 71R. 71G. 71B corresponds to the pattern film.

Then, a light-emitting layer 82R is formed. 82G. On the support substrate 10 of the 82B, an open mask having the entire surface opening of the display region R1 is used as a mask for vapor deposition, and an electron transport layer and an electron injection layer 83 are sequentially formed on the entire surface of the pixel region by vacuum evaporation. (Electron Transport Layer. Electron Injection Layer) (Step S33) and Second Electrode 31 (Step S5).

Further, in the present embodiment, the vacuum vapor deposition apparatus similar to the prior art can be used for the vapor deposition. Further, conditions such as a preferable vacuum limit rate are as described in the first embodiment. Therefore, the detailed description of the vacuum vapor deposition apparatus and the vapor deposition method will be omitted.

Further, in the present embodiment, the material of the hole injection layer and the hole transport layer and the electron transport layer and the electron injection layer which are used as the hole injection layer and the hole transport layer 81 and the electron transport layer and electron injection layer 83 are used. The film thickness is as described in the first embodiment.

Also, for use as the light-emitting layer 82R. 82G. The material of the light-emitting layer of 82B is as described in the first embodiment. Furthermore, for the light-emitting layer 82R. 82G. 82B, a single material having a different luminescent color may be used separately, or a mixed material in which another material is used as a host material and other materials are used as a guest material or a dopant may be used.

Furthermore, as the light-emitting layer 82R in this case. 82G. The film thickness of 82B is, for example, 10 to 100 nm.

In the present embodiment, as shown in FIG. 11, as in the first embodiment, By forming the first electrode 21 as a laminated structure of the reflective electrode layer 111 and the transparent electrode layer 121, the organic EL element 20 is introduced into a microcavity structure.

Therefore, in the present embodiment, each of the light-emitting layers 82R. 82G. The film thickness of 82B was set to the same film thickness. Therefore, the optical path length 73R is set in the same manner as in the first and second embodiments. 73G. 73B.

Therefore, the hole injection layer and the hole transport layer 81, the electron transport layer and electron injection layer 83, the light emitting layer 82R. 82G. The material and film thickness of 82B can be set to be the same as before. Therefore, in the present embodiment, the hole injection layer and hole transport layer 81, the electron transport layer and electron injection layer 83, and the light emitting layer 82R are omitted. 82G. Description of the specific material and film thickness of 82B.

<effect>

As described above, in the first embodiment, the first electrode 21 is a laminated structure of the reflective electrode layer 111 and the transparent electrode layer 121, and the microcavity structure is introduced into the organic EL element 20 in the same manner as in the first embodiment. .

Therefore, in the present embodiment, in order to introduce the microcavity structure to the organic EL element 20, it is not necessary to change each of the light-emitting layers 82R for each luminescent color. 82G. The film thickness of 82B.

Therefore, in the present embodiment, as in the case of using the light-emitting layer of the light-emitting layer as in the first to seventh embodiments, each of the light-emitting layers 82R may be used. 82G. The film thickness of 82B is as thin as it is, so the processing beat can be shortened.

Moreover, in the present embodiment, the self-luminous layer 82R is obtained by the organic EL element 20. 82G. The light from the 82B is added to the light obtained by the microcavity effect. Further, by adjusting the light by the CF layer 52 provided on the sealing substrate 50, light having a desired spectrum can be extracted to the outside. Therefore, in this In an embodiment, the light-emitting layer 82R of the split coating method is used in combination as described above. 82G. 82B, microcavity effect and CF layer 52 can improve color purity.

Moreover, it is needless to say that in the present embodiment, each sub-pixel 71R is used in the same manner as in the first and second embodiments. 71G. 71B changes the film thickness of the transparent electrode layer 121 in the first electrode 21, and the same effects as those in the first and second embodiments are obtained.

<point summary>

As described above, a method of manufacturing a display device according to an aspect of the present invention is a method in which a first transparent electrode layer containing an amorphous transparent electrode material is formed on a layer of a reflective electrode layer and is collectively etched. The first transparent electrode layer containing an amorphous transparent electrode material is converted into a first transparent electrode layer containing a polycrystalline transparent electrode material, and the etching resistance of the second transparent electrode layer formed thereon is formed. The transparent electrode layer is laminated in a difference, whereby the total film thickness of the transparent electrode layer is changed between the sub-pixels.

