TW201303057A - Method for detecting effective power deviations in microwaves in plasma processing devices, and plasma processing device - Google Patents

Abstract

This method finds effective power deviations in microwaves that arise among a plurality of plasma processing devices. Processing gas is supplied at a prescribed pressure to an evacuated processing vessel (12) and the vessel sealed. Microwaves are introduced into the sealed processing vessel at a prescribed electric power, and gas plasma for processing is generated. The change in the pressure in the processing vessel before plasma generation and the pressure in the processing vessel after plasma generation is measured, and the effective power deviation for the microwaves in the plasma processing device and the other plasma processing device is found on the basis of a correlative relation for the variation width for the pressure in another plasma processing device that is found in advance and forms a standard and the electric power for supplying the microwaves.

Description

Method for detecting deviation of microwave actual power in plasma processing device and plasma processing device thereof

The present invention relates to a method for detecting a deviation amount of actual microwave power generated between different plural plasma processing apparatuses in a plasma processing apparatus for plasma-treating a processed object, and a plasma processing apparatus.

In the manufacture of a semiconductor element, in order to be used for various applications such as a gate insulating film of CMOS, formation of a tantalum oxide film or a tantalum nitride film is performed. A method of forming the tantalum oxide film or the tantalum nitride film is known as a thermal oxidation treatment, a thermal nitridation treatment by heating a tantalum substrate, or a nitriding treatment or oxidation by plasma treatment of a surface of a tantalum substrate by plasma. Method of treatment (for example, Patent Document 1).

The above plasma treatment is usually carried out in a plasma processing apparatus that uses microwaves or the like to generate plasma. In the plasma processing apparatus, the microwave generated by the microwave oscillator is introduced into the processing container through the waveguide, the antenna, and the dielectric window to generate a plasma containing the gas supplied to the oxygen or nitrogen in the processing container. . Then, the surface of the tantalum substrate is subjected to plasma treatment by plasma of the oxygen or plasma of nitrogen, and a tantalum oxide film or a tantalum nitride film is formed on the surface of the tantalum substrate.

Patent Document 1: Japanese Laid-Open Patent Publication No. 2003-115587

However, in the above-described plasma processing apparatus, even if the plasma treatment is performed under the same conditions, a plurality of plasma processing apparatuses are formed in the base. The film thickness or nitrogen concentration of the oxide film on the surface of the plate varies. As described above, there is a problem in product quality if the film thickness or the like after the plasma treatment occurs between the devices.

One of the causes of the difference between the above-mentioned devices is presumed to be that the microwave is supplied to the processing container, and the processing is caused by the difference in the path of the microwave, the assembly of the plasma generating mechanism, the processing container, and the like. The electrical power of the microwaves generated by the plasma in the vessel, that is, the actual power of the microwaves, varies for some reason.

The electric power supplied to the microwave in the processing container can be monitored by a control unit provided in the plasma processing apparatus, and the supply electric power of the microwave is usually controlled in accordance with the monitoring. However, even if it is monitored by the control unit, in fact, after the microwave is introduced into the processing container to generate plasma, it is impossible to detect a subtle change state of the plasma, such as a difference in electric power of the microwave. Therefore, the cause of the difference in plasma processing generated between the above devices is presumed to be due to dimensional tolerances in the microwave propagation path of the antenna portion or the dielectric window after the waveguide, or assembly errors during assembly of the device, resulting in microwaves. The loss in the propagation process creates a machine difference, which leads to a difference in the actual power of the microwave.

However, since there is no method for quantitatively detecting the actual power of the microwave itself, the machine difference of the actual power cannot be obtained. Therefore, at present, the off-set amount adjustment for canceling the actual power between the complex processing devices cannot be performed, and the difference in plasma processing between the plasma processing devices cannot be eliminated.

The present invention has been made in view of the above problems, and an object thereof is to obtain a deviation amount of microwave actual power between plasma processing apparatuses.

