TW201329285A - Method - Google Patents
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- TW201329285A TW201329285A TW101143014A TW101143014A TW201329285A TW 201329285 A TW201329285 A TW 201329285A TW 101143014 A TW101143014 A TW 101143014A TW 101143014 A TW101143014 A TW 101143014A TW 201329285 A TW201329285 A TW 201329285A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/02—Oxides; Hydroxides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2073—Multistep pretreatment
- C23C18/2086—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
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Abstract
Description
本發明係關於向基板施加氧化鋅塗層之方法、可藉由該方法獲得之氧化鋅塗層以及包含基板及於基板上之該氧化鋅塗層之裝置。 The present invention relates to a method of applying a zinc oxide coating to a substrate, a zinc oxide coating obtainable by the method, and a device comprising the substrate and the zinc oxide coating on the substrate.
氧化鋅係具有纖鋅礦(六方密積)晶體結構及約3.3 eV之帶隙之透明半導體。該氧化鋅展現許多合意性質,其包括紫外光吸收、光導電性、光催化性、光可濕性、壓電性、抗菌特徵及傷口癒合。發現該等性質在技術上可應用於薄膜電晶體、染料敏化太陽能電池、動能收割機、液晶顯示器中之透明電極、防曬霜、織物保護及醫用敷料中。氧化鋅經常以薄膜形式使用,該等薄膜係藉由RF濺鍍、化學蒸氣沈積、蒸氣擴散催化、噴霧熱解、電沈積、溶膠-凝膠合成或脈衝雷射沈積來產生。 Zinc oxide is a transparent semiconductor having a wurtzite (hexagonal dense) crystal structure and a band gap of about 3.3 eV. The zinc oxide exhibits many desirable properties including ultraviolet light absorption, photoconductivity, photocatalytic, photo-wetability, piezoelectricity, antimicrobial characteristics, and wound healing. These properties were found to be technically applicable to thin film transistors, dye-sensitized solar cells, kinetic energy harvesters, transparent electrodes in liquid crystal displays, sunscreens, fabric protection, and medical dressings. Zinc oxide is often used in the form of thin films produced by RF sputtering, chemical vapor deposition, vapor diffusion catalysis, spray pyrolysis, electrodeposition, sol-gel synthesis or pulsed laser deposition.
該等方法之固有限制可包括其基板依賴性(例如對導電或物理上穩定的基板之需要)及(經常)嚴苛製程條件(例如高溫或氧化化學環境)。因此,就生成氧化鋅表面而言,尤其鑒於將來將材料的多功能屬性用於(例如)佩戴式電子產品(fibertronics)之新興領域中之應用而言,強烈需要更通用之方法。 The inherent limitations of such methods may include their substrate dependence (e.g., the need for a conductive or physically stable substrate) and (often) stringent process conditions (e.g., high temperature or oxidizing chemical environments). Thus, in terms of generating zinc oxide surfaces, a more versatile approach is strongly desired, especially in view of future applications of the versatility of materials for applications in emerging fields such as fibertronics.
無電鍍沈積氧化鋅因在溫和溫度(小於50℃)下進行、相對較低廉且產生高度結晶膜而具有潛在吸引力。Izaki,M.等人,J.Electrochem.Soc.,1997,144,L3及Shinagawa,T. 等人,Electrochim.Acta,2007,53,1170闡述在鈀(0)觸媒存在及水性條件下之硝酸鋅與二甲基胺基硼烷(DMAB)之間之反應(其中二甲基胺基硼烷還原硝酸鹽)。鈀(0)有效地催化二甲基胺基硼烷之氧化:(CH3)2NHBH3+2H2O → HBO2+(CH3)2NH2 ++5H++6e- Electroless deposition of zinc oxide is potentially attractive due to its relatively low temperature and low crystalline yield at high temperatures (less than 50 ° C). Izaki, M. et al., J. Electrochem. Soc. , 1997, 144, L3 and Shinagawa, T. et al., Electrochim . Acta, 2007, 53, 1170, which are described in the presence and aqueous conditions of palladium (0) catalyst. The reaction between zinc nitrate and dimethylaminoborane (DMAB) (where dimethylaminoborane reduces nitrate). Palladium (0) effectively catalyzes the oxidation of dimethylaminoborane: (CH 3 ) 2 NHBH 3 +2H 2 O → HBO 2 +(CH 3 ) 2 NH 2 + +5H + +6e -
從而達成硝酸根離子之相應還原(此造成pH之局部升高):NO3 -+H2O+2e- → NO2 -+2OH-。 Thereby a corresponding reduction of the nitrate ions (which causes a local increase in pH) is achieved: NO 3 - + H 2 O + 2e - → NO 2 - + 2OH - .
此pH增加根據以下酸-鹼反應觸發氧化鋅之生長:Zn2++2OH- → ZnO+H2O。 This increase in pH triggers the growth of zinc oxide according to the following acid-base reaction: Zn 2+ + 2OH - → ZnO + H 2 O.
本發明之目標係提供經由無電鍍沈積向基板施加氧化鋅塗層之方法,其實施可提高可產生該等氧化鋅塗層之容易性及/或效率,且亦可增強其性能特性。 It is an object of the present invention to provide a method of applying a zinc oxide coating to a substrate via electroless deposition, which can be implemented to increase the ease and/or efficiency with which the zinc oxide coating can be produced, and can also enhance its performance characteristics.
根據本發明之第一態樣,提供向基板施加氧化鋅塗層之方法,該方法包含以下步驟:(i)將含氮之芳香族雜環官能化塗層施加至基板;(ii)使含氮之芳香族雜環官能化塗層與包含鈀(II)及/或鉑(II)之試劑接觸,從而產生包含經錯合鈀(II)及/或鉑(II)之塗層;(iii)將塗層中之經錯合鈀(II)及/或鉑(II)還原成鈀(0)及/或鉑(0);及(iv)在還原劑存在及水性條件下使包含經錯合鈀(0)及/或鉑(0)之塗層與鋅鹽接觸以在基板上形成氧化鋅塗 層。 According to a first aspect of the present invention, there is provided a method of applying a zinc oxide coating to a substrate, the method comprising the steps of: (i) applying a nitrogen-containing aromatic heterocyclic functionalized coating to the substrate; (ii) including a nitrogen-containing aromatic heterocyclic functionalized coating is contacted with an agent comprising palladium (II) and/or platinum (II) to produce a coating comprising mis-palladium (II) and/or platinum (II); Reduction of the mis-palladium (II) and/or platinum (II) in the coating to palladium (0) and/or platinum (0); and (iv) inclusion in the presence of a reducing agent and aqueous conditions The coating of palladium (0) and/or platinum (0) is contacted with a zinc salt to form a zinc oxide coating on the substrate. Floor.
在實施例中,包含鈀(II)及/或鉑(II)之試劑係包含鈀(II)之試劑。 In an embodiment, the reagent comprising palladium (II) and/or platinum (II) is a reagent comprising palladium (II).
圖1展示本發明實施例之反應方案。 Figure 1 shows the reaction scheme of an embodiment of the invention.
步驟(i)涉及向基板施加含氮之芳香族雜環官能化塗層。 Step (i) involves applying a nitrogen-containing aromatic heterocyclic functionalized coating to the substrate.
步驟(i)可係用含氮之芳香族雜環基團官能化固體表面之無溶劑方法。 Step (i) can be a solventless process for functionalizing a solid surface with a nitrogen-containing aromatic heterocyclic group.
在實施例中,向基板施加含氮之芳香族雜環官能化塗層之步驟(i)係藉由電漿沈積來實施。 In an embodiment, the step (i) of applying a nitrogen-containing aromatic heterocyclic functionalized coating to the substrate is carried out by plasma deposition.
電漿化學沈積係經確立之用於官能化表面之技術。膜厚度可容易控制,且該製程係無溶劑的、保形的以及不依賴基板的,藉此使得其很好地適於施加至諸如紡織品等三維基板。 Plasma chemical deposition is an established technique for functionalizing surfaces. The film thickness can be easily controlled, and the process is solvent-free, conformal, and substrate-independent, thereby making it well suited for application to three-dimensional substrates such as textiles.
