TW201324888A - The organic light-emitting diode and display comprising the same - Google Patents

Abstract

The invention provides an organic light-emitting diode and display comprising the same. The organic light-emitting diode includes: a substrate, wherein the substrate comprises a pixel electrode region and an auxiliary electrode region; a plurality of isolation structures formed between the pixel electrode region and the auxiliary electrode region; wherein the pixel electrode includes: a first electrode formed on the substrate; an organic layer formed on the first electrode; a second electrode formed on the organic layer; wherein the auxiliary electrode region includes: an auxiliary electrode formed on the substrate; a shielding structure formed on the auxiliary electrode and the isolation structures, wherein the shielding structure covers a portions of the auxiliary electrode, and the second electrode is electrically connected to the auxiliary electrode.

Description

Organic light-emitting diode and organic light-emitting diode display thereof

The present invention relates to an organic light-emitting diode, and more particularly to an organic light-emitting diode that avoids voltage drop and an organic light-emitting diode display thereof.

The organic light-emitting diode is widely used in flat panel displays because of its high brightness, lightness, thinness, no backlight, low power consumption, and the like.

Referring to FIG. 1A, a top view of a conventional organic light emitting diode 10 is shown, which includes a display area 12a and a peripheral area 12b located at the periphery of the display area 12a. The auxiliary electrode vias 14 are located in the peripheral area 12b for The upper electrode (not shown) of the display area 12a is electrically connected. The power source is input from the auxiliary electrode via hole 14 of the peripheral region 12b, and then transferred to the display region 12a. However, due to the long distance of the transmission distance, uneven current is generated, thereby causing a problem of voltage drop and uneven brightness. For large displays, the pressure drop problem is even more pronounced.

In order to solve the problem of voltage drop and brightness unevenness, please refer to the top view of the conventional organic light emitting diode 10 of FIG. 1B, and the auxiliary electrode bare region 16 is disposed in the display region 12a and located in the adjacent pixel electrode 18 between. However, in order to prevent the organic layer from shielding the position of the auxiliary electrode bare region 16, it is necessary to provide a precise metal mask 17, which is not easy to manufacture, high in cost and difficult to align, and produces a large-sized display, and a large-sized metal cover. The cover is prone to problems with bending.

Therefore, there is an urgent need in the industry to propose an organic light-emitting diode which can solve the above-mentioned problems.

The present invention provides an organic light emitting diode (OLED), comprising: a substrate, wherein the substrate includes a pixel electrode region and an auxiliary electrode region; and an insulating layer formed on the pixel electrode region and the auxiliary electrode region And wherein the pixel electrode region comprises: a first electrode formed on the substrate; an organic layer formed on the first electrode; and a second electrode formed on the organic layer; wherein The auxiliary electrode region includes: an auxiliary electrode formed on the substrate; a shielding structure formed on the auxiliary electrode or above the insulating layer, wherein the shielding structure covers a portion of the auxiliary electrode, and the The two electrodes are electrically connected to the auxiliary electrode.

The present invention further provides an organic light emitting diode (OLED) display, comprising: a first substrate disposed opposite to a second substrate; and an organic light emitting diode according to the present invention disposed on the first substrate and the Between the second substrates.

The above and other objects, features and advantages of the present invention will become more <RTIgt;

2 is a plan view of a top emission organic light emitting diode 20 of the present invention, and FIGS. 3A-3D are a series of cross-sectional views taken along line AA' of FIG. 2, showing the top emission of the present invention (top) Emission) method of producing organic light-emitting diodes. First, please refer to FIG. 3A to provide a substrate 101. In the passive array organic light emitting diode display, the substrate 101 is made of a general glass substrate, and in another embodiment, it may be a plastic substrate. In the active array organic light emitting diode display, the substrate 101 is a thin film transistor (TFT) substrate, and the substrate material may be a glass substrate or a plastic substrate.

Next, a planarization layer 102 is formed on the substrate 101, and then a conductive layer is formed on the planarization layer 102, and then the first electrode 104 and the auxiliary electrode 134 are formed through a patterning process. In the active array organic light emitting diode display, the first electrode 104 is electrically connected to a thin film transistor (TFT) (not shown), and the thin film transistor TFT is used to control each pixel.

