TW201302907A - Liquid resin composition and semiconductor device using the liquid resin composition - Google Patents

Abstract

According to the present invention, there is provided a resin composition for liquid packaging which simultaneously satisfies a viscosity at a sufficiently low molding temperature and a high filler for suppressing warpage, and a high reliability of the resin composition for liquid packaging Semiconductor package. The liquid resin composition of the present invention is a liquid resin containing (A) an alicyclic epoxy resin, (B) a curing agent for an epoxy resin, (C) an inorganic filler, and (D) a curing accelerator as essential components. The composition is characterized in that the total liquid resin composition contains 80% by weight or more and 95% by weight or less of the (C) inorganic filler, and the viscosity at 25 ° C is 50 Pas or more and 500 Pas or less.

Description

Liquid resin composition and semiconductor device using the liquid resin composition

The present invention relates to a liquid resin composition excellent in moldability and a semiconductor device using the liquid resin composition.

This case is based on Japan's Japanese Patent Application No. 2011-123213, which was filed on June 1, 2011, and its priority is claimed.

In order to reflect the trend of miniaturization, light weight, high integration, and high-speed operation of electronic devices in recent years, the area and volume occupied by semiconductor wafers in semiconductor packages are increasing, and wiring in semiconductor packages is becoming more and more detailed. Short. Conventionally, in order to electrically connect such a semiconductor wafer to a wiring board and operate at a high speed, a projection electrode (bump) is formed on a semiconductor wafer, and the projection is integrally joined to the wiring substrate by the projection. As a method of mounting "flip chip bonding".

This method has a problem of handling in a state in which only a semiconductor wafer to which a solder bump is attached, in most cases, and therefore is assembled to a mounting manufacturer in a state in which a semiconductor wafer-wiring substrate pair is connected and packaged. However, as the thickness and the size of the wiring substrate increase, the method for further reduction is required.

Therefore, in order to manufacture a thinner package, a method called "wafer level package (WLP)" has recently been considered, which is to set a wafer before cutting a wafer on which a semiconductor circuit is formed into individual wafers. The protruding body is connected and the entire wafer is packaged (see Patent Document 1).

However, this method has a limit on the number of IO (input/output) per unit area to be increased, and therefore a technique has been proposed in which a pre-cut semiconductor wafer is arranged on a carrier and formed into a resin by After the wafer is formed, the semiconductor circuit surface is rewiring by a certain method, whereby the package size can be controlled to be small, and high IO can be used (see Patent Document 2).

The WLP package is used for packaging large-area virtual wafers such as 8吋, 12吋, etc., and therefore requires low warpage, and can introduce a larger amount of filler (inorganic filling) compared to a general liquid package. Manufactured. However, when the amount of the filler is increased, the fluidity is deteriorated, and if there is insufficient fluidity at the molding temperature, flow marks or peeling may occur.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 3616615

[Patent Document 2] US Patent Application Publication No. 2007/205513

As described above, in the wafer-level package, since the package area is large and the package is single-sided, it is difficult to achieve both low warpage and formability.

An object of the present invention is to provide a resin composition for liquid packaging which simultaneously satisfies a sufficiently low viscosity at a molding temperature and a filler which is used for suppressing warpage, and a high reliability of a resin composition using the liquid package. Semiconductor package.

The invention is as follows:

(1) A liquid resin composition comprising (A) an alicyclic epoxy resin, (B) a curing agent for an epoxy resin, (C) an inorganic filler, and (D) a curing accelerator as essential components The liquid resin composition is characterized in that the total liquid resin composition contains 80% by weight or more and 95% by weight or less of the (C) inorganic filler, and the viscosity at 25 ° C is 50 Pas or more and 500 Pas or less.

(2) The liquid resin composition according to (1), wherein the (C) inorganic filler contains a surface treatment with a decane, and then a surface treatment is carried out with a decane coupling agent.

(3) The liquid resin composition of (2), wherein the decazane is six Methyl diazoxide.

