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TW201304115A - Light-emitting diode package structure manufacturing method - Google Patents

Light-emitting diode package structure manufacturing method Download PDF

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Publication number
TW201304115A
TW201304115A TW101130139A TW101130139A TW201304115A TW 201304115 A TW201304115 A TW 201304115A TW 101130139 A TW101130139 A TW 101130139A TW 101130139 A TW101130139 A TW 101130139A TW 201304115 A TW201304115 A TW 201304115A
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TW
Taiwan
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phosphor
emitting diode
light
substrate
light emitting
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TW101130139A
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Chinese (zh)
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林弘毅
黃冠瑞
孔妍庭
田淑芬
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探微科技股份有限公司
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Priority to TW101130139A priority Critical patent/TW201304115A/en
Publication of TW201304115A publication Critical patent/TW201304115A/en

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    • H10W70/093
    • H10W70/099
    • H10W70/682
    • H10W72/073
    • H10W72/241
    • H10W72/874
    • H10W72/9413
    • H10W90/00
    • H10W90/734
    • H10W90/756

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Abstract

本發明之發光二極體封裝結構可使用感光材料形成螢光膠體或螢光層,因此可利用半導體製程進行螢光膠體或螢光層的批次製造。另外,由於本發明可利用曝光暨顯影製程形成之光線穿孔或雷射列印製程,精確且簡便地調整螢光粉之分布密度,因此可以準確地調整發光二極體封裝結構的光學效果。The light-emitting diode package structure of the present invention can form a phosphor colloid or a phosphor layer using a photosensitive material, so that a batch process of a phosphor colloid or a phosphor layer can be performed by a semiconductor process. In addition, since the present invention can accurately and easily adjust the distribution density of the phosphor powder by using the light perforation or laser printing process formed by the exposure and development process, the optical effect of the LED package structure can be accurately adjusted.

Description

發光二極體封裝結構之製作方法 Light-emitting diode package structure manufacturing method

本發明係關於一種發光二極體封裝結構及其製作方法,尤指一種利用半導體基板作為封裝基板(package substrate),且可調整螢光膠體或螢光層之螢光粉分布密度的發光二極體封裝結構,以及其製作方法。 The present invention relates to a light emitting diode package structure and a manufacturing method thereof, and more particularly to a light emitting diode which utilizes a semiconductor substrate as a package substrate and can adjust the distribution density of the phosphor powder of the phosphor colloid or the phosphor layer. Body package structure, and its manufacturing method.

請參考第1圖,其繪示的是習知形成發光二極體晶片封裝結構的點膠(glue dispensing)製程示意圖。如第1圖所示,習知發光二極體晶片封裝結構1包括一利用射出成型製作出的基座(base)2,並將導線架3固定於基座2上而形成一封裝基板4,發光二極體晶片5則固晶於導線架3上。其中,發光二極體晶片5之一電極係直接與位於封裝基板4一側之導線架3電性連接,而另一電極則以打線方式(wire bonding)透過銲線7電性連接至封裝基板4另一側之導線架3。接著進行一道點膠製程,利用一點膠設備8把封裝膠材6封合於封裝基板4上。 Please refer to FIG. 1 , which is a schematic diagram of a glue dispensing process for forming a light emitting diode package structure. As shown in FIG. 1 , the conventional LED package structure 1 includes a base 2 formed by injection molding, and the lead frame 3 is fixed on the base 2 to form a package substrate 4 . The light-emitting diode wafer 5 is then crystallized on the lead frame 3. The one electrode of the LED chip 5 is directly electrically connected to the lead frame 3 on the side of the package substrate 4, and the other electrode is electrically connected to the package substrate through the bonding wire 7 by wire bonding. 4 lead frame 3 on the other side. Then, a dispensing process is performed, and the encapsulant 6 is sealed on the package substrate 4 by using a glue device 8.

然而習知形成發光二極體晶片封裝結構的方法可能會具有膠量不均勻、出膠不穩定、封膠表面平坦度控制不易、製程效率低等缺點。尤其是效率方面,由於習知點膠製程通常一次僅能處理一個發光二極體晶片封裝結構,因此習知方法必須耗費大量的時間方能完成為數眾多的發光二極體晶片封裝結構。 However, the conventional method for forming a light-emitting diode chip package structure may have disadvantages such as uneven glue amount, unstable glue discharge, difficulty in controlling flatness of the seal surface, and low process efficiency. Especially in terms of efficiency, since the conventional dispensing process can only process one LED package structure at a time, the conventional method must take a large amount of time to complete a large number of LED package structures.

本發明之目的之一在於提供一種發光二極體封裝結構及其製作方法,以克服上述習知方法所引起之問題。 One of the objects of the present invention is to provide a light emitting diode package structure and a method of fabricating the same to overcome the problems caused by the above conventional methods.