Therefore, a method of manufacturing a display device according to an aspect of the present invention is a method of manufacturing a display device in which a pair of electrodes forming an electric field in each sub-pixel includes a reflective electrode layer and is formed on the reflective electrode layer. At least one transparent electrode layer, and a plurality of the transparent electrode layers are formed on the reflective electrode layer of at least one of the sub-pixels, and the overall thickness of the transparent electrode layer is different between sub-pixels having different display colors, and the display device is different The manufacturing method includes the steps of: forming a reflective electrode layer; forming a first transparent electrode layer, the film is formed on the upper layer of the reflective electrode layer, and forming a first transparent electrode layer containing an amorphous transparent electrode material; a step of the first amorphous electrode material containing amorphous material by photolithography The transparent electrode layer and the reflective electrode layer are collectively etched and patterned, and the first transparent electrode layer crystallization step is performed by patterning the amorphous amorphous electrode material in the patterning step. The first transparent electrode layer is crystallized to be converted into a first transparent electrode layer containing a polycrystalline transparent electrode material; and the second transparent electrode layer stacking step is performed on the first transparent electrode of the polycrystalline transparent electrode material a second transparent electrode layer containing a transparent electrode material having a lower etching resistance than the first transparent electrode layer containing the polycrystalline transparent electrode material is formed on the layer, and the second transparent layer is selectively selected by photolithography The transparent electrode layer is etched to pattern it.

According to the above method, it is possible to provide a practical display in which a transparent electrode layer is laminated on a reflective electrode layer in each sub-pixel, and the film thickness of the transparent electrode layer on the reflective electrode layer can be arbitrarily changed between sub-pixels having different display colors. The manufacturing method of the device, and the number of times of photolithography can be reduced.

Further, in the method of manufacturing the display device, it is preferable that the second transparent electrode layer stacking step is performed by changing a sub-pixel in which a resist pattern is formed, and includes the following steps: selective by photolithography When the second transparent electrode layer is etched and patterned, a resist pattern is formed only for one sub-pixel, and the second transparent electrode layer is etched by using the resist pattern as a mask. A pattern of the second transparent electrode layer is formed on the one sub-pixel.

According to the above method, as described above, as the number of photolithography required to change the total film thickness of the transparent electrode layer, the transparent electrode layer can be arbitrarily changed for each sub-pixel by secondary photolithography. The film thickness is increased, and the film thickness of the second transparent electrode layer in any of the sub-pixels can be independent of The film thickness of the second transparent electrode layer in the sub-pixel is set.

According to the above method, as described above, by including the step of forming the pattern of the second transparent electrode layer only by the one sub-pixel, the optical path length in each sub-pixel can be arbitrarily and easily adjusted without being as in the patent document. 3 is generally restricted by the long path of light.

Further, in the method of manufacturing the display device, the second transparent electrode layer is a transparent electrode layer containing an amorphous transparent electrode material, and the second transparent electrode layer stacking step includes the step of forming a second transparent electrode layer. a step of forming a second transparent electrode layer containing the amorphous transparent electrode material; and a second transparent electrode layer patterning step of the amorphous transparent electrode material by photolithography The second transparent electrode layer is etched and patterned, and the second transparent electrode layer is crystallized by crystallizing and transforming the second transparent electrode layer containing the amorphous transparent electrode material obtained by patterning. a second transparent electrode layer comprising a polycrystalline transparent electrode material; wherein the second transparent electrode layer forming step, the second transparent electrode layer patterning step, and the second transparent electrode layer forming step are repeated in the second transparent electrode layer stacking step 2 Transparent electrode layer crystallization step, stacking any number of transparent electrode layers containing polycrystalline transparent electrode material for any sub-pixel.

According to the above method, as described above, the deposition of the transparent electrode layer is performed by the difference in etching selectivity between the transparent electrode layer containing the amorphous transparent electrode material and the transparent electrode layer containing the polycrystalline transparent electrode material.

According to the above method, the film thickness of each transparent electrode layer can be set independently of the film thickness of the transparent electrode layer in the other sub-pixels, and can be adjusted arbitrarily and easily The optical path in each sub-pixel is long.

Further, in the method of manufacturing the display device, it is preferable that the first and second transparent electrode layers are indium tin oxide.

Amorphous indium tin oxide can be easily converted into polycrystalline indium tin oxide by heat treatment. The polycrystalline indium tin oxide is higher in etching resistance than the amorphous indium tin oxide, and in the etching step of the amorphous indium tin oxide (the second transparent electrode layer patterning step and the second transparent electrode layer layering step), Not etched or the etch rate is significantly slower. Therefore, in the etching step of the amorphous indium tin oxide, only the amorphous indium tin oxide can be selectively etched.

