TW201315562A - Laser processing control device and laser processing control method - Google Patents
Laser processing control device and laser processing control method Download PDFInfo
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- 239000000284 extract Substances 0.000 description 6
- 238000005553 drilling Methods 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical class [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/034—Observing the temperature of the workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/042—Automatically aligning the laser beam
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/101—Scanning systems with both horizontal and vertical deflecting means, e.g. raster or XY scanners
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Abstract
Description
本發明係關於一種雷射加工控制裝置及雷射加工控制方法,其係控制雷射光對被處理基板之照射位置。 The present invention relates to a laser processing control device and a laser processing control method for controlling an irradiation position of a laser beam to a substrate to be processed.
在印刷線路板進行開孔加工之雷射加工裝置,係例如搭載電流掃描器(Galvano scanner)與f θ透鏡(f θ lens)。在此種的雷射加工裝置中,雷射傳播時其一部份被f θ透鏡吸收,而產生f θ透鏡的溫度上昇。而且,伴隨溫度上昇f θ透鏡的折射率會產生變化,故雷射光在f θ透鏡折射,而使雷射光的照射位置產生變化。因此,一般而言係量測f θ透鏡的溫度,根據該溫度而藉由電流掃描器校正雷射照射位置。 A laser processing apparatus for performing hole drilling on a printed wiring board is, for example, a Galvano scanner and an f θ lens (f θ lens). In such a laser processing apparatus, a portion of the laser is absorbed by the f θ lens while the laser propagates, and the temperature of the f θ lens rises. Further, as the temperature rises, the refractive index of the lens changes, so that the laser light is refracted by the f θ lens, and the irradiation position of the laser light is changed. Therefore, in general, the temperature of the f θ lens is measured, and the laser irradiation position is corrected by the current scanner according to the temperature.
例如,在專利文獻1的雷射加工裝置中,在f θ透鏡的側面部設置溫度感測器,根據由溫度感測器所得的量測溫度,而藉由電流掃描器校正雷射光照射位置。 For example, in the laser processing apparatus of Patent Document 1, a temperature sensor is provided on a side surface portion of the f θ lens, and the laser light irradiation position is corrected by a current scanner based on the measured temperature obtained by the temperature sensor.
專利文獻1:日本特開2003-290944號公報。 Patent Document 1: Japanese Laid-Open Patent Publication No. 2003-290944.
然而,在前述習知技術中,由溫度感測器進行的量測位置係在f θ透鏡的端部,故由於熱傳導等之影響難以瞬時並且正確地量測f θ透鏡之中央部份的溫度。此為,因 在f θ透鏡內具有熱傳導,故會產生量測溫度的時間差。因此,在根據f θ透鏡之端部的量測溫度之照射位置的校正,就位置偏移之對策而言會有不盡妥適的問題。 However, in the aforementioned prior art, the measurement position by the temperature sensor is at the end of the f θ lens, so it is difficult to instantaneously and correctly measure the temperature of the central portion of the f θ lens due to the influence of heat conduction or the like. . This is because There is heat conduction in the f θ lens, which causes a time difference in the measured temperature. Therefore, in the correction of the irradiation position of the measured temperature based on the end portion of the f θ lens, there is a problem that the positional deviation is not appropriate.
本發明為有鑑於前述之問題所完成者,目的係為獲得能夠正確地校正雷射光之照射位置的一種雷射加工控制裝置及雷射加工控制方法。 The present invention has been made in view of the above problems, and an object thereof is to obtain a laser processing control device and a laser processing control method capable of accurately correcting an irradiation position of laser light.
為解決前述課題,並達成目的,本發明係具備:脈衝檢測部,係用以檢測雷射振盪器對被處理基板側射出脈衝雷射(pulse laser)的射出時序(timing);乘算部,係乘算在預定時間內所射出之前述脈衝雷射的各能量(energy)之量而計算能量乘算量;校正量計算部,係計算與前述能量乘算量相對應之位置偏移校正量,以作為在照射於前述被處理基板的脈衝雷射發生位置偏移時,將前述脈衝雷射的照射位置校正至所欲位置之校正量;以及控制部,係對使用前述脈衝雷射加工前述被處理基板的加工部,以根據前述位置偏移校正量校正前述脈衝雷射的照射位置之方式進行控制。 In order to solve the above problems and achieve the object, the present invention provides a pulse detecting unit for detecting an emission timing of a pulse laser emitted from a laser oscillator on a substrate side to be processed, and a multiplication unit. Calculating an energy multiplication amount by multiplying an amount of energy of the pulse laser emitted from the predetermined time within a predetermined time; the correction amount calculation unit calculates a position offset correction amount corresponding to the energy multiplication amount a correction amount for correcting an irradiation position of the pulse laser to a desired position when the pulse laser is irradiated to the substrate to be processed, and a control unit for processing the aforementioned pulse laser processing The processed portion of the substrate to be processed is controlled such that the irradiation position of the pulse laser is corrected in accordance with the positional shift correction amount.
根據本發明,因以對應於在預定時間內所射出之脈衝雷射的能量乘算量的位置偏移校正量校正脈衝雷射的照射位置,故達到能夠正確地校正雷射光的照射位置之效果。 According to the present invention, since the irradiation position of the pulse laser is corrected by the positional shift correction amount corresponding to the energy multiplication amount of the pulse laser emitted within the predetermined time, the effect of accurately correcting the irradiation position of the laser light is achieved. .
以下根據圖式詳細說明本發明之實施形態的雷射加工 控制裝置及雷射加工控制方法。另外,本發明並不受該實施形態之限制。 Hereinafter, the laser processing of the embodiment of the present invention will be described in detail based on the drawings. Control device and laser processing control method. Further, the present invention is not limited by the embodiment.
第1圖係為顯示實施形態之雷射加工裝置的構成圖。雷射加工裝置100,係為藉由照射雷射光L(脈衝雷射光)在屬於被處理基板之基板(工件)4進行雷射開孔加工的裝置。本實施形態之雷射加工裝置100,係一邊校正起因於f θ透鏡34的溫度上昇等之雷射光照射位置的位置偏移,一邊進行對基板4的雷射開孔加工。 Fig. 1 is a view showing the configuration of a laser processing apparatus according to an embodiment. The laser processing apparatus 100 is a device for performing laser drilling on a substrate (workpiece) 4 belonging to a substrate to be processed by irradiating laser light L (pulse laser light). The laser processing apparatus 100 of the present embodiment performs laser drilling processing on the substrate 4 while correcting the positional shift of the laser light irradiation position due to the temperature rise of the f θ lens 34.
雷射加工裝置100,係具備雷射振盪器1、雷射加工部3、以及雷射加工控制裝置2,該雷射振盪器1係振盪雷射光L,而該雷射加工部3係進行基板4的雷射加工。雷射振盪器1係振盪雷射光L,並送至雷射加工部3。 The laser processing apparatus 100 includes a laser oscillator 1, a laser processing unit 3, and a laser processing control device 2 that oscillates laser light L, and the laser processing unit 3 performs a substrate. 4 laser processing. The laser oscillator 1 oscillates the laser light L and sends it to the laser processing unit 3.
雷射加工部3係具備:電流鏡(galvano mirror)35X、35Y、電流掃描器(galvano scanner)36X、36Y、f θ透鏡(聚光透鏡)34、XY工作台(加工工作台)32、以及溫度檢測部(溫度感測器)38。 The laser processing unit 3 includes a galvano mirror 35X and 35Y, a galvano scanner 36X, 36Y, an f θ lens (condensing lens) 34, an XY table (processing table) 32, and Temperature detecting unit (temperature sensor) 38.
電流掃描器36X、36Y係具有使雷射光L的軌道變化而使照射位置對基板4移動的功能,且將雷射光L在設定於基板4之各加工區(電流區(Galvano area))內以二維方式進行掃瞄。電流掃描器36X、36Y係為了於X-Y方向進行掃瞄雷射光L,而使電流鏡35X、35Y朝預定的角度旋轉。 The current scanners 36X and 36Y have a function of changing the orbit of the laser light L to move the irradiation position to the substrate 4, and the laser light L is set in each processing region (a current region (Galvano area)) of the substrate 4 Scan in two dimensions. The current scanners 36X and 36Y rotate the current mirrors 35X and 35Y at a predetermined angle in order to scan the laser light L in the X-Y direction.