為達上述目的,本發明提供一種製作發光二極體封裝結構之方法,其包含有:提供一基板與複數個發光二極體晶片,並使該等發光二極體晶片分別固晶於該基板上;於該基板與該等發光二極體晶片上形成一螢光層;以及圖案化該螢光層,使該螢光層成為複數個螢光膠體,該等螢光膠體設置於該等發光二極體晶片上方,使各該螢光膠體具有複數個光線穿孔,且各該光線穿孔垂直貫穿各該螢光膠體。 In order to achieve the above object, the present invention provides a method for fabricating a light emitting diode package structure, comprising: providing a substrate and a plurality of light emitting diode chips, and respectively fixing the light emitting diode chips to the substrate Forming a phosphor layer on the substrate and the LED chips; and patterning the phosphor layer to form the phosphor layer into a plurality of phosphor colloids, wherein the phosphor colloids are disposed on the phosphors Above the diode wafer, each of the phosphor colloids has a plurality of light perforations, and each of the light perforations vertically penetrates each of the phosphor colloids.

為達上述目的,本發明另提供一種發光二極體封裝結構,其包含有:一基板;至少一發光二極體晶片,固定於該基板上;以及至少一螢光膠體,設置於該基板與該等發光二極體晶片上,該螢光膠體具有複數個光線穿孔,且各該光線穿孔垂直貫穿各該螢光膠體。 In order to achieve the above object, the present invention further provides a light emitting diode package structure comprising: a substrate; at least one light emitting diode chip fixed on the substrate; and at least one phosphor colloid disposed on the substrate On the LED body, the phosphor colloid has a plurality of light perforations, and each of the light perforations vertically penetrates each of the phosphor colloids.

於本發明之發光二極體封裝結構可使用感光材料形成螢光膠體,因此可利用半導體製程進行螢光膠體的批次製造與圖案化步驟。又由於本發明之螢光膠體具有複數個光線穿孔,因此可有效 地調整螢光膠體或螢光層之螢光粉分布密度,以提升發光二極體封裝結構的光學效果。 In the light emitting diode package structure of the present invention, a fluorescent material can be formed using a photosensitive material, so that a batch manufacturing and patterning step of the fluorescent colloid can be performed by a semiconductor process. Moreover, since the phosphor colloid of the present invention has a plurality of light perforations, it is effective The phosphor powder distribution density of the phosphor colloid or the phosphor layer is adjusted to improve the optical effect of the LED package structure.

為使熟習本發明所屬技術領域之一般技藝者能更進一步了解本發明,下文特列舉本發明之數個較佳實施例,並配合所附圖式,詳細說明本發明的構成內容及所欲達成之功效。 The present invention will be further understood by those skilled in the art to which the present invention pertains. The effect.

請參考第2圖至第6圖。第2圖至第6圖為本發明製作發光二極體封裝結構之方法一較佳實施例之示意圖,其中第2a圖至第6a圖為頂視示意圖,第2b圖至第6b圖為剖面示意圖,而第5c圖為整個基板30的頂視示意圖。如第2a圖與第2b圖所示,首先提供一基板30與複數個發光二極體晶片40。其中,基板30定義有複數個單元(unit)U,分別用以設置各發光二極體晶片40。基板30可為一半導體基板,例如較佳為矽基板、砷化鎵基板或其它具有優良導熱性、適合批次生產並相容於半導體製程之基板。於基板30之上表面可具有複數個凹陷之固晶區32。固晶區32之深度較佳可與後續固定於其內之發光二極體晶片的高度接近,且其深度係介於數微米至數十微米之間,例如較佳為介於10至50微米之間,但不以此為限。由於固晶區32的深度與發光二極體晶片40的高度接近,因此於固晶後基板30與發光二極體晶片40的上表面可約略位於同一平面。 Please refer to Figures 2 to 6. 2 to 6 are schematic views of a preferred embodiment of a method for fabricating a light emitting diode package structure, wherein FIGS. 2a to 6a are top views, and FIGS. 2b to 6b are schematic cross-sectional views. And FIG. 5c is a top view of the entire substrate 30. As shown in Figures 2a and 2b, a substrate 30 and a plurality of light emitting diode wafers 40 are first provided. The substrate 30 defines a plurality of units U for respectively setting the LEDs 40. The substrate 30 can be a semiconductor substrate, such as a germanium substrate, a gallium arsenide substrate, or other substrate having excellent thermal conductivity, suitable for batch production, and compatible with semiconductor processes. The upper surface of the substrate 30 may have a plurality of recessed solid crystal regions 32. The depth of the die-bonding region 32 is preferably close to the height of the light-emitting diode wafer subsequently fixed therein, and the depth thereof is between several micrometers and several tens of micrometers, for example, preferably between 10 and 50 micrometers. Between, but not limited to. Since the depth of the solid crystal region 32 is close to the height of the LED wafer 40, the substrate 30 and the upper surface of the LED wafer 40 can be approximately in the same plane.