Further, in the second transparent electrode layer patterning step, it is preferable that a resist pattern is formed on the second transparent electrode layer containing the amorphous transparent electrode material, and the resist pattern is formed in a plan view and the reflective electrode layer And the first transparent electrode layer containing the polycrystalline transparent electrode material is superposed, and is formed to be larger than the first transparent electrode layer of the reflective electrode layer and the polycrystalline transparent electrode material in plan view, and the resist pattern is used as the resist pattern The second transparent electrode layer is etched by the mask to pattern it.

According to the type of the reflective electrode material, when the reflective electrode layer is in an exposed state (that is, in an exposed state), for example, when ultraviolet light is irradiated to improve the wettability of the resist, oxidation occurs to lower the reflection property, or the solvent resistance is lowered. Low and the possibility of solvent penetration. Therefore, in the case where the reflective electrode layer as described above contains the reflective electrode material as described above, it is not preferable that the reflective electrode layer is in an exposed state.

However, according to the above configuration, the first transparent electrode layer and the second transparent electrode layer which are made of a polycrystalline transparent electrode material can surround the reflective electrode. Since the layer is formed, when the display device is manufactured, the reflective electrode layer can be protected from the above-mentioned factors that are detrimental to the quality of the reflective electrode layer.

Further, in the method of manufacturing the display device, it is preferable that the second transparent electrode layer is a layer containing a transparent electrode material having a composition different from that of the first transparent electrode layer.

According to the above method, the transparent electrode layer containing the amorphous transparent electrode material can be converted into the transparent electrode layer containing the polycrystalline transparent electrode material, and the first transparent electrode layer containing the polycrystalline transparent electrode material can be used and the second The deposition of the transparent electrode layer is performed by the difference in etching selectivity due to the difference in etching resistance of the transparent electrode layer.

In this case, it is preferable that the first transparent electrode layer is indium tin oxide and the second transparent electrode layer is indium zinc oxide.

Amorphous indium tin oxide can be easily converted into polycrystalline indium tin oxide by heat treatment. The polycrystalline indium tin oxide is higher in etching resistance than indium zinc oxide, and when indium zinc oxide is etched in the etching step (second transparent electrode layer lamination step) of the second transparent electrode layer, it is not etched or etched. The speed is significantly slower. Therefore, in the etching step of the second transparent electrode layer, the second transparent electrode layer containing only indium zinc oxide is selectively etched.

Further, in the second transparent electrode layer stacking step, it is preferable that the second transparent electrode layer is etched by using a resist pattern as a mask, and the resist pattern is formed in a plan view and the reflective electrode layer and the plurality of layers. The first transparent electrode layer of the transparent electrode material of the crystal is superposed, and is formed to be larger than the first transparent electrode layer of the reflective electrode layer and the polycrystalline transparent electrode material in plan view.

In this case, the reflective electrode layer may be surrounded by the first transparent electrode layer and the second transparent electrode layer containing a polycrystalline transparent electrode material.

Further, in the method of manufacturing the display device, it is preferable that the reflective electrode layer contains any one selected from the group consisting of silver, a silver alloy, and an aluminum alloy.

These materials are such that no electrolytic corrosion reaction occurs between the amorphous transparent electrode layers. Therefore, it is suitable for the reflective electrode material in the above reflective electrode layer.

Further, in the method of manufacturing the display device, preferably, the pair of electrodes are an anode and a cathode, the one electrode is an anode, and the anode and the cathode are formed by sandwiching an organic electroluminescent layer with the anode and the cathode. And an organic electroluminescent layer.

According to the above method, the optical path length of the organic electroluminescence element in which the organic electroluminescent layer is sandwiched between the anode and the cathode can be easily changed for each sub-pixel having a different luminescent color.

Therefore, according to the above method, an organic electroluminescence element having a microcavity structure can be obtained. Therefore, color purity, luminescence chromaticity, luminous efficiency, and the like in the display device using the above organic electroluminescence device can be improved by the microcavity effect.

Further, as described above, a display device according to an aspect of the present invention is a display device in which a pair of electrodes forming an electric field in each sub-pixel includes one of a reflective electrode layer and at least a reflective electrode layer formed on the reflective electrode layer. a transparent electrode layer, wherein a plurality of the transparent electrode layers are formed on the reflective electrode layer of the at least one sub-pixel, and the film thickness of the transparent electrode layer is different between the sub-pixels having different display colors, and the plurality of transparent electrodes Layer There are mutually different compositions, and the etching resistance of the lower transparent electrode layer is higher than that of the upper transparent electrode layer.