In order to achieve the above object, the method for detecting the deviation of the actual power of the microwave in the plasma processing apparatus of the present invention is obtained by processing the plasma processing apparatus of the object to be processed by microwave plasma, and obtaining a plurality of plasma processing apparatuses. a method for generating a deviation amount of actual microwave power; the plasma processing device has: a microwave generating portion that generates microwaves; and a processing container that has an opening for performing plasma processing; and a pressure measuring mechanism that measures the processing a pressure in the container; a dielectric window that hermetically closes an opening of the processing container; an antenna disposed on the upper surface of the dielectric window; and a waveguide that causes the microwave generated by the microwave generating portion to face The antenna is propagated and introduced into the processing container; the gas supply portion supplies the gas into the processing container; and the exhaust portion is exhausted in the processing container; wherein the plasma processing device is used to specify Pressure to supply the gas to the treated container after the exhaust and to be sealed; introducing microwave into the processing container at a specific electric power to generate a plasma of the gas; measuring the The pressure in the processing vessel before the plasma generation in the slurry processing device and the pressure in the processing vessel after the plasma is generated; the pressure variation amplitude in the other plasma processing device based on the previously obtained reference is related to the microwave power supply A relationship is obtained to determine the amount of deviation of the actual microwave power between the plasma processing apparatus and the other plasma processing apparatus.

According to the present invention, since the system is supplied with a process gas and is sealed When the processing container generates the plasma, the magnitude of the pressure change generated in the processing container is measured, so that the complex plasma processing device can be obtained according to the correlation between the pressure variation amplitude and the microwave supply electric power in other plasma processing devices as a reference. The amount of deviation of the actual power of the microwave between. As a result, the offset adjustment for eliminating the deviation of the actual microwave power generated between the processing devices can be performed, and the machine difference between the plasma processing devices can be eliminated.

Another aspect of the present invention relates to a plasma processing apparatus for treating a processed object by microwave plasma, comprising: a microwave generating portion for generating microwaves; and a processing container having an opening for performing plasma processing; The electric window is for the microwave to penetrate and is introduced into the processing container; the cover assembly supports the dielectric window and closes the opening of the processing container; the antenna is disposed on the upper surface of the dielectric window; The electric board is disposed on the upper surface of the antenna; the cover board is disposed to cover the upper side of the dielectric board; and the waveguide is connected to the cover board, and the microwave is transmitted to the antenna to be introduced into the a processing container; wherein the cover plate is provided with a recessed portion for accommodating the dielectric plate formed on the lower surface thereof, and an outer peripheral edge portion of the cover plate is provided with an outer peripheral protrusion formed to protrude in an outer circumferential direction thereof, and And forming a lower protruding portion formed below the outer peripheral protruding portion; further comprising: an L-shaped annular fixing assembly supported by the cover assembly to support the outer peripheral protruding portion of the cover plate, and pressing the outer periphery of the cover plate Burst An upper annular pressing assembly of the upper portion, a first engaging component that is inserted into the pressing component and the outer peripheral protruding portion of the covering plate, and fixed to the fixing component, and inserted and fixed The assembly is fixed to the second joint assembly of the cover assembly; the vertical portion of the press assembly is formed such that the inner peripheral surface abuts against the outer peripheral protrusion of the cover plate, and the outer peripheral surface of the vertical portion of the pressing assembly abuts Connected to the vertical portion of the fixed assembly.

According to the present invention, in the plasma processing apparatus of the plasma processing (the actual power of the microwave), the pressure of the plasma processing apparatus as the reference and the power of the microwave are measured in advance, and the microwave power is calculated from the result. Off-set, in this way, the amount of deviation of the actual microwave power between the plasma processing units can be determined. As a result, by measuring the microwave power of the organic poor plasma processing apparatus and setting the offset value for the measurement result and using it, the inorganic poor plasma treatment can be performed.

Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a view showing the schematic configuration of a plasma processing apparatus 1 according to an embodiment of the present invention. The plasma processing apparatus 1 has a processing container 12 provided with a wafer holding stage 11 for holding a silicon substrate (wafer W). A heater (not shown) is provided inside the wafer holding stage 11 to heat the wafer W to a specific temperature. The bottom of the processing container 12 is provided with an exhaust chamber 13 as an exhaust portion that uniformly exhausts the inside of the processing container 12. The exhaust chamber 13 is connected to an exhaust pipe 15 that communicates with an exhaust device 14 such as a vacuum pump. The exhaust pipe 15 is provided with a valve body 16 which can be opened and closed by a signal from, for example, the control unit 17.