(4) The liquid resin composition of (2) or (3), wherein the decane coupling agent has an activity selected from the group consisting of an amine group, a glycidyl group, a urea group, a hydroxyl group, an alkoxy group, and a thiol group. One or more kinds of the compound of the group.

(5) A re-arranged wafer produced by disposing a plurality of semiconductor wafers on a support and encapsulating the liquid resin composition according to any one of (1) to (4).

(6) The reconfigured wafer of item (5), wherein the package is formed by compression molding.

(7) A semiconductor package produced by singulating a reconstituted wafer according to (5) or (6).

(8) A method of manufacturing a semiconductor package, comprising: a step of disposing a plurality of semiconductor wafers on a support; and coating thereon a liquid resin composition according to any one of (1) to (4) a step of the material; and a step of forming using a mold.

By using the liquid resin composition of the present invention, a highly reliable device can be obtained in a wafer-level package, particularly in a semiconductor device manufactured by a wafer-level step of forming a wafer in a compression molding process.

[Best Mode for Carrying Out the Invention]

The present invention relates to a liquid resin composition and a semiconductor device using the resin composition, wherein the liquid resin composition is (A) an alicyclic epoxy resin, (B) a hardener for an epoxy resin, ( C) The inorganic filler and (D) the hardening accelerator is a liquid resin composition which is an essential component, and is characterized in that the total liquid resin composition contains 80% by weight or more and 95% by weight or less of (C) inorganic The filler has a viscosity at 25 ° C of 50 Pas or more and 500 Pas or less.

Hereinafter, the present invention will be described in detail.

The (A) alicyclic epoxy resin used in the present invention is not particularly limited as long as it contains two or more alicyclic epoxy groups in one molecule, and the molecular weight and structure thereof are not particularly limited, and examples thereof include ethylene. An alicyclic epoxy resin such as vinyl cyciohexene dioxide, dicyclopentadiene oxide, or alicyclic diepoxy-hexanediester.

These may be used alone or in combination of two or more. In the present invention, the epoxy resin is preferably liquid at a normal temperature (25 ° C), and is an epoxy resin which is solid at room temperature, as long as it is soluble in a liquid epoxy resin at a normal temperature, and the solution is liquid at normal temperature. The state of the shape can be. The alicyclic epoxy resin having a structure of the formulas (1) and (1A) is preferably effective from the viewpoint of low viscosity, heat resistance, and mechanical properties. In the formula (IA), R21 to R38 each independently represent a hydrogen atom, a halogen atom, a C1-6 alkyl group, a C1-6 alkyl group, a C1-6 alkyl group, or a C1-6 alkoxy group. More preferably, the alicyclic epoxy resin having the structure of the formula (2) is effective from the viewpoint of further lowering the viscosity, heat resistance, and improving mechanical properties. As the alicyclic epoxy resin of the formula (2), an alicyclic epoxy resin of the following formula (3) can be exemplified.

(In the formula, R ₁ to R ₁₈ may be the same or different and each represents a hydrogen atom, a halogen atom, or an organic group which may be substituted by a halogen atom. As the organic group, a carbon number of 1 to 6 is preferred. An alkyl group or an alkoxy group having 1 to 6 carbon atoms.)

The epoxy resin other than the above-mentioned (A) alicyclic epoxy resin is not particularly limited as long as it contains two or more epoxy groups in one molecule.

Examples thereof include a phenol novolak type epoxy resin, a phenolic epoxy resin such as a cresol novolac type epoxy resin, a bisphenol F type epoxy resin, N,N-diepoxypropylaniline, and N,N-diepoxy. Aromatic epoxy propyl amine type epoxy resin such as propyl toluidine, diaminodiphenylmethane type epoxypropylamine, amine phenol type epoxypropylamine, hydroquinone epoxy resin, and Benzene type epoxy resin, stilbene type epoxy resin, trisphenol methane type epoxy resin, trisphenol propane type epoxy resin, alkyl modified trisphenol methane type epoxy resin, containing three Ring epoxy resin, dicyclopentadiene modified phenol type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, phenol aralkyl type having a stretching phenyl group and/or a stretching phenyl skeleton An epoxy resin such as an epoxy resin or an aralkyl epoxy resin such as a naphthol aralkyl epoxy resin having a phenyl group and/or a biphenyl group.