Then, the photoresist layer is coated and patterned on the first electrode 104 and the auxiliary electrode 134, and the patterned photoresist layer forms an insulating layer 120 for defining the pixel electrode region 102a and the auxiliary layer. The electrode region, in which the region not covered by the insulating layer 120 is defined as the auxiliary electrode bare region 102b. In the embodiment of the present invention, the photoresist layer is composed of a positive photoresist. Therefore, after the patterning step, the trapezoidal-shaped insulating layer 120 is obtained, that is, the insulating layer 120 has an upper surface. With the lower surface, and from the cross-sectional view, the length of the upper surface is shorter than the length of the lower surface.

It should be noted that in the pixel electrode region 102a, the first electrode 104 is formed on the substrate 101; in the auxiliary electrode bare region 102b, the auxiliary electrode 134 is formed on the substrate 101. The first electrode 104 may be a single layer or a multilayer structure, which may include a metal layer, a transparent conductive layer, or a combination thereof. The auxiliary electrode 134 may be a single layer or a plurality of layers, and may also include a metal layer, a transparent conductive layer, or a combination thereof. The first electrode 104 and the auxiliary electrode 134 may be formed by the same step or different steps, in other words, the two are composed of the same or different materials.

In an embodiment of the invention, the first electrode 104 includes a first layer 104a, a second layer 104b and a third layer 104c, wherein the first layer 104a and the third layer 104c are composed of a transparent conductive layer, and the second layer 104b It consists of a metal layer. Similarly, the auxiliary electrode 134 includes a first layer 134a, a second layer 134b, and a third layer 134c, wherein the first layer 134a and the third layer 134c are composed of a transparent conductive layer, and the second layer 134b is composed of a metal layer.

The above metal layer includes aluminum (Al), calcium (Ca), silver (Ag), nickel (Ni), chromium (Cr), titanium (Ti), magnesium (Mg), tungsten (W), molybdenum (Mo) or The above alloy. The transparent conductive layer includes indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (CTO), and aluminum zinc oxide (AZO). , indium tin zinc oxide (ITZO), zinc oxide, cadmium oxide (CdO), hafnium oxide (HfO), indium gallium zinc oxide (InGaZnO) ), indium gallium zinc magnesium oxide (InGaZnMgO), indium gallium magnesium oxide (InGaMgO) or indium gallium aluminum oxide (InGaAlO).

Thereafter, referring to FIG. 3B, a shielding structure 136 is formed on the auxiliary electrode 134. The shielding structure 136 has an upper surface 136a and a lower surface 136b, and the length W _{1 of the} upper surface 136a is greater than the length W _{2 of the} lower surface 136b, that is, The shielding structure 136 has an inverted trapezoidal shape. In addition, the shielding structure 136 and the auxiliary electrode 134 have an angle α of less than 90 degrees.

Thereafter, referring to FIG. 3C, an organic layer 106 is formed over the first electrode 104, wherein the organic layer 106 extends from the pixel electrode region 102a through the insulating layer 120 to the auxiliary electrode bare region 102b. The manner in which the organic layer 106 is formed is, for example, an evaporation method. The organic layer 106 may be composed of a part or all of the following material layers: a hole injection layer (HIL), a hole transporting layer (HTL), a light emitting layer, and an electron transport layer. (electron transporting layer) and electron injection layer.

Next, a first layer 108a of the second electrode 108 is formed over the organic layer 106, wherein the first layer 108a of the second electrode 108 extends from the pixel electrode region 102a through the insulating layer 120 to the auxiliary electrode bare region 102b. Thereafter, referring to FIG. 3D, a second layer 108b of the second electrode 108 is formed over the first layer 108a. Here, the structure of the organic light emitting diode 300 of the present invention is completed.

In the embodiment of the present invention, the first layer 108a of the second electrode 108 is composed of a metal layer, which can be formed by evaporation; the second layer 108b is composed of a transparent conductive layer, which can be sputtered (sputter) )form.