Above the processing container 12, there is an opening portion that opens corresponding to the wafer W on the wafer holding stage 11. The opening is provided with a microwave supply unit 2 that closes the opening and supplies microwaves into the processing container. The microwave supply unit 2 supports the dielectric window 19 made of quartz or Al ₂ O ₃ through a sealing material 18 such as an O-ring for ensuring airtightness, and has a function of opening and closing the processing container 12 The assembly (Lid) 50 is hermetically sealed. An antenna 20 is disposed on the outer side of the dielectric window 19 (outside). The antenna 20 is made of a conductive material, for example, a thin circular plate made of metal such as copper, aluminum or nickel. The surface of the antenna 20 is formed concentrically with, for example, a plurality of pairs of slots 20a as shown in FIG. 20b, a so-called radial slot antenna. Each of the slots 20a and 20b is a square through groove, and the adjacent slots 20a and 20b are arranged to be orthogonal to each other to form a letter of "T" close to the English letter. The length or arrangement spacing of the slots 20a, 20b is determined by the wavelength of the microwaves supplied.

As shown in FIG. 1, the upper surface of the antenna 20 is provided with a dielectric plate (slow wave plate) 21 made of quartz, alumina, aluminum nitride or the like. The dielectric body plate 21 has a function of a slow wave plate. A conductive cover plate 22 such as aluminum covering the dielectric plate 21 is disposed above the dielectric plate 21. Further, the outer peripheral portion of the antenna 20 is engaged with the cover plate 22.

Inside the cover plate 22, a refrigerant flow path 22a through which a refrigerant flows is provided. Further, a coaxial waveguide 24 is connected to the center of the cover plate 22. The upper end portion of the coaxial waveguide 24 is connected to the microwave generating device 23 as a microwave generating portion via the rectangular waveguide 27 and the mode converter 28.

The microwave generating device 23 is disposed outside the processing container 12 to generate a microwave of, for example, 2.45 GHz. Further, the microwave generating device 23 is connected to the mode converter 28 via the mode converter 28 to perform impedance matching of the microwaves. The coaxial waveguide 24 is composed of an outer conductor 24a and an inner conductor 24b, and an inner conductor 24b is connected to the antenna 20. With this configuration, the microwave generated from the microwave generating device 23 is propagated in the impedance matching unit 25, the rectangular waveguide 27, the mode converter 28, and the coaxial waveguide 24, and serves as a slow wave plate. When the electric body panel 21 is compressed and the wavelength is shortened, the circularly undulated microwave from the antenna 20 is introduced into the processing container 12 from the dielectric window 19.

Further, the upstream side of the impedance matching unit 25 is provided with an electric power measuring mechanism 26 for measuring the electric power of the microwave supplied from the microwave generating device 23. The electric power measuring mechanism 26 is electrically connected to the control unit 17, and the measurement result is input to the control unit 17.

The inner peripheral surface of the upper portion of the processing container 12 forms a gas supply port 30 for supplying a gas for plasma generation. The gas supply port 30 is formed at a plurality of locations along the inner circumferential surface of the processing container 12, for example. The gas supply port 30 is connected to a gas supply pipe 32 that communicates with, for example, the gas supply portion 31 provided outside the processing container 12. The gas supply unit 31 of the present embodiment has an inert gas supply unit 33 and a nitrogen gas supply unit 34, and is connected to the gas supply port 30 through the respective valve bodies 33a and 34a and the mass flow controllers 33b and 34b. The flow rate of the gas supplied from the gas supply port 30 is controlled by the mass flow controllers 33b, 34b. system. Further, in addition to the gas supply port 30, the inner peripheral surface of the processing container 12 is provided with a pressure measuring mechanism 35 for measuring the pressure in the processing container 12. The pressure measuring mechanism 35 is electrically connected to the control unit 17, and the measurement result is input to the control unit 17. Further, in the present embodiment, a case where argon (Ar) gas in which a rare gas is stored in the gas supply portion 31 or nitrogen gas which is used in plasma nitriding treatment of the wafer W will be described as an example.

A gas separator 40 made of, for example, quartz, and a metal support member 41 such as aluminum for supporting the quartz gas separator 40 are provided around the wafer holding stage 11 in the processing container 12.

The above plasma processing apparatus 1 is provided with the control unit 17 as described above. The control unit 17 is, for example, a computer having a program storage unit (not shown). The program storage unit also stores a program for controlling the microwave processing device 23, the valve body 16, and the like to operate the plasma processing device 1. In addition, the program records a memory medium H that can be read by a computer, such as a computer readable hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like. The memory unit H can be mounted to the control unit 17.

<First embodiment>

The plasma processing apparatus 1 of the present embodiment is configured as described above. Next, the principle of the method for detecting the deviation amount of the actual microwave power in the plasma processing apparatus 1 of the present embodiment will be described.