本發明可採取任何適當之電性連接方式以利於發光二極體晶片對外進行電性連接,然而由於可採用之電連接方式眾多,因此其 詳細連接方式並未明確繪示於圖中。例如可利用打線方式透過銲線連接至基板30上的導線(圖未示)、利用覆晶方式透過銲接凸塊連接至基板30上的導線(圖未示)、使用導電膠材、共晶接合(eutectic bonding)或其它方式達成,而基板30之導線38經由可基板30之貫穿孔36連接至基板30之下表面,但不限於此。此外,本發明之發光二極體晶片40可以採用各種類型的發光二極體晶片,例如選用垂直型晶片或是水平型晶片。 The present invention can adopt any suitable electrical connection manner to facilitate external electrical connection of the LED chip. However, due to the numerous electrical connections that can be used, The detailed connection method is not clearly shown in the figure. For example, a wire (not shown) connected to the substrate 30 by a bonding wire, a wire connected to the substrate 30 through a solder bump by a flip chip (not shown), a conductive paste, and a eutectic bonding can be used. (eutectic bonding) or other means, and the wires 38 of the substrate 30 are connected to the lower surface of the substrate 30 via the through holes 36 of the substrate 30, but are not limited thereto. In addition, the LED array 40 of the present invention can employ various types of light-emitting diode wafers, for example, a vertical type wafer or a horizontal type wafer.

如第3a圖與第3b圖所示,接著可選擇性地於基板30與發光二極體晶片40上形成一透光之平坦結構50。平坦結構50具有介電特性並填入發光二極體晶片40之外側與固晶區32之間的空隙,使得基板30與發光二極體晶片40之上表面形成一完整的平坦面,如此一來有助於後續膜層的製作。平坦結構50中可另包含複數個接觸洞52,以供各發光二極體晶片40之可經由接觸洞52向外電連接,但不限於此。 As shown in FIGS. 3a and 3b, a light transmissive planar structure 50 is then selectively formed on the substrate 30 and the LED substrate 40. The flat structure 50 has a dielectric property and fills a gap between the outer side of the LED substrate 40 and the die bonding region 32, so that the substrate 30 and the upper surface of the LED substrate 40 form a complete flat surface, such that To help the subsequent film layer production. A plurality of contact holes 52 may be further included in the flat structure 50 for electrically connecting the light-emitting diode wafers 40 via the contact holes 52, but are not limited thereto.

如第4a圖與第4b圖所示,其後,另可選擇性地於平坦結構50上形成導線54,並將導線54填入接觸洞52,藉此進行電性連接。接著可利用一旋轉塗佈製程於基板30、發光二極體晶片40與平坦結構50上形成一螢光層64,螢光層50包含有一感光膠材46與螢光粉48混合於感光膠材46中,例如包含有摻入螢光粉48的感光材料。需注意的是,螢光粉48實際上是相當微小的微粒,為了清楚顯現出螢光層50的分布位置,因此螢光粉48並未顯示於頂視圖中。其中,感光膠材46可以包含感光樹酯(photosensitive resin)等照光後會形成鏈結或照光後會裂解的材質,且較佳是具有良好 透光性,而螢光粉可以包含乙鋁石榴石螢光粉(yttrium aluminum garnet,簡稱YAG)等可轉換光線波長的材質。 As shown in Figs. 4a and 4b, thereafter, the wires 54 are selectively formed on the flat structure 50, and the wires 54 are filled into the contact holes 52, thereby electrically connecting. Then, a fluorescent layer 64 is formed on the substrate 30, the LED substrate 40 and the flat structure 50 by a spin coating process. The phosphor layer 50 comprises a photosensitive adhesive 46 and a phosphor powder 48 mixed with the photosensitive adhesive. In 46, for example, a photosensitive material incorporating the fluorescent powder 48 is contained. It should be noted that the phosphor powder 48 is actually a relatively small particle, and the phosphor powder 48 is not shown in the top view in order to clearly show the distribution position of the phosphor layer 50. Wherein, the photosensitive adhesive 46 may comprise a photosensitive resin or the like which will form a chain after illuminating or cleave after illumination, and preferably has good properties. Translucent, and the phosphor powder may contain a material of a convertible light wavelength such as yttrium aluminum garnet (YAG).

如第5a圖與第5b圖所示,之後利用一曝光暨顯影製程圖案化前述螢光層64,使螢光層64成為複數個螢光膠體56,並且可同時使各螢光膠體56具有複數個光線穿孔57。各螢光膠體56係分別對應設置於各發光二極體晶片40上方。各光線穿孔57可均勻分布於各螢光膠體56中,且可垂直貫穿各螢光膠體56,以暴露螢光膠體56下方之平坦結構50或發光二極體晶片40的部分表面。由於光線穿孔57的部分不具螢光粉48,因此光線穿孔57的存在可以降低該區域的螢光粉48數量,藉以改變發光二極體封裝結構所呈現的色溫。其中各螢光膠體56之光線穿孔57所佔的面積可根據各發光二極體晶片40的亮度與產品需求等設計而調整,較佳係佔各螢光膠體56的面積的5%至30%。 As shown in FIGS. 5a and 5b, the phosphor layer 64 is patterned by an exposure and development process to form the phosphor layer 64 into a plurality of phosphor colloids 56, and each of the phosphor colloids 56 can have a plurality of phosphor colloids 56 at the same time. Light perforations 57. Each of the phosphor colloids 56 is disposed correspondingly above each of the light-emitting diode wafers 40. Each of the light ray perforations 57 can be evenly distributed in each of the phosphor colloids 56 and can vertically penetrate the respective phosphor colloids 56 to expose the flat structure 50 under the phosphor colloid 56 or a portion of the surface of the light emitting diode wafer 40. Since the portion of the light perforation 57 does not have the phosphor powder 48, the presence of the light perforation 57 can reduce the amount of phosphor powder 48 in the region, thereby changing the color temperature exhibited by the LED package structure. The area occupied by the light perforations 57 of each of the phosphor colloids 56 can be adjusted according to the brightness and product requirements of each of the LED chips 40, preferably 5% to 30% of the area of each of the phosphor colloids 56. .