例如,脈衝電漿化學沈積(例如)聚(4-乙烯基吡啶)係一種用於將吡啶基團束縛於固體表面上之有潛力之方式。此包含在含有可聚合碳-碳雙鍵之氣態前體存在下調節放電。在機械學上,存在兩種對應於電漿工作循環之不同反應方案:接通時段與斷開時段(典型時標分別為微秒級及毫秒級)。亦即,在電漿之每個短爆發期間於表面處發生單體活化及反應性位點生成(經由VUV輻照、離子或電子轟擊),隨後在隨後延長之斷開時間中進行習用碳-碳雙鍵聚合(在對生長膜不存在任何VUV-、離子-或電子誘發之損傷之情形下)。可在所沈積奈米層內達成極高程度之前體結構保留,藉此在表面處獲得特定官能基。此外,藉由程 式化脈衝電漿工作循環,可控制(即調節)期望化學基團之表面密度。在開始電漿暴露期間,經由界面處生成之自由基位點將所獲得官能膜共價附接至下伏基板。其他優點包括以下事實:電漿化學方法快速(單一步驟),無溶劑,高能量效率,且放電之反應性氣態性質為基板材料及複雜幾何圖形(例如微球體、纖維、管等等)之整個主體提供保形性。任一因性能而依賴特定官能基之表面原則上可有效地藉由上述脈衝電漿化學方法來產生。過去所設計之實例包括:經酸酐、羧酸、胺、氰基、環氧化物、羥基、鹵化物、硫醇、糠基、全氟烷基、全氟亞甲基及三氟甲基官能化之表面。 For example, pulsed plasma chemical deposition, for example, poly(4-vinylpyridine) is a promising way to bind a pyridyl group to a solid surface. This involves adjusting the discharge in the presence of a gaseous precursor containing a polymerizable carbon-carbon double bond. Mechanically, there are two different reaction schemes corresponding to the plasma duty cycle: the on period and the off period (typical time scales are microseconds and milliseconds, respectively). That is, monomer activation and reactive site formation ( via VUV irradiation, ion or electron bombardment) occurs at the surface during each short burst of plasma, followed by conventional carbon in the subsequent extended off time - Carbon double bond polymerization (in the absence of any VUV-, ion- or electron-induced damage to the growth film). A very high degree of retention of the bulk structure can be achieved within the deposited nanolayer, whereby specific functional groups are obtained at the surface. In addition, the surface density of the desired chemical group can be controlled (i.e., adjusted) by a programmed pulsed plasma duty cycle. The functional film obtained is covalently attached to the underlying substrate via the free radical sites generated at the interface during the onset of plasma exposure. Other advantages include the fact that the plasma chemistry method is fast (single step), solvent free, high energy efficiency, and the reactive gaseous properties of the discharge are the entire substrate material and complex geometries (eg, microspheres, fibers, tubes, etc.) The subject provides shape retention. Any surface that depends on a particular functional group due to performance can in principle be effectively produced by the above-described pulsed plasma chemistry. Examples of past designs include: functionalization with anhydrides, carboxylic acids, amines, cyano groups, epoxides, hydroxyl groups, halides, thiols, mercapto groups, perfluoroalkyl groups, perfluoromethylene groups, and trifluoromethyl groups. The surface.
WO 2006/111711 A1闡述向基板施加含有芳香族雜環結構內所含之反應性氮官能基之塗層之方法,該方法包括使該基板經受具有該雜環氮官能基之單體之電漿放電。 WO 2006/111711 A1 describes a method of applying a coating comprising a reactive nitrogen functional group contained in an aromatic heterocyclic ring structure to a substrate, the method comprising subjecting the substrate to a plasma of a monomer having the heterocyclic nitrogen functional group. Discharge.
在實施例中,本發明方法之步驟(i)使用脈衝電漿沈積程序。 In an embodiment, step (i) of the method of the invention uses a pulsed plasma deposition procedure.
在實施例中,本發明方法之步驟(i)使用實質上連續波電漿沈積程序。 In an embodiment, step (i) of the method of the invention uses a substantially continuous wave plasma deposition procedure.
在實施例中,本發明方法之步驟(i)使用低平均功率電漿沈積程序。在實施例中,該程序以高達10 mW/cm3之功率密度發生。低平均功率電漿聚合可潛在地克服用於產生帶有含氮之芳香族雜環部分之表面之其他技術之限制。 In an embodiment, step (i) of the method of the invention uses a low average power plasma deposition procedure. In an embodiment, the procedure occurs at a power density of up to 10 mW/cm 3 . Low average power plasma polymerization can potentially overcome the limitations of other techniques for producing a surface with a nitrogen-containing aromatic heterocyclic moiety.
然而,鈀觸媒附接並不需要許多表面位點,此乃因無電鍍沈積製程係自動催化的,因此並非必須執行所沈積電漿 聚合物層之習用高結構保留標準,且無電鍍沈積製程亦可以較高平均功率工作。 However, palladium catalyst attachment does not require many surface sites, which is autocatalyzed by the electroless deposition process, so it is not necessary to perform the deposited plasma. The polymer layer is conventionally used with high structural retention criteria, and the electroless deposition process can also operate at higher average power.
在實施例中,步驟(i)包含使基板經受具有芳香族雜環氮官能基之單體之電漿放電。 In an embodiment, step (i) comprises subjecting the substrate to a plasma discharge of a monomer having an aromatic heterocyclic nitrogen functional group.
本發明方法之步驟(i)可使用具有至少一種照慣例可聚合之不飽和官能基之單體(例如選自丙烯酸酯、甲基丙烯酸酯、烯烴、苯乙烯、炔烴及/或其衍生物),該官能基實質上不同於基板表面處所期望之含氮之芳香族環結構(例如選自吡啶、吡咯、喹啉、異喹啉、嘌呤、嘧啶、吲哚及/或其衍生物)。適宜單體闡述於WO 2006/111711 A1中。在實施例中,含氮之芳香族環結構係衍生自吡啶。適宜單體之特定實例係乙烯基吡啶,例如,4-乙烯基吡啶:
在實施例中,含氮之芳香族雜環官能化塗層中之含氮之芳香族雜環基團係自吡啶衍生。 In an embodiment, the nitrogen-containing aromatic heterocyclic group in the nitrogen-containing aromatic heterocyclic functionalized coating is derived from pyridine.
本發明方法之步驟(i)可使用如WO 2006/111711 A1中所闡述之電漿聚合程序。 The step (i) of the process of the invention may use a plasma polymerization procedure as set forth in WO 2006/111711 A1.
本發明方法之步驟(i)可產生以具有含氮之芳香族雜環官能基之聚合物塗層完全塗覆之產物。或者,僅將含氮之芳香族雜環官能化聚合物塗層施加至基板之一或多個選擇表面域。該等圖案化基板之施加包括考慮空間控制(例如)表面可濕性之領域。含氮之芳香族雜環塗層於特定表面域之 限制可藉由WO 2006/111711 A1中所闡述之方法來達成。 Step (i) of the process of the invention produces a product which is completely coated with a polymer coating having a nitrogen-containing aromatic heterocyclic functional group. Alternatively, only the nitrogen-containing aromatic heterocyclic functionalized polymer coating is applied to one or more of the selected surface domains of the substrate. The application of the patterned substrates includes areas that consider spatial control, such as surface wettability. a nitrogen-containing aromatic heterocyclic coating on a specific surface domain The limitation can be achieved by the method described in WO 2006/111711 A1.
代替使用電漿沈積,向基板施加含氮之芳香族雜環官能化塗層之步驟(i)亦可藉由選自以下之技術來實施:例如,旋塗、溶劑澆鑄、UV誘發之接枝聚合及使用自組裝單層(SAM)。 Instead of using plasma deposition, the step (i) of applying a nitrogen-containing aromatic heterocyclic functionalized coating to the substrate can also be carried out by techniques selected from the group consisting of, for example, spin coating, solvent casting, UV-induced grafting. Polymerization and use of self-assembled monolayers (SAM).
在將含氮之芳香族雜環官能化塗層施加至基板之後,含氮之芳香族雜環基團於步驟(ii)中進一步錯合。 After the nitrogen-containing aromatic heterocyclic functionalized coating is applied to the substrate, the nitrogen-containing aromatic heterocyclic group is further mismatched in step (ii).
步驟(ii)涉及使含氮之芳香族雜環官能化塗層與包含鈀(II)及/或鉑(II)之試劑接觸,從而產生包含經錯合鈀(II)及/或鉑(II)之塗層。 Step (ii) involves contacting the nitrogen-containing aromatic heterocyclic functionalized coating with an agent comprising palladium (II) and/or platinum (II) to produce a mis-containing palladium (II) and/or platinum (II) ) coating.