電流鏡35X、35Y係使雷射光L反射並朝預定的角度偏向。電流鏡35X係使雷射光L朝X方向偏向,而電流鏡35Y 係使雷射光L朝Y方向偏向。 The current mirrors 35X and 35Y reflect the laser light L and are deflected toward a predetermined angle. The current mirror 35X biases the laser light L toward the X direction, and the current mirror 35Y The laser light L is deflected in the Y direction.
f θ透鏡34係具有遠心(telecentric)性的透鏡。f θ透鏡34係使雷射光L朝垂直於基板4之主面的方向偏向,並且使雷射光L聚光(照射)至基板4的加工位置(孔位置Hx)。 The f θ lens 34 is a lens having a telecentricity. The f θ lens 34 deflects the laser light L in a direction perpendicular to the main surface of the substrate 4, and condenses (illuminates) the laser light L to the processing position (hole position Hx) of the substrate 4.
基板4係為印刷配線板等之加工對象物,在複數個部位進行開孔加工。基板4係例如做成銅箔(導體層)、樹脂(絕緣層)、銅箔(導體層)的三層構造。 The substrate 4 is an object to be processed such as a printed wiring board, and is subjected to drilling processing at a plurality of locations. The substrate 4 is, for example, a three-layer structure of a copper foil (conductor layer), a resin (insulating layer), and a copper foil (conductor layer).
XY工作台32係載置基板4,並且藉由未圖示之馬達的驅動在XY平面內移動。藉此,XY工作台32係使基板4在面內方向移動。 The XY stage 32 mounts the substrate 4 and moves in the XY plane by driving of a motor (not shown). Thereby, the XY table 32 moves the substrate 4 in the in-plane direction.
在不使XY工作台32移動之情形下藉由電流(galvano)機構(電流掃描器36X、36Y、電流鏡35X、35Y)的動作,能夠進行雷射加工的範圍(可掃瞄區域)即為電流區(掃描區)。在雷射加工裝置100中,係使XY工作台32在XY平面內移動後,藉由電流掃描器36X、36Y進行二維掃瞄雷射光L。XY工作台32係以使各電流區的中心在f θ透鏡34的中心的正下方(電流(galvano)原點)的方式順序地移動。電流機構係以使設定於電流區內的各孔位置Hx順序地成為雷射光L之照射位置的方式動作。藉由XY工作台32之電流區間的移動、以及藉由電流機構的在電流區內之雷射光L的二維掃瞄,係在基板4內順序地進行。藉此,基板4內之全部的孔位置Hx即被雷射加工。 When the XY table 32 is not moved, the range of the laser processing (scannable area) by the operation of the current (galvano mechanism 36X, 36Y, current mirrors 35X, 35Y) is Current zone (scanning zone). In the laser processing apparatus 100, after the XY table 32 is moved in the XY plane, the laser beams L are scanned two-dimensionally by the current scanners 36X and 36Y. The XY table 32 is sequentially moved so that the center of each current region is directly below the center of the f θ lens 34 (the current of the galvano). The current mechanism operates so that the hole positions Hx set in the current region sequentially become the irradiation positions of the laser light L. The movement of the current section of the XY table 32 and the two-dimensional scanning of the laser light L in the current region by the current mechanism are sequentially performed in the substrate 4. Thereby, all the hole positions Hx in the substrate 4 are laser processed.
溫度檢測部38係配置於f θ透鏡34的端部(外周部) 而量測f θ透鏡34的基底溫度,並將檢測結果傳送至位置校正量計算裝置20。溫度檢測部38亦可為接觸式、非接觸式的任一者。 The temperature detecting unit 38 is disposed at the end (outer peripheral portion) of the f θ lens 34. The substrate temperature of the f θ lens 34 is measured, and the detection result is transmitted to the position correction amount calculating device 20. The temperature detecting unit 38 may be either a contact type or a non-contact type.
雷射加工控制裝置2係連接雷射振盪器1及雷射加工部3(未圖示),以控制雷射振盪器1及雷射加工部3。雷射加工控制裝置2,係在雷射加工基板4時,對雷射振盪器1與雷射加工部3指示設定於加工程式的雷射加工條件。在此的雷射加工條件,係包含有雷射光L之脈衝射出時序、以及雷射光照射位置(基板4上的座標值)等。 The laser processing control device 2 is connected to the laser oscillator 1 and the laser processing unit 3 (not shown) to control the laser oscillator 1 and the laser processing unit 3. The laser processing control device 2 instructs the laser oscillator 1 and the laser processing unit 3 to perform laser processing conditions set in the machining program when the substrate 4 is laser-processed. Here, the laser processing conditions include a pulse emission timing of the laser light L, a laser light irradiation position (coordinate value on the substrate 4), and the like.
本實施形態之雷射加工控制裝置2係具備位置校正量計算裝置20以及控制部30。位置校正量計算裝置20係為根據於最近之預定時間內照射於基板4之雷射光L的能量(例如合計值),而計算雷射光照射位置之校正量(位置偏移校正量)的裝置。位置校正量計算裝置20係使雷射光L以照射於基板4上之期望位置之方式,將對電流機構的指示資訊(位置偏移校正量)輸出至控制部30。 The laser processing control device 2 of the present embodiment includes a position correction amount calculation device 20 and a control unit 30. The position correction amount calculation device 20 is a device that calculates the correction amount (positional deviation correction amount) of the laser light irradiation position based on the energy (for example, the total value) of the laser light L irradiated on the substrate 4 in the most recent predetermined time. The position correction amount calculation device 20 outputs the instruction information (positional deviation correction amount) for the current mechanism to the control unit 30 so that the laser light L is irradiated onto a desired position on the substrate 4.
控制部30係根據加工程式控制電流機構等之動作,並且根據來自位置校正量計算裝置20的指示資訊校正電流機構的動作。控制部30係控制、校正電流機構的動作,藉此控制、校正雷射光照射位置。 The control unit 30 controls the operation of the current mechanism or the like according to the machining program, and corrects the operation of the current mechanism based on the instruction information from the position correction amount calculation device 20. The control unit 30 controls and corrects the operation of the current mechanism, thereby controlling and correcting the laser light irradiation position.
在雷射加工裝置100中,當向基板4照射雷射光L時,f θ透鏡34的溫度會上昇。而,當在f θ透鏡34內產生溫度梯度時,基板4上的雷射光照射位置會從期望位置偏離。因此,在本實施形態中,預先計算出與f θ透鏡34之 溫度梯度等相對應的位置偏移校正量,且採用該位置偏移校正量,校正雷射光照射位置。 In the laser processing apparatus 100, when the laser light L is irradiated to the substrate 4, the temperature of the fθ lens 34 rises. However, when a temperature gradient is generated in the f θ lens 34, the laser light irradiation position on the substrate 4 is deviated from the desired position. Therefore, in the present embodiment, the f θ lens 34 is calculated in advance. The position gradient correction amount corresponding to the temperature gradient or the like is used, and the positional correction amount is used to correct the laser light irradiation position.
f θ透鏡34的溫度梯度,係例如與在預定時間內照射在基板4之雷射光L的能量乘算量相對應而變化。因此,預先導出能量乘算量與位置偏移校正量之關係(校正係數等)。然後,在進行雷射加工時,位置校正量計算裝置20,即計算在預定時間內照射至基板4之雷射光L的能量乘算量。進一步,位置校正量計算裝置20係採用校正係數、與計算出之能量乘算量,而計算位置偏移校正量,並使控制部30進行採用位置偏移校正量的雷射光照射位置之校正。 The temperature gradient of the f θ lens 34 changes, for example, corresponding to the energy multiplication amount of the laser light L irradiated on the substrate 4 for a predetermined time. Therefore, the relationship between the energy multiplication amount and the positional shift correction amount (correction coefficient, etc.) is derived in advance. Then, at the time of laser processing, the position correction amount calculating means 20 calculates the energy multiplication amount of the laser light L irradiated to the substrate 4 for a predetermined time. Further, the position correction amount calculation means 20 calculates the positional deviation correction amount using the correction coefficient and the calculated energy multiplication amount, and causes the control unit 30 to correct the laser light irradiation position using the positional deviation correction amount.
另外,雷射光L之照射位置的位置偏移,雖因f θ透鏡34內的溫度梯度等之原因而產生,惟亦可不量測f θ透鏡34內的溫度梯度而設定校正係數。此情形時,量測與能量乘算量相對應之實際的位置偏移量,並根據量測結果設定校正係數。換言之,導出能量乘算量與位置偏移量之間的關係,並根據導出關係而設定校正係數。 Further, the positional shift of the irradiation position of the laser light L is caused by a temperature gradient or the like in the f θ lens 34, but the correction coefficient may be set without measuring the temperature gradient in the f θ lens 34. In this case, the actual position offset corresponding to the energy multiplication amount is measured, and the correction coefficient is set based on the measurement result. In other words, the relationship between the energy multiplication amount and the positional deviation amount is derived, and the correction coefficient is set according to the derived relationship.