As described above, even if the microwave processing is performed on the plasma processing apparatus 1 of the same structure with the same electric power, the plasma processing is performed. The film thickness or nitrogen concentration of the nitride film formed on the surface of the substrate between the plurality of plasma processing apparatuses 1 may vary.

In response to this difference, the following two kinds of confirmation tests were performed using two plasma processing apparatuses 100 and 200 having the same configuration as that of the plasma processing apparatus 1.

First, the first confirmation test confirms the difference in plasma nitriding treatment in the two plasma processing apparatuses 100 and 200. At the time of confirmation, the wafer W of the germanium substrate is placed on the wafer holding stage 11, and microwaves are supplied to the processing container 12 supplied with argon gas and nitrogen gas in an electric power range of 1400 W to 1700 W, and the wafer W is applied. Plasma nitriding treatment is performed. The plasma nitriding treatment is performed by two plasma processing apparatuses 100 and 200, respectively. Figure 3 shows the results of the plasma nitriding treatment. In Fig. 3, the horizontal axis represents the electric power of the microwave supplied from the microwave generating device 23, and the vertical axis represents the nitrogen concentration of the tantalum nitride film formed on the surface of the wafer W by plasma nitriding treatment, which is respectively A. B shows a graph showing the correlation between the supplied electric power and the nitrogen concentration of the plasma in the two plasma processing apparatuses 100 and 200.

As shown in FIG. 3, it can be found that the nitrogen concentration of the tantalum nitride film is in the entire range of the plasma electric power of 1400 W to 1700 W, and the plasma processing apparatus 100 (the graph A of FIG. 3) is more than the plasma processing apparatus 200. The person (Figure B of Figure 3) is going to come high.

Next, the second confirmation test confirms the relationship between the electric power of the plasma in the two plasma processing apparatuses 100 and 200 and the pressure in the processing container 12. In the second confirmation test, the processing container in the exhausted state After the argon gas was supplied and the processing container 12 was sealed in a state where the internal pressure was 240 Pa, microwaves were supplied to the inside of the processing container 12 in an electric power range of 1400 W to 1700 W to generate a plasma. Thereafter, the value of the pressure change generated in the processing vessel 12 by the plasma generation is measured. Figure 4 shows the results of the second confirmation test. In Fig. 4, the horizontal axis represents the electric power of the microwave supplied from the microwave generating device 23, and the vertical axis represents the change range of the pressure before the plasma generation in the processing container 12 and the pressure after the plasma is generated, which are respectively C and D. A graph showing the correlation between the electric power of the plasma and the pressure change amplitude in the two plasma processing apparatuses 100 and 200.

As shown in FIG. 4, it can be found that the pressure variation range in the processing container 12 is in the entire range of the plasma electric power in the range of 1400 W to 1700 W, and the plasma processing apparatus 100 (the pattern C in FIG. 4) is more than the plasma processing apparatus. The 200 (Figure D of Figure 4) is coming high.

In general, the pressure within the processing vessel 12 during plasma generation depends on the actual power of the microwave. Thus, even if microwaves are supplied to the two plasma processing apparatuses 100, 200 at the same electric power, the results of FIG. 4 differing in the magnitude of the pressure variation in the processing container 12, it is known that the plasma processing apparatus 100, 200 will still be present. The deviation of the actual power of the microwave is generated.

Next, in order to investigate the correlation between the pressure change amplitude and the nitrogen concentration of the tantalum nitride film, the horizontal axis shown in FIG. 5 is the change width of the pressure, and the vertical axis is the tantalum nitride film. A chart of nitrogen concentration. As shown in FIG. 5, it is made by the plasma processing apparatus 100. The plasma treatment (pattern E of Fig. 5) or the plasma treatment of the plasma processing apparatus 200 (pattern F of Fig. 5) shows that the magnitude of the pressure change is substantially the same as the nitrogen concentration.

Therefore, if the actual power deviation between the two plasma processing apparatuses 100 and 200 can be obtained from the correlation between the supply electric power of the microwaves shown in FIG. 4 and the pressure variation range in the processing container 12, the deviation can be made. The amount is set to offset (off-set) of the microwave supply electric power. As a result, the difference between the two plasma processing apparatuses 100 and 200 can be substantially eliminated.

The present invention has been made in view of the above problems, and the method of determining the amount of deviation of the actual microwave power in the present embodiment will be specifically described. Fig. 6 is a flow chart showing the process of the method for detecting the deviation amount of the actual power of the microwave in the present embodiment.