According to the above configuration, it is possible to provide a display device which is different in film thickness of each of the sub-pixels having different display colors and which can be manufactured by a practical method.

Further, in the above display device, it is preferable that the lower transparent electrode layer contains polycrystalline indium tin oxide, and the upper transparent electrode layer contains indium zinc oxide.

Amorphous indium tin oxide can be easily converted into polycrystalline indium tin oxide by heat treatment. The polycrystalline indium tin oxide is more resistant to etching than indium zinc oxide, and when indium zinc oxide is etched, it is not etched or the etching rate is significantly slower. Therefore, it is possible to selectively etch only the transparent electrode layer containing indium zinc oxide.

Therefore, according to the above configuration, it is possible to provide a display device which is different in film thickness of each of the sub-pixels having different display colors and which can be manufactured by a practical method.

Further, in the above display device, it is preferable that the reflective electrode layer contains any one selected from the group consisting of silver, a silver alloy, and an aluminum alloy.

When a transparent electrode material having a composition different from each other and having different etching resistance is used for the lower transparent electrode layer and the upper transparent electrode layer as described above, the combination of the transparent electrode material and the reflective electrode material may occur. The enthalpy of electro-erosion reaction.

However, in the case where the above-mentioned reflective electrode layer contains the above-mentioned reflective electrode material, there is no fear as described above. Therefore, the above-mentioned reflective electrode material is suitable for the reflective electrode material in the above-mentioned reflective electrode layer.

Further, in the above display device, it is preferable that the upper transparent electrode layer covers a surface of the lower transparent electrode layer and a side surface of the reflective electrode layer.

According to the type of the reflective electrode material, when the reflective electrode layer is in an exposed state (that is, in an exposed state), for example, when ultraviolet light is irradiated to improve the wettability of the resist, oxidation occurs to lower the reflection property, or the solvent resistance is lowered. Low and the possibility of solvent penetration. Therefore, in the case where the reflective electrode layer as described above contains the reflective electrode material as described above, it is not preferable that the reflective electrode layer is in an exposed state.

However, according to the above configuration, when the display device is manufactured, the reflective electrode layer can be protected from the above-mentioned factors that are detrimental to the quality of the reflective electrode layer.

Therefore, according to the above configuration, it is possible to provide a display device including a reflective electrode layer having excellent reflection characteristics.

The present invention is not limited to the above embodiments, and various modifications can be made within the scope of the technical means. The embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technology of the present invention. In the scope.

[Industrial availability]

The present invention can be preferably applied to a display device using a light-emitting element which can be used as a minute resonator such as an organic EL element or an inorganic EL element, and a method of manufacturing the same.