It should be noted that, since the organic layer 106 and the first layer 108a of the second electrode 108 are formed by an evaporation method, when the vapor deposition is performed, the chamber pressure is about 10 ^-3 -10 ^-5 Pa, and the gas in the cavity The Mean free path is about 600-7000 cm, and the distance between the substrate 101 and the evaporation source is about 10-20 cm, which is much shorter than the free diameter length. Therefore, the vapor deposition particles are exposed before the vapor deposition target is encountered. The probability of collision is very small, and the vapor deposition particles are almost straight forward, so when the shield is encountered before the average free diameter, the vapor deposition particles that are still moving straight forward are blocked and are not easily formed under the shield. Therefore, when the organic layer 106 and the first layer 108a of the second electrode 108 are vapor-deposited, due to the principle of the average free path (in the illustration of the embodiment, the finger moves nearly parallel to the Z-axis direction. In other embodiments, The position of the evaporation source is different and moves along different coordinate axes or other directions.), it is shielded by the upper surface of the shielding structure 136, and is not easily formed vertically below the shielding structure 136 (in this embodiment, it refers to the parallel Z-axis direction). In addition, the first layer 108a of the organic layer 106 and the second electrode 108 does not completely cover the auxiliary electrode 134 due to the inverted trapezoidal shape such as the shielding structure 106.

Thereafter, when the second layer 108b of the second electrode 108 is formed, since the cavity pressure is about 0.1-1 Pa when sputtering is performed, the average free path of the gas in the cavity is about 0.5-7 cm, and the substrate 101 is splashed. The distance from the plating source is about 10-20 cm, which is much longer than the free path length. Therefore, the sputtered particles have changed direction of travel due to collision with each other before reaching the sputtering target, so the sputter particles can bypass the shield while still Can be formed under the mask, so when the second layer 108b of the second electrode 108 is sputtered, the second layer 108b can bypass the shielding structure 106 and still form on the auxiliary electrode 134 below it and assist The electrode 134 is electrically connected.

Referring to FIG. 4A, the shielding structure or the electrode layer structure other than the substrate 101 is omitted, and only the substrate 101 as the reference for adjusting the angle is shown. In another embodiment, the sputtering angle θ ₁ between the sputtering source 450 of the second layer 108b and the substrate 101 may be adjusted when the second layer 108b of the second electrode 108 is sputtered, so that the second electrode 108 is The second layer 108b can be easily formed under the shielding structure 106 and electrically connect the second electrode 108 to the auxiliary electrode 134, wherein θ ₁ is an acute angle (0 < θ _{1 <} 90).

It should be noted that in another embodiment, the second electrode of the single layer may also be formed by sputtering. Since the organic layer does not completely cover the auxiliary electrode, the second electrode of the single layer may be formed in the portion. Above the auxiliary electrode and electrically connected to the auxiliary electrode.

In addition, in another embodiment, referring to FIG. 4B, when the first layer 108a of the second electrode is vapor-deposited, the evaporation angle between the evaporation source 452 of the first layer 108a and the substrate 101 can be adjusted. θ ₂ (θ ₂ <θ ₁ ), so that the first layer 108a of the second electrode 108 is also easily deposited on the auxiliary electrode 134, and the second electrode 108 is electrically connected to the auxiliary electrode 134. Wherein, the angular range of θ ₁ and θ ₂ is an acute angle (0 < θ ₁ < 90, 0 < θ ₂ < 90 and θ ₂ < θ ₁ ).

Therefore, by adjusting the angle of the sputtering source 450 or the evaporation source 452, the electrical connection between the first layer 108a of the second electrode and the second layer 108b and the auxiliary electrode 134 is increased, and the voltage drop can be greatly improved. effect.

The embodiment of the 3A-3D of the present invention is a top emission organic light emitting diode. In this embodiment, the organic layer 106 and the second electrode 108 are formed by an inverted trapezoidal shape such as the shielding structure 136. The first layer 108a does not completely cover the auxiliary electrode, and thus can be electrically connected to the auxiliary electrode 134 through the second layer 108b of the second electrode to achieve the effect of reducing the voltage drop of the second electrode 108.