In the plurality of plasma processing apparatuses 100 and 200, when the amount of deviation of the actual power of the microwave is obtained, first, for example, the plasma processing apparatus 100 determines the correlation between the supplied electric power of the plasma and the pressure change range.

When the correlation is obtained, first, the inside of the container 12 is exhausted (step S1 of Fig. 6). Next, argon gas is supplied into the processing container 12 via the gas supply port 30 (step S2 of FIG. 6).

After that, the pressure in the processing container 12 is, for example, 240 Pa, and the supply of argon gas is stopped, and the valve body 16 is closed, and the processing container 12 is sealed in a state where the pressure of the argon gas is 240 Pa (step S3 in Fig. 6). Next, the processing capacity is performed with an electric power range of, for example, 1400 W to 1700 W. The microwave is supplied into the device 12 to generate plasma (step S4 of Fig. 6). Further, the monitoring of the supply electric power of the microwave is performed by the electric power measuring mechanism 26.

Thereafter, the magnitude of the change in pressure generated in the processing vessel 12 due to plasma generation is measured to determine the correlation between the plasma supply electric power shown in the graph C of FIG. 4 and the variation range of the pressure in the processing container 12. Step S5) of 6.

Next, similarly to the plasma processing apparatus 100, the plasma processing apparatus 200 determines the correlation between the supply electric power of the microwave and the pressure variation range in the processing container 12. In this case, the inside of the processing container 12 is exhausted in the same manner as in the above-described plasma processing apparatus 100 (step S6 in FIG. 6), and then argon gas is supplied into the processing container 12 (step S7 in FIG. 6). On the other hand, the processing container 12 is hermetically sealed at a pressure of 240 Pa in the processing container 12 (step S8 of Fig. 6). Then, microwaves are supplied to the sealed processing container 12 at a power of 1400 W to 1700 W to generate plasma (step S9 of FIG. 6), and thereafter, pressure changes generated in the processing container 12 due to plasma generation are measured. Amplitude. The relationship between the electric power supplied to the plasma shown in the graph D of Fig. 4 and the magnitude of the change in the pressure in the processing container 12 is obtained (step S10 of Fig. 6).

Then, according to the correlation between the correlation between the plasma processing apparatus 100 and the plasma processing apparatus 200, the deviation amount of the actual microwave power generated between the plasma processing apparatus 100 and the plasma processing apparatus 200 is obtained (FIG. 6 Step S11). Specifically, it is represented by Figure D of Figure 4. The supply electric power of the microwave in the plasma processing apparatus 200 is determined to be, for example, a pressure variation range in the case of 1600 W. The magnitude of the change in this case is approximately 60.7 Pa. Then, from the graph C of FIG. 4, the electric power in the case where the pressure variation in the plasma processing apparatus 100 is also 60.7 Pa is obtained, which is about 1480 W. From this, it can be seen that, based on the plasma processing apparatus 200, the actual power of the microwave in the plasma processing apparatus 100 is higher than the plasma processing apparatus 200 by an amount equivalent to 120 W of the microwave supplying electric power. Therefore, in the plasma processing apparatus 100, the machine difference can be eliminated by shifting the setting of the microwave supplied from the microwave generating apparatus 23 by 120 W, and the same as the plasma processing apparatus 200 by the plasma processing apparatus 100. Plasma treatment.

According to the above embodiment, since the processing container 12 is sealed by supplying the argon gas to the processing container 12 of the plasma processing apparatus 100, and the microwave is generated in the processing container 12 in this state to generate plasma, the processing container is measured. The magnitude of the pressure change generated in the 12, so that the correlation between the pressure change amplitude and the microwave supply electric power in the plasma processing apparatus 200 based on the previously obtained reference can be obtained between the plasma processing apparatuses 100 and 200. The amount of deviation of the actual microwave power produced. Thereby, the offset adjustment of the microwave power for eliminating the variation of the actual microwave power generated between the plasma processing apparatuses 100 and 200 can be performed, and the machine difference of the plasma processing can be eliminated.

The above embodiment is directed to both the plasma processing apparatus 100 and the plasma processing apparatus 200, and measures the pressure variation range in a microwave electric power range of, for example, 1400 W to 1700 W, but for plasma processing. The device 100 only needs to measure the pressure change width at one point in any range of 1400 W to 1700 W. For the plasma processing apparatus 100, as long as the pressure change in the case where the electric power of the microwave is 1600 W is measured, the actual power deviation between the microwave and the plasma processing apparatus 200 as the reference can be determined to be equivalent to the microwave. Supply 120W of electric power. Further, it is of course arbitrarily determined based on which of the plasma processing apparatuses 100 and 200 is used as a reference. In practice, it is preferred to use, for example, a plasma processing apparatus that has been used in the production of a product, that is, a device that already knows the nitrogen concentration after treatment.