鈀及/或鉑中心可經由電子孤對相互作用配位至諸如吡啶等含氮之雜環。WO 2006/111711 A1闡述如下方法:其中在將含氮之芳香族雜環官能化塗層施加至如上所述之表面之後,在使得金屬鹽與表面雜環基團錯合之條件下使表面與金屬鹽(例如氯化鈀)之溶液接觸。 The palladium and/or platinum centers can be coordinated via an electron lone pair interaction to a nitrogen-containing heterocycle such as pyridine. WO 2006/111711 A1 describes a process in which after applying a nitrogen-containing aromatic heterocyclic functionalized coating to the surface as described above, the surface is rendered such that the metal salt is mismatched with the surface heterocyclic group. A solution of a metal salt such as palladium chloride is contacted.
在實施例中,步驟(ii)中之包含鈀(II)及/或鉑(II)之試劑包含鈀(II)及/或鉑(II)之鹽。在實施例中,鈀(II)及/或鉑(II)之鹽係鈀(II)之鹽。在實施例中,鈀(II)之鹽係鹵化物,例如,氯化鈀。 In an embodiment, the reagent comprising palladium (II) and/or platinum (II) in step (ii) comprises a salt of palladium (II) and/or platinum (II). In the examples, the salt of palladium (II) and/or platinum (II) is a salt of palladium (II). In the examples, the salt of palladium (II) is a halide, for example, palladium chloride.
本發明方法之步驟(ii)可使用如WO 2006/111711 A1中所闡述之用於錯合氯化鈀與含氮之芳香族雜環官能化塗層之程序。 Step (ii) of the process of the invention may be carried out using a procedure for the mismatching of palladium chloride with a nitrogen-containing aromatic heterocyclic functionalized coating as set forth in WO 2006/111711 A1.
步驟(iii)涉及將塗層中之經錯合鈀(II)及/或鉑(II)還原成鈀(0)及/或鉑(0)。 Step (iii) involves reducing the mis-palladium (II) and/or platinum (II) in the coating to palladium (0) and/or platinum (0).
在實施例中,步驟(iii)中經錯合鈀(II)及/或鉑(II)至鈀(0)及/或鉑(0)之還原係在二甲基胺基硼烷(DMAB)存在下發生。 In an embodiment, the reduction of the palladium (II) and/or platinum (II) to palladium (0) and/or platinum (0) in step (iii) is in dimethylaminoborane (DMAB). Occurs in existence.
在實施例中,本發明方法之步驟(iii)需要藉由還原劑(例如,DMAB)將經錯合鈀(II)還原成鈀(0)。 In an embodiment, step (iii) of the process of the invention requires the reduction of the mis-palladium (II) to palladium (0) by a reducing agent (e.g., DMAB).
步驟(iv)涉及在還原劑存在及水性條件下使包含經錯合鈀(0)及/或鉑(0)之塗層與鋅鹽接觸以在基板上形成氧化鋅塗層。 Step (iv) involves contacting a coating comprising mis-palladium (0) and/or platinum (0) with a zinc salt in the presence of a reducing agent and aqueous conditions to form a zinc oxide coating on the substrate.
在實施例中,步驟(iv)中之鋅鹽係硝酸鋅。 In an embodiment, the zinc salt in step (iv) is zinc nitrate.
在實施例中,步驟(iv)中之還原劑係DMAB。 In an embodiment, the reducing agent in step (iv) is DMAB.
在實施例中,本發明方法之步驟(iii)及(iv)需要藉由DMAB將經錯合鈀(II)中心還原成鈀(0),隨後在鈀(0)中心存在下使硝酸鋅與DMAB反應。 In the examples, steps (iii) and (iv) of the process of the invention require reduction of the mis-palladium (II) center to palladium (0) by DMAB followed by zinc nitrate in the presence of palladium (0) center. DMAB reaction.
在實施例中,本發明方法之步驟(iii)及(iv)以一罐式反應一起發生。在實施例中,在步驟(iii)中將塗層中之經錯合鈀(II)及/或鉑(II)還原成鈀(0)及/或鉑(0)之還原劑亦可在步驟(iv)中用作還原劑。 In the examples, steps (iii) and (iv) of the process of the invention occur together in a one-pot reaction. In an embodiment, reducing the palladium (II) and/or platinum (II) in the coating to palladium (0) and/or platinum (0) in step (iii) may also be carried out in the step. Used as a reducing agent in (iv).
在實施例中,本發明方法之步驟(iii)及(iv)需要藉由DMAB將經錯合鈀(II)中心原位還原成鈀(0),隨後直接在所得鈀(0)中心存在下使硝酸鋅與DMAB反應。 In the examples, steps (iii) and (iv) of the process of the invention require in situ reduction of the mis-palladium (II) center to palladium (0) by DMAB, followed directly in the presence of the resulting palladium (0) center. The zinc nitrate is reacted with DMAB.
本發明之第二態樣提供可藉由第一態樣之方法獲得或已使用其產生之氧化鋅塗層。 A second aspect of the invention provides a zinc oxide coating that can be obtained by the method of the first aspect or that has been produced using it.
在實施例中,氧化鋅塗層係抗菌塗層。 In an embodiment, the zinc oxide coating is an antimicrobial coating.
在實施例中,氧化鋅塗層用於UV保護中。 In an embodiment, a zinc oxide coating is used in UV protection.
本發明之第三態樣提供包含基板及第二態樣之氧化鋅塗層之裝置。 A third aspect of the invention provides a device comprising a substrate and a second aspect of a zinc oxide coating.
在實施例中,裝置係醫用敷料。 In an embodiment, the device is a medical dressing.
在實施例中,裝置係薄膜電晶體。 In an embodiment, the device is a thin film transistor.
在實施例中,裝置係染料敏化太陽能電池。 In an embodiment, the device is a dye sensitized solar cell.
在實施例中,裝置係動能收割機。 In an embodiment, the device is a kinetic energy harvester.
在實施例中,裝置係電極。在實施例中,裝置係(例如)液晶顯示器中之透明電極。 In an embodiment, the device is an electrode. In an embodiment, the device is, for example, a transparent electrode in a liquid crystal display.
貫穿本說明書之說明及申請專利範圍,詞語「包含(comprise)」及「含有(contain)」及該等詞語之變化形式(例如「包含(comprising及comprises)」)意指「包括但不限於」,且並非將其他部分、添加物、組份、整數或步驟排除在外。此外,除非上下文另有需要,否則單數均涵蓋複數:具體而言,除非上下文另有需要,否則倘若使用不定冠詞,則均應將本說明書理解為涵蓋複數形式以及單數形式。 Throughout the description of the specification and the scope of the patent application, the words "comprise" and "contain" and variations of the words (such as "comprising and comprises") mean "including but not limited to" And does not exclude other parts, additions, components, integers or steps. In addition, the singular encompasses the singular and the singular and the singular and the singular.
本發明每一態樣之較佳特徵可如結合其他態樣中之任一者所闡述。自以下實例將明瞭本發明之其他特徵。一般而言,本發明延伸至本說明書(包括任何隨附申請專利範圍及附圖)中所揭示特徵之任一新穎特徵或任一新穎特徵組合。因此,結合本發明之特定態樣、實施例或實例所闡述之特徵、整數、特性、化合物、化學部分或基團均應理解為可應用於本文中所闡述之任何其他態樣、實施例或實例,除非與其不相容。此外,除非另有所述,否則本文所 揭示之任何特徵可由用於相同或類似目的之替代特徵來代替。 Preferred features of each aspect of the invention may be as described in connection with any of the other aspects. Other features of the invention will be apparent from the examples which follow. In general, the invention extends to any novel feature or combination of novel features disclosed in the specification, including any accompanying claims and drawings. Thus, features, integers, characteristics, compounds, chemical moieties or groups that are described in connection with the specific aspects, examples, or examples of the invention are to be construed as being applicable to any other aspects, embodiments or embodiments set forth herein. Examples, unless they are incompatible. In addition, unless otherwise stated, this article Any feature disclosed may be replaced by alternative features for the same or similar purpose.
倘若引述上限及下限用於性質(例如組份之濃度或溫度),則亦可暗示由任一上限與任一下限之組合所界定值之範圍。 If the upper and lower limits are used for the nature (such as the concentration or temperature of the component), the range of values defined by any combination of any of the upper and the lower limits may also be implied.
在本說明書中,除非另有所述,否則性質(例如膜厚度、接觸角及諸如此類)係指在環境條件下(即在大氣壓及18℃至25℃之溫度(例如約20℃)下)所量測之性質。 In the present specification, unless otherwise stated, properties (eg, film thickness, contact angle, and the like) refer to under ambient conditions (ie, at atmospheric pressure and at a temperature of from 18 ° C to 25 ° C (eg, about 20 ° C)) The nature of the measurement.
