TW201309850A - Wire forming method and etchant composition for copper-based metal film - Google Patents

Abstract

The present invention provides a wiring method which uses an etchant to form a copper-based metal film and can minimize corrosion of the metal oxide film at lower part and only etch the copper film at upper part in the double layered film consisting of the metal oxide film and the copper film, and also provides an etchant composition used for aforementioned copper-based metal film. The wire forming method includes: (I) forming a metal oxide film on a substrate; (II) forming a copper-based metal film on the metal oxide film; (III) selectively retaining photo-reactive substance on the copper-based metal film; and (IV) using an etchant composition to only etch the copper-based metal film at upper part, wherein the etchant composition is characterized by containing (A) 5 to 25 wt% hydrogen peroxide (H2O2), (B) 0.1 to 5 wt% azole compound and (C) remainder containing water and additive.

Description

Wiring forming method and etching liquid composition for copper-based metal film

The present invention relates to an etching liquid composition of a copper-based metal film and a wiring forming method of a copper-based metal film using the above etching liquid composition.

In a liquid crystal display device, a process of forming a metal wiring on a substrate is generally performed by a metal film forming technique based on sputtering or the like, a photoresist forming technique in a selective region based on photoresist coating, exposure and development, and etching based on The technical steps consist of cleaning techniques such as individual unit technology before and after. The etching technique refers to a technique in which a photoresist is used as a mask and a metal film is left in a selective region, usually using dry etching using plasma or the like, or wet etching using an etching liquid composition. .

These wirings are proposed in a variety of films depending on the driving method, the resolution to be achieved, and the like. The most common one is a gate electrode and a source/drain wiring using a laminated film of a molybdenum-based metal film and an aluminum-based metal film, copper is used as a conductive film, and molybdenum or titanium is used as a wiring of a barrier metal. Wait. In addition, although the wiring of the multilayer film based on the copper and indium oxide film is used in the FFS mode or a part of the in-plane switching mode, in the case of the above multilayer film, only etching is required as needed. The case where the upper copper film is used to form a multilayer film. However, the development of an etching solution for this has not been carried out.

An etching solution for batch etching a copper metal layer and a transparent conductive layer containing nitric acid, hydrochloric acid, hydrogen peroxide, or an azole compound is disclosed in Korean Laid-Open Patent Publication No. 2005-0067934. However, in the case of the above patent, there is a problem that the indium oxide film as the lower film is also etched except for the upper copper film.

[Prior Art Literature] [Patent Literature]

(Patent Document 1) KR2005-0067934A

It is an object of the present invention to provide an erosion of a metal oxide film during wet etching of a multilayer metal layer composed of a metal oxide film and a copper-based metal film, and to form a flat layer during etching of the copper layer. A taper profile excellent in straightness, an etchant composition of a copper-based metal film which does not leave a residue of a metal film after etching.

Further, an object of the present invention is to provide a wiring forming method of a copper-based metal film using the above etching liquid composition.

The present invention provides an etchant composition for a copper-based metal film, characterized in that it comprises: A) hydrogen peroxide (H ₂ O ₂ ) 5.0 to 25.0 wt%, and B) an azole compound 0.1~ with respect to the total weight of the composition. 5.0 wt%; C) remaining water; and D) additives.

Further, the present invention provides a wiring forming method of a copper-based metal film, comprising the steps of: I) forming a metal oxide film on a substrate; II) forming a copper-based metal film on the metal oxide film; and III) forming a copper-based metal film; Selectively leaving a photoreactive material on the metal film; and IV) etching only the upper copper-based metal film of the upper portion using the etching liquid composition of the present invention.

When the etching liquid composition of the present invention etches a copper-based metal film on the upper portion of the two-layer film composed of the metal oxide film and the copper-based metal film, when the lower metal oxide film is not eroded (Attack), A tapered cross-section having excellent etching uniformity and flatness is achieved, and no residue is generated. Therefore, problems such as electrical short-circuit, poor wiring, and reduction in brightness are not caused.

Therefore, the etching liquid composition of the present invention can be very useful in the production of an array substrate for a liquid crystal display device which realizes a large-screen, high-luminance circuit. Use.

Hereinafter, the present invention will be described in detail as follows.

The present invention relates to an etching liquid composition and a wiring forming method for greatly improving stability, so that a copper-based metal film is etched without overheating. Among them, the above etching liquid composition is characterized in that it contains an azole compound and water in addition to hydrogen peroxide, and additionally contains an additive.

