201251103 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種光電元件結構，且特別是有關於 一種發光二極體結構。 【先前技術】 由於發光二極體(light emitting diode, LED)結構具有 低功率消耗、環保、使用壽命長及反應速率快等優勢，因 此已被廣泛地應用在照明領域及顯示領域中。為了提升發 光二極體的亮度’大尺寸的晶粒逐漸被開發出來。然而， 習知的發光二極體結構的電極設計具有造成電流分散性不 佳的缺點’而使得此電極設計不適合用於大尺寸的晶粒。 為改善上述之電流分散性不佳的問題，另一種習知電 極被發展出來。此種習知電極包括配置於N型摻雜半導體 層上的第一指又狀電極以及配置於p型摻雜半導體層上的 第二指又狀電極。第一指叉狀電極與第二指叉狀電極分別 具有多個第一分支部與多個第二分支部，其中相鄰之二個 第一分支部中間僅配置有一個第二分支部。雖然此電極設 計可改善電流分散性不佳的問題，但在此電極設計下，由 於電子與電洞之遷移率(mobility)不同，電子的遷移率較電 洞的遷移率快，因此自第一分支部發出之電子傳遞至第二 分支部時（或第二分支部發出之電洞傳遞至第一分支部 時），第二分支部旁(或第一分支部旁)的電子濃度與電洞濃 度差異極大，而使電子與電洞復合(recombination)機率較 201251103 低，進而使得具有此種習知電極之發光二極體結構的發光 效率不佳。 【發明内容】 本發明提供一種發光二極體結構，其具有高發光效 本發明之一實施例提出—種發光二極體結構，包括第 :型摻雜半導體層、第二型摻雜半導體層、發光層、第一 ，極以及第二電極。發储配置於第一型摻雜半導體層與 -型換雜半導體層之間。第—電極配置於第—型換雜半 ，層上’且包括多個第—分支部。第二電極配置於第二 ^雜半導體層上，且包括多個第二分支部。相鄰之二第 一分支部之間配置有至少二第二分支部。 基於上述，本發明之實施例之發光二極體結構藉由在 ^電極的相鄰二第-分支部之間配置至少二第二電極的 声支# ’可使付發光二極體結構中上的電子與電洞濃 j為匹配，此可有效促進電子與電洞的復合，進而提高 I先二極體結構的發光效率。 ，下文特 為讓本發明之上述舰和伽能更明顯易懂 牛貫知例，並配合所附圖式作詳細說明如下。 實施方式】 構的上視示意 。圖3為對應201251103 VI. Description of the Invention: [Technical Field] The present invention relates to a photovoltaic element structure, and more particularly to a light-emitting diode structure. [Prior Art] Since the light emitting diode (LED) structure has advantages of low power consumption, environmental protection, long service life, and fast response rate, it has been widely used in the field of illumination and display. In order to increase the brightness of the light-emitting diodes, large-sized crystal grains have been gradually developed. However, the electrode design of the conventional light-emitting diode structure has a drawback of causing poor current dispersion, which makes this electrode design unsuitable for use in large-sized crystal grains. In order to improve the above problem of poor current dispersion, another conventional electrode has been developed. Such a conventional electrode includes a first finger-shaped electrode disposed on the N-type doped semiconductor layer and a second finger-shaped electrode disposed on the p-type doped semiconductor layer. The first interdigitated electrode and the second interdigitated electrode respectively have a plurality of first branch portions and a plurality of second branch portions, wherein only one second branch portion is disposed in the middle of the adjacent two first branch portions. Although this electrode design can improve the problem of poor current dispersion, in this electrode design, since the mobility of electrons and holes is different, the mobility of electrons is faster than the mobility of holes, so since the first When the electrons emitted from the branch portion are transmitted to the second branch portion (or when the hole from the second branch portion is transmitted to the first branch portion), the electron concentration and the hole near the second branch portion (or beside the first branch portion) The concentration difference is extremely large, and the electron and hole recombination probability is lower than 201251103, which makes the light-emitting diode structure having such a conventional electrode have poor luminous efficiency. SUMMARY OF THE INVENTION The present invention provides a light-emitting diode structure having high light-emitting efficiency. One embodiment of the present invention provides a light-emitting diode