現在,將參考以下非限制性實例及附圖來進一步闡述本發明之實施例,其中:實施實驗來闡釋本發明實施例。 Embodiments of the invention will now be further elucidated with reference to the following non-limiting examples and the accompanying drawings in which: FIG.
使用分光光度計(nkd-6000,Aquila Instruments有限公司)來實施膜厚度量測。使用修改之Levenberg-Marquardt方法將跨越300-1000 nm波長範圍之透射率及反射率曲線擬合為電介質之柯西模型(Cauchy model)。脈衝電漿聚(4-乙烯基吡啶)沈積速率經量測為15±2 nm min-1。 Film thickness measurements were performed using a spectrophotometer (nkd-6000, Aquila Instruments Co., Ltd.). The transmittance and reflectance curves across the 300-1000 nm wavelength range were fitted to the Cauchy model of the dielectric using the modified Levenberg-Marquardt method. The pulsed plasma poly(4-vinylpyridine) deposition rate was measured to be 15 ± 2 nm min -1 .
使用配備有非單色化Mg-Kα X射線源(1253.6 eV)及以恆定分析儀能量模式(通能=20 eV)操作之同心半球分析儀之VG Escalab光譜儀來對官能化基板實施X射線光電子光譜(XPS)表徵,其中以與基板法線呈12°之掠出角收集光電子。使用源自化學標準之靈敏度因子計算元素組成:C(1s):O(1s):N(1s):Pd(3d):Zn(2p)等於1.00:0.36: 0.57:0.05:0.05。所有結合能皆以285.0 eV處之C(1s)烴峰為基準。將核心能階光譜擬合至線性背景。 X-ray photoelectrons were applied to the functionalized substrate using a VG Escalab spectrometer equipped with a non-monochromated Mg-Kα X-ray source (1253.6 eV) and a concentric hemisphere analyzer operating in a constant analyzer energy mode (pass energy = 20 eV) Spectral (XPS) characterization in which photoelectrons were collected at a sweep angle of 12° to the substrate normal. The elemental composition is calculated using a sensitivity factor derived from a chemical standard: C(1s): O(1s): N(1s): Pd(3d): Zn(2p) is equal to 1.00:0.36: 0.57: 0.05: 0.05. All binding energies are based on the C(1s) hydrocarbon peak at 285.0 eV. The core energy level spectrum is fitted to a linear background.
使用配備有液氮冷卻型MCT檢測器之Perkin-Elmer Spectrum One光譜儀)對所沈積膜進行傅立葉轉換紅外(Fourier transform infrared,FTIR)分析。反射-吸收(RAIRS)量測利用裝配有KRS-5偏光器且設定為66°之角度可變式配件(Specac有限公司)來移除s偏光的組份。經128次解析度為4 cm-1之掃描對所有光譜求平均值。 The deposited film was subjected to Fourier transform infrared (FTIR) analysis using a Perkin-Elmer Spectrum One spectrometer equipped with a liquid nitrogen cooled MCT detector. Reflection-Absorption (RAIRS) Measurements The components of the s-polarized light were removed using an angular variable fitting (Specac Co., Ltd.) equipped with a KRS-5 polarizer and set to 66°. All spectra were averaged over 128 scans with a resolution of 4 cm -1 .
藉由盧瑟福(Rutherford)反向散射技術使用4He+離子束(5SDH珠鏈式靜電加速器(5SDH Pelletron Accelerator))來進行深度剖析量測。使用PIPS檢測器以19 keV解析度檢測反向散射4He+離子。 Depth profiling measurements were performed by a Rutherford backscatter technique using a 4 He + ion beam (5SDH Pelletron Accelerator). Backscatter 4 He + ions were detected at a resolution of 19 keV using a PIPS detector.
使用配備有Cu管(1.5418 Å波長)之粉末繞射儀(Bruker d8)及線性位置靈敏檢測器(帶有Ni過濾器之Lynx Eye)來收集無電鍍沈積之氧化鋅層(1 μm厚,安裝於矽(100)基板上)之X射線繞射圖案。以0.02°之步長收集自5° 2θ至65° 2θ之數據。 A zinc oxide layer (1 μm thick, mounted with electroless deposition) was collected using a powder diffractometer (Bruker d8) equipped with a Cu tube (1.5418 Å wavelength) and a linear position sensitive detector (Lynx Eye with Ni filter) An X-ray diffraction pattern on a (100) substrate. Data from 5° 2θ to 65° 2θ were collected in steps of 0.02°.
用裝配有×50放大透鏡之光學顯微鏡(Olympus BX40)使無電鍍沈積之氧化鋅層成像。 The electrolessly deposited zinc oxide layer was imaged using an optical microscope (Olympus BX40) equipped with a x50 magnifying lens.
對於光化學研究而言,以30 cm之焦距將來自以100 W運行之低壓Hg-Xe弧光燈(Oriel公司,6136型,發射240-600 nm區域內之強線譜)之紫外光聚焦於所沈積氧化鋅膜上。 For photochemical studies, UV light from a low-pressure Hg-Xe arc lamp (Oriel, Model 6136, emitting a strong line spectrum in the 240-600 nm region) operating at 100 W was focused at a focal length of 30 cm. Deposited on the zinc oxide film.
使用一對噴塗於氧化鋅膜上之平行銀電極(長6 mm且隔開1 mm)來實施導電率量測,該氧化鋅膜已沈積於非導電 玻璃基板上。發現氧化鋅膜之導電特徵在UV暴露之前及之後均為歐姆型(0-200 V範圍)。在UV反應曲線之情形下,施加10 V之恆定電壓,並用Keithley 2400源表量測電流。 Conductivity measurements were performed using a pair of parallel silver electrodes (length 6 mm and 1 mm apart) sprayed onto a zinc oxide film that had been deposited on a non-conductive On the glass substrate. The conductive features of the zinc oxide film were found to be ohmic (0-200 V range) before and after UV exposure. In the case of the UV response curve, a constant voltage of 10 V was applied and the current was measured using a Keithley 2400 source meter.
在環境溫度下組合使用視訊捕捉裝置與分配2 μL液滴大小之電動注射器(VCA2500XE,A.S.T.Products公司)來實施懸滴水接觸角量測。採用高純水(1級B.S.3978)作為探針液體。 Hanging drip contact angle measurements were performed using a video capture device in combination with a 2 μL droplet size electric syringe (VCA2500XE, A.S.T.Products) at ambient temperature. High purity water (Grade 1 B.S. 3978) was used as the probe liquid.
根據修改形式之日本工業標準協議(Japanese Industrial Standard Protocol)來實施抗菌測試。將生長至A650nm為0.4之細菌細胞培養物(野生型大腸桿菌(Escherichia coli)K-12實驗室菌株W3110)於低鹽緩衝液中施加至經氧化鋅塗覆之聚丙烯不織布及未經塗覆之對照上。在潮濕黑暗環境中於37℃下將試樣培育24 h。將過量培養物及布轉移至2 ml離心管並以9000 rpm離心2 min以使回收率最大化。將所回收培養物渦旋處理以再懸浮細胞;實施十倍稀釋並將其點於LB瓊脂上。在30℃下將各板培育過夜,之後對純係數進行計數。為控制於試樣上之細胞吸收,利用暴露1 min之細菌在經塗覆及未經塗覆之布上重複上述程序。 The antibacterial test was carried out according to the modified Japanese Industrial Standard Protocol. A bacterial cell culture (wild type Escherichia coli K-12 laboratory strain W3110) grown to A 650 nm of 0.4 was applied to a zinc oxide coated polypropylene nonwoven fabric and uncoated in a low salt buffer. Overlaid on the control. The samples were incubated for 24 h at 37 ° C in a humid dark environment. The excess culture and cloth were transferred to a 2 ml centrifuge tube and centrifuged at 9000 rpm for 2 min to maximize recovery. The recovered culture was vortexed to resuspend the cells; a ten-fold dilution was performed and spotted on LB agar. The plates were incubated overnight at 30 ° C, after which the pure coefficients were counted. To control cell uptake on the sample, the above procedure was repeated on coated and uncoated cloth using bacteria exposed for 1 min.