Further, in the above embodiment, the plasma processing apparatus 100 generates plasma at a specific microwave power, thereby measuring the pressure variation range generated in the processing container 12, and the plasma processing apparatus 200 as a reference. The relationship between the power and the pressure is used to determine the machine difference. For example, when the plasma nitriding treatment is performed, the desired nitrogen concentration is determined in advance, and the pattern E corresponding to the desired nitrogen can be directly obtained. The supply power of the microwave of the concentration. Specifically, for example, when the nitrogen concentration in the plasma nitriding treatment is 13%, it can be seen from the graph E of FIG. 5 that the pressure change range in the processing container 12 at this time is about 62 Pa. Then, as long as the argon gas is introduced into the processing container 12 at 240 Pa in the plasma processing apparatus 100, and then the electric power of the supplied microwave is changed, the electric power of the measurement value of the pressure measuring mechanism 35 becomes 62 Pa. The microwave power for making the nitrogen concentration 13% can be directly obtained in the plasma processing apparatus 100. In this case, it is directly obtained to obtain the target nitrogen concentration. Since the wave power is used, the processing results between the plasma processing apparatuses 100 and 200 can be made more precise.

<Second embodiment>

Further, although the above embodiment is described with respect to a method of eliminating the variation in the actual microwave power between the plurality of plasma processing apparatuses 100 and 200, even if it is a single plasma processing apparatus 1, the plasma is treated as a maintenance or the like. When the device 1 is disassembled and reassembled, the actual power of the microwave may be deviated before and after maintenance due to assembly errors.

In order to reduce the above assembly error, an effective method is to form the plasma processing apparatus 1 in a manner that does not change the relative position of the antenna 20 or the dielectric window 19 with respect to the processing container 12 before and after maintenance. Hereinafter, the specific structure will be described.

Fig. 7 is a partial longitudinal cross-sectional view showing the structure of the lid assembly 50, the dielectric window 19, the antenna 20, the dielectric plate (slow wave plate) 21, and the vicinity of the cover plate 22 in the upper portion of the processing container 12 of the plasma processing apparatus 1. . In addition, since the structure other than the following description is the same as that of the above description, description is abbreviate|omitted.

The dielectric window 19 is airtightly supported by a sealing member (not shown) such as an O-ring, and is supported on the upper surface of the support portion 50a which is provided to protrude inward from the inner circumferential surface of the lid assembly 50. An antenna 20 is disposed on the upper surface of the dielectric window 19. A dielectric plate 21 is disposed on the upper surface of the antenna 20.

Corresponding to the cover antenna 20 and the dielectric plate 21 as a slow wave plate In the lower position of the cover plate 22, a lower protruding portion 22b that protrudes downward from the outer peripheral portion of the cover plate 22 is formed, and a recessed portion 22c that is recessed upward is formed. The dielectric plate 21 is in close contact with the recessed portion 22c and housed therein. Further, in the vicinity of the center in the height direction of the outer peripheral edge portion of the cover plate 22, the outer peripheral projection portion 22d is formed to protrude in the outer circumferential direction.

The upper surface 50b of the cap assembly 50 is fixed to the annular fixing member 51 having a substantially L-shaped cross-sectional shape by a joint assembly 52 such as a bolt penetrating through the vertical portion 51a of the fixing member 51 in the vertical direction.