In the present invention, the copper-based metal film contains copper in the constituent components of the film, and the copper-based metal film refers to pure copper, copper nitride, copper oxide or copper alloy.

The above copper alloy refers to pure copper, copper nitride or copper oxide and from aluminum (Al), magnesium (Mg), calcium (Ca), titanium (Ti), silver (Ag), chromium (Cr). Selection of groups consisting of manganese (Mn), iron (Fe), zirconium (Zr), niobium (Nb), molybdenum (Mo), palladium (Pd), hafnium (Hf), tantalum (Ta) and tungsten (W) An alloy of more than one metal.

In the present invention, the etching liquid composition of the copper-based metal film refers to an attack on the metal oxide film as the lower layer in the multilayer film composed of the above-described copper-based metal film and metal oxide film. An etchant composition that minimizes and etches only copper as an upper layer.

In the present invention, the metal oxide film is a film composed of a ternary or quaternary oxide represented by the following formula 1, and may be referred to as a film of an oxide semiconductor layer or a film constituting an oxide semiconductor layer.

[Formula 1] AxByCzO

In the above formula, A, B and C are each independently Zn, Cd, Ga, In, Sn, Hf, Zr or Ta, and x, y and z are each independently a rational number greater than or equal to zero.

In the present invention, examples of the multilayer film of the copper-based metal film and the metal oxide film include a copper indium oxide film (ITO), a copper indium oxide film, and a copper gallium zinc oxide film (IGZO). The above copper indium oxide film refers to a multilayer film including an indium oxide-based metal film and a copper-based metal film formed on the above indium oxide-based metal film. The above copper indium oxide-based alloy film refers to a multilayer film including an indium oxide-based alloy film and a copper-based metal film formed on the above indium oxide alloy film. The above copper gallium zinc oxide film (IGZO) refers to a multilayer film including a gallium zinc oxide film (IGZO) and a copper-based metal film formed on the above gallium zinc oxide film (IGZO). The order of lamination of the above-described copper-based metal film and metal oxide film can be interchanged.

Etching liquid composition

The A) hydrogen peroxide (H ₂ O ₂ ) contained in the etching liquid composition of the present invention is a main component of the etching copper-based metal film, and the content thereof is 5.0 to 25.0% by weight based on the total weight of the composition, preferably 15.0~23.0wt%. If the content is less than the above range, the copper-based metal film cannot be etched or the etching rate becomes very slow. If the content exceeds the above range, since the etching speed as a whole becomes faster, technical control becomes difficult.

The above B) azole compound contained in the etching liquid composition of the present invention serves to adjust the etching rate of the copper-based metal and reduce the line loss of the pattern (CD Loss) to improve the technical margin.

The content of the above B) azole compound is from 0.1 to 5.0% by weight, preferably from 0.5 to 1.5% by weight, based on the total weight of the composition. If the content is lower than the above range, the etching speed becomes faster and the line width loss may occur excessively. If the content exceeds the above range, the etching rate of the copper-based metal film becomes too slow, and there may be a problem in performance.

The above B) azole compound is preferably derived from aminotetrazole, benzotriazole, tolyltriazole (tolyltriazole), pyrazole, pyrrole, imidazole, 2-methylimidazole, 2-ethylimidazole, 2-propylimidazole, 2-aminoimidazole, 4-methylimidazole, One or more selected from the group consisting of 4-ethylimidazole and 4-propylimidazole.

The water of C) contained in the etching liquid composition of the present invention is not particularly limited, but is preferably deionized water. More preferably, the specific resistance value of the water (ie, the degree to which ions in the water are removed) is 18 MΩ. Deionized water above cm. The above C) water is included in the etching liquid composition of the present invention in the balance to have a total weight of 100% by weight.

The D) additive may also be included in the etching solution composition of the present invention.

The above additive is one or more selected from the group consisting of a sulfonic acid, an organic peracid, and a phosphonic acid derivative and a salt thereof.