在圓柱形玻璃反應器(4.5 cm直徑,500 cm3體積,1×10-3毫巴基礎壓力,滲漏率好於1.7×10-9 mol s-1)中進行脈衝電漿化學沈積。經由L-C匹配單元將纏繞在反應器周圍之銅線圈(4 mm直徑,10轉)附接至13.56 MHz射頻(RF)電 源。將整個裝置封閉於法拉第籠(Faraday cage)中。使用附接至液氮冷阱之30 L min-1旋轉幫浦將室抽真空,且用派藍尼真空計(Pirani gauge)監測系統壓力。使用脈衝信號生成器來觸發RF功率生成器且使用示波器來監測脈衝形狀。在沈積之前,藉由用清潔劑擦洗、在丙酮中沖洗、爐乾燥且然後將40 W連續波空氣電漿運行30 min來清潔玻璃反應器。接下來,將矽(100)晶圓(Silicon Valley Microelectronics公司)、玻璃蓋玻片(VWR International有限公司)或聚丙烯不織布碎片(Corovin GmbH)插入至室中,並將系統抽回降至基礎壓力。在此階段,在0.2毫巴之壓力下用4-乙烯基吡啶前體(+95%,Sigma-Aldrich,用三個冷凍幫浦-解凍循環進一步純化)將反應器吹掃5 min,隨後放電點火。對於吡啶環保留而言,最佳工作循環為:接通時段=100 μs且斷開時段=4 ms,以及峰值功率=40 W。在沈積完成之後,使前體繼續流動穿過系統再達5 min以便淬滅所沈積膜內所含之任何捕獲之反應性位點。 Pulsed plasma chemical deposition was carried out in a cylindrical glass reactor (4.5 cm diameter, 500 cm 3 volume, 1 x 10 -3 mbar base pressure, and a leak rate better than 1.7 x 10 -9 mol s -1 ). A copper coil (4 mm diameter, 10 revolutions) wound around the reactor was attached to a 13.56 MHz radio frequency (RF) power source via an LC matching unit. The entire device was enclosed in a Faraday cage. The chamber was evacuated using a 30 L min -1 rotary pump attached to a liquid nitrogen cold trap and the system pressure was monitored using a Pirani gauge. A pulse signal generator is used to trigger the RF power generator and an oscilloscope is used to monitor the pulse shape. Prior to deposition, the glass reactor was cleaned by scrubbing with detergent, rinsing in acetone, oven drying and then running 40 W continuous wave air plasma for 30 min. Next, insert 矽100 wafer (Silicon Valley Microelectronics), glass coverslip (VWR International) or polypropylene non-woven fabric (Corovin GmbH) into the chamber and pump the system back to the base pressure . At this stage, the reactor was purged with a 4-vinylpyridine precursor (+95%, Sigma-Aldrich, further purified with three refrigerated pump-thaw cycles) at a pressure of 0.2 mbar for 5 min followed by discharge ignition. For pyridine ring retention, the optimal duty cycle is: on-time = 100 μs and off-time = 4 ms, and peak power = 40 W. After the deposition is complete, the precursor is allowed to continue to flow through the system for an additional 5 minutes to quench any captured reactive sites contained within the deposited film.
然後,將聚(4-乙烯基吡啶)官能化之表面浸沒於含有2 μM氯化鈀(II)(+99.999%,Alfa Aesar)、3.0 M氯化鈉(+99.5%,Sigma)及0.5 M去水檸檬酸鈉(+99%,Aldrich)之觸媒水溶液(已用單水檸檬酸(+99%,Aldrich)將其調節至pH 4.5)中達12 h,且隨後在去離子水中洗滌。 The poly(4-vinylpyridine) functionalized surface was then immersed in 2 μM palladium(II) chloride (+99.999%, Alfa Aesar), 3.0 M sodium chloride (+99.5%, Sigma) and 0.5 M. Aqueous sodium citrate (+99%, Aldrich) aqueous solution (which has been adjusted to pH 4.5 with citric acid monohydrate (+99%, Aldrich) for 12 h, and subsequently washed in deionized water.
接下來,在323 K之溫度下,將經氯化鈀(II)固定之表面置於含有0.05 M硝酸鋅(+98%,Sigma-Aldrich)及0.05 M二甲基胺基硼烷(+97%,Sigma-Aldrich)之水性化學浴中達2 h。在氧化鋅生長之後,用去離子水沖洗表面。 Next, the surface fixed with palladium chloride (II) was placed at a temperature of 323 K to contain 0.05 M zinc nitrate (+98%, Sigma-Aldrich) and 0.05 M dimethylamino borane (+97). %, Sigma-Aldrich) in an aqueous chemical bath up to 2 h. After the zinc oxide is grown, the surface is rinsed with deionized water.
脈衝電漿沈積之聚(4-乙烯基吡啶)層之XPS表徵證實,表面處僅存在碳及氮,且始終未展示來自下伏矽基板之Si(2p)信號,參見表1。此外亦發現,針對前體(理論上)及脈衝電漿沈積之聚(4-乙烯基吡啶)膜所計算之原子百分比之間存在良好相關性,此與高程度之結構保留一致。浸沒至氯化鈀(II)溶液中引起分別於338.3 eV及343.5 eV處之Pd(3d5/2)及Pd(3d3/2)信號以及於198.8 eV處之Cl(2p)峰之出現。此可指示PdCl2錯合至聚(4-乙烯基吡啶)表面(532.7 eV處存在O(1s)峰係歸因於自氯化鈀(II)水溶液之水吸收),參見圖1及圖2。 XPS characterization of the pulsed plasma deposited poly(4-vinylpyridine) layer confirmed the presence of only carbon and nitrogen at the surface, and the Si(2p) signal from the underlying ruthenium substrate was never shown, see Table 1. It has also been found that there is a good correlation between the atomic percentages calculated for the precursor (theoretical) and the pulsed plasma deposited poly(4-vinylpyridine) film, which is consistent with a high degree of structural retention. Immersion into a palladium chloride (II) solution caused the appearance of Pd (3d 5/2 ) and Pd (3d 3/2 ) signals at 338.3 eV and 343.5 eV, respectively, and the Cl (2p) peak at 198.8 eV. This may indicate that PdCl 2 is mismatched to the poly(4-vinylpyridine) surface (the O(1s) peak at 532.7 eV is attributed to the water absorption from the aqueous palladium chloride (II) solution), see Figure 1 and Figure 2 .
對於4-乙烯基吡啶單體而言,可作出以下紅外譜帶分配:乙烯基C=C伸縮(1634 cm-1)、芳香族扇形C=C伸縮(1597 cm-1及1548 cm-1)、芳香族半圓C=C及C=N伸縮(分別1495 cm-1及1409 cm-1)及=CH2搖擺(927 cm-1),參見圖3。脈衝電漿沈積之後,除乙烯基碳-碳雙鍵特徵(其在聚合期間消失)以外,所有該等譜帶皆可辨別。此符合與脈衝電漿沈積有關之高結構保留程度。 For 4-vinylpyridine monomers, the following infrared band assignments can be made: vinyl C=C stretching (1634 cm -1 ), aromatic sector C=C stretching (1597 cm -1 and 1548 cm -1 ) , aromatic semicircle C=C and C=N stretching (1495 cm -1 and 1409 cm -1 , respectively ) and =CH 2 sway (927 cm -1 ), see Figure 3. After the pulsed plasma deposition, all of these bands were discernible except for the vinyl carbon-carbon double bond characteristics which disappeared during polymerization. This is consistent with the high degree of structural retention associated with pulsed plasma deposition.
未經氯化鈀(II)加晶種之脈衝電漿沈積之聚(4-乙烯基吡啶)之對照試樣致使不存在無電鍍氧化鋅生長,此突顯經固定鈀觸媒之關鍵作用。與之相比,對於經鈀觸媒加晶種之脈衝電漿沈積之聚(4-乙烯基吡啶)膜而言,氧化鋅膜對肉眼清晰可見。藉由XPS僅可檢測到鋅、氧及痕量之碳(由於大氣吸附),參見圖2及表1。不存在N(1s)及Pd(3d)信號證實,經觸媒加晶種之聚(4-乙烯基吡啶)層被氧化鋅完全覆蓋。離子束分析測定氧化鋅膜生長速率為230±20 nmh-1。 A control sample of poly(4-vinylpyridine) without pulsed plasma deposition of palladium (II) chloride seeded resulted in the absence of electroless zinc oxide growth, which highlights the critical role of immobilized palladium catalyst. In contrast, for a poly(4-vinylpyridine) film which is pulsed plasma deposited by palladium catalyst seeding, the zinc oxide film is clearly visible to the naked eye. Only zinc, oxygen and traces of carbon (due to atmospheric adsorption) can be detected by XPS, see Figure 2 and Table 1. The absence of N(1s) and Pd(3d) signals confirmed that the catalytically seeded poly(4-vinylpyridine) layer was completely covered by zinc oxide. The growth rate of zinc oxide film was determined by ion beam analysis to be 230±20 nmh -1 .