structure including a first-type doped semiconductor layer and a second-type doped semiconductor layer. , a light-emitting layer, a first electrode, and a second electrode. The storage is disposed between the first type doped semiconductor layer and the -type semiconductor layer. The first electrode is disposed on the first-type half, on the layer' and includes a plurality of first branches. The second electrode is disposed on the second semiconductor layer and includes a plurality of second branch portions. At least two second branch portions are disposed between the adjacent first branch portions. Based on the above, the light-emitting diode structure of the embodiment of the present invention can be disposed in the light-emitting diode structure by arranging at least two sound electrodes of the second electrode between adjacent two first-branch portions of the electrode. The electrons are matched with the hole thickness j, which can effectively promote the recombination of electrons and holes, thereby improving the luminous efficiency of the structure of the first diode. In the following, the above-mentioned ship and gamma can be more clearly understood and described in detail with reference to the drawings. Embodiments] The top view of the structure is shown. Figure 3 is the corresponding
圖1為本發明一實施例之發光二極體結 圖2為對應圖1之A-A’線所,纟會之剖面圖 4 201251103 圖1之B-B’線所繪之剖面圖。 請同時參照圖1、圖2及圖3，本實施例之發光二極 體結構100包括第一型掺雜半導體層1〇2、第二型摻雜半 導體層104、發光層106、第一電極1〇8以及第二電極11〇。 發光層106配置於第一型摻雜半導體層1〇2與第二型摻雜 半導體層104之間。第一電極1〇8配置於第一型摻雜半導 體層102上，而第二電極11〇配置於第二型掺雜半導體層 104上。在本實施例中，第一型掺雜半導體層1〇2例如為 N型半導體層，而第二型掺雜1〇4半導體層例如為p型半 導體層。發光層106例如為氮化鎵(gaUiumnitride, GaN)層 與氮化銦鎵(indium gallium nitride, InGaN)層交替堆疊的多 重量子井結構(Multiple Quantum WeU，MQW)。然而，在 其他實施例中，發光層106亦可以是量子井結構。第一電 極108與第二電極11〇之材質為導電材料，以單一層或是 多層導電材料堆疊，其包括金、鈦、鋁、鉻、鉑、其他導 電材料或這些材料的組合。但本發明不以上述為限。 更詳細地說，本實施例之第一型彳參雜半導體層1〇2具 有相連接之平台部102a與下陷部i〇2b，平台部102的厚 度D1大於下陷部l〇2b的厚度D2。發光層1〇6與第二型 掺雜半導體層104配置平台部102a上，且第一電極ι〇8 配置於下陷部l〇2b上。在一實施例中，發光二極體結構 100可利用覆晶(flip chip)的方式來封裝。如圖4所示，本 貫細*例可利用導電凸塊2〇〇接合(bonding)第一電極108與 電路板300及接合第二電極11〇與電路板3〇〇(J如此一來， 201251103 使用者便可透過電路板300操作本實施例之發光二極體結 構100。然而，在另一實施例中，發光二極體結構100亦 可採用打線結合的方式來封裝，亦即可利用接合導線來接 合第一電極108與電路板300及接合第二電極110與電路 板300，而此時第一電極108與第二電極11〇背對電路板 300。 此外，本實施例之發光二極體結構100可進一步包括 透明導電層112。透明導電層112可配置於第二電極110 與第二型摻雜半導體層104之間。第二型摻雜半導體層1〇4 可藉由透明導電層112與第二電極11〇形成良好之歐姆接 觸(ohmic contact)。透明導電層112的材質例如為銦錫氧化 物(indium tin oxide ’ ITO)、銦鋅氧化物(indium zinc oxide， IZO)、氧化鋅(zinc⑽此，ZnO)、銦錫鋅氧化物(indium tin zinc oxide，ITZO)、銘錫氧化物（aiuminurn tin oxide， ATO)、紹鋅氧化物(aluminmn zinc 〇xide, AZ〇)或其他適當 的透明導電材質。 本實施例之第一電極1〇8包括多個第一分支部108a， 而本實施例之第二電極110亦包括多個第二分支部110a。 5羊吕之’如圖1所示，本實施例之第一電極108包括二個 第一分支部l〇8a，而本實施例之第二電極11()包括二個 第一分支部ll〇a。（圖i中繪示二個第一分支部1〇8a及二 個第一分支部11〇a為代表’但本發明之發光二極體結構並 不=於圖1中所繪’圖5為本發明另一實施例之發光二極 體、、。構的上視示意圖，請參照圖5，此實施例之電極可由 6 201251103 圖1所示之第— 複排列而成。 電極108與第二電極11〇構成之單元口重 八支意的是，在本實施例中，相鄰之二個第一 iirt之間配置有至少二個第二分支部叫圖1中 二二μ I刀支部110a為代表，但本發明不限於此，在 ^也貫施例中’相鄰之二個第—分支部⑽a之間亦可配置 t 一個以上的第二分支部11⑽。在本實施例中，每-第-刀支。p 108a與相鄰第二分支部11〇a之間的最短距離H1 小=等於相鄰二第二分支部脑之間的最大距離H2， ，是每一該第一分支部與相鄰之該第二分支部之間的2倍 最短距離H1大於或等於相鄰之二該第二分支部之間的最 大距離H2，但本發明不限於此，距離hi與距離皆可 視實施的設計需求而調整。 上述之電極設計(相鄰之二個第一分支部1〇8a之間配 置有至少二個第二分支部110a)可改善習知技術中因電子 與電洞遷移率（mobility)不同而造成之發光效率不佳的問 題。詳細說明如下：由於電子的遷移率較電洞快，因此電 子在遠離第一分支部108a處仍可維持較高的濃度。所以， 當電子移動至多個相鄰的第二分支.部ll〇a之間的區域 時，電子的濃度與電洞的濃度會較為接近，如此便能夠使 電子與電洞有較佳的復合率，進而提升發光二極體結構 100的發光效率。 