However, the organic light-emitting diode of the present invention is not limited to application to top emission, and can also be applied to a bottom-emitting organic light-emitting diode. The organic light emitting diode emitted at the bottom can form a thick second electrode on the organic layer, and the second electrode can be formed on the auxiliary electrode by the special shape of the shielding structure. And electrically connected with the auxiliary electrode to achieve the effect of reducing the voltage drop of the second electrode. Regardless of whether the organic light emitting diode is of a top or bottom emission type, at least one of the first electrode and the second electrode is a transparent electrode, and the other is a transparent or opaque electrode to assist light emission.

It should be noted that in the first embodiment of the present invention, the shielding structure 136 has a lower height than the insulating layer 120. In the second embodiment, please refer to FIG. 5, in which the shielding structure 136 has a higher height than the insulating layer 120. Therefore, regardless of whether the height of the shielding structure 136 is higher than, equal to, or lower than the insulating layer 120, as long as the upper surface length of the shielding structure 136 is greater than the lower surface length, and the shielding structure 136 covers a portion of the auxiliary electrode 134 to avoid the organic layer 106. It is within the scope of the present invention to completely cover the auxiliary electrode 134 and to electrically connect the second electrode 108 to the auxiliary electrode 134 to reduce the low pressure drop when the second electrode 108 is subsequently formed.

Referring to Fig. 6, there is shown a third embodiment of the shielding structure of the present invention, wherein the same reference numerals as in Fig. 3D represent the same elements, wherein the shielding structure 138 includes a first layer type trapezoidal structure 138a and a second layer type inverted trapezoid Structure 138b, the two layers form a double trapezoidal shape, which can also avoid the subsequent organic layer (not shown in the figure, refer to FIG. 3D) completely cover the auxiliary electrode 134, so that the subsequent second electrode (not shown in the figure, can be referred to FIG. 3D is electrically connected to the auxiliary electrode 134 to achieve the effect of reducing the voltage drop of the second electrode (not shown in the drawing, refer to FIG. 3D).

Referring to Fig. 7, there is shown a fourth embodiment of the shielding structure of the present invention, wherein the same reference numerals as in Fig. 6 represent the same elements, wherein the shielding structure 138 has a higher height than the insulating layer 120.

Please refer to FIG. 8A-8B, which shows a fifth embodiment of the shielding structure of the present invention, wherein FIG. 8A is a top view, and FIG. 8B is a cross-sectional view taken along line BB' of FIG. 8A. The same figures in the 3D diagram represent the same components. In the fifth embodiment, the shielding structure 140 is formed on the insulating layer 120, and the shielding structure 140 also has an inverted trapezoidal shape, so that the subsequent organic layer (not shown in the drawing, refer to FIG. 3D) can be avoided completely. The auxiliary electrode 134 is covered so that the subsequent second electrode (not shown in the drawing, refer to FIG. 3D) is electrically connected to the auxiliary electrode 134 to reduce the pressure of the second electrode (not shown in the drawing, refer to FIG. 3D). The effect of a voltage drop.

Referring to Figures 9A-9F, there is shown a top view of an embodiment of the organic light emitting diode of the present invention having different patterns of auxiliary electrode exposed regions including an active region 612a and a peripheral region 612b located at the periphery of the active region 612a.

Please refer to FIG. 10A-10C for a plan view showing the line configuration of the auxiliary electrode 134 of the present invention. It should be noted that in the 10A-10C diagram, the auxiliary electrode 134 is located in the display area 12a, and the auxiliary electrode 134 is electrically connected to the auxiliary electrode via hole of the peripheral area 12b (not shown, similar to FIG. 1A). The auxiliary electrode via hole 14) is electrically connected to an external driving circuit or a power source (not shown).

