TW201327912A - Nitride semiconductor light emitting device - Google Patents

Abstract

A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.

Description

Nitride semiconductor light-emitting element having a magnetic layer

The present disclosure relates to a light-emitting element, and more particularly to a nitride semiconductor light-emitting element.

Unlike a fluorescent lamp or an incandescent lamp that emits light in general, a semiconductor light-emitting element, such as a light emitting diode (LED), emits light using a special property of a semiconductor, in which light is emitted. The light emitted by the diode is cold luminescence. Such a light-emitting element has the advantages of long service life, light weight, and low energy consumption, and thus such a light-emitting element has been used in various applications, such as an optical display, a traffic light number, a data storage device, a communication device, a lighting device, and Medical equipment.

In recent years, environmental awareness has become more prevalent in many countries, and the public has begun to pay attention to how to save energy. In order to save energy, it is a good choice to use high energy efficiency electronic devices that do not affect the convenience of daily life and still have energy saving. Therefore, how to improve the luminous efficiency of a light-emitting element has become an important issue in this field.

However, today's LED technology is mature, and the progress of improving LED luminous efficiency by conventional technology is rather limited.

An embodiment of the present disclosure provides a nitride semiconductor light-emitting device including an N-type nitride semiconductor layer, a P-type nitride semiconductor layer, a light-emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer. The light emitting semiconductor layer is disposed between the N-type nitride semiconductor layer and the P-type nitride semiconductor layer. The first metal pad is electrically connected to the N-type nitride semiconductor layer. The second metal pad is electrically connected to the P-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the N-type nitride semiconductor layer. The distribution area of the first magnetic material layer parallel to the (0001) plane of the N-type semiconductor layer is greater than or equal to the area of the first metal pad parallel to the (0001) plane.

An embodiment of the present disclosure provides a nitride semiconductor light-emitting device including an N-type nitride semiconductor layer, a P-type nitride semiconductor layer, a light-emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer. The light emitting semiconductor layer is disposed between the N-type nitride semiconductor layer and the P-type nitride semiconductor layer. The first metal pad is electrically connected to the N-type nitride semiconductor layer. The second metal pad is electrically connected to the P-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the N-type nitride semiconductor layer. The distribution area of the first magnetic material layer parallel to the (0001) plane of the N-type nitride semiconductor layer is greater than or equal to the area of the second metal pad parallel to the (0001) plane.

An embodiment of the present disclosure provides a nitride semiconductor light-emitting device including an N-type nitride semiconductor layer, a P-type nitride semiconductor layer, a light-emitting semiconductor layer, a first metal pad, a second metal pad, and a magnetic material layer. The light emitting semiconductor layer is disposed between the N-type nitride semiconductor layer and the P-type nitride semiconductor layer. The first metal pad is electrically connected to the N-type nitride semiconductor layer. The second metal pad is electrically connected to the P-type nitride semiconductor layer. The magnetic material layer is disposed between the second metal pad and the P-type nitride semiconductor layer. The distribution area of the magnetic material layer parallel to the (0001) plane of the N-type nitride semiconductor layer is greater than or equal to the area of the second metal pad parallel to the (0001) plane.

The illustrative embodiments of several collocations are described in detail below to further describe the details of the disclosure.

The accompanying drawings are included to provide a further understanding The drawings are used to illustrate the embodiments and are described in conjunction with the description.

1(a) to 1(c) are cross-sectional views showing the structure of a light-emitting element according to an embodiment of the present disclosure. Referring to FIG. 1(a), the light-emitting element 1300a of the present embodiment is a vertical light-emitting diode including a light-emitting chip 1310 and a magnetic material 1320. The light emitting wafer 1310 includes a first electrode 1311, a first doping layer 1312, an active layer 1313, a second doping layer 1314, and a second electrode 1315 from top to bottom, wherein the first doping layer 1312, the active layer 1313, and The second doped layer 1314 forms a light emitting stacked layer. In this embodiment, the first doped layer 1312 is a P-type nitride semiconductor layer, the second doped layer 1314 is an N-type nitride semiconductor layer, and the active layer 1313 includes a plurality of quantum wells or a single quantum well. However, in other embodiments, the first doped layer 1312 can be a P-type semiconductor layer and the second doped layer 1314 can be an N-type semiconductor layer. The first electrode 1311 is disposed on the first doped layer 1312 and electrically coupled to the first doped layer 1312, and the second electrode 1315 is disposed under the second doped layer 1314 and electrically coupled to the second doped layer 1314. To form a vertical light-emitting diode. The active layer 1313 is disposed between the first electrode 1311 and the second electrode 1315 and is capable of generating light when a current flows.

The magnetic material 1320 is disposed on the first electrode 1311 and applies a magnetic field on the light emitting wafer 1310, whereby the main distribution of the current density in the light emitting wafer 1310 is shifted from the area between the first electrode 1311 and the second electrode 1315 to the light exiting. A region under the light-out plane to enhance current homogeneity and increase the overall brightness of the light-emitting element 1300a. In the present embodiment, the thickness T' of the magnetic material 1320 in the direction perpendicular to the active layer 1313 is greater than 1 mm.

In other embodiments, the magnetic material may be disposed on the light emitting stacked layer and cover the first electrode (magnetic material 1330, as shown in FIG. 1(b)), or be disposed on the first electrode (magnetic material 1340, as shown in FIG. 1 ( c) shown on the surface of the luminescent stack layer that is not covered. In FIGS. 1(b) and 1(c), both the magnetic material 1330 and the magnetic material 1340 are magnetic thin films covering the light emitting surface 1302 of the semiconductor stacked structure, and the light B emitted from the active layer 1313 passes through the light emitting surface 1302 and magnetic. The film is then transferred to the outside of the light-emitting elements 1300b, 1300c.

As for the light-emitting diode having a horizontal structure and having a magnetic material disposed therein, the light-emitting element 1300a in Fig. 1(a) can be modified to a horizontal structure. That is, the first electrode 1311 and the second electrode 1315 may be disposed on the same side of the stacked structure of the first doped layer 1312, the active layer 1313, and the second doped layer 1314. Specifically, a portion of the upper surface of the second doped layer 1314 is not covered by the active layer 1313 and the first doped layer 1312, and the second electrode 1315 is disposed at the second doping not covered by the active layer 1313. On this portion of the upper surface of layer 1314.