In the present invention, the aromatic epoxy propyl ether type epoxy resin is preferred from the viewpoint of heat resistance, mechanical properties, and moisture resistance. The aliphatic epoxy propyl ether type epoxy resin is preferably limited in its amount of reliability, particularly from the viewpoint of adhesion. These may be used alone or in combination of two or more kinds to be added to the alicyclic epoxy resin.

The content of the (A) alicyclic epoxy resin is preferably from 5 to 20% by weight, more preferably from 8 to 15% by weight, based on the total liquid resin composition. When the content of the alicyclic epoxy resin is in the above range, the obtained liquid resin composition has good fluidity, heat resistance, and mechanical properties.

The hardener (B) for epoxy resin used in the present invention means 1 intramolecular A monomer, an oligomer, and a polymer having a functional group reactive with an epoxy group are not particularly limited in molecular weight and molecular structure.

For example, a phenol novolac resin, a cresol novolak resin, a dicyclopentadiene-modified phenol resin, a terpene-modified phenol resin, a trisphenol methane-type resin, a phenol aralkyl resin (having a stretching phenyl skeleton, a co-extension benzene) Phenolic or the like, phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, 3-methyl-hexahydrophthalic anhydride, etc. 4-methyl-hexahydrophthalic anhydride, or a mixture of 3-methyl-hexahydrophthalic anhydride and 4-methyl-hexahydrophthalic anhydride, tetrahydrophthalic anhydride, Anhydride such as nadic anhydride or methyl nadic anhydride.

In the case where the hardening at a low temperature is fast and the glass transition temperature of the cured product is improved, the curing agent is preferably an acid anhydride. Further, it is liquid at room temperature (25 ° C) and has a low viscosity, and it is more preferable to use an acid anhydride represented by the formula (4) as a hardener. The curing agent is not particularly limited thereto, and may be used alone or in combination of two or more.

The content of the (B) epoxy resin hardener is preferably from 5 to 20% by weight, more preferably from 8 to 15% by weight, based on the total liquid resin composition. When the content of the curing agent for the epoxy resin is in the above range, the obtained liquid resin composition has good fluidity, heat resistance, and mechanical properties.

As the inorganic filler (C) used in the present invention, those generally used for packaging materials can be used. For example, molten cerium oxide, crystalline cerium oxide, synthetic cerium oxide powder, talc, alumina, cerium nitride, or the like may be used as a surface treatment or as a non-implementer; these can be used alone. It is also possible to use two types or more together. Among these, from the viewpoint of heat resistance, moisture resistance, strength, and the like of the resin composition, molten cerium oxide, crystalline cerium oxide, and synthetic cerium oxide powder are preferable. . The shape of the inorganic filler is not particularly limited, but the shape is preferably spherical in view of viscosity characteristics and flow characteristics.

The average particle diameter of the inorganic filler is not particularly limited, but is preferably 0.1 to 50 μm, and a fine particle having an average particle diameter of 0.1 to 3 μm and a coarse particle having an average particle diameter of 4 to 50 μm may be used in combination.

For the fine particles having an average particle diameter of 0.1 to 3 μm, those subjected to surface treatment are preferred. More preferably, the surface treatment is carried out with a decane alkane, followed by a surface treatment with a decane coupling agent.

The content of the (C) inorganic filler is a balance of formability and weld fracture resistance, and it is required to use 80 to 95% by weight, more preferably 85 to 92% by weight, based on the total epoxy resin composition. When the content of the inorganic filler is in the above range, the obtained liquid resin composition has good fluidity and resistance to weld cracking due to water absorption.

(C) The inorganic filler is subjected to a surface treatment with a decazane, and then the content of the inorganic filler to be surface-treated with a decane coupling agent is preferably 5 to 50% by weight based on the total epoxy resin composition. If it is in the above range, it has a good dispensing property.