根據f θ透鏡34內的溫度梯度而設定校正係數時,係在雷射加工中實際量測f θ透鏡34內的溫度梯度。然後,導出溫度梯度與能量乘算量之間的關係,並且導出溫度梯度與實際之位置偏移量之間的關係。根據此等的導出結果,導出位置偏移量與能量乘算量之間的關係,並根據該導出結果,設定校正係數。 When the correction coefficient is set based on the temperature gradient in the f θ lens 34, the temperature gradient in the f θ lens 34 is actually measured in the laser processing. Then, the relationship between the temperature gradient and the energy multiplication amount is derived, and the relationship between the temperature gradient and the actual positional offset is derived. Based on the derived results, the relationship between the positional offset and the energy multiplication amount is derived, and the correction coefficient is set based on the derived result.
另外,在本實施形態中,係依每個f θ透鏡34的基底溫度(以下,稱作透鏡溫度)、以及雷射光L的照射位置(電 流區內之座標值)(以下,稱作電流座標)的組合設定校正係數。 Further, in the present embodiment, the base temperature of each of the f θ lenses 34 (hereinafter referred to as lens temperature) and the irradiation position of the laser light L (electrical) The combination of the coordinate values in the flow region (hereinafter, referred to as current coordinates) sets the correction coefficient.
雷射加工控制裝置2係藉由電腦(Computer)等所構成,且藉由NC(Numerical Control,數值控制)控制等控制雷射振盪器1及雷射加工部3。雷射加工控制裝置2係具備CPU(Central Processing Unit,中央處理單元)、ROM(Read Only Memory,唯讀記憶體)、以及RAM(Random Access Memory,隨機存取記憶體)等所構成。於雷射加工控制裝置2控制雷射振盪器1及雷射加工部3之際,CPU係透過使用者從輸入部(未圖示)的輸入,讀取儲存於ROM內的加工程式,部署於RAM內的程式儲存區域而執行各種處理。於此處理之際所產生的各種資料,係暫時地記憶於在RAM內所形成的資料儲存區域。藉此,雷射加工控制裝置2則控制雷射振盪器1及雷射加工部3。 The laser processing control device 2 is constituted by a computer or the like, and controls the laser oscillator 1 and the laser processing unit 3 by NC (Numerical Control) control or the like. The laser processing control device 2 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). When the laser processing control device 2 controls the laser oscillator 1 and the laser processing unit 3, the CPU reads the processing program stored in the ROM through the input from the input unit (not shown) by the user, and deploys it on the processing program. Various processing is performed by the program storage area in the RAM. The various materials generated at the time of this processing are temporarily memorized in the data storage area formed in the RAM. Thereby, the laser processing control device 2 controls the laser oscillator 1 and the laser processing unit 3.
接著,針對位置校正量計算裝置20之構成加以說明。本實施形態的位置校正量計算裝置20係根據透鏡溫度與電流座標,選擇使用於位置偏移校正的校正係數。 Next, the configuration of the position correction amount calculation device 20 will be described. The position correction amount calculation device 20 of the present embodiment selects a correction coefficient used for positional offset correction based on the lens temperature and the current coordinate.
第2圖係為顯示位置校正量計算裝置之構成的方塊圖。位置校正量計算裝置20係具備脈衝檢測部21、脈衝記憶部22、乘算部23、校正係數記憶部24、校正量計算部25、照射位置輸入部26、溫度輸入部27、以及輸出部28。 Fig. 2 is a block diagram showing the configuration of a position correction amount calculation means. The position correction amount calculation device 20 includes a pulse detection unit 21, a pulse storage unit 22, a multiplication unit 23, a correction coefficient storage unit 24, a correction amount calculation unit 25, an irradiation position input unit 26, a temperature input unit 27, and an output unit 28. .
脈衝檢測部21,係檢測從雷射振盪器1射出於雷射加工部3的雷射光L。脈衝檢測部21,係使檢測出的各雷射 光L的射出時序(時刻)記憶於脈衝記憶部22。 The pulse detecting unit 21 detects the laser light L that is incident on the laser processing unit 3 from the laser oscillator 1. The pulse detecting unit 21 causes each of the detected lasers The emission timing (time) of the light L is stored in the pulse storage unit 22.
脈衝記憶部22,係為記憶各脈衝之射出時序的記憶體等。脈衝記憶部22,係例如於預定時間(例如60秒)之間,記憶各脈衝的射出時序。然後,脈衝記憶部22係於經過預定時間時消除已記憶的射出時序。例如,脈衝記憶部22係於經過預定時間而變舊的射出時序的記憶區域覆寫新的射出射出時序,藉此消除變舊的射出時序。 The pulse memory unit 22 is a memory or the like that memorizes the emission timing of each pulse. The pulse memory unit 22 stores the emission timing of each pulse, for example, between predetermined times (for example, 60 seconds). Then, the pulse memory unit 22 eliminates the memorized emission timing when a predetermined time elapses. For example, the pulse memory unit 22 overwrites the new emission/emission timing with respect to the memory region of the emission timing that has passed through the predetermined time, thereby eliminating the old emission timing.
乘算部23,係計算在預定時間之間(例如從30秒前至目前為止之間)從雷射振盪器1射出至雷射加工部3之雷射光L的能量乘算量。乘算部23,係例如藉由相乘在預定時間之間從雷射振盪器1射出之雷射光L的脈衝數、與1單位脈衝的能量,即算出能量乘算量。乘算部23,係假定1單位脈衝的能量為恆定值,而計算能量乘算量。 The multiplying unit 23 calculates the energy multiplication amount of the laser light L emitted from the laser oscillator 1 to the laser processing unit 3 between predetermined times (for example, from 30 seconds ago to the present). The multiplying unit 23 calculates the energy multiplying amount by multiplying the number of pulses of the laser light L emitted from the laser oscillator 1 between the predetermined time and the energy of one unit pulse, for example. The multiplication unit 23 calculates the energy multiplication amount by assuming that the energy of one unit pulse is a constant value.
校正係數記憶部24係為記憶校正係數之記憶體等。校正係數記憶部24,係依每個透鏡溫度與電流座標的組合記憶校正係數。照射位置輸入部26,係從加工程式抽出電流座標,而傳送至校正量計算部25。另外,照射位置輸入部26,亦可從由雷射加工控制裝置2傳送至雷射加工部3的照射位置指令(指示照射雷射光L位置的資訊)抽出電流座標,而傳送至校正量計算部25。溫度輸入部27,係輸入溫度檢測部38檢側出的透鏡溫度,而傳送至校正量計算部25。 The correction coefficient storage unit 24 is a memory or the like that memorizes the correction coefficient. The correction coefficient storage unit 24 memorizes the correction coefficient in accordance with the combination of each lens temperature and current coordinates. The irradiation position input unit 26 extracts the current coordinates from the machining program and transmits the current coordinates to the correction amount calculation unit 25. Further, the irradiation position input unit 26 may extract the current coordinate from the irradiation position command (information indicating the position of the irradiation laser light L) transmitted from the laser processing control device 2 to the laser processing unit 3, and may transmit the current coordinate to the correction amount calculation unit. 25. The temperature input unit 27 receives the lens temperature detected by the temperature detecting unit 38 and transmits it to the correction amount calculating unit 25.
校正量計算部25,係從校正係數記憶部24內抽出與透鏡溫度以及電流座標相對應的校正係數。校正量計算部 25,係採用乘算部23所計算之能量乘算量、以及從校正係數記憶部24內所抽出之校正係數,而算出位置偏移校正量。校正量計算部25,並傳送算出之位置偏移校正量至輸出部28。輸出部28,係傳送位置偏移校正量至控制部30。 The correction amount calculation unit 25 extracts the correction coefficient corresponding to the lens temperature and the current coordinate from the correction coefficient storage unit 24. Correction amount calculation unit 25, the positional offset correction amount is calculated by using the energy multiplication amount calculated by the multiplication unit 23 and the correction coefficient extracted from the correction coefficient storage unit 24. The correction amount calculation unit 25 transmits the calculated positional deviation correction amount to the output unit 28. The output unit 28 transmits the positional shift correction amount to the control unit 30.
接著,針對藉由雷射加工裝置100進行之雷射加工處理之處理順序加以說明。第3圖係為顯示實施形態之雷射加工處理之處理順序的流程圖。當雷射加工裝置100開始雷射加工時,雷射加工控制裝置2係依據加工程式,控制雷射振盪器1、以及雷射加工部3。藉此,開始雷射光L的射出(步驟S10)。自雷射振盪器1係在依據加工程式之時序射出雷射光L。此外,雷射加工部3,係以在對應於加工程式之位置照射雷射光L之方式,使電流機構、以及XY工作台32等動作。此外,溫度檢測部38係檢側透鏡溫度。 Next, the processing procedure of the laser processing by the laser processing apparatus 100 will be described. Fig. 3 is a flow chart showing the processing procedure of the laser processing of the embodiment. When the laser processing apparatus 100 starts laser processing, the laser processing control apparatus 2 controls the laser oscillator 1 and the laser processing section 3 in accordance with the processing program. Thereby, the emission of the laser light L is started (step S10). The self-oscillation oscillator 1 emits laser light L at a timing according to a processing program. Further, the laser processing unit 3 operates the current mechanism, the XY table 32, and the like so as to irradiate the laser light L at a position corresponding to the processing program. Further, the temperature detecting unit 38 detects the side lens temperature.