In other embodiments, the magnetic material may be disposed on the light emitting stacked layer and cover the first electrode, or on the surface of the light emitting stacked layer not covered by the first electrode. In still other embodiments, the magnetic material may be disposed on the second electrode (not shown) without being limited thereto.

Further, experimental evidence shows that when the magnetic material layer is disposed between the semiconductor layer and the electrode (for example, a metal pad) in the nitride semiconductor light-emitting element, the light efficiency of the nitride semiconductor light-emitting element increases.

2A is a top plan view of a nitride semiconductor light emitting device according to an exemplary embodiment, and FIG. 2B is a cross-sectional view of the nitride semiconductor light emitting device of FIG. 2A along line I-I. Referring to FIGS. 2A and 2B, the nitride semiconductor light-emitting device 800 of this embodiment includes an N-type nitride semiconductor layer 810, a P-type nitride semiconductor layer 830, a light-emitting semiconductor layer 820, a first metal pad 840, and a second metal pad. 850 and a first magnetic material layer 860. The light emitting semiconductor layer 820 is disposed between the N-type nitride semiconductor layer 810 and the P-type nitride semiconductor layer 830. In this embodiment, the material of the N-type nitride semiconductor layer 810 is, for example, N-type GaN, the material of the P-type nitride semiconductor layer 830 is, for example, P-type GaN, and the light-emitting semiconductor layer 820 includes, for example, a plurality of quantum well layers or a Quantum well layer.

The first metal pad 840 is electrically connected to the N-type nitride semiconductor layer 810. The second metal pad 850 is electrically connected to the P-type nitride semiconductor layer 830. In this embodiment, the first metal pad 840 is disposed on the N-type nitride semiconductor layer 810, and the second metal pad 850 is disposed on the P-type nitride semiconductor layer 830. Further, in this embodiment, the nitride semiconductor light emitting element 800 is, for example, a horizontal light emitting diode (LED). That is, in this embodiment, the first metal pad 840 and the second metal pad 850 are disposed on the semiconductor stacked structure formed by the N-type nitride semiconductor layer 810, the light-emitting semiconductor layer 820, and the P-type nitride semiconductor layer 830. The same side.

The first magnetic material layer 860 is disposed between the first metal pad 840 and the N-type nitride semiconductor layer 810 , and the first metal pad 840 is electrically connected to the N-type nitride semiconductor layer 810 by the first magnetic material layer 860 . In an embodiment, the material of the first magnetic material layer comprises a compound doped with a magnetic element. Wherein the magnetic element comprises a transition metal, a rare earth element or a combination thereof, and the compound comprises CuAlO ₂ , CuGaO ₂ , AgInO ₂ , SrCu ₂ O ₂ , Cd ₂ SnO ₄ , In ₂ O ₃ , TiO ₂ , Cu ₂ O, ZnO, SnO ₂ , CdO, ZnO, MnSe, ZnSe, CdSe, MgSe, ZnTe, MnTe, MgTe, CdTe, CdS, ZnS, HgS, HgSe, HdTe, NiO, MnO, GaN, InN, AlN, InAs, GaAs, AlAs , GaP, InP, GaSb, AlSb, InSb, Si, Ge, SiGe, SiC, graphene, carbon nanotubes, bucky balls, Bi ₂ Te ₃ , Bi ₂ Se ₃ , Sb ₂ Te ₃ , Sb ₂ Se ₃ , yttrium barium copper oxide (YBCO), bismuth strontium calcium copper oxide (BSCOO), HgBaCaCuO (HBCCO), FeAs, SmFeAs, CeFeAs, LaFeAs, MgB or a combination thereof, wherein the rare earth element comprises Pr, Nd, Sm, Gd, Dy or a combination thereof.

In another embodiment, the material of the first magnetic material layer 860 includes Co, Fe, Ni, Mn, NiFe, CoFe, CoFeB, SmCo, NdFeB, ΩFeN (Ω represents Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm or Yb), ΩFeC (Ω stands for Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm or Yb), CrO ₂ , Fe ₃ O ₄ , La _1-x Φ _x Mn (Φ represents Ca, Ba or Sr, and x is about 0.3), Ψ ₂ ΔΣO ₆ (Ψ represents Ca, Sr or B; Δ represents Co or Fe; and Σ represents Mo or Re), GdN, NiMnSb, PtMnSb, Fe _1-x Co _x Si (x is greater than 0 and less than 1), Fe ₂ CrSi, Co ₂ MnSi, Fe ₂ ΘSi (Θ represents Cr, Mn, Fe, Co or Ni), Cr ₂ O ₃ , TbMnO ₃ , HoMn ₂ O ₅ , HoLuMnO ₃ , YMnO ₃ , DyMnO ₃ , LuFe ₂ O ₄ , BiFeO ₃ , BiMnO ₃ , BaTiO ₃ , PbVO ₃ , PrMnO ₃ , CaMnO ₃ , K ₂ SeO ₄ , Cs ₂ Cdl ₄ , BaNiF ₄ , ZnCr ₂ Se ₄ or a combination thereof. Except for the nouns listed under the full name, the abbreviation of the material before and after this is the chemical symbol, while the previous Greek letters represent any of the possible chemical symbols. For example, Ψ ₂ ΔΣO ₆ may be Ca ₂ CoMoO ₆ , Sr ₂ CoMoO ₆ , B ₂ CoMoO ₆ , Ca ₂ FeMoO ₆ , Sr ₂ FeMoO ₆ , B ₂ FeMoO ₆ , Ca ₂ CoReO ₆ , Sr ₂ CoReO ₆ , B ₂ CoReO ₆ , Ca ₂ FeReO ₆ , Sr ₂ FeReO ₆ or B ₂ FeReO ₆ .

In this embodiment, the material of the first magnetic material layer 860 is Co-doped ZnO, and the doping concentration of Co in ZnO has a mole ratio of 2.5% to 20%. For example, the doping concentration of Co in ZnO has a molar ratio of 5% or 7%. However, in other embodiments, the material of the first magnetic material layer 860 may include Mn doped ZnO, or may include a combination of Co doped ZnO and Mn doped ZnO.

The distribution area of the (0001) plane of the first magnetic material layer 860 parallel to the N-type nitride semiconductor layer 810 is greater than or equal to the area of the first metal pad 840 parallel to the (0001) plane. "(0001)" is the Miller indices. In this embodiment, the N-type semiconductor layer 810, the light-emitting semiconductor layer 820, and the P-type nitride semiconductor layer 830 grow along the [0001] direction, wherein "[0001]" is a Miller index and represents a vertical to the (0001) plane. The direction. That is, the (0001) plane is substantially parallel to the interface between the N-type semiconductor layer 810 and the light-emitting semiconductor layer 820.