In Fig. 10A, the auxiliary electrode 134 is arranged along each of the auxiliary electrode circuit patterns of a mesh structure arranged in a column and row. Only the embodiment in which the auxiliary electrode bare region 102b is arcuate is illustrated in the drawing, and it is not necessary to provide the auxiliary electrode bare region 102b at the intersection of each auxiliary electrode 134. In other embodiments, the auxiliary electrode bare region 102b may be in the form of a block, an arc, or an elongated strip.

In Fig. 10B, the auxiliary electrode 134 is arranged along each of the auxiliary electrode circuit patterns arranged at intervals of a plurality of columns. Only the embodiment in which the auxiliary electrode bare region 102b is arcuate is illustrated in the drawing. In other embodiments, the auxiliary electrode bare region 102b may be in the form of a block, an arc, or an elongated strip.

In Fig. 10C, the auxiliary electrode 134 is arranged along each of the auxiliary electrode circuit patterns arranged in a plurality of rows. Only the embodiment in which the auxiliary electrode bare region 102b is arcuate is illustrated in the drawing. In other embodiments, the auxiliary electrode bare region 102b may be in the form of a block, an arc, or an elongated strip.

In Fig. 9A, the auxiliary electrode bare region 102b has a circular arc shape, and it is not formed in each of the pixel electrode regions 102a, and one auxiliary electrode bare region 102b is disposed apart from one or several pixel electrode regions.

In another embodiment, the auxiliary electrode bare region 102b may be formed beside each of the pixel electrode regions 102a. The auxiliary electrode under the auxiliary electrode bare region 102b can select different auxiliary electrode line patterns according to the configuration.

In an embodiment, when the auxiliary electrode bare region is formed beside each pixel electrode region, the auxiliary electrode line pattern of the mesh pattern of FIG. 10A may be selected, and the 10B or 10C chart may also be selected. Auxiliary electrode pattern.

In another embodiment, when an auxiliary electrode bare region 102b is disposed when the auxiliary electrode bare region is separated by one or several pixel electrode regions, the mesh pattern of FIG. 10A may be selected, and the 10th or the The auxiliary electrode line pattern of the 10C diagram.

Therefore, the spacing of the auxiliary electrode patterns can be set along with the planning of the exposed area of the auxiliary electrode. Therefore, the auxiliary electrode pattern does not necessarily need to be provided with an auxiliary electrode line between each pixel, and one or several pixels can be spaced apart. Set the traces and select any auxiliary electrode exposed area with any auxiliary electrode circuit diagram as needed for the design.

In FIG. 9B, the auxiliary electrode bare region 102b is a long trench structure and is located beside each row of pixel electrode regions 102a, and the shielding structure 136 also has a strip structure.

In Fig. 9C, an auxiliary electrode bare region 102b having a long trench between every N rows of pixel regions 102a, where N is greater than or equal to 1.

In FIG. 9D, the auxiliary electrode bare region 102b having a long trench between every N rows of pixel regions 102a, wherein N is greater than or equal to 1, and the shielding structure 136 is a discontinuous block. Structure or arc-shaped structure, only the block structure diagram is shown on the figure.

In FIG. 9E, the auxiliary electrode bare region 102b is a long trench structure and is located beside each row of pixel electrode regions 102a, and the shielding structure 136 is a discontinuous block structure or an arc-shaped structure. Only a block structure diagram is shown on the figure.

In FIG. 9F, the auxiliary electrode bare region 102b is a long trench structure and is located beside each column pixel electrode region 102a, and the shielding structure 136 also has a strip structure. In another embodiment, the auxiliary electrode bare region 102b may be provided with a shielding structure 136 adjacent to the pixel electrode region 102a of one row or several rows, and the shielding structure 136 also has a strip structure. Only one of the embodiments is shown in the figure, and the row can also be adjusted correspondingly with reference to the row form of FIGS. 9A to 9E.

As apparent from the above discussion, the auxiliary electrode line patterns of the 10A or 10C drawings can be arbitrarily selected from the 9A to 9D. In the embodiment of the ninth Ff or other adjustment of the column, the auxiliary electrode line pattern of the 10A or 10B can be arbitrarily selected.