X射線繞射表徵展示31.9°、34.5°、36.3°、47.6°、56.6°及62.9°處之峰,該等峰與纖鋅礦結構(六方密積)中之氧化鋅一致,參見圖4。裏特沃爾德精修(Rietveld refinement)證實,峰強度之比率與對纖鋅礦氧化鋅之預期匹配。因此,膜為多晶形且隨機定向。粉末繞射圖案所量測之峰寬表明最小微晶大小為25 nm;但眾多其他參數(包括晶格應變)亦可係影響因子。 The X-ray diffraction characterization shows peaks at 31.9°, 34.5°, 36.3°, 47.6°, 56.6°, and 62.9°, which are consistent with zinc oxide in the wurtzite structure (hexagonal dense), see Figure 4. Rietveld refinement confirmed that the ratio of peak intensities matched the expectations for wurtzite zinc oxide. Thus, the film is polymorphic and randomly oriented. The peak width measured by the powder diffraction pattern indicates that the minimum crystallite size is 25 nm; however, many other parameters, including lattice strain, can also be the influence factor.
光學顯微鏡展示對應於不同結晶面之粗糙化表面,參見圖5。 Optical microscopy shows roughened surfaces corresponding to different crystal faces, see Figure 5.
在UV輻照期間,沈積於平坦非導電玻璃碎片上之氧化鋅膜呈現顯著導電率增加,其自10-7 mS cm-1之暗導電率值升高至750 s之後之最高1.5 mS cm-1,參見圖6。觀察到,導電率在終止UV暴露之後緩慢衰減。在超高真空(壓力<10-8毫巴)下儲存之情形下,在數週之時段之後保持光導電性,同時真空下之UV輻照引起導電率增加。 During UV irradiation, the zinc oxide film deposited on the flat non-conductive glass flakes exhibits a significant increase in conductivity, which increases from a dark conductivity value of 10 -7 mS cm -1 to a maximum of 1.5 mS cm after 750 s - 1. See Figure 6. It was observed that the conductivity slowly decayed after terminating the UV exposure. In the case of storage under ultra-high vacuum (pressure <10 -8 mbar), photoconductivity is maintained after a period of several weeks, while UV irradiation under vacuum causes an increase in conductivity.
經量測,經氧化鋅塗覆之平坦矽基板具有150°之高水接觸角值,但具有大的接觸角滯後,參見表2。該等表面於空氣中UV輻射之暴露造成歸因於表面親水性之平衡水接觸角顯著下降,參見表2及圖6。經相同時間段於更高強度UV光之暴露使得接觸角下降至20°以下。在終止UV暴露之後,經大約3週之時段接觸角緩慢恢復至其150°之初始值,圖6。然而,當該等經氧化鋅塗覆之矽晶圓(其已在空氣中暴露於UV)儲存於超高真空條件(<10-8毫巴)下時,接觸角並不恢復(即經4週之時段保持於60°下)。另外,經氧化鋅塗覆之試樣於超高真空條件或純O2(而非於空氣中)下之UV輻照未產生可辨別之接觸角變化(即保持於150°下)。該等對照實驗突顯,UV暴露期間之接觸角衰減及終止UV之後之隨後疏水性恢復涉及與空氣之表面反應。對應於少量經吸附烴物質(285.0 eV)之XPSC(1s)包絡並未改變,參見圖7。 The flat zinc substrate coated with zinc oxide has a high water contact angle value of 150°, but has a large contact angle hysteresis, see Table 2. The exposure of these surfaces to UV radiation in the air caused a significant drop in the equilibrium water contact angle due to surface hydrophilicity, see Table 2 and Figure 6. Exposure to higher intensity UV light over the same period of time causes the contact angle to drop below 20°. After the UV exposure was terminated, the contact angle slowly recovered to its initial value of 150° over a period of about 3 weeks, Figure 6. However, when the zinc oxide coated tantalum wafers (which have been exposed to UV in air) are stored under ultra-high vacuum conditions (<10 -8 mbar), the contact angle does not recover (ie, via 4) The period of the week is kept at 60°). In addition, UV irradiation of the zinc oxide coated sample under ultra-high vacuum conditions or pure O 2 (instead of air) did not produce a discernable change in contact angle (i.e., maintained at 150°). These control experiments highlight that contact angle decay during UV exposure and subsequent hydrophobic recovery after termination of UV involves reaction with the surface of the air. The XPSC (1s) envelope corresponding to a small amount of adsorbed hydrocarbon material (285.0 eV) did not change, see Figure 7.
氧化鋅於經脈衝電漿聚(4-乙烯基吡啶)塗覆之非織造聚丙烯基板上之無電鍍生長造成超疏水(高平衡水接觸角,超過150°,組合低接觸角滯後),參見表2。在此情形下, 並未發現因暴露於UV輻射而干擾氧化鋅表面之斥水性,參見表2。 Electroless plating of zinc oxide on a pulsed plasma poly(4-vinylpyridine) coated nonwoven polypropylene substrate results in superhydrophobicity (high equilibrium water contact angle, over 150°, combined low contact angle hysteresis), see Table 2. In this case, The water repellency of the zinc oxide surface was not found to be affected by exposure to UV radiation, see Table 2.
經氧化鋅塗覆之聚丙烯布碎片亦顯示對革蘭氏(Gram)陰性細菌(大腸桿菌)具有顯著抗菌活性(log殺滅高達2.9),參見表3。聚丙烯布碎片之對照試樣不展現抗菌活性,然而在暴露於經脈衝電漿聚(4-乙烯基吡啶)塗覆之布之後,觀察到僅log 0.2之降低。此小的下降可歸因於細胞於親水層上之吸收(而非殺滅),此乃因在1 min培育時段(與24 h對照)之後獲得類似結果。 The zinc oxide coated polypropylene cloth fragments also showed significant antibacterial activity against Gram negative bacteria (E. coli) (log kills up to 2.9), see Table 3. The control sample of the polypropylene cloth fragments did not exhibit antibacterial activity, however, after exposure to the pulsed plasma poly(4-vinylpyridine) coated cloth, only a decrease in log 0.2 was observed. This small decrease can be attributed to the absorption (rather than killing) of the cells on the hydrophilic layer, as similar results were obtained after 1 min incubation period (compared to 24 h control).
在該等實驗中,XPS及紅外分析展示,可用結構上經良好界定之聚(4-乙烯基吡啶)層來塗覆各種基板(與衍生自4-乙烯基吡啶之早期高功率連續波電漿聚合物形成顯著對比)。隨後用催化鈀中心加晶種可使氧化鋅局部無電鍍生長。此方法之另一益處為官能聚合物奈米層可用以保護下伏基板材料免受隨後化學處理步驟影響,例如,氧化及還原氧化鋅無電鍍沈積溶液內所含之試劑。 In these experiments, XPS and infrared analysis showed that a well-defined poly(4-vinylpyridine) layer could be used to coat various substrates (with early high-power continuous wave plasma derived from 4-vinylpyridine) The polymer formed a significant contrast). Subsequently, the zinc oxide is seeded with a catalytic palladium center to locally electrolessly grow zinc oxide. Another benefit of this method is that the functional polymer nanolayer can be used to protect the underlying substrate material from subsequent chemical processing steps, such as oxidizing and reducing the reagents contained in the zinc oxide electroless deposition solution.