在本實施例中，由於每一第一分支部108a與相鄰第 二分支部110a之間的最短距離H1小於或等於相鄰二第二 201251103 分支部ll〇a之間的最大距離H2，或是每一該第一分支部 與相鄰之該第二分支部之間的2倍最短距離H1大於或等 於相鄰之二該第二分支部之間的最大距離H2,因此這些相 鄰的第二分支部110a之間的電子濃度便能夠有效提升，而 使的電子的濃度與電洞的濃度更為接近，進而藉由提升電 子與電洞的復合率來提升發光二極體結構1〇〇的發光效 率。 此外’就本實施例之發光二極體結構100的中間區域 C而言，中間區域C與第一分支部l〇8a的距離較遠，故由 第一分支部l〇8a發出的電子傳遞至中間區域c時，其(電 子)濃度已下降。另一方面，雖然中間區域C與第二分支部 110a的距離較近，但由於電洞之遷移率(m〇bility)較電子 小，故由第二分支部110a發出之電洞傳遞至中間區域c 時’其（電洞）濃度已下降至與電子濃度接近的程度。如此 一來，中間區域C中的電洞濃度剛好可與中間區域c中的 電子濃度匹配’進而使得電子電洞在中間區域C附近發生 復合(recombination)的機率大幅提高，而更進一步地提升發 光二極體結構100的發光效率’且亦能夠提升發光二極體 結構100的發光均勻性。 請繼續參照圖1、圖3及圖4，本實施例之第一電極 108可進一步包括至少一第一接墊108b，第一接塾i〇8b 連接第一分支部108a。本實施例之第二電極可進一步 包括至少一第二接墊ll〇b，第二接墊ll〇b連接第二分支 部110a。在本實施例中’第二接墊ii〇b配置於第一電極 8 201251103 108之相鄰的二第一分支部l〇8a之間。如圖4所示，第一 接墊108b與第二接墊ll〇b可透過導電凸塊200與電路板 300連接’進而讓使用者可透過電路板3〇〇操作發光二極 體結構100。 詳言之，本實施例之第一分支部l〇8a具有相對的第 一端T1與第二端T2 ’且第二分支部1 i〇a具有相對的第三 端T3與第四端T4。第一接墊i08b連接相鄰第一分支部 108b的第·一纟而T1 ’而第一接塾110b連接相鄰第二分支部 110a的第二私T3，且第一接藝1 l〇b配置於相鄰二第一分 支部108b的第四端T4之間。 在本實施例中 /刀文厲a 呈u字形，本實施例之第二電極110中之二第二分支u〇a 亦呈U字形。並且，第一電極iosiu字形的開口 i〇8c 朝向第二電極110的第二接墊11〇b，且第二電極11〇2υ 字形的開口 110c朝向第一電極1〇8的第一接墊1〇肋。 綜上所述，本發明之發光二極體結構藉由在第一電極 的相鄰二第-分支部之間配置至少二第二電極的第二分支 P :使4^光一極體結構各區域上的電子電洞濃度匹 :=效=子與電洞的復合，進而提高電子電洞 效率光提取效车效::明之發光二極體結構的發光 本發明隹:、、::日月已以實施例揭露如上’然其並非用以限定 本^⑽屬技術領域巾具有通常知識者，在不脫離 本"明之精神和範圍内，當可作些許之更咖π: 201251103 發明之保護範圍當視後附之t料鄉圍所界定者為準。 【圖式簡單說明】 圖1為本發明一實施例之發光二極體結構的上視示意 圖0 圖2為對應圖1之a-A’線所繪之剖面圖。 圖3為對應圖1之B-B’線所繪之剖面圖。 圖4示出本發明一實施例之發光二極體結構接合在電 路板上的情形。 圖5為本發明一實施例之發光二極體結構的上視示意 圖。 、 【主要元件符號說明】 100 :發光二極體結構 102 :第一型摻雜半導體層 102a :平台部 102b :下陷部 104 :第二型摻雜半導體層 106 :發光層 108 :第一電極 108a :第一分支部 108b :第一接墊 108c :第一電極之U字形的開口 110 :第二電極 201251103 110a :第二分支部 110b :第二接墊 110c:第二電極之U字形的開口 112 :透明導電層 200 :導電凸塊 300 :電路板1 is a light-emitting diode junction according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along line B-B' of FIG. 1 in accordance with the line A-A' of FIG. Referring to FIG. 1 , FIG. 2 and FIG. 3 , the LED structure 100 of the present embodiment includes a first type doped semiconductor layer 1 2 , a second type doped semiconductor layer 104 , a light emitting layer 106 , and a first electrode. 1〇8 and the second electrode 11〇. The light emitting layer 106 is disposed between the first type doped semiconductor layer 1〇2 and the second type doped semiconductor layer 104. The first electrode 1〇8 is disposed on the first type doped semiconductor layer 102, and the second electrode 11〇 is disposed on the second type doped semiconductor layer 104. In the present embodiment, the first type doped semiconductor layer 1 2 is, for example, an N type semiconductor layer, and the second type doped 1 〇 4 semiconductor layer is, for example, a p type semiconductor layer. The light-emitting layer 106 is, for example, a multi-quantum well structure (Multiple Quantum WeU, MQW) in which a gallium nitride (GaN) layer and an indium gallium nitride (InGaN) layer are alternately stacked. However, in other embodiments, the luminescent layer 106 can also be a quantum well structure. The first electrode 108 and the second electrode 11 are made of a conductive material and are stacked in a single layer or a plurality of layers of conductive material, including gold, titanium, aluminum, chromium, platinum, other conductive materials or a combination of these materials. However, the invention is not limited to the above. In more detail, the first type germanium-doped semiconductor layer 1〇2 of the present embodiment