The lower surface of the outer peripheral projection 22d of the cover panel 22 is supported on the upper surface of the fixing assembly 51. The outer peripheral portion of the outer peripheral protruding portion 22d is in close contact with a substantially L-shaped annular pressing member 53 having an L-shaped cross section and 90 degrees to the left, and passes through the pressing member 53 from the upper surface of the horizontal portion 53a of the pressing unit 53. The outer peripheral portion 22d is fixed to the cover plate 22 by the dielectric member 19, the antenna 20, and the dielectric plate 21 by a bonding member 54 such as a bolt. Further, the vertical portion 53b of the pressing unit 53 is configured such that the inner peripheral surface abuts against the outer peripheral protruding portion 22d of the cover plate 22, and the outer peripheral surface of the vertical portion 53b abuts against the vertical portion 51a of the fixing unit 51. Further, by forming an annular gap (recess) between the outer peripheral surface of the lower protruding portion 22b of the cover plate 22 and the inner peripheral surface of the fixing unit 51, center correction can be easily performed at the time of maintenance. Thus, the cover plate 22 and the pressing member 53 can be prevented from moving in the horizontal direction by the vertical portion 51a of the fixing member 51. At the same time, the dielectric window 19, the antenna 20, the dielectric plate 21, and the cover plate can be cooled (cooled) Board) 22 self-alignment. Therefore, the relative positions of the processing container 12 before and after the maintenance, the antenna 20, and the like do not change. Therefore, by making the vicinity of the upper end portion of the processing container 12 of the plasma processing apparatus 1 into the configuration of FIG. 7, the variation in the actual power of the microwave can be minimized before and after the maintenance.

Further, when the microwave propagating from the coaxial waveguide 24 in the vertical direction is introduced into the antenna 20, it also propagates in the outer peripheral direction in the dielectric plate 21. Then, the microwave leaks from the joint portion of the fixing member 51 at the outer peripheral portion of the microwave supply portion 2, and the loss occurs. It is preferred to minimize these losses. In this case, for example, as shown in Fig. 7, the outer surface of the outer peripheral projection portion 22d of the cover plate 22 and the lower surface of the pressing member 53 and the outer peripheral portion are respectively protruded at a position where the joint assembly 54 is to be inside the processing container 12, respectively. A joint surface of the lower portion of the portion 22d and the upper surface of the fixing member 51, and a joint surface of the lower surface of the fixing member 51 and the upper surface portion of the lid assembly 50 are provided with a metal annular microwave shielding member 60 to prevent the dielectric body. The microwave propagating in the outer peripheral direction of the board 21 overflows to the outside. The shielding unit 60 is a metal spiral shielding ring or the like. In addition, as shown in FIG. 7, the shielding assembly 60 may also be disposed at a position closer to the outer side of the processing container than the engaging assembly 54. In this case, in order to prevent the microwave from leaking from the contact faces of the cover plate 22, the fixing member 51, the pressing member 53, and the engaging member 54, it is preferable to respectively be on the outer side of the engaging member 54 and on the outer peripheral portion 22d. The lower surface of the horizontal portion 53a of the pressing member 53 and the lower end portion of the vertical portion 53b of the pressing member 53 are fixed and fixed. The upper joint surface of the assembly 51 is provided with a shield assembly 60.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited to the above examples, and can be applied to other microwave plasma devices, such as ECR plasma devices, surface wave plasma devices, and the like. Further, those skilled in the art to which the present invention pertains may be able to make various modifications or alterations within the scope of the technical scope of the invention, and it is obvious that these are also within the technical scope of the present invention.

1‧‧‧Plastic processing unit

2‧‧‧Microwave Supply Department

11‧‧‧ Wafer Holder

12‧‧‧Processing container

13‧‧‧Exhaust chamber

17‧‧‧Control Department

18‧‧‧ Sealing material

19‧‧‧Dielectric window

20‧‧‧Antenna

21‧‧‧Dielectric board (slow wave board)

22‧‧‧ Covering board

23‧‧‧Microwave generating device

24‧‧‧ coaxial waveguide

27‧‧‧Rectangular waveguide

28‧‧‧Mode Converter

30‧‧‧ gas supply port

31‧‧‧ Gas Supply Department

32‧‧‧ gas supply pipe

33‧‧‧Inactive Gas Supply Department

34‧‧‧Nitrogen Supply Department

35‧‧‧Pressure measuring agency

40‧‧‧Baffle

41‧‧‧Support components

50‧‧‧Cover assembly (Lid)

51‧‧‧Fixed components

52‧‧‧ Engagement components

53‧‧‧ Pressing components

60‧‧‧shading components

W‧‧‧ wafer

Fig. 1 is a schematic longitudinal cross-sectional view showing a configuration example of a plasma processing apparatus embodying the present invention.

Fig. 2 is a plan view showing the form of an antenna used in the plasma processing apparatus of the present embodiment.

Fig. 3 is a graph showing the correlation between the supplied electric power and the nitrogen concentration of the plasma in the plasma processing apparatus.

Fig. 4 is a graph showing the correlation between the electric power of the plasma in the plasma processing apparatus and the magnitude of change in pressure.

Fig. 5 is a graph showing the correlation between the nitrogen concentration and the magnitude of pressure change in the plasma processing apparatus.