脈衝檢測部21,係檢測從雷射振盪器1射出至雷射加工部3之雷射光L,並在脈衝記憶部22記憶檢測出的各雷射光L的射出時序(步驟S20)。 The pulse detecting unit 21 detects the laser light L emitted from the laser oscillator 1 to the laser processing unit 3, and stores the detected emission timing of each of the laser light L in the pulse memory unit 22 (step S20).
照射位置輸入部26,係從加工程式等抽出電流座標,而傳送至校正量計算部25。此外,溫度輸入部27,係將溫度檢測部38所檢測之透鏡溫度傳送至校正量計算部25。 The irradiation position input unit 26 extracts the current coordinates from the machining program or the like and transmits the current coordinates to the correction amount calculation unit 25. Further, the temperature input unit 27 transmits the lens temperature detected by the temperature detecting unit 38 to the correction amount calculating unit 25.
乘算部23,係計算在預定時間(例如後述的時間Tx)之間從雷射振盪器1射出至雷射加工部3之雷射光L的能量乘算量(步驟S30)。校正量計算部25,係從校正係數記憶部24內抽出與透鏡溫度以及電流座標相對應的校正係數(步驟S40)。校正量計算部25,係相乘乘算部所計算之 能量乘算量、與從校正係數記憶部24所抽出之校正係數,而算出位置偏移校正量(步驟S50)。校正量計算部25,係傳送位置偏移校正量至輸出部28。 The multiplier 23 calculates an energy multiplying amount of the laser light L emitted from the laser oscillator 1 to the laser processing unit 3 between predetermined times (for example, time Tx to be described later) (step S30). The correction amount calculation unit 25 extracts the correction coefficient corresponding to the lens temperature and the current coordinate from the correction coefficient storage unit 24 (step S40). The correction amount calculation unit 25 is calculated by the multiplication multiplication unit The energy multiplication amount and the correction coefficient extracted from the correction coefficient storage unit 24 calculate the positional deviation correction amount (step S50). The correction amount calculation unit 25 transmits the positional deviation correction amount to the output unit 28.
輸出部28,係傳送位置偏移校正量至控制部30。藉此,控制部30係以採用位置偏移校正量校正雷射光照射位置的位置偏移之方式,控制電流掃描器36X、36Y(步驟S60)。在雷射加工部3中,以僅以位置偏移校正量校正雷射光L的照射位置之方式,由電流掃描器36X、36Y使電流鏡35X、35Y旋轉。 The output unit 28 transmits the positional shift correction amount to the control unit 30. Thereby, the control unit 30 controls the current scanners 36X and 36Y so as to correct the positional shift of the laser light irradiation position by the positional shift correction amount (step S60). In the laser processing unit 3, the current mirrors 35X and 35Y are rotated by the current scanners 36X and 36Y so that the irradiation position of the laser light L is corrected only by the positional shift correction amount.
第4圖係為用以說明藉由位置校正量計算裝置之電流機構的控制之圖。位置校正量計算裝置20,係檢測從雷射振盪器1所射出的雷射光L。此外,並向位置校正量計算裝置20,輸入溫度檢測部38所檢測的透鏡溫度。 Fig. 4 is a view for explaining the control of the current mechanism by the position correction amount calculating means. The position correction amount calculation device 20 detects the laser light L emitted from the laser oscillator 1. Further, the lens temperature detected by the temperature detecting unit 38 is input to the position correction amount calculating device 20.
在位置校正量計算裝置20中,根據從預定時間前至目前時刻為止從雷射振盪器1所射出之雷射光L的能量乘算量、透鏡溫度、以及電流座標,而計算位置偏移校正量。然後,位置校正量計算裝置20,係根據位置偏移校正量,校正藉由電流掃描器36X、36Y對電流鏡35X、35Y的控制。 In the position correction amount calculation device 20, the positional deviation correction amount is calculated based on the energy multiplication amount, the lens temperature, and the current coordinate of the laser light L emitted from the laser oscillator 1 from the predetermined time before the current time. . Then, the position correction amount calculating means 20 corrects the control of the current mirrors 35X, 35Y by the current scanners 36X, 36Y based on the positional shift correction amount.
在此,針對f θ透鏡34的上昇溫度、及從雷射光照射位置之目標位置的位置偏移量之間的關係加以說明。第5圖係為顯示f θ透鏡的上昇溫度與位置偏移量之間的關係之圖。在第5圖中,橫軸係為f θ透鏡34的上昇溫度,而縱軸係為雷射光照射位置之對目標位置的位置偏移量。在第5圖中特性51係為實測值,而特性52係為模擬 (simulation)值。 Here, the relationship between the rising temperature of the f θ lens 34 and the positional shift amount from the target position of the laser light irradiation position will be described. Fig. 5 is a graph showing the relationship between the rising temperature of the f θ lens and the amount of positional shift. In Fig. 5, the horizontal axis represents the rising temperature of the f θ lens 34, and the vertical axis represents the positional shift amount of the laser light irradiation position to the target position. In Figure 5, the characteristic 51 is the measured value, and the characteristic 52 is the analog. (simulation) value.
隨著f θ透鏡34的溫度上昇,雷射光照射位置之對目標位置的位置偏移量愈大。另外,因具有電流掃描器36X、36Y的動態特性,故即使上昇溫度為零℃,亦如特性51所示位置偏移量不為零。在本實施形態中,係以位置偏移量為零之方式,進行雷射光照射位置之位置偏移校正。 As the temperature of the f θ lens 34 rises, the positional shift amount of the laser light irradiation position to the target position is larger. Further, since the dynamic characteristics of the current scanners 36X and 36Y are provided, even if the rising temperature is zero ° C, the positional shift amount as shown by the characteristic 51 is not zero. In the present embodiment, the positional deviation correction of the laser beam irradiation position is performed so that the positional shift amount is zero.
雷射光照射位置的位置偏移量,係因雷射光L通過f θ透鏡34上之任一位置是否照射在基板4上(電流座標)而相異者。因此,在本實施形態中,係設定與雷射光L的f θ透鏡34上之通過位置相對應的位置偏移校正量。換言之,即選擇與電流座標相對應的校正係數,使用選擇的校正係數計算位置偏移校正量。 The positional shift amount of the laser light irradiation position differs depending on whether or not the laser light L passes through any position on the f θ lens 34 on the substrate 4 (current coordinate). Therefore, in the present embodiment, the positional shift correction amount corresponding to the passing position on the fθ lens 34 of the laser light L is set. In other words, the correction coefficient corresponding to the current coordinate is selected, and the positional deviation correction amount is calculated using the selected correction coefficient.
第6圖係為顯示雷射光的f θ透鏡上之通過位置與位置偏移校正量之間的關係之圖。在第6圖中,橫軸係為離f θ透鏡34之中心(以下,稱作透鏡中心)的距離(雷射光L通過位置),而縱軸係為位置偏移校正量。另外,在第6圖中,係顯示f θ透鏡34之溫度上昇1℃時的位置偏移校正量。 Fig. 6 is a graph showing the relationship between the passing position on the f θ lens of the laser light and the amount of positional shift correction. In Fig. 6, the horizontal axis is the distance from the center of the f θ lens 34 (hereinafter referred to as the lens center) (the laser light passing position), and the vertical axis is the position shift correction amount. Further, in Fig. 6, the positional shift correction amount when the temperature of the f θ lens 34 rises by 1 °C is shown.
藉由f θ透鏡34與電流掃描器36X、36Y掃瞄的雷射光L,由於f θ透鏡34的溫度上昇,而對於透鏡中心朝伸縮方向位置偏移。在雷射光L通過透鏡中心照射於基板4上時,位置偏移量大致為零,位置偏移校正量亦大致為零。然後,隨著離透鏡中心愈大位置偏移量亦變大,且位置偏移校正量亦變大。 The laser light L scanned by the f θ lens 34 and the current scanners 36X and 36Y is shifted in the telescopic direction due to the temperature rise of the f θ lens 34. When the laser light L is irradiated onto the substrate 4 through the center of the lens, the positional shift amount is substantially zero, and the positional shift correction amount is also substantially zero. Then, as the position larger than the center of the lens shifts, the amount of shift becomes larger, and the amount of positional shift correction also becomes larger.