螢光膠體56的作用在於使發光二極體晶片40產生的部分光線轉換成另一顏色之光線,例如本實施例之發光二極體晶片40可為藍光發光二極體晶片,因此螢光膠體56可使用能產生黃光之螢光材質(yellow phosphor),進而藉由藍光與黃光混光而產生白光。或者,利用紫外光發光二極體晶片來激發藍光、綠光及紅光螢光粉。需注意的是,螢光膠體56之材料與形成方式並不以本實施例為限。 The function of the phosphor colloid 56 is to convert part of the light generated by the LED chip 40 into light of another color. For example, the LED chip 40 of the embodiment may be a blue light emitting diode chip, and thus the phosphor colloid 56 can use a yellow phosphor that produces yellow light, and then white light is obtained by mixing blue light with yellow light. Alternatively, an ultraviolet light emitting diode chip is used to excite blue, green, and red phosphors. It should be noted that the material and formation manner of the phosphor colloid 56 are not limited to the embodiment.

需注意的是,各螢光膠體56之光線穿孔57的形狀、尺寸、所佔的總面積、分布的密度與位置,皆可根據螢光粉48的分布密度與產品需求而調整。以藍光發光二極體之封裝結構為例,對於一利用旋轉塗佈製程所形成之螢光層64而言,當螢光膠體56不具 光線穿孔57時,位於基板30之中央區域的黃光螢光粉48密度通常會比位於基板30之邊緣區域的黃光螢光粉48密度來得高,因此位於基板30之中央區域的發光二極體封裝結構所呈現的黃光色調可能會比位於基板30之邊緣區域的發光二極體封裝結構所呈現的黃光色調更強,導致同一批生產的發光二極體封裝結構卻發出不同程度的色溫。因此,本發明可以於形成螢光層64之後,量測任一基板30上所呈現出的色溫或亮度,接著比對量測結果與所需呈現的產品規格之間的異同,再利用比對的結果來設計光線穿孔57的佈局,利用光線穿孔57的設置來進行調節。如第5c圖所示,例如使得基板30之中央區域的光線穿孔57開口比例可以較基板30之邊緣區域的光線穿孔57開口比例來得高。或者,當基板30、發光二極體晶片40與/或平坦結構50所構成之表面具有凹陷處時,凹陷處的螢光粉48密度通常會比平坦處或是突起處更高,因此本發明可於凹陷處設置較高開口比例的光線穿孔57,以做為平衡。 It should be noted that the shape, size, total area occupied, density and position of the light perforations 57 of each phosphor colloid 56 can be adjusted according to the distribution density of the phosphor powder 48 and the product requirements. Taking the package structure of the blue light emitting diode as an example, for the phosphor layer 64 formed by the spin coating process, when the phosphor colloid 56 does not have When the light is perforated 57, the density of the yellow fluorescent powder 48 located in the central portion of the substrate 30 is generally higher than the density of the yellow fluorescent powder 48 located in the edge region of the substrate 30, so that the light emitting diode package structure is located in the central portion of the substrate 30. The yellow hue of the present invention may be stronger than the yellow hue of the LED package structure located in the edge region of the substrate 30, resulting in different degrees of color temperature for the same batch of LED packages. Therefore, the present invention can measure the color temperature or brightness exhibited on any of the substrates 30 after forming the phosphor layer 64, and then compare the measurement results with the product specifications required to be presented, and then use the comparison. The result is to design the layout of the light perforations 57, using the settings of the light perforations 57 to make adjustments. As shown in FIG. 5c, for example, the ratio of the opening of the light perforation 57 in the central portion of the substrate 30 can be made higher than the ratio of the opening of the light perforation 57 in the edge region of the substrate 30. Alternatively, when the surface of the substrate 30, the light-emitting diode wafer 40 and/or the flat structure 50 has a recess, the density of the phosphor powder 48 in the recess is generally higher than that at the flat portion or the protrusion, and thus the present invention A light opening 75 having a higher opening ratio can be provided in the depression to balance.

另外,本發明可於平坦結構50上形成複數個封閉環型圖案58,分別環繞各固晶區32。封閉環型圖案58具有一定的高度,例如數微米,其作用在於維持後續形成之膠體的表面張力,使其保持半球體狀進而發揮光學透鏡的作用。在本實施例中,封閉環型圖案58與螢光膠體56可使用相同的感光性材料,並藉由同一道曝光暨顯影製程加以形成藉以簡化製程,但本發明之方法並不以此為限。 In addition, the present invention can form a plurality of closed loop patterns 58 on the flat structure 50 to surround the respective die attach regions 32. The closed loop pattern 58 has a height, such as a few microns, which serves to maintain the surface tension of the subsequently formed colloid, maintaining it in a hemispherical shape and functioning as an optical lens. In this embodiment, the closed loop pattern 58 and the phosphor colloid 56 can use the same photosensitive material and are formed by the same exposure and development process to simplify the process, but the method of the present invention is not limited thereto. .