1‧‧‧Organic EL display panel

2‧‧‧Electrical wiring terminals

10‧‧‧Support substrate

11‧‧‧Insert substrate

12‧‧‧TFT

13‧‧‧Interlayer insulating film

13a‧‧‧Contact hole

14‧‧‧ signal line

15‧‧‧ side cover

15R‧‧‧ openings

15G‧‧‧ openings

15B‧‧‧ openings

20‧‧‧Organic EL components

21‧‧‧1st electrode

22‧‧‧ hole injection layer

23‧‧‧ hole transport layer

24‧‧‧1st luminescent layer

25‧‧‧Electronic transport layer

26‧‧‧Carrier generation layer

27‧‧‧ hole transport layer

28‧‧‧2nd luminescent layer

29‧‧‧Electronic transport layer

30‧‧‧Electronic injection layer

31‧‧‧2nd electrode

41‧‧‧ sealing resin layer

42‧‧‧filled resin layer

43‧‧‧Organic EL layer

50‧‧‧Seal substrate

51‧‧‧Insert substrate

52‧‧‧CF layer

53‧‧‧BM

60‧‧‧Connecting Department

70‧‧‧ pixels

71‧‧‧Subpixel

71B‧‧‧Subpixel

71G‧‧‧Subpixel

71R‧‧‧Subpixel

72‧‧‧Lighting area

73B‧‧‧ long path length

73G‧‧‧ long path length

73R‧‧‧ long path length

81‧‧‧ hole injection layer and hole transmission layer

82B‧‧‧Lighting layer

82G‧‧‧Lighting layer

82R‧‧‧Lighting layer

83‧‧‧Electron transport layer and electron injection layer

100‧‧‧Organic EL display device

101‧‧‧Pixel Department

102‧‧‧Development Department

103‧‧‧Connecting terminal

110‧‧‧a-ITO layer

111‧‧‧Reflective electrode layer

112‧‧‧a-ITO layer

113‧‧‧p-ITO layer

114‧‧‧p-ITO layer

115‧‧‧a-ITO layer

116‧‧‧p-ITO layer

117‧‧‧a-ITO layer

118‧‧‧p-ITO layer

121‧‧‧Transparent electrode layer

131‧‧‧IZO layer

132‧‧‧IZO layer

201B‧‧‧resist pattern

201G‧‧‧resist pattern

201R‧‧‧resist pattern

202G‧‧‧resist pattern

202R‧‧‧resist pattern

211B‧‧‧resist pattern

211G‧‧‧resist pattern

211R‧‧‧resist pattern

L‧‧‧ Sealed area

R1‧‧‧ display area

R2‧‧‧2nd electrode connection area

R3‧‧‧Terminal area

1(a) to (i) show the organic form of the top emission type of the first embodiment in steps. A cross-sectional view showing an example of a method of fabricating the first electrode in the EL display device.

FIG. 2 is an exploded cross-sectional view showing a schematic configuration of a main part of the organic EL display device of the first embodiment.

3 is a plan view showing a schematic configuration of a support substrate in the organic EL display device of the first embodiment.

4 is a plan view showing a configuration of a main portion of a display region in the support substrate shown in FIG. 3.

Fig. 5 is a cross-sectional view showing a schematic configuration of an organic EL display panel in the case where the organic EL display panel of the first embodiment is cut along the line A-A shown in Fig. 4 .

Fig. 6 is a schematic view for explaining an image display method of the organic EL display device of the first embodiment.

Fig. 7 is a flow chart showing an example of a manufacturing procedure of the organic EL display device of the first embodiment in steps.

Fig. 8 is a flow chart showing an example of the steps of producing the organic EL layer of the first embodiment in steps.

Figure 9 (a). (b) is a view schematically showing a schematic configuration of a first electrode when a side cover is formed on the first electrode shown in Fig. 1(i), (a) is a cross-sectional view, and (b) is a plan view.

(a) to (h) are cross-sectional views showing an example of the steps from the production of the first electrode in the top emission type organic EL display device 00 of the second embodiment to the production of the side mask.

Figure 11 is a cross-sectional view showing a schematic configuration of an organic EL display panel of a third embodiment.

Figure 12 is a diagram showing one of the steps of producing the organic EL layer shown in Figure 11 in steps. Flow chart of the example.

13(a) to (f) are cross-sectional views showing an example of a method of changing the total film thickness of the transparent electrode layer on the reflective electrode layer of the anode for each sub-pixel in steps.

10‧‧‧Support substrate

71B‧‧‧Subpixel

71G‧‧‧Subpixel

71R‧‧‧Subpixel

110‧‧‧a-ITO layer

111‧‧‧Reflective electrode layer

112‧‧‧a-ITO layer

113‧‧‧p-ITO layer

114‧‧‧p-ITO layer

115‧‧‧a-ITO layer

116‧‧‧p-ITO layer

117‧‧‧a-ITO layer

118‧‧‧p-ITO layer

121‧‧‧Transparent electrode layer

201B‧‧‧resist pattern

201G‧‧‧resist pattern

201R‧‧‧resist pattern

202G‧‧‧resist pattern

202R‧‧‧resist pattern

Claims (14)