has the connected land portion 102a and the depressed portion i〇2b, and the thickness D1 of the land portion 102 is larger than the thickness D2 of the depressed portion l2b. The light-emitting layer 1〇6 and the second-type doped semiconductor layer 104 are disposed on the land portion 102a, and the first electrode ι8 is disposed on the depressed portion 102b. In one embodiment, the light emitting diode structure 100 can be packaged by means of a flip chip. As shown in FIG. 4, the present embodiment can bond the first electrode 108 and the circuit board 300 and the second electrode 11 and the circuit board 3 by using the conductive bumps 2 (J). The LED module 100 of the present embodiment can be operated by the circuit board 300. However, in another embodiment, the LED structure 100 can be packaged by wire bonding or can be utilized. The bonding wires are used to bond the first electrode 108 and the circuit board 300 and the second electrode 110 and the circuit board 300, and the first electrode 108 and the second electrode 11 are opposite to the circuit board 300. In addition, the light emitting device of the embodiment The polar body structure 100 may further include a transparent conductive layer 112. The transparent conductive layer 112 may be disposed between the second electrode 110 and the second type doped semiconductor layer 104. The second type doped semiconductor layer 1〇4 may be transparently conductive The layer 112 forms a good ohmic contact with the second electrode 11. The material of the transparent conductive layer 112 is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), Zinc oxide (zinc(10), ZnO), indium Indium tin zinc oxide (ITZO), aiuminurn tin oxide (ATO), aluminium zinc 〇xide (AZ〇) or other suitable transparent conductive material. An electrode 1〇8 includes a plurality of first branch portions 108a, and the second electrode 110 of the embodiment also includes a plurality of second branch portions 110a. 5Yan Luzhi' is shown in FIG. The electrode 108 includes two first branch portions 10a, and the second electrode 11() of the present embodiment includes two first branch portions 11a. (The two first branch portions 1〇8a are illustrated in FIG. And the two first branch portions 11〇a are represented as 'but the light-emitting diode structure of the present invention is not as shown in FIG. 1'. FIG. 5 is a light-emitting diode according to another embodiment of the present invention. Referring to FIG. 5, the electrode of this embodiment can be arranged by the first-rear arrangement shown in FIG. 1 of 201251103. The unit of the electrode 108 and the second electrode 11〇 is eight-folded. In this embodiment, at least two second branch portions are disposed between two adjacent first iirts, such as two or two μ I knives in FIG. 1 . 110a is a representative, but the present invention is not limited thereto, and one or more second branch portions 11 (10) may be disposed between the adjacent two first branch portions (10)a. In this embodiment, The shortest distance H1 between each - the first-knife branch p 108a and the adjacent second branch portion 11A is equal to the maximum distance H2 between the brains of the adjacent two second branch portions, which is each of the first The 2 times shortest distance H1 between the branch portion and the adjacent second branch portion is