The above sulfonic acid is a generic term for a compound having -SO ₃ H, which may be either an inorganic sulfonic acid or an organic sulfonic acid (RSO ₃ H), but an organic sulfonic acid is preferably used. The above sulfonic acid is dissociated in an aqueous solution (RSO ₃ H→-RSO ₃ ^- +H ⁺ ) to exhibit an acid property. The acidity of the above sulfonic acid is much stronger than that of a carboxylic acid such as acetic acid, and is almost similar to that of sulfuric acid. Therefore, it is effective to adjust the etching rate of the copper-based metal film by adjusting the pH of the etching solution to increase the activity of hydrogen peroxide. At the same time, it may play a role in reducing the taper angle of the etched surface. Further, the above sulfonic acid suppresses the activity of copper ions by lowering the pH to suppress the decomposition reaction of hydrogen peroxide. When the activity of the copper ions is lowered as described above, the technique can be stably performed in the process of using the etching liquid. In addition, when the sulfonic acid is contained in the etching liquid composition of the present invention, soft etching (S/E) is excellent at the time of etching, and the metal film to be etched is excellent in taper angle and flatness.

The sulfonic acid content is 0.5 to 5.0% by weight based on the total weight of the composition. It is preferably 1.0 to 3.0% by weight. If the content is lower than the above range, the etching rate is lowered. If the content exceeds the above range, the problem that the etching moderately becomes too fast occurs.

The above sulfonic acid is preferably derived from Amidosulfonic acid, Methanesulfonic acid, Ethanesulfonic acid, p-Toluenesulfonic acid, trifluoromethanesulfonic acid. One or two or more selected from the group consisting of (Trifluoromethanesulfonic acid), Benzenesulfonic acid, sulfamic acid, and polystyrene sulfonic acid.

The above organic peroxyacid enhances the activity of hydrogen peroxide by adjusting the pH of the etching solution to adjust the etching rate of copper, and at the same time acts as an auxiliary oxidizing agent for the copper film. Further, the activity of Cu ions is suppressed by lowering the pH to suppress the decomposition reaction of hydrogen peroxide. The above organic peracid is preferably contained in an amount of from 1 to 5 % by weight, more preferably from 1 to 3 % by weight based on the total weight of the composition. If the content of the above organic peroxyacid is 1% by weight or less, since the pH adjustment effect is not large, Cu unetching may occur. If it exceeds 5 wt%, the technical control becomes due to an excessively fast etching rate. difficult.

The above organic peroxyacid may be Peracetic Acid, Perbenzoic acid or a mixture thereof, but is not limited thereto.

When the copper ion film and the salt thereof are etched, the copper ions dissolved in the etching solution are chelated to suppress the activity of the copper ions, thereby suppressing the decomposition reaction of hydrogen peroxide. When the activity of copper ions is lowered as described above, it is stable during use of the etching solution Conducting technology on a fixed basis. The above phosphonic acid derivatives and salts thereof are preferably contained in an amount of from 3 to 15% by weight, more preferably from 5 to 10% by weight based on the total weight of the composition.

When the content of the above phosphonic acid derivative and its salt is contained in an amount of 3 wt% or less based on the total weight of the composition, there is a problem that the etching uniformity is lowered and the decomposition of hydrogen peroxide is accelerated, and the treatment performance (Capa) is not large. If the content of the above phosphonic acid derivative and its salt is more than 15.0% by weight based on the total weight of the composition, a problem that the etching speed of the copper film is too fast may occur, resulting in difficulty in technical control and an increase in viscosity. There is a need to increase the suction capacity of the etching device.

The above phosphonic acid derivatives and salts thereof may be used as long as they are generally used in the art, and for example, preferably used from 2-Aminoethylphosphonic acid (2-AEP), A Dimethyl methylphosphonate (DMMP), 1-Hydroxy Ethylidene-1, 1-Diphosphonic Acid (HEDP), Aminotris (methylene) Amino tris (methylene phosphonic acid, ATMP), Ethylenediamine tetra(methylene phosphonic acid, EDTMP), tetramethylene diamine tetra (methylene phosphine) (Tetramethylenediamine tetra(methylene phosphonic acid), TDTMP), Hexamethylenediamine tetra(methylene phosphonic acid), HDTMP, Diethylenetriamine-5 (methylenephosphonic acid) (Diethylenetriamine penta (methylene phosphonic acid), DTPMP), Phosphonobutane-tricarboxylic acid (PBTC), N-(phosphonomethyl)imidodiacetic acid (N-(phosphonomethyl) Iminodiacetic acid, PMIDA), 2-carboxyethylphosphonic acid Acid, CEPA), 2-Hydroxyphosphonocarboxylic acid (HPAA) and Amino-tris-(methylene-phosphonic acid, AMP); One or a mixture of two or more selected from the group consisting of salts, preferably a sodium salt or a potassium salt. More preferably, the above phosphonic acid derivative salt may be a sodium salt or a potassium salt of 1-hydroxyethylidene-1,1-diphosphonic acid.