如此,因愈為f θ透鏡34的端部位置偏移量愈大,故愈為f θ透鏡34的端部位置偏移校正量亦設定愈大。換言之,以愈為f θ透鏡34的端部位置偏移校正量愈大之方式,進行校正校正係數。藉此,愈通過f θ透鏡34之中心附近照射於基板4之雷射光L,進行愈小的位置偏移校正,而愈通過f θ透鏡34之外周附近照射於基板4之雷射光L,進行愈大的位置偏移校正。例如,如第6圖所示,依據一次函數變化位置偏移校正量。藉此,離透鏡中心的距離與位置偏移校正量之間的關係係近似一次函數,而校正雷射光L的照射位置。 As described above, the greater the end position shift amount of the f θ lens 34, the larger the end position shift correction amount of the f θ lens 34 is set. In other words, the correction correction coefficient is performed in such a manner that the more the end position shift correction amount of the f θ lens 34 is. As a result, the laser beam L irradiated to the substrate 4 near the center of the f θ lens 34 is subjected to the smaller positional shift correction, and the laser light L irradiated to the substrate 4 near the outer periphery of the f θ lens 34 is performed. The larger the position offset correction. For example, as shown in Fig. 6, the positional offset correction amount is changed in accordance with a linear function. Thereby, the relationship between the distance from the lens center and the positional shift correction amount approximates the linear function, and the irradiation position of the laser light L is corrected.
在位置校正量記算裝置20中,校正量計算部25,係根據電流座標,計算雷射光L之通過f θ透鏡34上的位置(離透鏡中心的距離)。然後,校正量計算部25,從校正係數記憶部24抽出與雷射光L之通過f θ透鏡34上的位置相對應的校正係數。藉此,校正量計算部25,係使用與電流座標相對應的校正係數計算位置偏移校正量。 In the position correction amount calculation device 20, the correction amount calculation unit 25 calculates the position (the distance from the lens center) of the laser light L passing through the f θ lens 34 based on the current coordinates. Then, the correction amount calculation unit 25 extracts the correction coefficient corresponding to the position of the laser light L passing through the f θ lens 34 from the correction coefficient storage unit 24. Thereby, the correction amount calculation unit 25 calculates the positional deviation correction amount using the correction coefficient corresponding to the current coordinate.
另外,依據一次函數的校正係為一例,亦可採用其他方法(二次函數以上之複雜的近似式等)進行校正。例如,設定與f θ透鏡34之構造及/或雷射加工裝置100內其他的構造(光學特性)相對應的校正方法。 Further, the correction system based on the primary function is an example, and other methods (complex approximations such as a quadratic function or the like) may be used for correction. For example, a correction method corresponding to the configuration of the f θ lens 34 and/or other structures (optical characteristics) in the laser processing apparatus 100 is set.
第7圖係為用以說明位置偏移與位置偏移校正之圖。在第7圖中,係圖示進行位置偏移校正的電流區之狀態40A至40C。在各狀態40A至40C中,顯示雷射光L的目標照射位置41與雷射光照射位置42之間的關係。 Figure 7 is a diagram for explaining positional offset and positional offset correction. In Fig. 7, the states 40A to 40C of the current region in which the positional shift correction is performed are illustrated. In each of the states 40A to 40C, the relationship between the target irradiation position 41 of the laser light L and the laser light irradiation position 42 is displayed.
狀態40A,係為在雷射加工的剛開始後電流區的狀態。又,狀態40B,係為隨著f θ透鏡34的溫度上昇惡化位置精確度時(位置偏移校正前)之電流區的狀態。再者,狀態40C,係為f θ透鏡34在溫度上昇時進行位置偏移校正後之電流區的狀態。 State 40A is the state of the current zone immediately after the start of laser processing. Further, the state 40B is a state of the current region when the positional accuracy is deteriorated as the temperature of the f θ lens 34 rises (before the positional shift correction). Further, the state 40C is a state of the current region in which the f θ lens 34 performs positional shift correction when the temperature rises.
如狀態40A所示,雷射加工的剛開始後,在雷射光L的目標照射位置41與雷射光照射位置42之間並無產生位置偏移。又,如狀態40B所示,當f θ透鏡34的溫度上昇時,在雷射光L的目標照射位置41與雷射光照射位置42之間產生位置偏移。又,如狀態40C所示,藉由進行位置偏移校正,消除在雷射光L的目標照射位置41與雷射光照射位置42之間的位置偏移。 As shown in the state 40A, immediately after the start of the laser processing, no positional shift occurs between the target irradiation position 41 of the laser light L and the laser light irradiation position 42. Further, as shown in the state 40B, when the temperature of the f θ lens 34 rises, a positional shift occurs between the target irradiation position 41 of the laser light L and the laser light irradiation position 42. Further, as shown in the state 40C, the positional shift between the target irradiation position 41 of the laser light L and the laser light irradiation position 42 is eliminated by performing the positional shift correction.
第8圖係為顯示f θ透鏡的實際的溫度變化與藉由溫度檢測部檢測溫度之間的關係之圖。在第8圖中,橫軸係為時間(從雷射加工起的經過時間),縱軸係為f θ透鏡34的溫度。第8圖所示特性45係為f θ透鏡34的實際的溫度變化,特性46係為藉由溫度檢測部38所檢測的溫度變化。 Fig. 8 is a view showing the relationship between the actual temperature change of the f θ lens and the temperature detected by the temperature detecting portion. In Fig. 8, the horizontal axis is time (elapsed time from laser processing), and the vertical axis is the temperature of the f θ lens 34. The characteristic 45 shown in Fig. 8 is the actual temperature change of the f θ lens 34, and the characteristic 46 is the temperature change detected by the temperature detecting unit 38.
開始雷射加工前,f θ透鏡34的溫度係為恆定值(溫度t1)。當在經過時間T1之後開始以預定的脈衝週期的雷射加工時,如特性45所示,f θ透鏡34的實際溫度慢慢地上昇,在經過預定時間之後f θ透鏡34的溫度成為恆定值(溫度T2)。此為,由於當雷射光L通過f θ透鏡34時使f θ透鏡34的溫度上昇,惟當經過預定時間時f θ透鏡34的 溫度返回至原溫度的緣故。換言之,雷射光L從通過f θ透鏡34起於預定時間之間使f θ透鏡34溫度上昇。因此,在照射雷射光L之後,當停止雷射光L的照射時,在雷射光L的停止照射後,經過預定時間之後,f θ透鏡34的溫度返回至原溫度。在第8圖所示之特性45中,因持續雷射光L的照射,故f θ透鏡34係上升至溫度t2為止後,維持溫度t2。 Before the laser processing is started, the temperature of the f θ lens 34 is a constant value (temperature t1). When laser processing at a predetermined pulse period is started after the elapse of time T1, as indicated by the characteristic 45, the actual temperature of the f θ lens 34 gradually rises, and after a predetermined time elapses, the temperature of the f θ lens 34 becomes a constant value. (Temperature T2). This is because the temperature of the f θ lens 34 is raised when the laser light L passes through the f θ lens 34, but the f θ lens 34 is only when a predetermined time elapses. The temperature returns to the original temperature. In other words, the laser light L rises in temperature from the f θ lens 34 for a predetermined time between the predetermined time. Therefore, after the irradiation of the laser light L, when the irradiation of the laser light L is stopped, after the lapse of the irradiation of the laser light L, the temperature of the f θ lens 34 returns to the original temperature after a predetermined time elapses. In the characteristic 45 shown in Fig. 8, since the irradiation of the laser light L is continued, the f θ lens 34 is raised to the temperature t2, and the temperature t2 is maintained.
溫度檢測部38,係因配置於f θ透鏡34的端部,故實際上從f θ透鏡34的溫度上昇起,至溫度檢測部38檢測出f θ透鏡34的溫度上昇為止需要時間。因此,f θ透鏡34的實際的溫度變化(特性45),與藉由溫度檢測部38所檢測的溫度變化(特性46)不同。具體而言,如特性46所示,在較時間T1為後的經過時間T2之後,f θ透鏡34的檢測溫度逐漸地上昇,在經過預定時間之後,f θ透鏡34的溫度成為恆定值(溫度t2)。因此,溫度檢測部38係較f θ透鏡34的實際溫度變為溫度t2時點落後,才檢測出f θ透鏡34變為溫度t2。 Since the temperature detecting unit 38 is disposed at the end of the f θ lens 34, it takes time from the temperature rise of the f θ lens 34 to the temperature detecting unit 38 detecting that the temperature of the f θ lens 34 has risen. Therefore, the actual temperature change (characteristic 45) of the f θ lens 34 is different from the temperature change (characteristic 46) detected by the temperature detecting unit 38. Specifically, as shown by the characteristic 46, after the elapsed time T2 which is later than the time T1, the detected temperature of the f θ lens 34 gradually rises, and after a predetermined time elapses, the temperature of the f θ lens 34 becomes a constant value (temperature T2). Therefore, the temperature detecting portion 38 detects that the f θ lens 34 has become the temperature t2 when the actual temperature of the f θ lens 34 becomes lower than the temperature t2.