greater than or equal to the maximum distance H2 between the adjacent two second branch portions, but the present invention is not limited thereto, and the distance hi and the distance are both Adjustable to the design needs of the implementation. The above electrode design (at least two second branch portions 110a are disposed between the adjacent two first branch portions 1A and 8a) can improve the difference in electron and hole mobility in the prior art. The problem of poor luminous efficiency. The details are as follows: Since the mobility of electrons is faster than that of the hole, the electrons can maintain a high concentration away from the first branch portion 108a. Therefore, when electrons move to a region between a plurality of adjacent second branch portions, the concentration of electrons and the concentration of the holes are relatively close, so that the electrons and the holes have a better recombination rate. Thereby, the luminous efficiency of the light emitting diode structure 100 is improved. In this embodiment, since the shortest distance H1 between each first branch portion 108a and the adjacent second branch portion 110a is less than or equal to the maximum distance H2 between the adjacent two second 201251103 branch portions 11a, or The second shortest distance H1 between each of the first branch portions and the adjacent second branch portions is greater than or equal to a maximum distance H2 between the adjacent two second branch portions, and thus the adjacent The electron concentration between the two branch portions 110a can be effectively increased, and the concentration of electrons is made closer to the concentration of the holes, thereby improving the structure of the light-emitting diode by increasing the recombination rate of electrons and holes. Luminous efficiency. Further, with respect to the intermediate portion C of the light-emitting diode structure 100 of the present embodiment, the distance between the intermediate portion C and the first branch portion 10a is far, so that electrons emitted from the first branch portion 108a are transmitted to In the middle region c, its (electron) concentration has decreased. On the other hand, although the distance between the intermediate portion C and the second branch portion 110a is relatively short, since the mobility (m〇bility) of the hole is smaller than that of the electron, the hole emitted by the second branch portion 110a is transmitted to the intermediate portion. When c, its (hole) concentration has dropped to a level close to the electron concentration. In this way, the concentration of the holes in the intermediate region C can be matched with the concentration of electrons in the intermediate region c, which further increases the probability of recombination of the electron holes in the vicinity of the intermediate region C, and further enhances the illumination. The luminous efficiency of the diode structure 100 can also improve the uniformity of illumination of the LED structure 100. Referring to FIG. 1, FIG. 3 and FIG. 4, the first electrode 108 of the embodiment may further include at least one first pad 108b, and the first port 〇8b is connected to the first branch portion 108a. The second electrode of this embodiment may further include at least one second pad 11b, and the second pad 11b is connected to