In this embodiment, the thickness of the first magnetic material layer 860 in a direction perpendicular to the (0001) plane (that is, the [0001] direction) ranges from 20 nanometers (nm) to 1 micrometer (μm). For example, the thickness of the first magnetic material layer 860 in a direction perpendicular to the (0001) plane is 120 nm. Further, in this embodiment, the distribution area of the (0001) plane of the first magnetic material layer 860 parallel to the N-type nitride semiconductor layer 810 is greater than or equal to the area of the second metal pad 850 parallel to the (0001) plane. Further, in this embodiment, the magnetic polarization direction of the first magnetic material layer 860 is approximately parallel to the (0001) plane.

Considering the energy band structure, the conduction band of ZnO and the conduction band of N-type GaN form a conduction band offset at the interface between ZnO and N-type GaN, and the conduction band is biased. The shift is approximately 0.15 eV. If one or some dopants are incorporated into ZnO (eg, the material of the first magnetic material layer 860 is Co-doped ZnO), the band structure and the number of free electrons will change, eliminating the conduction band offset. Therefore, the conductivity between the first metal pad 840 and the N-type nitride semiconductor layer 810 in the present embodiment is increased, and is higher than the metal pad and the N-type GaN layer when the metal pad is in direct contact with the N-type GaN layer. Electrical conductivity. Further, if the material of the metal pad is a Ti-based metal, and if the metal pad is in direct contact with the N-type GaN layer, TiN is formed at the interface between the metal pad and the N-type GaN layer, and TiN reduces conductivity. However, in the present embodiment, if the first metal pad 840 is a Ti-based metal, TiO ₂ will be formed between the first metal pad 840 and the N-type nitride semiconductor layer 810. Since TiO ₂ has good conductivity, the electrical conductivity between the first metal pad 840 and the N-type nitride semiconductor layer 810 is good.

Moreover, in the present embodiment, the first metal pad 840 has a joint portion 842 and at least one finger portion 844 (such as the plurality of fingers 844 illustrated in FIG. 2A) connected to the joint portion 842. A bonding wire or bump can be engaged with the joint 842, and the fingers 844 extend along at least one direction parallel to the (0001) plane. In addition, in the present embodiment, the nitride semiconductor light-emitting device 800 further includes a transparent conductive layer 870 disposed on the P-type nitride semiconductor layer 830 and physically and electrically connected to the second metal pad 850. In this embodiment, the material of the transparent conductive layer 870 is, for example, indium tin oxide (ITO) or other transparent conductive material.

3A is a top plan view of a nitride semiconductor light emitting device according to another exemplary embodiment, and FIG. 3B is a cross-sectional view of the nitride semiconductor light emitting element of FIG. 3A along line II-II. Referring to FIGS. 3A and 3B, the nitride semiconductor light-emitting element 800a in this embodiment is similar to the nitride semiconductor light-emitting element 800, and the differences are as follows. In this embodiment, the nitride semiconductor light emitting device 800 further includes a second magnetic material layer 860a disposed between the second metal pad 850 and the P-type nitride semiconductor layer 830. The distribution area of the second magnetic material layer 860a parallel to the (0001) plane of the N-type nitride semiconductor layer 810 is greater than or equal to the area of the second metal pad 850 parallel to the (0001) plane.

In this embodiment, the material of the second magnetic material layer 860a is Co-doped ZnO. However, in other embodiments, the material of the second magnetic material layer 860a may include Mn doped ZnO or a combination of Co doped ZnO and Mn doped ZnO. Further, in this embodiment, the molar ratio of the doping concentration of Co in ZnO ranges from 2.5% to 9%. Further, in this embodiment, the thickness of the second magnetic material layer 860a in a direction perpendicular to the (0001) plane ranges from 20 nanometers (nm) to 0.6 micrometers (μm).

In this embodiment, since the holes flow from the second metal pad 850 to the light emitting semiconductor layer 820 via the magnetic material layer 860a and the P type nitride semiconductor layer 830, the light efficiency of the nitride semiconductor light emitting element 800a is thereby enhanced.

4A is a top plan view of a nitride light-emitting device according to another embodiment, and FIG. 4B is a cross-sectional view of the nitride semiconductor light-emitting device of FIG. 4A along line III-III. Referring to FIGS. 4A and 4B, the nitride semiconductor light-emitting element 800b in this embodiment is similar to the nitride semiconductor light-emitting element 800a in FIGS. 3A and 3B, and the differences are as follows. In this embodiment, the second magnetic material layer 860b covers a portion of the P-type nitride semiconductor layer 830, and the transparent conductive layer 870 covers another portion of the P-type nitride semiconductor layer 830. In addition, the transparent conductive layer 870 is physically and electrically connected to the second magnetic material layer. In addition, the distribution area of the (0001) plane of the second magnetic material layer 860b parallel to the N-type nitride semiconductor layer 810 is greater than or equal to the area of the second metal pad 850 parallel to the (0001) plane. The material and thickness of the second magnetic material layer 860b are the same as those of the second magnetic material layer 860a in FIGS. 3A and 3B, and therefore will not be repeated here.

FIG. 5 is a schematic cross-sectional view of a nitride semiconductor light emitting device according to another exemplary embodiment. Referring to Fig. 5, the nitride semiconductor light-emitting element 800c in this embodiment is similar to the semiconductor light-emitting element 800a in Fig. 3B and the semiconductor light-emitting element 800b in Fig. 4B, and the differences are as follows. In the nitride semiconductor light-emitting element 800c, the transparent conductive layer 870 is disposed between the second magnetic material layer 860a and the P-type nitride semiconductor layer 830.

6A is a top plan view of a nitride semiconductor light emitting device according to another exemplary embodiment, and FIG. 6B is a cross-sectional view of the nitride semiconductor light emitting element of FIG. 6A along line IV-IV. Referring to FIGS. 6A and 6B, the nitride semiconductor light-emitting element 800d in this embodiment is similar to the nitride semiconductor light-emitting element 800 of FIG. 2B and the nitride semiconductor light-emitting element 800a of FIG. 3A, and the differences are as follows. In this embodiment, the nitride semiconductor light emitting element 800d includes a first magnetic material layer 860 and a second magnetic material layer 860a. The first magnetic material layer 860 is disposed between the first metal pad 840 and the N-type nitride semiconductor layer 810, and the second magnetic material layer 860a is disposed between the second metal pad 850 and the P-type nitride semiconductor layer 830.