因此,在本實施形態中,係根據雷射光L的能量乘算量,計算位置偏移校正量。然後,根據需要選擇與f θ透鏡34之檢測溫度相對應的校正係數。因此,能夠計算正確的位置偏移校正量。另外,校正量計算部25,亦可選擇與能量乘算量相對應的校正係數。 Therefore, in the present embodiment, the positional shift correction amount is calculated based on the energy multiplication amount of the laser light L. Then, the correction coefficient corresponding to the detected temperature of the f θ lens 34 is selected as needed. Therefore, the correct positional shift correction amount can be calculated. Further, the correction amount calculation unit 25 may select a correction coefficient corresponding to the energy multiplication amount.
接著,針對能量乘算量的計算方法加以說明。第9圖係為用以說明能量乘算量的計算方法之圖。另外,在第9 圖中,係以雷射脈衝Px顯示第x個脈衝(x為自然數)的雷射脈衝。 Next, a calculation method of the energy multiplication amount will be described. Fig. 9 is a diagram for explaining a calculation method of the energy multiplication amount. In addition, at the 9th In the figure, a laser pulse of the xth pulse (x is a natural number) is displayed with a laser pulse Px.
位置校正量計算裝置20的乘算部23,係計算在時間(乘算區間)Tx之間雷射脈衝的能量乘算量。換言之,乘算部23係算出能量乘算量的移動平均。例如,照射第n個脈衝(n為自然數)的雷射脈衝Pn時,係乘算在時間Tx之間第1至第n個的雷射脈衝P1至Pn的各能量之量,而計算能量乘算量。 The multiplication unit 23 of the position correction amount calculation device 20 calculates the energy multiplication amount of the laser pulse between time (multiplication interval) Tx. In other words, the multiplying unit 23 calculates the moving average of the energy multiplying amount. For example, when the laser pulse Pn of the nth pulse (n is a natural number) is irradiated, the energy of each of the first to nth laser pulses P1 to Pn between the times Tx is multiplied to calculate the energy. Multiply the amount.
之後,當繼續雷射加工時,經過時間Tx之雷射脈衝的能量從能量乘算量減去,並且在時間Tx之間射出新的雷射脈波時,對能量乘算量加上新的雷射脈衝的能量。 Thereafter, when the laser processing is continued, the energy of the laser pulse after the elapse of time Tx is subtracted from the energy multiplication amount, and when a new laser pulse wave is emitted between the times Tx, a new amount is added to the energy multiplication amount. The energy of the laser pulse.
在第9圖中,係顯示在射出第(n+1)個脈衝的雷射脈衝P(n+1)時,無經過時間Tx的雷射脈衝的情形。因此,沒有從能量乘算量減去能量。另一方面,因在新的時間Tx之間射出第(n+1)個脈衝的雷射脈衝Pn,故對能量乘算量加上第(n+1)個脈衝的能量。藉此,使在射出第(n+1)個脈衝的雷射脈衝P(n+1)時點的能量乘算量,為合計至雷射脈衝P1至P(n+1)為止的能量之值。 In Fig. 9, the case where the laser pulse of the (n+1)th pulse is emitted, the laser pulse having no elapse of time Tx is displayed. Therefore, energy is not subtracted from the energy multiplication amount. On the other hand, since the (n+1)th pulse laser pulse Pn is emitted between the new times Tx, the energy of the (n+1)th pulse is added to the energy multiplication amount. Thereby, the energy multiplication amount at the time of the laser pulse P(n+1) at which the (n+1)th pulse is emitted is the value of the energy up to the laser pulses P1 to P(n+1). .
此外,在第9圖中,在射出第(n+2)個脈衝的雷射脈衝P(n+2)時,經過時間Tx的雷射脈衝,係為雷射脈衝P1至P(n-2)。因此,在射出第(n+2)個脈衝的雷射脈衝P(n+2)時,從能量乘算量減去雷射脈衝P1至P(n-2)的能量作為經過時間Tx的雷射脈衝。另一方面,在新的時間Tx之間因射出第(n+2)個脈衝的電射脈衝P(n+2),故對能量乘算 量加上第(n+2)個脈衝的能量。藉此,在射出第(n+2)個脈衝的雷射脈衝P(n+2)的時間點之能量乘算量係為將雷射脈衝P(n-1)至P(n+2)的能量予以合計的值。 Further, in Fig. 9, when the (n+2)th pulse of the laser pulse P(n+2) is emitted, the laser pulse of the time Tx is the laser pulse P1 to P(n-2). ). Therefore, when the (n+2)th pulse of the laser pulse P(n+2) is emitted, the energy of the laser pulses P1 to P(n-2) is subtracted from the energy multiplication amount as the thunder of the elapsed time Tx. Shoot the pulse. On the other hand, the electric pulse P(n+2) of the (n+2)th pulse is emitted between the new time Tx, so the energy is multiplied. The amount plus the energy of the (n+2)th pulse. Thereby, the energy multiplication amount at the time point of the laser pulse P(n+2) at which the (n+2)th pulse is emitted is the laser pulse P(n-1) to P(n+2). The energy is given a total value.
另外,屬於乘算區間的時間Tx會因f θ透鏡34周邊的構造及環境(散熱狀態)而變化。因此,乘算區間係與f θ透鏡34周邊的實際構造及環境相對應而被最佳化。 Further, the time Tx belonging to the multiplication section changes due to the structure around the f θ lens 34 and the environment (heat dissipation state). Therefore, the multiplication interval is optimized in accordance with the actual structure and environment around the f θ lens 34.
此外,在本實施形態中,時間Tx內的各雷射脈衝,雖假定全部為屬於能量相同而計算能量乘算量,惟亦可與時間Tx內的時間帶相對應,而使用於乘算的能量變化。換言之,亦可依每個雷射脈衝的射出時刻,對能量進行加權。 Further, in the present embodiment, each of the laser pulses in the time Tx is assumed to have the same energy and the energy multiplication amount is calculated, but may be used for the multiplication in the time Tx. Energy changes. In other words, the energy can also be weighted according to the time of each laser pulse.
例如,照射於時間Tx內之舊時間帶的雷射脈衝(離照射脈衝的經過時間長者),造成f θ透鏡34的溫度上昇的影響會變小。另一方面,照射於時間Tx內之新時間帶的雷射脈衝(離照射脈衝的經過時間短者),造成f θ透鏡34的溫度上昇的影響較大。因此,對於照射於時間Tx內的雷射脈衝,亦可設定與離脈衝照射的經過時間相對應的能量。此時,離脈衝照射的經過時間愈短的雷射脈衝設定愈大的能量,而離脈衝照射的經過時間愈長的雷射脈衝設定愈小的能量。然後,對從脈衝照射經過時間Tx的雷射脈衝,設定「零」作為能量。藉此,即能夠計算與f θ透鏡34的溫度梯度相對應之正確的位置偏移校正量。 For example, a laser pulse that is irradiated to the old time zone within the time Tx (which is longer than the elapsed time of the irradiation pulse) causes the influence of the temperature rise of the f θ lens 34 to become small. On the other hand, the laser pulse irradiated in the new time zone within the time Tx (which is shorter than the elapsed time of the irradiation pulse) causes a large influence of the temperature rise of the f θ lens 34. Therefore, for the laser pulse irradiated in the time Tx, the energy corresponding to the elapsed time from the pulse irradiation can also be set. At this time, the laser beam having a shorter elapsed time from the pulse irradiation is set to have a larger energy, and the longer the elapsed pulse from the pulse irradiation is set, the smaller the energy is set. Then, "zero" is set as the energy for the laser pulse from the pulse irradiation elapsed time Tx. Thereby, it is possible to calculate the correct positional shift correction amount corresponding to the temperature gradient of the f θ lens 34.
接著,針對雷射加工的處理例加以說明。進行雷射加工時,例如反覆雷射光的照射、及預定的等待狀態。第10圖係為用以說明將等待時間設定較短時之位置偏移量的變 化之圖;第11圖係為用以說明將等待時間設定較長時之位置偏移量的變化之圖。 Next, a processing example of laser processing will be described. When laser processing is performed, for example, irradiation of repetitive laser light and a predetermined waiting state are performed. Figure 10 is a diagram showing the change of the positional offset when the waiting time is set to be short. Fig. 11 is a diagram for explaining a change in the positional shift amount when the waiting time is set to be long.