The etchant composition of the present invention may further comprise a surfactant. The above surfactant acts to lower the surface tension to increase the uniformity of etching. The above surfactant is not particularly limited as long as it can withstand the composition of the etching liquid and is commercially available, but is preferably composed of an anionic surfactant, a cationic surfactant, a zwitterionic surfactant, and a nonionic surface active agent. One or more selected from the group consisting of a agent and a polyol surfactant.

Further, in addition to the above-described components, a usual additive may be added, and examples of the additive include a metal ion sequestering agent and a corrosion inhibitor.

The hydrogen peroxide (H ₂ O ₂ ), the azole compound, the sulfonic acid, the organic peracid, and the phosphonic acid derivative and salts thereof used in the present invention can be produced by a generally known method, and the etching liquid composition of the present invention is preferably used. The ground has the purity for semiconductor technology.

When the copper-based metal film is etched, the etching liquid composition of the present invention can achieve a tapered cross section excellent in etching uniformity and flatness without eroding the metal oxide film. Since the etching liquid composition of the present invention does not generate residue during etching, it is advantageous in solving problems such as electrical short circuit, wiring failure, and reduction in brightness. Therefore, the etching liquid composition of the present invention is used for manufacturing an array substrate for a liquid crystal display device which realizes a large-screen, high-luminance circuit. It can be used very usefully.

2. Wiring formation method

The wiring forming method of the present invention comprises the steps of: I) forming a metal oxide film on a substrate; II) forming a copper-based metal film on the metal oxide film; and III) selectively leaving on the copper-based metal film. The photoreactive material; and IV) etching only the upper copper-based metal film of the upper portion using the etching liquid composition of the present invention.

In the wiring forming method of the present invention, the photoreactive material is preferably a usual photoresist material which can be selectively left by a usual exposure and development technique.

Hereinafter, the present invention will be described in detail by way of examples and the like. However, the following examples and the like are merely provided to explain the present invention in more detail, and the scope of the invention is not limited thereto.

Example 1 to Example 7, and Comparative Example 1 to Comparative Example 3: Preparation of an etchant composition containing a sulfonic acid

180 kg of the etching liquid compositions of Examples 1 to 7 and Comparative Examples 1 to 3 were prepared in accordance with the compositions shown in Table 1 below.

PTSA: p-toluenesulfonic acid SFA: sulfanilic acid

Example 8 to Example 14, and Comparative Example 4 to Comparative Example 6: Preparation of an etching solution composition containing an organic peracid

180 kg of the etching liquid compositions of Examples 8 to 14 and Comparative Examples 4 to 6 were prepared in accordance with the compositions shown in Table 2 below.

Example 15 to Example 21, and Comparative Example 7 to Comparative Example 9: Preparation of an etching solution composition containing a phosphonic acid derivative

180 kg of the etching liquid compositions of Examples 15 to 21 and Comparative Examples 7 to 9 were prepared in accordance with the compositions shown in Table 3 below.

Test Examples 1 to 7 and Comparative Test Examples 1 to 3: Evaluation of Characteristics of Etchant Composition Containing Sulfonic Acid

Test 1: Etching of Cu/ITO and Cu/IGZOx

After vacuum-depositing ITO or IGZO _X on a glass substrate (100 mm × 100 mm), and vacuum-depositing the copper film on the above ITO or IGZO _X , a photoresist having a predetermined pattern is formed on the substrate by photolithography . Subsequently, etching techniques were performed on the Cu/ITO bilayer film or the Cu/IGZO _X double layer film using the etching liquid compositions of Examples 1 to 7 and Comparative Examples 1 to 3, respectively.

An experimental apparatus (model name: ETCHER (TFT), SEMES) of the jet etching method was used, and when the etching technique was performed, the temperature of the etching liquid composition was set to about 30 °C. The etching time is about 100 seconds. The cross section of the copper-based metal film to be etched in the above etching technique was examined using a cross-sectional SEM (Hitachi product, model name S-4700), and the results are shown in Table 4 below.