FIG. 7A is a top plan view of a nitride semiconductor light emitting device according to another exemplary embodiment, and FIG. 7B is a cross-sectional view of the nitride semiconductor light emitting element of FIG. 7A along line V-V. Referring to FIGS. 7A and 7B, the nitride semiconductor light-emitting element 800e in this embodiment is similar to the semiconductor light-emitting element 800 of FIG. 2B and the semiconductor light-emitting element 800b of FIG. 4B, and the differences are as follows. In this embodiment, the nitride semiconductor light emitting element 800e includes both the first magnetic material layer 860 and the second magnetic material layer 860b. The first magnetic material layer 860 is disposed between the first metal pad 840 and the N-type nitride semiconductor layer 810, and the second magnetic material layer 860b is disposed between the second metal pad 850 and the P-type nitride semiconductor layer 830.

FIG. 8 is a schematic cross-sectional view of a nitride semiconductor light emitting device according to another exemplary embodiment. Referring to Fig. 8, the nitride semiconductor light-emitting element 800f in this embodiment is similar to the nitride semiconductor light-emitting element 800 of Fig. 2B and the nitride semiconductor light-emitting element 800c of Fig. 5, and the differences are as follows. In this embodiment, the nitride semiconductor light-emitting element 800f includes both the first magnetic material layer 860 and the second magnetic material layer 860a. The first magnetic material layer 860 is disposed between the first metal pad 840 and the N-type nitride semiconductor layer 810, and the second magnetic material layer 860a is disposed between the second metal pad 850 and the transparent conductive layer 870.

FIG. 9 is a schematic cross-sectional view of a nitride semiconductor light emitting device according to another exemplary embodiment. Referring to Fig. 9, the nitride semiconductor light-emitting element 800g in this embodiment is similar to the nitride semiconductor light-emitting element 800 in Fig. 2B, and the difference is as follows. In this embodiment, the nitride semiconductor light emitting element 800g is a vertical type LED. That is, the N-type nitride semiconductor layer 810g is disposed between the light-emitting semiconductor layer 820 and the first metal layer 840g, and the P-type nitride semiconductor layer 830 is disposed between the light-emitting semiconductor layer 820 and the second metal pad 850. In this embodiment, the transparent conductive layer 870 is disposed between the second metal pad 850 and the P-type nitride semiconductor layer 830. The material of the N-type nitride semiconductor layer 810g is the same as that of the N-type nitride semiconductor layer 810, and the material of the first metal pad 840g is the same as that of the first metal pad 840.

In this embodiment, the N-type nitride semiconductor layer 810g, the light-emitting semiconductor layer 820, and the P-type nitride semiconductor layer 830 are grown in the [0001] direction as shown in FIG. 2B. In this embodiment, the distribution area of the (0001) plane of the first magnetic material layer 860g parallel to the N-type nitride semiconductor layer 810g is equal to the area of the first metal pad 840g parallel to the (0001) plane. However, in other embodiments, the distribution area of the (0001) plane of the first magnetic material layer 860g parallel to the N-type nitride semiconductor layer 810g may be larger than the area of the first metal pad 840g parallel to the (0001) plane.

FIG. 10 is a schematic cross-sectional view of a nitride semiconductor light emitting device according to another exemplary embodiment. Referring to Fig. 10, the nitride semiconductor light-emitting element 800h in this embodiment is similar to the nitride semiconductor light-emitting element 800a of Fig. 3B and the nitride semiconductor light-emitting element 800g of Fig. 9, and the differences are as follows. In this embodiment, the nitride semiconductor light-emitting element 800h is a vertical LED, and the second magnetic material layer 860a is disposed between the second metal pad 850 and the P-type nitride semiconductor layer 830.

FIG. 11 is a schematic cross-sectional view of a nitride semiconductor light emitting device according to another exemplary embodiment. Referring to Fig. 11, the nitride semiconductor light-emitting element 800i in this embodiment is similar to the nitride semiconductor light-emitting element 800c of Fig. 5 and the nitride semiconductor light-emitting element 800h of Fig. 10, and the differences are as follows. In the nitride semiconductor light-emitting element 800i of this embodiment, the transparent conductive layer 870 is disposed between the second magnetic material layer 860a and the P-type nitride semiconductor layer 830.

FIG. 12 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment. Referring to Fig. 12, the nitride semiconductor light-emitting element 800j in this embodiment is similar to the nitride semiconductor light-emitting element 800g in Fig. 9 and the nitride semiconductor light-emitting element 800h in Fig. 10, and the differences are as follows. In this embodiment, the nitride semiconductor light emitting element 800j includes both the first magnetic material layer 860g and the second magnetic material layer 860a. The first magnetic material layer 860g is disposed between the N-type semiconductor layer 810g and the metal pad 840g, and the second magnetic material layer 860a is disposed between the P-type nitride semiconductor layer 830 and the second metal pad 850.

FIG. 13 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment. Referring to Fig. 13, the nitride semiconductor light-emitting element 800k in this embodiment is similar to the nitride semiconductor light-emitting element 800g in Fig. 9 and the nitride semiconductor light-emitting element 800i in Fig. 11, and the differences are as follows. In this embodiment, the nitride semiconductor light-emitting element 800k includes both the first magnetic material layer 860g and the second magnetic material layer 860a. The first magnetic material layer 860g is disposed between the N-type nitride semiconductor layer 810g and the first metal pad 840g, and the second magnetic material layer 860a is disposed between the transparent conductive layer 870 and the second metal pad 850.

FIG. 14 is a schematic cross-sectional view of a nitride semiconductor light emitting device according to another exemplary embodiment. Referring to Fig. 14, the nitride semiconductor light-emitting element 8001 in this embodiment is similar to the nitride semiconductor light-emitting element 800h in Fig. 10, and the difference is as follows. In this embodiment, the nitride semiconductor light-emitting element 8001 further includes a reflective layer 880 disposed between the N-type nitride semiconductor layer 810g and the first metal pad 840g to reflect light from the light-emitting semiconductor layer 820. In this embodiment, the reflective layer 880 is, for example, a reflective metal layer and is electrically conductive.