The surface treatment is carried out with decane, and then the surface treatment is carried out with a decane coupling agent, and the decazane is used first, thereby imparting an organic affinity to the inorganic filler, thereby improving the efficiency of subsequent treatment with the decane coupling agent. Here, the ratio of the amount of the decane alkane to the amount of the decane coupling agent is preferably from 1/100 to 1/5 by weight based on the amount of the decane coupling agent. When it is in the above range, the decazane can react with the surface of the inorganic filler to impart good organic affinity, and the reaction between the decane coupling agent and the surface of the inorganic filler, that is, the metal oxide can be performed without excessive or insufficient. As a treatment method, for example, a method in which an inorganic filler is added to a mixer and a guanidinium is sprayed under a nitrogen gas stream while being stirred, and then a decane coupling agent is sprayed to perform a treatment.

Examples of the decane alkane used in the present invention include hexamethyldioxane, Hexaphenyldioxane, tetramethyl-1,3-diphenyldioxane, 1,1,3,3-tetramethyl-1,3-divinyldioxane, 2, 2,4,4,6,6-hexamethylcyclotriazane, octamethylcyclotetraazane, and the like. Among them, a compound selected from the group consisting of decazanes such as hexamethyldiazepine or hexaphenyldioxane or a combination thereof is preferred. Among them, hexamethyldioxane (HMDS) inhibits the coagulation of ceria, makes the acidic ceria alkaline, enhances the affinity for organic matter and enhances uniformity, while suppressing the alicyclic group. The cationic polymerization of an epoxy group is preferred to improve the stability of the epoxy resin.

The decane coupling agent used in the present invention is a compound having a reactive group selected from an amine group, a glycidyl group, a decyl group, a ureido group, a hydroxyl group or an alkoxy group, or a combination thereof. Specifically, as the decane coupling agent, an epoxy decane or an amine propyl group such as γ-glycidoxypropyltriethoxy decane or β-(3,4-epoxycyclohexyl)ethyltrimethoxy decane can be exemplified. Amino decane such as triethoxy decane, ureidopropyl triethoxy decane, N-anilinopropyltrimethoxy decane, phenyltrimethoxydecane, methyltrimethoxydecane, octadecyltrimethyl A hydrophobic decane compound such as oxydecane or decyl decane or the like.

The curing accelerator (D) used in the present invention may be any one which can be used for packaging materials as long as it can promote the reaction between the epoxy group and the curing agent. For example, a phosphonium salt, a triphenylphosphine, an imidazole compound, etc. are mentioned, but it is not limited to these. These hardening accelerators may be used singly or in combination. Preferred is a phosphonium salt having a structure of the formula (5) or (6), a triphenylphosphine having the structure of the formula (7), an imidazole compound having a structure of the formula (8) or the formula (9), It is effective from the viewpoint of low viscosity. Examples of the curing accelerator of the formula (5) include the following formulas (10), (11), and (12).

(In the formula (5), R1, R2, R3, and R4 are an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring, and at least one of them has at least one proton which can be released to the outside of the molecule. The proton donor releases a base of protons, which may be identical to each other or different from each other.)

(In the formula (6), Ar represents a substituted or unsubstituted aromatic group, and two oxygen atoms in the same molecule are located adjacent to the aromatic carbon. n represents an integer of 2 to 12.)

Further, examples of the curing accelerator of the formula (6) include the following formulas (13) and (14).

Further, for example, a curing accelerator represented by the following formula (15) can be mentioned.

The content of the (D) hardening accelerator is preferably 0.01 to 0.30% by weight, more preferably 0.05 to 0.20% by weight, based on the total liquid resin composition. When the content of the hardening accelerator is in the above range, the obtained liquid resin composition has good reactivity, storage stability, and insulation reliability.

In the present invention, as the component which can be used in addition to the above, for example, an antimony compound as an antifoaming agent, a release agent such as a wax, a low stress member, a flame retardant or the like can be mentioned, and it can be added depending on the desired properties.