(Note) ○: Good, △: General, X: Poor

Referring to Table 4, the etching liquid compositions of Examples 1 to 7 all exhibited good etching characteristics. Also, there is almost no erosion of the ITO film.

Therefore, it is understood that the etching liquid composition of the present invention is very suitable for etching of a copper-based metal film, a metal oxide film, and is very suitable for batch etching thereof.

Meanwhile, in the case of the etching liquid composition of Comparative Example 1 having no sulfonic acid, it was confirmed that the copper film could not be etched. Further, in the case of the etching liquid composition of Comparative Example 2 in which the content of the sulfonic acid indicated in the present invention is 0.3% by weight or less of 0.5% by weight, the oxidation resistance due to ITO is large, so that the etching rate is high. Significantly slower, resulting in a poor profile and residue. However, the phenomenon of attack on the ITO film did not occur. Further, in the case of the etching liquid composition of Comparative Example 3 which corresponds to 7.0% by weight of the sulfonic acid in the present invention, which is more than 5.0% by weight, although no residue and erosion of the ITO film occurred, Due to the rapid etching rate and the PR (resistance) lift-up phenomenon, pattern out phenomenon occurs, and it is known that it is not suitable as an etching liquid composition.

In addition, FIG. 1 is a view showing etching using the etching liquid composition of Example 4. Photograph of the etched profile of the Cu/ITO bilayer film.

Referring to Fig. 1, a Cu/ITO bilayer film etched using the etching liquid composition of Example 4 exhibited a good tapered cross section and excellent flatness.

Test Examples 8 to 14 and Comparative Test Examples 4 to 6: Evaluation of Characteristics of Etching Solution Composition Containing Organic Peracid

Test 1: Etching of Cu/ITO and Cu/IGZOx

After vacuum-depositing ITO or IGZO _X on a glass substrate (100 mm × 100 mm), and vacuum-depositing the copper film on the above ITO or IGZO _X , a photoresist having a predetermined pattern is formed on the substrate by photolithography . Subsequently, etching techniques were performed on the Cu/ITO bilayer film or the Cu/IGZO _X double layer film using the etching liquid compositions of Examples 8 to 14 and Comparative Examples 4 to 6, respectively.

An experimental apparatus (model name: ETCHER (TFT), SEMES) of the jet etching method was used, and when the etching technique was performed, the temperature of the etching liquid composition was set to about 30 °C. The etching time is about 100 seconds. The cross section of the copper-based metal film to be etched in the above etching technique was examined using a cross-sectional SEM (Hitachi product, model name S-4700), and the results are shown in Table 5 below.

(○: Good, △: Normal, X: Poor)

As shown in the above Table 5, the etching liquids of Examples 8 to 14 did not erode the lower ITO film and the IGZOx film of the copper layer. Further, as shown in FIG. 2, in the case of the copper-based metal film etched by the etching liquid composition of Example 11, an excellent etching profile and flatness were exhibited, and no etching residue was left. Meanwhile, in the case of the etching liquid of Comparative Example 4 which did not have peracetic acid, Cu was not etched (Unetch) and etching could not be performed. Further, as shown in Comparative Examples 5 and 6, in the case where the content of the organic peroxyacid was too low (peracetic acid, 0.5% by weight) or too high (peracetic acid, 7.0% by weight), the etching property was not Well, there is no way to ensure the possibility of using the etchant.

Test Examples 15 to 21 and Comparative Test Examples 7 to 9: Evaluation of Characteristics of Etchant Composition Containing Phosphonic Acid Derivatives

Test 1: Etching of Cu/ITO and Cu/IGZOx

After vacuum-depositing ITO or IGZO _X on a glass substrate (100 mm × 100 mm), and vacuum-depositing the copper film on the above ITO or IGZO _X , a photoresist having a predetermined pattern is formed on the substrate by photolithography . Subsequently, etching techniques were performed on the Cu/ITO bilayer film or the Cu/IGZO _X double layer film using the etching liquid compositions of Examples 15 to 21 and Comparative Examples 7 to 9, respectively.

An experimental apparatus (model name: ETCHER (TFT), SEMES) of the jet etching method was used, and when the etching technique was performed, the temperature of the etching liquid composition was set to about 30 °C. The etching time is about 100 seconds. The cross section of the copper-based metal film to be etched in the above etching technique was examined using a cross-sectional SEM (Hitachi product, model name S-4700), and the results are shown in Table 6 below.