FIG. 15 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment. Referring to Fig. 15, the nitride semiconductor light-emitting element 800m in this embodiment is similar to the nitride semiconductor light-emitting element 800e in Fig. 7B, and the difference is as follows. In FIG. 7B, the distribution area of the (0001) plane of the first magnetic material layer 860 parallel to the N-type nitride semiconductor layer 810 is larger than the area of the first metal pad 840 parallel to the (0001) plane, and the second magnetic material The area of the layer 860b parallel to the (0001) plane of the N-type nitride semiconductor layer 810 is larger than the area of the second metal pad 850 parallel to the (0001) plane. However, in the nitride semiconductor light-emitting element 800m, the distribution area of the (0001) plane of the first magnetic material layer 860m1 parallel to the N-type nitride semiconductor layer 810 is equal to the area of the first metal pad 840 parallel to the (0001) plane. And the distribution area of the (0001) plane of the second magnetic material layer 860m2 parallel to the N-type nitride semiconductor layer 810 is equal to the area of the second metal pad 850 parallel to the (0001) plane.

Fig. 16 is a graph showing a graph of optical power versus operating current of a nitride semiconductor light-emitting element having no magnetic material layer and a nitride semiconductor light-emitting element having a first magnetic material layer. In Fig. 16, the curve referred to as "general" corresponds to the material of the nitride light-emitting element which does not have any magnetic material layer. The curve referred to as "ZnO doped with 5% Co" corresponds to a material of a nitride semiconductor light-emitting device having a first magnetic material layer, wherein the material of the first magnetic material layer is Co-doped ZnO, and Co is in ZnO. The molar ratio of the concentration is 5%. The curve referred to as "ZnO doped with 7% of Co" corresponds to a material of a nitride semiconductor light-emitting device having a first magnetic material layer in which a material of the first magnetic material layer is Co-doped ZnO, and Co is in ZnO. The molar ratio of the concentration in the medium is 7%. 16 shows that the optical power of the nitride semiconductor light-emitting element having the first magnetic material layer is higher than that of the nitride semiconductor light-emitting element having no magnetic material layer, and shows that the nitride semiconductor light-emitting element is higher as the doping concentration is higher. The higher the optical power.

17A to 17C illustrate other variations of the shapes of the first metal pad, the second metal pad, and the P-type nitride semiconductor layer in FIG. 2A. Referring to FIGS. 2A and 17A to 17C, the shapes of the first metal pad 840, the second metal pad 850, and the P-type nitride semiconductor layer 830 are not limited to those illustrated in FIG. 2A. In other embodiments, the first metal pads 840n, 840p, 840q, the second metal pads 850n, 850p, respectively, among the nitride semiconductor light-emitting elements 800n, 800p, 800q in FIGS. 17A, 17B and 17C, The 850q and P-type nitride semiconductor layers 830n, 830p, 830q may have other different shapes. In the embodiment of FIG. 2A to FIG. 8 and FIG. 15, the first metal pad 840, the second metal pad 850, and the P-type nitride semiconductor layer 830 may be changed to the first metal pad 840n, 840p or 840q, and the second metal pad. The shape of the 850n, 850p or 850q and P-type nitride semiconductor layers 830n, 830p or 830q or other suitable shape, and the shapes of the first magnetic material layer and the second magnetic material layer may also be changed according to the above changed shape.

Figure 18 shows the optical power of a nitride semiconductor light-emitting element having no magnetic material layer and a nitride semiconductor light-emitting element having a first magnetic material layer. Referring to FIGS. 17A to 17C and FIG. 18, the materials referred to by "Standard 800n", "Standard 800p", and "Standard 800q" correspond to each other without any magnetic material layer and have the shape as shown in FIGS. 17A, 17B, and 17C. Information on nitride semiconductor light-emitting elements. In addition, the materials referred to as "Co-doped ZnO 800n", "Co-doped ZnO 800p", and "Co-doped ZnO 800q" have corresponding shapes as shown in FIGS. 17A, 17B, and 17C and have materials. A material for a nitride semiconductor light-emitting element of a first magnetic material layer of Co-doped ZnO. The "LED number" represents the same type of nitride semiconductor light-emitting element having different numbers, and "power (watt)" represents the optical power of the nitride semiconductor light-emitting element. 18 shows that the optical power of the nitride semiconductor light-emitting element having a magnetic material layer is higher than that of the nitride semiconductor light-emitting element having no magnetic material layer.

Figure 19 shows the average optical power of LED numbers 1-15, which also considers the doping concentration of Co in ZnO. In FIG. 19, the materials referred to as "ZnO doped with 5% Co" and "ZnO doped with 7% Co" each correspond to a nitride semiconductor light-emitting device having a first magnetic material layer in which Co is in ZnO. The doping concentrations are each 5% or 7%. 19 shows that the maximum increase of the nitride semiconductor light-emitting element having the first magnetic material layer may reach, for example, about 20% with respect to the nitride semiconductor light-emitting element having no magnetic material layer.

FIG. 20 is a cross-sectional view of a light emitting element according to an exemplary embodiment. Referring to FIG. 20, in the case of an LED having a vertical structure, the light-emitting element 500a of the present embodiment is a vertical LED including a light-emitting chip 510 and a magnetic material (for example, a magnetic base 520). The magnetic pedestal 520 is disposed beside the luminescent wafer 510. In this embodiment, the light-emitting wafer 510 is disposed on the magnetic base 520 by an epoxy, metal bonding, wafer bonding, epitaxy embedding or coating process.

The light emitting wafer 510 includes a first electrode 511, a first doping layer 512, an active layer 513 (eg, a light emitting semiconductor layer), a second doping layer 514, a substrate 515, and a second electrode 516 from top to bottom, wherein the first doping The impurity layer 512, the active layer 513, and the second doping layer 514 form a light-emitting stacked layer (that is, a semiconductor stacked structure) and are disposed on the substrate 515. The first electrode 511 is disposed on the first doped layer 512 and electrically coupled to the first doped layer 512, and the second electrode 516 is disposed under the substrate 515 and electrically coupled to the second doped layer 514 to form a vertical LED structure. The active layer 513 is disposed between the first electrode 511 and the second electrode 516 and generates light when a current passes.

In this embodiment, the light emitting element 500a further includes a first magnetic material layer 860g (the first magnetic material layer 860g as shown in FIG. 9) and a second magnetic material layer 860b (the second magnetic material as shown in FIG. 4B). The layer 860b), wherein the first magnetic material layer 860g is disposed between the second electrode 516 and the substrate 515, and the second magnetic material layer 860b is disposed between the first electrode 511 and the first doping layer 512. For the reasons described in the above embodiments, the light efficiency of the first magnetic material layer 860g and the second magnetic material layer 860b increases the light efficiency of the light-emitting element 500a. In other embodiments, the light emitting element 500a can include a first magnetic material layer 860, but does not include a second magnetic material layer 860b. Alternatively, the light emitting element 500a may include the second magnetic material layer 860b without including the first magnetic material layer 860.