Figure 6 is a flow chart showing the steps of determining the amount of deviation of the actual power of the microwave.

Fig. 7 is a schematic longitudinal cross-sectional view showing the structure of the upper portion of the processing container.

S1‧‧‧ will treat the exhaust in the container 12

S2‧‧‧ supply of argon

S3‧‧‧Closed processing container 12 (240Pa)

S4‧‧‧Supply microwave, generate plasma

S5‧‧‧ Calculate the correlation between pressure and electric power

S6‧‧‧ will treat the exhaust in the container 12

S7‧‧‧ supplies argon

S8‧‧‧Closed processing container 12 (240Pa)

S9‧‧‧Supply microwave, generate plasma

S10‧‧‧ Calculate the correlation between pressure and electric power

S11‧‧‧ Calculate the deviation of the actual power of the microwave

Claims (5)

A method for detecting the deviation of the actual power of the microwave in the plasma processing apparatus is for detecting the deviation of the actual power of the microwave generated between the plurality of plasma processing apparatuses in the plasma processing apparatus for treating the object to be processed by microwave plasma The plasma processing device has a microwave generating portion for generating microwaves, a processing container having an opening for performing plasma processing, and a pressure measuring mechanism for measuring a pressure in the processing container; a body window that hermetically closes an opening of the processing container; an antenna disposed on an upper surface of the dielectric window; and a waveguide that causes the microwave generated by the microwave generating portion to propagate toward the antenna and is introduced into the window a processing unit; a gas supply unit for supplying a gas into the processing container; and an exhaust unit for exhausting the inside of the processing container; wherein the plasma processing device is used to supply the gas to the discharge at a specific pressure After the gas is sealed in the processing container; the microwave is introduced into the processing container at a specific electric power to generate a plasma of the gas; and the plasma is measured in the plasma processing device The magnitude of the change in the pressure in the front processing vessel and the pressure in the processing vessel after the plasma is generated; and the correlation between the pressure variation amplitude and the microwave power supply in the other plasma processing apparatus as a reference obtained in advance Microwave between the slurry processing device and the other plasma processing device The amount of deviation of the power. A method for detecting a deviation amount of microwave actual power in a plasma processing apparatus according to the first aspect of the invention, wherein the other plasma processing apparatus as a reference has been used in a plasma processing apparatus for production of a product. A plasma processing apparatus for treating a processed object by microwave plasma, comprising: a microwave generating portion for generating microwaves; and a processing container having an opening for performing plasma processing; a dielectric window; The microwave is penetrated and introduced into the processing container; the cover assembly supports the dielectric window and closes the opening of the processing container; the antenna is disposed on the upper surface of the dielectric window; the dielectric plate, Arranging on the top of the antenna; a cover plate configured to cover the upper portion of the dielectric plate; and a waveguide connected to the cover plate and propagating the microwave toward the antenna for introduction into the processing container; The cover plate is provided with a recessed portion for accommodating the dielectric plate formed on the lower surface thereof, and the outer peripheral edge portion of the cover plate is provided with an outer peripheral protrusion formed to protrude toward the outer circumferential direction thereof, and protrudes toward the outer periphery a lower protruding portion formed on a lower portion of the portion; and an L-shaped annular fixing member supported on the cover assembly to support the outer peripheral protruding portion of the cover plate, and pressing the cover plate An upper annular pressing assembly of the outer peripheral protruding portion, a first engaging component inserted into the pressing component and the outer peripheral protruding portion of the covering plate, and fixed to the fixing component, and inserted into the fixing component and fixed to the cover assembly a second joint assembly; the vertical portion of the press assembly is formed such that an inner peripheral surface abuts against the outer peripheral protrusion of the cover plate, and an outer peripheral surface of the vertical portion of the pressing assembly abuts a vertical portion of the fixing assembly . A plasma processing apparatus according to claim 3, wherein the joint assembly is located at a position on the inner side of the processing container, at a position between an upper surface of the outer peripheral portion of the cooling plate and a lower portion of the horizontal portion of the pressing member, An annular microwave shielding assembly is disposed at a position between a lower surface of the lower protruding portion and an upper surface of the fixing member, and a position between a lower surface of the fixing assembly and an upper surface portion of the processing container. A plasma processing apparatus according to claim 3 or 4, which has a gap formed between an outer peripheral surface of the lower protruding portion of the cover sheet and an inner peripheral surface of the fixing member.