Further, in the presence of metal ions (especially copper ions), in order to evaluate the degree of superheat of the hydrogen peroxide-based chain decomposition reaction, the etching liquids corresponding to the above-described Example 15 to Example 21 and Comparative Example 7 to Comparative Example 9 were used. After 3,000 ppm of equivalent Cu powder was dissolved in the composition, the mixture was allowed to stand for 24 hours, and the temperature was measured. The results are shown in Table 6 below. At this time, the maximum temperature described in the following Table 6 indicates the highest value among the temperature changes of the etching liquid composition based on the hydrogen peroxide chain decomposition reaction when Cu is eluted at 3000 ppm.

As shown in the above Table 6, the etching liquid compositions of Examples 15 to 21 all exhibited good etching characteristics and did not erode the lower metal oxide film of the copper layer. Further, as shown in FIG. 3, in the case where the copper-based metal film was etched by the etching liquid composition of Example 18, a good tapered cross section was exhibited, the etching straightness was excellent, and there was no etching residue and metal oxide. Film erosion phenomenon.

And, as shown in Table 6 above, the etches of Examples 15 to 21 When the engraved composition was eluted at 3000 ppm of Cu, the temperature was only raised to a maximum of 34.2 ° C, and the overheat stability characteristics were greatly improved. Meanwhile, in the case of the etching liquid of Comparative Example 7 containing no 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), Cu was not etched (Unetch), and Cu powder was not melted. Therefore, it can be confirmed that HEDP is an essential element in copper film etching. Further, when the copper-based metal film was etched by the etching liquid composition of Comparative Example 8, although a good tapered cross section was exhibited, when Cu was eluted at 3000 ppm, overheat stability could not be ensured. Further, when the copper-based metal film was etched by the etching liquid composition of Comparative Example 9, the etching property was not good due to an excessive etching rate (Etch Rate), but it was confirmed that the overheat stability was secured.

Test 2: Evaluation of the number of sheets processed by the etching solution based on Cu concentration

The Cu powder was sequentially eluted in the etching liquid composition of Example 17 of the present invention to achieve the Cu concentration (0 to 7000 ppm) described in Table 7, and the etching characteristics and stability evaluation of the etching liquid composition were performed.

Thereby, the temperature change based on the Cu concentration, the occurrence or absence of the residue, the etching profile, the etching straightness, and the presence/absence of the metal oxide film erosion were evaluated, and the results are shown in Table 7. in. The maximum temperature in Table 7 below indicates the highest value among the temperature changes of the etching liquid based on the hydrogen peroxide chain decomposition reaction as the Cu concentration increases. In the evaluation, in the case where the conditions for ensuring the superheat stability, the residue were not generated, and the etching profile was good, it was defined that the etching liquid composition can be continuously used in the etching technique and the experiment was carried out.

As shown in the above Table 7, the etching liquid composition of Example 17 did not undergo superheating when Cu was eluted at 7000 ppm, and no residue and metal oxide film erosion occurred, and the profile and flatness were observed. Aspects show good characteristics. Therefore, it was confirmed that the etching liquid composition of Example 17 can be used up to 7000 ppm of Cu elution.

1 is a photograph showing an etched cross section of a Cu/ITO bilayer film etched by the etching liquid composition of Example 4.

2 is a photograph showing an etched cross section of a Cu/ITO bilayer film etched by the etching liquid composition of Example 11.

3 is a photograph showing an etched cross section of a Cu/ITO bilayer film etched by the etching liquid composition of Example 18. FIG.

Claims (16)