In addition, a magnetic field induced by the magnetic pedestal 520 is applied to the luminescent wafer 510, whereby the main distribution of the current density in the luminescent wafer 510 is moved from the region between the first electrode 511 and the second electrode 516 to the region under the light exiting plane. To enhance current uniformity and increase the overall brightness of the light-emitting element 500a.

In this embodiment, the magnetic pedestal 520 is not disposed on the conduction path of the current, wherein the conductive path passes through the first doped layer 512, the active layer 513, and the second doped layer 514. This current causes the illuminating wafer 510 to illuminate and this current does not pass through the magnetic pedestal 520. More precisely, the light emitting element 500a may include an insulating layer 502 and a circuit layer 504. The insulating layer 502 is disposed between the light emitting chip 510 and the magnetic base 520 to insulate the light emitting chip 510 from the magnetic base 520. The circuit layer 504 is disposed on the insulating layer 502, wherein the insulating layer 502 insulates the circuit layer 504 and the magnetic base 520. The circuit layer 504 includes a first circuit 504a and a second circuit 504b. The first circuit 504a is electrically connected to the first doping layer 512, and the second circuit 504b is electrically connected to the second doping layer 514. In this embodiment, the circuit layer 504 having two circuits is taken as an example, but the disclosure is not limited thereto. In other embodiments, the number of circuits of circuit layer 504 can be adjusted depending on the size of light-emitting element 500a or other needs.

In this embodiment, the first electrode 511 and the second electrode 516 are respectively disposed on opposite sides of the semiconductor stacked structure, and the light emitting element 500a further includes a bonding wire 506 connected to the first electrode 511 and the first circuit 504a. The material of the bonding wire 506 is, for example, gold (Au), gold-tin alloy (AuSn), lead-tin alloy (PbSn), or other suitable metal. Further, each of the first doping layer 512 and the second doping layer 514 is an N-type semiconductor layer and a P-type semiconductor layer, or each is a P-type semiconductor layer and an N-type semiconductor layer. When the first doped layer 512 and the second doped layer 514 are each an N-type semiconductor layer and a P-type semiconductor layer, the path of the current causing the active layer 513 to emit light passes through the second circuit 504b, the second electrode 516, the substrate 515, The second doping layer 514, the active layer 513, the first doping layer 512, the first electrode 511, the bonding wires 506, and the first circuit 504a, and because of the insulating layer 502, current does not pass through the magnetic pedestal 520.

In this embodiment, the thickness T of the magnetic base 520 is greater than 1 micrometer, and the film layers and members of the light-emitting element 500a are not shown to scale in FIG. Precisely, the thickness T of the magnetic pedestal 520 can be greater than the thickness of the luminescent wafer 510. Moreover, in this embodiment, the magnetic pedestal 520 is not in direct contact with the semiconductor stack structure. For example, an insulating layer 502 is disposed between the magnetic pedestal 520 and the semiconductor stacked structure.

In this embodiment, the magnetic base 520 has a larger size than the first electrode 511 and the second electrode 516. For example, the area of the magnetic pedestal 520 in the direction parallel to the active layer 513 is larger than the area of the first electrode 506 in the direction parallel to the active layer 513, and larger than the area of the second electrode 516 in the direction parallel to the active layer 513.

In other embodiments, the barrier layer is disposed between the first electrode 511 and the first doping layer 512 to block a portion of the electrical connection between the first electrode 511 and the second doping layer 512. In another embodiment, the isolation layer is further disposed between the substrate 515 and the magnetic pedestal 520 as described in previous experiments. In another embodiment, the mirror layer may be further disposed between the substrate 515 and the second electrode 516 to reflect light from the active layer 513. In other embodiments, the mirror layer may also be disposed between the second doped layer 514 and the substrate 515 or between the second electrode 516 and the magnetic pedestal 520 to reflect light, but is not limited thereto. In another embodiment, a rough pattern is formed on the upper surface of the first doped layer 512 to increase the surface reflectivity of the first doped layer 512. Further, a rough pattern may be fabricated on the upper surface of the substrate 515 (or on the lower surface of the second doped layer 514), or a rough pattern may be formed on the upper surface of the second electrode (or on the lower surface of the substrate 515).

FIG. 21 is a cross-sectional view showing a structure of a light-emitting element according to another embodiment of the present disclosure. In FIG. 21, the light emitting structure can include a base structure 2264 disposed on the substrate 2252. This base structure 2264 can include, for example, a lower doped stacked layer 2254, an active layer 2256, and an upper doped stacked layer 2258. Here, the lower doped stacked layer 2254 or the upper doped stacked layer 2258 may have different conductive states. However, depending on the operating voltage, the lower doped stacked layer 2254 or the upper doped stacked layer 2258 may be P-type or N-type. In addition, a transparent conductive layer (TCL) 2260 may also be added due to, for example, relatively poor contact characteristics between the electrode and the doped semiconductor material. Furthermore, for better illumination performance in the illumination region, a rough surface 2262 can be formed, for example, on the TCL 2260 or on the upper doped stacked layer 2258. In fact, the rough surface 2262 can be formed on any suitable surface depending on the direction of illumination. Two electrodes 2266 and 2268 respectively disposed on the lower doped stacked layer 2254 and the upper doped stacked layer 2258 are located on the same side of the light emitting structure, and such a structure is also referred to as a horizontal light emitting element. In this horizontal design, a horizontal component of the drive current is included in the upper doped stacked layer 2258 or even the TCL 2260 (if the TCL is added). In particular, the base structure 2264 employs a thin film design to reduce the thickness such that the horizontal component of the drive current is relatively large.

The present disclosure additionally adds a magnetic source layer 2250 disposed on the other side of the substrate 2252. In the present embodiment, the substrate 2252 is, for example, an insulating substrate. Magnetic source layer 2250 is used to generate a magnetic field to redistribute the current density of the horizontal components in the doped stacked layer 2258 in accordance with the mechanism of FIG. 2B. The magnetic source layer 2250 can be, for example, an artificial ferromagnetic layer that is magnetized to provide a magnetic field that is substantially perpendicular to the illuminating region 2270, thereby redistributing the current density of the horizontal component. The positions of the electrodes 2266 and 2268 are set in accordance with the magnetic field to be generated. It is understood that the magnetic source layer 2250 is used to generate a desired magnetic field to shift the drive current, and any suitably modified design can be implemented. The magnetic source layer 2250 can also serve as another substrate. For example, even the magnetic source layer 2250 can function as an external structure or unit without any physical contact. That is, the magnetic source layer 2250 can be an external unit to which a magnetic field is applied or an integrated structural layer in the light emitting structure.