By the specific shape and position (formed on or above the auxiliary layer) of the shielding structure of the present invention, the organic layer does not completely cover the auxiliary electrode, and the second electrode is electrically connected to the auxiliary electrode to reduce The effect of the second electrode voltage drop, which in turn improves the uniformity of the brightness of the light-emitting diode.

In addition, the present invention further provides an organic light emitting diode display. Referring to FIG. 11, the first substrate 710 and the second substrate 720 are oppositely disposed; and the organic light emitting diode of the present invention (for example, the numeral 300 of FIG. 3D) Between the first substrate 710 and the second substrate 720, wherein the first substrate 710 and the second substrate 720 are a thin film transistor substrate, and the other is a color filter substrate, a touch panel or Package substrate.

While the invention has been described above in terms of several preferred embodiments, it is not intended to limit the scope of the present invention, and any one of ordinary skill in the art can make any changes without departing from the spirit and scope of the invention. And the scope of the present invention is defined by the scope of the appended claims.

10, 20. . . Organic light-emitting diode

12a. . . Display area

12b. . . Surrounding area

14. . . Auxiliary electrode via

16. . . Auxiliary electrode bare zone

17. . . Metal mask

18. . . Pixel electrode

101. . . Substrate

102. . . Flat layer

102a. . . Pixel electrode area

102b. . . Auxiliary electrode bare zone

104. . . First electrode

104a. . . First layer of the first electrode

104b. . . Second layer of the first electrode

104c. . . The third layer of the first electrode

106. . . Organic layer

108. . . Second electrode

108a. . . First layer of the second electrode

108b. . . Second layer of the second electrode

120. . . Insulation

134. . . Auxiliary electrode

134a. . . First layer of auxiliary electrode

134b. . . Second layer of auxiliary electrode

134c. . . Third layer of auxiliary electrode

136. . . Shading structure

136a. . . Shielding surface

136b. . . Under the shield structure

138. . . Shading structure

138a. . . First layer ladder structure

138b. . . Second layer inverted ladder structure

140. . . Shading structure

W ₁ . . . The length of the surface above the shielding structure

W ₂ . . . The length of the surface below the shielding structure

300. . . Organic light-emitting diode

450. . . Sputter source

452. . . Evaporation source

612a. . . Active zone

612b. . . Surrounding area

710. . . First substrate

720. . . Second substrate

1A-1B is a series of top views for illustrating the structure of a conventional organic light emitting diode.

Fig. 2 is a plan view showing the structure of the organic light emitting diode of the present invention.

3A-3D are a series of cross-sectional views for explaining the method of fabricating the organic light-emitting diode of the present invention.

4A-4B is a series of cross-sectional views for illustrating the angle between the evaporation source (or sputtering source) of the present invention and the substrate.

Figure 5 is a cross-sectional view showing a second embodiment of the shield structure of the present invention.

Figure 6 is a cross-sectional view for explaining a third embodiment of the shielding structure of the present invention.

Figure 7 is a cross-sectional view showing a fourth embodiment of the shielding structure of the present invention.

Fig. 8A is a plan view showing a fifth embodiment of the shielding structure of the present invention.

Figure 8B is a cross-sectional view for explaining a fifth embodiment of the shielding structure of the present invention.

Figures 9A-9F are a series of top views for illustrating the organic light emitting diode of the present invention.

10A-10C are a series of top views for illustrating the line configuration of the auxiliary electrode of the present invention.

Figure 11 is a cross-sectional view for explaining the organic light emitting diode display of the present invention.