如第6a圖與第6b圖所示,接著進行一點膠製程,於各單元U之螢光膠體56上分別形成一膠體62,且膠體62藉由封閉環型圖 案58的存在而可維持其表面張力,形成半球體形狀。膠體62在固化後會形成一光學透鏡(lens),最後再利用切割製程即可製作出複數個發光二極體封裝結構。 As shown in Figures 6a and 6b, a glue process is then performed to form a colloid 62 on the phosphor colloid 56 of each unit U, and the colloid 62 is closed by a ring pattern. Case 58 is present to maintain its surface tension to form a hemispherical shape. The colloid 62 forms an optical lens after curing, and finally a plurality of light emitting diode packages can be fabricated by using a cutting process.

於前述實施例中,螢光層64係旋轉塗佈於平坦結構50之表面上,由於平坦結構50的平坦特性使得感光膠材46與螢光粉48可以順利地利用旋轉塗佈製程形成均勻的螢光層64。於其他實施例中,本發明亦可不包含平坦結構50,而由其它方式使感光膠材46與螢光粉48可以旋塗於平坦之表面。請參考第7圖與第8圖。第7圖與第8圖為本發明另一較佳實施例製作發光二極體封裝結構之方法示意圖,其中第7圖為頂視示意圖,第8圖為剖面示意圖。如第7圖與第8圖所示,使發光二極體晶片66安置於固晶區32後,發光二極體晶片66頂面與基板30頂面高度約略相同,再利用旋轉塗佈製程與圖案化製程而形成具有光線穿孔57之螢光膠體56。其中,發光二極體晶片66可採用各種方式形成對外電連接之途徑,且發光二極體封裝結構可另包含其他可增進產品可靠度或光學效益之元件或膜層,然而其詳細電連接狀況、其他元件或膜層在此省略而未繪示於圖中。 In the foregoing embodiment, the phosphor layer 64 is spin-coated on the surface of the flat structure 50. Due to the flat nature of the flat structure 50, the photosensitive paste 46 and the phosphor powder 48 can be smoothly formed by the spin coating process. Fluorescent layer 64. In other embodiments, the present invention may also not include the flat structure 50, but the photosensitive adhesive 46 and the phosphor powder 48 may be spin-coated on a flat surface by other means. Please refer to Figure 7 and Figure 8. FIG. 7 and FIG. 8 are schematic diagrams showing a method for fabricating a light-emitting diode package structure according to another preferred embodiment of the present invention, wherein FIG. 7 is a top view and FIG. 8 is a cross-sectional view. As shown in FIGS. 7 and 8, after the LED substrate 66 is placed in the die bonding region 32, the top surface of the LED substrate 66 is approximately the same as the top surface of the substrate 30, and the spin coating process is utilized. The patterning process forms a phosphor colloid 56 having light perforations 57. Wherein, the LED array 66 can be formed into an external electrical connection by various means, and the LED package structure can further comprise other components or layers that can improve product reliability or optical efficiency, but the detailed electrical connection status thereof. Other elements or layers are omitted here and are not shown in the drawings.

由於本發明之發光二極體封裝結構可使用感光材料形成螢光膠體,因此可利用半導體製程進行螢光膠體的批次製造與圖案化步驟,大幅縮短發光二極體封裝結構之製程時間,使得製程效率大增。又由於本發明可利用螢光膠體之圖案化步驟一併形成光線穿孔,因此可精確且簡便地調整螢光膠體之螢光粉分布密度,以提升發光二極體封裝結構的光學效果,得以控制所生產的發光二極 體封裝結構可以發出相同或相近色溫,或者也可特別針對同一批次生產的發光二極體封裝結構而調整出不同程度的色溫。 Since the light emitting diode package structure of the present invention can form a fluorescent colloid using a photosensitive material, the batch manufacturing and patterning step of the fluorescent colloid can be performed by using a semiconductor process, thereby greatly shortening the processing time of the light emitting diode package structure, thereby making Process efficiency has increased significantly. Moreover, since the present invention can utilize the patterning step of the phosphor colloid to form the light perforation, the phosphor powder distribution density of the phosphor colloid can be precisely and simply adjusted to improve the optical effect of the LED package structure and can be controlled. Illuminated dipole The body package structure can emit the same or similar color temperature, or can adjust different color temperatures especially for the LED package structure produced in the same batch.