In this embodiment, the light emitting structure further includes a first magnetic material layer 860 as the first magnetic material layer 860 shown in FIG. 2B and a second magnetic material layer as the second magnetic material layer 860b shown in FIG. 4B. 860b, wherein the first magnetic material layer 860 is disposed between the electrode 2266 and the lower doped stacked layer 2254, and the second magnetic material layer 860b is disposed between the electrode 2268 and the upper doped stacked layer 2258. The first magnetic material layer 860 and the second magnetic material layer 860b increase the light efficiency of the light emitting structure for the reasons described in the above embodiments. In other embodiments, the light emitting structure can include a first magnetic material layer 860 but no second magnetic material layer 860b. Alternatively, the light emitting structure may include the second magnetic material layer 860b but does not include the first magnetic material layer 860.

According to the same mechanism concept, a reflective layer may be formed between the substrate 2252 and the lower doped stacked layer 2254, or a reflective layer may be formed between the magnetic source layer 2250 and the substrate 2252. For example, the reflective layer can be a metal layer or otherwise form reflective properties. In another embodiment, the above reflective layer may be replaced by, for example, an insulating layer, a thinned substrate, or a thinned reflective layer.

In the foregoing embodiment, the magnetic source layer 2250 is disposed at the bottom. However, the magnetic source layer 2250 may also be disposed on the upper side. Since the surface layer on the upper side of the light emitting structure is generally non-planar, the magnetic source layer can be implemented by, for example, a package.

In other embodiments, the light emitting structure may also include at least one of the barrier layer described above and the isolation layer described above.

As described above, in the nitride semiconductor light-emitting element according to the exemplary embodiment, the light efficiency of the nitride semiconductor light-emitting element is increased due to the current flowing through the magnetic material layer. In addition, the magnetic material layer can reduce current crowding, thereby increasing the internal quantum efficiency and lifetime of the nitride semiconductor light-emitting element.

It will be apparent to those skilled in the art that various modifications and changes can be made without departing from the spirit or scope of the disclosure. In view of the above, the disclosure is intended to cover modifications and modifications that fall within the scope of the following claims and their equivalents.

500a, 1300a. . . Light-emitting element

502. . . Insulation

504. . . Circuit layer

504a. . . First circuit

504b. . . Second circuit

506. . . Bonding wire

510, 1310. . . Light emitting chip

511, 1311. . . First electrode

512, 1312. . . First doped layer

513, 1313, 2256. . . Active layer

514, 1314. . . Second doped layer

515, 2252. . . Substrate

516, 1315. . . Second electrode

520. . . Magnetic base

800, 800a to 800q. . . Nitride semiconductor light-emitting element

810, 810g. . . N-type nitride semiconductor layer

820. . . Light emitting semiconductor layer

830, 830n to 800q. . . P-type nitride semiconductor layer

840, 840g, 840n to 840q. . . First metal pad

842. . . Joint

844. . . Finger

850, 850n to 850q. . . Second metal pad

860, 860g, 860m1. . . First magnetic material layer

860a, 860b, 860m2. . . Second magnetic material layer

870. . . Transparent conductive layer

880. . . Reflective layer

1302. . . Luminous surface

1320, 1330, 1340. . . Magnetic material

2250. . . Magnetic source layer

2254. . . Underdoped stacked layer

2258. . . Top doped stack

2260. . . Transparent conductive layer

2262. . . Rough surface

2264. . . basicly construct

2266, 2268. . . electrode

2270. . . Luminous area

B. . . Light

(0001). . . surface

[0001]. . . direction

1(a) to 1(c) are cross-sectional views showing the structure of a light-emitting element according to an embodiment of the present disclosure.

2A is a top plan view of a nitride semiconductor light emitting device, according to an exemplary embodiment.

2B is a schematic cross-sectional view of the nitride semiconductor light-emitting device of FIG. 2A taken along line I-I.

FIG. 3A is a top plan view of a nitride semiconductor light emitting element according to another exemplary embodiment.

3B is a schematic cross-sectional view of the nitride semiconductor light-emitting device of FIG. 3A taken along line II-II.

FIG. 4A is a top plan view of a nitride semiconductor light emitting element according to another exemplary embodiment.

4B is a schematic cross-sectional view of the nitride semiconductor light-emitting device of FIG. 4A along line III-III.

FIG. 5 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment.

FIG. 6A is a top plan view of a nitride semiconductor light emitting element according to another exemplary embodiment.

Figure 6B is a cross-sectional view of the nitride semiconductor light-emitting device of Figure 6A taken along line IV-IV.

FIG. 7A is a top plan view of a nitride semiconductor light emitting element according to another exemplary embodiment.

Fig. 7B is a schematic cross-sectional view of the nitride semiconductor light-emitting device of Fig. 7A taken along line V-V.

FIG. 8 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment.

FIG. 9 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment.

FIG. 10 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment.

FIG. 11 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment.

FIG. 12 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment.

FIG. 13 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment.

FIG. 14 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment.

FIG. 15 is a schematic cross-sectional view of a nitride semiconductor light emitting element according to another exemplary embodiment.

Figure 16 is a graph showing a graph of optical power versus operating current for a nitride semiconductor light-emitting element having no magnetic material layer and a nitride semiconductor light-emitting element having a first magnetic material layer.

17A to 17C show other variations of the shapes of the first metal pad, the second metal pad, and the P-type nitride semiconductor layer in FIG. 2A.

Figure 18 shows the optical power of a nitride semiconductor light-emitting element having no magnetic material layer and a nitride semiconductor light-emitting element having a first magnetic material layer.

Figure 19 shows the average optical power of LED numbers 1 through 15, which also takes into account the doping concentration of Co in ZnO.

20 is a cross-sectional view of a light emitting element, in accordance with an exemplary embodiment.

21 is a cross-sectional view showing a schematic structure of a light-emitting element according to another embodiment of the present disclosure.