In the present invention, the viscosity at room temperature (25 ° C) means the viscosity measured by an E-type viscosity meter, and the measurement conditions are as follows. That is, the 3°R.7.7 type cone was attached to an E-type viscometer, and the viscosity at the time of measurement was performed at 25° C. at 2.5 rpm.

As a result of research by the inventors of the present invention, the viscosity at room temperature is related to the result of compression moldability. When the viscosity is too high, there is a problem that the coating cannot be applied by a syringe or the coating accuracy is deteriorated, and the viscosity is required to be Below 500Pas. Further, the lower limit of the viscosity is required to be 50 Pas or more, so that when the resin is applied, the resin is prevented from flowing from the end of the coated surface and overflows.

The viscosity at room temperature is preferably from 100 to 350 Pas.

In the present invention, the viscosity at the molding temperature means the viscosity measured by a rheometer, and the measurement conditions are as follows. In other words, the resin composition for liquid encapsulation was sandwiched between 25 φ plates, and the lowest viscosity at the molding temperature was measured under a shear pressure of 100 Pa.

According to the study by the inventors of the present invention, the viscosity at the molding temperature is related to the result of the compression moldability. When the viscosity is too high, moldability such as unfilling or flow marks may occur, and therefore it is preferably 50 Pas or less. Further, the lower limit of the viscosity is preferably 0.5 Pas or more to suppress excessive flow of the resin at the time of resin formation. The viscosity at the forming temperature is preferably 1.0 to 30 Pas.

As described above, when the ratio of the inorganic filler is increased, the viscosity at normal temperature rises, resulting in a decrease in workability. The same is true for the viscosity when hot. If the thermal viscosity is controlled within a viscosity range suitable for compression molding, the content of the inorganic filler needs to be maintained at 80% by weight or more, and it is difficult to avoid poor formability. However, depending on the type of the inorganic filler, the type of the curing agent, and the type of the hardening accelerator which is a trace additive, the amount of the filler may be increased while maintaining the viscosity at the time of heat.

As a method for producing the liquid resin composition of the present invention, each component, additive, or the like is dispersed and kneaded by a device such as a planetary mixer, a three-roll mill, a twin-heat roll mill, or a kneading machine. It is produced by performing a defoaming treatment under vacuum.

The method of manufacturing the semiconductor device of the present invention is, for example, the following various methods, but is not limited thereto.

That is, on the carrier (the support having the adhesive layer which can be peeled off again), it is known in advance that the semiconductor wafer to be operated is arranged with its active surface facing downward, and the required amount is set at a normal temperature by a dispenser or the like. The liquid-form encapsulating resin composition of the invention is applied thereon, and after compression molding at a predetermined molding temperature by a molding die, the carrier is peeled off to obtain a semiconductor-formed wafer-like resin cured product. The surface of the obtained semiconductor-formed wafer-like resin cured product is spin-coated with a polyimide resin and cured to form an insulating film layer, and then patterned on the active surface of the semiconductor wafer. The electrode pad portion is perforated. The surface of the polyimide film is applied from the opening portion to the surface of the polyimide resin to perform rewiring processing and formation of the protruding body for mounting. Thereafter, a semiconductor device is produced by singulating into a suitable size.

[Examples]

Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited thereto.

[Example 1]

(1) As the alicyclic epoxy resin (A), an alicyclic epoxy resin represented by the formula (3) is 100 parts by weight.

(2) As a curing agent for epoxy resin (B), methyltetrahydrophthalic anhydride MT-500 120 parts by weight of Nippon Chemical Co., Ltd.

(3) Inorganic filler (C), inorganic filler 1 FB-74 (melt spherical cerium oxide, average particle diameter 30 μm) 1500 parts by weight of Electric Chemical Industry Co., Ltd.