除了可利用旋轉塗佈製程與圖案化製程來批次製造均勻的螢光層之外,本發明亦可利用雷射列印的方式而批次製造出均勻的螢光層。請參考第9圖至第11圖。第9圖至第11圖為本發明又一較佳實施例製作發光二極體封裝結構之方法之示意圖,其中第9a圖至第11a圖為螢光薄膜之頂視示意圖,而第9b圖至第11b圖為螢光薄膜之剖面示意圖。如9a圖與第9b圖所示,首先提供一基板30與複數個發光二極體晶片40。其中,基板30定義有複數個單元U,分別用以設置各發光二極體晶片40。於基板30之上表面可具有複數個凹陷之固晶區32。固晶區32之深度較佳可與後續固定於其內之發光二極體晶片的高度接近,但不限於此。於基板30與發光二極體晶片40上可選擇性地包含一透光之平坦結構50。平坦結構50具有介電特性並填入發光二極體晶片40之外側與固晶區32之間的空隙,使得基板30與發光二極體晶片40之上表面形成一完整的平坦面。其後,另可選擇性地於平坦結構50上形成導線54,並將導線54填入接觸洞52,藉此進行電性連接。 In addition to the use of a spin coating process and a patterning process to batch produce a uniform phosphor layer, the present invention can also utilize a laser printing method to batch produce a uniform phosphor layer. Please refer to Figure 9 to Figure 11. 9 to 11 are schematic views showing a method of fabricating a light emitting diode package structure according to still another preferred embodiment of the present invention, wherein FIGS. 9a to 11a are top views of the phosphor film, and FIG. 9b is a view Figure 11b is a schematic cross-sectional view of a fluorescent film. As shown in FIG. 9a and FIG. 9b, a substrate 30 and a plurality of light emitting diode wafers 40 are first provided. The substrate 30 defines a plurality of cells U for respectively arranging the LEDs 40. The upper surface of the substrate 30 may have a plurality of recessed solid crystal regions 32. The depth of the solid crystal region 32 is preferably close to the height of the light-emitting diode wafer subsequently fixed therein, but is not limited thereto. A light transmissive flat structure 50 is selectively included on the substrate 30 and the LED array 40. The planar structure 50 has dielectric properties and fills a gap between the outer side of the LED substrate 40 and the die bonding region 32 such that the substrate 30 forms a complete flat surface with the upper surface of the LED substrate 40. Thereafter, a wire 54 is selectively formed on the flat structure 50, and the wire 54 is filled into the contact hole 52, thereby electrically connecting.

如10a圖與第10b圖所示,接著利用至少一雷射列印製程形成一螢光薄膜70,其中螢光薄膜70包含有螢光粉72。舉例來說,螢光薄膜70的形成方式可先利用主充電轉軸把靜電投射至感光鼓或感光帶上,再根據所需形成的預定圖案而以靜電吸附螢光粉72,接著把呈現出預定圖案的螢光粉72轉印至一感光乾膜74上,以形成所需之螢光薄膜70。 As shown in FIG. 10a and FIG. 10b, a phosphor film 70 is formed by at least one laser printing process, wherein the phosphor film 70 contains the phosphor powder 72. For example, the fluorescent film 70 can be formed by firstly using the main charging shaft to project static electricity onto the photosensitive drum or the photosensitive belt, and then electrostatically adsorbing the fluorescent powder 72 according to a predetermined pattern to be formed, and then presenting the predetermined color. The patterned phosphor powder 72 is transferred onto a photosensitive dry film 74 to form the desired phosphor film 70.

由於雷射列印的特性,以剖視觀之,單一螢光薄膜70之螢光粉72係單層排列而並未垂直堆疊;以俯視觀之,雷射列印製程的解析度可以達到50微米左右,甚至更小,因此可以控制螢光粉72的分佈排列而形成任何預定之圖案,而不受第10b圖所侷限,進而也可以控制任意區域的螢光粉72密度。舉例來說,螢光粉72可以平均分布整個螢光薄膜70上,或是僅對應於基板30之固晶區32上。而於其它實施例中,就單一發光二極體封裝結構而言,發光二極體晶片40正上方的發光強度通常會較發光二極體晶片40周圍的發光強度更大,因此螢光薄膜70對應於發光二極體晶片40正上方的螢光粉72密度可以較大,而對應於發光二極體晶片40周圍的螢光粉72密度可以略小。 Due to the characteristics of the laser printing, the fluorescent powder 72 of the single fluorescent film 70 is arranged in a single layer without vertical stacking in a cross-sectional view; the resolution of the laser printing process can reach 50 in a plan view. It is about micrometers or even smaller, so that the distribution of the phosphor powder 72 can be controlled to form any predetermined pattern without being limited by Fig. 10b, and the density of the phosphor powder 72 in any region can be controlled. For example, the phosphor powder 72 may be evenly distributed over the entire phosphor film 70 or only on the die attach region 32 of the substrate 30. In other embodiments, in the case of a single light-emitting diode package structure, the light-emitting intensity directly above the light-emitting diode wafer 40 is generally greater than that around the light-emitting diode wafer 40, and thus the phosphor film 70 is The density of the phosphor powder 72 corresponding to directly above the light-emitting diode wafer 40 can be large, and the density of the phosphor powder 72 corresponding to the periphery of the light-emitting diode wafer 40 can be slightly smaller.