氧化鋅之半導電性質源於呈單獨帶電之間隙鋅陽離子(Zn+)形式之天然摻雜(n型),該等鋅陽離子接近導電帶, 且因此可易於熱離子化(成Zn2++e),由此將電子供應至導電帶。留下間隙Zn+之上述過量電子可由吸附氧(O2(ads))捕獲於表面處從而得到O2 - (ads)物質。經氧化鋅塗覆之脈衝電漿聚(4-乙烯基吡啶)膜在UV光暴露期間顯示光導電性,參見圖6。對光導電性曲線形狀之貢獻可分為快速可逆(自價帶至導電帶之電子激發)及緩慢不可逆(經吸附物質之表面化學)。此外,當氧化鋅暴露於能量大於或等於其帶隙(3.3 eV)之UV光子輻射時,自價帶至導電帶之電子激發使得形成電子-電洞對。該等電子亦可由物理吸附氧捕獲於表面處,從而由於表面處O2 - (ads)間之靜電排斥而形成高達O2 - (ads)之自限濃度之經化學吸附O2 - (ads)。該等O2 - (ads)物質能夠自本體吸引電洞,該等電洞遷移朝向表面以與O2 - (ads)物質組合,從而使得形成表面空位及分子氧之光脫附:ZnO+hv → ZnO+e-h(電子-電洞對) The semiconducting properties of zinc oxide result from the natural doping (n-type) in the form of separately charged interstitial zinc cations (Zn + ), which are close to the conduction band and thus can be easily ionized (formed as Zn 2+ +) e) thereby supplying electrons to the conductive strip. The above excess electrons leaving the gap Zn + can be trapped at the surface by adsorbed oxygen (O 2 (ads) ) to obtain an O 2 - (ads) substance. The zinc oxide coated pulsed plasma poly(4-vinylpyridine) film exhibited photoconductivity during UV light exposure, see Figure 6. The contribution to the shape of the photoconductivity curve can be divided into fast reversible (electron excitation from the valence band to the conduction band) and slow irreversibility (surface chemistry of the adsorbed species). In addition, when zinc oxide is exposed to UV photon radiation having an energy greater than or equal to its band gap (3.3 eV), electron excitation from the valence band to the conductive band causes an electron-hole pair to form. The electrons may also be trapped at the surface by physically adsorbed oxygen, thereby forming a self-limiting concentration of chemisorbed O 2 - (ads) up to O 2 - (ads) due to electrostatic repulsion between O 2 - (ads) at the surface. . The O 2 - (ads) substances are capable of attracting holes from the body, and the holes migrate toward the surface to combine with the O 2 - (ads) substance, thereby causing surface vacancies and molecular oxygen light desorption: ZnO + hv → ZnO+eh (electron-hole pair)
e+O2(ads) → O2 - (ads) e+O 2(ads) → O 2 - (ads)
h+O2 - (ads) → O2(g)↑+□ h+O 2 - (ads) → O 2(g) ↑+□
在經由脫附自表面損失分子氧之後,UV輻照期間自價帶至導電帶所激發之其他電子不再能夠由吸附氧捕獲,且反而促成導電性。相反,舉例而言,在終止光脫附後氧於表面上之再吸附導致導電率衰減,參見圖6。因此,在氧化鋅膜之情形下,由於所沈積材料之固有高表面積,故氧脫附過程與再吸附過程間之平衡之偏移將支配光導電率升高及衰減曲線之形狀。在真空下儲存之情形下,在終止 UV輻照之後,光導電性保持數週之時段,此與由分子氧吸附所支配之導電率衰減機制一致。 After the molecular oxygen is lost from the surface via desorption, other electrons excited by the valence band to the conductive band during UV irradiation can no longer be captured by the adsorbed oxygen, and instead contribute to conductivity. Conversely, for example, re-adsorption of oxygen on the surface after termination of photodesorption results in a decay in conductivity, see Figure 6. Thus, in the case of a zinc oxide film, due to the inherently high surface area of the deposited material, the shift in equilibrium between the oxygen desorption process and the re-adsorption process will dominate the shape of the photoconductivity increase and decay curve. In the case of storage under vacuum, at the end After UV irradiation, the photoconductivity is maintained for a period of several weeks, which is consistent with the conductivity decay mechanism governed by molecular oxygen adsorption.
在UV輻照經氧化鋅塗覆之平坦基板之後亦觀察到可逆可濕性。清潔的氧化鋅表面親水(平衡水接觸角<35°,連同許多其他金屬氧化物),但在環境條件中,已知該等清潔的氧化鋅表面吸引存於大氣中之兩親性含碳污染物。該等吸附物質(adspecie)如表面活性劑起作用,朝向氧化鋅表面吸引親水結構域(經由與氧化鋅表面處之電子空乏層之電子孤對相互作用結合);因此,含碳物質之疏水結構域負責環境條件中廣泛觀察到之氧化鋅表面之疏水性。文獻中就UV誘發之氧化鋅表面親水性轉變提出兩種機制:第一,UV光在氧化鋅表面處誘發光催化反應,從而使得移除碳污染物(如在二氧化鈦自清潔表面之情形下);或第二,UV光使得分子氧自氧化鋅表面脫附,隨後解離水吸附。氧化鋅表面之碳:氧:鋅XPS元素比及C(1s)包絡形狀在UV輻照之前及之後無變化表明,第一機制不可能係主要因子,參見表1及圖7。O2(g)自氧化鋅表面之光脫附造成空位,該等空位可容許水分子(存於環境空氣中)吸附。在UV暴露期間需要存在水(如藉由對照實驗所證明,其中對於於超高真空或純氧下進行UV輻照且隨後暴露於空氣之氧化鋅表面而言,其接觸角未下降,參見表2)指示光輔助型解離水吸附機制,參見圖2。其中光生成之氫氧化物基團負責自疏水至親水之表面轉變。在UV輻照消失之後經幾週接觸角完全恢復(確切持續時間端視UV強度而定),參 見圖6。對於當在空氣中UV輻照氧化鋅(在平坦基板上)且然後將其儲存於超高真空下達延長之時間段時而言,支撐可逆表面潤濕特徵返向疏水性恢復之氧再吸附過程之驗證係藉由觀察接觸角增加之缺乏來達成。因此,在空氣中,在光輻照期間吸附於表面處之水經一段時間以熱力學方式由氧物質替代。發生此替代(使得再帶有疏水性)之速度緩慢,且確定針對氧化鋅觀察到之疏水性恢復時間較長。由於慢得多的氧脫附及再吸附表面化學過程,針對空氣中之UV暴露所觀察到之此光化學接觸角衰減及隨後之逆轉未展示與快速(純電子)本體電子光電導過程之相關性,參見圖8。 Reversible wettability was also observed after UV irradiation of a flat substrate coated with zinc oxide. The cleaned zinc oxide surface is hydrophilic (balanced water contact angle <35°, along with many other metal oxides), but in environmental conditions, such clean zinc oxide surfaces are known to attract amphiphilic carbonaceous contamination in the atmosphere. Things. The adsorbents, such as surfactants, act to attract a hydrophilic domain toward the surface of the zinc oxide (via an electron lone pair interaction with an electron depletion layer at the surface of the zinc oxide); thus, a hydrophobic structure of the carbonaceous material The domain is responsible for the hydrophobicity of the zinc oxide surface that is widely observed in environmental conditions. In the literature, two mechanisms are proposed for the UV-induced zinc oxide surface hydrophilic transition: First, UV light induces a photocatalytic reaction at the zinc oxide surface, thereby removing carbon contaminants (as in the case of titanium dioxide self-cleaning surfaces) Or second, UV light causes molecular oxygen to desorb from the surface of the zinc oxide, followed by dissociation of water adsorption. The carbon of the zinc oxide surface: oxygen: zinc XPS element ratio and C (1s) envelope shape did not change before and after UV irradiation, indicating that the first mechanism is impossible to be the main factor, see Table 1 and Figure 7. O 2 (g) light desorption from the surface of the zinc oxide causes vacancies that allow water molecules (stored in ambient air) to adsorb. The presence of water is required during UV exposure (as evidenced by controlled experiments where the contact angle is not reduced for UV-irradiated and ultra-high vacuum or zinc oxide surfaces exposed to air, see table 2) Indicate the light-assisted dissociation water adsorption mechanism, see Figure 2. The photogenerated hydroxide group is responsible for the surface transition from hydrophobic to hydrophilic. After a period of several weeks, the contact angle is fully recovered after the disappearance of UV radiation (the exact duration depends on the UV intensity), see Figure 6. Supporting reversible surface wetting characteristics to return to hydrophobic recovery oxygen re-adsorption process when UV is irradiated with zinc oxide in air (on a flat substrate) and then stored in ultra-high vacuum for an extended period of time The verification is achieved by observing the lack of increased contact angle. Thus, in air, water adsorbed at the surface during light irradiation is thermodynamically replaced by oxygen species over a period of time. This substitution (making it again hydrophobic) is slow and it is determined that the hydrophobic recovery time observed for zinc oxide is longer. Due to the much slower oxygen desorption and re-adsorption surface chemistry, this photochemical contact angle decay and subsequent reversal observed for UV exposure in air is not shown to correlate with fast (pure electron) bulk electron photoconductivity processes. Sex, see Figure 8.