A wiring forming method is a wiring forming method of a copper-based metal film, comprising the steps of: I) forming a metal oxide film on a substrate; and II) forming a copper-based metal film on the metal oxide film; III) selectively leaving a photoreactive substance on the copper-based metal film; and IV) etching only the upper portion of the copper-based metal film using an etchant composition, characterized in that, relative to the etchant composition The etchant composition comprises A) 5 to 25 wt% of hydrogen peroxide (H ₂ O ₂ ), B) 0.1 to 5 wt% of the azole compound, and C) residual water, and the etchant composition is further Contains additives. The wiring forming method according to claim 1, wherein the metal oxide film is a film composed of a ternary or quaternary oxide represented by the following formula 1, and [Formula 1] AxByCzO is in Formula 1, A , B and C are each independently Zn, Cd, Ga, In, Sn, Hf, Zr or Ta, and x, y and z are each independently a rational number greater than or equal to zero. The wiring forming method according to claim 1, wherein the additive is 0.5 to 5.0% by weight of a sulfonic acid. The wiring forming method according to claim 1, wherein the additive is 1 to 5 wt% of an organic peracid. The wiring forming method according to claim 1, wherein the additive is 3 to 15% by weight of a phosphonic acid derivative and a salt thereof. The wiring forming method according to claim 1, wherein the copper-based metal film is a group consisting of pure copper, copper nitride, and copper oxide. One selected from the group consisting of one selected from the group consisting of pure copper, copper nitride, and copper oxide, and from aluminum (Al), magnesium (Mg), calcium (Ca), and titanium (Ti). , silver (Ag), chromium (Cr), manganese (Mn), iron (Fe), zirconium (Zr), niobium (Nb), molybdenum (Mo), palladium (Pd), hafnium (Hf), tantalum (Ta) An alloy of one or more metals selected from the group consisting of tungsten (W). An etchant composition for a copper-based metal film based on the total weight of the etchant composition, the etchant composition comprising: A) 5.0 to 25.0% by weight of hydrogen peroxide (H ₂ O ₂ ); ) 0.1 to 5.0 wt% of the azole compound; and C) the remaining water, the etchant composition further comprising an additive. The etchant composition for a copper-based metal film according to claim 7, wherein B) the azole compound is derived from aminotetrazole, benzotriazole, tolyltriazole (tolyltriazole), pyrazole, pyrrole, imidazole, 2-methylimidazole, 2-ethylimidazole, 2-propylimidazole, 2-aminoimidazole, 4-methylimidazole, 4-B One or more selected from the group consisting of pyrimidazole and 4-propylimidazole. The etchant composition for a copper-based metal film according to claim 7, wherein the additive is 0.5 to 5.0% by weight of a sulfonic acid. The etchant composition for a copper-based metal film according to claim 9, wherein the sulfonic acid is derived from Amidosulfonic acid, Methanesulfonic acid, and Ethanesulfonic acid (Ethanesulfonic acid). Acid), p-Toluenesulfonic acid, trifluoromethanesulfonic acid, Benzenesulfonic acid, sulfamic acid, and polystyrene sulfonic acid One or more of the selected groups. The etchant composition for a copper-based metal film according to claim 7, wherein the additive is 1 to 5 wt% of an organic peracid. The etchant composition for a copper-based metal film according to claim 11, wherein the organic peracid is one selected from the group consisting of Peracetic Acid and Perbenzoic acid. the above. The etchant composition for a copper-based metal film according to claim 7, wherein the additive is a 3 to 15% by weight phosphonic acid derivative and a salt thereof. The etchant composition for a copper-based metal film according to claim 13, wherein the phosphonic acid derivative and a salt thereof are derived from 2-aminoethylphosphonic acid (2-AEP), methylphosphine Dimethyl methacrylate (DMMP), 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), amine tris (methylene phosphonic acid) (ATMP), ethylenediamine tetra (methylene phosphonic acid) (EDTMP), tetramethylenediaminetetrakis (methylenephosphonic acid) (TDTMP), hexamethylenediaminetetrakis (methylenephosphonic acid) (HDTMP), diethylenetriamine penta (methylenephosphine) Acid) (DTPMP), phosphonic acid butane-tricarboxylic acid (PBTC), N-(phosphonomethyl)imidodiacetic acid (PMIDA), 2-carboxyethylphosphonic acid (CEPA), 2- One or a mixture of two or more selected from the group consisting of hydroxyphosphonium carboxylic acid (HPAA) and amino-tris-(methylene phosphonic acid) (AMP); and salts thereof. The etching liquid composition for a copper-based metal film according to claim 7, wherein the etching liquid composition further contains a surfactant. The etchant composition for a copper-based metal film according to claim 7, wherein the copper-based metal film is one selected from the group consisting of pure copper, copper nitride, and copper oxide; It is one selected from the group consisting of pure copper, copper nitride, and copper oxide, and is derived from aluminum (Al), magnesium (Mg), calcium (Ca), titanium (Ti), silver (Ag), Chromium (Cr), manganese (Mn), iron (Fe), zirconium (Zr), niobium (Nb), molybdenum (Mo), palladium (Pd), hafnium (Hf), An alloy of one or more metals selected from the group consisting of tantalum (Ta) and tungsten (W).