(4) 100 parts by weight of SO-E2 (melt spherical cerium oxide, an average particle diameter of 0.5 μm, manufactured by Admatechs Co., Ltd.) was added to a mixer as an inorganic filler (C), and was sprayed under a nitrogen gas stream while stirring. After adding 0.1 part by weight of hexamethyldioxane (HMDS), 1 part by weight of γ-glycidoxypropyltrimethoxydecane (a decane coupling agent, trade name KBM-403, Shin-Etsu Chemical Co., Ltd.) was spray-added. 700 parts by weight of the inorganic filler 2 obtained by the industrial company)

(5) As the hardening accelerator (D), the hardening accelerator represented by the formula (12) is 7 parts by weight.

(6) Epoxy decane coupling agent: γ-glycidoxypropyltrimethoxy decane KBM-403E 7 parts by weight of Shin-Etsu Chemical Co., Ltd.

The above materials were taken into a beaker and mixed with a spatula, and then kneaded by a three-roll mill for 3 times, placed in a beaker and vacuum oven (normal temperature, 5 mmHg). The defoaming treatment was carried out for a minute to obtain a liquid resin composition.

(a) Viscosity measurement: A 3°R.s. type 7.7 cone was attached to an E-type viscometer, and measurement was performed at 25° C. at 2.5 rpm. The touch modification was based on the results measured at 2.5 and 0.5 rpm and was calculated as follows. That is, [viscosity at 0.5 rpm] ÷ [viscosity at 2.5 rpm].

(b) Viscosity measurement at 125 °C: Using a Haake rheometer RS-150, sampling 100 data in 5 minutes with a cone size of 25 mm, a temperature of 125 ° C, a constant pressure of 100 Pa, and a frequency of 1 Hz. The lowest value.

(c) Adhesive force: A liquid resin composition produced by applying a bright etching surface to a back surface of a wafer having a mirror shape and a thickness of 625 μm which was cut into a square of 10 mm. After sandwiching this, the adhesion measuring nail (made of copper) was attached, heat-hardened at 125 ° C for 10 minutes, and then post-hardened at 150 ° C for 1 hour to obtain a measurement sample. The nail has a backing area of 10 mm ² . One side of the semiconductor wafer was fixed by a jig, and this was attached to a measuring apparatus (Dage 4000, manufactured by Dage Co., Ltd.), and was lifted in a vertical direction at 25 ° C to measure the adhesion.

The liquid resin composition thus produced had a viscosity of 25 Pa s at 25 ° C, a touch modification of 1.0, a viscosity of 5 Pa ‧ at 125 ° C, and a bonding strength of 30 N.

(d) Formability assessment

A semiconductor wafer (Phase 8, manufactured by Hitachi Super-LSI Co., Ltd., 350 μm thick) which is subjected to circuit wiring on a semiconductor wafer was cut into a square shape of 7 mm by a dicing apparatus to obtain a semiconductor wafer. Next, 8 Å wafer (725 μm thick) was used as a carrier, and a peelable thermal foam film (REVALPHA, manufactured by Nitto Denko Corporation) was produced at a normal temperature and then on a foamed surface of a thermal foam film. Support the substrate. The semiconductor wafer is mounted by a wafer mounter (DB200, manufactured by SHIBUYA KOGYO Co., Ltd.) so that the active surface of the semiconductor wafer having the electrode is placed on the support substrate at an appropriate interval. The support substrate with the semiconductor wafer is mounted on a compression molding machine, and an appropriate amount of the liquid resin composition is placed thereon, and the molding pressure is 3 MPa or 1 MPa. The wafer was hardened at 125 ° C for 10 minutes. The amount of the liquid resin composition was adjusted so that the thickness of the resin after molding was 600 ± 10 μm.

After the wafer is subjected to heat treatment in an oven at 150 ° C for 1 hour and post-hardened, after the support substrate is peeled off, it is placed on an adsorbable hot plate at 200 ° C to foam the thermal foam film, and will be supported. The wafer portion of the substrate is peeled off, and then the thermal foam film itself is peeled off from the wafer, whereby a plurality of semiconductor wafers are exposed to the surface to be repositioned.