101. . . Substrate

102. . . Flat layer

102a. . . Pixel electrode area

102b. . . Auxiliary electrode bare zone

104. . . First electrode

104a. . . First layer of the first electrode

104b. . . Second layer of the first electrode

104c. . . The third layer of the first electrode

106. . . Organic layer

108. . . Second electrode

108a. . . First layer of the second electrode

108b. . . Second layer of the second electrode

120. . . Insulation

134. . . Auxiliary electrode

134a. . . First layer of auxiliary electrode

134b. . . Second layer of auxiliary electrode

134c. . . Third layer of auxiliary electrode

136. . . Shading structure

300. . . Organic light-emitting diode

Claims (19)

An organic light emitting diode (OLED) comprising: a substrate, wherein the substrate comprises a pixel electrode region and an auxiliary electrode region; and an insulating layer formed between the pixel electrode region and the auxiliary electrode region; The pixel electrode region includes: a first electrode formed on the substrate; an organic layer formed on the first electrode; a second electrode formed on the organic layer; wherein the auxiliary electrode The area includes: an auxiliary electrode formed on the substrate; a shielding structure formed on the upper surface of the auxiliary electrode or the insulating layer, wherein the shielding structure covers the auxiliary electrode, and the second electrode and the auxiliary electrode Electrical connection. The organic light emitting diode (OLED) according to claim 1, wherein the shielding structure has an upper surface and a lower surface, and the length of the upper surface is greater than the length of the lower surface. The organic light emitting diode (OLED) of claim 1, wherein the second electrode extends from the pixel electrode region through the insulating layer to the auxiliary electrode region. The organic light emitting diode (OLED) according to claim 1, wherein the shielding structure comprises an inverted trapezoidal or double trapezoidal shape. The organic light emitting diode (OLED) of claim 1, wherein the insulating layer comprises a trapezoidal shape. The organic light emitting diode (OLED) according to claim 1, wherein the shielding structure and the auxiliary electrode have an angle of less than 90 degrees. The organic light emitting diode (OLED) of claim 1, wherein the shielding structure has a height greater than, equal to, or less than the insulating layer. The organic light emitting diode (OLED) according to claim 1, wherein the auxiliary electrode and the first electrode are composed of the same or different materials. The organic light emitting diode (OLED) of claim 1, wherein the first electrode comprises a metal layer, a transparent conductive layer or a combination thereof. The organic light emitting diode (OLED) according to claim 9, wherein the metal layer comprises aluminum (Al), calcium (Ca), silver (Ag), nickel (Ni), chromium (Cr), titanium (Ti), magnesium (Mg), tungsten (W), molybdenum (Mo) or the above alloy. The organic light emitting diode (OLED) according to claim 9, wherein the transparent conductive layer comprises indium tin oxide (ITO), indium zinc oxide (IZO), cadmium oxide. Cadmium tin oxide (CTO), aluminum zinc oxide (AZO), indium tin zinc oxide (ITZO), zinc oxide, cadmium oxide (CdO), oxidation Hafnium oxide (HfO), indium gallium zinc oxide (InGaZnO), indium gallium zinc magnesium oxide (InGaZnMgO), indium gallium magnesium oxide (InGaMgO) or oxidation Indium gallium aluminum oxide (InGaAlO). The organic light emitting diode (OLED) according to claim 1, wherein at least one of the first electrode and the second electrode is a transparent electrode, and the other is a transparent or opaque electrode. The organic light emitting diode (OLED) according to claim 1, wherein the organic layer is composed of all or a part of materials: a hole injection layer (HIL) and a hole transport layer. (hole transporting layer, HTL), a light emitting layer, an electron transporting layer, and an electron injection layer. The organic light emitting diode (OLED) according to claim 1, wherein the organic layer extends from the pixel electrode region through the insulating layer to the auxiliary electrode region, and the organic layer does not completely cover the auxiliary layer. electrode. The organic light emitting diode (OLED) according to claim 1, wherein the auxiliary electrode region is a contact hole. The organic light emitting diode (OLED) according to claim 1, wherein the auxiliary electrode region is a rectangular-shaped trench. The organic light emitting diode (OLED) according to claim 16, wherein the stripe structure is present between every N rows of pixel electrode regions, wherein N is greater than or equal to 1. An organic light emitting diode (OLED) display, comprising: a first substrate opposite to a second substrate; and an organic light emitting diode according to claim 1 is disposed on the first substrate Between the second substrates. The organic light emitting diode (OLED) display of claim 18, wherein the first substrate and the second substrate are a thin film transistor substrate, and the other is a color filter substrate and a touch panel. Or package the substrate.