在UV輻照期間,氧化鋅顯示與針對二氧化鈦(具有相當帶隙之另一金屬氧化物半導體)所報道類似之表面化學。假定分子氧吸附於二氧化鈦表面缺陷位點處,且然後其捕獲光生成之電子而成為O2 - (ads)物質。在UV輻照期間,該等O2 - (ads)物質以與氧化鋅類似之方式經歷光脫附作為來自TiO2表面之O2(g)。因此,對於氧化鋅及二氧化鈦表面二者而言,關於光導電性及光可轉變式潤濕觀察到相同特徵。 During UV irradiation, zinc oxide showed surface chemistry similar to that reported for titanium dioxide (another metal oxide semiconductor having a comparable band gap). It is assumed that molecular oxygen is adsorbed at the surface defect site of titanium dioxide, and then it captures electrons generated by light to become O 2 - (ads) substances. During UV irradiation, the O 2 - (ads) materials undergo photodesorption as O 2 (g) from the surface of TiO 2 in a manner similar to zinc oxide. Thus, for both zinc oxide and titanium dioxide surfaces, the same characteristics are observed with respect to photoconductivity and photo-switchable wetting.
由於將氧化鋅沈積於粗糙化表面(例如非織造聚丙烯)上,針對平坦基板(例如矽晶圓或玻璃蓋玻片)未觀察到上述可逆可濕性改變;水接觸角滯後變得可忽略,參見表2。理論研究預測,就理想表面(其中水滴與所有表面接觸)而言,水接觸角滯後應隨粗糙度增加而達到最大值,超過該最大值液體即不能完全潤濕整個表面。就此而言,表面 潤濕遵守Cassie-Baxter關係,其中粗糙度如此之大以致於空氣在液體-表面接觸期間被捕獲而導致不完全潤濕。在本實驗中,正是由於所沈積氧化鋅膜之粗糙紋理(肉眼可見)才產生高平衡水接觸角,圖5。 Since zinc oxide is deposited on roughened surfaces (eg, nonwoven polypropylene), the above reversible wettability change is not observed for flat substrates such as tantalum wafers or glass coverslips; water contact angle hysteresis becomes negligible See Table 2. Theoretical studies predict that for an ideal surface where the water droplets are in contact with all surfaces, the water contact angle hysteresis should reach a maximum as the roughness increases, beyond which the liquid does not completely wet the entire surface. In this regard, the surface Wetting follows the Cassie-Baxter relationship where the roughness is so great that air is trapped during liquid-surface contact resulting in incomplete wetting. In this experiment, it was the rough texture of the deposited zinc oxide film (visible to the naked eye) that produced a high equilibrium water contact angle, Figure 5.
此外,藉由將基板自二維結構(平坦)變成多孔三維結構(非織造)而增強Cassie-Baxter特徵,最終達成極低接觸角滯後,參見表2。儘管在經氧化鋅塗覆之非織造聚丙烯之情形下,將在UV暴露期間增加表面能量(如圖8中所展示),但對於超疏水性而言,仍應維持充足的Cassie-Baxter特徵。 In addition, the Cassie-Baxter feature is enhanced by changing the substrate from a two-dimensional structure (flat) to a porous three-dimensional structure (nonwoven), ultimately achieving very low contact angle hysteresis, see Table 2. Although in the case of zinc oxide coated nonwoven polypropylene, the surface energy will be increased during UV exposure (as shown in Figure 8), sufficient Cassie-Baxter characteristics should be maintained for superhydrophobicity. .
經氧化鋅塗覆之聚丙烯布基板亦經量測為殺菌效應顯著。測試大腸桿菌,此乃因其因對許多習用抗菌表面之殺滅有抗性而著名。在本研究中所觀察到之抗菌活性最可能歸因於經氧化基團物質於氧化鋅表面上之存在。舉例而言,氧基團物質可係形成諸如過氧化氫等分子之前體,該等分子藉由對細菌細胞壁、蛋白質及核酸造成損傷而對細菌具有毒性。此抗菌機制似乎並不與UV誘發之光電導及光可濕性機制密切相關,如藉由預先經UV輻照之氧化鋅表面連續殺滅細菌可見,參見表3。 The zinc oxide coated polypropylene cloth substrate was also measured to have a significant bactericidal effect. E. coli was tested because it is known for its resistance to the killing of many conventional antibacterial surfaces. The antibacterial activity observed in this study is most likely due to the presence of the oxidized group material on the zinc oxide surface. For example, an oxygen group material can form a molecular precursor such as hydrogen peroxide, which is toxic to bacteria by causing damage to bacterial cell walls, proteins, and nucleic acids. This antibacterial mechanism does not appear to be closely related to UV-induced photoconductivity and photo-wetability mechanisms, such as by continuous killing of bacteria by UV-irradiated zinc oxide surfaces, see Table 3.
經鈀觸媒加晶種之脈衝電漿聚(4-乙烯基吡啶)奈米層已用於結晶氧化鋅薄膜之無電鍍生長。發現,該等結晶氧化鋅薄膜顯示光導電性、光可轉變式潤濕、超疏水性及抗菌性質。 Pulsed plasma poly(4-vinylpyridine) nanolayers seeded with palladium catalyst have been used for electroless plating of crystalline zinc oxide films. These crystalline zinc oxide films were found to exhibit photoconductivity, photo-switchable wetting, superhydrophobicity, and antibacterial properties.
圖1展示本發明實施例之反應方案,亦即,對脈衝電漿沈積之聚(4-乙烯基吡啶)膜進行鈀觸媒加晶種,隨後氧化鋅無電鍍生長。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows a reaction scheme of an embodiment of the present invention, i.e., palladium catalyst seeding of a pulsed plasma deposited poly(4-vinylpyridine) film followed by electroless plating of zinc oxide.
圖2展示以下之XPS光譜:(a)脈衝電漿沈積之聚(4-乙烯基吡啶);(b)用氯化鈀(II)加晶種之脈衝電漿沈積之聚(4-乙烯基吡啶);(c)在經氯化鈀(II)加晶種之脈衝電漿沈積之聚(4-乙烯基吡啶)上無電鍍生長之氧化鋅。 Figure 2 shows the following XPS spectra: (a) pulsed plasma deposited poly(4-vinylpyridine); (b) pulsed plasma deposited poly(4-vinyl) with palladium chloride (II) seeding Pyridine); (c) electroless zinc oxide grown on poly(4-vinylpyridine) deposited by pulsed plasma deposition of palladium chloride (II).
圖3展示以下之紅外光譜:(a)4-乙烯基吡啶單體;及(b)脈衝電漿沈積之聚(4-乙烯基吡啶)。*表示前體中之可聚合烯烴鍵吸光度。 Figure 3 shows the following infrared spectra: (a) 4-vinylpyridine monomer; and (b) pulsed plasma deposited poly(4-vinylpyridine). * indicates the absorbance of the polymerizable olefin bond in the precursor.
圖4展示在經鈀加晶種之脈衝電漿沈積之聚(4-乙烯基吡啶)上無電鍍生長之500 nm厚氧化鋅膜之X射線繞射分析。 Figure 4 shows an X-ray diffraction analysis of a 500 nm thick zinc oxide film electrolessly grown on poly(4-vinylpyridine) pulsed plasma deposited by palladium seeding.
圖5係在經鈀加晶種之脈衝電漿沈積之聚(4-乙烯基吡啶)上無電鍍生長之氧化鋅膜之光學顯微鏡影像。 Figure 5 is an optical microscopy image of a zinc oxide film grown electrolessly on poly(4-vinylpyridine) deposited by pulsed plasma deposition of palladium.
圖6展示藉由無電鍍沈積至非導電玻璃上生長之500 nm厚之氧化鋅:(a)在空氣中進行UV輻照(在750 s時關閉)之後之導電率及平衡水接觸角;及(b)氧化鋅膜在UV光於750 s(偏移時間=0 h)時消失之後之平衡水接觸角恢復。 Figure 6 shows 500 nm thick zinc oxide grown by electroless deposition onto non-conductive glass: (a) Conductivity and equilibrium water contact angle after UV irradiation in air (closed at 750 s); (b) The equilibrium water contact angle of the zinc oxide film after UV light disappeared at 750 s (offset time = 0 h).
圖7展示在矽晶圓上無電鍍沈積之氧化鋅之XPS C(1s)包絡:(a)未經UV暴露及(b)750 s UV暴露。 Figure 7 shows the XPS C (1s) envelope of electrolessly deposited zinc oxide on a germanium wafer: (a) without UV exposure and (b) 750 s UV exposure.
圖8展示闡釋在UV輻照且隨後氧再吸附期間氧化鋅表面上吸附之物質隨時間改變之機制。 Figure 8 shows the mechanism by which the material adsorbed on the zinc oxide surface changes over time during UV irradiation and subsequent oxygen resorption.
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