800. . . Nitride semiconductor light-emitting element

810. . . N-type nitride semiconductor layer

820. . . Light emitting semiconductor layer

830. . . P-type nitride semiconductor layer

840. . . First metal pad

850. . . Second metal pad

860. . . First magnetic material layer

870. . . Transparent conductive layer

[0001]. . . direction

Claims (10)

A nitride semiconductor light-emitting device comprising: an N-type nitride semiconductor layer; a P-type nitride semiconductor layer; and a light-emitting semiconductor layer disposed between the N-type nitride semiconductor layer and the P-type nitride semiconductor layer; a first metal pad electrically connected to the N-type nitride semiconductor layer; a second metal pad electrically connected to the P-type nitride semiconductor layer; and a first magnetic material layer disposed on the first metal Between the pad and the N-type nitride semiconductor layer, wherein a distribution area of the first magnetic material layer parallel to the (0001) plane of the N-type nitride semiconductor layer is greater than or equal to the first metal pad parallel to the ( 0001) Area of the face. The nitride semiconductor light-emitting device of claim 1, wherein the material of the first magnetic material layer comprises a compound doped with a magnetic element, the magnetic element comprising a transition metal, a rare earth metal or a combination thereof, and the compound comprises CuAlO ₂ , CuGaO ₂ , AgInO ₂ , SrCu ₂ O ₂ , Cd ₂ SnO ₄ , In ₂ O ₃ , TiO ₂ , Cu ₂ O, ZnO, SnO ₂ , CdO, ZnO, MnSe, ZnSe, CdSe, MgSe, ZnTe, MnTe, MgTe, CdTe, CdS, ZnS, HgS, HgSe, HdTe, NiO, MnO, GaN, InN, AlN, InAs, GaAs, AlAs, GaP, InP, GaSb, AlSb, InSb, Si, Ge, SiGe, SiC, Graphene, carbon nanotubes, buckyball, Bi ₂ Te ₃ , Bi ₂ Se ₃ , Sb ₂ Te ₃ , Sb ₂ Se ₃ , yttrium barium copper oxide (YBCO), strontium calcium copper oxide Bismuth strontium calcium copper oxide (BSCOO), HgBaCaCuO (HBCCO), FeAs, SmFeAs, CeFeAs, LaFeAs, MgB or a combination thereof. The nitride semiconductor light-emitting device according to claim 1, wherein the material of the first magnetic material layer comprises Co, Fe, Ni, Mn, NiFe, CoFe, CoFeB, SmCo, NdFeB, ΩFeN, ΩFeC, CrO ₂ , Fe ₃ O ₄ , Formula La _1-x Φ _x Mn, Formula Ψ ₂ ΔΣO ₆ , GdN, NiMnSb, PtMnSb, Fe _1-x Co _x Si, Fe ₂ CrSi, Co ₂ MnSi, Formula Fe ₂ ΘSi, Cr ₂ O ₃ , TbMnO ₃ , HoMn ₂ O ₅ , HoLuMnO ₃ , YMnO ₃ , DyMnO ₃ , LuFe ₂ O ₄ , BiFeO ₃ , BiMnO ₃ , BaTiO ₃ , PbVO ₃ , PrMnO ₃ , CaMnO ₃ , K ₂ SeO ₄ , CS ₂ Cdl ₄ , BaNiF ₄ , ZnCr ₂ Se ₄ or a combination thereof, wherein the Ω represents Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm or Yb in the formula ΩFeN and the formula ΩFeC, [Phi] in formula La _1-x Φ _x representative of Mn, Ca, Ba or Sr, x in the formula La _1-x Φ _x Mn is approximately 0.3, the [Psi] in formula Ψ ₂ ΔΣO ₆ represents Ca, Sr, or B, and the Δ in the formula Ψ ₂ ΔΣO ₆ represents Co or Fe, the Σ in the formula Ψ ₂ ΔΣO ₆ represents Mo or Re, the Θ in the formula Fe ₂ ΘSi represents Cr, Mn, Fe, Co or Ni, and x in Fe _1-x Co _x Si is greater than 0 and less than 1. The nitride semiconductor light-emitting device of claim 1, wherein the thickness of the first magnetic material layer in a direction perpendicular to the (0001) plane ranges from 20 nanometers (nm) to 1 micrometer (μm). ). The nitride semiconductor light-emitting device of claim 1, wherein the material of the first magnetic material layer comprises Co-doped ZnO, Mn-doped ZnO, or a combination thereof. The nitride semiconductor light-emitting device of claim 1, wherein a distribution area of the (0001) plane of the first magnetic material layer parallel to the N-type nitride semiconductor layer is greater than or equal to the second metal pad. The area parallel to the (0001) plane. The nitride semiconductor light-emitting device of claim 1, further comprising a second magnetic material layer disposed between the second metal pad and the P-type nitride semiconductor layer, wherein the second magnetic material The distribution area of the (0001) plane parallel to the N-type nitride semiconductor layer of the layer is greater than or equal to the area of the second metal pad parallel to the (0001) plane. The nitride semiconductor light-emitting device of claim 7, wherein the thickness of the second magnetic material layer in a direction perpendicular to the (0001) plane ranges from 20 nanometers (nm) to 0.6 micrometers (μm). ). A nitride semiconductor light-emitting device comprising: an N-type nitride semiconductor layer; a P-type nitride semiconductor layer; and a light-emitting semiconductor layer disposed between the N-type nitride semiconductor layer and the P-type nitride semiconductor layer; a first metal pad electrically connected to the N-type semiconductor layer; a second metal pad electrically connected to the P-type semiconductor layer; and a first magnetic material layer disposed on the first metal pad and the N Between the nitride semiconductor layers, wherein a distribution area of the first magnetic material layer parallel to the (0001) plane of the N-type nitride semiconductor layer is greater than or equal to a parallel of the (0001) plane of the second metal pad area. A nitride semiconductor light-emitting device comprising: an N-type nitride semiconductor layer; a P-type nitride semiconductor layer; and a light-emitting semiconductor layer disposed between the N-type nitride semiconductor layer and the P-type nitride semiconductor layer; a first metal pad electrically connected to the N-type nitride semiconductor layer; a second metal pad electrically connected to the P-type nitride semiconductor layer; and a magnetic material layer disposed on the second metal pad Between the P-type nitride semiconductor layers, wherein a distribution area of the magnetic material layer parallel to a (0001) plane of the N-type nitride semiconductor layer is greater than or equal to a parallel of the (0001) plane of the second metal pad area.