The formed sample was evaluated for visual observation and presence or absence of peeling by visual observation. The flow mark refers to a white flow trace that remains radially outward from the center of the molded product. When a flow mark is generated, there is a defect in appearance, unevenness in physical properties of the cured product due to uneven dispersion of cerium oxide, or a decrease in reliability associated therewith. The term "peeling" refers to the peeling at the interface between the molded article and the thermal foaming film. When peeling occurs, there is a possibility that the wafer is misaligned or dropped during transport, or the warpage is increased. As a result of using the liquid resin composition of Example 1, no flow marks or peeling were observed.

[reliability assessment]

The resulting re-disposed wafer was spin-coated (DSPIN80A, SOKUDO, 1500 rpm, 30 seconds) photosensitive buffer coating material, and then pre-baked (125 ° C, 5 minutes) with the same device for reconfiguration An insulating film for rewiring is formed on the surface of the wafer. In order to open the insulating film at each connection pad position of the semiconductor wafer, light irradiation (broadband aligner MA-8, manufactured by SUSS MicroTech Co., Ltd., 500 mJ/cm ² ) is used to develop the developer (TMAH2). .38%, 23 ° C, stirring for 2 times in 2 seconds) Development, and final hardening (250 ° C, 1.5 hours). Next, titanium and copper were sequentially formed on the buffer coating by a sputtering machine (SPF-740H, manufactured by CANON ANELVA ENGINEERING Co., Ltd.) to a thickness of 500 Å and 3,000 Å. Here, a photoresist (Sunphoto 155, manufactured by Asahi Kasei E-materials Co., Ltd.) was applied, and exposure and development of the photoresist were performed using a mask for the rewiring circuit. Further, after forming a copper layer having a thickness of 10 μm as a whole by copper plating, the photoresist was peeled off. In this state, since the unnecessary copper and titanium layers remain on the buffer coating surface, the etching is removed by etching, and then the buffer coating is again applied by spin coating, and the openings are opened at other positions after rewiring. The copper layer for connecting the protrusions is exposed. Rewiring is carried out according to the above procedure.

The re-arranged wafer for completion to rewiring was singulated into a 15 mm square by a dicing machine, and thus assembled into a semiconductor package device for reliability testing.

(e) Welding heat resistance test

The singulated semiconductor device was subjected to a treatment at 125 ° C for 20 hours, and then subjected to a moisture absorption treatment for 168 hours under the conditions of 85 ° C and 85% RH. This was passed through a reflow oven which was previously set to a maximum temperature of 260 ° C and 255 to 260 ° C for 30-0 + 3 seconds for the solder heat resistance test.

For the sample after the test, the internal peeling state was confirmed in a non-destructive manner by a 25 MHz probe by means of an ultrasonic detecting device (FineSAT FS300 type, manufactured by Hitachi Construction Machinery Co., Ltd.). Regarding the area of the semiconductor wafer, the case where the total peeling area was about 10% or less was evaluated as "small peeling", and when the peeling area was higher than the value, it was evaluated as "peeling", and the number of the semiconductor devices having the peeling was counted. As a result of using the liquid resin composition of Example 1, no fine peeling and peeling were observed.

[Example 2-15], [Comparative Example 1-5]

A liquid resin composition was obtained in the same manner as in Example 1 in accordance with the blending amounts of Tables 1 and 2, and evaluated in the same manner as in Example 1. The results are shown in Tables 1 and 2.

The raw materials used in addition to Example 1 are as follows:

‧ as an alicyclic epoxy resin (A), an alicyclic epoxy resin represented by formula (1)

‧As another epoxy resin, bisphenol F type epoxy resin SB-403S made by Nippon Kayaku Co., Ltd.

‧ As a hardener for epoxy resin (B), phenol phenolic resin: MEH-8000 made by Minghe Chemical Co., Ltd.