A manufacturing method of a display device, wherein one of the pair of electrodes forming an electric field in each sub-pixel of the display device comprises a reflective electrode layer and at least one transparent electrode layer formed on the reflective electrode layer, and A plurality of the transparent electrode layers are formed on the reflective electrode layer of the at least one sub-pixel, and the film thickness of the transparent electrode layer is different between the sub-pixels having different display colors, and the manufacturing method of the display device includes the following steps: film formation a reflective electrode layer; a first transparent electrode layer forming step of forming a first transparent electrode layer containing an amorphous transparent electrode material on the upper surface of the reflective electrode layer; and a patterning step by photolithography The first transparent electrode layer and the reflective electrode layer containing the amorphous transparent electrode material are collectively etched and patterned, and the first transparent electrode layer crystallization step is performed in the patterning step. The patterned first transparent electrode layer containing the amorphous transparent electrode material is crystallized and converted into a polycrystalline transparent electrode material. a transparent electrode layer; and a second transparent electrode layer stacking step, wherein the first transparent electrode layer containing the polycrystalline transparent electrode material is formed to have a film having a lower etching resistance than the polycrystalline transparent electrode material The second transparent electrode layer of the transparent electrode material of the transparent electrode layer is selectively patterned by photolithography to etch the second transparent electrode layer. The method of manufacturing the display device according to claim 1, wherein the step of depositing the second transparent electrode layer is performed by changing a sub-pixel forming a resist pattern, and comprising the steps of: selectively performing the above by photolithography When the second transparent electrode layer is etched and patterned, a resist pattern is formed only on one sub-pixel, and the second transparent electrode layer is etched by using the resist pattern as a mask, thereby only the above 1 The sub-pixels form a pattern of the second transparent electrode layer. The method of manufacturing a display device according to claim 1 or 2, wherein the second transparent electrode layer comprises a transparent electrode layer of an amorphous transparent electrode material, and the second transparent electrode layer stacking step comprises the following steps: a second transparent electrode a layer forming step of forming a second transparent electrode layer containing the amorphous transparent electrode material; and a second transparent electrode layer patterning step of transparently containing the amorphous layer by photolithography The second transparent electrode layer of the electrode material is etched and patterned, and the second transparent electrode layer crystallization step is to crystallize the patterned second transparent electrode layer containing the amorphous transparent electrode material. And converting into a second transparent electrode layer containing a polycrystalline transparent electrode material; and repeating the second transparent electrode layer forming step and the second transparent electrode layer patterning step in the second transparent electrode layer stacking step And a second transparent electrode layer crystallization step of laminating an arbitrary number of transparent electrode layers containing a polycrystalline transparent electrode material to any sub-pixel. The method of manufacturing a display device according to claim 3, wherein the first and second transparent electrode layers are indium tin oxide. The method of manufacturing a display device according to claim 3 or 4, wherein in the second transparent electrode layer patterning step, a resist pattern is formed on the second transparent electrode layer containing the amorphous transparent electrode material. The first transparent electrode layer of the reflective electrode layer and the polycrystalline transparent electrode material is formed in a plan view when the etching pattern is superposed on the reflective electrode layer and the first transparent electrode layer containing the polycrystalline transparent electrode material. When the resist pattern is used as a mask, the second transparent electrode layer is etched and patterned. The method of manufacturing a display device according to claim 1 or 2, wherein the second transparent electrode layer contains a layer of a transparent electrode material having a composition different from that of the first transparent electrode layer. The method of manufacturing a display device according to claim 6, wherein the first transparent electrode layer is indium tin oxide, and the second transparent electrode layer is indium zinc oxide. The method of manufacturing a display device according to claim 6 or 7, wherein in the step of depositing the second transparent electrode layer, the second transparent electrode layer is etched by using the resist pattern as a mask, and the resist pattern is viewed from above When it overlaps with the reflective electrode layer and the first transparent electrode layer containing the polycrystalline transparent electrode material, it is formed larger than the first transparent electrode layer of the reflective electrode layer and the polycrystalline transparent electrode material in plan view. The method of manufacturing a display device according to any one of claims 1 to 8, wherein the reflective electrode layer comprises any one selected from the group consisting of silver, a silver alloy, and an aluminum alloy. The method of manufacturing the display device according to any one of claims 1 to 9, wherein the pair of electrodes are an anode and a cathode, and the one electrode is an anode. Further, the anode, the cathode, and the organic electroluminescent layer are formed by sandwiching the organic electroluminescent layer with the anode and the cathode. A display device, characterized in that: among the pair of electrodes forming an electric field in each sub-pixel, one of the electrodes includes a reflective electrode layer and at least one transparent electrode layer formed on the reflective electrode layer, and is in at least one sub-pixel a plurality of layers of the transparent electrode layer are formed on the reflective electrode layer, and the thickness of the entire transparent electrode layer is different between sub-pixels having different display colors, and the plurality of transparent electrode layers have different compositions, and the lower transparent electrode layer The etching resistance is higher than the etching resistance of the upper transparent electrode layer. The display device of claim 11, wherein the lower transparent electrode layer contains polycrystalline indium tin oxide, and the upper transparent electrode layer contains indium zinc oxide. The display device of claim 11 or 12, wherein the reflective electrode layer comprises any one selected from the group consisting of silver, a silver alloy, and an aluminum alloy. The display device according to any one of claims 11 to 13, wherein the upper transparent electrode layer covers a surface of the lower transparent electrode layer and a side surface of the reflective electrode layer.