the second branch 110a. In the present embodiment, the second pads ii 〇 b are disposed between the adjacent two first branch portions 10a of the first electrodes 8 201251103 108. As shown in FIG. 4, the first pad 108b and the second pad 11b can be connected to the circuit board 300 through the conductive bump 200, thereby allowing the user to operate the LED structure 100 through the circuit board 3. In detail, the first branch portion 10a of the present embodiment has the opposite first end T1 and the second end T2' and the second branch portion 1 i〇a has the opposite third end T3 and fourth end T4. The first pad i08b connects the first one of the adjacent first branch portions 108b and T1', and the first port 110b connects the second private T3 of the adjacent second branch portion 110a, and the first connector 1 l〇b It is disposed between the fourth ends T4 of the adjacent two first branch portions 108b. In the present embodiment, the second branch u〇a of the second electrode 110 of the present embodiment is also U-shaped. Further, the opening i〇8c of the first electrode iosiu is oriented toward the second pad 11〇b of the second electrode 110, and the opening 110c of the second electrode 11〇2 is facing the first pad 1 of the first electrode 1〇8 Ribbed. In summary, the LED structure of the present invention has a second branch P of at least two second electrodes disposed between adjacent two first-branch portions of the first electrode: a region of the photo-polar body structure The electron hole concentration on the surface is: = effect = the combination of the sub-hole and the hole, thereby improving the efficiency of the electron hole. The light-efficiency effect is improved: the luminous structure of the light-emitting diode structure of the present invention: 、, :::日月The disclosure of the above is not to limit the technical knowledge of the technical field of the present invention. Without departing from the spirit and scope of the present invention, it is possible to make some more π: 201251103 It shall be subject to the definition of the t-township enclosed by the attached. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top plan view of a structure of a light emitting diode according to an embodiment of the present invention. Fig. 2 is a cross-sectional view taken along line a-A' of Fig. 1. Figure 3 is a cross-sectional view taken along line B-B' of Figure 1. Fig. 4 is a view showing a state in which a light emitting diode structure is bonded to a circuit board according to an embodiment of the present invention. Fig. 5 is a top plan view showing the structure of a light-emitting diode according to an embodiment of the present invention. [Major component symbol description] 100: Light-emitting diode structure 102: First-type doped semiconductor layer 102a: Platform portion 102b: Sink portion 104: Second-type doped semiconductor layer 106: Light-emitting layer 108: First electrode 108a The first branch portion 108b: the first pad 108c: the U-shaped opening 110 of the first electrode: the second electrode 201251103 110a: the second branch portion 110b: the second pad 110c: the U-shaped opening 112 of the second electrode : Transparent Conductive Layer 200 : Conductive Bump 300 : Circuit Board
Dl、D2 :厚度 m、H2:距離 ΤΙ、T2、T3、T4 :端點 11Dl, D2: thickness m, H2: distance ΤΙ, T2, T3, T4: endpoint 11