‧ As an inorganic filler (C), 100 parts by weight of SO-E2 (melted spherical cerium oxide, an average particle diameter of 0.5 μm, manufactured by Admatechs Co., Ltd.) was added to a mixer. After adding 0.1 part by weight of hexamethyldioxane (HMDS) by spraying under a nitrogen gas stream, 1 part by weight of N-phenyl-3-aminopropyltrimethoxydecane (decane) was sprayed. A coupling agent, trade name KBM-573, manufactured by Shin-Etsu Chemical Co., Ltd.) to obtain an inorganic filler 3 for processing powder

‧ As an inorganic filler (C), 100 parts by weight of SO-E2 (melted spherical cerium oxide, an average particle diameter of 0.5 μm, manufactured by Admatechs Co., Ltd.) was placed in a mixer, and sprayed under a nitrogen gas stream while stirring 0.1 After the treatment of hexamethyldioxane (HMDS) in parts by weight, 1 part by weight of 3-propenyloxypropyltrimethoxydecane (decane coupling agent, trade name KBM-5103, manufactured by Shin-Etsu Chemical Co., Ltd.) was spray-added. ) to obtain an inorganic filler 4 for processing powder

‧ As an inorganic filler (C), 100 parts by weight of SO-E2 (molten spherical cerium oxide, an average particle diameter of 0.5 μm, manufactured by Admatechs Co., Ltd.) was placed in a mixer, and sprayed under a nitrogen gas stream while stirring. Ingredient γ-glycidoxypropyltrimethoxydecane (a decane coupling agent, trade name KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.) to obtain an inorganic filler 5 for treating powder

‧ As an inorganic filler (C), 100 parts by weight of SO-E2 (melted spherical cerium oxide, an average particle diameter of 0.5 μm, manufactured by Admatechs Co., Ltd.) was placed in a mixer, and sprayed under a nitrogen gas stream while stirring 0.1 After the treatment of hexaphenyldioxane (HFDS) in parts by weight, 1 part by weight of γ-glycidoxypropyltrimethoxydecane (a decane coupling agent, trade name KBM-403, Shin-Etsu Chemical Co., Ltd.) was spray-added. Inorganic filler 6 for treating powder

‧ As inorganic filler (C), inorganic filler 7 SO-E2 (melted spherical cerium oxide, average particle size 0.5 μm), manufactured by Admatechs

‧ as a hardening accelerator (D), a hardening accelerator represented by formula (15)

[Table 2]

[Industrial use]

By using the liquid resin composition of the present invention, a highly reliable device can be obtained in a wafer-level package, particularly in a semiconductor device manufactured by a wafer-level step of forming a wafer in a compression molding process. Therefore, the present invention is extremely useful in the industry.

Claims (8)

A liquid resin composition comprising (A) an alicyclic epoxy resin, (B) a curing agent for an epoxy resin, (C) an inorganic filler, and (D) a curing accelerator as a liquid resin. The composition is characterized in that the total liquid resin composition contains 80% by weight or more and 95% by weight or less of the (C) inorganic filler, and the viscosity at 25 ° C is 50 Pas or more and 500 Pas or less. The liquid resin composition of the first aspect of the invention, wherein the (C) inorganic filler comprises a surface treatment with a decane, and then a surface treatment with a decane coupling agent. The liquid resin composition of claim 2, wherein the decazane is hexamethyldioxane. The liquid resin composition of claim 2 or 3, wherein the decane coupling agent is a compound having an active group selected from the group consisting of an amine group, a glycidyl group, a ureido group, a hydroxyl group, an alkoxy group, and a fluorenyl group. One or more. A re-arranged wafer in which a plurality of semiconductor wafers are disposed on a support and packaged by using a liquid resin composition as disclosed in any one of claims 1 to 4. The reconfigured wafer of claim 5, wherein the package is formed by compression molding. A semiconductor package produced by singulating a reconfigured wafer according to claim 5 or 6. A method of manufacturing a semiconductor package, comprising the steps of: disposing a plurality of semiconductor wafers on a support; and applying the liquid resin composition according to any one of claims 1 to 4; And the step of forming using a mold.