如11a圖與第11b圖所示,其後利用一熱壓製程把螢光薄膜70之螢光粉72轉印至發光二極體晶片40上而形成一螢光層76。據此,單一螢光層76之螢光粉72也會呈單層排列而並未垂直堆疊,而發光二極體晶片40上任意區域的螢光粉72密度也可獲得精確的控制。 As shown in Fig. 11a and Fig. 11b, the phosphor powder 72 of the phosphor film 70 is transferred onto the LED wafer 40 by a thermal pressing process to form a phosphor layer 76. Accordingly, the phosphors 72 of the single phosphor layer 76 are also arranged in a single layer without being vertically stacked, and the density of the phosphor powder 72 in any region on the LED array 40 can be accurately controlled.

於本發明之其他實施例中,前述雷射列印製程與前述轉印步驟可反覆進行,以於發光二極體晶片40上形成複數層螢光層76。雷射列印製程有助於精確配置相鄰或重疊位置上的微小螢光粉72配置,透過極微細的圖樣和密度排列來組合運用,即可創造出肉眼看起來相當均一的色溫。 In other embodiments of the present invention, the laser printing process and the transfer step may be performed in reverse to form a plurality of phosphor layers 76 on the LED wafer 40. The laser printing process helps to precisely configure the configuration of the tiny phosphors 72 in adjacent or overlapping locations, and combines them with extremely fine patterns and density arrangements to create a color temperature that is fairly uniform to the naked eye.

綜上所述,由於本發明之發光二極體封裝結構可使用感光材料形成螢光膠體或螢光層,因此可利用半導體製程進行螢光膠體或 螢光層的批次製造,有效提升發光二極體封裝結構之製程效率。另外,由於本發明可利用曝光暨顯影製程或雷射列印製程精確且簡便地調整螢光膠體或螢光層之螢光粉分布密度,因此可以準確地調整發光二極體封裝結構的光學效果。 In summary, since the light emitting diode package structure of the present invention can form a phosphor colloid or a fluorescent layer using a photosensitive material, the semiconductor process can be used for the fluorescent colloid or The batch manufacturing of the phosphor layer effectively improves the process efficiency of the LED package structure. In addition, since the present invention can accurately and easily adjust the phosphor powder distribution density of the phosphor colloid or the phosphor layer by using the exposure and development process or the laser printing process, the optical effect of the LED package structure can be accurately adjusted. .

以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

1‧‧‧發光二極體晶片封裝結構 1‧‧‧Light emitting diode chip package structure

2‧‧‧基座 2‧‧‧Base

3‧‧‧導線架 3‧‧‧ lead frame

4‧‧‧封裝基板 4‧‧‧Package substrate

5‧‧‧發光二極體晶片 5‧‧‧Light Emitter Wafer

6‧‧‧封裝膠材 6‧‧‧Package

7‧‧‧銲線 7‧‧‧welding line

8‧‧‧點膠設備 8‧‧‧ Dispensing equipment

30‧‧‧基板 30‧‧‧Substrate

32‧‧‧固晶區 32‧‧‧ Gujing District

36‧‧‧貫穿孔 36‧‧‧through holes

38‧‧‧導線 38‧‧‧Wire

40‧‧‧發光二極體晶片 40‧‧‧Light Diode Wafer

46‧‧‧感光膠材 46‧‧‧Photosensitive adhesive

48‧‧‧螢光粉 48‧‧‧Fluorescent powder

50‧‧‧平坦結構 50‧‧‧flat structure

52‧‧‧接觸洞 52‧‧‧Contact hole

54‧‧‧導線 54‧‧‧Wire

56‧‧‧螢光膠體 56‧‧‧Fluorescent colloid

57‧‧‧光線穿孔 57‧‧‧Light perforation

58‧‧‧封閉環型圖案 58‧‧‧Closed ring pattern

62‧‧‧膠體 62‧‧‧colloid

64‧‧‧螢光層 64‧‧‧Fluorescent layer

66‧‧‧發光二極體晶片 66‧‧‧Light Emitting Diode Wafer

70‧‧‧螢光薄膜 70‧‧‧Fluorescent film

72‧‧‧螢光粉 72‧‧‧Fluorescent powder

74‧‧‧感光乾膜 74‧‧‧Photosensitive dry film

76‧‧‧螢光層 76‧‧‧Fluorescent layer

U‧‧‧單元 Unit U‧‧‧

第1圖繪示的是習知形成發光二極體晶片封裝結構的點膠製程示意圖。 FIG. 1 is a schematic view showing a dispensing process for forming a light emitting diode package structure.

第2圖至第6圖為本發明製作發光二極體封裝結構之方法一較佳實施例之示意圖。 2 to 6 are schematic views of a preferred embodiment of a method for fabricating a light emitting diode package structure according to the present invention.

第7圖與第8圖為本發明另一較佳實施例製作發光二極體封裝結構之方法示意圖。 7 and 8 are schematic views showing a method of fabricating a light emitting diode package structure according to another preferred embodiment of the present invention.

第9圖至第11圖為本發明又一較佳實施例製作發光二極體封裝結構之方法之示意圖。 9 to 11 are schematic views showing a method of fabricating a light emitting diode package structure according to still another preferred embodiment of the present invention.