在第10圖及第11圖中係為顯示令1單位脈衝的能量為10毫焦耳(mJ),以2000赫芝(Hz)的恆定速度進行雷射加工時其位置偏移量61、62、以及f θ透鏡計算溫度(模擬值)60的時間性變化。第10圖及第11圖的橫軸係為時間,縱軸的左側係為位置偏移量,而縱軸的右側係為f θ透鏡計算溫度。此外,無位置偏移校正時的位置偏移量係為位置偏移量61,而有位置偏移校正時的位置偏移量係為位置偏移量62。另外,能量乘算量之乘算區間(時間Tx)係設30秒。 In Fig. 10 and Fig. 11, the energy of one unit pulse is 10 millijoules (mJ), and the positional shift amount 61, 62 is performed when laser processing is performed at a constant speed of 2000 Hz (Hz). And the f θ lens calculates the temporal variation of the temperature (analog value) 60. The horizontal axis of Figs. 10 and 11 is time, the left side of the vertical axis is the position shift amount, and the right side of the vertical axis is the f θ lens calculation temperature. Further, the positional shift amount at the time of no positional offset correction is the positional shift amount 61, and the positional shift amount at the time of the positional shift correction is the positional shift amount 62. In addition, the multiplication interval (time Tx) of the energy multiplication amount is set to 30 seconds.
在第10圖中,係顯示將5秒鐘的雷射光照射(加工)與15秒鐘的等待狀態反覆4次時,其位置偏移量61、62、以及f θ透鏡計算溫度60;而在第11圖中,係顯示將5秒鐘的雷射光照射與30秒鐘的等待狀態反覆4回時,其位置偏移量61、62、以及f θ透鏡計算溫度60。 In Fig. 10, it is shown that when 5 seconds of laser light irradiation (processing) and a waiting state of 15 seconds are repeated four times, the positional shift amounts 61, 62, and the f θ lens calculate the temperature 60; In Fig. 11, it is shown that when the laser light irradiation for 5 seconds and the waiting state for 30 seconds are repeated four times, the positional shift amounts 61, 62, and the f θ lens calculation temperature 60.
如第10圖所示,當以2000Hz的恆定速度進行5秒鐘的雷射光照射(10000孔之加工)時,伴隨雷射光L的照射f θ透鏡計算溫度60及位置偏移量61變大。而且,在等待時間(15秒)之間,f θ透鏡計算溫度60及位置偏移量61雖會縮小預定量,惟不返回初始值。因此,進行從第1次加工至第4次加工為止時,各次的加工後之f θ透鏡計算溫度60及位置偏移量61係緩緩地變大。 As shown in Fig. 10, when laser light irradiation (processing of 10,000 holes) is performed for 5 seconds at a constant speed of 2000 Hz, the lens 60 calculation temperature 60 and the position shift amount 61 become larger with the irradiation of the laser light L. Further, between the waiting time (15 seconds), the f θ lens calculating temperature 60 and the position shift amount 61 are reduced by a predetermined amount, but the initial value is not returned. Therefore, when the first processing to the fourth processing are performed, the f θ lens calculation temperature 60 and the positional deviation amount 61 after the respective processing are gradually increased.
另一方面,在本實施形態中,即使以2000Hz的恆定速 度進行5秒鐘的雷射光照射時,因進行與f θ透鏡計算溫度60相對應之量的位置偏移校正,故位置偏移量62係保持低值穩定狀態。而且,即使進行從第1次加工至第4次加工為止時,位置偏移量62亦保持低值穩定狀態。 On the other hand, in the present embodiment, even at a constant speed of 2000 Hz When the laser light irradiation for 5 seconds is performed, the positional shift correction is performed by the amount corresponding to the f θ lens calculation temperature 60, so that the positional shift amount 62 is maintained at a low value steady state. Further, even when the first machining to the fourth machining are performed, the positional shift amount 62 is maintained at a low steady state.
如此,即可得知對於f θ透鏡34的溫度上昇無位置偏移校正(位置精確度校正無效)時,伴隨f θ透鏡34的溫度上昇位置偏移量會增加。另一方面,可得知對於f θ透鏡34的溫度上昇有位置偏移校正(位置精確度校正有效)時,即使f θ透鏡34的溫度上昇,位置偏移量亦為恆定(不增加)。 As described above, when the positional shift correction (invalid positional accuracy correction) is not performed for the temperature rise of the f θ lens 34, the amount of temperature shift positional shift with the f θ lens 34 increases. On the other hand, when the positional deviation correction (effectiveness of positional accuracy correction) is satisfied with the temperature rise of the f θ lens 34, the positional shift amount is constant (not increased) even if the temperature of the f θ lens 34 rises.
又,如第11圖所示,當以2000Hz的恆定速度進行5秒鐘的雷射光照射(10000孔之加工)時,伴隨雷射光L的照射f θ透鏡計算溫度60及位置偏移量61變大。而且,在經過等待時間(30秒)之後,f θ透鏡計算溫度60及位置偏移量61係大致返回初始值。因此,進行從第1次加工至第4次加工為止時,各次的加工後之f θ透鏡計算溫度60及位置偏移量61係到達至預定的大小為止,且在經過屬於等待時間的30秒之後,f θ透鏡計算溫度60及位置偏移量61係大致返回初始值。即使該情形,各次的加工中位置偏移量亦增大。 Further, as shown in Fig. 11, when laser light irradiation (processing of 10,000 holes) is performed for 5 seconds at a constant speed of 2000 Hz, the temperature 60 and the position shift amount 61 are changed with the irradiation of the laser light f θ lens. Big. Further, after the elapse of the waiting time (30 seconds), the f θ lens calculation temperature 60 and the position shift amount 61 are substantially returned to the initial values. Therefore, when the first processing to the fourth processing are performed, the f θ lens calculation temperature 60 and the positional deviation amount 61 after each processing are reached to a predetermined size, and 30 times of the waiting time is passed. After the second, the f θ lens calculation temperature 60 and the position offset amount 61 are substantially returned to the initial values. Even in this case, the amount of positional shift in each processing increases.
另一方面,在本實施形態中,即使以2000Hz的恆定速度進行5秒鐘的雷射光照射時,因進行與f θ透鏡計算溫度60相對應之量的位置偏移校正,故位置偏移量62係保持低值穩定狀態。而且,即使進行從第1次加工至第4次 加工為止時,位置偏移量62亦保持低值穩定狀態。 On the other hand, in the present embodiment, even when the laser light irradiation for 5 seconds is performed at a constant speed of 2000 Hz, the positional shift correction is performed by the amount corresponding to the f θ lens calculation temperature 60. The 62 series maintains a low value steady state. Moreover, even from the first processing to the fourth time At the time of processing, the positional shift amount 62 is also maintained at a low value steady state.
如此,即可得知對於f θ透鏡計算溫度60進行位置偏移校正時,即使f θ透鏡34的溫度上昇,位置偏移量亦為恆定(不增加)。而且,乘算區間係因30秒,故藉由30秒的等待時間f θ透鏡計算溫度60係返回常態溫度。 Thus, when the positional deviation correction is performed for the f θ lens calculation temperature 60, even if the temperature of the f θ lens 34 rises, the positional shift amount is constant (not increased). Further, since the multiplication interval is 30 seconds, the temperature 60 is returned to the normal temperature by the 30 second waiting time f θ lens.
另外,在此雖針對在雷射加工處理與雷射加工處理之間設置等待時間之情形加以說明,惟亦可在雷射加工處理與雷射加工處理之間不設置等待時間而連續進行雷射加工處理。 In addition, although the case where the waiting time is set between the laser processing and the laser processing is described here, it is also possible to continuously perform the laser without setting the waiting time between the laser processing and the laser processing. Processing.
順便一提,f θ透鏡34的基底溫度,係因雷射加工裝置100的設置環境及雷射加工裝置100的運轉狀況等而產生變化。因此,亦可在基底溫度變化至預定值為止時,在該基底溫度下實施一次由電流掃描器36X、36Y所做的偏移的校正。藉此,位置偏移量暫時重置。此時,與基底溫度(透鏡溫度)相對應之校正係數的變更為不必要。 Incidentally, the base temperature of the f θ lens 34 varies depending on the installation environment of the laser processing apparatus 100 and the operation state of the laser processing apparatus 100. Therefore, the correction of the offset by the current scanners 36X, 36Y can be performed once at the substrate temperature when the substrate temperature changes to a predetermined value. Thereby, the positional offset is temporarily reset. At this time, the change of the correction coefficient corresponding to the substrate temperature (lens temperature) is unnecessary.
