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TW201326043A - 低沸點化合物於氯矽烷製程中之用途 - Google Patents

低沸點化合物於氯矽烷製程中之用途 Download PDF

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Publication number
TW201326043A
TW201326043A TW101133119A TW101133119A TW201326043A TW 201326043 A TW201326043 A TW 201326043A TW 101133119 A TW101133119 A TW 101133119A TW 101133119 A TW101133119 A TW 101133119A TW 201326043 A TW201326043 A TW 201326043A
Authority
TW
Taiwan
Prior art keywords
reactor
low
boiling
tcs
products
Prior art date
Application number
TW101133119A
Other languages
English (en)
Chinese (zh)
Inventor
Harald Seiler
Norbert Schladerbeck
Horst Mertsch
Frank Becker
Original Assignee
Evonik Degussa Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa Gmbh filed Critical Evonik Degussa Gmbh
Publication of TW201326043A publication Critical patent/TW201326043A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
    • C01B33/10763—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
TW101133119A 2011-09-14 2012-09-11 低沸點化合物於氯矽烷製程中之用途 TW201326043A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201110082662 DE102011082662A1 (de) 2011-09-14 2011-09-14 Verwertung niedrigsiedender Verbindungen in Chlorsilan-Prozessen

Publications (1)

Publication Number Publication Date
TW201326043A true TW201326043A (zh) 2013-07-01

Family

ID=46785410

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101133119A TW201326043A (zh) 2011-09-14 2012-09-11 低沸點化合物於氯矽烷製程中之用途

Country Status (3)

Country Link
DE (1) DE102011082662A1 (de)
TW (1) TW201326043A (de)
WO (1) WO2013037639A1 (de)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3704104A (en) * 1970-06-01 1972-11-28 Texas Instruments Inc Process for the production of trichlorosilane
DE102006009954A1 (de) 2006-03-03 2007-09-06 Wacker Chemie Ag Wiederverwertung von hochsiedenden Verbindungen innerhalb eines Chlorsilanverbundes
DE112008002299T5 (de) 2007-08-29 2010-07-22 Dynamic Engineering, Inc., Sturgis Verfahren zur Herstellung von Trichlorsilan
US20120082609A1 (en) * 2010-10-01 2012-04-05 Mitsubishi Materials Corporation Method for producing trichlorosilane with reduced boron compound impurities

Also Published As

Publication number Publication date
WO2013037639A1 (de) 2013-03-21
DE102011082662A1 (de) 2013-03-14

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