30‧‧‧基板 30‧‧‧Substrate

36‧‧‧貫穿孔 36‧‧‧through holes

38‧‧‧導線 38‧‧‧Wire

40‧‧‧發光二極體晶片 40‧‧‧Light Diode Wafer

50‧‧‧平坦結構 50‧‧‧flat structure

52‧‧‧接觸洞 52‧‧‧Contact hole

54‧‧‧導線 54‧‧‧Wire

56‧‧‧螢光膠體 56‧‧‧Fluorescent colloid

57‧‧‧光線穿孔 57‧‧‧Light perforation

58‧‧‧封閉環型圖案 58‧‧‧Closed ring pattern

U‧‧‧單元 Unit U‧‧‧

Claims (12)

一種製作發光二極體封裝結構之方法,其包含有:提供一基板與複數個發光二極體晶片,並將該等發光二極體晶片分別固晶於該基板上;於該基板與該等發光二極體晶片上形成一螢光層;以及圖案化該螢光層,使該螢光層成為複數個螢光膠體分別位於該等發光二極體晶片上方,並使各該螢光膠體具有複數個光線穿孔,且各該光線穿孔垂直貫穿各該螢光膠體。 A method for fabricating a light emitting diode package structure, comprising: providing a substrate and a plurality of light emitting diode chips, and respectively crystallizing the light emitting diode chips on the substrate; and the substrate and the Forming a phosphor layer on the LED chip; and patterning the phosphor layer such that the phosphor layer is a plurality of phosphor colloids respectively located above the LED wafers, and each of the phosphor colloids has A plurality of light perforations are perforated, and each of the light perforations extends vertically through each of the phosphor colloids. 如請求項1所述之方法,其中該螢光層包含有一感光膠材,與螢光粉混合於該感光膠材中。 The method of claim 1, wherein the fluorescent layer comprises a photosensitive adhesive mixed with the fluorescent powder in the photosensitive adhesive. 如請求項1所述之方法,其中該螢光層係利用一旋轉塗佈製程所形成。 The method of claim 1, wherein the phosphor layer is formed using a spin coating process. 如請求項1所述之方法,其中圖案化該螢光層之步驟係利用一曝光暨顯影製程進行。 The method of claim 1, wherein the step of patterning the phosphor layer is performed using an exposure and development process. 如請求項1所述之方法,其中各該螢光膠體之該等光線穿孔所佔的面積係為各該螢光膠體的面積的5%至30%。 The method of claim 1, wherein the area of the light perforations of each of the phosphor colloids is 5% to 30% of the area of each of the phosphor colloids. 如請求項1所述之方法,其中該基板之一上表面包含複數個凹陷之固晶區,且該等發光二極體晶片係設置於該等固晶區內。 The method of claim 1, wherein an upper surface of the substrate comprises a plurality of recessed solid crystal regions, and the light emitting diode chips are disposed in the solid crystal regions. 如請求項1所述之方法,其中於形成該螢光層之前,另包含提供一平坦結構之步驟,該平坦結構覆蓋於該基板與該等發光二極體晶片表面。 The method of claim 1, wherein before the forming the phosphor layer, further comprising the step of providing a planar structure overlying the substrate and the surface of the light emitting diode wafer. 如請求項7所述之方法,其中該螢光層係形成於該平坦結構之表面上。 The method of claim 7, wherein the phosphor layer is formed on a surface of the planar structure. 如請求項1所述之方法,其中該等光線穿孔係均勻分布於各該螢光膠體中,且部分之該等光線穿孔暴露出該等發光二極體晶片。 The method of claim 1, wherein the light perforations are uniformly distributed in each of the phosphor colloids, and a portion of the light perforations expose the photodiode wafers. 一種製作發光二極體封裝結構之方法,其包含有:提供一基板與複數個發光二極體晶片,並將該等發光二極體晶片分別固晶於該基板上;進行至少一雷射列印製程,以形成至少一螢光薄膜,該螢光薄膜包含有螢光粉;以及把該螢光薄膜之螢光粉轉印至該等發光二極體晶片上而形成至少一螢光層。 A method for fabricating a light emitting diode package structure, comprising: providing a substrate and a plurality of light emitting diode chips, and respectively crystallizing the light emitting diode chips on the substrate; performing at least one laser column The printing process is to form at least one fluorescent film, the fluorescent film comprises a phosphor powder; and the phosphor powder of the fluorescent film is transferred onto the LED chips to form at least one phosphor layer. 如請求項10所述之方法,其中該轉印步驟係利用一熱壓製程把該等螢光粉轉印至該等發光二極體晶片上。 The method of claim 10, wherein the transferring step transfers the phosphors onto the light emitting diode wafers using a thermal press process. 如請求項10所述之方法,其中該雷射列印製程與該轉印步驟可反覆進行,以於該等發光二極體晶片上形成複數層螢光層。 The method of claim 10, wherein the laser printing process and the transferring step are repeated to form a plurality of layers of phosphor layers on the light emitting diode wafers.
TW101130139A 2008-10-13 2008-10-13 Light-emitting diode package structure manufacturing method TW201304115A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI505514B (en) * 2013-11-20 2015-10-21 Advanced Optoelectronic Tech Light emitting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI505514B (en) * 2013-11-20 2015-10-21 Advanced Optoelectronic Tech Light emitting diode

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