另外,亦可預先計算在各雷射光照射位置的位置偏移校正量。此時,乘算部23係預先根本加工程式,對各雷射光照射位置計算對雷射光照射位置照射雷射光L時的能量乘算量。然後,校正量計算部25係對每個雷射光照射位置計算位置偏移校正量。輸出部28係將算出之各位置偏移校正量記憶於雷射加工控制裝置2內的記憶部(未圖示)等。當開始雷射加工時,控制部30係讀出已記憶的位置偏移校正量,並對每個雷射光照射位置進行使用位置偏移校正量的位置偏移校正。 Further, the positional shift correction amount at each laser light irradiation position may be calculated in advance. At this time, the multiplication unit 23 calculates the energy multiplication amount when the laser light irradiation position is irradiated to the laser light irradiation position by calculating the program in advance. Then, the correction amount calculation unit 25 calculates a positional shift correction amount for each of the laser light irradiation positions. The output unit 28 stores the calculated position shift correction amount in a memory unit (not shown) or the like in the laser processing control device 2. When the laser processing is started, the control unit 30 reads out the stored positional shift correction amount, and performs positional shift correction using the positional shift correction amount for each of the laser light irradiation positions.
如此,根據實施形態,瞬間地計算與f θ透鏡34的溫度對應之能量乘算量。因此,能夠不使時間差產生,而根據能量乘算量,將雷射光L的照射位置(加工位置)正確地進行位置偏移校正。因此,能夠進行位置精確度良好的雷射加工。 As described above, according to the embodiment, the energy multiplication amount corresponding to the temperature of the f θ lens 34 is instantaneously calculated. Therefore, it is possible to accurately correct the positional shift of the irradiation position (processing position) of the laser light L based on the energy multiplication amount without causing a time difference. Therefore, it is possible to perform laser processing with good positional accuracy.
根據前述,本發明之雷射加工控制裝置及雷射加工控制方法,係適用於對被處理基板的開孔加工。 According to the above, the laser processing control device and the laser processing control method of the present invention are suitable for the drilling process of the substrate to be processed.
1‧‧‧雷射振盪器 1‧‧‧Laser oscillator
2‧‧‧雷射加工控制裝置 2‧‧‧ Laser processing control device
3‧‧‧雷射加工部 3‧‧ ‧ Laser Processing Department
4‧‧‧基板 4‧‧‧Substrate
20‧‧‧位置校正量計算裝置 20‧‧‧ Position correction amount calculation device
21‧‧‧脈衝檢測部 21‧‧‧ Pulse Detection Department
22‧‧‧脈衝記憶部 22‧‧‧Pulse Memory
23‧‧‧乘算部 23‧‧‧Calculation Department
24‧‧‧校正係數記憶部 24‧‧‧Correction coefficient memory
25‧‧‧校正量計算部 25‧‧‧Measurement Calculation Department
26‧‧‧照射位置輸入部 26‧‧‧ Irradiation position input unit
27‧‧‧溫度輸入部 27‧‧‧ Temperature input section
28‧‧‧輸出部 28‧‧‧Output Department
30‧‧‧控制部 30‧‧‧Control Department
32‧‧‧XY工作台 32‧‧‧XY workbench
34‧‧‧f θ透鏡 34‧‧‧f θ lens
35X、35Y‧‧‧電流鏡 35X, 35Y‧‧‧ current mirror
36X、36Y‧‧‧電流掃描器 36X, 36Y‧‧‧ Current Scanner
38‧‧‧溫度檢測部 38‧‧‧ Temperature Detection Department
100‧‧‧雷射加工裝置 100‧‧‧ Laser processing equipment
L‧‧‧雷射光 L‧‧‧Laser light
P1至P(n+2)‧‧‧脈衝雷射 P1 to P(n+2)‧‧‧pulse laser
第1圖係為顯示實施形態之雷射加工裝置的構成圖。 Fig. 1 is a view showing the configuration of a laser processing apparatus according to an embodiment.
第2圖係為顯示位置校正量計算裝置之構成的方塊圖。 Fig. 2 is a block diagram showing the configuration of a position correction amount calculation means.
第3圖係為顯示實施形態之雷射加工處理之處理順序的流程圖。 Fig. 3 is a flow chart showing the processing procedure of the laser processing of the embodiment.
第4圖係為用以說明藉由位置校正量計算裝置之電流機構的控制之圖。 Fig. 4 is a view for explaining the control of the current mechanism by the position correction amount calculating means.
第5圖係為顯示f θ透鏡的上昇溫度與位置偏移量之間的關係之圖。 Fig. 5 is a graph showing the relationship between the rising temperature of the f θ lens and the amount of positional shift.
第6圖係為顯示雷射光的f θ透鏡上之通過位置與位置偏移校正量之間的關係之圖。 Fig. 6 is a graph showing the relationship between the passing position on the f θ lens of the laser light and the amount of positional shift correction.
第7圖係為用以說明位置偏移與位置偏移校正之圖。 Figure 7 is a diagram for explaining positional offset and positional offset correction.
第8圖係為顯示f θ透鏡的實際的溫度變化與藉由溫度檢測部檢測溫度之間的關係之圖。 Fig. 8 is a view showing the relationship between the actual temperature change of the f θ lens and the temperature detected by the temperature detecting portion.
第9圖係為用以說明能量乘算量的計算方法之圖。 Fig. 9 is a diagram for explaining a calculation method of the energy multiplication amount.
第10圖係為用以說明將等待時間設定較短時之位置偏移量的變化之圖。 Fig. 10 is a view for explaining a change in the positional shift amount when the waiting time is set to be short.
第11圖係為用以說明將等待時間設定較長時之位置偏移量的變化之圖。 Fig. 11 is a view for explaining a change in the positional shift amount when the waiting time is set to be long.
20‧‧‧位置校正量計算裝置 20‧‧‧ Position correction amount calculation device
21‧‧‧脈衝檢測部 21‧‧‧ Pulse Detection Department
22‧‧‧脈衝記憶部 22‧‧‧Pulse Memory
23‧‧‧乘算部 23‧‧‧Calculation Department
24‧‧‧校正係數記憶部 24‧‧‧Correction coefficient memory
25‧‧‧校正量計算部 25‧‧‧Measurement Calculation Department
26‧‧‧照射位置輸入部 26‧‧‧ Irradiation position input unit
27‧‧‧溫度輸入部 27‧‧‧ Temperature input section
28‧‧‧輸出部 28‧‧‧Output Department
Claims (7)
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| PCT/JP2011/073694 WO2013054445A1 (en) | 2011-10-14 | 2011-10-14 | Laser processing control device and laser processing control method |
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Cited By (3)
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|---|---|---|---|---|
| US11909177B2 (en) | 2016-09-02 | 2024-02-20 | Kyushu University, National University Corporation | Continuous-wave organic thin-film distributed feedback laser and electrically driven organic semiconductor laser diode |
| US11955776B2 (en) | 2017-02-07 | 2024-04-09 | Kyushu University, National University Corporation | Current-injection organic semiconductor laser diode, method for producing same and program |
| TWI846301B (en) * | 2016-09-02 | 2024-06-21 | 國立大學法人九州大學 | Simulation modeling method for an organic laser device, program for performing the simulation modeling method, and method for manufacturing an organic laser device |
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| JP6327475B2 (en) * | 2015-03-26 | 2018-05-23 | 京セラドキュメントソリューションズ株式会社 | Optical scanning device for image forming apparatus and image forming apparatus provided with the optical scanning device |
| JP2021087967A (en) * | 2019-12-03 | 2021-06-10 | 株式会社ディスコ | Method for adjusting laser processing device |
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| JP4320524B2 (en) * | 2002-04-04 | 2009-08-26 | 三菱電機株式会社 | Laser processing equipment |
| JP4091494B2 (en) * | 2003-07-24 | 2008-05-28 | 三菱電機株式会社 | Laser machining apparatus and machining position deviation correction method thereof |
| JP5100827B2 (en) * | 2008-04-04 | 2012-12-19 | 三菱電機株式会社 | Processing control device and laser processing device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11909177B2 (en) | 2016-09-02 | 2024-02-20 | Kyushu University, National University Corporation | Continuous-wave organic thin-film distributed feedback laser and electrically driven organic semiconductor laser diode |
| US12015248B2 (en) | 2016-09-02 | 2024-06-18 | Kyushu University, National University Corporation | Continuous-wave organic thin-film distributed feedback laser and electrically driven organic semiconductor laser diode |
| TWI846301B (en) * | 2016-09-02 | 2024-06-21 | 國立大學法人九州大學 | Simulation modeling method for an organic laser device, program for performing the simulation modeling method, and method for manufacturing an organic laser device |
| US11955776B2 (en) | 2017-02-07 | 2024-04-09 | Kyushu University, National University Corporation | Current-injection organic semiconductor laser diode, method for producing same and program |
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